TWI497236B - - Google Patents
Info
- Publication number
- TWI497236B TWI497236B TW101149903A TW101149903A TWI497236B TW I497236 B TWI497236 B TW I497236B TW 101149903 A TW101149903 A TW 101149903A TW 101149903 A TW101149903 A TW 101149903A TW I497236 B TWI497236 B TW I497236B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012100770464A CN102610511A (zh) | 2012-03-21 | 2012-03-21 | 光刻胶的去除方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201339769A TW201339769A (zh) | 2013-10-01 |
TWI497236B true TWI497236B (zh) | 2015-08-21 |
Family
ID=46527801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101149903A TW201339769A (zh) | 2012-03-21 | 2012-12-25 | 光刻膠的去除方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102610511A (zh) |
TW (1) | TW201339769A (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105988308A (zh) * | 2015-03-03 | 2016-10-05 | 上海凸版光掩模有限公司 | 一种掩模版上残胶的去除方法 |
CN117936376B (zh) * | 2024-03-25 | 2024-06-07 | 上海谙邦半导体设备有限公司 | 一种碳化硅沟槽的刻蚀方法及碳化硅半导体器件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200631091A (en) * | 2004-12-30 | 2006-09-01 | Tokyo Electron Ltd | Low-rressure removal of photoresist and etch residue |
CN1929096A (zh) * | 2005-09-09 | 2007-03-14 | 东京毅力科创株式会社 | 等离子体灰化方法 |
CN102208333A (zh) * | 2011-05-27 | 2011-10-05 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050101135A1 (en) * | 2003-11-12 | 2005-05-12 | Lam Research Corporation | Minimizing the loss of barrier materials during photoresist stripping |
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2012
- 2012-03-21 CN CN2012100770464A patent/CN102610511A/zh active Pending
- 2012-12-25 TW TW101149903A patent/TW201339769A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200631091A (en) * | 2004-12-30 | 2006-09-01 | Tokyo Electron Ltd | Low-rressure removal of photoresist and etch residue |
CN1929096A (zh) * | 2005-09-09 | 2007-03-14 | 东京毅力科创株式会社 | 等离子体灰化方法 |
CN102208333A (zh) * | 2011-05-27 | 2011-10-05 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102610511A (zh) | 2012-07-25 |
TW201339769A (zh) | 2013-10-01 |