TWI529434B - Wafer level light guide element - Google Patents

Description

Wafer level edge light type light guiding element and manufacturing method thereof

The invention relates to a light guiding component of a natural light illumination system and a manufacturing method thereof, in particular to a wafer level side light type light guiding component fabricated by using a CMOS-MEMS process.

In the early buildings, due to poor indoor lighting, it was often necessary to turn on the lights during the day, which caused waste of electricity. However, current buildings usually use fixed lighting structures such as patios to improve indoor lighting problems. However, the use of patios for daylighting still does not allow sunlight to illuminate all corners of the room, and it also imposes restrictions on the structure of the building. Therefore, natural light guiding systems that introduce outdoor light into the room for illumination have received increasing attention.

Generally, the natural light guiding system includes a light collecting portion disposed outside, a light guiding portion, and a light emitting portion disposed inside the room. At present, the natural light guiding system on the market has various designs for the light collecting parts, but there is no design for the light emitting parts. Therefore, if the structure of the light-emitting portion can be improved and the illumination region is increased, the utilization of sunlight by the natural light guiding system can be effectively increased.

Therefore, the inventor has devoted himself to researching and coordinating the use of academics. The present invention is proposed to be reasonable in design and effective in improving the above problems.

The invention provides a wafer level side light type light guiding element and a manufacturing method thereof for improving a natural light guiding system, in particular, a light emitting part disposed indoors, for utilizing sunlight.

SUMMARY OF THE INVENTION A primary object of the present invention is to provide a method of fabricating a wafer level edge light type photoconductive element comprising the steps of: providing a microelectromechanical element comprising a ruthenium dioxide layer and a shape formed by a CMOS-MEMS process a metal layer in the ruthenium dioxide layer, the ruthenium dioxide layer and the metal layer are respectively exposed on a first end surface of the MEMS element, a second end surface corresponding to the first end surface, and a neighboring layer a first end surface and a side surface of the second end surface; wherein the metal layer exposed on the first end surface and the second end surface is U-shaped; etching the ruthenium dioxide layer in the metal layer to form a light guiding groove; Forming a light passing member in the light guiding groove, the light passing member is exposed on the first end surface, the second end surface and the side surface; respectively, a light guiding member is disposed on the first end surface and the second end surface; wherein the external light beam enters through the side surface The light member is reflected by the metal layer and concentrated by the first end surface and the second end surface.

Preferably, the method further comprises the steps of: etching the ruthenium dioxide layer outside the metal layer, and forming a light-transmissive package structure on the outer surface of the metal layer.

Preferably, the method further comprises the steps of: forming a light-transmissive package structure on the first end surface, the second end surface, the side surface and the other surface of the micro-electromechanical element, and the light-transmitting package structure may be glass.

Preferably, when etching the ceria layer inside the metal layer, it may be It is carried out by wet etching using hydrofluoric acid (HF).

Another object of the present invention is to provide a wafer level edge light type light guiding element comprising: a microelectromechanical element, a light guiding member and a light transmitting package structure. The microelectromechanical component is fabricated by a CMOS-MEMS process, and the microelectromechanical component comprises a germanium dioxide layer and a metal layer formed in the germanium dioxide layer, and the germanium dioxide layer and the metal layer are respectively exposed to the microelectromechanical component. a first end surface, a second end surface corresponding to the first end surface, and a side surface adjacent to the first end surface and the second end surface; wherein the metal layer exposed on the first end surface and the second end surface is U-shaped And the cerium oxide layer inside the metal layer has a light guiding groove; the light passing member is disposed in the light guiding groove; the two light guiding members are respectively disposed on the first end surface and the second end surface, and are connected to the light passing member; Wherein, the external light beam enters the light-passing member from the side surface, and is reflected by the metal layer, and is concentratedly emitted from the first end surface and the second end surface.

Preferably, the invention further comprises a light transmissive package structure covering the first end surface, the second end surface, the side surface of the microelectromechanical element and the other surface opposite to the side surface.

Preferably, the light transmissive package structure is glass.

The beneficial effects of the present invention may be that the wafer level side light type photoconductive element produced by the invention is small in size, and can be arranged according to the actual required mask range, has high adaptability, and is arranged through the array. The wafer level side light type light guiding element can be used to generate a surface light source; the wafer level side light type light guiding element is matched with a CMOS-MEMS process, so that it has the characteristics of low cost in mass production, and the volume is small, and It can effectively reduce the diameter of the fiber adjacent to it, thereby effectively reducing the optical loss rate, and effectively introducing the natural light guide introduced by the optical fiber. Get the position you need to effectively save energy. For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

1‧‧‧ wafer level edge light type light guide element

10‧‧‧Microelectromechanical components

101‧‧‧ first end face

102‧‧‧second end face

103‧‧‧ side surface

11‧‧‧metal layer

12, 13‧‧‧ cerium oxide layer

121‧‧‧Light guide

20‧‧‧Lighting parts

40‧‧‧Light guides

50‧‧‧End face light-transmissive package structure

51‧‧‧Side surface transparent package structure

1 is a flow chart of a method of fabricating a wafer level edge-lit light guide element of the present invention.

2 is a schematic view of a wafer level edge-lit light guide element of the present invention.

3 is a schematic view showing the optical path of the wafer level side light type light guiding element of the present invention.

4 is a schematic view of another embodiment of a wafer level edge light type light guiding device of the present invention.

The following is a specific example of a wafer level side light type light guiding element of the present invention and an embodiment thereof. Those skilled in the art can easily understand other advantages and effects of the present invention from the disclosure of the present specification. The present invention may be embodied or applied in various other specific embodiments, and various modifications and changes may be made without departing from the spirit and scope of the invention. Further, the illustrations of the present invention are merely for the sake of brevity, and are not depicted in actual dimensions, that is, the actual dimensions of the related structures are not reflected, which will be described first. The following embodiments are intended to describe the present invention in further detail, but are not intended to limit the scope of the invention.

1 to FIG. 3; FIG. 1 is a flow chart of fabricating a wafer level side light type photoconductive element according to the present invention; and FIGS. 2 and 3 are produced by the method for fabricating a wafer level side light type photoconductive element of the present invention. Wafer level edge light type light guiding element. As shown in FIGS. 1 and 2, the method of fabricating a wafer level side light type photoconductive element can include the following steps:

Step S1: providing a microelectromechanical component 10 by using a CMOS-MEMS process, the microelectromechanical component 10 comprising a germanium dioxide layer and a metal layer 11 formed in the germanium dioxide layer, the germanium dioxide layer and the metal layer 11 respectively a first end surface 101 exposed to the MEMS element, a second end surface 102 corresponding to the first end surface 101, and a side surface 103 adjacent to the first end surface 101 and the second end surface 102; wherein, the first surface 101 is exposed The metal layer 11 of the one end surface 101 and the second end surface 102 has a U shape.

Step S2: etching the ruthenium dioxide layer in the metal layer 11 to form a light guide groove 121. In practical applications, it may be performed by wet etching using hydrofluoric acid (HF); and the shape of the light guiding groove 121 may be designed according to actual needs, and is rectangular in the figure of the embodiment. For example, the actual application is not limited to this.

Step S3: A light-passing member 20 is formed on the light guiding groove 121, and the light-transmitting member 20 is exposed on the first end surface 101, the second end surface 102, and the side surface 103.

Step S4: A light guide 40 is disposed on the first end surface 101 and the second end surface 102, respectively. In a practical application, the light-transmitting member 20 and the light-guiding member 40 may be the same material. Alternatively, in other embodiments, the light-transmitting member 20 and the light guide member 40 may be simultaneously formed.

In another embodiment, step S5 may be further included: the first end surface 101, the second end surface 102, the side surface 103, and another relative to the side surface 103. The surface is formed with a side surface light-transmissive package structure 51; that is, the end surface light-transmissive package structure 50 will be wrapped around the micro-electromechanical element 10 provided with the light guide 40 and the light-passing member 20. The light transmissive package structure may be glass.

In another embodiment, in step S2, a portion of the ceria layer in the metal layer 11 and a ceria layer outside the metal layer 11 may be simultaneously etched; that is, the etched microelectromechanical device 10 from the outside to the inside, in sequence, the metal layer 11, the ruthenium dioxide layer and the light guide groove 121; and before the step S4 of forming the light guide member 40, it may precede the outer surface of the metal layer 11 (relative to the side surface) The other surface, that is, the lower surface of the metal layer 11 in the drawing, is formed with a light-transmissive package structure, and after step S4, an end-face light-transmissive package structure 50 is formed outside the light guide member 40 (as shown in FIG. 4). And forming a side surface transparent package structure 51 (shown in FIG. 4) on the side surface 103 of the microelectromechanical component 10, so that the light transmissive package structure will completely cover the light guides 40 disposed at both ends, and the light guide The slot 121 is provided with a microelectromechanical element 10 of the light-passing member 20.

Please refer to FIG. 2 and FIG. 3 together, which is a wafer level side light type light guiding element 1 fabricated according to the above process steps. As shown in FIGS. 2 and 3, the wafer level side light type light guiding element 1 has a microelectromechanical element 10, a light emitting member 20, and a light guiding member 40. The MEMS element 10 has a ruthenium dioxide layer and a metal layer 11 formed in the ruthenium dioxide layer, and the ruthenium dioxide layer and the metal layer 11 are respectively exposed on the two corresponding first end faces 101 of the MEMS element 10 and The second end surface 102, and the ruthenium dioxide layer and the metal layer 11 are exposed on the side surface 103 of the microelectromechanical element 10 adjacent to the first end surface 101 and the second end surface 102. The metal layer 11 is U-shaped and disposed in the cerium oxide layer, and the cerium oxide layer is separated into the inner cerium oxide layer 12 and the outer cerium oxide layer 13; and the inner cerium oxide layer 12 The light guide groove 121 is provided, and the light guide 20 is disposed in the light guide groove 121. The two light guiding members 40 are respectively disposed on the first end surface 101 and the second end surface 102, and are respectively connected to the surfaces of the light emitting member 20 exposed on the first end surface 101 and the second end surface 102.

Specifically, as shown in FIG. 3, the external light introduced by the optical fiber may enter the light-passing member 20 from the side surface 103 of the micro-electromechanical element 10 and pass through the guiding of the light-transmitting member 20 to the first end surface 101. The second end surface 102 is emitted and transmitted through the light guides 40 respectively disposed on the first end surface 101 and the second end surface 102 to achieve lateral illumination. In practical applications, the light-transmitting member 20 may be a material having a refractive index close to that of the optical fiber, and the winner may be the same material as the optical fiber. It is worth mentioning that after the external light enters from the side surface 103, part of the light will pass through the ruthenium dioxide layer 13 outside the light-passing member 20, and the light will be reflected by the metal layer 11 to be reflected back to the light-passing member 20. Or in the ruthenium dioxide layer 12, it can be effectively reduced, and the light is emitted outward, which may cause optical loss. In other words, after the external light enters the light-passing member 20 from the side surface 103, it is simultaneously guided by the light-passing member 20 and reflected by the metal layer 11, and is concentratedly guided to the first end surface 101 and the second end surface 102. The effect of low-loss side guide light can be achieved.

Please refer to FIG. 4 , which is another embodiment of the wafer level side light type light guiding element 1 of the present invention. The end light transmitting package structure 50 may be disposed on the outer side of each light guiding member 40 and disposed on the side surface 103 . There is a side surface light transmissive package structure 51. In another embodiment, the light transmissive package structure may be coated on the first end surface 101, the second end surface 102, the side surface 103, and the other surface of the microelectromechanical element.

The above description is only a preferred possible embodiment of the present invention, and is not a The scope of the invention is limited to the scope of the invention, and equivalent modifications of the invention are intended to be included within the scope of the invention.

1‧‧‧ wafer level edge light type light guide element

10‧‧‧Microelectromechanical components

101‧‧‧ first end face

102‧‧‧second end face

103‧‧‧ side surface

11‧‧‧metal layer

12, 13‧‧‧ cerium oxide layer

121‧‧‧Light guide

20‧‧‧Lighting parts

30‧‧‧ cerium oxide layer

40‧‧‧Light guides

Claims (10)

A method of fabricating a wafer level edge-lit light-guide element comprising the steps of: providing a microelectromechanical component using a CMOS-MEMS process, the microelectromechanical component comprising a germanium dioxide layer and a layer formed in the germanium dioxide layer a metal layer, the ruthenium dioxide layer and the metal layer are respectively exposed on a first end surface of the MEMS element, a second end surface corresponding to the first end surface, and a first end face and the first end face a side surface of the second end surface; wherein the metal layer exposed on the first end surface and the second end surface is U-shaped; etching the ruthenium dioxide layer in the metal layer to form a light guiding groove; forming a pass a light guide member is disposed on the first end surface, the second end surface, and the side surface; and a light guide member is disposed on the first end surface and the second end surface; wherein the external light beam is disposed The light-passing member enters the side surface and is reflected by the metal layer to be concentrated by the first end surface and the second end surface. The method of fabricating a wafer level edge-type light-guide element according to claim 1, further comprising the steps of: etching the ruthenium dioxide layer outside the metal layer, and forming a light-transmissive package structure on an outer surface of the metal layer. The method of fabricating a wafer level edge-light type light guiding element according to claim 1, further comprising the steps of: the first end surface, the second end surface, the side surface, and the side surface of the microelectromechanical element The other surface forms a light transmissive package structure. A method of fabricating a wafer level edge type light guide element according to claim 1, wherein The method includes the following steps: forming an end surface transparent package structure on the first end surface and the second end surface, and forming a side surface light transmissive package structure on the side surface. The method of fabricating a wafer level edge type light guide element according to any one of claims 2 to 4, wherein the light transmissive package structure is glass. A method of producing a wafer level edge type light guide element according to claim 5, wherein the etching of the ceria layer in the metal layer is performed by wet etching using hydrofluoric acid (HF). A wafer level microelectromechanical device comprising: a microelectromechanical device fabricated by a CMOS-MEMS process, the microelectromechanical device comprising a germanium dioxide layer and a metal layer formed in the germanium dioxide layer The ruthenium dioxide layer and the metal layer are respectively exposed on a first end surface of the MEMS element, a second end surface corresponding to the first end surface, and a second end surface adjacent to the first end surface and the second end surface a side surface; wherein the metal layer exposed on the first end surface and the second end surface is U-shaped, and the ceria layer inside the metal layer has a light guiding groove; and a light passing member is disposed In the light guiding groove; and two light guiding members respectively disposed on the first end surface and the second end surface and connected to the light emitting member; wherein an external light beam enters the light passing member from the side surface And being reflected by the metal layer, and concentratedly emitted outward from the first end surface and the second end surface. The wafer-level microelectromechanical component of claim 7, further comprising a light transmissive package structure covering the first end surface, the second end surface of the microelectromechanical component, a side surface and another surface opposite the side surface. The wafer level microelectromechanical component of claim 8, wherein the light transmissive package structure is glass. The wafer-level MEMS device of claim 7, further comprising a two-end transparent package structure and a one-side transparent package structure, wherein each of the end-face transparent package structures is disposed on each of the light guides, and the side A surface light transmissive package structure is disposed on the side surface of the microelectromechanical element.