TWI548882B - Integrated circuit vertical probe card - Google Patents

Integrated circuit vertical probe card Download PDF

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TWI548882B
TWI548882B TW103126140A TW103126140A TWI548882B TW I548882 B TWI548882 B TW I548882B TW 103126140 A TW103126140 A TW 103126140A TW 103126140 A TW103126140 A TW 103126140A TW I548882 B TWI548882 B TW I548882B
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vertical
integrated circuit
glass sheet
probe card
flexible
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TW103126140A
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Chinese (zh)
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TW201604550A (en
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林君明
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中華大學
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Description

積體電路垂直式探針卡Integrated circuit vertical probe card

本揭露係關於一種積體電路垂直式探針卡。 The present disclosure relates to an integrated circuit vertical probe card.

晶圓上的積體電路在製造完成後,會進行測試,以期將不良品(Bad Die)在封裝前即予剔除,避免不良晶粒進入封裝,造成不必要的成本增加。 After the fabrication of the integrated circuit on the wafer, it will be tested in order to remove the Bad Die before packaging to avoid the bad die entering the package, resulting in unnecessary cost increase.

通常待測晶圓,處在80~150℃之高溫環境下,12吋矽晶圓(熱膨脹係數(CTE)為2.8ppm/K)為例,晶圓中心處至最外緣,就有23~44(μm)之橫向膨脹量,而以FR-4材料(CTE為18ppm/K)為基材所製作的針測卡,會有150~283(μm)之橫向膨脹量。此溫度效應會嚴重影響針測卡探針,與待測晶圓鋁墊(Al pad)的對準精度。 Generally, the wafer to be tested is in a high temperature environment of 80 to 150 ° C, and a 12-inch wafer (thermal expansion coefficient (CTE) of 2.8 ppm/K) is taken as an example. From the center of the wafer to the outermost edge, there are 23~ The amount of lateral expansion of 44 (μm), and the needle card made of FR-4 material (CTE 18ppm / K) as the substrate, there will be a lateral expansion of 150 ~ 283 (μm). This temperature effect can seriously affect the alignment accuracy of the probe card probe and the aluminum pad (Al pad) to be tested.

此外,現有針測卡的探針,使用堅硬的金屬材料,容易刮傷待測晶圓焊墊(Pads),或位於凸塊下方的金屬層。 In addition, the probes of the existing card test cards, using a hard metal material, are liable to scratch the pads to be tested (Pads) or the metal layer under the bumps.

有鑑於上述問題,本專利諸實施例,分別揭示新的垂直式探針卡。 In view of the above problems, the patent embodiments of the present invention respectively disclose a new vertical probe card.

本發明一實施例的積體電路垂直式探針卡包含:一第一軟性玻璃片、複數第一垂直導通孔、複數第一導電高分子接點、一第二軟性玻璃片、複數第二垂直導通孔、複數第二導電高分子接點、至少一第三軟性玻璃片、複數導線,以及複數第三垂直導通孔。複數第一垂直導通孔,形成於第一軟性玻璃片上。複數第一導電高分子接點,設置於第一軟性玻璃片上。複數第一導電高分子接點,對應電性連接該些第一垂直導通孔。複數第二垂直導通孔,形成於第二軟性玻璃上。複數第二導電高分子接點,形成於第二軟性玻璃片上。複數第二垂直導通孔,對應電性連接該些第二 垂直導通孔。該些第一導電高分子接點,與該些第二導電高分子接點的配置不同。至少一第三軟性玻璃片,設置在第一軟性玻璃片與第二軟性玻璃片之間。第三軟性玻璃片直接與第一軟性玻璃片,與第二軟性玻璃片結合。複數導線與複數第三垂直導通孔,形成於第三軟性玻璃片上。複數導線與複數第三垂直導通孔,使各第一導電高分子接點與對應的第二導電高分子接點電性相連。 The integrated circuit probe card of an integrated circuit according to an embodiment of the invention comprises: a first flexible glass piece, a plurality of first vertical through holes, a plurality of first conductive polymer contacts, a second flexible glass piece, and a plurality of second vertical a via hole, a plurality of second conductive polymer contacts, at least one third flexible glass piece, a plurality of wires, and a plurality of third vertical via holes. A plurality of first vertical via holes are formed on the first flexible glass sheet. The plurality of first conductive polymer contacts are disposed on the first flexible glass sheet. The plurality of first conductive polymer contacts are electrically connected to the first vertical via holes. A plurality of second vertical via holes are formed on the second soft glass. A plurality of second conductive polymer contacts are formed on the second flexible glass sheet. a plurality of second vertical via holes corresponding to the second electrical connection Vertical vias. The first conductive polymer contacts are different from the second conductive polymer contacts. At least one third flexible glass piece is disposed between the first soft glass piece and the second soft glass piece. The third soft glass piece is directly bonded to the first soft glass piece and to the second soft glass piece. The plurality of wires and the plurality of third vertical via holes are formed on the third flexible glass sheet. The plurality of wires and the plurality of third vertical via holes electrically connect the first conductive polymer contacts to the corresponding second conductive polymer contacts.

1‧‧‧積體電路垂直式探針卡 1‧‧‧Integrated circuit vertical probe card

11‧‧‧第一軟性玻璃片 11‧‧‧First soft glass

12‧‧‧第三軟性玻璃片 12‧‧‧ Third soft glass

13‧‧‧第二軟性玻璃片 13‧‧‧Second soft glass

14‧‧‧第一垂直導通孔 14‧‧‧First vertical via

15‧‧‧第一導電高分子接點 15‧‧‧First conductive polymer joint

16‧‧‧第二垂直導通孔 16‧‧‧Second vertical via

17‧‧‧第二導電高分子接點 17‧‧‧Second conductive polymer joint

18‧‧‧第三垂直導通孔 18‧‧‧ Third vertical via

19‧‧‧導線 19‧‧‧Wire

21‧‧‧接墊 21‧‧‧ pads

22‧‧‧接墊 22‧‧‧ pads

23‧‧‧接墊 23‧‧‧ pads

24‧‧‧接墊 24‧‧‧ pads

25‧‧‧接墊 25‧‧‧ pads

30‧‧‧開孔 30‧‧‧Opening

圖1為本發明一實施例之積體電路垂直式探針卡之上視示意圖。 1 is a top plan view of an integrated circuit probe card of an integrated circuit according to an embodiment of the invention.

圖2為沿圖1割面線1000-1000之剖視圖。 Figure 2 is a cross-sectional view taken along line 1000-1000 of Figure 1.

參照圖1與圖2所示,至少一實施例的積體電路垂直式探針卡1包含:一第一軟性玻璃片11、複數第一垂直導通孔(conductive vias)14、複數第一導電高分子接點15、一第二軟性玻璃片13、複數第二垂直導通孔16、複數第二導電高分子接點17、至少一第三軟性玻璃片12、複數第三垂直導通孔18,以及複數導線19。 Referring to FIG. 1 and FIG. 2, the integrated circuit probe card 1 of at least one embodiment includes: a first flexible glass sheet 11, a plurality of first vertical conductive vias 14, and a plurality of first conductive highs. a molecular contact 15, a second flexible glass sheet 13, a plurality of second vertical vias 16, a plurality of second conductive polymer contacts 17, at least a third flexible glass sheet 12, a plurality of third vertical vias 18, and a plurality Wire 19.

複數第一導電高分子接點15,形成於第一軟性玻璃片11上。複數第一垂直導通孔14對應複數第一導電高分子接點15,設置於第一軟性玻璃片11上。各第一垂直導通孔14,電性連接對應的第一導電高分子接點15。在一些實施例中,積體電路垂直式探針卡1,包含複數接墊21。複數接墊21對應複數第一導電高分子接點15。各第一垂直導通孔14,電性連接對應的接墊21,而各第一導電高分子接點15設置在對應的接墊21上。 A plurality of first conductive polymer contacts 15 are formed on the first flexible glass sheet 11. The plurality of first vertical via holes 14 are disposed on the first flexible glass sheet 11 corresponding to the plurality of first conductive polymer contacts 15 . Each of the first vertical via holes 14 is electrically connected to the corresponding first conductive polymer contact 15 . In some embodiments, the integrated circuit vertical probe card 1 includes a plurality of pads 21. The plurality of pads 21 correspond to a plurality of first conductive polymer contacts 15. Each of the first vertical via holes 14 is electrically connected to the corresponding pad 21 , and each of the first conductive polymer contacts 15 is disposed on the corresponding pad 21 .

複數第二導電高分子接點17,設置在第二軟性玻璃片13上。複數第二垂直導通孔16,對應複數第二導電高分子接點17。各第二垂直導通孔16電性連接對應的第二導電高分子接點17。在一些實施例中,積體電路垂直式探針卡1,包含複數接墊22。複數接墊22對應複數第二導電高分子接點17。各第二垂直導通孔16,電性連接對應的接墊22,而各第二 導電高分子接點17,設置在對應的接墊22上。 The plurality of second conductive polymer contacts 17 are disposed on the second flexible glass sheet 13. The plurality of second vertical vias 16 correspond to the plurality of second conductive polymer contacts 17. Each of the second vertical via holes 16 is electrically connected to the corresponding second conductive polymer contact 17 . In some embodiments, the integrated circuit vertical probe card 1 includes a plurality of pads 22. The plurality of pads 22 correspond to a plurality of second conductive polymer contacts 17. Each of the second vertical vias 16 is electrically connected to the corresponding pad 22, and each second The conductive polymer contacts 17 are disposed on the corresponding pads 22.

複數第一導電高分子接點15,和複數第二導電高分子接點17,配置的方式不同。複數第一導電高分子接點15和複數第二導電高分子接點17,用於電性連接測試機台和待測晶片或晶圓。複數第一導電高分子接點15,是配合測試機台設置,而複數第二導電高分子接點17,是配合待測晶片,或晶圓上的待測元件焊墊設置。複數第一導電高分子接點15,和複數第二導電高分子接點17,因較具有彈性,因此在測試時,待測元件上的焊墊或是凸塊下金屬層,不易受損。 The plurality of first conductive polymer contacts 15 and the plurality of second conductive polymer contacts 17 are arranged differently. The plurality of first conductive polymer contacts 15 and the plurality of second conductive polymer contacts 17 are electrically connected to the test machine and the wafer or wafer to be tested. The plurality of first conductive polymer contacts 15 are disposed in conjunction with the test machine, and the plurality of second conductive polymer contacts 17 are disposed in conjunction with the wafer to be tested or the device pads to be tested on the wafer. The plurality of first conductive polymer contacts 15 and the plurality of second conductive polymer contacts 17 are relatively elastic, so that the pads on the device to be tested or the metal layer under the bumps are not easily damaged during the test.

第三軟性玻璃片12,設置在第一軟性玻璃片11與第二軟性玻璃片13之間。第三軟性玻璃片12是直接接合於(bonded with)第一軟性玻璃片11,和第二軟性玻璃片13。在一些實施例中,第一軟性玻璃片11和第三軟性玻璃片12,是以陽極結合法(Anode Bonding)結合。第二軟性玻璃片13和第三軟性玻璃片12,是以陽極結合法結合。 The third flexible glass piece 12 is disposed between the first soft glass piece 11 and the second soft glass piece 13. The third flexible glass sheet 12 is directly bonded to the first soft glass sheet 11, and the second soft glass sheet 13. In some embodiments, the first flexible glass sheet 11 and the third flexible glass sheet 12 are bonded by Anode Bonding. The second flexible glass sheet 13 and the third soft glass sheet 12 are bonded by an anodic bonding method.

複數第三垂直導通孔18與複數導線19,使各第一導電高分子接點15,電性連接對應的第二導電高分子接點17。複數第三垂直導通孔18,形成於第三軟性玻璃片12。複數導線19形成於第三軟性玻璃片12上,並對應電性連接對應的第三垂直導通孔18,與第二垂直導通孔16。 The plurality of third vertical vias 18 and the plurality of wires 19 are electrically connected to the corresponding second conductive polymer contacts 17 . A plurality of third vertical via holes 18 are formed in the third flexible glass sheet 12. The plurality of wires 19 are formed on the third flexible glass sheet 12 and electrically connected to the corresponding third vertical via holes 18 and the second vertical via holes 16.

參照圖2所示,在一些實施例中,第二垂直導通孔16透過接墊23,接合於在對應的第三軟性玻璃片12上的接墊或導線19。第三垂直導通孔18,在第三軟性玻璃片12的一側,連接接墊或導線19,而在另一側連接對應的接墊24。接墊24接合於在第一軟性玻璃片11上的接墊25。 Referring to FIG. 2, in some embodiments, the second vertical vias 16 are bonded to the pads or wires 19 on the corresponding third flexible glass sheet 12 through the pads 23. The third vertical via 18 connects the pads or wires 19 on one side of the third flexible glass sheet 12 and the corresponding pads 24 on the other side. The pad 24 is bonded to the pad 25 on the first flexible glass sheet 11.

在一些實施例中,第一軟性玻璃片11、第二軟性玻璃片13或第三軟性玻璃片12之厚度,介於50微米至200微米。在一些實施例中,第一軟性玻璃片11、第二軟性玻璃片13或第三軟性玻璃片12,包含無鹼金屬之硼矽酸鹽玻璃。在一些實施例中,第一軟性玻璃片11、第二軟性玻璃片13,或第三軟性玻璃片12之至少一結合表面之表面粗糙度,約為0.3奈米(但本發明並不以此為限)。在一些實施例中,第一軟性玻璃片11、第二軟性玻璃片13,或第三軟性玻璃片12之至少一結合表面之表面高度,最大誤差,約為0.4奈米(但本發明並不以此為限)。在一些實施例中,第一軟性玻璃片11、第二軟性玻璃片13,或第三軟性玻璃片12之熱膨脹係數,約 為2.8ppm/K。在一些實施例中,第一軟性玻璃片11、第二軟性玻璃片13,或第三軟性玻璃片12,可為康寧公司之WillowTM玻璃。 In some embodiments, the thickness of the first soft glass sheet 11, the second soft glass sheet 13, or the third soft glass sheet 12 is between 50 micrometers and 200 micrometers. In some embodiments, the first flexible glass sheet 11, the second soft glass sheet 13, or the third soft glass sheet 12 comprises an alkali metal-free borosilicate glass. In some embodiments, the surface roughness of at least one bonding surface of the first flexible glass sheet 11, the second flexible glass sheet 13, or the third soft glass sheet 12 is about 0.3 nm (but the invention does not Limited). In some embodiments, the surface height of the at least one bonding surface of the first flexible glass sheet 11, the second flexible glass sheet 13, or the third soft glass sheet 12 has a maximum error of about 0.4 nm (but the invention does not This is limited to). In some embodiments, the first flexible glass sheet 11, the second flexible glass sheet 13, or the third flexible glass sheet 12 has a coefficient of thermal expansion of about 2.8 ppm/K. In some embodiments, the first flexible glass sheet 11, the second flexible glass sheet 13, the third, or soft glass sheet 12, may be Willow TM glass of Corning.

在一些實施例中,第一垂直導通孔14、第二垂直導通孔16,或第三垂直導通孔18包含銅。在一些實施例中,第一垂直導通孔14、第二垂直導通孔16,或第三垂直導通孔18包含電鍍銅。在一些實施例中,於第一軟性玻璃片11、第二軟性玻璃片13或第三軟性玻璃片12,先以雷射形成開孔30,然後再電鍍銅於通孔中,形成第一垂直導通孔14、第二垂直導通孔16,或第三垂直導通孔18。 In some embodiments, the first vertical via 14, the second vertical via 16, or the third vertical via 18 comprises copper. In some embodiments, the first vertical vias 14, the second vertical vias 16, or the third vertical vias 18 comprise electroplated copper. In some embodiments, in the first flexible glass sheet 11, the second soft glass sheet 13, or the third soft glass sheet 12, the opening 30 is formed by laser, and then copper is electroplated into the through hole to form a first vertical. The via hole 14 , the second vertical via hole 16 , or the third vertical via hole 18 .

在至少一些實施例中,積體電路垂直式探針卡,使用多層陽極結合法接合之軟性玻璃片。由於軟性玻璃片具有良好的平整度、低表面粗糙度等優點,故可大幅提升積體電路垂直式探針卡測試的性能及效率,並縮短測試時間。 In at least some embodiments, an integrated circuit vertical probe card uses a flexible glass sheet joined by a multilayer anodic bonding process. Since the soft glass sheet has the advantages of good flatness and low surface roughness, the performance and efficiency of the vertical probe card test of the integrated circuit can be greatly improved, and the test time can be shortened.

在一些實施例中,用語「約」表顯示數值之10%範圍內。在一些實施例中,用語「約」表顯示數值之5%範圍內。 In some embodiments, the term "about" is used to indicate a range of 10% of the value. In some embodiments, the term "about" is used to indicate a range of 5% of the value.

本揭露之技術內容及技術特點已揭示如上,然而熟悉本項技術之人士仍可能基於本揭露之教示及揭示而作種種不背離本揭露精神之替換及修飾。因此,本揭露之保護範圍應不限於實施範例所揭示者,而應包括各種不背離本揭露之替換及修飾,並為以下之申請專利範圍所涵蓋。 The technical content and technical features of the present disclosure have been disclosed as above, and those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the disclosure. Therefore, the scope of the present disclosure is not to be construed as being limited by the scope of

1‧‧‧積體電路垂直式探針卡 1‧‧‧Integrated circuit vertical probe card

11‧‧‧第一軟性玻璃片 11‧‧‧First soft glass

12‧‧‧第三軟性玻璃片 12‧‧‧ Third soft glass

13‧‧‧第二軟性玻璃片 13‧‧‧Second soft glass

14‧‧‧第一垂直導通孔 14‧‧‧First vertical via

15‧‧‧第一導電高分子接點 15‧‧‧First conductive polymer joint

16‧‧‧第二垂直導通孔 16‧‧‧Second vertical via

17‧‧‧第二導電高分子接點 17‧‧‧Second conductive polymer joint

18‧‧‧第三垂直導通孔 18‧‧‧ Third vertical via

19‧‧‧導線 19‧‧‧Wire

21‧‧‧接墊 21‧‧‧ pads

22‧‧‧接墊 22‧‧‧ pads

23‧‧‧接墊 23‧‧‧ pads

24‧‧‧接墊 24‧‧‧ pads

25‧‧‧接墊 25‧‧‧ pads

30‧‧‧開孔 30‧‧‧Opening

Claims (8)

一種積體電路垂直式探針卡,包含:一第一軟性玻璃片;複數第一垂直導通孔,形成於該第一軟性玻璃片上;複數第一導電高分子接點,設置於該第一軟性玻璃片上,並對應電性連接該些第一垂直導通孔;一第二軟性玻璃片;複數第二垂直導通孔,形成於該第二軟性玻璃上;複數第二導電高分子接點,形成於該第二軟性玻璃片上,並對應電性連接該些第二垂直導通孔,其中該些第一導電高分子接點,與該些第二導電高分子接點的配置不同;至少一第三軟性玻璃片,設置在該第一軟性玻璃片與該第二軟性玻璃片之間,並直接與該第一軟性玻璃片與該第二軟性玻璃片結合;以及複數導線與複數第三垂直導通孔,形成於該第三軟性玻璃片上,其中該複數導線與該複數第三垂直導通孔,使各該第一導電高分子接點與對應的該第二導電高分子接點電性相連。 An integrated circuit vertical probe card comprising: a first soft glass piece; a plurality of first vertical through holes formed on the first flexible glass piece; and a plurality of first conductive polymer contacts disposed on the first softness The first vertical via hole is electrically connected to the glass sheet; a second flexible glass sheet; a plurality of second vertical via holes formed on the second soft glass; and a plurality of second conductive polymer contacts formed on the second flexible conductive sheet The second flexible glass plate is electrically connected to the second vertical via holes, wherein the first conductive polymer contacts are different from the second conductive polymer contacts; at least a third softness a glass sheet disposed between the first flexible glass sheet and the second flexible glass sheet and directly bonded to the first flexible glass sheet and the second flexible glass sheet; and a plurality of wires and a plurality of third vertical via holes, The first flexible conductive material is electrically connected to the corresponding second conductive polymer contact. 根據申請專利範圍第1項所述之積體電路垂直式探針卡,其中該第一軟性玻璃片、該第二軟性玻璃片,或該第三軟性玻璃片之厚度,介於50微米至200微米。 The integrated circuit vertical probe card according to claim 1, wherein the first flexible glass piece, the second soft glass piece, or the third soft glass piece has a thickness of 50 micrometers to 200 degrees. Micron. 根據申請專利範圍第1項所述之積體電路垂直式探針卡,其中該第一軟性玻璃片、該第二軟性玻璃片,或該第三軟 性玻璃片,包含無鹼金屬之硼矽酸鹽玻璃。 The integrated circuit vertical probe card according to claim 1, wherein the first soft glass piece, the second soft glass piece, or the third soft Glass sheet containing borosilicate glass without alkali metal. 根據申請專利範圍第1項所述之積體電路垂直式探針卡,其中該第一軟性玻璃片、該第二軟性玻璃片和該第三軟性玻璃片,是以陽極結合法結合。 The integrated circuit vertical probe card according to claim 1, wherein the first soft glass piece, the second soft glass piece and the third soft glass piece are bonded by an anodic bonding method. 根據申請專利範圍第1項所述之積體電路垂直式探針卡,其中該第一軟性玻璃片、該第二軟性玻璃片,或該第三軟性玻璃片之熱膨脹係數,約為2.8ppm/K。 The integrated circuit vertical probe card according to claim 1, wherein the first flexible glass piece, the second flexible glass piece, or the third soft glass piece has a thermal expansion coefficient of about 2.8 ppm/ K. 根據申請專利範圍第1項所述之積體電路垂直式探針卡,其中各該第一垂直導通孔、各該第二垂直導通孔,或各該第三垂直導通孔包含銅。 The integrated circuit vertical probe card of claim 1, wherein each of the first vertical vias, each of the second vertical vias, or each of the third vertical vias comprises copper. 根據申請專利範圍第1項所述之積體電路垂直式探針卡,其中各該第一垂直導通孔、各該第二垂直導通孔,或各該第三垂直導通孔,形成於一以雷射所形成之開孔。 The integrated circuit vertical probe card of claim 1, wherein each of the first vertical vias, each of the second vertical vias, or each of the third vertical vias is formed in a The opening formed by the shot. 根據申請專利範圍第1項所述之積體電路垂直式探針卡,其中各該第一垂直導通孔、各該第二垂直導通孔,或各該第三垂直導通孔包含電鍍銅。 The integrated circuit vertical probe card of claim 1, wherein each of the first vertical vias, each of the second vertical vias, or each of the third vertical vias comprises electroplated copper.
TW103126140A 2014-07-31 2014-07-31 Integrated circuit vertical probe card TWI548882B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW584727B (en) * 2001-03-02 2004-04-21 Advanced Chip Eng Tech Inc Wafer level probe card
US6861858B2 (en) * 2002-01-24 2005-03-01 Scs Hightech, Inc. Vertical probe card and method for using the same
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TW200741221A (en) * 2005-12-22 2007-11-01 Jsr Corp Circuit board apparatus for wafer inspection, probe card, and wafer inspection apparatus
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