TWI487620B - Low thermal conductivity membrane and producing method thereof and membrane distillation apparatus - Google Patents

Low thermal conductivity membrane and producing method thereof and membrane distillation apparatus Download PDF

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TWI487620B
TWI487620B TW102148631A TW102148631A TWI487620B TW I487620 B TWI487620 B TW I487620B TW 102148631 A TW102148631 A TW 102148631A TW 102148631 A TW102148631 A TW 102148631A TW I487620 B TWI487620 B TW I487620B
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low thermal
conductive film
thermal conductive
modified
particles
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TW102148631A
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TW201524763A (en
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meng shun Huang
Chia Hua Ho
yu yang Su
Ren Yang Horng
Teh Ming Liang
Tsui Jung Yang
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Ind Tech Res Inst
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Description

低導熱薄膜、其製法及具有該薄膜之薄膜蒸餾裝置Low thermal conductive film, preparation method thereof and thin film distillation device having the same

本揭露有關於薄膜蒸餾技術領域,尤係關於一種低導熱薄膜、其製法及具有該薄膜之薄膜蒸餾裝置。The present disclosure relates to the field of thin film distillation technology, and more particularly to a low thermal conductivity film, a process for the same, and a thin film distillation apparatus having the same.

薄膜蒸餾在水回收再利用方面目前尚需克服薄膜通量尚低之問題,而溫度極化現象係造成通量的衰減之重要因素。目前針對薄膜蒸餾系統中,由於熱傳損失所造成的溫度極化現象,是以增加掃流(crossflow)速度與模組設計等方式進行極化改善,但同時會增加設備投資成本及能耗等問題。Thin film distillation still needs to overcome the problem of low film flux in water recovery and reuse, and temperature polarization is an important factor in the attenuation of flux. At present, in the thin film distillation system, the temperature polarization phenomenon caused by the heat transfer loss is improved by increasing the crossflow speed and the module design, but at the same time increasing the equipment investment cost and energy consumption. problem.

因此,為改善溫度極化對系統造成的影響,實有必要開發其他方式,以解決此種問題,提昇薄膜蒸餾技術的競爭力。Therefore, in order to improve the impact of temperature polarization on the system, it is necessary to develop other ways to solve this problem and improve the competitiveness of thin film distillation technology.

本揭露提供一種低導熱薄膜製造方法,係包括提供經改質且具有疏水性之複數中孔洞粒子;以及混合該經改質之複數中孔洞粒子於具有聚合物之溶液中,以得到電紡溶 液,並靜電紡絲該電紡溶液以得到該低導熱薄膜。The present disclosure provides a method for fabricating a low thermal conductive film, comprising providing a modified and hydrophobic multi-media pore particle; and mixing the modified plurality of intermediate pore particles in a solution having a polymer to obtain electrospinning And electrospinning the electrospinning solution to obtain the low thermal conductive film.

根據前述之製法,本揭露復提供一種低導熱薄膜,係包括複數層聚合物纖維層,各該聚合物纖維層係包括複數聚合物纖維;以及經改質之複數中孔洞粒子,係位於各該聚合物纖維層層間、至少一聚合物纖維中、或該聚合物纖維層中之複數聚合物纖維之間,且該低導熱薄膜中之經改質之中孔洞粒子含量係1至50wt%。According to the foregoing method, the present disclosure provides a low thermal conductive film comprising a plurality of layers of polymer fibers, each of the polymer fiber layers comprising a plurality of polymer fibers; and a modified plurality of medium pore particles, each of which is located Between the polymer fiber layer layers, at least one of the polymer fibers, or between the plurality of polymer fibers in the polymer fiber layer, and the modified medium particle content in the low heat conductive film is 1 to 50% by weight.

於另一態樣中,本揭露提供一種薄膜蒸餾裝置,係包括容槽;以及本揭露之低導熱薄膜,係設於該容槽中,以分隔出高溫室和低溫室,其中,該高溫室係供注入待處理水,該低溫室係接收自該低導熱薄膜產出之滲透水。In another aspect, the present disclosure provides a thin film distillation apparatus including a cuvette; and the low thermal conductive film of the present disclosure is disposed in the housing to separate a high greenhouse and a low greenhouse, wherein the high greenhouse It is for injecting water to be treated, and the low greenhouse receives the permeated water produced from the low thermal conductive film.

由上可知,本揭露藉由將經改質之疏水性中孔洞粒子導入所配置的電紡溶液中,以靜電紡絲技術製作薄膜蒸餾用的低導熱型奈米纖維分離薄膜,可降低溫度極化現象,提升薄膜的特性保溫值。As can be seen from the above, the present invention can reduce the temperature of the low-heat-conducting nanofiber separation film for thin film distillation by electrospinning by introducing the modified hydrophobic mesopores into the electrospinning solution. The phenomenon of increasing the thermal insulation value of the film.

101‧‧‧供水槽101‧‧‧Water supply tank

101a‧‧‧待處理水101a‧‧‧ water to be treated

102、105、107、110‧‧‧管路102, 105, 107, 110‧‧‧ pipeline

103、108‧‧‧幫浦103, 108‧‧‧

104‧‧‧容槽104‧‧‧ 容容

104a‧‧‧高溫室104a‧‧‧High Greenhouse

104b‧‧‧低導熱薄膜104b‧‧‧Low thermal conductivity film

104c‧‧‧低溫室104c‧‧‧low greenhouse

106、111‧‧‧熱交換器106, 111‧‧ ‧ heat exchanger

109‧‧‧儲水槽109‧‧‧Water storage tank

109a‧‧‧滲透水109a‧‧‧ Penetration of water

第1圖係顯示薄膜蒸餾裝置之示意圖;第2圖係顯示中孔洞粒子之SEM圖;第3圖係顯示中孔洞粒子之TEM圖;第4圖係顯示未添加經改質之中孔洞粒子之薄膜;第5圖係顯示添加1wt%經改質之複數中孔洞粒子之低導熱薄膜;第6圖係顯示添加10wt%經改質之複數中孔洞粒子之低導熱薄膜; 第7圖係顯示添加50wt%經改質之複數中孔洞粒子之低導熱薄膜;以及第8圖係顯示中孔洞粒子不同添加量之低導熱薄膜通量圖。Fig. 1 is a schematic view showing a thin film distillation apparatus; Fig. 2 is an SEM image showing the pores in the middle hole; Fig. 3 is a TEM image showing the particles in the middle hole; and Fig. 4 is a view showing the pore particles in the modified medium. a film; FIG. 5 shows a low thermal conductive film added with 1 wt% of the modified plurality of void particles; and FIG. 6 shows a low thermal conductive film added with 10 wt% of the modified plurality of void particles; Fig. 7 is a view showing a low thermal conductive film in which 50 wt% of the modified plurality of void particles are added; and Fig. 8 is a graph showing a low thermal conductivity film flux of different amounts of the void particles.

以下藉由特定的具體實施例說明實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本揭露之其他優點及功效。Other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

本揭露提供一種低導熱薄膜製造方法,包括提供中孔洞粒子,其係經改質使其具有疏水性;以及混合該經改質之中孔洞粒子於具有聚合物之溶液中,以得到電紡溶液,並靜電紡絲該電紡溶液以得到該低導熱薄膜。The present disclosure provides a method for producing a low thermal conductive film comprising providing mesoporous particles which are modified to be hydrophobic; and mixing the modified interstitial particles in a solution having a polymer to obtain an electrospinning solution And electrospinning the electrospinning solution to obtain the low thermal conductive film.

本揭露中孔洞粒子之製造方法並無特別限制,其可使用傳統之溶膠凝膠法(sol-gel)製備,例如,將前驅物分散於含界面活性劑之溶液中,以進行自組裝反應;以及移除該界面活性劑。The method for producing the pore particles in the present disclosure is not particularly limited, and it can be prepared by a conventional sol-gel method, for example, dispersing a precursor in a solution containing a surfactant to carry out a self-assembly reaction; And removing the surfactant.

於一具體實施例中,該中孔洞粒子以溶膠凝膠法(sol-gel)製備時,可利用界面活性劑所形成的微胞與無機前驅物,例如經稀釋之二氧化矽前驅物(dilute silica precursor)進行自組裝(self assembly)反應,再將界面活性劑去除而成,所得到之該中孔洞粒子之孔徑約2至5nm,粒徑約0.3至4μ m、孔隙率約45%至80%。此外,中孔洞粒子之孔徑若過大,則粒子強度不足易碎裂。中孔洞粒子之粒徑若過大,則紡絲時易阻塞針孔,而且易導致所製得之低導熱薄 膜孔洞太大,處理效能降低。In one embodiment, the mesoporous particles are prepared by a sol-gel method using a surfactant formed by a surfactant and an inorganic precursor, such as a diluted ceria precursor (dilute). Silica precursor) performing a self-assembly reaction and removing the surfactant, and the obtained pore particles have a pore diameter of about 2 to 5 nm, a particle diameter of about 0.3 to 4 μm , and a porosity of about 45%. 80%. In addition, if the pore diameter of the mesoporous particles is too large, the particle strength is insufficient to be easily broken. If the particle size of the mesoporous particles is too large, the pinholes are easily blocked during spinning, and the resulting low thermal conductive film pores are too large, and the treatment efficiency is lowered.

具體而言,無機的前驅物可為偏鋁酸鈉(sodium aluminate)、四甲基銨矽酸鹽(tetramethyl ammonium silicate)或二氧化矽。至於界面活性劑之實例,如以不帶電荷的胺類界面活性劑如Pluronic P123當模板,係在酸性條件下所形成的微胞(micelle),經使無機前驅物隨著模板進行反應成形,再將界面活性劑去除,便可形成中孔洞粒子,所得粒徑≧1μ m。或者,以帶正電性四極銨鹽如十六烷基三甲基溴化銨(CTABr)當模板,在鹼性條件下與帶正電荷矽氧原子經由氫鍵的作用力下合成形成的微胞進行自組裝反應(self assembly),再將界面活性劑去除而形成中孔洞粒子。Specifically, the inorganic precursor may be sodium aluminate, tetramethyl ammonium silicate or cerium oxide. As an example of a surfactant, such as an uncharged amine surfactant such as Pluronic P123 as a template, a micelle formed under acidic conditions is formed by reacting an inorganic precursor with a template. The surfactant is removed to form mesopores, and the resulting particle size is μ1 μm . Alternatively, a microelectrode formed by a positively charged tetrapolar ammonium salt such as cetyltrimethylammonium bromide (CTABr) as a template under a basic condition and a positively charged helium oxygen atom via a hydrogen bond The cells are self-assembled and the surfactant is removed to form mesopores.

於另一具體實施例中,該經改質之中孔洞粒子的材質可為活性碳、碳黑、奈米碳管、或石墨烯。In another embodiment, the modified pore particles may be made of activated carbon, carbon black, carbon nanotubes, or graphene.

於改質該中孔洞粒子使具疏水性之製備中,可利用共聚合法或接枝法將疏水基團嫁接至中孔洞粒子之表面與孔洞內表面中,其中,該疏水基團可為C1 -C10 烷基、乙烯基、丙烯基、或苯基。In the preparation of the intermediate pores to make the hydrophobicity, the hydrophobic group may be grafted to the surface of the mesoporous particles and the inner surface of the pore by copolymerization or grafting, wherein the hydrophobic group may be C 1 -C 10 alkyl, vinyl, propenyl, or phenyl.

共聚合法之製備方法包括:將具有疏水基團之前驅物分散於含界面活性劑之溶液中,以進行自組裝反應,其中,前驅物可為複數種類,但至少一種之前驅物具有疏水基團;以及移除該界面活性劑,以得到表面與孔洞內表面中嫁接有該疏水基團之經改質之中孔洞粒子。The preparation method of the copolymerization method comprises: dispersing a precursor having a hydrophobic group in a solution containing a surfactant to perform a self-assembly reaction, wherein the precursor may be a plurality of species, but at least one of the precursors has a hydrophobic group And removing the surfactant to obtain modified intermediate pore particles grafted with the hydrophobic group on the surface and the inner surface of the pore.

舉例而言,將中孔洞粒子賦予官能化,導入如乙烯基等烯基之疏水性官能基基團係可以共聚法化學反應進行, 例如將四乙氧基矽烷(TEOS)與乙烯基三乙氧基矽烷(TEVS)作為無機前驅物,在鹼性下以CTABr當模板,在常溫下經自組裝後,並以乙醇/水萃取方式移除模板,過濾乾燥後得到表面具乙烯基基團的疏水性中孔洞粒子。For example, by imparting functionalization to mesoporous particles, introduction of a hydrophobic functional group such as an alkenyl group such as a vinyl group can be carried out by a copolymerization chemical reaction. For example, tetraethoxy decane (TEOS) and vinyl triethoxy decane (TEVS) are used as inorganic precursors, and CTABr is used as a template under alkaline conditions, self-assembled at room temperature, and extracted by ethanol/water. The template was removed, and after filtration, the hydrophobic medium-porous particles having a vinyl group on the surface were obtained.

例如甲基或其他烷基之疏水性官能基基團之導入係以接枝方式進行,例如將中孔洞粒子置入六甲基二矽氮烷(HMDS)/甲苯溶液中,於100℃下反應一小時後,過濾乾燥得到含甲基基團的疏水性中孔洞粒子。For example, the introduction of a hydrophobic functional group of a methyl group or another alkyl group is carried out by grafting, for example, by placing mesoporous particles in a hexamethyldioxane (HMDS)/toluene solution and reacting at 100 ° C. After one hour, it was filtered and dried to obtain a hydrophobic medium-containing pore particle containing a methyl group.

官能基之驗證可由傅立葉轉換紅外線光譜儀(FTIR)確認,熱重分析儀(TGA)可計算出含有官能基的百分比率。另外,含疏水性中孔洞粒子的驗證可由有機/水溶液做分層與否確認。疏水性中孔洞粒子會存在於上層有機相中。The verification of the functional group can be confirmed by Fourier transform infrared spectroscopy (FTIR), and the thermogravimetric analyzer (TGA) can calculate the percentage ratio of the functional group. In addition, the verification of the hydrophobic medium-containing pore particles can be confirmed by delamination of the organic/aqueous solution. Hydrophobic mesoporous particles are present in the upper organic phase.

在前述靜電紡絲之步驟中,經改質之中孔洞粒子的混合量佔該電紡溶液之1至50wt%,以提升薄膜的特性保溫值。另外,所使用之該聚合物可選自PP、PTFE、PVDF及聚二氟乙烯-六氟丙烯(PVDF-co-HFP)所組成群組之至少一者。In the foregoing electrospinning step, the amount of the pore particles mixed in the modified portion is from 1 to 50% by weight of the electrospinning solution to increase the characteristic holding value of the film. Additionally, the polymer used may be selected from at least one of the group consisting of PP, PTFE, PVDF, and polydifluoroethylene-hexafluoropropylene (PVDF-co-HFP).

根據前述之製法,本揭露復提供一種低導熱薄膜,包括複數層聚合物纖維層,各該聚合物纖維層包括複數聚合物纖維;以及經改質之複數中孔洞粒子,該經改質之複數中孔洞粒子可能位於各該聚合物纖維層層間、至少一聚合物纖維中、或該聚合物纖維層中之複數聚合物纖維之間,且該低導熱薄膜中之該經改質之中孔洞粒子含量約1至50wt%。According to the foregoing method, the present disclosure provides a low thermal conductive film comprising a plurality of layers of polymer fibers, each of the polymer fiber layers comprising a plurality of polymer fibers; and a modified plurality of medium pore particles, the modified plural The mesoporous particles may be located between each of the polymer fiber layer layers, at least one of the polymer fibers, or between the plurality of polymer fibers in the polymer fiber layer, and the modified medium pore particles in the low thermal conductive film The content is about 1 to 50% by weight.

於一具體實施例中,該聚合物纖維可選自PP、PTFE、PVDF及聚二氟乙烯-六氟丙烯所組成群組之至少一者。In one embodiment, the polymer fiber can be selected from at least one of the group consisting of PP, PTFE, PVDF, and polyvinylidene fluoride-hexafluoropropylene.

通常,該經改質之中孔洞粒子的材質主要可為二氧化矽、活性碳、碳黑、奈米碳管、或石墨烯。該中孔洞粒子之孔徑約2至5nm,粒徑約0.3至4μ m、孔隙率約45%至80%。Generally, the material of the modified pore particles may be mainly cerium oxide, activated carbon, carbon black, carbon nanotubes, or graphene. The mesoporous particles have a pore size of about 2 to 5 nm, a particle diameter of about 0.3 to 4 μm , and a porosity of about 45% to 80%.

於一實施例中,該經改質之中孔洞粒子具有疏水基團,且該疏水基團可為C1 -C10 烷基、乙烯基、丙烯基、或苯基。In one embodiment, the modified pore particles have a hydrophobic group, and the hydrophobic group can be a C 1 -C 10 alkyl group, a vinyl group, a propylene group, or a phenyl group.

又,於本揭露之低導熱薄膜中,其具有尺寸約0.05至1μ m之複數孔洞,且該低導熱薄膜之孔隙率約40%至81%,接觸角約120度至140度,特性保溫值約0.09至0.12℃‧m2 /W。Moreover, in the low thermal conductive film of the present disclosure, it has a plurality of pores having a size of about 0.05 to 1 μm , and the low thermal conductive film has a porosity of about 40% to 81%, and a contact angle of about 120 to 140 degrees. The value is about 0.09 to 0.12 ° C ‧ m 2 /W.

於一具體實施例中,透過靜電紡絲之低導熱薄膜,其厚度約30至90μ m。又,該聚合物纖維之直徑約200至230nm。In one embodiment, the electrospun low thermal conductive film has a thickness of about 30 to 90 μm . Further, the polymer fibers have a diameter of about 200 to 230 nm.

於另一具體實施例中,該低導熱薄膜復包括支撐材,係形成於該低導熱薄膜之一側表面,以適用於薄膜蒸餾裝置。In another embodiment, the low thermal conductive film comprises a support material formed on one side surface of the low thermal conductive film to be suitable for a thin film distillation apparatus.

本揭露復提供一種薄膜蒸餾裝置,如第1圖所示,係包括容槽104;以及本揭露之低導熱薄膜104b,係設於該容槽104中,以分隔出高溫室104a和低溫室104c,其中,該高溫室104a係供注入待處理水101a,該低溫室104c係接收自該低導熱薄膜104b產出之滲透水109a。The present disclosure provides a thin film distillation apparatus, as shown in FIG. 1, including a cavity 104; and the low thermal conductive film 104b of the present disclosure is disposed in the housing 104 to separate the high greenhouse 104a and the low greenhouse 104c. The high temperature chamber 104a is for injecting water to be treated 101a, and the low temperature chamber 104c receives the permeated water 109a produced from the low thermal conductive film 104b.

於另一具體實施例中,該薄膜蒸餾裝置復包括熱交換器106,以維持該待處理水101a之溫度及其與該滲透水109a之溫差。於又一具體實施例中,復可包括另一熱交換器111,以冷凝該滲透水109a。In another embodiment, the thin film distillation apparatus further includes a heat exchanger 106 to maintain the temperature of the water to be treated 101a and its temperature difference from the permeate water 109a. In yet another embodiment, the complex heat exchanger 111 is included to condense the permeate water 109a.

於一具體實施例中,該待處理水101a透過幫浦103抽取,經由管路102流入該容槽104中之該高溫室104a,而管路105亦可將部分高溫室104a之待處理水101a送回供水槽101。該容槽104中所產生的水蒸氣通過該低導熱薄膜104b進入該低溫室104c,再於該低溫室104c冷凝該滲透水109a,透過幫浦108抽取經由管路107流入儲水槽109中,而管路110亦可將儲水槽109中之水體送回該容槽104之低溫室104c。In a specific embodiment, the water to be treated 101a is pumped through the pump 103, flows into the high temperature chamber 104a in the tank 104 via the pipeline 102, and the pipeline 105 can also treat the water to be treated 101a in the high greenhouse 104a. Returned to the water supply tank 101. The water vapor generated in the tank 104 enters the low temperature chamber 104c through the low heat conductive film 104b, and the permeate water 109a is condensed in the low temperature chamber 104c, and is pumped through the pump 108 into the water storage tank 109 via the pipeline 107. The line 110 can also return the water in the water storage tank 109 to the low temperature chamber 104c of the tank 104.

實施例Example 中孔洞粒子之製備Preparation of medium pore particles

使用傳統之溶膠凝膠法(sol-gel)製備,包含混合無機的前驅物四甲基銨矽酸鹽(1mmole,Aldrich)及作為模板之十六烷基三甲基溴化銨(CTABr,0.125mmole,Aldrich),在鹼性條件下(含NaOH,0.3mmole及水1197mmole)進行自組裝反應(self assernbly),再將模板去除而形成中孔洞粒子。根據第2圖之SEM圖及第3圖之TEM圖所示,該中孔洞粒子主要介於0.3至4μ m,孔徑2至5nm。Prepared using a conventional sol-gel process comprising a mixed inorganic precursor tetramethylammonium citrate (1 mmole, Aldrich) and cetyltrimethylammonium bromide as a template (CTABr, 0.125) Mume, Aldrich), self-assembly reaction (self assernbly) under alkaline conditions (containing NaOH, 0.3 mmole and water 1197 mmole), and then removing the template to form mesopores. According to the SEM image of Fig. 2 and the TEM image of Fig. 3, the mesoporous particles are mainly between 0.3 and 4 μm and have a pore diameter of 2 to 5 nm.

疏水性中孔洞粒子之製備Preparation of hydrophobic medium pore particles

根據前述疏水性中孔洞粒子之製法,將不同的化學官能基嫁接至孔洞中,進行疏水性官能化改質,製備疏水性 中孔洞粒子。According to the method for preparing the hydrophobic medium pore particles, different chemical functional groups are grafted into the pores to perform hydrophobic functional modification to prepare hydrophobicity. Medium hole particles.

導入乙烯基基團之實例中,係將四乙氧基矽烷(TEOS,0.75mmole,Aldrich)與乙烯基三乙氧基矽烷(TEVS,0.25mmole,Aldrich)作為無機前驅物,在PH介於10至12下以CTABr(0.3mmole)當模板,在常溫下經自組裝後,並以乙醇/水萃取方式移除模板,過濾乾燥後得到表面具乙烯基基團的疏水性中孔洞粒子。In the example of introducing a vinyl group, tetraethoxydecane (TEOS, 0.75 mmole, Aldrich) and vinyltriethoxydecane (TEVS, 0.25 mmole, Aldrich) are used as inorganic precursors at a pH of 10 The template was removed by CTABr (0.3 mmole) at 12 °C, and after self-assembly at room temperature, the template was removed by ethanol/water extraction, and dried by filtration to obtain hydrophobic mesoporous particles having a vinyl group on the surface.

導入甲基基團之實例中,係將前述實例中之中孔洞粒子(1g)置入六甲基二矽氮烷(HMDS)/甲苯溶液中(100ml,體積比例為2/1),於100℃下反應一小時後,過濾乾燥得到含甲基基團的疏水性中孔洞粒子。In the example of introducing a methyl group, the pore particles (1 g) in the above examples are placed in a hexamethyldioxane (HMDS) / toluene solution (100 ml, volume ratio of 2/1) at 100 After reacting at ° C for one hour, it was filtered and dried to obtain a hydrophobic medium-containing pore particle containing a methyl group.

經由共聚合得到疏水性官能基-CH2 =CH2 ,由FTIR光譜圖可在1680-1610cm-1 觀察到弱波峰。而以接枝法得到末端含-CH3 官能基的該經改質之中孔洞粒子,在FTIR圖譜上可觀察1455與1378cm-1 的C-H”彎曲震動訊號。A hydrophobic functional group -CH 2 =CH 2 was obtained via copolymerization, and a weak peak was observed from 1680-1610 cm -1 from the FTIR spectrum. The modified medium pore particles having a -CH 3 functional group at the end were obtained by grafting, and the CH" bending vibration signals of 1455 and 1378 cm -1 were observed on the FTIR spectrum.

低導熱薄膜之製備Preparation of low thermal conductivity film 實施例1Example 1

將以-CH2 =CH2 化學官能基改質的複數中孔洞粒子導入以聚二氟乙烯-六氟丙烯(PVDF-co-HFP)為原料及二甲基甲醯胺(Dimethylformamide,DMF)為溶劑所配置的電紡溶液中,添加1wt%的經改質之複數中孔洞粒子,再以靜電紡絲技術製備低導熱薄膜。A plurality of mesoporous particles modified with a -CH 2 =CH 2 chemical functional group are introduced into a material of polyvinylidene fluoride-hexafluoropropylene (PVDF-co-HFP) and dimethylformamide (DMF). In the electrospinning solution in which the solvent is disposed, 1 wt% of the modified plurality of pores in the plurality of pores are added, and a low thermal conductive film is prepared by an electrospinning technique.

實施例2至4Examples 2 to 4

實施例2至4為根據實施例1的步驟,分別添加佔10wt%、20wt%、50wt%的經改質之複數中孔洞粒子,再以靜電紡絲技術製備低導熱薄膜。Examples 2 to 4 are the steps of Example 1, respectively, adding 10% by weight, 20% by weight, and 50% by weight of the modified plurality of intermediate pore particles, and then preparing a low thermal conductive film by an electrospinning technique.

比較例1Comparative example 1

於聚二氟乙烯-六氟丙烯(PVDF-co-HFP)為原料及二甲基甲醯胺(Dimethylformamide,DMF)為溶劑所配置的電紡溶液中,不添加複數該經改質之中孔洞粒子,進行靜電紡絲技術製備低導熱薄膜,組成如表1所示,且各該低導熱薄膜之SEM照片係第4至7圖所示。In the electrospinning solution prepared by using polyvinylidene fluoride-hexafluoropropylene (PVDF-co-HFP) as a raw material and dimethylformamide (DMF) as a solvent, no modified plurality of modified pores are added. The particles were subjected to an electrospinning technique to prepare a low thermal conductive film, and the composition thereof is shown in Table 1, and the SEM photographs of the low thermal conductive films are shown in Figs. 4 to 7.

測試test

本測試例所使用之薄膜蒸餾系統條件包括:高溫進水端與低溫產水端分別為配製的3,000μS/cm NaCl水溶液與去離子水,兩側以薄膜隔開,低溫產水端與高溫進水端水溫分別為30℃與70℃及1.1×10-2 m/sec的掃流速度。由第8圖所示之數據得知,當經改質之複數中孔洞粒子添加量由0wt%增加至50wt%時,系統之通量由8.1LMH上升約1.5倍至11.31LMH。The conditions of the thin film distillation system used in this test example include: a high-temperature inlet end and a low-temperature water-producing end, respectively, a prepared 3,000 μS/cm NaCl aqueous solution and deionized water, separated by a film on both sides, and a low-temperature water-producing end and a high-temperature inlet. The water temperature at the water end is 30 ° C and 70 ° C and a sweep speed of 1.1 × 10 -2 m / sec. From the data shown in Fig. 8, it is known that when the amount of pore particles added in the modified plural increases from 0 wt% to 50 wt%, the flux of the system rises by about 1.5 times from 8.1 LMH to 11.31 LMH.

由於未添加經改質之中孔洞粒子與添加50wt%經改質之複數中孔洞粒子之低導熱薄膜分別以ASTM D1518-1985試驗方法測得其特性保溫值分別為0.09與0.12℃‧m2 /W,顯示控制並降低薄膜材料之導熱性質將有效提升薄膜蒸餾系統效能。另外,以本揭露低導熱薄膜進行測試,產水端導電度皆小於3μS/cm,脫鹽率達99.9%,據此可知,本揭露低導熱薄膜除提升通量外,仍能維持優異的脫鹽率。The thermal insulation values of the modified low-heat-conducting film were not 0.07 and 0.12 °C ‧ m 2 / respectively. W, showing control and reducing the thermal conductivity of the film material will effectively improve the performance of the thin film distillation system. In addition, the low thermal conductivity film is tested in the present invention, the conductivity of the water-producing end is less than 3 μS/cm, and the salt rejection rate is 99.9%. According to the above, the low thermal conductivity film can maintain excellent salt rejection rate in addition to increasing flux. .

101‧‧‧供水槽101‧‧‧Water supply tank

101a‧‧‧待處理水101a‧‧‧ water to be treated

102、105、107、110‧‧‧管路102, 105, 107, 110‧‧‧ pipeline

103、108‧‧‧幫浦103, 108‧‧‧

104‧‧‧容槽104‧‧‧ 容容

104a‧‧‧高溫室104a‧‧‧High Greenhouse

104b‧‧‧低導熱薄膜104b‧‧‧Low thermal conductivity film

104c‧‧‧低溫室104c‧‧‧low greenhouse

106、111‧‧‧熱交換器106, 111‧‧ ‧ heat exchanger

109‧‧‧儲水槽109‧‧‧Water storage tank

109a‧‧‧滲透水109a‧‧‧ Penetration of water

Claims (20)

一種低導熱薄膜之製法,包括:提供經改質且具有疏水性之複數中孔洞粒子;以及混合該經改質之複數中孔洞粒子於具有聚合物之溶液中,以得到電紡溶液,並靜電紡絲該電紡溶液以得到該低導熱薄膜。A method for preparing a low thermal conductive film, comprising: providing a modified and hydrophobic multi-media pore particle; and mixing the modified plurality of intermediate pore particles in a solution having a polymer to obtain an electrospinning solution, and electrostatically The electrospinning solution was spun to obtain the low thermal conductive film. 如申請專利範圍第1項之低導熱薄膜之製法,其中,該經改質之中孔洞粒子之材質係二氧化矽、活性碳、碳黑、奈米碳管、或石墨烯。The method for producing a low thermal conductive film according to claim 1, wherein the material of the modified void particles is ceria, activated carbon, carbon black, carbon nanotubes, or graphene. 如申請專利範圍第1項之低導熱薄膜之製法,其中,該經改質之中孔洞粒子之孔徑係2至5nm,粒徑係0.3至4μ m、孔隙率係45%至80%。The method for producing a low thermal conductive film according to claim 1, wherein the modified pores have a pore size of 2 to 5 nm, a particle diameter of 0.3 to 4 μm , and a porosity of 45% to 80%. 如申請專利範圍第1項之低導熱薄膜之製法,係包括製備該經改質之複數中孔洞粒子,且該製備方法包括:將具有疏水基團之前驅物分散於含界面活性劑之溶液中,以進行自組裝反應;以及移除該界面活性劑,以得到表面與孔洞內表面中嫁接有該疏水基團之該經改質之中孔洞粒子。The method for preparing a low thermal conductive film according to claim 1 includes preparing the modified plurality of medium pore particles, and the preparation method comprises: dispersing a hydrophobic group precursor in a solution containing a surfactant; And performing the self-assembly reaction; and removing the surfactant to obtain the modified interstitial particles grafted with the hydrophobic group in the surface and the inner surface of the cavity. 如申請專利範圍第1項之低導熱薄膜之製法,係包括製備該經改質之複數中孔洞粒子,且該製備方法係利用接枝法將疏水基團嫁接至中孔洞粒子之表面與孔洞內表面中。The method for preparing a low thermal conductive film according to claim 1 includes preparing the modified plurality of medium pore particles, and the preparation method is to graft the hydrophobic group to the surface of the medium pore particle and the pore by a grafting method. In the surface. 如申請專利範圍第4或5項之低導熱薄膜之製法,其 中,該疏水基團係C1 -C10 烷基、乙烯基、丙烯基、或苯基。A method of producing a low thermal conductive film according to claim 4 or 5, wherein the hydrophobic group is a C 1 -C 10 alkyl group, a vinyl group, a propylene group, or a phenyl group. 如申請專利範圍第1項之低導熱薄膜之製法,其中,該經改質之複數中孔洞粒子的混合量係佔該電紡溶液之1至50wt%。The method for producing a low thermal conductive film according to claim 1, wherein the modified plurality of void particles are mixed in an amount of from 1 to 50% by weight of the electrospinning solution. 如申請專利範圍第1項之低導熱薄膜之製法,其中,該聚合物係選自PP、PTFE、PVDF及聚二氟乙烯-六氟丙烯(PVDF-co-HFP)所組成群組之至少一者。The method for producing a low thermal conductive film according to claim 1, wherein the polymer is at least one selected from the group consisting of PP, PTFE, PVDF, and polyvinylidene fluoride-hexafluoropropylene (PVDF-co-HFP). By. 一種低導熱薄膜,包括:複數層聚合物纖維層,各該聚合物纖維層係包括複數聚合物纖維;以及經改質之複數中孔洞粒子,係位於各該聚合物纖維層層間、至少一聚合物纖維中、或該聚合物纖維層中之複數聚合物纖維之間,且該低導熱薄膜中之經改質之中孔洞粒子含量係1至50wt%。A low thermal conductivity film comprising: a plurality of layers of polymer fibers, each of the polymer fiber layers comprising a plurality of polymer fibers; and a modified plurality of medium pore particles located between each of the polymer fiber layers and at least one polymerized Between the plurality of polymer fibers in the fiber or in the polymer fiber layer, and the modified void particle content in the low heat conductive film is 1 to 50% by weight. 如申請專利範圍第9項之低導熱薄膜,其中,該聚合物纖維係選自PP、PTFE、PVDF及聚二氟乙烯-六氟丙烯所組成群組之至少一者。The low thermal conductive film of claim 9, wherein the polymer fiber is at least one selected from the group consisting of PP, PTFE, PVDF, and polyvinylidene fluoride-hexafluoropropylene. 如申請專利範圍第9項之低導熱薄膜,其中,該經改質之中孔洞粒子之材質係二氧化矽、活性碳、碳黑、奈米碳管、或石墨烯。The low thermal conductive film of claim 9, wherein the material of the modified void particles is ceria, activated carbon, carbon black, carbon nanotubes, or graphene. 如申請專利範圍第9項之低導熱薄膜,其中,該經改質之中孔洞粒子之孔徑係2至5nm,粒徑係0.3至4μ m、孔隙率係45%至80%。The low thermal conductive film of claim 9, wherein the modified pore particles have a pore size of 2 to 5 nm, a particle diameter of 0.3 to 4 μm , and a porosity of 45% to 80%. 如申請專利範圍第9項之低導熱薄膜,其中,該經改質之中孔洞粒子具有疏水基團,且該疏水基團係C1 -C10 烷基、乙烯基、丙烯基、或苯基。The low thermal conductive film of claim 9, wherein the modified pore particles have a hydrophobic group, and the hydrophobic group is a C 1 -C 10 alkyl group, a vinyl group, a propylene group, or a phenyl group. . 如申請專利範圍第9項之低導熱薄膜,其具有尺寸係0.05至1μ m之複數孔洞,且該低導熱薄膜之孔隙率係40%至81%,接觸角係大於或等於120度至140度,特性保溫值係0.09℃.m2 /W至0.12℃.m2 /W。A low thermal conductive film according to claim 9 which has a plurality of pores having a size of 0.05 to 1 μm , and the low thermal conductivity film has a porosity of 40% to 81% and a contact angle of 120 to 140 degrees. Degree, characteristic insulation value is 0.09 ° C. m 2 /W to 0.12 ° C. m 2 /W. 如申請專利範圍第9項之低導熱薄膜,其厚度係30至90μ m。The low thermal conductive film of claim 9 is a thickness of 30 to 90 μm . 如申請專利範圍第9項之低導熱薄膜,其中,該聚合物纖維之直徑係200至230nm。The low thermal conductive film of claim 9, wherein the polymer fiber has a diameter of 200 to 230 nm. 如申請專利範圍第9項之低導熱薄膜,復包括支撐材,係形成於該低導熱薄膜之一側表面。A low thermal conductive film according to claim 9 of the patent application, further comprising a support material formed on one side surface of the low thermal conductive film. 一種薄膜蒸餾裝置,包括:容槽;以及如申請專利範圍第9項之低導熱薄膜,係設於該容槽中,以分隔出高溫室和低溫室,其中,該高溫室係供注入待處理水,該低溫室係接收自該低導熱薄膜產出之滲透水。A thin film distillation apparatus comprising: a receiving tank; and a low thermal conductive film according to claim 9 of the patent application, which is disposed in the tank to separate the high greenhouse and the low greenhouse, wherein the high greenhouse is for injection to be treated Water, the low temperature system receives the permeated water produced from the low thermal conductivity film. 如申請專利範圍第18項之薄膜蒸餾裝置,復包括熱交換器,以維持該待處理水之溫度及其與該滲透水之溫差。A thin film distillation apparatus according to claim 18, further comprising a heat exchanger for maintaining a temperature of the water to be treated and a temperature difference from the permeated water. 如申請專利範圍第18項之薄膜蒸餾裝置,復包括另一熱交換器,以冷凝該滲透水。A thin film distillation apparatus according to claim 18, further comprising another heat exchanger for condensing the permeated water.
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CN104740887A (en) 2015-07-01

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