TWI508347B - Method of manufacturing photo-electric device - Google Patents

Method of manufacturing photo-electric device Download PDF

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TWI508347B
TWI508347B TW102106420A TW102106420A TWI508347B TW I508347 B TWI508347 B TW I508347B TW 102106420 A TW102106420 A TW 102106420A TW 102106420 A TW102106420 A TW 102106420A TW I508347 B TWI508347 B TW I508347B
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substrate
alignment
film forming
layer
polarized light
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TW102106420A
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TW201434193A (en
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Hung Yu Wu
Tzu Yu Ting
Jan Tian Lian
Chih Yen Yu
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Chunghwa Picture Tubes Ltd
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Description

光電元件的製造方法Photoelectric element manufacturing method

本發明是有關於一種光電元件的製造方法。The present invention relates to a method of fabricating a photovoltaic element.

一般而言,光電元件(例如液晶顯示器等)是用摩擦配向的技術形成配向層。在摩擦配向技術中,需先將配向液塗佈於光電元件的基板上,然後再固化配向液,以形成準配向層。之後,再利用絨布摩擦準配向層,而形成配向層。然而,由於光電元件的基板表面不一定是平坦的,因此絨布摩擦配置於基板表面的準配向層易造成配向層的不良,進而使光電元件中光學異方向性材料(例如液晶等)的配向狀況不理想。由於摩擦配向技術的缺點,有人開發出了光配向技術,雖然光配向技術可解決摩擦配向技術的問題,但光配向技術所使用的配向液價格昂貴,而使得利用光配向技術製造的光電元件成本過高。In general, photovoltaic elements (e.g., liquid crystal displays, etc.) are formed into a alignment layer by a technique of frictional alignment. In the rubbing alignment technique, the alignment liquid is first coated on the substrate of the photovoltaic element, and then the alignment liquid is cured to form a quasi-alignment layer. Thereafter, the quasi-alignment layer is rubbed with a fleece to form an alignment layer. However, since the surface of the substrate of the photovoltaic element is not necessarily flat, the quasi-alignment layer in which the fleece rubs on the surface of the substrate is liable to cause a defect in the alignment layer, and further, the alignment of the optically anisotropic material (for example, liquid crystal) in the photovoltaic element. not ideal. Due to the shortcomings of the friction alignment technology, light alignment technology has been developed. Although the optical alignment technology can solve the problem of the friction alignment technology, the alignment liquid used in the optical alignment technology is expensive, and the cost of the photovoltaic element manufactured by the optical alignment technology is made. Too high.

有鑑於此,本發明提供一種光電元件的製造方法,其所製造的光電元件成本低且品質佳。In view of the above, the present invention provides a method of manufacturing a photovoltaic element, which has a low cost and good quality.

本發明的一實施例的光電元件製造方法包括下列步驟。提供二基板以及包括光學異方向性材料、成膜材料、配向材料以及光起始劑的混合物。在基板之間填入混合物。令成膜材料以及配向材料於基板上分別形成成膜層以及配向層。配向層以及成膜層位於光學異方向性材料與基板之間。成膜層位於配向層與基板之間。A method of manufacturing a photovoltaic element according to an embodiment of the present invention includes the following steps. A two substrate and a mixture comprising an optically anisotropic material, a film forming material, an alignment material, and a photoinitiator are provided. A mixture is filled between the substrates. The film forming material and the alignment material form a film forming layer and an alignment layer on the substrate, respectively. The alignment layer and the film formation layer are between the optically anisotropic material and the substrate. The film forming layer is located between the alignment layer and the substrate.

在本發明的一實施例中,上述的二基板包括相對的第一基板與第二基板。令配向材料於二基板上形成配向層的方法包括下列步驟。提供第一偏極光以及第二偏極光,其中第一偏極光沿著由第一基板向第二基板的方向傳遞,第二偏極光沿著由第二基板向第一基板的方向傳遞。令第一偏極光與第二偏極光同時照射配向材料。In an embodiment of the invention, the two substrates include opposite first and second substrates. The method of forming the alignment material to form an alignment layer on the two substrates includes the following steps. The first polarized light and the second polarized light are provided, wherein the first polarized light is transmitted along a direction from the first substrate to the second substrate, and the second polarized light is transmitted in a direction from the second substrate to the first substrate. The first polarized light and the second polarized light are simultaneously irradiated to the alignment material.

在本發明的一實施例中,上述的令配向材料於基板上形成配向層的方法包括下列步驟。提供偏極光。令光學異方向性材料在偏極光傳遞方向上的相延遲量實質上為零。於光學異方向性材料在偏極光傳遞方向上的相延遲量實質上為零時,令偏極光照射配向材料。In an embodiment of the invention, the method for forming an alignment layer on an alignment layer comprises the following steps. Provides polarized light. The amount of phase retardation of the optically anisotropic material in the direction of the polarization transfer is substantially zero. When the amount of phase retardation of the optically anisotropic material in the direction of the polarization of the polarized light is substantially zero, the polarized light is irradiated to the alignment material.

在本發明的一實施例中,上述的令光學異方向性材料在偏極光傳遞方向上的相延遲量實質上為零的方法包括下列步驟。對光學異方向性材料的多個光學異方向性分子施加電壓以使每一光學異方向性分子的光軸與偏極光的傳遞方向實質上平行,或加熱光學異方向性材料以使光學異方向性材料的溫度大於或等於光 學異方向性材料的澄清點。In an embodiment of the invention, the method for making the phase retardation of the optically anisotropic material in the direction of polarization of the polarized light substantially zero comprises the following steps. Applying a voltage to a plurality of optically anisotropic molecules of the optically anisotropic material such that the optical axis of each optically isotropic molecule is substantially parallel to the direction of transmission of the polarized light, or heating the optically anisotropic material to cause an optically different direction The temperature of the material is greater than or equal to the light Learn the clarification points of different directional materials.

在本發明的一實施例中,上述的成膜材料為自組裝型高分子材料。令成膜材料於基板上形成成膜層的方法包括:令成膜材料自然地與基板鍵結。In an embodiment of the invention, the film forming material is a self-assembling polymer material. A method of forming a film forming material onto a substrate to form a film forming layer includes: bonding the film forming material to the substrate.

在本發明的一實施例中,上述的令成膜材料於基板上形成成膜層的方法包括:加熱成膜材料,或令光束照射成膜材料。In an embodiment of the invention, the method for forming a film forming material on a substrate comprises: heating a film forming material, or irradiating a light beam with a film forming material.

在本發明的一實施例中,上述的令成膜材料以及配向材料於基板上分別形成成膜層以及配向層的方法包括:提供偏極光;以及令偏極光同時照射成膜材料以及配向材料,其中在偏極光照射下,成膜材料的聚合反應速率實質上大於配向材料的聚合反應速率。In an embodiment of the invention, the method for forming a film forming layer and an alignment layer on the substrate respectively comprises: providing polarized light; and simultaneously irradiating the polarizing light to the film forming material and the alignment material, Wherein, under the irradiation of the polarized light, the polymerization rate of the film-forming material is substantially greater than the polymerization rate of the alignment material.

在本發明的一實施例中,上述的成膜材料的吸收波長範圍與配向膜材料的吸收波長範圍不同。令成膜材料以及配向材料於基板上分別形成成膜層以及配向層的方法包括下列步驟。提供偏極光以及光束,其中偏極光的波長分佈範圍與光束的波長分佈範圍不同。令光束照射成膜材料,以使成膜材料吸收光束而形成成膜層。令偏極光照射配向材料,以使配向材料吸收偏極光而形成配向膜層。In an embodiment of the invention, the film-forming material has an absorption wavelength range different from that of the alignment film material. The method of forming the film forming material and the alignment material on the substrate to form the film forming layer and the alignment layer, respectively, includes the following steps. Polarizing light and a light beam are provided, wherein the polarization distribution of the polarized light is different from the wavelength distribution of the light beam. The light beam is caused to illuminate the film forming material such that the film forming material absorbs the light beam to form a film forming layer. The polarized light is irradiated to the alignment material such that the alignment material absorbs the polarized light to form an alignment film layer.

在本發明的一實施例中,上述的成膜材料表示為下列化學式(1),,其中X為矽或鋅,R1 為鹵基、氨基、丙烯酸酯基或氧烷基團,而氧烷基團可為直鏈型或支鏈型,R2 包括氫、烷基、鹵素以及氰基,m大於或等於1,a及b大於或等於0。成膜材料在混合物中的重量百分比濃度大於0%且小於或等於15%。In an embodiment of the invention, the film forming material is represented by the following chemical formula (1), Wherein X is ruthenium or zinc, R 1 is a halogen group, an amino group, an acrylate group or an oxyalkyl group, and the oxyalkyl group may be a linear or branched type, and R 2 includes a hydrogen, an alkyl group, a halogen, and Cyano, m is greater than or equal to 1, a and b are greater than or equal to zero. The concentration of the film forming material in the mixture is greater than 0% and less than or equal to 15%.

在本發明的一實施例中,上述的配向材料表示為下列化學式(2),,其中R3 包括烷基、鹵素以及腈基,Y表示為下列化學式(3),,其中Z為丙烯酸酯基、腈基或甲基,n大於或等於1。配向材料在混合物中的重量百分比濃度大於或等於0.1%且小於或等於15%。In an embodiment of the invention, the alignment material is represented by the following chemical formula (2), Wherein R 3 includes an alkyl group, a halogen, and a nitrile group, and Y is represented by the following chemical formula (3), Wherein Z is an acrylate group, a nitrile group or a methyl group, and n is greater than or equal to 1. The concentration of the alignment material in the mixture is greater than or equal to 0.1% and less than or equal to 15%.

本發明的另一實施例的光電元件製造方法包括下列步驟。提供相對的第一基板與第二基板以及混合物。混合物包括光學異方向性材料以及配向材料。在第一基板與第二基板之間填入混合物。提供第一偏極光以及第二偏極光,其中第一偏極光沿著 由第一基板向第二基板的方向傳遞,第二偏極光沿著由第二基板向第一基板的方向傳遞。令第一偏極光與第二偏極光同時照射混合物,以使配向材料在第一基板以及第二基板上形成配向層。A method of manufacturing a photovoltaic element according to another embodiment of the present invention includes the following steps. An opposing first substrate and a second substrate and a mixture are provided. The mixture includes an optically anisotropic material as well as an alignment material. A mixture is filled between the first substrate and the second substrate. Providing a first polarized light and a second polarized light, wherein the first polarized light is along The second substrate is transmitted in a direction from the first substrate to the second substrate, and the second polarized light is transmitted in a direction from the second substrate to the first substrate. The first polarized light and the second polarized light are simultaneously irradiated to the mixture such that the alignment material forms an alignment layer on the first substrate and the second substrate.

在本發明的一實施例中,上述的混合物更包括成膜材料。成膜材料為自組裝型高分子材料。光電元件的製造方法更包括:令自組裝型高分子材料自然地與第一基板以及第二基板鍵結而在第一基板以及第二基板上形成成膜層,其中配向層以及成膜層位於光學異方向性材料與第一基板以及第二基板之間,而成膜層位於配向層與第一基板以及第二基板之間。In an embodiment of the invention, the above mixture further comprises a film forming material. The film forming material is a self-assembling polymer material. The method for manufacturing a photovoltaic element further comprises: forming a self-assembled polymer material naturally bonded to the first substrate and the second substrate to form a film formation layer on the first substrate and the second substrate, wherein the alignment layer and the film formation layer are located The optically anisotropic material is interposed between the first substrate and the second substrate, and the formed layer is located between the alignment layer and the first substrate and the second substrate.

在本發明的一實施例中,上述的光電元件的製造方法更包括:加熱成膜材料,以使成膜材料在第一基板以及第二基板上形成成膜層。In an embodiment of the invention, the method of fabricating the photovoltaic element further includes heating the film forming material such that the film forming material forms a film forming layer on the first substrate and the second substrate.

在本發明的一實施例中,上述的混合物更包括成膜材料。第一偏極光與第二偏極光同時照射配向材料以及成膜材料,以使成膜材料在第一基板以及第二基板上形成成膜層,其中在第一偏極光及第二偏極光照射下,成膜材料的聚合反應速率實質上大於配向材料的聚合反應速率。In an embodiment of the invention, the above mixture further comprises a film forming material. The first polarized light and the second polarized light simultaneously illuminate the alignment material and the film forming material, so that the film forming material forms a film forming layer on the first substrate and the second substrate, wherein the first polarized light and the second polarized light are irradiated The polymerization rate of the film-forming material is substantially greater than the polymerization rate of the alignment material.

在本發明的一實施例中,上述的成膜材料的吸收波長範圍與配向膜材料的吸收波長範圍不同,而光電元件的製造方法更包括下列步驟。提供光束,其中光束的波長分佈範圍與第一偏極光的波長分佈範圍以及第二偏極光的波長分佈範圍不同。令光束照射成膜材料,以使成膜材料吸收光束而形成成膜層。In an embodiment of the invention, the absorption wavelength range of the film-forming material is different from the absorption wavelength range of the alignment film material, and the method for manufacturing the photovoltaic element further includes the following steps. A light beam is provided, wherein the wavelength distribution of the light beam is different from the wavelength distribution range of the first polarized light and the wavelength distribution range of the second polarized light. The light beam is caused to illuminate the film forming material such that the film forming material absorbs the light beam to form a film forming layer.

本發明的又一實施例的光電元件的製造方法,包括下列步驟。提供二基板以及混合物。混合物包括光學異方向性材料以及配向材料。在基板之間填入混合物。提供偏極光。令光學異方向性材料在偏極光傳遞方向上的相延遲量實質上為零。於光學異方向性材料在偏極光傳遞方向上的相延遲量實質上為零時,令偏極光照射配向材料,以使配向材料在基板上形成配向層。A method of manufacturing a photovoltaic element according to still another embodiment of the present invention includes the following steps. Two substrates and a mixture are provided. The mixture includes an optically anisotropic material as well as an alignment material. A mixture is filled between the substrates. Provides polarized light. The amount of phase retardation of the optically anisotropic material in the direction of the polarization transfer is substantially zero. When the amount of phase retardation of the optically anisotropic material in the direction of polarization of the polarized light is substantially zero, the polarized light is irradiated to the alignment material such that the alignment material forms an alignment layer on the substrate.

在本發明的一實施例中,上述的令光學異方向性材料在偏極光傳遞方向上的相延遲量實質上為零的方法包括:對光學異方向性材料的多個光學異方向性分子施加電壓以使每一光學異方向性分子的光軸與偏極光的傳遞方向實質上平行,或加熱光學異方向性材料以使光學異方向性材料的溫度大於或等於光學異方向性材料的澄清點。In an embodiment of the invention, the method for making the phase retardation of the optically anisotropic material in the direction of polarization of the polarized light substantially zero comprises: applying a plurality of optically anisotropic molecules to the optically anisotropic material. The voltage is such that the optical axis of each optically heterogeneous molecule is substantially parallel to the direction of transmission of the polarized light, or the optically anisotropic material is heated such that the temperature of the optically anisotropic material is greater than or equal to the clearing point of the optically anisotropic material .

在本發明的一實施例中,上述的混合物更包括成膜材料。成膜材料為自組裝型高分子材料。光電元件的製造方法更包括:令自組裝型高分子材料自然地與基板鍵結而在基板上形成成膜層。In an embodiment of the invention, the above mixture further comprises a film forming material. The film forming material is a self-assembling polymer material. The method of manufacturing a photovoltaic element further includes: forming a self-assembled polymer material naturally bonded to a substrate to form a film formation layer on the substrate.

在本發明的一實施例中,上述的光電元件製造方法更包括:加熱成膜材料以使成膜材料在基板上形成成膜層。In an embodiment of the invention, the method of fabricating the photovoltaic device further includes heating the film forming material to form a film forming material on the substrate.

在本發明的一實施例中,上述的偏極光同時照射配向材料以及成膜材料,以使成膜材料在基板上形成成膜層,其中在偏極光照射下,成膜材料的聚合反應速率實質上大於配向材料的聚合反應速率。In an embodiment of the invention, the polarized light simultaneously illuminates the alignment material and the film forming material, so that the film forming material forms a film forming layer on the substrate, wherein the polymerization rate of the film forming material is substantially under the irradiation of the polarized light. The polymerization rate is greater than the alignment material.

在本發明的一實施例中,上述的成膜材料的吸收波長範圍與配向膜材料的吸收波長範圍不同。光電元件的製造方法更包括下列步驟。提供光束,其中偏極光的波長分佈範圍與光束的波長分佈範圍不同。令光束照射成膜材料,以使成膜材料吸收光束而形成成膜層。In an embodiment of the invention, the film-forming material has an absorption wavelength range different from that of the alignment film material. The manufacturing method of the photovoltaic element further includes the following steps. A light beam is provided in which the wavelength distribution of the polarized light is different from the wavelength distribution of the light beam. The light beam is caused to illuminate the film forming material such that the film forming material absorbs the light beam to form a film forming layer.

基於上述,在本發明一實施例的光電元件的製造方法中,利用包括光學異方向性材料及配向材料的混合物來形成配向層,而不需使用傳統配向液來形成配向層。因此,相較於習知的摩擦配向技術,本發明一實施例的光電元件的製造方法可省去塗佈配向液及摩擦配向的步驟,而避免因摩擦配向所造成的不良,進而提高光電元件的良率。此外,由於本發明一實施例的光電元件的製造方法不需使用習知的配向液,因此相較於習知的摩擦配向技術及光配向,以本發明一實施例的光電元件的製造方法所製造的光電元件更具有低成本的競爭優勢。Based on the above, in the method of manufacturing a photovoltaic element according to an embodiment of the present invention, the alignment layer is formed using a mixture comprising an optically anisotropic material and an alignment material without using a conventional alignment liquid to form the alignment layer. Therefore, compared with the conventional friction alignment technique, the method for manufacturing a photovoltaic element according to an embodiment of the present invention can eliminate the steps of applying the alignment liquid and the rubbing alignment, thereby avoiding defects caused by frictional alignment, thereby improving the photovoltaic element. Yield. In addition, since the method for manufacturing a photovoltaic element according to an embodiment of the present invention does not require the use of a conventional alignment liquid, the method for manufacturing a photovoltaic element according to an embodiment of the present invention is compared to the conventional friction alignment technique and optical alignment. The fabricated optoelectronic components have a lower cost competitive advantage.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.

100‧‧‧光電元件100‧‧‧Optoelectronic components

110‧‧‧混合物110‧‧‧Mixture

112‧‧‧光學異方向性材料112‧‧‧Optical anisotropic materials

112a‧‧‧光學異方向性分子112a‧‧‧Optical heterogeneous molecules

114‧‧‧配向材料114‧‧‧Alignment materials

116‧‧‧成膜材料116‧‧‧ Film forming materials

120、130‧‧‧基板120, 130‧‧‧ substrate

122、132‧‧‧基底122, 132‧‧‧ base

124、134‧‧‧膜層124, 134‧‧ ‧ film layer

140‧‧‧成膜層140‧‧‧ film formation

150‧‧‧配向層150‧‧‧Alignment layer

200‧‧‧加熱板200‧‧‧heating plate

A‧‧‧光軸A‧‧‧ optical axis

1、L3‧‧‧光束1. L3‧‧‧ Beam

L1、L2、L4‧‧‧偏極光L1, L2, L4‧‧‧ polarized light

V‧‧‧電壓源V‧‧‧voltage source

圖1A至圖1F為本發明一實施例的光電元件製造方法的流程示意圖。1A to 1F are schematic flow charts showing a method of manufacturing a photovoltaic element according to an embodiment of the present invention.

圖2示出本發明另一實施例形成成膜層的方法。Figure 2 illustrates a method of forming a film forming layer in accordance with another embodiment of the present invention.

圖3示出本發明又一實施例形成成膜層的方法。Figure 3 illustrates a method of forming a film forming layer in accordance with yet another embodiment of the present invention.

圖4示出本發明另一實施例形成配向層的方法。Figure 4 illustrates a method of forming an alignment layer in accordance with another embodiment of the present invention.

圖5示出本發明又一實施例形成配向層的方法。Figure 5 illustrates a method of forming an alignment layer in accordance with yet another embodiment of the present invention.

圖6A至圖6B示出本發明另一實施例的形成成膜層及配向層的方法。6A to 6B illustrate a method of forming a film formation layer and an alignment layer according to another embodiment of the present invention.

圖7A至圖7B示出本發明又一實施例的形成成膜層及配向層的方法。7A to 7B illustrate a method of forming a film formation layer and an alignment layer according to still another embodiment of the present invention.

圖1A至圖1F為本發明一實施例的光電元件製造方法的流程示意圖。請參照圖1A及圖1B,首先,提供混合物110(繪於圖1A)以及二基板120、130(繪於圖1B)。混合物110包括光學異方向性材料112以及配向材料114。在本實施例中,混合物110可選擇性地包括成膜材料116。混合物110更可包括光起始劑(未繪示)。光學異方向性材料112包括多個光學異方向性分子112a。在本實施例中,光學異方向性材料112例如為液晶材料,而光學異方向性分子112a例如為液晶分子。然而,本發明不限於此,在其他實施例中,光學異方向性材料112亦可為其他種具有光學異方向性(anisotropic)的材料。1A to 1F are schematic flow charts showing a method of manufacturing a photovoltaic element according to an embodiment of the present invention. Referring to FIG. 1A and FIG. 1B, first, a mixture 110 (shown in FIG. 1A) and two substrates 120, 130 (shown in FIG. 1B) are provided. The mixture 110 includes an optically anisotropic material 112 and an alignment material 114. In this embodiment, the mixture 110 can optionally include a film forming material 116. Mixture 110 may further comprise a photoinitiator (not shown). The optically anisotropic material 112 includes a plurality of optically anisotropic molecules 112a. In the present embodiment, the optically anisotropic material 112 is, for example, a liquid crystal material, and the optically anisotropic molecules 112a are, for example, liquid crystal molecules. However, the present invention is not limited thereto, and in other embodiments, the optically anisotropic material 112 may be other materials having optical anisotropic properties.

在本實施例中,基板120包括基底122以及配置於基底122上的膜層124,而基板130包括基底132以及配置於基底132上的膜層134。進一步而言,若欲製造的光電元件為彩色顯示器,基底122上的膜層124例如為畫素陣列層,而基底132上的膜層 134例如為彩色濾光層。然而,本發明不限於此,基板120、130的樣態可視欲製造的光電元件種類而定。舉例而言,若欲製造的光電元件為用於觀賞立體顯示器的眼鏡,基底122、132可為透光基底,而膜層124、134可為透光導電膜(例如銦錫氧化物膜)。In the present embodiment, the substrate 120 includes a substrate 122 and a film layer 124 disposed on the substrate 122, and the substrate 130 includes a substrate 132 and a film layer 134 disposed on the substrate 132. Further, if the photovoltaic element to be fabricated is a color display, the film layer 124 on the substrate 122 is, for example, a pixel array layer, and the film layer on the substrate 132. 134 is, for example, a color filter layer. However, the present invention is not limited thereto, and the form of the substrates 120, 130 may depend on the kind of the photovoltaic element to be manufactured. For example, if the photovoltaic element to be fabricated is glasses for viewing a stereoscopic display, the substrates 122, 132 may be light transmissive substrates, and the film layers 124, 134 may be light transmissive conductive films (eg, indium tin oxide films).

請參照圖1B,接著,在二基板120、130之間填入混合物110。舉例而言,在本實施例中,可用真空注入法將混合物110填入二基板120、130之間。然而,本發明不限於此,在其他實施例中,亦可採用滴下式填入(One drop Fill,ODF)法或其他適當方法將混合物110填入二基板120、130之間。Referring to FIG. 1B, a mixture 110 is then filled between the two substrates 120, 130. For example, in the present embodiment, the mixture 110 can be filled between the two substrates 120, 130 by vacuum injection. However, the present invention is not limited thereto. In other embodiments, the mixture 110 may be filled between the two substrates 120, 130 by a one drop fill (ODF) method or other suitable method.

請參照圖1C及圖1D,接著,在本實施例中,可選擇性地令成膜材料116於基板120、130上形成成膜層140。成膜材料116可為自組裝(self alignment)型高分子材料,而成膜材料116可自然地與基板120、130鍵結而在基板120、130上形成成膜層140。詳言之,自組裝型高分子材料的側鏈基可與基板120、130的膜層124、134表面的氫氧基反應,而與膜層124、134產生鍵結,進而在膜層124、134表面上形成成膜層140。成膜材料116可表示為下列化學式(1),,其中X可為矽(Si)、鋅(Zn)等,R1 可為鹵基、氨基、丙烯酸酯基或氧烷基團(氧烷 基團可為直鏈型或支鏈型)等,R2 可包括氫、烷基、鹵素以及氰基,m大於或等於1,而a及b大於或等於0。成膜材料116在混合物110中的重量百分比(percent by weight)濃度可大於0%且小於或等於15%。但本發明不以此為限,成膜材料116的化學結構及成膜材料116在混合物110中的重量百分比濃度皆可視實際製程的需求調整之。Referring to FIG. 1C and FIG. 1D, then, in this embodiment, the film forming material 116 can be selectively formed on the substrates 120, 130 to form the film forming layer 140. The film forming material 116 may be a self alignment type polymer material, and the film forming material 116 may be naturally bonded to the substrates 120 and 130 to form a film forming layer 140 on the substrates 120 and 130. In detail, the side chain groups of the self-assembled polymer material can react with the hydroxyl groups on the surface of the film layers 124, 134 of the substrates 120, 130, and bond with the film layers 124, 134, and further, at the film layer 124, A film formation layer 140 is formed on the surface of 134. The film forming material 116 can be expressed by the following chemical formula (1), Wherein X may be cerium (Si), zinc (Zn) or the like, and R 1 may be a halogen group, an amino group, an acrylate group or an oxyalkyl group (the oxyalkyl group may be a linear or branched type), and the like. R 2 may include hydrogen, an alkyl group, a halogen, and a cyano group, m is greater than or equal to 1, and a and b are greater than or equal to zero. The concentration of the film forming material 116 in the mixture 110 may be greater than 0% and less than or equal to 15%. However, the present invention is not limited thereto, and the chemical structure of the film-forming material 116 and the weight percent concentration of the film-forming material 116 in the mixture 110 can be adjusted according to the requirements of the actual process.

值得注意的是,配向分子114可透過成膜層140在基板120、130上形成更穩固的配向層。需說明的是,在其他實例中,若配向分子114可直接地在基板120、130上形成穩固的配向層,則混合物110中可省略成膜材料116(即成膜材料116在混合物110中的重量百分比濃度可等於0%),而光電元件製造方法流程中亦可省略形成成膜層140的步驟。It is noted that the alignment molecules 114 can form a more stable alignment layer on the substrates 120, 130 through the film formation layer 140. It should be noted that in other examples, if the alignment molecules 114 can form a stable alignment layer directly on the substrates 120, 130, the film forming material 116 can be omitted in the mixture 110 (ie, the film forming material 116 is in the mixture 110). The weight percentage concentration may be equal to 0%), and the step of forming the film formation layer 140 may be omitted in the photovoltaic element manufacturing method flow.

形成成膜層140的方法不限於上述,在其他實施例中,亦可採用其他適當的方法形成成膜層140,以下配合圖示舉例說明之。圖2示出本發明另一實施例形成成膜層的方法。請參照圖2,在此實施例中,成膜材料116可為熱固型高分子材料。令成膜材料116於基板120、130上形成成膜層140的方法可為:加熱成膜材料116,而形成成膜層140(繪於圖1D)。具體而言,可將基板120、130以及已填入基板120、130之間的混合物110一起置於加熱板200上。此時,如圖2所示,熱固型高分子材料會受熱而與基板120、130反應,並開始沉積在基板120、130表面。在加熱一段適當的時間後,如圖1D所示,熱固型高分子材料便可形成成 膜層140。在此實施例中,加熱成膜材料116的溫度及時間可視成膜材料116的特性而定。舉例而言,加熱成膜材料116的溫度可介於40℃~500℃。此外,加熱成膜材料116的時間更可考量基板120、130間的距離。The method of forming the film formation layer 140 is not limited to the above. In other embodiments, the film formation layer 140 may be formed by other suitable methods, which will be exemplified below with reference to the drawings. Figure 2 illustrates a method of forming a film forming layer in accordance with another embodiment of the present invention. Referring to FIG. 2, in this embodiment, the film forming material 116 may be a thermosetting polymer material. The method of forming the film forming material 116 on the substrate 120, 130 by forming the film forming layer 140 may be: heating the film forming material 116 to form a film forming layer 140 (pictured in FIG. 1D). In particular, the substrates 120, 130 and the mixture 110 that has been filled between the substrates 120, 130 can be placed together on the heating plate 200. At this time, as shown in FIG. 2, the thermosetting polymer material is heated to react with the substrates 120 and 130, and starts to deposit on the surfaces of the substrates 120 and 130. After heating for a suitable period of time, as shown in FIG. 1D, a thermosetting polymer material can be formed. Film layer 140. In this embodiment, the temperature and time at which the film forming material 116 is heated may depend on the characteristics of the film material 116. For example, the temperature at which the film forming material 116 is heated may range from 40 ° C to 500 ° C. In addition, the time between heating the film forming material 116 can be considered as the distance between the substrates 120, 130.

圖3示出本發明又一實施例形成成膜層的方法。請參照圖3,在此實施例中,成膜材料116可為光固型高分子材料。令成膜材料116於基板120、130上形成成膜層140的方法可為:令光束1照射成膜材料116,而形成成膜層140(繪於圖1D)。在此實施例中,光束1可為線性偏極光,但本發明不限於此,在其他實施例中,光束1可為非偏極光。在此實施例中,光束1可沿著基板120向基板130的方向傳遞,並先穿過基板120後再照射至成膜材料116。換言之,光束1可穿過基板120而照射至成膜材料116。光束1的波長分布範圍在穿過基板120後變化不大,而使成膜材料116可接收具有適當波長分布的光束1,進而使成膜層140的成膜品質良好。光束1的波長、光束1的照射強度及光束1的照射時間可視光固型高分子材料的特性而定。光束1的波長、光束1的照射強度及光束1的照射時間更可考量基板120、130間的吸收光譜以及基板120、130間的距離而定。舉例而言,光束1的波長可在200奈米(nm)至400奈米(nm),而光束1的照射強度可大於或等於5毫焦耳每平方公分(mj/cm2 )。Figure 3 illustrates a method of forming a film forming layer in accordance with yet another embodiment of the present invention. Referring to FIG. 3, in this embodiment, the film forming material 116 may be a photo-curable polymer material. The film forming material 116 is formed on the substrates 120, 130 by forming the film forming layer 140 by irradiating the light beam 1 with the film forming material 116 to form a film forming layer 140 (drawn in FIG. 1D). In this embodiment, the light beam 1 may be linearly polarized light, but the invention is not limited thereto, and in other embodiments, the light beam 1 may be non-polarized. In this embodiment, the light beam 1 can be transmitted along the substrate 120 in the direction of the substrate 130 and first passed through the substrate 120 and then irradiated to the film forming material 116. In other words, the light beam 1 can pass through the substrate 120 to illuminate the film forming material 116. The wavelength distribution of the light beam 1 does not change much after passing through the substrate 120, so that the film forming material 116 can receive the light beam 1 having an appropriate wavelength distribution, thereby making the film forming quality of the film forming layer 140 good. The wavelength of the light beam 1, the irradiation intensity of the light beam 1, and the irradiation time of the light beam 1 may depend on the characteristics of the light-solid polymer material. The wavelength of the light beam 1, the irradiation intensity of the light beam 1, and the irradiation time of the light beam 1 can be determined by considering the absorption spectrum between the substrates 120 and 130 and the distance between the substrates 120 and 130. For example, beam 1 may have a wavelength between 200 nanometers (nm) and 400 nanometers (nm), and beam 1 may have an illumination intensity greater than or equal to 5 millijoules per square centimeter (mj/cm 2 ).

請參照圖1E及圖1F,接著,令配向材料114於基板120、130上形成配向層150(繪於圖1F)。在本實施例中,配向材料114 可為光固型高分子材料。配向材料114可表示為下列化學式(2),,其中R3 包括烷基、鹵素以及腈基,Y表示可為下列化學式(3),,其中Z包括丙烯酸酯基、腈基或甲基,n大於或等於1。配向材料114在混合物110中的重量百分比濃度可大於或等於0.1%且小於或等於15%。但本發明不以此為限,配向材料114的化學結構及配向材料114在混合物110中的重量百分比濃度皆可視實際製程的需求調整之。Referring to FIG. 1E and FIG. 1F, the alignment material 114 is then formed on the substrates 120, 130 to form an alignment layer 150 (shown in FIG. 1F). In this embodiment, the alignment material 114 may be a photo-curable polymer material. The alignment material 114 can be expressed by the following chemical formula (2), Wherein R 3 includes an alkyl group, a halogen, and a nitrile group, and Y represents a chemical formula (3): Wherein Z comprises an acrylate group, a nitrile group or a methyl group, and n is greater than or equal to 1. The weight percent concentration of alignment material 114 in mixture 110 can be greater than or equal to 0.1% and less than or equal to 15%. However, the present invention is not limited thereto, and the chemical structure of the alignment material 114 and the weight percentage concentration of the alignment material 114 in the mixture 110 can be adjusted according to the requirements of the actual process.

在本實施例中,令配向材料114於基板120、130上形成配向層150的方法可包括下列步驟。如圖1E所示,首先,提供偏極光L1以及偏極光L2,其中偏極光L1沿著由基板120向基板130的方向傳遞,而偏極光L2沿著由基板130向基板120的方向傳遞。接著,令偏極光L1與偏極光L2同時照射配向材料114,以於基板120、130上形成配向層150(繪於圖1F)。如圖1F所示,配向層150形成後,光學異方向性材料112,便可依所設定的配向方向一致地排列,進而完成本實施例的光電元件100。在光電元件100中,配向層150以及成膜層140位於光學異方向性材料112與基板120、130之間,而成膜層140位於配向層150與基板120、130之間。值得一提的是,在本實施例中,由於偏極光L1、L2是分別從基板120、130所在二側同時照射配向材料114,因此靠近 基板120、130表面的配向材料114皆可受到均勻的偏極光L1、L2照射,而使配向層150的成膜品質良好。In the present embodiment, the method of forming the alignment material 114 on the substrate 120, 130 to form the alignment layer 150 may include the following steps. As shown in FIG. 1E, first, polarized light L1 and polarized light L2 are provided, wherein the polarized light L1 is transmitted in the direction from the substrate 120 toward the substrate 130, and the polarized light L2 is transmitted in the direction from the substrate 130 toward the substrate 120. Next, the polarized light L1 and the polarized light L2 are simultaneously irradiated with the alignment material 114 to form an alignment layer 150 on the substrates 120 and 130 (shown in FIG. 1F). As shown in FIG. 1F, after the alignment layer 150 is formed, the optically anisotropic material 112 can be aligned in accordance with the set alignment direction, thereby completing the photovoltaic element 100 of the present embodiment. In the photovoltaic element 100, the alignment layer 150 and the film formation layer 140 are located between the optically anisotropic material 112 and the substrates 120, 130, and the formation layer 140 is located between the alignment layer 150 and the substrates 120, 130. It should be noted that, in this embodiment, since the polarized lights L1 and L2 are simultaneously irradiated with the alignment material 114 from the two sides of the substrates 120 and 130, respectively, The alignment materials 114 on the surfaces of the substrates 120 and 130 can be irradiated with uniform polarized light L1 and L2, and the film formation quality of the alignment layer 150 is good.

在本實施例中,偏極光L1、L2可為線性偏極光。線性偏極光的偏極方向可視欲形成的配向方向而定。線性偏極光的偏極方向可與所形成的配向方向平行或垂直。舉例而言,若所欲製造的光電元件為扭轉向列(twisted nematic,TN)型液晶顯示器,則偏極光L1、L2的偏極方向可實質上互相垂直。若所欲製造的光電元件為電控雙折射(electrically controlled birefringence,ECB)型、橫向電場驅動(In-Plane Switching,IPS)型或邊緣電場驅動(fringe field switching,FFS)型液晶顯示器,則偏極光L1、L2的偏極方向可實質上互相平行。此外,偏極光L1、L2的波長、偏極光L1、L2的照射強度及偏極光L1、L2的照射時間可視配向材料114的特性而定。偏極光L1、L2的波長、偏極光L1、L2的照射強度及偏極光L1、L2的照射時間更可考量基板120、130間的吸收光譜及基板120、130間的距離。舉例而言,偏極光L1、L2的波長可在200奈米(nm)至400奈米(nm),而偏極光L1、L2的照射強度可大於或等於5毫焦耳每平方公分(mj/cm2 )。In this embodiment, the polarized lights L1, L2 may be linear polarized light. The direction of the polarization of the linear polarized light depends on the direction of the alignment to be formed. The direction of the polarization of the linearly polarized light may be parallel or perpendicular to the direction of alignment formed. For example, if the photovoltaic element to be fabricated is a twisted nematic (TN) type liquid crystal display, the polarization directions of the polarized lights L1, L2 may be substantially perpendicular to each other. If the optoelectronic component to be fabricated is an electrically controlled birefringence (ECB) type, an In-Plane Switching (IPS) type or a fringe field switching (FFS) type liquid crystal display, The polarization directions of the aurora L1, L2 may be substantially parallel to each other. Further, the wavelengths of the polarized lights L1 and L2, the irradiation intensity of the polarized lights L1 and L2, and the irradiation time of the polarized lights L1 and L2 may be determined by the characteristics of the alignment material 114. The wavelengths of the polarized lights L1 and L2, the irradiation intensity of the polarized lights L1 and L2, and the irradiation time of the polarized lights L1 and L2 can also measure the absorption spectrum between the substrates 120 and 130 and the distance between the substrates 120 and 130. For example, the polarized light L1, L2 may have a wavelength of 200 nanometers (nm) to 400 nanometers (nm), and the polarized light L1, L2 may have an intensity greater than or equal to 5 millijoules per square centimeter (mj/cm). 2 ).

形成配向層150的方法不限於上述,在其他實施例中,亦可採用其他適當的方法形成品質良好的配向層150。舉例而言,在其他實施例中,可提供偏極光,並令光學異方向性材料在所述偏極光傳遞方向上的相延遲量(retardation)實質上為零。並且,於光學異方向性材料在所述偏極光傳遞方向上的相延遲量實質上 為零時,令此偏極光照射配向材料,以形成配向層。以下配合圖示具體說明之。The method of forming the alignment layer 150 is not limited to the above, and in other embodiments, other suitable methods may be employed to form the alignment layer 150 of good quality. For example, in other embodiments, polarized light can be provided and the phase retardation of the optically anisotropic material in the direction of the polarization of the polarized light is substantially zero. Moreover, the amount of phase retardation in the direction of the polarization transfer of the optically anisotropic material is substantially When it is zero, the polarized light is irradiated to the alignment material to form an alignment layer. The following is a detailed description with the illustration.

圖4示出本發明另一實施例形成配向層的方法。請參照圖4,在此實施例中,形成配向層的方法包括下列步驟。提供偏極光L1,偏極光L1可為線性偏極光。令光學異方向性材料112在所述偏極光L1傳遞方向上的相延遲量(retardation)實質上為零。具體而言,可對光學異方向性材料112的多個光學異方向性分子112a施加電壓以使每一光學異方向性分子112a的光軸A與偏極光L1的傳遞方向實質上平行。然後,在每一光學異方向性分子112a的光軸A與偏極光L1的傳遞方向實質上平行時,令偏極光L1照射配向材料114,以形成配向層150(繪於圖1F)。如圖1F所示,在配向層150形成後,移除電壓源V,光學異方向性材料112便可順著設定的配向方向排列。Figure 4 illustrates a method of forming an alignment layer in accordance with another embodiment of the present invention. Referring to FIG. 4, in this embodiment, the method of forming the alignment layer includes the following steps. The polarized light L1 is provided, and the polarized light L1 can be linear polarized light. The phase retardation of the optically anisotropic material 112 in the direction of transmission of the polarized light L1 is substantially zero. Specifically, a voltage may be applied to the plurality of optically anisotropic molecules 112a of the optically anisotropic material 112 such that the optical axis A of each of the optically isotropic molecules 112a is substantially parallel to the direction of transmission of the polarized light L1. Then, when the optical axis A of each optically anisotropic molecule 112a is substantially parallel to the direction of transmission of the polarized light L1, the polarized light L1 is caused to illuminate the alignment material 114 to form the alignment layer 150 (shown in FIG. 1F). As shown in FIG. 1F, after the alignment layer 150 is formed, the voltage source V is removed, and the optically anisotropic material 112 can be aligned along the set alignment direction.

值得一提的是,在圖4中,由於偏極光L1照射配向材料114時每一光學異方向性分子112a的光軸A與偏極光L1的傳遞方向是實質上平行,因此偏極光L1的偏振方向不易受到光學異方向性材料112的影響,而使所有配向材料114皆可感受到同一偏振方向的偏極光L1。這樣一來,配向材料114便可在基板120、130上形成品質良好的配向層150,進而使光學異方向性材料112的配向狀況良好。It is to be noted that, in FIG. 4, since the polarization direction L1 is substantially parallel to the direction of transmission of the optical axis A and the polarization light L1 of the optical anisotropic molecules 112a when the polarized light L1 is irradiated with the alignment material 114, the polarization of the polarized light L1 is The direction is less susceptible to the optical anisotropic material 112, and all of the alignment materials 114 can sense the polarized light L1 of the same polarization direction. In this way, the alignment material 114 can form the alignment layer 150 of good quality on the substrates 120 and 130, and the alignment of the optically anisotropic material 112 can be improved.

圖5示出本發明又一實施例形成配向層的方法。請參照圖5,在此實施例中,形成配向層的方法包括下列步驟。提供偏極 光L1。令光學異方向性材料112在所述偏極光L1傳遞方向上的相延遲量實質上為零。詳言之,可加熱光學異方向性材料112以使光學異方向性材料112的溫度大於或等於光學異方向性材料112的澄清點。光學異方向性材料112的溫度大於或等於光學異方向性材料112的澄清點時,光學異方向性材料112轉變為光學等方向性(isotropic)材料。然後,在光學異方向性材料112轉變為光學等方向性材料時,令偏極光L1照射配向材料114,以形成配向層150(繪於圖1F)。如圖1F所示,在配向層150形成後,可令光學異方向性材料112的溫度低於光學異方向性材料112的澄清點,此時,光學異方向性材料112便可順著設定的配向方向排列。Figure 5 illustrates a method of forming an alignment layer in accordance with yet another embodiment of the present invention. Referring to FIG. 5, in this embodiment, the method of forming the alignment layer includes the following steps. Providing partial polarity Light L1. The amount of phase retardation of the optically anisotropic material 112 in the direction of transmission of the polarized light L1 is substantially zero. In particular, the optically anisotropic material 112 can be heated such that the temperature of the optically anisotropic material 112 is greater than or equal to the clearing point of the optically anisotropic material 112. When the temperature of the optically anisotropic material 112 is greater than or equal to the clearing point of the optically anisotropic material 112, the optically anisotropic material 112 transforms into an optical isotropic material. Then, when the optically anisotropic material 112 is converted into an optically isotropic material, the polarized light L1 is caused to illuminate the alignment material 114 to form the alignment layer 150 (shown in FIG. 1F). As shown in FIG. 1F, after the alignment layer 150 is formed, the temperature of the optical anisotropic material 112 can be made lower than the clearing point of the optical anisotropic material 112. At this time, the optical anisotropic material 112 can be set along the line. Arrange in the direction of alignment.

在圖5中,由於偏極光L1照射配向材料114時,光學異方向性材料112已轉變為光學等方向性材料,因此偏極光L1的偏振方向不易受到光學異方向性材料112的影響,而使所有配向材料114皆可感受到同一偏振方向的偏極光L1。這樣一來,配向材料114便可在基板120、130上形成品質良好的配向層150,進而使光學異方向性材料112的配向狀況良好。In FIG. 5, since the polarized light L1 is irradiated with the alignment material 114, the optically anisotropic material 112 has been converted into an optical isotropic material, and thus the polarization direction of the polarized light L1 is not easily affected by the optical anisotropic material 112. All of the alignment materials 114 can sense the polarized light L1 of the same polarization direction. In this way, the alignment material 114 can form the alignment layer 150 of good quality on the substrates 120 and 130, and the alignment of the optically anisotropic material 112 can be improved.

在本實施例中,以成膜材料116是自組裝型高分子材料而配向材料114是光固型材料為例說明,在其他實施例中,成膜材料116及配向材料114亦可皆為光固型材料。以下配合圖示詳細說明當成膜材料116及配向材料114皆為光固型材料時,成膜層140及配向層150的形成方式。圖6A至圖6B示出本發明另一實施例的形成成膜層及配向層的方法。請參照圖6A及圖6B,提 供偏極光L1,並令偏極光L1同時照射成膜材料116以及配向材料114,以形成成膜層140及配向層150。偏極光L1可為線性偏極光。值得注意的是,在此實施例中,在偏極光L1照射下,成膜材料的聚合反應速率實質上可大於配向材料114的聚合反應速率,以使成膜材料116在配向層150完全形成前先形成成膜層140,而使配向材料114可透過成膜層140在基板120、130上形成穩固的配向層150。此外,在此實施例中,於照射成膜材料116以及配向材料114時,亦可同時應用與圖1E、圖4、圖5對應的減少光學異方向性材料112對偏極光L1影響的方法,以使成膜層140及配向層150的成膜品質更佳。相關的說明請參照與圖1E、圖4、圖5對應的段落,於此便不再重述。In this embodiment, the film forming material 116 is a self-assembling polymer material and the alignment material 114 is a photo-curable material. In other embodiments, the film forming material 116 and the alignment material 114 may also be light. Solid material. Hereinafter, the formation of the film formation layer 140 and the alignment layer 150 when the film formation material 116 and the alignment material 114 are both photo-curable materials will be described in detail with reference to the drawings. 6A to 6B illustrate a method of forming a film formation layer and an alignment layer according to another embodiment of the present invention. Please refer to FIG. 6A and FIG. 6B, The polarized light L1 is supplied, and the polarized light L1 is simultaneously irradiated to the film forming material 116 and the alignment material 114 to form the film forming layer 140 and the alignment layer 150. The polarized light L1 can be linear polarized light. It should be noted that in this embodiment, under the irradiation of the polarized light L1, the polymerization rate of the film-forming material may be substantially greater than the polymerization rate of the alignment material 114, so that the film-forming material 116 is completely formed before the alignment layer 150 is formed. The film formation layer 140 is formed first, and the alignment material 114 is permeable to the film formation layer 140 to form a stable alignment layer 150 on the substrates 120, 130. In addition, in this embodiment, when the film forming material 116 and the alignment material 114 are irradiated, the method of reducing the influence of the optical anisotropic material 112 on the polarized light L1 corresponding to FIGS. 1E, 4, and 5 may be simultaneously applied. The film formation quality of the film formation layer 140 and the alignment layer 150 is further improved. For related explanation, please refer to the paragraphs corresponding to FIG. 1E, FIG. 4, and FIG. 5, and the description will not be repeated here.

圖7A至圖7B示出本發明又一實施例的形成成膜層及配向層的方法。當成膜材料116及配向材料114皆為光固型材料且成膜材料116及配向材料114的吸收波長範圍不同時,如圖7A所示,可先以具有成膜材料116(圖7A未繪示)吸收波長範圍的光束L3(光束L3可以是非偏極光或偏極光)照射成膜材料116,以使成膜材料116形成成膜層140。然後,如圖7B所示,再以具有配向材料114(繪於圖7A)吸收波長範圍的偏極光L4(例如線偏極光)照射配向材料114,以使配向材料114形成配向層150。在此實施例中,在照射配向材料114時,亦可同時應用與圖1E、圖4、圖5對應的減少光學異方向性材料112對偏極光L1影響的方法,以使成膜層140及配向層150的成膜品質更佳。相關的說明 請參照與圖1E、圖4、圖5對應的段落,於此亦不再重述。7A to 7B illustrate a method of forming a film formation layer and an alignment layer according to still another embodiment of the present invention. When the film forming material 116 and the alignment material 114 are both photo-curable materials and the absorption wavelength ranges of the film-forming material 116 and the alignment material 114 are different, as shown in FIG. 7A, the film-forming material 116 may be first formed (not shown in FIG. 7A). The light beam L3 of the absorption wavelength range (the light beam L3 may be non-polarized or polarized light) is irradiated to the film forming material 116 to form the film forming material 116 into the film forming layer 140. Then, as shown in FIG. 7B, the alignment material 114 is irradiated with polarized light L4 (for example, linearly polarized light) having an absorption wavelength range of the alignment material 114 (drawn in FIG. 7A) to cause the alignment material 114 to form the alignment layer 150. In this embodiment, when the alignment material 114 is irradiated, the method of reducing the influence of the optical anisotropic material 112 on the polarized light L1 corresponding to FIG. 1E, FIG. 4, and FIG. 5 may be simultaneously applied to make the film formation layer 140 and The film formation quality of the alignment layer 150 is better. Related instructions Please refer to the paragraphs corresponding to FIG. 1E, FIG. 4, and FIG. 5, and will not be repeated here.

綜上所述,在本發明一實施例的光電元件的製造方法中,利用包括光學異方向性材料及配向材料的混合物來形成配向層,而不需使用傳統配向液來形成配向層。因此,相較於習知的摩擦配向技術,本發明一實施例的光電元件的製造方法可省去塗佈配向液及摩擦配向的步驟,而避免因摩擦配向所造成的不良,進而提高光電元件的良率。此外,由於本發明一實施例的光電元件的製造方法不需使用習知的配向液,因此相較於習知的摩擦配向技術及光配向,以本發明一實施例的光電元件的製造方法所製造的光電元件更具有低成本的競爭優勢。As described above, in the method of manufacturing a photovoltaic element according to an embodiment of the present invention, the alignment layer is formed by using a mixture comprising an optically anisotropic material and an alignment material without using a conventional alignment liquid to form an alignment layer. Therefore, compared with the conventional friction alignment technique, the method for manufacturing a photovoltaic element according to an embodiment of the present invention can eliminate the steps of applying the alignment liquid and the rubbing alignment, thereby avoiding defects caused by frictional alignment, thereby improving the photovoltaic element. Yield. In addition, since the method for manufacturing a photovoltaic element according to an embodiment of the present invention does not require the use of a conventional alignment liquid, the method for manufacturing a photovoltaic element according to an embodiment of the present invention is compared to the conventional friction alignment technique and optical alignment. The fabricated optoelectronic components have a lower cost competitive advantage.

此外,在本發明另一實施例的光電元件的製造方法中,偏極光是分別從二基板所在二側同時照射配向材料,因此靠近二基板表面的配向材料皆可受到均勻的偏極光照射,而使配向層的品質良好。In addition, in the method for manufacturing a photovoltaic device according to another embodiment of the present invention, the polarized light is simultaneously irradiated with the alignment material from the two sides of the two substrates, so that the alignment materials close to the surface of the two substrates are uniformly irradiated by the polarized light. The quality of the alignment layer is good.

再者,在本發明一實施例的光電元件的製造方法中,在以偏極光照射配向材料時,同時使令光學異方向性材料在此偏極光傳遞方向上的相延遲量實質上為零。如此一來,此偏極光的偏振方向便不易受到光學異方向性材料的影響,而使所有配向材料皆可感受到同一偏振方向的偏極光,進而使配向材料所形成的配向層具有良好的配向能力。Further, in the method of manufacturing a photovoltaic element according to an embodiment of the present invention, when the alignment material is irradiated with polarized light, the phase retardation amount of the optical anisotropic material in the polarization direction of the polarization is substantially zero. In this way, the polarization direction of the polarized light is not easily affected by the optical anisotropic material, so that all the alignment materials can sense the polarized light of the same polarization direction, and the alignment layer formed by the alignment material has a good alignment. ability.

110‧‧‧混合物110‧‧‧Mixture

112‧‧‧光學異方向性材料112‧‧‧Optical anisotropic materials

114‧‧‧配向材料114‧‧‧Alignment materials

120、130‧‧‧基板120, 130‧‧‧ substrate

122、132‧‧‧基底122, 132‧‧‧ base

124、134‧‧‧膜層124, 134‧‧ ‧ film layer

140‧‧‧成膜層140‧‧‧ film formation

L1、L2‧‧‧偏極光L1, L2‧‧‧ Aurora

Claims (18)

一種光電元件的製造方法,包括:提供二基板以及一混合物,該混合物包括一光學異方向性材料、一成膜材料、一配向材料以及一光起始劑;在該些基板之間填入該混合物;以及令該成膜材料以及該配向材料於該些基板上分別形成一成膜層以及一配向層,其中該配向層以及該成膜層位於該光學異方向性材料與該些基板之間,而該成膜層位於該配向層與該些基板之間,其中令該配向材料於該些基板上形成該配向層的方法包括:提供一偏極光;令該光學異方向性材料在該偏極光傳遞方向上的相延遲量實質上為零;以及於該光學異方向性材料在該偏極光傳遞方向上的相延遲量實質上為零時,令該偏極光照射該配向材料。 A method of manufacturing a photovoltaic element, comprising: providing a two substrate and a mixture, the mixture comprising an optically anisotropic material, a film forming material, an alignment material, and a photoinitiator; filling the substrate between the substrates a film forming material and the alignment material respectively form a film forming layer and an alignment layer on the substrates, wherein the alignment layer and the film forming layer are located between the optical anisotropic material and the substrates And the film forming layer is located between the alignment layer and the substrate, wherein the method for forming the alignment layer on the substrate comprises: providing a polarized light; and causing the optical anisotropic material to be at the bias The amount of phase retardation in the direction of the apolar light transmission is substantially zero; and when the amount of phase retardation of the optically anisotropic material in the direction of the polarization of the polarized light is substantially zero, the polarized light is caused to illuminate the alignment material. 如申請專利範圍第1項所述的光電元件的製造方法,其中該些基板包括相對的一第一基板與一第二基板,而令該配向材料於該些基板上形成該配向層的方法包括:提供一第一偏極光以及一第二偏極光,其中該第一偏極光沿著由該第一基板向該第二基板的方向傳遞,該第二偏極光沿著由該第二基板向該第一基板的方向傳遞;以及令該第一偏極光與該第二偏極光同時照射該配向材料。 The method for manufacturing a photovoltaic device according to the first aspect of the invention, wherein the substrate comprises an opposite first substrate and a second substrate, and the method for forming the alignment layer on the substrate comprises: Providing a first polarized light and a second polarized light, wherein the first polarized light is transmitted along a direction from the first substrate to the second substrate, and the second polarized light is directed to the second substrate Transmitting the direction of the first substrate; and causing the first polarized light and the second polarized light to simultaneously illuminate the alignment material. 如申請專利範圍第1項所述的光電元件的製造方法,其中令該光學異方向性材料在該偏極光傳遞方向上的相延遲量實質上為零的方法包括:對該光學異方向性材料的多個光學異方向性分子施加電壓以使每一該光學異方向性分子的光軸與該偏極光的傳遞方向實質上 平行,或加熱該光學異方向性材料以使該光學異方向性材料的溫度大於或等於該光學異方向性材料的澄清點。 The method of manufacturing a photovoltaic element according to claim 1, wherein the method of making the phase retardation amount of the optically anisotropic material in the direction of the polarization of the polarization is substantially zero comprises: the optically anisotropic material Applying a voltage to the plurality of optically anisotropic molecules such that the optical axis of each of the optically anisotropic molecules and the direction of transmission of the polarized light are substantially Parallel, or heating the optically anisotropic material such that the temperature of the optically anisotropic material is greater than or equal to the clearing point of the optically anisotropic material. 如申請專利範圍第1項所述的光電元件的製造方法,其中該成膜材料為一自組裝型高分子材料,而令該成膜材料於該些基板上形成該成膜層的方法包括:令該成膜材料自然地與該些基板鍵結。 The method for manufacturing a photovoltaic device according to claim 1, wherein the film-forming material is a self-assembled polymer material, and the method for forming the film-forming material on the substrate comprises: The film forming material is naturally bonded to the substrates. 如申請專利範圍第1項所述的光電元件的製造方法,其中令該成膜材料於該些基板上形成該成膜層的方法包括:加熱該成膜材料,或令一光束照射該成膜材料。 The method for manufacturing a photovoltaic device according to the above aspect, wherein the method for forming the film-forming material on the substrate comprises: heating the film-forming material, or irradiating a film with the light beam; material. 如申請專利範圍第1項所述的光電元件的製造方法,其中令該成膜材料以及該配向材料於該些基板上分別形成該成膜層以及該配向層的方法包括:提供一偏極光;以及令該偏極光同時照射該成膜材料以及該配向材料,其中在該偏極光照射下,該成膜材料的聚合反應速率實質上大於該配向材料的聚合反應速率。 The method for manufacturing a photovoltaic device according to claim 1, wherein the method for forming the film-forming material and the alignment material on the substrate to form the film-forming layer and the alignment layer respectively comprises: providing a polarized light; And causing the polarized light to simultaneously illuminate the film forming material and the alignment material, wherein the polymerization rate of the film forming material is substantially greater than the polymerization rate of the alignment material under the irradiation of the polarized light. 如申請專利範圍第1項所述的光電元件的製造方法,其中該成膜材料的吸收波長範圍與該配向膜材料的吸收波長範圍不同,而令該成膜材料以及該配向材料於該些基板上分別形成該成膜層以及該配向層的方法包括:提供一偏極光以及一光束,其中該偏極光的波長分佈範圍與該光束的波長分佈範圍不同;令該光束照射該成膜材料,以使該成膜材料吸收該光束而形成該成膜層;以及令該偏極光照射該配向材料,以使該配向材料吸收該偏極光而形成該配向膜層。 The method for manufacturing a photovoltaic device according to the first aspect of the invention, wherein the film-forming material has an absorption wavelength range different from an absorption wavelength range of the alignment film material, and the film-forming material and the alignment material are on the substrates. The method for forming the film forming layer and the alignment layer respectively comprises: providing a polarized light and a light beam, wherein the polarized light has a wavelength distribution range different from a wavelength distribution range of the light beam; and the light beam is irradiated to the film forming material to The film forming material is caused to absorb the light beam to form the film forming layer; and the polarized light is irradiated to the alignment material such that the alignment material absorbs the polarized light to form the alignment film layer. 一種光電元件的製造方法,包括:提供相對的一第一基板與一第二基板以及一混合物,該混合物包括一光學異方向性材料以及一配向材料;在該第一基板與該第二基板之間填入該混合物;提供一第一偏極光以及一第二偏極光,其中該第一偏極光沿著由該第一基板向該第二基板的方向傳遞,該第二偏極光沿著由該第二基板向該第一基板的方向傳遞;令該第一偏極光與該第二偏極光同時照射該混合物,以使該配向材料在該第一基板以及該第二基板上形成一配向層。 A method of manufacturing a photovoltaic element, comprising: providing a first substrate and a second substrate and a mixture, the mixture comprising an optically anisotropic material and an alignment material; and the first substrate and the second substrate Filling in the mixture; providing a first polarized light and a second polarized light, wherein the first polarized light is transmitted along a direction from the first substrate to the second substrate, and the second polarized light is along The second substrate is transferred to the first substrate; the first polarized light and the second polarized light are simultaneously irradiated to the mixture, so that the alignment material forms an alignment layer on the first substrate and the second substrate. 如申請專利範圍第8項所述的光電元件的製造方法,其中該混合物更包括一成膜材料,該成膜材料為一自組裝型高分子材料,而該光電元件的製造方法更包括:令該自組裝型高分子材料自然地與該第一基板以及該第二基板鍵結而在該第一基板以及該第二基板上形成一成膜層,其中該配向層以及該成膜層位於該光學異方向性材料與該第一基板以及該第二基板之間,而該成膜層位於該配向層與該第一基板以及該第二基板之間。 The method of manufacturing a photovoltaic element according to claim 8, wherein the mixture further comprises a film forming material, the film forming material is a self-assembling polymer material, and the manufacturing method of the photovoltaic element further comprises: The self-assembled polymer material is naturally bonded to the first substrate and the second substrate to form a film formation layer on the first substrate and the second substrate, wherein the alignment layer and the film formation layer are located The optically anisotropic material is disposed between the first substrate and the second substrate, and the film forming layer is located between the alignment layer and the first substrate and the second substrate. 如申請專利範圍第8項所述的光電元件的製造方法,其中該混合物更包括一成膜材料,而該光電元件的製造方法更包括:加熱該成膜材料,以使該成膜材料在該第一基板以及該第二基板上形成一成膜層,其中該配向層以及該成膜層位於該光學異方向性材料與該第一基板以及該第二基板之間,而該成膜層位於該配向層與該第一基板以及該第二基板之間。 The method of manufacturing a photovoltaic element according to claim 8, wherein the mixture further comprises a film forming material, and the method of manufacturing the photovoltaic element further comprises: heating the film forming material such that the film forming material is Forming a film formation layer on the first substrate and the second substrate, wherein the alignment layer and the film formation layer are located between the optical anisotropic material and the first substrate and the second substrate, and the film formation layer is located The alignment layer is between the first substrate and the second substrate. 如申請專利範圍第8項所述的光電元件的製造方法,其中該混合物更包括一成膜材料,該第一偏極光與該第二偏極光同時照射該配向材料以及該成膜材料,以使該成膜材料在該第一基 板以及該第二基板上形成一成膜層,其中在該第一偏極光及該第二偏極光照射下,該成膜材料的聚合反應速率實質上大於該配向材料的聚合反應速率,該配向層以及該成膜層位於該光學異方向性材料與該第一基板以及該第二基板之間,而該成膜層位於該配向層與該第一基板以及該第二基板之間。 The method of manufacturing a photovoltaic element according to claim 8, wherein the mixture further comprises a film forming material, and the first polarized light and the second polarized light simultaneously illuminate the alignment material and the film forming material to The film forming material is at the first base Forming a film formation layer on the plate and the second substrate, wherein the polymerization rate of the film forming material is substantially greater than the polymerization rate of the alignment material under the irradiation of the first polarized light and the second polarized light, the alignment The layer and the film forming layer are located between the optically anisotropic material and the first substrate and the second substrate, and the film forming layer is located between the alignment layer and the first substrate and the second substrate. 如申請專利範圍第8項所述的光電元件的製造方法,其中該混合物更包括一成膜材料,該成膜材料的吸收波長範圍與該配向膜材料的吸收波長範圍不同,而該光電元件的製造方法更包括:提供一光束,其中該光束的波長分佈範圍與該第一偏極光的波長分佈範圍以及該第二偏極光的波長分佈範圍不同;以及令該光束照射該成膜材料,以使該成膜材料吸收該光束而形成該成膜層,其中該配向層以及該成膜層位於該光學異方向性材料與該第一基板以及該第二基板之間,而該成膜層位於該配向層與該第一基板以及該第二基板之間。 The method of manufacturing a photovoltaic element according to claim 8, wherein the mixture further comprises a film forming material, the absorption wavelength range of the film forming material is different from the absorption wavelength range of the alignment film material, and the photoelectric element is The manufacturing method further includes: providing a light beam, wherein the wavelength distribution range of the light beam is different from a wavelength distribution range of the first polarized light and a wavelength distribution range of the second polarized light; and causing the light beam to illuminate the film forming material, so that The film forming material absorbs the light beam to form the film forming layer, wherein the alignment layer and the film forming layer are located between the optical anisotropic material and the first substrate and the second substrate, and the film forming layer is located at the film forming layer The alignment layer is between the first substrate and the second substrate. 一種光電元件的製造方法,包括:提供二基板以及一混合物,該混合物包括一光學異方向性材料以及一配向材料;在該些基板之間填入該混合物;提供一偏極光;令該光學異方向性材料在該偏極光傳遞方向上的相延遲量實質上為零;以及於該光學異方向性材料在該偏極光傳遞方向上的相延遲量實質上為零時,令該偏極光照射該配向材料,以使該配向材料在該些基板上形成一配向層。 A method of manufacturing a photovoltaic element, comprising: providing a two substrate and a mixture, the mixture comprising an optically anisotropic material and an alignment material; filling the mixture between the substrates; providing a polarized light; The amount of phase retardation of the directional material in the direction of the polarization of the polarization is substantially zero; and when the amount of phase retardation of the optically anisotropic material in the direction of the polarization of the polarization is substantially zero, the polar light is irradiated The alignment material is such that the alignment material forms an alignment layer on the substrates. 如申請專利範圍第13項所述的光電元件的製造方法,其 中令該光學異方向性材料在該偏極光傳遞方向上的相延遲量實質上為零的方法包括:對該光學異方向性材料的多個光學異方向性分子施加電壓以使每一該光學異方向性分子的光軸與該偏極光的傳遞方向實質上平行,或加熱該光學異方向性材料以使該光學異方向性材料的溫度大於或等於該光學異方向性材料的澄清點。 A method of manufacturing a photovoltaic element according to claim 13, wherein The method for causing the amount of phase retardation of the optically anisotropic material to be substantially zero in the direction of the polarization of the polarized light comprises: applying a voltage to the plurality of optically anisotropic molecules of the optically anisotropic material to make each of the optical The optical axis of the heterogeneous molecule is substantially parallel to the direction of transmission of the polarized light, or the optically anisotropic material is heated such that the temperature of the optically anisotropic material is greater than or equal to the clearing point of the optically anisotropic material. 如申請專利範圍第13項所述的光電元件的製造方法,其中該混合物更包括一成膜材料,該成膜材料為一自組裝型高分子材料,而該光電元件的製造方法更包括:令該自組裝型高分子材料自然地與該些基板鍵結而在該些基板上形成一成膜層,其中該配向層以及該成膜層位於該光學異方向性材料與該些基板之間,而該成膜層位於該配向層與該些基板之間。 The method of manufacturing a photovoltaic device according to claim 13, wherein the mixture further comprises a film forming material, the film forming material is a self-assembling polymer material, and the manufacturing method of the photovoltaic device further comprises: The self-assembling polymer material is naturally bonded to the substrates to form a film formation layer on the substrates, wherein the alignment layer and the film formation layer are located between the optical anisotropic material and the substrates. The film forming layer is located between the alignment layer and the substrates. 如申請專利範圍第13項所述的光電元件的製造方法,其中該混合物更包括一成膜材料,而該光電元件的製造方法更包括:加熱該成膜材料以使該成膜材料在該些基板上形成一成膜層,其中該配向層以及該成膜層位於該光學異方向性材料與該些基板之間,而該成膜層位於該配向層與該些基板之間。 The method of manufacturing a photovoltaic element according to claim 13, wherein the mixture further comprises a film forming material, and the method of manufacturing the photovoltaic element further comprises: heating the film forming material to make the film forming material A film forming layer is formed on the substrate, wherein the alignment layer and the film forming layer are located between the optical anisotropic material and the substrate, and the film forming layer is located between the alignment layer and the substrates. 如申請專利範圍第13項所述的光電元件的製造方法,其中該混合物更包括一成膜材料,該偏極光同時照射該配向材料以及該成膜材料,以使該成膜材料在該些基板上形成一成膜層,其中在該偏極光照射下,該成膜材料的聚合反應速率實質上大於該配向材料的聚合反應速率,該配向層以及該成膜層位於該光學異方向性材料與該些基板之間,而該成膜層位於該配向層與該些基板之間。 The method of manufacturing a photovoltaic device according to claim 13, wherein the mixture further comprises a film forming material, the polarized light simultaneously irradiating the alignment material and the film forming material, so that the film forming material is on the substrates. Forming a film formation layer, wherein the polymerization rate of the film forming material is substantially greater than the polymerization rate of the alignment material under the irradiation of the polarized light, the alignment layer and the film forming layer are located in the optical anisotropic material and Between the substrates, the film formation layer is located between the alignment layer and the substrates. 如申請專利範圍第13項所述的光電元件的製造方法,其 中該混合物更包括一成膜材料,該成膜材料的吸收波長範圍與該配向膜材料的吸收波長範圍不同,而該光電元件的製造方法更包括:提供一光束,其中該偏極光的波長分佈範圍與該光束的波長分佈範圍不同;以及令該光束照射該成膜材料,以使該成膜材料吸收該光束而形成該成膜層,該成膜材料吸收該光束而形成一成膜層,其中該配向層以及該成膜層位於該光學異方向性材料與該些基板之間,而該成膜層位於該配向層與該些基板之間。A method of manufacturing a photovoltaic element according to claim 13, wherein The mixture further includes a film forming material, the absorption wavelength range of the film forming material is different from the absorption wavelength range of the alignment film material, and the method of manufacturing the photovoltaic element further comprises: providing a light beam, wherein the wavelength distribution of the polarized light The range is different from the wavelength distribution range of the light beam; and the light beam is irradiated to the film forming material, so that the film forming material absorbs the light beam to form the film forming layer, and the film forming material absorbs the light beam to form a film forming layer, The alignment layer and the film formation layer are located between the optically anisotropic material and the substrate, and the film formation layer is located between the alignment layer and the substrates.
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