TWI542741B - A method for preparing a single crystal crystal for growing a multi-type compound - Google Patents
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本發明係為一種用於成長多類型化合物之單晶晶體之製備方法,特別是關於以碳化矽、氮化物為原料,以使用物理氣相傳輸法(PVT)而製備出大尺寸之晶體。 The present invention relates to a method for preparing a single crystal crystal for growing a plurality of types of compounds, and more particularly to preparing a large-sized crystal using a ruthenium carbide or a nitride as a raw material by using a physical vapor transport method (PVT).
近年來現代科技與生活品質的快速發展,各類3C高科技電子產品無不趨向輕、薄、短、小與多功能發展,因而諸如碳化矽(SiC)、第III族氮化物(如GaN、AlN)被發展出可做為半導體材料用於各種電子裝置,碳化矽(SiC)、第III族氮化物不但有高物理強度及高耐侵蝕強度,同時有絕佳的電子特性,包含有輻射硬度、高擊穿電場、較寬的能帶隙、高飽和電子飄移速度、可高溫操作等特性。 In recent years, the rapid development of modern technology and quality of life, all kinds of 3C high-tech electronic products are all tend to be light, thin, short, small and multi-functional development, such as tantalum carbide (SiC), III nitride (such as GaN, AlN) has been developed as a semiconductor material for various electronic devices. Tantalum carbide (SiC) and Group III nitrides not only have high physical strength and high corrosion resistance, but also have excellent electronic properties, including radiation hardness. , high breakdown electric field, wide band gap, high saturation electron drift speed, high temperature operation and other characteristics.
物理氣相傳輸法(Physical Vapor Transport,PVT)和物理氣相沉積法(Physical Vapor Deposition,PVD)則為業界用來做為碳化矽、第III族氮化物長晶的技術,其亦被用做為量產晶片之技術;物理氣相傳輸法(Physical Vapor Transport,PVT)主要是利用碳化矽(SiC)、第III族氮化物的材料粉體在高溫爐(坩堝)熱區的昇華,經由溫度梯度促進碳化矽(SiC)、第III族氮化物的氣相移動至晶種上進行長晶製程,完成晶體成 長。 Physical Vapor Transport (PVT) and Physical Vapor Deposition (PVD) are technologies used in the industry as lanthanum carbide and Group III nitride crystals. They are also used as technology. The technology for mass production of wafers; physical Vapor Transport (PVT) is mainly the use of cerium carbide (SiC), Group III nitride material powder in the high temperature furnace (坩埚) hot zone sublimation, via temperature The gradient promotes the vapor phase of the lanthanum carbide (SiC) and the group III nitride to the seed crystal for the growth process to complete the crystal formation. long.
但物理氣相傳輸法(Physical Vapor Transport,PVT)應用於碳化矽、第III族氮化物的晶體成長有下列缺點,以碳化矽為例:石墨導熱層缺陷,延伸至晶體內部,以PVT方法產製之碳化矽晶體中的六角空缺最早是由Stein(1993)發現,提出其形成原因是經由晶體背後的平面蒸發而來,其成核點是在晶種與晶種座間之石墨導熱層的不完美處;請參閱第一圖,為先前技術晶體成長缺陷示意圖,在長晶過程中,藉由六角空缺底部(靠近晶種)的成長階段,以及空缺頂部(靠近成長表面)的蒸發,會形成六角空缺的移動,晶種(13)與晶種座(11)間之石墨導熱層(12)的不完美處會引發六角空缺,而其他如6H(或15R)多晶嵌入物(15)、富碳沉積區、熱分解孔洞也肇因於同樣原因,文獻或專利中所使用避免這些缺陷的方式為於晶種背後鍍製一均勻光阻層,阻擋碳化矽因孔洞造成熱傳導不良而於晶種背後進行局部昇華,但因而降低晶體的成長速率及未能有再現性。 However, the physical vapor transport (PVT) applied to the crystal growth of niobium carbide and group III nitrides has the following disadvantages: taking niobium carbide as an example: defects in the graphite thermal layer extend to the inside of the crystal and are produced by the PVT method. The hexagonal vacancy in the tantalum carbide crystal was first discovered by Stein (1993). The reason for its formation is that it is evaporated through the plane behind the crystal. The nucleation point is the graphite heat conduction layer between the seed crystal and the seed crystal holder. Perfect; see the first figure, which is a schematic diagram of the prior art crystal growth defects. In the growth process, the growth phase of the hexagonal vacancy bottom (near the seed crystal) and the evaporation of the vacant top (near the growth surface) will form. The movement of the hexagonal vacancies, the imperfection of the graphite thermal layer (12) between the seed crystal (13) and the seed holder (11) will lead to hexagonal vacancies, while others such as 6H (or 15R) polycrystalline inserts (15), The carbon-rich deposition zone and the thermal decomposition pores are also caused by the same reason. The way to avoid these defects in the literature or patent is to deposit a uniform photoresist layer behind the seed crystal, and block the carbide from causing poor heat conduction due to the hole. Species Local sublimation is carried out behind, but this reduces the growth rate of the crystal and fails to reproduce.
而先前技術中,如EP2664695A1、US7371281B2、US7695565B2、US6336971B1等專利,皆要克服上述缺點以提高碳化矽單多晶成長速率,其使用之改善技術包括:1.坩堝材質及結構改良;2.原料的供給方式控制;3.原料成分或比例變更;4.氣流控制裝置改良等,以提高晶種長晶表面生長速率,改善晶種品質並提高晶體成長速率。 In the prior art, patents such as EP2664695A1, US7371281B2, US7695565B2, and US6336971B1 all have to overcome the above disadvantages to increase the growth rate of single crystal growth of tantalum carbide. The improvement techniques used include: 1. Material and structure improvement; 2. Raw material Supply mode control; 3. Change of raw material composition or ratio; 4. Improvement of airflow control device to improve the growth rate of seed crystal growth surface, improve seed quality and increase crystal growth rate.
因此目前業界極需發展出一種利用物理氣相傳輸法(Physical Vapor Transport,PVT)應用於碳化矽、氮化物的晶體成長,以克服及空缺頂部、六角空缺、多晶嵌入物、富碳沉積區、熱分解孔洞等缺點,如此一來,方能同時兼具效率與品質,製備出高品質的單晶晶體。 Therefore, the industry is now in need of developing a physical vapor transport (PVT) for the growth of tantalum carbide and nitride crystals to overcome and vacant top, hexagonal vacancies, polycrystalline intercalates, carbon-rich deposition zones. The disadvantages of thermal decomposition of pores, etc., can also produce high-quality single crystal crystals at the same time with efficiency and quality.
鑒於上述習知技術之缺點,本發明之主要目的在於提供一種用於成長多類型化合物之單晶晶體之製備方法(該多類型化合物可為碳化矽、氮化物(例如第III族氮化物)的一種,整合一抽氣製程、一加熱製程、一長晶製程、一冷卻製程及利用一可移動加熱源的移動等製程,以完成兼具環保與安全性,製備出大尺寸之單晶晶體材料。 In view of the above disadvantages of the prior art, the main object of the present invention is to provide a method for preparing a single crystal crystal for growing a multi-type compound (the multi-type compound may be niobium carbide or nitride (for example, a group III nitride). The invention integrates a pumping process, a heating process, a crystal growth process, a cooling process, and a moving process using a movable heating source to complete environmental protection and safety, and prepare a large-sized single crystal material. .
為了達到上述目的,根據本發明所提出之一方案,提供一種用於成長多類型化合物之單晶晶體之製備方法(該多類型化合物可為碳化矽、氮化物的一種),步驟包括:(A)提供一晶種設置於一沉積區;(B)提供一粉料設置於一高純度源體區;(C)進行一抽氣製程、一加熱製程、一長晶製程、一冷卻製程以製備出單晶晶體;其中,在該長晶製程中利用一加熱源與坩堝的相對移動來控制位於一氣體溫梯控制區內的溫度梯度產生溫度梯度移動,使溫度梯度呈現變動狀態,用以增加氣體溫梯控制區內的溫度梯度及過飽和度。 In order to achieve the above object, according to one aspect of the present invention, a method for preparing a single crystal crystal for growing a multi-type compound (the multi-type compound may be one of niobium carbide and nitride) is provided, and the steps include: (A) Providing a seed crystal disposed in a deposition zone; (B) providing a powder disposed in a high purity source region; (C) performing a pumping process, a heating process, a crystal growth process, and a cooling process to prepare a single crystal crystal; wherein, in the crystal growth process, a relative movement of a heating source and a crucible is used to control a temperature gradient in a gas temperature control region to generate a temperature gradient shift, so that the temperature gradient exhibits a variation state for increasing Temperature gradient and supersaturation in the gas temperature control zone.
步驟(C)中的長晶製程中,該加熱源可為一加熱線圈或加熱電阻絲(網),特別是一感應式加熱線圈,本發明可控制加熱源與坩堝的相對位移以加大坩堝軸向(坩堝的垂直方向或由沉積區到高純度源體區的方向)溫度差異、提升坩堝的過飽和度並控制坩堝內壓力,使碳化矽、氮化物氣體分子於晶種上進行二維成核,生成高密度生長台階並快速沉積碳化矽單晶,以致使晶種表面之碳化矽、氮化物晶體成長速率大於晶種背後碳化矽、氮化物局部昇華之分解速率,其中該加熱源與坩堝的相對位移速率範圍可為30mm/min~5E-4mm/min,移動方向為平行坩堝軸向(坩堝的垂直方向或由沉積區到高純度源體區的方向),可往上移動或往下移動。 In the crystal growth process in the step (C), the heating source may be a heating coil or a heating resistance wire (net), in particular, an inductive heating coil, and the invention can control the relative displacement of the heating source and the crucible to increase the crucible. The difference in temperature between the axial direction (the vertical direction of the crucible or the direction from the deposition zone to the high-purity source region), the supersaturation of the crucible is increased, and the pressure in the crucible is controlled, so that the niobium carbide and the nitride gas molecules are two-dimensionally formed on the seed crystal. The core generates a high-density growth step and rapidly deposits a tantalum carbide single crystal, so that the growth rate of the tantalum carbide and the nitride crystal on the surface of the seed crystal is greater than the decomposition rate of the niobium carbide behind the seed crystal and the local sublimation of the nitride, wherein the heating source and the crucible The relative displacement rate can range from 30mm/min to 5E-4mm/min, and the moving direction is parallel to the 坩埚 axial direction (the vertical direction of the 或 or the direction from the deposition area to the high-purity source body area), which can be moved up or down. mobile.
本發明藉由加熱源與坩堝的相對位移,可使長晶製程中坩堝內的氣體溫梯控制區內的溫度梯度範圍控制在3-12℃/cm,同時沉積區與高純度源體區之溫差範圍控制在90-350℃/cm,其中高純度源體區溫度高於沉積區溫度。 According to the relative displacement of the heating source and the crucible, the temperature gradient in the gas temperature control zone in the crucible in the crystal growth process can be controlled at 3-12 ° C / cm, and the deposition zone and the high purity source region are The temperature difference range is controlled at 90-350 ° C / cm, wherein the high purity source body region temperature is higher than the deposition zone temperature.
本發明可利用一碳化矽、氮化物之單晶晶圓片來當作晶種,晶種可選自3C、4H、6H、2H及15R其中一種或其混合,並經上述一種用於成長相對應晶態之單晶晶體之製備方法,可利用晶種製備出表面具備大於100階/cm之高密度臺階的單晶晶體。 The present invention can utilize a single crystal wafer of tantalum carbide or nitride as a seed crystal, and the seed crystal can be selected from one of 3C, 4H, 6H, 2H and 15R or a mixture thereof, and is used for growing phase through the above one. In the method for preparing a crystalline single crystal, a single crystal having a surface having a high density of more than 100 steps/cm on the surface can be prepared by using a seed crystal.
以上之概述與接下來的詳細說明及附圖,皆是為 了能進一步說明本創作達到預定目的所採取的方式、手段及功效。而有關本創作的其他目的及優點,將在後續的說明及圖式中加以闡述。 The above summary and the following detailed description and drawings are It can further explain the ways, means and effects of this creation to achieve the intended purpose. Other purposes and advantages of this creation will be explained in the following description and drawings.
11‧‧‧晶種座 11‧‧‧ Seed seat
12‧‧‧石墨導熱層 12‧‧‧ graphite heat conduction layer
13‧‧‧晶種 13‧‧‧ Seeds
14‧‧‧晶體 14‧‧‧ crystal
15‧‧‧多晶嵌入物 15‧‧‧Polycrystalline inserts
21‧‧‧可移動加熱源 21‧‧‧Removable heating source
22‧‧‧坩堝腔體 22‧‧‧坩埚 cavity
23‧‧‧沉積區 23‧‧‧Deposition area
24‧‧‧高純度源體區 24‧‧‧High purity source area
25‧‧‧氣體溫梯控制區 25‧‧‧Gas escalator control area
26‧‧‧加熱源 26‧‧‧heat source
S31~S33‧‧‧步驟 S31~S33‧‧‧Steps
第一圖係為本發明先前技術晶體成長缺陷示意圖;第二圖係為一種本發明一種製備單晶晶體之坩堝系統示意圖;第三圖係為本發明一種用於成長多類型化合物之單晶晶體之製備方法流程示意圖;第四圖係為本發明一種實施例之物理氣相沉積法製程溫度壓力控制示意圖;第五(a)圖係為本發明一種比較例碳化矽單晶切片圖;第五(b)圖係為本發明一種實施例碳化矽單晶切片圖。 The first figure is a schematic diagram of a crystal growth defect of the prior art of the present invention; the second figure is a schematic diagram of a germanium system for preparing a single crystal according to the present invention; and the third figure is a single crystal of the invention for growing a plurality of types of compounds. Schematic diagram of the preparation method; the fourth diagram is a schematic diagram of the temperature and pressure control of the physical vapor deposition process according to an embodiment of the present invention; the fifth (a) is a comparative example of a single crystal chip of the carbide according to the present invention; (b) A diagram showing a single crystal chip of a tantalum carbide according to an embodiment of the present invention.
以下係藉由特定的具體實例說明本創作之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地了解本創作之優點及功效。 The embodiments of the present invention are described by way of specific examples, and those skilled in the art can readily understand the advantages and effects of the present invention from the disclosure of the present disclosure.
本發明主要目的是提出一種獲得高成長速率之單晶晶體(例如碳化矽晶體、氮化物晶體)製作技術,藉由控制加熱源與坩堝的相對位移的位移提高坩堝系統溫度梯度及過 飽和度,及碳化矽料源使用率,用以提高晶種長晶表面碳化矽沉積速率,改善晶種品質並提高晶體成長速率,對後續進行大尺寸單晶晶體之量產能提高其易製性;其原理係利用當一個原子於界面上鍵合時,須考慮與周圍原子的相互作用,其鍵能大小與鄰近原子的距離成反比,晶體生長釋放能量越大,則越有利原子於此位置鍵合,因而只有光滑界面時不能借助活化能形成台階,必須通過二維成核不斷形成台階,以台階來維持促進生長,因此製備出具備高密度臺階的單晶晶體表面係為促進晶體成長速率的重大影響因素。 The main object of the present invention is to provide a technique for obtaining a single crystal of high growth rate (for example, a tantalum carbide crystal, a nitride crystal), and to increase the temperature gradient of the system by controlling the displacement of the relative displacement of the heating source and the crucible. Saturation, and the use rate of carbonized tantalum source, to increase the deposition rate of carbonized tantalum on the crystal growth surface, improve the seed quality and increase the crystal growth rate, and improve the productivity of the subsequent large-size single crystal crystal. The principle is to use when an atom is bonded at the interface, and the interaction with the surrounding atoms must be considered. The size of the bond energy is inversely proportional to the distance between adjacent atoms. The larger the crystal growth release energy, the more favorable the atom is. Bonding, so only the smooth interface can not form a step by means of activation energy, the step must be formed by two-dimensional nucleation, and the growth is promoted by the step. Therefore, the surface of the single crystal crystal with high density step is prepared to promote the crystal growth rate. A major factor influencing.
請參閱第二圖所示,為本發明一種製備單晶晶體之坩堝系統示意圖。如圖所示,本發明中坩堝包括可移動加熱源(21)、坩堝腔體(22)、沉積區(23)、高純度源體區(24)、氣體溫梯控制區(25),其中可移動加熱源(21)可以是加熱線圈或加熱電阻絲(網),特別是一種感應式加熱線圈,而沉積區(23)中可設置一固持器用以固定晶種,整個沉積區(23)位於坩堝腔體(22)中上方的位置,該處為坩堝腔體(22)於長晶製程中溫度相對較低的冷端,而高純度源體區(24)則位於沉積區(23)下方,用以容納材料源(如高純度碳化矽、氮化物粉料),其位置為坩堝腔體(22)於長晶製程中溫度相對較高的熱端,可將原料(粉料)由固體昇華為氣體分子,控制加熱裝置內溫度、熱場、氣氛及壓力,將碳化矽等氣體分子傳送並沉積於沉積區(23)的晶種上,藉由控制相對冷端及相對熱端之溫度,加大坩堝 系統軸向溫度差異、氣體溫梯控制區(25)內的變動的溫度梯度及控制系統內壓力,碳化矽或氮化物氣體分子於晶種上快速沉積單晶,以致晶種表面之晶體成長速率大於晶種背後碳化矽局部昇華之分解速率。 Please refer to the second figure, which is a schematic diagram of a germanium system for preparing a single crystal. As shown, the present invention includes a movable heating source (21), a helium chamber (22), a deposition zone (23), a high purity source region (24), and a gas temperature control zone (25), wherein The movable heating source (21) may be a heating coil or a heating resistor wire (net), in particular, an inductive heating coil, and a retainer may be disposed in the deposition zone (23) for fixing the seed crystal, the entire deposition zone (23) Located at a position above the crucible body (22) where the crucible body (22) is relatively cold at the cold end of the growth process, and the high purity source region (24) is located in the deposition zone (23) Below, to accommodate the material source (such as high-purity niobium carbide, nitride powder), the position is the hot end of the crucible cavity (22) in the long crystal process, the raw material (powder) can be The solid sublimates into gas molecules, controls the temperature, thermal field, atmosphere and pressure in the heating device, and transports and deposits gas molecules such as tantalum carbide on the seed crystal of the deposition zone (23), by controlling the relatively cold end and the opposite hot end. Temperature, increase 坩埚 The axial temperature difference of the system, the varying temperature gradient in the gas temperature control zone (25), and the pressure in the control system, the tantalum carbide or nitride gas molecules rapidly deposit a single crystal on the seed crystal, so that the crystal growth rate of the seed crystal surface It is greater than the decomposition rate of localized sublimation of niobium carbide behind the seed crystal.
請參閱第三圖所示,為本發明一種用於成長多類型化合物之單晶晶體之製備方法流程示意圖。如圖所示,本發明提供一種用於成長多類型化合物之單晶晶體之製備方法(該多類型化合物可為碳化矽、氮化物的一種),步驟包括:(A)提供一晶種設置於一沉積區(S31);(B)提供一粉料設置於一高純度源體區(S32);(C)進行一抽氣製程、一加熱製程、一長晶製程、一冷卻製程以製備出單晶晶體;其中,在該長晶製程中利用一加熱源與坩堝的相對移動來控制位於一氣體溫梯控制區內的溫度梯度產生溫度梯度移動,使溫度梯度呈現變動狀態(S33)。 Please refer to the third figure, which is a schematic flow chart of a method for preparing a single crystal crystal for growing a multi-type compound according to the present invention. As shown in the figure, the present invention provides a method for preparing a single crystal crystal for growing a multi-type compound (the multi-type compound may be one of niobium carbide and nitride), and the steps include: (A) providing a seed crystal at a deposition zone (S31); (B) providing a powder disposed in a high purity source region (S32); (C) performing a pumping process, a heating process, a crystal growth process, and a cooling process to prepare a single crystal; wherein a relative temperature of a heating source and a crucible is used in the crystal growth process to control a temperature gradient in a gas temperature control region to generate a temperature gradient shift, so that the temperature gradient exhibits a fluctuating state (S33).
請參閱第四圖所示,為本發明一種實施例之物理氣相沉積法製程溫度壓力控制示意圖。如圖所示,本發明實施例以PVT法製備4H-SiC單晶晶體,生長製程於高溫真空感應爐中的坩堝進行,使用之起始原料為高純度99%以上之碳化矽粉料,平均粒度為1-30mm,而晶種長晶溫度約為2100-2250℃,系統使用Ar為載體氣體,其系統長晶時壓力約為0.7-5torr,生長時間為30小時,晶種為一約350μm碳化矽單晶晶圓片;於抽氣製程中,將4H-SiC晶種用一固持器加 以固定,然後進行抽氣,以移除坩堝系統內的空氣及其他雜質,而於加熱製程中,加入惰性氣體Ar(或可為N2)及氫、甲烷、氨等輔助氣體,並使用加熱線圈加熱整個系統至約2100-2250℃,而於長晶製程中,系統內長晶時壓力值範圍為0.7-5torr壓力值,並調降加熱線圈位置,使之以約1mm/min進行向下移動,移動距離為6公分,共費時一小時完成線圈位置位移,由於長晶時加熱線圈共有6次移動,使得氣體溫梯控制區內的溫度梯度一直呈現變動狀態,並使溫度梯度變大;於長晶製程中,監控坩堝上部(沉積區)及坩堝下部(高純度源體區)之溫度,兩者差異達攝氏90-350度,氣體溫梯控制區內的溫度梯度為3-12℃/cm,成長速率為450μm/hr,而於冷卻製程中,可對完成之單晶晶體進行退火;本發明比較例中,使用上述相同條件,但未調控加熱線圈位移及位置,其坩堝上部(沉積區)及坩堝下部(高純度源體區)之溫度,兩者差異為攝氏40-80度,溫度梯度為1.3-2.7℃/cm,成長速率為200μm/hr。 Please refer to the fourth figure, which is a schematic diagram of process temperature control of physical vapor deposition process according to an embodiment of the present invention. As shown in the figure, in the embodiment of the present invention, a 4H-SiC single crystal is prepared by a PVT method, and the growth process is carried out in a high-temperature vacuum induction furnace, and the starting material used is a high-purity cerium carbide powder having a purity of 99% or more. The particle size is 1-30mm, and the seed crystal growth temperature is about 2100-2250°C. The system uses Ar as the carrier gas. The system has a crystal growth rate of about 0.7-5 torr, a growth time of 30 hours, and a seed crystal of about 350 μm. Tantalum carbide single crystal wafer; in the pumping process, 4H-SiC seed crystal is added by a holder To fix, then evacuate to remove air and other impurities in the helium system. In the heating process, add inert gas Ar (or N2) and auxiliary gases such as hydrogen, methane, ammonia, etc., and use heating coils. Heating the entire system to about 2100-2250 ° C. In the long crystal process, the pressure value in the system is in the range of 0.7-5 torr pressure, and the position of the heating coil is lowered to move downward at about 1 mm/min. The moving distance is 6 cm, and the coil position displacement is completed in one hour. Since the heating coil has a total of 6 movements during the crystal growth, the temperature gradient in the gas temperature control area is always changing and the temperature gradient is increased; In the long crystal process, the temperature of the upper part of the crucible (deposition area) and the lower part of the crucible (high purity source area) are monitored, the difference between the two is 90-350 degrees Celsius, and the temperature gradient in the gas temperature control area is 3-12 ° C / Cm, the growth rate is 450 μm / hr, and in the cooling process, the completed single crystal can be annealed; in the comparative example of the invention, the same conditions as above are used, but the displacement and position of the heating coil are not regulated, and the upper part of the crucible ) And a lower portion of the crucible (high purity source body region) of the temperature difference was 40 to 80 degrees Celsius, a temperature gradient of 1.3-2.7 ℃ / cm, the growth rate of 200μm / hr.
請參閱第五(a)、五(b)圖所示,為本發明一種比較例碳化矽單晶切片圖、本發明一種實施例碳化矽單晶切片圖。如圖所示,上述實施例、比較例所生長之碳化矽晶體經切片後,可確認晶體內部品質,以比較例所製作之單晶性質,經分析後共五片僅一切片可進入後續加工道次(如紅色框之切片);而以實施例所製作之碳化矽晶體,經分析後共六片且六 片皆可進入後續加工,其品質及可用數量,確實明顯提升,且能有效降低晶種缺陷繼續延伸至晶體內部的比例,証明本發明可有效提升碳化矽晶體品質及晶圓良率。 Please refer to the fifth (a) and fifth (b) drawings, which are diagrams of a comparative example of a single crystal of germanium carbide according to the present invention, and a single crystal chip of a tantalum carbide according to an embodiment of the present invention. As shown in the figure, after the silicon carbide crystals grown in the above examples and comparative examples were sliced, the internal quality of the crystals was confirmed, and the single crystal properties prepared by the comparative examples were analyzed, and only a slice of only one slice was obtained for subsequent processing. Pass (such as the red box); and the carbonized ruthenium crystal prepared in the example, after analysis, a total of six and six The film can be processed into subsequent processing, and the quality and available quantity are obviously improved, and the ratio of the crystal defect to the inside of the crystal can be effectively reduced, which proves that the invention can effectively improve the crystal quality and wafer yield of the tantalum carbide.
本發明為一種用於成長多類型化合物之單晶晶體之製備方法,其功效在於可使晶體成長速率達300-600μm/小時,同時表面具備高密度成長臺階,完成之晶體直徑可達2吋-6吋以上;實施例中原約350μm碳化矽單晶晶圓片經過PVT法歷經約2-3小時後可培養出一晶體,厚度約為0.8-1.5mm,表面具備有大於100階/cm高密度成長臺階,再由此晶體當作一厚晶種可繼續進行碳化矽晶體生長工作,除可排除原生晶種背後孔洞缺陷所造成之延伸六角空缺、碳簇、矽滴沉積,並排除以上缺陷誘發其他多型體產生的可能,提高所生長碳化矽晶體的品質,並可充分使用粉料,因而可適用於大量量產製程。 The invention relates to a method for preparing a single crystal crystal for growing a multi-type compound, which has the effect of allowing the crystal growth rate to reach 300-600 μm/hour, and the surface has a high-density growth step, and the completed crystal diameter can reach 2吋- 6吋 or more; in the embodiment, the original 350μm silicon carbide single crystal wafer can be cultivated for about 2-3 hours after the PVT method, and the thickness is about 0.8-1.5mm, and the surface has a high density of more than 100 steps/cm. After growing up the stairs, the crystal can be used as a thick seed crystal to continue the growth of the bismuth carbide crystal, except for the extension of hexagonal vacancies, carbon clusters, and drip deposits caused by the defects of the pores behind the primary seed crystal, and the above defects are excluded. The possibility of other polytypes is to improve the quality of the crystals of the grown niobium carbide and to make full use of the powder, so that it can be applied to a large number of mass production processes.
上述之實施例僅為例示性說明本創作之特點及功效,非用以限制本創作之實質技術內容的範圍。任何熟悉此技藝之人士均可在不違背創作之精神及範疇下,對上述實施例進行修飾與變化。因此,本創作之權利保護範圍,應如後述之申請專利範圍所列。 The above-described embodiments are merely illustrative of the features and functions of the present invention and are not intended to limit the scope of the technical content of the present invention. Any person skilled in the art can modify and change the above embodiments without departing from the spirit and scope of the creation. Therefore, the scope of protection of this creation should be as listed in the scope of the patent application described later.
S31-S33‧‧‧步驟 S31-S33‧‧‧Steps
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