TWI535887B - Apparatus and method for the synthesis of high-quality of carbon film or inorganic material film - Google Patents

Description

Apparatus and method for synthesizing high quality carbon film or inorganic material film

The invention relates to an apparatus and a method for preparing a high-quality carbon film or an inorganic material film, in particular to a continuous large-area apparatus and method for synthesizing a high-quality carbon film or an inorganic material film.

Graphene is a monoatomic layer of graphite with a two-dimensional structure and many excellent properties such as high carrier mobility, high mechanical strength, high transparency and high thermal conductivity.

So far, many methods for synthesizing graphene have been proposed, including: (1) mechanically stripped graphite method, (2) epitaxial growth method, and (3) chemical vapor deposition (CVD): on catalytic metal. (for example: copper, nickel, iron, etc.) for the synthesis of graphene, (4) chemical stripping method: using graphite oxide to obtain graphene oxide (GO).

Among them, the mechanical exfoliation method and the epitaxial growth method can obtain high-quality (low-defect structure) graphene, but cannot be synthesized in a large area. The chemical vapor deposition method uses a transition metal as a catalyst to synthesize graphene, and the technique for synthesizing graphene by chemical vapor deposition is mainly based on the growth of substrates of Ni and Cu, especially the process of using Cu as a substrate. It becomes the mainstream of the subsequent large-area synthesis of graphene. Recent research has used chemical vapor deposition and catalytic metal-based substrates such as nickel (Ni) and copper (Cu) to grow large-area and high-quality graphene layers (Reina, A.et.al. , Nano Letters 2008, 9, 30-35; Li, X. et. al., Science 2009, 324, 1312-1314; Sukang, B., et. al., Nature; Nanotechnology, 2010, 5, 574-578).

However, Byun, SJet.al. uses a nickel metal substrate and chemical vapor deposition to synthesize graphene (Byun, SJet. al., The Journal of Physical Chemistry Letters 2011, 2, 493-497), its carbon source or inorganic The material source molecules and nickel metal will solid solution at high temperatures, and during the cooling process, carbon atoms will precipitate on the surface of the nickel metal and recombine into the structure of graphene. This method cannot accurately control the amount of carbon atoms precipitated. Therefore, it is difficult to obtain a precisely controlled number of graphene layers.

The synthesis method of Cu as a substrate can obtain a large-area and almost single-layer high-quality carbon film or inorganic material film (>90% coverage area), and thus has good controllability in uniformity and thickness. As far as the current state of the art is concerned, the chemical vapor deposition method using Cu as a substrate has good quality, large area and controllability (Nano Letters, 2009, 9, 4268.).

However, in the synthesis of graphene by chemical vapor deposition, graphene grows around the carbon core and randomly grows on the surface of the catalyst layer. When the graphene grown around the carbon core encounters grain boundaries, the orientation of the grains is non-directional. As a result, graphene is defective, and there is a bottleneck in large-area manufacturing. In addition, batch production is performed in the horizontal furnace tube. Therefore, although the area can reach A4 size, it is not a continuous process, and the estimated cost is still higher than 100. USD/GB, unable to enter the market application.

Therefore, it is extremely necessary in the industry to develop a preparation device capable of producing a large-area high-quality carbon film or an inorganic material film, and has a continuous large-area preparation capability, thereby utilizing the continuous large-area high-quality carbon film or The preparation device of the inorganic material film can simultaneously have both cost and time effect.

The invention provides an apparatus for continuously synthesizing a high quality carbon film or an inorganic material film, comprising an outer cavity, a substrate conveying device, a metal substrate, a temperature control device, a vacuum system, and a gas source In the control, the outer cavity may be provided with an intake gate and an air outlet gate. The substrate transfer device is disposed in the outer cavity, the substrate transfer device includes a take-up member, a plurality of rotating rollers, and a take-up member, and the substrate transfer device has a moving path. Metal substrate It is carried along the moving path, and the temperature control device is correspondingly disposed above or below the substrate conveying device, and when the metal substrate passes, it can be heated. The vacuum system is coupled to the outer chamber, and a gas is drawn in by the intake valve and discharged from the air outlet gate. The gas source controller is coupled to the outer chamber for controlling the supply of a process gas, wherein the process gas has a carbon source or a source of inorganic material. A heating unit is disposed adjacent to the surface of the metal substrate, and has a relative movement with the metal substrate.

In the present invention, the metal substrate comprises any one of copper, iron, cobalt, nickel, gold, silver, platinum, rhodium or a mixture thereof.

In the present invention, the outer cavity body houses at least one pre-processing cavity and one process cavity, and a first buffer zone is located between the pre-processing cavity and the process cavity.

The present invention further includes a cooling chamber, wherein the pre-processing chamber, the processing chamber and the cooling chamber are sequentially disposed along a moving path of the metal substrate, and a second buffer is located in the processing chamber Between the body and the cooling cavity.

The invention further includes a cooling roller, wherein the pretreatment chamber, the processing chamber and the cooling roller are sequentially disposed along a moving path of the metal substrate for cooling the high quality carbon film or inorganic The metal substrate of the material film.

The invention is wherein the heating unit is disposed in front of or behind the cooling cavity.

The invention is wherein the heating unit is disposed in front of or behind the cooling roller.

The invention wherein the cooling roller can be water cooled or air cooled.

The invention wherein the gas flow rate in the first buffer zone and the second buffer zone is between about 0.05 L/min and 1000 L/min.

In the present invention, the pretreatment chamber has a first plasma generating unit and a first filter, and the processing chamber has a second plasma generating unit and a second filter.

In the present invention, the first plasma generating unit and the second plasma generating unit are one-sided plasma sources.

The invention wherein the heating unit is a high temperature tungsten wire.

The invention further includes a transfer device for removing a metal substrate.

In the present invention, the metal substrate is a ruthenium oxide substrate, a quartz substrate, a sapphire substrate, a boron nitride substrate, a glass substrate, a metal substrate, a semiconductor substrate, or a combination thereof.

In the present invention, the carbon source or source of inorganic material may be formed by cracking any of a gas phase carbon-based precursor, a liquid phase carbon-based precursor, or a solid phase carbon-based precursor.

The present invention, wherein the carbon-based precursor is any one of methane, ethylene, acetylene, ethanol, benzene, methanol, a carbon-based polymer, a nanocarbon material, or a mixture thereof.

The invention wherein the source of carbon or inorganic material is any one of nitrogen, boron or a mixture thereof.

In the present invention, the source of the inorganic material is any one of boron nitride, molybdenum disulfide, zinc sulfide, zinc telluride, zinc selenide, tantalum triazine, antimony telluride or a mixture thereof.

10‧‧‧Continuous equipment for the synthesis of high quality carbon or inorganic film

100‧‧‧Continuous equipment for the synthesis of high quality carbon film or inorganic film

105‧‧‧External cavity

110‧‧‧Substrate transfer device

110a‧‧‧Extracting components

110b‧‧‧Winding members

110c‧‧‧Rotating drum

110d‧‧‧Metal substrate

12‧‧‧External cavity

12a‧‧‧Intake gate

12b‧‧‧Exhaust gate

12c‧‧‧ cavity outlet tube

120‧‧‧Pretreatment chamber

120a‧‧‧ entrance

120b‧‧‧Export

120c‧‧‧first plasma source

120d‧‧‧Filter

120e‧‧‧temperature control device

130‧‧‧Processing cavity

130a‧‧‧ entrance

130b‧‧‧Export

130c‧‧‧Second plasma source

130d‧‧‧Filter

130e‧‧‧temperature control device

14‧‧‧Pretreatment chamber

14a‧‧‧ Entrance

14b‧‧‧Export

14c‧‧‧First plasma source

14d‧‧‧first filter

16‧‧‧Processing cavity

16a‧‧‧ entrance

16b‧‧‧Export

16c‧‧‧Second plasma source

16d‧‧‧Second filter

160a‧‧‧intake gate

160b‧‧‧Exhaust gate

160c‧‧‧ cavity outlet tube

165‧‧‧vacuum system

170‧‧‧temperature control device

18‧‧‧ Cooling chamber

18a‧‧‧ entrance

18b‧‧‧Export

20‧‧‧First buffer zone

200‧‧‧Continuous equipment for the synthesis of high quality carbon or inorganic film

210‧‧‧Processing cavity

210a‧‧‧Intake gate

210b‧‧‧Exhaust gate

22‧‧‧second buffer zone

222‧‧‧ first buffer zone

223‧‧‧second buffer zone

224‧‧‧ third buffer zone

220‧‧‧ Plasma generation unit

230‧‧‧Filter

235‧‧‧ Plasma

24a, 24b, 24c‧‧‧ temperature control device

240‧‧‧Substrate transfer device

240a‧‧‧Extracting components

240b‧‧‧ involved components

240c‧‧‧Rotating drum

240d‧‧‧Cooling wheel

240e‧‧‧Metal substrate

250‧‧‧Cooling wheel

26‧‧‧ Vacuum system

260‧‧‧vacuum system

270‧‧‧ arrow

280‧‧‧ arrow

28‧‧‧Substrate transfer device

28a‧‧‧Extracting components

28b‧‧‧Winding members

28c‧‧‧Rotating roller

28d‧‧‧Metal substrate

30a‧‧‧Air source controller

30b‧‧‧Air source controller

30c‧‧‧Air source controller

31a‧‧‧Air source controller

31b‧‧‧Air source controller

340‧‧‧temperature control device

340a‧‧‧heating tube

4‧‧‧heating unit

450‧‧‧Cooling wheel

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the synthesis time, gas type and temperature of each stage of the present invention.

2 is a schematic view showing the apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to an embodiment of the present invention.

3 is a schematic view showing the apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to another embodiment of the present invention.

4 is a schematic view showing an apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to still another embodiment of the present invention.

FIG. 5 is a schematic view showing the apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to still another embodiment of the present invention.

FIG. 6 is a schematic view showing that a metal substrate having a high quality carbon film or an inorganic material film of the present invention does not pass through a heating unit.

FIG. 7 is a schematic view showing the metal substrate of the present invention covered with a high quality carbon film or an inorganic material film after passing through a heating unit.

The present invention will be explained in the following examples, and the detailed description and the accompanying drawings are intended to further illustrate the manner, means and function of the present invention. However, the description of the embodiments is merely illustrative of the technical contents of the present invention and the effects thereof, and is not intended to limit the present invention.

The apparatus or method for continuously synthesizing a high-quality carbon film or an inorganic material film of the present invention can be applied to physical vapor deposition, chemical vapor deposition, epitaxial growth, molecular beam epitaxy or monoatomic layer deposition. Although the invention continuously synthesizes a high-quality carbon film or an inorganic material film on a metal substrate by chemical vapor deposition, other methods can continuously synthesize a high-quality carbon film or an inorganic material film without departing from the present invention. Inventive spirit. The so-called high-quality carbon film or inorganic material film may be a carbon material such as graphene, and the metal substrate may be a metal substrate or a metal film on the substrate. The so-called metal may be a transition metal material such as iron, cobalt or nickel.

The method for synthesizing a high-quality carbon film or an inorganic material film may include the steps of first introducing a hydrogen gas into a chemical vapor deposition reactor, wherein the pressure of the hydrogen gas is in a standard state range of 10 mTorr to 760 Torr, preferably 760 Torr. The constant flow range is 5-1000 sccm (standard cubic centimeter per minute), preferably 50 sccm, and the access time is 5 sec - 2 hr, preferably 50 minutes. A metal substrate is thermally annealed at a temperature in the range of from 150 to 1300 ° C, preferably at 1000 ° C, for an annealing time of from 5 sec to 2 hr, preferably 40 minutes, to remove organic materials and oxides from the surface. Then, a mixed gas having a carbon source or an inorganic material source is introduced into the reactor, and a high-quality carbon film or an inorganic material film is grown at a temperature ranging from 150 to 1300 ° C, preferably 1000 ° C. The mixed gas flow rate of the carbon source or inorganic material source ranges from 5 to 1000 sccm, preferably 60 sccm, and the hydrogen flow rate is 15 sccm. After the high-quality carbon film or inorganic material film is synthesized, the synthesized high-quality carbon film or inorganic material film is locally reheated by a reheating unit to reduce defects caused by grain boundaries, and further optimize high-quality carbon film or inorganic The defect that the material film is incompletely bonded between carbon atoms during crystallization, this step can improve the coverage and quality of the high-quality carbon film or inorganic material film again.

The carbon source or inorganic material source used in the present invention may be formed by cracking any one of a gas phase carbon-based precursor, a liquid phase carbon-based precursor, or a solid phase carbon-based precursor, wherein the carbon-based precursor is Any of methane, ethylene, acetylene, ethanol, benzene, methanol, a carbon-based polymer, a nanocarbon material, or a mixture thereof. Wherein the source of carbon or inorganic material is any one of doped with nitrogen, boron or a mixture thereof. Wherein the inorganic material source is any one of boron nitride, molybdenum disulfide, zinc sulfide, zinc telluride, zinc selenide, tantalum triazine, antimony telluride or a mixture thereof. The metal substrate may be any one of copper, iron, cobalt, nickel, gold, silver or a mixture thereof, and the substrate may be a ruthenium oxide substrate, a quartz substrate, a sapphire substrate, or a boron nitride. Any one of a substrate, a glass substrate, a metal substrate, a semiconductor substrate, or a combination thereof.

Referring first to FIG. 1, the method for continuously synthesizing a high quality carbon film or an inorganic material film of the present invention can be mainly divided into three processing stages to complete the process. The first stage is hydrogen pretreatment, and a mixed gas containing hydrogen, such as a mixed gas of hydrogen and argon, please refer to the part of Roman numerals I and II shown in Fig. 1, which will be the surface of the metal substrate. Pre-reduction; then enter the second stage, please refer to the part of Roman numeral III in Figure 1, the reaction phase is introduced into the reaction gas (methane, hydrogen, argon), wherein the carbon source or inorganic material source reaction gas in addition to methane It is also possible to use acetylene or ethylene to grow high-quality carbon film or inorganic material film in this stage; the third stage is the cooling stage, please refer to the part of Roman numeral IV in Figure 1, and pass the hydrogen-containing mixed gas. For example, a mixed gas of hydrogen and argon, or an inert gas such as nitrogen or argon, is used to stabilize a high-quality carbon film or a film of an inorganic material. The first stage is first In a hydrogen atmosphere, the metal substrate is heated for 40 minutes, the ambient temperature of the metal substrate is raised from room temperature to 1025 ° C, and then the metal substrate is subjected to a hydrogen atmosphere at a constant temperature of 1025 ° C for 20 minutes. Pre-treatment; then, in the second stage, the reaction gas is introduced at a constant temperature of 1025 ° C for 20 minutes to grow a high-quality carbon film or inorganic material film on a metal substrate; finally, enter the third stage, Argon gas was introduced and the metal substrate was subjected to a temperature reduction treatment for 40 minutes, and gradually decreased from 1025 ° C to room temperature below 25 ° C.

The apparatus and method for continuously synthesizing high-quality carbon film or inorganic material film according to the present invention is a roll-to-roll device, which adopts roller transmission as a structure for flexible substrate retracting and conveying. And related processes such as auxiliary processing. The roll-to-roll device uses a roller to control the movement of the soft substrate and maintains a stable transfer speed, and controls various parameters for precision machining. The metal substrate may be a flexible flexible substrate having a length of several tens of meters and being crimped into a cylindrical shape before the process, in the process of synthesizing a high quality carbon film or an inorganic material film. Can be continuously deployed, the carbon source or inorganic material source gas in the reactor can be deposited on the surface of the continuously passing metal substrate to form a high quality carbon film or inorganic material film, which is cooled to a temperature range of 25-300 °C, preferably 25 ° C, is then crimped into a cylindrical shape, which is a roll-to-roll continuous synthesis of high-quality carbon film or inorganic material film.

The roll-to-roll continuous synthesis of high-quality carbon film or inorganic material film has the characteristics of large area, high volume production, low cost, etc. It is one of the main technical methods for commercial products to be continuously produced. However, in the case of using this roll-to-roll device, the corresponding cavity must be provided to correspond to the process of continuously synthesizing a high-quality carbon film or an inorganic material film, and a corresponding number must be set. A vacuum pump is used to control the chemical vapor deposition atmosphere in different chambers, and a buffer zone is also required between the different chambers to block the chemical vapor deposition gases of different chambers.

Therefore, in the above-described roll-to-roll continuous chemical vapor deposition apparatus, since a plurality of cavities, a plurality of vacuum pumps, and a buffer zone are required, it is necessary to chemically vaporize a gas in a plurality of cavities. The atmosphere is properly controlled. With respect to the foregoing and other technical contents, features and effects of the present invention, the apparatus and method for continuously synthesizing a high quality carbon film or inorganic material film of the present invention will be described in detail below with reference to four embodiments.

In the first preferred embodiment of the present invention, a device including a roll-to-roll device and three process chambers is used to continuously synthesize a high-quality carbon film or an inorganic material film over a large area. Please refer to FIG. 2, which is a schematic diagram of a device 10 for continuously synthesizing a high-quality carbon film or an inorganic material film according to a first preferred embodiment of the present invention, which needs to be described in advance, although only in FIG. The main components of the apparatus 10 for describing the continuous synthesis of a high quality carbon film or an inorganic material film of the present invention are shown. However, those skilled in the art should readily infer the present invention based on the relevant knowledge. All components of the apparatus 10 for continuous synthesis of high quality carbon film or inorganic material film. Moreover, it should be noted that those illustrated in the drawings are illustrative of the embodiment of the invention, which is for illustrative purposes only and is not limited by the structure.

The apparatus 10 for continuously synthesizing a high quality carbon film or an inorganic material film mainly has an outer cavity 12, a substrate transfer device 28, a vacuum system 26, a gas source controller 30a, 30b, 30c, a front The processing chamber 14, a process chamber 16, a cooling chamber 18, a first buffer 20, a second buffer 22, and a temperature control device 24a, 24b, 24c.

As shown in Fig. 2, the substrate transfer device 28 is used to transport the metal substrate 28d along a moving path, such as the direction of the arrow. The substrate transfer device 28 is composed of a take-up member 28a, a take-up member 28b, and a rotary drum 28c. The metal substrate 28d is unwound from a take-up member 28a by rotating the drum 28c, and is moved along the moving path (such as the direction of the arrow) in the outer chamber 12 through the rotating drum 28c, and finally passed through the take-up member 28b. In a tube shape. Among them, the unwinding member 28a and the take-up member 28b are respectively installed upstream and downstream of the apparatus 10 for continuously synthesizing a high-quality carbon film or an inorganic material film. Wherein, the take-up member 28a and the take-up member 28b are both suitable for winding the metal substrate 28d, and the metal substrate 28d is fixed at both ends to the take-up member 28a and the take-up member 28b, respectively. Volume structure The rotation of the piece 28b, the metal substrate 28d will be continuously moved by the take-up member 28a to the take-up member 28b. The unwinding member 28a and the take-up member 28b are, for example, composed of a bearing and a runner (not shown), wherein the bearing is pivotally mounted on the apparatus 10 for continuously synthesizing a high-quality carbon film or an inorganic material film, and the runner is mounted. On the bearing, the metal substrate 28d is wound around the runner. Rotation of the take-up member 28b can be achieved by attaching the take-up member 28b to a drive member (not shown), for example, by connecting the bearing of the take-up member 28b to the motor via a suitable gear arrangement, The rotation of the motor drives the rotation of the take-up member 28b.

The outer cavity 12 has an air intake gate 12a and an air outlet gate 12b, and is internally provided with a front processing chamber 14, a processing chamber 16, and a cooling chamber 18. The pre-processing chamber 14, the process chamber 16 and a cooling chamber 18 may be disposed along a moving path of the metal substrate 28d, wherein the metal substrate 28d may sequentially pass through the pre-processing chamber according to the moving path. 14. Process chamber 16 and cooling chamber 18. A temperature control device 24a, 24b, 24c can heat the metal substrate 28d.

A first buffer zone 20 is defined between the pre-treatment chamber 14 and the process chamber 16; a second buffer zone 22 is defined between the process chamber 16 and the cooling chamber 18. The first buffer zone 20 is configured to insulate the gas of the pre-treatment chamber 14 and the process chamber 16 from each other, and the second buffer zone 22 isolates the gases of the process chamber 16 and the cooling chamber 18 from flowing into each other. The gas system in the first buffer zone 20 flows in a direction away from the outlet 14b of the pretreatment chamber 14 and the inlet 16a of the process chamber 16; the gas system in the second buffer zone 22 is remote from the process chamber 16 outlet 16b and The flow of the cooling chamber 18 in the direction of the inlet 18a prevents the gas flowing out of the pre-processing chamber 14, the process chamber 16 and the cooling chamber 18 from contaminating each other, wherein the gas flow rate in the second buffer zone 22 of the first buffer zone 20 is approximately 0.05 L / min - 1000 L / min.

The pre-processing chamber 14, the processing chamber 16 and a cooling chamber 18 are disposed along the moving path of the metal substrate 28d, so that the metal substrate 28d can sequentially pass through the pre-processing chamber 14 and the processing chamber according to the moving path. Body 16 and cooling chamber 18. The metal substrate 28d, through the driving of the take-up member 28a and the take-up member 28b, will continuously pass through the pre-treatment chamber 14, the process chamber 16, and a cooling chamber 18. The metal substrate 28d enters from the inlet 14a of the pretreatment chamber 14, and the pretreatment chamber 14 completes the pumping down pressure. The temperature was raised for 40 minutes, and the ambient temperature of the metal substrate 28d was raised from room temperature to 1025 ° C. Then, the metal substrate 28 d was pretreated for 20 minutes at a constant temperature of 1025 ° C. To remove organic matter and oxides from the surface. The hydrogen gas is introduced into the pretreatment chamber 14 by the gas source controller 30a, and the hydrogen gas is introduced at a fixed flow rate for 50 minutes at a flow rate of 50 sccm (standard cubic centimeter per minute), that is, the flow rate per minute is under standard conditions (pressure 760 Toor). 50 cubic centimeters, the pretreatment chamber 14 can perform the first stage pretreatment process on the metal substrate 28d; after the first stage pretreatment process, the metal substrate 28d exits the outlet 14b of the pretreatment chamber 14. Leaving and entering the process chamber 16 via the inlet 16a, when the metal substrate 28d is moved to the process chamber 16, a chemical vapor deposition process of the metal substrate 28d is performed, that is, a high quality carbon film or inorganic material is performed. The thin film synthesis process, the metal substrate 28d first passes through the first buffer 20 between the pre-processing chamber 14 and the process chamber 16 before entering the process chamber 16, and the first buffer 20 is a pumping buffer. The region, by a pumping action, causes the region to form a relative negative pressure on the outlet 14b and the inlet 16a, thereby avoiding cross-contamination of the different atmospheres of the pre-processing chamber 14 and the processing chamber 16 in different atmospheres, wherein the dotted arrow of FIG. table Shows the direction of the airflow when the pumping is actuated. In addition, it is to be noted that the temperature in the pretreatment chamber 14 is adjusted by the temperature control device 24a, and the metal substrate 28d enters the process chamber 16 having process setting parameters, for example, the process chamber 16 is at a constant temperature of 1025 ° C. In the state, a reaction gas (methane, hydrogen) is introduced for 20 minutes to grow a high-quality carbon film or a film of an inorganic material on the metal substrate 28d, wherein the reaction gas (methane, by the gas source controller 30b) Hydrogen is introduced into the process chamber 16, and a large-area high-quality carbon film or inorganic material film is deposited on the metal substrate 28d under appropriate conditions, wherein the methane flow rate is 60 sccm and the hydrogen flow rate is 15 sccm; the second stage is of high quality. After the carbon film or inorganic material film synthesis process is finished, the metal substrate 28d having a high quality carbon film or inorganic material film exits from the outlet 16b of the process chamber 16 and enters the cooling chamber 18 via the inlet 18a, high quality carbon. The film or inorganic material film moves to the cooling cavity 18 when the metal substrate 28d is passed, argon gas is introduced, and the metal substrate 28d is cooled for 40 minutes, and gradually reduced from 1025 ° C to the chamber. Hereinafter, the substrate 28d with the metal 18 will go through before entering the cooling chamber is located The second buffer zone 22 between the process chamber 16 and the cooling chamber 18, the second buffer zone 22 is also a pumping buffer, and the area is firstly opposed to the outlet 16b and the inlet 18a by a pumping action. Negative pressure can avoid cross-contamination of different atmospheres of the process chamber 16 and the cooling chamber 18, wherein the dotted arrow in FIG. 2 indicates the direction of the air flow during the pumping operation, and then the metal substrate 28d enters the cooling. In the cavity 18, a large amount of argon gas is introduced into the cooling cavity 18 by the gas source controller 30c to cool the metal substrate for 40 minutes, gradually decreasing from 1025 ° C to room temperature, and finally, having high quality. The metal substrate 28d having a carbon film or an inorganic material film is accommodated in a roll by the take-up member 28b.

At the inlet 14a of the pre-treatment chamber 14 and the outlet 18b of the cooling chamber 18, it is also a pumping buffer (not shown), which is caused by the pumping action to respectively form the area to the inlet 14a and the outlet 18b. Negative pressure can prevent cross-contamination of the pre-treatment chamber 14 with the gas within the cooling chamber 18 and the gas within the outer chamber 12.

In other embodiments, in addition to methane, acetylene or ethylene may be used as a carbon source or an inorganic material source reaction gas to grow a high quality carbon film or an inorganic material film. Additionally, it is to be noted that the temperature within the process chamber 16 and the cooling chamber 18 can also be adjusted by the temperature control devices 24b, 24c. The vacuum system 26 draws in and exhausts gas through the intake valve 12a and the outlet valve 12b of the outer chamber 12 to maintain a vacuum state. The vacuum system 26 can also be directly connected to the pre-processing chamber 14, the processing chamber 16, and the cooling chamber 18, respectively, and if necessary, extract the process gases of the pre-processing chamber 14, the processing chamber 16, and the cooling chamber 18. To maintain a vacuum. Among them, the vacuum system 26 can be a combination of a common mechanical pump and a diffusion pump.

As shown in FIG. 2, the air source controllers 30a, 30b, 30c provide air source control of the pre-processing chamber 14, the process chamber 16, and the cooling chamber 18. The gas source controllers 30a, 30b, 30c are disposed in the outer chamber 12 for providing a gas required for continuous synthesis of a high quality carbon film or an inorganic material film. It is particularly noteworthy that the operating parameters of the gas source controllers 30a, 30b, 30c are not identical to each other when the continuous synthesis of the high quality carbon film or the inorganic material film is performed, wherein the operating parameters are, for example, 30a is a mixed gas containing hydrogen, a flow rate ranging from 0.5 sccm to 500 sccm, preferably 20 sccm; and 30 b is a mixed gas CH4/H2/Ar containing a carbon source, wherein the carbon source is from 0.5 sccm to 800 sccm, preferably 20 sccm, hydrogen 0.5 sccm-1000 sccm, preferably 20 sccm, argon gas 0.5 sccm-1000 sccm, preferably 900 sccm; 30c is argon or nitrogen 0.5 sccm-1000 sccm, preferably argon 500 sccm. The gas source controllers 30a, 30b, 30c are configured to control operating parameters for supplying at least one gas source during chemical deposition, wherein the control member controls the operating parameters supplied to the at least one gas source during chemical deposition to be different from each other, for performing chemical vapor deposition The type and mixing ratio of the chemical vapor deposition atmosphere to be used can be appropriately selected and set according to the requirements of the actual chemical vapor deposition process.

As shown in FIG. 3, which is a second preferred embodiment of the present invention, the difference from the first preferred embodiment is that the present embodiment continuously uses Plasma Assisted Chemical Vapor Deposition (CVD). A high-quality carbon film or an inorganic material film is synthesized on a metal substrate 28d. In the plasma-assisted chemical vapor deposition method, the microwave plasma auxiliary system is mainly used, and the continuous roll-to-roll device is used to achieve low temperature. Continuously growing high-quality carbon film or inorganic material film on the metal substrate 28d, the plasma can help crack the desired carbon source or inorganic material source, and assist in low temperature synthesis.

In this embodiment, the pre-processing chamber 14 further includes a first plasma source 14c and a first filter 14d. The processing chamber 16 includes a second plasma source 16c and a second filter 16d. In this embodiment, a gas free environment is provided by the plasma source to reduce the process temperature of the continuous synthesis of the high quality carbon film or the inorganic material film by the formation of the plasma. In the present embodiment, the plasma-assisted chemical vapor deposition method continuously synthesizes a high-quality carbon film or an inorganic material film, and the gas is dissociated by an electric field to generate electrons and ions. When these electrons are accelerated by an electromagnetic field such as radio frequency or microwave, the collision gas will be collided. Produce more ions and electrons to produce plasma. The filter is disposed between the plasma source and the metal substrate 28d to reduce damage and damage of high quality carbon film or inorganic material film by ion bombardment and UV photon. For the present embodiment, the pretreatment chamber 14 is first subjected to a pretreatment of the metal substrate 28d, and the pretreatment chamber 14 is subjected to pumping to reduce the pressure, and a temperature rising treatment is performed for 40 minutes to form a metal substrate 28d. Where you are The ambient temperature is raised from room temperature to 1025 ° C, and then the metal substrate 28 d is pretreated with hydrogen plasma at a constant temperature of 1025 ° C for 20 minutes to remove organic substances and oxides from the surface, that is, The use of plasma to assist in the cracking of hydrogen, in addition to helping to reduce the process temperature, can simultaneously form a reactive ion cluster of hydrogen to carry out the reduction of the 28d surface of the metal substrate; and then, a deposition process of the substrate 28d having the metal in the process chamber 16 is performed. In the stage, that is, the reaction gas (methane, hydrogen, argon) is introduced into the process chamber 16, wherein the carbon source or the inorganic material source reaction gas may be methane, acetylene, ethylene, etc., thereby depositing a process stage in the metal-based group. A high-quality carbon film or an inorganic material film is synthesized on the material 28d, and is continuously synthesized on a metal substrate 28d by plasma assisted chemical vapor deposition (PACVD) in the process chamber 16. High-quality carbon film or inorganic material film, that is, a mixed gas of methane and hydrogen is used as a carbon source or inorganic in a process chamber 16 using plasma-assisted chemical vapor deposition. The source gas is grown at a temperature of 1000 ° C to produce a high-quality carbon film or a thin film of an inorganic material film having a methane flow rate of 60 sccm and a hydrogen flow rate of 15 sccm, and applying a microwave of 2.45 GHz to generate a plasma, and the plasma provides cracked carbon. The energy of the source or inorganic material source gas is deposited on the surface of the metal substrate 28d by the cracked carbon source or the inorganic material source gas, and the surface of the metal substrate 28d can be synthesized into a high quality carbon film or an inorganic material film; Finally, a cooling treatment of a high-quality carbon film or an inorganic material film is performed on the cooling chamber 18 to lower the temperature to stabilize the high-quality carbon film or the inorganic material film.

However, the first plasma source 14c, the first filter 14d, the second plasma source 16c, and the second filter 14d are merely auxiliary conditions of the present invention, and do not limit the invention to be achieved by using plasma.

It should be noted here that the above-mentioned FIG. 2 and FIG. 3 are a roll-to-roll continuous deposition apparatus, but the present invention is not limited thereto, and the substrate transfer device 28 of the present invention can be used in the art. A conveyor belt conveyor system that is often used. Further, the metal substrate 28d is not limited to a continuous strip shape, and the metal substrate 28d is, for example, a sheet having a specific size, carried by a carrier, and then the carrier is placed on a conveyor belt conveying system. Transfer the substrate and make the process chamber of the present invention The body is disposed on the substrate transport/moving path of the conveyor belt conveyor system. From the above, it will be appreciated that as long as the process chamber of the present invention is disposed on various known continuous substrate transfer devices, it is possible to construct a continuous process chamber apparatus that achieves the objectives of the present invention.

As shown in FIG. 2 and FIG. 3, the pre-processing chamber 14, the processing chamber 16, and the cooling chamber 18 can be connected to the vacuum system 26 through the chamber outlet tube 12c, and the pumping opening and closing can be performed in the chamber outlet tube. Set the valve anywhere on the 12c and adjust it according to the user's needs.

After explaining the embodiment of the three cavities of FIG. 2 and FIG. 3, in the third preferred embodiment of the present invention, please refer to the apparatus for continuously synthesizing high quality carbon film or inorganic material film of the two cavities of FIG. Example description. As shown in FIG. 4, it is a schematic diagram of an apparatus 100 for continuously synthesizing a high quality carbon film or an inorganic material film according to the present invention. It should be noted in advance that although only the present invention is illustrated in FIG. 4 of the present invention. The main components of the apparatus 100 for continuously synthesizing a high quality carbon film or an inorganic material film, however, those skilled in the art should be able to easily infer the continuous synthesis of high quality carbon of the present embodiment based on the relevant knowledge. All components of the apparatus 100 for film or inorganic material film. Moreover, it should be noted that the structures shown in the drawings are selected for the purposes of this embodiment, and are for illustrative purposes only, and the present invention is not limited by such structures.

4 is a third preferred embodiment of the present invention. The apparatus 100 for continuously synthesizing a high quality carbon film or inorganic material film of the present invention is a roll-to-roll continuous synthetic high quality carbon film or inorganic material film device. The device 100 for continuously synthesizing a high-quality carbon film or an inorganic material film mainly has an outer cavity 105 having an intake gate 160a and an air outlet gate 160b; the outer cavity 105 has at least one pre-processing cavity 120 and a process cavity therein. The body 130 is composed of a take-up member 110a, a take-up member 110b, and a rotating drum 110c; a vacuum system 165, a gas source controller 31a and 31b; a first buffer 222; a second The buffer zone 223; and a temperature control device 14; a cooling wheel 250, the device 100 for continuously synthesizing a high quality carbon film or an inorganic material film is prepared by using two cavities to complete a high quality carbon film or an inorganic material film.

As shown in FIG. 4, the third preferred embodiment is the same as the first and second embodiments, and the differences are only described. The temperature control device 14 is disposed between the pre-processing chamber 120 and the processing chamber 130, and the pre-processing chamber 120 and the processing chamber 130 are disposed on a moving path of a metal substrate 110d, that is, with a metal By driving the unwinding member 110a and the take-up member 110b, the substrate 110d will continuously pass through the inlet 120a of the pre-treatment chamber 120, the outlet 120b, the inlet and outlet 130a of the processing chamber 130, and the outlet 130b. When the metal substrate 110d moves in the process chamber 130, a high quality carbon film or an inorganic material film of the metal substrate 110d is deposited.

The function of the first buffer area 222, the second buffer area 223, and the third buffer area 224 of the present embodiment is similar to that of the first buffer area 20 and the first buffer area 22 of FIG. 2 and FIG. 3, and details are not described herein again.

In the third preferred embodiment of FIG. 4, the metal substrate 110d is first treated in the pretreatment chamber 120 by the first plasma source 120c. The first plasma source 120c may be a hydrogen plasma. The source, that is, a mixed gas of hydrogen and argon is injected into the pretreatment chamber 120 at a temperature of 600 ° C, wherein the plasma power is at most 150 W. Thereafter, the metal substrate 110d pretreated by the first plasma source 120c and the filter 120d successively leaves the pretreatment chamber 120 and enters the process chamber 130. Similarly, the second chamber is also passed through the processing chamber 130. The slurry source 130c and the filter 130d are processed without breaking the vacuum during the process. Please note that the metal substrate 110d of the present embodiment grows a high-quality carbon film or an inorganic material film in the process chamber 130 at a temperature of 1000 ° C and a pressure of 200 mTorr to 10 Torr, and the reaction gas is a long air curtain ( Shower) wherein the reaction gas is a mixed gas of methane, hydrogen, and argon. The metal substrate 110d has a thickness of 25 μm, a width of at most 21 cm, a film growth working area of 70 cm x 30 cm, and a scrolling speed of at least 5 mm/s and a maximum of 100 mm/s. In addition, the heights of the first plasma source 120c and the second plasma source 130c of the present embodiment and the metal substrate 110d can be adjusted. In particular, a cooling wheel 250 is disposed between the process chamber 130 and the take-up member 110b of the present embodiment, and the metal substrate 110d having a high-quality carbon film or an inorganic material film is grown in an air-cooled or water-cooled manner. It is cooled to 200 degrees or less before being taken up by the take-up member 110b.

The first plasma source 120c, the first filter 120d, the second plasma source 130c, and the second filter 130d described in this embodiment are only auxiliary conditions of the present invention, and do not limit the invention to use plasma to achieve . In another embodiment, the pre-processing chamber 120 includes a temperature control device 120e, and the processing chamber 130 includes a temperature control device 130e, functions of the temperature control device 120 and the temperature control device 130e, and first and second preferred The temperature control devices 24a, 24b, and 24c of the embodiment have the same functions, and are not described herein again.

It should be particularly noted that in the third comparative embodiment of FIG. 4, the vacuum system 165 draws in and discharges the process gas by the intake valve 160a and the outlet valve 160b of the outer chamber 105 to maintain the vacuum state. In other embodiments, the vacuum system 165 also has a pipeline for independently connecting the process chambers. As shown in FIG. 4, the chamber outlet tubes 160c are directly connected to the pretreatment chamber 120 and the process chamber 130, respectively, when necessary. The process gas of the pre-processing chamber 120 and the processing chamber 130 is respectively extracted to maintain a vacuum state, and the cavity outlet pipe 160c may also be provided with a gas valve, which is convenient for the technician to adjust and use.

In another embodiment, the pre-treatment chamber 120 and the process chamber 130 may also have a common temperature control device 170. The temperature control device 170 can be an Infra-red (IR) heater that utilizes the principle of electromagnetic radiation heat transfer to directly transfer heat to the pre-treatment chamber 120 and the process chamber 130. In the present embodiment, the positional arrangement of the pretreatment chamber 120, the process chamber 130, and the temperature control device 170 is merely an example, as long as the configuration of the continuous large-area synthesis of a high-quality carbon film or an inorganic material film is In the spirit of the invention, after explaining the embodiment of the two cavities of FIG. 4, reference is now made to the apparatus embodiment of one of the process chambers of FIG. A fourth preferred embodiment of the present invention, as shown in FIG. 5, is a schematic diagram of a device 200 for continuously synthesizing a high-quality carbon film or an inorganic material film according to the present invention. It should be noted in advance that although in FIG. 5 of the present case, Only the main components of the apparatus 200 for describing the continuous synthesis of high quality carbon film or inorganic material film of the present invention are shown. However, those skilled in the art should be able to easily infer according to the relevant knowledge. All of the members of the apparatus 200 for continuously synthesizing a high quality carbon film or an inorganic material film of this embodiment. Moreover, it should be noted that the one shown in the figure is selected for the present invention. The structure of the embodiment is for illustrative purposes only and is not limited by such structure.

In the embodiment of Fig. 5, the apparatus 200 for continuously synthesizing a high quality carbon film or inorganic material film of the present invention is a roll-to-roll continuous synthetic high quality carbon film or inorganic material film device. The apparatus 200 for continuously synthesizing a high quality carbon film or an inorganic material film mainly has a process chamber 210, a gas source controller (not shown), and a plasma generating unit 220 having a filter 230. Please note that the continuous synthesis of high quality carbon film or inorganic material film device 200 uses a cavity to complete the preparation of a high quality carbon film or inorganic material film.

As shown in FIG. 5, the process chamber 210 has an intake valve 21021 and an air outlet gate 210b. The plasma generating unit 220 having the filter 230 is connected to the processing chamber 210. The process chamber 210 houses at least one substrate transfer device 240, a vacuum system 260, a cooling wheel 450, and a temperature control device 340. The plasma generating unit 220 of the filter 230 forms a plasma 235 in the processing chamber 210. The substrate transfer device of this embodiment includes a take-up member 240a, a take-up member 240b, a rotating drum 240c, and a cooling wheel 450 for transferring a metal-containing substrate 240e. The process gas can enter and exit the process chamber 210 via the intake gate 210a and the outlet valve 210b in the direction of arrow 270 and arrow 280. The temperature control device 340 includes a heating lamp tube 340a for heating the metal substrate 240e. Among them, the cooling wheel 450 is for conveying a metal substrate 240e which simultaneously cools a high quality carbon film or an inorganic material film.

In the embodiment of FIG. 5, the metal substrate 240e is grown in the process chamber 210 to form a high-quality carbon film or an inorganic material film at a temperature of 600 to 1000 ° C and a pressure of 200 mTorr to 10 Torr, and the reaction gas is elongated. A type of shower is injected, wherein the reaction gas is a mixed gas of methane, hydrogen, and argon. The metal substrate 240e has a thickness of 25 μm, a width of at most 21 cm, a film growth working area of 70 cm x 30 cm, and a scrolling speed of at least 5 mm/s and a maximum of 100 mm/s. In addition, the height of the plasma 235 and the metal substrate 240e of the present embodiment can be adjusted. Please pay special attention to the fact that the cooling wheel 450 of the present embodiment is a gas-cooled or water-cooled method for growing a metal of a high-quality carbon film or an inorganic material film. The material 240e is cooled to 200 degrees or less before being taken up by the take-up member 240b.

In the embodiment of FIG. 5, the metal substrate 240e may be replaced with a carbon film structure (for example, amorphous carbon: such as a sputtered carbon layer, a high-temperature carbonized polymer (PMMA), etc.). A metal substrate such as copper foil or nickel foil. Then, a mixed gas of hydrogen and argon (or a gas containing hydrogen) is introduced into the process chamber 210 at 800 to 1000 ° C as a reaction gas to convert the carbon layer on the copper foil into a high-quality carbon film. Or an inorganic material film structure, combined with a continuous roll-to-roll system, to obtain a continuous synthesis of large-area high-quality carbon film or inorganic material film.

Heating Unit The apparatus 10, 100, 200 for continuously synthesizing a high quality carbon film or an inorganic material film according to each of the above embodiments of the present invention may include a heating unit 4 (shown in FIG. 5), and the heating unit 4 is shown in FIG. 4 is not shown for simplicity and is only illustrated in FIG. 5, but each of the embodiments may have different component units and have the purpose of the invention. The heating unit 4 may be made of a high temperature resistant tungsten material or a quartz rod having an electric group wire as a second temperature control device, which may be disposed on the upper and lower surfaces of the copper foil which is covered with a high quality carbon film or an inorganic material film. The heating unit 4 can be heated to increase the temperature of the metal-containing substrate 240e which has been covered with the high-quality carbon film or the inorganic material film to a temperature at which the high-quality carbon film or the inorganic material film can be crystallized. The heating unit 4 of the present invention is not limited to the scope of the present invention as long as it has the purpose of providing a high-temperature heat source, that is, the invention of the component unit.

The heating unit 4 may be disposed in front of or behind the cooling roller 240d. In FIG. 5, the heating unit 4 may be disposed before the cooling roller 240d (in FIGS. 2 and 3, it may be disposed before the inlet 18a or after the outlet 18b; In Fig. 4, it may be provided before or after the cooling wheel 250), and the heating unit 4 performs a micro-zone heating on the metal-coated substrate 240e which has been covered with a high-quality carbon film or an inorganic material film. The heating unit 4 can be scanned on a metal substrate 240e that has been covered with a high quality carbon film or an inorganic material film to promote surface graphitization of the metal substrate 240e. In various embodiments of the present invention, whether the heating unit 4 is moved relative to a metal substrate 240e that has been covered with a high quality carbon film or inorganic material film or has been covered with a high quality carbon film or inorganic material film. Substrate 240e relative to heating The movement of unit 4 does not affect the spirit of the invention. In various embodiments of the present invention, the manner of movement is from top to bottom, bottom to top, from inside to outside, from outside to inside, or in a drawing manner, as long as it can cover a high quality carbon film or The metal substrate 240e of the inorganic material film, heated to the crystallization temperature, is within the scope of the present invention.

As shown in FIG. 6, the heating unit 4 is a linear heating rod, and the heating unit 4 is fixed at a position, and the metal substrate 240e which has covered the high-quality carbon film or the inorganic material film continuously moves in the same direction (arrow direction) When the heating unit 4 is locally heated, for example, 1000 ° C, an appropriate amount of carbon is dissolved in the metal again, and the heating unit 4 is controlled and the metal substrate having the high quality carbon film or the inorganic material film is covered. The relative speed of 240e can control the quality of carbon film or inorganic material film. As shown in FIG. 6, the carbon film or the inorganic material film that has not passed through the heating unit 4 is defective in many grain boundaries. When reheated by the heating unit 4, as shown in FIG. 7, the carbon film or the inorganic material film grain boundary The number of defects on the surface is reduced, and a carbon film or an inorganic material film having a uniform and large area can be synthesized.

In the conventional chemical vapor deposition method, a carbon thin film or an inorganic material thin film is entirely heated, and a carbon thin film or an inorganic material thin film is grown in a polycrystalline form. According to the present invention, the amount of carbon can be redissolved in the metal by using the heating unit 4, and therefore, the defect of the grain boundary can be improved by the heating unit 4 according to the present invention, and the synthesis of a large area can be realized.

According to the present invention, the relative movement of the heating unit 4 and the metal-containing substrate 240e which has been covered with the high-quality carbon film or the inorganic material film has a predetermined directivity, so that the carbon film or the inorganic material film grains are each arranged with a predetermined directivity. . That is, the crystal grains have a directivity consistent with the movement of the heating unit 4, and thus the defects caused by the grain boundaries are reduced.

In the present embodiment, the continuous heat treatment is performed while moving relative to the heating unit 4, but not only the heating unit 4 but also various materials may be used depending on the purpose. Further, the shape of the heating unit 4 is not limited to a line shape.

Further, a micro-zone heating is performed on the metal-based substrate 240e which has been covered with a high-quality carbon film or an inorganic material film by using a high-temperature tungsten wire, and the carbon atom bond between the high-quality carbon film or the inorganic material film is further optimized. Defects caused by incomplete junctions, this step enables high-quality carbon film or inorganic material film coverage and repair defects to improve the quality and increase the grain size of high-quality carbon film or inorganic material film, and heat up by local heating. The problem of uniformity and coverage that is difficult to control. In the synthesis process of a high-quality carbon film or an inorganic material film, the metal substrate 240e is a catalyst, and local heating can also dissolve an appropriate amount of carbon in the catalyst, and the amount of carbon dissolved in the catalyst can be locally heated. Temperature and time to control, increase the amount of carbon dissolved can increase the thickness of high-quality carbon film or inorganic material film to obtain high quality. In addition, the heating unit designed in this system can assist in the production of a uniform heating section with a temperature range of 500~900 °C.

In addition, the apparatus for continuously synthesizing a film according to the above embodiment can be combined with a highly uniform surface-shaped plasma and a special filter to solve the problem of ion bombardment and high-quality carbon film or inorganic material film in the past. The destruction and damage of high-quality carbon film or inorganic material film by ultraviolet photon (UV photon) causes a large number of defect structures, resulting in a problem of poor conductivity of high-quality carbon film or inorganic material film.

In addition, the apparatus for continuously synthesizing a high-quality carbon film or an inorganic material film according to an embodiment of the present invention may further include a transfer device for transferring a high-quality carbon film or an inorganic material film.

200‧‧‧Continuous equipment for the synthesis of high quality carbon or inorganic film

210‧‧‧Processing cavity

210a‧‧‧Intake gate

210b‧‧‧Exhaust gate

220‧‧‧ Plasma generation unit

230‧‧‧Filter

235‧‧‧ Plasma

240‧‧‧Substrate transfer device

240a‧‧‧Extracting components

240b‧‧‧ involved components

240c‧‧‧Rotating drum

240d‧‧‧Cooling wheel

240e‧‧‧Metal substrate

260‧‧‧vacuum system

340‧‧‧temperature control device

340a‧‧‧heating tube

270‧‧‧ arrow

280‧‧‧ arrow

4‧‧‧heating unit

450‧‧‧Cooling wheel

Claims (18)

An apparatus for continuously synthesizing a high-quality carbon film or an inorganic material film, comprising: an outer cavity including an air intake gate and an air outlet gate; and a substrate transfer device disposed in the outer cavity, wherein the base The material conveying device comprises a take-up member, a plurality of rotating rollers and a take-up member, the substrate conveying device has a moving path; a metal substrate is conveyed along the moving path; a temperature control device corresponds to Disposed above or below the substrate conveying device, when the metal substrate passes, the metal substrate is heated; a vacuum system is connected to the outer cavity to pass a gas from the The gas gate is drawn in and discharged from the exhaust gate; a gas source controller is coupled to the outer chamber to control supply of a process gas, wherein the process gas has a carbon source or a source of inorganic material; and a heating unit The surface of the substrate adjacent to the metal is disposed to have a relative movement with the substrate having the metal. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 1, wherein the metal substrate comprises any one of copper, iron, cobalt, nickel, gold, silver, platinum, rhodium or a mixture thereof. Composition. The apparatus for continuously synthesizing a high-quality carbon film or an inorganic material film according to claim 2, wherein the outer cavity body houses at least one pre-processing cavity and one process cavity, and a first buffer zone is located in the pre-processing cavity Between the process chamber and the process chamber. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 3, further comprising a cooling chamber, wherein the pretreatment chamber, the processing chamber and the cooling chamber are sequentially along the same The moving path of the metal substrate is disposed, and a second buffer zone is located between the process cavity and the cooling cavity. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 3, further comprising a cooling roller, wherein the pretreatment chamber, the processing chamber and the cooling roller are sequentially along the metal A moving path of the substrate is provided for cooling the metal-based substrate forming the high-quality carbon film or the inorganic material film. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 4, wherein the heating unit is disposed in front of or behind the cooling cavity. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 5, wherein the heating unit is disposed in front of or behind the cooling roller. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 7, wherein the cooling roller may be water-cooled or air-cooled. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 4, wherein the gas flow rate in the first buffer zone and the second buffer zone is about 0.05 L/min to 1000 L/min. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 8 or 9, wherein the pretreatment chamber has a first plasma generating unit and a first filter, and the processing chamber has a body a second plasma generating unit and a second filter. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 10, wherein the first plasma generating unit and the second plasma generating unit are one-side plasma sources. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 11, wherein the heating unit is a high temperature tungsten wire. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film as described in claim 12, further comprising a transfer device for removing the metal substrate. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 13, wherein the metal substrate is a ruthenium oxide substrate, a quartz substrate, a sapphire substrate, a boron nitride substrate, a glass substrate, a metal substrate, A semiconductor substrate or a combination thereof. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 1, wherein the carbon source or the inorganic material source may be a gas phase carbon-based precursor, a liquid phase carbon-based precursor, or a solid phase carbon-based precursor Any one of them is cleaved. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 15, wherein the carbon-based precursor is methane, ethylene, acetylene, ethanol, benzene, methanol, carbon-based polymer, nano carbon material. Any of or a mixture thereof. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 15, wherein the carbon source or inorganic material source is any one of nitrogen, boron or a mixture thereof. The apparatus for continuously synthesizing a high quality carbon film or an inorganic material film according to claim 15, wherein the inorganic material source is boron nitride, molybdenum disulfide, zinc sulfide, zinc telluride, zinc selenide, and selenide. Any of hydrazine, hydrazine hydrazine or a mixture thereof.