TWI532886B - A chemical copper plating solution for ag-catalysed copper deposition process and a method of using the chemical copper plating solution for ag-catalysed copper deposition process thereof - Google Patents

A chemical copper plating solution for ag-catalysed copper deposition process and a method of using the chemical copper plating solution for ag-catalysed copper deposition process thereof Download PDF

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TWI532886B
TWI532886B TW103140290A TW103140290A TWI532886B TW I532886 B TWI532886 B TW I532886B TW 103140290 A TW103140290 A TW 103140290A TW 103140290 A TW103140290 A TW 103140290A TW I532886 B TWI532886 B TW I532886B
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copper
copper plating
accelerator
reaction
silver catalyst
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TW103140290A
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TW201619444A (en
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李建良
劉家汝
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國立高雄應用科技大學
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用於銀觸媒鍍銅反應之化學鍍銅液及利用該用於銀觸媒鍍銅反應之化學 鍍銅液進行銀觸媒鍍銅之方法 Electroless copper plating solution for silver catalyst copper plating reaction and chemistry for using copper catalyst for copper catalyst reaction Method for copper plating of silver catalyst by copper plating solution

本發明係關於一種化學鍍銅液,特別是一種用於銀觸媒鍍銅反應之化學鍍銅液,本發明另包含一種利用該銀觸媒鍍銅反應之化學鍍銅液進行銀觸媒鍍銅之方法。 The invention relates to an electroless copper plating solution, in particular to an electroless copper plating solution for copper catalyst copper plating reaction, and the invention further comprises an electroless copper plating solution using the silver catalyst copper plating reaction for silver catalyst plating. The method of copper.

化學鍍銅反應由於操作簡單,現今被廣泛地運用於工業界。化學鍍銅反應係將一基材作為工作電極,置入一化學鍍銅液中,藉由通電使該化學鍍銅液中的銅離子沉積於該基材表面,以形成一銅鍍膜,該基材可以為印刷電路板或塑料,藉由化學鍍銅反應以獲得具有良好導電性之基材。在化學鍍銅反應中,經常藉由鈀觸媒以提升化學鍍銅反應之速率,當以鈀做為觸媒以進行化學鍍銅反應時,大多會在該化學鍍銅液中添加一加速劑或一安定劑,並有文獻報導以1,10-菲羅啉或聯吡啶等化合物作為該化學鍍銅液中的安定劑,以有效且精確地控制反應速率。然而,由於鈀為貴金屬,價格相當高昂,並且國際貴金屬價格常會隨著國際局勢而劇烈波動,致使利用鈀作為觸媒之化學鍍銅反應的製程成本隨之上下起伏,目前出現將銀做為觸媒以運用於化學鍍銅反應中,銀的價格相對鈀低廉許多,故使用銀觸媒進行化學鍍銅反應,已然成為工業界的一股新潮流。 The electroless copper plating reaction is widely used in the industry today due to its simple operation. The electroless copper plating reaction uses a substrate as a working electrode and is placed in an electroless copper plating solution, and copper ions in the electroless copper plating solution are deposited on the surface of the substrate by energization to form a copper plating film. The material can be a printed circuit board or plastic, and is electrolessly plated to obtain a substrate having good electrical conductivity. In the electroless copper plating reaction, the rate of the electroless copper plating reaction is often increased by a palladium catalyst. When palladium is used as a catalyst for the electroless copper plating reaction, an accelerator is often added to the electroless copper plating solution. Or a stabilizer, and a compound such as 1,10-phenanthroline or bipyridine is reported in the literature as a stabilizer in the electroless copper plating solution to effectively and accurately control the reaction rate. However, since palladium is a precious metal, the price is quite high, and the price of international precious metals often fluctuates with the international situation, causing the process cost of electroless copper plating using palladium as a catalyst to fluctuate. The medium is used in the electroless copper plating reaction. The price of silver is much lower than that of palladium. Therefore, the use of silver catalyst for electroless copper plating has become a new trend in the industry.

習用用於銀觸媒鍍銅反應之化學鍍銅液係包含硫酸銅、一還 原劑及一螯合劑,並將上述化合物溶於水中。惟,由於使用習用用於銀觸媒鍍銅反應之化學鍍銅液的銀觸媒鍍銅反應效率差,使得銅離子僅能以緩慢的速度沉積於基板上,不僅拉長了製作具有該銅鍍膜之基材的作業時間,另一方面亦容易發生短路的情況,使得在進行反應的過程中因短路而迫使反應中斷,造成形成之該銅鍍膜的產生厚度不均及品質不佳的瑕疵。 The electroless copper plating solution used for the silver catalyst copper plating reaction contains copper sulfate, one still The original agent and a chelating agent, and the above compound is dissolved in water. However, due to the poor reaction efficiency of the silver catalyst copper plating using the electroless copper plating solution for the silver catalyst copper plating reaction, the copper ions can be deposited on the substrate only at a slow rate, which is not only elongated to have the copper. The working time of the coated substrate is also prone to short-circuiting, which causes the reaction to be interrupted by the short circuit during the reaction, resulting in uneven thickness and poor quality of the formed copper plating film.

有鑑於此,有必要提供一種用於銀觸媒鍍銅反應之化學鍍銅液,以解決以銀觸媒鍍銅反應之反應效率低落及鍍膜品質不佳等問題。 In view of the above, it is necessary to provide an electroless copper plating solution for the copper catalyst copper plating reaction to solve the problems of low reaction efficiency and poor coating quality of the silver plating reaction by silver catalyst.

本發明係提供一種用於銀觸媒鍍銅反應之化學鍍銅液,係可以提高進行化學鍍銅反應之速率。 The present invention provides an electroless copper plating solution for a copper catalyst copper plating reaction, which can increase the rate of performing an electroless copper plating reaction.

本發明係提供一種用於銀觸媒鍍銅反應之化學鍍銅液,係可以避免短路的情況產生,以提升鍍膜品質。 The invention provides an electroless copper plating solution for copper catalyst copper plating reaction, which can avoid the occurrence of short circuit to improve the coating quality.

一種用於銀觸媒鍍銅反應之化學鍍銅液,係包含:一銅離子源,該銅離子源係用以提供銅離子;一還原劑,該還原劑係用以將銅離子還原成金屬銅;一螯合劑,該螯合劑係用以與銅離子進行螯合;一加速劑,該加速劑係為具有含氮雜環之化合物;及一溶劑,該溶劑係用以混合該銅離子源、該還原劑、該螯合劑及該加速劑,其中,該加速劑為1,10-菲羅啉、聯吡啶、2,9-亞甲基-1,10-菲羅啉、三吡啶或4-羥基吡啶,該銅離子源之濃度為0.01~0.2M、該還原劑之濃度為0.05~0.2M、該螯合劑的濃度為0.05~0.2M及該加速劑之濃度為1×10-6~1×10-5M,該銅離子源為硫酸銅、硝酸銅、氯化銅、碳酸銅、酒石酸銅、氫氧化銅或醋酸銅,該還原劑為甲醛、聚甲醛、次磷酸鈉、硼氫化鈉、硼氫化鉀、二甲基胺硼烷或葡萄糖,該螯合劑為乙二胺四乙酸、氨二乙酸、氨三乙酸、N-羥乙基乙二胺三乙酸、酒石酸鉀鈉、葡萄糖酸鈉、三乙醇胺、甘油、四羥丙基乙二氨、羥基-(1,1)-亞乙基二磷酸或氨基三亞甲基磷酸。 An electroless copper plating solution for silver catalyst copper plating reaction, comprising: a copper ion source for providing copper ions; and a reducing agent for reducing copper ions to metal Copper; a chelating agent for chelation with copper ions; an accelerator, the accelerator having a nitrogen-containing heterocyclic ring; and a solvent for mixing the copper ion source The reducing agent, the chelating agent and the accelerator, wherein the accelerator is 1,10-phenanthroline, bipyridine, 2,9-methylene-1,10-phenanthroline, tripyridine or 4 - Hydroxypyridine, the concentration of the copper ion source is 0.01 to 0.2 M, the concentration of the reducing agent is 0.05 to 0.2 M, the concentration of the chelating agent is 0.05 to 0.2 M, and the concentration of the accelerator is 1 × 10 -6 ~ 1×10 -5 M, the copper ion source is copper sulfate, copper nitrate, copper chloride, copper carbonate, copper tartrate, copper hydroxide or copper acetate, the reducing agent is formaldehyde, polyoxymethylene, sodium hypophosphite, hydroboration Sodium, potassium borohydride, dimethylamine borane or glucose, the chelating agent is ethylenediaminetetraacetic acid, ammonia diacetic acid, ammonia triacetic acid, N-hydroxyethyl B Amine triacetate, sodium potassium tartrate, sodium gluconate, triethanolamine, glycerol, tetrahydroxypropyl ethylene diamine, hydroxy - (1,1) - ethylene diphosphate or trimethylene amino acid.

一種用於銀觸媒鍍銅反應之化學鍍銅液,其中,該用於銀觸媒鍍銅反應之化學鍍銅液的pH值為11~13。 An electroless copper plating solution for a copper catalyst copper plating reaction, wherein the electroless copper plating solution for the silver catalyst copper plating reaction has a pH of 11 to 13.

一種銀觸媒鍍銅之方法,係包含:備有一工作電極,該工作電級表面具有銀觸媒;及將該工作電極置入一用於銀觸媒鍍銅反應之化學鍍銅液中,進行化學電鍍,其中,該用於銀觸媒鍍銅反應之化學鍍銅液係包含一銅離子源、一還原劑、一螯合劑及一加速劑,該加速劑係為具有含氮雜環之化合物,其中,該加速劑為1,10-菲羅啉、聯吡啶、2,9-亞甲基-1,10-菲羅啉、三吡啶或4-羥基吡啶,該銅離子源之濃度為0.01~0.2M、該還原劑之濃度為0.05~0.2M、該螯合劑的濃度為0.05~0.2M及該加速劑之濃度為1×10-6~1×10-5M,該銅離子源為硫酸銅、硝酸銅、氯化銅、碳酸銅、酒石酸銅、氫氧化銅或醋酸銅,該還原劑為甲醛、聚甲醛、次磷酸鈉、硼氫化鈉、硼氫化鉀、二甲基胺硼烷或葡萄糖,該螯合劑為乙二胺四乙酸、氨二乙酸、氨三乙酸、N-羥乙基乙二胺三乙酸、酒石酸鉀鈉、葡萄糖酸鈉、三乙醇胺、甘油、四羥丙基乙二氨、羥基-(1,1)-亞乙基二磷酸或氨基三亞甲基磷酸。 A silver catalyst copper plating method comprises: providing a working electrode, the working electric level surface has a silver catalyst; and placing the working electrode into an electroless copper plating solution for a silver catalyst copper plating reaction, Performing electroless plating, wherein the electroless copper plating solution for the silver catalyst copper plating reaction comprises a copper ion source, a reducing agent, a chelating agent and an accelerator, the accelerator having a nitrogen-containing heterocyclic ring a compound, wherein the accelerator is 1,10-phenanthroline, bipyridine, 2,9-methylene-1,10-phenanthroline, tripyridine or 4-hydroxypyridine, and the concentration of the copper ion source is 0.01~0.2M, the concentration of the reducing agent is 0.05~0.2M, the concentration of the chelating agent is 0.05~0.2M, and the concentration of the accelerator is 1×10 -6 ~1×10 -5 M, the copper ion source It is copper sulfate, copper nitrate, copper chloride, copper carbonate, copper tartrate, copper hydroxide or copper acetate. The reducing agent is formaldehyde, polyoxymethylene, sodium hypophosphite, sodium borohydride, potassium borohydride, dimethylamine boron. Alkane or glucose, the chelating agent is ethylenediaminetetraacetic acid, ammonia diacetic acid, ammonia triacetic acid, N-hydroxyethyl ethylenediamine triacetic acid, sodium potassium tartrate, Grape sugar, sodium, triethanolamine, glycerol, tetrahydroxypropyl ethylene diamine, hydroxy - (1,1) - ethylene diphosphate or trimethylene amino acid.

本發明之用於銀觸媒鍍銅反應之化學鍍銅液,包含一加速劑,進而達到提高進行銀觸媒鍍銅反應之速率之功效。 The electroless copper plating solution for the silver catalyst copper plating reaction of the invention comprises an accelerator, thereby achieving the effect of increasing the rate of the silver catalyst copper plating reaction.

本發明之用於銀觸媒鍍銅反應之化學鍍銅液,係可以避免短路的情況產生,進而達到提升鍍膜品質之功效。 The electroless copper plating solution for the silver catalyst copper plating reaction of the invention can avoid the occurrence of short circuit, thereby improving the coating quality.

本發明之用於銀觸媒鍍銅反應之化學鍍銅液,利用該加速劑縮短化學鍍銅反應之時間,係可以施以較低的能量即完成銀觸媒鍍銅反應,進而達到節省化學鍍銅反應所需耗費之能源之功效。 The electroless copper plating solution for the silver catalyst copper plating reaction of the invention can shorten the time of the electroless copper plating reaction by using the accelerator, and can perform the copper catalyst copper plating reaction with lower energy, thereby saving the chemical The energy required for the copper plating reaction.

本發明之用於銀觸媒鍍銅反應之化學鍍銅液,利用該加速劑縮短化學鍍銅反應之時間,減少進行銀觸媒鍍銅反應之人事及時間成本,進而達到降低化學鍍銅反應之成本之功效。 The electroless copper plating solution for the silver catalyst copper plating reaction of the invention utilizes the accelerator to shorten the time of the electroless copper plating reaction, reduce the personnel and time cost of performing the silver catalyst copper plating reaction, and thereby reduce the electroless copper plating reaction. The cost of the effect.

第1圖:係本發明用於銀觸媒鍍銅反應之化學鍍銅液合成之鍍銅件第A1~A4組及未添加該加速劑之化學鍍銅液及第A5組合成之鍍銅件之XRD圖。 Fig. 1 is a copper plating part A1~A4 of the electroless copper plating liquid for the silver catalyst copper plating reaction of the present invention, an electroless copper plating liquid without the accelerator, and a copper plated part of the A5 combination. XRD diagram.

第2圖:係本發明用於銀觸媒鍍銅反應之化學鍍銅液合成之鍍銅件第A1組之SEM影像圖。 Fig. 2 is a SEM image of a group A1 of a copper plating material for electroless copper plating of a silver catalyst for copper catalyst reaction.

第3圖:係本發明用於銀觸媒鍍銅反應之化學鍍銅液合成之鍍銅件第A2組之SEM影像圖。 Fig. 3 is a SEM image of the A2 group of the copper plated material for the electroless copper plating solution for the silver catalyst copper plating reaction of the present invention.

第4圖:係本發明用於銀觸媒鍍銅反應之化學鍍銅液合成之鍍銅件第A3組之SEM影像圖。 Fig. 4 is a SEM image of a group A3 of the copper plating material for electroless copper plating of the silver catalyst for copper catalyst reaction of the present invention.

第5圖:係本發明用於銀觸媒鍍銅反應之化學鍍銅液合成之鍍銅件第A4組之SEM影像圖。 Fig. 5 is a SEM image of a group A4 of the copper plating material for electroless copper plating of the silver catalyst for copper catalyst reaction of the present invention.

第6圖:係未添加該加速劑之化學鍍銅液合成之鍍銅件第A5組之SEM影像圖。 Fig. 6 is a SEM image of a group A5 of a copper plated material prepared by electroless copper plating without the addition of the accelerator.

第7圖:係本發明用於銀觸媒鍍銅反應之化學鍍銅液第B1~B4組及未添加該加速劑之化學鍍銅液第B5組之循環伏安圖。 Fig. 7 is a cyclic voltammogram of the group B1 to B4 of the electroless copper plating solution for the silver catalyst copper plating reaction of the present invention and the electroless copper plating liquid group B5 which is not added with the accelerator.

第8圖:係本發明本發明用於銀觸媒鍍銅反應之化學鍍銅液第C1~C4組及未添加該加速劑之化學鍍銅液第C5組之震盪頻率變化圖。 Fig. 8 is a graph showing changes in oscillation frequency of the electroless copper plating solution C1 to C4 for the silver catalyst copper plating reaction and the electroless copper plating liquid C5 group to which the accelerator is not added.

第9圖:係本發明本發明用於銀觸媒鍍銅反應之化學鍍銅液第C1~C4組及未添加該加速劑之化學鍍銅液第C5組之開路電位圖。 Fig. 9 is an open circuit potential diagram of the group C1 to C4 of the electroless copper plating solution for the silver catalyst copper plating reaction of the present invention and the electroless copper plating liquid group C5 to which the accelerator is not added.

第10圖:係本發明本發明用於銀觸媒鍍銅反應之化學鍍銅液第D1~D3組之震盪頻率變化圖。 Fig. 10 is a graph showing the oscillation frequency variation of the electroless copper plating solution of the present invention for the electroless copper plating solution of the silver catalyst in the D1 to D3 groups.

第11圖:係本發明本發明用於銀觸媒鍍銅反應之化學鍍銅液第D1~D3組之開路電位圖。 Fig. 11 is an open circuit potential diagram of the group D1 to D3 of the electroless copper plating solution for the silver catalyst copper plating reaction of the present invention.

第12圖:係本發明本發明用於銀觸媒鍍銅反應之化學鍍銅液第G1組及未添加該加速劑之化學鍍銅液第G2組之塔弗曲線圖。 Fig. 12 is a graph showing the graph of the Gf group of the electroless copper plating solution G1 group for the silver catalyst copper plating reaction and the electroless copper plating liquid G2 group to which the accelerator is not added.

第13圖:係本發明本發明用於銀觸媒鍍銅反應之化學鍍銅液於反應時間為10秒所得之鍍銅件之SEM影像圖。 Fig. 13 is a SEM image of a copper plating member obtained by using the electroless copper plating solution for the silver catalyst copper plating reaction in the present invention in a reaction time of 10 seconds.

第14圖:係本發明本發明用於銀觸媒鍍銅反應之化學鍍銅液於反應時間為20秒所得之鍍銅件之SEM影像圖。 Fig. 14 is a SEM image of a copper plated article obtained by using the electroless copper plating solution for the silver catalyst copper plating reaction in the present invention in a reaction time of 20 seconds.

第15圖:係本發明本發明用於銀觸媒鍍銅反應之化學鍍銅液於反應時間為50秒所得之鍍銅件之SEM影像圖。 Fig. 15 is a SEM image of a copper plating member obtained by using the electroless copper plating solution for the silver catalyst copper plating reaction in the present invention in a reaction time of 50 seconds.

第16圖:係本發明本發明用於銀觸媒鍍銅反應之化學鍍銅液於反應時間為100秒所得之鍍銅件之SEM影像圖。 Fig. 16 is a SEM image of a copper plating member obtained by using the electroless copper plating solution for the silver catalyst copper plating reaction in the present invention in a reaction time of 100 seconds.

第17圖:係未添加該加速劑之化學鍍銅液於反應時間為10秒之所得之鍍銅件之SEM影像圖。 Figure 17 is a SEM image of a copper plated piece obtained by adding an electroless copper plating solution of the accelerator to a reaction time of 10 seconds.

第18圖:係未添加該加速劑之化學鍍銅液於反應時間為100秒所得之鍍銅件之SEM影像圖。 Figure 18: SEM image of a copper plated piece obtained by adding an electroless copper plating solution of the accelerator to a reaction time of 100 seconds.

為讓本發明之上述及其他目的、特徵及優點能更明顯易懂,下文特舉本發明之較佳實施例,並配合所附圖式,作詳細說明如下:本發明之用於銀觸媒鍍銅反應之化學鍍銅液係包含一銅離子源,該銅離子源係包含銅離子;一還原劑,該還原劑係用以將銅離子還原成金屬銅;一螯合劑,該螯合劑係用以與銅離子進行螯合;一加速劑,該加速劑為具有含氮雜環之化合物;及一溶劑,該溶劑係用以混合該銅離子源、該還原劑、該螯合劑及該加速劑。 The above and other objects, features and advantages of the present invention will become more <RTIgt; The electroless copper plating solution for copper plating reaction comprises a copper ion source containing copper ions; a reducing agent for reducing copper ions to metallic copper; a chelating agent, the chelating agent For chelation with copper ions; an accelerator, the compound having a nitrogen-containing heterocycle; and a solvent for mixing the copper ion source, the reducing agent, the chelating agent, and the acceleration Agent.

詳言之,該銅離子源係用以提供銅離子,該銅離子源為一般化學鍍銅反應中所使用的銅化合物,特別係為可以溶解於該溶劑中且游離形成銅離子之銅化合物,該銅離子源可以為硫酸銅、硝酸銅、氯化銅、碳 酸銅、酒石酸銅、氫氧化銅或醋酸銅等,在此係不對該銅離子源的種類多做限制,較佳選用純度較高之銅離子源,以避免雜質對鍍層性質造成影響,於本實施例中,該銅離子源係為硫酸銅,所使用的硫酸銅之純度為97.5%。 In particular, the copper ion source is used to provide copper ions, which are copper compounds used in general electroless copper plating reactions, in particular, copper compounds which can be dissolved in the solvent and freely form copper ions. The copper ion source may be copper sulfate, copper nitrate, copper chloride, carbon Acid copper, copper tartrate, copper hydroxide or copper acetate, etc., in this case, the type of copper ion source is not limited, and a copper ion source with higher purity is preferably used to avoid the influence of impurities on the plating property. In the examples, the copper ion source is copper sulfate, and the purity of the copper sulfate used is 97.5%.

該還原劑係為可以提供電子之化合物,利用該還原劑提供電子予該銅離子源之銅離子,以將銅離子還原形成金屬銅並沉積於一基板上。該還原劑係可以為甲醛、聚甲醛、次磷酸鈉、硼氫化鈉、硼氫化鉀、二甲基胺硼烷或葡萄糖等化合物,於本實施例中,係使用價格低、運用範圍廣且還原力佳的甲醛作為還原劑,所使用之甲醛的純度為24%。 The reducing agent is a compound capable of providing electrons, and the reducing agent is used to supply electrons to the copper ions of the copper ion source to reduce copper ions to form metal copper and deposit on a substrate. The reducing agent may be a compound such as formaldehyde, polyoxymethylene, sodium hypophosphite, sodium borohydride, potassium borohydride, dimethylamine borane or glucose. In the present embodiment, the utility model has the advantages of low price, wide application range and reduction. As a reducing agent, Lijia's formaldehyde has a purity of 24%.

該螯合劑係用以與該銅離子源中的銅離子進行螯合,該螯合劑可以為乙二胺四乙酸(EDTA)、氨二乙酸、氨三乙酸、N-羥乙基乙二胺三乙酸、酒石酸鉀鈉、葡萄糖酸鈉、三乙醇胺、甘油、四羥丙基乙二氨、羥基-(1,1)-亞乙基二磷酸(HEDP)或氨基三亞甲基磷酸(ATMP),於本實施例中,該螯合劑係為乙二胺四乙酸。 The chelating agent is used for chelation with copper ions in the copper ion source, and the chelating agent may be ethylenediaminetetraacetic acid (EDTA), ammonia diacetic acid, ammonia triacetic acid, N-hydroxyethyl ethylenediamine Acetic acid, sodium potassium tartrate, sodium gluconate, triethanolamine, glycerol, tetrahydroxypropyl ethylene diamine, hydroxy-(1,1)-ethylene diphosphate (HEDP) or aminotrimethylene phosphate (ATMP), In this embodiment, the chelating agent is ethylenediaminetetraacetic acid.

該加速劑係用以加速銀觸媒鍍銅反應,該加速劑係為具有含氮雜環之化合物,該加速劑具有非定域性π鍵,當該加速劑吸附於銀觸媒之表面並與銅離子形成配合物,將有助於電子的傳遞。較佳地,該加速劑為具有兩個含氮雜環之化合物,係可以更大幅地加速銀觸媒鍍銅反應之進行。詳言之,該加速劑可以為1,10-菲羅啉(1,10-Phenanthroline)、聯吡啶(2-2’-bipyridine)、2,9-亞甲基-1,10-菲羅啉(Neocuproine)、三吡啶(2,2':6',2"-Terpyridine)或4-羥基吡啶(4-Hydroxypyridine)等具有含氮雜環之化合物。 The accelerator is used to accelerate the silver catalyst copper plating reaction, and the accelerator is a compound having a nitrogen-containing hetero ring, and the accelerator has a non-localized π bond, when the accelerator is adsorbed on the surface of the silver catalyst and Forming a complex with copper ions will contribute to the transfer of electrons. Preferably, the accelerator is a compound having two nitrogen-containing heterocycles, which can accelerate the progress of the silver catalyst copper plating reaction more greatly. In particular, the accelerator may be 1,10-phenanthroline, bi-2'-bipyridine, 2,9-methylene-1,10-phenanthroline. (Neocuproine), a compound having a nitrogen-containing hetero ring such as tripyridine (2,2':6',2"-Terpyridine) or 4-hydroxypyridine.

該溶劑係用以混合該銅離子源、該還原劑、該螯合劑及該加速劑,使上述該等化合物可以均勻地在該溶劑中,該溶劑係可以為水,但並不以此為限。本實施例之用於銀觸媒鍍銅反應之化學鍍銅液的溶劑為去離子水,係由Millipore Milli-Q超純水機所製造,去離子水於25℃時的電 阻值為18.2MΩ×cm。 The solvent is used to mix the copper ion source, the reducing agent, the chelating agent and the accelerator, so that the above compounds can be uniformly in the solvent, and the solvent system can be water, but not limited thereto. . The solvent for the electroless copper plating solution for the silver catalyst copper plating reaction of the present embodiment is deionized water, which is manufactured by Millipore Milli-Q ultrapure water machine, and the deionized water is charged at 25 ° C. The resistance is 18.2 MΩ×cm.

本發明之用於銀觸媒鍍銅反應之化學鍍銅液係包含濃度為0.01~0.2之該銅離子源、濃度為0.05~0.2M之該還原劑、濃度為0.05~0.2M之該螯合劑及濃度為1×10-6~1×10-5M之該加速劑,較佳地,由於甲醛於pH值大於11才具有還原銅離子之能力,當pH值大於13時會造成該用於銀觸媒鍍銅反應之化學鍍銅液的組成成分分解,造成穩定性不佳,因此係利用氫氧化鈉調整該用於銀觸媒鍍銅反應之化學鍍銅液的pH值約11~13,亦可以利用氫氧化鉀、硫酸或其他有機酸調整該用於銀觸媒鍍銅反應之化學鍍銅液的pH值。於本實施例中,該用於銀觸媒鍍銅反應之化學鍍銅液係包含濃度為0.1M之該銅離子源、濃度為0.1M之該還原劑、濃度為0.1M之該螯合劑及濃度為3.2×10-5M之該加速劑,該用於銀觸媒鍍銅反應之化學鍍銅液的pH值為12.3。 The electroless copper plating solution for the silver catalyst copper plating reaction of the present invention comprises the copper ion source having a concentration of 0.01 to 0.2, the reducing agent having a concentration of 0.05 to 0.2 M, and the chelating agent having a concentration of 0.05 to 0.2 M. And the accelerator having a concentration of 1×10 -6 to 1×10 −5 M, preferably, the formaldehyde has the ability to reduce copper ions at a pH of more than 11, and the pH is greater than 13 The composition of the electroless copper plating solution of the silver catalyst copper plating reaction is decomposed, resulting in poor stability. Therefore, the pH of the electroless copper plating solution for the silver catalyst copper plating reaction is adjusted by sodium hydroxide to about 11-13. The pH of the electroless copper plating solution for the silver catalyst copper plating reaction can also be adjusted by using potassium hydroxide, sulfuric acid or other organic acid. In this embodiment, the electroless copper plating solution for the silver catalyst copper plating reaction comprises the copper ion source having a concentration of 0.1 M, the reducing agent having a concentration of 0.1 M, the chelating agent having a concentration of 0.1 M, and The accelerator having a concentration of 3.2 × 10 -5 M has a pH of 12.3 for the electroless copper plating solution for the silver catalyst copper plating reaction.

本發明另包含使用該用於銀觸媒鍍銅反應之化學鍍銅液所進行之銀觸媒鍍銅反應,該銀觸媒鍍銅反應係包含備有一基板,該基板表面吸附有一銀觸媒;及將該基板置入該用於銀觸媒鍍銅反應之化學鍍銅液中,以進行化學鍍銅反應,以獲得一鍍銅件,該鍍銅件表面係具有一銅鍍層。 The invention further comprises a silver catalyst copper plating reaction using the electroless copper plating solution for the silver catalyst copper plating reaction, wherein the silver catalyst copper plating reaction system comprises a substrate having a silver catalyst adsorbed on the surface of the substrate. And placing the substrate into the electroless copper plating solution for the silver catalyst copper plating reaction to perform an electroless copper plating reaction to obtain a copper plated member having a copper plating layer on the surface.

在本實施例中的銀觸媒鍍銅反應,是由兩個半反應式所組成的氧化還原反應,包含陽極的甲醛氧化反應以及陰極的銅離子還原反應,其反應式分別列於下式(1)及下式(2),下式(3)則為全反應式:陽極反應式:2HCHO+4OH- → 2HCOO-+H2+2H2O+2e-…式(1) The silver catalyst copper plating reaction in this embodiment is a redox reaction composed of two semi-reactive formulas, including an oxidation reaction of an anode and a copper ion reduction reaction of a cathode, and the reaction formulas thereof are respectively listed in the following formula ( 1) and the following formula (2), the following formula (3) is the full reaction type: anode reaction formula: 2HCHO + 4OH - → 2HCOO - + H 2 + 2H 2 O + 2e - ... (1)

陰極反應式:Cu2++2e- → Cu…式(2) Cathodic reaction formula: Cu 2+ +2e - → Cu... (2)

全反應式:Cu2++2HCHO+4OH- → Cu+2HCOO-+2H2O+H2…式(3) Full reaction formula: Cu 2+ +2HCHO+4OH - → Cu+2HCOO - +2H 2 O+H 2 (3)

在銀觸媒鍍銅反應中,銀觸媒主要催化甲醛放出電子,使該用於銀觸媒鍍銅反應之化學鍍銅液之中的銅離子接收甲醛放出之電子,並進行還原反應而於基材上沉積金屬銅,因此銀觸媒對甲醛之催化會影響銀觸媒鍍銅反應之鍍銅速率與催化活性,而加速劑中的含氮雜環之氮原子在銀奈米粒子表面形成Ag-N的鍵結,在進行化學吸附之過程改變銀觸媒表面的靜電結構與加速CH2(OH)O-的產生及脫附HCOO-增強金屬的電荷轉移,影響銀觸媒鍍銅反應並提高甲醛的氧化。 In the silver catalyst copper plating reaction, the silver catalyst mainly catalyzes the emission of electrons by the formaldehyde, so that the copper ions in the electroless copper plating solution for the silver catalyst copper plating reaction receive the electrons emitted by the formaldehyde and undergo a reduction reaction. The metal copper is deposited on the substrate, so the catalytic reaction of the silver catalyst to formaldehyde affects the copper plating rate and catalytic activity of the silver catalyst copper plating reaction, and the nitrogen atom of the nitrogen-containing heterocyclic ring in the accelerator forms on the surface of the silver nanoparticle. The bonding of Ag-N changes the electrostatic structure of the silver catalyst surface during the chemisorption process and accelerates the generation of CH 2 (OH)O- and desorbs the charge transfer of HCOO-reinforced metal, affecting the silver catalyst copper plating reaction. And increase the oxidation of formaldehyde.

以加速劑為1,10-菲羅啉為例,其銀觸媒鍍銅反應的過程為透過氮原子所含的孤電子對與銀離子配體進行複合,並藉由配位體進行化學吸附於銀觸媒表面上,與銀觸媒形成Ag-N伸縮震盪譜帶(Stretching bands),且增強在化學相互作用機制與原子尺度(Atomic-scale)的活性位點,並與金屬配位體形成垂直角度相接,進而改變銀觸媒表面的靜電結構,加速自由基(CH2(OH)O-)的吸附與HCOO-的脫附,以此提高甲醛的氧化及化學鍍動力學。 Taking the accelerator as 1,10-phenanthroline as an example, the process of copper plating in the silver catalyst is a process of complexing with a silver ion ligand through a lone pair of electrons contained in a nitrogen atom, and chemical adsorption by a ligand. On the surface of the silver catalyst, Ag-N stretching bands are formed with the silver catalyst, and the chemical interaction mechanism and the atomic scale (Atomic-scale) active sites are enhanced, and the metal ligands are combined with the metal ligands. The vertical angles are connected to change the electrostatic structure of the silver catalyst surface, accelerate the adsorption of free radicals (CH2(OH)O-) and the desorption of HCOO-, thereby increasing the oxidation and electroless plating kinetics of formaldehyde.

本發明之用於銀觸媒鍍銅反應之化學鍍銅液係包含該加速劑,該加速劑為含有含氮雜環之化合物,該加速劑具有非定域性π鍵,當該加速劑吸附於銀觸媒之表面並與二價銅離子形成配合物,將有助於電子的傳遞,使銀觸媒鍍銅反應的速率可以有效提升,並且避免短路的情況產生,以提高該銅鍍膜的品質,再者,利用該用於銀觸媒鍍銅反應之化學鍍銅液,係可以節省於銀觸媒鍍銅反應所必須耗費的能源,達到降低銀觸媒鍍銅反應成本的功效;又,藉由該銅離子源、該還原劑、該螯合劑及該加速劑特定的添加濃度,係可以更進一步地節省反應所需的時間,進而達到降低生產之時間成本的功效。 The electroless copper plating solution for the silver catalyst copper plating reaction of the present invention comprises the accelerator, the accelerator is a compound containing a nitrogen-containing heterocycle, and the accelerator has a non-localized π bond, when the accelerator adsorbs On the surface of the silver catalyst and forming a complex with the divalent copper ions, it will contribute to the electron transfer, so that the rate of the copper catalyst copper plating reaction can be effectively improved, and the short circuit condition can be avoided to improve the copper plating film. Quality, in addition, the use of the electroless copper plating solution for the silver catalyst copper plating reaction can save the energy required for the silver catalyst copper plating reaction, and achieve the effect of reducing the cost of the silver catalyst copper plating reaction; By using the copper ion source, the reducing agent, the chelating agent and the specific concentration of the accelerator, the time required for the reaction can be further saved, thereby achieving the effect of reducing the time cost of production.

為了證實本發明之用於銀觸媒鍍銅反應之化學鍍銅液係可以提升銀觸媒鍍銅反應之反應速率,係進行下列試驗,在此需要說明的是, 於試驗中所使用之銀觸媒為硝酸銀、聚乙烯吡咯烷酮及聯胺共同反應獲得之一銀奈米粒子,該銀奈米粒子之平均粒徑大小約34±5nm,於試驗開始前,係先將該銀奈米粒子沉積於一工作電極(working electrode)表面,並將該工作電極浸泡於本發明之用於銀觸媒鍍銅反應之化學鍍銅液中,以於該工作電極表面形成該銅鍍層: In order to confirm that the electroless copper plating system for the silver catalyst copper plating reaction of the present invention can increase the reaction rate of the silver catalyst copper plating reaction, the following tests are carried out, and it should be noted that The silver catalyst used in the test is a silver nitrate particle obtained by co-reacting silver nitrate, polyvinylpyrrolidone and hydrazine. The average particle size of the silver nanoparticle is about 34±5 nm, which is before the start of the test. Depositing the silver nanoparticle on a working electrode surface, and immersing the working electrode in the electroless copper plating solution for the silver catalyst copper plating reaction of the present invention to form the surface of the working electrode Copper plating:

(A)銅鍍層之XRD繞射圖及SEM影像圖(A) XRD diffraction pattern and SEM image of copper plating

本測試之用於銀觸媒鍍銅反應之化學鍍銅液係包含濃度為0.05M之該銅離子源、濃度為0.1M之該還原劑、濃度為0.1M之該螯合劑及濃度為3.2×10-5M之該加速劑,該銅離子源為硫酸銅,該還原劑為甲醛,該螯合劑為EDTA,並改變該加速劑的種類為1,10-菲羅啉、2,9-亞甲基-1,10-菲羅啉、三吡啶及4-羥基吡啶,以無添加任何該加速劑之一用於銀觸媒鍍銅反應之化學鍍銅液作為對照組,以依序獲得該鍍銅件第A1組、第A2組、第A3組、第A4組及第A5組,並利用x-光繞射光譜分析該鍍銅件之銅鍍層的成分與晶格排列,如第1圖所示,本測試中進一步地利用電子顯微鏡觀察該鍍銅件第A1~A5組表面形貌,依序如第2~6圖所示。 The electroless copper plating solution for the silver catalyst copper plating reaction of the present test comprises the copper ion source having a concentration of 0.05 M, the reducing agent having a concentration of 0.1 M, the chelating agent having a concentration of 0.1 M, and a concentration of 3.2×. 10 to 5 M of the accelerator, the copper ion source is copper sulfate, the reducing agent is formaldehyde, the chelating agent is EDTA, and the type of the accelerator is changed to 1,10-phenanthroline, 2,9-Asia Methyl-1,10-phenanthroline, tripyridine and 4-hydroxypyridine were used as a control group without adding any one of the accelerators for the silver catalyst copper plating reaction. Copper plated parts A1, A2, A3, A4 and A5, and the composition and lattice arrangement of the copper plating of the copper plated parts were analyzed by x-ray diffraction spectroscopy, as shown in Fig. 1. As shown, in this test, the surface morphology of the A1 to A5 groups of the copper-plated parts was further observed by an electron microscope, as shown in the second to sixth figures.

由第1圖之XRD繞射圖譜可以得知由第A1~A5組所合成之銅鍍層,該鍍銅層皆以(1 11)的晶格方向生長,該鍍銅層的結構為面心立方堆積(FCC),由於該銅鍍層係以(111)方向生長,故該鍍銅層具有高延展性及低電阻率。另請參照第2~6圖所示,相較於第A3~A5組所合成之銅鍍層具有較大的孔隙且表面形貌不均,由第A1及A2組合成之銅鍍層的分布平均,並且可以均勻地包覆於該工作電極之表面,故利用1,10-菲羅啉及2,9-亞甲基-1,10-菲羅啉作為該加速劑所合成之該鍍銅件係具有較佳的鍍膜性質。另外,由第A1~A5之SEM影像可以得知,於該用於銀觸媒鍍銅反應之化學鍍銅液中加入不同之該加速劑,確實會使該鍍銅件之銅鍍層產生外觀上的改變,進而改變該鍍銅件的銅鍍層的均一性及披覆 度等鍍膜品質。 From the XRD diffraction pattern of Fig. 1, the copper plating layer synthesized by the group A1~A5 can be known, and the copper plating layer is grown in the lattice direction of (11), and the structure of the copper plating layer is face-centered cubic. Stacking (FCC), since the copper plating is grown in the (111) direction, the copper plating layer has high ductility and low electrical resistivity. Please also refer to the second to sixth figures. Compared with the A3~A5 group, the copper plating layer has larger pores and the surface morphology is uneven. The distribution of the copper plating layer formed by the combination of A1 and A2 is average. And can be uniformly coated on the surface of the working electrode, so the copper plating system synthesized by using 1,10-phenanthroline and 2,9-methylene-1,10-phenanthroline as the accelerator It has better coating properties. In addition, it can be known from the SEM images of A1 to A5 that the addition of the accelerator to the electroless copper plating solution for the copper plating reaction of the silver catalyst does cause the copper plating of the copper plating member to have an appearance. Change, which in turn changes the uniformity and coverage of the copper plating of the copper plated part Degree of coating quality.

(B)陰極循環伏安法分析(B) Cathodic cyclic voltammetry analysis

於本試驗中,係使用三級式電解槽進行電化學分析,於電解槽內係設有該工作電極、一對應電極(counter electrode)及一參考電極(reference electrode),該工作電極為表面積是0.159cm2之玻璃碳電極(glassy carbon electrode),該對應電極為鉑金片,該參考電極為飽和甘汞電極(Hg/Hg2Cl2),並且該工作電極之表面塗佈有重量密度為30μg/cm2之銀奈米粒子,本測試之陽極電解液為濃度為0.1M之該還原劑、0.1M之該螯合劑及3.2×10-5M之該加速劑,陰極電解液為濃度為0.05M之該銅離子源、0.1M之該還原劑、0.1M之該螯合劑及3.2×10-5M之該加速劑,並且陰極電解液及陽極電解液皆使用氫氧化鈉調整pH值至12.3,該銅離子源為硫酸銅,該還原劑為甲醛,該螯合劑為EDTA,該陽極電解液中的該加速劑種類為1,10-菲羅啉、2,9-亞甲基-1,10-菲羅啉、三吡啶及4-羥基吡啶,及一無添加任何該加速劑之陽極電解液作為對照組,以依序獲得該鍍銅件第B1組、第B2組、第B3組、第B4組及第B5組,以掃描速率為5mVs-1進行循環伏安法(cyclic voltammetry)測試,結果如第7圖所示。為去除氧氣對測試結果的干擾,在進行測試之前,係以飽和氮氣通入持溫於30℃之陽極電解液及陰極電解液中20分鐘,並且於測試時持續通以微量氮氣確保氮氣為飽和狀態。 In this test, a three-stage electrolytic cell is used for electrochemical analysis, and the working electrode, a counter electrode and a reference electrode are disposed in the electrolytic cell, and the working electrode has a surface area of 0.159 cm 2 of glassy carbon electrode, the corresponding electrode is a platinum piece, the reference electrode is a saturated calomel electrode (Hg/Hg 2 Cl 2 ), and the surface of the working electrode is coated with a weight density of 30 μg /cm 2 of silver nanoparticles, the anolyte of the test is 0.1M of the reducing agent, 0.1M of the chelating agent and 3.2×10 -5 M of the accelerator, the catholyte concentration is 0.05 a copper ion source of M, 0.1 M of the reducing agent, 0.1 M of the chelating agent, and 3.2×10 -5 M of the accelerator, and the catholyte and the anolyte are all adjusted to a pH of 12.3 using sodium hydroxide. The copper ion source is copper sulfate, the reducing agent is formaldehyde, the chelating agent is EDTA, and the accelerator type in the anolyte is 1,10-phenanthroline, 2,9-methylene-1, 10-phenanthroline, tripyridine and 4-hydroxypyridine, and no addition of any accelerator Electrolytic solution as a control group, to sequentially obtain the copper member of Group B1, Group B2 first, the first group B3, B4 first group and second group B5, 5mVs -1 at a scan rate of cyclic voltammetry (cyclic voltammetry) Test, the results are shown in Figure 7. In order to remove the interference of oxygen on the test results, the test was carried out with saturated nitrogen gas into the anolyte and catholyte maintained at 30 ° C for 20 minutes, and the nitrogen gas was saturated with nitrogen gas during the test. status.

在電位為-0.43V(vs.SCE)出現之氧化峰係為生成一價銅(Cu(I))之特徵峰,在電位為-0.21V(vs.SCE)出現之氧化峰為生成二價銅(Cu(Ⅱ))及氧化生成氧化銅之特徵峰,而在電位為-0.37V(vs.SCE)的還原峰為氧化銅游離之特徵峰,電位為-0.68V(vs.SCE)的還原峰為二價銅(Cu(Ⅱ))還原成金屬銅之特徵峰,電位在-0.96V(vs.SCE)的還原峰則是銅與螯合劑錯合所產生之特徵峰。由第7圖觀察可以得知,相較於第B5 組,第B1~B4組係可以抑制氧化銅的形成及加速錯合物之解離,由於氧化銅的沉澱將會對化學鍍銅反應之速率造成負面影響,而錯合物的解離速度越快有利於錯合物的陰極還原,如此一來,可證明以第B1~B4組作為陽極電解液係對於銀觸媒化學鍍銅反應之反應速率有所助益,特別是第B1組加速反應的情況在所有組別中最為突出。 The oxidation peak appearing at a potential of -0.43 V (vs. SCE) is a characteristic peak of the formation of monovalent copper (Cu(I)), and the oxidation peak appearing at a potential of -0.21 V (vs. SCE) is a bivalent formation. Copper (Cu(II)) and oxidized to form a characteristic peak of copper oxide, while the reduction peak at a potential of -0.37V (vs. SCE) is a characteristic peak of copper oxide free, and the potential is -0.68V (vs. SCE). The reduction peak is a characteristic peak of reduction of copper (Cu(II)) to metallic copper, and the reduction peak of -0.96V (vs. SCE) is a characteristic peak produced by the mismatch of copper and chelating agent. It can be seen from the observation in Figure 7, compared to the B5 In the group, the B1~B4 group can inhibit the formation of copper oxide and accelerate the dissociation of the complex compound. Since the precipitation of copper oxide will have a negative impact on the rate of the electroless copper plating reaction, the faster the dissociation speed of the complex compound is beneficial. Cathodic reduction of the complex compound, as a result, it can be proved that the reaction rate of the B1 to B4 group as the anolyte system for the electroless copper plating reaction of the silver catalyst is helpful, especially in the case of the accelerated reaction of the B1 group. Most prominent in all groups.

(C)不同加速劑之銀觸媒化學鍍銅反應的震盪頻率變化及開路電位測試(C) Oscillation frequency change and open circuit potential test of silver catalyst electroless copper plating reaction with different accelerators

本試驗係使用電化學石英晶體微天秤來形銀觸媒鍍銅反應之動力學分析,本試驗之工作電極為石英晶體微天秤,石英晶體微天秤的基才材質為面積0.159cm2之黃金石英片,參考電極為拉金毛細管(Luggin capillary)之飽和甘汞電極,並且該工作電極之表面塗佈有重量密度為30μg/cm2之銀奈米粒子,將該工作電極及該參考電極置放於本發明之用於銀觸媒鍍銅反應之化學鍍銅液中並通以電流,該用於銀觸媒鍍銅反應之化學鍍銅液係包含0.05M之銅離子源、0.1M之還原劑、0.1M之螯合劑即3.2×10-5M之加速劑,該銅離子源為硫酸銅,該還原劑為甲醛,該螯合劑為EDTA,調整該加速劑的種類為1,10-菲羅啉(第C1組)、2,9-亞甲基-1,10-菲羅啉(第C2組)、三吡啶(第C3組)及4-羥基吡啶(第C4組),及一無添加任何該加速劑之陽極電解液作為對照組(第C5組),進行化學鍍銅沉積反應,以獲得震盪頻率變化及開路電位之測試結果,結果依序如第8及9圖所示。為去除氧氣對測試結果的干擾,在進行測試之前,係以飽和氮氣通入持溫於30℃之銀觸媒鍍銅反應之化學鍍銅液中20分鐘,並且於測試時持續通以微量氮氣確保氮氣為飽和狀態。 This experiment is based on the kinetic analysis of the electrochemical copper crystal micro-scale to shape the silver catalyst copper plating reaction. The working electrode of this experiment is quartz crystal micro-scale, the crystal material of quartz crystal micro-scale is the gold quartz piece with the area of 0.159cm2. The reference electrode is a saturated calomel electrode of a Luggin capillary, and the surface of the working electrode is coated with silver nanoparticle having a weight density of 30 μg/cm 2 , and the working electrode and the reference electrode are placed on The electroless copper plating solution for the silver catalyst copper plating reaction of the present invention is connected with an electric current, and the electroless copper plating liquid for the silver catalyst copper plating reaction comprises a 0.05 M copper ion source and a 0.1 M reducing agent. 0.1M chelating agent is 3.2×10 -5 M accelerator, the copper ion source is copper sulfate, the reducing agent is formaldehyde, the chelating agent is EDTA, and the type of the accelerator is adjusted to 1,10-firo Porphyrin (Group C1), 2,9-methylene-1,10-phenanthroline (Group C2), tripyridine (Group C3) and 4-hydroxypyridine (Group C4), and no addition Any anolyte of the accelerator is used as a control group (Group C5), and an electroless copper deposition reaction is performed to obtain an oscillation frequency. Changes and results of the open-circuit potential, the results sequentially as shown in FIGS. 8 and 9. In order to remove the interference of oxygen on the test results, the test was carried out with saturated nitrogen gas into the electroless copper plating solution of the silver catalyst copper plating reaction at 30 ° C for 20 minutes, and the test was continued with a trace of nitrogen gas. Make sure the nitrogen is saturated.

請先參照第8圖所示,由震盪頻率變化中能顯示出銀奈米粒子之沉積動力學,大約可分為頻率無明顯變化的潛伏期(Incubation period)及頻率產生加速變化的加速期(Acceleration period)兩個階段,由第9圖 觀察可以得知,第C1~C3在反應15秒後之加速其變化相較於第C4及C5組來的大,其中又以第C1組在反應15秒後的震盪頻率變化尤為明顯。 Please refer to Figure 8 firstly, the sedimentation dynamics of silver nanoparticles can be shown by the change of oscillation frequency, which can be divided into the incubation period with no significant change in frequency and the acceleration period with accelerated change of frequency (Acceleration). Period) two stages, by figure 9 It can be seen that the change of C1~C3 after 15 seconds of reaction is larger than that of the C4 and C5 groups, and the change of the oscillation frequency of the C1 group after 15 seconds of reaction is particularly obvious.

續參照第9圖所示,在化學鍍銅反應進行時,會先經過一段非穩態的時間後到達穩態的混合電位(Steady-state Mixed-potential),當達到混合電位之後即開始進行沉積反應,由非穩態至穩態的沉積反應開始稱為前導時間(Induction period)。由於前導時間的長短將會影響到銀觸媒化學鍍銅反應於工業上的時間成本,故理想的化學鍍銅反應之前導時間應較短。由第9圖可以明顯觀察到第C1組的前導時間明顯較其他組別來得短暫,詳言之,使用第C1組之銀觸媒鍍銅反應之開路電位(open circuit potential)於反應開始後先往負移至第一個混合電位(Emp=-0.55V(vs.SCE)),並於反應開始約15秒後迅速到達更負值的穩定混合電位(-0.68V(vs.SCE)),並開始進行沉積反應。更詳言之,第一個混合電位為生成活性中心,故較緩慢而需要較長的反應時間,當銀觸媒表面覆蓋一定程度的活性中心時,便會迅速引發反應到達穩態混合電位,該加速劑吸附在銀觸媒表面已改變電雙層構造及該工作電極的有效面積,且於該工作電極與化學鍍銅液的介面引入新的靜電力,降低甲醛的氧化產物或其他氧化的中間產物之生成,進而提升銀觸媒化學鍍銅反應之速率。 Continuing with reference to Fig. 9, when the electroless copper plating reaction is carried out, a steady-state mixed potential (Steady-state Mixed-potential) is first passed after a non-steady time, and deposition is started after the mixed potential is reached. The reaction, starting from an unsteady to steady state deposition reaction, is called the Induction period. Since the length of the lead time will affect the industrial time cost of the silver catalyst electroless copper plating reaction, the ideal electroless copper plating reaction should have a shorter lead time. It can be clearly seen from Fig. 9 that the lead time of the C1 group is significantly shorter than that of the other groups. In detail, the open circuit potential of the silver catalyst copper plating reaction of the C1 group is used after the start of the reaction. Move negatively to the first mixed potential (E mp =-0.55V (vs. SCE)) and quickly reach a more negative stable mixed potential (-0.68V (vs. SCE)) after about 15 seconds from the start of the reaction. And begin the deposition reaction. More specifically, the first mixed potential is the active center, so it is slower and requires a longer reaction time. When the surface of the silver catalyst covers a certain degree of active center, it will promptly initiate the reaction to reach the steady-state mixed potential. The adsorption of the accelerator on the surface of the silver catalyst has changed the electric double layer structure and the effective area of the working electrode, and introduced a new electrostatic force on the interface between the working electrode and the electroless copper plating solution to reduce the oxidation product of formaldehyde or other oxidation. The formation of intermediate products, thereby increasing the rate of electroless copper plating reaction of silver catalyst.

(D)以不同濃度之1,10-菲羅啉作加速劑之銀觸媒化學鍍銅反應的震盪頻率變化及開路電位測試(D) Oscillation frequency change and open circuit potential test of silver catalyst electroless copper plating with different concentrations of 1,10-phenanthroline as accelerator

由測試(C)已知利用1,10-菲羅啉作為該加速劑之銀觸媒化學鍍銅反應之化學鍍銅液之潛伏期及前導時間皆短,可有效節省電化學反應之時間,於本測試中,係利用不同濃度之1,10-菲羅啉作為加速劑,於該銀觸媒化學鍍銅反應之化學鍍銅液中,1,10-菲羅啉濃度分別為1.6×10-5M(第D1組)、3.2×10-5M(第D2組)及6.4×10-5M(第D3組),並依循測試(C)中所述之測試方法,進行銀觸媒化學鍍銅反應,以獲得震盪頻率 變化及開路電位之測試結果,結果依序如第10及11圖所示。 It is known from test (C) that the incubation period and the lead time of the electroless copper plating solution using the 1,10-phenanthroline as the accelerator for the silver catalyst electroless copper plating reaction are short, which can effectively save the electrochemical reaction time. In this test, different concentrations of 1,10-phenanthroline were used as accelerators. In the electroless copper plating solution of the silver catalyst electroless copper plating, the concentration of 1,10-phenanthroline was 1.6×10 - 5 M (Group D1), 3.2×10 -5 M (Group D2) and 6.4×10 -5 M (Group D3), and follow the test method described in Test (C) for silver catalyst chemistry The copper plating reaction was carried out to obtain the test results of the oscillation frequency change and the open circuit potential, and the results were as shown in Figs. 10 and 11.

由第10~11圖可發現第D1~D3組相較於試驗(C)中的第C2~C5組,皆具有較短的潛伏期及前導時間,並且當1,10-菲羅啉濃度為3.2×10-5M時,於反應開始15秒後即迅速進入加速期,相較其他濃度(第D1及D3組)明顯來得快,且於第11圖之開路電位曲線圖發現,當1,10-菲羅啉的濃度為3.2×10-5M時,可以最快到達穩態電位以接續進行鍍銅沉積反應。 From Figures 10 to 11, it can be found that the D1~D3 group has a shorter latency and lead time than the C2~C5 group in the test (C), and the concentration of 1,10-phenanthroline is 3.2. At ×10 -5 M, it quickly enters the acceleration phase 15 seconds after the start of the reaction, which is significantly faster than the other concentrations (Groups D1 and D3), and is found in the open circuit potential plot of Figure 11, when 1,10 When the concentration of phenanthroline is 3.2×10 -5 M, the steady state potential can be reached as soon as possible to continue the copper plating deposition reaction.

(E)不同加速劑之平均質量活性及平均沉積速率分析(E) Analysis of average mass activity and average deposition rate of different accelerators

本分析係選用該加速劑為1,10-菲羅啉(第E1組)、聯吡啶(第E2組)、2,9-亞甲基-1,10-菲羅啉(第E3組)、三吡啶(第E4組)、4-羥基吡啶(第E5組)及未添加該加速劑(第E6組)的銀觸媒化學鍍銅反應之化學鍍銅液,並根據所得之震盪頻率變化結果,進一步計算獲得使用不同加速劑之銀觸媒化學鍍銅反應之化學鍍銅液的質量活性(mass activity)及平均沉積速率()。首先,係利用下式(4)計算得到銅沉積的重量(mg),式(4)中,△m為沉積銅的重量(g),△F為石英晶體振盪頻率變化,A為黃金石英片面積(即0.159cm2),μ為石英晶體剪力模數(即為2.947×1011gcm-1s-2),ρ為石英晶體密度(即為2.648g/cm3),F0為石英晶體振盪基本頻率,再將銅沉積的重量帶入下式(5)的mCu以計算獲得質量活性,式(5)中,mAg為銀觸媒之重量(mg),接著進一步藉由下式(6)獲得平均質量活性(),式(6)中的N為質量活性總數,由於在試驗(C)中的沉積時間係為110秒,並且每0.1秒紀錄一個質量活性的數值,故本試驗中的N為1100,最後,根據下式(7)計算獲得平均沉積速率,式(7)中的timesum為每個質量活性之沉積時間總合,本試驗之timesum為60555秒。將分析得到之平均質量活性及平均沉積速率列於下表1。 In this analysis, the accelerator was selected from 1,10-phenanthroline (Group E1), bipyridine (Group E2), 2,9-methylene-1,10-phenanthroline (Group E3), Pyridine (Group E4), 4-hydroxypyridine (Group E5) and electroless copper plating solution of silver catalyst electroless copper plating without addition of the accelerator (Group E6), and according to the resulting oscillation frequency change results Further calculating the mass activity and the average deposition rate of the electroless copper plating solution obtained by using the silver catalyst electroless copper plating reaction of different accelerators ( ). First, the weight (mg) of copper deposition is calculated by the following formula (4). In the formula (4), Δm is the weight (g) of the deposited copper, ΔF is the change of the oscillation frequency of the quartz crystal, and A is a gold quartz piece. Area (ie 0.159cm 2 ), μ is the quartz crystal shear modulus (ie 2.947×1011gcm -1 s -2 ), ρ is the quartz crystal density (ie 2.648g/cm 3 ), F0 is the quartz crystal oscillation basic Frequency, and then the weight of copper deposition is carried into m Cu of the following formula (5) to calculate the mass activity. In the formula (5), m Ag is the weight (mg) of the silver catalyst, and then further by the following formula (6) ) to obtain average mass activity ( N in the formula (6) is the total mass activity, since the deposition time in the test (C) is 110 seconds, and a value of mass activity is recorded every 0.1 second, the N in the test is 1100, and finally The average deposition rate was calculated according to the following formula (7). The time sum in the formula (7) is the total deposition time of each mass activity, and the time sum of the test is 60555 seconds. The average mass activity and average deposition rate obtained by the analysis are listed in Table 1 below.

由表1之分析結果顯示,平均質量活性及平均沉積速率由大至小的排序皆為第E1組、第E2組、第E3組、第E4組、第E5組及第E6組,即證明了相較於未添加任何加速劑之第E5組,使用1,10-菲羅啉、聯吡啶、2,9-亞甲基-1,10-菲羅啉、三吡啶及4-羥基吡啶的反應速率都明顯上升,以此證實本發明用於銀觸媒鍍銅反應之化學鍍銅液,由於其中所含有之該加速劑,得以加快銀觸媒鍍銅反應的進行,其中,又以加速劑為1,10-菲羅啉具有最高的平均質量活性及平均反沉積速率。 The analysis results in Table 1 show that the order of the average mass activity and the average deposition rate from the largest to the smallest are the E1 group, the E2 group, the E3 group, the E4 group, the E5 group and the E6 group, which proves Reaction of 1,10-phenanthroline, bipyridine, 2,9-methylene-1,10-phenanthroline, tripyridine and 4-hydroxypyridine compared to Group E5 without any accelerator added The rate is obviously increased, thereby confirming that the electroless copper plating solution for the silver catalyst copper plating reaction of the present invention can accelerate the copper catalyst copper plating reaction due to the accelerator contained therein, wherein the accelerator is further accelerated. 1,10-phenanthroline has the highest average mass activity and average deposition rate.

(F)不同濃度之1,10-菲羅啉作為銀觸媒化學鍍銅反應的加(F) Different concentrations of 1,10-phenanthroline as a catalyst for the electroless copper plating of silver catalyst 速劑之平均質量活性及平均沉積速率分析Analysis of average mass activity and average deposition rate of accelerator

本試驗與試驗(E)係採用相同的分析方法,對加速劑的莫耳濃度為1.6×10-5M之1,10-菲羅啉(第F1組)、3.2×10-5M之1,10-菲羅啉(第F2組)及6.4×10-5M之1,10-菲羅啉(第F3組)進行平均質量活性及平均沉積速率分析,結果如下表2所示。 This test and test (E) use the same analytical method, the molar concentration of the accelerator is 1.6 × 10 -5 M of 1,10-phenanthroline (Group F1), 3.2 × 10 -5 M of 1 , 10-phenanthroline (Group F2) and 6.4×10 -5 M 1,10-phenanthroline (Group F3) were analyzed for average mass activity and average deposition rate, and the results are shown in Table 2 below.

由表2顯示的結果呈現出第F1~F3組的平均質量活性及平均沉積速率都較測試(E)中未添加該加速劑之第E6組來得高,證實利用1,10-菲羅啉作為加速劑,確實可以加速銀觸媒化學鍍銅反應之速率,其中,又以濃度為3.2×10-5M之1,10-菲羅啉作為加速劑之反應速率最快。 The results shown in Table 2 show that the average mass activity and the average deposition rate of the F1 to F3 groups are higher than those of the E6 group in which the accelerator (E) is not added, and it is confirmed that 1,10-phenanthroline is used. The accelerator can indeed accelerate the rate of the electroless copper plating reaction of the silver catalyst. Among them, the reaction rate of the 1,10-phenanthroline having a concentration of 3.2×10 -5 M as the accelerator is the fastest.

(G)塔弗曲線分析(G) Tarver curve analysis

此分析係針對加速劑的莫耳濃度為3.2×10-5M之1,10-菲羅啉(第G1組)及未添加加速劑(第G2組)之用於銀觸媒鍍銅反應之化學鍍銅液進行線性伏安法以獲得極化曲線圖,並將電流值除以真實電化學活性面積後,獲得電流密度,將電流密度取對數值並與反應過電位作圖,即獲得如第12圖所示之塔弗曲線圖。由第12圖可以得知第G1組之過電位較第G2組來得負,證實添加1,10-菲羅啉作為加速劑具有加速甲醛催化的能力。 This analysis is for the silver catalyst copper plating reaction of the accelerator with a molar concentration of 3.2 × 10 -5 M 1,10-phenanthroline (Group G1) and no accelerator (G2 group). The electroless copper plating solution is subjected to linear voltammetry to obtain a polarization curve, and the current value is obtained by dividing the current value by the real electrochemical active area, and the current density is taken as a logarithmic value and plotted against the reaction overpotential, that is, The graph of the Tarver shown in Fig. 12. It can be seen from Fig. 12 that the overpotential of the G1 group is lower than that of the G2 group, and it is confirmed that the addition of 1,10-phenanthroline as an accelerator has the ability to accelerate the catalysis of formaldehyde.

(H)不同的反應時間所得之銅鍍層之SEM影像圖(H) SEM image of copper plating obtained by different reaction times

此分析係針對加速劑的莫耳濃度為3.2×10-5M之1,10-菲羅啉 之用於銀觸媒鍍銅反應之化學鍍銅液進行銀觸媒化學鍍銅反應,並調整反應時間為10秒、20秒、50秒及100秒,以獲得該銅鍍層,對該銅鍍層拍攝SEM影像依序如第13~16圖所示,另外,亦針對未添佳該加速劑之銀觸媒化學鍍銅反應之化學鍍銅液進行銀觸媒化學鍍銅反應,並由反應10秒及100秒後獲得該銅鍍層,對該銅鍍層拍攝SEM影像依序如第17~18圖所示。 This analysis is based on an electroless copper plating reaction of an electroless copper plating solution for a silver catalyst for copper plating of a catalyst having a molar concentration of 3.2 × 10 -5 M of 1,10-phenanthroline, and adjusting The reaction time is 10 seconds, 20 seconds, 50 seconds, and 100 seconds to obtain the copper plating layer. The SEM image of the copper plating layer is sequentially shown in Figures 13 to 16, and the accelerator is also not added. The electroless copper plating solution of the silver catalyst electroless copper plating reaction is subjected to a silver catalyst electroless copper plating reaction, and the copper plating layer is obtained after the reaction for 10 seconds and 100 seconds, and the SEM image of the copper plating layer is sequentially as shown in FIGS. 17-18. Shown.

由第13~16圖得知當反應開始20秒後即開始有銅沉積產生,並且當反應進行至100秒時,銅沉積更為明顯,由第17~18圖則皆無關察到有明顯銅沉積出現,如此可以證明加入該加速劑可使銅沉積在100秒內明顯產生,該加速劑確有助於提升銀觸媒化學鍍銅反應的反應速率,於工業應用上將有助於降低生產的時間成本。 It is known from Figures 13 to 16 that copper deposition started 20 seconds after the start of the reaction, and when the reaction proceeded to 100 seconds, the copper deposition was more pronounced, and the 17th to 18th images were not observed to have obvious copper. Deposition occurs, which proves that the addition of the accelerator can cause copper deposition to be apparent within 100 seconds. The accelerator does help to increase the reaction rate of the silver catalyst electroless copper plating reaction, which will help reduce production in industrial applications. Time cost.

綜上所述,本發明之用於銀觸媒鍍銅反應之化學鍍銅液係包含該銅離子源、該還原劑、該螯合劑及該加速劑,且該加速劑係為具有含氮雜環之化合物,使銀觸媒鍍銅反應的速率可以有效提升,以達到加速銀觸媒化學鍍銅反應之功效;另外,由於含有該加速劑的用於銀觸媒鍍銅反應之化學鍍銅液,可以維持銀觸媒化學鍍銅反應的速率,以避免反應過程中產生短路的情形,進而達到提升鍍膜品質的功效;再者,本發明之用於銀觸媒鍍銅反應之化學鍍銅液係可以縮短銀觸媒鍍銅反應之時間,進而達到節省銀觸媒化學鍍銅反應之能源及製程成本的功效。又,本發明另藉由該銅離子源、該還原劑、該螯合劑及該加速劑特定的添加濃度,係可以更進一步地節省反應所需的時間,進而達到降低生產之時間成本的功效。 In summary, the electroless copper plating solution for the silver catalyst copper plating reaction of the present invention comprises the copper ion source, the reducing agent, the chelating agent and the accelerator, and the accelerator has a nitrogen-containing impurity. The compound of the ring can effectively increase the rate of copper catalyst copper plating reaction to accelerate the electroless copper plating reaction of the silver catalyst; in addition, the electroless copper plating for the silver catalyst copper plating reaction containing the accelerator The liquid can maintain the rate of the electroless copper plating reaction of the silver catalyst to avoid the short circuit in the reaction process, thereby improving the coating quality; further, the electroless copper plating for the silver catalyst copper plating reaction of the present invention The liquid system can shorten the time of the copper catalyst copper plating reaction, thereby achieving the energy and process cost of saving the silver catalyst electroless copper plating reaction. Moreover, in the present invention, the specific concentration of the copper ion source, the reducing agent, the chelating agent and the accelerator can further save the time required for the reaction, thereby achieving the effect of reducing the time cost of production.

雖然本發明已利用上述較佳實施例揭示,然其並非用以限定本發明,任何熟習此技藝者在不脫離本發明之精神和範圍之內,相對上述實施例進行各種更動與修改仍屬本發明所保護之技術範疇,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the invention has been described in connection with the preferred embodiments described above, it is not intended to limit the scope of the invention. The technical scope of the invention is protected, and therefore the scope of the invention is defined by the scope of the appended claims.

Claims (3)

一種用於銀觸媒鍍銅反應之化學鍍銅液,係包含:一銅離子源,該銅離子源係用以提供銅離子,該銅離子源為硫酸銅、硝酸銅、氯化銅、碳酸銅、酒石酸銅、氫氧化銅或醋酸銅;一還原劑,該還原劑係用以將銅離子還原成金屬銅,該還原劑為甲醛、聚甲醛、次磷酸鈉、硼氫化鈉、硼氫化鉀、二甲基胺硼烷或葡萄糖;一螯合劑,該螯合劑係用以與銅離子進行螯合,該螯合劑為乙二胺四乙酸、氨二乙酸、氨三乙酸、N-羥乙基乙二胺三乙酸、酒石酸鉀鈉、葡萄糖酸鈉、三乙醇胺、甘油、四羥丙基乙二氨、羥基-(1,1)-亞乙基二磷酸或氨基三亞甲基磷酸;一加速劑,該加速劑係為具有含氮雜環之化合物,該加速劑為1,10-菲羅啉、聯吡啶、2,9-亞甲基-1,10-菲羅啉、三吡啶或4-羥基吡啶;及一溶劑,該溶劑係用以混合該銅離子源、該還原劑、該螯合劑及該加速劑,其中,該銅離子源之濃度為0.01~0.2M、該還原劑之濃度為0.05~0.2M、該螯合劑的濃度為0.05~0.2M及該加速劑之濃度為1×10-6~1×10-5M。 An electroless copper plating solution for silver catalyst copper plating reaction, comprising: a copper ion source for providing copper ions, the copper ion source is copper sulfate, copper nitrate, copper chloride, carbonic acid Copper, copper tartrate, copper hydroxide or copper acetate; a reducing agent for reducing copper ions to metallic copper, the reducing agent is formaldehyde, polyoxymethylene, sodium hypophosphite, sodium borohydride, potassium borohydride , dimethylamine borane or glucose; a chelating agent for chelation with copper ions, the chelating agent is ethylenediaminetetraacetic acid, ammonia diacetic acid, ammonia triacetic acid, N-hydroxyethyl Ethylenediaminetriacetic acid, sodium potassium tartrate, sodium gluconate, triethanolamine, glycerin, tetrahydroxypropylethylenediamine, hydroxy-(1,1)-ethylenediphosphate or aminotrimethylenephosphonic acid; an accelerator The accelerator is a compound having a nitrogen-containing heterocyclic ring, and the accelerator is 1,10-phenanthroline, bipyridine, 2,9-methylene-1,10-phenanthroline, tripyridine or 4- a hydroxypyridine; and a solvent for mixing the copper ion source, the reducing agent, the chelating agent, and the accelerator, The concentration of the copper ion source is 0.01 ~ 0.2M, the concentration of the reducing agent is 0.05 ~ 0.2M, the concentration of the chelating agent and the concentration of 0.05 ~ 0.2M of accelerator is 1 × 10 -6 ~ 1 × 10 -5 M. 如申請專利範圍第1項所述之用於銀觸媒鍍銅反應之化學鍍銅液,其中,該用於銀觸媒鍍銅反應之化學鍍銅液的pH值為11~13。 The electroless copper plating solution for the silver catalyst copper plating reaction according to the first aspect of the invention, wherein the electroless copper plating solution for the silver catalyst copper plating reaction has a pH of 11 to 13. 一種銀觸媒鍍銅之方法,係包含:備有一工作電極,該工作電極表面具有銀觸媒;及將該工作電極置入一用於銀觸媒鍍銅反應之化學鍍銅液中,進行化學電鍍,其中,該用於銀觸媒鍍銅反應之化學鍍銅液係包含一銅離子源、一還原劑、一螯合劑及一加速劑,該加速劑係為具有含氮雜環之化合物,其中,該銅離子源為硫酸銅、硝酸銅、氯化銅、碳酸銅、酒石酸銅、氫氧化銅或醋酸銅,該還原劑為甲醛、聚甲醛、次磷酸鈉、硼氫化鈉、硼 氫化鉀、二甲基胺硼烷或葡萄糖,該螯合劑為乙二胺四乙酸、氨二乙酸、氨三乙酸、N-羥乙基乙二胺三乙酸、酒石酸鉀鈉、葡萄糖酸鈉、三乙醇胺、甘油、四羥丙基乙二氨、羥基-(1,1)-亞乙基二磷酸或氨基三亞甲基磷酸,該加速劑為1,10-菲羅啉、聯吡啶、2,9-亞甲基-1,10-菲羅啉、三吡啶或4-羥基吡啶,該銅離子源之濃度為0.01~0.2M、該還原劑之濃度為0.05~0.2M、該螯合劑的濃度為0.05~0.2M及該加速劑之濃度為1×10-6~1×10-5M。 A silver catalyst copper plating method comprises: providing a working electrode having a silver catalyst on a surface thereof; and placing the working electrode in an electroless copper plating solution for a silver catalyst copper plating reaction Electroless plating, wherein the electroless copper plating solution for the silver catalyst copper plating reaction comprises a copper ion source, a reducing agent, a chelating agent and an accelerator, and the accelerator is a compound having a nitrogen-containing hetero ring. Wherein, the copper ion source is copper sulfate, copper nitrate, copper chloride, copper carbonate, copper tartrate, copper hydroxide or copper acetate, and the reducing agent is formaldehyde, polyoxymethylene, sodium hypophosphite, sodium borohydride, hydroboration Potassium, dimethylamine borane or glucose, the chelating agent is ethylenediaminetetraacetic acid, ammonia diacetic acid, ammonia triacetic acid, N-hydroxyethyl ethylenediamine triacetic acid, sodium potassium tartrate, sodium gluconate, triethanolamine , glycerol, tetrahydroxypropyl ethylene diamine, hydroxy-(1,1)-ethylene diphosphate or aminotrimethylene phosphate, the accelerator is 1,10-phenanthroline, bipyridine, 2,9- Methylene-1,10-phenanthroline, tripyridine or 4-hydroxypyridine, the concentration of the copper ion source is 0.01~ 0.2M, the concentration of the reducing agent is 0.05 to 0.2 M, the concentration of the chelating agent is 0.05 to 0.2 M, and the concentration of the accelerator is 1 × 10 -6 to 1 × 10 -5 M.
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