TWI545417B - Control Method of Bulk and Its Control Circuit - Google Patents

Description

Bulk control method and control circuit thereof

The invention relates to a control method and a control circuit, and more particularly to a control method of a base (Bulk) and a control circuit thereof.

Switching diodes are commonly used electronic components in various control circuits today. However, regardless of the switching transistor of MNOS or PMOS, based on its own structural characteristics, there will be an inherent parasite diode, that is, a pn junction formed between the drain and the source of the transistor. Polar body. Such parasitic diodes tend to cause some problems in the application of a power charging circuit or a boosting circuit.

As shown in FIG. 1 , it is a conventional non-synchronous power supply boost circuit. When the voltage on the voltage source side is just input and the circuit of the output terminal Vout does not require a voltage, the transistor is due to its base (Bulk) and source. When the pole is connected to the same potential, a parasitic diode 10 is generated between the source terminal and the drain terminal, so that the voltage output terminal Vout cannot output to a zero potential and outputs a potential of a Vin-Diode, but the system of the back end does not want this. Generation of Vin-Diode potential.

As shown in FIG. 2, it is a conventional synchronous power supply boosting circuit. Similarly, the transistor connected to the output terminal Vout is also caused by the effect of the parasitic diode 10 when the voltage on the voltage source side is just input. The voltage output terminal Vout cannot be output at zero potential.

Therefore, when the back-end system has a true zero potential demand, the current circuit cannot meet the requirements of the back-end system due to the problem that the zero-potential output cannot be achieved, and the power saving effect cannot be achieved.

One of the objects of the present invention is to provide an output capability of zero potential on the power supply side.

Another object of the present invention is to enable the power supply side to achieve power saving by transmitting the ability to have a zero potential output.

To achieve the above and other objects, the present invention provides a method for controlling a bulk (Bulk) in a voltage supply circuit for controlling a switching transistor coupled to a voltage output terminal thereof to control the voltage output terminal. The voltage level, the control method includes: a voltage level obtaining step of obtaining a voltage from a voltage source side of the voltage supply circuit and defining the first voltage level, and obtaining the switching transistor at the voltage output end The voltage on the side is defined as a second voltage level; and a junction diode polarity conversion step is to control the pole direction of the junction diode of the switch transistor, wherein the first voltage level is greater than the When the second voltage level is applied, a voltage value corresponding to the voltage source side of the voltage supply circuit is applied to the base end of the switching transistor, so that the pole of the junction diode of the switching transistor is opposite to the switching transistor a direction from the source to the drain such that the voltage level of the voltage output terminal is zero potential, wherein when the second voltage level is greater than the first voltage level, a corresponding correspondence is applied to the base end of the switching transistor The switching transistor to a voltage value of the voltage of the output end side, so that the electrode junction diode of the switching transistor in the same direction of the source of the switching transistor to the drain of the extreme.

To achieve the above and other objects, the present invention provides a control circuit for a bulk (Bulk) in a voltage supply circuit for controlling a switching transistor coupled to a voltage output terminal thereof to control the voltage output terminal. The voltage level, the control circuit includes: a voltage level processing circuit for obtaining a voltage from a voltage source side of the voltage supply circuit and defining the first voltage level, and obtaining the switching transistor at the voltage output The voltage on the terminal side is defined as a second voltage level, and the first voltage level and the second voltage level are compared to output a comparison result; and a switching transistor adjustment circuit is coupled to the voltage level processing a circuit to receive the comparison result, the switch transistor adjustment circuit is rooted Controlling the pole direction of the junction diode of the switching transistor according to the comparison result, when the first voltage level is greater than the second voltage level, applying a voltage corresponding to the voltage supply circuit to the base end of the switching transistor a voltage value on the voltage source side such that a pole of the junction diode of the switching transistor is opposite to a source to a drain of the switching transistor, and further, the second voltage level is greater than the first When the voltage level is applied, a voltage value corresponding to the switching transistor on the voltage output end side is applied to the base end of the switching transistor, so that the pole of the junction transistor of the switching transistor is the same as the switching transistor The source is in the direction of the bungee.

In an embodiment of the present invention, the switching transistor adjustment circuit includes: a voltage level adjusting unit coupled to the voltage level processing circuit and having a control end, which is generated according to the comparison result and the input of the control end a first control signal pair and a second control signal pair; a first control unit coupled to the voltage level adjustment unit, a voltage source side of the voltage supply circuit, a base end of the switch transistor, and the voltage output end, Retrieving the first control signal pair, outputting the voltage on the voltage source side of the voltage supply circuit to the base end of the switch transistor or outputting the voltage at the voltage output terminal to the base end of the switch transistor; and a second control unit, The voltage level adjustment unit, the voltage source side of the voltage supply circuit, and the voltage output end are coupled to the second control signal pair, output the voltage on the voltage source side of the voltage supply circuit, or output the voltage at the voltage output end. And the control terminal of the voltage level adjusting unit, wherein the first control signal pair is caused when the first voltage level is greater than the second voltage level The first control unit outputs a voltage on the voltage source side of the voltage supply circuit to the base end of the switch transistor, and the second control signal pair causes the second control unit to output the voltage of the voltage output terminal to the voltage level adjustment unit a control terminal, wherein the first control signal pair causes the first control unit to output a voltage of the voltage output terminal to the switch transistor when the first voltage level is greater than the second voltage level The second control signal pair causes the voltage on the voltage source side of the voltage supply circuit of the second control unit to be the control end of the voltage level adjustment unit.

In an embodiment of the invention, the first control unit comprises two P-channel enhancement MOSFETs connected in series and an N-channel enhancement MOSFET connected in parallel with the two P-channel enhancement MOSFETs, the two P-channel enhancement MOSFETs And the gate terminal of the N-channel enhancement type MOSFET is controlled by the first control signal pair.

In an embodiment of the invention, the second control unit comprises two P-channel enhancement MOSFETs connected in series and an N-channel enhancement MOSFET connected in parallel with the two P-channel enhancement MOSFETs, the two P-channel enhancement MOSFETs And the gate terminal of the N-channel enhancement type MOSFET is controlled by the second control signal pair.

In an embodiment of the invention, the voltage level adjusting unit includes a first voltage level shifter that outputs the first control signal pair and a second voltage level shifter that outputs the second control signal pair. .

Therefore, the present invention can control the polar direction of the junction diode (parasitic diode) of the switching transistor by applying an additional voltage between the base and the gate of the transistor, when the pole is opposite to When the source of the switching transistor is in the direction of the drain, the parasitic potential (Vin-diode) can be blocked, thereby achieving zero potential output and power saving.

10‧‧‧ Parasitic diode

100‧‧‧Switching transistor

200‧‧‧zero potential control circuit

210‧‧‧Voltage level processing circuit

220‧‧‧Switching transistor adjustment circuit

221‧‧‧Voltage level adjustment unit

2212‧‧‧First voltage level shifter

2214‧‧‧Second voltage level shifter

222‧‧‧First Control Unit

223‧‧‧Second Control Unit

X1, Y1‧‧‧ first control signal pair

X2, Y2‧‧‧ second control signal pair

Va‧‧‧ potential

Vb‧‧‧ potential

Vin‧‧‧ voltage input

Vout‧‧‧voltage output

VPH‧‧‧ potential point

VPL‧‧‧ potential point

Vfn1‧‧‧ voltage on the voltage source side

Vout1‧‧‧ voltage on the voltage output side

FIG. 1 is a schematic diagram of a conventional asynchronous power supply boosting circuit.

[Fig. 2] is a schematic diagram of a conventional synchronous power supply boosting circuit.

FIG. 3 is a schematic diagram of a control circuit of a base (Bulk) according to an embodiment of the present invention.

FIG. 4 is a specific circuit diagram of a Bulk control circuit in an embodiment of the present invention.

In order to fully understand the object, features and advantages of the present invention, the present invention will be described in detail by the following specific embodiments and the accompanying drawings. And additionally controlling a switching transistor coupled to the voltage output end of the voltage supply circuit to enable the voltage level of the voltage output terminal of the voltage supply circuit to reach a zero potential output. The invention achieves the purpose of control by applying an additional voltage between the substrate and the gate of the switching transistor, and the application of the additional voltage causes a change in the polar orientation of the junction diode of the switching transistor. Once changed to a direction facing away from the voltage output terminal, the switching transistor can be generated by the generation of a parasitic potential (Vin-diode) in the reverse junction diode blocking voltage supply circuit, or a blocking voltage supply. The output of other parasitic potentials (Vin-diode) in the circuit.

Based on this mechanism, the control method of the substrate (Bulk) of the present invention comprises: a voltage level obtaining step and a junction diode polar switching step.

In the voltage level obtaining step, a voltage from a voltage source side of the voltage supply circuit is obtained and defined as a first voltage level, and a voltage of the switching transistor on the voltage output end side is obtained and defined as Two voltage levels. Since the voltage on the voltage source side is just input, the voltage on the voltage source side is higher than the output side (there is no voltage on the output side), and when the system coupled to the voltage output terminal requires a potential, the voltage on the output side of the voltage It will rise, so the comparison of the two voltages can be used as the basis for the polar transition of the junction diode.

In the junction diode polarity conversion step, the pole direction of the junction diode of the switching transistor is controlled. When the first voltage level is greater than the second voltage level, applying a voltage value corresponding to the voltage source side of the voltage supply circuit to the base end of the switching transistor to connect the junction diode of the switching transistor The pole of the body is opposite to the source to the drain of the switching transistor, and the generation of a parasitic potential (Vin-diode) in the voltage supply circuit causes the voltage level of the voltage output terminal to be zero potential; In one aspect, when the second voltage level is greater than the first voltage level, a voltage value corresponding to the switching transistor on the voltage output end side is applied to the base end of the switching transistor, so that the switching transistor is connected The pole of the surface diode is the same as the source to the drain of the switching transistor, so that the output of the voltage output is normal.

Next, please refer to FIG. 3, which is a schematic diagram of a control circuit of a base (Bulk) in an embodiment of the present invention. In this embodiment, the present invention controls the switching transistor 100 coupled to the voltage output terminal through a zero potential control circuit 200 through the extra voltage VPH between the base and the gate of the switching transistor 100. By applying, the pole of the junction diode (parasitic diode) of the switching transistor 100 can be controlled, and the generation of the parasitic potential (Vin-diode) can be blocked when the voltage source is input, and the zero potential output is achieved. Power saving effect.

The potential between the base and the gate of the switching transistor 100 can be made the same as the source-base terminal (Va) by applying an additional voltage VPH between the base and the gate of the switching transistor 100. Or the potential of the drain-substrate end (Vb), thereby controlling the polarity of the junction diode (parasitic diode) of the switching transistor 100. The switching transistor 100 can be various transistors such as P-type MOS, N-type MOS, various field effect transistors, and the like.

Next, please refer to FIG. 4, which is a specific circuit diagram of a Bulk control circuit in an embodiment of the present invention. The zero potential control circuit 200 includes: a voltage level processing circuit 210 and a switching transistor The circuit 220 is adjusted. The voltage level processing circuit 210 obtains the voltage Vin1 from the voltage source side of the voltage supply circuit and defines it as the first voltage level, and obtains the voltage Vout1 of the switching transistor 100 on the voltage output end side and defines it as the first And comparing the first voltage level and the second voltage level to output a comparison result, wherein the voltage level processing circuit 210 is exemplified by, but not limited to, any corresponding effect can be achieved. The circuit for outputting the comparison result can be applied to the invention: the comparison mode of the first voltage level and the second voltage level can be set through the configuration of the comparator and the resistor, so that the comparison result can correctly drive the subsequent voltage. The operation of the level adjustment unit 221.

The switching transistor adjustment circuit 220 is coupled to the voltage level processing circuit 210 to receive the comparison result. The switching transistor adjustment circuit 220 controls the pole direction of the junction diode of the switching transistor 100 according to the comparison result. When the first voltage level is greater than the second voltage level, the switching transistor 100 is A voltage value Vin1 corresponding to the voltage source side of the voltage supply circuit is applied to the base end such that the pole of the junction diode of the switching transistor 100 is opposite to the source to the drain of the switching transistor 100. In addition, when the second voltage level is greater than the first voltage level, a voltage value Vout1 corresponding to the switching transistor 100 on the voltage output end side is applied to the base end of the switching transistor 100, so that the switch is electrically The poles of the junction diodes of the crystal 100 are oriented in the same direction as the source to the drain of the switching transistor 100.

Further, the specific circuit diagram shown in FIG. 4 is described. However, the specific circuit diagram is only an example, and is not a limitation that the invention can be implemented only by the circuit. The switch transistor adjustment circuit 220 includes a voltage level adjustment unit 221 , a first control unit 222 , and a second control unit 223 .

The voltage level adjusting unit 221 is coupled to the voltage level processing circuit 210 and has a control end (same potential as the VPL terminal). The voltage level adjusting unit 221 compares the result according to the voltage level processing circuit 210 and the control. The input of the terminal generates a first control signal pair (X1, Y1) and a second control signal Yes (X2, Y2). The first control signal pair (X1, Y1) and the second control signal pair (X2, Y2) correspond to a state in which the voltage source side is just input and the voltage output terminal system needs a potential state. There is a corresponding control signal to control the opening and closing of the transistors in the first control unit 222 and the second control unit 223. The voltage level adjusting unit 221 includes a first voltage level shifter 2212 that outputs the first control signal pair (X1, Y1) and a second voltage that outputs the second control signal pair (X2, Y2). Level shifter 2214. The voltage level adjusting unit 221 is configured to ensure that the level of the absolute value signal is higher than a lower limit potential of the voltage input by the control terminal when the control terminal has a potential input, so as to ensure that the system at the voltage output terminal needs the potential correctly. Regulate the transition of the junction diode polarity.

The first control unit 222 is coupled to the voltage level adjusting unit 221, the voltage source side Vin1 of the voltage supply circuit, the base end of the switching transistor 100 (via the potential point VPH), and the voltage Vout1 of the voltage output end side. The first control unit 222 responds to the first control signal pair (X1, Y1), and regulates the transistor in the first control unit 222 to output the voltage on the voltage source side of the voltage supply circuit (the potential of the VPH terminal at this time) The same as Vin1) to the base end of the switching transistor 100, thereby generating a junction diode polarity opposite to the source-drain direction of the switching transistor 100; or when the system at the voltage output requires a potential And outputting the voltage at the voltage output terminal (the potential of the VPH terminal is the same as Vout1) to the base end of the switching transistor 100, thereby generating a junction diode pole similar to the source-drain direction of the switching transistor 100. to. The first control unit 222 includes two P-channel enhancement type MOSFETs connected in series, and the first control unit 222 further includes an N-channel enhancement type MOSFET connected in parallel with the two P-channel enhancement type MOSFETs, the two P channels. The gate terminals of the enhancement MOSFET and the N-channel enhancement MOSFET are controlled by the first control signal pair (X1, Y1).

The second control unit 223 is coupled to the voltage level adjusting unit 221, the voltage Vin1 of the voltage source side of the voltage supply circuit, and the voltage Vout1 of the voltage output end. The second control unit 223 returns The second control signal pair (X2, Y2) should output the voltage on the voltage source side of the voltage supply circuit (the potential of the VPL terminal is the same as Vin1 at this time) to the control terminal of the voltage level adjustment unit 221 or output the voltage output terminal. The voltage (the potential at the VPL terminal is now the same as Vout1) to the control terminal of the voltage level adjusting unit 221. The second control unit 223 includes two P-channel enhancement type MOSFETs connected in series, and an N-channel enhancement type MOSFET in which the second control unit 223 is further connected in parallel with the two P-channel enhancement type MOSFETs. The gate MOSFET of the MOSFET and the N-channel enhancement MOSFET is controlled by the second control signal pair (X2, Y2).

The invention has been described above in terms of the preferred embodiments, and it should be understood by those skilled in the art that the present invention is not intended to limit the scope of the invention. It should be noted that variations and permutations equivalent to those of the embodiments are intended to be included within the scope of the present invention. Therefore, the scope of protection of the present invention is defined by the scope of the patent application.

100‧‧‧Switching transistor

200‧‧‧zero potential control circuit

Va‧‧‧ potential

Vb‧‧‧ potential

Vin‧‧‧ voltage input

Vout‧‧‧voltage output

VPH‧‧‧ potential point

Vin1‧‧‧ voltage on the voltage source side

Vout1‧‧‧ voltage on the voltage output side

Claims (5)

A control circuit of a Bulk is connected to a voltage supply circuit for controlling a switching transistor of a voltage output end thereof to control a voltage level of the voltage output terminal, the control circuit comprising: a voltage The level processing circuit obtains a voltage from a voltage source side of the voltage supply circuit and defines it as a first voltage level, and obtains a voltage of the switching transistor on the voltage output end side and defines it as a second voltage level. And comparing the first voltage level and the second voltage level to output a comparison result; and a switching transistor adjusting circuit coupled to the voltage level processing circuit to receive the comparison result, the switching transistor Adjusting the circuit and controlling the pole direction of the junction diode of the switch transistor according to the comparison result. When the first voltage level is greater than the second voltage level, applying a voltage corresponding to the voltage to the base end of the switch transistor Supplying a voltage value on a voltage source side of the circuit such that a pole of the junction diode of the switching transistor is opposite to a source to a drain of the switching transistor, and further, the second When the level is greater than the first voltage level, a voltage value corresponding to the switching transistor on the voltage output end side is applied to the base end of the switching transistor to make the pole of the junction transistor of the switching transistor The switching transistor transistor adjustment circuit includes: a voltage level adjusting unit coupled to the voltage level processing circuit and having a control end, according to the direction of the source to the drain of the switching transistor The comparison result and the input of the control terminal generate a first control signal pair and a second control signal pair; a first control unit is coupled to the voltage level adjusting unit, the voltage source side of the voltage supply circuit, the base end of the switching transistor, and the voltage output end, and corresponds to the first control signal pair, and outputs the voltage supply a voltage on the voltage source side of the circuit to the base end of the switching transistor or a voltage outputting the voltage output terminal to the base end of the switching transistor; and a second control unit coupled to the voltage level adjusting unit, the voltage a voltage source side of the supply circuit and the voltage output end, corresponding to the second control signal pair, outputting the voltage on the voltage source side of the voltage supply circuit or outputting the voltage of the voltage output terminal to the control end of the voltage level adjustment unit, wherein When the first voltage level is greater than the second voltage level, the first control signal pair causes the first control unit to output a voltage on a voltage source side of the voltage supply circuit to a base end of the switch transistor, The second control signal pair causes the second control unit to output the voltage of the voltage output terminal to the control end of the voltage level adjustment unit, wherein the first voltage level When the second voltage level is greater than the second voltage level, the first control signal causes the first control unit to output the voltage of the voltage output terminal to the base end of the switch transistor, and the second control signal pair causes the second control unit to a voltage source side voltage of the voltage supply circuit to a control end of the voltage level adjustment unit, wherein the first control unit comprises two P-channel enhancement type MOSFETs connected in series and one parallel with the two P-channel enhancement type MOSFETs An N-channel enhancement MOSFET, the gate of the two P-channel enhancement MOSFET and the N-channel enhancement MOSFET are controlled by the first control signal pair. The control circuit of claim 1, wherein the second control unit comprises two P-channel enhancement MOSFETs connected in series and an N-channel enhancement MOSFET connected in parallel with the two P-channel enhancement MOSFETs, the two P-channel enhancements The MOSFET and the gate terminal of the N-channel enhancement MOSFET are controlled by the second control signal pair. The control circuit of claim 1 or 2, wherein the voltage level adjusting unit comprises a first voltage level shifter outputting the first control signal pair and a second voltage bit outputting the second control signal pair Quasi-shifter. A method for controlling a bulk (Bulk), in a voltage supply circuit, using a control circuit according to any one of claims 1 to 3, a switching transistor coupled to a voltage output terminal of the voltage supply circuit Controlling to control the voltage level of the voltage output terminal, the control method includes: a voltage level obtaining step of obtaining a voltage from a voltage source side of the voltage supply circuit and defining the first voltage level, and Obtaining a voltage of the switching transistor on the voltage output end side and defining the second voltage level; and a junction diode polarity conversion step of controlling the polarity of the junction diode of the switching transistor, When the first voltage level is greater than the second voltage level, applying a voltage value corresponding to the voltage source side of the voltage supply circuit to the base end of the switching transistor to connect the junction diode of the switching transistor The pole of the body is opposite to the source to the drain of the switching transistor, so that the voltage level of the voltage output terminal is zero potential, wherein when the second voltage level is greater than the first voltage level, switch End of the crystal substrate is applied to a voltage corresponding to the switching transistor to the voltage of the output terminal side The value is such that the pole of the junction diode of the switching transistor is in the same direction as the source to the drain of the switching transistor. The control method of claim 4, wherein in the voltage level obtaining step, the first voltage level is taken from a voltage on a source side of the switching transistor.