TWI550472B - Touch panel and touch display apparatus - Google Patents

Touch panel and touch display apparatus Download PDF

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TWI550472B
TWI550472B TW104143079A TW104143079A TWI550472B TW I550472 B TWI550472 B TW I550472B TW 104143079 A TW104143079 A TW 104143079A TW 104143079 A TW104143079 A TW 104143079A TW I550472 B TWI550472 B TW I550472B
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refractive index
dielectric layer
index dielectric
layer
touch
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TW104143079A
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TW201706791A (en
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何寬鑫
葉文斌
趙峰
李榮華
黃菲菲
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宸鴻科技(廈門)有限公司
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Description

觸控面板與觸控顯示裝置 Touch panel and touch display device

本發明係關於觸控面板,更特別關於其結構與包含其之觸控顯示裝置。 The present invention relates to a touch panel, and more particularly to a structure thereof and a touch display device including the same.

觸控面板已廣泛應用於家庭用品、通訊裝置、及電子資訊裝置等電子產品,逐漸取代實體鍵盤與滑鼠等習知的輸入介面,並提供有效率的操作介面。目前的觸控面板已發展出直接將感測電極製作形成於保護蓋板上的單片基板結構。此類結構之觸控面板雖輕薄,但若感測電極為蝕刻圖案時,蝕刻區域與非蝕刻區域間的光反射不同,造成觸控面板的外觀具有色差等光學問題。因此在觸控面板中設有光學補償層來改善光學問題。 Touch panels have been widely used in electronic products such as household goods, communication devices, and electronic information devices, gradually replacing the conventional input interfaces such as physical keyboards and mice, and providing an efficient operation interface. Current touch panels have developed a single-piece substrate structure in which a sensing electrode is directly formed on a protective cover. Although the touch panel of such a structure is light and thin, if the sensing electrode is an etched pattern, the light reflection between the etched area and the non-etched area is different, and the appearance of the touch panel has optical problems such as chromatic aberration. Therefore, an optical compensation layer is provided in the touch panel to improve the optical problem.

然而,目前具有光學補償層的觸控面板經紫外光環境下使用有機會產生觸控不靈敏的問題,因此亟需新的觸控面板結構以克服上述問題。 However, the current touch panel with an optical compensation layer has the opportunity to generate touch insensitivity when used in an ultraviolet light environment, so a new touch panel structure is needed to overcome the above problems.

由於目前具有光學補償層的觸控面板在紫外光環境下使用會機會產生觸控不靈敏的問題,因此本發明一實施例提供之觸控面板,包括:蓋板;折射率匹配層,位於蓋板下;觸控裝置,位於折射率匹配層下;以及光學匹配層,位於觸控 裝置下,其中折射率匹配層包括第一低折射率介電層與第一高折射率介電層,其中第一低折射率介電層直接接觸觸控裝置之上表面,且第一高折射率介電層位於第一低折射率介電層與蓋板之間,其中光學匹配層包括第二低折射率介電層與第二高折射率介電層,其中第二低折射率介電層直接接觸觸控裝置之下表面,並位於觸控裝置與第二高折射率介電層之間,其中第二高折射率介電層的方阻值在照射紫外光後大於109歐姆每方。 The touch panel of the present invention provides a touch panel comprising: a cover plate; an index matching layer, located in the cover, because the touch panel of the optical compensation layer is used in an ultraviolet light environment. a lower touch panel is disposed under the index matching layer; and an optical matching layer is disposed under the touch device, wherein the index matching layer comprises a first low refractive index dielectric layer and a first high refractive index dielectric layer, wherein The first low refractive index dielectric layer directly contacts the upper surface of the touch device, and the first high refractive index dielectric layer is between the first low refractive index dielectric layer and the cap plate, wherein the optical matching layer includes the second low refractive index The dielectric layer and the second high refractive index dielectric layer, wherein the second low refractive index dielectric layer directly contacts the lower surface of the touch device and is located between the touch device and the second high refractive index dielectric layer, wherein The square resistance of the second high refractive index dielectric layer is greater than 10 9 ohms per square after exposure to ultraviolet light.

本發明一實施例提供之觸控顯示裝置,包括:上述之觸控面板;以及顯示面板,位於觸控面板下,其中觸控裝置包括:感測電極區;以及金屬走線區,位於感測電極區外圍;其中顯示面板包括:顯示區,實質上對應感測電極區;以及邊框區,對應金屬走線區。 A touch display device according to an embodiment of the present invention includes: the touch panel; and a display panel disposed under the touch panel, wherein the touch device includes: a sensing electrode region; and a metal trace region located at the sensing The periphery of the electrode region; wherein the display panel comprises: a display area substantially corresponding to the sensing electrode area; and a border area corresponding to the metal routing area.

由於本揭露的第二高折射率介電層在照射紫外光後方阻值仍大於109歐姆每方,減少光學膠和第二高折射率介電層照射紫外光後所產生的自由載子對後端處理器偵測觸控裝置時的影響,增加觸控的靈敏度。 Since the second high refractive index dielectric layer of the present disclosure is still greater than 10 9 ohms per square after the ultraviolet light is irradiated, the free carrier pair generated by the optical glue and the second high refractive index dielectric layer is irradiated with ultraviolet light. The back-end processor detects the influence of the touch device and increases the sensitivity of the touch.

10‧‧‧觸控面板 10‧‧‧Touch panel

21A、23A‧‧‧觸控電極 21A, 23A‧‧‧ touch electrodes

21B、23B‧‧‧連接電極 21B, 23B‧‧‧ connection electrode

27A、27B‧‧‧接觸孔 27A, 27B‧‧‧ contact holes

24‧‧‧金屬走線 24‧‧‧Metal routing

25‧‧‧介電層 25‧‧‧Dielectric layer

40‧‧‧觸控顯示裝置 40‧‧‧Touch display device

45‧‧‧顯示面板 45‧‧‧ display panel

45A‧‧‧顯示區 45A‧‧‧ display area

45B‧‧‧邊框區 45B‧‧‧Border area

47‧‧‧光學膠 47‧‧‧Optical adhesive

100‧‧‧蓋板 100‧‧‧ cover

101‧‧‧折射率匹配層 101‧‧‧index matching layer

101H、107H‧‧‧高折射率介電層 101H, 107H‧‧‧high refractive index dielectric layer

101L、107L‧‧‧低折射率介電層 101L, 107L‧‧‧ low refractive index dielectric layer

103‧‧‧觸控裝置 103‧‧‧Touch device

103A‧‧‧感測電極區 103A‧‧‧Sensing electrode area

103B‧‧‧金屬走線區 103B‧‧‧Metal wiring area

107‧‧‧光學匹配層 107‧‧‧Optical matching layer

109‧‧‧透明保護層 109‧‧‧Transparent protective layer

301‧‧‧抗反射層 301‧‧‧Anti-reflective layer

第1圖係本發明一實施例中,觸控面板之剖視圖。 1 is a cross-sectional view of a touch panel in an embodiment of the present invention.

第2A至2D圖係本發明一實施例中,觸控裝置之製程上視圖。 2A to 2D are top views of a process of the touch device in an embodiment of the present invention.

第3圖係本發明一實施例中,觸控面板之剖視圖。 Figure 3 is a cross-sectional view of a touch panel in accordance with an embodiment of the present invention.

第4圖係本發明一實施例中,觸控顯示裝置之剖視圖。 Figure 4 is a cross-sectional view of a touch display device in accordance with an embodiment of the present invention.

第5圖係本發明一實施例中,蓋板、反射層、與抗髒污層 之複合結構對不同波長之光的反射率。 Figure 5 is a cover plate, a reflective layer, and an anti-dirty layer in an embodiment of the present invention. The reflectivity of the composite structure for light of different wavelengths.

第6圖係本發明一實施例中,蓋板與折射率匹配層之複合結構對不同波長之光的反射率。 Figure 6 is a graph showing the reflectance of a composite structure of a cover plate and an index matching layer for light of different wavelengths in an embodiment of the present invention.

第7圖係本發明一實施例中,透明導電圖案與光學匹配層之複合結構對不同波長之光的反射率。 Figure 7 is a graph showing the reflectance of a composite structure of a transparent conductive pattern and an optical matching layer for light of different wavelengths in an embodiment of the present invention.

下面內容將結合圖式與具體實施方式,以進一步詳述本發明。接下來將提供不同實施例以實施本發明。可以理解的是,這些實施例僅用以說明而非侷限本發明。此外,第一元件形成於第二元件上,指的是第一元件與第二元件可直接接觸,或具有額外元件夾設於第一元件與第二元件之間(無直接接觸)。另外,下述方向性用語「之上」及「之下」,僅用以說明圖式中的相對位置。當圖式中的裝置旋轉至其他方向,則可能具有其他相對方向。再者,為使圖式清晰簡潔,元件不一定依實際比例繪示。 The following will be combined with the drawings and specific embodiments to further detail the present invention. Different embodiments will be provided next to practice the invention. It is to be understood that the examples are merely illustrative and not limiting. Furthermore, the first element is formed on the second element, meaning that the first element is in direct contact with the second element or has an additional element interposed between the first element and the second element (without direct contact). In addition, the following directional terms "above" and "below" are used only to describe the relative positions in the drawings. When the device in the drawing is rotated to other directions, there may be other relative directions. Furthermore, in order to make the drawings clear and concise, the components are not necessarily drawn to the actual scale.

第1圖係本發明一實施例中,觸控面板10之剖視圖。觸控面板10具有蓋板100、位於蓋板100下之折射率匹配層101、位於折射率匹配層101下的觸控裝置103、與位於觸控裝置103下之光學匹配層107。蓋板100可為強化蓋板,除了用來承載觸控裝置103之外,更可提供堅硬的保護作用。在一實施例中,強化蓋板之形成方法可為化學離子交換或類似製程。在一實施例中,蓋板100係透明板材如玻璃或高分子材料。在另一實施例中,蓋板100為丙烯酸酯類的熱塑性塑膠材料。此外,蓋板100的厚度可介於約0.2mm至2.0mm之間。若蓋板100的厚 度過厚,則會增加觸控面板10的重量與體積。若蓋板100的厚度過薄,可能無法支撐形成其下之觸控裝置103與其他單元。 1 is a cross-sectional view of a touch panel 10 in an embodiment of the present invention. The touch panel 10 has a cover 100 , an index matching layer 101 under the cover 100 , a touch device 103 under the index matching layer 101 , and an optical matching layer 107 under the touch device 103 . The cover plate 100 can be a reinforced cover plate, and in addition to carrying the touch device 103, it can provide a hard protection. In one embodiment, the method of forming the reinforced cover may be a chemical ion exchange or the like. In one embodiment, the cover 100 is a transparent sheet such as a glass or polymeric material. In another embodiment, the cover plate 100 is an acrylate-based thermoplastic plastic material. Additionally, the thickness of the cover plate 100 can be between about 0.2 mm and 2.0 mm. If the cover plate 100 is thick When the thickness is too large, the weight and volume of the touch panel 10 are increased. If the thickness of the cover 100 is too thin, the touch device 103 and other units underneath may not be supported.

在第1圖中,折射率匹配層101包括低折射率介電層101L與高折射率介電層101H之多層結構。如第1圖所示,低折射率介電層101L直接接觸觸控裝置103之上表面,且第一高折射率介電層101H位於低折射率介電層101L與蓋板100之間。雖然第1圖之折射率匹配層101僅為雙層結構,但應理解其可為更多層的結構(由下至上)可為101L/101H/101L/101H...的多層結構(最下層為低折射率介電層101L,而最上層為高折射率介電層101H),其層數可為2至50之間。上述折射率匹配層101係用以避免在強環境光照射下,觸控裝置103之感測電極圖案干擾顯示裝置顯示之圖像的問題。在本發明一實施例中,低折射率介電層101L之厚度介於25nm至35nm,且折射率介於1.2至1.5之間;高折射率介電層101H之厚度介於5nm至15mm,且折射率介於1.8至2.5之間。舉例來說,低折射率介電層101L可為氧化矽,而高折射率介電層101H可為氧化鈮(例如Nb2Ox)或氮化矽(例如Si3N4)。若低折射率介電層101L或高折射率介電層101H之厚度過厚或過薄(或折射率過高或過低),則無法達到抗反射的效果,即使用者在陽光下可能會目視到觸控裝置103之感測電極圖案。 In FIG. 1, the index matching layer 101 includes a multilayer structure of a low refractive index dielectric layer 101L and a high refractive index dielectric layer 101H. As shown in FIG. 1 , the low refractive index dielectric layer 101L directly contacts the upper surface of the touch device 103 , and the first high refractive index dielectric layer 101H is located between the low refractive index dielectric layer 101L and the cap plate 100 . Although the index matching layer 101 of FIG. 1 is only a two-layer structure, it should be understood that the structure of more layers (from bottom to top) may be a multilayer structure of 101L/101H/101L/101H... The low refractive index dielectric layer 101L and the uppermost layer is the high refractive index dielectric layer 101H), and the number of layers may be between 2 and 50. The above-mentioned refractive index matching layer 101 is used to avoid the problem that the sensing electrode pattern of the touch device 103 interferes with the image displayed by the display device under strong ambient light illumination. In an embodiment of the invention, the low refractive index dielectric layer 101L has a thickness between 25 nm and 35 nm and a refractive index between 1.2 and 1.5; the high refractive index dielectric layer 101H has a thickness between 5 nm and 15 mm, and The refractive index is between 1.8 and 2.5. For example, the low refractive index dielectric layer 101L may be yttrium oxide, and the high refractive index dielectric layer 101H may be yttrium oxide (eg, Nb2Ox) or tantalum nitride (eg, Si3N4). If the thickness of the low refractive index dielectric layer 101L or the high refractive index dielectric layer 101H is too thick or too thin (or the refractive index is too high or too low), the antireflection effect cannot be achieved, that is, the user may be in the sun. The sensing electrode pattern of the touch device 103 is visually observed.

第1圖之觸控裝置103分為感測電極區103A,與位於感測電極區103A外圍之金屬走線區103B。第2A-2D圖係本發明一實施例中,觸控裝置103之製程上視圖。如第2A圖所示,形成觸控電極21A與23A及連接電極23B於低折射率介電層 101L上的感測電極區103A。同一行之觸控電極23A之間,具有連接電極23B相連。觸控電極21A各自獨立而彼此不相連,且未接觸觸控電極23A與連接電極23B。雖然下述實施例及圖式中,觸控電極21A與23A為面積相同的菱形,但應理解觸控電極亦可採用其他形狀如三角形、四角形、六角形、或其他可能的形狀,且不一定面積相同,端視需要而定。在本發明一實施例中,觸控電極21A與23A與連接電極23B可為透明導電材料如銦錫氧化物(ITO)、銦鋅氧化物(IZO)、摻氟氧化錫(FTO)、摻鋁氧化鋅(AZO)、摻鎵氧化鋅(GZO)、或類似物,其形成方法可為濺鍍整片透明導電材料後光微影,或者直接網印形成觸控電極圖案。接著形成金屬走線24於金屬走線區103B中,其連接至末端之觸控電極21A上。上述觸控電極21A與23A與連接電極23B(即透明導電圖案)之厚度介於20nm至30nm之間。上述透明導電圖案之折射率大於低折射率介電層101L與低折射率介電層107L之折射率,高折射率介電層101H之折射率大於低折射率介電層101L與蓋板100之折射率,且高折射率介電層107H之折射率大於低折射率介電層107L之折射率。如此一來,觸控面板10之多層結構的折射率排列為鋸齒狀的高/低/高/低/高/低。 The touch device 103 of FIG. 1 is divided into a sensing electrode region 103A and a metal wiring region 103B located at the periphery of the sensing electrode region 103A. 2A-2D is a top view of the process of the touch device 103 in an embodiment of the present invention. As shown in FIG. 2A, the touch electrodes 21A and 23A and the connection electrode 23B are formed on the low refractive index dielectric layer. Sensing electrode region 103A on 101L. Between the touch electrodes 23A of the same row, the connection electrodes 23B are connected. The touch electrodes 21A are independent from each other and are not connected to each other, and are not in contact with the touch electrodes 23A and the connection electrodes 23B. In the following embodiments and figures, the touch electrodes 21A and 23A are diamonds having the same area, but it should be understood that the touch electrodes may adopt other shapes such as a triangle, a quadrangle, a hexagon, or other possible shapes, and are not necessarily The area is the same, depending on the needs. In an embodiment of the invention, the touch electrodes 21A and 23A and the connection electrode 23B may be transparent conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), and aluminum doped. Zinc oxide (AZO), gallium-doped zinc oxide (GZO), or the like may be formed by sputtering a whole transparent conductive material, or directly forming a touch electrode pattern by screen printing. Next, a metal trace 24 is formed in the metal trace region 103B, which is connected to the touch electrode 21A at the end. The thickness of the touch electrodes 21A and 23A and the connection electrode 23B (ie, the transparent conductive pattern) is between 20 nm and 30 nm. The refractive index of the transparent conductive pattern is greater than the refractive index of the low refractive index dielectric layer 101L and the low refractive index dielectric layer 107L, and the refractive index of the high refractive index dielectric layer 101H is greater than that of the low refractive index dielectric layer 101L and the cover 100. The refractive index, and the refractive index of the high refractive index dielectric layer 107H is greater than the refractive index of the low refractive index dielectric layer 107L. As a result, the refractive index of the multilayer structure of the touch panel 10 is arranged in a zigzag shape of high/low/high/low/high/low.

接著如第2B圖所示,形成絕緣層25於低折射率介電層101L、觸控電極21A與23A、連接電極23B、與金屬走線24上。絕緣層25之材質可為無機材料,例如氧化矽或氮化矽,或是有機材料,例如光阻,其形成方法可為化學氣相沉積製程、物理氣相沉積製程、或濺鍍。 Next, as shown in FIG. 2B, an insulating layer 25 is formed on the low refractive index dielectric layer 101L, the touch electrodes 21A and 23A, the connection electrode 23B, and the metal trace 24. The material of the insulating layer 25 may be an inorganic material such as yttrium oxide or tantalum nitride, or an organic material such as a photoresist, which may be formed by a chemical vapor deposition process, a physical vapor deposition process, or a sputtering process.

接著如第2C圖所示,形成接觸孔27A穿過末端之觸 控電極21A上的絕緣層25,並形成接觸孔27B穿過觸控電極21A兩側上的絕緣層25。形成接觸孔27A與27B之方法可為微影與蝕刻製程。接著如2D圖所示,形成連接電極21B與金屬走線24。在本發明一實施例中,連接電極21B與金屬走線24可為金屬如銀、銅、鋁、上述之合金、或上述之多層結構,其形成方法可為濺鍍整層金屬後光微影,或直接網印連接電極圖案。金屬走線區103B中的金屬走線24可進一步連接至接墊(未圖示)以電性連接至外部電路。可以理解的是,觸控電極23A亦可採用上述走線的設計,以電性連接至接墊與外部電路。連接電極21B位於絕緣層25上,經由接觸孔27B電性連接相鄰的觸控電極21A,使同一列的觸控電極21A電性相連。一般而言,為了避免高反射之金屬走線24反射環境光,通常會額外形成遮光元件(未圖示)對應金屬走線區103B。此遮光元件可為常見之黑色矩陣(BM),其可位於金屬走線24與低折射率介電層101L之間、位於金屬走線與後述之低折射率介電層107L之間、或其他適當位置。 Then, as shown in FIG. 2C, the contact hole 27A is formed to pass through the end. The insulating layer 25 on the electrode 21A is controlled, and the contact hole 27B is formed to pass through the insulating layer 25 on both sides of the touch electrode 21A. The method of forming the contact holes 27A and 27B may be a lithography and etching process. Next, as shown in FIG. 2D, the connection electrode 21B and the metal trace 24 are formed. In an embodiment of the invention, the connection electrode 21B and the metal trace 24 may be a metal such as silver, copper, aluminum, the above alloy, or the above-mentioned multilayer structure, which may be formed by sputtering a whole layer of metal after light lithography. , or directly screen printed electrode pattern. The metal traces 24 in the metal trace region 103B can be further connected to pads (not shown) for electrical connection to external circuitry. It can be understood that the touch electrode 23A can also be designed to be electrically connected to the pad and the external circuit. The connection electrode 21B is located on the insulating layer 25, and is electrically connected to the adjacent touch electrodes 21A via the contact holes 27B to electrically connect the touch electrodes 21A of the same column. In general, in order to prevent the highly reflective metal trace 24 from reflecting ambient light, a light-shielding element (not shown) is additionally formed corresponding to the metal trace region 103B. The shading element can be a common black matrix (BM), which can be located between the metal trace 24 and the low refractive index dielectric layer 101L, between the metal trace and the low refractive index dielectric layer 107L described later, or other The right place.

回到第1圖,光學匹配層107包含低折射率介電層107L與高折射率介電層107H。低折射率介電層107L直接接觸觸控裝置103之下表面,並位於觸控裝置103與高折射率介電層107H之間。上述光學匹配層107係用以與感測電極區103A形成光學匹配。當環境光穿透蓋板100及感測電極區103A後反射出一反射光時,可調和感測電極區103A中電極圖案與無電極圖案區的反射光色調差異。如此一來,光學匹配層107可補償電極圖案與無電極圖案區之間的反射率差異,使觸控面板10反射環 境光的的反射光色調接近自然光,而不會偏藍或偏黃。在本發明一實施例中,低折射率介電層107L之厚度介於15nm至35nm且折射率介於1.2至1.5之間,高折射率介電層107H之厚度介於10nm至20nm且折射率介於1.8至2.5之間。舉例來說,低折射率介電層107L可為氧化矽,而高折射率介電層107H可為氮化矽。若低折射率介電層107L或高折射率介電層107H之厚度過厚或過薄(或折射率過高或過低),則無法達到調整反射光色調的效果,即使用者在陽光下可能會因感測電極區中電極圖案與無電極圖案區的反射率差異,看到偏藍或偏黃的影像。 Returning to Fig. 1, the optical matching layer 107 includes a low refractive index dielectric layer 107L and a high refractive index dielectric layer 107H. The low refractive index dielectric layer 107L directly contacts the lower surface of the touch device 103 and is located between the touch device 103 and the high refractive index dielectric layer 107H. The optical matching layer 107 is used to form an optical match with the sensing electrode region 103A. When the ambient light penetrates the cover plate 100 and the sensing electrode region 103A and reflects a reflected light, the reflected pattern of the electrode pattern in the adjustable electrode region 103A and the electrodeless pattern region are different in hue. In this way, the optical matching layer 107 can compensate for the difference in reflectance between the electrode pattern and the electrodeless pattern region, so that the touch panel 10 reflects the ring. The reflected light of the ambient light is close to natural light, and is not blue or yellowish. In an embodiment of the invention, the low refractive index dielectric layer 107L has a thickness between 15 nm and 35 nm and a refractive index between 1.2 and 1.5, and the high refractive index dielectric layer 107H has a thickness between 10 nm and 20 nm and a refractive index. Between 1.8 and 2.5. For example, the low refractive index dielectric layer 107L can be tantalum oxide and the high refractive index dielectric layer 107H can be tantalum nitride. If the thickness of the low refractive index dielectric layer 107L or the high refractive index dielectric layer 107H is too thick or too thin (or the refractive index is too high or too low), the effect of adjusting the color tone of the reflected light cannot be achieved, that is, the user is in the sunlight. A blue or yellowish image may be seen due to the difference in reflectance between the electrode pattern and the electrodeless pattern region in the sensing electrode region.

值得注意的是,高折射率介電層107H之後會經光學膠黏合至顯示裝置。若高折射率介電層107H採用氧化鈮等金屬氧化物,在高折射率介電層107H接觸光學膠且照射紫外線硬化的製程中,高折射率介電層107H(如氧化鈮)可能會還原成半導體,或者高折射率介電層107H的載子(電子或電洞)經過經過紫外光照射後從價帶(valence band)躍遷至傳導帶(conduction band),使得高折射率介電層107H的自由載子變多,且降低高折射率介電層107H的方阻值。再加上光學膠47(見第4圖)在長時間照射紫外光(約480J/cm2以上)後,光學膠47表面也有可能會產生自由載子(或是因為高折射率介電層107H的材質與光學膠47互相影響緣故),使得高折射率介電層107H與光學膠47之間的自由載子在觸控裝置103形成虛擬電容(virtual capacitor),影響後端處理器量測觸控裝置103是否遭觸帶電物接近的精確度。 It is worth noting that the high refractive index dielectric layer 107H is then optically bonded to the display device. If the high refractive index dielectric layer 107H is made of a metal oxide such as ruthenium oxide, the high refractive index dielectric layer 107H (such as yttrium oxide) may be reduced in a process in which the high refractive index dielectric layer 107H contacts the optical paste and is irradiated with ultraviolet light. The carrier (electron or hole) of the semiconductor or the high refractive index dielectric layer 107H is valence band transitioned to a conduction band after being irradiated with ultraviolet light, so that the high refractive index dielectric layer 107H The free carrier is increased, and the square resistance of the high refractive index dielectric layer 107H is lowered. In addition, after the optical glue 47 (see Fig. 4) is irradiated with ultraviolet light for a long time (about 480 J/cm 2 or more), the surface of the optical adhesive 47 may also generate a free carrier (or because of the high refractive index dielectric layer 107H). The material and the optical adhesive 47 interact with each other, so that the free carrier between the high refractive index dielectric layer 107H and the optical adhesive 47 forms a virtual capacitor in the touch device 103, which affects the back end processor measurement. Whether the control device 103 is exposed to the accuracy of the charged object.

因此高折射率介電層107H的材料選用,原則上被 照射紫外光後高折射率介電層107H的方阻值仍大於109歐姆每方(ohm per squre)(較佳實施例為大於1010歐姆每方),氮化矽符合在照射紫外光後方阻值仍保持在1010歐姆每方,因此以氮化矽做為高折射率介電層107H減少被照射紫外光後所產生的自由載子對後端處理器偵測觸控裝置時的影響,增加觸控的靈敏度。此外,由於低介電系數材料也有助於避免在紫外光照射下降低電阻值(或稱增加導電率),在某些實施例中,也可選用介電系數(dielectric value)比氧化鈮還低的材料當作高折射率介電層107H。除此之外,高折射率介電層101H也可選用在照射紫外光後方阻值仍大於109歐姆每方的材料(例如Si3N4),也可選用低介電系數的材料(例如K值(dielectric constant)為20以下)。 Therefore, the material of the high refractive index dielectric layer 107H is selected. In principle, the square resistance of the high refractive index dielectric layer 107H after being irradiated with ultraviolet light is still greater than 10 9 ohm per squre (the preferred embodiment is greater than 10) 10 ohms per square), the tantalum nitride conforms to the resistance after the ultraviolet light is still maintained at 10 10 ohms per square, so the use of tantalum nitride as the high refractive index dielectric layer 107H reduces the freedom generated by the ultraviolet light. The effect of the carrier on the detection of the touch device by the back-end processor increases the sensitivity of the touch. In addition, since the low dielectric constant material also helps to reduce the resistance value (or increase the conductivity) under ultraviolet light irradiation, in some embodiments, the dielectric value may also be lower than that of yttrium oxide. The material is treated as a high refractive index dielectric layer 107H. In addition, the high-refractive-index dielectric layer 101H can also be used for materials with a resistance value greater than 10 9 ohms (for example, Si3N4) after ultraviolet light irradiation, or a material with a low dielectric constant (for example, K value ( The dielectric constant) is 20 or less).

值得注意的是,金屬走線區103B之金屬走線24具有一定厚度,如第1圖所示。如此一來,光學匹配層107對應金屬走線區103B之厚度,將小於光學匹配層107對應感測電極區103A之厚度。在某些情況下,光學匹配層107對應金屬走線區103B之厚度小於10nm。在這種情況下,光學匹配層107無法有效保護金屬走線24。如此一來,可採用透明保護層109(如光油)保護金屬走線24。在本發明一實施例中,透明保護層109之厚度介於20至30nm之間。若透明保護層109之厚度過薄,則無法進一步保護金屬走線24。若透明保護層109之厚度過厚,則增加材料成本。值得注意的是,上述透明保護層109僅對應金屬走線24而不對應感測電極區103A。若透明保護層109整片地形成於光學匹配層107上,則會破壞光學匹配的效果,造成影像 偏藍或偏黃。 It is worth noting that the metal traces 24 of the metal trace region 103B have a certain thickness, as shown in FIG. As such, the thickness of the optical matching layer 107 corresponding to the metal wiring region 103B will be smaller than the thickness of the optical matching layer 107 corresponding to the sensing electrode region 103A. In some cases, the thickness of the optical matching layer 107 corresponding to the metal wiring region 103B is less than 10 nm. In this case, the optical matching layer 107 cannot effectively protect the metal traces 24. In this way, the metal trace 24 can be protected by a transparent protective layer 109 such as varnish. In an embodiment of the invention, the transparent protective layer 109 has a thickness of between 20 and 30 nm. If the thickness of the transparent protective layer 109 is too thin, the metal trace 24 cannot be further protected. If the thickness of the transparent protective layer 109 is too thick, the material cost is increased. It should be noted that the transparent protective layer 109 only corresponds to the metal trace 24 and does not correspond to the sensing electrode region 103A. If the transparent protective layer 109 is formed entirely on the optical matching layer 107, the optical matching effect is destroyed, resulting in an image. Blue or yellowish.

在本發明另一實施例中,可在蓋板100上形成抗反射層301(如第3圖所示)以進一步降低環境光對影像的影響,且其折射率高於蓋板100之折射率。 In another embodiment of the present invention, an anti-reflection layer 301 (shown in FIG. 3) may be formed on the cover plate 100 to further reduce the influence of ambient light on the image, and the refractive index thereof is higher than the refractive index of the cover plate 100. .

上述折射率匹配層101可有效遮掩感測電極區103A中的電極圖案,並降低環境光入射的光反射率。上述光學匹配層107除了可保護感測電極區103A外,還可改善影像色偏的問題。另一方面,由於光學匹配層107中的高折射率介電層107H在照射紫外線後方阻值仍大於109歐姆每方,可避免後端處理器誤判斷觸控裝置103的電性大小。另一方面,透明保護層109可進一步保護金屬走線24不致因薄層的光學匹配層107導致電性不良、金屬走線脫落、或金屬走線斷裂等問題。 The above-described refractive index matching layer 101 can effectively mask the electrode pattern in the sensing electrode region 103A and reduce the light reflectance of the ambient light incident. In addition to protecting the sensing electrode region 103A, the optical matching layer 107 described above can also improve the image color shift. On the other hand, since the high refractive index dielectric layer 107H in the optical matching layer 107 is still greater than 10 9 ohms per square after the ultraviolet ray is irradiated, the back end processor can be prevented from erroneously determining the electrical magnitude of the touch device 103. On the other hand, the transparent protective layer 109 can further protect the metal traces 24 from causing problems such as poor electrical properties, metal traces falling off, or metal trace breakage due to the thin optical matching layer 107.

在本發明一實施例中,上述觸控面板10之形成方式如下:提供蓋板100,形成折射率匹配層101於蓋板100上,形成觸控裝置103於折射率匹配層101上,以及形成光學匹配層107於觸控裝置103上。在本發明其他實施例中,可進一步形成透明保護層109於光學匹配層107上,且透明保護層109僅對應金屬走線24而未對應觸控裝置103之感應電極區103A。 In one embodiment of the present invention, the touch panel 10 is formed in the following manner: a cover 100 is provided, an index matching layer 101 is formed on the cover 100, and the touch device 103 is formed on the index matching layer 101, and is formed. The optical matching layer 107 is on the touch device 103. In other embodiments of the present invention, the transparent protective layer 109 may be further formed on the optical matching layer 107, and the transparent protective layer 109 only corresponds to the metal trace 24 and does not correspond to the sensing electrode region 103A of the touch device 103.

上述觸控面板10(如第1圖所示)可搭配顯示面板45,形成觸控顯示裝置40(如第4圖所示)。顯示面板45具有顯示區45A,與邊框區45B。顯示區45A通常具有多個畫素,其控制單元(如TFT)經由閘極線、共同電極線、與資料線連接至邊框區45B的控制電路。上述顯示面板45可藉由光學膠47貼合至觸控面板10,且光學膠47直接接觸高折射率介電層107H。由於 高折射率介電層107H採用接觸光學膠47及照射紫外線也高折射率介電層107H的方阻值大於109歐姆每方的材質(如氮化矽),可避免光學膠47及照射紫外線造成觸控裝置103電性失效。上述顯示區45A實質上對應感測電極區103A,而邊框區45B對應金屬走線區103B。在本發明一實施例中,顯示面板45可為液晶顯示器(LCD)。在另一實施例中,顯示面板45亦可為電子紙、電子閱讀器、電致發光顯示器(ELD)、有機電致發光顯示器(OELD)、真空螢光顯示器(VFD)、發光二極體(LED)、陰極射線管(CRT)、電漿顯示面板(PDP)、數位光學處理器(DLP)、矽基板上液晶顯示器(LCoS)、有機發光二極體(OLED)、表面傳導電子發射顯示器(SED)、場發射顯示器(FED)、量子點雷射電視、液晶雷射電視、鐵電液晶顯示器(FLD)、干涉測量調節顯示器(iMOD)、厚膜介電電致發光器(TDEL)、量子點發光二極體(QD-LED)、屈伸畫素顯示器(TPD)、有機發光電晶體(OLET)、光致變色顯示器、雷射螢光體顯示器(LPD)、或類似物。上述觸控顯示裝置40可包括但不限於應用在互動廣告系統、賣場優惠訂購系統、門禁識別系統、資訊查詢系統、提款系統、或可攜式行動裝置。 The touch panel 10 (shown in FIG. 1) can be combined with the display panel 45 to form the touch display device 40 (as shown in FIG. 4). The display panel 45 has a display area 45A and a bezel area 45B. The display area 45A generally has a plurality of pixels, and its control unit (such as a TFT) is connected to the control circuit of the bezel area 45B via a gate line, a common electrode line, and a data line. The display panel 45 can be attached to the touch panel 10 by the optical adhesive 47, and the optical adhesive 47 directly contacts the high refractive index dielectric layer 107H. Since the high refractive index dielectric layer 107H is made of the contact optical adhesive 47 and the ultraviolet ray is also used, the high refractive index dielectric layer 107H has a square resistance value greater than 10 9 ohms per square material (such as tantalum nitride), thereby avoiding the optical adhesive 47 and the irradiation. The ultraviolet light causes the touch device 103 to fail electrically. The display area 45A substantially corresponds to the sensing electrode area 103A, and the frame area 45B corresponds to the metal wiring area 103B. In an embodiment of the invention, the display panel 45 can be a liquid crystal display (LCD). In another embodiment, the display panel 45 can also be an electronic paper, an electronic reader, an electroluminescent display (ELD), an organic electroluminescent display (OELD), a vacuum fluorescent display (VFD), a light emitting diode ( LED), cathode ray tube (CRT), plasma display panel (PDP), digital optical processor (DLP), liquid crystal display (LCoS) on a substrate, organic light emitting diode (OLED), surface conduction electron emission display ( SED), Field Emission Display (FED), Quantum Point Laser TV, Liquid Crystal Laser TV, Ferroelectric Liquid Crystal Display (FLD), Interferometric Adjustment Display (iMOD), Thick Film Dielectric Electroluminescent (TDEL), Quantum Dots Light-emitting diode (QD-LED), flexographic display (TPD), organic light-emitting transistor (OLET), photochromic display, laser fluorescent display (LPD), or the like. The touch display device 40 may include, but is not limited to, an interactive advertising system, a store preferential ordering system, an access control identification system, an information inquiry system, a withdrawal system, or a portable mobile device.

為了讓本發明之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉數實施例配合所附圖示,作詳細說明如下: The above and other objects, features, and advantages of the present invention will become more apparent and understood.

實施例 Example

實施例1 Example 1

取玻璃基板作為第3圖所示之蓋板100,並於蓋板100上依 序形成14.5nm厚之高折射材料(例如Ti3O5)、24.5nm厚之低折射材料(例如SiO2)、110nm之高折射材料(例如Ti3O5)、與84nm之低折射材料(例如SiO2)作為抗反射層301,並形成14nm之抗髒污層於抗反射層301上,抗髒污層可以是氟聚醚類材料,例如全氟聚醚有機矽氧烷。上述結構對應不同波長之光的反射率如第5圖所示。 Taking the glass substrate as the cover 100 shown in FIG. 3, and depending on the cover 100 Forming a 14.5 nm thick high refractive material (such as Ti3O5), a 24.5 nm thick low refractive material (such as SiO2), a 110 nm high refractive material (such as Ti3O5), and a 84 nm low refractive material (such as SiO2) as an antireflection layer. 301, and a 14 nm anti-staining layer is formed on the anti-reflective layer 301, and the anti-dirty layer may be a fluoropolyether material such as a perfluoropolyether organic decane. The reflectance of the above structure corresponding to light of different wavelengths is as shown in Fig. 5.

實施例2 Example 2

取玻璃基板作為第1圖所示之蓋板100,並於蓋板100上依序形成9nm之氧化鈮(作為高折射率介電層101H),與28nm之氧化矽(作為低折射率介電層101L)作為折射率匹配層101。上述結構對應不同波長之光的反射率如第6圖所示。 The glass substrate is taken as the cap plate 100 shown in FIG. 1 , and 9 nm of yttrium oxide (as the high refractive index dielectric layer 101H) and 28 nm of yttrium oxide (as the low refractive index dielectric) are sequentially formed on the cap plate 100. Layer 101L) serves as the index matching layer 101. The reflectance of the above structure corresponding to light of different wavelengths is as shown in Fig. 6.

實施例3 Example 3

取25nm厚之ITO層作為第1圖所示之觸控裝置103的透明導電圖案,並於透明導電圖案上依序形成32nm之氧化矽(作為低折射率介電層107L),與15nm之氮化矽(作為高折射率介電層107H)作為光學匹配層107。上述結構對應不同波長之光的反射率如第7圖所示。 Taking a 25 nm thick ITO layer as the transparent conductive pattern of the touch device 103 shown in FIG. 1 and sequentially forming 32 nm of yttrium oxide (as the low refractive index dielectric layer 107L) on the transparent conductive pattern, and 15 nm of nitrogen The ruthenium (as the high refractive index dielectric layer 107H) serves as the optical matching layer 107. The reflectance of the above structure corresponding to light of different wavelengths is as shown in Fig. 7.

由實施例2-3可知,折射率匹配層101與光學匹配層107對不同波長之光的反射率互補,兩者組合後可有效降低觸控面板之對環境光之反射率。 It can be seen from Embodiment 2-3 that the refractive index matching layer 101 and the optical matching layer 107 have complementary reflectances of light of different wavelengths, and the combination of the two can effectively reduce the reflectance of the touch panel to ambient light.

雖然本發明已以數個實施例揭露如上,然其並非用以限定本發明,任何本技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作任意之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the invention has been described above in terms of several embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can be modified and modified without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

10‧‧‧觸控面板 10‧‧‧Touch panel

24‧‧‧金屬走線 24‧‧‧Metal routing

100‧‧‧蓋板 100‧‧‧ cover

101‧‧‧折射率匹配層 101‧‧‧index matching layer

101H、107H‧‧‧高折射率介電層 101H, 107H‧‧‧high refractive index dielectric layer

101L、107L‧‧‧低折射率介電層 101L, 107L‧‧‧ low refractive index dielectric layer

103‧‧‧觸控裝置 103‧‧‧Touch device

103A‧‧‧感測電極區 103A‧‧‧Sensing electrode area

103B‧‧‧金屬走線區 103B‧‧‧Metal wiring area

107‧‧‧光學匹配層 107‧‧‧Optical matching layer

109‧‧‧透明保護層 109‧‧‧Transparent protective layer

Claims (13)

一種觸控面板,包括:一蓋板;一折射率匹配層,位於該蓋板下;一觸控裝置,位於該折射率匹配層下;以及一光學匹配層,位於該觸控裝置下,其中該折射率匹配層包括一第一低折射率介電層與一第一高折射率介電層,其中該第一低折射率介電層直接接觸該觸控裝置之上表面,且該第一高折射率介電層位於該第一低折射率介電層與該蓋板之間,其中該光學匹配層包括一第二低折射率介電層與一第二高折射率介電層,其中該第二低折射率介電層直接接觸該觸控裝置之下表面,並位於該觸控裝置與該第二高折射率介電層之間,其中該第二高折射率介電層的方阻值在照射紫外光後大於109歐姆每方。 A touch panel includes: a cover; an index matching layer under the cover; a touch device under the index matching layer; and an optical matching layer under the touch device, wherein The index matching layer includes a first low refractive index dielectric layer and a first high refractive index dielectric layer, wherein the first low refractive index dielectric layer directly contacts the upper surface of the touch device, and the first a high refractive index dielectric layer is disposed between the first low refractive index dielectric layer and the cap plate, wherein the optical matching layer comprises a second low refractive index dielectric layer and a second high refractive index dielectric layer, wherein The second low refractive index dielectric layer directly contacts the lower surface of the touch device and is located between the touch device and the second high refractive index dielectric layer, wherein the second high refractive index dielectric layer is The resistance is greater than 10 9 ohms per square after exposure to ultraviolet light. 如申請專利範圍第1項所述之觸控面板,其中該觸控裝置包括:一感測電極區;以及一金屬走線區,位於該感測電極區外圍。 The touch panel of claim 1, wherein the touch device comprises: a sensing electrode region; and a metal wiring region located at a periphery of the sensing electrode region. 如申請專利範圍第2項所述之觸控面板,更包括一透明保護層位於該光學匹配層下,且該透明保護層僅對應該金屬走線區而不對應該感測電極區。 The touch panel of claim 2, further comprising a transparent protective layer under the optical matching layer, and the transparent protective layer only corresponds to the metal wiring region and does not correspond to the sensing electrode region. 如申請專利範圍第3項述之觸控面板,其中該透明 保護層包括厚度介於20nm至30nm的光油。 Such as the touch panel described in claim 3, wherein the transparent The protective layer includes varnish having a thickness of from 20 nm to 30 nm. 如申請專利範圍第2項所述之觸控面板,其中該感測電極區包含厚度介於20nm至30nm的透明導電圖案。 The touch panel of claim 2, wherein the sensing electrode region comprises a transparent conductive pattern having a thickness of between 20 nm and 30 nm. 如申請專利範圍第5項所述之觸控面板,其中該透明導電圖案之折射率大於該第一低折射率介電層與該第二低折射率介電層之折射率,該第一高折射率介電層之折射率大於該第一低折射率介電層與該蓋板之折射率,且該第二高折射率介電層之折射率大於該第二低折射率介電層之折射率。 The touch panel of claim 5, wherein a refractive index of the transparent conductive pattern is greater than a refractive index of the first low refractive index dielectric layer and the second low refractive index dielectric layer, the first high The refractive index of the refractive index dielectric layer is greater than the refractive index of the first low refractive index dielectric layer and the cap plate, and the second high refractive index dielectric layer has a refractive index greater than the second low refractive index dielectric layer Refractive index. 如申請專利範圍第1項所述之觸控面板,其中該第一低折射率介電層之厚度介於25nm至35nm且折射率介於1.2至1.5之間,且該第一高折射率介電層之厚度介於5nm至15nm且折射率介於1.8至2.5之間。 The touch panel of claim 1, wherein the first low refractive index dielectric layer has a thickness between 25 nm and 35 nm and a refractive index between 1.2 and 1.5, and the first high refractive index is interposed. The electrical layer has a thickness between 5 nm and 15 nm and a refractive index between 1.8 and 2.5. 如申請專利範圍第1項所述之觸控面板,其中該第一低折射率介電層包括氧化矽,且該第一高折射率介電層包括氧化鈮或氮化矽。 The touch panel of claim 1, wherein the first low refractive index dielectric layer comprises hafnium oxide, and the first high refractive index dielectric layer comprises hafnium oxide or tantalum nitride. 如申請專利範圍第1項所述之觸控面板,其中該第二低折射率介電層之厚度介於15nm至35nm且折射率介於1.2至1.5之間,且該第二高折射率介電層之厚度介於10nm至20nm且折射率介於1.8至2.5之間。 The touch panel of claim 1, wherein the second low refractive index dielectric layer has a thickness between 15 nm and 35 nm and a refractive index between 1.2 and 1.5, and the second high refractive index is interposed. The electrical layer has a thickness between 10 nm and 20 nm and a refractive index between 1.8 and 2.5. 如申請專利範圍第1項所述之觸控面板,其中該第二低折射率介電層包括氧化矽,且該第二高折射率介電層包括氮化矽。 The touch panel of claim 1, wherein the second low refractive index dielectric layer comprises ruthenium oxide and the second high refractive index dielectric layer comprises tantalum nitride. 如申請專利範圍第1項所述之觸控面板,更包括一 抗反射層位於該蓋板上,且該抗反射層之折射率大於該蓋板。 The touch panel of claim 1, further comprising a The anti-reflection layer is located on the cover plate, and the anti-reflection layer has a refractive index greater than the cover plate. 一種觸控顯示裝置,包括:申請專利範圍第1項所述之觸控面板;以及一顯示面板,位於該觸控面板下,其中該觸控裝置包括:一感測電極區;以及一金屬走線區,位於該感測電極區外圍;其中該顯示面板包括:一顯示區,實質上對應該感測電極區;以及一邊框區,對應該金屬走線區。 A touch display device comprising: the touch panel of claim 1; and a display panel under the touch panel, wherein the touch device comprises: a sensing electrode region; and a metal walk The line area is located at the periphery of the sensing electrode area; wherein the display panel comprises: a display area substantially corresponding to the sensing electrode area; and a border area corresponding to the metal routing area. 如申請專利範圍第12項所述之觸控顯示裝置,更包括一光學膠貼合該觸控面板與該顯示面板,且該光學膠直接接觸該第二高折射率介電層。 The touch display device of claim 12, further comprising an optical adhesive attached to the touch panel and the display panel, wherein the optical adhesive directly contacts the second high refractive index dielectric layer.
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TWM500302U (en) * 2014-08-18 2015-05-01 Unidisplay Inc Touch panel and touch display device
TWM521771U (en) * 2015-08-05 2016-05-11 宸鴻科技(廈門)有限公司 Touch panel and touch display apparatus

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TW201706791A (en) 2017-02-16
TWM521771U (en) 2016-05-11
CN106445210B (en) 2023-07-11
CN106445210A (en) 2017-02-22

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