TWI575636B - - Google Patents

Info

Publication number
TWI575636B
TWI575636B TW103142797A TW103142797A TWI575636B TW I575636 B TWI575636 B TW I575636B TW 103142797 A TW103142797 A TW 103142797A TW 103142797 A TW103142797 A TW 103142797A TW I575636 B TWI575636 B TW I575636B
Authority
TW
Taiwan
Application number
TW103142797A
Other versions
TW201541536A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201541536A publication Critical patent/TW201541536A/zh
Application granted granted Critical
Publication of TWI575636B publication Critical patent/TWI575636B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW103142797A 2013-12-30 2014-12-09 一種等離子體處理裝置及其靜電卡盤 TW201541536A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310745011.8A CN104752136B (zh) 2013-12-30 2013-12-30 一种等离子体处理装置及其静电卡盘

Publications (2)

Publication Number Publication Date
TW201541536A TW201541536A (zh) 2015-11-01
TWI575636B true TWI575636B (zh) 2017-03-21

Family

ID=53591661

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103142797A TW201541536A (zh) 2013-12-30 2014-12-09 一種等離子體處理裝置及其靜電卡盤

Country Status (2)

Country Link
CN (1) CN104752136B (zh)
TW (1) TW201541536A (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106898574A (zh) * 2015-12-17 2017-06-27 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘机构以及半导体加工设备
CN108054087B (zh) * 2017-12-07 2020-05-29 德淮半导体有限公司 晶圆键合中的退火装置及退火方法
CN109285923A (zh) * 2018-10-22 2019-01-29 天马微电子股份有限公司 微型器件转印模具和微型器件转印方法
CN111383882B (zh) * 2018-12-27 2023-03-10 中微半导体设备(上海)股份有限公司 等离子体处理装置及用于该处理装置的基片支座
CN111383885B (zh) * 2018-12-27 2023-03-31 中微半导体设备(上海)股份有限公司 一种能提高控温精度的基片安装台及等离子体处理设备
CN114496692B (zh) * 2020-11-11 2024-03-12 中微半导体设备(上海)股份有限公司 加热组件、基片承载组件及其等离子体处理装置
CN113110644B (zh) * 2021-04-26 2022-09-16 北京北方华创微电子装备有限公司 静电卡盘的温度控制方法和温度控制系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101278368A (zh) * 2005-09-30 2008-10-01 朗姆研究公司 具有变化厚度、轮廓和/或形状的介电材料和/或空腔的静电卡盘组件、其使用方法及结合有其的装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316298A (ja) * 1995-05-11 1996-11-29 Souzou Kagaku:Kk 静電チャック
KR20090071060A (ko) * 2007-12-27 2009-07-01 주성엔지니어링(주) 정전척 및 그를 포함하는 기판처리장치
KR20100046909A (ko) * 2008-10-28 2010-05-07 주성엔지니어링(주) 정전 흡착 장치와 그의 제조방법
KR101074458B1 (ko) * 2009-06-11 2011-10-18 세메스 주식회사 기판 가열 유닛 및 이를 포함하는 기판 처리 장치
CN202332816U (zh) * 2011-11-23 2012-07-11 中微半导体设备(上海)有限公司 一种以不同材料形成分区的静电吸盘

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101278368A (zh) * 2005-09-30 2008-10-01 朗姆研究公司 具有变化厚度、轮廓和/或形状的介电材料和/或空腔的静电卡盘组件、其使用方法及结合有其的装置

Also Published As

Publication number Publication date
TW201541536A (zh) 2015-11-01
CN104752136A (zh) 2015-07-01
CN104752136B (zh) 2017-06-27

Similar Documents

Publication Publication Date Title
BR112016014626A2 (zh)
AP2016009275A0 (zh)
BR102016010778A2 (zh)
BR112015007533A2 (zh)
BR112014017733A2 (zh)
BR112014017739A2 (zh)
BR112014019326A2 (zh)
BR112014017855A2 (zh)
BR112014020341A2 (zh)
BR112014017765A2 (zh)
BR112014017669A2 (zh)
BR112014021878A2 (zh)
BR112014017901A2 (zh)
BR112016003675A2 (zh)
BR112014019204A2 (zh)
BR112016000412A2 (zh)
BR112014017722A2 (zh)
BR112015015948A2 (zh)
BR112014017794A2 (zh)
BR112014017653A2 (zh)
BR112016008143A2 (zh)
BR112014017601A2 (zh)
BR112015015312A2 (zh)
TWI575636B (zh)
BR112014017745A2 (zh)