TWI550731B - Chip package process and chip package - Google Patents

Chip package process and chip package Download PDF

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Publication number
TWI550731B
TWI550731B TW102106418A TW102106418A TWI550731B TW I550731 B TWI550731 B TW I550731B TW 102106418 A TW102106418 A TW 102106418A TW 102106418 A TW102106418 A TW 102106418A TW I550731 B TWI550731 B TW I550731B
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Taiwan
Prior art keywords
wafer
flexible
carrier
film
electronic component
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TW102106418A
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Chinese (zh)
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TW201434094A (en
Inventor
周世文
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南茂科技股份有限公司
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Priority to TW102106418A priority Critical patent/TWI550731B/en
Priority to CN201310335386.7A priority patent/CN104008982B/en
Publication of TW201434094A publication Critical patent/TW201434094A/en
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Publication of TWI550731B publication Critical patent/TWI550731B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

晶片封裝製程及晶片封裝 Chip packaging process and chip package

本發明是有關於一種封裝製程及封裝結構,且特別是有關於一種晶片封裝製程及晶片封裝結構。 The present invention relates to a package process and package structure, and more particularly to a chip package process and a chip package structure.

隨著數位資訊時代(digital information age)的到來,多媒體商品、家用電器、個人數位商品等已快速發展。此等商品通常需要小型、高效能、多功能、高速、大容量、低價格等特徵。因此,已發展了堆疊封裝(stacked package)或系統級封裝(system in package),其中多個晶片在單個半導體封裝(single semiconductor)中平行地堆疊或一個在另一個的上面垂直地堆疊。 With the advent of the digital information age, multimedia goods, household appliances, and personal digital goods have developed rapidly. These products usually require features such as small size, high efficiency, versatility, high speed, large capacity, and low price. Therefore, a stacked package or a system in package has been developed in which a plurality of wafers are stacked in parallel in a single semiconductor or vertically stacked on top of one another.

堆疊封裝或系統級封裝,包括在單個封裝中組裝的多個晶片,且具有以下優勢:可增加電效能,可縮小封裝之大小,以及可減小製造成本。然而,由於在堆疊封裝或系統級封裝中晶片墊的間距較小,因此在晶片墊與互連基板(interconnection substrate)之互連墊(interconnection pad)之間的連接較為困難。 Stacked or system-in-packages, including multiple wafers assembled in a single package, have the advantages of increased electrical performance, reduced package size, and reduced manufacturing costs. However, since the pitch of the wafer pads is small in a stacked package or system level package, the connection between the wafer pads and the interconnection pads of the interconnection substrate is difficult.

為解決此問題,在堆疊封裝或系統級封裝中使用多層互連基 板(multi-layered interconnection substrate),或額外中介層(interposer)用於晶片墊與互連基板之互連墊之間的連接。意即,在習知堆疊封裝或系統級封裝中,在多層互連基板或額外中介層中形成重配置線路層(redistribution layer),且然後使用重配置線路層將晶片墊連接至互連基板之互連墊。 To solve this problem, use multiple layers of interconnects in a stacked package or system-in-package A multi-layered interconnection substrate, or an interposer, is used for the connection between the wafer pads and the interconnect pads of the interconnect substrate. That is, in a conventional stacked package or system-in-package, a redistribution layer is formed in a multilayer interconnection substrate or an additional interposer, and then the wafer pad is connected to the interconnect substrate using a reconfiguration wiring layer. Interconnect pads.

然而,由於在習知堆疊封裝或系統級封裝中使用多層互連基板或額外中介層晶片來執行再分配,因此增加了封裝成本以及封裝厚度,如此將難以滿足現今對電子裝置的薄型化要求。 However, since the redistribution is performed using a multilayer interconnection substrate or an additional interposer wafer in a conventional stacked package or system-in-package, packaging cost and package thickness are increased, which makes it difficult to meet the thinning requirements of electronic devices today.

本發明提供一種晶片封裝製程,其製作出之晶片封裝之厚度較薄且製程較為簡單。 The invention provides a chip packaging process, wherein the fabricated wafer package has a thin thickness and a relatively simple process.

本發明提供一種晶片封裝,其具有較薄之封裝厚度且其製程較為簡單。 The present invention provides a wafer package having a thin package thickness and a relatively simple process.

本發明的晶片封裝製程,其包括下列步驟。首先,提供晶圓。晶圓具有主動表面以及相對於主動表面之背面。晶圓包括多個彼此連接且陣列排列之第一晶片。接著,設置可撓性重配置線路薄膜於晶圓之背面上。可撓性重配置線路薄膜包括多個陣列排列且對應於第一晶片的重配置線路圖案。接著,切割晶圓及可撓性重配置線路薄膜以使第一晶片彼此分離,並使重配置線路圖案彼此分離。接著,將其中一個第一晶片設置於承載器上,並使第一晶片之主動表面朝向承載器。接著,設置電子元件於重配置線路圖案上。之後,透過多個連接端子 電性連接電子元件與承載器。 The wafer packaging process of the present invention comprises the following steps. First, a wafer is provided. The wafer has an active surface and a back side opposite the active surface. The wafer includes a plurality of first wafers that are connected to each other and arranged in an array. Next, a flexible reconfigurable line film is placed on the back side of the wafer. The flexible reconfigurable line film includes a plurality of array arrangements and corresponds to a reconfigured line pattern of the first wafer. Next, the wafer and the flexible reconfigurable wiring film are diced to separate the first wafers from each other and to separate the reconfigured wiring patterns from each other. Next, one of the first wafers is placed on the carrier with the active surface of the first wafer facing the carrier. Next, the electronic components are placed on the reconfiguration line pattern. After that, through multiple connection terminals The electronic component and the carrier are electrically connected.

本發明提出一種晶片封裝,其包括一承載器、一第一晶片、一可撓性重配置線路圖案、一電子元件以及多個連接端子。第一晶片設置於承載器上並具有一主動表面以及相對主動表面的一背面。主動表面朝向承載器。可撓性重配置線路圖案設置於第一晶片之背面上。可撓性重配置線路圖案之邊緣與第一晶片之邊緣實質上切齊。電子元件設置於可撓性重配置線路圖案上。連接端子分別電性連接電子元件與承載器。 The present invention provides a chip package including a carrier, a first wafer, a flexible reconfigurable line pattern, an electronic component, and a plurality of connection terminals. The first wafer is disposed on the carrier and has an active surface and a back surface opposite the active surface. The active surface faces the carrier. The flexible reconfiguration line pattern is disposed on the back side of the first wafer. The edges of the flexible reconfigurable line pattern are substantially aligned with the edges of the first wafer. The electronic components are disposed on the flexible reconfigurable line pattern. The connection terminals are electrically connected to the electronic component and the carrier, respectively.

在本發明的一實施例中,上述之可撓性重配置線路薄膜係利用一黏著層貼附於晶圓之背面上。 In an embodiment of the invention, the flexible reconfigurable wiring film is attached to the back surface of the wafer by an adhesive layer.

在本發明的一實施例中,上述之設置可撓性重配置線路薄膜於晶圓之背面上的步驟更包括下列步驟。首先,提供一重配置線路組件。重配置線路組件包括一基膜(base film)、一離型膜(release film)以及可撓性重配置線路薄膜。離型膜設置於基膜以及可撓性重配置線路薄膜之間。可撓性重配置線路薄膜包括一可撓性基材以及一圖案化金屬層。圖案化金屬層位於離型膜及可撓性基材之間。接著,使重配置線路組件之可撓性基材與晶圓之背面接合。接著,切割晶圓以及可撓性基材。之後,使離型膜與各第一晶片分離,以暴露出各第一晶片上的圖案化金屬層。 In an embodiment of the invention, the step of providing the flexible reconfigurable line film on the back side of the wafer further comprises the following steps. First, a reconfiguration line component is provided. The reconfiguration line assembly includes a base film, a release film, and a flexible reconfigurable line film. The release film is disposed between the base film and the flexible reconfigurable wiring film. The flexible reconfigurable wiring film includes a flexible substrate and a patterned metal layer. The patterned metal layer is between the release film and the flexible substrate. Next, the flexible substrate of the reconfiguration line assembly is bonded to the back side of the wafer. Next, the wafer and the flexible substrate are diced. Thereafter, the release film is separated from each of the first wafers to expose the patterned metal layer on each of the first wafers.

在本發明的一實施例中,上述之使離型膜與各第一晶片分離的方法包括下列步驟。首先,透過一頂針推頂基膜,以減少其中一個 第一晶片與離型膜的接合面積。拾取被頂針推頂之第一晶片。 In an embodiment of the invention, the method of separating the release film from each of the first wafers comprises the following steps. First, push the base film through a thimble to reduce one of them. The bonding area of the first wafer and the release film. Picking up the first wafer that is pushed by the thimble.

在本發明的一實施例中,上述之第一晶片透過覆晶接合的方式設置於承載器上。 In an embodiment of the invention, the first wafer is disposed on the carrier by flip chip bonding.

在本發明的一實施例中,上述之電子元件更包括多個焊球,重配置線路圖案包括多個焊墊,以分別與焊球接合,而承載器更包括多個接墊。電子元件透過焊球、焊墊、連接端子以及接墊與承載器電性連接。 In an embodiment of the invention, the electronic component further includes a plurality of solder balls, and the reconfigurable circuit pattern includes a plurality of solder pads for respectively bonding with the solder balls, and the carrier further includes a plurality of pads. The electronic component is electrically connected to the carrier through solder balls, pads, connection terminals, and pads.

在本發明的一實施例中,上述之透過連接端子電性連接電子元件與承載器的方法包括下列步驟:首先,分別形成多個第一端點於焊墊上。接著,分別形成多個第二端點於接墊上。以多個導電材由第一端點分別連接至第二端點而形成連接端子。 In an embodiment of the invention, the method for electrically connecting the electronic component and the carrier through the connection terminal comprises the following steps: First, forming a plurality of first terminals on the bonding pads respectively. Then, a plurality of second end points are respectively formed on the pads. A connection terminal is formed by connecting a plurality of conductive materials from the first end points to the second end points, respectively.

在本發明的一實施例中,上述之電子元件包括第二晶片。 In an embodiment of the invention, the electronic component includes a second wafer.

在本發明的一實施例中,上述之電子元件包括記憶體或被動元件。 In an embodiment of the invention, the electronic component comprises a memory or a passive component.

在本發明的一實施例中,上述之可撓性重配置線路薄膜的厚度介於25μm至150μm之間。 In an embodiment of the invention, the flexible reconfigurable wiring film has a thickness of between 25 μm and 150 μm.

在本發明的一實施例中,上述之連接端子包括一第一端點、一第二端點以及一焊線。各第一端點設置於對應之焊墊上。各第二端點設置於對應之接墊上。各焊線由對應之第一端點連接至對應之第二端點。 In an embodiment of the invention, the connecting terminal includes a first end point, a second end point, and a bonding wire. Each first end point is disposed on a corresponding pad. Each second end point is disposed on a corresponding pad. Each bond wire is connected by a corresponding first end point to a corresponding second end point.

基於上述,本發明將一可撓性重配置線路薄膜設置於晶圓之 背面上,其中可撓性重配置薄膜包括多個陣列排列且對應晶圓之多個晶片而設置的重配置線路圖案。接著再執行切割製程以使晶片彼此分離並使重配置線路圖案彼此分離。如此,切割後之各晶片皆具有重配置線路圖案,而無須依照習知製程在切割晶圓後,將單體化之多個晶片分別設置一具有重配置線路層之中介層,以進行後續之元件堆疊製程。此外,由此製程所製作出之晶片封裝,由於重配置線路薄膜的厚度較習知的中介層薄,因此,本發明不但可大幅簡化習知繁複的晶片封裝製程,更可有效降低晶片封裝的厚度。 Based on the above, the present invention provides a flexible reconfigurable wiring film on a wafer. On the back side, wherein the flexible reconfigurable film comprises a plurality of reconfigured line patterns arranged in an array and corresponding to a plurality of wafers of the wafer. The dicing process is then performed to separate the wafers from each other and to separate the reconfigured line patterns from each other. In this way, each of the diced wafers has a reconfigured line pattern, and the singulated plurality of wafers are respectively disposed with an interposer having a reconfigured circuit layer for subsequent processing after the wafer is diced according to a conventional process. Component stacking process. In addition, since the thickness of the reconfigured wiring film is thinner than the conventional interposer in the wafer package produced by the process, the present invention can not only greatly simplify the conventional chip packaging process, but also effectively reduce the chip package. thickness.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.

10‧‧‧晶片封裝 10‧‧‧ Chip package

20‧‧‧頂針 20‧‧‧ thimble

30‧‧‧拾取治具 30‧‧‧ Pick up fixture

100‧‧‧晶圓 100‧‧‧ wafer

110‧‧‧主動表面 110‧‧‧Active surface

120‧‧‧背面 120‧‧‧Back

130‧‧‧第一晶片 130‧‧‧First chip

134‧‧‧凸塊 134‧‧‧Bumps

200‧‧‧重配置線路組件 200‧‧‧Reconfigure line components

210‧‧‧基膜 210‧‧‧ base film

220‧‧‧離型膜 220‧‧‧ release film

230‧‧‧可撓性重配置線路薄膜 230‧‧‧Flexible reconfigurable line film

232‧‧‧可撓性基材 232‧‧‧Flexible substrate

234‧‧‧圖案化金屬層 234‧‧‧ patterned metal layer

234a‧‧‧重配置線路圖案 234a‧‧‧Reconfigured line pattern

234b、132‧‧‧焊墊 234b, 132‧‧‧ solder pads

234c‧‧‧第二接墊 234c‧‧‧second mat

240‧‧‧黏著層 240‧‧‧Adhesive layer

300‧‧‧承載器 300‧‧‧ Carrier

310‧‧‧第一接墊 310‧‧‧First mat

400‧‧‧電子元件 400‧‧‧Electronic components

410‧‧‧焊球 410‧‧‧ solder balls

500‧‧‧連接端子 500‧‧‧Connecting terminal

510‧‧‧第一端點 510‧‧‧ first endpoint

520‧‧‧第二端點 520‧‧‧second endpoint

530‧‧‧焊線 530‧‧‧welding line

D1‧‧‧推頂方向 D1‧‧‧Top direction

圖1A至1G是依照本發明之一實施例之一種晶片封裝製程的流程剖面示意圖。 1A to 1G are schematic cross-sectional views showing a process of a wafer packaging process in accordance with an embodiment of the present invention.

圖2是圖1G的可撓性重配置線路薄膜的上視示意圖。 2 is a top plan view of the flexible reconfigurable wiring film of FIG. 1G.

圖1A至1G是依照本發明之一實施例之一種晶片封裝製程的流程剖面示意圖。在本實施例中,晶片封裝製程包括下列步驟:首先,請參照圖1A,提供晶圓100。晶圓100具有一主動表面110以及相對於主動表面110之一背面120。晶圓100包括多個 彼此連接且陣列排列之第一晶片130,各第一晶片130上設置有多個焊墊132;於其一較佳之實施例中,第一晶片130之焊墊132上亦可預先形成凸塊134,其中,預先形成之凸塊134可為錫球(solder ball)、結線凸塊(stud bump)、金凸塊(gold bump)或銅凸塊(copper pillar)等。接著,請參照圖1B,設置一可撓性重配置線路薄膜230於晶圓100之背面120上。可撓性重配置線路薄膜230包括多個對應於第一晶片130之焊墊132而設置之重配置線路圖案234a。 1A to 1G are schematic cross-sectional views showing a process of a wafer packaging process in accordance with an embodiment of the present invention. In this embodiment, the wafer packaging process includes the following steps: First, referring to FIG. 1A, a wafer 100 is provided. Wafer 100 has an active surface 110 and a back surface 120 opposite one of active surfaces 110. Wafer 100 includes multiple Each of the first wafers 130 that are connected to each other and arranged in an array is provided with a plurality of pads 132 on the first wafers 130. In a preferred embodiment, the pads 132 of the first wafers 130 may be pre-formed with bumps 134. The pre-formed bumps 134 may be solder balls, stud bumps, gold bumps or copper pillars, and the like. Next, referring to FIG. 1B, a flexible reconfigurable wiring film 230 is disposed on the back surface 120 of the wafer 100. The flexible reconfigurable wiring film 230 includes a plurality of reconfigured wiring patterns 234a disposed corresponding to the pads 132 of the first wafer 130.

具體而言,在本實施例中,設置可撓性重配置線路薄膜230於晶圓100之背面120上的方法更包括下列步驟:首先,提供如圖1B所示之一重配置線路組件200。重配置線路組件200包括一基膜210(base film)、一離型膜220(release film)以及可撓性重配置線路薄膜230,其中,離型膜220設置於基膜210以及可撓性重配置線路薄膜230之間。一般而言,離型膜220為表面具有分離性之薄膜,其與特定的材料在特定的條件下接觸後不具有黏性或僅具有輕微的黏性。可撓性重配置線路薄膜230包括一可撓性基材232以及一圖案化金屬層234,其中,圖案化金屬層234位於離型膜220及可撓性基材232之間,且具有上述之多個陣列排列且對應於第一晶片130之焊墊132而設置的重配置線路圖案234a。 Specifically, in the present embodiment, the method of providing the flexible reconfigurable line film 230 on the back surface 120 of the wafer 100 further includes the following steps: First, a reconfigurable line assembly 200 as shown in FIG. 1B is provided. The reconfiguration line assembly 200 includes a base film 210, a release film 220, and a flexible reconfigurable wiring film 230, wherein the release film 220 is disposed on the base film 210 and is flexible Between the line films 230 is disposed. In general, the release film 220 is a film having a separation surface which does not have a viscosity or only a slight viscosity after contact with a specific material under specific conditions. The flexible reconfigurable wiring film 230 includes a flexible substrate 232 and a patterned metal layer 234, wherein the patterned metal layer 234 is located between the release film 220 and the flexible substrate 232, and has the above A plurality of rearrangement line patterns 234a arranged in an array and corresponding to the pads 132 of the first wafer 130.

接著,將重配置線路組件200之可撓性基材232與晶圓 100之背面120接合。詳細而言,重配置線路組件200更包括一黏著層240,重配置線路組件200即透過黏著層240將其可撓性基材232貼附於晶圓100之背面120上。在本實施例中,黏著層240可例如為一膠帶、B階(B-Stage)黏膠或黏晶膠(DAF)等。接著,請參照圖1C,切割晶圓100以及可撓性重配置線路薄膜230,以使第一晶片130彼此分離,並使重配置線路圖案234a彼此分離。接著,再利用離型膜220易於剝離的特性,使離型膜220與各第一晶片130分離,以暴露出各第一晶片130上的圖案化金屬層234。值得注意的是,本實施例之切割步驟並未切斷重配置線路組件200之離型膜220與基膜210。 Next, the flexible substrate 232 and wafer of the line component 200 will be reconfigured The back side 120 of 100 is joined. In detail, the reconfiguration line assembly 200 further includes an adhesive layer 240 that attaches the flexible substrate 232 to the back surface 120 of the wafer 100 through the adhesive layer 240. In this embodiment, the adhesive layer 240 can be, for example, a tape, a B-Stage adhesive or a DAD. Next, referring to FIG. 1C, the wafer 100 and the flexible rearrangement line film 230 are diced to separate the first wafers 130 from each other and to separate the rearrangement line patterns 234a from each other. Next, the release film 220 is separated from each of the first wafers 130 by the characteristics that the release film 220 is easily peeled off to expose the patterned metal layer 234 on each of the first wafers 130. It should be noted that the cutting step of the present embodiment does not cut off the release film 220 and the base film 210 of the reconfiguration line assembly 200.

舉例而言,將離型膜220與各第一晶片130分離的方法可包括下列步驟:如圖1D所示,透過一頂針20往上推頂基膜210,以減少其中一個第一晶片130與離型膜220的接合面積。換句話說,由於受到頂針20的推頂,基膜210以及離型膜220往一推頂方向D1撓曲,因而使離型膜220與第一晶片130上之圖案化金屬層234的接觸面積減小至約等於頂針20截面積的大小。此時。再利用例如一拾取治具30由上方拾取被頂針20推頂之第一晶片130,即可使第一晶片130與離型膜220分離。本實施例中,拾取治具30可為一真空吸嘴(圖示僅為示意)。 For example, the method of separating the release film 220 from each of the first wafers 130 may include the steps of: as shown in FIG. 1D, pushing the base film 210 upward through a ejector pin 20 to reduce one of the first wafers 130 and The joint area of the release film 220. In other words, due to the ejector of the ejector pin 20, the base film 210 and the release film 220 are deflected in a pushing direction D1, thereby bringing the contact area of the release film 220 and the patterned metal layer 234 on the first wafer 130. Reduced to approximately equal to the size of the cross-sectional area of the thimble 20. at this time. The first wafer 130 is separated from the release film 220 by, for example, picking up the jig 30 and picking up the first wafer 130 pushed up by the ejector pin 20. In this embodiment, the pick-up jig 30 can be a vacuum nozzle (illustration is merely illustrative).

承上述,如圖1E所示,將上述被拾取之第一晶片130設置於承載器300上,並使第一晶片130之主動表面110朝向承載 器300。在本實施例中,第一晶片130係透過覆晶封裝的方式設置於承載器300上。於其它較佳之實施例中,承載器300可為導線架、基板、軟板(如薄膜)、或印刷電路板等。接著,再如圖1F所示,設置電子元件400於重配置線路圖案234a上。在本實施例中,電子元件400可為堆疊於第一晶片130上之一第二晶片。在本發明之其他實施例中,電子元件400亦可為記憶體、被動元件或散熱片等其他電子元件,本發明並不限定電子元件400的種類。電子元件400包括多個焊球410,電子元件400係透過焊球410分別與重配置線路圖案234a上之多個焊墊234b接合。 As described above, as shown in FIG. 1E, the first wafer 130 to be picked up is disposed on the carrier 300, and the active surface 110 of the first wafer 130 is oriented toward the carrier. Device 300. In this embodiment, the first wafer 130 is disposed on the carrier 300 through a flip chip package. In other preferred embodiments, the carrier 300 can be a lead frame, a substrate, a flexible board (such as a film), or a printed circuit board or the like. Next, as shown in FIG. 1F, the electronic component 400 is placed on the relocation line pattern 234a. In this embodiment, the electronic component 400 can be a second wafer stacked on the first wafer 130. In other embodiments of the present invention, the electronic component 400 may be other electronic components such as a memory, a passive component, or a heat sink. The invention does not limit the type of the electronic component 400. The electronic component 400 includes a plurality of solder balls 410 that are respectively bonded to the plurality of pads 234b on the rearrangement line pattern 234a via the solder balls 410.

圖2是圖1G的可撓性重配置線路薄膜的上視示意圖。接著,請同時參照圖1G以及圖2,透過多個連接端子500電性連接電子元件400與承載器300。在本實施例中,承載器300包括多個第一接墊310,而重配置線路圖案234a如圖1G以及圖2所示包括多個焊墊234b以及多個第二接墊234c,焊墊234b用以與焊球410接合。第二接墊234c則用以與連接端子500接合。電子元件400係透過焊球410、焊墊234b、第二接墊234c、連接端子500以及第一接墊310所形成之電連接路徑而與承載器300電性連接。具體而言,連接端子500是以反向焊線接合(reverse wire-bonding)的方式電性連接電子元件400與承載器300,更進一步來說,本實施例可例如透過一打線機在承載器300之第一接墊310上形成多個第一端點510,再以打線機在第二接墊234c上 形成多個第二端點520,再將打線機由第一端點510移動至第二端點520,且打線機在移動之過程中穩定地釋放出一導電材質,以形成連接第一端點510及第二端點520之焊線530,連接端子500即由第一端點510、第二端點520及焊線530所組成,較佳地,焊線530材質可選自於銅、銀、金或其合金。如此,即可以反向焊線接合的方式電性連接電子元件400與承載器300。此種反向焊線接合之方式可降低焊線高度對於晶片封裝10之厚度的影響,因而可進一步降低晶片封裝10的厚度。 2 is a top plan view of the flexible reconfigurable wiring film of FIG. 1G. Next, referring to FIG. 1G and FIG. 2 simultaneously, the electronic component 400 and the carrier 300 are electrically connected through the plurality of connection terminals 500. In this embodiment, the carrier 300 includes a plurality of first pads 310, and the reconfiguration line pattern 234a includes a plurality of pads 234b and a plurality of second pads 234c, as shown in FIG. 1G and FIG. Used to bond with the solder ball 410. The second pad 234c is for engaging with the connection terminal 500. The electronic component 400 is electrically connected to the carrier 300 through an electrical connection path formed by the solder ball 410, the solder pad 234b, the second pad 234c, the connection terminal 500, and the first pad 310. Specifically, the connection terminal 500 is electrically connected to the electronic component 400 and the carrier 300 in a reverse wire-bonding manner. Further, the embodiment can be, for example, through a wire bonding machine on the carrier. A plurality of first end points 510 are formed on the first pads 310 of the 300, and then the second wire pad 234c is used by the wire bonding machine. Forming a plurality of second end points 520, moving the wire bonding machine from the first end point 510 to the second end point 520, and the wire bonding machine stably releases a conductive material during the movement to form a connection first end point 510 and the second end point 520 of the bonding wire 530, the connecting terminal 500 is composed of the first end point 510, the second end point 520 and the bonding wire 530. Preferably, the bonding wire 530 material can be selected from copper and silver. , gold or its alloys. In this way, the electronic component 400 and the carrier 300 can be electrically connected in a reverse wire bonding manner. This manner of reverse wire bonding can reduce the effect of the wire height on the thickness of the wafer package 10, thereby further reducing the thickness of the chip package 10.

如此,本實施例將一可撓性重配置線路薄膜230設置於晶圓100之背面120上,可撓性重配置薄膜包括多個陣列排列且對應晶圓100之多個晶片130而設置之重配置線路圖案234a,接著再執行切割製程以使晶片130彼此分離以及使重配置線路圖案234a彼此分離。如此,切割後之各獨立的晶片130皆已具有重配置線路圖案234a,而無須依照習知製程,在切割晶圓程序後,再將單體化之多個晶片逐一設置具有重配置線路層之中介層,以進行後續之元件堆疊製程。因此,本實施例可省略習知的中介層製程,更可大幅簡化習知繁複的晶片封裝10製程。此外,由於可撓性重配置線路薄膜230的厚度較習知的中介層為薄,因此本實施例以可撓性重配置線路薄膜230取代中介層,可有效降低晶片封裝10的厚度。 As such, in the present embodiment, a flexible reconfigurable wiring film 230 is disposed on the back surface 120 of the wafer 100. The flexible reconfigurable film includes a plurality of arrays arranged and corresponding to the plurality of wafers 130 of the wafer 100. The line pattern 234a is disposed, and then a dicing process is performed to separate the wafers 130 from each other and to separate the reconfigured line patterns 234a from each other. In this way, each of the diced wafers 130 after the dicing has the reconfigured circuit pattern 234a, and the singulated wafers are disposed one by one after the wafer dicing process. Intermediary layer for subsequent component stacking processes. Therefore, this embodiment can omit the conventional interposer process, and can greatly simplify the complicated process of the chip package 10. Further, since the thickness of the flexible rearrangement line film 230 is thinner than that of the conventional interposer, the present embodiment can replace the interposer with the flexible rearrangement line film 230, and the thickness of the wafer package 10 can be effectively reduced.

如上述之晶片封裝製程可製作出如圖1G所示之晶片封 裝10。在本實施例中,晶片封裝10包括一承載器300、一第一晶片130、一可撓性重配置線路圖案234a、一電子元件400以及多個連接端子500。值得注意的是,本實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,本實施例不再重複贅述。第一晶片130設置於承載器300上並具有主動表面110以及相對主動表面110之背面120。主動表面110朝向承載器300。可撓性重配置線路圖案234a設置於第一晶片130之背面120上,且可撓性重配置線路圖案234a之邊緣與第一晶片130之邊緣實質上切齊。而可撓性重配置線路薄膜230的厚度介於25μm至150μm之間。電子元件400設置於可撓性重配置線路圖案234a上。連接端子500分別電性連接電子元件400與承載器300。在本實施例中,連接端子500是以反向焊線接合的方式電性連接電子元件400與承載器300,更詳細而言,連接端子500包括一第一端點510、一第二端點520以及一焊線530。各第一端點510設置於對應之第二接墊234c上。各第二端點520設置於對應之第一接墊310上。各焊線530由對應之第一端點510連接至對應之第二端點520。此種反向焊線接合之方式可降低焊線高度對於晶片封裝10之厚度的影響,因而可進一步降低晶片封裝10的厚度。 The wafer encapsulation process as described above can produce a wafer package as shown in FIG. 1G. Install 10. In the present embodiment, the chip package 10 includes a carrier 300, a first wafer 130, a flexible reconfigurable line pattern 234a, an electronic component 400, and a plurality of connection terminals 500. It is to be noted that the same reference numerals are used to designate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiment, and the description is not repeated herein. The first wafer 130 is disposed on the carrier 300 and has an active surface 110 and a back surface 120 opposite the active surface 110. The active surface 110 faces the carrier 300. The flexible reconfiguration line pattern 234a is disposed on the back surface 120 of the first wafer 130, and the edge of the flexible reconfiguration line pattern 234a is substantially aligned with the edge of the first wafer 130. The thickness of the flexible reconfigurable wiring film 230 is between 25 μm and 150 μm. The electronic component 400 is disposed on the flexible reconfiguration line pattern 234a. The connection terminals 500 are electrically connected to the electronic component 400 and the carrier 300, respectively. In this embodiment, the connection terminal 500 is electrically connected to the electronic component 400 and the carrier 300 by means of reverse wire bonding. In more detail, the connection terminal 500 includes a first end point 510 and a second end point. 520 and a bonding wire 530. Each of the first end points 510 is disposed on the corresponding second pad 234c. Each of the second end points 520 is disposed on the corresponding first pad 310. Each bond wire 530 is coupled to a corresponding second end point 520 by a corresponding first end point 510. This manner of reverse wire bonding can reduce the effect of the wire height on the thickness of the wafer package 10, thereby further reducing the thickness of the chip package 10.

綜上所述,本發明將一可撓性重配置線路薄膜設置於晶 圓之背面上,其中可撓性重配置薄膜包括多個陣列排列且對應晶圓之多個晶片而設置的重配置線路圖案。接著再執行切割製程以使晶片彼此分離並使重配置線路圖案彼此分離。如此,切割後之各晶片皆具有重配置線路圖案,而無須依照習知製程在切割晶圓後,將單體化之多個晶片分別設置一具有重配置線路層之中介層,以進行後續之元件堆疊製程。因此,本發明可省略中介層的製程,更可大幅簡化習知的晶片封裝之繁複製程。此外,由此製程所製作出之晶片封裝,由於重配置線路薄膜的厚度較習知的中介層為薄,因此,本發明以可撓性重配置線路薄膜取代中介層,可有效降低晶片封裝的厚度。 In summary, the present invention sets a flexible reconfigurable line film on the crystal On the back side of the circle, wherein the flexible reconfigurable film comprises a plurality of reconfigured line patterns arranged in an array and corresponding to a plurality of wafers of the wafer. The dicing process is then performed to separate the wafers from each other and to separate the reconfigured line patterns from each other. In this way, each of the diced wafers has a reconfigured line pattern, and the singulated plurality of wafers are respectively disposed with an interposer having a reconfigured circuit layer for subsequent processing after the wafer is diced according to a conventional process. Component stacking process. Therefore, the present invention can omit the process of the interposer, and can greatly simplify the complicated copying process of the conventional chip package. In addition, in the wafer package produced by the process, since the thickness of the re-arranged line film is thinner than the conventional interposer, the present invention can effectively reduce the chip package by replacing the interposer with a flexible reconfigurable line film. thickness.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧晶片封裝 10‧‧‧ Chip package

130‧‧‧第一晶片 130‧‧‧First chip

230‧‧‧可撓性重配置線路薄膜 230‧‧‧Flexible reconfigurable line film

232‧‧‧可撓性基材 232‧‧‧Flexible substrate

234a‧‧‧重配置線路圖案 234a‧‧‧Reconfigured line pattern

234b‧‧‧焊墊 234b‧‧‧ solder pads

234c‧‧‧第二接墊 234c‧‧‧second mat

300‧‧‧承載器 300‧‧‧ Carrier

310‧‧‧接墊 310‧‧‧ pads

400‧‧‧電子元件 400‧‧‧Electronic components

410‧‧‧焊球 410‧‧‧ solder balls

500‧‧‧連接端子 500‧‧‧Connecting terminal

510‧‧‧第一端點 510‧‧‧ first endpoint

520‧‧‧第二端點 520‧‧‧second endpoint

530‧‧‧焊線 530‧‧‧welding line

Claims (12)

一種晶片封裝製程,包括:提供一晶圓,該晶圓具有一主動表面以及相對於該主動表面之一背面,其中該晶圓包括多個彼此連接且陣列排列之第一晶片;設置一可撓性重配置線路薄膜於該晶圓之該背面上,其中該可撓性重配置線路薄膜包括多個陣列排列且對應於該些第一晶片的重配置線路圖案,其中設置該可撓性重配置線路薄膜於該晶圓之該背面上的步驟更包括:提供一重配置線路組件,該重配置線路組件包括一基膜(base film)、一離型膜(release film)以及該可撓性重配置線路薄膜,該離型膜設置於該基膜以及該可撓性重配置線路薄膜之間,該可撓性重配置線路薄膜包括一可撓性基材以及一圖案化金屬層,該圖案化金屬層位於該離型膜及該可撓性基材之間;使該重配置線路組件之該可撓性基材與該晶圓之該背面接合;切割該晶圓以及該可撓性基材;以及將該離型膜與各該第一晶片分離,以暴露出各該第一晶片上的該圖案化金屬層;切割該晶圓以及該可撓性重配置線路薄膜以使該些第一晶片彼此分離,並且使該些重配置線路圖案彼此分離;將其中一個第一晶片設置於一承載器上,並使該第一晶片之該主動表面朝向該承載器;設置一電子元件於該第一晶片上之該重配置線路圖案上;以及透過多個連接端子電性連接該電子元件與該承載器。 A wafer packaging process includes: providing a wafer having an active surface and a back surface opposite to the active surface, wherein the wafer includes a plurality of first wafers connected to each other and arranged in an array; Reconfiguring the line film on the back side of the wafer, wherein the flexible reconfigurable line film comprises a plurality of array arrangements and corresponding to the reconfigured line patterns of the first wafers, wherein the flexible reconfiguration is set The step of the line film on the back side of the wafer further includes: providing a reconfiguration line assembly including a base film, a release film, and the flexible reconfiguration a wiring film disposed between the base film and the flexible reconfigurable wiring film, the flexible reconfigurable wiring film comprising a flexible substrate and a patterned metal layer, the patterned metal a layer between the release film and the flexible substrate; bonding the flexible substrate of the reconfigurable circuit assembly to the back surface of the wafer; cutting the wafer and the flexible substrate; as well as Separating the release film from each of the first wafers to expose the patterned metal layer on each of the first wafers; cutting the wafers and the flexible reconfigurable wiring film to cause the first wafers to be in contact with each other Separating and separating the reconfigured line patterns from each other; disposing one of the first wafers on a carrier and directing the active surface of the first wafer toward the carrier; and disposing an electronic component on the first wafer And reconfiguring the line pattern; and electrically connecting the electronic component and the carrier through the plurality of connection terminals. 如申請專利範圍第1項所述之晶片封裝製程,其中該可撓性重配置線路薄膜係利用一黏著層貼附於該晶圓之該背面上。 The wafer packaging process of claim 1, wherein the flexible reconfigurable wiring film is attached to the back surface of the wafer by an adhesive layer. 如申請專利範圍第1項所述之晶片封裝製程,其中將該離型膜 與各該第一晶片分離的步驟包括:透過一頂針推頂該基膜,以減少其中一個第一晶片與該離型膜的接合面積;以及拾取被該頂針推頂之第一晶片。 The wafer packaging process of claim 1, wherein the release film is The step of separating from each of the first wafers includes: pushing the base film through a thimble to reduce a bonding area of one of the first wafers with the release film; and picking up the first wafer pushed by the ejector. 如申請專利範圍第1項所述之晶片封裝製程,其中該第一晶片透過覆晶接合的方式設置於該承載器上。 The wafer packaging process of claim 1, wherein the first wafer is disposed on the carrier by flip chip bonding. 如申請專利範圍第1項所述之晶片封裝製程,其中該電子元件包括多個焊球,重配置線路圖案包括多個焊墊,以分別與該些焊球接合,而該承載器包括多個接墊,該電子元件透過該些焊球、該些焊墊、該些連接端子以及該些接墊與該承載器電性連接。 The wafer packaging process of claim 1, wherein the electronic component comprises a plurality of solder balls, and the reconfigurable circuit pattern comprises a plurality of pads for respectively bonding with the solder balls, and the carrier comprises a plurality of The electronic component is electrically connected to the carrier through the solder balls, the solder pads, the connecting terminals, and the pads. 如申請專利範圍第5項所述之晶片封裝製程,其中透過多個連接端子電性連接該電子元件與該承載器的步驟包括:分別形成多個第一端點於該些接墊上;分別形成多個第二端點於該些焊墊上;以及以多個導電材由該些第一端點分別連接至該些第二端點而形成該些連接端子。 The chip packaging process of claim 5, wherein the step of electrically connecting the electronic component and the carrier through the plurality of connection terminals comprises: forming a plurality of first end points on the pads respectively; respectively forming The plurality of second terminals are on the pads; and the plurality of conductive materials are respectively connected to the second terminals by the first end points to form the connection terminals. 如申請專利範圍第1項所述之晶片封裝製程,其中該電子元件包括第二晶片、記憶體或被動元件。 The wafer packaging process of claim 1, wherein the electronic component comprises a second wafer, a memory or a passive component. 一種晶片封裝,包括:一承載器;一第一晶片,設置於該承載器上並具有一主動表面以及相對該主動表面之一背面,該主動表面朝向該承載器;一可撓性重配置線路圖案,設置於該第一晶片之該背面上,該可撓性重配置線路圖案之邊緣與該第一晶片之邊緣實質上切齊,其中該可撓性重配置線路圖案包括一可撓性基材以及一圖案化金屬層,該可撓性基材配置於該圖案化金屬層以及該第一晶片之間; 一電子元件,設置於該可撓性重配置線路圖案上;以及多個連接端子,分別電性連接該電子元件與該承載器。 A chip package comprising: a carrier; a first wafer disposed on the carrier and having an active surface and a back surface opposite the active surface, the active surface facing the carrier; a flexible reconfigurable line a pattern disposed on the back surface of the first wafer, the edge of the flexible reconfigurable line pattern being substantially aligned with an edge of the first wafer, wherein the flexible reconfigurable line pattern comprises a flexible base And a patterned metal layer disposed between the patterned metal layer and the first wafer; An electronic component disposed on the flexible reconfiguration circuit pattern; and a plurality of connection terminals electrically connecting the electronic component and the carrier, respectively. 如申請專利範圍第8項所述之晶片封裝,其中該可撓性重配置線路薄膜的厚度介於25μm至150μm之間。 The wafer package of claim 8, wherein the flexible reconfigurable wiring film has a thickness of between 25 μm and 150 μm. 如申請專利範圍第8項所述之晶片封裝,其中該電子元件更包括多個焊球,重配置線路圖案包括多個焊墊,分別與該些焊球接合,該承載器更包括多個接墊,該電子元件透過該些焊球、該些焊墊、該些連接端子以及該些接墊與該承載器電性連接。 The chip package of claim 8, wherein the electronic component further comprises a plurality of solder balls, and the reconfigurable circuit pattern comprises a plurality of solder pads respectively bonded to the solder balls, the carrier further comprising a plurality of connections The electronic component is electrically connected to the carrier through the solder balls, the pads, the connecting terminals, and the pads. 如申請專利範圍第10項所述之晶片封裝,其中各該連接端子包括一第一端點、一第二端點以及一焊線,各該第一端點設置於對應之接墊上,各該第二端點設置於對應之焊墊上,各該焊線由對應之第一端點連接至對應之第二端點。 The chip package of claim 10, wherein each of the connection terminals comprises a first end point, a second end point, and a bonding wire, each of the first end points being disposed on a corresponding pad, each of the The second end point is disposed on the corresponding pad, and each of the bonding wires is connected to the corresponding second end point by the corresponding first end point. 如申請專利範圍第8項所述之晶片封裝,其中該電子元件包括第二晶片、記憶體或被動元件。 The wafer package of claim 8, wherein the electronic component comprises a second wafer, a memory or a passive component.
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Publication number Priority date Publication date Assignee Title
TWI606555B (en) 2015-05-15 2017-11-21 尼克森微電子股份有限公司 Chip package structure and manufacturing method thereof
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200416787A (en) * 2002-10-08 2004-09-01 Chippac Inc Semiconductor stacked multi-package module having inverted second package
TW200603245A (en) * 2004-05-12 2006-01-16 Sharp Kk Adhesive sheet commonly used for dicing/die bonding and semiconductor device using the same
TW200939428A (en) * 2008-03-03 2009-09-16 Advanced Semiconductor Eng Multi-chip package structure and method of fabricating the same
TW201208018A (en) * 2010-08-05 2012-02-16 Advanced Semiconductor Eng Circuit substrate and manufacturing method thereof and package structure and manufacturing method thereof
TW201222683A (en) * 2010-11-18 2012-06-01 Siliconware Precision Industries Co Ltd Method of forming semiconductor package

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006005101A (en) * 2004-06-16 2006-01-05 Rohm Co Ltd Semiconductor device
US7812434B2 (en) * 2007-01-03 2010-10-12 Advanced Chip Engineering Technology Inc Wafer level package with die receiving through-hole and method of the same
CN101252092B (en) * 2008-03-12 2011-07-06 日月光半导体制造股份有限公司 Multi-chip packaging structure and making method thereof
CN101866895B (en) * 2009-04-20 2012-03-21 日月光半导体制造股份有限公司 Chip structure and forming method thereof
CN102270616A (en) * 2011-08-19 2011-12-07 日月光半导体制造股份有限公司 Wafer level packaging structure and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200416787A (en) * 2002-10-08 2004-09-01 Chippac Inc Semiconductor stacked multi-package module having inverted second package
TW200603245A (en) * 2004-05-12 2006-01-16 Sharp Kk Adhesive sheet commonly used for dicing/die bonding and semiconductor device using the same
TW200939428A (en) * 2008-03-03 2009-09-16 Advanced Semiconductor Eng Multi-chip package structure and method of fabricating the same
TW201208018A (en) * 2010-08-05 2012-02-16 Advanced Semiconductor Eng Circuit substrate and manufacturing method thereof and package structure and manufacturing method thereof
TW201222683A (en) * 2010-11-18 2012-06-01 Siliconware Precision Industries Co Ltd Method of forming semiconductor package

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