TWI499002B - Packaging device and method for fabricating the same - Google Patents

Packaging device and method for fabricating the same Download PDF

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Publication number
TWI499002B
TWI499002B TW102129621A TW102129621A TWI499002B TW I499002 B TWI499002 B TW I499002B TW 102129621 A TW102129621 A TW 102129621A TW 102129621 A TW102129621 A TW 102129621A TW I499002 B TWI499002 B TW I499002B
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TW
Taiwan
Prior art keywords
substrate
package
vias
conductive
interposer
Prior art date
Application number
TW102129621A
Other languages
Chinese (zh)
Other versions
TW201413872A (en
Inventor
Shih Wei Liang
Kai Chiang Wu
Ming Che Ho
yi wen Wu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
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Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW201413872A publication Critical patent/TW201413872A/en
Application granted granted Critical
Publication of TWI499002B publication Critical patent/TWI499002B/en

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Description

封裝元件與其製法Package component and its method

本發明係有關於一種半導體元件，且特別是有關於一種封裝元件與其製法。The present invention relates to a semiconductor component, and more particularly to a package component and a method of fabricating the same.

半導體元件應用於各種電子產品，例如個人電腦、手機、數位相機以及其他電子設備。半導體元件的製造通常藉由在一半導體基板上連續地沉積絕緣材料或介電材料層、導電材料層以及半導體材料層，接著利用微影製程對上述各個材料層進行圖案化，藉以形成電路元件或組件。Semiconductor components are used in a variety of electronic products, such as personal computers, cell phones, digital cameras, and other electronic devices. The semiconductor device is generally fabricated by continuously depositing an insulating material or a dielectric material layer, a conductive material layer, and a semiconductor material layer on a semiconductor substrate, and then patterning the respective material layers by a lithography process to form circuit components or Component.

藉由持續降低最小特徵尺寸(minimum feature size)，半導體工業持續改善各種電子組件(例如電晶體、二極體、電阻、電容等等)的集積密度(integration density)，如此一來可使更多元件整合於一特定區域中。在一些應用中，這些尺寸較小的電子組件也僅需要使用較小型封裝即可，其中這些較小型封裝所需使用的區域較傳統的封裝更小。By continuously reducing the minimum feature size, the semiconductor industry continues to improve the integration density of various electronic components (such as transistors, diodes, resistors, capacitors, etc.), thus enabling more The components are integrated into a specific area. In some applications, these smaller electronic components need only use a smaller package, which requires a smaller area than a conventional package.

就半導體元件的應用而言，近來所發展的一種較小型封裝技術為封裝層疊(package on package,PoP)，在一個單一封裝層疊(package on package)元件中，兩個或多個積體電路晶粒分別進行封裝，再將已完成封裝的積體電路晶粒接合在一 起。In the case of semiconductor device applications, a recent development of a smaller package technology is package on package (PoP), in a single package on package component, two or more integrated circuit crystals The pellets are separately packaged, and the integrated circuit die of the completed package is bonded to Start.

本發明提供一種封裝元件之製法，包括以下步驟：形成複數個基板通孔(through-substrate vias,TSVs)於一中介層基板之中；凹蝕(recessing)該中介層基板或增加該些基板通孔之厚度，藉以暴露出該些複數個基板通孔的部份；以及耦合一導電球到每一個該些基板通孔的該暴露部份。The invention provides a method for fabricating a package component, comprising the steps of: forming a plurality of through-substrate vias (TSVs) in an interposer substrate; recessing the interposer substrate or adding the substrate vias a thickness of the hole to expose portions of the plurality of substrate vias; and coupling a conductive ball to the exposed portion of each of the substrate vias.

本發明另提供一種封裝元件，包括：一中介層基板；複數個基板通孔配置於該中介層基板中，其中該中介層基板凹蝕至低於該些基板通孔的頂部表面；以及一導電球耦合到每一個該些基板通孔。The present invention further provides a package component, comprising: an interposer substrate; a plurality of substrate vias disposed in the interposer substrate, wherein the interposer substrate is etched to a lower surface than the top surface of the substrate vias; and a conductive A ball is coupled to each of the substrate vias.

本發明亦提供一種封裝元件之製法，包括以下步驟：提供一封裝基板，其中該封裝基板包括一中介層基板及複數個基板通孔配置於該中介層基板中；凹蝕該中介層基板或增加該些基板通孔之厚度，以暴露出該些基板通孔的部份；形成一晶種層於該些基板通孔的該些暴露部份之上；以及耦合一焊料球到位於每一個該些基板通孔的該暴露部份之上的該晶種層。The invention also provides a method for manufacturing a package component, comprising the steps of: providing a package substrate, wherein the package substrate comprises an interposer substrate and a plurality of substrate vias disposed in the interposer substrate; etching the interposer substrate or adding The substrate vias are exposed to expose portions of the substrate vias; a seed layer is formed over the exposed portions of the substrate vias; and a solder ball is coupled to each of the pads The seed layer above the exposed portion of the substrate via.

100‧‧‧封裝元件100‧‧‧Package components

102‧‧‧中介層基板102‧‧‧Interposer substrate

104‧‧‧基板通孔(TSV)104‧‧‧Substrate Through Hole (TSV)

106‧‧‧中介層基板之第一側106‧‧‧The first side of the interposer substrate

108‧‧‧中介層基板之第二側108‧‧‧Second side of the interposer substrate

110‧‧‧重新分配層(RDL)110‧‧‧Reassignment Layer (RDL)

112‧‧‧線路112‧‧‧ lines

114‧‧‧絕緣材料114‧‧‧Insulation materials

116‧‧‧第一導電材料116‧‧‧First conductive material

118‧‧‧第二導電材料118‧‧‧Second conductive material

120‧‧‧接觸插塞120‧‧‧Contact plug

122‧‧‧暴露部份122‧‧‧Exposed parts

123‧‧‧基板通孔之頂部表面123‧‧‧Top surface of the substrate through hole

d1 ‧‧‧暴露部份向上突出延伸之尺寸(厚度)d 1 ‧‧‧ Dimensions (thickness) of the exposed part protruding upward

126‧‧‧晶種層之第一層126‧‧‧The first layer of the seed layer

128‧‧‧晶種層之第二層128‧‧‧Second layer of seed layer

130‧‧‧晶種層130‧‧‧ seed layer

140‧‧‧導電球140‧‧‧Electrical ball

150‧‧‧模版材料150‧‧‧Template material

152‧‧‧導電膠152‧‧‧ conductive adhesive

d2 ‧‧‧模版材料與導電膠之尺寸(厚度)d 2 ‧ ‧ Dimensions (thickness) of stencil materials and conductive paste

130’‧‧‧晶種層130’‧‧‧ seed layer

160‧‧‧封裝元件之製造方法流程圖160‧‧‧Processing method of packaging components

162‧‧‧形成複數個基板通孔(TSVs)於中介層基板之中162‧‧‧ Forming a plurality of substrate vias (TSVs) in the interposer substrate

164‧‧‧凹蝕中介層基板以暴露出基板通孔(TSVs)的部份164‧‧‧A recessed interposer substrate to expose portions of substrate vias (TSVs)

166‧‧‧耦合焊料到基板通孔(TSVs)的暴露部份166‧‧‧coupled solder to exposed portions of substrate vias (TSVs)

170‧‧‧導電凸塊170‧‧‧Electrical bumps

172‧‧‧積體電路晶粒172‧‧‧Integrated circuit die

172a‧‧‧積體電路172a‧‧‧ integrated circuit

172b‧‧‧積體電路晶粒172b‧‧‧Integrated circuit die

172c‧‧‧積體電路晶粒172c‧‧‧Integrated circuit die

174‧‧‧接觸插塞174‧‧‧Contact plug

176‧‧‧封裝半導體元件176‧‧‧Package semiconductor components

178‧‧‧封裝半導體元件178‧‧‧Package semiconductor components

180‧‧‧接觸插塞180‧‧‧Contact plug

182‧‧‧封裝182‧‧‧Package

184‧‧‧焊料接點184‧‧‧ solder joints

186‧‧‧模造成型化合物186‧‧·Molding compounds

188‧‧‧基板通孔188‧‧‧substrate through hole

192a‧‧‧第一重新分配層192a‧‧‧First redistribution layer

192b‧‧‧第二重新分配層192b‧‧‧Second redistribution layer

194a‧‧‧線路接合194a‧‧‧Line bonding

194b‧‧‧線路接合194b‧‧‧Line bonding

196‧‧‧模造成型化合物196‧‧·Molding compounds

198‧‧‧封裝體層疊(package-on-package,PoP)元件198‧‧‧Package-on-package (PoP) components

第1~6圖顯示封裝元件在不同製程階段的剖面圖，用以說明製造封裝元件的方法。Figures 1 through 6 show cross-sectional views of package components at different stages of the process to illustrate the method of making packaged components.

第7圖顯示封裝元件100之剖面圖，用以說明封裝元件之製造方法。Figure 7 shows a cross-sectional view of package component 100 to illustrate the method of fabricating the package component.

第8~10圖顯示封裝元件在不同製程階段的剖面圖，用以說明製造封裝元件的方法。Figures 8-10 show cross-sectional views of package components at various stages of the process to illustrate the method of making package components.

第11圖顯示流程圖，用以說明封裝元件的製造方法。Figure 11 shows a flow chart for explaining the method of manufacturing the package component.

第12~13圖顯示剖面圖，用以說明接合積體電路晶至封裝元件的方法。Figures 12 through 13 show cross-sectional views illustrating the method of bonding the integrated circuit crystals to the package components.

第14~15圖顯示剖面圖，用以說明利用本發明封裝元件製造封裝體層疊(package-on-package,PoP)元件的方法。Figures 14 to 15 show cross-sectional views for explaining a method of manufacturing a package-on-package (PoP) device using the packaged component of the present invention.

本發明所揭露之實施例係有關於應用於半導體元件的封裝元件與方法。本發明將描述新穎的封裝方法、封裝元件以及接合焊料球至封裝基板的方法。Embodiments of the present invention are related to packaged components and methods applied to semiconductor components. The present invention will describe novel packaging methods, package components, and methods of bonding solder balls to package substrates.

依據本發明之部份實施例，第1圖到第6圖為封裝元件100在不同製程階段的剖面圖，用以說明製造封裝元件100的方法。In accordance with some embodiments of the present invention, FIGS. 1 through 6 are cross-sectional views of package component 100 at various stages of processing for illustrating a method of fabricating package component 100.

封裝元件100的製造方法包括，首先提供中介層基板(interposer substrate)102。需注意的是，在每一圖中僅包括一個封裝元件100，然而，複數個封裝元件100同時形成於一個中介層基板102的表面上，在之後的製程中，封裝元件100將個別被分割而分離。The method of fabricating the package component 100 includes first providing an interposer substrate 102. It should be noted that only one package component 100 is included in each figure. However, a plurality of package components 100 are simultaneously formed on the surface of one interposer substrate 102. In the subsequent process, the package components 100 are individually divided. Separation.

如第1圖所示，中介層基板102包括複數個基板通孔(through-substrate vias,TSVs)104形成於其中。基板通孔104具有導電性，並且提供自中介層基板102之第一側106到中介層基板102之第二側108的電性連接，其中第二側108與第一側106分別位於中介層基板102相對的兩側。基板通孔104提供封裝元 件100垂直的連接。舉例而言，中介層基板102可包括矽或其他半導體材料。此外，中介層基板102亦可包括其他材料。As shown in FIG. 1, the interposer substrate 102 includes a plurality of through-substrate vias (TSVs) 104 formed therein. The substrate via 104 is electrically conductive and provides electrical connection from the first side 106 of the interposer substrate 102 to the second side 108 of the interposer substrate 102, wherein the second side 108 and the first side 106 are respectively located on the interposer substrate 102 opposite sides. The substrate via 104 provides a package element Piece 100 vertical connection. For example, the interposer substrate 102 can include germanium or other semiconductor materials. In addition, the interposer substrate 102 may also include other materials.

可藉由圖案化或鑽出複數個完全穿過中介層基板102的孔洞或縫隙，再填充導電材料於這些孔洞中，以形成基板通孔104。舉例而言，在本發明之部份實施例中，在中介層基板102的一側上形成未完全穿過基板的孔洞，填充導電材料於這些孔洞中，對中介層基板102的另一側進行薄化至到達基板通孔104為止，藉以使基板通孔104延伸而完全穿過中介層基板102。此外，亦可利用其他方法形成基板通孔104於中介層基板102中。The substrate vias 104 may be formed by patterning or drilling a plurality of holes or slits completely through the interposer substrate 102 and filling the holes in the holes. For example, in some embodiments of the present invention, holes that do not completely pass through the substrate are formed on one side of the interposer substrate 102, and conductive materials are filled in the holes to perform the other side of the interposer substrate 102. The thinning reaches the substrate via 104, thereby extending the substrate via 104 and completely passing through the interposer substrate 102. In addition, the substrate via 104 may be formed in the interposer substrate 102 by other methods.

在本發明之部份實施例中，基板通孔104可包括一種或多種的襯層(liner)以及一填充材料(fill material)(未顯示於圖中)。舉例而言，基板通孔104可包括一種或多種的襯層，其中這些襯層可包括鉭(Ta)、氮化鉭(TaN)、鈦(Ti)、氮化鈦(TiN)、其他材料或上述材料之組合或多層結構。在本發明之部份實施例中，襯層可包括鉭/氮化鉭(Ta/TaN)或鈦/氮化鈦(Ti/TiN)的雙層結構。舉例而言，基板通孔104可包括填充材料沉積於襯層之上，其中填充材料可包括銅(Cu)。此外，基板通孔104可包括其他材料且可不包含襯層。舉例而言，在本發明之部份實施例中，襯層包括絕緣材料，此絕緣材料形成於將用於形成基板通孔104之孔洞的側壁上，其中絕緣材料的形成早於襯層與填充材料的沉積或形成。在其他實施例中，絕緣襯層並未包含於中介層基板102之中。舉例而言，從中介層基板102的俯視圖觀之，基板通孔104包括一直徑介於約10-20μm，此 外，基板通孔104可包括其他尺寸。In some embodiments of the invention, the substrate vias 104 may include one or more liners and a fill material (not shown). For example, the substrate vias 104 may include one or more liners, wherein the liners may include tantalum (Ta), tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), other materials, or A combination or multilayer structure of the above materials. In some embodiments of the invention, the liner may comprise a two-layer structure of tantalum/tantalum nitride (Ta/TaN) or titanium/titanium nitride (Ti/TiN). For example, the substrate vias 104 can include a fill material deposited over the liner, wherein the fill material can include copper (Cu). Further, the substrate vias 104 may include other materials and may not include a liner. For example, in some embodiments of the invention, the liner layer comprises an insulating material formed on the sidewalls of the holes that will be used to form the substrate vias 104, wherein the formation of the insulating material precedes the liner and fill Deposition or formation of materials. In other embodiments, the insulating liner is not included in the interposer substrate 102. For example, from the top view of the interposer substrate 102, the substrate via 104 includes a diameter of about 10-20 μm. Additionally, the substrate vias 104 can include other dimensions.

如第2圖所示，形成重新分配層(redistribution layer,RDL)110於中介層基板102之第二側108上。重新分配層110包括線路(wiring)112配置於絕緣材料114之中。舉例而言，線路112包括複數個由導電材料所形成的圖案(trace)，其中導電材料包括銅、鋁(Al)、其他材料或上述材料之組合或多層結構。舉例而言，絕緣材料114包括二氧化矽(silicon dioxide)、氮化矽(silicon nitride)、其他絕緣材料或上述材料之組合或多層結構。此外，線路112與絕緣材料114可包括其他材料。至少部份的線路112耦合到基板通孔104，以提供封裝元件100之第二側108電性連接。舉例而言，在本發明之部份實施例中，為提供封裝元件100電性連接，部份的線路112可包括線路之扇骨狀展開區域(fan-out region)。As shown in FIG. 2, a redistribution layer (RDL) 110 is formed on the second side 108 of the interposer substrate 102. The redistribution layer 110 includes a wiring 112 disposed in the insulating material 114. For example, the line 112 includes a plurality of traces formed of a conductive material including copper, aluminum (Al), other materials, or a combination or multilayer structure of the above materials. For example, the insulating material 114 includes silicon dioxide, silicon nitride, other insulating materials, or a combination or multilayer structure of the above materials. Additionally, line 112 and insulating material 114 may comprise other materials. At least a portion of the line 112 is coupled to the substrate via 104 to provide electrical connection of the second side 108 of the package component 100. For example, in some embodiments of the present invention, to provide electrical connection of the package component 100, a portion of the line 112 may include a fan-out region of the line.

重新分配層110包括複數個接觸插塞(contact)120形成於其表面上。接觸插塞120包括第一導電材料116以及第二導電材料118配置於第一導電材料116之上。在本發明之部份實施例中，第一導電材料116包括銅且第二導電材料118包括錫(Sn)。此外，接觸插塞120、第一導電材料116與第二導電材料118可包括其他材料。在部份實施例中並未包括第二導電材料118。至少部份的接觸插塞120藉由絕緣材料114耦合到重新分配層110之線路112。重新分配層110提供封裝元件100水平方向之連接。The redistribution layer 110 includes a plurality of contact plugs 120 formed on a surface thereof. The contact plug 120 includes a first conductive material 116 and a second conductive material 118 disposed over the first conductive material 116. In some embodiments of the invention, the first electrically conductive material 116 comprises copper and the second electrically conductive material 118 comprises tin (Sn). Additionally, the contact plug 120, the first electrically conductive material 116, and the second electrically conductive material 118 can comprise other materials. The second conductive material 118 is not included in some embodiments. At least a portion of the contact plugs 120 are coupled to the line 112 of the redistribution layer 110 by an insulating material 114. The redistribution layer 110 provides a horizontal connection of the package component 100.

舉例而言，重新分配層110的不同部份，亦即，重新分配層110之線路112、絕緣材料114以及接觸插塞120可使用 蝕刻技術(etch techniques)、鑲嵌技術(damascene techniques)及/或其他方法形成。For example, different portions of the redistribution layer 110, that is, the line 112 of the redistribution layer 110, the insulating material 114, and the contact plug 120 can be used. Etch techniques, damascene techniques, and/or other methods are formed.

依據本發明所揭露之部份實施例，如第3圖所示，凹蝕(recessed)中介層基板102，以暴露出複數個基板通孔104的部份122。基板通孔104的部份122在此亦稱為，例如，頂部部份122與暴露部份122。舉例而言，翻轉中介層基板102以使第一側106面向上方，利用蝕刻製程移除中介層基板102之頂部表面的一部份，且暴露出基板通孔104的頂部部份122。在本發明之其他實施例中，利用化學機械研磨(chemical-mechanical polish,CMP)製程移除中介層基板102之頂部表面的一部份，且暴露出基板通孔104的頂部部份122。舉例而言，亦可利用蝕刻製程與化學機械研磨製程結合的方法，凹蝕中介層基板102，以暴露出複數個基板通孔104的頂部部份122。In accordance with some embodiments of the present invention, as shown in FIG. 3, the interposer substrate 102 is recessed to expose portions 122 of the plurality of substrate vias 104. Portion 122 of substrate via 104 is also referred to herein as, for example, top portion 122 and exposed portion 122. For example, the interposer substrate 102 is flipped so that the first side 106 faces upward, and a portion of the top surface of the interposer substrate 102 is removed by an etching process, and the top portion 122 of the substrate via 104 is exposed. In other embodiments of the invention, a portion of the top surface of the interposer substrate 102 is removed using a chemical-mechanical polish (CMP) process and the top portion 122 of the substrate via 104 is exposed. For example, the interposer substrate 102 may be etched to expose the top portion 122 of the plurality of substrate vias 104 by a combination of an etching process and a CMP process.

在本發明之其他實施例中，可藉由增加基板通孔104的厚度，以使中介層基板102之頂部表面被凹蝕至低於基板通孔104之頂部表面。舉例而言，可利用電鍍(plating)製程增加基板通孔104的厚度。如第3圖之虛線部份所示，起初基板通孔104之頂部表面123大致上與中介層基板102之頂部表面共平面。電鍍導電材料(例如銅)於起初共平面之頂部表面123上以形成基板通孔104之頂部部份122，其中頂部部份122自中介層基板102之頂部表面向上方延伸。在電鍍製程中，導電材料僅電鍍於導電性的基板通孔104之上，並未電鍍於中介層基板102之頂部表面上。在本發明之其他實施例中，可利用沉積(deposition)製程增加基板通孔104的厚度。舉例而言，可沉積額外的導電 材料於中介層基板102的第一側106之上，接著可利用微影製程(lithography)或直接圖案化(direct patterning)製程對該導電材料進行圖案化，藉以自中介層基板102的第一側106之上移除該導電材料，遺留下導電材料於基板通孔104之上，增加基板通孔104的厚度，因而使基板通孔104的暴露部份122自中介層基板102之頂部表面向上方延伸。亦可利用沉積製程與電鍍製程結合的方法，使基板通孔104之頂部部份122暴露於中介層基板102的第一側106之上。此外，亦可利用其他方法增加基板通孔104的厚度。In other embodiments of the present invention, the top surface of the interposer substrate 102 may be recessed to a lower surface than the top surface of the substrate via 104 by increasing the thickness of the substrate via 104. For example, the thickness of the substrate via 104 can be increased using a plating process. As shown by the dashed portion of FIG. 3, initially the top surface 123 of the substrate via 104 is substantially coplanar with the top surface of the interposer substrate 102. A conductive material (e.g., copper) is electroplated on the top surface 123 of the initial coplanar surface to form a top portion 122 of the substrate via 104, wherein the top portion 122 extends upward from the top surface of the interposer substrate 102. In the electroplating process, the conductive material is only plated on the conductive substrate vias 104 and is not plated on the top surface of the interposer substrate 102. In other embodiments of the invention, the thickness of the substrate vias 104 may be increased using a deposition process. For example, additional conductive can be deposited The material is over the first side 106 of the interposer substrate 102, and then the conductive material can be patterned using a lithography or direct patterning process, whereby the first side of the interposer substrate 102 is patterned. The conductive material is removed over the 106, leaving a conductive material over the substrate via 104, increasing the thickness of the substrate via 104, thereby causing the exposed portion 122 of the substrate via 104 to be upward from the top surface of the interposer substrate 102. extend. The top portion 122 of the substrate via 104 may also be exposed over the first side 106 of the interposer substrate 102 by a combination of a deposition process and an electroplating process. In addition, other methods may be used to increase the thickness of the substrate via 104.

舉例而言，在本發明之部份實施例中，可利用本發明所描述之一種或多種方法，增加基板通孔104的厚度，並且使中介層基板102凹蝕，藉以暴露出基板通孔104的頂部部份122。For example, in some embodiments of the present invention, the thickness of the substrate via 104 may be increased by one or more methods described in the present invention, and the interposer substrate 102 may be etched to expose the substrate via 104. The top portion 122.

在使中介層基板102凹蝕及/或增加複數個基板通孔104的厚度之後，基板通孔104的暴露部份122自中介層基板102之頂部表面向上方延伸達到一尺寸d1 ，舉例而言，其中該尺寸d1 包括介於約10-20μm。舉例而言，在本發明之部份實施例中，尺寸d1 包括約30μm或更小。此外，尺寸d1 可包括其他數值，其數值取決於各種因子，例如特定的應用領域、導電球140(未顯示於第3圖中；請參照第5圖)所需的尺寸、或所需的平衡高度(stand-off hight)(例如，在一終端應用中，距離導電球140最終貼合之表面的高度)，以及其他因子。在本發明之部份實施例中，基板通孔104包括暴露基板通孔(exposed TSVs,eTSVs)，暴露基板通孔(eTSVs)具有突出於中介層基板102之頂 部表面達到尺寸d1 的端點，其中尺寸d1 包括介於約10-20μm。After the interposer substrate 102 is etched and/or the thickness of the plurality of substrate vias 104 is increased, the exposed portion 122 of the substrate via 104 extends upward from the top surface of the interposer substrate 102 to a size d 1 , for example. That is, wherein the dimension d 1 is comprised between about 10-20 μm. For example, in some embodiments of the invention, dimension d 1 includes about 30 μm or less. In addition, the dimension d 1 may include other values depending on various factors, such as a specific field of application, the conductive ball 140 (not shown in FIG. 3; please refer to FIG. 5), the required size, or the required Stand-off hight (e.g., the height of the surface from which the conductive ball 140 ultimately fits in a terminal application), among other factors. In some embodiments of the present invention, the substrate vias 104 include exposed substrate vias (eTSVs) having exposed terminals that protrude from the top surface of the interposer substrate 102 to a size d 1 . Where size d 1 is comprised between about 10-20 μm.

如第4圖所示，接著形成一晶種層(seed layer)130於基板通孔104的暴露部份122與中介層基板102的第一側106之上。需注意的是，當晶種層130形成於基板通孔104的暴露部份122上之後，基板通孔104將不再「暴露」；換言之，基板通孔104受到晶種層130的覆蓋。然而，為使在此所討論的內容前後一致，基板通孔104的暴露部份122在接下來的文章裡依然被稱為「暴露部份122」，因為這些部份早在先前的製程步驟中已被暴露出來。As shown in FIG. 4, a seed layer 130 is then formed over the exposed portion 122 of the substrate via 104 and the first side 106 of the interposer substrate 102. It should be noted that after the seed layer 130 is formed on the exposed portion 122 of the substrate via 104, the substrate via 104 will no longer be "exposed"; in other words, the substrate via 104 is covered by the seed layer 130. However, in order to align the content discussed herein, the exposed portion 122 of the substrate via 104 is still referred to as the "exposed portion 122" in the following article because these portions were previously in the previous process steps. Has been exposed.

在本發明之部份實施例中，如第4圖所示，晶種層130包括兩層：第一層126以及第二層128配置於第一層126之上。舉例而言，在本發明之部份實施例中，第一層126包括1,000-3,000Å的鈦(Ti)，且第二層128包括5,000-10,000Å的銅(Cu)。此外，晶種層130的第一層126以及第二層128亦可包括其他材料與尺寸。舉例而言，晶種層130亦可包括單一材料層或三層或三層以上的材料層。在本發明之部份實施例中，可利用濺鍍(sputter)製程形成晶種層130的一層或多層126或128。亦可利用其他方法形成晶種層130。舉例而言，在本發明之部份實施例中，晶種層130大致上為順應性(conformal)地覆蓋於中介層基板102之上，並且與基板通孔104之暴露部份122的表面形狀保持一致。此外，晶種層130亦可以是非順應性(non-conformal)，並未顯示於圖中。需注意的是，為了簡化圖式，在本發明接下來的圖式中，晶種層130僅以單一層狀構造表示。In some embodiments of the present invention, as shown in FIG. 4, the seed layer 130 includes two layers: a first layer 126 and a second layer 128 disposed on the first layer 126. For example, in some embodiments of the invention, the first layer 126 includes 1,000-3,000 Å of titanium (Ti) and the second layer 128 includes 5,000-10,000 Å of copper (Cu). Additionally, the first layer 126 and the second layer 128 of the seed layer 130 may also include other materials and dimensions. For example, the seed layer 130 may also include a single material layer or three or more layers of material. In some embodiments of the invention, one or more layers 126 or 128 of seed layer 130 may be formed using a sputtering process. The seed layer 130 can also be formed by other methods. For example, in some embodiments of the present invention, the seed layer 130 is substantially conformally overlying the interposer substrate 102 and has a surface shape with the exposed portion 122 of the substrate via 104. be consistent. In addition, the seed layer 130 may also be non-conformal and is not shown in the figures. It should be noted that in order to simplify the drawing, in the following figures of the present invention, the seed layer 130 is represented only in a single layered configuration.

如第5圖所示，複數個導電球140形成於位於基板通孔104之暴露部份122上方的晶種層130之上。舉例而言，可利用球滴製程(ball drop process)使導電球140耦合到位於基板通孔104之暴露部份122上方的晶種層130。舉例而言，可利用直接球滴製程(direct ball drop process)，此外，亦可利用其他方法使導電球140耦合到位於基板通孔104之暴露部份122上方的晶種層130。舉例而言，在本發明之部份實施例中，導電球140包括共熔(eutectic)材料，例如焊料。在本發明中，例如在部份專利範圍中，導電球140亦稱為焊料球(solder ball)。此外，導電球140亦可包括其他材料、其他共熔材料或上述材料之多層結構或其組合。接著，提升溫度至共熔材料的共熔點，使導電球140的共熔材料迴流，藉以使導電球140接合到位於基板通孔104之暴露部份122上方的晶種層130。舉例而言，在本發明之部份實施例中，舉例而言，在本發明之部份實施例中，其中導電球140包括焊料(solder)，導電球140的焊料材料之溫度提升至一波峰溫度為約260℃。此外，迴流製程亦可包括其他溫度。As shown in FIG. 5, a plurality of conductive balls 140 are formed over the seed layer 130 above the exposed portion 122 of the substrate via 104. For example, the conductive ball 140 can be coupled to the seed layer 130 over the exposed portion 122 of the substrate via 104 using a ball drop process. For example, a direct ball drop process can be utilized. In addition, conductive balls 140 can be coupled to the seed layer 130 above the exposed portions 122 of the substrate vias 104 by other methods. For example, in some embodiments of the invention, conductive ball 140 includes a eutectic material, such as solder. In the present invention, for example, in part of the patent, the conductive ball 140 is also referred to as a solder ball. In addition, the conductive balls 140 may also include other materials, other eutectic materials, or multilayer structures of the above materials, or a combination thereof. Next, the temperature is raised to the eutectic point of the eutectic material to reflow the eutectic material of the conductive ball 140, thereby bonding the conductive ball 140 to the seed layer 130 above the exposed portion 122 of the substrate via 104. For example, in some embodiments of the present invention, for example, in some embodiments of the present invention, wherein the conductive ball 140 includes a solder, the temperature of the solder material of the conductive ball 140 is raised to a peak. The temperature is about 260 °C. In addition, the reflow process can also include other temperatures.

如第6圖所示，在導電球140耦合到位於基板通孔104之暴露部份122上方的晶種層130之後，從中介層基板102之頂部表面上移除晶種層130。在本發明之部份實施例中，此方法的優點在於，導電球140可作為移除晶種層130時所使用的蝕刻罩幕(etch mask)，因此不需藉由微影製程(lithography process)移除晶種層130。舉例而言，在本發明之部份實施例中，可利用蝕刻製程，在蝕刻製程中使用導電球140作為蝕刻 罩幕，蝕刻晶種層130。As shown in FIG. 6, after the conductive ball 140 is coupled to the seed layer 130 over the exposed portion 122 of the substrate via 104, the seed layer 130 is removed from the top surface of the interposer substrate 102. In some embodiments of the present invention, the method has the advantage that the conductive ball 140 can be used as an etch mask for removing the seed layer 130, and thus does not need to be processed by a lithography process. The seed layer 130 is removed. For example, in some embodiments of the present invention, an etching process may be utilized in which conductive balls 140 are used as an etch in the etching process. The mask is etched to the seed layer 130.

在如第1圖到第6圖所示之實施例中，利用球滴製程使導電球140耦合到中介層基板102。依據本發明之其他實施例，利用導電膠(conductive paste)152形成導電球140，如第7圖所示，且如第9圖所示。In the embodiment as shown in FIGS. 1 through 6, the conductive ball 140 is coupled to the interposer substrate 102 by a ball drop process. In accordance with other embodiments of the present invention, conductive balls 140 are formed using conductive paste 152, as shown in FIG. 7, and as shown in FIG.

依據本發明之其他實施例，第7圖為封裝元件100之剖面圖，其顯示封裝元件100之製造方法。形成如第4圖所示的晶種層130之後，導電膠152配置於模版材料(stencil material)150之間，並且形成於晶種層130之上，如第7圖所示。舉例而言，在本發明之部份實施例中，導電膠152包括焊料膠(solder paste)。在本發明之部份實施例中，模版材料150包括高分子、鋼、鋁合金、鎂合金或上述材料之組合或多層結構。此外，模版材料150與導電膠152亦可包括其他材料。在本發明之部份實施例中，模版材料150與導電膠152包括一尺寸d2 ，其中該尺寸d2 包括介於約60-100μm。此外，模版材料150與導電膠152之尺寸d2 亦可包括其他材料或尺寸。舉例而言，模版材料150包括犧牲材料(sacrificial material)，且模版材料150適合用於控制導電膠152的形狀與圖案。In accordance with other embodiments of the present invention, FIG. 7 is a cross-sectional view of package component 100 showing a method of fabricating package component 100. After forming the seed layer 130 as shown in FIG. 4, the conductive paste 152 is disposed between the stencil material 150 and formed over the seed layer 130 as shown in FIG. For example, in some embodiments of the invention, the conductive paste 152 includes a solder paste. In some embodiments of the invention, the stencil material 150 comprises a polymer, steel, aluminum alloy, magnesium alloy, or a combination or multilayer structure of the above materials. In addition, the stencil material 150 and the conductive paste 152 may also include other materials. In some embodiments of the invention, the stencil material 150 and the conductive paste 152 comprise a dimension d 2 , wherein the dimension d 2 comprises between about 60 and 100 μm. In addition, the dimension d 2 of the stencil material 150 and the conductive paste 152 may also include other materials or sizes. For example, the stencil material 150 includes a sacrificial material, and the stencil material 150 is suitable for controlling the shape and pattern of the conductive paste 152.

移除模版材料150，導電膠152接著進行迴流製程，以使導電膠152的共熔材料迴流並且形成導電球140位於基板通孔104的暴露部份122之上(例如，位於暴露部份122上方的晶種層130之上)，留下如第5圖所示之結構。在本發明之部份實施例中，在後續大量(lot)或批次的(batch)封裝元件100製程中，可重複使用模版材料150。此外，亦可拋棄模版材料150。 在本發明之部份實施例中，在導電膠152進行迴流製程的期間移除模版材料150。在其他實施例中，利用獨立的蝕刻製程或移除製程移除模版材料150。接著利用導電球140作為蝕刻罩幕，自中介層基板102的頂部表面之上移除晶種層130，如同前述實施例所提及，且如第6圖所示。The stencil material 150 is removed, and the conductive paste 152 is then subjected to a reflow process to reflow the eutectic material of the conductive paste 152 and form the conductive balls 140 over the exposed portions 122 of the substrate vias 104 (eg, over the exposed portions 122) Above the seed layer 130, leaving the structure as shown in FIG. In some embodiments of the invention, the stencil material 150 may be reused in a subsequent lot or batch of packaged component 100 processes. In addition, the stencil material 150 can also be discarded. In some embodiments of the invention, the stencil material 150 is removed during the reflow process of the conductive paste 152. In other embodiments, the stencil material 150 is removed using a separate etch process or removal process. The seed layer 130 is then removed from the top surface of the interposer substrate 102 using the conductive balls 140 as an etch mask, as mentioned in the previous embodiment, and as shown in FIG.

依據本發明之其他實施例，第8圖到第10圖為封裝元件100在不同製程階段的剖面圖，用以說明製造封裝元件100的方法。本實施例並非如同前述實施例所提及，形成毯覆式(blanket)晶種層130於中介層基板102的頂部表面之上，而是在使中介層基板102凹蝕及/或增加複數個基板通孔104的厚度之後(如第3圖所示)，於基板通孔104的暴露部份122之上電鍍一層晶種層130’，如第8圖所示。此電鍍製程可使晶種層130’的形成僅發生於基板通孔104的暴露部份122之上。晶種層130’並未完全覆蓋於中介層基板102的頂部表面之上。舉例而言，在本發明之部份實施例中，晶種層130’包括10-20μm的銅(Cu)或鎳(Ni)，此外，晶種層130’亦可包括其他尺寸與材料。舉例而言，在本發明之部份實施例中，用以形成晶種層130’的電鍍製程包括無電電鍍(electro-less plating)。此外，亦可利用其他種類的電鍍製程形成晶種層130’。8 through 10 are cross-sectional views of package component 100 at various stages of processing to illustrate a method of fabricating package component 100, in accordance with other embodiments of the present invention. This embodiment is not as mentioned in the foregoing embodiment, forming a blanket seed layer 130 over the top surface of the interposer substrate 102, but eroding and/or adding a plurality of interposer substrates 102. After the thickness of the substrate via 104 (as shown in FIG. 3), a seed layer 130' is electroplated over the exposed portion 122 of the substrate via 104, as shown in FIG. This plating process allows the formation of the seed layer 130' to occur only over the exposed portion 122 of the substrate via 104. The seed layer 130' does not completely overlie the top surface of the interposer substrate 102. For example, in some embodiments of the invention, the seed layer 130' comprises 10-20 μm of copper (Cu) or nickel (Ni), and in addition, the seed layer 130' may comprise other dimensions and materials. For example, in some embodiments of the invention, the electroplating process used to form the seed layer 130' includes electro-less plating. Further, the seed layer 130' may be formed by other kinds of electroplating processes.

導電膠152配置於模版材料(stencil material)150之間，並且形成於晶種層130’之上，如第9圖所示。利用迴流製程使導電膠152的共熔材料迴流並形成導電球140，如第10圖所示，並且移除模版材料150。此方法的優點在於，在這些實施例中，不需要進行獨立的蝕刻製程，自中介層基板102的頂部 表面上移除多餘的晶種層130’材料。The conductive paste 152 is disposed between the stencil material 150 and formed over the seed layer 130' as shown in FIG. The eutectic material of the conductive paste 152 is reflowed by the reflow process and the conductive balls 140 are formed, as shown in FIG. 10, and the stencil material 150 is removed. An advantage of this method is that in these embodiments, no separate etching process is required, from the top of the interposer substrate 102. The excess seed layer 130' material is removed from the surface.

在其他實施例中，在電鍍晶種層130’於基板通孔104的暴露部份122上之後(如第8圖所示)，利用直接球滴製程使導電球140耦合到位於基板通孔104之暴露部份122上方的晶種層130’，如第10圖所示。In other embodiments, after plating the seed layer 130' over the exposed portion 122 of the substrate via 104 (as shown in FIG. 8), the conductive ball 140 is coupled to the substrate via 104 using a direct ball drop process. The seed layer 130' above the exposed portion 122 is as shown in FIG.

依據本發明之部分實施例，第11圖為一流程圖160，用以說明封裝元件100的製造方法。在製程步驟162中，形成基板通孔104於中介層基板102之中。在製程步驟164中，凹蝕中介層基板102，以暴露出基板通孔104的部份122。在製程步驟166中，焊料球140耦合到基板通孔104的暴露部份122。In accordance with some embodiments of the present invention, FIG. 11 is a flow chart 160 for illustrating a method of fabricating package component 100. In process step 162, substrate vias 104 are formed in interposer substrate 102. In process step 164, the interposer substrate 102 is recessed to expose portions 122 of the substrate vias 104. In process step 166, solder balls 140 are coupled to exposed portions 122 of substrate vias 104.

依據本發明之其他實施例，第12圖及第13圖為剖面圖，用以說明接合積體電路晶粒172至本文所述之封裝元件100的方法。請參照第1圖到第10圖，利用本文所述之方法使導電球140形成於基板通孔104之暴露部份122上之後，在每一個位於中介層基板102之第二側108上的接觸插塞120上形成導電凸塊(conductive bump)170，如第12圖所示。舉例而言，藉由覆晶製程(flip chip)形成導電凸塊170，其中導電凸塊170接合至並取自於另一晶粒，並且藉由一迴流製程接合導電凸塊170至接觸插塞120。此外，亦可利用其他方法形成導電凸塊170。舉例而言，在本發明之部份實施例中，導電凸塊170包括覆晶接合(controlled collapse chip connection,C4)凸塊。在本發明之部份實施例中，導電凸塊170包括焊料。此外，導電凸塊170亦可包括其他種類的連接與材料。12 and 13 are cross-sectional views illustrating a method of bonding integrated circuit die 172 to package component 100 described herein in accordance with other embodiments of the present invention. Referring to FIGS. 1 through 10, after each of the conductive balls 140 is formed on the exposed portion 122 of the substrate via 104, the contact on each of the second sides 108 of the interposer substrate 102 is performed. A conductive bump 170 is formed on the plug 120 as shown in FIG. For example, the conductive bump 170 is formed by a flip chip, wherein the conductive bump 170 is bonded to and taken from another die, and the conductive bump 170 is bonded to the contact plug by a reflow process. 120. In addition, the conductive bumps 170 may be formed by other methods. For example, in some embodiments of the invention, the conductive bumps 170 include controlled collapse chip connection (C4) bumps. In some embodiments of the invention, the conductive bumps 170 comprise solder. In addition, the conductive bumps 170 may also include other kinds of connections and materials.

接著使積體電路晶粒172耦合到位於封裝元件100 上的導電凸塊170，以形成封裝半導體元件176，如第13圖所示。將位於積體電路晶粒172上的接觸插塞174對準位於封裝元件100上的導電凸塊170，並將積體電路晶粒172上的接觸插塞174與導電凸塊170配置在相對應的位置。舉例而言，可利用迴流製程將導電凸塊170接合到位於積體電路晶粒172上的接觸插塞174。在本發明之部份實施例中，可施加底部填充材料(underfill material)(未顯示於圖中)在介於晶粒172與封裝元件100之間的空間，例如介於導電凸塊170之間。在本發明之部份實施例中，接著可藉由將導電凸塊140接合至一基板、印刷電路板(printed circuit board,PCB)、支撐物(support)或其他目標物，使封裝半導體元件176應用於終端用途。The integrated circuit die 172 is then coupled to the package component 100. The conductive bumps 170 are formed to form packaged semiconductor components 176 as shown in FIG. The contact plugs 174 on the integrated circuit die 172 are aligned with the conductive bumps 170 on the package component 100, and the contact plugs 174 on the integrated circuit die 172 are disposed corresponding to the conductive bumps 170. s position. For example, the conductive bumps 170 can be bonded to the contact plugs 174 on the integrated circuit die 172 using a reflow process. In some embodiments of the invention, an underfill material (not shown) may be applied between the die 172 and the package component 100, such as between the conductive bumps 170. . In some embodiments of the present invention, the semiconductor component 176 can then be packaged by bonding the conductive bumps 140 to a substrate, printed circuit board (PCB), support, or other target. Used in terminal applications.

在本發明之部份實施例中，第14圖所示，可將封裝半導體元件176接合至另一封裝半導體元件178，以形成封裝體層疊(package-on-package,PoP)元件198，其中第14圖為封裝體層疊元件198之剖面圖，其顯示使用本文所述之封裝元件100製造封裝體層疊元件198的方法。包含本文所述之新穎的封裝元件100封裝半導體元件176包括一第一封裝半導體元件或一底部封裝半導體元件。舉例而言，可將封裝半導體元件176接合至另一封裝半導體元件178，其中封裝半導體元件178包括一第二封裝半導體元件或一頂部封裝半導體元件。封裝半導體元件176與封裝半導體元件178藉由配置於封裝半導體元件176及178周圍的複數個焊料接點(solder joints)184接合在一起。配置於封裝半導體元件176及178之間的焊料接點184的排列方式為一排或多排。如本文先前所述，底部封裝半導體元件176包括 積體電路172a接合至導電凸塊170。頂部封裝半導體元件178包括積體電路晶粒172b。頂部封裝半導體元件178的封裝182包括複數個接觸插塞180配置於其底部表面周圍之上。焊料接點184將位於頂部封裝半導體元件178之上的接觸插塞180接合至位於底部封裝半導體元件176之上的接觸插塞120。In some embodiments of the present invention, as shown in FIG. 14, the packaged semiconductor component 176 can be bonded to another packaged semiconductor component 178 to form a package-on-package (PoP) component 198, wherein 14 is a cross-sectional view of package stack component 198 showing a method of fabricating package stack component 198 using package component 100 described herein. Included in the novel package component 100 packaged semiconductor component 176 described herein includes a first packaged semiconductor component or a bottom packaged semiconductor component. For example, packaged semiconductor component 176 can be bonded to another packaged semiconductor component 178, wherein packaged semiconductor component 178 includes a second packaged semiconductor component or a top packaged semiconductor component. Packaged semiconductor component 176 and packaged semiconductor component 178 are bonded together by a plurality of solder joints 184 disposed around packaged semiconductor components 176 and 178. The solder joints 184 disposed between the packaged semiconductor components 176 and 178 are arranged in one or more rows. As described previously herein, the bottom package semiconductor component 176 includes The integrated circuit 172a is bonded to the conductive bumps 170. The top package semiconductor component 178 includes integrated circuit die 172b. The package 182 of the top package semiconductor component 178 includes a plurality of contact plugs 180 disposed over the bottom surface thereof. Solder contact 184 bonds contact plug 180 over top package semiconductor component 178 to contact plug 120 over bottom package semiconductor component 176.

關於使用本文所述之新穎封裝元件所製造的封裝體層疊元件198更詳細的細節顯示第15圖的剖面圖中。在形成焊料接點184之後(例如介於底部封裝半導體元件176與頂部封裝半導體元件178之間)，包含絕緣材料之模造成型化合物(molding compound)186配置於封裝元件100之上。在本發明之部份實施例中，模造成型化合物186並未包含於封裝體層疊元件198之中。More detailed details of the package laminate component 198 fabricated using the novel package components described herein are shown in the cross-sectional view of FIG. After forming solder contacts 184 (eg, between bottom package semiconductor component 176 and top package semiconductor component 178), a molding compound 186 comprising an insulating material is disposed over package component 100. In some embodiments of the invention, the mold-forming compound 186 is not included in the package laminate component 198.

在此顯示頂部封裝半導體元件178包含兩個積體電路晶粒172b與172c的示範例，其中積體電路晶粒172b與172c垂直堆疊於封裝182之上。此外，頂部封裝半導體元件178亦可僅包含一個積體電路晶粒172b或172c。封裝182包括基板190及複數個基板通孔188形成於其中，藉此提供頂部封裝半導體元件178垂直方向的連接。封裝182包括第一重新分配層(RDL)192a位於其底部表面上，以及第二重新分配層(RDL)192b位於其頂部表面上。重新分配層(RDL)192a及192b提供頂部封裝半導體元件178水平方向的連接。積體電路晶粒172b接合至封裝182的頂部表面。線路接合(wire bond)194a耦合位於封裝182上之接合墊(bond pad)至位於積體電路晶粒172b上之接合墊(bond pad)。積體電路晶粒172c接合至積體電路晶粒172b的 頂部表面。線路接合194b耦合位於封裝182上之接合墊至位於積體電路晶粒172c上之接合墊。模造成型化合物(molding compound)196形成於積體電路晶粒172c與封裝182之暴露部份之上。舉例而言，模造成型化合物(molding compound)196包括絕緣材料，藉以保護線路接合194a與194b。Here, an example in which the top package semiconductor component 178 includes two integrated circuit dies 172b and 172c is shown, wherein the integrated circuit dies 172b and 172c are stacked vertically above the package 182. In addition, top package semiconductor component 178 may also include only one integrated circuit die 172b or 172c. The package 182 includes a substrate 190 and a plurality of substrate vias 188 formed therein, thereby providing a vertical connection of the top package semiconductor component 178. The package 182 includes a first redistribution layer (RDL) 192a on its bottom surface and a second redistribution layer (RDL) 192b on its top surface. Redistribution layers (RDL) 192a and 192b provide a horizontally-oriented connection of the top package semiconductor component 178. The integrated circuit die 172b is bonded to the top surface of the package 182. A wire bond 194a couples a bond pad on the package 182 to a bond pad on the integrated circuit die 172b. The integrated circuit die 172c is bonded to the integrated circuit die 172b Top surface. Line bond 194b couples bond pads on package 182 to bond pads on integrated circuit die 172c. A molding compound 196 is formed over the exposed portions of the integrated circuit die 172c and the package 182. For example, the molding compound 196 includes an insulating material to protect the line bonds 194a and 194b.

舉例而言，在本發明之部份實施例中，積體電路晶粒172b及172c係利用覆晶晶圓級封裝(flip-chip wafer level packaging,WLP)技術以及線路接合製程(wire-bonding process)封裝於頂部封裝半導體元件178的基板182之上。此外，頂部封裝半導體元件178可包括一個或多個積體電路晶粒172b或172c，其中這些積體電路晶粒172b或172c係採用其他種類型的封裝系統或配置。For example, in some embodiments of the present invention, the integrated circuit dies 172b and 172c utilize flip-chip wafer level packaging (WLP) technology and a wire-bonding process. The package is over the substrate 182 of the top package semiconductor component 178. In addition, the top package semiconductor component 178 can include one or more integrated circuit dies 172b or 172c, wherein the integrated circuit dies 172b or 172c employ other types of package systems or configurations.

在本發明所顯示及前述之實施例中，每一個導電球140耦合到複數個基板通孔104。舉例而言，在第10圖中，導電球140耦合到三個基板通孔104之暴露部份122。在其他實施例中，每一個導電球140可耦合到兩個基板通孔104之暴露部份122，或耦合到四個或更多個基板通孔104之暴露部份122，未顯示於圖中。在其他實施例中，每一個導電球140耦合到僅一個基板通孔104之一個暴露部份122，如第15圖所示。In the embodiment shown and described above, each of the conductive balls 140 is coupled to a plurality of substrate vias 104. For example, in FIG. 10, conductive balls 140 are coupled to exposed portions 122 of three substrate vias 104. In other embodiments, each of the conductive balls 140 can be coupled to the exposed portions 122 of the two substrate vias 104, or to the exposed portions 122 of the four or more substrate vias 104, not shown in the figures. . In other embodiments, each of the conductive balls 140 is coupled to an exposed portion 122 of only one of the substrate vias 104, as shown in FIG.

舉例而言，在本發明之部份實施例中，所揭露之導電球140係以球柵陣列(ball grid array,BGA)的排列方式進行排列。在本發明之部份實施例中，導電球140以完全分佈(fully populated)陣列或矩陣的排列方式排列於中介層基板102之第一側106上。此外，導電球140可僅排列於中介層基板102 之中心區域，或僅排列於中介層基板102之周圍區域之一或多列，或排列於中介層基板102之中心區域與周圍區域之結合。在本發明之部份實施例中，導電球140可排列成隨機圖案(random pattern)。此外，導電球140亦可排列成其他配置方式或圖案。For example, in some embodiments of the present invention, the disclosed conductive balls 140 are arranged in a ball grid array (BGA) arrangement. In some embodiments of the invention, the conductive balls 140 are arranged on the first side 106 of the interposer substrate 102 in a fully populated array or matrix arrangement. In addition, the conductive balls 140 may be arranged only on the interposer substrate 102. The central region, or only one or more columns arranged in the peripheral region of the interposer substrate 102, or a combination of the central region of the interposer substrate 102 and the surrounding region. In some embodiments of the invention, the conductive balls 140 may be arranged in a random pattern. In addition, the conductive balls 140 may also be arranged in other configurations or patterns.

本發明所揭露之實施例包括製造封裝元件100的方法，同時也包括利用此方法所製造之封裝元件100。本發明所揭露之實施例亦包括使用在本文中所述之新穎封裝元件100進行封裝的封裝半導體元件176。本發明所揭露之實施例亦包括封裝體層疊元件198，其中封裝體層疊元件198包括在本文中所述之新穎封裝元件100。本發明所揭露之實施例尚包括將導電球140耦合至封裝基板的方法。Embodiments of the present invention include methods of fabricating package component 100, as well as package component 100 fabricated using this method. Embodiments of the present invention also include packaged semiconductor component 176 that is packaged using the novel package component 100 described herein. Embodiments of the present disclosure also include a package laminate component 198, wherein the package laminate component 198 includes the novel package component 100 described herein. Embodiments of the present disclosure also include a method of coupling conductive balls 140 to a package substrate.

本發明所揭露之實施例的優點包括提供新穎的封裝元件100，其中封裝元件100不需要用以在其表面上形成焊料球的凸塊下方金屬化層(under-ball metallization,UBM)結構，因此能夠大幅地降低製造成本與時間，並且提供非常低成本的封裝元件100。使用於傳統封裝系統的凸塊下方金屬化層(UBM)結構製造成本高昂，且需要昂貴的製程步驟，例如對數層材料層進行微影製程(photolithography)、沉積製程及圖案化製程。本發明所提出用以耦合導電球140到封裝元件100之基板通孔104之暴露部份122的方法，其優點在於不需要使用微影製程步驟，因此能夠降低成本。由於封裝元件100之導電球140側不需要凸塊下方金屬化層(UBM)結構，封裝元件100的厚度可以降低，因此能夠製造整體厚度減少的封裝體層疊元件198，實現 節省空間的目的。Advantages of embodiments of the present disclosure include providing a novel package component 100 in which package component 100 does not require an under-ball metallization (UBM) structure to form solder balls on its surface, thus The manufacturing cost and time can be drastically reduced, and the package component 100 of a very low cost is provided. Sub-bump metallization (UBM) structures used in conventional packaging systems are expensive to manufacture and require expensive process steps such as photolithography, deposition processes, and patterning processes for layers of material. The method proposed by the present invention for coupling the conductive balls 140 to the exposed portions 122 of the substrate vias 104 of the package component 100 has the advantage of eliminating the need for a lithography process step and thus reducing cost. Since the conductive ball 140 side of the package component 100 does not require a bump under metallization layer (UBM) structure, the thickness of the package component 100 can be reduced, so that the package laminate component 198 having a reduced overall thickness can be fabricated. Space saving purpose.

在本發明之部份實施例中，導電球140作為移除晶種層130時所使用的蝕刻罩幕，如此一來，在封裝元件100的製造流程中也可不必使用微影製程步驟。此外，此一新穎的封裝元件100結構以及其製造方法在製造流程中是易於實施的。In some embodiments of the present invention, the conductive ball 140 serves as an etching mask for removing the seed layer 130, so that the lithography process step is not necessary in the manufacturing process of the package component 100. Moreover, the structure of the novel package component 100 and its method of manufacture are easy to implement in the manufacturing process.

依據本發明所揭露之部份實施例，本發明提供一種封裝元件之製法，包括以下步驟：形成複數個基板通孔於一中介層基板之中。此一封裝元件之製法包括凹蝕(recessing)該中介層基板或增加該些基板通孔之厚度，藉以暴露出該些基板通孔的部份。耦合一導電球到每一個該些複數個基板通孔的暴露部份。According to some embodiments of the present invention, the present invention provides a method of fabricating a package component, comprising the steps of: forming a plurality of substrate vias in an interposer substrate. The method of fabricating the package component includes recessing the interposer substrate or increasing the thickness of the via holes of the substrate to expose portions of the via holes of the substrate. A conductive ball is coupled to the exposed portion of each of the plurality of substrate vias.

依據本發明所揭露之部份實施例，本發明提供一種封裝元件，包括一中介層基板及複數個基板通孔配置於該中介層基板中。凹蝕中介層基板至低於該些基板通孔的頂部表面。耦合一導電球到每一個該些基板通孔。According to some embodiments of the present disclosure, the present invention provides a package component including an interposer substrate and a plurality of substrate vias disposed in the interposer substrate. The interposer substrate is recessed to a top surface that is lower than the via holes of the substrate. A conductive ball is coupled to each of the substrate vias.

依據本發明所揭露之部份實施例，本發明提供一種將複數個焊料球耦合至一封裝基板之方法，包括以下步驟：提供一封裝基板，其中該封裝基板包括一中介層基板及複數個基板通孔配置於該中介層基板中。此方法尚包括凹蝕該中介層基板或增加該些基板通孔之厚度，藉以暴露出該些基板通孔的部份；以及形成一晶種層於該些基板通孔的該些暴露部份之上。耦合一焊料球到位於每一個該些基板通孔的該暴露部份之上的該晶種層。According to some embodiments of the present invention, a method for coupling a plurality of solder balls to a package substrate includes the steps of: providing a package substrate, wherein the package substrate includes an interposer substrate and a plurality of substrates The through holes are disposed in the interposer substrate. The method further includes recessing the interposer substrate or increasing the thickness of the substrate vias to expose portions of the substrate vias; and forming a seed layer on the exposed portions of the substrate vias Above. A solder ball is coupled to the seed layer over the exposed portion of each of the substrate vias.

雖然本發明已以數個較佳實施例揭露如上，然其 並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the invention has been disclosed above in several preferred embodiments, It is not intended to limit the invention, and any person skilled in the art can make any modifications and refinements without departing from the spirit and scope of the invention. The scope is defined.

100‧‧‧封裝元件100‧‧‧Package components

102‧‧‧中介層基板102‧‧‧Interposer substrate

104‧‧‧基板通孔(TSV)104‧‧‧Substrate Through Hole (TSV)

106‧‧‧中介層基板之第一側106‧‧‧The first side of the interposer substrate

108‧‧‧中介層基板之第二側108‧‧‧Second side of the interposer substrate

110‧‧‧重新分配層(RDL)110‧‧‧Reassignment Layer (RDL)

112‧‧‧線路112‧‧‧ lines

114‧‧‧絕緣材料114‧‧‧Insulation materials

116‧‧‧第一導電材料116‧‧‧First conductive material

118‧‧‧第二導電材料118‧‧‧Second conductive material

120‧‧‧接觸插塞120‧‧‧Contact plug

122‧‧‧暴露部份122‧‧‧Exposed parts

130‧‧‧晶種層130‧‧‧ seed layer

140‧‧‧導電球140‧‧‧Electrical ball

Claims (10)

一種封裝元件之製法，包括以下步驟：形成複數個基板通孔(through-substrate vias,TSVs)於一中介層基板之中；凹蝕(recessing)該中介層基板或增加該些基板通孔之厚度，藉以暴露出該些複數個基板通孔的部份，以形成該些基板通孔的該暴露部份；以及耦合一導電球到每一個該些基板通孔的該暴露部份，其中該些基板通孔的該暴露部份突出至該導電球之一部分中。 A method of fabricating a package component, comprising the steps of: forming a plurality of through-substrate vias (TSVs) in an interposer substrate; recessing the interposer substrate or increasing a thickness of the via holes of the substrate And exposing portions of the plurality of substrate vias to form the exposed portions of the substrate vias; and coupling a conductive ball to the exposed portions of each of the substrate vias, wherein the portions The exposed portion of the substrate via extends into a portion of the conductive ball. 如申請專利範圍第1項所述之封裝元件之製法，其中耦合該導電球到每一個該些基板通孔的該暴露部份包括利用一球滴製程(ball drop process)使該些導電球耦合到每一個該些基板通孔的該暴露部份，及迴流該些導電球之一共熔(eutectic)材料。 The method of fabricating the package component of claim 1, wherein coupling the conductive ball to the exposed portion of each of the substrate vias comprises coupling the conductive balls by a ball drop process And exposing the exposed portion of each of the substrate vias and reflowing one of the conductive balls to a eutectic material. 如申請專利範圍第1項所述之封裝元件之製法，其中耦合該導電球到每一個該些基板通孔的該暴露部份包括形成一導電膠配置於一模版材料(stencil material)之間並且位於該中介層基板及該些基板通孔的該暴露部份之上，移除該模版材料，及迴流該導電膠之一共熔材料。 The method of fabricating a package component according to claim 1, wherein the coupling the conductive ball to the exposed portion of each of the substrate vias comprises forming a conductive paste disposed between a stencil material and Located on the interposer substrate and the exposed portion of the substrate vias, the stencil material is removed, and one of the eutectic materials of the conductive paste is reflowed. 如申請專利範圍第1項所述之封裝元件之製法，其中增加該些複數個基板通孔之厚度包括下列方法：電鍍製程、沉積製程或上述之組合。 The method of manufacturing a package component according to claim 1, wherein increasing the thickness of the plurality of substrate via holes comprises the following methods: an electroplating process, a deposition process, or a combination thereof. 如申請專利範圍第1項所述之封裝元件之製法，其中耦合該導電球包括耦合一個該導電球到複數個基板通孔或到每 一個該些複數個基板通孔。 The method of fabricating a package component according to claim 1, wherein coupling the conductive ball comprises coupling a conductive ball to a plurality of substrate vias or to each One of the plurality of substrate vias. 一種封裝元件，包括：一中介層基板；複數個基板通孔配置於該中介層基板中，其中該中介層基板凹蝕至低於該些基板通孔的頂部表面；以及一導電球耦合到每一個該些基板通孔，其中該些複數個基板通孔包括暴露基板通孔(exposed TSVs,eTSVs)，且暴露基板通孔突出至該導電球之一部分中。 A package component comprising: an interposer substrate; a plurality of substrate vias disposed in the interposer substrate, wherein the interposer substrate is recessed to be lower than a top surface of the substrate vias; and a conductive ball is coupled to each And a plurality of substrate vias, wherein the plurality of substrate vias comprise exposed TSVs (eTSVs), and the exposed substrate vias protrude into a portion of the conductive balls. 如申請專利範圍第6項所述之封裝元件，其中耦合到該些基板通孔的該導電球配置於中介層基板的一第一側上，其中該封裝元件尚包括一重新分配層(redistribution layer,RDL)於該中介層基板的一第二側上，且其中該重新分配層包括複數個接觸插塞配置於該重新分配層的一表面上。 The package component of claim 6, wherein the conductive ball coupled to the substrate vias is disposed on a first side of the interposer substrate, wherein the package component further includes a redistribution layer , RDL) on a second side of the interposer substrate, and wherein the redistribution layer includes a plurality of contact plugs disposed on a surface of the redistribution layer. 如申請專利範圍第6項所述之封裝元件，其中該些暴露基板通孔突出於中介層基板之頂部表面約10-20μm。 The package component of claim 6, wherein the exposed substrate vias protrude from a top surface of the interposer substrate by about 10-20 μm. 一種封裝元件之製法，包括以下步驟：提供一封裝基板，其中該封裝基板包括一中介層基板及複數個基板通孔配置於該中介層基板中；凹蝕該中介層基板或增加該些基板通孔之厚度，以暴露出該些基板通孔的部份；形成一晶種層於該些基板通孔的該些暴露部份之上；以及耦合一焊料球到位於每一個該些基板通孔的該暴露部份之上的該晶種層，其中該些基板通孔的該些暴露部份突出至該焊料球之一部分中。 A method for manufacturing a package component, comprising the steps of: providing a package substrate, wherein the package substrate comprises an interposer substrate and a plurality of substrate vias disposed in the interposer substrate; etching the interposer substrate or adding the substrate via a thickness of the hole to expose portions of the substrate via holes; forming a seed layer over the exposed portions of the substrate via holes; and coupling a solder ball to each of the substrate via holes The seed layer above the exposed portion, wherein the exposed portions of the substrate vias protrude into a portion of the solder ball. 如申請專利範圍第9項所述之封裝元件之製法，其中凹蝕該中介層基板包括下列方法：一蝕刻製程、一化學機械研磨(chemical-mechanical polish,CMP)製程及上述之組合。The method of fabricating a package component according to claim 9, wherein the etching the interposer substrate comprises the following methods: an etching process, a chemical-mechanical polish (CMP) process, and combinations thereof.
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