TWI484525B - - Google Patents

Info

Publication number
TWI484525B
TWI484525B TW101143553A TW101143553A TWI484525B TW I484525 B TWI484525 B TW I484525B TW 101143553 A TW101143553 A TW 101143553A TW 101143553 A TW101143553 A TW 101143553A TW I484525 B TWI484525 B TW I484525B
Authority
TW
Taiwan
Application number
TW101143553A
Other languages
Chinese (zh)
Other versions
TW201338011A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201338011A publication Critical patent/TW201338011A/en
Application granted granted Critical
Publication of TWI484525B publication Critical patent/TWI484525B/zh

Links

TW101143553A 2011-12-16 2012-11-21 Temperature adjustable plasma confinement apparatus TW201338011A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110422141.9A CN103165368B (en) 2011-12-16 2011-12-16 The plasm restraint device that a kind of temperature is adjustable

Publications (2)

Publication Number Publication Date
TW201338011A TW201338011A (en) 2013-09-16
TWI484525B true TWI484525B (en) 2015-05-11

Family

ID=48588356

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101143553A TW201338011A (en) 2011-12-16 2012-11-21 Temperature adjustable plasma confinement apparatus

Country Status (2)

Country Link
CN (1) CN103165368B (en)
TW (1) TW201338011A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104299875A (en) * 2013-07-17 2015-01-21 中微半导体设备(上海)有限公司 Inductively coupled plasma processing device
CN106898534B (en) * 2015-12-21 2019-08-06 中微半导体设备(上海)股份有限公司 Plasma confinement ring, plasma processing apparatus and processing method for substrate
CN111383884B (en) * 2018-12-27 2023-03-10 中微半导体设备(上海)股份有限公司 Plasma confinement system and method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW294819B (en) * 1993-12-22 1997-01-01 Tokyo Electron Co Ltd
TW297135B (en) * 1995-03-20 1997-02-01 Hitachi Ltd
TW200616498A (en) * 2004-07-13 2006-05-16 Nordson Corp Ultra high speed uniform plasma processing system
TWI308776B (en) * 2006-12-27 2009-04-11 Advanced Micro Fab Equip Inc A plasma confinement apparatus
JP2011228133A (en) * 2010-04-20 2011-11-10 Sharp Corp Plasma processing device, plasma processing method and method of manufacturing semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6170429B1 (en) * 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
CN101150909B (en) * 2006-09-22 2010-05-12 中微半导体设备(上海)有限公司 Plasm restraint device
CN101196750A (en) * 2006-12-07 2008-06-11 北京北方微电子基地设备工艺研究中心有限责任公司 Reaction chamber
US20080169183A1 (en) * 2007-01-16 2008-07-17 Varian Semiconductor Equipment Associates, Inc. Plasma Source with Liner for Reducing Metal Contamination
JP5357486B2 (en) * 2008-09-30 2013-12-04 東京エレクトロン株式会社 Plasma processing equipment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW294819B (en) * 1993-12-22 1997-01-01 Tokyo Electron Co Ltd
TW297135B (en) * 1995-03-20 1997-02-01 Hitachi Ltd
TW200616498A (en) * 2004-07-13 2006-05-16 Nordson Corp Ultra high speed uniform plasma processing system
TWI308776B (en) * 2006-12-27 2009-04-11 Advanced Micro Fab Equip Inc A plasma confinement apparatus
JP2011228133A (en) * 2010-04-20 2011-11-10 Sharp Corp Plasma processing device, plasma processing method and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
TW201338011A (en) 2013-09-16
CN103165368A (en) 2013-06-19
CN103165368B (en) 2016-02-03

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