TWI483283B - Power transmission device and related plasma system - Google Patents
Power transmission device and related plasma system Download PDFInfo
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- TWI483283B TWI483283B TW102108357A TW102108357A TWI483283B TW I483283 B TWI483283 B TW I483283B TW 102108357 A TW102108357 A TW 102108357A TW 102108357 A TW102108357 A TW 102108357A TW I483283 B TWI483283 B TW I483283B
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Description
本發明係提供一種電力導入設計,尤指一種應用於電漿源,且具較佳安全性的電力導入設計。The invention provides a power introduction design, in particular to a power introduction design which is applied to a plasma source and has better safety.
傳統的真空電漿系統具有多種不同的配置方式,其中一種是將電力導入部設置在一般的大氣環境下,並選擇性於電力導入部之表面設置一絕緣件,同時遠離所有具地極電性之物件,藉此避免高電位物件與電力導入部發生異常放電的情況。此類型的配置方式會限制真空電漿系統之電極與基板間的關係及其系統組成,導致單一電極僅能形成一側電漿來製備一側基板的製程限制。此外,另一種傳統的配置方式係將電力導入部貫穿一腔體以進入腔體的真空環境內。電力導入部的外表面包覆一絕緣件,再以電性為地極的的金屬件予以包覆。此設計的缺點在於絕緣件斷面內部易因過大的集中電磁場產生微電弧,進而導致絕緣件毀損而失效。因此,如何設計出一種絕緣品質佳,且可同時執行多層基板鍍膜的電漿系統,即為相關產業的重點發展目標。The conventional vacuum plasma system has a plurality of different configurations, one of which is to set the power introduction portion in a general atmospheric environment, and selectively provide an insulating member on the surface of the power introducing portion while being away from all the ground potentials. The object prevents the abnormal discharge of the high-potential object and the power introduction portion. This type of configuration limits the relationship between the electrodes of the vacuum plasma system and the substrate and its system composition, resulting in a single electrode that can only form one side of the plasma to create a process limitation for one side of the substrate. In addition, another conventional configuration is to place the power introduction portion through a cavity to enter the vacuum environment of the cavity. The outer surface of the power introduction portion is covered with an insulating member, and then coated with a metal member that is electrically ground. The disadvantage of this design is that the inside of the cross section of the insulating member is liable to generate micro-arc due to excessive concentrated electromagnetic field, which in turn causes damage to the insulating member and fails. Therefore, how to design a plasma system with good insulation quality and simultaneous multi-layer substrate coating is a key development goal of related industries.
本發明係提供一種應用於電漿源,且具較佳安全性的電 力導入設計,以解決上述之問題。The invention provides an electric appliance which is applied to a plasma source and has better safety Force to introduce the design to solve the above problems.
本發明之申請專利範圍係揭露一種電力導入裝置,其包含有一腔體、一套管結構以及一電力導入件。該腔體之內部設置有一電極,且該腔體之內部具有一第一壓力。該套管結構自該腔體之外部延伸設置入該腔體之內部,該套管結構之內部具有一第二壓力。該電力導入件懸空設置於該套管結構之內部,並連接於該腔體內之該電極。該電力導入裝置係利用該第一壓力與該第二壓力之壓力差提供絕緣功能。The patent application scope of the present invention discloses a power introduction device including a cavity, a sleeve structure, and a power introduction member. An electrode is disposed inside the cavity, and a cavity has a first pressure inside. The sleeve structure extends from the outside of the cavity into the interior of the cavity, and the inside of the sleeve structure has a second pressure. The power introducing member is suspended inside the sleeve structure and connected to the electrode in the cavity. The power introduction device provides an insulation function by using a pressure difference between the first pressure and the second pressure.
本發明之申請專利範圍另揭露該第一壓力實質上大於或等於十倍的第二壓力,或者該第二壓力實質上大於或等於十倍的第一壓力,且該腔體與該套管結構之內部的介質為空氣。The patent application scope of the present invention further discloses that the first pressure is substantially greater than or equal to ten times the second pressure, or the second pressure is substantially greater than or equal to ten times the first pressure, and the cavity and the sleeve structure The internal medium is air.
本發明之申請專利範圍另揭露該電力導入裝置另包含有一絕緣橋接件以及一絕緣披覆件。該絕緣橋接件設置於該套管結構與該電極之間,且該絕緣披覆件設置於該電力導入件之表面。The scope of the invention further discloses that the power introducing device further comprises an insulating bridge member and an insulating covering member. The insulating bridge is disposed between the sleeve structure and the electrode, and the insulating cover is disposed on a surface of the power introducing member.
本發明之申請專利範圍另揭露該電力導入裝置應用於一極高頻功率產生器。The scope of the patent application of the present invention further discloses that the power introducing device is applied to a one-pole high-frequency power generator.
本發明之申請專利範圍另揭露一種電漿系統,其包含有至少一載台、一電極以及至少一電力導入裝置。各載台用來承載一相應基板。該電力導入裝置連接於該電極,用來提供電力予該電極以進行該基板之鍍膜。該電力導入裝置包含有一腔體、一套管結構以及一電力導入件。該腔體之內部設置有一電極,且該腔體之內部具有一第一壓力。該套管結構自該腔體之外部延伸設置入該腔體之內部,該套管結構之內部具有一第二壓力。該電力導入件懸空設置於該套管結構之內部,並連接於該腔體內之該電極。該電力導入裝置係利用該第一壓力與該第二壓力之壓力差提供絕緣功能。The patent application scope of the present invention further discloses a plasma system comprising at least one stage, an electrode, and at least one power introducing device. Each stage is used to carry a corresponding substrate. The power introducing device is connected to the electrode for supplying power to the electrode to perform coating of the substrate. The power introduction device includes a cavity, a sleeve structure, and a power introduction member. An electrode is disposed inside the cavity, and a cavity has a first pressure inside. The sleeve structure extends from the outside of the cavity into the interior of the cavity, and the inside of the sleeve structure has a second pressure. The power introducing member is suspended inside the sleeve structure and connected to the electrode in the cavity. The power introduction device provides an insulation function by using a pressure difference between the first pressure and the second pressure.
本發明使用高壓力差作為隔絕電性連接的手段,其具有結構簡單、成本低廉且絕緣效果極佳之優點。值得一提的是,本發明之腔體與套管結構的壓力差值係較佳地等於或大於十倍以上,且不限定其相對大小關係,始可有效地符合高功率電力需求。The invention uses a high pressure difference as a means of isolating electrical connection, which has the advantages of simple structure, low cost and excellent insulation effect. It is worth mentioning that the pressure difference between the cavity and the casing structure of the present invention is preferably equal to or greater than ten times, and the relative size relationship is not limited, so as to effectively meet the high power power demand.
請參閱第1圖,第1圖為本發明實施例之一電漿系統10之示意圖。電漿系統10包含有至少一載台12、一電極14以及至少一電力導入裝置16。載台12用來承載一相應基板18以進行鍍膜等製程。電極14設置於載台12旁。電力導入裝置16連接於電極14,用來供應電力至電極14以啟動製 程。本發明之特性在於,如第1圖所示,電漿系統10可利用一組或一組以上的電力導入裝置16,供給電力給一組或一組以上的電極14,而複數個電力導入裝置16可分別設置在電極14周邊相互對稱或彼此不對稱的位置。Please refer to FIG. 1. FIG. 1 is a schematic view of a plasma system 10 according to an embodiment of the present invention. The plasma system 10 includes at least one stage 12, an electrode 14, and at least one power induction device 16. The stage 12 is used to carry a corresponding substrate 18 for a coating process or the like. The electrode 14 is disposed beside the stage 12. The power introducing device 16 is connected to the electrode 14 for supplying power to the electrode 14 for starting up Cheng. A feature of the present invention is that, as shown in FIG. 1, the plasma system 10 can supply power to one or more sets of electrodes 14 using one or more sets of power induction devices 16, and a plurality of power induction devices 16 may be respectively disposed at positions where the periphery of the electrode 14 is symmetrical or asymmetrical to each other.
以下針對其中一組電力導入裝置16詳細說明。電力導入裝置16包含有一腔體20、一套管結構22、一電力導入件24、一絕緣橋接件26以及一絕緣披覆件28。腔體20可為一密封結構,其內部具有一第一壓力P1。載台12、電極14與基板18皆設置於腔體20之內部。套管結構22自腔體20之外部穿刺入內,而延伸設置入腔體20之內部,其中套管結構22之電性可為地極,電力導入件24可為火極,且套管結構22之內部係具有一第二壓力P2。電力導入件24懸空設置於套管結構22之內部,並連接至腔體20內部的電極14。因此電漿系統10便可藉由電力導入件24將電力傳遞到腔體20內部的電極14,以進行基板18的製程。再者,絕緣橋接件26可選擇性設置於套管結構22與電極14之間,藉此間隔絕緣兩者間的電性連接。The following is a detailed description of one of the power induction devices 16 . The power introducing device 16 includes a cavity 20, a sleeve structure 22, a power introducing member 24, an insulating bridge member 26, and an insulating covering member 28. The cavity 20 can be a sealed structure having a first pressure P1 inside. The stage 12, the electrodes 14 and the substrate 18 are all disposed inside the cavity 20. The sleeve structure 22 is pierced from the outside of the cavity 20 and extends into the interior of the cavity 20, wherein the electrical property of the sleeve structure 22 can be a ground pole, the power introduction member 24 can be a fire pole, and the sleeve structure The interior of 22 has a second pressure P2. The power introduction member 24 is suspended from the inside of the sleeve structure 22 and is connected to the electrode 14 inside the cavity 20. Therefore, the plasma system 10 can transfer power to the electrodes 14 inside the cavity 20 by the power introduction member 24 to perform the process of the substrate 18. Furthermore, the insulating bridge member 26 can be selectively disposed between the sleeve structure 22 and the electrode 14, thereby electrically insulating the gap between the two.
電力導入件24一般不需於其表面裝設絕緣物質。電力導入件24係懸設套管結構22之內部,未與套管結構22的內壁面有實質上接觸而絕緣。此外,本發明之電力導入裝置16另提高腔體20內壓(第一壓力P1)與套管結構22內壓(第 二壓力P2)的差值來強化其絕緣效果。舉例來說,由於本發明之電力導入裝置16適於應用在一極高頻功率產生器(VHF Power Generator),例如40k瓦、60k瓦、甚或100k瓦,為了避免過大的電磁場集中所產生之電弧破壞絕緣,第一壓力P1與第二壓力P2需相差十倍以上,始可獲得較佳的絕緣效果。因此,第一壓力P1可選擇實質上大於或等於十倍的第二壓力P2,或是第二壓力P2可選擇實質上大於或等於十倍的第一壓力P1。The power introducing member 24 generally does not need to be provided with an insulating material on its surface. The power introduction member 24 is suspended inside the sleeve structure 22 and is not insulated from the inner wall surface of the sleeve structure 22 to be insulated. In addition, the power introducing device 16 of the present invention further increases the internal pressure of the cavity 20 (the first pressure P1) and the internal pressure of the casing structure 22 (the The difference between the two pressures P2) strengthens the insulation effect. For example, since the power introducing device 16 of the present invention is suitable for application to a VHF Power Generator, for example, 40 kW, 60 kW, or even 100 kW, in order to avoid an arc generated by excessive electromagnetic field concentration. Destroying the insulation, the first pressure P1 and the second pressure P2 need to differ by more than ten times, and a better insulation effect can be obtained. Therefore, the first pressure P1 may select a second pressure P2 that is substantially greater than or equal to ten times, or the second pressure P2 may select a first pressure P1 that is substantially greater than or equal to ten times.
請參閱第2圖,第2圖為本發明實施例之電力導入裝置16的部分示意圖。如第2圖所示,腔體20與套管結構22之內部的介質可為空氣。套管結構22內之第二壓力P2可選擇性相等或不等於外在環境壓力,而第一壓力P1與第二壓力P2之壓力差係可由強制調控方式或自然形成方式形成,其操作態樣可不限於前所述,端視實際需求而定。舉例來說,電漿系統10可置入一台壓縮機,用來移除套管結構22內的氣體,以達到強制降壓目的;電漿系統10或可置入一台質量控制器,用來通入氣體,以作為強制補氣及增壓。而套管結構22內還可設置一壓力計,用來確認套管結構22內部壓力值,以視需求調控第一壓力P1與第二壓力P2的壓力差。電力導入件24的表面可選擇性部分設置有絕緣披覆件28,以使電力導入件24貫穿套管結構22並與腔體20內部之電極14連接時,可穩定其與套管結構22之內壁面的相對 關係而避免相接觸。Please refer to FIG. 2, which is a partial schematic view of the power introducing device 16 according to an embodiment of the present invention. As shown in FIG. 2, the medium inside the cavity 20 and the sleeve structure 22 may be air. The second pressure P2 in the casing structure 22 may be equal or not equal to the external environmental pressure, and the pressure difference between the first pressure P1 and the second pressure P2 may be formed by a forced regulation or a natural formation manner, and the operation aspect thereof. It may not be limited to the foregoing, depending on actual needs. For example, the plasma system 10 can be equipped with a compressor for removing gas from the casing structure 22 for forced pressure reduction; the plasma system 10 can be placed with a mass controller for use. The gas is introduced to force the qi and pressurization. A pressure gauge can also be disposed in the casing structure 22 for confirming the internal pressure value of the casing structure 22 to adjust the pressure difference between the first pressure P1 and the second pressure P2 as needed. The surface of the power introducing member 24 is selectively provided with an insulating covering member 28 for stabilizing the power introducing member 24 and the sleeve structure 22 when the power introducing member 24 is inserted through the sleeve structure 22 and connected to the electrode 14 inside the cavity 20. Inner wall surface Relationships and avoid contact.
綜上所述,本發明之電漿系統10可彈性設置大尺寸電極14周圍的電力導入裝置16的數量及位置,以達到最佳之電漿均勻度,並擴增可利用之製程參數範圍。本發明之電漿系統10還可利用電極14的兩側均進行基板18的鍍膜,如此可倍增機台產能,以期降低製造成本來提高產品競爭力。此外,本發明之電力導入裝置16係利用十倍以上的壓力差來有效隔絕套管結構22與電力導入件24,故其可在符合高功率電力需求下達成安全穩定的電力傳輸。In summary, the plasma system 10 of the present invention can elastically set the number and position of the power introducing means 16 around the large-sized electrode 14 to achieve optimum plasma uniformity and amplify the range of process parameters that can be utilized. The plasma system 10 of the present invention can also utilize the coating of the substrate 18 on both sides of the electrode 14, so that the capacity of the machine can be multiplied, so as to reduce the manufacturing cost and improve the competitiveness of the product. Further, the power introducing device 16 of the present invention utilizes a pressure difference of ten times or more to effectively isolate the bushing structure 22 from the power introducing member 24, so that it can achieve safe and stable power transmission in compliance with high power power demand.
相較於先前技術,本發明使用高壓力差作為隔絕電性連接的手段,其具有結構簡單、成本低廉且絕緣效果極佳之優點。值得一提的是,本發明之腔體與套管結構的壓力差值係較佳地等於或大於十倍以上,且不限定其相對大小關係,始可有效地符合高功率電力需求。Compared with the prior art, the present invention uses a high pressure difference as a means of isolating electrical connection, which has the advantages of simple structure, low cost and excellent insulation effect. It is worth mentioning that the pressure difference between the cavity and the casing structure of the present invention is preferably equal to or greater than ten times, and the relative size relationship is not limited, so as to effectively meet the high power power demand.
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
10‧‧‧電漿系統10‧‧‧ Plasma System
12‧‧‧載台12‧‧‧ stage
14‧‧‧電極14‧‧‧Electrode
16‧‧‧電力導入裝置16‧‧‧Power induction device
18‧‧‧基板18‧‧‧Substrate
20‧‧‧腔體20‧‧‧ cavity
22‧‧‧套管結構22‧‧‧ casing structure
24‧‧‧電力導入件24‧‧‧Power Imports
26‧‧‧絕緣橋接件26‧‧‧Insulated bridges
28‧‧‧絕緣披覆件28‧‧‧Insulating coverings
P1‧‧‧第一壓力P1‧‧‧ first pressure
P2‧‧‧第二壓力P2‧‧‧ second pressure
第1圖為本發明實施例之電漿系統之示意圖。Figure 1 is a schematic illustration of a plasma system in accordance with an embodiment of the present invention.
第2圖為本發明實施例之電力導入裝置的部分示意圖。Fig. 2 is a partial schematic view showing a power introducing device according to an embodiment of the present invention.
10‧‧‧電漿系統10‧‧‧ Plasma System
12‧‧‧載台12‧‧‧ stage
14‧‧‧電極14‧‧‧Electrode
16‧‧‧電力導入裝置16‧‧‧Power induction device
18‧‧‧基板18‧‧‧Substrate
20‧‧‧腔體20‧‧‧ cavity
22‧‧‧套管結構22‧‧‧ casing structure
24‧‧‧電力導入件24‧‧‧Power Imports
26‧‧‧絕緣橋接件26‧‧‧Insulated bridges
28‧‧‧絕緣披覆件28‧‧‧Insulating coverings
P1‧‧‧第一壓力P1‧‧‧ first pressure
P2‧‧‧第二壓力P2‧‧‧ second pressure
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6242360B1 (en) * | 1999-06-29 | 2001-06-05 | Lam Research Corporation | Plasma processing system apparatus, and method for delivering RF power to a plasma processing |
CN102356447A (en) * | 2009-05-18 | 2012-02-15 | 日本Ae帕瓦株式会社 | Gas-insulated vacuum breaker |
TW201234935A (en) * | 2010-11-04 | 2012-08-16 | Tokyo Electron Ltd | Plasma processing apparatus |
TW201301335A (en) * | 2011-05-17 | 2013-01-01 | Intevac Inc | Large area ICP source for plasma application |
TW201301387A (en) * | 2011-03-31 | 2013-01-01 | Canon Anelva Corp | Substrate processing apparatus |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6242360B1 (en) * | 1999-06-29 | 2001-06-05 | Lam Research Corporation | Plasma processing system apparatus, and method for delivering RF power to a plasma processing |
CN102356447A (en) * | 2009-05-18 | 2012-02-15 | 日本Ae帕瓦株式会社 | Gas-insulated vacuum breaker |
TW201234935A (en) * | 2010-11-04 | 2012-08-16 | Tokyo Electron Ltd | Plasma processing apparatus |
TW201301387A (en) * | 2011-03-31 | 2013-01-01 | Canon Anelva Corp | Substrate processing apparatus |
TW201301335A (en) * | 2011-05-17 | 2013-01-01 | Intevac Inc | Large area ICP source for plasma application |
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