TWI519289B - Flexible artificial retina devices - Google Patents

Description

Flexible artificial retinal device

The present invention relates generally to a microstructure, and more particularly to a flexible integrated circuit component that stimulates nerve cells.

Age-related macular degeneration (AMD) and Retinitis Pigmentosa (RP) are the main causes of blindness in the world, especially for the elderly. Artificial retinal devices provide a possibility for eye blindness to repair part of the vision. In general, this component contains microelectrodes and requires the separation of the microwires implanted by the wires to control each microelectrode. However, the range of vision provided by the component is determined by the number of microelectrodes and the pitch of the microelectrodes contained within the component, and thus may limit the range of vision due to the limited size of the connector implantation. .

Furthermore, the image resolution of an artificial retina device may be related to the microelectrode density within the component. Conventional artificial retinal devices may include a driver circuit wafer that is separate from the electrodes or an image sensing wafer that is implanted with retinal tissue. Therefore, the number of electronic interconnections required between the microelectrode wafer and the driver circuit wafer is greatly increased, and an unnecessary limit is also increased in the number of achievable pixels.

In addition, existing artificial retinal devices may be microelectrodes made of planar wafers that do not conform to non-planar shaped retinal tissue. Due to the mismatch in shape, additional interference between the microelectrodes may result, which in turn limits the image resolution of the component.

Accordingly, conventional artificial retinal devices inherently limit the degree of image resolution, range of vision, or other state of vision that is close to the true retina that is used to help the patient recover from visual performance recovery.

In one embodiment, the flexible integration element provides electrical stimulation (eg, downwards) over a retinal region that is at least a millimeter to a few millimeters, and relative to several equal to tens of grades of artificial retinal visual fields. High resolution of individual retinal cells). The flexible integration element can be adjusted and calibrated to modulate the stimulation of the target retinal nerve. In an embodiment, an epi-retina (eg, from the front of the retina facing the incident light or on the retina) or a sub-retinal (eg, behind the retina) may be used to implant Flexible integrated components.

In another embodiment, a single flexible CMOS wafer can be integrated into a pixel cell array. Each pixel unit includes a microelectrode, a light sensing element, a single processor, and a driver circuit. The flexible wafer can be made thin to conform to the shape of the retina. For example, a flexible wafer having a radius of about 3 mm may be bent from the center of the wafer to the edge of the wafer to about 90 microns to form a two-dimensional ball-shaped curved surface similar to a contact lens.

In another embodiment, the flexible integration element includes sub-modules that are separated by a boundary zone. In addition to certain wires (such as metal wires), the material between the lower modules is removed from the boundary to increase the moldability of the components (e.g., flexibility to conform to different shapes). In some embodiments, the flexible integration element can be perforated (eg, with perforations) to allow certain fluids to flow through the element. Alternatively, or alternatively, the flexible integrated component can comprise a thin substrate such that a portion of the light can pass through the wafer and thereby enter the integrated light sensing element and can be used in the artificial retina.

In another embodiment, the flexible integration element can include an electrode that mates with the zone loop (or guard ring) to limit and shorten the total current distance from the electrode. Therefore, the amount of power loss at the time of transmitting current can be reduced to prevent unwanted nerve cells farther from the target nerve cells, such as stimulation of bipolar cells or ganglion cells in the lower retina. The electrode surface may be arranged to have a three-dimensional orientation of a plurality of electrode heights based on the element substrate to differentially stimulate different layers of nerve cells, such as the stratum of ON and OFF cells.

In another embodiment, the flexible integration component can include an in-wafer signal processing circuit that can generate a suitable stimulus waveform for the pixel unit, and is input from a plurality of pixel units, such as adjacent pixel units. The flexible integrated component can include an electronic sensing circuit that transmits each pixel from an acceptable field and firing patterns from a target neural cell (eg, near a pixel unit) Unit of target nerve cells.

In another embodiment, the provision system includes an integrated retina wafer for implantation as a manual mesh mold to the user, and which can fine tune the wafer through external commands. For example, in terms of external instructions, and depending on the user's visual awareness, each pixel unit in the wafer may include a particular receiving end and/or circuitry for receiving light and/or wirelessly transmitting signals to select and / or assemble part of the wafer. The provisioning system can include remote controls to issue external commands selectively or wirelessly.

In another embodiment, an implant device includes: a plurality of light sensing elements for receiving a light; a plurality of microelectrodes, and a circuit coupled to the plurality of light sensing elements and the plurality of microelectrodes, The circuit drives the plurality of microelectrodes to impart a stimulus to the neural cells to sense an image of the light captured by the plurality of light sensing elements, wherein the implant device is deployed in a flexible material to conform to a human The shape of the eyeball, and allowing the plurality of microelectrodes to be in close proximity to the nerve cell.

In another embodiment, an apparatus implantable into a tissue comprising a plurality of neural cells, comprising: a plurality of pixel units disposed in a two-dimensional array to sense entry into the plurality of pixel units An image of a light, each pixel unit comprising: a light sensing element for receiving the light; a microelectrode transmitting a stimulus to the target nerve cell of the plurality of nerve cells for sensing; and a circuit that takes the stimulus from the light and drives the microelectrode, wherein the two-dimensional array is disposed in a semiconductor device having a front surface and a back surface relative to the front surface; and a biological a compatible layer that packages the semiconductor device to protect the semiconductor device and the tissue in both directions, the biocompatible layer having an opening to allow the plurality of microelectrodes of the plurality of pixel units to stimulate the nerve cell, wherein the semiconductor device A flexible material is included to allow the semiconductor device to bend in a two-dimensional direction to conform to the shape of a human eye, and wherein the flexible material is translucent to enable the semiconductor device to receive from the semiconductor device The light of the front surface or the back surface.

In another embodiment, an integrated circuit device for an artificial retina includes: an array of pixel units to sense an image of a light, each pixel unit comprising: a light sensing element for sensing a light electrode; a microelectrode that transmits a target nerve cell stimulated to the plurality of nerve cells for sensing; and a circuit that takes the stimulus from the light and drives the microelectrode, wherein the pixel unit array The density is configured to be greater than 250 per square millimeter, and wherein the semiconductor device is bendable to allow the pixel unit array to be deformed to have a radius of curvature of at least 12.5 millimeters depending on a shape of a human eye.

Other features and figures of the present invention will be disclosed in detail in the following description.

100A, 100B‧‧‧ components

101, 111‧‧‧Light sensing elements

103‧‧‧electrode

105‧‧‧Processing circuit

113‧‧‧Electrode

107, 109‧‧‧ pixel unit

115‧‧‧ Circuitry

200A‧‧‧ distribution diagram

203‧‧‧ wafer

201‧‧‧ retina

200B‧‧‧Relationship

205‧‧‧ curvature

300‧‧‧ components

301‧‧‧Module

303‧‧‧ border

400A, 400B‧‧‧ section

401‧‧‧ Polymer

403‧‧‧Optoelectronics

405‧‧‧Light sensor

407‧‧‧矽

409‧‧‧Oxidized metal interconnect layer

411‧‧‧Aluminium

413‧‧‧electrode

433‧‧‧Perforation

417, 419, 421, 425‧‧ ‧ pixel units

423‧‧‧Metal wire

500A~500J‧‧‧ structure

501‧‧‧矽 substrate

503‧‧‧矽

505‧‧‧Optoelectronics

507‧‧‧Light sensor

509‧‧‧Oxidation/metal layer

511‧‧‧Aluminium

513, 515, 517, 519‧‧ ‧ pixel units

521‧‧‧electrode

523‧‧‧Biocompatible Polymers (I)

525‧‧‧Barrier layer

527‧‧‧Barrier layer

531‧‧‧ dividing road

529‧‧‧Biocompatible polymer layer (II)

533‧‧‧Transporting substrate (II)

537‧‧‧ front side

534‧‧‧Dielectric layer

535‧‧‧ Back side

539‧‧‧Protective layer

541‧‧‧Oxide layer

543‧‧‧Transporting substrate (I)

555‧‧‧ Seal

545‧‧ ‧ glue

510A~510F‧‧‧ structure

5101‧‧‧Protective layer

5103‧‧‧Metal

5105‧‧‧Oxidation/metal layer

5107‧‧‧Active layer

5109‧‧‧electrode

5111, 5119‧‧‧ barrier layer

5115‧‧‧electrode conductive layer

5113, 5121‧‧‧Biocompatible polymer

5117‧‧‧Adhesive layer

5123‧‧‧Optoelectronics

5125‧‧‧Light sensing element

5127‧‧‧ trench

5129‧‧‧矽 substrate

5131‧‧‧Oxide layer

5133‧‧‧ Carrier Wafer

600A~600D‧‧‧ components

601‧‧‧Biocompatible polymer layer

603, 629‧‧ ‧ layers

605‧‧‧Optoelectronic/sensing components

607, 633‧‧‧Light sensing elements

609‧‧‧Oxide layer

613, 639‧‧‧Aluminium

615, 637‧‧‧ electrodes

619‧‧‧Perforation

623, 647, 649, 653 ‧ ‧ rays

625, 651‧‧‧ bipolar cells

627‧‧‧Oxidation and metal interconnect layer

631‧‧‧Crystal circuit

635‧‧‧Barrier layer

641‧‧‧Perforation

643‧‧‧ tissue glue

700A~700B‧‧‧ components

705‧‧‧Block/adhesive

701, 703‧‧‧Biocompatible polymers (I), (II)

707‧‧‧矽

709‧‧‧Crystal circuit

711‧‧‧Light sensor

713‧‧‧ Guards

715‧‧‧electrode

717‧‧‧Aluminium

719‧‧‧Oxide layer

721‧‧‧ Organization

723‧‧‧ Current

725‧‧‧ dielectric layer

727‧‧‧ electric field

800‧‧‧ components

801‧‧‧ nerve cells

803‧‧‧electrode

807‧‧‧Metal/dielectric layer

809‧‧‧Active components

811‧‧‧Polymer and barrier layer

813‧‧‧ polymer barrier layer

900‧‧‧ components

901, 915‧‧‧ nerve cells

903, 917‧‧‧ electrodes

909‧‧‧Active components

911‧‧‧Polymer and barrier layer

913‧‧‧ polymer barrier layer

1000A‧‧‧ components

1001, 1003, 1005, 1007, 1009‧‧‧ pixel units

1000B‧‧‧ Circuit

1011, 1013‧‧‧ weight setting

1015‧‧‧Processing components

1017‧‧‧ Output signal

1019‧‧‧ Input signal

1101‧‧‧Processing circuit

1103‧‧‧Microelectrode connection array

1105‧‧‧Retinal ganglion cells

1107‧‧‧Neural Cell Network

1109‧‧‧ light receiving cells

1111‧‧‧Incoming light I(xi,yi)

1115‧‧‧Sensing output signal O(pi,qi)

1123‧‧‧ light acceptance

1133‧‧‧ components

1135‧‧‧Processing features H(pi,qj,xi,yi)

1200‧‧‧ system

1201‧‧‧Remote control components

1203‧‧‧External instructions

1207‧‧‧User Control Interface

1209‧‧‧Optical input

1300‧‧‧ method

1301~1307‧‧‧Steps

1A-1B is a block diagram of an integrated flexible element for an artificial retina in an embodiment of the present invention.

2A-2B is a schematic view showing a relationship table of curved flexible members in an embodiment of the present invention.

Figure 3 is a schematic illustration of an element having perforations in one embodiment of the invention.

4A-4B are schematic cross-sectional views of a flexible member in accordance with an embodiment of the present invention.

5A-5J are schematic views showing the flow of manufacturing a flexible member in an embodiment of the present invention.

5.1A-5.1F is a cross-sectional view showing another structure of a flexible member in an embodiment of the present invention.

6A-6D is a schematic cross-sectional flow diagram of a laminated structure of flexible elements implanted into an artificial retina by different methods.

7A-7B are cross-sectional views showing a guard ring for providing an adjacent loop and limiting current in an embodiment of the present invention.

Figure 8 is a schematic cross-sectional view showing a laminated structure in which a flexible member has protruding electrodes in an embodiment of the present invention.

Figure 9 is a schematic cross-sectional view showing a laminated structure in which a flexible member has a multi-step electrode height in an embodiment of the present invention.

10A-10B are block diagrams of signal processing circuits in a flexible component in accordance with an embodiment of the present invention.

11A-11B are schematic views showing the operation of the flexible member in one embodiment of the present invention.

Figure 12 is a block diagram showing the system of a flexible member in one embodiment of the present invention.

Figure 13 is a flow chart depicting a method of assembling a flexible component in accordance with one embodiment of the present invention.

The present invention is a flexible artificial retina device, and the following description will be described in detail. In the following description, the specific details are set forth to provide an explanation of an embodiment of the invention. However, it will be apparent that those skilled in the art can implement the present invention without these specific details. An embodiment of the invention. In other instances, well-known components, structures, and techniques are not described in detail herein in order not to obscure the understanding of the description.

The word "one embodiment" or "an embodiment" as used in the specification refers to a specific feature, structure or feature associated with the description of the embodiment included in at least one embodiment of the invention. The various appearances of the name "in an embodiment" are not specifically referring to the same embodiment.

A flexible IC (integrated circuit) component can integrate a pixel array. Each pixel may comprise an electrode, a sensing element (eg, a light sensing element, an electrical sensing element, or other applicable sensing element), a single processor, and/or a drive circuit. This integration can simplify wire bonding, fan out or multiplexing or other needs to accomplish the components with the required functionality. In this way, signal transmission between the sensing element/processing circuit and the electrode array at high cost, for example by electromagnetic waves (EM), can be eliminated. Each pixel can be connected to the element, causing thousands or thousands of pixels in the element to connect to the nerve cells. For example, the flexible integrated component can provide the desired density to restore 20/80 visual acuity to a high density array that is about two to four millimeters in size and has 10,000 to 20,000 pixel units.

In an embodiment, the flexibility of the integrated component is determined by the controlled thickness of the component. For example, the element can be as thin as can be bent from center to edge to 90 microns to conform to the shape of the retina (eg, the human eye). In one embodiment, a very thin component can be made (eg, according to a process method) that is thin enough to bend to a curvature radius of less than 12 mm, which is about the average curvature radius of the human retina, and still at the component material strength. The safety limit.

When the element is bendable and conforms to the retinal curvature, the neuron-to-electrode distance between the element electrode and the target nerve cell of the retina is reduced. Therefore, it is possible to reduce the power required for activating or stimulating each pixel of the nerve cell to produce a higher pixel density with a supplyable power density, and at the same time, to improve the nerve fineness of the patient through the implanted component. The image resolution received by the cell. In a particular embodiment, the component will meet the conditions for stimulating the need for individual retinal nerves (eg, each electrode, one of the other neuronal cells).

In one embodiment, the flexible integrated circuit (or component) for the artificial retina can be fabricated using 180 nanometer CMOS technology in two biocompatible polymer layers and barrier layers (eg, polyimide/Sic, A layer of tantalum elements having a thickness of less than 30 microns is interposed between parylene/SiC. Biocompatible polymer layers (such as polyimide, parylene, liquid crystal polymer, etc.) and barrier layers (such as SiC, TiN, diamond-like carbon (DLC) or diamond layer) can be compared with ISO 10993 The content (eg, biocompatible), thus providing bidirectional protection (eg, prolonged contact) between the flexible integrated element and the surrounding tissue as the component is implanted into the tissue.

The flexible integrated component can be fabricated by integrating high-density CMOS image sensing components with signal processing circuitry, as well as neural analog electrode arrays that are the same flexible patches that require medical implantation. In some embodiments, a semiconductor substrate can be used in the component to allow for the content of optical and/or electronic components to function as an optical image and to generate an electronic analog image.

In another embodiment, the flexible integration element can be applied to different methods of retinal implantation. For example, a very thin component can be made to allow a specific portion of the light to enter the component. The sensing element and the electrode may be on the opposite side (or opposite surface) or the same side of the translucent element. Therefore, the element can be implanted by the epi-retina method, so that retinal ganglion cells (RGC) can be directly transmitted through the electrodes of the element without using the retinal neural network. Alternatively, a sub-retinal method can be used to implant the element so as to penetrate the electrode and stimulate the retina from the bipolar cell surface, for example, together with the remaining neural network formed by various nerve cells. The above neural cells are, for example, bipolar cells, horizontal cells, and amacrine cells.

In one embodiment, the flexible integration element can evoke target nerve cells or nerves based on characteristics of nerve cells that are responsive to light stimulation. For example, this feature means that the target nerve cell is an ON type cell, an OFF type cell, or another type of cell. The ON-type cells essentially react to the onset of light stimuli at the same time, and the OFF-type cells essentially react to the offset of the light sitmuli at the same time. The flexible integrated component can include a processing capability such that the stimulus can be generated from the received light, suitably as well as through a particular active pattern (or waveform), time delay, ignition, compression, or Other available stimulation methods, etc., stimulate the target nerve cells (for example, if the received light is used directly to stimulate the nerve cells). In one embodiment, the flexible integration element can comprise a plurality of electrode layers (eg, distributed in three dimensions) that allow physical selection of different layers of nerve cells (eg, due to stratified connective nerves) (eg, based on adjacent locations) to communicate (or irritating). For example, each electrode or microelectrode can be placed in a small amount (eg, limited to less than a predetermined amount, such as 4, 8, or other available quantities) without affecting other unselected nerve cells. ).

Flexible integrated components can provide customized functionality for different retinal implant requirements. For example, based on the visual perception state received by the actual patient, the operation can be manually and/or automatically calibrated in vitro to resolve the type of target neural cell and/or to adjust the sensing element/electrode array parameters of the element. The ongoing functions can be activated or programmed (eg, through a programmable circuit) to provide the same signal processing efficiency, such as replacing the injured neural cell network, thereby improving the repair vision received by the patient.

1A-1B is a block diagram of an integrated flexible element for an artificial retina in an embodiment of the present invention. As shown in Figures 1A-1B, element 100A includes a pixel unit of a two-directional array. Each pixel unit contains a similar structure. For example, the pixel unit 107 includes a light sensing element 101 for receiving incident light, a processing circuit 105 that performs an operation, and an electrode 103 for visually sensing the target nerve cells and projecting the incident light. In an embodiment, the processing circuit 105 includes digits, analogs, or other circuitry available to process light sensed from light sensing element 101, thereby generating stimuli or waveforms, activation patterns, etc., to drive electrode 103 and thereby stimulate target neural cells.

Alternatively, as shown in FIG. 1B, the element 100B includes a pixel unit 109, and the pixel unit 109 has a light sensing element 111, an electrode 113, and a circuit 115. The electrode 113 is engaged with the target nerve cell to deliver a stimulus from the labeled neural cell and/or to sense an electronic activity. This stimulus is derived from the light captured by the light sensing element 111. In one embodiment, circuit 115 provides processing (e.g., signal processing) functionality for receiving, processing, and/or driving electronic signals. For example, an electronic signal can be received by the light sensed from the light sensing element 111 or the electric field sensed from the electrode 13. When the electronic signal passes through the electrode 113, the circuit 115 can drive the stimulus.

In the artificial retina wafer element 100B, in chronological order, the combination of the electronic sensing circuit 115 can pass through the sensed receivable field (such as an electric field) and nerve spiking patterns, so that the nerve cells can be automatically recognized or Manual identification. For example, in open (ON) and OFF (OFF) ganglion cells of a functionally asymmetric primary retina, the acceptable field of ON cells is 20% more than OFF cells, resulting in higher full field sensitivity (full -field sensitivity), and ON cells have about ~20% faster response kinetics than OFF cells. A large array of microelectrodes that conform to the retina and are capable of sensing and stimulating cell size can selectively stimulate or inhibit ON and OFF retinal ganglion cells.

2A-2B is a schematic view showing a relationship table of curved flexible members in an embodiment of the present invention. In general, the image resolution of an artificial retina device and the required oscillating circuit (eg, critical current density) are determined by the curvature of the component. In an embodiment, the flexible integration element of the artificial retina may comprise an array of electrodes, such as cell-pitched, fabricated by planar IC lithography (eg, each electrode is approximately the size of a single nerve cell) . Figure 2A is based on the curvature of the human eyeball, usually slightly spherical with an average radius of 25 mm, implanted and viewed Membrane-contacted millimeter planar electrode array wafer with a distribution of neuro-to-electrode distances 200A.

As shown in the profile 200A, the millimeter-sized planar electrode array wafer 203 contacts the retina 201 at the center point of the wafer 203, and can be rapidly separated from the retina by a distance of about 90 microns, and the distance from the center point to the edge of the wafer 203 is 1.5 mm. An increase in the distance of the nerve electrode is inevitable, such as increasing the critical current of the desired electrode to depolarize the target nerve. Figure 2B is a plot of the critical current for a 30 mV drop across a 10 micron cell versus separation distance. As shown in the relationship table 200B in FIG. 2B, according to the curvature 205, the increase in the required critical current is greater in intensity than the adjacent ones by two orders. In addition, since the field lines from the electrodes and the current (for example, the sent stimulus signal) may spread over a distance and cover a large area, thereby reaching the distance nerve, the increase in the distance of the nerve electrode reduces the resolution. Depolarize specific nerves. In one embodiment, the flexible integrated component of the present invention can be implanted without the need for large distance or separate implantation, as shown in Figures 2A and 2B.

Figure 3 is a schematic illustration of an element having perforations in one embodiment of the invention. Element 300 can be multi-directionally flexible to facilitate bending to have a curvature of at least an average human eye (e.g., a radius of 25 mm). In one embodiment, component 300 can include a plurality of hexagonal package modules, and the boundary between adjacent two hexagonal package modules is defined by the vias.

Each module, such as module 301, includes a group of pixel units in the component separation area. The separation zone can be a hexagonal shape, a quadrilateral shape, or other suitable shape. In an embodiment, the perforations allow fluid to be exchanged at different surfaces of element 300. The boundary between adjacent modules, for example, as a boundary 303 directly connected to other modules, which is a metal trace (or other wire layer or wire) of a signal line that connects adjacent modules. ). The metal circuit layer provides power distribution between the modules. Perforation is for some fluids to pass through the perforations between the two sides of the meta (eg Such as the implantation between tissues) flow. Between the polymer and the barrier layer, in addition to the metal lines along the boundary, the removal of the integrated circuit material can increase the formability of the component.

4A-4B are schematic cross-sectional views showing a flexible member in accordance with an embodiment of the present invention. The section 400A of FIG. 4A is a flexible integrated component including a plurality of pixel units 417, 419, 421, 425, wherein the pixel unit is a multilayer structure such as a germanium layer 407, an oxide metal interconnect layer 409 or Polymer and barrier layer. The unit 417 includes a transistor 403, a photosensitive element 405 in the germanium layer 407, and an electrode 413 that is coupled to the circuit (eg, including the transistor 403) via aluminum 411. The perforations 433 can be formed through the elements and along the boundaries between adjacent modules. For example, the units 417, 419 are considered as a group in the module, and the separated modules of the group and the adjacent another containing unit 421, 425 are spaced apart by the through holes 433.

The section 400B refers to an area between adjacent modules (or pixel units) in the flexible integrated component, having a surface that straddles the boundary of the module without having to cut through the perforations. Passivated metal lines or other flexible wires, such as metal wires 423, pass through the boundary (eg, between the perforations) to transmit electronic signals between the cells.

5A-5J are schematic views showing the flow of a flexible member in an embodiment of the present invention. In one embodiment, standard or fine-tuned CMOS technology or CMOS image sensing (CIS) techniques can be used on the germanium wafer to integrate the CMOS and the light sensing elements and electrode arrays in structure 500A in FIG. 5A. Preferably, the germanium wafer may comprise a Silicon On Insulator (SO1) wafer having a germanium epitaxial layer a few microns thick. The PN junction diode can be used as a light sensing element through improved CMOS technology. Alternatively, a light sensing element having an appropriate doping profile and an anti-reflective coating layer can also be fabricated by CIS technology. In a particular embodiment, a CMOS compatible conductive film such as TiN is deposited on the top surface of the electrode layer (e.g., aluminum 511) prior to patterning the electrodes. The electrodes are exposed during the back pad opening step of a conventional CMOS process.

In one implementation, the structure 500A in FIG. 5A includes a laminated structure of flexible integrated components, wherein the flexible integrated component has a transistor 505, a photosensitive element 507, and an aluminum 511 of the pixel unit 513, and It is disposed on the germanium layer (or semiconductor layer) 503, the oxide/metal layer 509, the germanium substrate 501, and the selective oxide layer 541. The structure 500A may include pixel units 515, 517, 519 having the same composition as the pixel unit 513. The structure 500A has a front side (or front surface, transistor side) 537 and a back side 535 opposite the front side. Structure 500A can include a protective layer 539 for example, for example, a CMOS process. The front side 537 corresponds to the wafer surface of the wafer or wafer.

Next, as shown in FIG. 5B, the front surface based on, for example, SiC, diamond, or DLC (Drilling Carbon) material or a film laminate structure may be further provided as a protective adhesive film/barrier film (for example, about 0.1 micron to several For a few thicknesses). In an embodiment, the structure 500B in FIG. 5B may include a barrier layer 525 due to this protection. For example, in the final CMOS process step, the adhesive film/barrier film covers the exposed pads and electrode areas of the flexible integrated component.

After the protection process, the pad and electrode regions are again exposed by the lithography and etching process, and have a window size slightly smaller than the original window size, wherein the window size is smaller than the pad size and electrode size formed in the CMOS process. Therefore, the exposed sidewalls in the vicinity of the pad and the electrode are protected by the adhesive film/barrier layer formed in the protective process. The exposed sidewalls, if unprotected or covered, may expose materials of standard CMOS protective layers such as PECVD (plasma enhanced chemical vapor deposition) yttrium oxide and tantalum nitride.

In an embodiment, a metal electrode such as aluminum 511 can be used as the electrode. A deposition step of a biocompatible polymer, such as biocompatible polymer (I) 523, may be formed on the barrier layer such as barrier layer 525. The biocompatible polymer may be a polyimide, a polydimethylsiloxane (PDMS), a parylene, a liquid crystal polymer or other biocompatible material. In one embodiment, the biocompatible material is selected in accordance with the ISO 10993 standard. After forming the biocompatible layer, in one embodiment, the first handle wafer (handle Wafer) can be combined with the front side of the component. For example, as shown in FIG. 5C, the structure 500C includes a carrier substrate (I) 543 that is connected via a glue 545. The structure 500C can be thinned on the back side. In one embodiment, the electrode is exposed after a biocompatible polymeric layer, such as biocompatible polymer layer (I) 523.

Referring to FIG. 5D, in conjunction with the lapping and chemical etching steps, the germanium substrate of the component wafer, such as the substrate 501 of FIG. 5C, can be thinned to a suitable thickness. After bonding to the carrier substrate of the substrate (I) 543 as depicted in FIG. 5C, the wafer substrate such as the substrate 501 is mechanically thinned to a thickness of about 50 microns or other suitable thickness using a wafer grinder. . The ground surface may be damaged by microcracks due to the grinding process. In one embodiment, a germanium chemical etching process, such as SF6 plasma etching, dry XeF2 etching, or other available etching processes, can be used at a controlled thickness to remove such damage. Alternatively, SOI is used for etching on the substrate, and the buried oxide as a termination of etching is stopped. In general, the thickness is controlled from a few microns to less than a few tens of microns, such that the photosensitive element can effectively absorb photons through the thickness and the substrate can still be bent to the desired curvature. The structure 500D of FIG. 5D may include a wafer substrate that has been substantially thinned through the thinning process.

Referring to Figure 5E, after the thinning process, the adhesive film/barrier film is deposited on a ground and/or etched surface. Grooves (or perforations) are formed for dicing lanes, such as dividing lanes 531. The barrier layer 527 is deposited on the back side of the structure 500E of Figure 5E. Thus, the perforations (or through holes) between the front and back sides of the component are patterned and perforated, such as by lithography or reactive ion etching (RIE) processes or other processes available. For example, structure 500F as shown in FIG. 5F can include perforations or split lanes 531. In some embodiments, the sides of the flexible element can have openings similar to the openings of Figure 5F.

Referring to Figure 5G, the polymer layer can be etched through a carrier substrate to form a perforation. For example, the structure 500G can include etching from the biocompatible polymer (I) 523 to the moving The perforations 531 of the substrate (I) 543 are transported. A second biocompatible polymer layer is then deposited and patterned to form an opening. For example, a biocompatible polymer layer (II) 529 is deposited on the back side of the structure 500G, and a perforation 531 is formed thereon. The two biocompatible layers will be sealed together to enclose the component as shown by seal 555 of Figure 5G. In one embodiment, the biocompatible polymer (II) 529 (eg, 10 microns thick) may be thinner than the barrier layer 527 (eg, about 1 or 2 microns thick). The biocompatible polymer (I) 523 and the biocompatible polymer (II) 529 may have a thickness of a similar size.

Next, the second carrier substrate is attached to the component and is attached to the opposite side of the first carrier substrate on the component. The first carrier substrate can be removed from the component. For example, the structure 500H of FIG. 5H includes a new carrier substrate (II) 533 that has been attached to the back side of the first carrier substrate that has been removed from the front side, such as the carrier substrate (I) 543.

After the substrate is removed from the front side, a lithography and RIE (Reactive Ion Etching) process or other available process is performed to expose the electrodes. For example, the structure 500I of FIG. 5I includes an electrode 521 on the front side and passes through the opening of the biocompatible polymer layer (I) 523. Electrode 521 comprises a conductive metal material such as gold, platinum and/or copper. In one embodiment, the electrode 521 may be covered by other metal layers (IrOx, Pt, TiN, FeOx, etc.) as a preferred electrode-to-electrolyte interface. Alternatively or alternatively, the electrode may comprise a selective dielectric layer (e.g., a 0.1 micron thick high-k dielectric layer), such as dielectric layer 534 of Figure 5I, to provide a stimulus to replace the direct current of the direct current. In one embodiment, another means is an adhesive layer, such as laminin deposited on the top surface of the electrode from about a few microns to less than 0.1 micron to help the electrode adhere to the tissue, thereby enhancing implantation. Finally, the second processing wafer is removed to complete the process of the flexible integrated component. For example, the structure 500J of FIG. 5J is a flexible integrated component of the carrier substrate (II) 533 without the second carrier substrate, as shown in FIG.

5.1A-5.1F is a cross-sectional view showing another structure for fabricating a flexible member in an embodiment of the present invention. Structure 510A as shown in Figure 5.1A, CMOS circuit and light sensing element Integration with the microelectrode array can be fabricated on a germanium wafer using a standard or micro-adjusted CMO/CIS technology or other available technology. Grooves for dividing the tracks (e.g., about 50-100 microns wide) and selective perforations can be fabricated on the front side without the need for more than one carrier substrate. Therefore, this production process is efficient when the thinning process (such as back-plate grinding) is considered to be a dirty process and the cleaning process is limited by the back.

In one embodiment, structure 510A includes an oxide/metal layer 5105 and an active germanium layer 5107 disposed on a germanium or SOI wafer (not shown) in accordance with a CMOS/CIS process, for example. The active germanium layer 5107 includes a transistor 5123 and a light sensing element 5125, and is tied to a germanium substrate 5129 having an oxide layer 5131 selectively. In other words, the oxide layer 5131 is located between the germanium layers 5107 and 5129. At the end of the CMOS/CIS process, structure 510A includes a protective layer 5101 (such as tantalum nitride or hafnium oxide) having exposed metal electrodes such as metal 5103.

Referring to Figure 5.1B, structure 510B includes an electrode 5109 and a trench 5127 as a split or perforated in the flexible element. For example, a thin metal film is overlaid on the wafer of structure 510A. On a thin metal film wafer, a thick photoresist material is formed by spin coating. The electrode 5109 can be about the same as the desired thickness (e.g., 10 microns) of the final covering polymer layer. Additional photoresist coating and lithography processes can be used on the surface, and the RIE process is used to etch through the protective layer, the germanium dioxide layer, and into the germanium substrate to define trenches 5127. The trench 5127 can etch the tunneling region (or active germanium layer) 5107.

Next, referring to Figure 5.1C, structure 510C includes depositing a barrier layer 5111 on structure 510B of Figure 5.1B. The barrier layer 5111 is primarily DLC (Drilling Carbon), SiC or other useful materials. The barrier layer formed after the formation of the electrode 5109 is for protecting the sidewall of the electrode 5109. Next, a biocompatible polymer layer may be coated to cover the barrier layer 5111. For example, structure 510D of Figure 5.1D comprises a biocompatible polymer 5113. In one embodiment, the thickness is about 20 microns high The molecular layer system can be formed by spin coating and subsequent heating processes. The polymer layer is planarized by a grinding process mis-reactive ion etching process to approximate the electrode thickness (e.g., about 10 microns thick).

The structure 510E includes an electrode conductive layer 5115 formed of a SIROF (sputtered iridium oxide film). In one embodiment, in an oxygen-containing plasma, the SIROF can be sputtered with a target and a lift-off process is performed to define the electrode regions. Finally, a selective thin dielectric layer can be deposited on the surface of the microelectrode to operate the microelectrode in voltage mode.

Referring to Figure 5.E, structure 510E includes the use of an adhesive layer (e.g., wax) 5117 to adhere the front side of structure 510D of Figure 5.1D to carrier wafer 5133. The backside germanium substrate (eg, germanium substrate 5129 of FIG. 5.1D) can be thinned by a polishing process, chemical etching, and stopped at a total thickness of about 20 microns (eg, stopping at barrier layer 5111 or if SOI crystals are used) When it is round, it stays in the buried oxide layer). Thus, in subsequent biocompatible polymer coating processes, a barrier layer can be formed on the top surface of the thinned structure 510E.

For example, referring to Figure 5.1F, structure 510F includes barrier layer 5119 and biocompatible polymer layer 5121, for example, applied to structure 510E of Figure 5.1E using a backside protection process. The glue layer 5117 is removed by a dissolution process, and the structure 510F can be detached from the carrier wafer 5115. Thus, any barrier layer, such as barrier layer 5119, can be deposited on and in contact with another barrier layer, such as barrier layer 5111. The second biocompatible polymer layer, such as the polymer layers 5121, 5113, can completely cover and coat the thin wafer except in the microelectrode region.

In one embodiment, the separation of the dies can be cut through a segment such as a trench on the trench 5127. Alternatively, or alternatively, additional lithography and plasma etching and reactive etching processes may be utilized to define the perforations to remove the polymer and the barrier layer through trenches 5127. A selective adhesive layer (such as laminin, fibronectin) is formed on the surface of the microelectrode to enhance the contact of the tissue with the microelectrode.

6A-6D is a schematic cross-sectional flow diagram of a laminated structure of a flexible member implanted with an artificial retina by different methods. In one embodiment, the flexible integrated component of the artificial retina may comprise a thin substrate into which a portion of the light that is not obscured by the metal enters the component (or wafer). Therefore, a monolithic chip can be applied to an artificial epithelium (epi-retina) even when a photosensitive element is formed simultaneously with an electrode on the front side of the wafer.

For example, element 600A of Figure 6A includes photo-sensing element 607 and electrode 615 that are simultaneously on the front side (or the crystal side) of the element. Element 600A can be implanted from the back side of the ray 623 element using an epi-retina method. In one embodiment, the electrodes and photosensor elements of element 600A face one side of the retinal ganglion cells. Element 600A includes a laminate structure comprising a tantalum layer 603 having an optic/sensing element 605, an oxide layer 609, aluminum 613, and a selective tissue gel for electrode 615 (eg, laminin, fiber adhesion) The protein, etc.), the biocompatible polymer layer 601 of the cladding element, and the selective perforation 619 of the penetrating member.

In one embodiment, when the decay length of the visible light in the crucible is a few microns, the element 600A comprises a thin tantalum substrate having a thickness of less than 10 microns such that more than a small portion of the light energy from the back side of the element reaches the light sensing element. The thin tantalum substrate can be fabricated by using an SOI (on-insulator overlay) wafer and performing a thinning process after the MOS process.

Referring to Figure 6B, element 600B includes a similar laminate structure as element 600A of Figure 6A. In an embodiment, element 600B may utilize a sub-retinal method and ray 649 is implanted from a positive of the element. The electrode and photosensor element of element 600B face the side of the retina bipolar cells that are incident on the light.

In another embodiment, as shown in FIG. 6C, element 600C includes a light sensitive element 633 on the front side and an electrode 637 on the back side of the element. Advantageously, the electrodes of element 600C do not block incident light from entering the photosensitive element. In an embodiment, element 600C can be implanted from a frontal light 647 and an epi-retina approach to retinal ganglion cells. Element 600C includes a laminated junction The laminated structure comprises a germanium layer 629 having a transistor/light sensing element, an oxidation and metal interconnect layer 627, a selective adhesive 643 of the counter electrode 637, a biocompatible polymer covering the element, and a barrier layer. 635 and perforations 641 through the front and back of the component. The electrode 637 is connected to a processing circuit, such as a transistor circuit 631, through a conductive via such as a through silicon via (TSV).

Alternatively, in Figure 6D, element 600D comprises a similar laminate structure as element 6C of Figure 6C. Element 600D can be implanted from light 653 on the back of the element and by the following retinal method. The electrode of element 600D faces the side of the retina bipolar cells 651.

7A-7B are cross-sectional views showing a guard ring for adjacent loops and current limiting in an embodiment of the present invention. Section 7A flange member 700A includes an electrode that conforms to the zone loop or guard ring to limit current flow from the electrode. In an embodiment, the component 700A may be a flexible integrated component having a laminated structure including a germanium layer 707 having a transistor circuit 709 and a light sensing element 711, an oxide layer 719, and an aluminum 717. The electrode 715 and the biocompatible polymer (II) 701 and the biocompatible polymer (I) 703 around the cladding member and located on the barrier/adhesion layer 705. Element 700A can be implanted into tissue 721 in a current driven mode. For example, current 723 from electrode 715 can flow to the lowest impedance path. Element 700A can include a guard 713, such as a guard ring (or regional return electrode), to provide regional loop conductive flow 723 from the desired target direction.

Similar to Figure 7B, element 700B can operate from a voltage driven mode having an electric field 727 from electrode 715 that is shielded through shield 713. Element 700B includes a selective dielectric layer 725 opposite electrode 715.

Preferably, the electric field or current can be regionally confined (or lowered, narrowed) through the guard ring to the original electrode. Therefore, it is possible to avoid the stimulation of unwanted nerve cells, rather than the target nerve for each electrode, for example, without stimulating the ganglion cells. Polar cells. In a flexible integrated component with a guard ring, the electric field from the electrode may not be disturbed by other electric fields from the separation and using the guard ring electrode.

Fig. 8 is a schematic cross-sectional view showing a laminated structure having a protruding electrode in a flexible member according to an embodiment of the present invention. For example, component 800 includes a flexible integrated wafer having a raised electrode array. The component 800 includes a laminate structure having a metal/dielectric layer 807, a germanium having an active device 809, and a polymer and barrier layer 811 covering the device with the polymer barrier layer 813. The electrode 803 can protrude toward the target nerve cell 801 at a protruding end. Preferably, when implanted, the protruding stimulating electrodes can be pushed through certain discrete layers of tissue to be closer to the target location of the stimulus. Thus, the critical current or power required to bias the target nerve may be reduced, thereby allowing a higher number of electrodes to have better resolution (e.g., higher than, e.g., at least 250 per square millimeter).

Figure 9 is a cross-sectional view showing a laminated structure of a flexible member having a multi-step electrode height in an embodiment of the present invention. For example, component 900 includes a flexible integrated wafer of electrode arrays having multiple levels of protrusions. The element 900 includes a laminated structure having a metal/dielectric layer, a crucible having an active element 909, and a polymer and barrier layer 911 covering the element together with the polymer barrier layer 913. The electrodes 917, 903 are located at two different levels to stimulate the neural cells 901, 915, respectively.

In one embodiment, a multi-level protuberance electrode, such as electrodes 917, 903, can respectively stimulate different tissue layers of different types of neural cells (eg, ON-type cells, OFF-type cells, or other available cells). For example, when the retina connected between bipolar cells and ganglion cells is divided into two different tissue layer steps, the multi-level protruding electrodes can be labeled with the neural ON pathway and the OFF pathway, respectively.

10A-10B are block diagrams of signal processing circuits in a flexible component in accordance with an embodiment of the present invention. Element 1000A of FIG. 10A includes a pixel unit 1005, and this pixel unit The 1005 two-dimensional pixel unit array direction connects its neighboring pixel units 1001, 1003, 1007, 1009. The pixel unit 1005 receives (n, n) as a mark in the direction of the two-dimensional pixel unit array array, and further receives incident light at a time point indicated as (m, n, t). Each pixel unit can exchange information on the light received by neighboring units (or other available pixel units).

In one embodiment, each pixel unit includes a single processing circuit to receive input signals from adjacent pixel units. For example, as shown in Figure 10A, the signals I(m,n+1,t), I(m-1,n,t), I(m,,n-1,t), and I(m+1, n, t) may be given to the pixel unit 1005, respectively, from the neighboring pixel units 1001, 1003, 1007, 1009. The arrangement of pixel cells can be rectangular, hexagonal (eg, with each pixel element having six neighboring pixel cells), or other available two-dimensional or multi-dimensional arrays.

In an embodiment, the flexible integration element can include a signal processing circuit that can stimulate the neural network, and the processing mechanism of the neural network is similar to the central/surrounding against an acceptable neural field. For example, a pixel unit can produce a pixel current output (or stimulus) that is proportional to the sum of the central pixel optical density and the average difference in ambient optical density at adjacent locations to provoke proper RGC spiking. In general, for example, the closest neighbors, the second adjacent neighbors, the third adjacent neighbors, etc., obtain a processed signal from the captured light, which in turn produces a stimulus.

For example, the circuit 1000B of FIG. 10B includes a processing component 1015 for generating a weighted output signal Id(m, n) from the sensed input signal 1019 by weighting 1011 and 1013, respectively. ) 1017. In one embodiment, the 10A picture element unit 1005 includes circuitry 1000B for signal processing. Four sensed signals I(m-1,n), I(m+1,n), I(m,n-1), and I(m,n+1)1019 (eg, from neighboring pixel units The incoming input signal) may be equal to 1/4 of the sensed signal through the equal weight of the impedance component. In an embodiment, in addition to those pixel units at the instrument location, for a majority of the main adjacent pixel units, a weight (eg, dynamic setting) can be set to approximately zero (eg, equal to the corresponding adjacent picture) Prime unit is not connected) to reduce The effect of background absolute optical density in a similar method used by multi-point meters in digital cameras. In some embodiments, the signal subtraction can be performed on the processed signals exchanged from adjacent pixel units to produce a stimulus relative to the incident optical density, thereby replacing the absolute density.

11A-11B are schematic views showing the operation of the flexible member in one embodiment of the present invention. For example, in one embodiment of the invention, the flexible integration element can provide a partial autonomic recognition function, such as retinal ganglion cell 1105 and/or neural cell network 1107, to re-establish visual perception of damage or degradation. . The neural cell network may comprise, for example, horizontal cells, bipolar cells, amacrine cells, or other retinal nerve cells. Element 1133 includes processing circuitry 1101 that is coupled to microelectrode array 1103 and can send stimulation to and/or sense responses from nerve cells.

In an embodiment, element 1133 may be prepared when operating in a calibration/programming mode. Element 1133 can operate in other modes, such as normal mode, to stimulate nerve cells from incident light to provide visual perception. In an embodiment, in the correction/programming mode, the sensing component and processing circuitry 1101 can transition between sensing mode and driving mode to identify and install processing features (eg, through a programmable logic array or other Available programmable circuits), such that when some of the nerve cells are not functioning properly (eg, damaged, decayed, degraded, etc.), they can be incident on the light I(xi, yi) 1111 (as produced by the light) and The appropriate stimulus is generated for the desired sensed output signal O(pi, qi) 1115.

For example, for a nerve cell that is normally or relatively healthy, the sensing element and processing circuit 1101 can enter the sensing mode immediately after sending the stimulus from the incident light I(xi, yi) 1111, thereby generating a sensing output signal O. (pi, qi) 1115. In an embodiment, light I(xi, yi) 1111 can be generated to visually select and mount a portion of component 1133 (eg, a pixel unit or a group of pixel units). The processing circuit 1101 in the sensing mode can be used to detect the response of nerve cells, such as retinal ganglion cells 1105. This reaction can be voltage, waveform, or other available signal or more A period of time (spike) to indicate the sensed output signal O(pi, qi) 1115. Processing circuit 1101 can store information having a relationship between incident light and a corresponding detected response. In a neural cell, the data may represent an intrinsic processing characteristic H(pi, qj, xi, yi) 1135, for example based on the relationship indicated by O=H*I.

Next, as shown in FIG. 11B, the processing circuit 1101 can be used to perform operations to compensate for the loss or altered visual information processed by the nerve cells. For example, the light-receiving cells 1109 may be injured or discolored, thereby blocking the neural cell network 1107 from self-processing the sensed light signals. Thus, visual awareness can be based on the processing characteristics G'(pi, qj, x'i, y'j) 1135 of retinal ganglion cells 1105.

In an embodiment, the processing circuit 1101 may perform an operation (or conversion operation) H'(x'i, y'j, xi, yj) (either automatically or manually). For example, according to the effective light input I'=H'*I, the retinal ganglion cell 1105 can be stimulated in the processing circuit 1101, so that the perceived output signal O'(pi, qj) 1123 is approximated according to G'*I'. O(pi, qj) 1115. In an embodiment, H'(x'i, y'j, xi, yj) is programmed or installed based on the inherent processing characteristics H(pi, qj, xi, yj). The processing circuit 1101 is operated in a driving mode having processing capability. Operate in the normal mode of operation, or operate the component 1133 in the correct mode of operation to further fine tune or adjust.

In an embodiment, the processing circuitry can be combined with the electronic sensing circuitry to cause retinal neural response dynamics measurements in the calibration mode, such as when the retinal method of component 1133 is implanted. Immediately after the electronic stimulation, as the electronic sensing has the ability to convert the element (or wafer), the ON cell and the OFF cell can be identified by the reaction time, and when the light sensing element on the element senses the regional light information, this information It can be used to formulate specific electronic stimuli from adjacent electrodes.

Figure 12 is a block diagram showing the system of a flexible member in accordance with one embodiment of the present invention. System 1200 includes an assembleable artificial retina device, and this component has a wafer processing circuit 1101 that is selectively or infinitely coupled to external or remote control component 1201, thereby enabling adjustment/changeable grouping The mounted component 1133 provides a control or feedback path. In one embodiment, the processing circuit and electrode array 1103 can include electronic parameters or settings that can be updated by external commands, such as adjusting the sharpness of the light, the intensity of the stimulus, or other available parameters, for individual pixel levels and achieving the desired visual awareness. . In one embodiment, the patient can operate the remote control component 1201 through the user control interface 1207 based on a perceptual vision in a visual cortex.

In an embodiment, the external command 1203 may be an optical command that includes an optical input 1209, which may include a predetermined visual pattern. Alternatively, the external command 1203 can wirelessly transmit (eg, based on an EM signal or RF signal) to the component 1133 via an infinite transceiver. Element 1133 can include a particular light-sensing pixel and a special decoding circuit on the wafer to detect a particular light pulse pattern from optical input 1203, which in turn enters the wafer's adjustment/change correction mode.

In one embodiment, each pixel or pixel region of element 1133 can be accessed optically or wirelessly, respectively, through light reflection (e.g., into the eye in the implanted region). The pixels or regions can be electronically connected to the wafer to fine tune the electronic stimulation parameters to achieve the desired effect of visual perception. In an embodiment, the test pattern can be projected, for example, through optical input 1209, into the implanted retina or directly by the implanted patient. The target visual effect can be described by the patient to handle the manual adjustment of the parameters of the implanted artificial retina wafer, using the light input elements to achieve the best target visual effect.

Figure 13 is a flow chart showing a method of assembling a flexible member in accordance with an embodiment of the present invention. Method 1300 is performed using processing circuitry, including hardware (circuitry, dedicated logic, etc.), software (eg, executing machine code or processing elements in a machine), or a combination of both. For example, method 1300 can utilize some of the components of system 12 of FIG.

In one embodiment, as in step 1301, method 1300 can pass through the light sensing element and detect a light pattern (eg, predetermined) from the received light. The processing logic of method 1300 decodes the captured light Lines to obtain a pattern of light that is selectively encoded in light. In detecting the light pattern, the processing logic of method 1300 causes the component to enter a calibration mode. This component may contain an array of pixel cells to obtain light, thus obtaining visual awareness from the light. The pixel unit may include circuitry that is set with electronic parameters, such as a detection circuit for the light sensing element and/or a drive circuit for the counter electrode.

In an embodiment, as in step 1303, the processing logic of method 1300 can receive a light pattern to select a pixel unit from a pixel unit array of flexible integration elements. The light pattern can be related to known visual perception effects. For example, a patient implanting an element may be aware of which is a predictable visual perception. For example, the shape of a light image, the relative intensity of a light image, or other visual effects. At step 1305, the processing logic of method 1300 generates a stimulus from the selected pixel unit to stimulate the nerve cells, thereby causing the actual visual perception to be similar to the light pattern that the normal person should receive. In an embodiment, the light pattern can include a selection light pattern to identify which pixel unit should be selected.

Next, in an embodiment, as in step 1307, the processing logic of method 1300 receives an external command to update the electronic parameters of the flexible integrated component. The external command can be received selectively or wirelessly. The processing logic of method 1300 can update the electronic parameters to cause a change in the actual visual perception effect through the selected pixel pattern with the electronic parameters and the self-received light pattern (or other available incident light). The captured light (such as a light pattern) can be related to known visual effects. Due to the update, the actual visual perception can be changed to match the known visual perception to the appropriate assembly components. In one embodiment, the selected pixels of the pixel selection and updated for the electronic or circuit may respectively generate a light pattern.

In the above description, the invention has been described in connection with specific embodiments. Various modifications may be made to the specification without departing from the broader scope of the invention, and the above detailed description can be used as a support. The invention is not limited to specific forms, drawings, scales, and as illustrated Say the details of the disclosure. Accordingly, the specification and drawings are to be regarded as a description

200A‧‧‧ distribution diagram

201‧‧‧ retina

203‧‧‧ wafer

Claims (10)

A flexible artificial retinal device comprising: a plurality of light sensing elements for receiving a light; a plurality of microelectrodes; and a circuit coupled to the plurality of light sensing elements and the plurality of microelectrodes, the circuit driving the plurality a microelectrode for stimulating a nerve cell to sense an image of the light captured by the plurality of light sensing elements; wherein the plurality of light sensing elements, the plurality of microelectrodes, and the circuit are integrated in a semiconductor device; Wherein the semiconductor device comprises a germanium substrate carrying a plurality of the plurality of microelectrodes; wherein the thickness of the germanium substrate allows the semiconductor device to have flexibility to conform to the shape of a human eye, and allows the plurality of microelectrodes to be close to the nerve cell. The flexible artificial retina device according to claim 1, wherein the semiconductor device further comprises an array of pixel units, wherein each pixel unit comprises one of the plurality of microelectrodes, and the plurality of photosensors One, and a corresponding portion of the circuit. The flexible artificial retina device according to claim 1, wherein the semiconductor device comprises a layered structure comprising a semiconductor layer and a plurality of metal interconnect layers, the semiconductor layer comprising the plurality of light sensing elements and electricity a crystal, the plurality of microelectrodes being separated from the semiconductor and the plurality of metal interconnect layers, the plurality of microelectrodes being coupled to the circuit by the plurality of metal interconnect layers. The flexible artificial retina device according to claim 3, wherein the layered structure comprises a substrate, wherein the semiconductor layer is disposed on the front side of the layered structure adjacent to the semiconductor device, and the substrate is disposed on the substrate The layered structure is adjacent to the back side of the semiconductor device relative to one of the front sides. The flexible artificial retina device of claim 4, wherein the semiconductor device allows the light to reach the plurality of light sensing elements on the semiconductor layer from the front side. The flexible artificial retina device of claim 4, wherein the plurality of microelectrodes contact the nerve cells from the front side of the semiconductor device. The flexible artificial retina device according to claim 3, wherein the stimulation is based on a current flowing from the plurality of microelectrodes to the nerve cells, wherein the layered structure comprises a plurality of guard rings, and each of the micro The electrode is surrounded by one of the plurality of guard rings to provide a zone loop to limit the current flow from the plurality of microelectrodes to the target nerve cells. An apparatus implantable into a tissue comprising a plurality of neural cells, comprising: a plurality of pixel units disposed in a two-dimensional array to sense an image of a light entering the plurality of pixel units, each pixel unit comprising: a light sensing element for receiving the light; a microelectrode that transmits a target nerve cell that is stimulated to the plurality of nerve cells for sensing; and a circuit that takes the stimulus from the light and drives the light a microelectrode, wherein the two-dimensional array is disposed in a semiconductor device having a front surface and a rear surface of the front surface, the semiconductor device including the microelectrode carrying the plurality of pixel units a germanium substrate; and a biocompatible layer encapsulating the semiconductor device to protect the semiconductor device and the tissue in both directions, the biocompatible layer having an opening to allow the plurality of microelectrodes of the plurality of pixel units to stimulate the nerve a cell; wherein the thickness of the germanium substrate allows the semiconductor device to bend in a two-dimensional direction to conform to the shape of a human eye, and to allow the plurality of microelectrodes Near the nerve cells; Wherein the thickness of the germanium substrate allows the light sensing element to extract light entering from the front surface or from the rear surface. The apparatus of claim 8 further comprising: a plurality of perforations through the semiconductor device to allow fluid to flow between the front surface and the back surface through the plurality of perforations. An integrated circuit device for an artificial retina, comprising: an array of pixel units for sensing an image of a light, each pixel unit comprising: a light sensing element for sensing the light; a microelectrode, Transmitting a target nerve cell that is stimulated to the plurality of nerve cells for sensing; and a circuit that takes the stimulus from the light and drives the microelectrode; wherein the photosensitive element, the microelectrode, and the circuit Integrating in a semiconductor device, the semiconductor device includes a microelectrode carrying each of the pixel units; wherein the pixel unit array is configured to have a density of more than 250 per square millimeter; wherein the thickness of the device is Bending to allow the pixel element array to be deformed to have a radius of curvature of at least 12.5 mm depending on a shape of a human eye, and to allow the microelectrode to be in close proximity to the target nerve cell.