TWI558866B - Manufacturing method of three-dimensional ordered micro-structure and device of self-assembling particle - Google Patents
Manufacturing method of three-dimensional ordered micro-structure and device of self-assembling particle Download PDFInfo
- Publication number
- TWI558866B TWI558866B TW103117724A TW103117724A TWI558866B TW I558866 B TWI558866 B TW I558866B TW 103117724 A TW103117724 A TW 103117724A TW 103117724 A TW103117724 A TW 103117724A TW I558866 B TWI558866 B TW I558866B
- Authority
- TW
- Taiwan
- Prior art keywords
- electric field
- substrate
- dimensional ordered
- recombination
- particles
- Prior art date
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
本發明是有關一種微結構之製造方法以及裝置,特別是一種三維有序微結構之製造方法以及自組裝粒子之裝置。The present invention relates to a method and apparatus for fabricating a microstructure, and more particularly to a method of fabricating a three-dimensional ordered microstructure and a device for self-assembling particles.
自然界中之蛋白石(opal)是由二氧化矽球形顆粒堆積而成。二氧化矽顆粒本身並不具有顏色,然而蛋白石仍可藉由有序微結構之特性形成多彩之外觀,因此,三維有序微結構即引起人們的興趣,並研究三維有序微結構之製作方法。The opal in nature is made up of spherical particles of cerium oxide. The cerium oxide particles do not have a color by themselves. However, the opal can still form a colorful appearance by the characteristics of the ordered microstructure. Therefore, the three-dimensional ordered microstructure is of interest, and the method of manufacturing the three-dimensional ordered microstructure is studied. .
習知三維有序微結構之製作方法包含重力沈降法、溶液蒸發法、電泳法或塗佈法等。然而,重力沈降法以及溶液蒸發法製作三維有序微結構需耗費數日,難以達到大量生產的規模。此外,製作之面積過小(小於1×1 cm),亦無法達到實質上的商品化應用。而電泳法雖具備較佳的生產效率,但影響粒子自組裝行為的變數較多,因此難以有效控制製程參數以得到連續性佳、高再現性以及大面積之三維有序微結構。同樣的,塗佈法亦無法有效降低缺陷量而難以得到連續性佳、高再現性以及大面積之三維有序微結構。Conventional methods for fabricating three-dimensional ordered microstructures include gravity sedimentation, solution evaporation, electrophoresis, or coating. However, it takes several days to produce a three-dimensional ordered microstructure by the gravity sedimentation method and the solution evaporation method, and it is difficult to achieve a large-scale production scale. In addition, the area of production is too small (less than 1 × 1 cm), and it is impossible to achieve substantial commercial application. Although electrophoresis has better production efficiency, it has many variables affecting particle self-assembly behavior, so it is difficult to effectively control process parameters to obtain good continuity, high reproducibility and large-area three-dimensional ordered microstructure. Similarly, the coating method cannot effectively reduce the amount of defects, and it is difficult to obtain a three-dimensional ordered microstructure having good continuity, high reproducibility, and large area.
綜上所述,如何製作連續性佳、高再現性以及大面積之三維有序微結構一直是目前極需努力的目標。In summary, how to make a three-dimensional ordered microstructure with good continuity, high reproducibility and large area has been the goal of great efforts.
本發明提供一種三維有序微結構之製造方法以及自組裝粒子之裝置,其是利用適當之電場驅動已沈積於基板之粒子進行自組裝,以得到連續性佳且大面積之三維有序微結構。The invention provides a method for manufacturing a three-dimensional ordered microstructure and a device for self-assembling particles, which use a suitable electric field to drive particles deposited on a substrate for self-assembly to obtain a three-dimensional ordered microstructure with good continuity and large area. .
本發明一實施例之三維有序微結構之製造方法包含:沈積多個粒子於一基板之一沈積表面;以沈積表面朝上平放基板;以及提供一第一重組電場以及一第二重組電場施加於基板,以驅動多個粒子自組裝以形成一三維有序微結構,其中第一重組電場之電場方向是從基板之四周朝向基板,第二重組電場之電場方向是從基板之沈積表面側朝向基板。A method for fabricating a three-dimensional ordered microstructure according to an embodiment of the present invention comprises: depositing a plurality of particles on a deposition surface of a substrate; laying the substrate with the deposition surface facing upward; and providing a first recombination electric field and a second recombination electric field Applied to the substrate to drive a plurality of particles to self-assemble to form a three-dimensional ordered microstructure, wherein the electric field direction of the first recombination electric field is from the periphery of the substrate toward the substrate, and the electric field direction of the second recombination electric field is from the deposition surface side of the substrate Facing the substrate.
本發明另一實施例之自組裝粒子之裝置用以驅動多個粒子自組裝以形成一三維有序微結構,其包含:一工作區、一第一電場產生器以及一第二電場產生器。工作區用以容置一基板,其中基板是以一沈積表面朝上平放於工作區,且基板之沈積表面沈積多個粒子。第一電場產生器用以產生一第一重組電場並施加於基板,其中第一重組電場之電場方向是從基板之四周朝向基板。第二電場產生器用以產生一第二重組電場並施加於基板,其中第二重組電場之電場方向是從基板之沈積表面側朝向基板。A device for self-assembling particles according to another embodiment of the present invention is configured to drive a plurality of particles to self-assemble to form a three-dimensional ordered microstructure, comprising: a working area, a first electric field generator, and a second electric field generator. The working area is for accommodating a substrate, wherein the substrate is placed on the working area with a deposition surface facing upward, and a plurality of particles are deposited on the deposition surface of the substrate. The first electric field generator is configured to generate a first recombination electric field and apply to the substrate, wherein the electric field direction of the first recombination electric field is from the periphery of the substrate toward the substrate. The second electric field generator is configured to generate a second recombination electric field and apply to the substrate, wherein the electric field direction of the second recombination electric field is from the deposition surface side of the substrate toward the substrate.
本發明又一實施例之無支撐之三維有序大孔結構是由人為製作而成。無支撐之三維有序大孔結構包含一主體,其具有多個有序排列的孔洞,且每一孔洞與相鄰之孔洞彼此相通,以形成一三維有序大孔結構,其中主體之材料為金屬、金屬氧化物或高分子聚合物。An unsupported three-dimensional ordered macroporous structure according to still another embodiment of the present invention is artificially fabricated. The unsupported three-dimensional ordered macroporous structure comprises a body having a plurality of ordered holes, and each hole and the adjacent holes communicate with each other to form a three-dimensional ordered macroporous structure, wherein the material of the main body is Metal, metal oxide or high molecular polymer.
以下藉由具體實施例配合所附的圖式詳加說明,當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。The purpose, technical contents, features, and effects achieved by the present invention will become more apparent from the detailed description of the appended claims.
三維有序微結構是指將組成之顆粒進行有序的三維排列所獲得之微結構。在特定的情況下,三維有序微結構可等同於膠體晶體(colloidal crystal),例如,組成微結構之顆粒具有高度均一的大小、形狀、化學組成、內部結構或表面性質等。因此,本發明所揭露之製造方法可應用於製作膠體晶體,但不限於此。需注意者,以膠體晶體為例,以膠體晶體為模版所製作之反膠體晶體結構亦可視為一三維有序微結構。The three-dimensional ordered microstructure refers to the microstructure obtained by orderly three-dimensional arrangement of the constituent particles. In a particular case, the three-dimensional ordered microstructure may be equivalent to a colloidal crystal, for example, the particles constituting the microstructure have a highly uniform size, shape, chemical composition, internal structure or surface properties, and the like. Therefore, the manufacturing method disclosed in the present invention can be applied to the production of colloidal crystals, but is not limited thereto. It should be noted that in the case of colloidal crystals, the inverse colloidal crystal structure prepared by using colloidal crystal as a template can also be regarded as a three-dimensional ordered microstructure.
請參照圖1,以說明本發明之一實施例之三維有序微結構之製造方法。首先,沈積多個粒子於一基板之一沈積表面(S10)。舉例而言,利用習知之重力沈降法、溶液蒸發法、電泳法或塗佈法即可將粒子沈積於一基板表面。請參照圖2,以電泳法說明沈積粒子於基板表面之步驟。於一實施例中,粒子11可為粒徑大小均一之二氧化矽顆粒或聚合物顆粒,例如聚苯乙烯,但不限於此。於一實施例中,粒子11之粒徑介於1nm至1000nm。將一基板10以直立方式設置於一電泳槽20中,電泳槽20中具有包含粒子之電泳懸浮溶液201。接著,以一沈積電場產生器21產生一電場方向朝向基板10之沈積電場211施加於基板10,即可驅動電泳懸浮溶液201之多個粒子11沈積於基板10之沈積表面101。舉例而言,沈積電場211之電場方向垂直基板10之沈積表面101。於圖2所示之實施例中,基板10是以直立方式設置於一電泳槽20中,需注意者,直立方式並不限於垂直,基板10與電泳懸浮溶液201之液面為其它角度之夾角亦不脫離本發明之範圍。或者,基板10亦能夠以水平方式設置於電泳槽20中進行粒子之沈積。另需注意者,沈積粒子於基板之步驟並不要求粒子11有序地排列於基板10之沈積表面101,因此,粒子11能夠以較快的速度沈積於基板10。可以理解的是,沈積於基板之粒子較為有序地排列有利於後續粒子自組裝的過程。Please refer to FIG. 1 to illustrate a method for fabricating a three-dimensional ordered microstructure according to an embodiment of the present invention. First, a plurality of particles are deposited on one of the deposition surfaces of a substrate (S10). For example, particles can be deposited on the surface of a substrate by conventional gravity sedimentation, solution evaporation, electrophoresis or coating. Referring to FIG. 2, the step of depositing particles on the surface of the substrate is described by electrophoresis. In one embodiment, the particles 11 may be cerium oxide particles or polymer particles having a uniform particle size, such as polystyrene, but are not limited thereto. In one embodiment, the particles 11 have a particle size between 1 nm and 1000 nm. A substrate 10 is disposed in an electrophoresis tank 20 in an upright manner, and the electrophoresis tank 20 has an electrophoresis suspension solution 201 containing particles. Next, a deposition electric field 211 that generates an electric field direction toward the substrate 10 is applied to the substrate 10 by a deposition electric field generator 21, that is, a plurality of particles 11 of the electrophoresis suspension solution 201 are driven to be deposited on the deposition surface 101 of the substrate 10. For example, the electric field direction of the deposition electric field 211 is perpendicular to the deposition surface 101 of the substrate 10. In the embodiment shown in FIG. 2, the substrate 10 is disposed in an electrophoresis tank 20 in an upright manner. It should be noted that the upright manner is not limited to vertical, and the liquid level of the substrate 10 and the electrophoretic suspension solution 201 is at an angle other than the angle. It is also within the scope of the invention. Alternatively, the substrate 10 can also be disposed in the electrophoresis tank 20 in a horizontal manner for deposition of particles. It should be noted that the step of depositing particles on the substrate does not require that the particles 11 be arranged in an orderly manner on the deposition surface 101 of the substrate 10, and therefore, the particles 11 can be deposited on the substrate 10 at a relatively high speed. It can be understood that the orderly arrangement of the particles deposited on the substrate facilitates the process of subsequent particle self-assembly.
請再參照圖1,接著,將基板10以沈積表面101朝上平放(S12)。最後,提供一第一重組電場以及一第二重組電場施加於基板,以驅動多個粒子自組裝以形成一三維有序微結構(S14)。請參照圖3,於一實施例中,基板10以沈積表面101朝上平放於一自組裝粒子之裝置之工作區。接著,以一第一電場產生器31產生一第一重組電場311以及一第二電場產生器32產生一第二重組電場321施加於基板10以驅動多個粒子自組裝。於一實施例中,第一重組電場311之電場方向是從基板之四周側面朝向基板10,第二重組電場321之電場方向則是從基板10之沈積表面101側朝向基板10。沈積基板10之粒子11受到第一重組電場311以及第二重組電場321的作用而彼此推擠並自組裝形成一最密堆積之三維有序微結構40或膠體晶體。於一實施例中,三維有序微結構40為一蛋白石結構。可以理解的是,在粒子自組裝的過程中,基板上之粒子必須保持一定程度的移動性。舉例而言,維持基板上之粒子的濕潤度或控制乾燥的速度,以避免粒子失去移動性。Referring again to FIG. 1, next, the substrate 10 is laid flat with the deposition surface 101 facing upward (S12). Finally, a first recombination electric field and a second recombination electric field are applied to the substrate to drive the plurality of particles to self-assemble to form a three-dimensional ordered microstructure (S14). Referring to FIG. 3, in an embodiment, the substrate 10 is placed with the deposition surface 101 facing up in a working area of a device for self-assembling particles. Next, a first electric field generator 31 generates a first recombination electric field 311 and a second electric field generator 32 generates a second recombination electric field 321 to be applied to the substrate 10 to drive a plurality of particles to self-assemble. In one embodiment, the electric field direction of the first recombination electric field 311 is from the peripheral side of the substrate toward the substrate 10, and the electric field direction of the second recombination electric field 321 is from the deposition surface 101 side of the substrate 10 toward the substrate 10. The particles 11 of the deposition substrate 10 are pushed by the first recombination electric field 311 and the second recombination electric field 321 to self-assemble to form a densely packed three-dimensional ordered microstructure 40 or colloidal crystal. In one embodiment, the three-dimensional ordered microstructure 40 is an opal structure. It can be understood that during the self-assembly of the particles, the particles on the substrate must maintain a certain degree of mobility. For example, maintaining the wetness of the particles on the substrate or controlling the rate of drying to avoid loss of mobility of the particles.
需注意者,圖3所示之實施例中,是在基板10之左右兩側分別繪製一第一電場產生器31。然而,第一重組電場311能夠以多個設置於基板10四周之第一電場產生器31產生或是以環繞基板10四周之單一第一電場產生器31產生。此外,第一電場產生器31以及第二電場產生器32亦可整合為單一電場產生器。舉例而言,以一半球型電極設置於基板之沈積表面側,而另一電極則設置於基板端,如此即可產生朝向基板之第一重組電場以及第二重組電場。因此,以單一電場或多個電場之電場方向涵蓋第一重組電場311以及第二重組電場321之電場方向皆不脫離本發明之範圍。It should be noted that in the embodiment shown in FIG. 3, a first electric field generator 31 is respectively drawn on the left and right sides of the substrate 10. However, the first recombination electric field 311 can be generated by a plurality of first electric field generators 31 disposed around the substrate 10 or by a single first electric field generator 31 surrounding the periphery of the substrate 10. Further, the first electric field generator 31 and the second electric field generator 32 may also be integrated into a single electric field generator. For example, a half-spherical electrode is disposed on the deposition surface side of the substrate, and the other electrode is disposed on the substrate end, so that a first recombination electric field toward the substrate and a second recombination electric field are generated. Therefore, the direction of the electric field covering the first recombination electric field 311 and the second recombination electric field 321 in the direction of the electric field of a single electric field or a plurality of electric fields does not depart from the scope of the present invention.
於一實施例中,第一電場產生器31以及第二電場產生器32可電性連接至一控制器33。控制器33可程式化控制第一電場產生器31以及第二電場產生器32所產生之第一重組電場311以及第二重組電場321至少其中之一。舉例而言,控制器33可控制第一電場產生器31以及第二電場產生器32至少其一所產生之電場為脈衝式電場。較佳者,控制器33不僅控制第一電場產生器31以及第二電場產生器32至少其一所產生之電場為脈衝式電場,更切換其電場方向為正向以及反向,例如週期性切換為正向或反向電場。為了易於說明,在此定義圖3所示之電場方向為正向電場方向。脈衝式電場以及切換正/反向電場可產生類似輕敲容器使容器內之彈珠形成最密堆積的效果。In an embodiment, the first electric field generator 31 and the second electric field generator 32 are electrically connected to a controller 33. The controller 33 can programmatically control at least one of the first recombination electric field 311 and the second recombination electric field 321 generated by the first electric field generator 31 and the second electric field generator 32. For example, the controller 33 can control at least one of the electric fields generated by the first electric field generator 31 and the second electric field generator 32 to be a pulsed electric field. Preferably, the controller 33 controls not only the electric field generated by at least one of the first electric field generator 31 and the second electric field generator 32 to be a pulsed electric field, but also switches the direction of the electric field to positive and negative, for example, periodic switching. It is a positive or negative electric field. For ease of explanation, the direction of the electric field shown in FIG. 3 is defined as the direction of the forward electric field. The pulsed electric field and switching the forward/reverse electric field can produce the effect of tapping the container to form the closest packing of the marbles in the container.
需注意者,圖1所示之實施例不僅能夠批式實施,亦能夠連續式實施。舉例而言,在基板10從圖2所示之直立狀態改為圖3所示之平放狀態時,亦可提供第一重組電場311以及第二重組電場321施加於基板,以維持粒子11於基板10之沈積表面101。簡言之,藉由第一重組電場311以及第二重組電場321的作用力,在基板移動的過程中仍能使粒子集中於預定區域避免散開,如此,即有利於以連續式製作三維有序微結構。It should be noted that the embodiment shown in FIG. 1 can be implemented not only in batch mode but also in a continuous manner. For example, when the substrate 10 is changed from the erect state shown in FIG. 2 to the flat state shown in FIG. 3, the first recombination electric field 311 and the second recombination electric field 321 may be applied to the substrate to maintain the particles 11 A deposition surface 101 of the substrate 10. In short, by the force of the first recombination electric field 311 and the second recombination electric field 321, the particles can be concentrated in a predetermined area during the movement of the substrate to avoid scattering, thus facilitating the three-dimensional ordering in a continuous manner. microstructure.
依據本發明之三維有序微結構之製造方法,藉由粒子自組裝的過程可形成無缺陷、連續性佳、高再現性之三維有序微結構,且製作面積可達1 cm× 1 cm以上,較佳者,10 cm × 10 cm以上。因此,本發明之製造方法所製作之三維有序微結構可為良好之模版以作為後續應用之基礎,例如製作一反蛋白石結構。需注意者,三維有序微結構不以正方形為限,矩形、多角形或圓形等亦不脫離本發明之範圍。According to the manufacturing method of the three-dimensional ordered microstructure of the present invention, a three-dimensional ordered microstructure with no defects, good continuity and high reproducibility can be formed by the process of self-assembly of particles, and the production area can reach 1 cm×1 cm or more. Preferably, it is 10 cm × 10 cm or more. Therefore, the three-dimensional ordered microstructure fabricated by the manufacturing method of the present invention can be a good template for use as a basis for subsequent applications, such as making an inverse opal structure. It should be noted that the three-dimensional ordered microstructure is not limited to a square, and a rectangle, a polygon or a circle does not depart from the scope of the present invention.
請參照圖4,說明本發明之製造方法所製作之三維有序微結構之應用實施例。首先,提供依據圖1所示之製造方法所製作之一三維有序微結構作為一模版(S41),如圖5所示。接著,充填一第一充填材料13於三維有序微結構40之空隙(S42),亦即粒子11間之空隙,如圖6所示。舉例而言,可將圖5所示之模版置於一充填槽(未圖示)中進行一電鍍或化學沈積等程序,以使第一充填材料13充填於三維有序微結構40之空隙。於一實施例中,第一充填材料可為金屬(例如金、銀、銅、鎳等)、金屬氧化物(例如氧化鋅)或為高分子聚合物。Referring to Fig. 4, an application example of a three-dimensional ordered microstructure fabricated by the manufacturing method of the present invention will be described. First, a three-dimensional ordered microstructure fabricated according to the manufacturing method shown in FIG. 1 is provided as a template (S41), as shown in FIG. Next, a first filling material 13 is filled in the gap of the three-dimensional ordered microstructure 40 (S42), that is, the gap between the particles 11, as shown in FIG. For example, the stencil shown in FIG. 5 can be placed in a filling tank (not shown) for a plating or chemical deposition process such that the first filling material 13 is filled in the gap of the three-dimensional ordered microstructure 40. In one embodiment, the first filling material may be a metal (eg, gold, silver, copper, nickel, etc.), a metal oxide (such as zinc oxide), or a high molecular polymer.
於一實施例中,基10板可包含一離型層(release layer)12,且三維有序微結構40形成於離型層12上,如圖5所示。由於第一充填材料可提供黏著劑之效果,因此,移除基板10(S43)即可形成無支撐(free standing)之三維有序微結構40,如圖7所示。需注意者,圖7仍繪有離型層12,可以理解的是,離型層12亦可隨著基板10剝離。In one embodiment, the base 10 plate may include a release layer 12, and a three-dimensional ordered microstructure 40 is formed on the release layer 12, as shown in FIG. Since the first filling material can provide the effect of the adhesive, the substrate 10 (S43) is removed to form a free standing three-dimensional ordered microstructure 40, as shown in FIG. It should be noted that FIG. 7 still depicts the release layer 12, it being understood that the release layer 12 may also be peeled off with the substrate 10.
請再參照圖4,於一實施例中,移除三維有序微結構中之多個粒子11,即可形成無支撐之一三維有序大孔(Macroporous)結構50 (S44),如圖8所示。以此實施例而言,三維有序大孔結構50為一反蛋白石結構。需注意者,三維有序大孔結構50可視為另一型式之一三維有序微結構。可以理解的是,三維有序大孔結構50中粒子11原本佔據位置形成一較大孔洞110,粒子11之間接觸的位置則形成較小的孔洞,且相鄰之較大孔洞可經由較小孔洞彼此相通。此外,選用適當之第一充填材料13,三維有序大孔結構50可具有可撓性。Referring to FIG. 4 again, in an embodiment, removing a plurality of particles 11 in the three-dimensional ordered microstructure can form an unsupported one-dimensional three-dimensional ordered macroporous structure 50 (S44), as shown in FIG. 8. Shown. In this embodiment, the three-dimensional ordered macropore structure 50 is an inverse opal structure. It should be noted that the three-dimensional ordered macroporous structure 50 can be regarded as one of the other three-dimensional ordered microstructures. It can be understood that the particles 11 in the three-dimensional ordered macroporous structure 50 originally occupy a large hole 110, and the contact between the particles 11 forms a smaller hole, and the adjacent large hole can be smaller. The holes are connected to each other. In addition, the three-dimensional ordered macroporous structure 50 can have flexibility using a suitable first filling material 13.
於一實施例中,若在移除基板的步驟中有離型層12殘留於三維有序微結構時,離型層12可在移除粒子11之過程中一併移除。In one embodiment, if the release layer 12 remains in the three-dimensional ordered microstructure during the step of removing the substrate, the release layer 12 may be removed during the removal of the particles 11.
於一實施例中,可再充填一第二充填材料14於三維有序大孔結構50中(S45),亦即第二充填材料14充填於粒子原本佔據的位置,如圖9所示。如前所述,第二充填材料14亦能夠以電鍍或化學沈積的方法充填於三維有序大孔結構50中。於一實施例中,移除第一充填材料13即可形成以第二充填材料14所構成之三維有序微結構60,如圖10所示。可以理解的是,圖10所示之三維有序微結構60相似於圖5所示之三維有序微結構40,其差別主要在於粒子11之位置的材料不同。In one embodiment, a second filling material 14 may be refilled in the three-dimensional ordered macroporous structure 50 (S45), that is, the second filling material 14 is filled in the position originally occupied by the particles, as shown in FIG. As previously mentioned, the second filling material 14 can also be filled in the three-dimensional ordered macroporous structure 50 by electroplating or chemical deposition. In one embodiment, the first filling material 13 is removed to form a three-dimensional ordered microstructure 60 formed of the second filling material 14, as shown in FIG. It can be understood that the three-dimensional ordered microstructure 60 shown in FIG. 10 is similar to the three-dimensional ordered microstructure 40 shown in FIG. 5, and the difference is mainly in the material of the position of the particles 11.
需注意者,圖4所示之實施例中,移除基板步驟是在充填第一充填材料之後即加以移除。然而,依據實際之需求,移除基板的步驟可在移除粒子(S44)、充填第二充填材料(S45)或移除第一充填材料(S46)之後執行,或者不移除基板。此外,圖4所示之實施例中,步驟S43至步驟S46為選擇性實施之步驟。It should be noted that in the embodiment shown in FIG. 4, the step of removing the substrate is removed after filling the first filling material. However, depending on the actual needs, the step of removing the substrate may be performed after removing the particles (S44), filling the second filling material (S45), or removing the first filling material (S46), or not removing the substrate. Further, in the embodiment shown in FIG. 4, steps S43 through S46 are steps of selective implementation.
綜合上述,本發明之三維有序微結構之製造方法以及自組裝粒子之裝置是利用適當之電場(例如正向、反向之脈衝式電場)驅動已沈積於基板之粒子進行自組裝,如此能夠以相對較短的製作時間得到無缺陷、連續性佳且大面積之三維有序微結構。此外,依據本發明所製作之三維有序微結構可作為一理想的模版,以轉製出其它型式之大面積三維有序微結構。In summary, the method for fabricating a three-dimensional ordered microstructure of the present invention and the device for self-assembling particles use a suitable electric field (for example, a forward and reverse pulsed electric field) to drive particles deposited on a substrate for self-assembly, thus enabling A three-dimensional ordered microstructure with no defects, good continuity and large area is obtained with a relatively short production time. In addition, the three-dimensional ordered microstructure fabricated in accordance with the present invention can be used as an ideal template to convert other types of large-area three-dimensional ordered microstructures.
以上所述之實施例僅是為說明本發明之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施,當不能以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵蓋在本發明之專利範圍內。The embodiments described above are only intended to illustrate the technical idea and the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.
10‧‧‧基板
101‧‧‧沈積表面
11‧‧‧粒子
12‧‧‧離型層
13‧‧‧第一充填材料
14‧‧‧第二充填材料
20‧‧‧電泳槽
201‧‧‧電泳懸浮溶液
21‧‧‧沈積電場產生器
211‧‧‧沈積電場
31‧‧‧第一電場產生器
311‧‧‧第一重組電場
32‧‧‧第二電場產生器
321‧‧‧第二重組電場
33‧‧‧控制器
40‧‧‧三維有序微結構
50‧‧‧三維有序大孔結構
60‧‧‧三維有序微結構
S10~S14‧‧‧本發明製造方法之步驟
S41~S46‧‧‧本發明製造方法之步驟10‧‧‧Substrate
101‧‧‧Sedimentary surface
11‧‧‧ particles
12‧‧‧ release layer
13‧‧‧First filling material
14‧‧‧Second filling material
20‧‧‧electrophoresis tank
201‧‧‧ Electrophoretic suspension solution
21‧‧‧Sedimentation electric field generator
211‧‧‧Sedimentary electric field
31‧‧‧First electric field generator
311‧‧‧First Recombination Electric Field
32‧‧‧Second electric field generator
321‧‧‧Second recombination electric field
33‧‧‧ Controller
40‧‧‧Three-dimensional ordered microstructure
50‧‧‧Three-dimensional ordered macroporous structure
60‧‧‧Three-dimensional ordered microstructure
S10~S14‧‧‧ steps of the manufacturing method of the invention
S41~S46‧‧‧ steps of the manufacturing method of the invention
圖1為一流程圖,顯示本發明一實施例之三維有序微結構之製造方法。 圖2為一示意圖,顯示以電泳法實現圖1所示之步驟S10。 圖3為一示意圖,顯示本發明一實施例之自組裝粒子之裝置。 圖4為一流程圖,顯示本發明另一實施例之三維有序微結構之製造方法。 圖5至圖10為一示意圖,顯示圖4所示步驟之局部結構。1 is a flow chart showing a method of fabricating a three-dimensional ordered microstructure according to an embodiment of the present invention. Fig. 2 is a schematic view showing the step S10 shown in Fig. 1 by electrophoresis. Figure 3 is a schematic view showing an apparatus for self-assembling particles according to an embodiment of the present invention. 4 is a flow chart showing a method of fabricating a three-dimensional ordered microstructure according to another embodiment of the present invention. 5 to 10 are schematic views showing the partial structure of the step shown in Fig. 4.
S10~S14‧‧‧本發明製造方法之步驟 S10~S14‧‧‧ steps of the manufacturing method of the invention
Claims (27)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103117724A TWI558866B (en) | 2014-05-21 | 2014-05-21 | Manufacturing method of three-dimensional ordered micro-structure and device of self-assembling particle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103117724A TWI558866B (en) | 2014-05-21 | 2014-05-21 | Manufacturing method of three-dimensional ordered micro-structure and device of self-assembling particle |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201544638A TW201544638A (en) | 2015-12-01 |
TWI558866B true TWI558866B (en) | 2016-11-21 |
Family
ID=55406976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103117724A TWI558866B (en) | 2014-05-21 | 2014-05-21 | Manufacturing method of three-dimensional ordered micro-structure and device of self-assembling particle |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI558866B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11118024B2 (en) | 2017-09-08 | 2021-09-14 | Tantti Laboratory Inc. | Method for producing three-dimensional ordered porous microstructure and monolithic column produced thereby |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200516047A (en) * | 2003-07-10 | 2005-05-16 | Univ North Carolina | Deposition method for nanostructure materials |
-
2014
- 2014-05-21 TW TW103117724A patent/TWI558866B/en active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200516047A (en) * | 2003-07-10 | 2005-05-16 | Univ North Carolina | Deposition method for nanostructure materials |
Non-Patent Citations (1)
Title |
---|
洪明宏,電泳自組裝模板形成反蛋白石結構光子晶體,一零一年一月 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11118024B2 (en) | 2017-09-08 | 2021-09-14 | Tantti Laboratory Inc. | Method for producing three-dimensional ordered porous microstructure and monolithic column produced thereby |
Also Published As
Publication number | Publication date |
---|---|
TW201544638A (en) | 2015-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10381125B2 (en) | Anisotropic, transparent, electroconductive, and flexible thin film structure including vertically aligned nanolines and method for preparing same | |
US10233559B2 (en) | High rate electric field driven nanoelement assembly on an insulated surface | |
WO2017080496A1 (en) | Method for manufacturing three-dimensional ordered porous microstructure | |
US20180251370A1 (en) | Method For Producing Structured Surfaces | |
Rosso | Electrodeposition from a binary electrolyte: new developments and applications | |
CN103852887A (en) | Electric wetting displayer and method and device for manufacturing electric wetting displayer | |
TWI558866B (en) | Manufacturing method of three-dimensional ordered micro-structure and device of self-assembling particle | |
TWI607118B (en) | High resistance virtual anode for electroplating cell, electoplating cell and method of treating surface of substrate | |
KR101382738B1 (en) | Apparatus and method for forming pattern by electrostactic spray, and method for manufacturing display panel | |
US6846578B2 (en) | Method of colloid crystal growth on patterned surfaces | |
WO2017163832A1 (en) | Transparent conductive film, method for manufacturing transparent conductive film, metal mold, and method for manufacturing metal mold | |
Chung et al. | Filling behavior of ZnO nanoparticles into opal template via electrophoretic deposition and the fabrication of inverse opal | |
US8384988B2 (en) | Photonic crystal and method of fabricating the same | |
KR101960526B1 (en) | Silver nanowire film and method for manufacturing thereof | |
KR102261854B1 (en) | Thin film deposition apparatus using electric filed and thin film depsotion method | |
CN107164795A (en) | A kind of bilateral AAO templates and its preparation method and application | |
TWI613147B (en) | Three-dimensional ordered porous microstructure manufacturing method | |
Huang et al. | A facile approach to fabricate Ni inverse opals at controlled thickness | |
CN104851523A (en) | Manufacture method of flexible transparent conductive membrane, and flexible transparent conductive membrane | |
KR20050006428A (en) | Device capable of patterning photonic crystal by an electric field, and method of the same | |
Mao et al. | In situ preparation of an ultra-thin nanomask on a silicon wafer | |
Hamagami et al. | Development of Particle Assembling Technology by Using Micro-Electrophoretic Deposition Process | |
JP4339600B2 (en) | Method for changing the interfacial tension of a liquid glass sample and apparatus for carrying out the method | |
CN113707781B (en) | Substrate and preparation method thereof | |
CN109866416B (en) | Full-digital nano additive manufacturing system and working method thereof |