TWI502748B - Method for fabricating tft array substrate - Google Patents

Description

Method for manufacturing thin film transistor substrate

The present invention relates to a method of fabricating a thin film transistor substrate.

The manufacturing method of the prior thin film transistor substrate generally comprises the following steps: Step 1: forming a gate metal layer; Step 2: forming a gate electrode; Step 3: forming a gate insulating layer; Step 4: forming a semiconductor layer in the gate On the pole insulating layer; step five: forming an etch barrier layer on the semiconductor layer; step six: forming a transparent conductive layer; step seven: forming a pixel electrode; step eight: forming source/drain electrodes; step nine: A pattern layer forming a passivation layer is on the pixel electrode and the source/drain electrodes.

The thin film transistor substrate requires a multi-pass mask process, and the mask process is usually complicated and costly, which results in high manufacturing cost.

In view of the above, it is necessary to provide a method for manufacturing a thin film transistor substrate which is simple in process.

A method for manufacturing a thin film transistor substrate, comprising: providing a substrate; sequentially forming a gate electrode, a gate insulating layer, a semiconductor layer, an etch barrier layer, a transparent conductive layer and a metal layer on the substrate; and providing a photoresist layer, The photoresist layer is coated on the metal layer, and the photoresist layer is exposed and developed by using a photomask to form a patterned photoresist layer. The patterned photoresist layer is thicker adjacent to the semiconductor layer and away from the semiconductor layer. Partial comparison Thin, then etching the metal layer until a portion of the etch stop layer is exposed; removing the remaining thin portion of the photoresist layer to expose a portion of the metal layer; etching the exposed metal layer to expose a portion of the transparent layer a conductive layer; and removing the photoresist layer.

In the above method for manufacturing a thin film transistor substrate, the formation of the source and the drain and the formation of the pixel electrode require only one photoresist layer, thereby saving the use of the primary photoresist layer, simplifying the process, and effectively reducing the cost. Further, since the transparent conductive layer is located between the metal layer and the gate insulating layer, the metal element of the barrier metal layer is diffused into the gate insulating layer, thereby improving the quality of the product.

100‧‧‧thin film substrate

10‧‧‧Substrate

20‧‧‧Gate

30‧‧‧Gate insulation

40‧‧‧Semiconductor layer

50‧‧‧ etching barrier

60‧‧‧Transparent conductive layer

70‧‧‧metal layer

80‧‧‧ patterned photoresist layer

90‧‧‧Protective layer

1 to 7 are schematic cross-sectional views showing a method of manufacturing a thin film transistor substrate according to an embodiment of the present invention.

FIG. 1 to FIG. 6 illustrate a method of fabricating a thin film transistor substrate 100 according to an embodiment of the present invention. The manufacturing method of the thin film transistor substrate 100 includes the following steps:

Step 1: Referring to Figure 1, a substrate 10 is provided. The substrate 10 is an insulating substrate, which may be an insulating material such as glass, quartz or ceramic. In the present embodiment, the substrate 10 is a glass substrate.

Step 2: A gate electrode 20, a gate insulating layer 30, a semiconductor layer 40, an etching stopper layer 50, a transparent conductive layer 60, and a metal layer 70 are sequentially formed on the substrate 10. The gate insulating layer 30 includes tantalum nitride and/or hafnium oxide. The transparent conductive layer 60 is an Indium Tin Oxide (ITO) film. The gate electrode 20 is formed by etching. In the present embodiment, the semiconductor layer 40 is also formed by etching, which is island-shaped and located directly above the gate electrode 20. The material of the semiconductor layer 40 includes an amorphous oxidized semiconductor material. Amorphous Oxide Semiconductor (AOS).

Step 3: Referring to FIG. 2 and FIG. 3, a photoresist layer is provided, and the photoresist layer is over the metal layer 70. Thereafter, the photoresist layer 80 is exposed and developed by a photomask (not shown) to form a patterned photoresist layer 80. The patterned photoresist layer 80 is thicker adjacent to the semiconductor layer 40, away from the semiconductor layer 40. The portion is thinner and the metal layer 70 is etched until a portion of the etch stop layer 50 is exposed. In this embodiment, the reticle is a halftone mask. A portion of the metal layer 70 above the semiconductor layer 40 is exposed, and a portion above the semiconductor layer 40 is etched away, thereby exposing the portion of the etch stop layer 50.

Step 4: Referring to FIG. 4, the remaining thinner portion of the patterned photoresist layer 80 is removed to expose a portion of the metal layer 70. In the present embodiment, a portion of the remaining patterned photoresist layer 80 is removed by dry etching.

Step 5: Referring to FIG. 5 together, the exposed metal layer 70 is etched to expose a portion of the transparent conductive layer 60. In the present embodiment, the transparent conductive layer 60 exposed is used as a pixel electrode of the thin film transistor substrate.

Step 6: Please refer to FIG. 6 together to remove the photoresist layer 80. In this embodiment, a portion of the metal layer 70 on the side of the semiconductor layer 40 and adjacent to the pixel electrode serves as a drain of the thin film transistor substrate, and the metal is located on the other side of the semiconductor layer 40. Layer 70 serves as the source of the thin film crystal substrate.

Step 7: Referring to FIG. 7, a protective layer 90 is formed covering the metal layer 70, the transparent conductive layer 60, and the exposed etching barrier layer 50, thereby forming the thin film transistor substrate 100.

In the above method of manufacturing the thin film transistor substrate 100, the source and the drain are formed in And the formation of the pixel electrode requires only one photoresist layer, thereby saving the use of the primary photoresist layer, simplifying the process, and effectively reducing the cost.

In addition, since the transparent conductive layer 60 is located between the metal layer 70 and the gate insulating layer 30, the metal element of the barrier metal layer 70 can be diffused into the gate insulating layer 30, thereby improving the quality of the product.

The technical and technical features of the present invention have been disclosed as above, and those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the present invention should be construed as being limited by the scope of the appended claims

100‧‧‧thin film substrate

50‧‧‧ etching barrier

60‧‧‧Transparent conductive layer

70‧‧‧metal layer

90‧‧‧Protective layer

Claims (6)

A method for fabricating a thin film transistor substrate, comprising: providing a substrate on which a gate electrode, a gate insulating layer, a semiconductor layer, an etch barrier layer, a transparent conductive layer and a metal layer are sequentially formed; and a photoresist layer is provided The photoresist layer is coated on the metal layer, and the photoresist layer is exposed and developed by using a photomask to form a patterned photoresist layer. The patterned photoresist layer is thicker adjacent to the semiconductor layer and away from the semiconductor layer. Partially thinner, the metal layer is etched until a portion of the etch stop layer is exposed; the remaining thinner portion of the photoresist layer is removed to expose a portion of the metal layer, the metal layer on one side of the semiconductor layer and An adjacent portion of the transparent electrode forms a drain of the thin film transistor substrate, and the metal layer on the other side of the semiconductor layer forms a source of the thin film crystal substrate; and the exposed metal layer is etched to expose a portion The transparent conductive layer, the transparent conductive layer exposed as the pixel electrode of the thin film transistor substrate; and the photoresist layer removed. The method for producing a thin film transistor substrate according to the above aspect of the invention, wherein the semiconductor layer comprises an amorphous oxide semiconductor material. The method for producing a thin film transistor substrate according to the first aspect of the invention, wherein the transparent conductive layer is an indium tin oxide film. The method for producing a thin film transistor substrate according to claim 1, wherein the mask is a halftone dot mask. The method for producing a thin film transistor substrate according to claim 1, wherein the transparent conductive layer is located between the metal layer and the semiconductor layer. The method for manufacturing a thin film transistor substrate according to the first aspect of the invention, wherein after the step of "removing the photoresist layer", the method further comprises the step of forming a protective layer to cover the metal layer and the transparent conductive layer. And an etch stop layer that is exposed.