TWI560778B - Fin field-effect transistor structure and manufacturing process thereof - Google Patents
Fin field-effect transistor structure and manufacturing process thereofInfo
- Publication number
- TWI560778B TWI560778B TW100109608A TW100109608A TWI560778B TW I560778 B TWI560778 B TW I560778B TW 100109608 A TW100109608 A TW 100109608A TW 100109608 A TW100109608 A TW 100109608A TW I560778 B TWI560778 B TW I560778B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing process
- effect transistor
- transistor structure
- fin field
- fin
- Prior art date
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100109608A TWI560778B (en) | 2011-03-21 | 2011-03-21 | Fin field-effect transistor structure and manufacturing process thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100109608A TWI560778B (en) | 2011-03-21 | 2011-03-21 | Fin field-effect transistor structure and manufacturing process thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201239991A TW201239991A (en) | 2012-10-01 |
TWI560778B true TWI560778B (en) | 2016-12-01 |
Family
ID=47599677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100109608A TWI560778B (en) | 2011-03-21 | 2011-03-21 | Fin field-effect transistor structure and manufacturing process thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI560778B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9799741B2 (en) | 2015-12-16 | 2017-10-24 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and method for manufacturing the same |
US10734233B2 (en) * | 2018-02-22 | 2020-08-04 | Globalfoundries Inc. | FinFET with high-k spacer and self-aligned contact capping layer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6970372B1 (en) * | 2004-06-29 | 2005-11-29 | International Business Machines Corporation | Dual gated finfet gain cell |
TW200608604A (en) * | 2004-08-27 | 2006-03-01 | Taiwan Semiconductor Mfg Co Ltd | Metal gate structure for MOS devices |
-
2011
- 2011-03-21 TW TW100109608A patent/TWI560778B/en active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6970372B1 (en) * | 2004-06-29 | 2005-11-29 | International Business Machines Corporation | Dual gated finfet gain cell |
TW200608604A (en) * | 2004-08-27 | 2006-03-01 | Taiwan Semiconductor Mfg Co Ltd | Metal gate structure for MOS devices |
Also Published As
Publication number | Publication date |
---|---|
TW201239991A (en) | 2012-10-01 |
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