TWI497236B - - Google Patents

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Publication number
TWI497236B
TWI497236B TW101149903A TW101149903A TWI497236B TW I497236 B TWI497236 B TW I497236B TW 101149903 A TW101149903 A TW 101149903A TW 101149903 A TW101149903 A TW 101149903A TW I497236 B TWI497236 B TW I497236B
Authority
TW
Taiwan
Application number
TW101149903A
Other versions
TW201339769A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201339769A publication Critical patent/TW201339769A/zh
Application granted granted Critical
Publication of TWI497236B publication Critical patent/TWI497236B/zh

Links

TW101149903A 2012-03-21 2012-12-25 光刻膠的去除方法 TW201339769A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012100770464A CN102610511A (zh) 2012-03-21 2012-03-21 光刻胶的去除方法

Publications (2)

Publication Number Publication Date
TW201339769A TW201339769A (zh) 2013-10-01
TWI497236B true TWI497236B (zh) 2015-08-21

Family

ID=46527801

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101149903A TW201339769A (zh) 2012-03-21 2012-12-25 光刻膠的去除方法

Country Status (2)

Country Link
CN (1) CN102610511A (zh)
TW (1) TW201339769A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105988308A (zh) * 2015-03-03 2016-10-05 上海凸版光掩模有限公司 一种掩模版上残胶的去除方法
CN117936376B (zh) * 2024-03-25 2024-06-07 上海谙邦半导体设备有限公司 一种碳化硅沟槽的刻蚀方法及碳化硅半导体器件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200631091A (en) * 2004-12-30 2006-09-01 Tokyo Electron Ltd Low-rressure removal of photoresist and etch residue
CN1929096A (zh) * 2005-09-09 2007-03-14 东京毅力科创株式会社 等离子体灰化方法
CN102208333A (zh) * 2011-05-27 2011-10-05 中微半导体设备(上海)有限公司 等离子体刻蚀方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050101135A1 (en) * 2003-11-12 2005-05-12 Lam Research Corporation Minimizing the loss of barrier materials during photoresist stripping

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200631091A (en) * 2004-12-30 2006-09-01 Tokyo Electron Ltd Low-rressure removal of photoresist and etch residue
CN1929096A (zh) * 2005-09-09 2007-03-14 东京毅力科创株式会社 等离子体灰化方法
CN102208333A (zh) * 2011-05-27 2011-10-05 中微半导体设备(上海)有限公司 等离子体刻蚀方法

Also Published As

Publication number Publication date
CN102610511A (zh) 2012-07-25
TW201339769A (zh) 2013-10-01

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