TWI503713B - Touch panel - Google Patents

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TWI503713B
TWI503713B TW102125597A TW102125597A TWI503713B TW I503713 B TWI503713 B TW I503713B TW 102125597 A TW102125597 A TW 102125597A TW 102125597 A TW102125597 A TW 102125597A TW I503713 B TWI503713 B TW I503713B
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layer
touch panel
substrate
metal
touch
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TW102125597A
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Chinese (zh)
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TW201504870A (en
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Yaochih Chuang
Hanming Chen
Sianzong Liao
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Hannstouch Solution Inc
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Description

觸控面板Touch panel

本發明是有關於一種應用低反射導電層的觸控面板。The invention relates to a touch panel using a low-reflection conductive layer.

近年來,輕薄的平面顯示器已成為各種電子產品廣泛使用的顯示器。為了達到使用便利性、外觀簡潔以及多功能的目的,許多資訊產品已由傳統之鍵盤或滑鼠等輸入裝置,轉變為使用觸控面板(Touch Panel)作為輸入裝置。In recent years, thin and light flat panel displays have become widely used displays for various electronic products. In order to achieve convenience, compact appearance and versatility, many information products have been converted from input devices such as traditional keyboards or mice to using touch panels as input devices.

隨著平面顯示器與觸控輸入裝置的技術快速發展,為了在有限的體積下,讓使用者有較大的可視畫面以及提供更方便的操作模式,某些電子產品將觸控面板與顯示面板結合,而構成觸控顯示面板。With the rapid development of the technology of flat panel displays and touch input devices, in order to allow users to have larger visual images and provide more convenient operation modes under limited volume, some electronic products combine touch panels with display panels. And constitute a touch display panel.

觸控面板的操作原理為,當一導體物件(例如手指)接觸到觸控面板的觸控感測陣列時,觸控感測陣列的電氣特性(例如電阻值或電容值)會隨著改變,並導致觸控感測陣列的偏壓改變。此電氣特性上的改變會轉換為控制訊號傳送至外部之控制電路板上,並經由處理器進行資料處理並運算得出結果。接著,再藉由外部控制電路板輸出一顯示訊號至顯示面板中,並經由顯示面板將影像顯示在使用者 眼前。The operating principle of the touch panel is that when a conductor object (such as a finger) contacts the touch sensing array of the touch panel, the electrical characteristics (such as resistance value or capacitance value) of the touch sensing array may change. And causing the bias of the touch sensing array to change. This change in electrical characteristics is converted to a control signal that is transmitted to the external control board and processed by the processor for data processing. Then, a display signal is outputted to the display panel by the external control circuit board, and the image is displayed on the user through the display panel. In front of you.

由於觸控面板係疊置於顯示面板之上,因此,如何解決因觸控面板上之金屬層之反射而影響顯示面板的顯示品質,便成為一個重要的課題。Since the touch panel is stacked on the display panel, how to solve the display quality of the display panel due to the reflection of the metal layer on the touch panel becomes an important issue.

本發明提供了一種應用低反射導電層之觸控面板,用以解決金屬反射所造成的問題。The invention provides a touch panel using a low-reflection conductive layer for solving the problem caused by metal reflection.

本發明之一態樣提供了一種觸控面板,包含基板以及設置於基板上的低反射導電層。低反射金屬層依序包含氧化物層、金屬層以及設置於金屬層以及氧化物層之間的氮化物層。其中金屬層、氧化物層以及氮化物層緊密接觸,氧化物層與氮化物層之間的厚度比例介於1:0.6至1:1.5之間。One aspect of the present invention provides a touch panel including a substrate and a low-reflection conductive layer disposed on the substrate. The low-reflection metal layer sequentially includes an oxide layer, a metal layer, and a nitride layer disposed between the metal layer and the oxide layer. The metal layer, the oxide layer and the nitride layer are in close contact, and the thickness ratio between the oxide layer and the nitride layer is between 1:0.6 and 1:1.5.

於本發明之一或多個實施例中,氧化物層為金屬氧化物層,氮化物層為金屬氮化物層。In one or more embodiments of the invention, the oxide layer is a metal oxide layer and the nitride layer is a metal nitride layer.

於本發明之一或多個實施例中,氧化物層之厚度介於20奈米至100奈米之間,氮化物層之厚度介於20奈米至100奈米之間,金屬層之厚度介於50奈米至500奈米之間。In one or more embodiments of the present invention, the thickness of the oxide layer is between 20 nm and 100 nm, and the thickness of the nitride layer is between 20 nm and 100 nm, and the thickness of the metal layer. Between 50 nm and 500 nm.

於本發明之一或多個實施例中,金屬層的材料為鉬,氮化物層的材料為氮化鉬,氧化物層的材料為氧化鉬。In one or more embodiments of the present invention, the material of the metal layer is molybdenum, the material of the nitride layer is molybdenum nitride, and the material of the oxide layer is molybdenum oxide.

於本發明之一或多個實施例中,金屬層的厚度為90奈米,氮化物層的厚度為40奈米,氧化物層的厚度為 40奈米。In one or more embodiments of the present invention, the thickness of the metal layer is 90 nm, the thickness of the nitride layer is 40 nm, and the thickness of the oxide layer is 40 nm.

於本發明之一或多個實施例中,觸控面板為一導電網觸控面板,低反射導電層包含一導電網結構,導電網結構之導線線寬為2-10微米(μm)。In one or more embodiments of the present invention, the touch panel is a conductive mesh touch panel, and the low-reflection conductive layer comprises a conductive mesh structure, and the conductive mesh structure has a wire width of 2-10 micrometers (μm).

於本發明之一或多個實施例中,氧化物層直接接觸基板。In one or more embodiments of the invention, the oxide layer directly contacts the substrate.

於本發明之一或多個實施例中,金屬材料係選自鉬、銅、銀、鉻和鋁其中之一。In one or more embodiments of the invention, the metallic material is selected from one of molybdenum, copper, silver, chromium, and aluminum.

於本發明之一或多個實施例中,觸控面板為一單層式觸控面板,低反射導電層包含複數個觸控單元,以及分別連接觸控單元的複數個導線。In one or more embodiments of the present invention, the touch panel is a single-layer touch panel, and the low-reflection conductive layer includes a plurality of touch units and a plurality of wires respectively connected to the touch unit.

於本發明之一或多個實施例中,觸控單元包含一指狀單元,以及呈ㄇ字狀並與指狀單元對向排列之複數個對向單元。In one or more embodiments of the present invention, the touch unit includes a finger unit, and a plurality of opposite units that are in a U shape and are aligned with the finger unit.

於本發明之一或多個實施例中,觸控單元為複數個矩形網格狀。In one or more embodiments of the present invention, the touch unit is in a plurality of rectangular grids.

於本發明之一或多個實施例中,導線為直線狀。In one or more embodiments of the invention, the wires are linear.

於本發明之一或多個實施例中,導線為規則或不規則波浪狀。In one or more embodiments of the invention, the wires are regular or irregularly wavy.

於本發明之一或多個實施例中,觸控單元為規則或不規則的波浪網狀。In one or more embodiments of the present invention, the touch unit is a regular or irregular wavy mesh.

於本發明之一或多個實施例中,觸控面板為一單片玻璃解決方案觸控面板,低反射導電層包含複數個導線以及複數個架橋部,單片玻璃解決方案觸控面板更包含局部 覆蓋架橋部的複數個絕緣層,以及設置於基板上的複數個透明導電電極,其中部分的透明導電電極之間藉由架橋部連接,每一透明導電電極分別連接至導線。In one or more embodiments of the present invention, the touch panel is a single-chip glass solution touch panel, and the low-reflection conductive layer includes a plurality of wires and a plurality of bridge portions, and the single-chip glass solution touch panel further includes Local A plurality of insulating layers covering the bridge portion and a plurality of transparent conductive electrodes disposed on the substrate, wherein a portion of the transparent conductive electrodes are connected by a bridge portion, and each of the transparent conductive electrodes is respectively connected to the wires.

於本發明之一或多個實施例中,觸控面板更包含一遮光層,設置於基板上並圍繞透明導電電極,其中導線位於遮光層與基板之間。In one or more embodiments of the present invention, the touch panel further includes a light shielding layer disposed on the substrate and surrounding the transparent conductive electrode, wherein the wire is located between the light shielding layer and the substrate.

本發明提供了一種應用低反射導電層的觸控面板,其可以降低金屬層的光線反射率而使其可視度降低,以減少因金屬反射而影響觸控面板顯示能力的問題。The invention provides a touch panel using a low-reflection conductive layer, which can reduce the light reflectance of the metal layer and reduce the visibility thereof, so as to reduce the problem that the display capability of the touch panel is affected by the metal reflection.

100‧‧‧低反射導電層100‧‧‧Low-reflective conductive layer

110‧‧‧金屬層110‧‧‧metal layer

120‧‧‧氧化物層120‧‧‧Oxide layer

130‧‧‧氮化物層130‧‧‧ nitride layer

200‧‧‧導電網觸控面板200‧‧‧ Conductive mesh touch panel

210‧‧‧基板210‧‧‧Substrate

220‧‧‧導電網結構220‧‧‧ Conductive mesh structure

300、300’、300”‧‧‧單層式觸控面板300, 300', 300" ‧ ‧ single-layer touch panel

310‧‧‧基板310‧‧‧Substrate

320、320’、320”‧‧‧觸控單元320, 320', 320" ‧ ‧ touch unit

321‧‧‧指狀單元321‧‧‧ finger unit

322‧‧‧對向單元322‧‧‧ opposite unit

330、330”‧‧‧導線330, 330"‧‧‧ wires

400‧‧‧單片玻璃解決方案觸控面板400‧‧‧Single glass solution touch panel

410‧‧‧基板410‧‧‧Substrate

420‧‧‧導線420‧‧‧ wire

430‧‧‧架橋部430‧‧ ‧Bridge Department

440‧‧‧絕緣層440‧‧‧Insulation

450‧‧‧透明導電電極450‧‧‧Transparent conductive electrode

460‧‧‧遮光層460‧‧‧ shading layer

A-A、B-B、C-C‧‧‧線段A-A, B-B, C-C‧‧‧ segments

第1圖繪示本發明之低反射導電層一實施例之示意圖。FIG. 1 is a schematic view showing an embodiment of a low-reflection conductive layer of the present invention.

第2圖為本發明之導電網觸控面板一實施例的局部上視圖。2 is a partial top view of an embodiment of a conductive mesh touch panel of the present invention.

第3圖為沿第2圖中之線段A-A的剖面圖。Fig. 3 is a cross-sectional view taken along line A-A in Fig. 2.

第4圖為本發明之一種單層式觸控面板一實施例的上視圖。4 is a top view of an embodiment of a single-layer touch panel of the present invention.

第5圖為沿第4圖中之B-B線段的剖面圖。Fig. 5 is a cross-sectional view taken along line B-B of Fig. 4.

第6圖為本發明之一種單層式觸控面板另一實施例的上視圖。Figure 6 is a top view of another embodiment of a single-layer touch panel of the present invention.

第7圖為本發明之一種單層式觸控面板再一實施例的上視圖。Figure 7 is a top view of still another embodiment of a single-layer touch panel of the present invention.

第8A圖至第8D圖分別繪示本發明之一種單片玻璃解 決方案觸控面板的製作方法一實施例不同階段的示意圖。8A to 8D respectively illustrate a single glass solution of the present invention A schematic diagram of a method for fabricating a touch panel in a different stage of an embodiment.

第9圖繪示沿第8D圖中之線段C-C的剖面圖。Figure 9 is a cross-sectional view taken along line C-C of Figure 8D.

以下將以圖式及詳細說明清楚說明本發明之精神,任何所屬技術領域中具有通常知識者在瞭解本發明之較佳實施例後,當可由本發明所教示之技術,加以改變及修飾,其並不脫離本發明之精神與範圍。The spirit and scope of the present invention will be apparent from the following description of the preferred embodiments of the invention. The spirit and scope of the invention are not departed.

參照第1圖,其繪示本發明所應用之低反射導電層一實施例之示意圖。低反射導電層100包含有金屬層110、氧化物層120以及氮化物層130,其中氮化物層130設置於金屬層110以及氧化物層120之間,且金屬層110、氧化物層120以及氮化物層130之間彼此緊密地接觸。Referring to Figure 1, there is shown a schematic diagram of an embodiment of a low-reflection conductive layer to which the present invention is applied. The low-reflection conductive layer 100 includes a metal layer 110, an oxide layer 120, and a nitride layer 130, wherein the nitride layer 130 is disposed between the metal layer 110 and the oxide layer 120, and the metal layer 110, the oxide layer 120, and the nitrogen The chemical layers 130 are in close contact with each other.

因氧化物層120以及氮化物層130對於光線的折射率不同,因此可以達到黑化金屬層110使其消光的目的。使得金屬層110在面對於氧化物層120以及氮化物層130之一面的光線反射能力降低而降低金屬層110在視覺上的亮度。如此一來,低反射導電層100藉由氧化物層120以及氮化物層130破壞金屬層110的反射能力,便可以降低低反射導電層100的可見度,達到黑化金屬層110之功效。Since the oxide layer 120 and the nitride layer 130 have different refractive indices for light, the blackened metal layer 110 can be used for extinction. The light reflecting ability of the metal layer 110 on the surface of the oxide layer 120 and the nitride layer 130 is reduced to reduce the visual brightness of the metal layer 110. In this way, the low-reflection conductive layer 100 can reduce the visibility of the low-reflection conductive layer 100 by the oxide layer 120 and the nitride layer 130 to destroy the reflection ability of the metal layer 110, thereby achieving the effect of the blackened metal layer 110.

氧化物層120以及氮化物層130之間的厚度的比例較佳地為介於1:0.6至1:1.5之間。氧化物層120可以為金屬氧化物層,而氮化物層130可以為金屬氮化物層。氧化物層120之厚度介於20奈米至100奈米之間。氮化物層 130的厚度介於20奈米至100奈米之間。金屬層110之厚度則是介於50奈米至500奈米之間。金屬層110之材料可以為鉬、銅、銀、鉻或鋁等金屬材質。The ratio of the thickness between the oxide layer 120 and the nitride layer 130 is preferably between 1:0.6 and 1:1.5. The oxide layer 120 may be a metal oxide layer, and the nitride layer 130 may be a metal nitride layer. The thickness of the oxide layer 120 is between 20 nm and 100 nm. Nitride layer The thickness of 130 is between 20 nm and 100 nm. The thickness of the metal layer 110 is between 50 nm and 500 nm. The material of the metal layer 110 may be a metal material such as molybdenum, copper, silver, chromium or aluminum.

根據實驗結果,以鉬為例,單純的厚度為90奈米的鉬層,其阻抗約為13.38歐姆,其光線反射率為47.77%。而在採用本發明所提供之結構後,以MoO/MoN/Mo所組成的低反射導電層100為例,其中三者的厚度依序分別為40奈米/40奈米/90奈米。此低反射導電層100的阻抗可達12.42歐姆,而其光線反射率為6.63%。由此可以得知,採用本發明之結構的低反射導電層100可以兼具有低阻抗以及低光線反射率之優點。According to the experimental results, taking molybdenum as an example, a simple molybdenum layer having a thickness of 90 nm has an impedance of about 13.38 ohms and a light reflectance of 47.77%. After the structure provided by the present invention is used, the low-reflection conductive layer 100 composed of MoO/MoN/Mo is taken as an example, and the thickness of the three is 40 nm/40 nm/90 nm, respectively. The low-reflection conductive layer 100 has an impedance of up to 12.42 ohms and a light reflectance of 6.63%. From this, it can be known that the low-reflection conductive layer 100 using the structure of the present invention can combine the advantages of low impedance and low light reflectance.

低反射導電層100中,金屬層110、氧化物層120以及氮化物層130的材料、厚度以及比例關係可以根據實務上的設計需求,例如不同的分布面積、線寬等需求進行變更,並不以前述揭露為限。In the low-reflection conductive layer 100, the material, thickness, and proportional relationship of the metal layer 110, the oxide layer 120, and the nitride layer 130 may be changed according to practical design requirements, such as different distribution areas, line widths, etc., and are not The foregoing disclosure is limited.

低反射導電層100可以應用於不同領域的觸控面板中,以下將以實施例具體說明之。The low-reflection conductive layer 100 can be applied to touch panels of different fields, which will be specifically described below by way of examples.

請同時參照第2圖與第3圖,其中第2圖為本發明之導電網觸控面板一實施例的局部上視圖,第3圖為沿第2圖中之線段A-A的剖面圖。低反射導電層100可以應用於導電網(metal mesh)形式的觸控面板中。導電網觸控面板200包含有基板210以及分布於基板210上之導電網結構220,其中導電網結構220之材料為前述之低反射導電層100。Please refer to FIG. 2 and FIG. 3 simultaneously. FIG. 2 is a partial top view of an embodiment of the conductive mesh touch panel of the present invention, and FIG. 3 is a cross-sectional view along line A-A of FIG. The low-reflection conductive layer 100 can be applied to a touch panel in the form of a metal mesh. The conductive mesh touch panel 200 includes a substrate 210 and a conductive mesh structure 220 distributed on the substrate 210. The conductive mesh structure 220 is made of the low reflective conductive layer 100.

導電網結構220之材料為低反射導電層100,其中氧化物層120為直接接觸或鄰近基板210的一面。更具體地說,氧化物層120介於氮化物層130與基板210之間,氮化物層130則是介於金屬層110以及基板210之間。基板210為面對人眼的顯示面或觸控面。導電網結構220因採用低反射導電層100作為材料,因此可以使得金屬層110在面對基板210的一面被黑化而降低導電網結構220在基板210上的可視度。The material of the conductive mesh structure 220 is the low reflective conductive layer 100, wherein the oxide layer 120 is directly contacting or adjacent to one side of the substrate 210. More specifically, the oxide layer 120 is interposed between the nitride layer 130 and the substrate 210, and the nitride layer 130 is interposed between the metal layer 110 and the substrate 210. The substrate 210 is a display surface or a touch surface facing the human eye. The conductive mesh structure 220 uses the low-reflection conductive layer 100 as a material, so that the metal layer 110 can be blackened on the side facing the substrate 210 to reduce the visibility of the conductive mesh structure 220 on the substrate 210.

導電網結構220可以為規則或是不規則的圖案,導電網結構220係由多條導線交織排列所構成。導電網結構220之導線的線寬約為2-10微米(μm)。低反射導電層100中,氧化物層120以及氮化物層130之間的厚度的比例較佳地為介於1:0.6至1:1.5之間。氧化物層120可以為金屬氧化物層,而氮化物層130可以為金屬氮化物層。氧化物層120之厚度介於20奈米至100奈米之間。氮化物層130的厚度介於20奈米至100奈米之間。金屬層110之厚度則是介於50奈米至500奈米之間。金屬層110之材料可以為鉬、銅、銀、鉻或鋁等金屬材質。The conductive mesh structure 220 may be a regular or irregular pattern, and the conductive mesh structure 220 is formed by interlacing a plurality of wires. The wire width of the conductive mesh structure 220 is about 2-10 micrometers (μm). In the low-reflection conductive layer 100, the ratio of the thickness between the oxide layer 120 and the nitride layer 130 is preferably between 1:0.6 and 1:1.5. The oxide layer 120 may be a metal oxide layer, and the nitride layer 130 may be a metal nitride layer. The thickness of the oxide layer 120 is between 20 nm and 100 nm. The thickness of the nitride layer 130 is between 20 nm and 100 nm. The thickness of the metal layer 110 is between 50 nm and 500 nm. The material of the metal layer 110 may be a metal material such as molybdenum, copper, silver, chromium or aluminum.

接著請同時參照第4圖與第5圖,其中第4圖為本發明之一種單層式觸控面板一實施例的上視圖,第5圖為沿第4圖中之B-B線段的剖面圖。單層式(one layer)觸控面板300包含有基板310以及設置於基板310上之多個觸控單元320。觸控單元320包含為呈現指狀外形的指狀單元321及呈ㄇ字狀並與指狀單元321對向交錯排列設置的對 向單元322。指狀單元321與對向單元322係為同一材質並透過同一光罩同時形成於基板310上,觸控單元320之形狀以及排列方式可以依照不同的設計需求變更,並不以此為限。4 and FIG. 5, wherein FIG. 4 is a top view of an embodiment of a single-layer touch panel of the present invention, and FIG. 5 is a cross-sectional view taken along line B-B of FIG. 4. The one-layer touch panel 300 includes a substrate 310 and a plurality of touch units 320 disposed on the substrate 310. The touch unit 320 includes a finger unit 321 that presents a finger shape and a pair that is in a U shape and is arranged in a staggered manner with the finger unit 321 . To unit 322. The finger unit 321 and the opposite unit 322 are formed of the same material and are formed on the substrate 310 through the same mask. The shape and arrangement of the touch unit 320 can be changed according to different design requirements, and are not limited thereto.

單層式觸控面板300更包含有多條導線330,導線330分別連接至觸控單元320。導線330以及觸控單元320為採用同樣的光罩製作而成,導線330以及觸控單元320是在相同的製程中製作而成。導線330以及觸控單元320之材料可為低反射導電層100。因導線330以及觸控單元320採用低反射導電層100作為材料,因此可以使得金屬層110在面對基板310的一面被黑化而降低導線330以及觸控單元320在基板310上的可視度,使得低反射導電層100不僅應用於導線330,而更可取代傳統的透明導電層作為觸控單元320的材料。The single-layer touch panel 300 further includes a plurality of wires 330 connected to the touch unit 320. The wire 330 and the touch unit 320 are made by using the same mask, and the wire 330 and the touch unit 320 are fabricated in the same process. The material of the wire 330 and the touch unit 320 may be the low-reflection conductive layer 100. Since the conductive layer 100 and the touch unit 320 are used as the material, the metal layer 110 can be blackened on the side facing the substrate 310 to reduce the visibility of the wire 330 and the touch unit 320 on the substrate 310. The low-reflection conductive layer 100 is applied not only to the wire 330 but also to the conventional transparent conductive layer as the material of the touch unit 320.

低反射導電層100中,氧化物層120為直接接觸或鄰近基板310的一面。更具體地說,氧化物層120介於氮化物層130與基板310之間,氮化物層130則是介於金屬層110以及基板310之間。氧化物層120以及氮化物層130之間的厚度的比例較佳地為介於1:0.6至1:1.5之間。氧化物層120可以為金屬氧化物層,而氮化物層130可以為金屬氮化物層。氧化物層120之厚度介於20奈米至100奈米之間。氮化物層130的厚度介於20奈米至100奈米之間。金屬層110之厚度則是介於50奈米至500奈米之間。金屬層110之材料可以為鉬、銅、銀、鉻或鋁等金屬材質。In the low-reflection conductive layer 100, the oxide layer 120 is directly contacting or adjacent to one side of the substrate 310. More specifically, the oxide layer 120 is interposed between the nitride layer 130 and the substrate 310, and the nitride layer 130 is interposed between the metal layer 110 and the substrate 310. The ratio of the thickness between the oxide layer 120 and the nitride layer 130 is preferably between 1:0.6 and 1:1.5. The oxide layer 120 may be a metal oxide layer, and the nitride layer 130 may be a metal nitride layer. The thickness of the oxide layer 120 is between 20 nm and 100 nm. The thickness of the nitride layer 130 is between 20 nm and 100 nm. The thickness of the metal layer 110 is between 50 nm and 500 nm. The material of the metal layer 110 may be a metal material such as molybdenum, copper, silver, chromium or aluminum.

參照第6圖,其繪示本發明之一種單層式觸控面板另一實施例的上視圖。單層式觸控面板300’包含有基板310以及設置於基板310上的多個觸控單元320’。觸控單元320’之外形可以為矩形網格狀,其中包含有多個縱橫相交的線條。觸控單元320’成陣列地排列於基板310上。單層式觸控面板300’更包含有多條導線330,導線330分別連接至觸控單元320’,導線330係成直線狀。導線330以及觸控單元320’為透過同一光罩在相同的製程中製作而成。導線330以及觸控單元320’之材料可為前述的低反射導電層,在此不再贅述。Referring to Figure 6, a top view of another embodiment of a single layer touch panel of the present invention is illustrated. The single-layer touch panel 300' includes a substrate 310 and a plurality of touch units 320' disposed on the substrate 310. The shape of the touch unit 320' may be a rectangular grid shape including a plurality of vertical and horizontal intersecting lines. The touch units 320' are arranged in an array on the substrate 310. The single-layer touch panel 300' further includes a plurality of wires 330 connected to the touch unit 320', and the wires 330 are linear. The wire 330 and the touch unit 320' are fabricated through the same mask in the same process. The material of the wire 330 and the touch unit 320' may be the aforementioned low-reflection conductive layer, and details are not described herein.

參照第7圖,其繪示本發明之一種單層式觸控面板再一實施例的上視圖。單層式觸控面板300”包含有基板310、設置於基板310上的多個觸控單元320”以及分別與觸控單元320”連接之多條導線330”。觸控單元320’成陣列地排列於基板310上。本實施例中之觸控單元320”之外形可以為規則或不規則的波浪網狀,例如包含有多個橫向以及縱向交錯的規則(例如正弦波(Sinusoid wave)等)或不規則波浪線,而對應的導線330”亦可以為規則或不規則波浪線,然在其它實施例,導線330”可為如第6圖之直線狀結構。藉由將觸控單元320”以及導線330”進行規則或不規則形狀的彎曲處理,便可以解決因線條影像重疊所導致的莫瑞(Moire)效應。在另一實施例中,要特別一提的是觸控單元320”可以為如第6圖所示之矩形網格狀,而導線330”為如第7圖所示之規則或不規則波浪線;此實施例特別適合當觸 控單元320”和導線330”設置於彩色濾光片基板時,但不以此為限。Referring to FIG. 7, a top view of still another embodiment of a single-layer touch panel of the present invention is shown. The single-layer touch panel 300 ′′ includes a substrate 310 , a plurality of touch units 320 ′′ disposed on the substrate 310 , and a plurality of wires 330 ′′ respectively connected to the touch unit 320 ′′. The touch units 320' are arranged in an array on the substrate 310. The shape of the touch unit 320" in this embodiment may be a regular or irregular wavy network, for example, including a plurality of horizontal and vertical interlaced rules (such as a sine wave, etc.) or irregular wavy lines. The corresponding wire 330" may also be a regular or irregular wavy line. However, in other embodiments, the wire 330" may be a linear structure as shown in Fig. 6. By the rule of the touch unit 320" and the wire 330" Or the irregular shape of the bending process can solve the Moire effect caused by the overlapping of the line images. In another embodiment, it is particularly mentioned that the touch unit 320" can be as shown in FIG. The rectangular grid is shown, and the wire 330" is a regular or irregular wavy line as shown in Fig. 7; this embodiment is particularly suitable for touch The control unit 320" and the wire 330" are disposed on the color filter substrate, but are not limited thereto.

同樣地,將線條進行規則或不規則處理以解決莫瑞效應的設計亦可以應用於第2圖、第4圖以及第6圖中的觸控面板,本技術領域人員可以依照實際的需求進行變化。導線330”以及觸控單元320”為透過同一光罩在相同的製程中製作而成。導線330”以及觸控單元320”之材料可為前述的低反射導電層,在此不再贅述。Similarly, the design of the rule or irregularity of the lines to solve the Murray effect can also be applied to the touch panels in FIG. 2, FIG. 4 and FIG. 6, and the person skilled in the art can change according to actual needs. . The wire 330" and the touch unit 320" are fabricated in the same process through the same mask. The material of the wire 330" and the touch unit 320" may be the aforementioned low-reflection conductive layer, which will not be described herein.

參照第8A圖至第8D圖,其分別繪示本發明之一種單片玻璃解決方案觸控面板的製作方法一實施例不同階段的示意圖。低反射導電層亦可以應用於單片玻璃解決方案(one glass solution;OGS)觸控面板中,用以解決其架橋部以及周圍導線金屬反射影響視覺效果的問題。8A to 8D are schematic diagrams showing different stages of an embodiment of a method for fabricating a touch panel of a single-chip glass solution according to the present invention. The low-reflection conductive layer can also be applied to a one-glass solution (OGS) touch panel to solve the problem that the bridge portion and the surrounding wire metal reflection affect the visual effect.

第8A圖為提供一基板410,並在基板410上形成多個導線420以及多個架橋部430。其中基板410較佳地為透明基板,如玻璃。導線420以及架橋部430為採用相同的光罩在相同的製程中製作而成。導線420以及架橋部430之材料為前述之低反射導電層。FIG. 8A shows a substrate 410, and a plurality of wires 420 and a plurality of bridge portions 430 are formed on the substrate 410. The substrate 410 is preferably a transparent substrate such as glass. The wire 420 and the bridge portion 430 are fabricated in the same process using the same mask. The material of the wire 420 and the bridging portion 430 is the aforementioned low-reflection conductive layer.

接著,第8B圖為在基板410上形成多個絕緣層440,其中絕緣層440分別局部覆蓋架橋部430。以本實施例而言,架橋部430係用以連接橫向的電極,因此,架橋部430的左右兩端會外露於絕緣層440,不被絕緣層440所覆蓋。Next, FIG. 8B illustrates forming a plurality of insulating layers 440 on the substrate 410, wherein the insulating layers 440 partially cover the bridging portion 430, respectively. In the present embodiment, the bridging portion 430 is used to connect the lateral electrodes. Therefore, the left and right ends of the bridging portion 430 are exposed to the insulating layer 440 and are not covered by the insulating layer 440.

接著,第8C圖為在基板410上形成多個透明導電 電極450,其中部分的透明導電電極450於縱向排列的方向彼此直接連接,而另一部份的透明導電電極450則是於橫向的方向上透過架橋部430連接。Next, FIG. 8C is a diagram of forming a plurality of transparent conductive layers on the substrate 410. The electrode 450 has a portion of the transparent conductive electrodes 450 directly connected to each other in the longitudinal direction, and another portion of the transparent conductive electrodes 450 are connected through the bridge portion 430 in the lateral direction.

最後,第8D圖為在基板410上形成遮光層460,且遮光層460為圍繞透明導電電極450設置。其中位於透明導電電極450周圍之導線420被遮光層460所覆蓋。如此一來,便可以得到單片玻璃解決方案觸控面板400。Finally, the 8D is a light shielding layer 460 formed on the substrate 410, and the light shielding layer 460 is disposed around the transparent conductive electrode 450. The wire 420 located around the transparent conductive electrode 450 is covered by the light shielding layer 460. In this way, the single-glass solution touch panel 400 can be obtained.

由於導線420以及架橋部430係採用反射不明顯而具有低可視度的低反射導電層作為材料,因此,可以減少於顯示面直接看到導線420以及架橋部430的可能性,而使得遮光層460可以在導線420之後製作。Since the wire 420 and the bridge portion 430 are made of a low-reflection conductive layer having low visibility and having low visibility, the possibility that the display surface directly sees the wire 420 and the bridge portion 430 can be reduced, so that the light shielding layer 460 is made. It can be made after the wire 420.

參照第9圖,其繪示沿第8D圖中之線段C-C的剖面圖。單片玻璃解決方案觸控面板400中包含有基板410、設置於基板410上之導線420,以及設置於基板410以及導線420上的遮光層460。遮光層460係在導線420製作完成後才製作於基板410上,因此導線420會位於基板410以及遮光層460之間。Referring to Fig. 9, a cross-sectional view taken along line C-C in Fig. 8D is shown. The single-glass solution touch panel 400 includes a substrate 410, a wire 420 disposed on the substrate 410, and a light shielding layer 460 disposed on the substrate 410 and the wire 420. The light shielding layer 460 is formed on the substrate 410 after the wire 420 is completed, so that the wire 420 is located between the substrate 410 and the light shielding layer 460.

導線420以及架橋部430(見第8A圖)之材料為低反射導電層100。低反射導電層100中,氧化物層120為接觸基板410的一面。更具體地說,氧化物層120介於氮化物層130與基板410之間,氮化物層130則是介於金屬層110以及基板410之間。氧化物層120以及氮化物層130之間的厚度的比例較佳地為介於1:0.6至1:1.5之間。氧化物層120可以為金屬氧化物層,氮化物層130可以為金屬氮 化物層。氧化物層120之厚度介於20奈米至100奈米之間。氮化物層130的厚度介於20奈米至100奈米之間。金屬層110之厚度則是介於50奈米至500奈米之間。金屬層110之材料可以為鉬、銅、銀、鉻或鋁等金屬材質。The material of the wire 420 and the bridging portion 430 (see Fig. 8A) is the low reflection conductive layer 100. In the low-reflection conductive layer 100, the oxide layer 120 is a side that contacts the substrate 410. More specifically, the oxide layer 120 is interposed between the nitride layer 130 and the substrate 410, and the nitride layer 130 is interposed between the metal layer 110 and the substrate 410. The ratio of the thickness between the oxide layer 120 and the nitride layer 130 is preferably between 1:0.6 and 1:1.5. The oxide layer 120 may be a metal oxide layer, and the nitride layer 130 may be a metal nitrogen Chemical layer. The thickness of the oxide layer 120 is between 20 nm and 100 nm. The thickness of the nitride layer 130 is between 20 nm and 100 nm. The thickness of the metal layer 110 is between 50 nm and 500 nm. The material of the metal layer 110 may be a metal material such as molybdenum, copper, silver, chromium or aluminum.

傳統製程中,因材料的限制多是將金屬導線製作於遮光層上。此種製作方式因為金屬導線與有機材料的遮光層之間附著力不佳而產生金屬導線剝落的問題。但是,本發明中因為採用低反射導電層作為導線420的材料,因此可以先將導線420製作在基板410上之後,再將遮光層460覆蓋在導線420上。由於導線420與基板410(如玻璃)之間的附著力大於導線420與遮光層460之間的附著力,因此可以有效避免導線420剝落的情形。In the traditional process, the limitation of the material is that the metal wire is made on the light shielding layer. This manufacturing method causes a problem that the metal wires are peeled off due to poor adhesion between the metal wires and the light shielding layer of the organic material. However, in the present invention, since the low-reflection conductive layer is used as the material of the wire 420, the wire 420 may be formed on the substrate 410, and then the light-shielding layer 460 may be covered on the wire 420. Since the adhesion between the wire 420 and the substrate 410 (such as glass) is greater than the adhesion between the wire 420 and the light shielding layer 460, the peeling of the wire 420 can be effectively avoided.

本發明提供了一種應用低反射導電層的觸控面板,其可以降低金屬層的光線反射率而使其可視度降低,以減少因金屬反射而影響觸控面板顯示能力的問題。The invention provides a touch panel using a low-reflection conductive layer, which can reduce the light reflectance of the metal layer and reduce the visibility thereof, so as to reduce the problem that the display capability of the touch panel is affected by the metal reflection.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and retouched without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.

100‧‧‧低反射導電層100‧‧‧Low-reflective conductive layer

110‧‧‧金屬層110‧‧‧metal layer

120‧‧‧氧化物層120‧‧‧Oxide layer

130‧‧‧氮化物層130‧‧‧ nitride layer

Claims (20)

一種觸控面板,包含:一基板;以及一低反射導電層,設置於該基板上,該低反射導電層依序包含:一氧化物層;一氮化物層;以及一金屬層,其中該氧化物層設置於該氮化物層和該基板間,及該氮化物層設置於該金屬層以及該氧化物層之間,其中該金屬層、該氧化物層以及該氮化物層緊密接觸,該氧化物層與該氮化物層之間的厚度比例介於1:0.6至1:1.5之間。A touch panel includes: a substrate; and a low-reflection conductive layer disposed on the substrate, the low-reflection conductive layer sequentially includes: an oxide layer; a nitride layer; and a metal layer, wherein the oxidation a layer of the material is disposed between the nitride layer and the substrate, and the nitride layer is disposed between the metal layer and the oxide layer, wherein the metal layer, the oxide layer, and the nitride layer are in close contact, and the oxidation The thickness ratio between the layer and the nitride layer is between 1:0.6 and 1:1.5. 如請求項1所述之觸控面板,其中該氧化物層為金屬氧化物層,該氮化物層為金屬氮化物層。The touch panel of claim 1, wherein the oxide layer is a metal oxide layer, and the nitride layer is a metal nitride layer. 如請求項1所述之觸控面板,其中該氧化物層之厚度介於20奈米至100奈米之間,該氮化物層之厚度介於20奈米至100奈米之間,該金屬層之厚度介於50奈米至500奈米之間。The touch panel of claim 1, wherein the oxide layer has a thickness of between 20 nm and 100 nm, and the nitride layer has a thickness of between 20 nm and 100 nm. The thickness of the layer is between 50 nm and 500 nm. 如請求項1所述之觸控面板,其中該金屬層的材料為鉬,該氮化物層的材料為氮化鉬,該氧化物層的材料為氧化鉬。The touch panel of claim 1, wherein the material of the metal layer is molybdenum, the material of the nitride layer is molybdenum nitride, and the material of the oxide layer is molybdenum oxide. 如請求項4所述之觸控面板,其中該金屬層的厚度為90奈米,該氮化物層的厚度為40奈米,該氧化物層的厚度為40奈米。The touch panel of claim 4, wherein the metal layer has a thickness of 90 nm, the nitride layer has a thickness of 40 nm, and the oxide layer has a thickness of 40 nm. 如請求項1所述之觸控面板,其中該觸控面板為一導電網觸控面板,該低反射導電層包含一導電網結構,該導電網結構之導線線寬為2-10微米(μm)。The touch panel of claim 1, wherein the touch panel is a conductive mesh touch panel, and the low-reflection conductive layer comprises a conductive mesh structure, and the conductive mesh structure has a wire width of 2-10 micrometers (μm). ). 如請求項1所述之觸控面板,其中該氧化物層直接接觸該基板。The touch panel of claim 1, wherein the oxide layer directly contacts the substrate. 如請求項2所述之觸控面板,其中該金屬材料係選自鉬、銅、銀、鉻和鋁其中之一。The touch panel of claim 2, wherein the metal material is one selected from the group consisting of molybdenum, copper, silver, chromium, and aluminum. 如請求項1所述之觸控面板,其中該觸控面板為一單層式觸控面板,該低反射導電層包含複數個觸控單元,以及分別連接該些觸控單元的複數個導線。The touch panel of claim 1, wherein the touch panel is a single-layer touch panel, and the low-reflection conductive layer comprises a plurality of touch units, and a plurality of wires respectively connected to the touch units. 如請求項9所述之觸控面板,其中該些觸控單元包含一指狀單元,以及呈ㄇ字狀並與該指狀單元對向排列之複數個對向單元。The touch panel of claim 9, wherein the touch units comprise a finger unit, and a plurality of opposite units arranged in a U shape and aligned with the finger unit. 如請求項9所述之觸控面板,其中該些觸控單元為 矩形網格狀。The touch panel of claim 9, wherein the touch units are Rectangular grid shape. 如請求項11所述之觸控面板,其中該些導線為直線狀。The touch panel of claim 11, wherein the wires are linear. 如請求項11所述之觸控面板,其中該些導線為規則或不規則波浪狀。The touch panel of claim 11, wherein the wires are regular or irregularly wavy. 如請求項9所述之觸控面板,其中該些觸控單元為規則或不規則的波浪網狀。The touch panel of claim 9, wherein the touch units are in a regular or irregular wavy network. 如請求項14所述之觸控面板,其中該些導線為直線狀。The touch panel of claim 14, wherein the wires are linear. 如請求項14所述之觸控面板,其中該些導線為規則或不規則波浪狀。The touch panel of claim 14, wherein the wires are regular or irregularly wavy. 如請求項1所述之觸控面板,其中該觸控面板為一單片玻璃解決方案觸控面板,該低反射導電層包含複數個導線以及複數個架橋部,該單片玻璃解決方案觸控面板更包含:複數個絕緣層,局部覆蓋該些架橋部;以及複數個透明導電電極,設置於該基板上,其中部分的該些透明導電電極之間藉由該些架橋部連接,每一該些透 明導電電極分別連接至該些導線。The touch panel of claim 1, wherein the touch panel is a single-chip glass solution touch panel, the low-reflection conductive layer comprises a plurality of wires and a plurality of bridge portions, and the single-chip glass solution touches The panel further includes: a plurality of insulating layers partially covering the bridge portions; and a plurality of transparent conductive electrodes disposed on the substrate, wherein a portion of the transparent conductive electrodes are connected by the bridge portions, each of the Some The conductive electrodes are respectively connected to the wires. 如請求項17所述之觸控面板,其中該氧化物層直接接觸該基板。The touch panel of claim 17, wherein the oxide layer directly contacts the substrate. 如請求項17所述之觸控面板,更包含一遮光層,設置於該基板上並圍繞該些透明導電電極,其中該些導線位於該遮光層與該基板之間。The touch panel of claim 17, further comprising a light shielding layer disposed on the substrate and surrounding the transparent conductive electrodes, wherein the wires are located between the light shielding layer and the substrate. 如請求項17所述之觸控面板,其中該金屬層的材料為鉬,該氮化物層的材料為氮化鉬,該氧化物層的材料為氧化鉬。The touch panel of claim 17, wherein the material of the metal layer is molybdenum, the material of the nitride layer is molybdenum nitride, and the material of the oxide layer is molybdenum oxide.
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