TWI495077B - Multi-channel over-voltage protection device - Google Patents

Multi-channel over-voltage protection device Download PDF

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TWI495077B
TWI495077B TW101121457A TW101121457A TWI495077B TW I495077 B TWI495077 B TW I495077B TW 101121457 A TW101121457 A TW 101121457A TW 101121457 A TW101121457 A TW 101121457A TW I495077 B TWI495077 B TW I495077B
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conductive member
overvoltage protection
rectangle
variable impedance
insulating substrate
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TW101121457A
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TW201351606A (en
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Paoh Suan Chen
Tsung Han Lee
Tong Cheng Tsai
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Polytronics Technology Corp
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多埠式過電壓保護元件Multi-turn overvoltage protection component

本發明係關於一種過電壓保護元件,可提供靜電放電(electrostatic discharge;ESD)保護。本發明特別是關於一種多埠式過電壓保護元件。The present invention relates to an overvoltage protection component that provides electrostatic discharge (ESD) protection. More particularly, the present invention relates to a multi-turn overvoltage protection component.

積體電路接受外部之電源供應與待處理之輸入訊號,並輸出處理後之訊號。特而言之,由於積體電路之輸入端係直接連接於輸入級開關之閘極,因而相當容易受到損害。當積體電路藉由手動夾持或自動設備而焊接於電路板上時,易受損害之輸入端及輸出端即可能受到靜電放電而損害。例如,人體可經由靜電予以充電後再經由輸入端對半導體元件之積體電路進行放電。The integrated circuit accepts the external power supply and the input signal to be processed, and outputs the processed signal. In particular, since the input of the integrated circuit is directly connected to the gate of the input stage switch, it is quite susceptible to damage. When the integrated circuit is soldered to the board by manual clamping or automatic equipment, the susceptible input and output may be damaged by electrostatic discharge. For example, the human body can be charged by static electricity and then discharged to the integrated circuit of the semiconductor element via the input terminal.

自動組裝機台或測試機台之工具亦可能被充電後再經由積體電路之輸入端對半導體元件之積體電路進行放電。隨著半導體技術不斷演進,半導體元件之線寬亦隨之縮小,對抗靜電放電之保護機制的需求亦隨之顯現。積體電路元件大多配置ESD保護機制以避免過高之輸入電流,例如配置電阻元件於輸入端,藉以限制輸入電流。The tool of the automatic assembly machine or the test machine may also be charged and then discharged to the integrated circuit of the semiconductor element via the input terminal of the integrated circuit. As semiconductor technology continues to evolve, the line width of semiconductor components has also shrunk, and the need for protection against electrostatic discharge has also emerged. Most of the integrated circuit components are equipped with an ESD protection mechanism to avoid excessive input current, such as configuring a resistive component at the input terminal to limit the input current.

未來的電子產品,將朝著具有輕、薄、短、小的趨勢發展,以使得電子產品能更趨於迷你化。因此,若能將多顆過電壓或ESD保護元件整合至單一元件,不僅可因應電子產品小型化的需求,而且可有效降低製造成本。Future electronic products will develop toward a light, thin, short, and small trend, so that electronic products can be more miniaturized. Therefore, if multiple overvoltage or ESD protection components can be integrated into a single component, it can not only meet the demand for miniaturization of electronic products, but also effectively reduce manufacturing costs.

本發明提供一種多埠式過電壓保護元件,利用切割、雷射或微影蝕刻技術等圖案化設計的方式,將元件電極區分成複數個之獨立區域,以把單一元件區分成兩個或兩個以上的的電氣特性獨立區域。藉此,本發明之多埠式過電壓保護元件係能夠同時提供兩個或兩個以上迴路之過電壓保護功能。The invention provides a multi-turn type over-voltage protection component, which utilizes a patterning design such as cutting, laser or lithography etching technology to divide a component electrode into a plurality of independent regions to divide a single component into two or two More than one independent area of electrical characteristics. Thereby, the multi-turn overvoltage protection component of the present invention is capable of simultaneously providing overvoltage protection functions of two or more loops.

根據本發明之一實施例,一多埠式過電壓保護元件包括絕緣基板、複數個第一導電構件、至少一第二導電構件及至少一可變阻抗材料。複數個第一導電構件係設置於該絕緣基板之一表面,作為輸入電極端。第二導電構件設置於該絕緣基板之該表面,且與鄰近之該第一導電構件間形成至少一間隔。該第二導電構件係作為接地電極端。可變阻抗材料係形成於該間隔中,使得多埠式過電壓保護元件具有在低施加電壓時呈現高電阻並在高施加電壓時則呈現低電阻之電氣特性。According to an embodiment of the invention, a multi-turn overvoltage protection component includes an insulating substrate, a plurality of first conductive members, at least one second conductive member, and at least one variable impedance material. A plurality of first conductive members are disposed on one surface of the insulating substrate as an input electrode terminal. The second conductive member is disposed on the surface of the insulating substrate and forms at least one interval from the adjacent first conductive member. The second conductive member serves as a ground electrode terminal. A variable impedance material is formed in the space such that the multi-turn overvoltage protection element has an electrical characteristic that exhibits high resistance at low applied voltage and low resistance at high applied voltage.

本發明之多埠式過電壓保護元件的結構設計,可以實施在0603規格,甚至更小的尺寸。因此本發明之過電壓保護元件可以用0603的單顆成本,創造更高(例如4顆)的單位賣價,更可達到客戶縮小零件尺寸的需求。The structural design of the multi-turn overvoltage protection component of the present invention can be implemented in the 0603 size or even a smaller size. Therefore, the overvoltage protection component of the present invention can use a single cost of 0603 to create a higher (for example, four) unit selling price, and can also meet the customer's need to reduce the size of the part.

一實施例中,本發明之可變阻抗材料包含高導電磁粉末及絕緣黏結物,其中高導電磁粉末可降低元件的觸發電壓,並且在低施加電壓狀態呈現高電阻特性而在高施加電壓狀態則呈現低電阻特性。高導電磁粉末之含量可為可變阻抗材料重量之10%至90%之間。高導電磁粉末可包括羰基金屬之粉末(例如羰基鐵粉或羰基鎳粉),其不僅能抑制過電壓,且能耗散暫態電流。使用羰基金屬之高導電磁性之金屬粉末不僅能降低元件之觸發電壓,而且其高導電磁特性也能吸收部份會造成訊號失真和資料錯誤之電磁輻射。絕緣黏結物之含量可介於該可變阻抗材料重量之10%至90%之間。絕緣粉末可包含金屬氧化物,例如氧化鋁或氧化鋯。In one embodiment, the variable impedance material of the present invention comprises a highly conductive magnetic powder and an insulating adhesive, wherein the highly conductive magnetic powder reduces the trigger voltage of the element and exhibits a high resistance characteristic at a low applied voltage state and a high applied voltage state. It exhibits low resistance characteristics. The content of the highly conductive magnetic powder may be between 10% and 90% by weight of the variable impedance material. The highly conductive magnetic powder may include a powder of a metal carbonyl (for example, carbonyl iron powder or nickel carbonyl powder) which not only suppresses an overvoltage but also dissipates a transient current. The use of a highly conductive magnetic metal powder of a metal carbonyl metal not only reduces the trigger voltage of the component, but also its high conductive magnetic properties can absorb some of the electromagnetic radiation that causes signal distortion and data errors. The insulating binder may be present in an amount between 10% and 90% by weight of the variable impedance material. The insulating powder may comprise a metal oxide such as alumina or zirconia.

該可變阻抗材料在低施加電壓狀態呈現高電阻特性,但在高施加電壓狀態則呈現低電阻特性。藉由將該可變阻抗材料設置於前述過電壓保護元件之間隙中,該過電壓保護元件之整體即具有在低施加電壓時呈現高電阻並在高施加電壓時則呈現低 電阻之電氣特性。The variable impedance material exhibits a high resistance characteristic in a low applied voltage state, but exhibits a low resistance characteristic in a high applied voltage state. By providing the variable impedance material in the gap of the overvoltage protection component, the overvoltage protection component has a high resistance at a low applied voltage and a low voltage at a high applied voltage. Electrical characteristics of the resistor.

為讓本發明之上述和其他技術內容、特徵和優點能更明顯易懂,下文特舉出相關實施例,並配合所附圖式,作詳細說明如下:為讓本發明之上述和其他技術內容、特徵和優點能更明顯易懂,下文特舉出相關實施例,並配合所附圖式,作詳細說明如下:圖1及圖2係本發明第一實施例之多埠式過電壓保護元件示意圖。圖1係過電壓保護元件上視圖,圖2則是圖1中沿1-1剖面線之剖視圖。過電壓保護元件10包含絕緣基板11、電極結構12及可變阻抗材料13。一實施例中,絕緣基板11可為例如玻纖強化樹脂(FR4)基板。電極結構12係形成於絕緣基板11之一表面14上。電極結構12包含第一導電構件121(本實施例為4個)及第二導電構件122(本實施例為2個)。第二導電構件122與鄰近之第一導電構件121間形成間隔15。一實施例中,間隔15小於等於0.1mm,特別是小於等於0.08mm、0.05mm或0.03mm。可變阻抗材料13係形成於該間隔15中,提供在低施加電壓時呈現高電阻並在高施加電壓時則呈現低電阻之電氣特性。第一導電構件 121係作為輸入電極端,第二導電構件122係作為接地電極端。The above and other technical contents, features, and advantages of the present invention will become more apparent and understood from the description of the accompanying claims. The features, advantages and advantages of the present invention are described in more detail below with reference to the accompanying drawings. FIG. 1 and FIG. 2 are the multi-turn overvoltage protection components of the first embodiment of the present invention. schematic diagram. 1 is a top view of the overvoltage protection component, and FIG. 2 is a cross-sectional view taken along line 1-1 of FIG. The overvoltage protection element 10 includes an insulating substrate 11, an electrode structure 12, and a variable impedance material 13. In an embodiment, the insulating substrate 11 may be, for example, a glass fiber reinforced resin (FR4) substrate. The electrode structure 12 is formed on one surface 14 of the insulating substrate 11. The electrode structure 12 includes first conductive members 121 (four in the present embodiment) and second conductive members 122 (two in the present embodiment). The second conductive member 122 forms a space 15 with the adjacent first conductive member 121. In one embodiment, the spacing 15 is less than or equal to 0.1 mm, particularly less than or equal to 0.08 mm, 0.05 mm, or 0.03 mm. A variable impedance material 13 is formed in the space 15 to provide electrical characteristics that exhibit high resistance at low applied voltages and low resistance at high applied voltages. First conductive member 121 is used as the input electrode terminal, and the second conductive member 122 is used as the ground electrode terminal.

本實施例中,絕緣基板11約成矩形。第一導電構件121係形成於該矩形的4個轉角處,第二導電構件122形成於該矩形的兩長邊中央部分,從而形成包含4個輸入電極端及2個接地電極端之電極結構12。各第二導電構件122係作為兩側第一導電構件121之共同接地電極端。In this embodiment, the insulating substrate 11 is approximately rectangular. The first conductive member 121 is formed at four corners of the rectangle, and the second conductive member 122 is formed at a central portion of the two long sides of the rectangle to form an electrode structure 12 including four input electrode ends and two ground electrode ends. . Each of the second conductive members 122 serves as a common ground electrode end of the first conductive members 121 on both sides.

特而言之,為便於外接電路,本實施例中矩形的轉角處形成弧形斜角,且矩形之長邊中央部分形成類似半圓形的凹口。In particular, in order to facilitate the external circuit, in the embodiment, a rectangular bevel is formed at a corner of the rectangle, and a central portion of the long side of the rectangle forms a notch similar to a semicircle.

圖3係本發明第二實施例之多埠式過電壓保護元件上視示意圖。過電壓保護元件30包含絕緣基板31、電極結構32及可變阻抗材料33。絕緣基板31約成矩形,電極結構32中之第一導電構件321係形成於該矩形的4個轉角處及矩形之一長邊中央部分;第二導電構件322形成於該矩形的另一長邊中央部分,從而形成包含5個輸入電極端及1個接地電極端之電極結構32。第二導電構件322包含朝向該第一導電構件321之複數個放射狀延伸部324。第二導電構件322與鄰近之第一導電構件321間形成間隔35,可變阻抗材料33係形成於該間隔35 中。關於本實施例中間隔35及可變阻抗材料33之側視結構,其類似圖2所示,於此不再重述。3 is a top plan view of a multi-turn overvoltage protection device according to a second embodiment of the present invention. The overvoltage protection element 30 includes an insulating substrate 31, an electrode structure 32, and a variable impedance material 33. The insulating substrate 31 is approximately rectangular, and the first conductive member 321 of the electrode structure 32 is formed at four corners of the rectangle and at a central portion of one of the long sides of the rectangle; the second conductive member 322 is formed on the other long side of the rectangle The central portion forms an electrode structure 32 including five input electrode ends and one ground electrode end. The second conductive member 322 includes a plurality of radial extensions 324 that face the first conductive member 321 . The second conductive member 322 forms a space 35 between the adjacent first conductive members 321 , and the variable impedance material 33 is formed at the interval 35 . in. Regarding the side view structure of the spacer 35 and the variable impedance material 33 in this embodiment, it is similar to that shown in FIG. 2 and will not be repeated here.

圖4係本發明第三實施例之多埠式過電壓保護元件上視示意圖。過電壓保護元件40包含絕緣基板41、電極結構42及可變阻抗材料43。絕緣基板41約成矩形,第一導電構件421係形成於該矩形的2個轉角處及同側之該矩形一長邊中央部分。第二導電構件422係形成於該矩形的另2個轉角處及該矩形另一長邊中央部分,形成包含3個輸入電極端及3個接地電極端之電極結構42。本實施例中,第一導電構件421和第二導電構件422有同樣個數,且成一對一對應。藉此可進一步避免共用接地電極端可能產生電路間彼此干擾的潛在問題。4 is a top plan view of a multi-turn type overvoltage protection element according to a third embodiment of the present invention. The overvoltage protection element 40 includes an insulating substrate 41, an electrode structure 42, and a variable impedance material 43. The insulating substrate 41 is approximately rectangular, and the first conductive member 421 is formed at two corners of the rectangle and at the central portion of the rectangular long side of the same side. The second conductive member 422 is formed at the other two corners of the rectangle and at the central portion of the other long side of the rectangle to form an electrode structure 42 including three input electrode ends and three ground electrode ends. In this embodiment, the first conductive member 421 and the second conductive member 422 have the same number and are in one-to-one correspondence. Thereby, the potential problem that the common ground electrode terminal may cause mutual interference between circuits can be further avoided.

本發明之一實施例中,前述可變阻抗材料可包含高導電磁粉末及絕緣黏結物。高導電磁粉末之含量可為該可變阻抗材料重量之10%至90%之間,其含量為該可變阻抗材料重量之20%至86%或特別是75.8%至85%為較佳。絕緣黏結物之含量可介於該可變阻抗材料重量之10%至90%之間,其含量為該可變阻抗材料重量之14%至80%或特別是14%至18%間為較佳。In an embodiment of the invention, the variable impedance material may comprise a highly conductive magnetic powder and an insulating binder. The content of the highly conductive magnetic powder may be between 10% and 90% by weight of the variable resistance material, preferably from 20% to 86% by weight or particularly from 75.8% to 85% by weight of the variable resistance material. The content of the insulating binder may be between 10% and 90% by weight of the variable impedance material, and the content is preferably between 14% and 80% or particularly between 14% and 18% by weight of the variable resistance material. .

在本發明之一實施例中,高導電磁粉末包含羰基 配體(Carbonyl Ligand)。例如,高導電磁粉末包括羰基金屬粉末(Carbonyl Metal),而其可包含例如羰基鐵粉(Carbonyl Iron)、羰基鐵鎳粉(Carbonyl Nickel)、羰基鐵鎳鈷合金粉末(Carbonyl Nickel/Cobalt Alloy)或其混合物。本發明之一實施例中,絕緣黏結物包含環氧樹脂或矽膠。In an embodiment of the invention, the highly conductive magnetic powder comprises a carbonyl group Ligand (Carbonyl Ligand). For example, the highly conductive magnetic powder includes a carbonyl metal powder, and it may contain, for example, Carbonyl Iron, Carbonyl Nickel, Carbonyl Nickel/Cobalt Alloy. Or a mixture thereof. In one embodiment of the invention, the insulating binder comprises an epoxy or silicone.

在本發明之另一實施例中,可變阻抗材料另包含半導體粉末。該半導體粉末包含氧化鋅或碳化矽。半導體粉末之含量可介於該可變阻抗材料重量之0.001%至10%之間,特別是介於0.01%至10%、0.001%至8%或1%至6.5%。In another embodiment of the invention, the variable impedance material further comprises a semiconductor powder. The semiconductor powder contains zinc oxide or tantalum carbide. The content of the semiconductor powder may be between 0.001% and 10% by weight of the variable impedance material, in particular between 0.01% and 10%, 0.001% to 8% or 1% to 6.5%.

在本發明之又一實施例中,可變阻抗材料另包含絕緣粉末。該絕緣粉末包含金屬氧化物,其可為如氧化鋁或氧化鋯。絕緣粉末之含量可介於該可變阻抗材料重量之0.001%至10%之間,或特別是介於1%至10%、0.001%至8%或1%至6%。In still another embodiment of the present invention, the variable impedance material further comprises an insulating powder. The insulating powder comprises a metal oxide which may be, for example, alumina or zirconia. The content of the insulating powder may be between 0.001% and 10% by weight of the variable impedance material, or in particular between 1% and 10%, 0.001% to 8% or 1% to 6%.

一實施例中,可變阻抗材料可包含氧化鋅或碳化矽等半導體粉末,其含量可佔可變阻抗材料重量之0.001%至10%間,或特別是介於0.01%至10%之間。In one embodiment, the variable impedance material may comprise a semiconductor powder such as zinc oxide or tantalum carbide, which may be present in an amount between 0.001% and 10%, or especially between 0.01% and 10% by weight of the variable impedance material.

在可變阻抗材料中加入包括羰基金屬粉末(如羰基鐵粉或羰基鎳粉)不僅能抑制過電壓,且能耗散暫態電流。與傳統靜電放電裝置不同之處,在於以羰 基金屬之相對高的導電磁金屬粉末能降低元件之觸發電壓。高導電磁特性也能吸收會造成訊號損壞和資料損失之電磁輻射。The addition of a metal carbonyl powder (such as carbonyl iron powder or nickel carbonyl powder) to a variable-resistance material not only suppresses overvoltage, but also dissipates transient current. The difference with the traditional electrostatic discharge device is that it is carbonyl. The relatively high conductive magnetic metal powder of the base metal can reduce the trigger voltage of the component. Highly conductive magnetic properties also absorb electromagnetic radiation that can cause signal damage and data loss.

本發明利用單一元件利用切割、雷射或微影蝕刻等圖案化技術製作多埠的電極結構,藉此單顆元件即可提供多顆過電壓保護元件的功能,不僅有助於元件微型化的需求,且可有效降低成本。除上述實施例之外,熟習本項技術者亦可依需求製作其他各式之多埠電極結構。再者,搭配前述特定之可變阻抗材料,可進一步提升過電壓保護元件之性能。The invention utilizes a single component to fabricate a multi-turn electrode structure by using a patterning technique such as dicing, laser or lithography etching, whereby a single component can provide a plurality of overvoltage protection components, which not only contributes to miniaturization of components. Demand, and can effectively reduce costs. In addition to the above embodiments, those skilled in the art can also fabricate other various electrode structures as needed. Furthermore, the performance of the overvoltage protection component can be further improved by the combination of the specific variable impedance material described above.

本發明之技術內容及技術特點已揭示如上,然而熟悉本項技術之人士仍可能基於本發明之教示及揭示而作種種不背離本發明精神之替換及修飾。因此,本發明之保護範圍應不限於實施例所揭示者,而應包括各種不背離本發明之替換及修飾,並為以下之申請專利範圍所涵蓋。The technical and technical features of the present invention have been disclosed as above, and those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the present invention should be construed as being limited by the scope of the appended claims

10、30、40‧‧‧過電壓保護元件10, 30, 40‧‧‧Overvoltage protection components

11、31、41‧‧‧絕緣基板11, 31, 41‧‧‧ insulating substrate

12、32、42‧‧‧電極結構12, 32, 42‧‧‧ electrode structure

13、33、43‧‧‧可變阻抗材料13, 33, 43‧‧‧Variable impedance materials

14‧‧‧表面14‧‧‧ surface

15、35、45‧‧‧間隔15, 35, 45‧‧ ‧ intervals

121、321、421‧‧‧第一導電構件121, 321, 421‧‧‧ first conductive member

122、322、422‧‧‧第二導電構件122, 322, 422‧‧‧ second conductive member

圖1及圖2係本發明第一實施例之過電壓保護元件示意圖。1 and 2 are schematic views of an overvoltage protection component of a first embodiment of the present invention.

圖3係本發明第二實施例之過電壓保護元件示意圖。3 is a schematic diagram of an overvoltage protection component of a second embodiment of the present invention.

圖4係本發明第三實施例之過電壓保護元件示意 圖。Figure 4 is a schematic diagram of an overvoltage protection component of a third embodiment of the present invention Figure.

10‧‧‧過電壓保護元件10‧‧‧Overvoltage protection components

11‧‧‧絕緣基板11‧‧‧Insert substrate

12‧‧‧電極結構12‧‧‧Electrode structure

13‧‧‧可變阻抗材料13‧‧‧Variable impedance material

15‧‧‧間隔15‧‧‧ interval

121‧‧‧第一導電構件121‧‧‧First conductive member

122‧‧‧第二導電構件122‧‧‧Second conductive member

Claims (17)

一種多埠式過電壓保護元件,包括:一絕緣基板;複數個第一導電構件,設置於該絕緣基板之一表面,作為輸入電極端;至少一第二導電構件,設置於該絕緣基板之該表面,且與鄰近之該第一導電構件間形成至少一間隔,該第二導電構件係作為接地電極端;以及至少一可變阻抗材料件,形成於該間隔中,包含:高導電磁粉末,其含量係介於該可變阻抗材料重量之10%至90%之間;以及絕緣黏結物,其含量係介於該可變阻抗材料重量之10%至90%之間;其中該絕緣基板係成矩形,該第一導電構件係至少形成於該矩形的4個轉角處,該第二導電構件形成於該矩形的兩長邊中央部分,形成包含4個輸入電極端及2個接地電極端之電極結構。 A multi-turn type over-voltage protection component includes: an insulating substrate; a plurality of first conductive members disposed on a surface of the insulating substrate as an input electrode end; at least one second conductive member disposed on the insulating substrate Forming at least one space between the first conductive member and the adjacent first conductive member, the second conductive member serving as a ground electrode end; and at least one variable impedance material member formed in the space, comprising: a highly conductive magnetic powder, The content is between 10% and 90% by weight of the variable impedance material; and the insulating binder is between 10% and 90% by weight of the variable impedance material; wherein the insulating substrate is Forming a rectangle, the first conductive member is formed at least at four corners of the rectangle, and the second conductive member is formed at a central portion of the two long sides of the rectangle to form four input electrode ends and two ground electrode ends. Electrode structure. 根據請求項1之多埠式過電壓保護元件,其中該間隔小於等於0.1mm。 The multi-turn overvoltage protection component of claim 1, wherein the interval is less than or equal to 0.1 mm. 根據請求項1之多埠式過電壓保護元件,其中該矩形的轉角處形成斜角,且矩形之長邊中央部分形成凹口。 A multi-type overvoltage protection element according to claim 1, wherein the corner of the rectangle forms an oblique angle, and a central portion of the long side of the rectangle forms a notch. 根據請求項3之多埠式過電壓保護元件,其中該斜角 係弧形,該凹口係半圓形。 According to claim 3, the multi-turn type overvoltage protection component, wherein the bevel angle It is curved and the notch is semi-circular. 根據請求項1之多埠式過電壓保護元件,其中該第一導電構件和第二導電構件有同樣個數,且成一對一對應。 The multi-turn overvoltage protection component of claim 1, wherein the first conductive member and the second conductive member have the same number and are in one-to-one correspondence. 根據請求項1之多埠式過電壓保護元件,其中該高導電磁粉末包含羰基金屬粉末。 A multi-type overvoltage protection element according to claim 1, wherein the highly conductive magnetic powder comprises a metal carbonyl powder. 根據請求項1之多埠式過電壓保護元件,其中該高導電磁粉末包含羰基鐵粉、羰基鎳粉、羰基鎳鈷合金粉末或其混合物。 A multi-type overvoltage protection element according to claim 1, wherein the highly conductive magnetic powder comprises carbonyl iron powder, nickel carbonyl powder, nickel carbonyl cobalt powder or a mixture thereof. 根據請求項1之多埠式過電壓保護元件,其中該絕緣黏結物包含環氧樹脂或矽膠。 A multi-type overvoltage protection component according to claim 1, wherein the insulating adhesive comprises an epoxy resin or a silicone rubber. 根據請求項1之多埠式過電壓保護元件,其另包含半導體粉末,且該半導體粉末之含量係介於該可變阻抗材料重量之0.001%至10%之間。 The multi-turn overvoltage protection component of claim 1, further comprising a semiconductor powder, and the semiconductor powder is present in an amount between 0.001% and 10% by weight of the variable impedance material. 根據請求項9之多埠式過電壓保護元件,其中該半導體粉末包含氧化鋅或碳化矽。 A multi-type overvoltage protection element according to claim 9, wherein the semiconductor powder comprises zinc oxide or tantalum carbide. 根據請求項1之多埠式過電壓保護元件,其另包含絕緣粉末,其含量係介於該可變阻抗材料重量之0.001%至10%之間。 The multi-type overvoltage protection component of claim 1, further comprising an insulating powder in an amount of between 0.001% and 10% by weight of the variable impedance material. 根據請求項11之多埠式過電壓保護元件,其中該絕緣粉末係氧化鋁或氧化鋯。 A multi-type overvoltage protection element according to claim 11, wherein the insulating powder is alumina or zirconia. 一種多埠式過電壓保護元件,包括:一絕緣基板;複數個第一導電構件,設置於該絕緣基板之一表面,作為輸入電極端;至少一第二導電構件,設置於該絕緣基板之該表面,且與鄰近之該第一導電構件間形成至少一間隔,該第二導電構件係作為接地電極端;以及至少一可變阻抗材料件,形成於該間隔中,包含:高導電磁粉末,其含量係介於該可變阻抗材料重量之10%至90%之間;以及絕緣黏結物,其含量係介於該可變阻抗材料重量之10%至90%之間;其中該絕緣基板係成矩形,該第一導電構件係至少形成於該矩形的4個轉角處,第二導電構件至少形成於該矩形的一長邊中央部分;該第一導電構件另包含形成於該矩形之另一長邊中央部分者,形成包含5個輸入電極端及1個接地電極端之電極結構。 A multi-turn type over-voltage protection component includes: an insulating substrate; a plurality of first conductive members disposed on a surface of the insulating substrate as an input electrode end; at least one second conductive member disposed on the insulating substrate Forming at least one space between the first conductive member and the adjacent first conductive member, the second conductive member serving as a ground electrode end; and at least one variable impedance material member formed in the space, comprising: a highly conductive magnetic powder, The content is between 10% and 90% by weight of the variable impedance material; and the insulating binder is between 10% and 90% by weight of the variable impedance material; wherein the insulating substrate is Rectangular, the first conductive member is formed at least at four corners of the rectangle, and the second conductive member is formed at least at a central portion of a long side of the rectangle; the first conductive member further includes another one formed on the rectangle In the central portion of the long side, an electrode structure including five input electrode ends and one ground electrode end is formed. 根據請求項13之多埠式過電壓保護元件,其中該第二導電構件包含朝向該第一導電構件之複數個放射狀延伸部。 The multi-turn overvoltage protection component of claim 13, wherein the second electrically conductive member comprises a plurality of radial extensions toward the first electrically conductive member. 一種多埠式過電壓保護元件,包括:一絕緣基板; 複數個第一導電構件,設置於該絕緣基板之一表面,作為輸入電極端;至少一第二導電構件,設置於該絕緣基板之該表面,且與鄰近之該第一導電構件間形成至少一間隔,該第二導電構件係作為接地電極端;以及至少一可變阻抗材料件,形成於該間隔中,包含:高導電磁粉末,其含量係介於該可變阻抗材料重量之10%至90%之間;以及絕緣黏結物,其含量係介於該可變阻抗材料重量之10%至90%之間;其中該絕緣基板係成矩形,該第一導電構件係形成於該矩形的2個轉角處及同側之該矩形一長邊中央部分,該第二導電構件係形成於該矩形的另2個轉角處及該矩形另一長邊中央部分,形成包含3個輸入電極端及3個接地電極端之電極結構。 A multi-turn type over-voltage protection component comprises: an insulating substrate; a plurality of first conductive members disposed on a surface of the insulating substrate as an input electrode end; at least one second conductive member disposed on the surface of the insulating substrate and forming at least one adjacent the adjacent first conductive member The second conductive member serves as a ground electrode end; and at least one variable impedance material member is formed in the space, comprising: a highly conductive magnetic powder, the content of which is 10% of the weight of the variable impedance material to Between 90%; and an insulating binder, the content of which is between 10% and 90% by weight of the variable impedance material; wherein the insulating substrate is rectangular, and the first conductive member is formed on the rectangular 2 a central portion of the long side of the rectangle at the corner and the same side, the second conductive member is formed at the other two corners of the rectangle and at the central portion of the other long side of the rectangle, forming three input electrode ends and Electrode structure of the ground electrode end. 根據請求項15之多埠式過電壓保護元件,其中該矩形的轉角處形成斜角,且矩形之長邊中央部分形成凹口。 The multi-turn type overvoltage protection element according to claim 15, wherein the corner of the rectangle forms an oblique angle, and a central portion of the long side of the rectangle forms a notch. 根據請求項16之多埠式過電壓保護元件,其中該斜角係弧形,該凹口係半圓形。 The multi-turn overvoltage protection component of claim 16, wherein the bevel is curved and the recess is semi-circular.
TW101121457A 2012-06-15 2012-06-15 Multi-channel over-voltage protection device TWI495077B (en)

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TWM361840U (en) * 2008-07-23 2009-07-21 Ta I Technology Co Ltd Chip type electric static discharge (ESD) protection element with gas chamber covering micro gap between electrodes
TW200939257A (en) * 2008-03-06 2009-09-16 Polytronics Technology Corp Variable impendance material

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TW200939257A (en) * 2008-03-06 2009-09-16 Polytronics Technology Corp Variable impendance material
TWM361840U (en) * 2008-07-23 2009-07-21 Ta I Technology Co Ltd Chip type electric static discharge (ESD) protection element with gas chamber covering micro gap between electrodes

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