TWI564355B - Composition for forming silica layer, method for manufacturing the same, silica layer using the same, and method for manufacturing silica layer - Google Patents

Composition for forming silica layer, method for manufacturing the same, silica layer using the same, and method for manufacturing silica layer Download PDF

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TWI564355B
TWI564355B TW100147708A TW100147708A TWI564355B TW I564355 B TWI564355 B TW I564355B TW 100147708 A TW100147708 A TW 100147708A TW 100147708 A TW100147708 A TW 100147708A TW I564355 B TWI564355 B TW I564355B
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TW201233741A (en
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尹熙燦
郭澤秀
金奉煥
裵鎮希
吳正堈
林相學
韓東一
金相均
李真旭
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第一毛織股份有限公司
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Description

用於形成矽氧層的組合物、用於製造該組合物的方法、使用該組合物的矽氧層及用於製造矽氧層的方法Composition for forming a ruthenium oxide layer, method for producing the composition, ruthenium oxide layer using the composition, and method for producing a ruthenium oxide layer 發明領域Field of invention

本發明涉及一種用於形成矽氧層(氧化矽層,silica layer)的組合物、一種製造該組合物的方法、一種利用該組合物的矽氧層以及一種製造矽氧層的方法。The present invention relates to a composition for forming a silicon oxide layer, a method of making the composition, a silicon oxide layer using the composition, and a method of producing a silicon oxide layer.

發明背景Background of the invention

隨著半導體技術不斷發展,對形成具有改善的性能並集成較小半導體晶片的高集成和更快的半導體記憶體元件有持續的研究。在這些半導體記憶體元件之中,例如可以使用DRAM(動態隨機存取記憶體)。DRAM能夠自由地輸入和輸出資訊,並可以實現大容量。As semiconductor technology continues to evolve, there is ongoing research into the formation of highly integrated and faster semiconductor memory components with improved performance and integration of smaller semiconductor wafers. Among these semiconductor memory elements, for example, a DRAM (Dynamic Random Access Memory) can be used. DRAM is free to input and output information and can achieve large capacity.

DRAM可以包括,例如多個包括一個MOS電晶體(MOS電晶體)和一個電容器的單元(unit cell)。該電容器可以包括兩個電極和設置在其間的介電層。根據例如介電常數、介電層的厚度、電極的面積等,電容器可以具有各種容量。The DRAM may include, for example, a plurality of unit cells including one MOS transistor (MOS transistor) and one capacitor. The capacitor can include two electrodes and a dielectric layer disposed therebetween. The capacitor may have various capacities depending on, for example, a dielectric constant, a thickness of the dielectric layer, an area of the electrode, and the like.

隨著半導體晶片的尺寸減小,其內的電容器尺寸也會減小。然而,較小的電容器需要足夠的儲存容量。可以藉由例如增加垂直面積而不是減小水平面積來增加總有效面積(overall active area),而實現電容器的更大容量。當以這種方式形成電容器時,可以使用用於形成矽氧層的組合物來填充模具及其上的間隙,並有效地形成相比於較小水平面積為相對較高的電極。As semiconductor wafers are reduced in size, the size of the capacitors within them will also decrease. However, smaller capacitors require sufficient storage capacity. A larger capacity of the capacitor can be achieved by, for example, increasing the vertical area rather than reducing the horizontal area to increase the overall active area. When the capacitor is formed in this manner, the composition for forming the tantalum layer can be used to fill the mold and the gap thereon, and to effectively form a relatively high electrode compared to a smaller horizontal area.

發明概要Summary of invention

本發明的一個實施方式提供了一種用於形成矽氧層的組合物,其包含具有減少微粒(particulate)的氫化聚矽氧矽氮烷(hydrogenated polysiloxazane)。One embodiment of the present invention provides a composition for forming a ruthenium oxide layer comprising a hydrogenated polysiloxazane having reduced particulates.

本發明的另一個實施方式提供了一種製造用於形成矽氧層的組合物的方法,該組合物包括具有減少微粒的氫化聚矽氧矽氮烷。Another embodiment of the present invention provides a method of making a composition for forming a ruthenium oxide layer, the composition comprising a hydrogenated polyxaazepine having reduced particulates.

本發明的又一個實施方式提供了一種具有小數量的缺陷的矽氧層。Yet another embodiment of the present invention provides a silicon oxide layer having a small number of defects.

本發明的又一個實施方式提供了一種製造具有小數量的缺陷的矽氧層的方法。Yet another embodiment of the present invention provides a method of fabricating a silicon oxide layer having a small number of defects.

根據本發明的一個實施方式,提供了一種用於形成矽氧層的組合物,其包含選自氫化聚矽氮烷(hydrogenated polysilazane)、氫化聚矽氧矽氮烷及其等之組合中的一種,其中基於氫化聚矽氮烷和氫化聚矽氧矽氮烷的總量,折算為(reduced to)聚苯乙烯時的重量平均分子量大於或等於約50000的氫化聚矽氮烷和氫化聚矽氧矽氮烷的總和的濃度範圍為小於或等於約0.1wt%。According to an embodiment of the present invention, there is provided a composition for forming a ruthenium oxide layer comprising one selected from the group consisting of hydrogenated polysilazane, hydrogenated polyoxazane, and the like. , wherein, based on the total amount of the hydrogenated polyazide and the hydrogenated polyoxazane, the hydrogenated polyazane and the hydrogenated polyoxynium having a weight average molecular weight greater than or equal to about 50,000 when converted to polystyrene are converted The concentration of the sum of the decazane ranges from less than or equal to about 0.1% by weight.

基於氫化聚矽氮烷和氫化聚矽氧矽氮烷的總量,重量平均分子量(折算為聚苯乙烯)大於或等於約50000的氫化聚矽氮烷和氫化聚矽氧矽氮烷的總和的濃度範圍可以為小於或等於約0.05wt%。Based on the total amount of hydrogenated polyazane and hydrogenated polyoxazane, the sum of the hydrogenated polyazoxide and the hydrogenated polyoxazane having a weight average molecular weight (converted to polystyrene) of greater than or equal to about 50,000 The concentration may range from less than or equal to about 0.05% by weight.

用於形成矽氧層的組合物的液體中微粒(in-liquid particulate)的數量為少於或等於約100/cc。The amount of in-liquid particulate of the composition used to form the siloxane layer is less than or equal to about 100/cc.

氫化聚矽氮烷或氫化聚矽氧矽氮烷可以包括由以下化學式1表示的部分。The hydrogenated polyazane or hydrogenated polyoxazane may include a moiety represented by the following Chemical Formula 1.

在化學式1中,R1至R3各自獨立地是氫、取代或未取代的C1至C30烷基、取代或未取代的C3至C30環烷基、取代或未取代的C6至C30芳基、取代或未取代的C7至C30芳烷基、取代或未取代的C1至C30雜烷基、取代或未取代的C2至C30雜環烷基、取代或未取代的C2至C30烯基、取代或未取代的烷氧基、取代或未取代的羰基、羥基、或其等之組合。In Chemical Formula 1, R 1 to R 3 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, Substituted or unsubstituted C7 to C30 aralkyl, substituted or unsubstituted C1 to C30 heteroalkyl, substituted or unsubstituted C2 to C30 heterocycloalkyl, substituted or unsubstituted C2 to C30 alkenyl, substituted or An unsubstituted alkoxy group, a substituted or unsubstituted carbonyl group, a hydroxyl group, or a combination thereof.

氫化聚矽氧矽氮烷可以進一步包括由以下化學式2表示的部分。The hydrogenated polyoxazane may further include a moiety represented by the following Chemical Formula 2.

在化學式2中,R4至R7各自獨立地是氫、取代或未取代的C1至C30烷基、取代或未取代的C3至C30環烷基、取代或未取代的C6至C30芳基、取代或未取代的C7至C30芳烷基、取代或未取代的C1至C30雜烷基、取代或未取代的C2至C30雜環烷基、取代或未取代的C2至C30烯基、取代或未取代的烷氧基、取代或未取代的羰基、羥基、或其等之組合。In Chemical Formula 2, R 4 to R 7 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, Substituted or unsubstituted C7 to C30 aralkyl, substituted or unsubstituted C1 to C30 heteroalkyl, substituted or unsubstituted C2 to C30 heterocycloalkyl, substituted or unsubstituted C2 to C30 alkenyl, substituted or An unsubstituted alkoxy group, a substituted or unsubstituted carbonyl group, a hydroxyl group, or a combination thereof.

氫化聚矽氧矽氮烷可以在其末端包括由以下化學式3表示的部分,並且具有的氧含量為約0.2 wt%至約3 wt%,以及基於Si-H鍵的總量,可以以約15 wt%至約35 wt%的量包括由以下化學式3表示的部分。The hydrogenated polyoxazane may include a moiety represented by the following Chemical Formula 3 at its end, and has an oxygen content of from about 0.2 wt% to about 3 wt%, and may be about 15 based on the total amount of Si-H bonds. The amount of wt% to about 35 wt% includes the moiety represented by the following Chemical Formula 3.

<化學式3><Chemical Formula 3>

*-SiH3*-SiH 3 .

氫化聚矽氮烷或氫化聚矽氧矽氮烷的重量平均分子量可以為約1000至約10000。The hydrogenated polyazane or hydrogenated polyoxazane may have a weight average molecular weight of from about 1,000 to about 10,000.

氫化聚矽氮烷和氫化聚矽氧矽氮烷的總和可以在約0.1wt%至約50wt%的範圍。The sum of the hydrogenated polyazane and the hydrogenated polyoxazane may range from about 0.1 wt% to about 50 wt%.

根據本發明的另一個實施方式,提供了一種製造包括氫化聚矽氮烷或氫化聚矽氧矽氮烷的用於形成矽氧層的組合物的方法,該方法包括將鹵代矽烷化合物與溶劑混合,並對其進行共氨解(coammonolyze)以合成氫化聚矽氮烷或氫化聚矽氧矽氮烷,由此形成包括氫化聚矽氮烷或氫化聚矽氧矽氮烷的產物溶液(resultant solution);在該產物溶液中加入C4至C10烷烴、C4至C10環烷烴、C4至C10烯烴、C4至C10環烯烴、十氫化萘(decalin)、四氫化萘(tetralin)、對異丙基甲苯(p-cymene)、對薄荷烷(p-menthane)、α-蒎烯(α-pinene)或其等之至少一種的組合的額外溶劑(additional solvent),以析出不溶性沉澱物;以及除去析出的不溶性沉澱物。According to another embodiment of the present invention, there is provided a process for the manufacture of a composition for forming a ruthenium oxide layer comprising a hydrogenated polyazane or a hydrogenated polyxaazepine, the process comprising reacting a halogenated decane compound with a solvent Mixing and coammonolyze to synthesize hydrogenated polyazane or hydrogenated polyoxazane, thereby forming a product solution comprising hydrogenated polyazane or hydrogenated polyoxazane (resultant) Solution); adding C4 to C10 alkane, C4 to C10 cycloalkane, C4 to C10 olefin, C4 to C10 cyclic olefin, decalin, tetralin, p-isopropyl toluene to the product solution (p-cymene), an additional solvent for the combination of at least one of p-menthane, alpha-pinene or the like to precipitate insoluble precipitates; and to remove precipitated Insoluble precipitate.

在添加額外溶劑之前所述溶液中包含的溶劑相對於該額外溶劑的重量比可以在約1:1至約1:30的範圍內。The weight ratio of the solvent contained in the solution to the additional solvent before the addition of the additional solvent may range from about 1:1 to about 1:30.

該方法可以進一步包括在移除析出的不溶性沉澱物之後除去該額外溶劑。The method can further include removing the additional solvent after removing the precipitated insoluble precipitate.

除去析出的不溶性沉澱物可以包括利用孔徑為約0.01至約0.2μm的濾器過濾所析出的不溶性沉澱物以將其除去。The removal of the precipitated insoluble precipitate may include filtering the precipitated insoluble precipitate by a filter having a pore diameter of from about 0.01 to about 0.2 μm to remove it.

根據本發明的另一個實施方式,提供了一種矽氧層,其藉由利用用於形成矽氧層的組合物製造,並且每8英寸晶圓,具有1000個或更少的尺寸小於或等於約5μm的缺陷。According to another embodiment of the present invention, there is provided a silicon oxide layer fabricated by using a composition for forming a germanium oxide layer, and having 1000 or less dimensions per 8 inch wafer less than or equal to about 5μm defect.

根據本發明的又一個實施方式,提供了一種製造缺陷減少的矽氧層的方法,該方法包括將用於形成矽氧層的組合物塗覆在基板(substrate)上;乾燥塗覆有用於形成矽氧層的組合物的該基板;使其在高於或等於約200℃的包括水蒸氣的氣氛中發生固化。According to still another embodiment of the present invention, there is provided a method of manufacturing a defect-reduced tantalum layer, the method comprising coating a composition for forming a tantalum layer on a substrate; drying coating for forming The substrate of the composition of the ruthenium layer; is cured in an atmosphere comprising water vapor at a temperature of about 200 ° C or higher.

在下文中將詳細描述本發明的其它實施方式。Other embodiments of the invention are described in detail below.

當利用根據本發明的包括氫化聚矽氧矽氮烷的用於形成矽氧層的組合物來形成矽氧層時,缺陷顯著減少,從而提高矽氧層所需的絕緣特性和間隙填充性能。When the composition for forming a tantalum layer comprising a hydrogenated polyxaazepine according to the present invention is used to form the tantalum layer, the defects are remarkably reduced, thereby improving the insulating properties and gap filling properties required for the tantalum layer.

圖式簡單說明Simple illustration

第1圖為曲線圖,示出了從實施例3和比較例4獲得的聚矽氮烷和矽氧矽氮烷(siloxazane)溶液在高靈敏度GPC(凝膠滲透色譜)上的測量結果。Fig. 1 is a graph showing the results of measurement of a polyoxazane and a siloxazane solution obtained from Example 3 and Comparative Example 4 on a high sensitivity GPC (gel permeation chromatography).

詳細說明Detailed description

本發明的示例性實施方式將在下文中詳細描述。然而,這些實施方式僅為示例性的,並不限定本發明。Exemplary embodiments of the present invention will be described in detail below. However, these embodiments are merely exemplary and do not limit the invention.

如本文所使用的,在沒有另外提供定義時,術語“取代的”是指被至少一個取代基取代的化合物,其中的取代基選自鹵素(F,Br,Cl或I)、羥基、烷氧基、硝基、氰基、胺基、疊氮基、脒基(amidino group)、肼基(hydrazino)、肼叉基(hydrazono group)、羰基、胺甲醯基、巰基、酯基、羧基或其鹽、磺酸基或其鹽、磷酸基或其鹽、烷基、C2至C16烯基、C2至C16炔基、芳基、C7至C13芳烷基、C1至C4氧烷基、C1至C20雜烷基、C3至C20雜芳烷基、C3至C16環烷基、C3至C15環烯基、C6至C15環炔基、C1至C16雜環烷基、及其等之組合。As used herein, the term "substituted", when not otherwise defined, refers to a compound substituted with at least one substituent selected from halo (F, Br, Cl or I), hydroxy, alkoxy. Base, nitro, cyano, amine, azide, amidino group, hydrazino, hydrazono group, carbonyl, amine mercapto, thiol, ester, carboxyl or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, an alkyl group, a C2 to C16 alkenyl group, a C2 to C16 alkynyl group, an aryl group, a C7 to C13 aralkyl group, a C1 to C4 oxyalkyl group, C1 to C20 heteroalkyl, C3 to C20 heteroarylalkyl, C3 to C16 cycloalkyl, C3 to C15 cycloalkenyl, C6 to C15 cycloalkynyl, C1 to C16 heterocycloalkyl, and combinations thereof.

如本文所使用的,在沒有另外提供定義時,字首“雜”可以指包括1至3個選自N、O、S和P的雜原子的化合物。As used herein, when a definition is not otherwise provided, the prefix "hetero" may refer to a compound including 1 to 3 hetero atoms selected from N, O, S, and P.

根據本發明的實施方式,用於形成矽氧層的組合物包括選自氫化聚矽氮烷、氫化聚矽氧矽氮烷及其組合中的一種,用於形成矽氧層的組合物除去了高分子微粒,且基於氫化聚矽氮烷和氫化聚矽氧矽氮烷的總量,重量平均分子量(折算為聚苯乙烯)大於或等於約50000的氫化聚矽氮烷和氫化聚矽氧矽氮烷的總和的濃度範圍為小於或等於約0.1wt%。According to an embodiment of the present invention, the composition for forming the ruthenium oxide layer comprises one selected from the group consisting of hydrogenated polyazane, hydrogenated polyoxazane, and combinations thereof, and the composition for forming the ruthenium oxide layer is removed. Polymer microparticles, and based on the total amount of hydrogenated polyazide and hydrogenated polyoxazane, a weight average molecular weight (converted to polystyrene) of greater than or equal to about 50,000 hydrogenated polyazane and hydrogenated polyoxonium The concentration of the sum of the alkane ranges from less than or equal to about 0.1% by weight.

藉由加熱和氧化反應將氫化聚矽氮烷或氫化聚矽氧矽氮烷轉化為凝結的矽氧玻璃(silica glass)材料時,其可以用於絕緣層、隔離層、硬塗層(hard coating)等。當使用該組合物形成矽氧層時,可以控制和減少層中的空隙或缺陷,因此它可以用於製造要求高品質電特性的裝置如半導體、液晶等。When a hydrogenated polyazide or a hydrogenated polyoxazepine is converted into a condensed silica glass material by heating and oxidation reaction, it can be used for an insulating layer, a separator, a hard coating (hard coating) )Wait. When the composition is used to form a silicon oxide layer, voids or defects in the layer can be controlled and reduced, so that it can be used to manufacture devices requiring high quality electrical characteristics such as semiconductors, liquid crystals and the like.

特別地,用於形成矽氧層的組合物中包含的流體微粒(fluid particulate)可以在利用用於形成矽氧層的組合物製造的矽氧層中引起空隙或缺陷,因此用於形成矽氧層的組合物可以是除去流體微粒的組合物,這可以使用高靈敏度GPC(凝膠滲透色譜)進行分析。In particular, fluid particulates contained in the composition for forming the ruthenium oxide layer may cause voids or defects in the ruthenium oxide layer produced using the composition for forming the ruthenium oxide layer, and thus are used for forming ruthenium oxide. The composition of the layer may be a composition that removes fluid particles, which can be analyzed using high sensitivity GPC (gel permeation chromatography).

從用於形成矽氧層的組合物中除去高分子微粒可以根據以下方法實現。在溶液狀態下,除去高分子微粒的用於形成矽氧層的組合物可以具有的液體中微粒的數量為0至約100/cc。Removal of the polymer fine particles from the composition for forming the hafnium layer can be achieved by the following method. In the solution state, the composition for forming the ruthenium oxide layer from which the polymer particles are removed may have a number of particles in the liquid of from 0 to about 100/cc.

高分子微粒可以是選自折算為聚苯乙烯時重量平均分子量大於或等於約50000的氫化聚矽氮烷、氫化聚矽氧矽氮烷及其等之組合中的一種,例如,折算為聚苯乙烯時,重量平均分子量為約50000至約5000000的氫化聚矽氮烷、氫化聚矽氧矽氮烷、及其等之組合。The polymer microparticles may be one selected from the group consisting of hydrogenated polyazane, hydrogenated polyoxazane, and the like, which are selected from polystyrene when the weight average molecular weight is greater than or equal to about 50,000, for example, converted to polyphenylene. In the case of ethylene, the weight average molecular weight is from about 50,000 to about 5,000,000 of a hydrogenated polyazane, a hydrogenated polyoxazane, and combinations thereof.

考慮到缺陷,基於氫化聚矽氮烷和氫化聚矽氧矽氮烷的總量的濃度,可以包括濃度0wt%至約0.1wt%,例如濃度為0wt%至約0.07wt%,或濃度為0wt%至約0.05wt%的包含選自高分子氫化聚矽氮烷、氫化聚矽氧矽氮烷、及其等之組合中的一種的高分子微粒。在該範圍內,其可有效地用於要求高品質電特性的裝置如半導體,液晶等。由此,可以將高分子氫化聚矽氮烷或氫化聚矽氧矽氮烷微粒的濃度控制在該範圍中。In view of the defect, the concentration based on the total amount of the hydrogenated polyazide and the hydrogenated polyoxazane may include a concentration of 0 wt% to about 0.1 wt%, for example, a concentration of 0 wt% to about 0.07 wt%, or a concentration of 0 wt. From about 0.05% by weight of the polymer fine particles comprising one selected from the group consisting of polymer hydrogenated polyazane, hydrogenated polyoxazane, and combinations thereof. Within this range, it can be effectively used for devices requiring high quality electrical characteristics such as semiconductors, liquid crystals and the like. Thereby, the concentration of the polymer hydrogenated polyazane or the hydrogenated polyoxazepine fine particles can be controlled within this range.

氫化聚矽氮烷或氫化聚矽氧矽氮烷可以包括由以下化學式1表示的部分。The hydrogenated polyazane or hydrogenated polyoxazane may include a moiety represented by the following Chemical Formula 1.

在化學式1中,R1至R3各自獨立地是氫、取代或未取代的C1至C30烷基、取代或未取代的C3至C30環烷基、取代或未取代的C6至C30芳基、取代或未取代的C7至C30芳烷基、取代或未取代的C1至C30雜烷基、取代或未取代的C2至C30雜環烷基、取代或未取代的C2至C30烯基、取代或未取代的烷氧基、取代或未取代的羰基、羥基、或其等之組合。In Chemical Formula 1, R 1 to R 3 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, Substituted or unsubstituted C7 to C30 aralkyl, substituted or unsubstituted C1 to C30 heteroalkyl, substituted or unsubstituted C2 to C30 heterocycloalkyl, substituted or unsubstituted C2 to C30 alkenyl, substituted or An unsubstituted alkoxy group, a substituted or unsubstituted carbonyl group, a hydroxyl group, or a combination thereof.

氫化聚矽氧矽氮烷可以進一步包括由以下化學式2表示的部分。The hydrogenated polyoxazane may further include a moiety represented by the following Chemical Formula 2.

在化學式2中,R4至R7各自獨立地是氫、取代或未取代的C1至C30烷基、取代或未取代的C3至C30環烷基、取代或未取代的C6至C30芳基、取代或未取代的C7至C30芳烷基、取代或未取代的C1至C30雜烷基、取代或未取代的C2至C30雜環烷基、取代或未取代的C2至C30烯基、取代或未取代的烷氧基、取代或未取代的羰基、羥基、或其等之組合。In Chemical Formula 2, R 4 to R 7 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, Substituted or unsubstituted C7 to C30 aralkyl, substituted or unsubstituted C1 to C30 heteroalkyl, substituted or unsubstituted C2 to C30 heterocycloalkyl, substituted or unsubstituted C2 to C30 alkenyl, substituted or An unsubstituted alkoxy group, a substituted or unsubstituted carbonyl group, a hydroxyl group, or a combination thereof.

以這種方式,氫化聚矽氧矽氮烷在結構中包含不同於矽-氮(Si-N)鍵的矽-氧-矽(Si-O-Si)鍵。該矽-氧-矽(Si-O-Si)鍵可以減輕(relieve)在藉由熱處理進行固化期間的應力,從而減少收縮。In this manner, the hydrogenated polyxaazepine contains a 矽-oxygen-(Si-O-Si) bond different from the 矽-nitrogen (Si-N) bond in the structure. The bismuth-oxygen-germanium (Si-O-Si) bond can relieve stress during curing by heat treatment, thereby reducing shrinkage.

為了在加熱(熱)處理期間抑制結構收縮,氫化聚矽氧矽氮烷中的氧含量範圍可以為約0.2 wt%至約3 wt%。當在該範圍內包括時,應力藉由結構中的矽-氧-矽(Si-O-Si)鍵被充分鬆弛,而防止加熱處理時的收縮,使得可以防止在獲得的載入圖案(charged pattern)中產生裂縫。In order to inhibit structural shrinkage during the heating (heat) treatment, the oxygen content in the hydrogenated polyxaazepine may range from about 0.2 wt% to about 3 wt%. When included in the range, the stress is sufficiently relaxed by the 矽-oxygen-矽 (Si-O-Si) bond in the structure, thereby preventing shrinkage during heat treatment, so that the obtained load pattern can be prevented (charged) A crack occurs in the pattern).

在這方面,其可以在該範圍內以約0.4至約2 wt%包括。In this regard, it can be included in this range from about 0.4 to about 2 wt%.

氫化聚矽氧矽氮烷可以在其末端包括由以下化學式3表示的部分。The hydrogenated polyoxazepine may include a moiety represented by the following Chemical Formula 3 at its end.

<化學式3><Chemical Formula 3>

*-SiH3 *-SiH 3

由以上化學式3表示的部分具有用氫封端(capped)的末端,並且基於氫化聚矽氧矽氮烷中的Si-H鍵的總量,可以以約15 wt%至約35 wt%的量包括。在該範圍內,其可以在熱處理期間產生足夠的氧化反應,而且可以防止SiH3散佈到SiH4中。因此,Si-H鍵可以防止收縮,進而防止載入圖案上的裂縫。The portion represented by the above Chemical Formula 3 has a capped end with hydrogen, and may be in an amount of from about 15 wt% to about 35 wt% based on the total amount of Si-H bonds in the hydrogenated polyoxazane. include. Within this range, it is possible to generate a sufficient oxidation reaction during the heat treatment, and it is possible to prevent the SiH 3 from being dispersed into the SiH 4 . Therefore, the Si-H bond can prevent shrinkage, thereby preventing cracks on the loaded pattern.

根據一個實施方式,氫化聚矽氮烷和/或氫化聚矽氧矽氮烷的重量平均分子量(Mw)沒有特別限定,但考慮到在有機溶劑中的溶解性或在基板上的塗覆特性,該重量平均分子量的範圍可以為約1000至約10000。According to one embodiment, the weight average molecular weight (Mw) of the hydrogenated polyazide and/or the hydrogenated polyoxazane is not particularly limited, but in view of solubility in an organic solvent or coating characteristics on a substrate, The weight average molecular weight can range from about 1000 to about 10,000.

根據另一個實施方式,基於用於形成矽氧層的組合物的總量,可以包括約0.1 wt%至約50 wt%的氫化聚矽氮烷和/或氫化聚矽氧矽氮烷。當在該範圍內包括時,其可以維持適當的黏度。另外,當包括氫化聚矽氮烷和/或氫化聚矽氧矽氮烷的用於形成矽氧層的組合物填充間隙時,其可以平滑均勻且無空隙地形成。According to another embodiment, from about 0.1 wt% to about 50 wt% of the hydrogenated polyazane and/or the hydrogenated polyxaazepine may be included based on the total amount of the composition used to form the rhodium oxide layer. When included within this range, it can maintain an appropriate viscosity. In addition, when the composition for forming the ruthenium oxide layer including the hydrogenated polyazane and/or the hydrogenated polyxaazepine fills the gap, it can be formed uniformly and without voids.

用於形成矽氧層的組合物可以進一步包括熱生酸劑(thermal acid generator,TAG)。The composition for forming the ruthenium oxide layer may further include a thermal acid generator (TAG).

熱生酸劑可以是用於改善氫化聚矽氮烷和/或氫化聚矽氧矽氮烷顯影性能的添加劑。氫化聚矽氮烷和/或氫化聚矽氧矽氮烷可以在相對較低的溫度下顯影(developing)。The thermal acid generator may be an additive for improving the development performance of the hydrogenated polyazane and/or hydrogenated polyoxazane. The hydrogenated polyazane and/or hydrogenated polyoxazane can be developed at relatively low temperatures.

熱生酸劑可以包括無特別限制的任何化合物,只要它藉由熱產生酸(H+)。尤其是,它可以包括在90℃或更高溫度下活化且產生足夠的酸、而且具有低揮發性的化合物。這樣的熱生酸劑可以例如選自對甲苯磺酸硝基苄基酯、苯磺酸硝基苄基酯、磺酸苯酚酯、及其等之組合。The thermal acid generator may include any compound which is not particularly limited as long as it generates an acid (H + ) by heat. In particular, it may include a compound which is activated at 90 ° C or higher and which produces sufficient acid and which has low volatility. Such a thermal acid generator may, for example, be selected from the group consisting of nitrobenzyl p-toluenesulfonate, nitrobenzyl benzenesulfonate, phenol sulfonate, and combinations thereof.

基於用於形成矽氧層的組合物的總量,可以包括量為約0.01wt%至25wt%的熱生酸劑。在該範圍內,氫化聚矽氧矽氮烷可在低溫下顯影,同時具有改善的塗覆性能。The amount of the thermal acid generator may be included in an amount of from about 0.01% by weight to about 25% by weight based on the total amount of the composition for forming the siloxane layer. Within this range, the hydrogenated polyoxazane can be developed at a low temperature while having improved coating properties.

用於形成矽氧層的組合物可以進一步包括表面活性劑。The composition for forming the ruthenium oxide layer may further include a surfactant.

表面活性劑沒有特別限定,並且包括例如非離子類表面活性劑:聚氧乙烯烷基醚類如聚氧乙烯十二烷基醚、聚氧乙烯十八烷基醚、聚氧乙烯十六烷基醚、聚氧乙烯油基醚等;聚氧乙烯烷基烯丙基醚類如聚氧乙烯壬基酚醚等;聚氧乙烯-聚氧丙烯嵌段共聚物類;聚氧乙烯山梨醇脂肪酸酯類如山梨醇單月桂酸酯、山梨醇單棕櫚酸酯、山梨醇單硬脂酸酯、山梨醇單油酸酯、聚氧乙烯山梨醇單硬脂酸酯、聚氧乙烯山梨醇三油酸酯、聚氧乙烯山梨醇三硬脂酸酯等;以氟為主的表面活性劑:EFTOP EF301,EF303,EF352(Tochem Products Co.,Ltd.),MEGAFACE F171,F173(Dainippon Ink & Chem.,Inc.)FLUORAD FC430,FC431(Sumitomo 3M),Asahi guardAG710,Surflon S-382,SC101,SC102,SC103,SC104,SC105,SC106(Asahi Glass Co.,Ltd.等);其它以矽酮為主的表面活性劑如有機矽氧烷聚合物KP341(Shin-Etsu Chemical Co.,Ltd.)等。The surfactant is not particularly limited and includes, for example, a nonionic surfactant: polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl group Ether, polyoxyethylene oleyl ether, etc.; polyoxyethylene alkyl allyl ethers such as polyoxyethylene nonylphenol ether; polyoxyethylene-polyoxypropylene block copolymers; polyoxyethylene sorbitan fatty acid esters Such as sorbitol monolaurate, sorbitol monopalmitate, sorbitol monostearate, sorbitan monooleate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitol trioleate Ester, polyoxyethylene sorbitan tristearate, etc.; fluorine-based surfactants: EFTOP EF301, EF303, EF352 (Tochem Products Co., Ltd.), MEGAFACE F171, F173 (Dainippon Ink & Chem., Inc.) FLUORAD FC430, FC431 (Sumitomo 3M), Asahi guard AG710, Surflon S-382, SC101, SC102, SC103, SC104, SC105, SC106 (Asahi Glass Co., Ltd., etc.); other anthrone-based surfaces An active agent such as an organic siloxane polymer KP341 (Shin-Etsu Chemical Co., Ltd.) or the like.

基於用於形成矽氧層的組合物的總量,可以包括量為0.001wt%至10wt%的表面活性劑。在該範圍內,溶液的分散度、同時層的厚度均勻性以及填充性能得到改善。The surfactant may be included in an amount of from 0.001% by weight to 10% by weight based on the total amount of the composition for forming the siloxane layer. Within this range, the dispersion of the solution, the uniformity of thickness of the layers at the same time, and the filling property are improved.

用於形成矽氧層的組合物可以為如下般的溶液,其中氫化聚矽氮烷和/或氫化聚矽氧矽氮烷和其他成分係溶於溶劑中。The composition for forming the ruthenium oxide layer may be a solution in which hydrogenated polyazane and/or hydrogenated polyoxazane and other components are dissolved in a solvent.

溶劑沒有特別限定,只要能夠溶解這些成分,但可以包括例如芳族烴類如二甲苯等或醚類如二丁醚等。The solvent is not particularly limited as long as it can dissolve these components, but may include, for example, an aromatic hydrocarbon such as xylene or the like, or an ether such as dibutyl ether.

基於用於形成矽氧層的組合物的總量,除了上述成分外,可以包括溶劑作為平衡。Based on the total amount of the composition for forming the ruthenium oxide layer, a solvent may be included as an equilibrium in addition to the above components.

製備除去了高分子微粒的包括氫化聚矽氮烷和/或氫化聚矽氧矽氮烷的用於形成矽氧層的組合物的方法包括:將鹵代矽烷化合物與溶劑混合,並對其進行共氨解以合成氫化聚矽氮烷或氫化聚矽氧矽氮烷,由此形成包括氫化聚矽氮烷或氫化聚矽氧矽氮烷的產物溶液;向該產物溶液中加入C4至C10烷烴、C4至C10環烷烴、C4至C10烯烴、C4至C10環烯烴、十氫化萘、四氫化萘、對異丙基甲苯、對薄荷烷、α-蒎烯、或其等之至少一種的組合中的額外溶劑,以析出不溶性沉澱物;以及除去析出的不溶性沉澱物。A method for preparing a composition for forming a ruthenium oxide layer comprising a hydrogenated polyazane and/or a hydrogenated polyoxazane, which removes polymer microparticles, comprises: mixing a halogenated decane compound with a solvent, and performing the same Co-ammonia hydrolysis to synthesize hydrogenated polyazane or hydrogenated polyoxazane, thereby forming a product solution comprising a hydrogenated polyazane or a hydrogenated polyoxazane; adding a C4 to C10 alkane to the product solution a combination of at least one of a C4 to C10 cycloalkane, a C4 to C10 olefin, a C4 to C10 cycloalkene, decalin, tetrahydronaphthalene, p-isopropyltoluene, p-menthane, alpha-pinene, or the like. An additional solvent to precipitate insoluble precipitates; and to remove precipitated insoluble precipitates.

由該方法製備的用於形成矽氧層的組合物溶液除去了高分子氫化聚矽氮烷和/或氫化聚矽氧矽氮烷,因此用於形成矽氧層的組合物溶液中的液體中微粒數量的範圍可以在0至100/cc。The composition solution for forming the ruthenium oxide layer prepared by the method removes the polymer hydrogenated polyazane and/or the hydrogenated polyoxazane, and thus is used in the liquid in the composition solution for forming the ruthenium oxide layer. The number of particles can range from 0 to 100/cc.

隨後加入至用於形成矽氧層的組合物中的額外溶劑用於析出高分子氫化聚矽氮烷和/或氫化聚矽氧矽氮烷,並且在不利於形成矽氧層時可以在之後藉由蒸發除去。The additional solvent added to the composition for forming the ruthenium oxide layer is then used to precipitate the polymer hydrogenated polyazane and/or the hydrogenated polyoxazane, and may be borrowed later when it is disadvantageous for forming the ruthenium layer. Removed by evaporation.

額外溶劑可以選自例如正辛烷、環己烷、正己烷、對薄荷烷、α-蒎烯、正戊烷、正庚烷、或其等之組合。The additional solvent may be selected, for example, from n-octane, cyclohexane, n-hexane, p-menthane, alpha-pinene, n-pentane, n-heptane, or combinations thereof.

由於額外溶劑選擇性地析出高分子氫化聚矽氮烷和/或氫化聚矽氧矽氮烷,所以可以藉由例如濾器過濾而除去高分子微粒。當高分子微粒被除去時,可以減少矽氧層的缺陷。Since the polymer hydrogenated polyazide and/or the hydrogenated polyoxazane are selectively precipitated by the additional solvent, the polymer fine particles can be removed by, for example, filtration. When the polymer particles are removed, the defects of the silicon oxide layer can be reduced.

(待析出並分離之)高分子氫化聚矽氮烷和/或氫化聚矽氧矽氮烷的分子量範圍能夠藉由改變額外溶劑的添加量來控制。優選地,所述溶液中包括的溶劑(在加入額外溶劑之前)相對於該額外溶劑的重量比為約1:1至約1:30。例如,混合比可為約1:5,約1:8,約1:15等。在這種情況下,藉由增加額外溶劑的量,高分子氫化聚矽氮烷和/或氫化聚矽氧矽氮烷的析出量會增加,並且高分子氫化聚矽氮烷(保留在溶液中)和/或氫化聚矽氧矽氮烷的重量平均分子量會降低。The molecular weight range of the polymer hydrogenated polyazane and/or hydrogenated polyoxazepine to be precipitated and separated can be controlled by changing the amount of additional solvent added. Preferably, the weight ratio of the solvent (before adding the additional solvent) to the additional solvent included in the solution is from about 1:1 to about 1:30. For example, the mixing ratio may be about 1:5, about 1:8, about 1:15, and the like. In this case, by increasing the amount of additional solvent, the amount of precipitation of the polymer hydrogenated polyazane and/or hydrogenated polyoxazane will increase, and the polymer hydrogenated polyazane will remain in the solution. And/or the weight average molecular weight of the hydrogenated polyoxazepine is reduced.

為了除去析出的具有特定尺寸或更大的不溶性微粒,可以控制濾器的孔徑。例如,可使用孔徑約為0.01至0.2μm的濾器以濾出並除去尺寸大於該孔徑的微粒。In order to remove precipitated insoluble particles of a specific size or larger, the pore size of the filter can be controlled. For example, a filter having a pore size of about 0.01 to 0.2 μm can be used to filter out and remove particles having a size larger than the pore size.

可以藉由利用根據本發明的任一實施方式的用於形成矽氧層的組合物來製造減少缺陷的矽氧層,並且所獲得的矽氧層具有小於或等於約1000個/8英寸晶圓之量的缺陷(尺寸小於或等於約5μm)。The defect reducing germanium layer can be fabricated by utilizing a composition for forming a germanium oxide layer according to any of the embodiments of the present invention, and the obtained germanium oxide layer has a wafer of less than or equal to about 1000/8 inch. The amount of defects (size less than or equal to about 5 μm).

所述矽氧層可以不受限於方法,而可以藉由任何已知的方法製造。The silicon oxide layer may not be limited to the method, but may be produced by any known method.

例如,可以藉由用上述用於形成矽氧絕緣層的組合物塗覆裝置基板(如半導體和液晶),乾燥該基板,以及在200℃或更高溫度的包括水蒸氣的氣氛中使其固化而形成矽氧層。For example, the substrate can be dried by coating the device substrate (such as a semiconductor and a liquid crystal) with the composition for forming a silicon oxide insulating layer described above, and cured in an atmosphere including water vapor at 200 ° C or higher. The formation of a silicon oxide layer.

以下實施例更加詳細地舉例說明了本發明。然而,應當理解本發明不受限於這些實施例。The following examples illustrate the invention in more detail. However, it should be understood that the invention is not limited to the embodiments.

[實施例][Examples]

測量從以下實施例1至5和比較例1至5獲得的每種聚矽氮烷溶液或聚矽氧矽氮烷溶液對其液體中微粒的數量、氧含量、重量平均分子量和高分子成分,並且結果如下表1中所示。測量裝置如下:The amount, the oxygen content, the weight average molecular weight, and the polymer component of the particles in the liquid of each of the polyazirane solution or the polyoxazolidine solution obtained from the following Examples 1 to 5 and Comparative Examples 1 to 5 were measured. And the results are shown in Table 1 below. The measuring device is as follows:

- 液體中微粒:由Rion製造;液體中微粒感測器‧計數器KS-42BF- Particles in liquid: manufactured by Rion; particle sensor in liquid ‧ counter KS-42BF

- 氧含量:由Thermo Fisher Scientific Inc製造;FlashEA 1112- Oxygen content: manufactured by Thermo Fisher Scientific Inc; FlashEA 1112

- 重量平均分子量和高分子成分:GPC(由Waters製造);HPLC泵1515,RI檢測器2414(由Shodex製造);KF801,802,803- Weight average molecular weight and polymer composition: GPC (manufactured by Waters); HPLC pump 1515, RI detector 2414 (manufactured by Shodex); KF801, 802, 803

實施例1Example 1

將容量為2L並安裝了攪拌器和溫度控制器的反應器內部用乾燥氮氣置換。將1500g的乾燥吡啶注入反應器中並將溫度保持在5℃。將100g二氯矽烷在1小時內緩慢注入。攪拌下將70g氨在3小時內緩慢注入。隨後注入乾燥氮氣達30分鐘,並除去反應器中殘餘的氨。在乾燥氮氣氣氛下藉由1μm TEFLON(特氟龍)(四氟乙烯)濾器過濾所獲得的白色漿狀產物,得到1000g濾液。向其中加入1000g乾燥二甲苯,然後藉由共重複3次使用旋轉蒸發儀以用二甲苯取代吡啶的操作,將固體濃度調節至20 wt%,並用孔徑為0.1μm的TEFLON(四氟乙烯)濾器過濾,得到氫化聚矽氮烷溶液。The inside of the reactor having a capacity of 2 L and equipped with a stirrer and a temperature controller was replaced with dry nitrogen. 1500 g of dry pyridine was injected into the reactor and the temperature was maintained at 5 °C. 100 g of dichloromethane was slowly injected over 1 hour. 70 g of ammonia was slowly injected over 3 hours with stirring. Dry nitrogen was then injected for 30 minutes and the residual ammonia in the reactor was removed. The obtained white syrupy product was filtered through a 1 m TEFLON (tetrafluoroethylene) filter under a dry nitrogen atmosphere to give 1000 g of filtrate. 1000 g of dry xylene was added thereto, and then the solid concentration was adjusted to 20 wt% by using a rotary evaporator to replace the pyridine with xylene, and a TEFLON (tetrafluoroethylene) filter having a pore diameter of 0.1 μm was used. Filtration gave a hydrogenated polyazane solution.

將容量為1L並安裝了攪拌器的反應器內部用乾燥氮氣置換。室溫下攪拌的同時,將100g所獲得的氫化聚矽氮烷溶液注入該反應器中並將800g乾燥正辛烷在30分鐘內緩慢注入。停止攪拌並靜置3小時。用孔徑為0.1μm的TEFLON(四氟乙烯)濾器過濾。藉由共重複3次使用旋轉蒸發儀除去正辛烷並以二甲苯取代的操作,將固體濃度調節至20 wt%,然後用孔徑為0.02μm的TEFLON(四氟乙烯)濾器過濾。所獲得的氫化聚矽氮烷溶液折算為聚苯乙烯時的重量平均分子量約為1700,並且觀察到高於或等於50000的高分子區域中的峰值對應於約0.02wt%的濃度。溶液中尺寸為0.2μm或更大的液體中微粒的數量為約5.2/cc。The inside of the reactor having a capacity of 1 L and equipped with a stirrer was replaced with dry nitrogen. While stirring at room temperature, 100 g of the obtained hydrogenated polyazane solution was injected into the reactor and 800 g of dry n-octane was slowly injected over 30 minutes. Stirring was stopped and allowed to stand for 3 hours. It was filtered through a TEFLON (tetrafluoroethylene) filter having a pore size of 0.1 μm. The solid concentration was adjusted to 20 wt% by repeating the operation of removing n-octane by a rotary evaporator and replacing it with xylene, and then filtering with a TEFLON (tetrafluoroethylene) filter having a pore diameter of 0.02 μm. The weight average molecular weight of the obtained hydrogenated polyazane solution converted to polystyrene was about 1,700, and it was observed that the peak in the polymer region of higher than or equal to 50,000 corresponds to a concentration of about 0.02% by weight. The amount of particles in the liquid having a size of 0.2 μm or more in the solution was about 5.2 / cc.

實施例2Example 2

將容量為1L並安裝了攪拌器的反應器內部用乾燥氮氣置換。室溫下攪拌的同時,將100g從實施例1獲得的氫化聚矽氮烷溶液注入該反應器中並將600g乾燥環己烷在30分鐘內緩慢注入。停止攪拌並靜置3小時。用孔徑為0.1μm的TEFLON(四氟乙烯)濾器過濾。重複3次使用旋轉蒸發儀除去環己烷並以二甲苯取代的操作,以將固體濃度調節至20 wt%,並用孔徑為0.02μm的TEFLON(四氟乙烯)濾器過濾。所獲得的氫化聚矽氮烷溶液折算為聚苯乙烯時的重量平均分子量約為1700,觀察到50000或更高的高分子區域的峰值,對應於約0.02wt%的濃度。溶液中尺寸大於或等於0.2μm的液體中微粒的數量為約3.8/cc。The inside of the reactor having a capacity of 1 L and equipped with a stirrer was replaced with dry nitrogen. While stirring at room temperature, 100 g of the hydrogenated polyazane solution obtained in Example 1 was injected into the reactor and 600 g of dry cyclohexane was slowly injected over 30 minutes. Stirring was stopped and allowed to stand for 3 hours. It was filtered through a TEFLON (tetrafluoroethylene) filter having a pore size of 0.1 μm. The operation of removing cyclohexane and replacing it with xylene using a rotary evaporator was repeated 3 times to adjust the solid concentration to 20 wt%, and filtered with a TEFLON (tetrafluoroethylene) filter having a pore diameter of 0.02 μm. The weight average molecular weight of the obtained hydrogenated polyazirane solution converted to polystyrene was about 1,700, and a peak of a polymer region of 50,000 or more was observed, corresponding to a concentration of about 0.02% by weight. The amount of particles in the liquid having a size greater than or equal to 0.2 μm in the solution was about 3.8/cc.

實施例3Example 3

將容量為2L並安裝了攪拌器和溫度控制器的反應器內部用乾燥氮氣置換。將1500g的乾燥吡啶注入反應器並將溫度保持在5℃。將100g二氯矽烷在1小時內緩慢注入。攪拌下將70g氨在3小時內緩慢注入。隨後注入乾燥氮氣達30分鐘,並除去反應器中殘餘的氨。在乾燥氮氣氣氛下使用1μmTEFLON(四氟乙烯)濾器過濾所獲得的白色漿狀產物,得到1000g濾液。向其中加入1000g乾燥二甲苯,然後藉由共重複3次使用旋轉蒸發儀用溶液中的二甲苯取代吡啶的操作,將固體濃度調節至20 wt%,用孔徑為0.1μm的TEFLON(四氟乙烯)濾器過濾。The inside of the reactor having a capacity of 2 L and equipped with a stirrer and a temperature controller was replaced with dry nitrogen. 1500 g of dry pyridine was injected into the reactor and the temperature was maintained at 5 °C. 100 g of dichloromethane was slowly injected over 1 hour. 70 g of ammonia was slowly injected over 3 hours with stirring. Dry nitrogen was then injected for 30 minutes and the residual ammonia in the reactor was removed. The obtained white slurry product was filtered using a 1 m TEFLON (tetrafluoroethylene) filter under a dry nitrogen atmosphere to obtain 1000 g of filtrate. 1000 g of dry xylene was added thereto, and then the solid concentration was adjusted to 20 wt% by using a rotary evaporator to replace the pyridine with xylene in the solution by a total of 3 times, using TEFLON (tetrafluoroethylene) having a pore diameter of 0.1 μm. Filter filter.

在40℃下,將所獲得的氫化聚矽氮烷溶液在攪拌下保持240小時。用孔徑為0.02μm的TEFLON(四氟乙烯)濾器過濾在溶液中產生渾濁的氯化銨沉澱。The obtained hydrogenated polyoxazane solution was kept under stirring at 40 ° C for 240 hours. Filtration with a TEFLON (tetrafluoroethylene) filter having a pore size of 0.02 μm produced a cloudy ammonium chloride precipitate in the solution.

將容量為1L並安裝了攪拌器的反應器內部用乾燥氮氣置換。室溫下攪拌的同時,將100g所獲得的氫化聚矽氮烷溶液注入該反應器中並將700g乾燥正己烷在30分鐘內緩慢注入。停止攪拌並靜置3小時。用孔徑為0.1μm的TEFLON(四氟乙烯)濾器過濾。藉由重複3次使用旋轉蒸發儀除去正己烷並以二甲苯取代的操作,將固體濃度調節至20 wt%,並用孔徑為0.02μm的TEFLON(四氟乙烯)濾器過濾。所獲得的氫化聚矽氮烷溶液折算為聚苯乙烯時的重量平均分子量約為2100,觀察到高於或等於50000的高分子區域的峰值,對應於約0.02wt%的濃度。溶液中尺寸大於或等於0.2μm的液體中微粒的數量為約3.2/cc。The inside of the reactor having a capacity of 1 L and equipped with a stirrer was replaced with dry nitrogen. While stirring at room temperature, 100 g of the obtained hydrogenated polyazane solution was injected into the reactor and 700 g of dry n-hexane was slowly injected over 30 minutes. Stirring was stopped and allowed to stand for 3 hours. It was filtered through a TEFLON (tetrafluoroethylene) filter having a pore size of 0.1 μm. The solid concentration was adjusted to 20 wt% by repeating the operation of removing n-hexane using a rotary evaporator and substituting xylene, and filtering with a TEFLON (tetrafluoroethylene) filter having a pore diameter of 0.02 μm. The weight average molecular weight of the obtained hydrogenated polyazirane solution converted to polystyrene was about 2,100, and a peak of a polymer region higher than or equal to 50,000 was observed, corresponding to a concentration of about 0.02% by weight. The amount of particles in the liquid having a size greater than or equal to 0.2 μm in the solution was about 3.2/cc.

實施例4Example 4

將容量為2L並安裝了攪拌器和溫度控制器的反應器內部用乾燥氮氣置換。注入1500g的乾燥吡啶與0.6g純水並且充分混合,然後引入反應器中並將溫度保持在20℃。將100g二氯矽烷在1小時內緩慢注入。攪拌下將70g氨在3小時內緩慢注入。隨後注入乾燥氮氣達30分鐘,並除去反應器中殘餘的氨。在乾燥氮氣氣氛下使用1μm TEFLON(四氟乙烯)濾器過濾所獲得的白色漿狀產物,得到1000g濾液。向其中加入1000g乾燥二甲苯,然後藉由共重複3次使用旋轉蒸發儀用溶劑中的二丁醚取代吡啶的操作,將固體濃度調節至20 wt%,用孔徑為0.1μm的TEFLON(四氟乙烯)濾器過濾。所獲得的氫化聚矽氧矽氮烷溶液的氧含量為0.2%,並且重量平均分子量為4300,而且在高於或等於50000的高分子區域觀察到峰值。The inside of the reactor having a capacity of 2 L and equipped with a stirrer and a temperature controller was replaced with dry nitrogen. 1500 g of dry pyridine was injected with 0.6 g of pure water and thoroughly mixed, and then introduced into the reactor and the temperature was maintained at 20 °C. 100 g of dichloromethane was slowly injected over 1 hour. 70 g of ammonia was slowly injected over 3 hours with stirring. Dry nitrogen was then injected for 30 minutes and the residual ammonia in the reactor was removed. The obtained white slurry product was filtered using a 1 m TEFLON (tetrafluoroethylene) filter under a dry nitrogen atmosphere to obtain 1000 g of filtrate. 1000 g of dry xylene was added thereto, and then the solid concentration was adjusted to 20 wt% by using a rotary evaporator to replace pyridine with dibutyl ether in a solvent, and TEFLON (tetrafluoroethylene) having a pore diameter of 0.1 μm was used. Ethylene) filter filtration. The obtained hydrogenated polyxamidine solution had an oxygen content of 0.2% and a weight average molecular weight of 4,300, and a peak was observed in a polymer region of 50,000 or higher.

將所獲得的氫化聚矽氧矽氮烷溶液引入容量為5L的不銹鋼罐中,並且其內部充分置換為乾燥氮氣並施加1 kg/cm2G的壓力。在-10℃的冷凍箱中陳化10小時以上,使用孔徑為0.02μm的TEFLON(四氟乙烯)濾器過濾。所獲得的氫化聚矽氧矽氮烷溶液的重量平均分子量約為4400,並且在高於或等於50000的高分子區域觀察到峰值。The obtained hydrogenated polyxaazepine solution was introduced into a stainless steel tank having a capacity of 5 L, and the inside thereof was sufficiently replaced with dry nitrogen gas and a pressure of 1 kg/cm 2 G was applied. It was aged for 10 hours or more in a freezer at -10 ° C, and filtered using a TEFLON (tetrafluoroethylene) filter having a pore diameter of 0.02 μm. The obtained hydrogenated polyxaazepine solution had a weight average molecular weight of about 4,400, and a peak was observed in a polymer region of 50,000 or higher.

將容量為1L並安裝了攪拌器的反應器內部用乾燥氮氣置換。室溫下攪拌的同時,將100g所獲得的氫化聚矽氧矽氮烷溶液注入反應器中並將1000g乾燥對薄荷烷在30分鐘內緩慢注入。停止攪拌並靜置3小時。用孔徑為0.1μm的TEFLON(四氟乙烯)濾器過濾。藉由總共重複3次使用旋轉蒸發儀除去對薄荷烷並以二甲苯取代的操作,將固體濃度調節至20 wt%,並用孔徑為0.02μm的TEFLON(四氟乙烯)濾器過濾。所獲得的氫化聚矽氧矽氮烷溶液折算為聚苯乙烯時的重量平均分子量為約4200,觀察到高於或等於50000的高分子區域的峰值,對應於約0.04wt%的濃度。溶液中尺寸大於或等於0.2μm的液體中微粒的數量為約2.1/cc。The inside of the reactor having a capacity of 1 L and equipped with a stirrer was replaced with dry nitrogen. While stirring at room temperature, 100 g of the obtained hydrogenated polyxamidine solution was injected into the reactor and 1000 g of dry p-menthane was slowly injected over 30 minutes. Stirring was stopped and allowed to stand for 3 hours. It was filtered through a TEFLON (tetrafluoroethylene) filter having a pore size of 0.1 μm. The solid concentration was adjusted to 20 wt% by a procedure in which the cyclohexane was removed and replaced with xylene using a rotary evaporator for a total of three times, and filtered with a TEFLON (tetrafluoroethylene) filter having a pore diameter of 0.02 μm. The weight average molecular weight of the obtained hydrogenated polyximezepine solution converted to polystyrene was about 4,200, and a peak of a polymer region higher than or equal to 50,000 was observed, corresponding to a concentration of about 0.04% by weight. The amount of particles in the liquid having a size greater than or equal to 0.2 μm in the solution was about 2.1/cc.

實施例5Example 5

將容量為2L並安裝了攪拌器和溫度控制器的反應器內部用乾燥氮氣置換。注入1500g的乾燥吡啶與0.6g純水並充分混合,然後引入反應器中並將溫度保持在20℃。將100g二氯矽烷在1小時內緩慢注入。攪拌下將70g氨在3小時內緩慢注入。隨後注入乾燥氮氣達30分鐘,並除去反應器中殘餘的氨。在乾燥氮氣氣氛下使用1μm TEFLON(四氟乙烯)濾器過濾所獲得的白色漿狀產物,得到1000g濾液。向其中加入1000g乾燥二甲苯,然後藉由共重複3次使用旋轉蒸發儀用溶劑中的二丁醚取代吡啶的操作,將固體濃度調節至20wt%,用孔徑為0.1μm的TEFLON(四氟乙烯)濾器過濾。所獲得的氫化聚矽氧矽氮烷溶液的氧含量為0.2wt%,並且重量平均分子量為4300,而且在高於或等於50000的高分子區域觀察到峰值。The inside of the reactor having a capacity of 2 L and equipped with a stirrer and a temperature controller was replaced with dry nitrogen. 1500 g of dry pyridine was injected with 0.6 g of pure water and thoroughly mixed, and then introduced into the reactor and the temperature was maintained at 20 °C. 100 g of dichloromethane was slowly injected over 1 hour. 70 g of ammonia was slowly injected over 3 hours with stirring. Dry nitrogen was then injected for 30 minutes and the residual ammonia in the reactor was removed. The obtained white slurry product was filtered using a 1 m TEFLON (tetrafluoroethylene) filter under a dry nitrogen atmosphere to obtain 1000 g of filtrate. 1000 g of dry xylene was added thereto, and then the solid concentration was adjusted to 20 wt% by using a rotary evaporator to replace pyridine with dibutyl ether in a solvent, and TEFLON (tetrafluoroethylene) having a pore diameter of 0.1 μm was used. Filter filter. The obtained hydrogenated polyxamidine solution had an oxygen content of 0.2% by weight and a weight average molecular weight of 4,300, and a peak was observed in a polymer region of 50,000 or higher.

將所獲得的氫化聚矽氧矽氮烷溶液引入容量為5L的不銹鋼罐中,其內部充分置換為乾燥氮氣並施加1 kg/cm2G的壓力。在-10℃的冷凍箱中陳化10小時以上,使用孔徑為0.02μm的TEFLON(四氟乙烯)濾器過濾。氫化聚矽氧矽氮烷溶液的重量平均分子量約為4400,並且在高於或等於50000的高分子區域觀察到峰值。The obtained hydrogenated polyxaazepine solution was introduced into a stainless steel tank having a capacity of 5 L, and the inside was sufficiently replaced with dry nitrogen gas and a pressure of 1 kg/cm 2 G was applied. It was aged for 10 hours or more in a freezer at -10 ° C, and filtered using a TEFLON (tetrafluoroethylene) filter having a pore diameter of 0.02 μm. The weight average molecular weight of the hydrogenated polyoxazane solution was about 4,400, and a peak was observed in a polymer region of 50,000 or higher.

將容量為1L並安裝了攪拌器的反應器內部用乾燥氮氣置換。室溫下攪拌的同時,將100g所獲得的氫化聚矽氧矽氮烷溶液注入反應器中並將900g乾燥α-蒎烯在30分鐘內緩慢注入。停止攪拌並靜置3小時。用孔徑為0.1μm的TEFLON(四氟乙烯)濾器過濾。藉由總共重複3次使用旋轉蒸發儀除去α-蒎烯並以二甲苯取代的操作,將固體濃度調節至20 wt%,並用孔徑為0.02μm的TEFLON(四氟乙烯)濾器過濾。所獲得的氫化聚矽氧矽氮烷溶液折算為聚苯乙烯時的重量平均分子量為約4500,觀察到高於或等於50000的高分子區域的峰值,對應於約0.04wt%的濃度。溶液中尺寸大於或等於0.2μm的液體中微粒的數量為約4.1/cc。The inside of the reactor having a capacity of 1 L and equipped with a stirrer was replaced with dry nitrogen. While stirring at room temperature, 100 g of the obtained hydrogenated polyxamidine solution was injected into the reactor and 900 g of dry α-pinene was slowly injected over 30 minutes. Stirring was stopped and allowed to stand for 3 hours. It was filtered through a TEFLON (tetrafluoroethylene) filter having a pore size of 0.1 μm. The solid concentration was adjusted to 20 wt% by a total of three repetitions of the use of a rotary evaporator to remove α-pinene and replaced with xylene, and filtered through a TEFLON (tetrafluoroethylene) filter having a pore size of 0.02 μm. The weight average molecular weight of the obtained hydrogenated polyximezepine solution converted to polystyrene was about 4500, and a peak of a polymer region higher than or equal to 50,000 was observed, corresponding to a concentration of about 0.04% by weight. The amount of particles in the liquid having a size greater than or equal to 0.2 μm in the solution was about 4.1/cc.

比較例1Comparative example 1

將容量為2L並安裝了攪拌器和溫度控制器的反應器內部用乾燥氮氣置換。將1500g的乾燥吡啶注入反應器中並將溫度保持在5℃。將100g二氯矽烷在1小時內緩慢注入。攪拌下將70g氨在3小時內緩慢注入。隨後注入乾燥氮氣達30分鐘,並除去反應器中殘餘的氨。在乾燥氮氣氣氛下使用1μm TEFLON(四氟乙烯)濾器過濾所獲得的白色漿狀產物,得到1000g濾液。The inside of the reactor having a capacity of 2 L and equipped with a stirrer and a temperature controller was replaced with dry nitrogen. 1500 g of dry pyridine was injected into the reactor and the temperature was maintained at 5 °C. 100 g of dichloromethane was slowly injected over 1 hour. 70 g of ammonia was slowly injected over 3 hours with stirring. Dry nitrogen was then injected for 30 minutes and the residual ammonia in the reactor was removed. The obtained white slurry product was filtered using a 1 m TEFLON (tetrafluoroethylene) filter under a dry nitrogen atmosphere to obtain 1000 g of filtrate.

向其中加入1000g乾燥二甲苯,然後藉由共重複3次使用旋轉蒸發儀用溶劑中的二甲苯取代吡啶的操作,將固體濃度調節至20wt%,用孔徑為0.1μm的TEFLON(四氟乙烯)濾器過濾。所獲得的氫化聚矽氮烷溶液折算為聚苯乙烯時的重量平均分子量為約1600,觀察到高於或等於50000的高分子區域的峰值,對應於約0.21wt%的濃度。溶液中尺寸大於或等於0.2μm的液體中微粒的數量為約1220/cc。1000 g of dry xylene was added thereto, and then the solid concentration was adjusted to 20 wt% by using a rotary evaporator to replace pyridine with xylene in a solvent, and TEFLON (tetrafluoroethylene) having a pore diameter of 0.1 μm was used. Filter filter. The weight average molecular weight of the obtained hydrogenated polyazirane solution converted to polystyrene was about 1600, and a peak of a polymer region higher than or equal to 50,000 was observed, corresponding to a concentration of about 0.21% by weight. The amount of particles in the liquid having a size greater than or equal to 0.2 μm in the solution was about 1220 / cc.

比較例2Comparative example 2

40℃下,將從比較例1獲得的氫化聚矽氮烷溶液在實施例1所述的條件下攪拌並保持240小時,並用孔徑為0.1μm的TEFLON(四氟乙烯)濾器過濾。所獲得的氫化聚矽氮烷溶液折算為聚苯乙烯時的重量平均分子量約為1800,觀察到高於或等於50000的高分子區域的峰值,對應於約0.28wt%的濃度。溶液中尺寸大於或等於0.2μm的液體中微粒的數量為約1460/cc。The hydrogenated polyoxazane solution obtained in Comparative Example 1 was stirred and maintained at 40 ° C for 240 hours under the conditions described in Example 1, and filtered through a TEFLON (tetrafluoroethylene) filter having a pore size of 0.1 μm. The weight average molecular weight of the obtained hydrogenated polyazane solution converted to polystyrene was about 1800, and a peak of a polymer region higher than or equal to 50,000 was observed, corresponding to a concentration of about 0.28 wt%. The amount of particles in the liquid having a size greater than or equal to 0.2 μm in the solution was about 1460/cc.

比較例3Comparative example 3

用孔徑為0.02μm的TEFLON(四氟乙烯)濾器過濾從比較例1獲得的氫化聚矽氮烷溶液。所獲得的氫化聚矽氮烷溶液折算為聚苯乙烯時的重量平均分子量約為1800,觀察到高於或等於50000的高分子區域的峰值,對應於約0.13wt%的濃度。溶液中尺寸大於或等於0.2μm的液體中微粒的數量約為960/cc。The hydrogenated polyazane solution obtained in Comparative Example 1 was filtered through a TEFLON (tetrafluoroethylene) filter having a pore size of 0.02 μm. The weight average molecular weight of the obtained hydrogenated polyazane solution converted to polystyrene was about 1800, and a peak of a polymer region higher than or equal to 50,000 was observed, corresponding to a concentration of about 0.13 wt%. The amount of particles in the liquid having a size greater than or equal to 0.2 μm in the solution was about 960/cc.

比較例4Comparative example 4

將容量為2L並安裝了攪拌器和溫度控制器的反應器內部用乾燥氮氣置換。注入1500g的乾燥吡啶與2.0g純水並引入反應器中並將溫度保持在5℃。將100g二氯矽烷在1小時內緩慢注入。攪拌下將70g氨在3小時內緩慢注入。隨後注入乾燥氮氣達30分鐘,並除去反應器中殘餘的氨。在乾燥氮氣氣氛下使用1μm TEFLON(四氟乙烯)濾器過濾所獲得的白色漿狀產物,得到1000g濾液。加入1000g乾燥二甲苯,然後藉由共重複3次使用旋轉蒸發儀用溶劑中的二丁醚取代吡啶的操作,將固體濃度調節至20 wt%,用孔徑為0.1μm的TEFLON(四氟乙烯)濾器過濾。所獲得的氫化聚矽氧矽氮烷溶液的氧含量為0.5wt%,折算為聚苯乙烯時的重量平均分子量為約2200,觀察到高於或等於50000的高分子區域的峰值,對應於約0.35wt%的濃度。氧含量為約3.5ppm。溶液中尺寸大於或等於0.2μm的液體中微粒的數量為約690/cc。The inside of the reactor having a capacity of 2 L and equipped with a stirrer and a temperature controller was replaced with dry nitrogen. 1500 g of dry pyridine was injected with 2.0 g of pure water and introduced into the reactor and the temperature was maintained at 5 °C. 100 g of dichloromethane was slowly injected over 1 hour. 70 g of ammonia was slowly injected over 3 hours with stirring. Dry nitrogen was then injected for 30 minutes and the residual ammonia in the reactor was removed. The obtained white slurry product was filtered using a 1 m TEFLON (tetrafluoroethylene) filter under a dry nitrogen atmosphere to obtain 1000 g of filtrate. 1000 g of dry xylene was added, and then the solid concentration was adjusted to 20 wt% by using a rotary evaporator to replace pyridine with dibutyl ether in a solvent, and TEFLON (tetrafluoroethylene) having a pore diameter of 0.1 μm was used. Filter filter. The obtained hydrogenated polyxanthracene solution has an oxygen content of 0.5% by weight, a weight average molecular weight of about 2200 when converted to polystyrene, and a peak of a polymer region of 50,000 or higher, corresponding to about A concentration of 0.35 wt%. The oxygen content was about 3.5 ppm. The amount of particles in the liquid having a size greater than or equal to 0.2 μm in the solution was about 690/cc.

比較例5Comparative Example 5

40℃下,將從比較例1獲得的氫化聚矽氮烷溶液在攪拌下保持240小時。然後用孔徑為0.02μm的TEFLON(四氟乙烯)濾器過濾在溶液中產生渾濁的氯化銨沉澱。氫化聚矽氧矽氮烷溶液的重量平均分子量為約2200,觀察到高於或等於50000的高分子區域的峰值,對應於約0.25wt%的濃度。溶液中尺寸大於或等於0.2μm的液體中微粒的數量為約740/cc。The hydrogenated polyazane solution obtained from Comparative Example 1 was kept at 240 ° C for 240 hours with stirring. Filtration of a cloudy ammonium chloride in the solution was then carried out using a TEFLON (tetrafluoroethylene) filter having a pore size of 0.02 μm. The weight average molecular weight of the hydrogenated polyoxazane solution was about 2,200, and a peak of a polymer region higher than or equal to 50,000 was observed, corresponding to a concentration of about 0.25 wt%. The amount of particles in the liquid having a size greater than or equal to 0.2 μm in the solution was about 740/cc.

第1圖為一曲線圖,其示出了聚矽氮烷和聚矽氧矽氮烷溶液在高靈敏度GPC(凝膠滲透色譜)上的測量結果。實線表示從比較例4獲得的聚矽氧矽氮烷溶液的結果;虛線表示從實施例3獲得的聚矽氮烷溶液的結果。證實了表明折算為聚苯乙烯時的重量平均分子量大於或等於50000的峰值在實施例3中消失。Fig. 1 is a graph showing the measurement results of a polyazoxide and a polyoxazolidine solution on a high sensitivity GPC (gel permeation chromatography). The solid line indicates the result of the polyximezepine solution obtained from Comparative Example 4; the broken line indicates the result of the polyazinone solution obtained in Example 3. It was confirmed that the peak indicating that the weight average molecular weight when converted to polystyrene was 50,000 or more disappeared in Example 3.

根據表1所示的結果,證實大於或等於50000的高分子成分在實施例1至5中被除去。具體地,比較例2中未除去高分子成分;相反,使用正辛烷析出不溶性物質的實施例1中除去了高分子成分。另外,實施例2藉由使用環己烷析出不溶性物質從藉由比較例1中的相同方式獲得的氫化聚矽氮烷中減少了高分子成分。在實施例3至5中,分別藉由使用正己烷、對薄荷烷和α-蒎烯析出不溶性物質而從聚矽氧矽氮烷溶液中有效地除去高分子成分。According to the results shown in Table 1, it was confirmed that the polymer component of 50,000 or more was removed in Examples 1 to 5. Specifically, in Comparative Example 2, the polymer component was not removed; on the contrary, in Example 1, in which the insoluble matter was precipitated using n-octane, the polymer component was removed. Further, in Example 2, the polymer component was reduced from the hydrogenated polyxane obtained in the same manner as in Comparative Example 1 by using the cyclohexane to precipitate an insoluble matter. In Examples 3 to 5, the polymer component was effectively removed from the polyxaazepine solution by using insoluble substances precipitated from n-hexane, p-menthane and α-pinene, respectively.

雖然藉由目前認為是實際的示例性實施方式來描述本發明,但應當理解,本發明並不受限於所揭示的實施方式,而且相反,本發明覆蓋所附權利要求的精神和範圍所包括的各種更改和等同替換方案。因此,前述實施方式應理解為是示例性的,而不以任何方式限制本發明。The present invention is described by way of example, and is not to be construed as limited Various changes and equivalent replacements. Therefore, the foregoing embodiments are to be considered as illustrative and not restrictive.

第1圖為曲線圖,示出了從實施例3和比較例4獲得的聚矽氮烷和矽氧矽氮烷(siloxazane)溶液在高靈敏度GPC(凝膠滲透色譜)上的測量結果。Fig. 1 is a graph showing the results of measurement of a polyoxazane and a siloxazane solution obtained from Example 3 and Comparative Example 4 on a high sensitivity GPC (gel permeation chromatography).

Claims (14)

一種用於形成矽氧層的組合物,包含:選自氫化聚矽氮烷、氫化聚矽氧矽氮烷(hydrogenated polysiloxazane)、以及其等之組合中的一種,其中,基於所述氫化聚矽氮烷和氫化聚矽氧矽氮烷的總量,重量平均分子量(折算為聚苯乙烯)大於或等於50000的氫化聚矽氮烷和氫化聚矽氧矽氮烷的總和的濃度範圍為小於或等於0.1wt%。 A composition for forming a ruthenium oxide layer, comprising: one selected from the group consisting of hydrogenated polyazane, hydrogenated polysiloxazane, and combinations thereof, wherein the hydrogenated poly The total amount of the azane and the hydrogenated polyxanthracene, the sum of the weight average molecular weight (converted to polystyrene) greater than or equal to 50,000, and the sum of the hydrogenated polyazane and the hydrogenated polyoxazane is less than or Equal to 0.1 wt%. 如申請專利範圍第1項之用於形成矽氧層的組合物,其中,基於所述氫化聚矽氮烷和氫化聚矽氧矽氮烷的總量,重量平均分子量(折算為聚苯乙烯)大於或等於50000的氫化聚矽氮烷和氫化聚矽氧矽氮烷的總和的濃度範圍為小於或等於0.05wt%。 The composition for forming a ruthenium oxide layer according to claim 1, wherein the weight average molecular weight (converted to polystyrene) is based on the total amount of the hydrogenated polyazide and the hydrogenated polyoxazane. The concentration of the sum of the hydrogenated polyazane and the hydrogenated polyoxazane greater than or equal to 50,000 is in the range of less than or equal to 0.05% by weight. 如申請專利範圍第1項之用於形成矽氧層的組合物,其中,所述用於形成矽氧層的組合物,在溶液中尺寸大於等於0.2μm的液體中微粒的數量為0至100/cc。 The composition for forming a layer of a ruthenium layer according to the first aspect of the invention, wherein the composition for forming a ruthenium layer has a number of particles of 0 to 100 in a liquid having a size of 0.2 μm or more in a solution. /cc. 如申請專利範圍第1項之用於形成矽氧層的組合物,其中,所述氫化聚矽氮烷或所述氫化聚矽氧矽氮烷包括由以下化學式1表示的部分: 其中,在化學式1中,R1至R3各自獨立地是氫、取代或未取代的C1至C30烷基、取代或未取代的C3至C30環烷基、取代或未取代的C6至C30芳基、取代或未取代的C7至C30芳烷基、取代或未取代的C1至C30雜烷基、取代或未取代的C2至C30雜環烷基、取代或未取代的C2至C30烯基、取代或未取代的烷氧基、取代或未取代的羰基、羥基、或其等之組合。 A composition for forming a layer of a ruthenium oxide according to the first aspect of the invention, wherein the hydrogenated polyazide or the hydrogenated polyoxazane includes a moiety represented by the following Chemical Formula 1: Wherein, in Chemical Formula 1, R 1 to R 3 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aromatic group. a substituted, unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, A substituted or unsubstituted alkoxy group, a substituted or unsubstituted carbonyl group, a hydroxyl group, or a combination thereof. 如申請專利範圍第4項之用於形成矽氧層的組合物,其中,所述氫化聚矽氧矽氮烷進一步包括由以下化學式2表示的部分: 其中,在化學式2中,R4至R7各自獨立地是氫、取代或未取代的C1至C30烷基、取代或未取代的C3至C30環烷基、取代或未取代的C6至C30芳基、取代或未取代的C7至C30芳烷基、取代或未取代的C1至C30雜烷基、取代或未取代的C2至C30雜環烷基、取代或未取代的C2至C30烯基、取代或未取代的烷氧基、取代或未取代的羰基、羥基、或其等之組合。 A composition for forming a layer of a ruthenium oxide according to the fourth aspect of the invention, wherein the hydrogenated polyxanthracene further comprises a moiety represented by the following Chemical Formula 2: Wherein, in Chemical Formula 2, R 4 to R 7 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aromatic group. a substituted, unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, A substituted or unsubstituted alkoxy group, a substituted or unsubstituted carbonyl group, a hydroxyl group, or a combination thereof. 如申請專利範圍第5項之用於形成矽氧層的組合物,其中,所述氫化聚矽氧矽氮烷在其末端包括由以下化學式3表示的部分,並且具有的氧含量為0.2wt%至3wt%,且基於Si-H鍵的總量,以15wt%至35wt%的量包括所述由以下化學式3表示的部分:<化學式3>*-SiH3A composition for forming a layer of a ruthenium oxide according to the fifth aspect of the invention, wherein the hydrogenated polyoxazepine includes a moiety represented by the following Chemical Formula 3 at its end, and has an oxygen content of 0.2% by weight. To 3 wt%, and based on the total amount of Si-H bonds, the portion represented by the following Chemical Formula 3 is included in an amount of 15 wt% to 35 wt%: <Chemical Formula 3>*-SiH 3 . 如申請專利範圍第1項之用於形成矽氧層的組合物,其中,所述氫化聚矽氮烷或所述氫化聚矽氧矽氮烷的重量平均分子量為1000至10000。 The composition for forming a layer of a ruthenium layer according to the first aspect of the invention, wherein the hydrogenated polyazide or the hydrogenated polyoxazane has a weight average molecular weight of from 1,000 to 10,000. 如申請專利範圍第1項之用於形成矽氧層的組合物,其中,所述氫化聚矽氮烷和所述氫化聚矽氧矽氮烷的總和為在0.1wt%至50wt%的範圍。 The composition for forming a ruthenium oxide layer according to the first aspect of the invention, wherein the sum of the hydrogenated polyazide and the hydrogenated polyxanthracene is in the range of 0.1% by weight to 50% by weight. 一種製造如申請專利範圍第1項所述之用於形成矽氧層的組合物的方法,包括:將鹵代矽烷化合物與溶劑混合,並對其進行共氨解(coammonolyzing)以合成氫化聚矽氮烷或氫化聚矽氧矽氮烷,由此形成包含所述氫化聚矽氮烷或所述氫化聚矽氧矽氮烷的產物溶液;向所述產物溶液中加入C4至C10烷烴、C4至C10環烷烴、C4至C10烯烴、C4至C10環烯烴、十氫化萘、四氫化萘、對異丙基甲苯、對薄荷烷、α-蒎烯、或其等之至少一種的組合的額外溶劑,以析出不溶性沉澱物;以及 除去所述析出的不溶性沉澱物。 A method for producing a composition for forming a layer of a ruthenium layer according to claim 1, comprising: mixing a halogenated decane compound with a solvent, and coammonolyzing it to synthesize a hydrogenated polyfluorene a nitrogen alkane or a hydrogenated polyoxazepine, thereby forming a product solution comprising the hydrogenated polyazide or the hydrogenated polyxaazepine; adding C4 to C10 alkanes, C4 to the product solution to An additional solvent of a combination of a C10 cycloalkane, a C4 to C10 olefin, a C4 to C10 cycloalkene, decalin, tetrahydronaphthalene, p-isopropyltoluene, p-menthane, alpha-pinene, or the like, To precipitate insoluble precipitates; The precipitated insoluble precipitate was removed. 如申請專利範圍第9項之方法,其中,在添加所述額外溶劑之前所述溶液中包含的溶劑與所述額外溶劑的重量比為在1:1至1:30的範圍內。 The method of claim 9, wherein the weight ratio of the solvent contained in the solution to the additional solvent before the addition of the additional solvent is in the range of 1:1 to 1:30. 如申請專利範圍第9項之方法,進一步包括在除去所述析出的不溶性沉澱物之後除去所述額外溶劑。 The method of claim 9, further comprising removing the additional solvent after removing the precipitated insoluble precipitate. 如申請專利範圍第9項之方法,其中,除去所述析出的不溶性沉澱物包括藉由孔徑為0.01至0.2μm的濾器過濾和除去所述析出的不溶性沉澱物。 The method of claim 9, wherein the removing the precipitated insoluble precipitate comprises filtering and removing the precipitated insoluble precipitate by a filter having a pore diameter of 0.01 to 0.2 μm. 一種矽氧層,所述矽氧層藉由利用如申請專利範圍第1至8中任一項之用於形成矽氧層的組合物製造,並且具有的尺寸小於或等於5μm的缺陷少於或等於1000個/8英寸晶圓。 An antimony layer produced by using the composition for forming a hafoxide layer according to any one of claims 1 to 8 and having a defect having a size of less than or equal to 5 μm or less Equal to 1000 / 8 inch wafer. 一種製造缺陷減少的矽氧層的方法,包括:將如申請專利範圍第1至8項中任一項之用於形成矽氧層的組合物塗覆在基板上;乾燥塗覆有所述用於形成矽氧層的組合物的所述基板;以及使其在包含高於或等於200℃的水蒸氣的氣氛中固化。 A method of manufacturing a defect-reduced oxygen layer, comprising: coating a composition for forming a layer of a silicon oxide layer according to any one of claims 1 to 8 on a substrate; drying and coating the composition The substrate of the composition forming the silicon oxide layer; and is cured in an atmosphere containing water vapor of 200 ° C or higher.
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