TWI496296B - - Google Patents

Info

Publication number
TWI496296B
TWI496296B TW101105533A TW101105533A TWI496296B TW I496296 B TWI496296 B TW I496296B TW 101105533 A TW101105533 A TW 101105533A TW 101105533 A TW101105533 A TW 101105533A TW I496296 B TWI496296 B TW I496296B
Authority
TW
Taiwan
Application number
TW101105533A
Other versions
TW201336090A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW101105533A priority Critical patent/TW201336090A/zh
Publication of TW201336090A publication Critical patent/TW201336090A/zh
Application granted granted Critical
Publication of TWI496296B publication Critical patent/TWI496296B/zh

Links

TW101105533A 2012-02-20 2012-02-20 掘井引流式二極體元件／組件及其製造方法 TW201336090A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW101105533A TW201336090A (zh) 2012-02-20 2012-02-20 掘井引流式二極體元件／組件及其製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101105533A TW201336090A (zh) 2012-02-20 2012-02-20 掘井引流式二極體元件／組件及其製造方法

Publications (2)

Publication Number Publication Date
TW201336090A TW201336090A (zh) 2013-09-01
TWI496296B true TWI496296B (zh) 2015-08-11

Family

ID=49627487

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101105533A TW201336090A (zh) 2012-02-20 2012-02-20 掘井引流式二極體元件／組件及其製造方法

Country Status (1)

Country Link
TW (1) TW201336090A (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63155678A (ja) * 1986-12-18 1988-06-28 Sanyo Electric Co Ltd 半導体装置の保護ダイオ−ド
US6762439B1 (en) * 2001-07-05 2004-07-13 Taiwan Semiconductor Manufacturing Company Diode for power protection
US7737470B2 (en) * 2003-09-25 2010-06-15 Infineon Technologies Ag High-frequency diode
US7910410B2 (en) * 2008-04-23 2011-03-22 Fairchild Semiconductor Corporation Integrated low leakage Schottky diode
US20120261804A1 (en) * 2011-04-15 2012-10-18 International Business Machines Corporation Vertical substrate diode, method of manufacture and design structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63155678A (ja) * 1986-12-18 1988-06-28 Sanyo Electric Co Ltd 半導体装置の保護ダイオ−ド
US6762439B1 (en) * 2001-07-05 2004-07-13 Taiwan Semiconductor Manufacturing Company Diode for power protection
US7737470B2 (en) * 2003-09-25 2010-06-15 Infineon Technologies Ag High-frequency diode
US7910410B2 (en) * 2008-04-23 2011-03-22 Fairchild Semiconductor Corporation Integrated low leakage Schottky diode
US20120261804A1 (en) * 2011-04-15 2012-10-18 International Business Machines Corporation Vertical substrate diode, method of manufacture and design structure

Also Published As

Publication number Publication date
TW201336090A (zh) 2013-09-01

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