TWI513386B - Method for forming conductive via on glass substrate - Google Patents

Description

Method of forming via holes on a glass substrate

The present invention relates to a substrate structure and a method of forming via holes on a substrate, and more particularly to a glass substrate structure and a method of forming via holes on a glass substrate.

In addition to the powerful requirements of consumers, the requirements for electronic products are lighter, thinner, shorter, and smaller. Therefore, the integration of electronic products on the market is getting higher and higher, and the functions are getting stronger and stronger. In order to reduce the volume of the package structure of the wafer in the electronic product, the number of layers of the substrate on which the wafer is mounted is also changed from a single layer to a plurality of layers. In order to connect the lines between the multilayer substrates to each other in the thickness direction of the substrate, a plated through hole (PTH) technique may be employed in each of the substrates.

The plated through hole refers to a plurality of through holes penetrating through the substrate on one substrate, and then electroplating is used to plate the conductive material into the through holes. After the plating step is completed, the conductive material in the through holes can be electrically connected to the lines of other layers. In the current application technology, the plated through holes formed by electroplating can be empty. Heart plated through holes or solid plated through holes.

Because of its low cost and mature technology, glass is a commonly used substrate material. In the prior art, when a plated through hole technique is used for a glass substrate, a portion of the glass substrate on which a through hole is to be formed is usually selectively etched. However, during the etching process, the etchant is somewhat on the glass substrate. The other parts cause erosion, so that the surface of the glass substrate after the formation of the via hole has a large surface roughness, thereby affecting the yield of the subsequent process.

The invention provides a glass substrate structure, which has better process yield.

The present invention provides a method of forming via holes on a glass substrate, which has a better yield of a glass substrate structure having via holes.

The method for forming a via hole in a glass substrate provided by the present invention includes the following steps. First, a glass substrate is provided, including a first surface and a second surface opposite the first surface. Next, a first metal layer is formed on the first surface. Next, a patterned photoresist layer is formed on the first metal layer. The patterned photoresist layer has a plurality of openings to expose a portion of the first metal layer. Next, a portion of the first metal layer exposed by the opening is removed to form a first patterned metal layer. Thereafter, the patterned photoresist layer is removed. Next, a second metal layer is formed on the second surface. Next, the first surface is irradiated with an ultraviolet ray by using the first patterned metal layer as a barrier. A baking process is performed on the glass substrate, and then an etching process is performed on the glass substrate to remove portions exposed by the first patterned metal layer to form a plurality of blind holes on the first surface. Remove the first patterned gold a genus layer and a second metal layer. Next, a conductive layer is formed on the first surface to be filled in the blind holes, respectively. Thereafter, the glass substrate is ground from the second surface toward the first surface to expose the bottom surface of the blind via so that the glass substrate has a plurality of via holes.

The method for forming a via hole in a glass substrate provided by the present invention includes the following steps. A glass substrate is provided, including a first surface and a second surface opposite the first surface. Forming a first metal layer on the first surface. Forming a first patterned photoresist layer on the first metal layer, the first patterned photoresist layer having a plurality of first openings to expose a portion of the first metal layer. A portion of the first metal layer exposed by the first opening is removed to form a first patterned metal layer. The first patterned photoresist layer is removed. The first surface is irradiated with an ultraviolet ray by using the first patterned metal layer as a barrier. A second metal layer is formed on the second surface. Forming a second patterned photoresist layer on the second metal layer, the second patterned photoresist layer having a plurality of second openings, wherein the second openings respectively correspond to the first openings to expose corresponding portions of the second metal layer . A portion of the second metal layer exposed by the second opening is removed to form a second patterned metal layer. The second surface is irradiated with ultraviolet rays by using the second patterned metal layer as a barrier. A baking process is performed on the glass substrate. An etching process is performed on the glass substrate to remove portions exposed by the first patterned metal layer and the second patterned metal layer to form a plurality of via holes penetrating the glass substrate. The first patterned metal layer and the second patterned metal layer are removed. A conductive layer is formed, which are respectively filled in the through holes to form a plurality of via holes.

The method for forming a via hole in a glass substrate provided by the present invention includes the following steps. A glass substrate is provided, including a first surface and a second surface opposite the first surface. Forming a first patterned photoresist layer on the first surface, the first patterned light The resist layer has a plurality of first openings to expose a portion of the first surface. The first surface is irradiated with an ultraviolet ray by using the first patterned photoresist layer as a barrier. Forming a second patterned photoresist layer on the second surface, the second patterned photoresist layer having a plurality of second openings, wherein the second openings respectively correspond to the first openings to expose the corresponding portion of the second surface. The second surface is irradiated with ultraviolet rays by using the second patterned photoresist layer as a barrier. The first patterned photoresist layer and the second patterned photoresist layer are removed. A baking process is performed on the glass substrate. An etching process is performed on the glass substrate to remove portions irradiated by the ultraviolet rays to form a plurality of through holes penetrating the glass substrate. A conductive layer is formed, which are respectively filled in the through holes to form a plurality of via holes.

The glass substrate structure of the present invention comprises a glass substrate and a plurality of conductive layers. The glass substrate includes a plurality of through holes, a first surface, and a second surface opposite the first surface. The through hole penetrates the glass substrate to communicate the first surface and the second surface, wherein the roughness of the first surface and the second surface of the glass substrate is smaller than the roughness of an inner wall of each of the through holes. The conductive layers are respectively filled in the through holes to electrically conduct the first surface and the second surface.

In an embodiment of the invention, the step of performing an etching process on the glass substrate further comprises: dipping the glass substrate into an etching solution and applying an ultrasonic vibration.

In an embodiment of the invention, the step of forming the conductive layer on the first surface further comprises: forming a conductive layer on the first surface, the conductive layer covering the first surface and filling the blind holes respectively. Next, a portion of the conductive layer overlying the first surface is removed to form a conductive layer that fills the blind via.

In an embodiment of the invention, each of the through holes is an hourglass-shaped through hole, wherein an outer diameter of each of the through holes on the first surface and the second surface is larger than an outer diameter of a cross section of each of the through holes in the other portion.

Based on the above, the present invention uses a patterned metal layer provided on the surface of a glass substrate as a barrier to irradiate the glass substrate with ultraviolet rays, and performs a baking and etching process to form via holes on the glass substrate. Thus, when the via hole is formed by etching, since the surface of the glass substrate is protected by the patterned metal layer, the roughness of the surface of the glass substrate is substantially smaller than the roughness of the inner wall of each of the via holes, thereby increasing the glass substrate in the subsequent step. Reliability in combination with other components in the process. Moreover, since the thickness of the patterned metal layer is thin and directly in contact with the glass substrate, ultraviolet rays can be transmitted in parallel with each other in the glass substrate, so that the subsequently formed through holes can be parallel to each other, thereby improving the through hole. Concentration. In addition, the present invention can also pattern the photoresist layer as a barrier to respectively irradiate ultraviolet light on both sides of the glass substrate, and perform a baking and etching process to form an hourglass-shaped through hole on the glass substrate.

The above described features and advantages of the invention will be apparent from the following description.

100, 100a, 100b‧‧‧ glass substrate structure

110‧‧‧ glass substrate

112‧‧‧ first surface

114‧‧‧ second surface

116‧‧‧First exposure area

118‧‧‧Second irradiation area

119‧‧‧ surface

120‧‧‧First metal layer

122‧‧‧First patterned metal layer

130‧‧‧ patterned photoresist layer, first patterned photoresist layer

132‧‧‧ openings, first opening

140‧‧‧Second metal layer

142‧‧‧Second patterned metal layer

150‧‧‧Blind holes, through holes

152‧‧‧ bottom

160‧‧‧ Conductive layer, initial conductive layer

170‧‧‧Second patterned photoresist layer

172‧‧‧ second opening

180‧‧‧ seed layer

UV‧‧‧UV

1A through 1M are schematic cross-sectional views showing a flow of a method of forming via holes in a glass substrate according to an embodiment of the invention.

2A to 2N are diagrams of a glass substrate in accordance with an embodiment of the present invention. A schematic cross-sectional view of a method of forming a via.

3A-3J are schematic cross-sectional views showing a method of forming via holes in a glass substrate according to an embodiment of the invention.

1A through 1M are schematic cross-sectional views showing a flow of a method of forming via holes in a glass substrate according to an embodiment of the invention. In this embodiment, the method of forming the via holes in the glass substrate includes the following steps: First, referring to FIG. 1A, a glass substrate 110 is provided. The glass substrate 110 includes a first surface 112 and a second surface 114 opposite the first surface 112. In the present embodiment, the glass substrate 110 can be, for example, a photo-sensitive glass substrate having a thickness of substantially 500 micrometers (μm). Next, a first metal layer 120 is formed on the first surface 112 as shown in FIG. 1B, wherein the first metal layer 120 can cover the first surface 112 in a comprehensive manner, and the first metal layer 120 is formed by sputtering, for example. On the first surface 112. Next, referring to FIG. 1C, a patterned photoresist layer 130 is formed on the first metal layer 120. The patterned photoresist layer 130 has a plurality of openings 132 as shown in FIG. 1C to expose portions of the first metal layer 120.

Referring to FIG. 1D, a portion of the first metal layer 120 exposed by the opening 132 is removed by, for example, etching or the like, and the patterned photoresist layer 130 is removed to form a first patterned metal as shown in FIG. 1D. Layer 122. Next, referring to FIG. 1E, a second metal layer 140 is formed on the second surface 114, wherein the second metal layer 140 can cover the second surface 114 in a comprehensive manner, and the second metal layer 140 is formed, for example, by sputtering. On the second surface 114.

In the above, referring to FIG. 1F, the first surface 112 is irradiated with ultraviolet UV with the first patterned metal layer 122 as a barrier, and then the glass substrate 110 is subjected to a baking process to partially irradiate the glass substrate with ultraviolet rays ( The dotted line region shown in Fig. 1F is chemically changed to be turned into a ceramic as shown in Fig. 1G (the dot area in Fig. 1G). The baking process of this embodiment is initially heated to 500 ° C, for example, at a heating rate of 6 ° C / min, then the baking temperature is maintained at 500 ° C for about 75 minutes, and then baked at a heating rate of 3 ° C / min. The above baking process can be completed by raising the temperature to 570 ° C and maintaining the baking temperature at 570 ° C for about 75 minutes. Of course, this embodiment is only for exemplification, and the user can adjust the baking temperature, the heating rate, and the baking time according to actual product requirements.

Thereafter, an etching process is performed on the glass substrate 110 to remove a portion of the substrate 110 exposed by the first patterned metal layer 122, that is, a portion of the substrate 110 irradiated by the ultraviolet rays, and on the first surface 112. A plurality of blind holes 150 are formed. In the present embodiment, the etching process is performed, for example, by immersing the glass substrate 110 in hydrogen fluoride (HF) having a concentration of about 5% for about 5-15 minutes for etching. Here, since the present embodiment has passed through the foregoing process and the first patterned metal layer 122 is used as a barrier, part of the glass substrate 110 is converted into ceramic, and the etching rate of the ceramic and glass in hydrofluoric acid is about 20: 1. Therefore, the portion of the glass substrate 110 exposed by the first patterned metal layer 122 is removed to form a plurality of blind vias 150 as shown in FIG. 1H on the first surface 112. In addition, in this embodiment, an ultrasonic vibration is applied while the glass substrate 110 is immersed in the etching liquid, so that the etching residue is dissolved in the etching solution. Solution, and the above effects are promoted by the fine vibration caused by the ultrasonic waves. Of course, this embodiment is only for exemplification, and the user can adjust the process conditions such as the etching liquid type, concentration, and soaking time of the etching process according to actual product requirements.

Next, the first patterned metal layer 122 and the second metal layer 140 shown in FIG. 1H are removed to form a glass substrate 110 having a blind via 150 as shown in FIG. This embodiment may remove the first patterned metal layer 122 and the second metal layer 140, for example, by immersing the glass substrate 110 shown in FIG. 1H in hydrogen peroxide (H ₂ O ₂ ) for about 5 to 15 minutes. As such, since the blind vias 150 are formed by the hydrofluoric acid etching, the first surface 112 and the second surface 114 are protected by the first patterned metal layer 122 and the second metal layer 140, thereby removing the first patterned metal layer. The roughness of the first surface 112 and the second surface 114 of the glass substrate 110 behind the second metal layer 140 is substantially smaller than the roughness of an inner wall of each blind hole 150.

Next, a conductive layer 160 is formed in the blind via 150. In detail, the step of forming the conductive layer 160 in the blind via 150 includes first forming a sub-layer 180 as shown in FIG. 1J in the first surface 112 and the blind via 150, and then using the seed layer 180 as a plating path. An electroplating process is performed to form an initial conductive layer 160 on the first surface 112 as shown in FIG. 1K, wherein the initial conductive layer 160 covers the first surface 112 and is filled in the blind vias 150, respectively. A portion of the initial conductive layer 160 overlying the first surface 112 is then removed to form a conductive layer 160 that is filled in the blind via 150 as shown in FIG. 1L.

Thereafter, the second surface 114 is further directed to the first surface 112 by a method such as chemical mechanical polishing (CMP). The glass substrate 110 is ground to expose the bottom surface 152 of the blind via 150 to form a glass substrate structure 100 having vias as shown in FIG. 1M. It should be noted that the polishing process of the present embodiment can actually grind the glass substrate from the second surface toward the first surface to the bottom surface of the blind hole. Of course, the invention is not limited thereto.

The glass substrate structure 100 formed by the above manufacturing method includes a glass substrate 110 and a plurality of conductive layers 160 as shown in FIG. 1M. The glass substrate 110 includes a plurality of through holes 150 and opposing surfaces 112 and 119. The through hole 150 penetrates the glass substrate 110 to communicate the two surfaces 112 and 119 , wherein the roughness of the opposite surfaces 112 and 119 of the glass substrate 110 is smaller than the roughness of an inner wall of each of the through holes 150 . The conductive layers 160 are respectively filled in the via holes 150 to electrically conduct the surfaces 112 and 119. In the present embodiment, the thickness of the glass substrate 110 is substantially about 100 microns, and the diameter of the via holes 150 is substantially between about 5 and 100 microns. Of course, the present embodiment is only for exemplification, and the present invention is not limited thereto. The user can adjust the thickness of the glass substrate 110 or the diameter of the via hole 150 according to actual product requirements.

2A through 2N are schematic cross-sectional views showing a flow of a method of forming via holes in a glass substrate according to an embodiment of the invention. It should be noted that the method for forming the via holes in the glass substrate in this embodiment is similar to the method for fabricating the foregoing embodiments. Therefore, the present embodiment uses the component numbers and parts of the foregoing embodiments, wherein the same reference numerals are used. The same or similar elements are denoted, and the description of the same technical contents is omitted. For the description of the omitted part, reference may be made to the foregoing embodiment, and the description is not repeated herein.

Referring first to FIG. 2A, a glass substrate 110 is provided. The glass substrate 110 includes a first surface 112 and a second surface 114 opposite the first surface 112. In the present embodiment, the glass substrate 110 can be, for example, a photo-sensitive glass substrate having a thickness of substantially 100 micrometers (μm). Of course, this embodiment is only for exemplification, and the user can adjust the thickness of the glass substrate 110 according to actual product requirements. Next, a first metal layer 120 is formed on the first surface 112 as shown in FIG. 2B, wherein the first metal layer 120 can cover the first surface 112 in a comprehensive manner, and the first metal layer 120 is formed by sputtering, for example. On the first surface 112. Next, referring to FIG. 2C, a first patterned photoresist layer 130 is formed on the first metal layer 120. The first patterned photoresist layer 130 has a plurality of first openings 132 as shown in FIG. 2C to expose a portion of the first metal layer 120.

Referring to FIG. 2D, a portion of the first metal layer 120 exposed by the first opening 132 is removed by, for example, etching, and then the first patterned photoresist layer 130 is removed to form a first layer as shown in FIG. 2D. A patterned metal layer 122. Next, as shown in FIG. 2E, the first surface 112 is irradiated with ultraviolet rays UV with the first patterned metal layer 122 as a barrier.

Next, as shown in FIG. 2F, the glass substrate 110 is turned over, that is, the first surface 112 facing upward is turned downward, and the second surface 114 is directed upward, and a second surface 114 is formed. The second metal layer 140, wherein the second metal layer 140 can cover the second surface 114 in a comprehensive manner, and the second metal layer 140 is formed on the second surface 114 by sputtering, for example. Next, referring to FIG. 2G, a second patterned photoresist layer 170 is formed on the second metal layer 140. Second patterned photoresist Layer 170 has a plurality of second openings 172 as shown in FIG. 2G to expose portions of second metal layer 140.

Referring to FIG. 2H, a portion of the second metal layer 140 exposed by the second opening 172 is removed by, for example, etching, and then the second patterned photoresist layer 170 is removed to form a second layer as shown in FIG. 2H. The second patterned metal layer 142. Next, as shown in FIG. 2I, the second surface 114 is irradiated with ultraviolet UV by using the second patterned metal layer 142 as a barrier, and then the glass substrate 110 is subjected to a baking process to partially irradiate the glass substrate with ultraviolet rays. (The dotted line area shown in Fig. 2H) produces a chemical change and turns into a ceramic as shown in Fig. 2J (the dot area in Fig. 2J). The baking process of this embodiment is initially heated to 500 ° C, for example, at a heating rate of 6 ° C / min, then the baking temperature is maintained at 500 ° C for about 75 minutes, and then baked at a heating rate of 3 ° C / min. The above baking process can be completed by raising the temperature to 570 ° C and maintaining the baking temperature at 570 ° C for about 75 minutes. Of course, this embodiment is only for exemplification, and the user can adjust the baking temperature, the heating rate, and the baking time according to actual product requirements.

Then, an etching process is performed on the glass substrate 110 to remove a portion of the substrate 110 exposed by the first patterned metal layer 122 and the second patterned metal layer 142, that is, a portion of the substrate 110 irradiated by ultraviolet rays. A plurality of through holes 150 penetrating through the glass substrate 110 are formed. In the present embodiment, the etching process is performed, for example, by immersing the glass substrate 110 in hydrogen fluoride (HF) having a concentration of about 5% for about 5-15 minutes for etching. Here, since the embodiment has passed through the foregoing process and the first patterned metal layer 122 and the second patterned metal layer 142 are used as the screen The glass substrate 110 is converted into a ceramic, and the etching rate of the ceramic and the glass in the hydrofluoric acid is about 20:1. Therefore, the glass substrate 110 is patterned by the first patterned metal layer 122 and the second patterned metal. The exposed portions of layer 142 are removed to form a plurality of vias 150 through glass substrate 110 as shown in FIG. 2K. Further, in the present embodiment, an ultrasonic vibration is applied while the glass substrate 110 is immersed in the etching liquid, so that the etching residue is dissolved in the etching liquid, and the above effect is promoted by the fine vibration caused by the ultrasonic wave. Of course, this embodiment is only for exemplification, and the user can adjust the process conditions such as the etching liquid type, concentration, and soaking time of the etching process according to actual product requirements.

Next, the first patterned metal layer 122 and the second patterned metal layer 142 are removed to form a glass substrate 110 having a via 150 as shown in FIG. 2L. This embodiment may remove the first patterned metal layer 122 and the second patterned metal layer 142, for example, by immersing the glass substrate 110 shown in FIG. 2K in hydrogen peroxide (H ₂ O ₂ ) for about 5 to 15 minutes. As such, since the via 150 is formed by the hydrofluoric acid etching, the first surface 112 and the second surface 114 have the protection of the first patterned metal layer 122 and the second patterned metal layer 142, and thus the first pattern is removed. The roughness of the first surface 112 and the second surface 114 of the glass substrate 110 behind the metal layer 122 and the second patterned metal layer 142 is substantially smaller than the roughness of an inner wall of each of the through holes 150.

Next, a conductive layer 160 is formed in the via 150. In detail, the step of forming the conductive layer 160 in the via 150 includes first forming the initial conductive layer 160 as shown in FIG. 2M by using the seed layer 180 as a plating path, wherein the initial conductive layer 160 covers the first surface. 112 and the second surface 114 are respectively filled in Inside the through hole 150. A portion of the initial conductive layer 160 overlying the first surface 112 and the second surface 114 is then removed to form a conductive layer 160 filled in the via 150 as shown in FIG. 2N. Thus, the glass substrate structure 100a having a plurality of via holes as shown in FIG. 2N is substantially completed.

The glass substrate structure 100a formed according to the above manufacturing method includes a glass substrate 110 and a plurality of conductive layers 160 as shown in FIG. 2N. The glass substrate 110 includes a plurality of through holes 150 and opposing first and second surfaces 112, 114. The through hole 150 penetrates the glass substrate 110 to communicate the first surface 112 and the second surface 114 , wherein the roughness of the first surface 112 and the second surface 114 is smaller than the roughness of an inner wall of each of the through holes 150 . The conductive layers 160 are respectively filled in the through holes 150 to electrically conduct the first surface 112 and the second surface 114. In the present embodiment, the thickness of the glass substrate 110 is substantially about 100 microns, and the diameter of the via 150 is substantially between about 50 and 100 microns. Of course, this embodiment is only for exemplification, and the user can adjust the thickness of the glass substrate 110 and the diameter of the via hole 150 according to actual product requirements.

3A-3J are schematic cross-sectional views showing a method of forming via holes in a glass substrate according to an embodiment of the invention. It should be noted that the method for forming the via holes in the glass substrate in this embodiment is similar to the method for fabricating the foregoing embodiments. Therefore, the present embodiment uses the component numbers and parts of the foregoing embodiments, wherein the same reference numerals are used. The same or similar elements are denoted, and the description of the same technical contents is omitted. For the description of the omitted part, reference may be made to the foregoing embodiment, and the description is not repeated herein.

First, referring to FIG. 3A, a glass substrate 110 is provided. The glass substrate 110 includes a first surface 112 and a second surface 114 opposite the first surface 112. In the present embodiment, the glass substrate 110 can be, for example, a photo-sensitive glass substrate having a thickness of substantially 100 micrometers (μm). Of course, this embodiment is only for exemplification, and the user can adjust the thickness of the glass substrate 110 according to actual product requirements. Next, a first patterned photoresist layer 130 is formed on the first surface 112 as shown in FIG. 3B, wherein the first patterned photoresist layer 130 has a plurality of first openings 132 to expose a portion of the first surface. 112. Thereafter, referring to FIG. 3C, the first surface 112 is irradiated with ultraviolet rays UV with the first patterned photoresist layer 130 as a barrier to form a plurality of first illumination regions 116 on the glass substrate. Next, the first patterned photoresist layer 130 is removed to form a structure as shown in FIG. 3D.

Next, as shown in FIG. 3E, the glass substrate 110 is turned over, that is, the first surface 112 facing upward is turned downward, and the second surface 114 is directed upward, and a second patterned light is formed. The resist layer 170 is on the second surface 114. The second patterned photoresist layer 170 has a plurality of second openings 172 corresponding to the first openings 132 to expose the corresponding partial second surfaces 114.

Referring to FIG. 3F, the second surface 114 is irradiated with ultraviolet light UV by using the second patterned photoresist layer 170 as a barrier to form a plurality of second illumination regions 118 on the glass substrate, wherein the second illumination region 118 is as shown in FIG. 3F. The portion is shown partially overlapping the first illumination region 116, after which the second patterned photoresist layer 170 is removed. It should be noted here that since the embodiment of FIGS. 2A to 2N is a patterned metal layer 122 and 142 as a barrier for ultraviolet irradiation, the patterned metal layers 122 and 142 are thin and Direct contact with the glass substrate 110 allows the ultraviolet rays to be transmitted closer to the straight line in the glass substrate 110, and the irradiation regions parallel to each other as shown in Fig. 2E can be formed. In this embodiment, the patterned photoresist layers 130 and 170 are used as a barrier for ultraviolet irradiation, and the thickness thereof is relatively thick, so that the transmission path of the ultraviolet rays in the glass substrate 110 is slightly diverged to form a cone-like irradiation area, plus In this embodiment, the patterned photoresist layer is used as a barrier for ultraviolet irradiation on both sides of the glass substrate 110, thereby forming an hourglass-shaped irradiation region as shown in FIG. 3F, and the irradiation region is on the first surface 112 and the second surface. The outer diameter on the 114 is larger than the outer diameter of each of the through holes in the other portions.

Referring to FIG. 3G, a baking process is performed on the glass substrate 110 to generate a chemical in the combination region of the first irradiation region 116 and the second irradiation region 118 irradiated with ultraviolet rays (such as the dot region shown in FIG. 3G). Change and turn into ceramics. The baking process of this embodiment is initially heated to 500 ° C, for example, at a heating rate of 6 ° C / min, then the baking temperature is maintained at 500 ° C for about 75 minutes, and then baked at a heating rate of 3 ° C / min. The above baking process can be completed by raising the temperature to 570 ° C and maintaining the baking temperature at 570 ° C for about 75 minutes. Of course, this embodiment is only for exemplification, and the user can adjust the baking temperature, the heating rate, and the baking time according to actual product requirements.

Then, an etching process is performed on the glass substrate 110 to remove the joint region (the dot area shown in FIG. 3G) of the first irradiation region 116 and the second irradiation region 118 irradiated by the ultraviolet rays, and form an image as shown in FIG. A plurality of through holes 150 penetrating the glass substrate 110 shown in 3H. In this embodiment, the etching process is, for example, immersing the glass substrate 110 in hydrogen fluoride (HF) having a concentration of about 5% for about 5-15. Minutes to etch. Here, since the embodiment has converted the combination region of the first irradiation region 116 and the second irradiation region 118 into ceramic through the foregoing process, the etching rate of ceramic and glass in hydrofluoric acid is about 20:1, The combination region of the first irradiation region 116 and the second irradiation region 118 is removed to form a plurality of through holes 150 penetrating the glass substrate 110 as shown in FIG. 3H. Further, in the present embodiment, an ultrasonic vibration is applied while the glass substrate 110 is immersed in the etching liquid, so that the etching residue is dissolved in the etching liquid, and the above effect is promoted by the fine vibration caused by the ultrasonic wave. Of course, this embodiment is only for exemplification, and the user can adjust the process conditions such as the etching liquid type, concentration, and soaking time of the etching process according to actual product requirements.

Next, a conductive layer 160 is formed in the via 150. In detail, the step of forming the conductive layer 160 in the via 150 includes first forming an initial conductive layer 160 as shown in FIG. 3I by electroplating, wherein the initial conductive layer 160 covers the first surface 112 and the second surface 114, respectively. Filled in the through hole 150. A portion of the initial conductive layer 160 overlying the first surface 112 and the second surface 114 is then removed to form a conductive layer 160 that is filled in the via 150 as shown in FIG. 3J. Thus, the glass substrate structure 100b having a plurality of via holes as shown in FIG. 3J is substantially completed.

The glass substrate structure 100a formed by the above manufacturing method includes a glass substrate 110 and a plurality of conductive layers 160 as shown in FIG. 3J. The glass substrate 110 includes a plurality of through holes 150 and opposing first and second surfaces 112, 114. The through hole 150 penetrates the glass substrate 110 to communicate the first surface 112 and the second surface 114 , wherein the roughness of the first surface 112 and the second surface 114 is smaller than the roughness of an inner wall of each of the through holes 150 . In this embodiment, each of the through holes 150 is an hourglass-shaped through hole. The outer diameter of each of the through holes 150 on the first surface 112 and the second surface 112 is larger than the outer diameter of the cross section of each of the through holes 150 in other portions. The conductive layers 160 are respectively filled in the through holes 150 to electrically conduct the first surface 112 and the second surface 114. In the present embodiment, the thickness of the glass substrate 110 is substantially about 100 microns, and the diameter of the via holes 150 is substantially between about 5 and 100 microns. Of course, this embodiment is only for exemplification, and the user can adjust the thickness of the glass substrate 110 and the diameter of the via hole 150 according to actual product requirements.

In summary, the present invention uses a patterned metal layer provided on the surface of a glass substrate as a barrier to irradiate the glass substrate with ultraviolet rays, and performs a baking and etching process to form via holes on the glass substrate. Thus, when the via hole is formed by etching, since the surface of the glass substrate is protected by the patterned metal layer, the roughness of the surface of the glass substrate is substantially smaller than the roughness of the inner wall of each of the via holes, thereby increasing the glass substrate in the subsequent step. Reliability in combination with other components in the process. Moreover, since the thickness of the patterned metal layer is thin and directly in contact with the glass substrate, ultraviolet rays can be transmitted in parallel with each other in the glass substrate, so that the subsequently formed through holes can be parallel to each other, thereby improving the through hole. Concentration. In addition, the present invention can also pattern the photoresist layer as a barrier to respectively irradiate ultraviolet light on both sides of the glass substrate, and perform a baking and etching process to form an hourglass-shaped through hole on the glass substrate.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100‧‧‧ glass substrate structure

110‧‧‧ glass substrate

112‧‧‧ first surface

119‧‧‧ surface

150‧‧‧through hole

160‧‧‧ Conductive layer

Claims (8)

A method of forming a via hole in a glass substrate, comprising: providing a glass substrate including a first surface and a second surface opposite to the first surface; forming a first metal layer on the first surface; forming a patterned light Resisting a layer on the first metal layer, the patterned photoresist layer having a plurality of openings to expose a portion of the first metal layer; removing portions of the first metal layer exposed by the openings to form a a first patterned metal layer; removing the patterned photoresist layer; forming a second metal layer on the second surface; irradiating the first surface with an ultraviolet ray by using the first patterned metal layer as a barrier; Performing a baking process on the substrate; performing an etching process on the glass substrate to remove a portion exposed by the first patterned metal layer to form a plurality of blind holes on the first surface; removing the first Forming a metal layer and the second metal layer; forming a conductive layer in the blind holes; and grinding the glass substrate from the second surface toward the first surface to expose a bottom surface of the blind holes, so that The glass substrate has a plurality of conduction . The method of forming a via hole in a glass substrate according to claim 1, wherein the step of performing the etching process on the glass substrate further comprises: immersing the glass substrate in an etching solution and applying an ultrasonic vibration. A method of forming a via hole in a glass substrate as described in claim 1 The method of forming the conductive layer on the first surface further comprises: forming an initial conductive layer on the first surface, the initial conductive layer covering the first surface and respectively filling the blind holes; Except for a portion of the initial conductive layer overlying the first surface to form the conductive layer filled in the blind vias. A method of forming a via hole in a glass substrate, comprising: providing a glass substrate, including a first surface and a second surface opposite to the first surface; forming a first metal layer on the first surface; forming a first pattern And forming a photoresist layer on the first metal layer, the first patterned photoresist layer having a plurality of first openings to expose a portion of the first metal layer; removing portions of the first openings exposed by the first openings a first metal layer to form a first patterned metal layer; removing the first patterned photoresist layer; irradiating the first surface with an ultraviolet light with the first patterned metal layer as a barrier; forming a second metal Layered on the second surface; forming a second patterned photoresist layer on the second metal layer, the second patterned photoresist layer having a plurality of second openings, wherein the second openings respectively correspond to a first opening to expose a corresponding portion of the second metal layer; removing a portion of the second metal layer exposed by the second openings to form a second patterned metal layer; The metal layer is a barrier to irradiate the second surface with an ultraviolet ray; Performing a baking process on the glass substrate; performing an etching process on the glass substrate to remove portions exposed by the first patterned metal layer and the second patterned metal layer to form a through-glass substrate a plurality of via holes; removing the first patterned metal layer and the second patterned metal layer; and forming a conductive layer in the via holes to form a plurality of via holes. The method of forming a via hole in a glass substrate according to claim 4, wherein the step of performing the etching process on the glass substrate further comprises: immersing the glass substrate in an etching solution and applying an ultrasonic vibration. The method of forming a via hole in a glass substrate according to claim 4, wherein the step of forming the patterned conductive layer further comprises: forming a conductive layer covering the first surface and the second surface, respectively, and Filling in the through holes respectively; removing a portion of the conductive layer covering the first surface and the second surface to form the conductive layer filled in the through holes. A method of forming a via hole in a glass substrate, comprising: providing a glass substrate, including a first surface and a second surface opposite to the first surface; forming a first patterned photoresist layer on the first surface, The first patterned photoresist layer has a plurality of first openings to expose a portion of the first surface; the first patterned photoresist layer is used as a barrier to illuminate the first surface with an ultraviolet ray; removing the first patterning Photoresist layer Forming a second patterned photoresist layer on the second surface, the second patterned photoresist layer having a plurality of second openings, wherein the second openings respectively correspond to the first openings to expose corresponding ones a portion of the second surface; irradiating the second surface with an ultraviolet ray by using the second patterned photoresist layer as a barrier; removing the second patterned photoresist layer; performing a baking process on the glass substrate; The glass substrate performs an etching process to remove portions irradiated by the ultraviolet rays to form a plurality of through holes penetrating the glass substrate, and a conductive layer is formed in the through holes to form a plurality of via holes. The method of forming a via hole in a glass substrate according to claim 7, wherein the step of performing the etching process on the glass substrate further comprises: dipping the glass substrate into an etching solution and applying an ultrasonic vibration.