TWI573388B - 具有後置失真線性器之射頻功率放大器 - Google Patents
具有後置失真線性器之射頻功率放大器 Download PDFInfo
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- TWI573388B TWI573388B TW104129728A TW104129728A TWI573388B TW I573388 B TWI573388 B TW I573388B TW 104129728 A TW104129728 A TW 104129728A TW 104129728 A TW104129728 A TW 104129728A TW I573388 B TWI573388 B TW I573388B
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/432—Two or more amplifiers of different type are coupled in parallel at the input or output, e.g. a class D and a linear amplifier, a class B and a class A amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
- H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
- H03F2201/3215—To increase the output power or efficiency
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Description
本發明係有關於放大電路,特別有關於一種射頻功率放大電路。
手機已是現代人不可或缺的無線通訊裝置,而智慧型手機的普及化更進一步推展了各種無線周邊裝置的應用,諸如藉由Wi-Fi、BLUETOOTH及MIRACAST等各種無線通訊標準所衍生的各種周邊裝置。而隨著無線裝置的廣泛應用,在無線裝置中所必備的射頻功率放大器亦必需與時俱進,始能滿足其所需。
由於射頻功率放大器常須設置於如手機、平板電腦及無線耳機等行動裝置中,故必需考慮功率、線性度、增益、效率、成本、體積及重量等諸多因素,以達到最佳化之目標。然而現有射頻功率放大器皆難以兼顧所有上述因素之均衡表現,諸如美國專利7821337號、美國專利公開2011/0050345號及2007/0222512等,故一種具備高效率、高性能及簡化結構之射頻功率放大器實乃業界之一大課題。
本發明之主要目的,係在於提供一種具有後置失真線性器之射頻功率放大器,其利用簡易之電路架構即可達到極高之線性度特性及功
率增進效率(power added efficiency,PAE)。
本發明之次要目的,係在於提供一種具有後置失真線性器之射頻功率放大器,其可完全積體化於單一晶片上,以達輕量化、縮小體積及降低成本之效果。
為達到上述目的,本發明之具有後置失真線性器之射頻功率放大器係包括:一主要放大器,操作於A或AB類放大模式,具有一第一輸入端及一第一輸出端;一輔助放大器,操作於B或C類放大模式,具有一第二輸入端及一第二輸出端,其中該第二輸出端係連接於該第一輸出端以形成一訊號輸出端;及一相位補償器,具有一第三輸入端及一第三輸出端,其中該第三輸出端連接於該第二輸入端,第三輸入端則連接於第一輸入端以形成訊號輸入端,用以補償存在於該主要放大器與該輔助放大器間之相位差,以使第一輸出端與第二輸出端之輸出為相位相反。
(A1)‧‧‧主要放大器
(A2)‧‧‧輔助放大器
(TL)‧‧‧相位補償器
(11)‧‧‧第一輸入端
(12)‧‧‧第一輸出端
(21)‧‧‧第二輸入端
(22)‧‧‧第二輸出端
(Sin)‧‧‧訊號輸入端
(Sout)‧‧‧訊號輸出端
(31)‧‧‧第三輸入端
(4)‧‧‧後置失真線性器
第一圖係本發明之電路架構圖。
第二圖係本發明之電路特性圖。
第三圖係本發明之一較佳實施例之電路圖。
茲就本發明之結構之特徵,配合圖式,詳細說明如後,俾使更加明瞭。
首請參閱第一圖,本發明提供一種具有後置失真線性器之射頻功率放大器,主要係包括一主要放大器(A1)、一輔助放大器(A2)及一相位補償器(TL),藉由選擇該二放大器(A1,A2)的電晶體尺寸比和直流偏壓點,
以及利用相位補償器(TL)調整輸出相位的方式,以提升功率放大器的輸出功率與線性度。輔助放大器(A2)相當於一種負載調制,補償主要放大器(A1)之輸出特性而改進1-dB壓縮點功率(OP1dB)。當開啟後置失真線性器(4)時,使得主要放大器(A1)的三階失真可在輸出端被消除,使得輸出1-dB壓縮點(OP1dB)功率接近於飽和輸出功率,在OP1dB的功率區域中可以提高線性輸出功率和功率增進效率(PAE)操作區域。
主要放大器(A1)係操作於A或AB類放大模式,具有一第一輸入端(11)及一第一輸出端(12),用以提供高增益和輸出功率,且具有良好的PAE。
輔助放大器(A2)係操作於B或C類放大模式,具有一第二輸入端(21)及一第二輸出端(22),其中該第二輸出端(22)係連接於該第一輸出端(12)以形成一訊號輸出端(Sout)。
相位補償器(TL)具有一第三輸入端(31)及一第三輸出端(32),其中該第三輸出端(32)連接於該第二輸入端(21),第三輸入端(31)則連接於第一輸入端(11)以形成訊號輸入端(Sin),用以補償存在於該主要放大器(A1)與該輔助放大器(A2)間之相位差,以使第一輸出端(12)與第二輸出端(22)之輸出為相位相反。輔助放大器(A2)與相位補償器(TL)即組成一後置失真線性器(4)。
輔助放大器(A2)在鄰近OP1dB的範圍內,適當地補償三階失真係數,以達到線性化特性。當輔助放大器(A2)關閉時,功率增益主要來自於主要放大器(A1),即如圖2B所示。功率增益根據冪級數分析與模擬非線性信號。基頻增益可由下式(1)表示。
Gain=【S】_out/【S】_in=(a_1 A+(【3a】_3 A^3)/4)cos"ωt"/Acos"ωt"=a_1+(3a_3 A^2)/4 (1)
請參閱第二圖(A)、(B)、(C),其係為主要與輔助放大器(A1,A2)之增益(Gain)、輸出功率(Output Power)與功率增進效率(power added efficiency,PAE)對輸入電壓振幅(input voltage magnitude,A)之關係圖,如第二B圖所示,功率增益在高輸入電壓時,會因為產生非線性之三階項失真而減少。當輔助放大器(A2)被導通時,Sin信號將同時導入到主要與輔助放大器(A1,A2),位於輔助放大器(A2)前之相位補償器(TL),主要是用以調整輔助放大器(A2)之輸出相位,使輔助放大器(A2)獲得與主要放大器(A1)反相之三階失真係數(3 a 3A2/4),透過調整主要及輔助放大器(A1,A2)的直流偏壓點和電晶體尺寸比,使得主要和輔助放大器(A1,A2)之三階失真係數產生大小相同與相位相反的特性。因主要和輔助放大器(A1,A2)之輸出端(12,22)係連接在一起,藉由輔助放大器(A2)提供反向的三階失真係數,並相互抵消。將公式(1)可由公式(2)來表示:Gain=(a_(1,A1)+(【3a】_(3,A1)A^2)/4)+(a_(1,A2)+(【3a】_(3,A2)A^2)/4)=a_(1,A1)+a_(1,A2) (2)
其中a1,A1和a1,A2分別代表主要和輔助放大器(A1,A2)的基頻係數,而a3,A1和a3,A2則分別代表對應的主要和輔助放大器(A1,A2)之三階失真係數。
於本發明之設計方式下,在輸出節點的OP1dB附近可將三階失真消除,達到近似於只有A1係數之效果,進而成為線性增益。因輔助放大器(A2)被設計在B類或C類,其功率增益是衰減的,藉由主要和輔助放大
器(A1,A2)的尺寸比,使得a1,A1遠大於a1,A2,公式(2)即可簡化如下:Gain≒a1,A1
輔助放大器(A2)可補償鄰近於OP1dB功率之三階失真係數,但是在低輸入功率區間會降低些許功率增益。本發明之功率放大器實現高線性度特性,在OP1dB的功率區域中可提高線性輸出功率和PAE操作區域。
本發明可為一級功率放大器或串接組成多級功率放大器,第三圖所示者為一級放大之後置失真線性化功率放大器之具體實施例,操作頻率為5GHz。其實測結果為:當後置失真線性器(4)未啟動時,此放大器線性功率輸出為17.7dBm,與飽和輸出功率差距為2.3dB,此時效率為29.7%。當後置失真線性器(4)啟動時,放大器線性功率輸出為20dBm,與飽和輸出功率僅差距為0.2dB,效率也提升2.9%。此結果表示後置失真線性器(4)可有效增加功率放大器線性操作動態範圍。
以上所述者,乃為本發明之一較佳實施例之具體說明,非用以侷限本發明之專利範圍,其他應用本發明之創作精神所為之一切等效變換,均應俱屬本發明之專利範圍內。
Claims (5)
- 一種具有後置失真線性器之射頻功率放大器,係包括:一主要放大器,具有一第一輸入端及一第一輸出端;一輔助放大器,具有一第二輸入端及一第二輸出端,其中該第二輸出端係直接連接於該第一輸出端以形成一訊號輸出端,不經任何具實質相位變化之傳輸線;及一相位補償器,具有一第三輸入端及一第三輸出端,其中該第三輸出端直接連接於該第二輸入端,不再連接任何具實質相位變化之傳輸線,第三輸入端則連接於第一輸入端以形成訊號輸入端,用以補償存在於該主要放大器與該輔助放大器間之相位差,以使第一輸出端與第二輸出端之輸出為相位相反。
- 如申請專利範圍第1項所述之射頻功率放大器,其中該主要放大器係操作於A類放大模式。
- 如申請專利範圍第1項所述之射頻功率放大器,其中該主要放大器係操作於AB類放大模式。
- 如申請專利範圍第1項所述之射頻功率放大器,其中該操作於B類放大模式。
- 如申請專利範圍第1項所述之射頻功率放大器,其中該操作於C類放大模式。
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TW104129728A TWI573388B (zh) | 2015-09-09 | 2015-09-09 | 具有後置失真線性器之射頻功率放大器 |
US14/948,380 US20170070193A1 (en) | 2015-09-09 | 2015-11-22 | RF Power Amplifier with Post-Distortion Linearizer |
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TW104129728A TWI573388B (zh) | 2015-09-09 | 2015-09-09 | 具有後置失真線性器之射頻功率放大器 |
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US11233483B2 (en) | 2017-02-02 | 2022-01-25 | Macom Technology Solutions Holdings, Inc. | 90-degree lumped and distributed Doherty impedance inverter |
US11159125B2 (en) | 2017-04-24 | 2021-10-26 | Macom Technology Solutions Holdings, Inc. | Inverted Doherty power amplifier with large RF fractional and instantaneous bandwidths |
WO2018197918A1 (en) | 2017-04-24 | 2018-11-01 | Macom Technology Solutions Holdings, Inc. | Improved efficiency, symmetrical doherty power amplifier |
WO2018197919A1 (en) | 2017-04-24 | 2018-11-01 | Macom Technology Solutions Holdings, Inc. | Inverted doherty power amplifier with large rf and instantaneous bandwidths |
FR3070100A1 (fr) * | 2017-08-14 | 2019-02-15 | Macom Technology Solutions Holdings, Inc. | Architecture d'amplificateur de puissance sans modulation, a large bande et a haut rendement |
WO2019069115A1 (en) | 2017-10-02 | 2019-04-11 | Macom Technology Solutions Holdings, Inc. | HIGH PERFORMANCE POWER AMPLIFIER WITHOUT CHARGE MODULATION |
WO2020072898A1 (en) | 2018-10-05 | 2020-04-09 | Macom Technology Solutions Holdings, Inc. | Low-load-modulation power amplifier |
WO2021137951A1 (en) | 2019-12-30 | 2021-07-08 | Macom Technology Solutions Holdings, Inc. | Low-load-modulation broadband amplifier |
Citations (2)
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US8305141B2 (en) * | 2010-01-20 | 2012-11-06 | Postech Academy-Industry Foundation | Distributed Doherty power amplifier |
US9083284B2 (en) * | 2011-03-07 | 2015-07-14 | Intel Corporation | Wide-band multi stage Doherty power amplifier |
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US4701716A (en) * | 1986-05-07 | 1987-10-20 | Rca Corporation | Parallel distributed signal amplifiers |
US7038539B2 (en) * | 2003-05-06 | 2006-05-02 | Powerwave Technologies, Inc. | RF amplifier employing active load linearization |
US7196578B2 (en) * | 2003-05-30 | 2007-03-27 | Lucent Technologies Inc. | Amplifier memory effect compensator |
FR2904739A1 (fr) * | 2006-08-04 | 2008-02-08 | St Microelectronics Nv | Compensation d'un amplificateur comportant au moins deux etages de gain |
US9450541B2 (en) * | 2014-05-13 | 2016-09-20 | Skyworks Solutions, Inc. | Systems and methods related to linear and efficient broadband power amplifiers |
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2015
- 2015-09-09 TW TW104129728A patent/TWI573388B/zh active
- 2015-11-22 US US14/948,380 patent/US20170070193A1/en not_active Abandoned
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8305141B2 (en) * | 2010-01-20 | 2012-11-06 | Postech Academy-Industry Foundation | Distributed Doherty power amplifier |
US9083284B2 (en) * | 2011-03-07 | 2015-07-14 | Intel Corporation | Wide-band multi stage Doherty power amplifier |
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