TWI501921B - Three dimension graphene-like crystal element - Google Patents

Three dimension graphene-like crystal element Download PDF

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TWI501921B
TWI501921B TW102103911A TW102103911A TWI501921B TW I501921 B TWI501921 B TW I501921B TW 102103911 A TW102103911 A TW 102103911A TW 102103911 A TW102103911 A TW 102103911A TW I501921 B TWI501921 B TW I501921B
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TW201431781A (en
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Zi Gui Huang
Chun Fu Su
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Univ Nat Formosa
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三維類石墨烯晶體元件Three-dimensional graphene crystal element

本發明係有關於一種三維類石墨烯晶體元件,尤指一種以壓電材料利用濺鍍(sputter)沉積及氣膠噴鍍技術製成包括有鏈結桿及鏈結圓圍成主圍體之三維結構,而可做為調變式濾波元件與振盪器元件之應用的技術。The invention relates to a three-dimensional graphene crystal element, in particular to a piezoelectric material which is formed by using a sputter deposition and a gas-spray deposition technique, including a chain rod and a chain to form a main body. The three-dimensional structure can be used as a technique for the application of the modulation filter element and the oscillator element.

近數十幾年來,奈米材料蓬勃的發展,而現今最熱門的題材則為石墨烯,石墨烯是由碳原子組成六角形蜂窩狀的平面單層薄膜。而石墨烯一直被認為是假設性的結構,無法單獨存在,而在英國曼徹斯特大學物理學家Andre Geim和Konstantin Novoselov於2004年以「關於二維石墨烯材料的開創性實驗」用膠帶撥離法獲得由單一原子構成的石墨薄膜而獲得諾貝爾獎[1,2],由於石墨烯於光透性及電阻率相當小,電子跑的速度又比矽晶體快,因此可用來發展更薄、導電速度極快的電子元件和光子元件。自從20世紀初科學家就開始接觸石墨烯。在1918年,V.Kohlschütter和P.Haenni詳細地描述了石墨氧化物紙的性質(graphite oxide paper)(如附件1參考文獻[3]),而往後陸續幾十年間都有與石墨烯相關之各項研究提出(如附件1參考文獻[4-12])。In recent decades, nanomaterials have flourished, and today's hottest subject matter is graphene. Graphene is a planar single-layer film composed of carbon atoms in a hexagonal honeycomb shape. Graphene has always been considered a hypothetical structure and cannot exist alone. In 2004, the physicists Andre Geim and Konstantin Novoselov of the University of Manchester in the United Kingdom used the tape separation method in "The pioneering experiment on two-dimensional graphene materials". Obtaining the Nobel Prize for obtaining a graphite film composed of a single atom [1, 2], since graphene has a relatively small light transmittance and electrical resistivity, the speed of electron running is faster than that of germanium crystal, so it can be used to develop thinner and more conductive. Extremely fast electronic components and photonic components. Scientists have been exposed to graphene since the early 20th century. In 1918, V. Kohlschütter and P. Haenni described the graphite oxide paper in detail (as in Annex 1 [3]), and it has been associated with graphene for several decades. Various studies have been proposed (eg Annex 1 References [4-12]).

近三十年來,有關光子晶體(如附件1參考文獻[13])與聲子晶體(如附件1參考文獻[14-21])的研究文獻數量不斷攀升。從理論、數值與實驗分析上,各國研究團隊最感興趣的不再是什麼樣的材料搭配或是結構中的週期變化所引致的頻溝現象大小,而是在製程上可行且具有良好的頻溝效應下進行開發出新型聲波或是光波元件。對物理學者而言,週期性的結構下聲波或是光波的行為已眾所皆知;然而在工程上,能真正實現新型聲波、光波,亦或是其耦合元件的開發有待人們持續地專研。In the past three decades, the number of research literature on photonic crystals (such as Annex 1 Reference [13]) and phononic crystals (such as Annex 1 Reference [14-21]) has been increasing. From the theoretical, numerical and experimental analysis, the research team of all countries is most interested in what kind of material collocation or the frequency variation phenomenon caused by the periodic variation in the structure, but it is feasible in the process and has good frequency. A new type of acoustic or optical component was developed under the effect of the trench. For physicists, the behavior of sound waves or light waves under the periodic structure is well known; however, in engineering, the realization of new sound waves, light waves, or the development of their coupling components is subject to continuous research. .

製作壓電薄膜作為壓電振盪器及濾波器的主要材料大都以氧化鋅(ZnO)及氮化鋁(AlN)最為常用。以製作氧化鋅壓電薄膜為例,一般採用濺鍍方式將氧化鋅靶材沉積成壓電薄膜,及利用氣膠噴鍍系統將氧化鋅粉末沉積成壓電薄膜兩種方式,目前已有相當多的習知技術,利用此類的沉積方法成長氧化鋅壓電薄膜。本發明人針對最具發展潛力的石墨烯結構深入研究,做假設性類石墨烯結構設計,利用三維有限元素法給予週期性邊界設定並分析其振盪行為,並且分析在氧化鋅於類石墨烯週期性結構之頻溝現象與頻散曲線趨勢,進而有本發明的成果產出。As a main material for piezoelectric oscillators and filters, piezoelectric thin films are most commonly used for zinc oxide (ZnO) and aluminum nitride (AlN). Taking a zinc oxide piezoelectric film as an example, a zinc oxide target is deposited into a piezoelectric film by sputtering, and a zinc oxide powder is deposited into a piezoelectric film by a gas gel spraying system. A number of conventional techniques utilize such deposition methods to grow zinc oxide piezoelectric films. The inventors conducted in-depth research on the graphene structure with the most development potential, made hypothetical graphene structure design, used the three-dimensional finite element method to give periodic boundary setting and analyzed its oscillation behavior, and analyzed the zinc oxide-like graphene cycle. The frequency channel phenomenon of the sexual structure and the trend of the dispersion curve, and thus the results of the present invention are produced.

由於傳統石墨烯在製造上較為複雜,成本也較高。本發明人等有鑑於石墨烯深具發展潛力,藉由長期研究,乃構想一種類石墨烯結構。本發明研究過程中,分析出以壓電材料利用現有濺鍍沉積及氣膠噴鍍技術來製成類石墨烯結構,其可行性最高,可有效降低成本,廣泛地運用於振盪器元件、濾波器感測元件、高精密系統以及探頭的設計與製造。Since conventional graphene is complicated in manufacturing, the cost is also high. The inventors of the present invention have conceived a graphene-like structure by long-term research in view of the great development potential of graphene. In the research process of the invention, it is analyzed that the piezoelectric material is made into a graphene-like structure by using the existing sputter deposition and gas-spray deposition technology, which has the highest feasibility, can effectively reduce the cost, and is widely used for oscillator components and filtering. Design and manufacture of sensing components, high precision systems and probes.

本發明主要目的,在於研發一種廣泛地運用於振盪器元件、濾波器感測元件、高精密系統以及探頭的設計與製造之三維類石墨烯晶體元件。本發明之技術手段,係由複數個佈列於正六邊形陣列之主圍體所構成的類石墨烯晶體結構,其包含有複數個主圍體。該複數個主圍體呈矩形陣列地分佈於一平面上,每一主圍體相對平面具有一預定厚度並沿著一正六邊形環繞,每一主圍體包括有複數個鏈結桿及複數個鏈結圓,每一鏈結桿呈板片狀,每一鏈結圓呈圓柱形。該複數個鏈結桿依序位於該正六邊形的各邊,該複數個鏈結圓依序位於該正六邊形的各角點,亦即,每兩相鄰的鏈結桿一端匯接於一鏈結圓的周面。每一該主圍體至少有二邊是與其相鄰的二該主圍體共邊。中心點位在同一橫向線X的連續五個該主圍體及中心點位在同一縱向線Y的連續三個該主圍體形成一主陣列,該主陣列中央具一鏤空部,該鏤空部使該主陣列的五個該主圍體相通,而形成主陣列中央具有單一缺陷之三維類石墨烯晶體結構。藉由前述構造所構成之三維類石墨烯晶體結構,具有超大帶隙效應,且有多個共振模態位於頻溝內,故而可供應用於振盪器元件、濾波器感測元件、高精密系統及探頭的設計 與製造之晶體元件。SUMMARY OF THE INVENTION A primary object of the present invention is to develop a three-dimensional graphene-like crystal element that is widely used in the design and manufacture of oscillator components, filter sensing components, high-precision systems, and probes. The technical means of the present invention is a graphene-like crystal structure composed of a plurality of main enclosures arranged in a regular hexagonal array, which comprises a plurality of main enclosures. The plurality of main enclosures are distributed in a rectangular array on a plane, each main enclosure has a predetermined thickness relative to the plane and is surrounded by a regular hexagon. Each main enclosure includes a plurality of linkages and a plurality of links Each chain is round, each of the links is in the form of a plate, and each chain is round in shape. The plurality of link bars are sequentially located on each side of the regular hexagon, and the plurality of link circles are sequentially located at each corner of the regular hexagon, that is, one end of each two adjacent link bars is connected to each other. A chain of rounded circumferences. Each of the main enclosures has at least two sides that are adjacent to the two adjacent main enclosures. The five consecutive main enclosures with the center point of the same transverse line X and the three consecutive main enclosures of the same longitudinal line Y form a main array, and the hollow center of the main array has a hollow portion. The five main bodies of the main array are communicated to form a three-dimensional graphene crystal structure having a single defect in the center of the main array. The three-dimensional graphene crystal structure formed by the foregoing structure has a large band gap effect, and a plurality of resonance modes are located in the frequency groove, so that it can be applied to an oscillator element, a filter sensing element, and a high-precision system. And probe design And manufactured crystal components.

10,10a‧‧‧主圍體10,10a‧‧‧main body

11,11a,11b,11c,11d‧‧‧鏈結桿11,11a,11b,11c,11d‧‧‧links

12,12a,12b,12c‧‧‧鏈結圓12,12a,12b,12c‧‧‧chain circle

20‧‧‧鏤空部20‧‧‧镂空部

31‧‧‧第一平行線31‧‧‧ first parallel line

32‧‧‧第二平行線32‧‧‧second parallel line

33‧‧‧第三平行線33‧‧‧ third parallel line

34‧‧‧矩形34‧‧‧Rectangle

X‧‧‧橫向線X‧‧‧ horizontal line

Y‧‧‧縱向線Y‧‧‧ vertical line

圖1為本發明三維類石墨烯結構5N3M單一缺陷(自然振動)立體示意圖。1 is a schematic perspective view of a single defect (natural vibration) of a three-dimensional graphene structure 5N3M according to the present invention.

圖2為本發明三維類石墨烯結構之單一主圍體的立體示意圖。2 is a schematic perspective view of a single main body of a three-dimensional graphene structure according to the present invention.

圖3為本發明三維類石墨烯結構之單一主圍體的平面示意圖。3 is a schematic plan view showing a single main body of a three-dimensional graphene structure according to the present invention.

圖4為本發明三維類石墨烯結構5N3M單一缺陷(真實模型邊界設定)立體示意圖。4 is a schematic perspective view of a single defect (real model boundary setting) of a three-dimensional graphene structure 5N3M according to the present invention.

圖5為本發明三維類石墨烯結構單晶胞頻散曲線圖(0~25 MHz)。Fig. 5 is a graph showing the cell dispersion of a three-dimensional graphene structure single crystal according to the present invention (0 to 25 MHz).

圖6為本發明三維類石墨烯結構5N3M與單晶胞頻散曲線比對(16~17.6 MHz)。Figure 6 is a comparison of the three-dimensional graphene structure 5N3M with single crystal cell dispersion curves (16~17.6 MHz).

圖7為本發明三維類石墨烯結構5N3N與單晶胞頻散曲線(在上表面給予1V電壓激振,下接地)(橫軸為簡約波矢向量(kx=0~0.5),縱軸為頻率,單位為MHz)。7 is a three-dimensional graphene structure 5N3N and single crystal cell dispersion curve (1V voltage excitation on the upper surface, grounding) (the horizontal axis is a simple wave vector vector (kx=0~0.5), and the vertical axis is Frequency in MHz).

圖8為本發明超晶格5N3M單一缺陷頻散曲線與頻率響應比對圖(16.25~16.3 MHz)。Figure 8 is a comparison diagram of the single-cavity dispersion curve and frequency response of the superlattice 5N3M of the present invention (16.25~16.3 MHz).

圖9為本發明類石墨烯超晶格週期結構受電壓激振的頻率響應曲線(a1點)。Fig. 9 is a graph showing the frequency response curve of the graphene superlattice periodic structure subjected to voltage excitation (point a1).

圖10為本發明類石墨烯超晶格週期結構受電壓激振的頻率響應曲線(a2點)。Figure 10 is a graph showing the frequency response curve of the graphene superlattice periodic structure subjected to voltage excitation (point a2).

圖11為本發明類石墨烯超晶格週期結構受電壓激振的頻率響應曲線(a3點)。Figure 11 is a graph showing the frequency response curve of the graphene superlattice periodic structure subjected to voltage excitation (point a3).

圖12為本發明類石墨烯超晶格週期結構受電壓激振的頻率響應曲線(b1點)。Figure 12 is a graph showing the frequency response curve of the graphene superlattice periodic structure subjected to voltage excitation (point b1).

圖13為本發明類石墨烯超晶格週期結構受電壓激振的頻率響應曲線(b2點)。Figure 13 is a graph showing the frequency response curve of the graphene superlattice periodic structure subjected to voltage excitation (point b2).

圖14為本發明類石墨烯超晶格週期結構受電壓激振的頻率響應曲線(b3點)。Figure 14 is a graph showing the frequency response curve of the graphene superlattice periodic structure subjected to voltage excitation (point b3).

附件1:參考文獻。Annex 1: References.

I.本發明的技術概念。I. The technical concept of the present invention.

本發明主要是將無限週期聲子晶體取最小單元反應出平移週期性與空間對稱性。以氧化鋅壓電材料配合現有成熟的濺鍍沉積及氣膠噴鍍技術方法,製成具有單晶胞缺陷的本發明所謂之三類石墨烯結構。利用Bloch’s定理與平面波展開法,將方程實空間做複立葉級數展開,使得能帶簡約成數個特徵值,進而求得聲子晶體的能帶結構。經模擬分析驗證本發明之三維類石墨烯晶體結構,為一具有超大帶隙聲子晶體結構,且有多個共振模態位於頻溝內,可供應用於振盪器元件、濾波器感測元件、高精密系統及探頭的設計與製造之晶體元件。The invention mainly aims to take the infinite periodic phononic crystal into a minimum unit to reflect the translational periodicity and spatial symmetry. The so-called three types of graphene structures of the present invention having single crystal cell defects are prepared by a zinc oxide piezoelectric material in combination with existing mature sputtering deposition and gas gel plating techniques. Using Bloch's theorem and plane wave expansion method, the real space of the equation is expanded into a complex leaf series, so that the band can be reduced into several eigenvalues, and the energy band structure of the phononic crystal is obtained. The three-dimensional graphene crystal structure of the present invention is verified by simulation analysis, and has an ultra-large band gap phononic crystal structure, and a plurality of resonance modes are located in the frequency groove, and can be applied to an oscillator component and a filter sensing component. Crystal components for the design and manufacture of high-precision systems and probes.

Ⅱ.本發明的基本技術特徵。II. The basic technical features of the present invention.

請參看圖1至4所示,本發明所提出的類石墨烯晶體結構,其基本技術特徵係包含有複數個主圍體10。該複數個主圍體10呈矩形陣列地分佈於一平面上,每一該主圍體10相對該平面具有一預定厚度並沿著一正六邊形環繞,每一該主圍體10包括有複數個鏈結桿11及複數個鏈結圓12,每一鏈結桿11呈板片狀,每一鏈結圓12呈圓柱形(其軸線與正六邊形垂直)。該複數個鏈結桿11依序位於該正六邊形的各邊,該正六邊形各邊分別位於一鏈結桿11的中軸線上。該複數個鏈結圓12依序位於該正六邊形的各角點,該正六邊形各角點分別位於一鏈結圓12的圓心。每兩相鄰的鏈結桿11一端密實地匯接於一鏈結圓12的周面。本發明一種較佳實施例中,該複數個主圍體10沿著一橫向線X呈多排且沿著一縱向線Y呈多列的正矩陣分佈,每一該主圍體10與沿著該橫向線X而相鄰的至少一該主圍體10共用一該鏈結桿11,而且每一該主圍體10二對邊的該鏈結桿11相互平行。位在矩陣內圍區域的每一該主圍體10有二對邊的該鏈結桿11是與沿著該橫向線X而相鄰的二該主圍體10分別共用一該鏈結桿11。再者,沿著該縱向線Y而相鄰的二該主圍體10的至少一該鏈結圓12以一該鏈結桿 11密實地連接。中心點位在同一橫向線X的連續五個該主圍體10及中心點位在同一縱向線Y的連續三個該主圍體10形成一主陣列,該主陣列中央具一至少沿著一完整正六邊形去除所形成的鏤空部20,該鏤空部20使該主陣列的中央五個該主圍體10相通,而形成主陣列中央具有單一缺陷之三維類石墨烯晶體結構。Referring to FIGS. 1 to 4, the graphene-like crystal structure proposed by the present invention has a basic technical feature including a plurality of main enclosures 10. The plurality of main enclosures 10 are distributed in a rectangular array on a plane, each of the main enclosures 10 having a predetermined thickness with respect to the plane and surrounding a regular hexagon, each of the main enclosures 10 including a plurality of Each of the link bars 11 and the plurality of link circles 12 each have a plate shape, and each of the link circles 12 has a cylindrical shape (the axis of which is perpendicular to the regular hexagon). The plurality of link bars 11 are sequentially located on each side of the regular hexagon, and the sides of the regular hexagon are respectively located on the central axis of a link bar 11. The plurality of link circles 12 are sequentially located at respective corner points of the regular hexagon, and the corner points of the regular hexagon are respectively located at the center of a chain circle 12. One end of each two adjacent link rods 11 is densely joined to the circumferential surface of a chain circle 12. In a preferred embodiment of the present invention, the plurality of main enclosures 10 are arranged in a plurality of rows along a transverse line X and are arranged in a plurality of columns along a longitudinal line Y, each of the main enclosures 10 along The transverse line X and at least one of the adjacent main enclosures 10 share one of the link bars 11, and the link bars 11 of the opposite sides of each of the main enclosures 10 are parallel to each other. Each of the link bars 11 having two opposite sides of the main body 10 in the inner circumference of the matrix is shared with the main body 10 adjacent to the transverse line X, and the link rod 11 is shared by the main body 10 . Furthermore, at least one of the link circles 12 of the two main body bodies 10 adjacent to the longitudinal line Y is a link rod 11 densely connected. The main five surrounding main body 10 of the same lateral line X and the three consecutive main body 10 of the same longitudinal line Y form a main array, and the main array has at least one along the center The complete regular hexagon removes the formed hollow portion 20, which communicates with the center five of the main arrays 10 of the main array to form a three-dimensional graphene crystal structure having a single defect in the center of the main array.

Ⅲ.本發明的具體實施例。III. Specific embodiments of the invention.

如圖1至3所示,為本發明之三維類石墨烯晶體結構的具體結構,其單一晶格屬於六角型結構,亦即單一主圍體10沿著一正六邊形環繞。圖示例中,複數個主圍體10沿著一橫向線X呈多排且沿著一縱向線Y呈多列的正矩陣分佈,每一該主圍體10與沿著該橫向線X而相鄰的至少一該主圍體10共用一該鏈結桿11,而且每一該主圍體10二對邊的該鏈結桿11相互平行。位在矩陣內圍區域的每一該主圍體10有二對邊的該鏈結桿11是與沿著該橫向線X而相鄰的二該主圍體10分別共用一該鏈結桿11。再者,沿著該縱向線Y而相鄰的二主圍體10的一鏈結圓12分別以一鏈結桿11密實地連接,使沿著縱向線Y及橫向線X而相鄰的四主圍體10之間也形成一沿著一正六邊形環繞的相同主圍體10,進而使全部的主圍體10呈同一規格晶胞且呈蜂巢狀結構佈列。其中,中心點位在同一橫向線X的連續五個該主圍體10及中心點位在同一縱向線Y的連續三個該主圍體10形成一主陣列,該主陣列中央具一鏤空部20,該鏤空部20使該主陣列的中央五個該主圍體10相通,而形成主陣列中央具有單一缺陷之三維類石墨烯晶體結構。As shown in FIGS. 1 to 3, the specific structure of the three-dimensional graphene crystal structure of the present invention has a single crystal lattice belonging to a hexagonal structure, that is, a single main enclosure 10 is surrounded by a regular hexagon. In the illustrated example, a plurality of main enclosures 10 are arranged in a plurality of rows along a transverse line X and in a plurality of columns along a longitudinal line Y, each of the main enclosures 10 and along the transverse line X. At least one of the adjacent main enclosures 10 shares one of the link bars 11, and the link bars 11 of the opposite sides of each of the main enclosures 10 are parallel to each other. Each of the link bars 11 having two opposite sides of the main body 10 in the inner circumference of the matrix is shared with the main body 10 adjacent to the transverse line X, and the link rod 11 is shared by the main body 10 . Furthermore, a chain circle 12 of the two main enclosures 10 adjacent to the longitudinal line Y is densely connected by a link rod 11 so that four adjacent to the longitudinal line Y and the transverse line X are adjacent. A main main body 10 surrounded by a regular hexagon is also formed between the main surrounding bodies 10, so that all the main surrounding bodies 10 are in the same size unit cell and arranged in a honeycomb structure. Wherein, the main five surrounding main body 10 with the center point of the same transverse line X and the three consecutive main body 10 of the same longitudinal line Y form a main array, and the central part of the main array has a hollow portion 20. The hollow portion 20 connects the central five surrounding main bodies 10 of the main array to form a three-dimensional graphene crystal structure having a single defect in the center of the main array.

本具體實施例中,該鏤空部20除去了位在該主陣列中央之一該主圍體10a中心點位在一第一平行線31上的二個該鏈結圓12a全部、中心點位在一第二平行線32上的二個該鏈結圓12b一半、中心點位在一第三平行線33上的二個該鏈結圓12c一半、該主圍體10a上連接相鄰且分別位在該第一平行線31與該第二平行線32上之二鏈結圓12a/12b的該鏈結桿11a全部、該主圍體10a上連接相鄰且分別位在該第一平行線31與該第三平行線33上之二鏈結圓12a/12c的該鏈結桿11b全部、該主圍體10a上連接相鄰且同位在該第二平行線32上之二鏈結圓12b的該鏈結桿11c一半 及該主圍體10a上連接相鄰且同位在該第三平行線33上的該鏈結桿11d一半,該第一平行線31、該第二平行線32、該第三平行線33及該縱向線Y相互平行。In this embodiment, the hollow portion 20 removes all of the two link circles 12a located at a center point of the main enclosure 10a at a center of the main array on a first parallel line 31, and the center point is Two half of the chain circle 12b on a second parallel line 32, two half of the chain circle 12c with a center point on a third parallel line 33, and the main body 10a are adjacently connected and respectively The link bars 11a of the two parallel links 12a/12b on the first parallel line 31 and the second parallel line 32 are all adjacent to the main body 10a and are respectively located on the first parallel line 31. All of the link rods 11b of the two-chain loops 12a/12c on the third parallel line 33, and the two-chain loops 12b adjacent to the main parallel body 10a and adjacent to the second parallel line 32 The link rod 11c half And the main surrounding body 10a is connected to the half of the connecting rod 11d adjacent to the third parallel line 33, the first parallel line 31, the second parallel line 32, the third parallel line 33 and the The longitudinal lines Y are parallel to each other.

圖2及圖3分別為圖1中所示之本發明類石墨烯晶體結構(類網狀結構)中切割出單一主圍體10晶胞(週期)結構的立體及平面示意圖。如圖2、3所示,本具體實施例中,其主圍體10係沿著正六邊形環繞,正六邊形邊長為0.2mm,鏈結圓12半徑為0.075mm、鏈結桿11寬度0.02mm。2 and 3 are respectively a perspective and plan view showing the structure of a single main body 10 unit cell (period) in the graphene-like crystal structure (network-like structure) of the present invention shown in FIG. As shown in FIG. 2 and FIG. 3, in the specific embodiment, the main enclosure 10 is surrounded by a regular hexagon, the side of the regular hexagon is 0.2 mm, the radius of the chain circle 12 is 0.075 mm, and the width of the link 11 is 0.02mm.

本具體實施例中,鄰接該鏤空部20的該主圍體10上用來連接位在該第一平行線31上之該鏈結圓12a的該鏈結桿11被去除一半段。本具體實施例中,被去除一半段之該鏈結桿11的末端面為一平面,該平面與該鏈結桿11的中軸線相互垂直。本具體實施例中,該鏤空部20係沿著一矩形34去除。In the present embodiment, the link rod 11 of the main enclosure 10 adjacent to the hollow portion 20 for connecting the link circle 12a positioned on the first parallel line 31 is removed by half. In the present embodiment, the end face of the link rod 11 that has been removed by half is a plane which is perpendicular to the central axis of the link rod 11. In the specific embodiment, the hollow portion 20 is removed along a rectangle 34.

本發明之三維類石墨烯晶體結構,其單層初基單胞材料為氧化鋅,除了主圍體10所構成的晶體結構之外,其它部位為真空狀態。由於氧化鋅材料是一種壓電材料,當提供電壓驅動時,產生壓電效應,利用週期性傳遞特性於兩種不同材料做無限傳遞,本發明之三維類石墨烯結構即可利用壓電效應產生頻率振盪,進而觀察其帶隙效應,分析其應用於振盪器元件、濾波器感測元件、高精密系統及探頭的設計與製造之晶體元件的可行性。In the three-dimensional graphene crystal structure of the present invention, the single-layer primary unit cell material is zinc oxide, and the other portions are in a vacuum state except for the crystal structure composed of the main surrounding body 10. Since the zinc oxide material is a piezoelectric material, when a voltage is driven, a piezoelectric effect is generated, and the periodic transfer characteristic is used for infinite transfer of two different materials, and the three-dimensional graphene structure of the present invention can be generated by a piezoelectric effect. Frequency oscillation, and then observe its band gap effect, analyze its feasibility for the design and manufacture of crystal components for oscillator components, filter sensing components, high-precision systems and probes.

Ⅳ.參數設計與頻溝分析。IV. Parameter design and frequency channel analysis.

本發明所研發的三維類石墨烯晶體結構,在本發明的模擬分析中,類石墨烯晶體結構中的主圍體10所環繞的正六邊形,確實具有功效。以下茲將前述的正六邊形之具體結構及分析結果做詳細的敘述。The three-dimensional graphene crystal structure developed by the present invention, in the simulation analysis of the present invention, the regular hexagon surrounded by the main body 10 in the graphene-like crystal structure does have an effect. The specific structure and analysis results of the aforementioned regular hexagon are described in detail below.

如圖4所示,為本發明三維類石墨結構5N×3M超晶格單一缺陷示意圖,係利用氧化鋅壓電材料製成三維類石墨烯晶體結構,此超晶格結構是由單晶胞所組成的週期結構,其中將超晶格結構中間去除單晶胞單元,引入缺陷則會在無缺陷晶體頻散曲線圖中反應出缺陷帶的新能帶曲線,而此缺陷帶的特徵模態則會完全局限在無缺陷結構帶隙中。邊界設定 方面上表面給於1V電極激振、下表面接地。利用Bloch’s定理與有限元素法分析,進而求得聲子晶體的頻溝現象。As shown in FIG. 4 , a schematic diagram of a single defect of a 5N×3M superlattice of a three-dimensional graphite-like structure according to the present invention is a three-dimensional graphene crystal structure formed by using a zinc oxide piezoelectric material, and the superlattice structure is composed of a single crystal cell. a periodic structure in which the single crystal cell is removed in the middle of the superlattice structure, and the defect is introduced, and the new energy band curve of the defect band is reflected in the defect-free crystal dispersion curve, and the characteristic mode of the defect band is Will be completely confined to the band gap of the defect-free structure. Boundary setting On the upper surface, the 1V electrode is excited and the lower surface is grounded. The Bloch's theorem and the finite element method are used to analyze the frequency channel phenomenon of the phononic crystal.

如圖5所示,為本發明三維類石墨烯結構單晶胞頻散曲線圖,其範圍為0~25 MHz,不施於任何未加負載下,可發現有三個全頻溝效應產生,頻溝範圍分別為6.236~6.457 MHz、9.998~10.123 MHz、16.286~17.254 MHz,縱軸為頻率,單位MHz,橫軸為簡約空間向量。As shown in FIG. 5, it is a graph of cell dispersion of a three-dimensional graphene structure single crystal according to the present invention, and the range thereof is 0 to 25 MHz. When not applied to any unloaded, three full-frequency groove effects can be found, and the frequency is The range of the groove is 6.236~6.457 MHz, 9.98~10.123 MHz, 16.286~17.254 MHz, the vertical axis is the frequency, the unit is MHz, and the horizontal axis is the simple space vector.

因為氧化鋅帶隙現象極為顯著,且現今製程方面可行性高,而氧化鋅於石墨烯結構上的應用屬於較為新穎的材料,在理論分析上較為不易達成,因此可利用有限元素分析方法進行模擬。本發明主要針對三維類石墨烯結構於正六邊形類石墨烯結構模擬頻溝效應,而暫時不考慮覆蓋電極影響。Because the band gap phenomenon of zinc oxide is extremely significant, and the feasibility of current process is high, and the application of zinc oxide to graphene structure is a relatively novel material, which is difficult to achieve in theoretical analysis, so it can be simulated by finite element analysis method. . The invention mainly aims at simulating the frequency channel effect of the three-dimensional graphene structure on the regular hexagonal graphene structure, and temporarily does not consider the influence of the cover electrode.

如圖6所示,為本發明初基單胞與超晶格結構在不給予電壓激振的頻散曲線,其中實心圓形為超晶格5N×3M含一缺陷結構的頻散曲線,而空心菱形為初基單胞的頻散曲線,縱軸為觀察頻率範圍16~17.6 MHz,橫軸為簡約波矢向量Γ-X-M-Y-Γ。由此圖可發現超晶格結構在拿掉一個初基單胞結構時,其頻溝效應的邊界最大值與最小值都與初基單胞自然振動下所產生頻溝效應的位置互相吻合,且在引入缺陷結構之後會在全頻溝範圍內產生一條或一條以上的特徵值,由此圖就可發現在16.29~17.25 MHz之間有三個以上的缺陷特徵值其範圍為16.61~16.62 MHz、16.92~16.93 MHz、17.19~17.20 MHz。As shown in FIG. 6, the dispersion curve of the initial unit cell and the superlattice structure of the present invention is not given voltage excitation, wherein the solid circle is a dispersion curve of the superlattice 5N×3M containing a defect structure, and The hollow diamond is the dispersion curve of the initial unit cell, the vertical axis is the observation frequency range of 16~17.6 MHz, and the horizontal axis is the simple wave vector vector Γ-XMY-Γ. From this figure, it can be found that when the superlattice structure is removed, a maximum and minimum boundary value of the frequency channel effect coincides with the position of the frequency groove effect generated by the natural vibration of the initial unit cell. And after introducing the defect structure, one or more eigenvalues are generated in the full frequency groove range, and thus the figure can find that there are more than three defect eigenvalues between 16.29 and 17.25 MHz, and the range is 16.61~16.62 MHz, 16.92~16.93 MHz, 17.19~17.20 MHz.

如圖7所示,為本發明三維類石墨烯結構5N3M單一缺陷特徵頻率曲線圖,針對圖4中全頻溝效應較佳的頻溝範圍15.7~17.5 MHz探討缺陷帶的特徵模態,可發現在缺陷結構的特徵模態都被局限於單晶胞的全頻溝範圍內;由圖7得到其範圍為1.6279~1.6280 MHz跟1.6554~1.6557 MHz分別各有兩個值,由於在全頻溝範圍內任何的彈性波都無法傳遞,缺陷特徵模態對應頻率彈性波就被局限在點缺陷,或是線缺陷傳播,因此聲子晶體缺陷結構能被應用於約束波傳和控制波傳方向。壓電材料的逆壓電效應當施與電壓時,氧化鋅會受到電極影響而變形產生穩定的共振頻率,則此逆壓電轉換特性會與一般自然振動有所差異。圖7為三維類石墨烯結構 電極激振下共振頻率曲線圖(unitcell,supercell),特徵頻率範圍15.7~17.5 MHz,其中實心原點曲線為初基單胞受電壓激振的共振模態,而空心圓圈為超晶格結構受電壓激振的共振模態。因為含缺陷的聲子晶體其缺陷模態會在無缺陷晶體中反應出新的能帶曲線,所以觀超晶格結構的缺陷模態只需針對初基單胞頻溝範圍作分析,就可得到缺陷模態的變化而縮減分析的時間。As shown in FIG. 7 , which is a characteristic curve of a single defect characteristic frequency of a three-dimensional graphene structure according to the present invention, the characteristic mode of the defect band is discussed for a preferred frequency groove range of 15.7 to 17.5 MHz in FIG. 4 . The characteristic modes of the defect structure are limited to the full-frequency groove of the single crystal cell; the range of 1.6279~1.6280 MHz and 1.6554~1.6557 MHz respectively has two values, as in the full-frequency groove range. Any elastic wave can not be transmitted, and the defect characteristic mode corresponding to the frequency elastic wave is confined to the point defect or the line defect propagation, so the phononic crystal defect structure can be applied to the constrained wave transmission and the control wave transmission direction. Inverse Piezoelectric Effect of Piezoelectric Material When a voltage is applied, zinc oxide is deformed by the electrode to produce a stable resonant frequency, and the inverse piezoelectric conversion characteristic is different from the general natural vibration. Figure 7 is a three-dimensional graphene structure The resonance frequency curve (unitcell, supercell) under the excitation of the electrode has a characteristic frequency range of 15.7~17.5 MHz. The solid origin curve is the resonance mode of the initial unit cell subjected to voltage excitation, and the open circle is the superlattice structure. The resonant mode of voltage excitation. Because the defect mode of the phononic crystal containing defects will reflect a new energy band curve in the defect-free crystal, the defect mode of the superlattice structure can be analyzed only for the range of the initial unit cell frequency groove. The change in defect mode is obtained to reduce the time of analysis.

如圖8所示,為本發明在給於1V電極條件作用下,三維類石墨烯結構缺陷帶的能帶結構圖。由此圖可發現在16.54~16.57 MHz範圍內有兩的缺陷模態,分別為1.6554 MHz跟1.6556 MHz。由此圖可得知兩個缺陷模態均為一條的超平帶,且在兩缺陷模態上下範圍均無特徵模態,證實可利用缺陷結構將彈性波波傳局限於該頻率上,沿著此缺陷平帶做波傳傳遞。圖8為類石墨烯超晶格週期結構受電極激振頻散曲線圖,如圖8所示頻率範圍為16.54~16.57 MHz,會發現具有兩條超平帶現象出現,分別為16.554 MHz跟16.556 MHz。且在兩缺陷模態上下範圍均無特徵模態,則可利用缺陷結構將彈性波波傳局限於該頻率上,沿著此缺陷平帶做波傳傳遞。橫軸為簡約空間向量Γ-X,縱軸為波傳時間頻率,單位為MHz。As shown in FIG. 8, it is an energy band structure diagram of a three-dimensional graphene structure defect band under the action of the 1V electrode condition of the present invention. From this figure, it can be found that there are two defect modes in the range of 16.54~16.57 MHz, which are 1.6554 MHz and 1.6556 MHz respectively. From this figure, we can see that the two defect modes are one super-flat band, and there is no characteristic mode in the upper and lower range of the two defect modes, which proves that the elastic wave can be limited to the frequency by using the defect structure. This defect flat band is transmitted as a wave. Figure 8 is a graph showing the excitation dispersion of the graphene-like superlattice periodic structure. As shown in Figure 8, the frequency range is 16.54~16.57 MHz. Two super-flat bands appear, which are 16.554 MHz and 16.556, respectively. MHz. Moreover, there is no characteristic mode in the upper and lower ranges of the two defect modes, and the defect structure can be used to limit the elastic wave wave to the frequency, and the wave band transmission is performed along the defect flat band. The horizontal axis is the reduced space vector Γ-X, and the vertical axis is the wave transmission time frequency in MHz.

由於壓電材料透過電壓加載讓材料晶格產生變形,則此變形會產生穩定的共振頻率。如圖9至11所示,為本發明缺陷週期結構上表面給於1V電極,下表面接地的真實物體邊界設定,當施加電壓之後的頻率響應圖。某些模態會受到電壓加載產生低阻抗的共振頻率,黑色實心圓為低阻抗激振點,橫軸為導納(阻抗的倒數),縱軸為頻率,單位為MHz。圖9至11的電極激振圖分別對應圖8的a1、a2、a3此三點為一超平帶,且此同超平帶頻率上(1.6554 MHz)之簡約空間頻率的共振模態均為一致。圖9至圖11為類石墨烯超晶格週期結構受電壓激振的頻率響應曲線,掃頻頻率範圍16.54~16.57MHz,掃頻間距1Hz,可發現此該超平帶激振頻率大約均為16.55398~16.5540 MHz。由圖可發現a1、a2、a3三點其頻率響應曲線趨勢走向都一致符合,證明引入缺陷結構會產生超平帶的現象產生,且在該激振頻率上下範圍均無特徵模態被激振,則此彈性波被局限於點缺陷處無法做傳播。Since the piezoelectric material deforms the lattice of the material by voltage loading, the deformation produces a stable resonant frequency. As shown in FIGS. 9 to 11, the upper surface of the defect periodic structure of the present invention is given to the 1V electrode, and the real surface boundary of the lower surface is set to the frequency response diagram after the voltage is applied. Some modes are subject to voltage loading to produce a low impedance resonant frequency, a black solid circle is the low impedance excitation point, the horizontal axis is the admittance (reciprocal of the impedance), and the vertical axis is the frequency in MHz. The electrode excitation diagrams of Figures 9 to 11 correspond to a1, a2, and a3 of Fig. 8 respectively, and the three points are a super-flat band, and the resonant modes of the simple spatial frequency at the super-flat band frequency (1.6554 MHz) are both Consistent. Figure 9 to Figure 11 show the frequency response curve of the graphene superlattice periodic structure subjected to voltage excitation. The sweep frequency range is 16.54~16.57MHz, and the sweep frequency is 1Hz. It can be found that the super-flatband excitation frequency is about 16.55398~16.5540 MHz. It can be seen from the figure that the three-point a1, a2, and a3 have consistent frequency trend curves, which proves that the introduction of the defect structure will produce a super-flat band phenomenon, and no characteristic modes are excited in the upper and lower ranges of the excitation frequency. , the elastic wave is limited to the point defect and cannot be propagated.

如圖12至14所示,為缺陷週期結構上表面給於1V電極,下表面接地的真實物體邊界設定,當施加電壓之後的頻率響應圖。某些模態會受到電壓加載產生低阻抗的共振頻率,黑色實心圓為低阻抗激振點,橫軸為導納(阻抗的倒數),縱軸為頻率,單位為MHz。圖12至14的電極激振圖分別對應圖8的b1、b2、b3此三點為一超平帶,且此同超平帶頻率上(1.6556 MHz)之簡約空間頻率的共振模態均為一致。圖12至圖14為另一條超平帶頻率響應,而超平帶激振頻率大約均為16.55616~16.55617 MHz,其中三個簡約空間向量的頻率響應激振點,剛好對應圖8中b1、b2、b3共振頻率。由圖9至圖11與圖12至圖14兩組頻率響應圖發現兩超平帶頻率-導納曲線趨勢俏好互相對稱,藉此達到動態平衡。As shown in FIGS. 12 to 14, the upper surface of the defect period structure is given to the 1V electrode, and the real surface boundary of the lower surface is set to the frequency response map after the voltage is applied. Some modes are subject to voltage loading to produce a low impedance resonant frequency, a black solid circle is the low impedance excitation point, the horizontal axis is the admittance (reciprocal of the impedance), and the vertical axis is the frequency in MHz. The electrode excitation diagrams of Figures 12 to 14 correspond to the b1, b2, and b3 of Figure 8 respectively. The three points are a super-flat band, and the resonant modes of the simple spatial frequency at the super-flat band frequency (1.6556 MHz) are both Consistent. Figure 12 to Figure 14 show another super-flatband frequency response, and the super-flatband excitation frequency is about 16.55616~16.55617 MHz, and the frequency response of the three simple space vectors is the excitation point, which corresponds to b1 and b2 in Figure 8. , b3 resonance frequency. From the frequency response diagrams of Fig. 9 to Fig. 11 and Fig. 12 to Fig. 14, it is found that the two super-flat band frequency-admittance curves tend to be symmetrical with each other, thereby achieving dynamic balance.

IV.結論。IV. Conclusion.

在本發明中,針對以現今最熱門的題材石墨烯作假設性三維類石墨烯之頻溝效應分析,由六邊形單一晶胞作為模型,採用製程技術可行性較高的氧化鋅引入週期條件及布拉格定理探討頻溝效應。經由縝密的分析規劃,整理不同類石墨烯結構的頻散曲線及頻溝效應,可知其正六邊形頻溝效應顯著。In the present invention, for the analysis of the frequency channel effect of the hypothetical three-dimensional graphene using the most popular topical graphene, the hexagonal single unit cell is used as a model, and the process technology is more feasible. And the Prague theorem explores the frequency channel effect. Through careful analysis and planning, the dispersion curves and frequency channel effects of different graphene structures are sorted out, and the effect of the regular hexagonal frequency channel is significant.

以上所述,僅為本發明之一可行實施例,並非用以限定本發明之專利範圍,凡舉依據下列申請專利範圍所述之內容、特徵以及其精神而為之其他變化的等效實施,皆應包含於本發明之專利範圍內。本發明之方法及其機構,除上述優點外,並深具產業之利用性,可有效改善習用所產生之缺失,而且所具體界定於申請專利範圍之特徵,未見於同類物品,故而具實用性與進步性,已符合發明專利要件,爰依法具文提出申請,謹請 鈞局依法核予專利,以維護本申請人合法之權益。The above is only one of the possible embodiments of the present invention, and is not intended to limit the scope of the patents of the present invention, and the equivalents of other variations of the contents, the features and the spirit of the following claims. All should be included in the scope of the patent of the present invention. The method and the mechanism of the invention, in addition to the above advantages, are deeply utilized by the industry, can effectively improve the lack of use, and are specifically defined in the scope of the patent application, are not found in the same kind of articles, and therefore have practicality. And progress, has met the requirements of the invention patent, and filed an application according to law. I would like to ask the bureau to approve the patent in accordance with the law to protect the legitimate rights and interests of the applicant.

10,10a‧‧‧主圍體10,10a‧‧‧main body

11,11a,11b,11c,11d‧‧‧鏈結桿11,11a,11b,11c,11d‧‧‧links

12,12a,12b,12c‧‧‧鏈結圓12,12a,12b,12c‧‧‧chain circle

20‧‧‧鏤空部20‧‧‧镂空部

31‧‧‧第一平行線31‧‧‧ first parallel line

32‧‧‧第二平行線32‧‧‧second parallel line

33‧‧‧第三平行線33‧‧‧ third parallel line

34‧‧‧矩形34‧‧‧Rectangle

X‧‧‧橫向線X‧‧‧ horizontal line

Y‧‧‧縱向線Y‧‧‧ vertical line

Claims (6)

一種三維類石墨烯晶體元件,其係以氧化鋅壓電材料配合濺鍍沉積技術或氣膠噴鍍技術製成具有單晶胞缺陷的類石墨烯結構,該類石墨烯結構包含有複數個主圍體;該複數個主圍體呈一矩形陣列地分佈於一平面上;每一該主圍體相對該平面具有一特定厚度並沿著一正六邊形環繞,每一該主圍體包括有複數個鏈結桿及複數個鏈結圓,每一鏈結桿呈板片狀,每一鏈結圓呈圓柱形;該複數個鏈結桿依序位於該正六邊形的各邊,該正六邊形各邊分別位於一該鏈結桿的中軸線上;該複數個鏈結圓依序位於該正六邊形的各角點,該正六邊形各角點分別位於一該鏈結圓的圓心;該正六邊形上的每兩相鄰的鏈結桿一端密實地匯接於一該鏈結圓的周面;該複數個主圍體沿著一橫向線X呈多排且沿著一縱向線Y呈多列的正矩陣分佈,每一該主圍體與沿著該橫向線X而相鄰的至少一該主圍體共用一該鏈結桿,而且每一該主圍體二對邊的該鏈結桿相互平行;位在矩陣內圍區域的每一該主圍體有二對邊的該鏈結桿是與沿著該橫向線X而相鄰的二該主圍體分別共用一該鏈結桿;沿著該縱向線Y而相鄰的二該主圍體的至少一該鏈結圓以一該鏈結桿密實地連接;中心點位在同一橫向線X的連續五個該主圍體及中心點位在同一縱向線Y的連續三個該主圍體形成一主陣列,該主陣列中央具一鏤空部,該鏤空部使該主陣列的中央五個該主圍體相通,而形成主陣列中央具有單一缺陷之三維類石墨烯晶體結構,其中,該鏤空部除去了位在該主陣列中央之一該主圍體中心點位在一第一平行線上的二個該鏈結圓全部、中心點位在一第二平行線上的二個該鏈結圓一半、中心點位在一第三平行線上的二個該鏈結圓一半、該主圍體上連接相鄰且分別位在該第一平行線與該第二平行線上之二該鏈結圓的該鏈結桿全部、該主圍體上連接相鄰且分別位在該第一平行線與該第三平行線上之二該鏈結圓的該鏈結桿全部、該主圍體上連接相鄰且同位在該第二平行線上之二該鏈結圓的該鏈結桿一半及該主圍體上連接相鄰且同位在該第三平行線上之二該鏈結圓的該鏈結桿一半,該第一平行線、該第二平行線、該第三平行線及該縱向線Y相互平行。 A three-dimensional graphene crystal element is a graphene-like structure having a single crystal cell defect formed by a zinc oxide piezoelectric material combined with a sputtering deposition technique or a gas gel deposition technique, and the graphene structure includes a plurality of main structures. a plurality of main enclosures distributed in a rectangular array on a plane; each of the main enclosures having a specific thickness relative to the plane and surrounding a regular hexagon, each of the main enclosures including a plurality of link rods and a plurality of chain loops, each of the link rods being in the form of a plate, each of which has a cylindrical shape; the plurality of link rods are sequentially located on each side of the regular hexagon, the positive six The sides of the edge are respectively located on a central axis of the link rod; the plurality of link circles are sequentially located at each corner point of the regular hexagon, and the corner points of the regular hexagon are respectively located at a center of the link circle; One end of each two adjacent connecting rods on the regular hexagon is densely connected to a circumferential surface of the chain circle; the plurality of main surrounding bodies are arranged in a plurality of rows along a transverse line X along a longitudinal line Y is a positive matrix distribution of a plurality of columns, each of the main enclosures being adjacent to the transverse line X One of the main enclosures shares one of the link bars, and the link bars of the two opposite sides of each of the main enclosures are parallel to each other; each of the main enclosures located in the inner circumference of the matrix has two opposite sides The link bar is shared by the two main body adjacent to the transverse line X, and the link bar is adjacent to the longitudinal line Y; at least one of the link circles of the adjacent main body along the longitudinal line Y Connected by a chain link; a continuous array of five main main bodies at the same lateral line X and three consecutive main bodies of the center line at the same longitudinal line Y form a main array, the main The central portion of the array has a hollow portion, the hollow portion communicates with the central five surrounding main body of the main array, and forms a three-dimensional graphene crystal structure having a single defect in the center of the main array, wherein the hollow portion is removed One of the center of the main array, the center of the main body, is located on a first parallel line, and the two points of the chain are all on one second parallel line. Two of the links on the third parallel line are half rounded, the main body is connected adjacently and are respectively located in the a parallel line and two of the second parallel lines of the link circle of the chain, all adjacent to the main body and respectively located on the first parallel line and the third parallel line All of the spliced rods of the circle, the half of the link rod adjacent to the main circumference and adjacent to the second parallel line, and the connecting rod half of the chain circle and the main body are adjacent and co-located in the first Two of the three parallel lines are half of the link rod of the chain, and the first parallel line, the second parallel line, the third parallel line, and the longitudinal line Y are parallel to each other. 如請求項1所述之三維類石墨烯晶體元件,其中,鄰接該鏤空部的 該主圍體上用來連接位在該第一平行線上之該鏈結圓的該鏈結桿被去除一半段。Request item 1 . The three-dimensional graphene-like crystal element according to claim 1, wherein the link rod of the main surrounding body adjacent to the hollow portion for connecting the chain circle located on the first parallel line is removed by half. 如請求項2所述之三維類石墨烯晶體元件,其中,被去除一半段之該鏈結桿的末端面為一平面,該平面與該鏈結桿的中軸線相互垂直。 The three-dimensional graphene-like crystal element according to claim 2, wherein the end face of the link rod removed by half is a plane which is perpendicular to the central axis of the link rod. 如請求項1至3任一項所述之三維類石墨烯晶體元件,其中,該鏤空部係沿著一矩形去除。 The three-dimensional graphene crystal element according to any one of claims 1 to 3, wherein the hollow portion is removed along a rectangle. 如請求項1至3任一項所述之三維類石墨烯晶體元件,其中,該鏈結桿寬度為0.02mm,該鏈結圓之直徑均為0.14mm,該正六邊形之邊長長度為0.2mm。 The three-dimensional graphene crystal element according to any one of claims 1 to 3, wherein the link rod has a width of 0.02 mm, the diameter of the link circle is 0.14 mm, and the length of the side of the regular hexagon is 0.2mm. 如請求項1所述之三維類石墨烯晶體元件,其中,該主圍體的厚度、該鏈結桿的厚度及該鏈結圓的圓柱高度分別為0.01mm。 The three-dimensional graphene crystal element according to claim 1, wherein the thickness of the main body, the thickness of the link rod, and the column height of the chain circle are respectively 0.01 mm.
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