TWI525367B - Structure of liquid crystal on silicon display panel and mehtod for manufacturing the same - Google Patents

Description

Silicon-based liquid crystal display panel and manufacturing method thereof

The present invention relates to a structure of a liquid crystal display panel and a method of fabricating the same, and more particularly to a germanium-based liquid crystal display panel and a method of fabricating the same.

The current projectors are mainly divided into liquid crystal display (LCD) projectors, digital optical processing (DLP) projectors, and liquid crystal on silicon (LCOS) projectors. LCOS technology combines the advantages and architecture of LCD and DLP technologies. That is to say, LCOS technology adopts the architecture of using LCD to control liquid crystal in LCD technology, so as to avoid the problem that the resolution improvement is not easy due to the micro-electromechanical process in DLP technology. At the same time, LCOS also uses the concept of lens reflection in DLP technology to avoid the aperture ratio of LCD. Therefore, the high resolution, high brightness and low cost of the LCOS projector make it the mainstream technology of the current projector.

The LCOS projector mainly projects light through the reflection of an LCOS panel, so the light reflectivity of the pixel region in the LCOS panel becomes very important. In the conventional LCOS projection technique, light is incident on the LCOS panel, and the light reflected by the pixel region and the non-pixel region is collected and projected together. However, the interference of the reflected light in the non-pixel area will cause the contrast of the image to decrease, which in turn affects the image projection capability of the LCOS projector.

In view of this, it is still necessary to improve the projection capability of the image of the LCOS projector by improving the 矽-based liquid crystal display panel and its manufacturing method.

The invention provides a germanium-based liquid crystal display panel to reduce the reflectivity of the non-pixel region and improve the projection capability of the germanium-based liquid crystal display panel.

The present invention provides a method of fabricating a germanium-based liquid crystal display panel to produce a germanium-based liquid crystal display panel having better projection capability.

In order to achieve the above advantages or other advantages, an embodiment of the present invention provides a method for fabricating a germanium-based liquid crystal display panel, comprising the steps of: first, providing a semiconductor substrate having a pixel region and a circuit region, wherein the circuit region is located in a pixel At least one first upper metal pattern and an anti-Reflection coating (ARC) structure thereon are formed around the region, and at least one second upper metal pattern is formed in the circuit region. A second anti-reflective structure above it. Then, the first anti-reflective structure is removed, and a dielectric layer is formed on the semiconductor substrate to cover the first upper metal pattern. Further, a passivation layer is formed on the dielectric layer. Thereafter, a portion of the protective layer and a portion of the dielectric layer thereunder and a portion of the second anti-reflective structure are removed to form an opening exposing a portion of the second upper metal pattern.

In an embodiment of the invention, the material of the first upper metal pattern is a light reflective metal material.

In an embodiment of the invention, the method for forming the first upper metal pattern, the second upper metal pattern, the first anti-reflective structure and the second anti-reflective structure comprises first forming a metal layer on the semiconductor substrate, followed by a metal layer Forming an anti-reflection layer thereon, and then patterning the metal layer and the anti-reflection layer to form the first upper metal pattern and the first anti-reflective structure in the pixel region, and forming a second upper metal layer in the circuit region Pattern and second anti-reflection structure.

In an embodiment of the invention, the second anti-reflective structure may be a single layer structure or a composite layer structure. For example, the material of the second anti-reflection structure is, for example, titanium nitride (TiN), titanium nitride/titanium (TiN/Ti), titanium nitride/titanium oxynitride (TiN/SiON), titanium nitride/titanium/ Niobium oxynitride (TiN/Ti/SiON) or cerium oxide/cerium oxynitride (SiO ₂ /SiON).

In an embodiment of the invention, the method for fabricating the bismuth-based liquid crystal display panel further includes forming at least one wire in the opening to be electrically connected to the second upper metal pattern.

The present invention further provides a germanium-based liquid crystal display panel comprising a semiconductor substrate, at least one first upper metal pattern, an anti-reflective structure, a dielectric layer, a protective layer, at least one second upper metal pattern, a transparent substrate and a liquid crystal layer. The semiconductor substrate has a pixel area and a circuit area, and the circuit area is located around the pixel area. The first upper metal pattern is disposed on the semiconductor substrate and located in the pixel region thereof, and the second upper metal pattern is disposed on the semiconductor substrate and located in the circuit region thereof. The anti-reflective structure is a first opening disposed on the second upper metal pattern and having a portion of the exposed second upper metal pattern. The dielectric layer is disposed on the semiconductor substrate to cover the first upper metal pattern and directly contacts the upper surface of the first upper metal pattern. The protective layer is disposed on the dielectric layer and has a second opening corresponding to the first opening. The transparent substrate is disposed above the semiconductor substrate, and the liquid crystal layer is disposed between the transparent substrate and the semiconductor substrate.

In an embodiment of the invention, the material of the first upper metal pattern is a light reflective metal material.

In an embodiment of the invention, the second anti-reflective structure may be a single layer structure or a composite layer structure. For example, the material of the second anti-reflection structure is, for example, titanium nitride (TiN), titanium nitride/titanium (TiN/Ti), titanium nitride/titanium oxynitride (TiN/SiON), titanium nitride/titanium/ Niobium oxynitride (TiN/Ti/SiON) or cerium oxide/cerium oxynitride (SiO ₂ /SiON).

In an embodiment of the invention, the 矽-based liquid crystal display panel further includes at least one wire disposed in the opening to be electrically connected to the second upper metal pattern.

The manufacturing method of the bismuth-based liquid crystal display panel of the present invention mainly comprises forming an anti-reflection structure over the first upper metal pattern of the circuit region to reduce the interference of the reflected light from the circuit region on the reflected light of the pixel region, thereby improving The contrast of the image and the relative projection capability of the 矽-based liquid crystal display panel are relatively improved.

The above and other objects, features and advantages of the present invention will become more <RTIgt;

1 is a schematic view of a germanium-based liquid crystal display panel according to an embodiment of the present invention. Referring to FIG. 1 , the NMOS-based liquid crystal display panel 100 of the present embodiment includes a semiconductor substrate 110 , at least one first upper metal pattern 120 (described in this embodiment as an example), an anti-reflection structure 130 , and a dielectric layer 140 . The protective layer 150, the at least one second upper metal pattern 120a, the transparent substrate 180, and the liquid crystal layer 190.

The transparent substrate 180 is disposed above the semiconductor substrate 110, and the liquid crystal layer 190 is disposed between the transparent substrate 180 and the semiconductor substrate 110. In detail, a common electrode 182 is formed on the transparent substrate 180, and the common electrode 182 is located between the transparent substrate 180 and the liquid crystal layer 190. The common electrode 182 may be a transparent conductive layer made of, for example, Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO). The transparent substrate 180 can be a glass substrate.

The semiconductor substrate 110 has a pixel region 112 and a circuit region 114, wherein the circuit region 114 is located around the pixel region 112. The first upper metal pattern 120 and the second upper metal pattern 120a are formed on the semiconductor substrate 110 by using the same metal layer. Further, on the semiconductor substrate 110, in addition to the first upper metal pattern 120 and the second upper metal pattern 120a, other semiconductor elements and interconnect structures (not shown) are formed on the semiconductor substrate 110. The upper metal pattern 120 and the second upper metal pattern 120a are the uppermost metal layers of the interconnect structure, which are electrically connected to the corresponding semiconductor elements through the other conductor layers of the interconnect structure. Specifically, a CMOS transistor for driving the NMOS-based liquid crystal display panel 100 is formed in the pixel region 112 of the semiconductor substrate 110, and the first upper metal pattern 120 is electrically connected to the CMOS transistor through the interconnect structure. . That is, these first upper metal patterns 120 are, for example, pixel electrodes of the NMOS-based liquid crystal display panel 100. The material of the first upper metal pattern 120 may be a light reflective metal material, such as aluminum (Al), but not limited thereto.

Further, the circuit area 114 of the semiconductor substrate 110 is, for example, a peripheral circuit (not shown) in which the NMOS-based liquid crystal display panel 100 has been formed. In this embodiment, the second upper metal pattern 120a is a part of the peripheral circuit. Specifically, the second upper metal pattern 120a is, for example, a pad formed in the same process as the first upper metal pattern 120, and can be used to electrically connect the circuit inside the semiconductor substrate 110 with other external circuits.

The anti-reflection structure 130 is disposed on the second upper metal pattern 120a and has a first opening 130a exposing a portion of the second upper metal pattern 120a. It is worth mentioning that the anti-reflection structure 130 of the embodiment may be a single layer structure, such as titanium nitride, or a composite layer structure, such as titanium nitride/titanium, titanium nitride/niobium oxynitride or hafnium dioxide. / Double layer structure of arsenic oxynitride or a three-layer structure of titanium nitride/titanium/niobium oxynitride.

The dielectric layer 140 is disposed on the semiconductor substrate 110 to cover the first upper metal pattern 120. Since the first upper metal pattern 120 is not formed with an anti-reflection structure, the dielectric layer 140 is directly connected to the first upper metal layer. The upper surface of the pattern 120 is in contact. In addition, the protective layer 150 is disposed on the dielectric layer 140 and has a second opening 152 corresponding to the first opening 130a. The protective layer 150 of the present embodiment is, for example, a composite layer in which an oxide layer and a nitride layer are stacked.

In particular, in this embodiment, the wire 170 may be disposed in the circuit region 114 of the semiconductor substrate 110 through the second opening 152 and the first opening 130a by wire bonding and the second upper metal pattern. 120a electrical connection. In this way, an external circuit (not shown) can be electrically connected to the wire 170, so that the external circuit can be electrically connected to the circuit on the semiconductor substrate 110 through the wire 170 and the second upper metal pattern 120a.

In the above embodiment, the anti-reflective structure 130 is mainly used to reduce the light reflectance of the second upper metal pattern 120a of the circuit region 114, so as to reduce the interference of the reflected light of the circuit region on the reflected light of the pixel region, thereby improving The imaging contrast of the NMOS-based liquid crystal display panel 100. In addition, among the materials of the anti-reflection structure 130 disclosed in the above embodiments, the anti-reflection effect of the three-layer structure of titanium nitride/titanium/niobium oxynitride is optimal. In detail, if the first upper metal pattern 120 and the second upper metal pattern 120a are made of aluminum, the second upper layer of the anti-reflective structure 130 is made of a three-layer structure of titanium nitride/titanium/niobium oxynitride. The reflectivity of the metal pattern 120a can be reduced by about 80% compared to the reflectance of the first upper metal pattern 120 that does not cover any anti-reflective structure.

The embodiment described below is a method of manufacturing the above-described fluorene-based liquid crystal display panel. 2A to 2H are respectively partial schematic views showing a manufacturing process of a germanium-based liquid crystal display panel according to an embodiment of the present invention.

Referring to FIGS. 2A-2B, a semiconductor substrate 200 is first provided having a pixel region 202 and a circuit region 204, and the circuit region 204 is located around the pixel region 202. Next, the metal layer 210 and the anti-reflection layer 220 are sequentially formed on the semiconductor substrate 200. Specifically, the metal layer 210 is, for example, an uppermost metal pattern of an interconnect structure (not shown) formed on the semiconductor substrate 200.

Referring to FIG. 2C, the metal layer 210 and the anti-reflective structure 220 are patterned to form a first upper metal pattern 212 and a first anti-reflective structure 222 in the pixel region 202, and form a first portion in the circuit region 204. The second upper metal pattern 214 and the second anti-reflective structure 224a. In this embodiment, the material of the first upper metal pattern 212 and the second upper metal pattern 214 may be a light reflective metal material such as aluminum. In addition, a semiconductor element (such as a CMOS transistor) is further formed on the semiconductor substrate 200, and the first upper metal pattern 212 and the second upper metal pattern 214 are electrically connected to the semiconductor element through other conductor layers of the interconnect structure. As mentioned above, it will not be described here.

Referring to FIGS. 2D to 2F, after the above-described patterning process, a first patterned mask layer 230 is formed to cover the second anti-reflective structure 224a, and the first anti-reflective structure 222 is removed. Then, the first patterned mask layer 230 is removed, and a dielectric layer 240 is formed on the semiconductor substrate 200 to cover the first upper metal pattern 212.

Then, referring to FIG. 2G, a protective layer 250 is formed on the dielectric layer 240. In the present embodiment, the protective layer 250 is, for example, a composite layer in which an oxide layer and a nitride layer are stacked. Next, a second patterned mask layer 260 is formed on the protective layer 250, and the second patterned mask layer 260 has an opening 262 that is over the second upper metal pattern 214 and exposes a portion of the protective layer 250.

Referring to FIG. 2G and FIG. 2H simultaneously, a portion of the protective layer 250 exposed by the opening 262 and the second anti-reflective structure 224a thereunder are removed to form an opening 264a to expose a portion of the second upper metal pattern 214. The second patterned mask layer 260 is then removed. The material of the second anti-reflective structure 224a is the same as or similar to that of the anti-reflective structure 130 of the foregoing embodiment, and details are not described herein again.

Referring to FIG. 2I, after the opening 264a is formed, the wire 270 may be formed, and the wire 270 is electrically connected to the second upper metal pattern 214 through the opening 264a by wire bonding. Then, a liquid crystal layer and a transparent substrate are formed on the protective layer 250, and a germanium-based liquid crystal display panel similar to that of FIG. 1 can be completed.

In summary, the NMOS-based liquid crystal display panel of the present invention mainly forms an anti-reflection structure over the second upper metal pattern of the circuit region to reduce the interference of the reflected light from the circuit region on the reflected light of the pixel region. In turn, the contrast of the image is improved, and the projection capability of the 矽-based liquid crystal display panel is relatively improved. In addition, the effect of reducing the reflectance can be further improved by the selection of the material of the anti-reflection structure or the anti-reflection structure.

While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

100. . . Silicon-based liquid crystal display panel

110, 200. . . Semiconductor substrate

112, 202. . . Graphic area

114, 204. . . Circuit area

120, 212. . . First upper metal pattern

120a, 214. . . Second upper metal pattern

130. . . Anti-reflection structure

130a. . . First opening

140, 240. . . Dielectric layer

150, 250. . . The protective layer

152. . . Second opening

170. . . wire

180. . . Transparent substrate

182. . . Common electrode

190. . . Liquid crystal layer

210. . . Metal layer

220. . . Antireflection layer

222. . . First anti-reflection structure

224a. . . Second anti-reflection structure

230. . . First patterned mask layer

260. . . Second patterned mask layer

262, 264a. . . Opening

270. . . wire

1 is a schematic view of a germanium-based liquid crystal display panel according to an embodiment of the present invention.

2A to 2I are respectively schematic diagrams showing a manufacturing process of a germanium-based liquid crystal display panel according to an embodiment of the present invention.

100. . . Silicon-based liquid crystal display panel

110. . . Semiconductor substrate

112. . . Graphic area

114. . . Circuit area

120. . . First upper metal pattern

120a. . . Second upper metal pattern

130. . . Anti-reflection structure

130a. . . First opening

140. . . Dielectric layer

150. . . The protective layer

152. . . Second opening

170. . . wire

180. . . Transparent substrate

182. . . Common electrode

190. . . Liquid crystal layer

Claims (12)

A method for fabricating a germanium-based liquid crystal display panel, comprising: providing a semiconductor substrate having a pixel region and a circuit region, wherein the circuit region is located around the pixel region, and at least a pixel region is formed in the pixel region a first upper metal pattern and a first anti-reflective structure thereon, wherein at least one second upper metal pattern and a second anti-reflective structure thereon are formed in the circuit region; the first anti-reflective structure is removed; Forming a dielectric layer over the semiconductor substrate to cover the first upper metal pattern and the second anti-reflective structure; forming a protective layer on the dielectric layer; and removing a portion of the protective layer and a portion thereof The second anti-reflective structure forms an opening to expose the portion of the second upper metal pattern. The method for manufacturing a bismuth-based liquid crystal display panel according to claim 1, wherein the material of the first upper metal pattern is a light reflective metal material. The method for manufacturing a bismuth-based liquid crystal display panel according to claim 1, wherein the first upper metal pattern, the second upper metal pattern, the first anti-reflective structure, and the second anti-reflective structure are formed The method comprises: forming a metal layer on the semiconductor substrate; forming an anti-reflection layer on the metal layer; and patterning the metal layer and the anti-reflection layer to form the first upper metal pattern in the pixel region The first anti-reflective structure forms the second upper metal pattern and the second anti-reflective structure in the circuit region. The method for manufacturing a bismuth-based liquid crystal display panel according to claim 1, wherein the second anti-reflective structure is a single layer structure or a composite layer structure. The method for manufacturing a bismuth-based liquid crystal display panel according to claim 4, wherein the second anti-reflective structure is made of titanium nitride, titanium nitride/titanium, titanium nitride/niobium oxynitride, titanium nitride. / Titanium / bismuth oxynitride or cerium oxide / bismuth oxynitride. The method for manufacturing a bismuth-based liquid crystal display panel according to claim 1, further comprising forming at least one wire and passing the opening to electrically connect with the second upper metal pattern. A bismuth-based liquid crystal display panel includes: a semiconductor substrate having a pixel region and a circuit region, the circuit region being located around the pixel region; at least a first upper metal pattern disposed on the semiconductor substrate And a second upper metal pattern disposed on the semiconductor substrate and located in the circuit region; an anti-reflective structure disposed on the second upper metal pattern, and the anti-reflection structure Having a first opening exposing a portion of the second upper metal pattern; a dielectric layer disposed on the semiconductor substrate to cover the first upper metal pattern and the upper surface of the anti-reflective structure, and directly contacting the surface a top surface of the first upper metal pattern; and a protective layer disposed on the dielectric layer, and the protective layer has a second opening corresponding to the first opening. The 矽-based liquid crystal display panel of claim 7, further comprising: a transparent substrate disposed above the semiconductor substrate; and a liquid crystal layer disposed between the transparent substrate and the semiconductor substrate. The bismuth-based liquid crystal display panel of claim 7, wherein the material of the first upper metal pattern is a light reflective metal material. The fluorene-based liquid crystal display panel of claim 7, wherein the anti-reflection structure is a single layer structure or a composite layer structure. The bismuth-based liquid crystal display panel according to claim 9, wherein the anti-reflective structure is made of titanium nitride, titanium nitride/titanium, titanium nitride/niobium oxynitride, titanium nitride/titanium/nitrogen oxide. Bismuth or cerium oxide / cerium oxynitride. The 矽-based liquid crystal display panel of claim 7, further comprising at least one wire electrically connected to the second upper metal pattern through the first opening and the second opening.