TWI559319B - Memory device detection device and detection method thereof - Google Patents

Memory device detection device and detection method thereof Download PDF

Info

Publication number
TWI559319B
TWI559319B TW103127184A TW103127184A TWI559319B TW I559319 B TWI559319 B TW I559319B TW 103127184 A TW103127184 A TW 103127184A TW 103127184 A TW103127184 A TW 103127184A TW I559319 B TWI559319 B TW I559319B
Authority
TW
Taiwan
Prior art keywords
detection
memory
detection data
data
memory elements
Prior art date
Application number
TW103127184A
Other languages
Chinese (zh)
Other versions
TW201606786A (en
Inventor
sheng-xun Lin
Bo-Yu Chen
Rui-Lin Yan
Wei-Jia Su
Zheng-Zhong Ye
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW103127184A priority Critical patent/TWI559319B/en
Publication of TW201606786A publication Critical patent/TW201606786A/en
Application granted granted Critical
Publication of TWI559319B publication Critical patent/TWI559319B/en

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)

Description

記憶元件之檢測裝置及其檢測方法 Memory element detecting device and detecting method thereof

本發明係關於一種檢測裝置及其檢測方法,其係尤指一種記憶元件之檢測裝置及其檢測方法。 The present invention relates to a detecting device and a detecting method thereof, and more particularly to a detecting device for a memory element and a detecting method thereof.

記憶元件(Memory cell)在成為商品之前需進行品質之檢測,以確保記憶元件的可靠性與生產率。一般而言,記憶元件之檢測方式是先對需檢測之記憶元件寫入檢測資料,寫入完成後再讀取出所寫入之檢測資料,並比對寫入之檢測資料與讀取出之檢測資料是否相同,若兩資料不相同,則判斷此記憶元件具有缺陷,即無法完整地存取資料。 The memory cell needs to be tested for quality before it becomes a product to ensure the reliability and productivity of the memory device. Generally speaking, the detection method of the memory component is to first write the detection data to the memory component to be detected, and then read the written detection data after the writing is completed, and compare the written detection data with the read detection. Whether the data is the same, if the two materials are different, it is judged that the memory element has a defect, that is, the data cannot be completely accessed.

然而,習知之檢測方式其寫入、讀取及比對檢測資料之步驟皆由主機所控制,即對一個記憶元件寫入檢測資料時,是藉由主機控制儲存控制器而寫入檢測資料至一個記憶元件,當讀取檢測資料時,是藉由主機控制儲存控制器而讀取此記憶元件所儲存之檢測資料,而比對寫入之檢測資料與讀取出之檢測資料時,亦由主機進行比對。 However, the conventional detection method of the steps of writing, reading and comparing the detection data is controlled by the host, that is, when the detection data is written to a memory component, the detection data is written by the host controlling the storage controller to A memory component, when reading the detection data, reads the detection data stored by the memory component by the host controlling the storage controller, and compares the written detection data with the read detection data, The host compares.

再者,記憶元件實際應用為記憶裝置時需要搭配儲存控制器以其內部透過韌體實現之邏輯對記憶元件內之紀錄單元進行管理(記憶單元管理機制),以進行邏輯位置及實體位置轉換、均勻寫入等功能。單純以前述方式對記憶元件進行檢測無法達到確認產品 功能正確性之目的。 Furthermore, when the memory device is actually used as a memory device, it is required to manage the recording unit in the memory element (memory unit management mechanism) with the logic realized by the internal memory through the firmware to perform logical position and physical position conversion, Even write and other functions. Simply detecting the memory component in the manner described above cannot achieve the confirmation product. The purpose of functional correctness.

由上述可知,由於習知記憶元件之檢測方式對每一個記憶元件進行檢測(寫入、讀取及比對)時,皆必需藉由主機進行控制,因此若同時需要對複數儲存控制器所連接的複數記憶元件進行檢測時,主機必需同時並不斷地控制多個儲存控制器,所以習知之檢測方式會佔據連接於主機與該些儲存控制器之間線路過多的資源,且習知之檢測方式極為耗時。 It can be seen from the above that since the detection method of the conventional memory element detects (writes, reads, and compares) each memory element, it must be controlled by the host, so if it is necessary to connect to the multiple storage controller at the same time, When the complex memory component is detected, the host must control multiple storage controllers at the same time and continuously, so the conventional detection method occupies too much resources connected between the host and the storage controllers, and the conventional detection method is extremely time consuming.

因此,本發明針對上述問題提供了一種記憶元件之檢測裝置及其檢測方法,始可解決上述的問題。 Accordingly, the present invention has been made in view of the above problems, and provides a memory element detecting apparatus and a detecting method thereof, which can solve the above problems.

本發明之目的之一,係提供一種記憶元件之檢測裝置及其檢測方法,藉由一主機輸出一檢測命令至至少一儲存控制器,控制儲存控制器基於其記憶單元管理機制對所耦接之複數記憶元件進行檢測資料之寫入、讀取及比對,以減少主機與該些儲存控制器之間線路之佔據資源並檢測記憶單元管理機制對於記憶元件之功能正確性。 One of the objectives of the present invention is to provide a memory device detection apparatus and a detection method thereof, wherein a host outputs a detection command to at least one storage controller, and the storage controller is coupled based on its memory unit management mechanism. The plurality of memory elements perform writing, reading and comparison of the detection data to reduce the occupation resources of the line between the host and the storage controllers and to detect the functional correctness of the memory unit management mechanism for the memory elements.

本發明之目的之一,係提供一種記憶元件之檢測裝置及其檢測方法,藉由一主機輸出一檢測命令至至少一儲存控制器,以控制儲存控制器透過其記憶單元管理機制對所耦接之複數記憶元件進行檢測資料之寫入、讀取及比對,以增加檢測效率。 One of the objectives of the present invention is to provide a memory device detection apparatus and a detection method thereof, wherein a host outputs a detection command to at least one storage controller to control the storage controller to be coupled through its memory unit management mechanism The plurality of memory elements perform writing, reading and comparison of the detection data to increase the detection efficiency.

為了達到上述所指稱之各目的與功效,本發明揭示了一種記憶元件之檢測方法,其步驟包含:藉由一主機輸出一檢測命令;藉由一儲存控制器接收檢測命令,並依據檢測命令而依序寫入一第一 檢測資料至一邏輯位置對應之複數記憶元件,並更新一記憶單元管理資料,於寫入後透過一記憶單元管理機制查詢該些記憶元件之實體位置,並讀取實體位置對應之該些記憶元件儲存之第一檢測資料為一第二檢測資料,並比對第一檢測資料與第二檢測資料是否相同,以產生一檢測結果;以及藉由儲存控制器傳送檢測結果至主機。 In order to achieve the above-mentioned various purposes and effects, the present invention discloses a method for detecting a memory component, the method comprising: outputting a detection command by a host; receiving a detection command by a storage controller, and according to the detection command Write one first in order Detecting data to a plurality of memory elements corresponding to a logical position, and updating a memory unit management data, after writing, querying physical positions of the memory elements through a memory unit management mechanism, and reading the memory elements corresponding to the physical positions The stored first detection data is a second detection data, and compares whether the first detection data and the second detection data are the same to generate a detection result; and the detection result is transmitted to the host by the storage controller.

本發明更揭示了一種記憶元件之檢測裝置,其包含:一主機,輸出一檢測命令;以及一儲存控制器,依據檢測命令而依序寫入一第一檢測資料至一邏輯位置對應之複數記憶元件,同時更新一記憶單元管理資料,並於寫入後以一記憶單元管理機制查詢邏輯位置對應之一實體位置,讀取該實體位置之該些記憶元件儲存之第一檢測資料為一第二檢測資料,並比對第一檢測資料與第二檢測資料是否相同,以產生一檢測結果,並回傳檢測結果至主機。 The invention further discloses a detecting device for a memory component, comprising: a host, outputting a detection command; and a storage controller, sequentially writing a first detection data to a complex memory corresponding to a logical position according to the detection command The component simultaneously updates a memory unit management data, and after writing, queries a physical location corresponding to the physical location by a memory unit management mechanism, and reads the first detection data stored by the memory components of the physical location as a second Detecting the data, and comparing whether the first detection data and the second detection data are the same, to generate a detection result, and returning the detection result to the host.

本發明更揭示了一種記憶元件之檢測裝置,其包含:一主機,輸出一檢測命令至一儲存控制器,儲存控制器依據檢測命令而依序寫入一第一檢測資料至一邏輯位置對應之複數記憶元件,並於寫入後以一記憶單元管理機制將邏輯位置轉換為一實體位置,讀取實體位置對應之該些記憶元件儲存之第一檢測資料為一第二檢測資料,並比對第一檢測資料與第二檢測資料是否相同,以產生一檢測結果,並回傳檢測結果至主機。 The invention further discloses a detecting device for a memory component, comprising: a host, outputting a detection command to a storage controller, wherein the storage controller sequentially writes a first detection data to a logical position according to the detection command. a plurality of memory elements, and after writing, converting the logical position into a physical position by a memory unit management mechanism, and reading the first detected data stored by the memory elements corresponding to the physical position as a second detection data, and comparing Whether the first detection data and the second detection data are the same to generate a detection result, and return the detection result to the host.

10、40‧‧‧主機 10, 40‧‧‧ host

20、22、24、500、520、540‧‧‧儲存控制器 20, 22, 24, 500, 520, 540 ‧ ‧ storage controller

30、32、34、502、522、542‧‧‧記憶元件 30, 32, 34, 502, 522, 542 ‧ ‧ memory components

50、52、54‧‧‧記憶裝置 50, 52, 54‧‧‧ memory devices

第1圖為本發明之一較佳實施例之記憶元件之檢測裝置的電路方塊圖;第2圖為本發明之一較佳實施例之記憶元件之檢測方法的流程圖 ;第3圖為本發明之一較佳實施例之寫入、讀取及比對檢測資料的流程圖;第4圖本發明之另一較佳實施例之寫入、讀取及比對檢測資料的流程圖;以及第5圖為本發明之另一較佳實施例之記憶元件之檢測裝置的電路方塊圖。 1 is a circuit block diagram of a detecting device for a memory device according to a preferred embodiment of the present invention; and FIG. 2 is a flow chart showing a method for detecting a memory device according to a preferred embodiment of the present invention; FIG. 3 is a flow chart of writing, reading, and comparing detection data according to a preferred embodiment of the present invention; FIG. 4 is a diagram of writing, reading, and comparing detection according to another preferred embodiment of the present invention; A flowchart of the data; and FIG. 5 is a circuit block diagram of a detecting device for a memory element according to another preferred embodiment of the present invention.

在說明書及後續的申請專利範圍當中使用了某些詞彙來指稱特定的元件。所屬領域中具有通常知識者應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及後續的申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及後續的請求項當中所提及的「包含」係為一開放式的用語,故應解釋成「包含但不限定於」。以外,「耦接」一詞在此係包含任何直接及間接的電氣連接手段。因此,若文中描述一第一裝置耦接於一第二裝置,則代表該第一裝置可直接電氣連接於該第二裝置,或透過其他裝置或連接手段間接地電氣連接至該第二裝置。 Certain terms are used throughout the description and following claims to refer to particular elements. Those of ordinary skill in the art should understand that a hardware manufacturer may refer to the same component by a different noun. The scope of this specification and the subsequent patent application do not use the difference of the names as the means for distinguishing the elements, but the difference in function of the elements as the criterion for distinguishing. The term "including" as used throughout the specification and subsequent claims is an open term and should be interpreted as "including but not limited to". In addition, the term "coupled" is used herein to include any direct and indirect electrical connection. Therefore, if a first device is coupled to a second device, it means that the first device can be directly electrically connected to the second device or indirectly electrically connected to the second device through other devices or connection means.

為使 貴審查委員對本發明之特徵及所達成之功效有更進一步之瞭解與認識,謹佐以較佳之實施例及配合詳細之說明,說明如後: In order to provide a better understanding and understanding of the features and the efficacies of the present invention, the preferred embodiment and the detailed description are as follows:

請參閱第1圖,其為本發明之一較佳實施例之記憶元件之檢測裝置的電路方塊圖。如圖所示,本實施例之記憶元件之檢測裝置包含一主機10與一儲存控制器20。主機10用於輸出一檢測命令至儲 存控制器20。儲存控制器20則依據檢測命令而依序寫入一第一檢測資料至一邏輯檢測範圍之邏輯位置所對應之複數記憶元件30,並寫入一記憶單元管理資料(記憶單元管理機制所需之資料)至該些記憶元件30,並於寫入後根據記憶單元管理機制而將邏輯位置轉換為實體位置,接著讀取該些實體位置所對應之記憶元件30儲存之第一檢測資料為一第二檢測資料,並比對第一檢測資料與第二檢測資料以產生一檢測結果,並回傳檢測結果至主機10。 Please refer to FIG. 1 , which is a circuit block diagram of a detecting device for a memory element according to a preferred embodiment of the present invention. As shown in the figure, the detecting device of the memory component of the embodiment includes a host 10 and a storage controller 20. The host 10 is configured to output a detection command to the storage The controller 20 is stored. The storage controller 20 sequentially writes a first detection data to a plurality of memory elements 30 corresponding to a logical position of a logic detection range according to the detection command, and writes a memory unit management data (required for the memory unit management mechanism) Data) to the memory elements 30, and after the writing, the logical position is converted into a physical position according to the memory unit management mechanism, and then the first detection data stored by the memory element 30 corresponding to the physical positions is read as a first Second, the detection data is compared, and the first detection data and the second detection data are compared to generate a detection result, and the detection result is returned to the host 10.

其中,儲存控制器20所寫入之第一檢測資料可內建於儲存控制器20內,當主機10傳送包含邏輯檢測範圍之檢測命令至儲存控制器20時,儲存控制器20則輸出第一檢測資料,並以其記憶單元管理機制將邏輯檢測範圍內之邏輯位置轉換為實體位置,並寫入至對應實體位置之該些記憶元件30。或者,儲存控制器20可內建一檢測資料表(圖中未示),並依據主機10所輸出之檢測命令而輸出對應檢測命令之第一檢測資料。 The first detection data written by the storage controller 20 can be built in the storage controller 20. When the host 10 transmits the detection command including the logic detection range to the storage controller 20, the storage controller 20 outputs the first The data is detected, and the logical position within the logical detection range is converted into a physical position by its memory unit management mechanism, and written to the memory elements 30 corresponding to the physical location. Alternatively, the storage controller 20 may internally include a detection data table (not shown), and output the first detection data corresponding to the detection command according to the detection command output by the host 10.

請一併參閱第2圖,其為本發明之一較佳實施例之記憶元件之檢測方法的流程圖。如圖所示,首先執行步驟S10,檢測開始,接著執行步驟S20,主機10輸出檢測命令至儲存控制器20,以設定儲存控制器20對該些記憶元件30之邏輯檢測範圍,邏輯檢測範圍即對應所需檢測之該些記憶元件30的邏輯位置區間。接著,執行步驟S30,儲存控制器20依據檢測命令將邏輯位置透過記憶單元管理機制轉換為實體位置,並依序寫入第一檢測資料至對應實體位置之該些記憶元件30,同時依其記憶單元管理機制所需,將一記憶單元管理資料(管理所需之資料)寫入至記憶單元中更新,並於寫入後再次透過記憶單元管理機制得到此邏輯位置對應之實體 位置,讀取於此實體位置之該些記憶元件30儲存之第一檢測資料為第二檢測資料,並比對第一檢測資料與第二檢測資料以產生檢測結果。接著,執行步驟S40,儲存控制器20將檢測結果回傳至主機10。接著,執行步驟S50,檢測結束。 Please refer to FIG. 2, which is a flowchart of a method for detecting a memory element according to a preferred embodiment of the present invention. As shown in the figure, step S10 is first executed, and the detection is started. Then, in step S20, the host 10 outputs a detection command to the storage controller 20 to set the logical detection range of the memory device 30 by the storage controller 20. The logical detection range is Corresponding to the logical position interval of the memory elements 30 to be detected. Then, in step S30, the storage controller 20 converts the logical position into a physical location through the memory unit management mechanism according to the detection command, and sequentially writes the first detection data to the memory elements 30 corresponding to the physical location, and simultaneously stores the memory elements 30 according to the memory. The unit management mechanism needs to write a memory unit management data (the data required for management) to the memory unit for updating, and then, after writing, again obtain the entity corresponding to the logical position through the memory unit management mechanism. The first detection data stored by the memory elements 30 read at the physical location is the second detection data, and the first detection data and the second detection data are compared to generate a detection result. Next, in step S40, the storage controller 20 transmits the detection result back to the host 10. Next, step S50 is performed, and the detection ends.

請一併參閱第3圖,其為本發明之一較佳實施例之寫入、讀取及比對檢測資料的流程圖。如圖所示,當儲存控制器20接收到主機10所輸出之檢測命令後,執行步驟S301,儲存控制器20依據檢測命令進行將邏輯位置透過記憶單元管理機制轉換為實體位置並寫入第一檢測資料至實體位置對應之該些記憶元件30之一,並寫入記憶單元管理資料至該記憶元件30中以進行更新。接著,執行步驟S303,儲存控制器20判定第一檢測資料是否寫入成功,若寫入不成功(若記憶單元管理資料更新失敗亦屬於寫入不成功),則表示此記憶元件30有缺陷,並直接跳至步驟S40,以將此檢測結果回傳至主機10,若寫入成功則執行步驟S305。步驟S305為儲存控制器20透過記憶單元管理機制將邏輯位置轉換為實體位置後,得知步驟S301中寫入第一檢測資料之實體位置,並由已寫入第一檢測資料之記憶元件30中讀取資料,即讀取出所寫入之第一檢測資料(本發明將讀取出之第一檢測資料表示為第二檢測資料)。 Please refer to FIG. 3, which is a flow chart of writing, reading and comparing detection data according to a preferred embodiment of the present invention. As shown in the figure, after the storage controller 20 receives the detection command outputted by the host 10, step S301 is executed, and the storage controller 20 converts the logical position into a physical location through the memory unit management mechanism according to the detection command and writes the first The data is detected to one of the memory elements 30 corresponding to the physical location, and the memory unit management data is written into the memory element 30 for updating. Then, in step S303, the storage controller 20 determines whether the first detection data is successfully written. If the writing is unsuccessful (if the memory unit management data update fails, the writing is unsuccessful), indicating that the memory component 30 is defective. And skipping directly to step S40, the detection result is transmitted back to the host 10, and if the writing is successful, step S305 is performed. Step S305, after the storage controller 20 converts the logical position into the physical location through the memory unit management mechanism, the physical position of the first detection data is written in step S301, and is written into the memory component 30 of the first detection data. The data is read, that is, the written first detection data is read (the first detection data read by the present invention is represented as the second detection data).

接著,執行步驟S307,儲存控制器20比對寫入之第一檢測資料與讀取出之第二檢測資料是否相同,若兩者不同則表示此記憶元件30有缺陷,並直接跳至步驟S40,以將此檢測結果回傳至主機10,若兩者相同則表示此記憶元件30為正常,並執行步驟S309。步驟S309為儲存控制器20判斷是否已將所有之檢測資料寫入(第一檢測資料)、讀取(第二檢測資料)並比對完畢,即儲存控制器20 判斷是否已將邏輯檢測範圍內之該些記憶元件30皆進行檢測資料的寫入、讀取並比對完畢,若邏輯檢測範圍內之該些記憶元件30並未寫入、讀取及比對完畢,則回到步驟S301,儲存控制器20對還未寫入第一檢測資料之記憶元件30進行寫入,若步驟S309中判斷邏輯檢測範圍內之該些記憶元件30已寫入、讀取及比對完畢,則執行步驟S40,儲存控制器20回傳檢測結果至主機10。 Next, in step S307, the storage controller 20 compares whether the written first detection data and the read second detection data are the same. If the two are different, the memory element 30 is defective, and directly jumps to step S40. To return the detection result to the host 10, if the two are the same, the memory element 30 is normal, and step S309 is performed. In step S309, the storage controller 20 determines whether all the detected data has been written (first detection data), read (second detection data), and the comparison is completed, that is, the storage controller 20 Determining whether the memory elements 30 within the logic detection range have been written, read, and compared by the detection data, if the memory elements 30 within the logic detection range are not written, read, and compared When yes, the process returns to step S301, and the storage controller 20 writes to the memory component 30 that has not written the first detection data. If it is determined in step S309, the memory elements 30 in the logic detection range are written and read. After the comparison is completed, step S40 is executed, and the storage controller 20 returns the detection result to the host 10.

由上述可知,本實施例之儲存控制器20是依據檢測命令而先對邏輯檢測範圍內之該些記憶元件30之一進行寫入、讀取與比對,當此記憶元件30寫入、讀取並比對完成後,再進行下一個記憶元件30之寫入、讀取與比對,直到邏輯檢測範圍內之該些記憶元件30皆寫入、讀取與比對完成才結束檢測。 As can be seen from the above, the storage controller 20 of the present embodiment first writes, reads, and compares one of the memory elements 30 within the logic detection range according to the detection command, and writes and reads the memory element 30. After the comparison is completed, the writing, reading and comparison of the next memory element 30 are performed until the memory elements 30 within the logic detection range are all written, read and compared to complete the detection.

請一併參閱第4圖,其為本發明之另一較佳實施例之寫入、讀取及比對檢測資料的流程圖。如圖所示,當儲存控制器20接收到主機10所輸出之檢測命令後,執行步驟S302,儲存控制器20依據檢測命令,透過記憶單元管理機制將邏輯位置轉換為實體位置,寫入第一檢測資料至實體位置對應之該些記憶元件30之一,同時寫入記憶單元管理資料至該記憶元件30中以進行更新。接著,執行步驟S304,儲存控制器20判定第一檢測資料及記憶單元管理資料是否寫入成功,若寫入不成功,則表示此記憶元件30有缺陷,並直接跳至步驟S40,以將此檢測結果回傳至主機10,若寫入成功則執行步驟S306。步驟S306為儲存控制器判斷邏輯檢測範圍內之該些記憶元件30是否皆寫入第一檢測資料完畢,若否,則回到步驟S301,儲存控制器20對還未寫入第一檢測資料之邏輯位置對應之記憶元件30寫入第一檢測資料,若步驟S306中判斷邏輯檢測範 圍內之該些記憶元件30皆已寫入完畢,則執行步驟S308。步驟S308為儲存控制器20分別自已寫入第一檢測資料之邏輯位置對應之該些記憶元件30中讀取檢測資料(此動作包含由記憶單元管理機制以邏輯位置查詢實體位置之行為),即讀取出所寫入之第一檢測資料(本發明將讀取出之第一檢測資料表示為第二檢測資料)。 Please refer to FIG. 4, which is a flow chart of writing, reading and comparing detection data according to another preferred embodiment of the present invention. As shown in the figure, after the storage controller 20 receives the detection command output by the host 10, step S302 is executed, and the storage controller 20 converts the logical position into a physical position through the memory unit management mechanism according to the detection command, and writes the first The data is detected to one of the memory elements 30 corresponding to the physical location, and the memory unit management data is written to the memory element 30 for updating. Next, in step S304, the storage controller 20 determines whether the first detection data and the memory unit management data are successfully written. If the writing is unsuccessful, it indicates that the memory element 30 is defective, and directly jumps to step S40 to The detection result is transmitted back to the host 10, and if the writing is successful, step S306 is performed. Step S306: The storage controller determines whether the memory elements 30 in the logic detection range are all written into the first detection data. If not, the process returns to step S301, and the storage controller 20 writes the first detection data. The memory component 30 corresponding to the logical position writes the first detection data, and if the logic detection is determined in step S306 After the memory elements 30 in the range have been written, step S308 is performed. Step S308, the storage controller 20 reads the detection data from the memory elements 30 corresponding to the logical position of the first detection data, respectively (this action includes the behavior of querying the physical position by the memory unit management mechanism with the logical position), that is, The first detected data written is read out (the first detected data read by the present invention is represented as the second detected data).

接著,執行步驟S310,儲存控制器20比對寫入之第一檢測資料與讀取出之第二檢測資料是否相同,若兩者不同則表示此記憶元件30有缺陷,並直接跳至步驟S40,以將此檢測結果回傳至主機10,若兩者相同則表示此記憶元件30為正常,並執行步驟S312。步驟S312為儲存控制器20判斷是否已將所有之檢測資料讀取並比對完畢,即儲存控制器20判斷是否已將邏輯檢測範圍內之該些記憶元件30皆進行第二檢測資料的讀取並比對完畢,若邏輯檢測範圍內之該些記憶元件30並未讀取及比對完畢,則回到步驟S308,儲存控制器20對還未讀取出第二檢測資料之記憶元件30進行讀取,若步驟S312中判斷邏輯檢測範圍內之該些記憶元件30已讀取並比對完畢,則執行步驟S40,儲存控制器20回傳檢測結果至主機10。 Next, in step S310, the storage controller 20 compares whether the written first detection data and the read second detection data are the same. If the two are different, the memory element 30 is defective, and directly jumps to step S40. To return the detection result to the host 10, if the two are the same, the memory element 30 is normal, and step S312 is performed. In step S312, the storage controller 20 determines whether all the detected data have been read and compared, that is, the storage controller 20 determines whether the memory elements 30 within the logical detection range have been read by the second detection data. After the comparison is completed, if the memory elements 30 in the logic detection range are not read and compared, the process returns to step S308, and the storage controller 20 performs the memory element 30 on which the second detection data has not been read. If it is determined in step S312 that the memory elements 30 in the logic detection range have been read and compared, step S40 is executed, and the storage controller 20 returns the detection result to the host 10.

相較於第3圖之實施例,本實施例之儲存控制器20是依據檢測命令而先依序對邏輯檢測範圍內所對應之實體位置的該些記憶元件30寫入第一檢測資料,當邏輯檢測範圍內所對應之實體位置的該些記憶元件30皆寫入完成後,再依序對邏輯檢測範圍所對應之實體位置的該些記憶元件30進行讀取與比對,直到邏輯檢測範圍內所對應之實體位置內的該些記憶元件30皆讀取、比對完成才結束 檢測。 Compared with the embodiment of FIG. 3, the storage controller 20 of the embodiment first writes the first detection data to the memory elements 30 corresponding to the physical position corresponding to the logical detection range according to the detection command. After the memory elements 30 corresponding to the physical position corresponding to the logic detection range are all written, the memory elements 30 corresponding to the physical position corresponding to the logic detection range are sequentially read and compared until the logic detection range is completed. The memory elements 30 in the physical location corresponding to the internal reading are completed, and the comparison is completed. Detection.

復參閱第1圖,本發明之記憶元件之檢測裝置更可包含複數儲存控制器22、24,儲存控制器22與24分別耦接複數記憶元件32、34,並且主機10可依照第2-4圖之檢測方法,而分別且同時對該些儲存控制器20、22、24所耦接之該些記憶元件30、32、34進行檢測,檢測方式則如第2-4圖之說明,而不再贅述。 Referring to FIG. 1 , the detecting device of the memory device of the present invention may further include a plurality of storage controllers 22 and 24, and the storage controllers 22 and 24 are respectively coupled to the plurality of memory elements 32 and 34, and the host 10 may be in accordance with the second to fourth embodiments. The detection method of the figure, and the memory elements 30, 32, 34 coupled to the storage controllers 20, 22, 24 are detected separately and simultaneously, and the detection mode is as described in FIG. Let me repeat.

請參閱第5圖,其為本發明之另一較佳實施例之記憶元件之檢測裝置的電路方塊圖。如圖所示,本實施例之記憶元件之檢測裝置僅包含一主機40,主機40輸出一檢測命令至一記憶裝置50之一儲存控制器500,儲存控制器500依據檢測命令而依序寫入第一檢測資料至邏輯檢測範圍對應之複數記憶元件502,並於寫入後讀取該些邏輯檢測範圍對應之記憶元件502儲存之第一檢測資料為第二檢測資料,並比對第一檢測資料與第二檢測資料以產生檢測結果,並回傳檢測結果至主機40。 Please refer to FIG. 5, which is a circuit block diagram of a detecting device for a memory element according to another preferred embodiment of the present invention. As shown in the figure, the detecting device of the memory component of the embodiment includes only a host 40. The host 40 outputs a detection command to a storage controller 500 of a memory device 50. The storage controller 500 sequentially writes according to the detection command. The first detection data is to the complex memory component 502 corresponding to the logic detection range, and after reading, the first detection data stored by the memory component 502 corresponding to the logic detection ranges is read as the second detection data, and the first detection is compared. The data and the second detection data are used to generate a detection result, and the detection result is returned to the host 40.

本實施例與第1圖之實施例的差異在於,本實施例之記憶元件之檢測裝置僅包含主機40,而儲存控制器500與該些記憶元件502則是設置於記憶裝置50,此記憶裝置50可例如為隨身碟,當需檢測記憶裝置50時,僅需將記憶裝置50連接於主機40,儲存控制器500即依據主機40所傳送之檢測命令而進行記憶元件502之檢測,檢測方法相同於上述第1-4圖中所說明,而不再贅述。 The difference between the embodiment and the embodiment of FIG. 1 is that the detecting device of the memory component of the embodiment only includes the host 40, and the storage controller 500 and the memory components 502 are disposed on the memory device 50. 50 can be, for example, a flash drive. When the memory device 50 needs to be detected, the memory device 50 only needs to be connected to the host device 40. The storage controller 500 performs the detection of the memory component 502 according to the detection command transmitted by the host 40, and the detection method is the same. This is illustrated in the above Figures 1-4 and will not be described again.

此外,本實施例更可同時檢測複數記憶裝置,例如同時將複數記憶裝置50、52及54同時連接於主機40時,該些記憶裝置50、52及54之儲存控制器500、520及540及同時依據主機40所傳送之檢測 命令而對該些記憶元件502、522、542進行檢測,檢測方式亦如第2-4圖之說明,而不再贅述。 In addition, in this embodiment, the plurality of memory devices can be simultaneously detected. For example, when the plurality of memory devices 50, 52, and 54 are simultaneously connected to the host computer 40, the memory controllers 50, 52, and 54 are stored in the memory controllers 500, 520, and 540. At the same time, according to the detection transmitted by the host 40 The memory elements 502, 522, and 542 are detected by commands, and the detection mode is also as described in FIG. 2-4, and details are not described herein.

綜上所述,本發明之記憶元件之檢測裝置及其檢測方法,藉由一主機輸出一檢測命令至至少一儲存控制器,以控制儲存控制器以其記憶單元管理機制對所耦接之複數記憶元件進行檢測資料及記憶單元管理資料之寫入、讀取及檢測資料之比對。如此,本發明不需於檢測每一記憶元件時皆透過主機進行控制,因此可達到減少主機與該些儲存控制器之間線路所佔據的資源、增加檢測效率及檢測正確性之目的。 In summary, the detecting device of the memory component of the present invention and the detecting method thereof, by a host outputting a detection command to at least one storage controller, to control the storage controller to be coupled to the plurality of storage unit management mechanism pairs thereof The memory component performs the comparison of the writing, reading and detecting data of the detection data and the memory unit management data. In this way, the present invention does not need to be controlled by the host when detecting each memory component, thereby reducing the resources occupied by the line between the host and the storage controllers, increasing the detection efficiency, and detecting the correctness.

10‧‧‧主機 10‧‧‧Host

20、22、24‧‧‧儲存控制器 20, 22, 24‧‧‧ storage controller

30、32、34‧‧‧記憶元件 30, 32, 34‧‧‧ memory components

Claims (11)

一種記憶元件之檢測方法,其步驟包含:藉由一主機輸出一檢測命令,該主機係與複數儲存控制器連線;藉由每一該些儲存控制器接收該檢測命令,並依據該檢測命令而依序寫入一第一檢測資料至一邏輯位置對應之複數記憶元件,並更新一記憶單元管理資料,於寫入後透過一記憶單元管理機制查詢該些記憶元件之實體位置,並讀取該實體位置對應之該些記憶元件儲存之該第一檢測資料為一第二檢測資料,並比對該第一檢測資料與該第二檢測資料是否相同,以分別產生一檢測結果;以及藉由該些儲存控制器傳送該些檢測結果至該主機。 A method for detecting a memory component, the method comprising: outputting a detection command by a host, the host system is connected to a plurality of storage controllers; and each of the storage controllers receives the detection command, and according to the detection command And sequentially writing a first detection data to a plurality of memory elements corresponding to a logical position, and updating a memory unit management data, and after searching, querying physical positions of the memory elements through a memory unit management mechanism, and reading The first detection data stored by the memory elements corresponding to the physical location is a second detection data, and is different from the first detection data and the second detection data to generate a detection result respectively; The storage controllers transmit the detection results to the host. 如申請專利範圍第1項所述之檢測方法,其中於藉由每一該些儲存控制器接收該檢測命令,並依據該檢測命令而依序寫入該第一檢測資料至該邏輯位置對應之該些記憶元件,並於寫入後讀取該實體位置對應之該些記憶元件儲存之該第一檢測資料為該第二資料之步驟中包含:藉由每一該些儲存控制器依據該檢測命令而依序寫入該第一檢測資料至該邏輯位置對應之該些記憶元件,並分別依序讀取該些記憶元件儲存之該第一檢測資料為該第二檢測資料。 The detection method of claim 1, wherein the detection command is received by each of the storage controllers, and the first detection data is sequentially written according to the detection command to the logical position. And the step of: reading, by the memory device, the first detection data stored in the memory component corresponding to the physical location as the second data comprises: detecting, by each of the storage controllers The first detection data is sequentially written to the memory elements corresponding to the logical position, and the first detection data stored by the memory elements is sequentially read as the second detection data. 如申請專利範圍第2項所述之檢測方法,其中於分別依序讀取該些記憶元件儲存之該第一檢測資料為該第二檢測資料時,每一該些儲存控制器分別依序於讀取該第二檢測資料後比對該第一檢測 資料與該第二檢測資料是否相同,以產生該些檢測結果。 The detection method of claim 2, wherein, when the first detection data stored in the memory elements is sequentially read as the second detection data, each of the storage controllers is sequentially Reading the second detection data after comparing the first detection Whether the data is identical to the second test data to generate the test results. 如申請專利範圍第1項所述之檢測方法,其中該些儲存控制器分別內建該第一檢測資料。 The detection method of claim 1, wherein the storage controllers respectively build the first detection data. 如申請專利範圍第1項所述之檢測方法,其中該檢測命令設定每一該些儲存控制器對該些記憶元件之一邏輯檢測範圍,該邏輯檢測範圍對應所需檢測之該些記憶元件的數量。 The detection method of claim 1, wherein the detection command sets a logic detection range of each of the memory controllers for the memory elements, the logic detection range corresponding to the memory elements to be detected Quantity. 一種記憶元件之檢測裝置,其包含:一主機,輸出一檢測命令;以及複數儲存控制器,與該主機連線,且每一該些儲存控制器依據該檢測命令而依序寫入一第一檢測資料至一邏輯位置對應之複數記憶元件及更新一記憶單元管理資料,並於寫入後以一記憶單元管理機制查詢該邏輯位置對應之一實體位置,讀取該實體位置之該些記憶元件儲存之該第一檢測資料為一第二檢測資料,並比對該第一檢測資料與該第二檢測資料是否相同,以分別產生一檢測結果,且該些儲存控制器回傳該些檢測結果至該主機。 A detecting device for a memory component, comprising: a host, outputting a detection command; and a plurality of storage controllers connected to the host, and each of the storage controllers sequentially writes a first according to the detection command Detecting data to a plurality of memory elements corresponding to a logical position and updating a memory unit management data, and after writing, querying a physical position corresponding to the logical position by a memory unit management mechanism, and reading the memory elements of the physical position The stored first detection data is a second detection data, and is different from the first detection data and the second detection data to generate a detection result, and the storage controllers return the detection results. To the host. 如申請專利範圍第6項所述之檢測裝置,其中每一該些儲存控制器依據該檢測命令而依序寫入該第一檢測資料至該邏輯位置對應之該些記憶元件,並分別依序讀取該些記憶元件儲存之該第一檢測資料為該第二檢測資料。 The detecting device of claim 6, wherein each of the storage controllers sequentially writes the first detection data to the memory elements corresponding to the logical position according to the detection command, and sequentially The first detection data stored in the memory elements is read as the second detection data. 如申請專利範圍第6項所述之檢測裝置,其中每一該些儲存控制器依據該檢測命令而依序寫入該第一檢測資料至該邏輯位置對應之該些記憶元件,並於該些記憶元件寫入完成後,每一該些儲存控制器依序讀取該些記憶元件儲存之該第一檢測資料為該第二檢測資料。 The detecting device of claim 6, wherein each of the storage controllers sequentially writes the first detection data to the memory elements corresponding to the logical position according to the detection command, and After the writing of the memory component is completed, each of the storage controllers sequentially reads the first detection data stored by the memory components as the second detection data. 如申請專利範圍第6項所述之檢測裝置,其中每一該些儲存控制 器分別內建該第一檢測資料。 The detecting device according to claim 6, wherein each of the storage controls The first detection data is built in separately. 如申請專利範圍第6項所述之檢測裝置,其中該檢測命令設定每一該些儲存控制器對該些記憶元件之一邏輯檢測範圍,該邏輯檢測範圍對應所需檢測之該些記憶元件的數量。 The detecting device of claim 6, wherein the detecting command sets a logical detection range of each of the memory controllers for the memory components, wherein the logic detecting range corresponds to the memory components to be detected. Quantity. 一種記憶元件之檢測裝置,其包含:一主機,輸出一檢測命令至複數儲存控制器,每一該些儲存控制器依據該檢測命令而依序寫入一第一檢測資料至一邏輯位置對應之複數記憶元件,並於寫入後以記憶單元管理機制將該邏輯位置轉換為一實體位置,讀取該實體位置對應之該些記憶元件儲存之該第一檢測資料為一第二檢測資料,並比對該第一檢測資料與該第二檢測資料是否相同,以分別產生一檢測結果,並回傳該些檢測結果至該主機。 A detecting device for a memory component, comprising: a host, outputting a detection command to a plurality of storage controllers, each of the storage controllers sequentially writing a first detection data to a logical position according to the detection command a plurality of memory elements, and after the writing, convert the logical position into a physical position by using a memory unit management mechanism, and reading the first detection data stored by the memory elements corresponding to the physical position as a second detection data, and Whether the first detection data and the second detection data are the same to generate a detection result respectively, and return the detection results to the host.
TW103127184A 2014-08-08 2014-08-08 Memory device detection device and detection method thereof TWI559319B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103127184A TWI559319B (en) 2014-08-08 2014-08-08 Memory device detection device and detection method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103127184A TWI559319B (en) 2014-08-08 2014-08-08 Memory device detection device and detection method thereof

Publications (2)

Publication Number Publication Date
TW201606786A TW201606786A (en) 2016-02-16
TWI559319B true TWI559319B (en) 2016-11-21

Family

ID=55810127

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103127184A TWI559319B (en) 2014-08-08 2014-08-08 Memory device detection device and detection method thereof

Country Status (1)

Country Link
TW (1) TWI559319B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7624316B2 (en) * 2005-12-23 2009-11-24 Intel Corporation Apparatus and method for testing removable flash memory devices
US7702984B1 (en) * 2000-01-06 2010-04-20 Super Talent Electronics, Inc. High volume testing for USB electronic data flash cards
US7788553B2 (en) * 2000-01-06 2010-08-31 Super Talent Electronics, Inc. Mass production testing of USB flash cards with various flash memory cells
TW201035982A (en) * 2009-03-20 2010-10-01 Phison Electronics Corp Controller having flash memory testing functions, storage system and testing method thereof
US20130036255A1 (en) * 2011-08-05 2013-02-07 Apple Inc. Testing memory subsystem connectivity
US8386209B2 (en) * 2008-06-20 2013-02-26 University Of Limerick Testing system
US20140157053A1 (en) * 2012-12-05 2014-06-05 Christopher P. Mozak Memory subsystem data bus stress testing

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7702984B1 (en) * 2000-01-06 2010-04-20 Super Talent Electronics, Inc. High volume testing for USB electronic data flash cards
US7788553B2 (en) * 2000-01-06 2010-08-31 Super Talent Electronics, Inc. Mass production testing of USB flash cards with various flash memory cells
US7624316B2 (en) * 2005-12-23 2009-11-24 Intel Corporation Apparatus and method for testing removable flash memory devices
US8386209B2 (en) * 2008-06-20 2013-02-26 University Of Limerick Testing system
TW201035982A (en) * 2009-03-20 2010-10-01 Phison Electronics Corp Controller having flash memory testing functions, storage system and testing method thereof
US20130036255A1 (en) * 2011-08-05 2013-02-07 Apple Inc. Testing memory subsystem connectivity
US20140157053A1 (en) * 2012-12-05 2014-06-05 Christopher P. Mozak Memory subsystem data bus stress testing

Also Published As

Publication number Publication date
TW201606786A (en) 2016-02-16

Similar Documents

Publication Publication Date Title
KR101149270B1 (en) Systems and methods for testing integrated circuit devices
US20140337669A1 (en) On-Line Memory Testing Systems And Methods
US8205038B2 (en) Flash memory accessing apparatus and accessing method thereof
US9239752B2 (en) Semiconductor system with error detection
US11693802B2 (en) NAND switch
US9159454B2 (en) Failure detection apparatus for solid state drive tester
CN113791338B (en) Chip testing method and device
US20100131221A1 (en) Method for determining quality parameter and the electronic apparatus using the same
US20120271983A1 (en) Computing device and data synchronization method
JP4373615B2 (en) Initial bad block marking method
TWI387973B (en) Data storage apparatus, data storage controller, and related automated testing method
JP2008059718A (en) Semiconductor memory device
TWI559319B (en) Memory device detection device and detection method thereof
US7954019B2 (en) Flash storage device and method and system for testing the same
US9058863B2 (en) Reference frequency setting method, memory controller and memory storage apparatus
CN110956998A (en) Memory testing device and system
TWI765188B (en) Touch display panel and method of automatically recording firmware thereof
US11714555B2 (en) Control module and control method thereof for synchronous dynamic random access memory
US8953391B1 (en) Semiconductor apparatus
JP2010097330A (en) Method and device for testing address line
TWI569199B (en) Data process method and control system thereof
CN105513648A (en) Method and device for self-adaptively generating optimum performance configuration of chips
KR101911182B1 (en) Semiconductor test device capable of managing the life of the gender and method thereof
CN117769832A (en) Camera module inspection device and method
EP2317444A1 (en) Flash memory accessing apparatus and an accessing method thereof