TWI560778B - Fin field-effect transistor structure and manufacturing process thereof - Google Patents

Fin field-effect transistor structure and manufacturing process thereof

Info

Publication number
TWI560778B
TWI560778B TW100109608A TW100109608A TWI560778B TW I560778 B TWI560778 B TW I560778B TW 100109608 A TW100109608 A TW 100109608A TW 100109608 A TW100109608 A TW 100109608A TW I560778 B TWI560778 B TW I560778B
Authority
TW
Taiwan
Prior art keywords
manufacturing process
effect transistor
transistor structure
fin field
fin
Prior art date
Application number
TW100109608A
Other languages
Chinese (zh)
Other versions
TW201239991A (en
Inventor
Teng Chun Tsai
chun yuan Wu
Chin Fu Lin
Chih Chien Liu
Chin Cheng Chien
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW100109608A priority Critical patent/TWI560778B/en
Publication of TW201239991A publication Critical patent/TW201239991A/en
Application granted granted Critical
Publication of TWI560778B publication Critical patent/TWI560778B/en

Links

TW100109608A 2011-03-21 2011-03-21 Fin field-effect transistor structure and manufacturing process thereof TWI560778B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100109608A TWI560778B (en) 2011-03-21 2011-03-21 Fin field-effect transistor structure and manufacturing process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100109608A TWI560778B (en) 2011-03-21 2011-03-21 Fin field-effect transistor structure and manufacturing process thereof

Publications (2)

Publication Number Publication Date
TW201239991A TW201239991A (en) 2012-10-01
TWI560778B true TWI560778B (en) 2016-12-01

Family

ID=47599677

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100109608A TWI560778B (en) 2011-03-21 2011-03-21 Fin field-effect transistor structure and manufacturing process thereof

Country Status (1)

Country Link
TW (1) TWI560778B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9799741B2 (en) 2015-12-16 2017-10-24 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and method for manufacturing the same
US10734233B2 (en) * 2018-02-22 2020-08-04 Globalfoundries Inc. FinFET with high-k spacer and self-aligned contact capping layer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6970372B1 (en) * 2004-06-29 2005-11-29 International Business Machines Corporation Dual gated finfet gain cell
TW200608604A (en) * 2004-08-27 2006-03-01 Taiwan Semiconductor Mfg Co Ltd Metal gate structure for MOS devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6970372B1 (en) * 2004-06-29 2005-11-29 International Business Machines Corporation Dual gated finfet gain cell
TW200608604A (en) * 2004-08-27 2006-03-01 Taiwan Semiconductor Mfg Co Ltd Metal gate structure for MOS devices

Also Published As

Publication number Publication date
TW201239991A (en) 2012-10-01

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