TWI495951B - Ultra-thin polymeric adhesion layer - Google Patents
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本專利申請案在美國專利法第119條(e)(1)項之規定下聲稱擁有2007年12月4日提出之美國專利臨時申請案號60/992,179的權利,將其併入於此以供參考。本專利申請案在美國專利法第120條之規定下亦為2005年7月22日提出之美國專利申請案號11/187,406和11/187,407以及2007年4月12日提出之美國專利申請案號11/734,542的部份延續申請案,將其全部併入於此以供參考。美國專利申請案號11/734,542為美國專利申請案號11/187,406和11/187,407的部份延續申請案。This patent application claims the benefit of U.S. Patent Provisional Application Serial No. 60/992,179, filed on Dec. 4, 2007, which is hereby incorporated by for reference. U.S. Patent Application Serial Nos. 11/187,406 and 11/187,407, filed on July 22, 2005, and U.S. Patent Application Serial No. Part Continuation of the Application is incorporated herein by reference. U.S. Patent Application Serial No. 11/734,542 is a continuation-in-part of U.S. Patent Application Serial Nos. 11/187,406 and 11/187,407.
美國政府具有此發明之無償許可以及在有限情況下限制專利權人在如同國家標準研究所(NIST)所頒發ATP獎之70NANB4H3012的合理條件下授予他人使用許可的權利。The U.S. government has a free license for this invention and, in limited circumstances, restricts the patentee’s right to grant permission to use the license under the reasonable conditions of the 70th NNB4H3012 issued by the National Institute of Standards (NIST).
本發明領域一般係關於構造的奈米製程。更明確而言,本發明係關於一種超薄聚合性黏著層。The field of the invention generally relates to a nano process of construction. More specifically, the present invention relates to an ultrathin polymerizable adhesive layer.
奈米製程包括具有100奈米或更小尺寸特徵之極小型結構的製程。在應用上已造成巨大影響的奈米製程為積體電路的加工。半導體加工業仍持續力求更高的產量同時增加每單位面積形成於基板上的電路,因此奈米製程變得更加重要。奈米製程可提供更佳的製程控制同時允許持續地縮小形成構造的最小特徵尺寸。發展於其他領域的奈米製程已被應用於生物技術、光學技術、機械系統等。The nanometer process includes a process of extremely small structure having a feature of 100 nm or less. The nanometer process that has been greatly affected by the application is the processing of the integrated circuit. The semiconductor processing industry continues to strive for higher yields while increasing the number of circuits formed per unit area on the substrate, so the nanometer process becomes more important. The nanometer process provides better process control while allowing for a continuous reduction in the minimum feature size that forms the structure. Nanotechnology developed in other fields has been applied to biotechnology, optical technology, mechanical systems, and the like.
目前使用中的一種舉例性奈米製程技術通常被稱為壓印微影術(imprint lithography)。舉例性壓印微影術製程已被詳述於大量的文獻中,例如美國專利申請公開案2004/0065976、美國專利申請公開案2004/0065252,和美國專利案6,936,194,將其全部併入於此以供參考。An exemplary nanofabrication technique currently in use is commonly referred to as imprint lithography. An exemplary embossing lithography process has been described in detail in a number of documents, for example, U.S. Patent Application Publication No. 2004/0065976, U.S. Patent Application Publication No. 2004/006525, and U.S. Patent No. 6,936,194 for reference.
分別被揭示於上述美國專利申請公開案和專利的壓印微影術包括在可塑(聚合)層內形成一浮雕圖案以及將對應該浮雕圖案的圖案轉移至一底層基板。該基板被置於一可調節位置的移動台上以利於圖案化製程。該圖案化製程利用一與基板隔開的模板以及將成形液塗抹於該模板和基板之間。該成形液被固化而形成一具有圖案與接觸成形液之模板表面形狀一致的剛性層。固化之後,分開模板和剛性層而分開該模板和基板。然後進行基板和固化層的另一製程而將浮雕影像轉移入該相當於固化層內圖案的基板。Imprint lithography, which is disclosed in the above-mentioned U.S. Patent Application Publications and patents, respectively, discloses the formation of a embossed pattern in a moldable (polymeric) layer and the transfer of a pattern corresponding to the embossed pattern to an underlying substrate. The substrate is placed on a mobile station in an adjustable position to facilitate the patterning process. The patterning process utilizes a template spaced from the substrate and a molding solution applied between the template and the substrate. The forming liquid is cured to form a rigid layer having a pattern conforming to the shape of the surface of the template contacting the forming liquid. After curing, the template and substrate are separated by separating the template and the rigid layer. Another process of the substrate and the cured layer is then performed to transfer the relief image into the substrate corresponding to the pattern in the cured layer.
在一態樣中,一種壓印微影術壓印堆疊體包括一基板以及一附著至該基板的聚合性黏著層。在另一態樣中,一黏著層藉由旋塗可聚合組成物於壓印微影術基板上以及固化該可聚合組成物以形成附著至壓印微影術基板的一聚合性黏著層而被形成於一壓印微影術基板上。該可聚合組成物包括具有至少約2奈米延伸聚合主鏈長度的聚合成分。該聚合成分的主鏈在壓印微影術基板表面上實質上對齊成一平面構形。固化該可聚合組成物而形成一聚合性黏著層。該聚合性黏著層的厚度為小於約2奈米。In one aspect, an imprint lithography imprint stack includes a substrate and a polymeric adhesive layer attached to the substrate. In another aspect, an adhesive layer is formed by spin coating a polymerizable composition onto an imprint lithography substrate and curing the polymerizable composition to form a polymeric adhesive layer attached to the imprint lithography substrate. It is formed on an imprint lithography substrate. The polymerizable composition comprises a polymeric component having a length of the extended polymeric backbone of at least about 2 nanometers. The backbone of the polymeric component is substantially aligned in a planar configuration on the surface of the embossed lithography substrate. The polymerizable composition is cured to form a polymerizable adhesive layer. The thickness of the polymerizable adhesive layer is less than about 2 nm.
在一些具體實施例中,該聚合性黏著層的厚度為約1奈米。可從包括具有至少約2奈米延伸聚合主鏈長度之聚合成分的組成物形成該聚合性黏著層。在一些實例中,可從包括一芳族基的化合物合成該聚合成分。在某些實例中,該聚合成分包含一能結合至基板的羧酸官能基以及另一能與一壓印光阻劑結合的官能基。該聚合性黏著層在壓印堆疊體上的壓印光阻劑固化期間能結合一壓印光阻劑。In some embodiments, the polymeric adhesive layer has a thickness of about 1 nanometer. The polymeric adhesive layer can be formed from a composition comprising a polymeric component having a length of the polymeric backbone extending at least about 2 nanometers. In some examples, the polymeric component can be synthesized from a compound that includes an aromatic group. In certain instances, the polymeric component comprises a carboxylic acid functional group capable of bonding to a substrate and another functional group capable of binding to an imprinting photoresist. The polymeric adhesive layer can incorporate an embossed photoresist during curing of the embossed photoresist on the embossed stack.
藉由參考附圖的具體實施例提供本發明具體實施例的說明之後將可更加瞭解本發明。然而必需注意該附圖說明僅為本發明典型的具體實施例而不可推論為本發明僅侷限於該範圍內。The invention will be more apparent from the following detailed description of embodiments of the invention. It is to be understood that the description of the drawings is only a typical embodiment of the invention and is not intended to
第1圖為根據先前技術的一簡單平面圖;Figure 1 is a simplified plan view of the prior art;
第2圖為根據本發明置於一基板上之模板和壓印材料的一簡單立面圖;Figure 2 is a simplified elevational view of a stencil and embossing material placed on a substrate in accordance with the present invention;
第3圖為第2圖所示壓印材料已被圖案化及形成固化層之模板和基板的一簡單立面圖;Figure 3 is a simplified elevational view of the template and substrate of the imprinting material shown in Figure 2, which has been patterned and formed into a cured layer;
第4圖為接觸壓印材料而於固化壓印材料和模板間形成弱邊界層之模板的一剖面圖;Figure 4 is a cross-sectional view of a template for forming a weak boundary layer between a cured imprint material and a stencil in contact with an imprint material;
第5圖為第2圖所示壓印材料之液滴而顯示該液滴被分開形成富含表面活性劑區和缺乏表面活性劑區的一詳細視圖;Figure 5 is a detailed view of the droplets of the imprint material shown in Figure 2, showing that the droplets are separated to form a surfactant-rich region and a surfactant-deficient region;
第6圖為利用旋塗法沈積壓印材料層而顯示該層被分開形成富含表面活性劑區和缺乏表面活性劑區的一詳細視圖;Figure 6 is a detailed view showing the deposition of the layer of imprinted material by spin coating to show that the layer is separated to form a surfactant-rich region and a surfactant-deficient region;
第7圖為接觸第5或6圖所示方法沈積於包括一底層的基板上之固化壓印材料模板的一剖面圖;Figure 7 is a cross-sectional view of a cured imprint material template deposited on a substrate comprising a bottom layer by contact with the method of Figure 5 or 6;
第8圖為可被用於形成一底層之組成物成分的化學構造式;Figure 8 is a chemical structural formula that can be used to form a composition of a bottom layer;
第9圖為可被用於形成一底層之組成物成分的化學構造式;Figure 9 is a chemical structural formula that can be used to form a composition of a bottom layer;
第10圖為可被用於形成一底層之組成物成分的化學構造式;Figure 10 is a chemical structural formula that can be used to form a composition of a bottom layer;
第11圖為可被用於形成一底層之組成物成分的化學構造式;Figure 11 is a chemical structural formula that can be used to form a composition of a bottom layer;
第12A和12B圖為用於測量聚合性黏著層厚度的測量位置;Figures 12A and 12B are measurement positions for measuring the thickness of the polymeric adhesive layer;
第13圖為塗佈聚合性黏著層之矽晶圓剖面的一掃描電子顯微照片影像。Figure 13 is a scanning electron micrograph image of a cross-section of a germanium wafer coated with a polymerizable adhesive layer.
參考第1和2圖,根據本發明的一模具36可被用於系統10內,並且其可界定一平滑或平面外形的表面(未顯示)。或者,模具36可包括被複數個定距離凹痕38和凸出物40所定義的形狀。該複數個形狀為形成基板42上圖案之基礎的原始圖案。基板42可包含一裸晶圓或一或多層置於其上的晶圓,其中之一為底層45。就此目的,其可縮短模具36和基板42之間的距離“d”。依此方式,模具36上的形狀可被壓印入放置壓印材料於具有實質平面外形表面44部分之基板42上的整合區。應瞭解可利用任何已知技術沈積該壓印材料,例如旋塗法、浸塗法等。然而,在本發明實例中,該壓印材料被沈積於基板上42形成複數個隔開的液滴46。形成的壓印材料係選自可記錄原始圖案亦即刻錄圖案的一聚合及交聯組成物。Referring to Figures 1 and 2, a mold 36 in accordance with the present invention can be used in system 10 and can define a smooth or planar outer surface (not shown). Alternatively, the mold 36 can include a shape defined by a plurality of fixed distance indentations 38 and projections 40. The plurality of shapes are original patterns forming the basis of the pattern on the substrate 42. Substrate 42 may comprise a bare wafer or one or more wafers placed thereon, one of which is bottom layer 45. For this purpose, it can shorten the distance "d" between the mold 36 and the substrate 42. In this manner, the shape on the mold 36 can be embossed into an integrated region on which the imprint material is placed on the substrate 42 having a portion of the substantially planar profile surface 44. It will be appreciated that the imprint material can be deposited using any known technique, such as spin coating, dip coating, and the like. However, in the present example, the imprint material is deposited on the substrate 42 to form a plurality of spaced apart droplets 46. The embossed material formed is selected from a polymeric and crosslinked composition that can record the original pattern, i.e., the recorded pattern.
明確而言,產生記錄於該壓印材料的圖案部分係藉由與模具36的交互作用,例如電交互作用、磁力交互作用、熱交互作用、機械交互作用等。在本發明的實例中,模具36與壓印材料進行機械性接觸,播撒液滴46,而使壓印材料在表面44上形成一連接層50。在一具體實施例中,縮短距離“d”而使壓印材料的次分段52進入和充填凹痕38。為有利於充填凹痕38,在模具36和液滴46接觸之前以氦充滿模具36和液滴46間的空氣或完全抽空或部分抽空氦氣。Specifically, the portion of the pattern recorded on the embossed material is produced by interaction with the mold 36, such as electrical interaction, magnetic interaction, thermal interaction, mechanical interaction, and the like. In the example of the present invention, the mold 36 is in mechanical contact with the embossing material to spread the droplets 46 such that the embossing material forms a tie layer 50 on the surface 44. In a specific embodiment, the distance "d" is shortened to cause the secondary segment 52 of the imprint material to enter and fill the indent 38. To facilitate filling of the indentations 38, the air between the mold 36 and the droplets 46 is filled with helium or completely evacuated or partially evacuated before the mold 36 and the droplets 46 are contacted.
該壓印材料被充填入凹痕38同時以壓印材料的連接層覆蓋表面44。在本發明的具體實施例中,當達到通常為最短的所欲距離“d”之後其餘壓印材料的次分段54將被凸出物40所重疊。此動作將使連接層50的次分段52具有一厚度t1,以及次分段54具有一厚度t2。視應用的不同厚度“t1”和“t2”可為任何所欲的厚度。其後,視壓印材料連接層50可藉由暴露於適當固化劑比方光化能例如寬頻紫外光能、熱能等而被固化。此將造成壓印材料的聚合和交聯。該全部過程可在環境溫度和壓力下進行,或在具有所欲溫度和壓力的環控室下進行。此方法中,連接層50被固化而產生符合模具36之表面58形狀的側邊56。The embossed material is filled into the indentations 38 while the surface 44 is covered with a tie layer of embossed material. In a particular embodiment of the invention, the sub-segments 54 of the remaining imprint material will be overlapped by the projections 40 after reaching the desired shortest desired distance "d". This action will cause the secondary section 52 of the tie layer 50 to have a thickness t1 and the secondary section 54 to have a thickness t2. The different thicknesses "t1" and "t2" depending on the application can be any desired thickness. Thereafter, the embossed material connection layer 50 can be cured by exposure to a suitable curing agent such as broadband ultraviolet light energy, thermal energy, or the like. This will result in polymerization and crosslinking of the imprinted material. This entire process can be carried out at ambient temperature and pressure, or under a controlled atmosphere having the desired temperature and pressure. In this method, the tie layer 50 is cured to create a side 56 that conforms to the shape of the surface 58 of the mold 36.
參考第1、2和3圖,根據所使用的獨特圖案化製程壓印材料的特性對有效圖案化基板42極為重要。例如,壓印材料較佳為具有某些易於快速和均勻充填該模具36外形的特性因而使全部t1和t2具有實質上一致的厚度。就此目的,較佳為根據所使用的沈積法選擇壓印材料的黏度以獲得上述的特性。如上所述,可利用各種技術沈積壓印材料於基板42上。若欲使壓印材料被沈積成複數個不連續的分開液滴46,較佳為以具有相對低黏度例如在0.5至20釐泊(cP)範圍內的組成物形成該壓印材料。由於該壓印材料係同時被播撒和圖案化,並且該圖案係藉由暴露於輻射線而立即被固化成連接層50,較佳為使組成物分佈於基板42及/或模具36表面並且避免在聚合後形成坑或洞。若利用旋塗法沈積該壓印材料時,較佳為使用較高黏度的材料例如大於10cP及通常為數百至數千cP的黏度,其係在無溶劑之下進行黏度的測量。Referring to Figures 1, 2 and 3, the effective patterning of the substrate 42 is extremely important depending on the characteristics of the unique patterning process imprint material used. For example, the embossed material preferably has certain characteristics that facilitate the rapid and uniform filling of the shape of the mold 36 such that all of t1 and t2 have substantially uniform thicknesses. For this purpose, it is preferred to select the viscosity of the imprint material in accordance with the deposition method used to obtain the above characteristics. As described above, the imprint material can be deposited on the substrate 42 using a variety of techniques. If the imprint material is to be deposited as a plurality of discrete discrete droplets 46, the imprint material is preferably formed from a composition having a relatively low viscosity, for example, in the range of 0.5 to 20 centipoise (cP). Since the imprint material is simultaneously spread and patterned, and the pattern is immediately cured into the connection layer 50 by exposure to radiation, it is preferred to distribute the composition on the surface of the substrate 42 and/or the mold 36 and to avoid A pit or hole is formed after polymerization. When the imprint material is deposited by spin coating, it is preferred to use a material having a higher viscosity, for example, a viscosity of more than 10 cP and usually several hundred to several thousand cP, which is measured without a solvent.
除了上述的特性之外,至於液相特性而言,較佳為利用可使壓印材料具有某些固化相特性的組成物。例如,在連接層50固化之後該壓印材料較佳為具有優先黏附和釋放的特性。明確而言,該壓印材料的組成物較佳為可被製成優先黏附至基板42及優先釋放模具36的連接層50。依此方式,可避免刻錄圖案特別在撕離、拉伸而與模具36分開時的變形或連接層50其他構造上的劣化。In addition to the above characteristics, as for the liquid phase characteristics, it is preferred to use a composition which allows the imprint material to have certain curing phase characteristics. For example, the imprint material preferably has the property of preferential adhesion and release after the tie layer 50 is cured. Specifically, the composition of the imprint material is preferably a tie layer 50 that can be preferentially adhered to the substrate 42 and the preferential release mold 36. In this way, it is possible to avoid deterioration of the recording pattern particularly when peeling off, stretching to separate from the mold 36, or other construction of the connecting layer 50.
該形成具有上述特性之壓印材料的組成物可能含有不同的組成成分。此將導致需利用許多不同材料形成該基板42。因此,視形成基板42的材料將具有不同的表面44化學組成物。例如,可從矽、塑膠、砷化鎵、碲化汞及其複合材料形成基板42。如上所述,基板42可包括如其上形成連接層50之底層45所示的一或多層,例如介電層、金屬層、半導體層、平坦化層等。就此目的,底層45將利用任何適當的技術例如化學汽相沈積法、旋塗法等被沈積於一晶圓47上。此外,底層45可被形成自任何適當的材料,例如矽、鍺等。此外,模具36可被形成自數種材料,例如熔矽、石英、氧化銦錫鑽石樣碳、MoSi、溶膠凝膠等。The composition forming the imprint material having the above characteristics may contain different constituent components. This will result in the need to form the substrate 42 from a number of different materials. Thus, the material forming the substrate 42 will have a different surface 44 chemical composition. For example, the substrate 42 can be formed from tantalum, plastic, gallium arsenide, mercury telluride, and composite materials thereof. As noted above, the substrate 42 can include one or more layers, such as a dielectric layer, a metal layer, a semiconductor layer, a planarization layer, and the like, as shown by the underlayer 45 on which the tie layer 50 is formed. For this purpose, the bottom layer 45 will be deposited on a wafer 47 using any suitable technique, such as chemical vapor deposition, spin coating, or the like. Additionally, the bottom layer 45 can be formed from any suitable material, such as tantalum, niobium, and the like. Further, the mold 36 may be formed from several materials such as fused, quartz, indium tin oxide diamond-like carbon, MoSi, sol gel, and the like.
已發現產生連接層50的組成物可被製造自數種不同家族的散裝材料。例如,可製造該組成物的材料其中一些為乙烯醚、丙烯酸甲酯、環氧樹脂、硫醇烯和丙烯酸鹽。It has been found that the composition that produces the tie layer 50 can be made from bulk materials of several different families. For example, some of the materials from which the composition can be made are vinyl ether, methyl acrylate, epoxy resin, thiol olefin, and acrylate.
下列為形成連接層50的舉例性散裝材料:The following are exemplary bulk materials for forming the tie layer 50:
異基丙烯酸酯different Acrylate
丙烯酸正己酯N-hexyl acrylate
乙二醇雙丙烯酸酯Ethylene glycol diacrylate
2-羧酸基-2-甲基-1-苯基-丙-1-酮2-carboxylic acid-2-methyl-1-phenyl-propan-1-one
丙烯酸鹽成分、異基丙烯酸酯(IBOA)具有下列的構造:Acrylate composition, different The acrylate (IBOA) has the following structure:
以及包含約47%的基體材料重量比,但含量為包括20%至80%的範圍。因此,連接層50的機械性能主要歸因於IBOA。IBOA的一舉例性來源為賓州Extonln市Sartomer公司的市售商品SR506。And comprising a weight ratio of about 47% of the matrix material, but the content is in the range of 20% to 80%. Therefore, the mechanical properties of the tie layer 50 are primarily attributable to the IBOA. An exemplary source of IBOA is commercially available product SR506 from Sartomer Corporation of Extonln, Pa.
丙烯酸正己酯(n-HA)成分具有下列的構造:The n-hexyl acrylate (n-HA) component has the following structure:
以及包含約25%的基體材料重量比,但總括含量為在0%至50%的範圍。其亦提供連接層50的彈性,n-HA用於降低基體材料的黏度因而使基體材料在液相時的黏度低於約10cP。n-HA成分的舉例性來源為威斯康辛州Milwaukee市的Aldrich化學公司。And comprising about 25% by weight of the matrix material, but the total content is in the range of 0% to 50%. It also provides the flexibility of the tie layer 50, which is used to reduce the viscosity of the matrix material such that the matrix material has a viscosity in the liquid phase of less than about 10 cP. An exemplary source of the n-HA component is Aldrich Chemical Company, Milwaukee, Wisconsin.
乙二醇雙丙烯酸酯的交聯成分具有下列的構造:The cross-linking component of ethylene glycol diacrylate has the following structure:
以及包含約25%的基體材料重量比,但總括含量為在10%至50%的範圍。EGDA亦可增加模數和剛度,以及在基體材料聚合期間有利於n-HA和IBOA的交聯。And comprising about 25% by weight of the matrix material, but the total content is in the range of 10% to 50%. EGDA can also increase modulus and stiffness, as well as facilitate cross-linking of n-HA and IBOA during polymerization of the matrix material.
引發劑成分,2-羧酸基-2-甲基-1-苯基-丙-1-酮係供應自紐約Tarrytown市Ciba專業化學公司DAROCURTM 1173的市售商品,及具有下列的構造:Initiator component, 2-methyl-1-phenyl-2-carboxylic acid - based propan-1-one available from Ciba Specialty Chemicals Tarrytown, New York City company DAROCUR TM commercially available in 1173, and has the following structure:
以及包含約3%的基體材料重量比,但總括含量為在1%至5%的範圍。引發劑反應的光化能係產生自中壓水銀燈的寬頻紫外光能。依此方式,該引發劑有利於基體材料之成分的交聯和聚合。And comprising a weight ratio of the matrix material of about 3%, but the total content is in the range of 1% to 5%. The actinic energy of the initiator reaction produces broadband ultraviolet light energy from a medium pressure mercury lamp. In this way, the initiator facilitates crosslinking and polymerization of the components of the matrix material.
因而併入於此以供參考的美國專利案7,307,118中述及於模具36的表面58和連接層50之間製造一種示於第3和4圖的弱邊界層之薄層60。薄層60保留於該壓印材料被固化之後。因此,模具36和連接層50之間具有最小的黏著力。就此目的,壓印材料較佳為利用包含一或數種例如上述基體壓印材料以及含有低表面能基之稱為表面活性劑成分的組成物。A thin layer 60 of the weak boundary layer shown in Figures 3 and 4 is thus fabricated between the surface 58 of the mold 36 and the tie layer 50 as described in U.S. Patent No. 7,307,118, the disclosure of which is incorporated herein by reference. The thin layer 60 remains after the imprint material has been cured. Therefore, there is minimal adhesion between the mold 36 and the tie layer 50. For this purpose, the embossing material preferably utilizes a composition comprising one or more substrate imprinting materials such as the above-described substrate and a surfactant component having a low surface energy group.
參考第5圖,沈積壓印材料之後,在一段時間後該表面活性劑成分凸起至氣液界面而形成具有分開材料濃度之壓印材料的液滴146。在第一部分,液滴146含有一較高濃度的表面活性劑成分稱為富含表面活性劑成分(SCR)次分段136,然後該第二部分稱為缺乏表面活性劑成分(SCD)次分段137。SCD次分段137被置於表面44和SCR次分段136之間。SCR次分段136可在壓印材料被固化之後減弱模具36和壓印材料之間的黏著力。明確而言,該表面活性劑成分具有相反端。當該壓印材料在可聚合的液相時其一相反端對含於壓印材料內的基體材料具有親和力。其餘端則具有氟成分。Referring to Figure 5, after depositing the embossed material, the surfactant component is raised to the gas-liquid interface after a period of time to form droplets 146 having embossed materials of separate material concentrations. In the first part, the droplet 146 contains a higher concentration of surfactant component called a surfactant-rich component (SCR) sub-segment 136, which is then referred to as a surfactant-deficient component (SCD) sub-point. Paragraph 137. The SCD sub-segment 137 is placed between the surface 44 and the SCR sub-segment 136. The SCR sub-segment 136 can reduce the adhesion between the mold 36 and the imprint material after the imprint material is cured. Specifically, the surfactant component has opposite ends. When the imprinted material is in the polymerizable liquid phase, its opposite end has an affinity for the matrix material contained in the imprint material. The remaining ends have a fluorine component.
參考第4和5圖,由於對基體材料的親和力,該表面活性劑成分被定向而使該氟成分延伸自該壓印材料和周圍環境空氣所定義的氣液界面。Referring to Figures 4 and 5, due to the affinity for the matrix material, the surfactant component is oriented such that the fluorine component extends from the gas-liquid interface defined by the imprint material and ambient air.
當壓印材料被固化時,壓印材料的第一部分產生一薄層60及壓印材料的第二部分被固化,即如連接層50所示的聚合材料。薄層60係被置於連接層50和模具36之間。薄層60的產生係由於存在和放置氟成分於SCR次分段136內之故。薄層60可避免模具36和連接層50之間產生過強的黏著力。明確而言,連接層50具有第一和第二的相反邊62和64。邊62以第一黏著力黏附至模具36。邊64則以第二黏著力黏附至基板42。薄層60所產生的第一黏著力較低於第二黏著力。因此,可輕易地從連接層50撕除模具36而同時不會導致變形及/或減少與模具36分開所需的力量。具有邊62的連接層50雖然被圖案化,但是應瞭解該邊62若非平坦但仍然保持平滑狀態。When the imprint material is cured, the first portion of the imprint material creates a thin layer 60 and the second portion of the imprint material is cured, i.e., the polymeric material as shown in tie layer 50. A thin layer 60 is placed between the tie layer 50 and the mold 36. The thin layer 60 is produced due to the presence and placement of fluorine components within the SCR sub-segment 136. The thin layer 60 prevents excessive adhesion between the mold 36 and the tie layer 50. In particular, the tie layer 50 has first and second opposing sides 62 and 64. The edge 62 is adhered to the mold 36 with a first adhesive force. The edge 64 is adhered to the substrate 42 with a second adhesive force. The first adhesive force produced by the thin layer 60 is lower than the second adhesive force. Thus, the mold 36 can be easily removed from the tie layer 50 while not causing deformation and/or reducing the force required to separate from the mold 36. Although the connection layer 50 having the side 62 is patterned, it should be understood that the side 62 remains smooth even if it is not flat.
再者,若需要時,其可形成被置於連接層50和基板42之間的薄層60。此可藉由將壓印材料塗佈至模具36然後再以模具36上的壓印材料接觸基板42而完成。依此方式,該連接層50將被置於薄層60和基體例如被沈積聚合材料之模具36或基板42之間。應瞭解若利用旋塗法沈積該壓印材料時如具有SCR次分段236及第二和SCD次分段237之第6圖所示將發生類似的分開材料濃度。分開濃度的所需時間視許多因素而定,包括組成物內分子的大小以及組成物的黏度。黏度低於20cp時達到上述分開的組成物僅需數秒鐘。然而,若材料黏度為數百cP時可能需要數秒至數分鐘之久。Further, if desired, it can form a thin layer 60 that is placed between the tie layer 50 and the substrate 42. This can be accomplished by applying an embossing material to the mold 36 and then contacting the substrate 42 with an embossing material on the mold 36. In this manner, the tie layer 50 will be placed between the thin layer 60 and the substrate, such as the mold 36 or substrate 42 from which the polymeric material is deposited. It will be appreciated that similar separation material concentrations will occur if the imprint material is deposited by spin coating as shown in Figure 6 with SCR sub-segment 236 and second and SCD sub-segment 237. The time required to separate the concentrations depends on a number of factors, including the size of the molecules within the composition and the viscosity of the composition. It takes only a few seconds to reach the above separate composition when the viscosity is lower than 20 cp. However, if the material viscosity is several hundred cP, it may take several seconds to several minutes.
然而,已發現薄層60可能不均勻。薄層60的一些區域可能較他區為薄,以及在一些極端的例子中,極小比例的模板表面可能失去薄層60而使模板36直接接觸連接層50。較薄薄層60及失去薄層60的區域可能造成連接層50從基板42的變形及/或結構剝離。明確而言,在分離模具36時連接層50必需施予分離力(FS)。分離力(FS)係來自對模具36的拉力(FP)和連接層50和模具36之間被薄層60所降低的黏合力例如凡德瓦爾力。由於存在薄層60,連接層50和基板42之間的分離力(FS)一般較低於黏合力(FA)。然而,若減少或失去薄層60時,局部分離力(FS)可能接近局部黏合力(FA)。局部受力意指存在一已知薄層60區域的受力,其在此實例中為接近薄層60之薄區域或實質上無薄層60之區域的局部受力。此將導致連接層50從基板42的變形及/或剝離。However, it has been found that the thin layer 60 may be uneven. Some regions of the thin layer 60 may be thinner than other regions, and in some extreme instances, a very small proportion of the template surface may lose the thin layer 60 such that the template 36 directly contacts the tie layer 50. The thinner layer 60 and the area where the thin layer 60 is lost may cause deformation and/or structural peeling of the connection layer 50 from the substrate 42. Specifically, the separation layer 50 must be subjected to a separation force (FS) when the mold 36 is separated. The separation force (FS) is derived from the tensile force (FP) to the mold 36 and the adhesion between the tie layer 50 and the mold 36 by the thin layer 60, such as the van der Waals force. Due to the presence of the thin layer 60, the separation force (FS) between the tie layer 50 and the substrate 42 is generally lower than the adhesion force (FA). However, if the thin layer 60 is reduced or lost, the local separation force (FS) may approach the local adhesion (FA). Locally stressed means the presence of a force in the region of a known thin layer 60, which in this example is a localized force near a thin region of the thin layer 60 or a region substantially free of the thin layer 60. This will result in deformation and/or peeling of the tie layer 50 from the substrate 42.
參考第7圖,在底層45的存在下,由於出現兩種界面66和68而使情況更為複雜。底層45和連接層50之間的第一界面66存在第一黏合力(F1)。底層45和晶圓47之間的第二界面68則存在第二黏合力(F2)。分離力(FS)較佳為小於黏合力F1和F2。然而,由於上述討論之薄層60的厚度上差異或缺失,分離力(FS)可能類似或接近其一或二者的黏合力F1和F2。此將導致連接層50從底層45、底層45從晶圓47或二者的剝離。Referring to Figure 7, in the presence of the bottom layer 45, the situation is further complicated by the presence of two interfaces 66 and 68. The first interface 66 between the bottom layer 45 and the tie layer 50 has a first adhesive force (F1). The second interface 68 between the bottom layer 45 and the wafer 47 has a second adhesion (F2). The separation force (FS) is preferably smaller than the adhesion forces F1 and F2. However, due to differences or lacks in thickness of the thin layer 60 discussed above, the separation force (FS) may be similar or close to the adhesion forces F1 and F2 of one or both. This will result in the peeling of the tie layer 50 from the bottom layer 45, the bottom layer 45 from the wafer 47, or both.
本發明藉由可增加第一和第二界面之第一F1和第二F2黏合力而使其分別較大於薄層波動分離力(FS)的材料形成底層45而減少或避免上述剝離的問題。就此目的,底層45和連接層50之間的界面66以及底層45和晶圓47之間的界面68利用具有強鍵結的組成物形成底層45。在本發明的實例中,底層45和連接層50間之第一界面66的黏著力係來自共價鍵,即存在於形成底層45之組戍物與形成連接層50之組成物間的共價鍵。底層45和晶圓47之間的黏著力可藉由任一不同的機制而達成。這些機制包括於形成底層45之組成物與形成晶圓47之材料間產生共價鍵。或者,或除了共價鍵之外,於形成底層45之組成物與形成晶圓47之材料間另外形成離子鍵。或者,或除了共價鍵及/或離子鍵或二者之外,於形成底層45之組成物與形成晶圓47之材料間藉由凡德瓦爾力產生黏合力。The present invention reduces or avoids the problem of peeling by forming the bottom layer 45 by adding the first F1 and the second F2 bonding forces of the first and second interfaces to a material which is larger than the thin layer wave separation force (FS), respectively. For this purpose, the interface 66 between the bottom layer 45 and the tie layer 50 and the interface 68 between the bottom layer 45 and the wafer 47 form the bottom layer 45 using a composition having a strong bond. In the example of the present invention, the adhesion of the first interface 66 between the bottom layer 45 and the tie layer 50 is derived from a covalent bond, i.e., covalently present between the group of articles forming the bottom layer 45 and the composition forming the tie layer 50. key. The adhesion between the bottom layer 45 and the wafer 47 can be achieved by any of a variety of different mechanisms. These mechanisms include creating a covalent bond between the composition forming the bottom layer 45 and the material forming the wafer 47. Alternatively, or in addition to the covalent bond, an ionic bond is additionally formed between the composition forming the underlayer 45 and the material forming the wafer 47. Alternatively, or in addition to the covalent bond and/or the ionic bond or both, the adhesion is generated by the van der Waals force between the composition forming the underlayer 45 and the material forming the wafer 47.
此可藉由利用含多功能反應性化合物之組成物形成底層45而達成,即該化合物通常含有二或多種以下式為代表的官能基:This can be achieved by forming a bottom layer 45 using a composition comprising a multifunctional reactive compound, i.e., the compound typically contains two or more functional groups represented by the following formula:
其R、R’、R”和R’’’為聯結基以及x、y、z為其相關基的平均重複數。這些重複單位可能為隨機分佈。X和X’表示該官能基,通常已知官能基X不同於官能基X’。所選擇的其一X和X’官能基,例如X’能藉由形成共價鍵、離子鍵及/或凡德瓦爾力與基板42的材料交叉反應。Its R, R', R" and R''' are the linking groups and the average number of repetitions of x, y, z as their related groups. These repeating units may be randomly distributed. X and X' represent the functional group, usually The functional group X is different from the functional group X'. The selected X and X' functional groups, such as X', can cross-react with the material of the substrate 42 by forming covalent bonds, ionic bonds and/or van der Waals forces. .
所選擇X和X’的另外一官能基,例如X能與形成基板42的材料之間產生共價鍵。X基的官能性可在連接層50的聚合期間發生交叉反應。因此,視形成連接層50之材料的特性選擇官能基X,官能基X較佳為能與形成連接層50之組成物的官能基反應。例如,連接層50若形成自丙烯酸單體時,X可能包含丙烯酸、乙烯醚及/或烷氧官能基,及/或可與連接層50內丙烯酸基共聚合的官能基。因此,X官能基在紫外線光化能之下產生交叉反應。Another functional group selected for X and X', such as X, can create a covalent bond with the material forming substrate 42. The X-based functionality can cross-react during the polymerization of the tie layer 50. Therefore, the functional group X is selected depending on the characteristics of the material forming the connection layer 50, and the functional group X is preferably reactive with the functional group forming the composition of the connection layer 50. For example, if the tie layer 50 is formed from an acrylic monomer, X may comprise an acrylic acid, a vinyl ether, and/or an alkoxy functional group, and/or a functional group copolymerizable with the acrylic group in the tie layer 50. Thus, the X functional group produces a cross-reaction under ultraviolet light actinic energy.
官能基X’亦可參與底層45的交聯和聚合反應。通常,X’官能基易於與不同於X官能基之交叉反應的光化能產生聚合及交聯反應。本實例中的X’官能基在暴露熱能之下易於與底層45內分子產生交聯反應。通常,經由三種機制選擇易於與基板42產生交叉反應的官能基X’:(1)直接與形成基板42之材料產生反應;(2)與基板42交聯反應之具有一聯結官能基的交聯分子產生反應;以及(3)聚合及交聯底層45而形成可連接連接層50和基板42之間足夠長度的分子鏈。The functional group X' may also participate in the crosslinking and polymerization of the underlayer 45. In general, the X' functional group readily undergoes polymerization and cross-linking reactions with actinic energy that is cross-reactive with the X functional group. The X' functional group in this example readily crosslinks with the molecules in the underlayer 45 under exposure to thermal energy. Generally, the functional group X' which is liable to cross-react with the substrate 42 is selected via three mechanisms: (1) directly reacting with the material forming the substrate 42; (2) cross-linking with a bonding functional group in cross-linking reaction with the substrate 42 The molecules generate a reaction; and (3) polymerize and crosslink the underlayer 45 to form a molecular chain of sufficient length to connect the tie layer 50 to the substrate 42.
參考第7和8圖,存在連接層50時可被用於形成底層45的一舉例性多官能反應化合物係形成自基體材料包括供應自喬治亞州Smyrna市UCB化學公司之商品β-CEA的β-羧乙基丙烯酸酯。β-CEA係一種具有下列構造式的脂族化合物:Referring to Figures 7 and 8, an exemplary polyfunctional compound which can be used to form the bottom layer 45 in the presence of the tie layer 50 is formed from a matrix material including beta-CEA supplied by UCB Chemical Company of Smyrna, Ga. Carboxyethyl acrylate. β-CEA is an aliphatic compound having the following structural formula:
該X’官能基70具有羧基官能性。該X官能基72具有丙烯酸官能性。官能基70和72被偶合至化合物主鏈74的相反端。The X' functional group 70 has a carboxyl functionality. The X functional group 72 has acrylic functionality. Functional groups 70 and 72 are coupled to opposite ends of compound backbone 74.
參考第7和9圖,存在連接層50時可被用於形成底層45的另一種多官能反應化合物係形成自基體材料包括供應自喬治亞州Smyrna市UCB化學公司商品3605之具有下列構造式的芳族雙苯基化合物:Referring to Figures 7 and 9, another polyfunctional compound which can be used to form the bottom layer 45 in the presence of the tie layer 50 is formed from a base material including those supplied by UCB Chemical Company, Smyrna, GA. An aromatic bisphenyl compound of the formula 3605 having the following formula:
該X’官能基76具有環氧基官能性。該X官能基78具有丙烯酸官能性。官能基76和78被偶合至化合物主鏈80的相反端。The X' functional group 76 has an epoxy functional group. The X functional group 78 has acrylic functionality. Functional groups 76 and 78 are coupled to opposite ends of compound backbone 80.
參考第7和10圖,存在連接層50時可被用於形成底層45的另一種多官能反應化合物係形成自基體材料包括紐約Schenectady市Schenectady國際公司之商品501的芳族化合物。該X’官能基82具有羧基官能性。該X官能基84具有丙烯酸官能性。官能基82和84被偶合至化合物主鏈86的相反端。Referring to Figures 7 and 10, another polyfunctional compound which can be used to form the bottom layer 45 in the presence of the tie layer 50 is formed from a base material including the Schenectady International Company of Schenectady, New York. 501 aromatic compound. The X' functional group 82 has a carboxyl functionality. The X functional group 84 has acrylic functionality. Functional groups 82 and 84 are coupled to opposite ends of compound backbone 86.
視合成方法,501具有下列所示的構造A或B,或類似的構造。Depending on the method of synthesis, 501 has the configuration A or B shown below, or a similar configuration.
在構造A和B中,x和y為表示重複單位數的整數。該重複單位可為隨機分佈。In configurations A and B, x and y are integers representing the number of repeating units. The repeating unit can be a random distribution.
可由下列所示甲酚環氧酚醛製成構造A和B,其為能使x+y=n之從包含8至11之範圍的重複單位。因此,構造A和B的分子量為在約2,000至約4,000道耳頓的範圍。Structures A and B can be made from the cresol epoxy phenolic shown below, which is a repeating unit that can range from x to y = n from 8 to 11. Thus, the molecular weights of constructs A and B range from about 2,000 to about 4,000 Daltons.
構造A和B的高分子量可增加黏著層的機械強度。利用約0.14奈米的通用碳-碳鍵長度,該構造A和B和聚合主鏈若以直線延伸時可至約2奈米至約4奈米的範圍。The high molecular weight of the constructs A and B increases the mechanical strength of the adhesive layer. With a universal carbon-carbon bond length of about 0.14 nanometers, the configurations A and B and the polymeric backbone can range from about 2 nanometers to about 4 nanometers when extended in a straight line.
參考第7和11圖,除了與連接層50交叉反應之外,官能基X在固化期間能產生有利於連接層50之組成物聚合的自由基。因此,當暴露於光化能例如寬頻紫外光能時官能基X將有利於連接層50的聚合作用。包括這些性質的一種舉例性多官能反應化合物係一種供應自紐約Tarrytown市Ciba專業化學公司商品2959之具有下列構造式的光引發劑:Referring to Figures 7 and 11, in addition to cross-reacting with the tie layer 50, the functional group X can generate free radicals which facilitate polymerization of the composition of the tie layer 50 during curing. Thus, the functional group X will facilitate the polymerization of the tie layer 50 when exposed to actinic energy such as broadband ultraviolet light energy. An exemplary polyfunctional compound comprising these properties is a product supplied by Ciba Specialty Chemicals, Tarrytown, New York. Photoinitiator of 2959 having the following formula:
該X’官能基90具有羧基官能性。該X官能基92具有引發劑型官能性。明確而言,該官能基X在暴露於寬頻紫外光能時能進行α-裂解而產生苯甲醯基型自由基。該自由基有利於形成連接層50之組成物的自由基聚合反應。官能基90和92被偶合至化合物主鏈94的相反端。The X' functional group 90 has a carboxyl functionality. The X functional group 92 has an initiator type functionality. Specifically, the functional group X can undergo alpha-cleavage upon exposure to broadband ultraviolet light energy to produce a benzamidine-type radical. This radical facilitates the formation of a radical polymerization reaction of the composition of the tie layer 50. Functional groups 90 and 92 are coupled to opposite ends of compound backbone 94.
已形成許多包括上述多官能反應化合物的組成物以測定界面66和68的黏合強度。下列為包括多官能反應化合物的一舉例性組成物:A number of compositions comprising the above polyfunctional reaction compounds have been formed to determine the bond strength of interfaces 66 and 68. The following are exemplary compositions including polyfunctional compounds:
組成物1Composition 1
β-CEAβ-CEA
DUV30J-16DUV30J-16
組成物1內含有約100克的DUV30J-16及約0.219克的β-CEA。DUV30J-16係一種供應自密蘇里州Rolla市Brewer科學公司之含93%溶劑和7%非溶劑反應成分的底部抗反射塗層(BARC)。DUV30J-16含有酚醛樹脂,及其交聯劑可正羧酸官能基反應。已認為DUV30J-16將不與連接層50形成共價鍵。Composition 1 contained about 100 grams of DUV 30J-16 and about 0.219 grams of beta-CEA. DUV30J-16 is a bottom anti-reflective coating (BARC) supplied with 93% solvent and 7% non-solvent reactive components from Brewer Scientific, Rolla, Missouri. DUV30J-16 contains a phenolic resin, and its crosslinker can react with a normal carboxylic acid functional group. It is believed that DUV 30J-16 will not form a covalent bond with tie layer 50.
在另一種組成物中,β-CEA被一交聯劑、一催化劑和501所取代。兩種交聯劑和催化劑均售自新澤西州West Patterson市的Cytec工業公司。該交聯劑的市售商品名稱為303ULF。303ULF的一種成分為六甲氧基甲基密胺(HMMM)。HMMM的甲氧官能基能參與許多縮合反應。該催化劑為具有下列組成物的市售商品4040:In another composition, β-CEA is a crosslinker, a catalyst, and Replaced by 501. Both crosslinkers and catalysts were sold from Cytec Industries, Inc., West Patterson, New Jersey. The commercial name of the cross-linking agent is 303ULF. One component of 303ULF is hexamethoxymethyl melamine (HMMM). The methoxy functional group of HMMM can participate in many condensation reactions. The catalyst is a commercially available product having the following composition 4040:
組成物2Composition 2
DUV30J-16DUV30J-16
501 501
303ULF 303ULF
4040 4040
組成物2內含有約100克的DUV30J-16、0.611克的501、0.175克的303ULF和0.008克的4040。Composition 2 contains about 100 grams of DUV 30J-16, 0.611 grams. 501, 0.175 grams 303ULF and 0.008g 4040.
可被用作為多官能反應化合物的另一種組成物中缺少DUV30J-16。該組成物如下:DUV30J-16 is absent from another composition that can be used as a polyfunctional compound. The composition is as follows:
組成物3Composition 3
501 501
303ULF 303ULF
4040 4040
PM醋酸鹽PM acetate
組成物內含有約77克的501、22克的303ULF和1克的4040。混合501、303ULF和4040。然後將501、303ULF和4040的混合物引入約1900克的PM醋酸鹽。PM醋酸鹽係田納西州Kingsport市Eastman化學公司出售之由2-(1-甲氧基)醋酸乙酯所構成溶劑的產品名稱。The composition contains about 77 grams 501, 22 grams 303ULF and 1 gram 4040. mixing 501 303ULF and 4040. followed by 501 303ULF and A mixture of 4040 introduced about 1900 grams of PM acetate. PM acetate is the product name of a solvent consisting of ethyl 2-(1-methoxy)acetate sold by Eastman Chemical Company of Kingsport, Tennessee.
類似組成物3,組成物4含有約85.2克501、13.8克303ULF和1克4040的混合物。然後將501、303ULF和4040的混合物引入約1900克的PM醋酸鹽。Like composition 3, composition 4 contains about 85.2 grams. 501, 13.8 grams 303ULF and 1 gram A mixture of 4040. followed by 501 303ULF and A mixture of 4040 introduced about 1900 grams of PM acetate.
類似組成物3,組成物5含有約81克的501、18克的303ULF和1克的4040。混合501、303ULF和4040。然後將501、303ULF和4040的混合物引入約1900克的PM醋酸鹽。Like composition 3, composition 5 contains about 81 grams. 501, 18 grams 303ULF and 1 gram 4040. mixing 501 303ULF and 4040. followed by 501 303ULF and A mixture of 4040 introduced about 1900 grams of PM acetate.
上述討論有關底層45之組成物1~5的五種組成物利用旋塗法分別被沈積於基板42上,其中以每分鐘500至4,000轉的轉速轉動該基板而可形成一若非平坦但仍具有均勻厚度的實質上平滑底層。接著將該組成物於180℃(攝氏)的熱光化能暴露約2分鐘。The five compositions discussed above with respect to the compositions 1 to 5 of the underlayer 45 are respectively deposited on the substrate 42 by spin coating, wherein the substrate is rotated at a rotational speed of 500 to 4,000 revolutions per minute to form a non-flat but still have A substantially smooth bottom layer of uniform thickness. The composition was then exposed to thermo-optic energy at 180 ° C (Celsius) for about 2 minutes.
利用組成物1~5的上述五種組成物和基體材料所產生界面66和68之黏著力強度與完全形成自未知是否從基體材料與連接層50形成共價鍵之DUV30J-16底層45的基線測量比較資料。就此目的,沈積形成自基體壓印材料的連接層50以及形成自組成物1~5和基線組成物的底層45然後固化於兩個載玻片之間(未顯示)。各載玻片(未顯示)的厚度為約1毫米,橫向尺寸為75x25毫米。The adhesion strength of the interfaces 66 and 68 produced by the above five compositions and the matrix materials of the compositions 1 to 5 is completely different from the baseline of the DUV 30J-16 underlayer 45 which is formed from the base material and the connection layer 50 to form a covalent bond. Measure comparison data. For this purpose, the tie layer 50 formed from the base imprint material and the bottom layer 45 formed from the compositions 1 to 5 and the baseline composition are deposited and then cured between the two slides (not shown). Each slide (not shown) has a thickness of about 1 mm and a lateral dimension of 75 x 25 mm.
在沈積底層45和連接層50之前先清潔該載玻片(未顯示)。明確而言將各載玻片(未顯示)置入皮蘭哈(Piranha)溶液(H2 SO4 :H2 O2 =2.5:1體積比)。接著以去離子水洗滌該載玻片(未顯示),噴灑異丙醇,及在氮氣流下進行乾燥。之後,在120℃(攝氏)將該載玻片(未顯示)烘烤2小時。The slide (not shown) is cleaned prior to depositing the bottom layer 45 and the tie layer 50. Specifically, each slide (not shown) was placed in a Piranha solution (H 2 SO 4 :H 2 O 2 =2.5:1 by volume). The slides (not shown) were then washed with deionized water, sprayed with isopropanol, and dried under a stream of nitrogen. Thereafter, the slide (not shown) was baked at 120 ° C (Celsius) for 2 hours.
利用旋塗法以3000rpm轉速將底層45分沈積於該兩個載玻片(未顯示)。在180℃加熱板上將沈積於載玻片(未顯示)上的底層45加熱2小時。換言之,藉由暴露於熱能之下分別將組成物1~5和基線組成物固化,即聚合及交聯。利用上述的點滴分佈法形成連接層。明確而言,以複數個液滴將基體壓印材料置於兩個中其一載玻片的底層45上。藉由面對面兩個載玻片(未顯示)上的底層及接觸基體壓印材料的方法將該基體壓印材料夾於二底層45之間。通常為將其一載玻片(未顯示)的長軸垂直地延伸出另一載玻片(未顯示)的長軸。利用中壓汞UV燈在20毫瓦/平方米強度下照射40秒的方法藉由暴露該兩個載玻片(未顯示)於光化能例如寬頻紫外波長而固化該基體壓印材料,即聚合及交聯。The bottom layer 45 was deposited on the two slides (not shown) by spin coating at 3000 rpm. The bottom layer 45 deposited on a glass slide (not shown) was heated on a 180 ° C hot plate for 2 hours. In other words, the compositions 1 to 5 and the baseline composition are respectively cured, i.e., polymerized and crosslinked, by exposure to heat. The tie layer is formed by the above-described droplet distribution method. Specifically, the substrate imprint material is placed on the bottom layer 45 of one of the two slides in a plurality of droplets. The substrate imprint material is sandwiched between the two bottom layers 45 by facing the underlying layers on two slides (not shown) and contacting the substrate imprint material. Typically, the long axis of one of the slides (not shown) extends vertically out of the long axis of the other slide (not shown). The base imprint material is cured by exposing the two slides (not shown) to an actinic energy, such as a broadband ultraviolet wavelength, by irradiating the medium pressure mercury UV lamp at an intensity of 20 mW/m 2 for 40 seconds. Polymerization and crosslinking.
為測量該黏著強度,類似“壓印技術中模具和光固化樹脂間之黏著力的測量”日本應用物理期刊 第41卷(202)第4194~4197頁中所述採用四點彎曲夾具(未顯示)。以最大黏力/負荷作為其黏力值。頂和底部兩點的正橫距離為60毫米。以每分鐘0.5毫米的速度施予負荷。運用此試驗,可測定以基線組成物形成之底層45在6.1磅施力發生的剝離。在形成自組成物1之底層45開始剝離之前達到約6.5磅的分離力。在形成自組成物2之底層45開始剝離之前達到約9.1磅的分離力。形成自組成物3、4或5之底層45在發生剝離之前其一或二載玻片(未顯示)失效(破裂)。結果發現施予高至11磅的力量不會使其剝離。結果發現組成物3、4和5在具有不良薄區或全部缺失的薄層60中由於可有效阻止剝離而提供底層45極優良的操作特性。In order to measure the adhesion strength, a measurement of adhesion between a mold and a photocurable resin in an imprint technique is used. Four-point bending jig (not shown) is described in Japanese Journal of Applied Physics, Vol. 41 (202), pages 4194 to 4197. . The maximum viscosity/load is used as the viscosity value. The horizontal distance between the top and bottom points is 60 mm. The load was applied at a rate of 0.5 mm per minute. Using this test, the peeling of the bottom layer 45 formed from the baseline composition at 6.1 pounds of applied force can be determined. A separation force of about 6.5 pounds is reached before the formation of the bottom layer 45 from the composition 1 begins to peel off. A separation force of about 9.1 pounds was reached before the formation of the bottom layer 45 from the composition 2 began. The bottom layer 45 formed from the composition 3, 4 or 5 fails (broken) one or two slides (not shown) before peeling occurs. It was found that the application of force up to 11 pounds did not cause it to peel off. As a result, it was found that the compositions 3, 4 and 5 provided extremely excellent operational characteristics of the underlayer 45 in the thin layer 60 having a poor thin region or all of the defects because it was effective in preventing peeling.
組成物6為類似組成物5的一種低固體組成物其含有0.81克的501、0.18克的303ULF、0.01克的4040,和1999克的PM醋酸鹽。在一實例中,可將組成物6被澆注於晶圓上及旋壓形成薄膜。在旋壓法中,蒸發溶劑而在表面上形成固體薄膜。可調節組成物內溶解固體百分比及旋塗速度而在基板或晶圓上獲得所欲厚度的薄膜。在旋塗之後,藉由在150℃的加熱板上烘烤約1分鐘可固化該黏著層。Composition 6 is a low solid composition similar to composition 5 which contains 0.81 g 501, 0.18 grams 303ULF, 0.01g 4040, and 1999 grams of PM acetate. In one example, composition 6 can be cast onto a wafer and spun to form a film. In the spinning method, a solvent is evaporated to form a solid film on the surface. A film of the desired thickness can be obtained on a substrate or wafer by adjusting the percentage of dissolved solids in the composition and the spin speed. After spin coating, the adhesive layer was cured by baking on a hot plate at 150 ° C for about 1 minute.
第12A和12B說明8”矽晶圓以1000rpm轉速塗佈上述組成物6之聚合性黏著層厚度的測量位置1200。藉由供應自德州Austin市Metrosol公司之配備光學測量系統的光譜反射儀測定該樣本的固體膜厚度。第12A圖中顯示59個測量位置,所測得層平均厚度為1.09奈米,其最大測得厚度為1.22奈米、最小測得厚度為0.94奈米,及標準偏差為0.05奈米。第12B圖中顯示49個測量位置,利用VUV-7000型測得的層平均厚度為1.01奈米,其最大測得厚度為1.07奈米、最小測得厚度為0.95奈米,及標準偏差為0.03奈米。12A and 12B illustrate the measurement position 1200 of the thickness of the polymeric adhesive layer of the above composition 6 applied at 1000 rpm on an 8" wafer. The measurement was performed by a spectroscopic reflectometer equipped with an optical measuring system from Metrosol, Austin, Texas. The solid film thickness of the sample. In Figure 12A, 59 measurement positions are shown. The average thickness of the layer measured is 1.09 nm, the maximum measured thickness is 1.22 nm, the minimum measured thickness is 0.94 nm, and the standard deviation is 0.05 nm. In Figure 12B, 49 measurement positions are shown. The average thickness of the layer measured by VUV-7000 is 1.01 nm, the maximum measured thickness is 1.07 nm, and the minimum measured thickness is 0.95 nm. The standard deviation is 0.03 nm.
第13圖為矽晶圓1302上氧化矽表面和丙烯酸壓印光阻劑1304之間從組成物6形成之聚合性黏著層1300的一掃描電子顯微鏡(SEM)影像。聚合性黏著層1300的厚度為約1奈米。試驗顯示1奈米厚度的聚合性黏著層可達到接近一具有較厚(例如,大於約6奈米)類似組成物之聚合性黏著層相同的黏著強度。亦即,聚合性黏著層1300在模板分離時施予拉伸負荷不會造成黏著失效。Fig. 13 is a scanning electron microscope (SEM) image of the polymerizable adhesive layer 1300 formed from the composition 6 between the yttrium oxide surface on the tantalum wafer 1302 and the acrylic embossed photoresist 1304. The thickness of the polymerizable adhesive layer 1300 is about 1 nm. Tests have shown that a 1 nm thick polymeric adhesive layer can achieve the same adhesive strength as a polymeric adhesive layer having a relatively thick (e.g., greater than about 6 nm) similar composition. That is, the polymeric adhesive layer 1300 does not cause adhesive failure when the tensile load is applied during the separation of the template.
意外地,旋塗含具有延長主鏈長度大於約2奈米(例如,在約2至約4奈米的範圍內)之聚合成分的聚合性黏著層組成物已顯示可形成具有厚度小於約2奈米(例如,約1奈米)的聚合性黏著層。已認為該聚合成分在旋塗時被排列而使聚合成分的主鏈“平臥”(或接近平行)於基板表面而非“站立”(或接近垂直)於基板表面。已認為依此方式排列於基板表面的聚合成分在基板表面上通常係以聚合成分較長尺寸沿著基板表面延伸而具有平面的構造以及能於基板上形成一超薄層。已證明此超薄聚合性黏著層具有比一般較厚黏著層更強的黏合強度而可減小用於奈米壓印微影術中之壓印堆疊體的整體厚度。Surprisingly, spin coating a polymeric adhesive layer composition comprising a polymeric component having an extended backbone length greater than about 2 nanometers (e.g., in the range of from about 2 to about 4 nanometers) has been shown to be formed to have a thickness of less than about 2 A polymerizable adhesive layer of nanometer (for example, about 1 nm). The polymeric components are believed to be aligned during spin coating such that the backbone of the polymeric component is "flat" (or nearly parallel) to the surface of the substrate rather than "standing" (or nearly perpendicular) to the surface of the substrate. It has been considered that the polymer component arranged on the surface of the substrate in this manner is generally formed on the surface of the substrate with a long dimension of the polymer component extending along the surface of the substrate to have a planar configuration and to form an ultra-thin layer on the substrate. This ultra-thin polymeric adhesive layer has been shown to have a stronger bond strength than a generally thicker adhesive layer and to reduce the overall thickness of the embossed stack used in nanoimprint lithography.
上述本發明的具體實施例僅為舉例性。上述揭示可作出許多變化和改良而仍屬於本發明的範圍內。例如,主要使用PM醋酸鹽溶劑溶解組成物3、4和5的其他組成成分。因此,可使用許多常用的光阻劑溶劑代替PM醋酸鹽,例如二乙醇單乙醚醋酸鹽、甲基戊基甲酮等。此外,組成物3、4和5內之固形物,即501、303ULF和4040,含量可為組成物重量比的0.1%至70%之間,以及更佳為在0.5%至10%重量比的範圍內,其餘則為溶劑所構成。組成物3、4和5的各固體成分包含50%至99%重量比的501、1%至50%重量比的303ULF,和0%至10%重量比的4040。因此,本發明的範圍不應被限制於上述的說明,而是應根據申請專利範圍附錄及其相等物的全部範圍。The above specific embodiments of the invention are merely exemplary. Many variations and modifications can be made to the above disclosure without departing from the scope of the invention. For example, the PM acetate solvent is mainly used to dissolve the other constituents of the compositions 3, 4 and 5. Therefore, many conventional photoresist solvents can be used in place of PM acetate, such as diethanol monoethyl acetate, methyl amyl ketone, and the like. In addition, the solids in the compositions 3, 4 and 5, ie 501 303ULF and 4040, the content may be between 0.1% and 70% by weight of the composition, and more preferably in the range of 0.5% to 10% by weight, and the remainder is composed of a solvent. Each solid component of the compositions 3, 4, and 5 contains 50% to 99% by weight 501, 1% to 50% by weight 303ULF, and 0% to 10% by weight 4040. Therefore, the scope of the invention should not be construed as being limited by the foregoing description, but rather the full scope of the appended claims and their equivalents.
10...系統10. . . system
36...模具36. . . Mold
38...凹痕38. . . dent
40...凸出物40. . . Projection
42...基板42. . . Substrate
44...表面44. . . surface
45...底層45. . . Bottom layer
46...液滴46. . . Droplet
47...晶圓47. . . Wafer
50...連接層50. . . Connection layer
52...次分段52. . . Secondary segment
54...次分段54. . . Secondary segment
56...側邊56. . . Side
58...表面58. . . surface
60...薄層60. . . Thin layer
62...第一相反邊62. . . First opposite side
64...第二相反邊64. . . Second opposite side
66...第一界面66. . . First interface
68...第二界面68. . . Second interface
70...官能基70. . . Functional group
72...官能基72. . . Functional group
74...化合物主鏈74. . . Compound backbone
76...官能基76. . . Functional group
78...官能基78. . . Functional group
80...化合物主鏈80. . . Compound backbone
82...官能基82. . . Functional group
84...官能基84. . . Functional group
86...化合物主鏈86. . . Compound backbone
90...官能基90. . . Functional group
92...官能基92. . . Functional group
94...化合物主鏈94. . . Compound backbone
136...次分段136. . . Secondary segment
137...次分段137. . . Secondary segment
146...液滴146. . . Droplet
236...次分段236. . . Secondary segment
237...次分段237. . . Secondary segment
d...距離d. . . distance
t2...厚度T2. . . thickness
t1...厚度T1. . . thickness
第1圖為根據先前技術的一簡單平面圖;Figure 1 is a simplified plan view of the prior art;
第2圖為根據本發明置於一基板上之模板和壓印材料的一簡單立面圖;Figure 2 is a simplified elevational view of a stencil and embossing material placed on a substrate in accordance with the present invention;
第3圖為第2圖所示壓印材料已被圖案化及形成固化層之模板和基板的一簡單立面圖;Figure 3 is a simplified elevational view of the template and substrate of the imprinting material shown in Figure 2, which has been patterned and formed into a cured layer;
第4圖為接觸壓印材料而於固化壓印材料和模板間形成弱邊界層之模板的一剖面圖;Figure 4 is a cross-sectional view of a template for forming a weak boundary layer between a cured imprint material and a stencil in contact with an imprint material;
第5圖為第2圖所示壓印材料之液滴而顯示該液滴被分開而形成富含表面活性劑區和缺乏表面活性劑區的一詳細視圖;Figure 5 is a detailed view showing the droplets of the imprint material shown in Figure 2, the droplets being separated to form a surfactant-rich region and a surfactant-deficient region;
第6圖為利用旋塗法沈積壓印材料層而顯示該層被分開形成富含表面活性劑區和缺乏表面活性劑區的一詳細視圖;Figure 6 is a detailed view showing the deposition of the layer of imprinted material by spin coating to show that the layer is separated to form a surfactant-rich region and a surfactant-deficient region;
第7圖為接觸第5或6圖所示方法沈積於包括一底層的基板上之固化壓印材料模板的一剖面圖;Figure 7 is a cross-sectional view of a cured imprint material template deposited on a substrate comprising a bottom layer by contact with the method of Figure 5 or 6;
第8圖為可被用於形成一底層之組成物成分的化學構造式;Figure 8 is a chemical structural formula that can be used to form a composition of a bottom layer;
第9圖為可被用於形成一底層之組成物成分的化學構造式;Figure 9 is a chemical structural formula that can be used to form a composition of a bottom layer;
第10圖為可被用於形成一底層之組成物成分的化學構造式;Figure 10 is a chemical structural formula that can be used to form a composition of a bottom layer;
第11圖為可被用於形成一底層之組成物成分的化學構造式;Figure 11 is a chemical structural formula that can be used to form a composition of a bottom layer;
第12A和12B圖為用於測量聚合性黏著層厚度的測量位置;Figures 12A and 12B are measurement positions for measuring the thickness of the polymeric adhesive layer;
第13圖為塗佈聚合性黏著層之矽晶圓剖面的一掃描電子顯微照片影像。Figure 13 is a scanning electron micrograph image of a cross-section of a germanium wafer coated with a polymerizable adhesive layer.
36...模具36. . . Mold
38...凹痕38. . . dent
40...凸出物40. . . Projection
42...基板42. . . Substrate
44...表面44. . . surface
45...底層45. . . Bottom layer
46...液滴46. . . Droplet
47...晶圓47. . . Wafer
d...距離d. . . distance
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