TWI489203B - Positive radiation-sensitive composition, interlayer insulation film, and method for producing the same - Google Patents

Positive radiation-sensitive composition, interlayer insulation film, and method for producing the same Download PDF

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TWI489203B
TWI489203B TW099144134A TW99144134A TWI489203B TW I489203 B TWI489203 B TW I489203B TW 099144134 A TW099144134 A TW 099144134A TW 99144134 A TW99144134 A TW 99144134A TW I489203 B TWI489203 B TW I489203B
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radiation
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TW201129863A (en
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Daigo Ichinohe
Masaaki Hanamura
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Jsr Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0223Iminoquinonediazides; Para-quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

Description

正型感放射線性組成物、層間絕緣膜及其形成方法Positive type radiation linear composition, interlayer insulating film and forming method thereof

本發明涉及適合作為用於形成液晶顯示元件(LCD)、有機EL顯示元件(OLED)等顯示元件的層間絕緣膜的材料的正型感放射線性組成物、由該組成物形成的層間絕緣膜以及該層間絕緣膜的形成方法。The present invention relates to a positive-type radiation-sensitive composition suitable as a material for forming an interlayer insulating film of a display element such as a liquid crystal display element (LCD) or an organic EL display element (OLED), an interlayer insulating film formed of the composition, and A method of forming the interlayer insulating film.

顯示元件中一般基於使層狀地配置的配線間絕緣為目的而設置層間絕緣膜。作為層間絕緣膜的形成材料廣泛使用感放射線性組成物,這是因為較佳為該組成物得到必要的圖案形狀的步驟數少,而且具有足夠平整性。In the display element, an interlayer insulating film is generally provided for the purpose of insulating the interconnects arranged in a layered manner. A radiation-sensitive composition is widely used as a material for forming an interlayer insulating film because it is preferable that the number of steps for obtaining a necessary pattern shape of the composition is small and that it has sufficient flatness.

另外,顯示元件的層間絕緣膜必須形成配線用的接觸孔的圖案。負型組成物由於難以形成可以實際使用等級的孔徑的接觸孔,所以在形成顯示元件的層間絕緣膜時,廣泛使用正型感放射線性組成物(參照日本特開2001-354822號公報)。Further, the interlayer insulating film of the display element must form a pattern of contact holes for wiring. Since the negative-type composition is difficult to form a contact hole having an aperture of a practical use level, a positive-type radiation-sensitive composition is widely used in forming an interlayer insulating film of a display element (refer to Japanese Laid-Open Patent Publication No. 2001-354822).

另一方面,作為形成層間絕緣膜使用的感放射線性組成物的成分主要使用丙烯酸類樹脂。相對於此,嘗試提出了使用耐熱性和透明性比丙烯酸類樹脂更優異的聚矽氧烷類材料作為感放射線性組成物的成分(參照日本特開2000-1648號公報、日本特開2006-178436號公報)。On the other hand, an acrylic resin is mainly used as a component of the radiation sensitive composition used for forming the interlayer insulating film. On the other hand, attempts have been made to use a polyoxyalkylene-based material which is more excellent in heat resistance and transparency than an acrylic resin as a component of a radiation-sensitive composition (refer to Japanese Laid-Open Patent Publication No. 2000-1648, JP-A-2006-- Bulletin No. 178436).

作為這種顯示元件例如使用層間絕緣膜的TFT型液晶顯示元件等顯示元件經過在層間絕緣膜上形成透明電極膜,然後在其上形成液晶配向膜的步驟製造。在這種情況下,層間絕緣膜在透明電極膜的形成步驟中暴露在高溫條件下,或者暴露在形成電極圖案使用的抗蝕剝離液中,所以必須要有針對它們的耐受性。另外,層間絕緣膜在其製造過程的顯影步驟中,如果顯影時間比最佳時間略微過量,則顯影液滲透到圖案和基板間,容易產生剝落,所以必須嚴格控制顯影時間。此外,近年來,在使用TFT型液晶顯示元件等顯示元件的顯示設備中,具有大畫面化、高亮度化、高精度化、高速應答化、輕薄化等趨勢,所以對用於形成層間絕緣膜的感放射線性組成物的高的放射線靈敏度以及形成的層間絕緣膜的低介電常數以及高透過率目前也在增加,要求高的性能。A display element such as a TFT-type liquid crystal display element using such an interlayer insulating film as such a display element is produced by a step of forming a transparent electrode film on an interlayer insulating film and then forming a liquid crystal alignment film thereon. In this case, the interlayer insulating film is exposed to high temperature conditions in the formation step of the transparent electrode film, or exposed to the resist stripping liquid used for forming the electrode pattern, so resistance to them must be required. Further, in the developing step of the interlayer insulating film, if the developing time is slightly excessive than the optimum time, the developer penetrates between the pattern and the substrate, and peeling easily occurs, so the development time must be strictly controlled. In addition, in recent years, display devices using display elements such as TFT-type liquid crystal display elements have a tendency to increase in size, increase in brightness, high precision, high-speed response, and thinness, so that they are used to form an interlayer insulating film. The high radiation sensitivity of the radiation-sensitive composition and the low dielectric constant and high transmittance of the formed interlayer insulating film are also currently increasing, requiring high performance.

由於這種近年來的大畫面電視的廣泛普及以及削減製造成本的要求,在製造帶有彩色濾光片的基板時使用的基板玻璃尺寸也有大型化的趨勢。因此,在基板上形成層間絕緣膜時的感放射線性組成物的塗布步驟中,難以採用目前廣泛使用的旋塗法。因此,為了對大型玻璃基板進行塗布,可以採用從狹縫狀的噴嘴噴出感放射線性組成物進行塗布的所謂的狹縫塗布法來代替這種旋塗法。這種狹縫塗布法與旋塗法相比,還具有可以減少塗布所需要的感放射線性組成物的量的優點,還有助於削減顯示元件的製造成本。該狹縫塗布法是通過真空吸附將基板密合到塗布臺上,將從塗布噴嘴在一定方向上掃過,在基板上形成塗膜進行的。形成塗膜後,通過使藏在真空吸附用的孔中的支撐銷上升,基板從塗布台被舉起,輸送到下一個步驟。在這一系列的步驟中,有可能在塗膜上產生用於真空吸附的孔引起的微細的凹凸形成的不勻,成為實現作為層間絕緣膜的性質所要求的高度平整性的障礙。Due to the widespread use of large-screen televisions in recent years and the demand for reduction in manufacturing costs, the size of substrate glass used in the production of substrates with color filters has also increased. Therefore, in the coating step of the radiation sensitive composition when the interlayer insulating film is formed on the substrate, it is difficult to employ a spin coating method which is widely used at present. Therefore, in order to apply a large-sized glass substrate, a so-called slit coating method in which a radiation-sensitive composition is sprayed from a slit-shaped nozzle can be used instead of the spin coating method. Such a slit coating method has an advantage of reducing the amount of the radiation-sensitive composition required for coating as compared with the spin coating method, and also contributes to reducing the manufacturing cost of the display element. In the slit coating method, the substrate is adhered to the coating stage by vacuum suction, and the coating film is swept in a predetermined direction from the coating nozzle to form a coating film on the substrate. After the coating film is formed, by raising the support pin hidden in the hole for vacuum suction, the substrate is lifted from the coating table and transported to the next step. In this series of steps, unevenness in formation of fine concavities and convexities due to pores for vacuum adsorption may occur on the coating film, which may become an obstacle to achieving high level of flatness required as a property of the interlayer insulating film.

在這種情況下,強烈希望開發出一種聚有機矽氧烷類的正型感放射線性組成物,該組成物可以形成作為層間絕緣膜一般要求的耐熱性、透明性、耐溶劑性以及低介電性優異,而且具有無塗布不勻的高度平整性(膜厚均勻性)的硬化膜,而且具有很高的放射線靈敏度和大的顯影裕度(用於形成良好的圖案的顯影時間的允許範圍)。Under the circumstances, it has been strongly desired to develop a positive-type radiation linear composition of a polyorganosiloxane which can form heat resistance, transparency, solvent resistance and low dielectric which are generally required as an interlayer insulating film. It is excellent in electrical properties and has a high level of flatness (film thickness uniformity) without coating unevenness, and has high radiation sensitivity and large development margin (allowable range of development time for forming a good pattern) ).

[現有技術文獻][Prior Art Literature] [專利文獻][Patent Literature]

[專利文獻1]日本特開2000-1648號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-1648

[專利文獻2]日本特開2006-178436號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2006-178436

本發明是基於上述問題提出的,其目的在於提供一種聚有機矽氧烷類的正型感放射線性組成物,該組成物可以形成具有優異的耐熱性、透明性、耐溶劑性以及低介電性,且具有無塗布不勻的高度平整性(膜厚均勻性)的層間絕緣膜,而且具有很高的放射線靈敏度和大的顯影裕度;以及提供由該組成物形成的層間絕緣膜、以及該層間絕緣膜的形成方法。The present invention has been made in view of the above problems, and an object thereof is to provide a positive-type radiation-sensitive composition of a polyorganosiloxane, which can be formed to have excellent heat resistance, transparency, solvent resistance, and low dielectric properties. And an interlayer insulating film having high flatness (film thickness uniformity) without uneven coating, and having high radiation sensitivity and large development margin; and providing an interlayer insulating film formed of the composition, and A method of forming the interlayer insulating film.

為了解決上述課題而提出的本發明是一種正型感放射線性組成物,其含有:The present invention has been made in order to solve the above problems, and is a positive radiation sensitive composition comprising:

[A]矽氧烷聚合物,[A] a nonoxyl polymer,

[B]醌二疊氮化合物,以及[B] quinone diazide, and

[C]包含(c1)下述式(1)所示的化合物、(c2)下述式(2)所示的化合物以及(c3)具有下述式(3)所示的基團的聚合性不飽和化合物的聚合性不飽和化合物的共聚物。[C] includes (c1) a compound represented by the following formula (1), (c2) a compound represented by the following formula (2), and (c3) a polymerizable group having a group represented by the following formula (3); A copolymer of a polymerizable unsaturated compound of an unsaturated compound.

CH2 =CR1 COO─Cα H ─Cβ F2β+1  (1)CH 2 =CR 1 COO─C α H ─C β F 2β+1 (1)

式(1)中,R1 是氫原子或甲基,α是0~6的整數,β是1~20的整數。In the formula (1), R 1 is a hydrogen atom or a methyl group, α is an integer of 0 to 6, and β is an integer of 1 to 20.

CH2 =CR2 COO─(Cγ H ─O)a ─R3  (2)CH 2 =CR 2 COO─(C γ H ─O) a ─R 3 (2)

式(2)中,R2 是氫原子或甲基,R3 是碳原子數為1~12的烷基,γ是2或3,a是重複單元數,其數均值是1~30。In the formula (2), R 2 is a hydrogen atom or a methyl group, R 3 is an alkyl group having 1 to 12 carbon atoms, γ is 2 or 3, and a is a repeating unit number, and the number average thereof is 1 to 30.

式(3)中,R4 、R5 、R6 、R7 和R8 各自獨立地是碳原子數1~20的烷基、苯基或下述式(4)所示的基團,b是0~3的整數。In the formula (3), R 4 , R 5 , R 6 , R 7 and R 8 are each independently an alkyl group having 1 to 20 carbon atoms, a phenyl group or a group represented by the following formula (4), b It is an integer from 0 to 3.

式(4)中,R9 、R10 和R11 各自獨立地是碳原子數1~20的烷基或苯基,c是0~3的整數。In the formula (4), R 9 , R 10 and R 11 are each independently an alkyl group having 1 to 20 carbon atoms or a phenyl group, and c is an integer of 0 to 3.

該正型感放射線性組成物具有正型的感放射線特性,通過除了上述[A]和[B]成分以外,還含有由具有特定結構的單體形成的共聚物[C]成分,由此可以形成均衡性良好地滿足耐熱性、透明性、耐溶劑性以及低介電性這樣一般要求的性質,具有無塗布不勻的高度平整性(膜厚均勻性)的層間絕緣膜。另外,該正型感放射線性組成物具有優異的放射線靈敏度和顯影裕度(margin)。The positive-type radiation-sensitive linear composition has positive radiation-sensing characteristics, and further contains a copolymer [C] component formed of a monomer having a specific structure in addition to the above [A] and [B] components. An insulating film having excellent properties such as heat resistance, transparency, solvent resistance, and low dielectric property is satisfactorily formed, and an interlayer insulating film having high flatness (film thickness uniformity) without uneven coating is formed. In addition, the positive-type radiation-radiating composition has excellent radiation sensitivity and development margin.

該正型感放射線性組成物中,[C]共聚物較佳為除了化合物(c1)、化合物(c2)和化合物(c3)以外,還進一步包含(c4)具有碳原子數1~8的烷基的聚合性不飽和化合物的聚合性不飽和化合物的共聚物。由此,可以提高[C]共聚物對其他成分和溶劑的親和性,進一步提高得到的層間絕緣膜的膜厚均勻性。In the positive radiation sensitive composition, the [C] copolymer preferably further comprises (c4) an alkane having 1 to 8 carbon atoms in addition to the compound (c1), the compound (c2) and the compound (c3). A copolymer of a polymerizable unsaturated compound of a polymerizable unsaturated compound. Thereby, the affinity of the [C] copolymer for other components and the solvent can be improved, and the film thickness uniformity of the obtained interlayer insulating film can be further improved.

該正型感放射線性組成物中,[C]共聚物較佳是除了化合物(c1)、化合物(c2)、化合物(c3)和化合物(c4)以外,還進一步包含(c5)在一分子中具有兩個以上的不飽和鍵的聚合性不飽和化合物的聚合性不飽和化合物的共聚物。由此,可以提高得到的層間絕緣膜的膜厚均勻性和強度,還可以提高耐熱性等一般的性質。In the positive radiation sensitive composition, the [C] copolymer preferably further comprises (c5) in one molecule in addition to the compound (c1), the compound (c2), the compound (c3) and the compound (c4). A copolymer of a polymerizable unsaturated compound having a polymerizable unsaturated compound having two or more unsaturated bonds. Thereby, the film thickness uniformity and strength of the obtained interlayer insulating film can be improved, and general properties such as heat resistance can be improved.

該正型感放射線性樹脂組成物中,化合物(c1)是下述式(5)所示的化合物,化合物(c2)是下述式(6)所示的化合物,In the positive radiation sensitive resin composition, the compound (c1) is a compound represented by the following formula (5), and the compound (c2) is a compound represented by the following formula (6).

[C]共聚物較佳是由化合物(c1)25~35質量%,化合物(c2)20~30質量%,化合物(c3)15~20質量%,化合物(c4)25~35質量%,以及化合物(c5)1~5質量%構成的聚合性不飽和化合物的共聚物。The [C] copolymer is preferably 25 to 35 mass% of the compound (c1), 20 to 30 mass% of the compound (c2), 15 to 20 mass% of the compound (c3), and 25 to 35 mass% of the compound (c4), and A copolymer of a polymerizable unsaturated compound composed of 1 to 5 mass% of the compound (c5).

CH2 =CR1 COOC2 H4 Cβ F2β+1  (5)CH 2 =CR 1 COOC 2 H 4 C β F 2β+1 (5)

式(5)中,R1 和上述式(1)中的定義相同。β是1~8的整數。In the formula (5), R 1 is the same as defined in the above formula (1). β is an integer from 1 to 8.

CH2 =CR2 COO(C2 H4 O)a R3  (6)CH 2 =CR 2 COO(C 2 H 4 O) a R 3 (6)

式(6)中,R2 和R3 分別和上述式(2)中的定義相同,重複單元數a的數平均值是4~12。In the formula (6), R 2 and R 3 are the same as defined in the above formula (2), and the number average of the number of repeating units a is 4 to 12.

通過使用這種[C]共聚物,作為表面張力低下的性能高的界面活性劑的功能,即使在使用其的比例少時,也可以提高塗膜的表面平滑性,從而可以進一步提高形成的層間絕緣膜的膜厚均勻性。By using such a [C] copolymer, as a function of a surfactant having a high surface tension and low performance, even when the ratio of the copolymer is small, the surface smoothness of the coating film can be improved, and the formed interlayer can be further improved. Film thickness uniformity of the insulating film.

該正型感放射線性組成物的[A]矽氧烷聚合物較佳為下述式(7)所示的水解性矽烷化合物的水解縮合物。The [A] siloxane polymer of the positive-type radiation-sensitive composition is preferably a hydrolysis-condensation product of the hydrolyzable decane compound represented by the following formula (7).

(R12 )x ─Si─(OR13 )4-x  (7)(R 12 ) x ─Si─(OR 13 ) 4-x (7)

式(7)中,R12 是碳原子數為1~20的非水解性有機基團,R13 是碳原子數為1~4的烷基,x是0~3的整數。In the formula (7), R 12 is a non-hydrolyzable organic group having 1 to 20 carbon atoms, R 13 is an alkyl group having 1 to 4 carbon atoms, and x is an integer of 0 to 3.

該正型感放射線性組成物中,作為[A]矽氧烷聚合物通過使用上述式(7)所示的水解性矽烷化合物的水解縮合物,可以進一步提高放射線靈敏度和顯影裕度。In the positive-type radiation-sensitive composition, by using the hydrolysis-condensation product of the hydrolyzable decane compound represented by the above formula (7) as the [A] siloxane polymer, the radiation sensitivity and the development margin can be further improved.

該正型感放射線性組成物較佳進一步含有[D]感熱性酸產生劑或感熱性鹼產生劑。通過使用這種感熱性的酸或鹼產生劑,進一步促進正型感放射線性組成物顯影後的加熱步驟中[A]成分的縮合反應,可以進一步提高得到的硬化膜的耐熱性和耐溶劑性。The positive-type radiation-sensitive composition preferably further contains a [D] heat-sensitive acid generator or a heat-sensitive base generator. By using such a thermosensitive acid or alkali generating agent, the condensation reaction of the component [A] in the heating step after development of the positive-type radiation-sensitive composition can be further promoted, and the heat resistance and solvent resistance of the obtained cured film can be further improved. .

該正型感放射線性組成物較佳進一步含有[E]脫水劑。如此,通過進一步含有脫水劑,可以提高該正型感放射線性組成物的保存穩定性。The positive-type radiation-sensitive composition preferably further contains [E] a dehydrating agent. As described above, by further containing a dehydrating agent, the storage stability of the positive-type radiation-sensitive composition can be improved.

另外,本發明的顯示元件用層間絕緣膜的形成方法包括:Further, a method of forming an interlayer insulating film for a display element of the present invention includes:

(1)在基板上形成該正型感放射線性組成物的塗膜的步驟,(1) a step of forming a coating film of the positive-type radiation-sensitive composition on a substrate,

(2)對步驟(1)形成的塗膜的至少一部分照射放射線的步驟,(2) a step of irradiating at least a part of the coating film formed in the step (1) with radiation,

(3)將步驟(2)中照射了放射線的塗膜顯影的步驟,以及(3) a step of developing the coating film irradiated with radiation in the step (2), and

(4)加熱在步驟(3)中顯影的塗膜的步驟。(4) a step of heating the coating film developed in the step (3).

在該方法中,使用具有優異的放射線靈敏度和顯影裕度的上述正型感放射線性組成物,通過利用感放射線性的曝光、顯影、加熱而形成圖案,從而可以容易地形成具有微細且精巧的圖案的顯示元件用層間絕緣膜。此外,這樣形成的層間絕緣膜的一般要求的性質,也就是耐熱性、透明性、耐溶劑性和低介電性的所有的性質以均衡性良好地優異,同時具有無塗布不勻的高度平整性。In this method, the above-described positive-type radiation-sensitive linear composition having excellent radiation sensitivity and development margin is used, and a pattern is formed by radiation-sensitive exposure, development, and heating, whereby fine and delicate can be easily formed. An interlayer insulating film is used for the display element of the pattern. Further, the generally required properties of the interlayer insulating film thus formed, that is, all of the properties of heat resistance, transparency, solvent resistance, and low dielectric property are excellent in balance, and have a high level of unevenness in coating unevenness. Sex.

發明的效果Effect of the invention

如上說明所述,本發明的正型感放射線性組成物通過含有上述[A]、[B]和[C]成分,可以形成能均衡性良好地滿足耐熱性、透明性、耐溶劑性以及低介電性這樣一般要求的性質,同時具有無塗布不勻的高度平整性的層間絕緣膜。另外,該正型感放射線性組成物顯現出優異的放射線靈敏度和顯影裕度。As described above, the positive-type radiation-sensitive composition of the present invention can form heat-resistant, transparent, solvent-resistant, and low-quality properties by containing the components [A], [B], and [C] described above. The dielectric properties are generally required, and at the same time, there is an interlayer insulating film having a high level of flatness without coating unevenness. In addition, the positive-type radiation linear composition exhibits excellent radiation sensitivity and development margin.

用於實施發明之形態Form for implementing the invention

本發明的正型感放射線性組成物含有[A]矽氧烷聚合物、[B]醌二疊氮化合物以及[C]由具有特定結構的單體形成的共聚物,可以任意地含有其他任選成分([D]感熱性酸產生劑或感熱性鹼產生劑等)。The positive radiation sensitive composition of the present invention contains [A] a decane polymer, [B] quinonediazide compound, and [C] a copolymer formed of a monomer having a specific structure, and may optionally contain other The component ([D] sensible acid generator or sensible base generator, etc.) is selected.

[A]成分:矽氧烷聚合物,[A] component: a siloxane polymer,

[A]成分的矽氧烷聚合物只要是具有矽氧烷鍵的聚合物,就沒有特別的限定。該[A]成分通過自身縮合形成硬化物。作為任選成分的後述的[D]感熱性酸產生劑或感熱性鹼產生劑在加入到正型感放射線性組成物中時,通過加熱,產生酸性活性物質或鹼性活性物質,其成為催化劑,進一步促進[A]成分自身縮合。The siloxane polymer of the component [A] is not particularly limited as long as it is a polymer having a decane bond. This [A] component forms a cured product by self-condensation. When a [D] sensible acid generator or a sensible alkali generator described later as an optional component is added to the positive susceptibility radiation composition, an acidic active substance or a basic active substance is produced by heating, which becomes a catalyst. Further promotes the self-condensation of the [A] component.

作為[A]成分的矽氧烷聚合物較佳為上述式(7)所示的水解性矽烷化合物的水解縮合物。本申請案中所述的“水解性矽烷化合物”通常是指具有可以在無催化劑、過量的水的共存下,通過在室溫(約25℃)~約100℃的溫度範圍內加熱,水解生成矽烷醇基的水解性基團的矽烷化合物,或者具有可以形成矽氧烷縮合物的水解性基團的矽烷化合物。相對於此,所述的“非水解性基團”是指在這種水解條件下,不產生水解或者縮合,穩定地存在的基團。The oxime polymer as the component [A] is preferably a hydrolysis condensate of the hydrolyzable decane compound represented by the above formula (7). The "hydrolyzable decane compound" described in the present application generally means that it can be hydrolyzed by heating at a temperature ranging from room temperature (about 25 ° C) to about 100 ° C in the presence of no catalyst and excess water. A decane compound of a hydrolyzable group of a stanol group, or a decane compound having a hydrolyzable group capable of forming a oxirane condensate. On the other hand, the "non-hydrolyzable group" means a group which stably exists without hydrolysis or condensation under such hydrolysis conditions.

在上述式(7)所示的水解性矽烷化合物的水解反應中,一部分水解性基團可以以未水解的狀態殘留。另外,這裏所述的“水解性矽烷化合物的水解縮合物”是指水解的矽烷化合物的一部分的矽烷醇基之間反應、縮合形成的水解縮合物。In the hydrolysis reaction of the hydrolyzable decane compound represented by the above formula (7), a part of the hydrolyzable group may remain in an unhydrolyzed state. Further, the "hydrolyzed condensate of a hydrolyzable decane compound" as used herein means a hydrolysis condensate formed by reaction and condensation between a stanol group of a part of a hydrolyzed decane compound.

作為上述R12 所示碳原子數為1~20的非水解性有機基團,可以列舉出碳原子數為1~12的未取代、或者被乙烯基、(甲基)丙烯醯基或環氧基取代一個以上的烷基、碳原子數為6~12的芳基、碳原子數為7~12的芳烷基等。它們可以是直鏈狀、支鏈狀或環狀,在同一分子記憶體在多個R12 時,可以是它們的組合。另外,R12 可以包含具有雜原子的結構單元。作為這種結構單元可以列舉出例如醚、酯、硫醚等。Examples of the non-hydrolyzable organic group having 1 to 20 carbon atoms represented by R 12 include unsubstituted or having a carbon number of 1 to 12 or a vinyl group, a (meth) acrylonitrile group or an epoxy group. The group is substituted with one or more alkyl groups, an aryl group having 6 to 12 carbon atoms, an aralkyl group having 7 to 12 carbon atoms, and the like. They may be linear, branched or cyclic, and when the same molecular memory is in a plurality of R 12 , it may be a combination thereof. In addition, R 12 may contain a structural unit having a hetero atom. Examples of such a structural unit include an ether, an ester, a thioether, and the like.

作為上述R13 所示的碳原子數為1~4的烷基的具體例子,可以列舉出甲基、乙基、正丙基、異丙基、丁基等。這些R13 中,從水解的容易性的觀點出發,較佳為甲基和乙基。另外,下標x是0~3的整數,更佳為0~2的整數,特佳為0或1,最佳為1。x為0~2的整數時,水解、縮合反應更容易進行,作為其結果是[A]成分自身縮合引起的硬化反應的速度變得更大,進而可以進一步提高得到的層間絕緣膜的耐熱性和耐溶劑性。Specific examples of the alkyl group having 1 to 4 carbon atoms represented by the above R 13 include a methyl group, an ethyl group, a n-propyl group, an isopropyl group, and a butyl group. Among these R 13 , a methyl group and an ethyl group are preferred from the viewpoint of easiness of hydrolysis. Further, the subscript x is an integer of 0 to 3, more preferably an integer of 0 to 2, particularly preferably 0 or 1, and most preferably 1. When x is an integer of 0 to 2, the hydrolysis and the condensation reaction are more easily carried out, and as a result, the rate of the hardening reaction by the self-condensation of the [A] component becomes larger, and the heat resistance of the obtained interlayer insulating film can be further improved. And solvent resistance.

作為上述式(7)所示的水解性矽烷化合物,可以列舉出被四個水解性基團取代的矽烷化合物、被一個非水解性基團和三個水解性基團取代的矽烷化合物、被兩個非水解性基團和兩個水解性基團取代的矽烷化合物、被三個非水解性基團和一個水解性基團取代的矽烷化合物、或者它們的混合物。The hydrolyzable decane compound represented by the above formula (7) includes a decane compound substituted with four hydrolyzable groups, a decane compound substituted with one non-hydrolyzable group and three hydrolyzable groups, and two a non-hydrolyzable group and two hydrolyzable group-substituted decane compounds, a decane compound substituted with three non-hydrolyzable groups and one hydrolyzable group, or a mixture thereof.

作為這種上述式(7)所示的水解性矽烷化合物的具體例子,分別是,作為被四個水解性基團取代的矽烷化合物,可以列舉出四甲氧基矽烷、四乙氧基矽烷、四丁氧基矽烷、四苯氧基矽烷、四苄氧基矽烷、四正丙氧基矽烷、四異丙氧基矽烷等;作為被一個非水解性基團和三個水解性基團取代的矽烷化合物,可以列舉出氯代三甲氧基矽烷、甲基三甲氧基矽烷、甲基三乙氧基矽烷、甲基三異丙氧基矽烷、甲基三丁氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、乙基三異丙氧基矽烷、乙基三丁氧基矽烷、丁基三甲氧基矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、乙烯基三正丙氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、3-丙烯醯氧基丙基三乙氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基三乙氧基矽烷、β-(3,4-環氧環己基)乙基三甲氧基矽烷等;作為被兩個非水解性基團和兩個水解性基團取代的矽烷化合物,可以列舉出二氯代二甲氧基矽烷、二甲基二甲氧基矽烷、二苯基二甲氧基矽烷、二丁基二甲氧基矽烷等;作為被三個非水解性基團和一個水解性基團取代的矽烷化合物,可以列舉出三氯代甲氧基矽烷、三丁基甲氧基矽烷、三甲基甲氧基矽烷、三甲基乙氧基矽烷、三丁基乙氧基矽烷等。Specific examples of the hydrolyzable decane compound represented by the above formula (7) include tetramethoxy decane and tetraethoxy decane, respectively, as the decane compound substituted with four hydrolyzable groups. Tetrabutoxydecane, tetraphenoxydecane, tetrabenzyloxydecane, tetra-n-propoxydecane, tetraisopropoxydecane, etc.; substituted as a non-hydrolyzable group and three hydrolyzable groups The decane compound may, for example, be chlorotrimethoxydecane, methyltrimethoxydecane, methyltriethoxydecane, methyltriisopropoxydecane, methyltributoxydecane or ethyltrimethoxy. Decane, ethyltriethoxydecane, ethyltriisopropoxydecane, ethyltributoxydecane, butyltrimethoxydecane, phenyltrimethoxydecane, phenyltriethoxydecane, ethylene Trimethoxy decane, vinyl triethoxy decane, vinyl tri-n-propoxy decane, 3-methyl propylene methoxy propyl trimethoxy decane, 3-methyl propylene methoxy propyl triethyl Oxydecane, 3-propenyloxypropyltrimethoxydecane, 3-propenyloxyl Triethoxy decane, γ-glycidoxypropyl trimethoxy decane, γ-glycidoxypropyl triethoxy decane, β-(3,4-epoxycyclohexyl)ethyltrimethoxy a decane compound or the like; as a decane compound substituted with two non-hydrolyzable groups and two hydrolyzable groups, dichlorodimethoxydecane, dimethyldimethoxydecane, diphenyldi a methoxy decane, a dibutyl dimethoxy decane, etc.; as a decane compound substituted by three non-hydrolyzable groups and one hydrolyzable group, trichloromethoxy decane, tributyl methoxy group Decane, trimethyl methoxy decane, trimethyl ethoxy decane, tributyl ethoxy decane, and the like.

這些上述式(7)所示的水解性矽烷化合物中,較佳為被4個水解性基團取代的矽烷化合物與被一個非水解性基團和三個水解性基團取代的矽烷化合物,特佳為被一個非水解性基團和三個水解性基團取代的矽烷化合物。作為較佳的水解性矽烷化合物的具體例子,可以列舉出四乙氧基矽烷、甲基三甲氧基矽烷、甲基三乙氧基矽烷、甲基三異丙氧基矽烷、甲基三丁氧基矽烷、苯基三甲氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、乙基三異丙氧基矽烷、乙基三丁氧基矽烷、丁基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷。這種水解性矽烷化合物可以單獨使用一種,或者也可以組合兩種以上使用。Among the hydrolyzable decane compounds represented by the above formula (7), a decane compound substituted with four hydrolyzable groups and a decane compound substituted with one non-hydrolyzable group and three hydrolyzable groups are preferable. A decane compound substituted with a non-hydrolyzable group and three hydrolyzable groups. Specific examples of the preferred hydrolyzable decane compound include tetraethoxy decane, methyl trimethoxy decane, methyl triethoxy decane, methyl triisopropoxy decane, and methyl tributoxide. Base decane, phenyltrimethoxydecane, ethyltrimethoxydecane, ethyltriethoxydecane, ethyltriisopropoxydecane, ethyltributoxydecane, butyltrimethoxydecane, gamma - glycidoxypropyltrimethoxydecane, 3-methylpropenyloxypropyltrimethoxydecane, 3-methylpropenyloxypropyltriethoxydecane. These hydrolyzable decane compounds may be used alone or in combination of two or more.

使上述式(7)所示的水解性矽烷化合物水解、縮合的條件只要是使上述式(7)所示的水解性矽烷化合物的至少一部分水解,將水解性基團轉變為矽烷醇基,產生縮合反應的,就沒有特別的限定,可以如下實施一個例子。上述式(7)所示的水解性矽烷化合物的水解、縮合中使用的水較佳使用反滲膜處理、離子交換處理、蒸餾等方法精製的水。通過使用這種精製水,可以抑制副反應,提高水解的反應性。水的使用量,相對於總計量1mol上述式(7)所示的水解性矽烷化合物的水解性基團(-OR13 ),較佳為0.1~3mol,更佳為0.3~2mol,最佳為0.5~1.5mol的量。通過使用這種量的水,可以使水解、縮合的反應速度最優化。The conditions for hydrolyzing and condensing the hydrolyzable decane compound represented by the above formula (7) are such that at least a part of the hydrolyzable decane compound represented by the above formula (7) is hydrolyzed, and the hydrolyzable group is converted into a stanol group. The condensation reaction is not particularly limited, and an example can be carried out as follows. The water used for the hydrolysis and condensation of the hydrolyzable decane compound represented by the above formula (7) is preferably water purified by a method such as a reverse osmosis membrane treatment, an ion exchange treatment, or a distillation. By using such purified water, side reactions can be suppressed and the reactivity of hydrolysis can be improved. The amount of the water to be used is preferably 0.1 to 3 mol, more preferably 0.3 to 2 mol, based on 1 mol of the hydrolyzable group (-OR 13 ) of the hydrolyzable decane compound represented by the above formula (7). An amount of 0.5 to 1.5 mol. By using this amount of water, the reaction rate of hydrolysis and condensation can be optimized.

作為可以在上述式(7)所示的水解性矽烷化合物的水解、縮合中使用的溶劑,沒有特別的限定,通常可以使用和後述的正型感放射線性組成物的製備中使用的溶劑同樣的溶劑。作為這種溶劑的較佳的例子,可以列舉出乙二醇單烷基醚乙酸酯、二乙二醇二烷基醚、丙二醇單烷基醚、丙二醇單烷基醚乙酸酯、丙酸酯類。這些溶劑中,特佳二乙二醇二甲基醚、二乙二醇乙基甲基醚、丙二醇單甲基醚、丙二醇單乙基醚、丙二醇單甲基醚乙酸酯或者3-甲氧基丙酸甲酯。The solvent which can be used for the hydrolysis and condensation of the hydrolyzable decane compound represented by the above formula (7) is not particularly limited, and usually, the same solvent as that used in the preparation of the positive-type radiation-sensitive composition described later can be used. Solvent. Preferable examples of such a solvent include ethylene glycol monoalkyl ether acetate, diethylene glycol dialkyl ether, propylene glycol monoalkyl ether, propylene glycol monoalkyl ether acetate, and propionic acid. Esters. Among these solvents, Tejia diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether acetate or 3-methoxy Methyl propyl propionate.

上述式(7)所示的水解性矽烷化合物的水解、縮合反應較佳在酸催化劑(例如,鹽酸、硫酸、硝酸、甲酸、草酸、乙酸、三氟乙酸、三氟甲磺酸、磷酸、酸性離子交換樹脂、各種路易士酸)、鹼催化劑(例如,氨、一級胺、二級胺、三級胺、吡啶等含氮化合物;鹼性離子交換樹脂;氫氧化鈉等氫氧化物;碳酸鉀等碳酸鹽;乙酸鈉等羧酸鹽;各種路易士鹼)、或者烷氧化物(例如,烷氧化鋯、烷氧化鈦、烷氧化鋁)等催化劑的存在下進行。例如,作為烷氧化鋁可以使用四異丙氧基鋁。作為催化劑的用量,從促進水解、縮合反應的觀點來看,相對於1mol水解性矽烷化合物的單體,較佳為0.2mol以下,更佳為0.00001~0.1mol。The hydrolysis and condensation reaction of the hydrolyzable decane compound represented by the above formula (7) is preferably carried out on an acid catalyst (for example, hydrochloric acid, sulfuric acid, nitric acid, formic acid, oxalic acid, acetic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, phosphoric acid, acidity). Ion exchange resin, various Lewis acid), alkali catalyst (for example, ammonia, primary amine, secondary amine, tertiary amine, pyridine and other nitrogen-containing compounds; basic ion exchange resin; hydroxide such as sodium hydroxide; potassium carbonate It is carried out in the presence of a catalyst such as a carbonate; a carboxylate such as sodium acetate; various Lewis bases; or an alkoxide (for example, zirconium alkoxide, titanium alkoxide or aluminum alkoxide). For example, aluminum tetraisopropoxide can be used as the alkane alumina. The amount of the catalyst to be used is preferably 0.2 mol or less, more preferably 0.00001 to 0.1 mol, per mol of the monomer of the hydrolyzable decane compound from the viewpoint of promoting hydrolysis and condensation reaction.

上述式(7)所示的水解性矽烷化合物的水解、縮合中的反應溫度和反應時間可以適當設定。例如,可以採用下述條件。反應溫度較佳為40~200℃,更佳為50~150℃。反應時間較佳為30分鐘~24小時,更佳為1~12小時。通過選取這種反應溫度和反應時間,可以最有效地進行水解、縮合反應。在該水解、縮合中,可以在反應系統內一次性添加水解性矽烷化合物、水和催化劑,進行單步反應;或者也可以分幾次在反應系統內添加水解性矽烷化合物、水和催化劑,進行多步的水解和縮合反應。另外,水解、縮合反應後,加入脫水劑,接著通過蒸發,從反應系統除去水和生成的醇。該階段中使用的脫水劑,一般由於吸附或包合過量的水,脫水能完全消失,或者通過蒸發除去,所以並不計入添加到正型感放射線性組成物中的後述[E]成分的脫水劑的範疇內。The reaction temperature and reaction time in the hydrolysis and condensation of the hydrolyzable decane compound represented by the above formula (7) can be appropriately set. For example, the following conditions can be employed. The reaction temperature is preferably from 40 to 200 ° C, more preferably from 50 to 150 ° C. The reaction time is preferably from 30 minutes to 24 hours, more preferably from 1 to 12 hours. By selecting such a reaction temperature and reaction time, the hydrolysis and condensation reaction can be carried out most efficiently. In the hydrolysis and condensation, a hydrolyzable decane compound, water, and a catalyst may be added in one portion of the reaction system to carry out a single-step reaction; or a hydrolyzable decane compound, water, and a catalyst may be added to the reaction system in several portions. Multi-step hydrolysis and condensation reactions. Further, after the hydrolysis and condensation reaction, a dehydrating agent is added, followed by evaporation to remove water and the produced alcohol from the reaction system. The dehydrating agent used in this stage generally is dehydrated or completely removed by adsorption or inclusion of excess water, or is removed by evaporation, so that the component [E] added later added to the positive-type radiation-sensitive composition is not included. Within the scope of dehydrating agents.

上述式(7)所示的水解性矽烷化合物的水解縮合物的分子量可以通過使用四氫呋喃作為移動相的GPC(凝膠滲透色譜法),以聚苯乙烯換算的數平均分子量測定。而且,水解縮合物的數平均分子量通常較佳為5.0×102 ~1.0×104 的範圍內的值,更佳為1.0×103 ~5.0×103 範圍內的值。通過使水解縮合物的數平均分子量的值為5.0×102 以上,可以改善正型感放射線性組成物的塗膜的成膜性。另一方面,通過使水解縮合物的數均分子量的值為1.0×104 以下,可以防止感放射線性組成物的感放射線性低下。The molecular weight of the hydrolysis-condensation product of the hydrolyzable decane compound represented by the above formula (7) can be measured by a number average molecular weight in terms of polystyrene by GPC (gel permeation chromatography) using tetrahydrofuran as a mobile phase. Further, the number average molecular weight of the hydrolysis condensate is usually preferably a value in the range of 5.0 × 10 2 to 1.0 × 10 4 , more preferably a value in the range of 1.0 × 10 3 to 5.0 × 10 3 . When the value of the number average molecular weight of the hydrolysis-condensation product is 5.0 × 10 2 or more, the film formability of the coating film of the positive-type radiation-sensitive composition can be improved. On the other hand, when the value of the number average molecular weight of the hydrolysis-condensation product is 1.0 × 10 4 or less, the radiation sensitivity of the radiation-sensitive composition can be prevented from being lowered.

[B]成分:醌二疊氮化合物[B] component: quinonediazide compound

[B]成分是通過照射放射線產生羧酸的醌二疊氮化合物。含有這種醌二疊氮化合物的正型感放射線性組成物具有通過顯影步驟除去在放射照射的步驟中的曝光部分的正型感放射線特性。作為[B]成分的醌二疊氮化合物較佳使用通過使構成母核的具有酚羥基的化合物和萘醌二疊氮磺醯鹵進行酯化反應得到的化合物。作為具有酚羥基的化合物的例子,可以列舉出酚羥基的鄰位和對位各自獨立地是氫或下述式(8)所示的取代基的任意情形的化合物。The component [B] is a quinonediazide compound which generates a carboxylic acid by irradiation with radiation. The positive-type radiation-sensitive composition containing such a quinonediazide compound has positive-type radiation characteristics of the exposed portion which is removed in the step of radiation irradiation by a developing step. As the quinonediazide compound as the component [B], a compound obtained by esterifying a compound having a phenolic hydroxyl group constituting a mother nucleus and a naphthoquinonediazide sulfonium halide is preferably used. Examples of the compound having a phenolic hydroxyl group include a compound in any case where the ortho and para positions of the phenolic hydroxyl group are independently hydrogen or a substituent represented by the following formula (8).

式中,R14 、R15 和R16 各自獨立地表示碳原子數為1~10的烷基、羧基、苯基、取代的苯基的任意情形。另外,可以由R14 、R15 和R16 中的兩個或三個形成環。In the formula, R 14 , R 15 and R 16 each independently represent an alkyl group having 1 to 10 carbon atoms, a carboxyl group, a phenyl group or a substituted phenyl group. In addition, a ring may be formed by two or three of R 14 , R 15 and R 16 .

上述式(8)所示的取代基中,R14 、R15 、R16 是碳原子數為1~10的烷基時,該烷基可以被取代,也可以不被取代。作為這種烷基的例子,可以列舉出甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基、正己基、環己基、正庚基、正辛基、三氟甲基、2-羧基乙基。作為取代的苯基的取代基,可以列舉出羥基等。另外,作為可以由R14 、R15 、R16 中的兩個或三個形成環的例子,可以列舉出環戊烷環、環己烷環、金剛烷環、芴環。In the substituent represented by the above formula (8), when R 14 , R 15 and R 16 are an alkyl group having 1 to 10 carbon atoms, the alkyl group may or may not be substituted. Examples of such an alkyl group include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, n-hexyl group, cyclohexyl group, n-heptyl group, and n-octyl group. Base, trifluoromethyl, 2-carboxyethyl. Examples of the substituent of the substituted phenyl group include a hydroxyl group and the like. Further, examples of the ring which can be formed by two or three of R 14 , R 15 and R 16 include a cyclopentane ring, a cyclohexane ring, an adamantane ring and an anthracene ring.

作為具有酚羥基的化合物的例子,可以列舉出下述式(9)和(10)所示的化合物的群組。Examples of the compound having a phenolic hydroxyl group include a group of compounds represented by the following formulas (9) and (10).

作為具有酚羥基的化合物的其他例子,可以列舉出4,4’-[1-[4-[1-[4-羥基苯基]-1-甲基乙基]苯基]伸乙基]聯苯酚、1,1,1-三(對羥基苯基)乙烷等As another example of the compound having a phenolic hydroxyl group, 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene] Phenol, 1,1,1-tris(p-hydroxyphenyl)ethane, etc.

作為萘醌二疊氮磺醯鹵,可以使用4-萘醌二疊氮磺醯鹵或5-萘醌二疊氮磺醯鹵。由4-萘醌二疊氮化合物得到的酯化合物(萘醌二疊氮化合物)由於在i線(波長365nm)區域具有吸收,所以適合i線曝光。另外,由5-萘醌二疊氮化合物得到的酯化合物(萘醌二疊氮化合物)由於在寬範圍的波長區域存在吸收,所以適合寬範圍的波長曝光。較佳根據曝光的波長選擇由4-萘醌二疊氮磺醯鹵得到的酯化合物或由5-萘醌二疊氮磺醯鹵得到的酯化合物。作為特佳的醌二疊氮化合物,可以列舉出4,4’-[1-[4-[1-[4-羥基苯基]-1-甲基乙基]苯基]伸乙基]聯苯酚(1.0mol)和1,2-萘醌二疊氮-5-磺醯氯(2.0mol)的縮合物。As the naphthoquinonediazidesulfonium halide, 4-naphthoquinonediazidesulfonium halide or 5-naphthoquinonediazidesulfonium halide can be used. The ester compound (naphthoquinone diazide compound) obtained from the 4-naphthoquinonediazide compound is suitable for i-line exposure because it has absorption in the i-line (wavelength 365 nm) region. Further, the ester compound (naphthoquinone diazide compound) obtained from the 5-naphthoquinonediazide compound is suitable for exposure over a wide range of wavelengths because of absorption in a wide range of wavelength regions. It is preferred to select an ester compound obtained from a 4-naphthoquinonediazidesulfonium halide or an ester compound obtained from a 5-naphthoquinonediazidesulfonium halide according to the wavelength of exposure. As a particularly preferred quinonediazide compound, 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene] A condensate of phenol (1.0 mol) and 1,2-naphthoquinonediazide-5-sulfonyl chloride (2.0 mol).

醌二疊氮化合物的分子量較佳為300~1500,更佳為350~1200。通過使醌二疊氮化合物的分子量為300以上,可以將形成的層間絕緣膜的透明性維持的很高。另一方面,通過使醌二疊氮化合物的分子量為1500以下,可以抑制正型感放射線性組成物的圖案形成能的降低。The molecular weight of the quinonediazide compound is preferably from 300 to 1,500, more preferably from 350 to 1200. When the molecular weight of the quinonediazide compound is 300 or more, the transparency of the formed interlayer insulating film can be maintained high. On the other hand, when the molecular weight of the quinonediazide compound is 1,500 or less, the reduction in pattern formation energy of the positive-type radiation-sensitive composition can be suppressed.

這些[B]成分可以單獨使用一種,或組合兩種以上使用。正型感放射線性組成物中的[B]成分的用量,相對於100質量份[A]成分較佳為5~100質量份,更佳為10~50質量份。通過使[B]成分的用量為5~100質量份,可以使放射線的照射部分和未照射的部分對作為顯影液的鹼水溶液的溶解度的差很大,形成圖案的性能良好,而且得到的層間絕緣膜的耐溶劑性也良好。These [B] components may be used alone or in combination of two or more. The amount of the component [B] in the positive radiation sensitive composition is preferably 5 to 100 parts by mass, more preferably 10 to 50 parts by mass, per 100 parts by mass of the component [A]. When the amount of the component [B] is 5 to 100 parts by mass, the difference in solubility between the irradiated portion and the unirradiated portion of the irradiated solution as the developing solution can be made large, and the pattern formation performance is good, and the obtained interlayer is obtained. The solvent resistance of the insulating film is also good.

[C]成分:由具有特定結構的單體形成的共聚物[C] component: a copolymer formed from a monomer having a specific structure

[C]成分是至少包含來自具有上述特定結構的聚合性化合物(c1)、聚合性化合物(c2)和聚合性化合物(c3)的結構單元的共聚物。在該正型感放射線性組成物中,共聚物[C]作為表面張力低下的性能高的表面活性劑的功能,即使在較少比例使用該物質時,也可以顯著提高形成的層間絕緣膜的表面平整性。The component [C] is a copolymer containing at least a structural unit derived from the polymerizable compound (c1), the polymerizable compound (c2), and the polymerizable compound (c3) having the above specific structure. In the positive-acting radiation-linear composition, the copolymer [C] functions as a surfactant having a high surface tension and a high performance, and the interlayer insulating film can be remarkably improved even when the substance is used in a small proportion. Surface flatness.

該正型感放射線性組成物中,共聚物[C]較佳進一步具有來自(c4)具有碳原子數為1~8的未取代的烷基酯基的聚合性不飽和化合物(以下,也簡稱為“聚合性化合物(c4)”)的結構單元;另外進而更佳具有來自(c5)在一分子中具有兩個以上的不飽和鍵的聚合性不飽和化合物(以下,也簡稱為“聚合性化合物(c5)”)的結構單元;特佳由含有上述聚合性化合物(c1)、聚合性化合物(c2)、聚合性化合物(c3)、聚合性化合物(c4)和聚合性化合物(c5)的組成物形成。In the positive-acting radiation-sensitive composition, the copolymer [C] preferably further has a polymerizable unsaturated compound derived from (c4) an unsubstituted alkyl ester group having 1 to 8 carbon atoms (hereinafter, also referred to as abbreviated as follows). It is a structural unit of the "polymerizable compound (c4)"); and further preferably has a polymerizable unsaturated compound derived from (c5) having two or more unsaturated bonds in one molecule (hereinafter, also simply referred to as "polymerizability" The structural unit of the compound (c5)"); particularly preferably, the polymerizable compound (c1), the polymerizable compound (c2), the polymerizable compound (c3), the polymerizable compound (c4), and the polymerizable compound (c5) are contained. The composition is formed.

上述式(1)中的基團-Cα H -是亞甲基或烷基亞甲基或者直鏈狀或支鏈狀的伸烷基。基團-Cα H -為非左右對稱時,其連接方向不限。基團-Cα H -的碳原子數α較佳為2~4。作為基團-Cα H -的具體例子,可以列舉出例如1,2-伸乙基、1,2-伸丙基、1,3-伸丙基、1,4-伸丁基等;它們之中,較佳為1,2-伸乙基或1,3-伸丙基,特佳為1,2-伸乙基。The group -C α H - in the above formula (1) is a methylene group or an alkylmethylene group or a linear or branched alkylene group. When the group -C α H - is not bilaterally symmetric, its connection direction is not limited. The number of carbon atoms α of the group -C α H - is preferably from 2 to 4. Specific examples of the group -C α H - may, for example, be 1,2-extended ethyl, 1,2-extended propyl, 1,3-extended propyl, 1,4-tert-butyl, and the like; Among them, a 1,2-extended ethyl group or a 1,3-propanyl group is preferred, and a 1,2-extended ethyl group is particularly preferred.

上述式(1)中的基團-Cβ F2β+1 是直鏈狀或支鏈狀的氟代烷基。基團-Cβ F2β+1 的碳原子數β是1~20,較佳為1~12,更佳為1~8,特佳為2~8。基團-Cβ F2β+1 較佳為直鏈狀的氟代烷基。The group -C β F 2β+1 in the above formula (1) is a linear or branched fluoroalkyl group. The group -C β F 2β+1 has a carbon number β of from 1 to 20, preferably from 1 to 12, more preferably from 1 to 8, and particularly preferably from 2 to 8. The group -C β F 2β+1 is preferably a linear fluoroalkyl group.

作為本發明中的聚合性化合物(c1)較佳為上述式(5)所示的化合物。作為化合物(c1)的具體例子,可以列舉出下述式(c1-1)和(c1-8)分別表示的化合物等。The polymerizable compound (c1) in the present invention is preferably a compound represented by the above formula (5). Specific examples of the compound (c1) include compounds represented by the following formulas (c1-1) and (c1-8).

CH2 =CHCOOC2 H4 C8 F17  (c1-1)CH 2 =CHCOOC 2 H 4 C 8 F 17 (c1-1)

CH2 =C(CH3 )COOC2 H4 C8 F17  (c1-2)CH 2 =C(CH 3 )COOC 2 H 4 C 8 F 17 (c1-2)

CH2 =CHCOOC2 H4 C6 F13  (c1-3)CH 2 =CHCOOC 2 H 4 C 6 F 13 (c1-3)

CH2 =C(CH3 )COOC2 H4 C6 F13  (c1-4)CH 2 =C(CH 3 )COOC 2 H 4 C 6 F 13 (c1-4)

CH2 =CHCOOC2 H4 C4 F9  (c1-5)CH 2 =CHCOOC 2 H 4 C 4 F 9 (c1-5)

CH2 =C(CH3 )COOC2 H4 C4 F9  (c1-6)CH 2 =C(CH 3 )COOC 2 H 4 C 4 F 9 (c1-6)

CH2 =CHCOOC2 H4 C2 F5  (c1-7)CH 2 =CHCOOC 2 H 4 C 2 F 5 (c1-7)

CH2 =C(CH3 )COOC2 H4 C2 F5  (c1-8)CH 2 =C(CH 3 )COOC 2 H 4 C 2 F 5 (c1-8)

上述式(2)中的基團-Cγ H -是直鏈狀或支鏈狀的伸烷基。基團-Cγ H -是非左右對稱時,其連接方向不限。作為基團-Cγ H2 γ-的具體例子,可以列舉出例如1,2-伸乙基和1,2-伸丙基,較佳為1,2-伸乙基。The group -C γ H - in the above formula (2) is a linear or branched alkylene group. When the group -C γ H - is not bilaterally symmetric, its connection direction is not limited. Specific examples of the group -C γ H 2 γ- include, for example, a 1,2-extended ethyl group and a 1,2-extended propyl group, preferably a 1,2-extended ethyl group.

化合物(c2)以上述式(2)中的重複單元數a的值不同的化合物的混合物使用。a的數平均值是1~30,較佳為2~20,特佳為4~12。在化合物(c2)中,分別是在γ為2時,使(甲基)丙烯酸和環氧乙烷反應進行合成,在γ為3時,使(甲基)丙烯酸和環氧丙烷反應合成。此時,相對於1mol(甲基)丙烯酸,導入的環氧乙烷或環氧丙烷的莫耳數根據a的值而異。該a值針對化合物(c2)可以通過求得凝膠滲透色譜法測定的聚苯乙烯換算的數平均分子量,從相對於1mol(甲基)丙烯酸導入的環氧乙烷或環氧丙烷加入的莫耳數,計算上述求得的數平均分子量的值求得。The compound (c2) is used as a mixture of compounds having different values of the number of repeating units a in the above formula (2). The average value of a is 1 to 30, preferably 2 to 20, and particularly preferably 4 to 12. In the compound (c2), when γ is 2, (meth)acrylic acid and ethylene oxide are reacted and synthesized, and when γ is 3, (meth)acrylic acid and propylene oxide are reacted and synthesized. At this time, the number of moles of the introduced ethylene oxide or propylene oxide differs depending on the value of a with respect to 1 mol of (meth)acrylic acid. The a value is a polystyrene-equivalent number average molecular weight which can be determined by gel permeation chromatography for the compound (c2), and is added from ethylene oxide or propylene oxide introduced with respect to 1 mol of (meth)acrylic acid. The number of ears was calculated by calculating the value of the number average molecular weight obtained above.

作為化合物(c2)適合使用商品。作為這種商品的例子,可以列舉出新中村化學工業(股份有限公司)製造的NK-ESTER M-40G、NK-ESTER M-90G、AM-90G;日油(股份有限公司)製造的Blenmer PME-200、PME-400、PME-550等。A commercial product is suitably used as the compound (c2). As an example of such a product, NK-ESTER M-40G, NK-ESTER M-90G, AM-90G manufactured by Shin-Nakamura Chemical Industry Co., Ltd.; Blenmer PME manufactured by Nippon Oil Co., Ltd. -200, PME-400, PME-550, etc.

上述化合物(c3)在上述式(3)中,分別存在多個R5 和R6 時,各R5 可以相同,也可以不同,各R6 可以相同,也可以不同。另外,在上述式(4)中,分別存在多個R10 和R11 時,各R10 可以相同,也可以不同,各R11 可以相同,也可以不同。另外,作為化合物(c3),較佳在上述式(3)中,R4 、R5 和R6 分別是碳原子數為1~20的烷基或苯基,且R7 和R8 分別是具有上述式(4)所示的基團的聚合性不飽和化合物。In the above compound (c3), when a plurality of R 5 and R 6 are respectively present in the above formula (3), each R 5 may be the same or different, and each of R 6 may be the same or different. Further, in the above formula (4), when a plurality of R 10 and R 11 are respectively present, each R 10 may be the same or different, and each of R 11 may be the same or different. Further, as the compound (c3), preferably, in the above formula (3), R 4 , R 5 and R 6 are each an alkyl group having 1 to 20 carbon atoms or a phenyl group, and R 7 and R 8 are respectively A polymerizable unsaturated compound having a group represented by the above formula (4).

作為化合物(c3)較佳地可以使用下述式(c3-1)所示的化合物。As the compound (c3), a compound represented by the following formula (c3-1) can be preferably used.

式(c3-1)中,RSi 是上述式(4)所示的基團,R15 是氫原子或甲基,d是1~3的整數。In the formula (c3-1), R Si is a group represented by the above formula (4), R 15 is a hydrogen atom or a methyl group, and d is an integer of 1 to 3.

作為化合物(c3-1)的具體例子,可以列舉出下述式(c3-1-1)、(c3-1-2)和(c3-1-3)分別表示的化合物等。Specific examples of the compound (c3-1) include compounds represented by the following formulas (c3-1-1), (c3-1-2), and (c3-1-3).

式(c3-1-1)中,Me是甲基,r、s和t分別是0~3的整數。In the formula (c3-1-1), Me is a methyl group, and r, s and t are each an integer of 0 to 3.

式(c3-1-2)中,Me以及r、s和t和上述式(c3-1-1)中同樣地定義。In the formula (c3-1-2), Me and r, s and t are defined in the same manner as in the above formula (c3-1-1).

式(c3-1-3)中,Me以及r、s和t和上述式(c3-1-1)中同樣地定義,Ph是苯基。In the formula (c3-1-3), Me and r, s and t are the same as defined in the above formula (c3-1-1), and Ph is a phenyl group.

作為化合物(c4)可以列舉出例如具有碳原子數為1~8的未取代的烷基酯基的(甲基)丙烯酸烷基酯等。作為化合物(c4)的具體例子,可以列舉出甲基丙烯酸正丁基酯、甲基丙烯酸甲酯、丙烯酸2-乙基己基酯等。The compound (c4) may, for example, be an alkyl (meth)acrylate having an unsubstituted alkyl ester group having 1 to 8 carbon atoms. Specific examples of the compound (c4) include n-butyl methacrylate, methyl methacrylate, and 2-ethylhexyl acrylate.

作為化合物(c5),可以列舉出例如1,4-丁二醇、聚合度為1~20的聚乙二醇、聚合度為1~20的聚丙二醇等的兩末端甲基丙烯酸酯化的化合物。作為化合物(c5)適合使用商品。作為這種商品的例子,可以列舉出新中村化學工業(株式會社)製造的NK-ESTER 1G、NK-ESTER 2G、NK-ESTER 3G、NK-ESTER 4G、NK-ESTER 9G、NK-ESTER 14G等。Examples of the compound (c5) include a terminal methacrylated compound such as 1,4-butanediol, polyethylene glycol having a polymerization degree of 1 to 20, and polypropylene glycol having a polymerization degree of 1 to 20. . A commercial product is suitably used as the compound (c5). Examples of such products include NK-ESTER 1G, NK-ESTER 2G, NK-ESTER 3G, NK-ESTER 4G, NK-ESTER 9G, NK-ESTER 14G, etc., manufactured by Shin-Nakamura Chemical Industry Co., Ltd. .

共聚物[C]在具有上述這種來自聚合性化合物(c1)、聚合性化合物(c2)和聚合性化合物(c3)的結構單元時,各聚合性化合物相對於這些聚合性化合物的總量的使用比例是,聚合性化合物(c1)是10~55質量%,聚合性化合物(c2)是10~50質量%,聚合性化合物(c3)是5~45質量%。When the copolymer [C] has a structural unit derived from the polymerizable compound (c1), the polymerizable compound (c2), and the polymerizable compound (c3) as described above, the total amount of each polymerizable compound relative to the polymerizable compound The use ratio is 10 to 55% by mass of the polymerizable compound (c1), 10 to 50% by mass of the polymerizable compound (c2), and 5 to 45% by mass of the polymerizable compound (c3).

共聚物[C]在進一步具有來自聚合性化合物(c4)的結構單元時,各聚合性化合物相對於這些聚合性化合物的總量的使用比例是,聚合性化合物(c1)是20~50質量%,聚合性化合物(c2)是15~40質量%,聚合性化合物(c3)是10~30質量%、聚合性化合物是20~35質量%。When the copolymer [C] further has a structural unit derived from the polymerizable compound (c4), the ratio of use of each polymerizable compound to the total amount of these polymerizable compounds is that the polymerizable compound (c1) is 20 to 50% by mass. The polymerizable compound (c2) is 15 to 40% by mass, the polymerizable compound (c3) is 10 to 30% by mass, and the polymerizable compound is 20 to 35% by mass.

共聚物[C]在進一步具有來自聚合性化合物(c5)的結構單元時,各聚合性化合物相對於這些聚合性化合物的總量的使用比例是,聚合性化合物(c1)是25~35質量%,聚合性化合物(c2)是20~30質量%,聚合性化合物(c3)是15~20質量%、聚合性化合物(c4)是25~35質量%,而且聚合性化合物(c5)是1~5質量%。用於形成共聚物[C]的化合物(c1)~(c5)分別可以單獨使用,也可以混合多種使用。When the copolymer [C] further has a structural unit derived from the polymerizable compound (c5), the ratio of use of each polymerizable compound to the total amount of these polymerizable compounds is that the polymerizable compound (c1) is 25 to 35% by mass. The polymerizable compound (c2) is 20 to 30% by mass, the polymerizable compound (c3) is 15 to 20% by mass, the polymerizable compound (c4) is 25 to 35% by mass, and the polymerizable compound (c5) is 1 to 1%. 5 mass%. The compounds (c1) to (c5) used to form the copolymer [C] may be used singly or in combination of two or more.

共聚物[C]的質量平均分子量(Mw)是5,000~25,000,較佳為10,000~25,000,特佳為15,000~25,000。共聚物[C]的分子量分布(Mw/Mn)(Mw相對於數平均分子量Mn的比例)較佳為1~10,更佳為2~4。The copolymer [C] has a mass average molecular weight (Mw) of 5,000 to 25,000, preferably 10,000 to 25,000, particularly preferably 15,000 to 25,000. The molecular weight distribution (Mw/Mn) of the copolymer [C] (the ratio of Mw to the number average molecular weight Mn) is preferably from 1 to 10, more preferably from 2 to 4.

共聚物[C]的製造方法沒有特別的限定,可以通過習知的方法,例如基於自由基聚合法、陽離子聚合法、陰離子聚合法等聚合機構,通過溶液聚合法、嵌段聚合法、乳液聚合法等製造。這些製造方法中,由於溶液中的自由基聚合法簡單,在工業上是較佳的。The method for producing the copolymer [C] is not particularly limited, and may be a solution polymerization method, a block polymerization method, or an emulsion polymerization method by a conventional method such as a polymerization mechanism such as a radical polymerization method, a cationic polymerization method, or an anionic polymerization method. Manufacturing by law. Among these production methods, since the radical polymerization method in the solution is simple, it is industrially preferable.

作為製造共聚物[C]時使用的聚合引發劑,可以列舉出例如過氧化苯甲醯、二醯基過氧化物等過氧化物;2,2'-偶氮二異丁腈、苯基偶氮三苯基己烷等偶氮化合物等。The polymerization initiator to be used in the production of the copolymer [C] may, for example, be a peroxide such as benzamidine peroxide or a dinonyl peroxide; 2,2'-azobisisobutyronitrile or a phenyl group An azo compound such as nitrogen triphenyl hexane.

共聚物[C]的製造可以在溶劑的存在下或不存在下的任意情形下進行,但是從作業性觀點來看,較佳在溶劑的存在下進行。作為上述溶劑,可以列舉出例如醇、酮、一元羧酸的烷基酯、醚、丙二醇及其酯、鹵代烴、芳烴、氟化惰性液體、其他極性溶劑等。The production of the copolymer [C] can be carried out in any case in the presence or absence of a solvent, but it is preferably carried out in the presence of a solvent from the viewpoint of workability. Examples of the solvent include alcohols, ketones, alkyl esters of monocarboxylic acids, ethers, propylene glycol and esters thereof, halogenated hydrocarbons, aromatic hydrocarbons, fluorinated inert liquids, and other polar solvents.

作為這些溶劑的例子是:作為上述醇,可以列舉出例如乙醇、異丙醇、正丁醇、異丁醇、三級丁醇等;作為上述酮,可以列舉出例如丙酮、甲乙酮、甲基異丁基酮、甲基胺基酮等;作為上述一元羧酸的烷基酯,可以列舉出例如乙酸甲酯、乙酸乙酯、乙酸丁酯、乳酸甲酯、乳酸乙酯、乳酸丁酯、2-氧代丙酸甲酯、2-氧代丙酸乙酯、2-氧代丙酸丙酯、2-氧代丙酸丁酯、2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-甲氧基丙酸丁酯等;作為上述醚,可以列舉出例如甲基溶纖素、溶纖素、丁基溶纖素、丁基卡必醇、乙基溶纖素乙酸酯、四氫呋喃、二烷等;作為上述丙二醇及其酯,可以列舉出例如丙二醇、丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚乙酸酯、丙二醇單丁基醚乙酸酯等;作為上述鹵代烴,可以列舉出例如1,1,1-三氯乙烷、氯仿等;作為上述芳烴,可以列舉出例如苯、甲苯、二甲苯等;作為上述氟化惰性液體,可以列舉出例如全氟辛烷、全氟三正丁基胺等;作為上述其他極性溶劑,可以列舉出例如二甲基甲醯胺、二甲基亞碸、N-甲基吡咯烷酮等。Examples of the solvent include, for example, ethanol, isopropanol, n-butanol, isobutanol, and tertiary butanol; and examples of the ketone include acetone, methyl ethyl ketone, and methyl ketone. Butyl ketone, methylamino ketone, etc.; as the alkyl ester of the above monocarboxylic acid, for example, methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, butyl lactate, 2 -methyl oxopropionate, ethyl 2-oxopropionate, propyl 2-oxopropionate, butyl 2-oxopropionate, methyl 2-methoxypropionate, 2-methoxy Ethyl propionate, propyl 2-methoxypropionate, butyl 2-methoxypropionate, etc.; examples of the ether include methyl cellosolve, cellulase, butyl cellosolve, and butyl group. Carbitol, ethyl cellosolve acetate, tetrahydrofuran, two An alkane or the like; examples of the propylene glycol and the ester thereof include propylene glycol, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and propylene glycol monobutyl ether acetate; Examples of the halogenated hydrocarbon include 1,1,1-trichloroethane and chloroform; and examples of the aromatic hydrocarbon include benzene, toluene, and xylene; and examples of the fluorinated inert liquid include For example, perfluorooctane, perfluorotri-n-butylamine, and the like; examples of the other polar solvent include dimethylformamide, dimethylhydrazine, and N-methylpyrrolidone.

這些溶劑可以單獨使用1種,可以將兩種以上適當混合使用。These solvents may be used alone or in combination of two or more.

製造共聚物[C]時,根據需要,可以進一步使用月桂基硫醇、2-巰基乙醇、硫代乙酸乙酯、硫代乙酸辛酯等鏈轉移劑。When the copolymer [C] is produced, a chain transfer agent such as lauryl mercaptan, 2-mercaptoethanol, ethyl thioacetate or octyl thioacetate may be further used as needed.

該正型感放射線性組成物中的共聚物[C]的使用比例是相對於100質量份[A]成分,較佳為0.01~3質量份,更佳為0.05~2質量份。通過以這種比例使用[C]成分,可以形成具有無塗布不勻的高度平整性的層間絕緣膜。The use ratio of the copolymer [C] in the positive radiation sensitive composition is preferably 0.01 to 3 parts by mass, more preferably 0.05 to 2 parts by mass, per 100 parts by mass of the component [A]. By using the [C] component in such a ratio, it is possible to form an interlayer insulating film having a high level of flatness without coating unevenness.

其他任選成分Other optional ingredients

本發明的正型感放射線性組成物除了上述的[A]~[C]成分以外,在不損害所希望的效果的範圍內,根據需要可以含有[D]感熱性酸產生劑或感熱性鹼產生劑、[E]脫水劑等其他任選成分。The positive-type radiation-sensitive composition of the present invention may contain a [D] thermosensitive acid generator or a sensible base as needed, in addition to the above-mentioned [A] to [C] components, within a range that does not impair the desired effect. Other optional ingredients such as a generating agent, [E] dehydrating agent.

[D]成分的感熱性酸產生劑或者感熱性鹼產生劑定義為受熱可以放出酸性活性物質或者鹼性活性物質的化合物,該酸性活性物質或鹼性活性物質起到作為使[A]成分的矽氧烷聚合物(較佳為上述式(7)所示的水解性矽烷化合物的水解縮合物)自身縮合、硬化時的催化劑的作用。通過使用這種[D]成分的化合物,可以進一步提高得到的層間絕緣膜的耐熱性和耐溶劑性。另外,作為[D]成分的感熱性酸產生劑或鹼產生劑,較佳為具有在正型感放射線性組成物的塗膜形成步驟中的比較低的溫度(例如70~120℃)的預烘焙時不會放出酸性活性物質或鹼性活性物質,在顯影後的加熱步驟中的比較高的溫度(例如120~250℃)的後烘焙時,放出酸性活性物質或鹼性活性物質的性質的物質。The sensible acid generator or the sensible alkali generator of the component [D] is defined as a compound which can release an acidic active material or a basic active material by heating, and the acidic active material or the basic active material functions as the component [A]. The action of the catalyst at the time of self-condensation and hardening of the siloxane polymer (preferably, the hydrolysis-condensation product of the hydrolyzable decane compound represented by the above formula (7)). By using such a compound of the [D] component, the heat resistance and solvent resistance of the obtained interlayer insulating film can be further improved. Further, the heat-sensitive acid generator or the alkali-generating agent as the component [D] preferably has a relatively low temperature (for example, 70 to 120 ° C) in the coating film forming step of the positive-type radiation-sensitive composition. The acidic active material or the basic active material is not released during baking, and the properties of the acidic active material or the basic active material are released during post-baking at a relatively high temperature (for example, 120 to 250 ° C) in the heating step after development. substance.

作為[D]成分感熱性酸產生劑,可以列舉出例如二苯基錪鹽、三苯基鋶鹽、鋶鹽、苯并噻唑鎓鹽、銨鹽、鏻鹽、四氫噻吩鎓鹽等鎓鹽、磺醯亞胺化合物等。Examples of the heat-sensitive acid generator of the component [D] include a phosphonium salt such as a diphenylsulfonium salt, a triphenylsulfonium salt, a phosphonium salt, a benzothiazolium salt, an ammonium salt, a phosphonium salt or a tetrahydrothiophene salt. , sulfonium imine compounds, and the like.

作為二苯基錪鹽的例子,可以列舉出二苯基錪四氟硼酸鹽、二苯基錪六氟磷酸鹽、二苯基錪六氟砷酸鹽、二苯基錪三氟甲磺酸鹽、二苯基錪三氟乙酸鹽、二苯基錪-對甲苯磺酸鹽、二苯基錪丁基三(2,6-二氟代苯基)硼酸鹽、4-甲氧基苯基-苯基錪四氟硼酸鹽、雙(4-三級丁基苯基)錪四氟硼酸鹽、雙(4-三級丁基苯基)錪六氟砷酸鹽、雙(4-三級丁基苯基)錪三氟甲磺酸鹽、雙(4-三級丁基苯基)錪三氟乙酸鹽、雙(4-三級丁基苯基)錪-對甲苯磺酸鹽、雙(4-三級丁基苯基)錪樟腦磺酸鹽等。Examples of the diphenylphosphonium salt include diphenylphosphonium tetrafluoroborate, diphenylphosphonium hexafluorophosphate, diphenylphosphonium hexafluoroarsenate, and diphenylsulfonium trifluoromethanesulfonate. , diphenylphosphonium trifluoroacetate, diphenylphosphonium-p-toluenesulfonate, diphenylphosphonium butyl tris(2,6-difluorophenyl)borate, 4-methoxyphenyl- Phenylhydrazine tetrafluoroborate, bis(4-tributylphenyl)phosphonium tetrafluoroborate, bis(4-tributylphenyl)phosphonium hexafluoroarsenate, bis(4-tertiary Phenyl) fluorinated trifluoromethanesulfonate, bis(4-tributylphenyl)phosphonium trifluoroacetate, bis(4-tributylphenyl)phosphonium-p-toluenesulfonate, double 4-tertiary butylphenyl) camphorsulfonate and the like.

作為三苯基鋶鹽的例子,可以列舉出三苯基鋶三氟甲磺酸鹽、三苯基鋶樟腦磺酸鹽、三苯基鋶四氟硼酸鹽、三苯基鋶三氟乙酸鹽、三苯基鋶-對甲苯磺酸鹽、三苯基鋶丁基三(2,6-二氟代苯基)硼酸鹽等。Examples of the triphenylsulfonium salt include triphenylsulfonium trifluoromethanesulfonate, triphenyl camphorsulfonate, triphenylsulfonium tetrafluoroborate, and triphenylsulfonium trifluoroacetate. Triphenylphosphonium-p-toluenesulfonate, triphenylsulfonylbutyltris(2,6-difluorophenyl)borate, and the like.

作為鋶鹽的例子,可以列舉出烷基鋶鹽、苄基鋶鹽、二苄基鋶鹽、取代的苄基鋶鹽等。Examples of the onium salt include an alkyl phosphonium salt, a benzyl phosphonium salt, a dibenzyl phosphonium salt, a substituted benzyl phosphonium salt, and the like.

作為這些鋶鹽,可以分別列舉出:作為烷基鋶鹽是例如4-乙醯氧基苯基二甲基鋶六氟代銻酸鹽、4-乙醯氧基苯基二甲基鋶六氟砷酸鹽、二甲基-4-(苄基氧基羰基氧基)苯基鋶六氟代銻酸鹽、二甲基-4-(苯甲醯基氧基)苯基鋶六氟代銻酸鹽、二甲基-4-(苯甲醯基氧基)苯基鋶六氟砷酸鹽、二甲基-3-氯代-4-乙醯氧基苯基鋶六氟代銻酸鹽等;作為苄基鋶鹽是例如苄基-4-羥基苯基甲基鋶六氟代銻酸鹽、苄基-4-羥基苯基甲基鋶六氟代磷酸鹽、4-乙醯氧基苯基苄基甲基鋶六氟代銻酸鹽、苄基-4-甲氧基苯基甲基鋶六氟代銻酸鹽、苄基-2-甲基-4-羥基苯基甲基鋶六氟代銻酸鹽、苄基-3-氯代-4-羥基苯基甲基鋶六氟砷酸鹽、4-甲氧基苄基-4-羥基苯基甲基鋶六氟代磷酸鹽等;作為二苄基鋶鹽是例如二苄基-4-羥基苯基鋶六氟代銻酸鹽、二苄基-4-羥基苯基鋶六氟代磷酸鹽、4-乙醯氧基苯基二苄基鋶六氟代銻酸鹽、二苄基-4-甲氧基苯基鋶六氟代銻酸鹽、二苄基-3-氯代-4-羥基苯基鋶六氟砷酸鹽、二苄基-3-甲基-4-羥基-5-三級丁基苯基鋶六氟代銻酸鹽、苄基-4-甲氧基苄基-4-羥基苯基鋶六氟代磷酸鹽等;作為取代的苄基鋶鹽是例如對氯代苄基-4-羥基苯基甲基鋶六氟代銻酸鹽、對硝基苄基-4-羥基苯基甲基鋶六氟代銻酸鹽、對氯代苄基-4-羥基苯基甲基鋶六氟代磷酸鹽、對硝基苄基-3-甲基-4-羥基苯基甲基鋶六氟代銻酸鹽、3,5-二氯代苄基-4-羥基苯基甲基鋶六氟代銻酸鹽、鄰氯代苄基-3-氯代-4-羥基苯基甲基鋶六氟代銻酸鹽等。As these onium salts, there may be mentioned, for example, as an alkyl phosphonium salt, for example, 4-ethenyloxyphenyldimethylsulfonium hexafluoroantimonate, 4-ethenyloxyphenyldimethylsulfonium hexafluoride. Arsenate, dimethyl-4-(benzyloxycarbonyloxy)phenylphosphonium hexafluoroantimonate, dimethyl-4-(benzylideneoxy)phenylphosphonium hexafluoroantimony Acid salt, dimethyl-4-(benzylideneoxy)phenylphosphonium hexafluoroarsenate, dimethyl-3-chloro-4-ethoxycarbonylphenylphosphonium hexafluoroantimonate And as the benzyl sulfonium salt is, for example, benzyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, benzyl-4-hydroxyphenylmethylphosphonium hexafluorophosphate, 4-ethenyloxy Phenylbenzyl methyl hydrazine hexafluoroantimonate, benzyl-4-methoxyphenylmethyl hexafluoroantimonate, benzyl-2-methyl-4-hydroxyphenylmethyl hydrazine Hexafluoroantimonate, benzyl-3-chloro-4-hydroxyphenylmethylphosphonium hexafluoroarsenate, 4-methoxybenzyl-4-hydroxyphenylmethylphosphonium hexafluorophosphate And as the dibenzyl sulfonium salt is, for example, dibenzyl-4-hydroxyphenylphosphonium hexafluoroantimonate, dibenzyl-4-hydroxyphenylphosphonium hexafluorophosphate, 4-ethenyloxybenzene Base two Benzyl hydrazine hexafluoroantimonate, dibenzyl-4-methoxyphenylphosphonium hexafluoroantimonate, dibenzyl-3-chloro-4-hydroxyphenylphosphonium hexafluoroarsenate, Dibenzyl-3-methyl-4-hydroxy-5-tert-butylphenylphosphonium hexafluoroantimonate, benzyl-4-methoxybenzyl-4-hydroxyphenylphosphonium hexafluorophosphate a salt or the like; as a substituted benzyl sulfonium salt is, for example, p-chlorobenzyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, p-nitrobenzyl-4-hydroxyphenylmethylhydrazine hexafluoro Citrate, p-chlorobenzyl-4-hydroxyphenylmethylphosphonium hexafluorophosphate, p-nitrobenzyl-3-methyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, 3,5-Dichlorobenzyl-4-hydroxyphenylmethylhydrazine hexafluoroantimonate, o-chlorobenzyl-3-chloro-4-hydroxyphenylmethylphosphonium hexafluoroantimonate Wait.

作為苯并噻唑鎓鹽的例子,可以列舉出3-苄基苯并噻唑鎓六氟代銻酸鹽、3-苄基苯并噻唑鎓六氟代磷酸鹽、3-苄基苯并噻唑鎓四氟硼酸鹽、3-(對甲氧基苄基)苯并噻唑鎓六氟代銻酸鹽、3-苄基-2-甲基硫代苯并噻唑鎓六氟代銻酸鹽、3-苄基-5-氯代苯并噻唑鎓六氟代銻酸鹽等。Examples of the benzothiazolium salt include 3-benzylbenzothiazolium hexafluoroantimonate, 3-benzylbenzothiazolium hexafluorophosphate, and 3-benzylbenzothiazolium tetra Fluoroborate, 3-(p-methoxybenzyl)benzothiazolium hexafluoroantimonate, 3-benzyl-2-methylthiobenzothiazolium hexafluoroantimonate, 3-benzyl 5--5-chlorobenzothiazolium hexafluoroantimonate.

作為四氫噻吩鎓鹽的例子,可以列舉出1-(4-正丁氧基萘-1-基)四氫噻吩鎓三氟代甲磺酸鹽、1-(4-正丁氧基萘-1-基)四氫噻吩鎓九氟代正丁磺酸鹽、1-(4-正丁氧基萘-1-基)四氫噻吩鎓-1,1,2,2-四氟代-2-(降冰片烷-2-基)乙磺酸鹽、1-(4-正丁氧基萘-1-基)四氫噻吩鎓-2-(5-三級丁氧基羰基氧基二環[2.2.1]庚-2-基)-1,1,2,2-四氟代乙磺酸鹽、1-(4-正丁氧基萘-1-基)四氫噻吩鎓-2-(6-三級丁氧基羰基氧基二環[2.2.1]庚-2-基)-1,1,2,2-四氟代乙磺酸鹽、1-(4,7-二丁氧基-1-萘基)四氫噻吩鎓三氟甲磺酸鹽等。Examples of the tetrahydrothiophene phosphonium salt include 1-(4-n-butoxynaphthalen-1-yl)tetrahydrothiophene trifluoromethanesulfonate and 1-(4-n-butoxynaphthalene). 1-yl)tetrahydrothiophene nonafluorobutanesulfonate, 1-(4-n-butoxynaphthalen-1-yl)tetrahydrothiophene-1,1,2,2-tetrafluoro-2 -(norbornane-2-yl)ethanesulfonate, 1-(4-n-butoxynaphthalen-1-yl)tetrahydrothiophene-2-(5-tertiarybutoxycarbonyloxybicyclo) [2.2.1]Hept-2-yl)-1,1,2,2-tetrafluoroethanesulfonate, 1-(4-n-butoxynaphthalen-1-yl)tetrahydrothiophene-2- (6-tertiary butoxycarbonyloxybicyclo[2.2.1]hept-2-yl)-1,1,2,2-tetrafluoroethanesulfonate, 1-(4,7-dibutyl) Oxy-1-naphthyl)tetrahydrothiophene trifluoromethanesulfonate and the like.

作為磺醯亞胺化合物的例子,可以列舉出N-(三氟甲基磺醯氧基)琥珀醯亞胺(商品名“SI-105”(midori-kagaku股份有限公司製造))、N-(樟腦磺醯氧基)琥珀醯亞胺(商品名“SI-106”(midori-kagaku股份有限公司製造))、N-(4-甲基苯基磺醯氧基)琥珀醯亞胺(商品名“SI-101”(midori-kagaku股份有限公司製造))、N-(2-三氟甲基苯基磺醯氧基)琥珀醯亞胺、N-(4-氟代苯基磺醯氧基)琥珀醯亞胺、N-(三氟甲基磺醯氧基)鄰苯二甲醯亞胺、N-(樟腦磺醯氧基)鄰苯二甲醯亞胺、N-(2-三氟甲基苯基磺醯氧基)鄰苯二甲醯亞胺、N-(2-氟代苯基磺醯氧基)鄰苯二甲醯亞胺、N-(三氟甲基磺醯氧基)二苯基馬來醯亞胺(商品名“PI-105”(midori-kagaku股份有限公司))、N-(樟腦磺醯氧基)二苯基馬來醯亞胺、4-(甲基苯基磺醯氧基)二苯基馬來醯亞胺、N-(2-三氟甲基苯基磺醯氧基)二苯基馬來醯亞胺、N-(4-氟代苯基磺醯氧基)二苯基馬來醯亞胺、N-(4-氟代苯基磺醯氧基)二苯基馬來醯亞胺、N-(苯基磺醯氧基)二環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺(商品名“NDI-100”(midori-kagaku股份有限公司製造))、N-(4-甲基苯基磺醯氧基)二環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺(商品名“NDI-101”(midori-kagaku股份有限公司製造))、N-(三氟甲磺醯氧基)二環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺(商品名“NDI-105”(midori-kagaku股份有限公司製造))、N-(九氟代丁磺醯氧基)二環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺(商品名“NDI-109”(midori-kagaku股份有限公司製造))、N-(樟腦磺醯氧基)二環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺(商品名”NDI-106”(midori-kagaku股份有限公司製造))、N-(樟腦磺醯氧基)-7-氧雜二環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(三氟甲基磺醯氧基)-7-氧雜二環[2.2.1]庚5-烯-2,3-二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)二環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)-7-氧雜二環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(2-三氟甲基苯基磺醯氧基)二環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(2-三氟甲基苯基磺醯氧基)-7-氧雜二環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-氟代苯基磺醯氧基)二環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-氟代苯基磺醯氧基)-7-氧雜二環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(三氟甲基磺醯氧基)二環[2.2.1]庚烷-5,6-氧代-2,3-二羧基醯亞胺、N-(樟腦磺醯氧基)二環[2.2.1]庚烷-5,6-氧代-2,3-二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)二環[2.2.1]庚烷-5,6-氧代-2,3-二羧基醯亞胺、N-(2-三氟甲基苯基磺醯氧基)二環[2.2.1]庚烷-5,6-氧代-2,3-二羧基醯亞胺、N-(4-氟代苯基磺醯氧基)二環[2.2.1]庚烷-5,6-氧代-2,3-二羧基醯亞胺、N-(三氟甲基磺醯氧基)萘基二羧基醯亞胺(商品名“NAI-105”(midori-kagaku股份有限公司製造))、N-(樟腦磺醯氧基)萘基二羧基醯亞胺(商品名“NAI-106”(midori-kagaku股份有限公司製造))、N-(4-甲基苯基磺醯氧基)萘基二羧基醯亞胺(商品名“NAI-101”(midori-kagaku股份有限公司製造))、N-(苯基磺醯氧基)萘基二羧基醯亞胺(商品名“NAI-100”(midori-kagaku股份有限公司製造))、N-(2-三氟甲基苯基磺醯氧基)萘基二羧基醯亞胺、N-(4-氟代苯基磺醯氧基)萘基二羧基醯亞胺、N-(五氟乙基磺醯氧基)萘基二羧基醯亞胺、N-(七氟丙基磺醯氧基)萘基二羧基醯亞胺、N-(九氟代丁基磺醯氧基)萘基二羧基醯亞胺(商品名“NAI-109”(midori-kagaku股份有限公司製造))、N-(乙基磺醯氧基)萘基二羧基醯亞胺、N-(丙基磺醯氧基)萘基二羧基醯亞胺、N-(丁基磺醯氧基)萘基二羧基醯亞胺(商品名“NAI-1004”(midori-kagaku股份有限公司製造))、N-(戊基磺醯氧基)萘基二羧基醯亞胺、N-(己基磺醯氧基)萘基二羧基醯亞胺、N-(庚基磺醯氧基)萘基二羧基醯亞胺、N-(辛基磺醯氧基)萘基二羧基醯亞胺、N-(壬基磺醯氧基)萘基二羧基醯亞胺等。Examples of the sulfonimide compound include N-(trifluoromethylsulfonyloxy) succinimide (trade name "SI-105" (manufactured by midori-kagaku Co., Ltd.)), N-( Camphor sulfonate oxy) succinimide (trade name "SI-106" (manufactured by midori-kagaku Co., Ltd.)), N-(4-methylphenylsulfonyloxy) amber ylide (trade name) "SI-101" (manufactured by midori-kagaku Co., Ltd.), N-(2-trifluoromethylphenylsulfonyloxy) succinimide, N-(4-fluorophenylsulfonyloxy) Amber quinone imine, N-(trifluoromethylsulfonyloxy) phthalimide, N-(camphorsulfonyloxy) phthalimide, N-(2-trifluoro) Methylphenylsulfonyloxy) phthalimide, N-(2-fluorophenylsulfonyloxy) phthalimide, N-(trifluoromethylsulfonyloxy) Diphenylmaleimide (trade name "PI-105" (midori-kagaku Co., Ltd.)), N-(camphorsulfonyloxy) diphenylmaleimide, 4-(methyl Phenylsulfonyloxy)diphenylmaleimide, N-(2-trifluoromethylphenylsulfonyloxy)diphenylmaleimide, N-(4-fluorophenyl Sulfonyloxy) Kimalyimide, N-(4-fluorophenylsulfonyloxy)diphenylmaleimide, N-(phenylsulfonyloxy)bicyclo[2.2.1]hept-5 -ene-2,3-dicarboxy quinone imine (trade name "NDI-100" (manufactured by midori-kagaku Co., Ltd.)), N-(4-methylphenylsulfonyloxy)bicyclo[2.2. 1] G-5-ene-2,3-dicarboxy quinone imine (trade name "NDI-101" (manufactured by midori-kagaku Co., Ltd.)), N-(trifluoromethanesulfonyloxy)bicyclo[ 2.2.1] hept-5-ene-2,3-dicarboxy quinone imine (trade name "NDI-105" (manufactured by midori-kagaku Co., Ltd.)), N-(nonafluorobutanesulfonyloxy) Bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyindenine (trade name "NDI-109" (manufactured by midori-kagaku Co., Ltd.)), N-(camphorsulfonyloxy) Bicyclo [2.2.1] hept-5-ene-2,3-dicarboxy quinone imine (trade name "NDI-106" (manufactured by midori-kagaku Co., Ltd.)), N-(camphorsulfonyloxy) -7-oxabicyclo[2.2.1]hept-5-ene-2,3-dicarboxy quinone imine, N-(trifluoromethylsulfonyloxy)-7-oxabicyclo[2.2. 1]Hept-5-ene-2,3-dicarboxy quinone imine, N-(4-methylphenylsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyl Yttrium , N-(4-methylphenylsulfonyloxy)-7-oxabicyclo[2.2.1]hept-5-ene-2,3-dicarboxyarminemine, N-(2-trifluoro Methylphenylsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyindolimine, N-(2-trifluoromethylphenylsulfonyloxy)-7 -oxabicyclo[2.2.1]hept-5-ene-2,3-dicarboxyarsenine, N-(4-fluorophenylsulfonyloxy)bicyclo[2.2.1]hept-5 -ene-2,3-dicarboxy quinone imine, N-(4-fluorophenylsulfonyloxy)-7-oxabicyclo[2.2.1]hept-5-ene-2,3-di Carboxylimine, N-(trifluoromethylsulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxo-2,3-dicarboxyarmine, N-(camphorsulfonate) Oxy)bicyclo[2.2.1]heptane-5,6-oxo-2,3-dicarboxyindenine, N-(4-methylphenylsulfonyloxy)bicyclo[2.2.1 Heptane-5,6-oxo-2,3-dicarboxyindenine, N-(2-trifluoromethylphenylsulfonyloxy)bicyclo[2.2.1]heptane-5,6 -oxo-2,3-dicarboxy quinone imine, N-(4-fluorophenylsulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxo-2,3-di Carboxylimine, N-(trifluoromethylsulfonyloxy)naphthyldicarboxyphthalimide (trade name "NAI-105" (manufactured by midori-kagaku Co., Ltd.)), N-(camphorsulfonate) base) Dicarboxy quinone imine (trade name "NAI-106" (manufactured by midori-kagaku Co., Ltd.)), N-(4-methylphenylsulfonyloxy)naphthyldicarboxy quinone imine (trade name " NAI-101" (manufactured by midori-kagaku Co., Ltd.), N-(phenylsulfonyloxy)naphthyldicarboxy quinone imine (trade name "NAI-100" (manufactured by midori-kagaku Co., Ltd.)) , N-(2-trifluoromethylphenylsulfonyloxy)naphthyldicarboxy quinone imine, N-(4-fluorophenylsulfonyloxy)naphthyldicarboxy quinone imine, N-( Pentafluoroethylsulfonyloxy)naphthyldicarboxy quinone imine, N-(heptafluoropropylsulfonyloxy)naphthyldicarboxy quinone imine, N-(nonafluorobutoxysulfonyloxy) Naphthyl dicarboxy quinone imine (trade name "NAI-109" (manufactured by midori-kagaku Co., Ltd.)), N-(ethylsulfonyloxy)naphthyldicarboxy quinone imine, N-(propyl sulfonate)醯oxy)naphthyldicarboxy quinone imine, N-(butylsulfonyloxy)naphthyldicarboxy quinone imine (trade name "NAI-1004" (manufactured by midori-kagaku Co., Ltd.)), N- (pentylsulfonyloxy)naphthyldicarboxy quinone imine, N-(hexylsulfonyloxy)naphthyldicarboxy quinone imine, N-(heptylsulfonate) ) Acyl naphthyl-dicarboxy imide, N- (Sulfonic group-octyl) acyl naphthyl-dicarboxy imide, N- (nonyl sulfonylurea yloxy) naphthyl-dicarboxy-acyl imine.

這些感熱性酸產生劑中,從提高所得的層間絕緣膜的耐熱性和耐溶劑性方面出發,較佳使用三苯基鋶鹽、鋶鹽、苯并噻唑鎓鹽和四氫噻吩鎓鹽。它們之中,特佳使用三苯基鋶三氟甲磺酸鹽、三苯基鋶樟腦磺酸鹽、4-乙醯氧基苯基二甲基鋶六氟砷酸鹽、苄基-4-羥基苯基甲基鋶六氟銻酸鹽、4-乙醯氧基苯基苄基甲基鋶六氟銻酸鹽、二苄基-4-羥基苯基鋶六氟銻酸鹽、4-乙醯氧基苯基苄基甲基鋶六氟銻酸鹽、3-苄基苯并噻唑鎓六氟銻酸鹽、苄基-4-羥基苯基甲基鋶六氟磷酸鹽、1-(4,7-二丁氧基-1-萘基)四氫噻吩鎓三氟甲磺酸鹽、N-(三氟甲基磺醯氧基)萘基二羧基醯亞胺。Among these heat-sensitive acid generators, triphenylsulfonium salts, phosphonium salts, benzothiazolium salts and tetrahydrothiophene phosphonium salts are preferably used from the viewpoint of improving the heat resistance and solvent resistance of the obtained interlayer insulating film. Among them, triphenylsulfonium trifluoromethanesulfonate, triphenyl camphorsulfonate, 4-ethenyloxyphenyldimethylsulfonium hexafluoroarsenate, benzyl-4- are particularly preferred. Hydroxyphenylmethyl hydrazine hexafluoroantimonate, 4-ethoxycarbonylphenylbenzylmethyl hexafluoroantimonate, dibenzyl-4-hydroxyphenyl hexafluoroantimonate, 4-B Nonyloxyphenylbenzylmethylphosphonium hexafluoroantimonate, 3-benzylbenzothiazolium hexafluoroantimonate, benzyl-4-hydroxyphenylmethylphosphonium hexafluorophosphate, 1-(4 , 7-dibutoxy-1-naphthyl)tetrahydrothiophene fluorene triflate, N-(trifluoromethylsulfonyloxy)naphthyldicarboxy quinone imine.

作為[D]成分的感熱性鹼產生劑的例子,可以列舉出2-硝基苄基環己基胺基甲酸酯、[[(2,6-二硝基苄基)氧基]羰基]環己基胺、N-(2-硝基苄基氧基羰基)吡咯烷、雙[[(2-硝基苄基)氧基]羰基]己烷-1,6-二胺、三苯基甲醇、O-胺基甲醯基羥基醯胺、O-胺基甲醯基肟、4-(甲基硫代苯甲醯基)-1-甲基-1-嗎啉代乙烷、(4-嗎啉代苯甲醯基)-1-苄基-1-二甲基胺基丙烷、2-苄基-2-二甲基胺基-1-(4-嗎啉代苯基)-丁酮、六胺鈷(III)三(三苯基甲基硼酸鹽)等。這些[D]成分的感熱性鹼產生劑中,從提高所得的層間絕緣膜的耐熱性的觀點來看,特佳為2-硝基苄基環己基胺基甲酸酯和O-胺基甲醯基羥基醯胺。Examples of the thermosensitive base generator as the component [D] include 2-nitrobenzylcyclohexylcarbamate and [[(2,6-dinitrobenzyl)oxy]carbonyl] ring. Hexylamine, N-(2-nitrobenzyloxycarbonyl)pyrrolidine, bis[[(2-nitrobenzyl)oxy]carbonyl]hexane-1,6-diamine, triphenylmethanol, O-aminomethionyl hydroxy decylamine, O-aminomethyl decyl hydrazine, 4-(methylthiobenzimidyl)-1-methyl-1-morpholinoethane, (4-? Oleinobenzylidene)-1-benzyl-1-dimethylaminopropane, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone, Hexaamine cobalt (III) tris(triphenylmethylborate) and the like. Among these heat-sensitive alkali generating agents of the component [D], from the viewpoint of improving the heat resistance of the obtained interlayer insulating film, 2-nitrobenzylcyclohexylcarbamate and O-amino group A are particularly preferable. Mercaptohydroxyamine.

[D]成分的感熱性酸產生劑或者感熱性鹼產生劑可以使用酸或鹼中的任意一種,可以單獨使用一種,也可以將兩種以上混合使用。在使用[D]成分時的量,相對於100質量份[A]成分,較佳為0.1質量份~20質量份,更佳為1質量份~10質量份。通過使[D]成分的用量為0.1質量份~20質量份,可以得到形成的層間絕緣膜的耐熱性和耐溶劑性優異的正型感放射線性組成物,而且可以防止塗膜形成步驟中產生析出物,容易形成塗膜。The heat-sensitive acid generator or the heat-sensitive base generator of the component [D] may be used alone or in combination of two or more. The amount of the component [D] is preferably 0.1 parts by mass to 20 parts by mass, more preferably 1 part by mass to 10 parts by mass, per 100 parts by mass of the component [A]. When the amount of the component [D] is from 0.1 part by mass to 20 parts by mass, a positive-type radiation-sensitive composition excellent in heat resistance and solvent resistance of the formed interlayer insulating film can be obtained, and generation of the coating film formation step can be prevented. The precipitate is easy to form a coating film.

[E]成分的脫水劑定義為藉由化學反應將水轉變為水以外的物質,或者藉由物理吸附或包合網住水的物質。通過在該正型感放射線性組成物中任選含有[E]脫水劑,可以降低從外部環境侵入的水分。因此,藉由使用[E]脫水劑,可以降低組成物中的水分,從而提高組成物的保存穩定性。作為這種[E]脫水劑,較佳使用選自羧酸酯、縮醛類(包含酮縮醇類)和羧酸酐構成的群組中的至少一種化合物。The dehydrating agent of the component [E] is defined as a substance which converts water into a substance other than water by a chemical reaction, or a material which occludes water by physical adsorption or inclusion. By optionally containing the [E] dehydrating agent in the positive-acting radiation-linear composition, moisture intruding from the external environment can be reduced. Therefore, by using the [E] dehydrating agent, the moisture in the composition can be lowered, thereby improving the storage stability of the composition. As such [E] dehydrating agent, at least one compound selected from the group consisting of a carboxylate, an acetal (including a ketal) and a carboxylic anhydride is preferably used.

作為羧酸酯的較佳的例子,可以列舉出原羧酸酯、羧酸甲矽烷基酯等。作為原羧酸酯的具體例子,可以列舉出原甲酸甲酯、原甲酸乙酯、原甲酸丙酯、原甲酸丁酯、原乙酸甲酯、原乙酸乙酯、原乙酸丙酯、原乙酸丁酯、原丙酸甲酯、原丙酸乙酯基等。另外,這些原羧酸酯中,特佳原甲酸甲酯等原甲酸酯。作為羧酸甲矽烷基酯的具體例子,可以列舉出乙酸三甲基甲矽烷基酯、乙酸三丁基甲矽烷基酯、甲酸三甲基甲矽烷基酯、草酸三甲基甲矽烷基酯等。Preferable examples of the carboxylic acid ester include an orthocarboxylic acid ester, a carboxylic acid methyl sulfonyl ester, and the like. Specific examples of the orthocarboxylic acid esters include methyl orthoformate, ethyl orthoformate, propyl orthoformate, butyl orthoformate, methyl orthoacetate, ethyl orthoacetate, propyl orthoacetate, and sodium orthoacetate. Ester, methyl orthopropionate, ethyl orthopropionate, and the like. Further, among these orthocarboxylic acid esters, orthoformates such as methyl orthoformate are particularly preferred. Specific examples of the mercaptoalkyl carboxylate include trimethylformamidine acetate, tributylcarbamyl acetate, trimethylformamidinecarboxylate, and trimethylformamidate oxalate.

作為縮醛類的較佳的例子,可以列舉出酮類和醇的反應物、酮類和二元醇的反應物、烯酮甲矽烷基縮醛類。作為酮類和醇的反應物的具體例子,可以列舉出二甲基縮醛、二乙基縮醛、二丙基縮醛等。Preferable examples of the acetal include a reaction product of a ketone and an alcohol, a reaction product of a ketone and a glycol, and a ketene alkyl acetal. Specific examples of the reactant of the ketone and the alcohol include dimethyl acetal, diethyl acetal, and dipropyl acetal.

作為羧酸酐的較佳的例子,可以列舉出甲酸酐、乙酸酐、琥珀酸酐、馬來酸酐、鄰苯二甲酸酐、苯甲酸酐、乙酸苯甲酸酐等。這些羧酸酐中,在脫水效果方面,較佳為乙酸酐和琥珀酸酐。Preferable examples of the carboxylic acid anhydride include acetic anhydride, acetic anhydride, succinic anhydride, maleic anhydride, phthalic anhydride, benzoic anhydride, and benzoic anhydride. Among these carboxylic anhydrides, acetic anhydride and succinic anhydride are preferred in terms of dehydration effect.

使用[E]脫水劑時的混合量,相對於100質量份[A]成分,較佳為0.001~10質量份,進一步較佳為0.01~5質量份,特佳為0.03~1質量份。藉由使[E]脫水劑的用量為0.001~10質量份,可以提高正型感放射線性組成物的保存穩定性。The amount of the [E] dehydrating agent to be used is preferably 0.001 to 10 parts by mass, more preferably 0.01 to 5 parts by mass, even more preferably 0.03 to 1 part by mass, per 100 parts by mass of the component [A]. By using the amount of the [E] dehydrating agent in an amount of 0.001 to 10 parts by mass, the storage stability of the positive-type radiation-linear composition can be improved.

正型感放射線性組成物Positive-type radiation linear composition

本發明的正型感放射線性組成物通過混合上述[A]成分的矽氧烷聚合物、[B]成分的醌二疊氮化合物、[C]成分的由特定結構的單體形成的共聚物以及根據需要含有的任選成分([D]成分的感熱性酸產生劑或感熱性鹼產生劑等)製備。通常,正型感放射線性組成物較佳在適當的[F]溶劑中溶解或分散的狀態下製備、使用。例如,在溶劑中,通過將[A]、[B]和[C]成分以及任選成分以規定的比例混合,可以製備正型感放射線性組成物。The positive-type radiation-sensitive composition of the present invention is obtained by mixing the above-mentioned [A] component of a decane polymer, the [B] component of a quinonediazide compound, and the [C] component of a monomer of a specific structure. And an optional component (heat-sensitive acid generator or heat-sensitive alkali generator of the [D] component, etc.) which is contained as needed. Usually, the positive-type radiation-sensitive composition is preferably prepared and used in a state of being dissolved or dispersed in a suitable [F] solvent. For example, a positive-type radiation-sensitive composition can be prepared by mixing the components [A], [B], and [C] and optional components in a predetermined ratio in a solvent.

作為可以在該正型感放射線性組成物的製備中使用的[F]溶劑,適合使用將各成分均勻地溶解或者分散,並且不和各成分反應的溶劑。作為這種溶劑,可以列舉出例如醇類、醚類、二乙二醇烷基醚類、乙二醇烷基醚乙酸酯類、丙二醇單烷基醚類、丙二醇單烷基醚乙酸酯類、丙二醇單烷基醚丙酸酯類、芳香族烴類、酮類、酯類等。As the [F] solvent which can be used for the preparation of the positive-type radiation-sensitive composition, a solvent which uniformly dissolves or disperses each component and does not react with each component is suitably used. Examples of such a solvent include alcohols, ethers, diethylene glycol alkyl ethers, ethylene glycol alkyl ether acetates, propylene glycol monoalkyl ethers, and propylene glycol monoalkyl ether acetates. Propylene glycol monoalkyl ether propionates, aromatic hydrocarbons, ketones, esters, and the like.

作為這些溶劑分別可以列舉出:作為醇類是例如苯甲醇、二丙酮醇等;作為醚類是例如四氫呋喃以及二異丙基醚、二正丁基醚、二正戊基醚、二異戊基醚、二正己基醚等二烷基醚等;作為二乙二醇烷基醚類是例如二乙二醇單甲基醚、二乙二醇單乙基醚、二乙二醇二甲基醚、二乙二醇二乙基醚、二乙二醇乙基甲基醚等;作為乙二醇烷基醚乙酸酯類是例如甲基溶纖素乙酸酯、乙基溶纖素乙酸酯、乙二醇單丁基醚乙酸酯、乙二醇單乙基醚乙酸酯等;作為丙二醇單烷基醚類是例如丙二醇單甲基醚、丙二醇單乙基醚、丙二醇單丙基醚、丙二醇單丁基醚等;作為丙二醇單烷基醚乙酸酯類是例如丙二醇單甲基醚乙酸酯、丙二醇單乙基醚乙酸酯、丙二醇單丙基醚乙酸酯、丙二醇單丁基醚乙酸酯等;作為丙二醇單烷基醚丙酸酯類是例如丙二醇單甲基醚丙酸酯、丙二醇單乙基醚丙酸酯、丙二醇單丙基醚丙酸酯、丙二醇單丁基醚丙酸酯等;作為芳香族烴類是例如甲苯、二甲苯等;作為酮類是例如甲基乙基酮、甲基異丁基酮、環己酮、2-庚酮、4-羥基-4-甲基-2-戊酮等;作為酯類是例如乙酸甲酯、乙酸乙酯、乙酸丙酯、乙酸異丙酯、乙酸丁酯、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸甲酯、2-羥基-2-甲基丙酸乙酯、羥基乙酸甲酯、羥基乙酸乙酯、羥基乙酸丁酯、乳酸甲酯、乳酸乙酯、乳酸丙酯、乳酸丁酯、3-羥基丙酸甲酯、3-羥基丙酸乙酯、3-羥基丙酸丙酯、3-羥基丙酸丁酯、2-羥基-3-甲基丁酸甲酯、甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯、乙氧基乙酸丙酯、乙氧基乙酸丁酯、丙氧基乙酸甲酯、丙氧基乙酸乙酯、丙氧基乙酸丙酯、丙氧基乙酸丁酯、丁氧基乙酸甲酯、丁氧基乙酸乙酯、丁氧基乙酸丙酯、丁氧基乙酸丁酯、2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-甲氧基丙酸丁酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯等。Examples of the solvent include, for example, benzyl alcohol and diacetone alcohol as the alcohols, and tetrahydrofuran and diisopropyl ether, di-n-butyl ether, di-n-pentyl ether, and diisoamyl groups as the ethers. a dialkyl ether such as ether or di-n-hexyl ether; and as the diethylene glycol alkyl ether, for example, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether , diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, etc.; as ethylene glycol alkyl ether acetates such as methyl fibrin acetate, ethyl fibrin acetate , ethylene glycol monobutyl ether acetate, ethylene glycol monoethyl ether acetate, etc.; as propylene glycol monoalkyl ethers are, for example, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether , propylene glycol monobutyl ether, etc.; as propylene glycol monoalkyl ether acetates are, for example, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl Ethyl acetate, etc.; as propylene glycol monoalkyl ether propionate, for example, propylene glycol monomethyl ether propionate, propylene glycol Ethyl ether propionate, propylene glycol monopropyl ether propionate, propylene glycol monobutyl ether propionate, etc.; as aromatic hydrocarbons, for example, toluene, xylene, etc.; as ketones, for example, methyl ethyl ketone, Methyl isobutyl ketone, cyclohexanone, 2-heptanone, 4-hydroxy-4-methyl-2-pentanone, etc.; as esters such as methyl acetate, ethyl acetate, propyl acetate, acetic acid Propyl ester, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, methyl hydroxyacetate, ethyl hydroxyacetate , butyl glycolate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, propyl 3-hydroxypropionate, 3-hydroxypropyl Butyl acrylate, methyl 2-hydroxy-3-methylbutanoate, methyl methoxyacetate, ethyl methoxyacetate, propyl methoxyacetate, butyl methoxyacetate, ethoxyacetate Ester, ethyl ethoxyacetate, propyl ethoxyacetate, butyl ethoxyacetate, methyl propoxyacetate, ethyl propoxyacetate, propyl propoxyacetate, butyl propoxyacetate Butyoxyacetate Ester, ethyl butoxylate, propyl butoxyacetate, butyl butoxyacetate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, 2-methoxypropionic acid Propyl ester, butyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, and the like.

這些溶劑中,從溶解性或分散性優異、和各成分的非反應性、以及形成塗膜的容易性的觀點來看,較佳為二烷基醚等醚類,二乙二醇烷基醚類、乙二醇烷基醚乙酸酯類、丙二醇單烷基醚類、丙二醇單烷基醚乙酸酯類、酮類和酯類,特佳為二乙二醇二乙基醚、二乙二醇乙基甲基醚、甲基溶纖素乙酸酯、乙基溶纖素乙酸酯、丙二醇單甲基醚、丙二醇單乙基醚、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚乙酸酯、環己酮、乙酸丙酯、乙酸異丙酯、乙酸丁酯、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸甲酯、2-羥基-2-甲基丙酸乙酯、乳酸甲酯、乳酸乙酯、乳酸丙酯、乳酸丁酯、2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯。這些溶劑可以單獨或混合使用。Among these solvents, ethers such as dialkyl ethers and diethylene glycol alkyl ethers are preferred from the viewpoints of excellent solubility and dispersibility, non-reactivity of each component, and ease of formation of a coating film. Classes, ethylene glycol alkyl ether acetates, propylene glycol monoalkyl ethers, propylene glycol monoalkyl ether acetates, ketones and esters, particularly preferably diethylene glycol diethyl ether, diethylene glycol Ethyl methyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether Acetate, cyclohexanone, propyl acetate, isopropyl acetate, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate, 2-hydroxy-2-methyl Ethyl propionate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate. These solvents may be used singly or in combination.

另外,這些溶劑中,較佳為二異丙基醚、二正丁基醚、二正戊基醚、二異戊基醚、二正己基醚等二烷基醚等醚類,最佳二異戊基醚。通過使用這種溶劑,在通過狹縫塗布法在大型玻璃基板上塗布感放射線性組成物時,可以縮短乾燥步驟時間,同時可以更進一步提高塗布性(抑制塗布不勻)。Further, among these solvents, ethers such as dialkyl ethers such as diisopropyl ether, di-n-butyl ether, di-n-pentyl ether, diisoamyl ether and di-n-hexyl ether are preferred. Amyl ether. By using such a solvent, when the radiation sensitive composition is coated on a large glass substrate by a slit coating method, the drying step time can be shortened, and the coating property can be further improved (uneven coating unevenness).

除了上述溶劑以外,根據需要,還可以和苄基乙基醚、二己基醚、二乙二醇單甲基醚、二乙二醇單乙基醚、二乙二醇單丁基醚、丙酮基丙酮、異佛爾酮、己酸、癸酸、1-辛醇、1-壬醇、苄醇、乙酸苄酯、苯甲酸乙酯、草酸二乙酯、馬來酸二乙酯、γ-丁內酯、碳酸乙二酯、碳酸丙二酯、苯基溶纖素乙酸酯、卡必醇乙酸酯等高沸點溶劑一起使用。In addition to the above solvents, if necessary, it may be combined with benzyl ethyl ether, dihexyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, acetonyl Acetone, isophorone, caproic acid, capric acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyl A high boiling point solvent such as lactone, ethylene carbonate, propylene carbonate, phenyl cellosolve acetate or carbitol acetate is used together.

將正型感放射線性組成物以溶液或者分散液狀態製備時,佔據溶液中的[F]溶劑以外的成分(也就是[A]、[B]和[C]成分以及其他任選成分的總量)的比例,可以根據使用目的以及所希望的膜厚等任意設定,較佳為5~50質量%、更佳為10~40質量%、最佳為15~35質量%。When the positive-type radiation-sensitive composition is prepared in a solution or dispersion state, it occupies a component other than the [F] solvent in the solution (that is, the total of [A], [B], and [C] components, and other optional components. The ratio of the amount can be arbitrarily set depending on the purpose of use and the desired film thickness, and is preferably 5 to 50% by mass, more preferably 10 to 40% by mass, most preferably 15 to 35% by mass.

層間絕緣膜的形成Formation of interlayer insulating film

接著,對使用上述的正型感放射線性組成物,在基板上形成層間絕緣膜的方法進行說明。該方法包含以下順序記載的以下步驟。Next, a method of forming an interlayer insulating film on a substrate using the positive-type radiation-sensitive composition described above will be described. This method includes the following steps described in the following order.

(1)在基板上形成該正型感放射線性組成物的塗膜的步驟,(1) a step of forming a coating film of the positive-type radiation-sensitive composition on a substrate,

(2)對步驟(1)形成的塗膜的至少一部分照射放射線的步驟,(2) a step of irradiating at least a part of the coating film formed in the step (1) with radiation,

(3)將步驟(2)中照射了放射線的塗膜顯影的步驟,以及(3) a step of developing the coating film irradiated with radiation in the step (2), and

(4)加熱在步驟(3)中顯影的塗膜的步驟。(4) a step of heating the coating film developed in the step (3).

(1)在基板上形成該正型感放射線性組成物的塗膜的步驟(1) Step of forming a coating film of the positive-type radiation-sensitive composition on a substrate

在上述(1)的步驟中,將該正型感放射線性組成物的溶液或分散液塗布到基板上後,較佳通過加熱(預烘焙)塗布面除去溶劑,形成塗膜。作為可以使用的基板的例子,可以列舉出玻璃、石英、矽、樹脂等。作為樹脂的具體例子,可以列舉出聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚醚碸、聚碳酸酯、聚醯亞胺、環狀烯烴的開環聚合物及其氫化物等。In the step (1), after applying the solution or dispersion of the positive-acting radiation-sensitive composition onto the substrate, it is preferred to remove the solvent by heating (pre-baking) the coated surface to form a coating film. Examples of the substrate that can be used include glass, quartz, rhodium, and resin. Specific examples of the resin include open-loop polymers of polyethylene terephthalate, polybutylene terephthalate, polyether oxime, polycarbonate, polyimine, and cyclic olefin. Hydride, etc.

作為組成物溶液或分散液的塗布方法沒有特別的限定,可以採用例如噴霧法、輥塗法、旋轉塗布法(旋塗法)、縫模塗布法、刮條塗布法等適當的方法。這些塗布方法中,特佳為旋塗法或縫模塗布法。預烘焙的條件根據各成分的種類、混合比例等而異,較佳在70~120℃下進行1~10分鐘左右。The coating method of the composition solution or the dispersion liquid is not particularly limited, and an appropriate method such as a spray method, a roll coating method, a spin coating method (spin coating method), a slit die coating method, or a bar coating method can be employed. Among these coating methods, a spin coating method or a slit die coating method is particularly preferred. The pre-baking conditions vary depending on the type of each component, the mixing ratio, etc., and are preferably carried out at 70 to 120 ° C for about 1 to 10 minutes.

(2)對塗膜的至少一部分照射放射線的步驟(2) a step of irradiating at least a part of the coating film with radiation

在上述(2)的步驟中,將形成的塗膜的至少一部分曝光。在這種情況下,對塗膜的一部分曝光時,通常通過具有規定圖案的光光罩曝光。作為曝光使用的放射線,可以使用例如可見光線、紫外線、遠紫外線、電子束、X射線等。這些放射線中,較佳為波長在190~450nm的範圍的放射線,特佳為含有365nm的紫外線的放射線。In the step (2) above, at least a part of the formed coating film is exposed. In this case, when a part of the coating film is exposed, it is usually exposed by a mask having a predetermined pattern. As the radiation used for exposure, for example, visible light, ultraviolet light, far ultraviolet light, electron beam, X-ray or the like can be used. Among these radiations, radiation having a wavelength in the range of 190 to 450 nm is preferable, and radiation containing ultraviolet rays of 365 nm is particularly preferable.

該步驟中的曝光量是通過照度計(OAI model 356,OAI Optical Associates Inc.製造)測定放射線的波長365nm下的強度得到的值,較佳為500~6,000J/m2 ,更佳為1500~1,800J/m2The exposure amount in this step is a value obtained by measuring the intensity at a wavelength of 365 nm of the radiation by an illuminometer (OAI model 356, manufactured by OAI Optical Associates Inc.), preferably 500 to 6,000 J/m 2 , more preferably 1,500 Å. 1,800J/m 2 .

(3)顯影步驟(3) Development step

上述(3)的步驟中,通過將曝光後的塗膜顯影,除去不需要的部分(放射線的照射部分),形成規定的圖案。作為顯影步驟中使用的顯影液,較佳為鹼(鹼性化合物)的水溶液。作為鹼的例子,可以列舉出氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、偏矽酸鈉、氨等無機鹼,氫氧化四甲基銨、氫氧化四乙基銨等四級銨鹽等。In the step (3), the exposed coating film is developed to remove an unnecessary portion (irradiated portion of the radiation) to form a predetermined pattern. As the developing solution used in the developing step, an aqueous solution of an alkali (basic compound) is preferred. Examples of the base include inorganic bases such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium citrate, sodium metasilicate, and ammonia, and tetrabasic ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide. Salt and so on.

另外,在這種鹼水溶液中,還可以適量添加甲醇、乙醇等水溶性有機溶劑或表面活性劑使用。從得到適當的顯影性的觀點來看,鹼水溶液中的鹼的濃度較佳為0.1質量%以上、5質量%以下。作為顯影方法,可以利用盛液法、浸漬法、搖動浸漬法、淋浴法等適當的方法。顯影時間根據正型感放射線性組成物的組成而異,較佳為10~180秒左右。在這種顯影處理之後,例如進行30~90秒鐘流水洗滌後,例如通過壓縮空氣或壓縮氮氣風乾,可以形成所希望的圖案。Further, in such an aqueous alkali solution, a water-soluble organic solvent such as methanol or ethanol or a surfactant may be added in an appropriate amount. The concentration of the alkali in the aqueous alkali solution is preferably 0.1% by mass or more and 5% by mass or less from the viewpoint of obtaining appropriate developability. As the developing method, an appropriate method such as a liquid-filling method, a dipping method, a shaking dipping method, or a shower method can be used. The development time varies depending on the composition of the positive-type radiation-linear composition, and is preferably about 10 to 180 seconds. After such development treatment, for example, after 30 to 90 seconds of running water washing, for example, by air drying with compressed air or compressed nitrogen, a desired pattern can be formed.

(4)加熱步驟(4) Heating step

在上述(4)的步驟中,使用熱板、烘箱等加熱裝置,對形成圖案的薄膜加熱,促進上述[A]成分的自身硬化反應和[C]成分的硬化反應,可以得到硬化物。特別是可以認為在使用[D]成分的感熱性酸產生劑或感熱性鹼產生劑時,在加熱步驟中產生酸性活性物質或鹼性活性物質,其成為催化劑,進一步促進[A]成分的縮合反應。該步驟中的加熱溫度例如是120~250℃。加熱時間根據加熱設備的種類而異,例如在熱板上進行加熱步驟時,進行5~30分鐘;在烘箱中進行加熱步驟時,是30~90分鐘。還可以使用進行兩次以上的加熱步驟的階段性烘焙法等。這樣,可以在基板表面形成對應於所需要的層間絕緣膜的圖案狀薄膜。In the step (4), a patterned film is heated by a heating means such as a hot plate or an oven to promote the self-hardening reaction of the component [A] and the hardening reaction of the component [C], whereby a cured product can be obtained. In particular, when a heat-sensitive acid generator or a heat-sensitive base generator of the component [D] is used, an acidic active material or a basic active material is generated in a heating step, which serves as a catalyst to further promote condensation of the [A] component. reaction. The heating temperature in this step is, for example, 120 to 250 °C. The heating time varies depending on the type of the heating device, for example, 5 to 30 minutes when the heating step is performed on the hot plate, and 30 to 90 minutes when the heating step is performed in the oven. A stepwise baking method or the like which performs two or more heating steps can also be used. Thus, a pattern-like film corresponding to the required interlayer insulating film can be formed on the surface of the substrate.

層間絕緣膜Interlayer insulating film

這樣形成的層間絕緣膜的膜厚較佳為0.1~8μm,更佳為0.1~6μm,最佳為0.1~4μm。The film thickness of the interlayer insulating film thus formed is preferably from 0.1 to 8 μm, more preferably from 0.1 to 6 μm, most preferably from 0.1 to 4 μm.

由本發明的正型感放射線性組成物形成的層間絕緣膜如下述實施例表明的那樣,能均衡性良好地滿足耐熱性、透明性、耐溶劑性以及低介電性這樣一般要求的性質,同時具有無塗布不勻的高度平整性。因此,該層間絕緣膜適合作為顯示元件的用途使用。The interlayer insulating film formed of the positive-type radiation-sensitive composition of the present invention can satisfy the generally required properties such as heat resistance, transparency, solvent resistance, and low dielectric properties as well as the following examples. It has a high degree of flatness without uneven coating. Therefore, the interlayer insulating film is suitable for use as a display element.

[實施例][Examples]

以下所述合成例、實施例,對本發明進行更具體地說明,但是本發明並不受到以下實施例的限定。The present invention will be more specifically described in the following Synthesis Examples and Examples, but the present invention is not limited by the following examples.

由以下的各合成例得到的[A]成分的水解性矽烷化合物的水解縮合物以及[C]成分的共聚物的數平均分子量(Mn)和重量平均分子量(Mw)通過下述方式的凝膠滲透色譜法(GPC)測定。The number average molecular weight (Mn) and the weight average molecular weight (Mw) of the hydrolyzed condensate of the hydrolyzable decane compound of the component [A] obtained in each of the following synthesis examples and the copolymer of the component [C] are obtained by the following method. Determination by permeation chromatography (GPC).

裝置:GPC-101(昭和電工股份有限公司製造)Device: GPC-101 (made by Showa Denko Co., Ltd.)

柱:組合GPC-KF-801、GPC-KF-802、GPC-KF-803和GPC-KF-804(昭和電工股份有限公司製造)形成Column: a combination of GPC-KF-801, GPC-KF-802, GPC-KF-803, and GPC-KF-804 (manufactured by Showa Denko Co., Ltd.)

移動相:四氫呋喃Mobile phase: tetrahydrofuran

[A]成分的水解性矽烷化合物的水解縮合物的合成例Synthesis example of hydrolysis condensate of hydrolyzable decane compound of [A] component [合成例1][Synthesis Example 1]

在帶攪拌器的容器內,加入25質量份丙二醇單甲基醚後,加入30質量份甲基三甲氧基矽烷、23質量份苯基三甲氧基矽烷和0.1質量份四異丙氧基鋁,加熱到溶液溫度為60℃。溶液溫度達到60℃後,加入18質量份離子交換水,加熱到75℃,保持3小時。接著,加入28質量份原甲酸甲酯作為脫水劑,攪拌1小時。然後,使溶液溫度為40℃,邊保持溫度,邊蒸發,將離子交換水和水解縮合產生的甲醇除去。如上,得到水解縮合物(A-1)。水解縮合物(A-1)的固體成分濃度為40.5質量%,所得的水解縮合物的數平均分子量(Mn)為1,500,分子量分布(Mw/Mn)為2。After adding 25 parts by mass of propylene glycol monomethyl ether in a vessel equipped with a stirrer, 30 parts by mass of methyltrimethoxydecane, 23 parts by mass of phenyltrimethoxydecane, and 0.1 part by mass of aluminum tetraisopropoxide were added. Heat to a solution temperature of 60 °C. After the solution temperature reached 60 ° C, 18 parts by mass of ion-exchanged water was added and heated to 75 ° C for 3 hours. Next, 28 parts by mass of methyl orthoformate was added as a dehydrating agent, and the mixture was stirred for 1 hour. Then, the temperature of the solution was adjusted to 40 ° C, and while maintaining the temperature, the mixture was evaporated to remove the ion-exchanged water and the methanol produced by the hydrolysis condensation. As described above, the hydrolysis condensate (A-1) was obtained. The solid content concentration of the hydrolysis-condensation product (A-1) was 40.5 mass%, and the obtained hydrolysis-condensation product had a number average molecular weight (Mn) of 1,500 and a molecular weight distribution (Mw/Mn) of 2.

[合成例2][Synthesis Example 2]

在帶攪拌器的容器內,加入25質量份丙二醇單甲基醚,接著,加入22質量份甲基三甲氧基矽烷、12質量份γ-縮水甘油氧基丙基三甲氧基矽烷、20質量份苯基三甲氧基矽烷和0.1質量份四異丙氧基鋁,通過和合成例1同樣的方法,得到水解縮合物(A-2)。水解縮合物(A-2)的固體成分濃度為39.8質量%,所得的水解縮合物的數平均分子量(Mn)為1,600,分子量分布(Mw/Mn)為2。In a container with a stirrer, 25 parts by mass of propylene glycol monomethyl ether was added, followed by 22 parts by mass of methyltrimethoxydecane, 12 parts by mass of γ-glycidoxypropyltrimethoxydecane, and 20 parts by mass. A hydrolysis condensate (A-2) was obtained in the same manner as in Synthesis Example 1 except for phenyltrimethoxydecane and 0.1 part by mass of aluminum tetraisopropoxide. The solid content concentration of the hydrolysis-condensation product (A-2) was 39.8 mass%, and the obtained hydrolysis-condensation product had a number average molecular weight (Mn) of 1,600 and a molecular weight distribution (Mw/Mn) of 2.

[C]成分的由具有特定結構的單體形成的共聚物a copolymer of a component [C] having a specific structure [合成例3][Synthesis Example 3]

在帶有攪拌裝置、冷凝器和溫度計的玻璃燒瓶中,加入28.4質量份作為(c1)化合物的上述式(c1-1)所示的化合物、20.7質量份作為(c2)化合物的新中村化學股份有限公司製造的“NK-ESTER M-90G”、18.1質量份作為(c3)化合物的下述式(c3-1-1-1)所示的化合物、作為(c4)化合物的5.9質量份甲基丙烯酸甲酯和23.5質量份丙烯酸2-乙基己基酯、3.4質量份作為(c5)的化合物1,4-丁二醇的兩末端甲基丙烯酸酯化的化合物以及作為溶劑的414質量份異丙醇,在氮氣流中,在回流下,添加0.7質量份作為聚合引發劑的2,2’-偶氮二異丁腈和4質量份作為鏈轉移劑的月桂基硫醇後,在75℃下回流8小時進行共聚,得到含有共聚物(C-1)的溶液。之後,使用蒸發器,在70℃以下的加熱條件下除去溶劑,分離出共聚物(C-1)。得到的共聚物(C-1)的數均分子量Mn為2,800,重量平均分子量Mw是5,300,而且分子量分布(Mw/Mn)是1.9。In a glass flask equipped with a stirring device, a condenser and a thermometer, 28.4 parts by mass of a compound represented by the above formula (c1-1) as a compound (c1) and 20.7 parts by mass of a new Nakamura Chemical Co., Ltd. as a compound (c2) were added. "NK-ESTER M-90G" manufactured by the company, 18.1 parts by mass of a compound represented by the following formula (c3-1-1-1) as a compound of (c3), and 5.9 parts by mass of a methyl group as a compound of (c4) Methyl acrylate and 23.5 parts by mass of 2-ethylhexyl acrylate, 3.4 parts by mass of a compound of (c5) 1,4-butanediol, a terminal methacrylated compound, and 414 parts by mass of isopropyl as a solvent Alcohol, after adding 0.7 parts by mass of 2,2'-azobisisobutyronitrile as a polymerization initiator and 4 parts by mass of lauryl mercaptan as a chain transfer agent under reflux in a nitrogen stream, at 75 ° C The copolymerization was carried out under reflux for 8 hours to obtain a solution containing the copolymer (C-1). Thereafter, the solvent was removed under heating at 70 ° C or lower using an evaporator to separate the copolymer (C-1). The obtained copolymer (C-1) had a number average molecular weight Mn of 2,800, a weight average molecular weight Mw of 5,300, and a molecular weight distribution (Mw/Mn) of 1.9.

式中,Me是甲基。In the formula, Me is a methyl group.

[合成例4][Synthesis Example 4]

除了使作為鏈轉移劑的月桂基硫醇的添加量為1質量份以外,和上述合成例3同樣地,得到共聚物(C-2)。得到的共聚物(C-2)的數平均分子量Mn為4,700,重量平均分子量Mw是11,000,而且分子量分布(Mw/Mn)是2.3。The copolymer (C-2) was obtained in the same manner as in the above Synthesis Example 3 except that the amount of the lauryl mercaptan added as the chain transfer agent was 1 part by mass. The obtained copolymer (C-2) had a number average molecular weight Mn of 4,700, a weight average molecular weight Mw of 11,000, and a molecular weight distribution (Mw/Mn) of 2.3.

[合成例5][Synthesis Example 5]

除了不使用作為鏈轉移劑的月桂基硫醇,使共聚的溫度和時間分別是73℃和10小時以外,和上述合成例3同樣地得到共聚物(C-3)。得到的共聚物(C-3)的數平均分子量Mn為5,600,重量平均分子量Mw是21,000,而且分子量分布(Mw/Mn)是3.8。The copolymer (C-3) was obtained in the same manner as in the above Synthesis Example 3 except that the lauryl mercaptan as a chain transfer agent was not used, and the temperature and time of copolymerization were 73 ° C and 10 hours, respectively. The obtained copolymer (C-3) had a number average molecular weight Mn of 5,600, a weight average molecular weight Mw of 21,000, and a molecular weight distribution (Mw/Mn) of 3.8.

[合成例6][Synthesis Example 6]

在帶有攪拌裝置、冷凝器和溫度計的玻璃燒瓶中,加入31.8質量份作為(c1)化合物的上述式(c1-3)所示的化合物、31.6質量份作為化合物(c2)的新中村化學股份有限公司製造的“NK-ESTER M-90G”、29.0質量份作為(c3)化合物的下述式(c3-1-1-1)所示的化合物和414質量份異丙醇,在氮氣流中,在回流下,添加0.7質量份作為聚合引發劑的2,2’-偶氮二異丁腈(AIBN)、4質量份作為鏈轉移劑的月桂基硫醇後,在75℃下回流8小時進行共聚,得到含有共聚物(C-4)的溶液。之後,使用蒸發器,在70℃以下的加熱條件下除去溶劑,分離出共聚物(C-4)。得到的共聚物(C-4)的數均分子量Mn為3,000,重量平均分子量Mw是6,000。而且分子量分布(Mw/Mn)是2.0。In a glass flask equipped with a stirring device, a condenser, and a thermometer, 31.8 parts by mass of a compound represented by the above formula (c1-3) as a compound (c1), and 31.6 parts by mass of a new Nakamura Chemical Co., Ltd. as a compound (c2) were added. "NK-ESTER M-90G" manufactured by the company, 29.0 parts by mass of a compound represented by the following formula (c3-1-1-1) as a compound of (c3) and 414 parts by mass of isopropyl alcohol in a nitrogen stream After adding 0.7 parts by mass of 2,2'-azobisisobutyronitrile (AIBN) as a polymerization initiator and 4 parts by mass of lauryl mercaptan as a chain transfer agent under reflux, it was refluxed at 75 ° C for 8 hours. Copolymerization was carried out to obtain a solution containing the copolymer (C-4). Thereafter, the solvent was removed under heating at 70 ° C or lower using an evaporator to separate the copolymer (C-4). The obtained copolymer (C-4) had a number average molecular weight Mn of 3,000 and a weight average molecular weight Mw of 6,000. Further, the molecular weight distribution (Mw/Mn) was 2.0.

[合成例7][Synthesis Example 7]

在帶有攪拌裝置、冷凝器和溫度計的玻璃燒瓶中,加入24.2質量份作為(c1)化合物的上述式(c1-5)所示的化合物、20.7質量份作為化合物(c2)的新中村化學股份有限公司製造的“NK-ESTER M-90G”、21.5質量份作為(c3)化合物的下述式(c3-1-1-1)所示的化合物、29.4質量份作為(c4)化合物的甲基丙烯酸正丁酯和414質量份異丙醇,在氮氣流中,在回流下,添加0.7質量份作為聚合引發劑的2,2’-偶氮二異丁腈(AIBN)、4質量份作為鏈轉移劑的月桂基硫醇後,在75℃下回流8小時進行共聚,得到含有共聚物(C-5)的溶液。之後,使用蒸發器,在70℃以下的加熱條件下除去溶劑,分離出共聚物(C-5)。得到的共聚物(C-5)的數平均分子量Mn為2,600,重量平均分子量Mw是5,000。而且分子量分布(Mw/Mn)是1.9。In a glass flask equipped with a stirring device, a condenser, and a thermometer, 24.2 parts by mass of a compound represented by the above formula (c1-5) as a compound (c1), and 20.7 parts by mass of a new Nakamura Chemical Co., Ltd. as a compound (c2) were added. "NK-ESTER M-90G" manufactured by the company, 21.5 parts by mass of a compound represented by the following formula (c3-1-1-1) as a compound of (c3), and 29.4 parts by mass of a methyl group as a compound of (c4) N-butyl acrylate and 414 parts by mass of isopropyl alcohol, and 0.7 parts by mass of 2,2'-azobisisobutyronitrile (AIBN) as a polymerization initiator and 4 parts by mass as a polymerization initiator were added under reflux in a nitrogen stream. After the transfer agent of lauryl mercaptan was refluxed at 75 ° C for 8 hours, copolymerization was carried out to obtain a solution containing the copolymer (C-5). Thereafter, the solvent was removed under heating at 70 ° C or lower using an evaporator to separate the copolymer (C-5). The obtained copolymer (C-5) had a number average molecular weight Mn of 2,600 and a weight average molecular weight Mw of 5,000. Further, the molecular weight distribution (Mw/Mn) was 1.9.

正型感放射線性組成物的製備Preparation of positive-type radiation linear composition [實施例1][Example 1]

在合成例1得到的含有水解縮合物(A-1)的溶液(相當於100質量份水解縮合物(A-1)(固體成分)的量)中,混合30質量份作為[B]成分的4,4’-[1-[4-[1-[4-羥基苯基]-1-甲基乙基]苯基]伸乙基]聯苯酚(1.0mol)和1,2-萘醌二疊氮-5-磺醯氯(2.0mol)的縮合物(B-1)、0.50質量份作為[C]成分的合成例3得到的共聚物(C-1),然後添加作為溶劑的二乙二醇乙基甲基醚以使固體成分濃度為25質量%後,通過口徑0.2μm的薄膜篩檢程式過濾,製備正型感放射線性組成物(S-1)。In the solution containing the hydrolysis-condensation product (A-1) obtained in Synthesis Example 1 (corresponding to 100 parts by mass of the hydrolysis-condensation product (A-1) (solid content)), 30 parts by mass of the component (B) was mixed. 4,4'-[1-[4-[1-[4-Hydroxyphenyl]-1-methylethyl]phenyl]extended ethyl]biphenol (1.0 mol) and 1,2-naphthoquinone a condensate (B-1) of azide-5-sulfonyl chloride (2.0 mol), 0.50 parts by mass of a copolymer (C-1) obtained in Synthesis Example 3 as a component [C], and then adding diethyl ether as a solvent After the solid content concentration was 25% by mass, the diol ethyl methyl ether was filtered through a membrane screening procedure having a diameter of 0.2 μm to prepare a positive-acting radiation linear composition (S-1).

[實施例2~7和比較例1~3][Examples 2 to 7 and Comparative Examples 1 to 3]

除了各成分種類和量如表1所記載以外,和實施例1同樣地製備正型感放射線性組成物。另外,比較例1和2使用以下的表面活性劑代替[C]成分的共聚物。A positive-type radiation-sensitive composition was prepared in the same manner as in Example 1 except that the types and amounts of the respective components were as described in Table 1. Further, Comparative Examples 1 and 2 used the following surfactant instead of the copolymer of the [C] component.

c-1(比較例1):有機矽類表面活性劑(Toray Dow Corning Silicone股份有限公司製造的“SH-193”)C-1 (Comparative Example 1): an organic terpene surfactant ("SH-193" manufactured by Toray Dow Corning Silicone Co., Ltd.)

c-2(比較例2):含氟表面活性劑(NEOS股份有限公司製造的“FTERGENT 222F”)C-2 (Comparative Example 2): fluorosurfactant ("FTERGENT 222F" manufactured by NEOS Co., Ltd.)

物性評價Physical property evaluation

使用如上製備的各種正型感放射線性組成物,如下評價該組成物及其作為塗膜或層間絕緣膜的各種性質。Using the various positive-type radiation-sensitive compositions prepared as above, the composition and various properties as a coating film or an interlayer insulating film were evaluated as follows.

[塗膜的外觀評價][Appearance evaluation of coating film]

使用縫模塗布器(東京應化工業股份有限公司製造的型號“TR632105-CL”),在550×650mm的形成鉻膜的玻璃上塗布如上製備的感放射線性組成物,將達到的壓力設定為100Pa,在真空下除去溶劑後,進而在90℃進行2分鐘預烘焙,形成膜厚3.0μm的塗膜。在鈉燈下,經由肉眼觀察該塗膜的外觀。此時,將薄膜整體產生的霧狀的不勻作為“霧狀不勻”,將來自預烘焙爐的接近銷(proxy pin)的不勻作為“銷不勻”,研究其出現情況。幾乎都沒有發現這些不勻的情形評價為“良好”,少量發現這些不勻的任意一種的情形評價為“稍微不好”,清楚的看到的情形評價為“不好”。評價結果在表1中表示。The radiation-sensitive composition prepared above was applied onto a 550 × 650 mm chromium-forming glass using a slit die coater (model "TR632105-CL" manufactured by Tokyo Ohka Kogyo Co., Ltd.), and the pressure reached was set to After removing the solvent under vacuum at 100 Pa, it was further prebaked at 90 ° C for 2 minutes to form a coating film having a film thickness of 3.0 μm. The appearance of the coating film was visually observed under a sodium lamp. At this time, the unevenness of the mist generated in the entire film was referred to as "fog unevenness", and the unevenness of the proximity pin from the prebaking furnace was regarded as "unevenness of the pin", and the occurrence thereof was examined. Almost no such unevenness was found to be evaluated as "good", and a case where any of these unevenness was found in a small amount was evaluated as "slightly bad", and a case clearly seen was evaluated as "not good". The evaluation results are shown in Table 1.

[感放射線性組成物的放射線靈敏度評價][Evaluation of Radiation Sensitivity of Radiation-Linear Compositions]

在550×650mm的形成鉻膜的玻璃上塗布六甲基二矽氮烷(HMDS),在60℃加熱1分鐘(HMDS處理)。使用縫模式塗布器“TR632105-CL”,在該HMDS處理後的形成鉻膜的玻璃上塗布如上製備的感放射線性組成物,將達到的壓力設定為100Pa,在真空下除去溶劑後,進而在90℃進行2分鐘預烘焙,形成膜厚3.0μm的塗膜。接著,使用Cannon股份有限公司製造的MPA-600FA曝光機,通過具有60μm的線與空間比(10:1)的圖案的光罩,以對塗膜的曝光量為變數,照射放射線後,在表1記載的濃度的氫氧化四甲基銨水溶液中,在25℃下通過盛液法顯影。這裏,顯影時間是使用氫氧化四甲基銨的濃度為0.40質量%的顯影液時為80秒,使用2.38質量%的顯影液時為50秒。接著,通過超純水進行1分鐘流水洗滌,之後通過乾燥,在HMDS處理後的形成鉻膜的基板上形成圖案。此時,研究將6μm的線與空間比(1:1)的空間圖案完全溶解所必需的曝光量。將該值作為放射線靈敏度在表1中表示。該值為700J/m2 以下時,認為靈敏度良好。Hexamethyldiaziridine (HMDS) was applied to a 550 x 650 mm chrome-forming glass and heated at 60 ° C for 1 minute (HMDS treatment). The radiation-sensitive composition prepared above was applied onto the chrome-forming glass after the HMDS treatment using a slit pattern applicator "TR632105-CL", and the pressure reached was set to 100 Pa, and the solvent was removed under vacuum, and then Prebaking was carried out at 90 ° C for 2 minutes to form a coating film having a film thickness of 3.0 μm. Next, using a MPA-600FA exposure machine manufactured by Cannon Co., Ltd., a mask having a pattern of a line-to-space ratio (10:1) of 60 μm was used, and the amount of exposure to the coating film was changed, and the radiation was irradiated. The aqueous solution of tetramethylammonium hydroxide in the concentration described in 1 was developed by a liquid-holding method at 25 °C. Here, the development time was 80 seconds when a developer having a concentration of tetramethylammonium hydroxide of 0.40% by mass was used, and when a developer of 2.38 mass% was used, it was 50 seconds. Next, it was subjected to running water washing for 1 minute by ultrapure water, and then dried to form a pattern on the substrate on which the chrome film was formed after the HMDS treatment. At this time, the amount of exposure necessary to completely dissolve the spatial pattern of the line-to-space ratio (1:1) of 6 μm was investigated. This value is shown in Table 1 as the radiation sensitivity. When the value is 700 J/m 2 or less, the sensitivity is considered to be good.

[感放射線性組成物的顯影裕度的評價][Evaluation of development margin of radiation-sensitive linear composition]

和上述[感放射線性組成物的放射線靈敏度的評價]的情形同樣地,進行形成鉻膜的玻璃(4英寸的玻璃晶片)的HMDS處理。使用旋塗器,在該HMDS處理後的形成鉻膜的玻璃上塗布如上製備的感放射線性組成物,將達到的壓力設定為100Pa,通過真空乾燥除去溶劑後,進而在90℃進行2分鐘預烘焙,形成膜厚3.0μm的塗膜。接著,使用Cannon股份有限公司製造的MPA-600FA曝光機,通過具有6μm的線與空間比(1:1)的圖案的光罩,以相當於上述[感放射線性組成物的放射線靈敏度的評價]中研究的放射線靈敏度的值的曝光量對上述塗膜進行曝光,接著,使用表1記載的濃度的氫氧化四甲基銨水溶液,以顯影時間為變數,在25℃下通過盛液法顯影。接著,通過超純水進行1分鐘流水洗滌,之後通過乾燥,在HMDS處理後的形成鉻膜的基板上形成圖案。此時,將基線寬為6μm所必需的顯影時間為最佳顯影時間,在表1中表示。另外,測定從該最佳顯影時間進一步繼續顯影時,到6μm的線圖案剝落的時間,將該時間作為顯影裕度,在表1中表示。該值為30秒以上時,認為顯影裕度良好。The HMDS treatment of the glass (4 inch glass wafer) forming the chromium film was performed in the same manner as in the case of the above [Evaluation of the radiation sensitivity of the radiation sensitive composition]. The radiation-sensitive composition prepared above was applied onto the chrome-forming glass after the HMDS treatment using a spin coater, and the pressure reached was set to 100 Pa, and the solvent was removed by vacuum drying, and further preliminarily performed at 90 ° C for 2 minutes. Baking was carried out to form a coating film having a film thickness of 3.0 μm. Next, using a MPA-600FA exposure machine manufactured by Cannon Co., Ltd., a reticle having a pattern of a line-to-space ratio (1:1) of 6 μm was used to evaluate the radiation sensitivity corresponding to the above [radial-sensitive composition] The exposure amount of the radiation sensitivity value studied was exposed to the above-mentioned coating film, and then developed using a tetramethylammonium hydroxide aqueous solution having a concentration shown in Table 1 at a developing time as a variable at 25 ° C by a liquid-holding method. Next, it was subjected to running water washing for 1 minute by ultrapure water, and then dried to form a pattern on the substrate on which the chrome film was formed after the HMDS treatment. At this time, the development time necessary for the baseline width of 6 μm was the optimum development time, which is shown in Table 1. Further, the time from the peeling of the line pattern of 6 μm from the time when the development was further continued from the optimum development time was measured, and this time was taken as the development margin, which is shown in Table 1. When the value is 30 seconds or longer, the development margin is considered to be good.

[層間絕緣膜的耐溶劑性的評價][Evaluation of Solvent Resistance of Interlayer Insulating Film]

使用旋塗器,在形成鉻膜的玻璃(4英寸的玻璃晶片)上塗布如上製備的感放射線性組成物,將達到的壓力設定為100Pa,在真空下除去溶劑後,進而在90℃進行2分鐘預烘焙,形成塗膜。針對該塗膜使用Cannon股份有限公司製造的MPA-600FA曝光器,以累積照射量為9,000J/m2 曝光,接著,在清潔烘箱內,在220℃下加熱1小時,在形成鉻膜的玻璃上形成硬化膜。測定這裏得到的硬化膜的膜厚(T1)。然後,將形成該硬化膜的形成鉻膜的玻璃基板在溫度控制為70℃的二甲基亞碸中浸漬20分鐘後,再次測定硬化膜的膜厚(t1),算出浸漬引起的膜厚變化率{|t1-T1|/T1}×100[%]。該結果在表1中表示。該值為5%以下時,認為耐溶劑性良好。The radiation-sensitive composition prepared above was applied onto a glass (4 inch glass wafer) on which a chromium film was formed using a spin coater, and the pressure reached was set to 100 Pa, and the solvent was removed under vacuum, and further at 90 ° C. Pre-bake in minutes to form a coating film. For the coating film, an MPA-600FA exposing device manufactured by Cannon Co., Ltd. was used, and the cumulative irradiation amount was 9,000 J/m 2 , and then, in a cleaning oven, heating at 220 ° C for 1 hour, in the glass forming the chromium film. A cured film is formed thereon. The film thickness (T1) of the cured film obtained here was measured. Then, the glass substrate on which the chromium film was formed, which was formed into the cured film, was immersed in dimethyl sulfoxide having a temperature of 70 ° C for 20 minutes, and then the film thickness (t1) of the cured film was measured again to calculate the film thickness change caused by the immersion. Rate {|t1-T1|/T1}×100[%]. The results are shown in Table 1. When the value is 5% or less, the solvent resistance is considered to be good.

[層間絕緣膜的耐熱性的評價][Evaluation of heat resistance of interlayer insulating film]

和上述[層間絕緣膜的耐溶劑性的評價]的情形同樣地,在形成鉻膜的玻璃上形成硬化膜。測定這裏得到的硬化膜的膜厚(T2)。然後,將形成該硬化膜的形成鉻膜的玻璃基板在清潔烘箱內、240℃下追加加熱1小時後,再次測定硬化膜的膜厚(t2),算出追加加熱引起的膜厚變化率{{|t2-T2|/T2}×100[%]。該結果在表1中表示。該值為5%以下時,認為耐熱性良好。In the same manner as in the case of the above [Evaluation of Solvent Resistance of Interlayer Insulating Film], a cured film is formed on the glass on which the chromium film is formed. The film thickness (T2) of the cured film obtained here was measured. Then, the glass substrate on which the chromium film was formed to form the cured film was additionally heated in a cleaning oven at 240 ° C for 1 hour, and then the film thickness (t2) of the cured film was measured again, and the film thickness change rate by additional heating was calculated {{{ |t2-T2|/T2}×100[%]. The results are shown in Table 1. When the value is 5% or less, heat resistance is considered to be good.

[層間絕緣膜的透明性的評價][Evaluation of transparency of interlayer insulating film]

除了使用550×650mm的玻璃基板(NH Techno Glass股份有限公司製造的“NA35”)代替形成鉻膜的玻璃基板以外,和上述[層間絕緣膜的耐溶劑性的評價]的情形同樣地,在玻璃基板上形成硬化膜。使用分光光度計“150-20型雙光束(double beam)(日立製作所股份有限公司製造)”,以沒有硬化膜的玻璃基板作為參照側,在400~800nm的範圍的波長下,測定具有形成的硬化膜的玻璃基板的光線透過率。此時的最低光線透過率的值在表1中表示。該值為90%以上時,認為透明性良好。In addition to the use of a glass substrate of 550 × 650 mm ("NA35" manufactured by NH Techno Glass Co., Ltd.) instead of the glass substrate on which the chromium film is formed, in the same manner as in the case of [evaluation of solvent resistance of the interlayer insulating film], in the case of glass A cured film is formed on the substrate. Using a spectrophotometer "150-20 type double beam (manufactured by Hitachi, Ltd.)", a glass substrate having no cured film was used as a reference side, and the measurement was performed at a wavelength in the range of 400 to 800 nm. The light transmittance of the glass substrate of the cured film. The value of the lowest light transmittance at this time is shown in Table 1. When the value is 90% or more, transparency is considered to be good.

[層間絕緣膜的膜厚均勻性(平整性)的評價][Evaluation of film thickness uniformity (flatness) of interlayer insulating film]

和上述[層間絕緣膜的透明性的評價]同樣地,在玻璃基板上形成硬化膜。對該硬化膜測定20點的測定點的膜厚,通過下述式算出膜厚均勻性。In the same manner as the above [Evaluation of Transparency of Interlayer Insulating Film], a cured film was formed on a glass substrate. The film thickness of the measurement point at 20 points was measured for the cured film, and the film thickness uniformity was calculated by the following formula.

膜厚的均勻性(%)=(硬化膜的膜厚的最大值-最小值)×100/((20點的塗布膜厚的平均值)×2)Uniformity (%) of film thickness = (maximum-minimum film thickness of cured film) × 100 / ((average value of coating film thickness of 20 points) × 2)

如此算出的硬化膜的膜厚均勻性為1%以下的話,認為膜厚均勻性良好。另外,上述20點的測定點如下確定。也就是,從基板(550×650mm)的長邊和短邊的各末端起除去5cm的範圍的內側的區域(450×550mm)作為測定區域,在該區域的長邊方向和短邊方向的直線上分別每隔4cm地各確定10點(共計20點),將它們作為測定點。When the film thickness uniformity of the cured film thus calculated is 1% or less, it is considered that the film thickness uniformity is good. In addition, the measurement points of the above 20 points were determined as follows. In other words, a region (450 × 550 mm) inside the range of 5 cm is removed from each of the long side and the short side of the substrate (550 × 650 mm) as a measurement region, and a straight line in the longitudinal direction and the short side direction of the region. Each of the above is determined by 10 points (20 points in total) every 4 cm, and these are used as measurement points.

[層間絕緣膜的相對介電常數的評價][Evaluation of Relative Dielectric Constant of Interlayer Insulating Film]

藉由旋塗法,在經由劍麻軟皮(麻軟皮)研磨的表面平滑的SUS304製基板上,塗布如上製備的感放射線性組成物,將達到的壓力設定為100Pa,在真空下除去溶劑後,進而在90℃進行2分鐘預烘焙,形成膜厚3.0μm的塗膜。針對得到的該塗膜,使用Cannon股份有限公司製造的MPA-600FA曝光器,以累積照射量為9,000J/m2 曝光,接著,在清潔烘箱內,在220℃下加熱該基板1小時,在基板上形成硬化膜。藉由蒸鍍法在該硬化膜上形成Pt/Pd電極圖案,製造介電常數測定用樣品。對具有該電極圖案的基板,使用Yokogawa-Hewlett Packard股份有限公司製造的HP16451B電極和HP4284A精密LCR儀錶,在頻率10kHz的頻率下,通過CV法測定相對介電常數。測定結果在表1中表示。該值為3.9以下時,認為相對介電常數(低介電性)良好。The radiation-sensitive composition prepared as described above was applied onto a SUS304 substrate having a smooth surface polished by sisal soft skin (soft skin) by a spin coating method, and the pressure reached was set to 100 Pa, and the solvent was removed under vacuum. Thereafter, the film was prebaked at 90 ° C for 2 minutes to form a coating film having a film thickness of 3.0 μm. The obtained coating film was exposed to a cumulative irradiation amount of 9,000 J/m 2 using an MPA-600FA exposing device manufactured by Cannon Co., Ltd., and then the substrate was heated at 220 ° C for 1 hour in a cleaning oven. A cured film is formed on the substrate. A Pt/Pd electrode pattern was formed on the cured film by a vapor deposition method to produce a sample for dielectric constant measurement. The relative dielectric constant of the substrate having the electrode pattern was measured by a CV method using a HP16451B electrode manufactured by Yokogawa-Hewlett Packard Co., Ltd. and an HP4284A precision LCR meter at a frequency of 10 kHz. The measurement results are shown in Table 1. When the value is 3.9 or less, the relative dielectric constant (low dielectric property) is considered to be good.

如表1的結果表明,可以知道含有[A]、[B]和[C]成分的實施例1~7的正型感放射線性組成物與不含[C]成分的比較例1~3的正型感放射線性組成物相比,在塗膜的外觀中的塗布不勻和層間絕緣膜的平整性方面,更加優異。此外,還知道這些實施例的正型感放射線性組成物在具有高的放射線靈敏度和顯影裕度的同時,還可以形成充分滿足耐熱性、透明性、耐溶劑性和低介電性這樣一般要求的性質的層間絕緣膜。As shown in the results of Table 1, it is possible to know the positive-type radiation-sensitive linear compositions of Examples 1 to 7 containing [A], [B], and [C] components and Comparative Examples 1 to 3 containing no [C] component. The positive-type radiation-sensitive composition is more excellent in coating unevenness in the appearance of the coating film and in the flatness of the interlayer insulating film. Further, it is also known that the positive-type radiation-sensitive composition of these embodiments has a high radiation sensitivity and development margin, and can also form a general requirement that sufficiently satisfies heat resistance, transparency, solvent resistance, and low dielectric property. The interlayer insulating film of the nature.

[工業實用性][Industrial Applicability]

本發明的正型感放射線性組成物如上所述,具有高的放射線靈敏度和顯影裕度,可以形成除了具有足夠的耐熱性、透明性、耐溶劑性和低介電性以外,還具有優異的平整性的硬化膜。因此,該正型感放射線性組成物適合用於形成顯示元件用的層間絕緣膜。The positive-type radiation-sensitive composition of the present invention has high radiation sensitivity and development margin as described above, and can be formed to have excellent heat resistance, transparency, solvent resistance, and low dielectric property. A flat hardened film. Therefore, the positive-type radiation-radiating composition is suitable for forming an interlayer insulating film for a display element.

Claims (7)

一種正型感放射線性組成物,其包含:[A]矽氧烷聚合物,[B]醌二疊氮化合物,以及[C]包含(c1)下述式(5)所示的化合物、(c2)下述式(6)所示的化合物、(c3)具有下述式(3)所示的基團的聚合性不飽和化合物、(c4)具有碳原子數1~8的烷基的聚合性不飽和化合物以及(c5)在一分子中具有兩個以上不飽和鍵的聚合性不飽和化合物的聚合性不飽和化合物的共聚物,[C]共聚物是由化合物(c1)25~35質量%,化合物(c2)20~30質量%,化合物(c3)15~20質量%,化合物(c4)25~35質量%,以及化合物(c5)1~5質量%構成的聚合性不飽和化合物的共聚物,CH2 =CR1 COOC2 H4 Cβ F2β+1 (5)式(5)中,R1 是氫原子或甲基,β是1~8的整數,CH2 =CR2 COO(C2 H4 O)a R3 (6)式(6)中,R2 是氫原子或甲基,R3 是碳原子數為1~12的烷基,重複單元數a的數均值是4~12, 式(3)中,R4 、R5 、R6 、R7 和R8 各自獨立地是碳原子數1~20的烷基、苯基或下述式(4)所示的基團,b是0~3的整數, 式(4)中,R9 、R10 和R11 各自獨立地是碳原子數1~20的烷基或苯基,c是0~3的整數。A positive-type radiation linear composition comprising: [A] a decane polymer, [B] a quinonediazide compound, and [C] comprising (c1) a compound represented by the following formula (5), ( C2) a compound represented by the following formula (6), (c3) a polymerizable unsaturated compound having a group represented by the following formula (3), and (c4) a polymerization of an alkyl group having 1 to 8 carbon atoms; a copolymer of a polyunsaturated compound and (c5) a polymerizable unsaturated compound having a polymerizable unsaturated compound having two or more unsaturated bonds in one molecule, and the [C] copolymer is a mass of 25 to 35 of the compound (c1) %, the compound (c2) is 20 to 30% by mass, the compound (c3) is 15 to 20% by mass, the compound (c4) is 25 to 35% by mass, and the compound (c5) is 1 to 5% by mass of the polymerizable unsaturated compound. Copolymer, CH 2 =CR 1 COOC 2 H 4 C β F 2β+1 (5) In the formula (5), R 1 is a hydrogen atom or a methyl group, β is an integer of 1-8, and CH 2 =CR 2 COO (C 2 H 4 O) a R 3 (6) In the formula (6), R 2 is a hydrogen atom or a methyl group, R 3 is an alkyl group having 1 to 12 carbon atoms, and the number average of the number of repeating units a is 4~12, In the formula (3), R 4 , R 5 , R 6 , R 7 and R 8 are each independently an alkyl group having 1 to 20 carbon atoms, a phenyl group or a group represented by the following formula (4), b Is an integer from 0 to 3, In the formula (4), R 9 , R 10 and R 11 are each independently an alkyl group having 1 to 20 carbon atoms or a phenyl group, and c is an integer of 0 to 3. 如申請專利範圍第1項之正型感放射線性組成物,其中[A]矽氧烷聚合物是下述式(7)所示的水解性矽烷化合物的水解縮合物,(R12 )x -Si-(OR13 )4-x (7)式(7)中,R12 是碳原子數為1~20的非水解性有機基團,R13 是碳原子數為1~4的烷基,x是0~3的整數。The positive-type radiation-sensitive linear composition of the first aspect of the invention, wherein the [A]methoxyl polymer is a hydrolysis condensate of the hydrolyzable decane compound represented by the following formula (7), (R 12 ) x - Si-(OR 13 ) 4-x (7) In the formula (7), R 12 is a non-hydrolyzable organic group having 1 to 20 carbon atoms, and R 13 is an alkyl group having 1 to 4 carbon atoms. x is an integer from 0 to 3. 如申請專利範圍第1項之正型感放射線性組成物,其進一步含有[D]感熱性酸產生劑或感熱性鹼產生劑。 A positive-type radiation-sensitive linear composition according to claim 1, which further comprises a [D] sensible acid generator or a sensible base generator. 如申請專利範圍第1項之正型感放射線性組成物,其進一步含有[E]脫水劑。 The positive-type radiation-sensitive composition of claim 1, further comprising [E] a dehydrating agent. 如申請專利範圍第1至4項中任一項之正型感放射線性組成物,其用於形成顯示元件的層間絕緣膜。 The positive-type radiation-sensitive composition according to any one of claims 1 to 4, which is used for forming an interlayer insulating film of a display element. 一種顯示元件用層間絕緣膜之形成方法,該方法包括:(1)在基板上形成如申請專利範圍第5項之正型感放射線性組成物的塗膜的步驟, (2)對步驟(1)形成的塗膜的至少一部分照射放射線的步驟,(3)將步驟(2)中照射了放射線的塗膜顯影的步驟,以及(4)加熱在步驟(3)中顯影的塗膜的步驟。 A method of forming an interlayer insulating film for a display element, the method comprising: (1) a step of forming a coating film of a positive-type radiation-sensitive linear composition of claim 5 on a substrate, (2) a step of irradiating at least a part of the coating film formed in the step (1) with radiation, (3) a step of developing the coating film irradiated with radiation in the step (2), and (4) heating in the step (3) The step of developing the coated film. 一種由如申請專利範圍第5項之正型感放射線性組成物所形成的顯示元件之層間絕緣膜。 An interlayer insulating film of a display element formed of a positive-type radiation-sensitive composition as in the fifth aspect of the patent application.
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