TWI564951B - Etching device and etching method - Google Patents

Description

Etching device and etching method

The present invention relates to an etching apparatus and an etching method, and more particularly to an etching apparatus and an etching method capable of improving etching quality.

In recent years, the electronic products in daily life have been continuously updated, and the demand for wafers has also increased. Therefore, how to improve the production efficiency and yield of wafers has become a major issue in increasing wafer production.

In conventional wafer processing processes, wafers are often loaded using wafer cassettes to improve wafer processing and handling efficiency. However, in the wet etching process, when the wafer is directly loaded in the wafer cassette and immersed in the etching solution, the portion of the wafer that is in contact with the wafer boat or the portion of the wafer that is shielded by the wafer boat may easily cause etching failure. This leads to a drop in wafer yield, which in turn reduces production efficiency.

In addition, in the conventional wet etching process, a cageless process or a semi-high boat process is often used to reduce the portion of the wafer that is in contact with the wafer boat or the portion of the wafer that is shielded by the boat. Poor etching conditions. However, as wafers are becoming thinner, the warpage of wafers is gradually increasing, which in turn leads to the use of a cassetteless process or a semi-high wafer processing method for thinned wafers.

On the other hand, in the conventional wet etching process, some processes are subjected to a drum type wet etching method, that is, an etching solution is sprayed on the wafer, and the etching solution is sufficiently rotated by rotating the entire boat. The ground contacts and reacts with the wafer to improve the poor etching of the wafer. However, the hardness and impact resistance of the thinned wafer are relatively fragile. If the drum type wet etching method is used, it is easy to cause processing, and the wafer is likely to be broken and collided during the rotation process. Therefore, the thin type is formed. The wafer after the formation is also difficult to process by the drum type wet etching method.

In view of this, how to develop an etching device and an etching method to solve the lack of conventional technology is an urgent problem to be solved by those skilled in the related art.

The purpose of the present invention is to provide an etching apparatus and an etching method for causing wavy fluctuations in the etching solution by the movement of the swinging device to solve problems such as a decrease in wafer yield and a decrease in production efficiency.

Another object of the present invention is to provide an etching apparatus and an etching method. The movement of the oscillating device causes wavy fluctuations of the etching solution, and the wafer swings by the fluctuation of the etching solution, thereby reducing the contact between the wafer and the boat. Area and time to improve wafer yield and production efficiency.

According to the concept of the present invention, one of the broader aspects of the present invention provides an etching apparatus including a tank body and a swinging device. The tank body includes an accommodating space for carrying the chemical solution and the at least one wafer, and the wafer is immersed in the chemical solution. The swinging device is movably disposed in the tank for reciprocating motion to cause the chemical solution to fluctuate and to drive the wafer to oscillate.

According to the concept of the present case, another broader aspect of the present invention is to provide an etching method. The method comprises the following steps: (a) providing a tank body, a swinging device and a lifting device, so that the swinging device reciprocates in the tank body, so that the chemical solution carried by the receiving space of the tank body fluctuates. (b) The lifting device is lowered from a high point to a low point to immerse at least one wafer in the chemical solution. (c) The lifting device is raised from a low point to a high point to allow the wafer to leave the liquid level of the chemical solution. (d) The lifting device is placed at a high point to allow the wafer to leave the chemical solution for the first time. (e) The lifting device is lowered from the high point to the second lowest point, so that the wafer is immersed in the chemical solution. (f) The lifting device is placed at the second lowest point to allow the wafer to remain in the chemical solution for a second time. (g) The lifting device is raised from the second lowest point to the high point to move the wafer away from the liquid level of the chemical solution.

1‧‧‧ etching device

10‧‧‧

100‧‧‧ accommodating space

11‧‧‧Swing device

110‧‧‧First end

111‧‧‧Connection section

112‧‧‧ second end

12‧‧‧ Lifting device

13‧‧‧Actuator

2‧‧‧chemical solution

3‧‧‧ wafer

4‧‧‧The boat

B‧‧‧ bottom

H1‧‧‧ low

H2‧‧‧ high point

H3‧‧‧ lows

S‧‧‧ liquid level

W, W1, W2‧‧‧ side wall

Figure 1A is a schematic view of an etching apparatus of the preferred embodiment of the present invention.

1B is a partial structural view of the etching apparatus of the preferred embodiment of the present invention.

2A to 2F are flowcharts of etching methods of the preferred embodiment of the present invention.

Some exemplary embodiments embodying the features and advantages of the present invention are described in detail in the following description. It is to be understood that the present invention is capable of various modifications in various aspects, and is not intended to limit the scope of the invention.

Please refer to FIG. 1A and FIG. 1B. FIG. 1A is a schematic view of an etching apparatus according to a preferred embodiment of the present invention; FIG. 1B is a partial structural view of the etching apparatus of the preferred embodiment of the present invention. As shown in FIGS. 1A and 1B, the etching apparatus 1 includes a tank body 10, a swinging device 11, a lifting device 12, and an actuator 13. The tank body 10 includes an accommodating space 100 for carrying the chemical solution 2 and at least one wafer 3. In other words, when the wafer 3 is received in the accommodating space 100, the wafer 3 is immersed in the chemical solution 2 for performing. Wet etching . The swinging device 11 is movably disposed in the tank body 10 for reciprocating motion, so that the chemical solution 2 generates wave-like fluctuations with the reciprocating motion of the swinging device 11, and the wafer is driven by the fluctuation of the chemical solution 2. 3 swing. In the present embodiment, the wafer 3 is transported through the wafer boat 4 to avoid collision and damage of the wafer 3, and the wafer boat 4 can accommodate at least one wafer 3, thereby improving processing efficiency. In addition, by the reciprocating motion of the sidewall of the cavity 10 along the oscillating device 11, the wafer 3 is slightly oscillated with the turbulence of the chemical solution 2, so as to prevent the periphery of the wafer 3 from continuously contacting the wafer boat 4. The trench (not shown) improves the etching failure caused by the wafer contacting the trench of the wafer boat 4.

Referring again to FIG. 1B, as shown, the swinging device 11 includes a first end portion 110, a connecting portion 111, and a second end portion 112. The first end portion 110 of the portion of the oscillating device 11 is immersed in the chemical solution 2, and the second end portion 112 of the oscillating device 11 is coupled to the actuator 13. In this embodiment, the actuator 13 can reciprocate within a certain distance to reciprocate the second end portion 112 of the swinging device by the actuator 13, and then pass the second end of the swinging device 11 112 drives the first end portion 110 to reciprocate. In some embodiments, the connecting portion 111 is connected between the first end portion 110 and the second end portion 112 of the swinging device 11, and the first end portion 110, the connecting portion 111 and the second end portion 112 are integrally formed. The one end portion 110 forms an inverted U shape with respect to the second end portion 112, but is not limited thereto. In other embodiments, the connecting section 111 is a swinging member that can swing over a specific range of angles.

In some embodiments, the chemical solution 2 is an etching solution, and the wafer 3 can be etched, and the material of the swinging device 11 is selected from materials resistant to the corrosion of the chemical solution 2.

Referring to FIG. 1B again, in the embodiment, the swinging device 11 is movably disposed on the sidewall W of the cavity 10, that is, when the wafer 3 is immersed in the chemical solution 2, the swinging device 11 is along the side. The wall W reciprocates. In some embodiments, the number of the swinging devices 11 is two, respectively disposed on the two opposite sidewalls W1 and W2 of the slot body 10, and when the wafer 3 is immersed in the chemical solution, the two swinging devices 11 are synchronized. The side walls W1 and W2 are reciprocated, in other words, the lines formed by the two swinging devices 11 at different positions are always parallel to each other, but not limited thereto. In other embodiments, the number of swinging devices 11 can be increased as needed, and the manner of movement of each of the swinging devices 11 can also be adjusted to form different wave patterns. Further, in the present embodiment, the direction in which the swinging device 11 reciprocates is perpendicular to the crystal plane of the wafer 3.

Referring to FIG. 1A again, the lifting device 12 is movably disposed on the tank body 10. The wafer boat 4 can be fixed to the lifting device 12, so that the wafer 3 accommodated in the boat 4 can be lifted and lowered by the lifting device 12. Further, the direction in which the lifting device 12 performs the lifting operation is perpendicular to the direction in which the swinging device 11 reciprocates.

Please refer to FIG. 1A and FIG. 2A to FIG. 2F. FIG. 2A to FIG. 2F are flowcharts of etching methods of the preferred embodiment of the present invention. As shown in FIGS. 2A to 2F, the lifting device 12 can be lifted and lowered between the low point H1 and the high point H2. When the lifting device is lowered to the low point H1, the wafer 3 is completely immersed in the chemical solution. In 2, when the lifting device 12 is raised to the high point H2, the wafer 3 completely leaves the liquid level S of the chemical solution 2.

Referring to FIG. 2A to FIG. 2F again, as shown in the figure, the etching method of the preferred wet etching operation comprises the following steps: First, as shown in FIG. 2A, the etching apparatus 1 is provided to include the tank body 10 and the swinging device 11 And the lifting device 12, and the tank body 10 includes an accommodating space 100 for carrying the chemical solution 2 by the accommodating space 100. The swinging device 11 can reciprocate within a specific range to cause the chemical solution 2 to fluctuate and drive at least one wafer 3 to swing. Then, as shown in FIG. 2A, the lifting device 12 is lowered from the high point H2 to the low point H1, so that the bottom of the boat 4 and the receiving space 100 of the tank body 10 are provided. The bottom surface B is in contact to completely immerse the wafer 3 in the chemical solution 2.

Then, as shown in FIG. 2B, the lifting device 12 is raised from the low point H1 to the high point H2 so that the wafer 3 immersed in the chemical solution 2 completely leaves the liquid level S of the chemical solution 2. Subsequently, as shown in Fig. 2C, the lifting device 12 is placed at the high point H2 to cause the wafer 3 to leave the chemical solution 2 for the first time. Next, as shown in FIG. 2D, the lifting device is lowered from the high point H2 to the second lowest point H3, so that the wafer 3 is completely immersed in the chemical solution 2. Then, as shown in Fig. 2E, the lifting device 12 is placed at the second lowest point H3, and the wafer 3 is immersed in the chemical solution 2 for a second time. Finally, as shown in FIG. 2F, the lifting device 12 is raised from the lower low point H3 to the high point H2 to completely separate the wafer from the liquid level S of the chemical solution 2 to complete the wet etching operation. Thereby, in addition to the reciprocating motion of the swinging device 11, the chemical solution 2 is wave-likely fluctuated, so that the wafer 3 can be swung with the chemical solution 2, and the wafer 3 can be improved by the lifting operation of the lifting device 12. As the chemical solution 2 oscillates, the time for the wafer 3 to contact with the wafer boat 4 is shortened, the area where the wafer 3 contacts the wafer boat 4 is reduced, and the edge of the wafer 3 and the groove of the boat 4 are improved. The close fitting leads to problems of poor etching and the advantages of improved wafer yield and production efficiency.

In summary, the etching apparatus and the etching method of the present invention can cause the etching solution to fluctuate by the reciprocating motion of the swinging device, and oscillate the wafer by the fluctuation of the etching solution, thereby reducing the wafer and the boat. The area and time of contact, and the advantages of improved wafer yield and production efficiency.

This case has been modified by people who are familiar with the technology, but it is not intended to be protected by the scope of the patent application.

1‧‧‧ etching device

10‧‧‧

100‧‧‧ accommodating space

11‧‧‧Swing device

12‧‧‧ Lifting device

13‧‧‧Actuator

2‧‧‧chemical solution

3‧‧‧ wafer

4‧‧‧The boat

Claims (9)

An etching apparatus comprising: a tank body, comprising an accommodating space for carrying a chemical solution and at least one wafer, wherein the wafer is immersed in the chemical solution; and a swinging device movably disposed on the a side wall of the tank for performing a reciprocating motion to cause the chemical solution to fluctuate and to drive the wafer to oscillate, and when the wafer is immersed in the chemical solution, the swinging device is performed along the sidewall The reciprocating motion. The etching apparatus of claim 1, further comprising an actuator, wherein the swinging device further comprises a first end and a second end, wherein a portion of the first end is immersed in the In the chemical solution, the second end is coupled to the actuator to drive the second end of the swinging device by the actuator, and the second end of the swinging device is driven by the second end This reciprocation is performed at one end. The etching device of claim 2, wherein the swinging device further comprises a connecting portion connected between the first end portion and the second end portion of the swinging device, and the first end portion, The second end portion and the connecting portion are integrally formed, the first end portion being opposite to the second end portion. The etching device of claim 1, wherein the number of the swinging devices is two, respectively disposed on two opposite sidewalls of the cavity, and when the wafer is immersed in the chemical solution, the two The oscillating means synchronizes the reciprocating motion along the side wall. The etching apparatus of claim 1, wherein the reciprocating direction is perpendicular to a crystal plane of the wafer. The etching apparatus of claim 1, wherein the etching apparatus further comprises a lifting device movably disposed on the tank body, wherein the lifting operation is performed by the lifting device, and the lifting operation is performed. The direction is perpendicular to the direction of the reciprocating motion. The etching apparatus of claim 6, wherein when the lifting device is lowered to a low point, the wafer is completely immersed in the chemical solution, and when the lifting device is raised to a high point, the crystal The circle completely leaves the liquid level of the chemical solution. An etching method comprising the steps of: (a) providing a tank body, a swinging device and a lifting device, wherein the swinging device performs a reciprocating motion in the tank body, so that one of the tank bodies accommodates a space bearing a chemical The solution is fluctuating; (b) the lifting device is lowered from a high point to a low point to immerse at least one wafer in the chemical solution; (c) the lifting device is raised from the low point to the high point, So that the wafer leaves the liquid surface of the chemical solution; (d) the lifting device is placed at the high point to cause the wafer to leave the chemical solution for a first time; (e) the lifting device is from the high point Dropping to a low point to immerse the wafer in the chemical solution; (f) the lifting device is placed at the low point to immerse the wafer in the chemical solution for a second time; g) The lifting device is raised from the low point to the high point to cause the wafer to leave the liquid level of the chemical solution. The etching method as described in claim 8 of the patent application, after the step (g), repeating the step (d) to the step (g) at least once.