TWI533285B - Control circuit of display device and signal transformation circuit - Google Patents

Control circuit of display device and signal transformation circuit Download PDF

Info

Publication number
TWI533285B
TWI533285B TW102143497A TW102143497A TWI533285B TW I533285 B TWI533285 B TW I533285B TW 102143497 A TW102143497 A TW 102143497A TW 102143497 A TW102143497 A TW 102143497A TW I533285 B TWI533285 B TW I533285B
Authority
TW
Taiwan
Prior art keywords
coupled
circuit
inverter
pin
resistor
Prior art date
Application number
TW102143497A
Other languages
Chinese (zh)
Other versions
TW201521006A (en
Inventor
蔡孟哲
Original Assignee
晨星半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晨星半導體股份有限公司 filed Critical 晨星半導體股份有限公司
Priority to TW102143497A priority Critical patent/TWI533285B/en
Publication of TW201521006A publication Critical patent/TW201521006A/en
Application granted granted Critical
Publication of TWI533285B publication Critical patent/TWI533285B/en

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)

Description

顯示裝置之控制電路及訊號轉換電路 Display device control circuit and signal conversion circuit

本發明是關於顯示裝置之控制電路及訊號轉換電路,尤其是關於具有射頻干擾防護之顯示裝置之控制電路及訊號轉換電路。 The present invention relates to a control circuit and a signal conversion circuit of a display device, and more particularly to a control circuit and a signal conversion circuit for a display device having radio frequency interference protection.

現今每個人在日常生活中有很大的機會接觸各式各樣的電子裝置,例如電視、電腦、螢幕、手機、平板電腦等,如果電子裝置之間會互相造成干擾,將帶給使用者很大的不便及不佳的使用者經驗,例如手機在收到來電時,鄰近的電視或螢幕可能會受到射頻訊號的干擾而產生雜訊、畫面失真、無畫面或甚至造成重開機的情況。因此電子裝置必須做好各項防護措施,以避免受到來自其他裝置的干擾,其中又以手機所產生的干擾最為普遍,因為當手機接收來電時,其天線部位因為射頻訊號而產生很大的能量,影響其他電子裝置的電子元件的正常運作,加上手機移動性高,因此對其他電子裝置的威脅性也提高,所以在設計電子裝置的電子電路時有必要對來自手機的射頻干擾(radio frequency interference,RFI)加以防護。 Everyone in today's daily life has a great opportunity to access a wide range of electronic devices, such as televisions, computers, screens, mobile phones, tablets, etc. If the electronic devices interfere with each other, they will be brought to the user. Big inconvenience and poor user experience, such as when a mobile phone receives an incoming call, the neighboring TV or screen may be affected by the RF signal, causing noise, picture distortion, no picture or even restarting. Therefore, the electronic device must take various protective measures to avoid interference from other devices, and the interference generated by the mobile phone is most common, because when the mobile phone receives an incoming call, the antenna portion generates a large amount of energy due to the RF signal. The normal operation of electronic components that affect other electronic devices, coupled with the high mobility of mobile phones, has increased the threat to other electronic devices. Therefore, it is necessary to radiate radio frequency from mobile phones when designing electronic circuits of electronic devices. Interference, RFI) to protect.

鑑於先前技術之不足,本發明之一目的在於提供一種具有射頻干擾防護之顯示裝置之控制電路及訊號轉換電路,以阻隔來自手機 等通訊設備的射頻干擾。 In view of the deficiencies of the prior art, an object of the present invention is to provide a control circuit and a signal conversion circuit for a display device with radio frequency interference protection to block a mobile phone Radio frequency interference of communication equipment.

本發明揭露了一種顯示裝置之控制電路,包含:一影像處理晶片,包含一第一接腳及一第二接腳;一電阻,其一端點耦接該第一接腳;以及一振盪電路,具有一第一端點及一第二端點,該第一端點耦接該電阻之另一端點,該第二端點耦接該第二接腳,該振盪電路由該第一端點輸出一振盪訊號至該影像處理晶片;其中,該電阻與該第一接腳之一寄生電容形成一低通濾波器,以濾除一高頻雜訊。 The invention discloses a control circuit for a display device, comprising: an image processing chip, comprising a first pin and a second pin; a resistor, an end of which is coupled to the first pin; and an oscillating circuit, Having a first end point and a second end point, the first end point is coupled to the other end of the resistor, the second end point is coupled to the second pin, and the oscillating circuit is output by the first end point An oscillating signal is applied to the image processing chip; wherein the resistor forms a low pass filter with one of the parasitic capacitances of the first pin to filter out a high frequency noise.

本發明另揭露了一種訊號轉換電路,位於一晶片之內部,用以將一振盪訊號轉換為一時脈訊號,該晶片包含一第一接腳及一第二接腳,用以連接晶片外部之一振盪電路,以接收一振盪訊號,該訊號轉換電路包含:一反相器,其一輸入端耦接該第一接腳,其一輸出端耦接該第二接腳;一電阻,其一端點耦接該反相器之該輸入端,另一端點耦接該反相器之該輸出端;一施密特觸發電路,其一輸入端耦接該反相器之該輸入端與該反相器之該輸出端之其中之一,以接收該振盪訊號,並於其一輸出端輸出該時脈訊號;以及一低通濾波電路,耦接於該反相器與該施密特觸發電路之間,用以濾除自該第一接腳輸入之一高頻雜訊。 The invention further discloses a signal conversion circuit, which is located inside a chip for converting an oscillation signal into a clock signal. The chip comprises a first pin and a second pin for connecting one of the outside of the chip. An oscillating circuit for receiving an oscillating signal, the signal converting circuit comprising: an inverter having an input coupled to the first pin and an output coupled to the second pin; a resistor, an end thereof The other end of the inverter is coupled to the output of the inverter; the other end is coupled to the output of the inverter; a Schmitt trigger circuit having an input coupled to the input of the inverter and the inverting One of the output terminals of the device receives the oscillation signal and outputs the clock signal at an output thereof; and a low pass filter circuit coupled between the inverter and the Schmitt trigger circuit For filtering high frequency noise from one of the first pin inputs.

本發明另揭露了一種訊號轉換電路,位於一晶片之內部,用以將一振盪訊號轉換為一時脈訊號,該晶片包含一第一接腳及一第二接腳,用以連接晶片外部之一振盪電路,以接收一振盪訊號,該訊號轉換電路包含:一低通濾波電路,具有一輸入端及一輸出端,其輸入端耦接該第一接腳,用以濾除自該第一接腳輸入之一高頻雜訊;一反相器,其一輸入端耦接該低通濾波電路之該輸出端,其一輸出端耦接該第二接腳;一 電阻,其一端點耦接該反相器之該輸入端,另一端點耦接該反相器之該輸出端;以及一施密特觸發電路,其一輸入端耦接該反相器之該輸入端與該反相器之該輸出端之其中之一,以接收該振盪訊號,其一輸出端輸出該時脈。 The invention further discloses a signal conversion circuit, which is located inside a chip for converting an oscillation signal into a clock signal. The chip comprises a first pin and a second pin for connecting one of the outside of the chip. An oscillating circuit for receiving an oscillating signal, the signal converting circuit comprising: a low-pass filter circuit having an input end and an output end, wherein the input end is coupled to the first pin for filtering out the first connection a high frequency noise input; an inverter having an input coupled to the output of the low pass filter circuit, and an output coupled to the second pin; a resistor, one end of which is coupled to the input end of the inverter, and the other end of which is coupled to the output end of the inverter; and a Schmitt trigger circuit having an input coupled to the inverter One of the input end and the output end of the inverter to receive the oscillation signal, and an output terminal outputs the clock.

本發明之具有射頻干擾防護之顯示裝置之控制電路及訊號轉換電路具有防止高頻訊號干擾的防護電路,可以防止來自手機等通訊設備所產生的射頻干擾,尤其可以避免顯示裝置因手機的射頻干擾而產生的畫面失真、無畫面或重開機等情況。 The control circuit and the signal conversion circuit of the display device with radio frequency interference protection of the invention have a protection circuit for preventing high-frequency signal interference, can prevent radio frequency interference generated by a communication device such as a mobile phone, and particularly can avoid radio frequency interference of the display device due to the mobile phone. The resulting picture is distorted, no picture or reboot.

有關本發明的特徵、實作與功效,茲配合圖式作較佳實施例詳細說明如下。 The features, implementations, and utilities of the present invention are described in detail with reference to the preferred embodiments.

100‧‧‧電路板 100‧‧‧ boards

110、310、410、510、610、710、810、910、1010‧‧‧晶片 110, 310, 410, 510, 610, 710, 810, 910, 1010‧‧‧ wafer

111、112、114、120、512‧‧‧電阻 111, 112, 114, 120, 512‧‧‧ resistance

113‧‧‧反相器 113‧‧‧Inverter

115、150、160、514、912‧‧‧電容 115, 150, 160, 514, 912 ‧ ‧ capacitors

116‧‧‧放大器 116‧‧‧Amplifier

117‧‧‧施密特觸發電路 117‧‧‧ Schmitt trigger circuit

118‧‧‧處理電路 118‧‧‧Processing Circuit

119a‧‧‧振盪訊號輸入接腳 119a‧‧‧Oscillation signal input pin

119b‧‧‧振盪訊號輸出接腳 119b‧‧‧Oscillation signal output pin

130‧‧‧晶體振盪器 130‧‧‧ crystal oscillator

140‧‧‧節點 140‧‧‧ nodes

170‧‧‧寄生電容 170‧‧‧Parasitic capacitance

190‧‧‧振盪電路 190‧‧‧Oscillation circuit

〔圖1〕為本發明之具有高頻訊號干擾防護之時脈產生電路之一實施例的電路圖;〔圖2〕為反相器所輸出的週期性訊號的振幅與電阻120的電阻值之關係圖;〔圖3〕為本發明之具有高頻訊號干擾防護之時脈產生電路之另一實施例的電路圖;〔圖4〕為本發明之具有高頻訊號干擾防護之時脈產生電路之另一實施例的電路圖;〔圖5〕為本發明之具有高頻訊號干擾防護之時脈產生電路之另一實施例的電路圖; 〔圖6〕為本發明之具有高頻訊號干擾防護之時脈產生電路之另一實施例的電路圖;〔圖7〕為本發明之具有高頻訊號干擾防護之時脈產生電路之另一實施例的電路圖;〔圖8〕為本發明之具有高頻訊號干擾防護之時脈產生電路之另一實施例的電路圖;〔圖9〕為本發明之具有高頻訊號干擾防護之時脈產生電路之另一實施例的電路圖;以及〔圖10〕為本發明之具有高頻訊號干擾防護之時脈產生電路之另一實施例的電路圖。 1 is a circuit diagram of an embodiment of a clock generation circuit with high frequency signal interference protection according to the present invention; [FIG. 2] is a relationship between an amplitude of a periodic signal output by an inverter and a resistance value of the resistor 120. FIG. 3 is a circuit diagram of another embodiment of a clock generation circuit with high frequency signal interference protection according to the present invention; FIG. 4 is another embodiment of a clock generation circuit with high frequency signal interference protection according to the present invention; A circuit diagram of an embodiment; [Fig. 5] is a circuit diagram of another embodiment of a clock generation circuit with high frequency signal interference protection according to the present invention; FIG. 6 is a circuit diagram of another embodiment of a clock generation circuit with high frequency signal interference protection according to the present invention; FIG. 7 is another embodiment of a clock generation circuit with high frequency signal interference protection according to the present invention; The circuit diagram of the example; [Fig. 8] is a circuit diagram of another embodiment of the clock generation circuit with high frequency signal interference protection according to the present invention; [Fig. 9] is a clock generation circuit with high frequency signal interference protection according to the present invention. A circuit diagram of another embodiment; and [Fig. 10] is a circuit diagram of another embodiment of a clock generation circuit with high frequency signal interference protection of the present invention.

以下說明內容之技術用語係參照本技術領域之習慣用語,如本說明書對部分用語有加以說明或定義,該部分用語之解釋係以本說明書之說明或定義為準。 The technical terms of the following descriptions refer to the idioms in the technical field, and some of the terms are explained or defined in the specification, and the explanation of the terms is based on the description or definition of the specification.

本發明之揭露內容包含具有射頻干擾防護之顯示裝置之控制電路及訊號轉換電路,能夠防止射頻訊號的干擾。在實施為可能的前提下,本技術領域具有通常知識者能夠依本說明書之揭露內容來選擇等效之元件或步驟來實現本發明,亦即本發明之實施並不限於後敘之實施例。由於本發明之顯示裝置之控制電路及訊號轉換電路所包含之部分元件單獨而言可能為已知元件,因此在不影響該裝置發明之充分揭露及可實施性的前提下,以下說明對於已知元件的細節將予以節略。 The disclosure of the present invention includes a control circuit and a signal conversion circuit of a display device with radio frequency interference protection, which can prevent interference of radio frequency signals. The implementation of the present invention is not limited to the embodiments described below, and the embodiments of the present invention are not limited to the embodiments described below. Since some of the components included in the control circuit and the signal conversion circuit of the display device of the present invention may be known components alone, the following description is known without affecting the full disclosure and feasibility of the device invention. The details of the components will be abbreviated.

請參閱圖1,其係本發明之具有高頻訊號干擾防護之時 脈產生電路之一實施例的電路圖。晶片110、電阻120、晶體振盪器130、電容150及160皆設置於電路板100上。晶片110可以是具有特定功能的晶片,例如具有影像縮放(scaling)功能的影像處理晶片。如果晶片110於工作時需要參考一個穩定的週期性訊號,則需要提供接墊(pad)或是接腳(pin)來讓外部的參考訊號輸入,例如晶片110即提供振盪訊號輸入接腳119a及振盪訊號輸出接腳119b以供外部的振盪訊號輸入及輸出。晶片110外部的晶體振盪器130與電容150及160形成振盪電路190,可以提供晶片110所需的週期性的振盪訊號。晶體振盪器130一端耦接振盪訊號輸入接腳119a,另一端耦接振盪訊號輸出接腳119b;同時,晶體振盪器130的一端透過電容150耦接至地或是一個參考電壓準位,另一端透過電容160耦接至地或是同一參考電壓準位。 Please refer to FIG. 1 , which is a high frequency signal interference protection of the present invention. A circuit diagram of one embodiment of a pulse generating circuit. The wafer 110, the resistor 120, the crystal oscillator 130, and the capacitors 150 and 160 are all disposed on the circuit board 100. The wafer 110 may be a wafer having a specific function, such as an image processing wafer having an image scaling function. If the wafer 110 needs to refer to a stable periodic signal during operation, it is necessary to provide a pad or a pin to input an external reference signal. For example, the chip 110 provides the oscillation signal input pin 119a and The oscillation signal output pin 119b is used for external oscillation signal input and output. The crystal oscillator 130 external to the wafer 110 and the capacitors 150 and 160 form an oscillating circuit 190 that provides the periodic oscillating signals required by the wafer 110. One end of the crystal oscillator 130 is coupled to the oscillation signal input pin 119a, and the other end is coupled to the oscillation signal output pin 119b. Meanwhile, one end of the crystal oscillator 130 is coupled to the ground or a reference voltage level through the capacitor 150, and the other end The capacitor 160 is coupled to ground or the same reference voltage level.

晶片110的內部包含電阻111及112、反相器113、電阻114、電容115、放大器116、施密特觸發電路(schmitt-trigger)117以及處理電路118。電阻111及112為靜電放電(Eletrostatic Discharge,ESD)防護電阻。反相器113係用以緩衝功用,其輸入端耦接振盪訊號輸入接腳119a,輸出端耦接振盪訊號輸出接腳119b。電阻114為反相器113的回饋電阻,其兩端分別耦接反相器113的輸入端與輸出端。因為晶體振盪器130的作用,在反相器113的輸出端會產生類似弦波的週期性訊號,週期性訊號經過施密特觸發電路117的作用後,形成處理電路118所需的時脈CLK。假設晶片110是影像處理晶片,則處理電路118便依據時脈CLK處理影像訊號,影像訊號可由晶片110的其他接墊或接腳(未繪示)輸入。 The inside of the wafer 110 includes resistors 111 and 112, an inverter 113, a resistor 114, a capacitor 115, an amplifier 116, a Schmitt-trigger 117, and a processing circuit 118. The resistors 111 and 112 are Eletrostatic Discharge (ESD) protection resistors. The inverter 113 is used for buffering, and the input end is coupled to the oscillation signal input pin 119a, and the output end is coupled to the oscillation signal output pin 119b. The resistor 114 is a feedback resistor of the inverter 113, and two ends of the resistor 114 are respectively coupled to the input end and the output end of the inverter 113. Because of the action of the crystal oscillator 130, a periodic signal similar to a sine wave is generated at the output of the inverter 113. After the periodic signal passes through the Schmitt trigger circuit 117, the clock CLK required by the processing circuit 118 is formed. . Assuming that the wafer 110 is an image processing chip, the processing circuit 118 processes the image signal according to the clock CLK, and the image signal can be input by other pads or pins (not shown) of the wafer 110.

在實際操作時,當圖1所示的電路板100與通訊設備, 例如手機,太過接近時,手機的高頻訊號可能透過節點140竄入晶片110中,造成晶片無法正常工作。因此在晶體振盪器130與振盪訊號輸入接腳119a之間串接電阻120,電阻120與振盪訊號輸入接腳119a之寄生電容170形成一個低通濾波電路(low-pass filter),也就是說手機所產生的高頻訊號會被此低通濾波電路濾除,而不會影響晶片110的正常工作。由於輸入接腳119a係由金屬材質構成,其內部存在寄生電容170,圖1中將寄生電容170繪示於輸入接腳119a之外部僅是方便說明,並不代表寄生電容170是位於輸入接腳119a外部的一個獨立元件。在一個較佳的實施例中,寄生電容170所測得的電容值大約為2pF,低通濾波電路的截止頻率(cut-off frequency),為了濾除手機900MHz以上的高頻訊號,電阻120的電阻值應大於177Ω。雖然理論上電阻120的電阻值愈大愈好,但實際上電阻120的電阻值太大將產生一些副作用,例如晶體振盪器130的頻率偏移、負阻減小以及反相器113輸出端的週期性訊號的振幅減小而造成施密特觸發電路117的轉態錯誤等。晶片110對頻率偏移、負阻的大小以及施密特觸發電路117的輸入等皆有個別的設計需求,只要所加入的電阻120不會造成晶體振盪器130的頻率偏移過大、負阻的絕對值過小以及施密特觸發電路117的轉態錯誤等,便可以作為濾波電路的電阻,其中施密特觸發電路117的轉態錯誤是設計電阻120的關鍵。請參閱圖2,其係反相器113所輸出的週期性訊號的振幅與電阻120的電阻值之關係圖。當電阻120的電阻值愈來愈大時,反相器113所輸出的週期性訊號的振幅會愈來愈小。若週期性訊號的振幅太小,將造成施密特觸發電路117的轉態錯誤,進而無法輸出正確的時脈,因此電阻120的電阻值必須依據施密特觸 發電路117實際的設計做調整。在一個較佳的實施例中,週期性訊號的高準位峰值V ph 及低準位峰值V pl 與施密特觸發電路117的低輸入電壓閾值VIL及高輸入電壓閾值VIH的絕對差值必須大於0.6V,也就是說|V ph -VIH|>0.6以及|V pl -VIL|>0.6,而當電阻120的電阻值大於1000Ω時,施密特觸發電路117發生轉態錯誤的機率大幅提高。所以於此實施例中,在施密特觸發電路117的輸入限制下,電阻120的電阻值較佳為不超過1000Ω。當電阻值能滿足施密特觸發電路117的需求後,若上述的頻率偏移及負阻的大小亦能維持在設計需求所規定的範圍內,則此電阻值可以被用來作為電阻120的電阻值。當電阻值等於1000Ω,低通濾波電路的截止頻率約為160MHz,可以濾除來自手機的900MHz以上的高頻訊號。綜上所述,本發明之一較佳實施例中,電阻120的電阻值約介於200Ω至1000Ω之間。而電阻120可採用各類可作為電阻的元件,例如:由電晶體構成的電阻、或由高電阻係數的電阻絲所構成的電阻。上述的負阻量測方式,是將晶體振盪器130串聯一個可變電阻Vr,並且從晶片110的通用輸入/輸出接腳(General Purpose Input Output,GPIO)量測時脈,先將可變電阻Vr的阻值加大到時脈不穩定,然後將可變電阻Vr的阻值減少到使時脈剛恢復穩定時的可變電阻Vr的阻值的負數即為負電阻的阻值。 In actual operation, when the circuit board 100 shown in FIG. 1 is too close to a communication device, such as a mobile phone, the high frequency signal of the mobile phone may be inserted into the chip 110 through the node 140, causing the chip to malfunction. Therefore, the resistor 120 is connected in series between the crystal oscillator 130 and the oscillation signal input pin 119a, and the resistor 120 forms a low-pass filter with the parasitic capacitor 170 of the oscillation signal input pin 119a, that is, the mobile phone. The generated high frequency signal is filtered by the low pass filter circuit without affecting the normal operation of the wafer 110. Since the input pin 119a is made of a metal material, the parasitic capacitor 170 is present inside. The parasitic capacitor 170 is shown outside the input pin 119a in FIG. 1 for convenience of description, and does not mean that the parasitic capacitor 170 is located at the input pin. A separate component external to 119a. In a preferred embodiment, the capacitance measured by the parasitic capacitance 170 is approximately 2 pF, and the cut-off frequency of the low pass filter circuit In order to filter out the high frequency signal of the mobile phone above 900MHz, the resistance value of the resistor 120 should be greater than 177Ω. Although in theory the larger the resistance value of the resistor 120 is, the fact that the resistance value of the resistor 120 is too large will cause some side effects such as the frequency shift of the crystal oscillator 130, the reduction of the negative resistance, and the period of the output of the inverter 113. The amplitude of the sexual signal is reduced to cause a shift error of the Schmitt trigger circuit 117 and the like. The wafer 110 has individual design requirements for the frequency offset, the magnitude of the negative resistance, and the input of the Schmitt trigger circuit 117, as long as the added resistor 120 does not cause the frequency shift of the crystal oscillator 130 to be excessively large and negatively resistive. The absolute value is too small and the transition state error of the Schmitt trigger circuit 117 can be used as the resistance of the filter circuit. The transition error of the Schmitt trigger circuit 117 is the key to designing the resistor 120. Please refer to FIG. 2 , which is a graph showing the relationship between the amplitude of the periodic signal output by the inverter 113 and the resistance of the resistor 120 . As the resistance of the resistor 120 increases, the amplitude of the periodic signal output by the inverter 113 becomes smaller and smaller. If the amplitude of the periodic signal is too small, the transition state of the Schmitt trigger circuit 117 will be incorrect, and the correct clock will not be output. Therefore, the resistance value of the resistor 120 must be adjusted according to the actual design of the Schmitt trigger circuit 117. In a preferred embodiment, the absolute difference between the high-level peak value V ph and the low-level peak value V pl of the periodic signal and the low input voltage threshold VIL and the high input voltage threshold VIH of the Schmitt trigger circuit 117 must be More than 0.6V, that is, | V ph - VIH | > 0.6 and | V pl - VIL | > 0.6, and when the resistance value of the resistor 120 is greater than 1000 Ω, the probability of a Schmitt trigger circuit 117 having a transition error is greatly improved. . Therefore, in this embodiment, under the input limitation of the Schmitt trigger circuit 117, the resistance value of the resistor 120 is preferably not more than 1000 Ω. When the resistance value can meet the requirements of the Schmitt trigger circuit 117, if the frequency offset and the negative resistance are maintained within the range specified by the design requirements, the resistance value can be used as the resistor 120. resistance. When the resistance value is equal to 1000Ω, the cutoff frequency of the low-pass filter circuit is about 160MHz, which can filter out high-frequency signals above 900MHz from the mobile phone. In summary, in a preferred embodiment of the invention, the resistance of the resistor 120 is between about 200 Ω and 1000 Ω. The resistor 120 can be made of various types of resistors, such as resistors made of transistors or resistors made of high resistance coefficient wires. In the above negative resistance measurement method, the crystal oscillator 130 is connected in series with a variable resistor Vr , and the clock is measured from the general purpose input/output pin (GPIO) of the wafer 110. The resistance of the resistor V r is increased until the clock is unstable, and then the resistance of the variable resistor V r is reduced to a negative value of the resistance of the variable resistor V r when the clock just returns to stability. value.

為了補償因為串接電阻120之後所造成的參考訊號的振幅減小,在晶片110內部提供放大器116來將參考訊號放大。請參閱圖3,在晶片310中,反相器113的輸出端透過電容115耦接放大器116,因此週期性訊號在輸入施密特觸發電路117之前可以被放大器116放大,降低施密特觸發電路117發生轉態錯誤的可能性。另一方面,若增加放大器 116的放大倍率,電阻120的電阻值也可以隨之提高,以進一步降低低通濾波電路的截止頻率f c ,但仍須確保晶體振盪器130的振盪訊號不會被濾除。請注意,由於反相器113的輸入端及輸出端的訊號僅為反相的關係,不影響施密特觸發電路117的運作,因此圖1中的施密特觸發電路117除了可以耦接反相器113的輸出端之外,亦可以耦接至反相器113的輸入端,如圖4的晶片410所示;同理,圖3中的施密特觸發電路117除了可以透過放大器116及電容115耦接反相器113的輸出端之外,亦可以耦接至反相器113的輸入端。 To compensate for the decrease in the amplitude of the reference signal caused by the series resistor 120, an amplifier 116 is provided inside the wafer 110 to amplify the reference signal. Referring to FIG. 3, in the wafer 310, the output of the inverter 113 is coupled to the amplifier 116 through the capacitor 115. Therefore, the periodic signal can be amplified by the amplifier 116 before inputting the Schmitt trigger circuit 117, and the Schmitt trigger circuit is lowered. 117 The possibility of a transition error. On the other hand, if the amplification factor of the amplifier 116 is increased, the resistance value of the resistor 120 can be increased to further reduce the cutoff frequency f c of the low-pass filter circuit, but it is still necessary to ensure that the oscillation signal of the crystal oscillator 130 is not Filter out. Please note that since the signals at the input and output of the inverter 113 are only in an inverted relationship and do not affect the operation of the Schmitt trigger circuit 117, the Schmitt trigger circuit 117 of FIG. 1 can be coupled with an inverted phase. In addition to the output of the device 113, it can also be coupled to the input terminal of the inverter 113, as shown by the wafer 410 of FIG. 4; similarly, the Schmitt trigger circuit 117 of FIG. 3 can pass through the amplifier 116 and the capacitor. The 115 is coupled to the input end of the inverter 113 and can also be coupled to the input end of the inverter 113.

晶片110、310及410為一種由積體電路所構成的晶片,在一實施例中,晶片110可為具有影像處理功能的積體電路,例如影像縮放(scaling)功能,而晶片110、電阻120、晶體振盪器130、電容150及160與承載上述電子元件的電路板100共同構成顯示裝置的控制電路,顯示裝置可以例如是監視器(monitor)或是電視裝置。應用此電路的顯示裝置便不會再受到高頻訊號干擾的威脅,使用者毋須擔心將手機置放於顯示裝置附近時造會成顯示裝置的畫面失真、無畫面或自動重開機。 The wafers 110, 310, and 410 are a wafer formed by an integrated circuit. In an embodiment, the wafer 110 can be an integrated circuit having an image processing function, such as an image scaling function, and the wafer 110 and the resistor 120. The crystal oscillator 130 and the capacitors 150 and 160 together with the circuit board 100 carrying the electronic components constitute a control circuit of the display device. The display device may be, for example, a monitor or a television device. The display device using this circuit will no longer be threatened by high-frequency signal interference, and the user does not have to worry about the distortion of the display device, no picture or automatic restart when the mobile phone is placed near the display device.

在本發明的另一個實施例中,高頻訊號干擾防護電路設計於晶片中。請參閱圖5,其係本發明之具有高頻訊號干擾防護之時脈產生電路之另一實施例的電路圖。晶片510包含靜電放電防護電阻111及112、振盪訊號輸入接腳119a、振盪訊號輸出接腳119b、反相器113、電阻114及512、電容514、施密特觸發電路117以及處理電路118。振盪訊號輸入接腳119a及振盪訊號輸出接腳119b連接晶片510外部的振盪電路190,以接收振盪訊號,其中反相器113、電阻114及512、電容514以及 施密特觸發電路117的主要功能在於將振盪電路190所產生的振盪訊號轉換為時脈訊號CLK。本在實施例中,電阻512及電容514形成低通濾波電路,目的在於濾除從晶片510外部經由振盪訊號輸入接腳119a竄入晶片510的高頻訊號。電阻512的一端耦接反相器113的輸出端,另一端為低通濾波電路的輸出端,耦接施密特觸發電路117的輸入端;電容514的一端耦接施密特觸發電路117的輸入端,也就是低通濾波電路的輸出端,另一端耦接至參考電壓準位,通常為接地。在選擇電阻512的電阻值及電容514的電容值時,目標在於使截止頻率小於高頻訊號的頻率,例如高頻訊號的頻率為900MHz以上,電容514的電容值選擇2pF,則電阻512的電阻值應大於177Ω。 In another embodiment of the invention, the high frequency signal interference protection circuit is designed in the wafer. Please refer to FIG. 5, which is a circuit diagram of another embodiment of the clock generation circuit with high frequency signal interference protection of the present invention. The wafer 510 includes electrostatic discharge protection resistors 111 and 112, an oscillating signal input pin 119a, an oscillating signal output pin 119b, an inverter 113, resistors 114 and 512, a capacitor 514, a Schmitt trigger circuit 117, and a processing circuit 118. The oscillating signal input pin 119a and the oscillating signal output pin 119b are connected to the oscillating circuit 190 outside the chip 510 to receive the oscillating signal, wherein the inverter 113, the resistors 114 and 512, the capacitor 514, and The main function of the Schmitt trigger circuit 117 is to convert the oscillation signal generated by the oscillation circuit 190 into a clock signal CLK. In the embodiment, the resistor 512 and the capacitor 514 form a low-pass filter circuit for filtering high-frequency signals that are inserted into the wafer 510 from the outside of the wafer 510 via the oscillation signal input pin 119a. One end of the resistor 512 is coupled to the output end of the inverter 113, and the other end is an output end of the low-pass filter circuit coupled to the input end of the Schmitt trigger circuit 117; one end of the capacitor 514 is coupled to the Schmitt trigger circuit 117. The input, that is, the output of the low-pass filter circuit, and the other end are coupled to the reference voltage level, usually grounded. When the resistance value of the resistor 512 and the capacitance value of the capacitor 514 are selected, the target is to make the cutoff frequency smaller than the frequency of the high frequency signal, for example, the frequency of the high frequency signal is 900 MHz or more, and the capacitance value of the capacitor 514 is 2 pF, and the resistance of the resistor 512 The value should be greater than 177 Ω.

同樣的,在上述的實施例中,低通濾波電路可以耦接至反相器113的輸入端,即如圖6所示,此時晶片610中的電阻512的一端耦接反相器113的輸入端,其餘與圖5所示之實施例相同。上述兩實施例的電阻512可以利用多晶矽電阻(poly resistor)電阻來實作,電容514可以利用金屬氧化物半導體電容器(MOS Capacitor)來實作。此外,為了補償電阻512所造成的訊號振幅的降低,圖5或圖6的實施例中可以在低通濾波電路與施密特觸發電路117之間耦接放大器,圖5之實施例增加放大器後便如圖7之晶片710所示,圖6之實施例增加放大器後便如圖8之晶片810所示,如此一來可以減低施密特觸發電路117可能的轉態錯誤。 Similarly, in the above embodiment, the low-pass filter circuit can be coupled to the input end of the inverter 113, as shown in FIG. 6. At this time, one end of the resistor 512 in the chip 610 is coupled to the inverter 113. The input is the same as the embodiment shown in FIG. The resistors 512 of the above two embodiments can be implemented by using polysilicon resistors, and the capacitors 514 can be implemented by using a metal oxide semiconductor capacitor (MOS Capacitor). In addition, in order to compensate for the decrease in signal amplitude caused by the resistor 512, the amplifier can be coupled between the low-pass filter circuit and the Schmitt trigger circuit 117 in the embodiment of FIG. 5 or FIG. 6, and the embodiment of FIG. 5 adds the amplifier. As shown in the wafer 710 of FIG. 7, the embodiment of FIG. 6 adds the amplifier as shown by the wafer 810 of FIG. 8, thus reducing the possible transition errors of the Schmitt trigger circuit 117.

除了上述的實施例之外,本發明亦可以利用靜電放電防護電阻111來產生一個低通濾波電路。請參閱圖9,其係本發明之具有高頻訊號干擾防護之時脈產生電路之另一實施例的電路圖。晶片910包含靜 電放電防護電阻111及112、振盪訊號輸入接腳119a、振盪訊號輸出接腳119b、反相器113、電阻114、電容912、施密特觸發電路117以及處理電路118,其中反相器113、電阻114及111、電容912以及施密特觸發電路117的主要功能在於將晶體振盪器130所產生的振盪訊號轉換為時脈訊號CLK。振盪訊號輸入接腳119a及振盪訊號輸出接腳119b連接晶片910外部的振盪電路190,以接收振盪訊號。本在實施例中,電容912與靜電放電防護電阻111形成低通濾波電路,可以濾除由晶片910外部藉由振盪訊號輸入接腳119a竄入的高頻訊號。低通濾波電路的輸入端耦接振盪訊號輸入接腳119a,輸出端耦接反相器113的輸入端。靜電放電防護電阻111的一端耦接振盪訊號輸入接腳119a,另一端耦接低通濾波電路的輸出端;電容912的一端耦接低通濾波電路的輸出端,另一端耦接至參考電壓準位,通常為接地。 In addition to the above embodiments, the present invention can also utilize the electrostatic discharge protection resistor 111 to generate a low pass filter circuit. Please refer to FIG. 9, which is a circuit diagram of another embodiment of the clock generation circuit with high frequency signal interference protection of the present invention. Wafer 910 contains static The electric discharge protection resistors 111 and 112, the oscillation signal input pin 119a, the oscillation signal output pin 119b, the inverter 113, the resistor 114, the capacitor 912, the Schmitt trigger circuit 117, and the processing circuit 118, wherein the inverter 113, The main function of the resistors 114 and 111, the capacitor 912 and the Schmitt trigger circuit 117 is to convert the oscillation signal generated by the crystal oscillator 130 into the clock signal CLK. The oscillation signal input pin 119a and the oscillation signal output pin 119b are connected to the oscillation circuit 190 outside the chip 910 to receive the oscillation signal. In the embodiment, the capacitor 912 and the electrostatic discharge protection resistor 111 form a low-pass filter circuit, which can filter out the high-frequency signal that is inserted from the outside of the chip 910 by the oscillation signal input pin 119a. The input end of the low-pass filter circuit is coupled to the oscillation signal input pin 119a, and the output end is coupled to the input end of the inverter 113. One end of the ESD protection resistor 111 is coupled to the oscillation signal input pin 119a, and the other end is coupled to the output end of the low-pass filter circuit. One end of the capacitor 912 is coupled to the output end of the low-pass filter circuit, and the other end is coupled to the reference voltage Bit, usually grounded.

在圖9的實施例中,施密特觸發電路117的輸入端可以耦接至反相器113的輸入端,也就是低通濾波器的輸出端,即如圖10的晶片1010所示。圖9及圖10中晶片910及1010內部的電阻可以利用多晶矽電阻電阻來實作,電容912可以利用金屬氧化物半導體電容器來實作。 In the embodiment of FIG. 9, the input of the Schmitt trigger circuit 117 can be coupled to the input of the inverter 113, that is, the output of the low pass filter, as shown by the wafer 1010 of FIG. The internal resistance of the wafers 910 and 1010 in FIGS. 9 and 10 can be implemented using a polysilicon resistor, and the capacitor 912 can be implemented using a metal oxide semiconductor capacitor.

在圖5至圖10的實施例中,晶片內部內建高頻訊號的干擾防護電路,也就是利用低通濾波的原理來將高頻訊號濾除,以免影響時脈產生電路的運作,進而影響晶片的整體功能。相較於圖1、圖3及圖4之實施例,將高頻訊號的干擾防護電路設置於晶片中可以減少電路板上的元件使用量,以避免較多的元件及較長的繞線可能造成電路板上電磁干擾的機會增加。 In the embodiment of FIG. 5 to FIG. 10, the interference protection circuit with built-in high-frequency signal inside the chip, that is, the principle of low-pass filtering is used to filter the high-frequency signal, so as not to affect the operation of the clock generation circuit, thereby affecting The overall function of the chip. Compared with the embodiments of FIG. 1, FIG. 3 and FIG. 4, the interference protection circuit of the high frequency signal is disposed in the wafer, which can reduce the component usage on the circuit board, thereby avoiding more components and longer winding possibilities. The chance of electromagnetic interference on the board increases.

請注意,前揭圖示中,元件之形狀、尺寸以及比例等僅為示意,係供本技術領域具有通常知識者瞭解本發明之用,非用以限制本發明。另外,本技術領域人士可依本發明之揭露內容及自身的需求選擇性地實施任一實施例之部分或全部技術特徵,或者選擇性地實施複數個實施例之部分或全部技術特徵之組合,藉此增加本發明實施時的彈性。再者,前揭實施例雖以影像處理晶片為例,然此並非對本發明之限制,本技術領域人士可依本發明之揭露適當地將本發明應用於其它類型的晶片。 It is noted that the shapes, the dimensions, the proportions, and the like of the elements are merely illustrative, and are intended to be used by those of ordinary skill in the art to understand the invention and not to limit the invention. In addition, some or all of the technical features of any embodiment may be selectively implemented, or a combination of some or all of the technical features of the plurality of embodiments may be selectively implemented according to the disclosure of the present invention and the requirements thereof. Thereby, the elasticity at the time of implementation of the present invention is increased. Furthermore, the foregoing embodiments are exemplified by image processing wafers, and are not intended to limit the present invention, and those skilled in the art can appropriately apply the present invention to other types of wafers in accordance with the disclosure of the present invention.

雖然本發明之實施例如上所述,然而該些實施例並非用來限定本發明,本技術領域具有通常知識者可依據本發明之明示或隱含之內容對本發明之技術特徵施以變化,凡此種種變化均可能屬於本發明所尋求之專利保護範疇,換言之,本發明之專利保護範圍須視本說明書之申請專利範圍所界定者為準。 Although the embodiments of the present invention are described above, the embodiments are not intended to limit the present invention, and those skilled in the art can change the technical features of the present invention according to the explicit or implicit contents of the present invention. Such variations are all within the scope of patent protection sought by the present invention. In other words, the scope of patent protection of the present invention is defined by the scope of the patent application of the specification.

100‧‧‧電路板 100‧‧‧ boards

110‧‧‧晶片 110‧‧‧ wafer

111、112、114、120‧‧‧電阻 111, 112, 114, 120‧‧‧ resistance

113‧‧‧反相器 113‧‧‧Inverter

150、160‧‧‧電容 150, 160‧‧‧ capacitor

117‧‧‧施密特觸發電路 117‧‧‧ Schmitt trigger circuit

118‧‧‧處理電路 118‧‧‧Processing Circuit

119a‧‧‧振盪訊號輸入接腳 119a‧‧‧Oscillation signal input pin

119b‧‧‧振盪訊號輸出接腳 119b‧‧‧Oscillation signal output pin

130‧‧‧晶體振盪器 130‧‧‧ crystal oscillator

140‧‧‧節點 140‧‧‧ nodes

170‧‧‧寄生電容 170‧‧‧Parasitic capacitance

190‧‧‧振盪電路 190‧‧‧Oscillation circuit

Claims (12)

一種顯示裝置之控制電路,包含:一影像處理晶片,包含一第一接腳及一第二接腳,該影像處理晶片更包含:一反相器,其一輸入端耦接該第一接腳,其一輸出端耦接該第二接腳;一另一電阻,其一端耦接該反相器之該輸入端,另一端耦接該反相器之該輸出端;以及一施密特觸發電路,其一輸入端耦接該反相器之該輸入端與該反相器之該輸出端之其中之一,其一輸出端輸出一時脈訊號;一電阻,其一端點耦接該第一接腳;以及一振盪電路,具有一第一端點及一第二端點,該第一端點耦接該電阻之另一端點,該第二端點耦接該第二接腳,該振盪電路由該第一端點輸出一振盪訊號至該影像處理晶片;其中,該電阻與該第一接腳之一寄生電容形成一低通濾波器,以濾除一高頻雜訊。 A control device for a display device includes: an image processing chip, comprising a first pin and a second pin, the image processing chip further comprising: an inverter, an input end coupled to the first pin An output terminal is coupled to the second pin; a further resistor having one end coupled to the input end of the inverter and the other end coupled to the output end of the inverter; and a Schmitt trigger The circuit has an input coupled to one of the input end of the inverter and the output end of the inverter, wherein an output terminal outputs a clock signal; and a resistor coupled to the first end of the resistor And an oscillating circuit having a first end point and a second end point, wherein the first end point is coupled to the other end of the resistor, the second end point is coupled to the second pin, the oscillating The circuit outputs an oscillating signal to the image processing chip by the first terminal; wherein the resistor forms a low pass filter with one of the parasitic capacitances of the first pin to filter out a high frequency noise. 如申請專利範圍第1項所述之顯示裝置之控制電路,其中該影像處理晶片更包含:一第一靜電防護電阻,耦接於該反相器之該輸入端及該第一接腳之間;以及 一第二靜電防護電阻,耦接於該反相器之該輸出端及該第二接腳之間。 The control circuit of the display device of claim 1, wherein the image processing chip further comprises: a first static electricity protection resistor coupled between the input end of the inverter and the first pin ;as well as A second static electricity protection resistor is coupled between the output end of the inverter and the second pin. 如申請專利範圍第1項所述之顯示裝置之控制電路,其中該影像處理晶片更包含:一放大器,耦接於該施密特觸發電路與該反相器之間。 The control circuit of the display device of claim 1, wherein the image processing chip further comprises: an amplifier coupled between the Schmitt trigger circuit and the inverter. 如申請專利範圍第1項所述之顯示裝置之控制電路,其中該影像處理晶片為一影像縮放晶片。 The control circuit of the display device of claim 1, wherein the image processing chip is an image scaling chip. 如申請專利範圍第1項所述之顯示裝置之控制電路,其中該電阻之電阻值介於200歐姆與1000歐姆之間。 The control circuit of the display device according to claim 1, wherein the resistance of the resistor is between 200 ohms and 1000 ohms. 一種訊號轉換電路,位於一晶片之內部,用以將一振盪訊號轉換為一時脈訊號,該晶片包含一第一接腳及一第二接腳,用以連接晶片外部之一振盪電路,以接收一振盪訊號,該訊號轉換電路包含:一反相器,其一輸入端耦接該第一接腳,其一輸出端耦接該第二接腳;一電阻,其一端點耦接該反相器之該輸入端,另一端點耦接該反相器之該輸出端;一施密特觸發電路,其一輸入端耦接該反相器之該輸入端與該反相器之該輸出端之其中之一,以接收該振盪訊號,並於其一輸出端輸出該時脈訊號;以及一低通濾波電路,耦接於該反相器與該施密特觸發電路之間,用以濾除自該第一接腳輸入之一高頻雜訊。 A signal conversion circuit is disposed inside a chip for converting an oscillation signal into a clock signal. The chip includes a first pin and a second pin for connecting an oscillating circuit outside the chip to receive An oscillating signal, the signal conversion circuit includes: an inverter having an input coupled to the first pin and an output coupled to the second pin; a resistor coupled to the end of the resistor The input end of the device is coupled to the output end of the inverter; a Schmitt trigger circuit having an input coupled to the input end of the inverter and the output end of the inverter One of the signals to receive the oscillation signal and output the clock signal at an output thereof; and a low-pass filter circuit coupled between the inverter and the Schmitt trigger circuit for filtering One of the high frequency noise is input from the first pin. 如申請專利範圍第6項所述之訊號轉換電路,更包含:一第一靜電防護電阻,耦接於該反相器之該輸入端及該第一接腳之間;以及 一第二靜電防護電阻,耦接於該反相器之該輸出端及該第二接腳之間。 The signal conversion circuit of claim 6, further comprising: a first static electricity protection resistor coupled between the input end of the inverter and the first pin; A second static electricity protection resistor is coupled between the output end of the inverter and the second pin. 如申請專利範圍第6項所述之訊號轉換電路,其中該低通濾波電路包含:一另一電阻,其一端耦接該反相器之該輸入端與該反相器之該輸出端之其中之一,另一端耦接該低通濾波電路之一輸出端;以及一電容,其一端耦接該低通濾波電路之該輸出端,另一端耦接一參考電壓準位。 The signal conversion circuit of claim 6, wherein the low-pass filter circuit comprises: another resistor, one end of which is coupled to the input end of the inverter and the output end of the inverter And the other end is coupled to the output end of the low-pass filter circuit; and a capacitor coupled to the output end of the low-pass filter circuit and coupled to a reference voltage level at the other end. 如申請專利範圍第8項所述之訊號轉換電路,更包含:一放大器,耦接於該低通濾波器之該輸出端與該施密特觸發電路之該輸入端之間。 The signal conversion circuit of claim 8, further comprising: an amplifier coupled between the output of the low pass filter and the input of the Schmitt trigger circuit. 一種訊號轉換電路,位於一晶片之內部,用以將一振盪訊號轉換為一時脈訊號,該晶片包含一第一接腳及一第二接腳,用以連接晶片外部之一振盪電路,以接收一振盪訊號,該訊號轉換電路包含:一低通濾波電路,具有一輸入端及一輸出端,其輸入端耦接該第一接腳,用以濾除自該第一接腳輸入之一高頻雜訊;一反相器,其一輸入端耦接該低通濾波電路之該輸出端,其一輸出端耦接該第二接腳;一電阻,其一端點耦接該反相器之該輸入端,另一端點耦接該反相器之該輸出端;以及一施密特觸發電路,其一輸入端耦接該反相器之該輸入端與該反相器之該輸出端之其中之一,以接收該振盪訊號,其一輸出端輸出該時脈。 A signal conversion circuit is disposed inside a chip for converting an oscillation signal into a clock signal. The chip includes a first pin and a second pin for connecting an oscillating circuit outside the chip to receive An oscillating signal, the signal conversion circuit includes: a low-pass filter circuit having an input end and an output end, the input end of which is coupled to the first pin for filtering one of the inputs from the first pin An inverter having an input coupled to the output of the low-pass filter circuit, an output coupled to the second pin, and a resistor coupled to the inverter The input end is coupled to the output end of the inverter; and a Schmitt trigger circuit having an input coupled to the input end of the inverter and the output end of the inverter One of them receives the oscillation signal, and an output terminal outputs the clock. 如申請專利範圍第10項所述之訊號轉換電路,更包含:一靜電防護電阻,耦接於該反相器之該輸出端及該第二接腳之間。 The signal conversion circuit of claim 10, further comprising: an electrostatic protection resistor coupled between the output end of the inverter and the second pin. 如申請專利範圍第10項所述之訊號轉換電路,其中該低通濾波電路包含:一另一電阻,其一端耦接該第一接腳,另一端耦接該低通濾波電路之該輸出端;以及一電容,其一端耦接該低通濾波電路之該輸出端,另一端耦接一參考電壓準位;其中,該電阻係具有靜電防護的功用。 The signal conversion circuit of claim 10, wherein the low-pass filter circuit comprises: another resistor, one end of which is coupled to the first pin, and the other end of which is coupled to the output end of the low-pass filter circuit And a capacitor, one end of which is coupled to the output end of the low-pass filter circuit, and the other end is coupled to a reference voltage level; wherein the resistor has the function of electrostatic protection.
TW102143497A 2013-11-28 2013-11-28 Control circuit of display device and signal transformation circuit TWI533285B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW102143497A TWI533285B (en) 2013-11-28 2013-11-28 Control circuit of display device and signal transformation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW102143497A TWI533285B (en) 2013-11-28 2013-11-28 Control circuit of display device and signal transformation circuit

Publications (2)

Publication Number Publication Date
TW201521006A TW201521006A (en) 2015-06-01
TWI533285B true TWI533285B (en) 2016-05-11

Family

ID=53935098

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102143497A TWI533285B (en) 2013-11-28 2013-11-28 Control circuit of display device and signal transformation circuit

Country Status (1)

Country Link
TW (1) TWI533285B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI708239B (en) * 2018-05-22 2020-10-21 聯詠科技股份有限公司 Display apparatus and data driving integrated circuit thereof

Also Published As

Publication number Publication date
TW201521006A (en) 2015-06-01

Similar Documents

Publication Publication Date Title
US9246328B2 (en) Integrated EMI filter circuit with ESD protection and incorporating capacitors
JP5356418B2 (en) Differential transmission circuit and electronic device including the same
EP2907163B1 (en) Crystal oscillator with electrostatic discharge (esd) compliant drive level limiter
TWI504141B (en) Common mode termination with c-multiplier circuit
TWI474633B (en) Integrated passive device with electrostatic discharge protection mechanism
US9947478B2 (en) Variable capacitance device and communication apparatus
US11515302B2 (en) Circuit including configuration terminal and method
TWI533285B (en) Control circuit of display device and signal transformation circuit
US20190287960A1 (en) Semiconductor ESD Protection Device and Method
JP2007174054A (en) Field transmission system
US10516366B2 (en) Crystal oscillator interconnect architecture with noise immunity
JP4373332B2 (en) Oscillator and integrated circuit
JP2003179430A (en) Integrated circuit for oscillator
CN104681003A (en) Control circuit and signal conversion circuit of display device
US20060214740A1 (en) Blocking a leakage current
CN203616974U (en) Control circuit of display device and signal conversion circuit
CN107820160B (en) Signal input circuit
JP7330146B2 (en) switch circuit
TW201813294A (en) Circuitry with a noise attenuation circuit to reduce noise generated by an aggressor circuit
US8030904B2 (en) Oscillator circuit
JP5098742B2 (en) Constant voltage power circuit
TW201714404A (en) Semiconductor integrated circuit device and a method for setting an optimal resistance of a damper
US20150061753A1 (en) Signal output circuit and signal output method
KR20170106155A (en) Receiver for human body communication and method for removing noise thereof
JP4024213B2 (en) Impedance converter for condenser microphone

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees
MM4A Annulment or lapse of patent due to non-payment of fees