TWI573488B - A far infrared ray generator - Google Patents

Description

Far infrared ray generating device

The invention relates to a radiation generating device for converting energy into far infrared rays, in particular to a far infrared ray generating device which is flexible and thinned and reduced in volume.

Generally speaking, infrared light is a non-visible light whose wavelength is longer than red light, and its wavelength is between 700 nm and 14,000 mm. Among them, the wavelength is between 700 and 5000 nm, which is near-infrared, and the wavelength of 8,000 to 14,000 nm is far infrared. Actual clinical experiments have confirmed that far-infrared rays are low-energy rays that can penetrate deep into human subcutaneous tissues by radiation, and far-infrared rays are close to the vibrational frequency of cellular molecules in the human body. Therefore, far-infrared rays easily resonate with human tissues, when human tissues Absorbing the resonance energy of far-infrared rays will promote microvascular expansion, smoother blood circulation, and enhance metabolism.

The traditional far-infrared substrate product uses a coil-plating vacuum electron beam evaporation device to melt a far-infrared ceramic powder with a high-energy electron beam, evaporating the ceramic powder to form a vapor, and depositing it on the surface of the substrate to form a thin layer. . However, the disadvantage of such a product is that the adhesion between the plating layer and the substrate is poor, and peeling is likely to occur.

SUMMARY OF THE INVENTION A primary object of the present invention is to provide a far-infrared ray generating device capable of flaking, which is capable of reducing the volume of the far-infrared ray generating device and flexing and bending, thereby allowing the user to conveniently attach the far-infrared ray generating device directly to the skin.

The secondary object of the present invention is that the far-infrared generating device is fixed by the slitting method, which can prevent the peeling phenomenon which is easily generated by the sticking method, and can avoid the damage of the graphite layer caused by the high temperature.

In order to achieve the above objective, the far infrared ray generating device of the present invention comprises: a plastic layer, a graphite layer, a positive electrode, a negative electrode, and a plurality of sutures, wherein the graphite layer is disposed on one surface of the plastic layer for Converting an external energy to generate far infrared rays, having a first end located at an edge position and a second end located at an opposite side edge of the first end; and the positive electrode and the negative electrode are respectively disposed at the first end of the graphite layer And the second end; a part of the suture of the plurality of sutures is stitched and fixed together with the plastic layer, the graphite layer and the positive electrode, and the remaining part of the plurality of sutures further comprises the plastic layer and the graphite layer and The negative electrodes are fixed together by sewing.

The plastic layer, the graphite layer, the positive electrode and the negative electrode are passed through the plurality of sutures to form a plurality of through holes, and the plurality of through holes are further filled with a viscose material, and the adhesive material can cover the through hole An adhesive layer for fixing the plurality of stitches is formed; the graphite layer is further set to a graphene, and an embossed pattern can be formed.

The far infrared ray generating device can further include one or more of a cladding layer, a shielding layer and at least one flexible conductive layer. In a preferred embodiment, the coating layer is sewn and fixed by the stitching. a surface of the graphite layer, wherein the graphite layer is located between the plastic layer and the cladding layer; the shielding layer is fixed to the side of the cladding layer by the slit, and is located opposite to the graphite layer, and is not transparent Light material composition.

In another preferred embodiment, the coating layer is sewn and fixed to the surface of the plastic layer by the suture, so that the plastic layer is located between the graphite layer and the cladding layer; and the shielding layer is stitched by the seam. It is fixed on one side of the graphite layer and opposite to the plastic layer, and is composed of an opaque material.

Further, the flexible conductive layer is fixed by the slit and is electrically connected to at least one of the positive electrode or the negative electrode, so that the line contact formed by the positive electrode and the negative electrode is located at the above The same side position of the plastic layer.

In addition, an insulating layer is disposed between the one of the positive electrode or the negative electrode and the flexible conductive layer to prevent the electrode material from contacting the conductive material, and the flexible conductive layer is formed by a planar region and a reverse The wiring area is formed by folding the above-mentioned planar area.

The invention is characterized in that the positive and negative electrodes are fixed to the plastic layer and the graphite layer by using sutures, thereby stably combining the far infrared ray generating device and achieving flaking, effectively reducing the volume and flexing and bending, when positive and negative When the electrode is energized to receive electric energy, the graphite layer converts the electric energy into far-infrared rays and is emitted outward, so that the user can use the far-infrared generating device at a position close to the skin surface to enhance the irradiation effect of the far-infrared rays.

In order to further clarify and understand the structure, the use and the features of the present invention, the preferred embodiment is described in detail with reference to the following drawings:

Referring to the first preferred embodiment shown in FIG. 1 to FIG. 3 , the far infrared ray generating device of the present invention comprises: a plastic layer 10 , a graphite layer 20 , a positive electrode 30 , a negative electrode 40 , a cladding layer 50 , A masking layer 60, two flexible conductive layers 70, 71 and a plurality of stitches 80.

The graphite layer 20 is disposed on one surface of the plastic layer 10 for converting an external energy to generate far-infrared scattering, having a first end 21 at an edge position and an opposite side edge of the first end 21 The second end 22. In a possible embodiment, the graphite layer 20 is a graphene, and the graphite layer 20 can be pressed against an external force to form an embossed pattern 23.

The positive electrode 30 is disposed on the first end 21 of the graphite layer 20, and is disposed on opposite sides of the graphite layer 20 from the plastic layer 10, and the negative electrode 40 is disposed on the second end 22 of the graphite layer 20. Similarly, the plastic layer 10 is located on opposite sides of the graphite layer 20, respectively.

The coating layer 50 is disposed on the surface of the graphite layer 20, and is disposed on opposite sides of the graphite layer 20 from the plastic layer 10, so that the graphite layer 20 is located between the plastic layer 10 and the cladding layer 50, thereby avoiding the above The graphite layer 20 is scratched by touch or friction; in addition, the cladding layer 50 and the plastic layer 10 are composed of a light transmissive material.

The shielding layer 60 is disposed on the side of the plastic layer 10, and is disposed on opposite sides of the plastic layer 10 from the graphite layer 20, and is formed of an opaque material for changing the scattering direction of the far infrared rays.

As shown, one of the flexible conductive layers 70 is electrically connected to the positive electrode 30, and after bending, a positive line contact 72 is formed on the surface of the shielding layer 60, and another flexible conductive layer 71 is formed. Electrically connected to the negative electrode 40 and formed with a negative line contact 73.

The flexible conductive layer 70 includes a planar region 74 and a wiring region 75 that reflexes and protrudes from the planar region 74. The wiring region 75 extends outwardly to form a positive electrode contact 72. The positive line contact 72 of the electrode 30 and the negative line contact 73 of the negative electrode 40 are located at the same side position of the plastic layer 10.

The present invention is characterized in that the plastic layer 10, the graphite layer 20, the positive electrode 30, the cladding layer 50, the shielding layer 60, and the flexible conductive layer 70 are sewn together by a part of the plurality of sutures 80, and the above plural The remaining portion of the suture 80 is additionally sewn and fixed together with the plastic layer 10, the graphite layer 20, the negative electrode 40, the cladding layer 50, the shielding layer 60, and the flexible conductive layer 71.

In this way, the peeling phenomenon which is easily generated by the adhesive method can be prevented, and the graphite layer 20 can be prevented from being damaged by the high temperature by the welding method, and the volume of the far infrared ray generating device can be reduced and flexed and bent.

Referring to FIG. 4, the plastic layer 10, the graphite layer 20, the positive electrode 30, the negative electrode 40, the cladding layer 50, the shielding layer 60, and the two flexible conductive layers 70, 71 are passed through the plurality of stitches 80. The plurality of through holes 11, 24, 31, 41, 51, 61, 76 are formed. In a preferred embodiment, the plurality of through holes 11, 24, 31, 41, 51, 61, 76 are further filled with a glue. The material 90 is such that the layers are bonded by the above-mentioned adhesive material 90 in addition to the tensile force of the suture 80, thereby increasing the bonding strength of the far infrared ray generating device.

In addition, the adhesive material 90 can cover the outer surface of the through hole 76 to form an adhesive layer 91 for fixing the plurality of stitches 80, thereby reinforcing and fixing a single side of the plurality of stitches 80. However, this is only used for convenience of illustration, that is, the adhesive material 90 may also form an adhesive layer 91 on the outside of the through hole 51, so that the opposite sides of the plurality of stitches 80 can be reinforced.

In addition, in order to avoid a short circuit between the two flexible conductive layers 70 and 71, an insulating layer 92 is disposed between the two flexible conductive layers 70 and 71 to prevent the two conductive materials from contacting each other.

Referring to the second preferred embodiment shown in FIG. 5, the far infrared ray device of the present invention also includes: a plastic layer 10, a graphite layer 20, a positive electrode 30, a negative electrode 40, a cladding layer 50, and a shielding layer. 60. A flexible conductive layer 70 and a plurality of stitches 80.

The difference between the first preferred embodiment described above is that the cladding layer 50 is disposed on the side of the plastic layer 10 and is opposite to the graphite layer 20 such that the plastic layer 10 is interposed between the graphite layer 20 and the cladding layer. The shielding layer 60 is disposed on one side of the positive electrode 30 and the negative electrode 40 and is opposite to the graphite layer 20 such that the positive electrode 30 and the negative electrode 40 are interposed between the graphite layer. 20 is between the shielding layer 60.

In addition, the negative electrode 40 is directly formed with a negative electrode contact 42 protruding from the graphite layer 20, and the positive electrode 30 is electrically connected to the flexible conductive layer 70, and is bent by the flexible conductive layer 70. After the other surface of the shielding layer 60 is formed, a positive line contact 72 is formed in the direction of the negative line contact 42.

The connection relationship and structural state of the other plastic layer 10, the graphite layer 20, the positive electrode 30, the negative electrode 40, the cladding layer 50, the shielding layer 60, the plurality of sutures 80, and the filled adhesive material 90 are the same as those described above. The preferred embodiment is the same and will not be further described herein.

The above-mentioned embodiments are merely intended to be illustrative of the present invention and are not intended to limit the scope of the invention, and the various modifications and modifications made by those skilled in the art in accordance with the scope of the invention and the description of the invention are still It is included in the scope of the following patent application.

10‧‧‧ plastic layer

11‧‧‧through hole

20‧‧‧ graphite layer

21‧‧‧ first end

22‧‧‧ second end

23‧‧‧ Imprinted pattern

24‧‧‧through hole

30‧‧‧ positive electrode

31‧‧‧through hole

40‧‧‧negative electrode

41‧‧‧through hole

42‧‧‧Negative line contact

50‧‧‧Cladding

51‧‧‧through hole

60‧‧‧shading layer

61‧‧‧through hole

70‧‧‧Flexible Conductive Layer

71‧‧‧Flexible conductive layer

72‧‧‧ positive line contact

73‧‧‧Negative line contact

74‧‧‧planar area

75‧‧‧Wiring area

76‧‧‧through hole

80‧‧‧ stitching

90‧‧‧Viscose

91‧‧‧Adhesive layer

92‧‧‧Insulation

1 is a perspective view of a first embodiment of the far infrared ray generating device of the present invention; FIG. 2 is a perspective view of the far infrared ray generating device of FIG. 1 in another direction; FIG. 3 is a cross-sectional view of the far infrared ray generating device of the present invention; Fig. 3 is an enlarged view of a portion of the far infrared ray generating device A; Fig. 5 is a cross-sectional view showing a second preferred embodiment of the far infrared ray generating device of the present invention.

10‧‧‧ plastic layer

20‧‧‧ graphite layer

21‧‧‧ first end

22‧‧‧ second end

23‧‧‧ Imprinted pattern

24‧‧‧through hole

30‧‧‧ positive electrode

40‧‧‧negative electrode

41‧‧‧through hole

50‧‧‧Cladding

60‧‧‧shading layer

70‧‧‧Flexible Conductive Layer

71‧‧‧Flexible conductive layer

72‧‧‧ positive line contact

74‧‧‧planar area

75‧‧‧Wiring area

80‧‧‧ stitching

90‧‧‧Viscose

91‧‧‧Adhesive layer

92‧‧‧Insulation

Claims (11)

A far infrared ray generating device comprising: a plastic layer; a graphite layer disposed on one surface of the plastic layer for converting an external energy to generate far infrared rays, having a first end and a second end on the opposite side a positive electrode disposed at the first end of the graphite layer; a negative electrode disposed at the second end of the graphite layer; a plurality of stitches, a portion of the stitching common to the plastic layer, the graphite layer and the positive electrode The slit is fixed, and the remaining part of the suture is used to sew and fix the plastic layer, the graphite layer and the negative electrode together; a flexible conductive layer fixed by the suture is electrically connected to the positive electrode or the negative electrode. At least one of the circuit contacts formed by the positive electrode and the negative electrode is located at the same side position of the plastic layer. The far infrared ray generating device according to claim 1, wherein the plastic layer, the graphite layer, the positive electrode and the negative electrode are passed through the plurality of sutures to generate a plurality of through holes, and the plurality of through holes are further filled There is a sticky material. The far infrared ray generating device according to claim 2, wherein the adhesive material covers an outer surface of the through hole to form an adhesive layer for fixing the plurality of stitches. The far infrared ray generating device according to claim 1, wherein the far infrared ray generating device further comprises a coating layer fixed by the stitching, which is disposed on a surface of the graphite layer, so that the graphite layer is located in the plastic Between the layer and the cladding. The far infrared ray generating device according to claim 4, wherein the far infrared ray generating device further comprises a shielding layer fixed by the suture stitching, disposed on a side of the cladding layer, and located at the graphite layer The opposite position consists of an opaque material. The far infrared ray generating device according to claim 1, wherein the far infrared ray generating device further comprises a shielding layer fixed by the suture stitching, disposed on a surface of the graphite layer, wherein the graphite layer is located in the plastic layer Between the shielding layer. The far-infrared ray generating device according to claim 6, wherein the far-infrared ray generating device further comprises a coating layer fixed by the suture stitching, disposed on a side of the plastic layer, and located at the graphite layer Opposite position. The far infrared ray generating device according to claim 1, wherein an insulating layer that prevents the electrode material from contacting the conductive material is disposed between the one of the positive electrode or the negative electrode and the flexible conductive layer. The far infrared ray generating device according to claim 1, wherein the flexible conductive layer is composed of a planar region and a wiring region that reflexes and protrudes the planar region. The far infrared ray generating device according to claim 1, wherein the graphite layer has an embossed pattern. The far infrared ray generating device according to claim 1, wherein the graphite layer is one of graphene or carbon fiber.