TWI480428B - A mold for partial sureface treatment of secondary optics lens on light-emitting diodes or condenser or refraction lens on solar cell - Google Patents

A mold for partial sureface treatment of secondary optics lens on light-emitting diodes or condenser or refraction lens on solar cell Download PDF

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TWI480428B
TWI480428B TW103115741A TW103115741A TWI480428B TW I480428 B TWI480428 B TW I480428B TW 103115741 A TW103115741 A TW 103115741A TW 103115741 A TW103115741 A TW 103115741A TW I480428 B TWI480428 B TW I480428B
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mold
conductive
aluminum
upper cover
lower seat
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TW103115741A
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TW201500594A (en
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Chien Chon Chen
Chih Yuan Chen
Jin Shyong Lin
Chien Wan Hun
Hsi Wen Yang
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Univ Nat United
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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一種適用於發光二極體之二次光學鏡或太陽能電池的折射或聚光鏡之局部表面處理用模具 Mould for partial surface treatment of refraction or condensing mirror for secondary optics or solar cells of light-emitting diode

本發明是關於一種適用於發光二極體之二次光學鏡或太陽能電池的折射或聚光鏡之局部表面處理用模具,此模具可使待處理樣品之特定表面裸露,並針對使特定裸露之樣品表面進行電解、電解拋光、電鍍、陽極處理、蝕刻、浸鍍、酸洗、鹼洗、蒸鍍等反應。 The invention relates to a partial surface treatment mold suitable for a secondary optical mirror or a solar cell refractive or concentrating mirror for a light-emitting diode, which can expose a specific surface of a sample to be treated and is suitable for a specific exposed sample surface. Perform electrolysis, electropolishing, electroplating, anodizing, etching, immersion plating, pickling, caustic washing, vapor deposition, and the like.

近年來全球表面處理之發展方興未艾,不少表面處理成功開發應用著實改善了人們的生活品質,也開創了無限商機,例如電子產品表面、通訊器材表面、與筆記型電腦之表面,對於表面處理要求品質越來越嚴苛。精密表面處理目前正廣泛地被應用於光學和電子產品中,尤其是奈米結構薄膜具有低成本製程且適合量產的優點,更是受到產業界的青睞,在量產製程的選擇中,由於電化學製程可準確地控制工件表面的電流密度達奈安培(nA.cm-2)以下,因此利用電化學方法提升產品的表面特性或製造奈米結構薄膜常常是傳統產業,如蝕洗、電解、電鍍、或陽極處理等技術公司跨入奈米製程的第一步。利用電化學方法製造奈米材料時為了獲得高品質 的產品,在製造過程中需準確地控制製程條件,如工件之電解液溫度與反應面積等條件,因此需利用模具的設計明確地定義出樣品的反應面積,並且利用反應槽的設計準確地控制反應液的溫度。 In recent years, the development of global surface treatment is in the ascendant. Many surface treatments have successfully developed and applied to improve people's quality of life, and also created unlimited business opportunities, such as electronic product surface, communication equipment surface, and notebook computer surface, for surface treatment requirements. The quality is getting more and more stringent. Precision surface treatment is currently widely used in optical and electronic products, especially nanostructured films have the advantages of low cost process and mass production, and are favored by the industry. In the selection of mass production processes, The electrochemical process can accurately control the current density of the surface of the workpiece up to nA.cm -2 , so the use of electrochemical methods to improve the surface properties of the product or to fabricate nanostructured films is often a traditional industry, such as etch and electrolysis. Technology companies such as electroplating, or anodizing have entered the first step of the nanotechnology process. In order to obtain high-quality products by electrochemical methods, in order to obtain high-quality products, it is necessary to accurately control the process conditions during the manufacturing process, such as the electrolyte temperature and reaction area of the workpiece. Therefore, the sample must be clearly defined by the design of the mold. The reaction area and the design of the reaction tank accurately control the temperature of the reaction liquid.

基本的化學處理包括電鍍、電解、陽極處理、電池、與雙層電容器等,電化學反應系統應包含陽極、陰極、與電解液等三部分,電化學系統中,電子在兩電極間的外部金屬導線中移動,而離子則是由電解液傳遞,這種電子與離子的同步移動,構成了基本的電化學迴路,樣品的反應面積為化學反應或電化學反應中評估反應速率的基本參數,因此,需靠模具明確地定義出樣品反應面積,習知之耐酸鹼膠帶可以方便地定義樣品的反應面積,然而對於施工與膠帶成本卻又是另一沉重的負擔,同時易產生膠帶邊緣滲漏與反應速率較快的缺點,為了解決對於表面處理品質嚴苛要求的問題,本發明專利提出一種具有緊密接觸於樣品表面且可以準確定義處理區表面積的一種化學處理用模具,可針對樣品表面施以高品質的表面處理。 The basic chemical treatment includes electroplating, electrolysis, anodizing, batteries, and double-layer capacitors. The electrochemical reaction system should include three parts: anode, cathode, and electrolyte. In the electrochemical system, the external metal between the two electrodes in the electrochemical system. The wire moves, and the ions are transferred by the electrolyte. The electrons move synchronously with the ions to form a basic electrochemical circuit. The reaction area of the sample is the basic parameter for evaluating the reaction rate in a chemical reaction or an electrochemical reaction. The sample reaction area needs to be clearly defined by the mold. The conventional acid-base tape can easily define the reaction area of the sample, but it is another heavy burden for the construction and tape cost, and is easy to produce tape edge leakage and The disadvantage of faster reaction rate, in order to solve the problem of strict requirements on surface treatment quality, the present invention proposes a chemical processing mold which has close contact with the surface of the sample and can accurately define the surface area of the treatment area, and can be applied to the surface of the sample. High quality surface treatment.

電化學反應中的陽極處理由來被定義為成熟的傳統產業,其主要的應用如表面抗腐蝕、塗裝、裝飾、電絕緣、表面電鍍、耐磨性等表面改質應用,由於陽極氧化膜的多孔性結構,其後續需再經封孔處理步驟,應用時方能具有美觀與多色彩化的緻密膜。近年來由於奈米技術的發展,也使得在陽極氧化膜管胞或奈米管結構的管徑、管長、與管密度在技術上更能完整的掌控。簡便的陽極處理技術,提供成本低廉且快速量產的製程,可實際應用於要求單位 表面積大的產品發展,如染料敏化太陽能電池、導熱片、與隔熱片元件之開發。陽極處理技術,隨著工業產品的需求,從早期針對重工業結構物表面的抗腐蝕、抗磨耗、抗撞擊、與耐高溫等表面改質的需求,近年來更應用於蒸鍍設備之真空腔體內部的鍍膜吸收層,或積體電路內之阻障層,隨著目前最熱門的散熱材、隔熱材、綠建材、與太陽能電池等產業發展,具自動化生產特性的陽極處理技術,勢必將成為各產業的製程之一。 The anodizing treatment in electrochemical reactions is defined as a mature traditional industry, and its main applications are surface modification, such as surface corrosion resistance, coating, decoration, electrical insulation, surface plating, wear resistance, etc., due to the anodized film. The porous structure, which is subsequently subjected to a sealing treatment step, can be applied to a dense film with an aesthetic appearance and a multi-color. In recent years, due to the development of nanotechnology, the tube diameter, tube length, and tube density of the anodized film tube or nanotube structure are technically more complete. Simple anode treatment technology, which provides a low cost and fast mass production process, which can be applied to the required unit. The development of products with large surface areas, such as the development of dye-sensitized solar cells, thermal conductive sheets, and thermal insulation sheet components. Anode treatment technology, with the demand for industrial products, has been applied to the vacuum chamber of vapor deposition equipment in recent years from the early requirements for surface modification of corrosion resistance, abrasion resistance, impact resistance, and high temperature resistance of heavy industrial structures. The coating absorption layer of the part, or the barrier layer in the integrated circuit, with the development of the most popular heat dissipation materials, heat insulation materials, green building materials, and solar cells, the anodizing technology with automatic production characteristics is bound to be Become one of the processes of various industries.

陽極處理在產業上的應用其中以鋁和鈦的操作技術最成熟,當鋁置於特定的電解液中且控制適當的陽極處理參數,所形成的氧化膜具有規則狀的胞狀(cell)或奈米管結構,奈米管末端與鋁材的介面則形成半球形的阻障層,其中奈米管與阻障層的成份均為三氧化二鋁(Al2O3),鋁於陽極處理主要藉由2Al+3+3H2O→Al2O3+6H+反應而成,因此,需控制pH值低於4以下,即酸性溶液之條件下,且外加電壓需高於-1.8V(SHE)以上,式中H+將藉由H++H+→H2,而生成氫氣,此氫氣由Al2O3內部逸出,進而造成多孔性之氧化鋁形成,因此,控制氫氣逸出之速率,則可控制形成於氧化鋁內部的孔洞,使之成為孔徑均一性之陽極氧化鋁膜。鋁於陽極處理時於表面生成三氧化二鋁(Al2O3)氧化層,該氧化層成長之初以六角形孔洞往上方成長,隨著時間的增加該六角形孔洞周圍原子的排列漸成非規則性(disorder)的排列,所以孔洞漸轉為圓形孔洞,另外孔徑的改變可由C=mV表示之,其中C:孔徑大小(nm)、V:陽極處理電壓(V)、m:常數(2~2.5)。 The application of anodizing in industrial applications, in which the operating technology of aluminum and titanium is the most mature, when the aluminum is placed in a specific electrolyte and the appropriate anode treatment parameters are controlled, the formed oxide film has a regular cell or The structure of the nanotube, the interface between the end of the nanotube and the aluminum material forms a hemispherical barrier layer, wherein the composition of the nanotube and the barrier layer is aluminum oxide (Al 2 O 3 ), and the aluminum is treated at the anode. Mainly by 2Al +3 +3H 2 O→Al 2 O 3 +6H + reaction, therefore, it is necessary to control the pH below 4, that is, under the condition of acidic solution, and the applied voltage needs to be higher than -1.8V ( SHE) above, in which H + will generate hydrogen by H + +H + →H 2 , which will escape from the inside of Al 2 O 3 , thereby causing the formation of porous alumina, thus controlling hydrogen evolution At the rate, the pores formed inside the alumina can be controlled to become an anodized aluminum film having a uniform pore size. When the aluminum is anodized, an aluminum oxide (Al 2 O 3 ) oxide layer is formed on the surface, and the oxide layer grows upwards in a hexagonal hole at the beginning of growth, and the arrangement of atoms around the hexagonal hole gradually increases with time. The arrangement of the disorder, so the hole gradually turns into a circular hole, and the change in the aperture can be expressed by C=mV, where C: aperture size (nm), V: anode processing voltage (V), m: constant (2~2.5).

利用陽極處理所產生的二氧化鈦(TiO2)具高效能之光催化性、化學穩定性高、價格便宜等特性,已被廣泛地應用於工業與學術研究。低維度TiO2結構,如奈米管,奈米線,和奈米帶等二氧化鈦奈米材料,在光學、電子、觸媒、感測器等應用極具潛力,相對於塊材(bulk)二氧化鈦有著極大的表面積,其可吸收大量的光電子,將之轉換成能量,奈米線可偵測及微量之元素,大大地提高偵測器之靈敏度,高反應面積之觸媒,可提高反應效率等等。陽極處理法可快速地得到具奈米管狀之高品質陽極氧化鈦膜,其管徑,將隨著外加電壓之不同,可製得介於30至100nm直徑之奈米管,而其管長將由電解液種類控制,得到0.1至1000μm之管長,其氧化膜之奈米孔密度將介於108~1010pore/cm2。具光催化特性之銳鈦相(anatase)陽極二氧化鈦奈米模板(template)製作方式,可經由陽極處理、與熱處理等步驟製得表面形成具規則性之非晶相(amorphous)二氧化鈦薄膜,再經熱處理後,可得銳鈦相(anatas)之陽極二氧化鈦膜模板。 Titanium dioxide (TiO 2 ) produced by anodizing has been widely used in industrial and academic research because of its high-performance photocatalytic properties, high chemical stability, and low cost. Low-dimensional TiO 2 structures, such as nanotubes, nanowires, and nano-titanium nanomaterials, have great potential in applications such as optics, electronics, catalysts, and sensors, as opposed to bulk titanium dioxide. It has a large surface area, which can absorb a large amount of photoelectrons and convert it into energy. The nanowire can detect and trace trace elements, greatly improving the sensitivity of the detector, and the catalyst with high reaction area can improve the reaction efficiency. Wait. The anodizing method can quickly obtain a high-quality anodic titanium oxide film with a nanometer tube shape, and the diameter of the tube can be made up to a diameter of 30 to 100 nm with the applied voltage, and the tube length will be electrolyzed. The liquid type is controlled to obtain a tube length of 0.1 to 1000 μm, and the nanopore density of the oxide film is between 10 8 and 10 10 pore/cm 2 . An anatase anode titanium dioxide nano template having photocatalytic properties can be formed by forming an amorphous amorphous titanium oxide film on the surface through anodizing, heat treatment and the like. After the heat treatment, an anatase titanium dioxide film template of an anatase phase can be obtained.

常見二氧化鈦(TiO2)之結晶相,有銳鈦礦(anatas)相、板鈦礦(Brookite)相與金紅石相(rutile),可利用熱處理方式控制其相穩定,銳鈦礦相屬於低溫(280~450℃)穩定相,而金紅石相則屬於高溫(580~1600℃)穩定相。結晶化之二氧化鈦具有許多優良的電性與光學特性,其中金紅石相者可被用於電容器之介電材料或高溫氧分壓偵測器,而銳鈦礦相者可被用於光觸媒、太陽能電池、斥水性等材料之應用。當銳鈦礦相之二氧化鈦受到紫外光或太陽光的照射時,二氧化鈦表面的電子吸收足夠能量而脫離,可於該表面產生電子-電洞 對(electron-hole pair;e-h+)反應,電洞會將附近水分子游離出的氫氧基(OH-)氧化(即奪取其電子,使其成為活性極大的氫氧自由基(OH radical);氫氧自由基一旦遇上有機物質,便會將電子奪回,有機物分子因鍵結的潰散而分崩離析。一般的污染物或病源體多半是碳水化合物,分解後大部份會變成無害的水及二氧化碳,因此可以達到除污及滅菌的目標,當紫外光波長照射在銳鈦礦相之二氧化鈦時,在價電子帶(valence band,VB)的電子(e-)被紫外線之能量(3.2eV)所激發跳升到傳導帶(conduction band,CB),此時在價電子帶便會產生帶正電之正孔(hole),而形成一組電子-電洞對。二氧化鈦則利用所產生的電洞之氧化力及電子的還原力和表面接觸的H2O,O2發生作用,產生氧化力極強之自由基。光激發銳鈦礦相之二氧化鈦使之產生電子躍遷,所需光波長可利用此式評估:E=h ν=hc/λ;其中Eg:energy gap(eV),h:planck constant=6.626×10-34(J.s),ν:Frequency(Hz),c=2.298×108(m/s),λ:wave length,λ=1240/Eg(nm),TiO2(anatas)之Eg為3.2eV,因此λ為387.5nm,即入射光波長小於387.5nm之紫外光,均可激發銳鈦礦相之二氧化鈦使之產生光催化效應。 The crystal phase of titanium dioxide (TiO 2 ) is common, and there are anatase phase, brookite phase and rutile phase. The phase stability can be controlled by heat treatment, and the anatase phase belongs to low temperature ( 280~450°C) stable phase, while rutile phase is high temperature (580~1600°C) stable phase. The crystallized titanium dioxide has many excellent electrical and optical properties, among which the rutile phase can be used for a dielectric material of a capacitor or a high temperature oxygen partial pressure detector, and an anatase phase can be used for a photocatalyst, solar energy. Application of materials such as batteries and water repellency. When the titanium dioxide of the anatase phase is irradiated by ultraviolet light or sunlight, the electrons on the surface of the titanium dioxide absorb enough energy to escape, and an electron-hole pair (e - h + ) reaction can be generated on the surface. The hole oxidizes the hydroxyl group (OH - ) liberated from nearby water molecules (that is, it takes its electrons to become an extremely active OH radical; once the hydroxyl radical encounters an organic substance, it will The electrons will be recaptured, and the organic molecules will fall apart due to the collapse of the bond. The general pollutants or pathogens are mostly carbohydrates, and most of them will become harmless water and carbon dioxide after decomposition, so the target of decontamination and sterilization can be achieved. When the ultraviolet light wavelength is irradiated on the anatase phase of titanium dioxide, the electrons (e - ) in the valence band (VB) are excited by the ultraviolet energy (3.2 eV) to jump to the conduction band (CB). At this time, a positively charged hole is formed in the valence band, and a set of electron-hole pairs is formed. The titanium oxide utilizes the oxidizing power of the generated hole and the reducing power and surface contact of the electron. H 2 O, O 2 acts to generate a radical with strong oxidizing power. Photoexcitation of the anatase phase of titanium dioxide causes an electronic transition, and the wavelength of light required can be evaluated by this formula: E = h ν = hc / λ; where E g : Energy gap(eV),h:planck constant=6.626×10 -34 (J.s), ν:Frequency(Hz),c=2.298×10 8 (m/s), λ:wave length,λ=1240/ E g (nm), TiO 2 (anatas) E g is 3.2eV, so λ is 387.5nm, that is, ultraviolet light with incident light wavelength less than 387.5nm, can excite titanium dioxide of anatase phase to produce photocatalytic effect .

本發明之目的在於提供一種適用於發光二極體之二次光學鏡或太陽能電池的折射或聚光鏡之局部表面處理用模具,藉由模具的輔助使樣品的特定區域可進行電解、電解拋光、電鍍、陽極處理、蝕刻等化學反應。本發明專利考量了模具的操作方便性、使用壽命延 長、與商業價值,因此利用低材料成本的聚合物、金屬、金屬表面經絕緣處理等絕緣材料聚合物、工程塑膠、聚合物、或壓克力製造一種化學處理用的模具並應用濕式化學處理環境中,此化學處理用的模具結構具有生產簡單性與面積變化性大等特性,適用於工業量產上。此一種化學處理用模具之分解圖10結構如第1圖所示,包含:導電線101;矽膠套管102;導電線防水蓋13;導電線防水座104;導電線防水座O型環105;導電棒106;模具下座107;模具下座O型環108;導電片109;上蓋防水墊片110;工作樣品111;模具上蓋112;工作樣品之開口反應面積113。 It is an object of the present invention to provide a partial surface treatment mold suitable for a secondary optical mirror or a solar cell refracting or concentrating mirror of a light-emitting diode, which can be electrolyzed, electrolytically polished, and plated by a mold assisting a specific region of the sample. Chemical reactions such as anodizing and etching. The invention patent considers the operation convenience and service life of the mold Long, and commercial value, therefore, the use of low-material cost polymer, metal, metal surface insulation materials such as insulating materials, engineering plastics, polymers, or acrylic to make a chemical processing mold and apply wet chemistry In the processing environment, the mold structure for the chemical treatment has characteristics such as simple production and large area variability, and is suitable for industrial mass production. The structure of the chemical processing mold is as shown in Fig. 1, comprising: a conductive wire 101; a silicone sleeve 102; a conductive wire waterproof cover 13; a conductive wire waterproof seat 104; a conductive wire waterproof seat O-ring 105; Conductive bar 106; mold lower seat 107; mold lower seat O-ring 108; conductive sheet 109; upper cover waterproof gasket 110; working sample 111; mold upper cover 112; open reaction area 113 of working sample.

第2圖更說明了模具的立體組合結構圖20,其結構包括連接於工作樣品與導電棒之間的導電線201;用於防止滲水之矽膠套管202、導電線防水蓋203、導電線防水座204、與導電線防水座O型環205;用於固定導電片與工作試片之模具下座206;用於防止滲水之模具下座O型環207;用於定義工作樣品之開口反應面積的上蓋208。第3圖說明了模具下座-導電線-導電棒組合結構圖,包含模具下座301;用於防止下座301與上蓋之間滲水的模具下座O型環302;用於防止導電線306與下座301之間滲水的導電線防水座303、導電線防水蓋304、與矽膠套管305;用來連接於導電棒307與電源供應器之間的導電線306。第4圖說明了導電片結構圖,導電片為一體成形或結合性之導體,其第一表面401的直徑較大可置於模具之上蓋內,其第二表面402的直徑較小可置於模具之下座內,第二表面上更設置有導電棒固定孔403用來增加導電棒在導電片上之接觸穩定性。 Figure 2 further illustrates a three-dimensional assembly structure of the mold 20, the structure comprising a conductive line 201 connected between the working sample and the conductive rod; the rubber sleeve 202 for preventing water seepage, the conductive waterproof cover 203, the conductive line waterproof a seat 204, a conductive waterproof seat O-ring 205; a mold lower seat 206 for fixing the conductive sheet and the working test piece; a mold lower seat O-ring 207 for preventing water seepage; for defining an open reaction area of the working sample The upper cover 208. 3 is a view showing a mold lower seat-conductive wire-conductive bar assembly structure, including a mold lower seat 301; a mold lower seat O-ring 302 for preventing water from seeping between the lower seat 301 and the upper cover; and a conductive wire 306 for preventing the conductive wire 306. A conductive waterproofing base 303, a conductive waterproof cover 304, and a silicone sleeve 305, which are in contact with the lower seat 301, are connected to the conductive wire 306 between the conductive rod 307 and the power supply. Figure 4 is a view showing the structure of the conductive sheet. The conductive sheet is an integrally formed or bonded conductor. The first surface 401 has a larger diameter and can be placed in the upper cover of the mold. The second surface 402 has a smaller diameter and can be placed. In the lower seat of the mold, the second surface is further provided with a conductive rod fixing hole 403 for increasing the contact stability of the conductive rod on the conductive sheet.

第5圖說明了模具上蓋結構圖,其結構包括模具上蓋外徑501;模具上蓋內徑502提供導電片第一表面固定用;模具上蓋與下座之接觸面503提供防水矽膠片置放處;上蓋母牙504用於結合模具下座公牙;模具上蓋防水矽膠片座505用於防止液體由工作樣品之開口反應面積506滲入模具上蓋母牙504內。第6圖說明了模具下座結構圖,其結構包括下座公牙601用於結合模具上蓋母牙;下座扭力輔助孔602用於輔助施加一扭力使下座公牙與上蓋母牙的結合緊密度;導電線防水座O型環槽603用於防止液體由導電線滲入模具下座內601之導電片;下座母牙604用於結合導電線防水座公牙。 Figure 5 illustrates the structure of the upper cover of the mold, the structure of which includes the outer diameter 501 of the upper cover of the mold; the inner diameter 502 of the upper cover of the mold provides the first surface for fixing the conductive sheet; the contact surface 503 of the upper cover and the lower seat of the mold provides the waterproof film placement; The upper cover female teeth 504 are used to bond the mold lower seat male teeth; the upper mold cover waterproof film holder 505 is used to prevent liquid from penetrating into the mold upper cover female teeth 504 from the open reaction area 506 of the working sample. Figure 6 is a view showing the structure of the lower seat of the mold, the structure including the lower seat male tooth 601 for joining the upper cover tooth of the mold; the lower seat torque assisting hole 602 for assisting the application of a torsion force to combine the lower seat male tooth with the upper cover male tooth The tightness; the conductive wire waterproof seat O-ring groove 603 is used to prevent liquid from penetrating into the conductive piece of the mold lower seat 601 by the conductive wire; the lower seat female tooth 604 is used for bonding the conductive wire waterproof seat male tooth.

以下,茲使用第1圖~第15圖來詳細說明本發明相關之一種化學處理用的模具之各實施例。此外,在圖面的說明中,同一要素或具有同一機能的要素係使用同一符號,並省略重複的說明。 Hereinafter, each embodiment of a mold for chemical treatment according to the present invention will be described in detail using Figs. 1 to 15 . In the description of the drawings, the same elements or elements having the same function are denoted by the same reference numerals, and the description thereof will not be repeated.

【實施例1】 [Example 1]

以第1圖之模具實體進行6吋矽晶圓表面鋁膜之陽極處理處理。此範例矽晶圓表面蒸鍍有一層厚度為1μm之鋁膜,經陽極處理後可使鋁膜反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁膜表面之待處理面積,使鋁膜表面與經陽極處理後產生多孔性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,陽極處理的電解液的成份為1~10vol.%的硫酸或 磷酸,或1~8wt.%的草酸,陽極處理條件為10~200伏特(V)、-5~30℃、1分鐘~24小時,第7圖顯示利用3wt.%(重量百分比)草酸水溶液為電解液、外加40伏特直流電壓、陽極處理時間5分鐘、電解液溫度為25℃、可使金屬鋁薄膜完全反應成透明的三氧化二鋁薄膜,因此矽晶圓表面呈現棕黑色之矽晶圓原色。 The anode treatment of the aluminum film on the surface of the 6-inch wafer was carried out by the mold body of Fig. 1. In this example, an aluminum film having a thickness of 1 μm is vapor-deposited on the surface of the wafer, and the aluminum film is reacted to form a porous aluminum oxide film by anodization. The opening area of the mold is used to define the area to be treated on the surface of the aluminum film, and the surface of the aluminum film is treated with a porous aluminum oxide film after the anode treatment, and the applied voltage and electrolyte composition are used to control the distribution of the pore density and the pores. The size of the anodized electrolyte is 1~10 vol.% sulfuric acid or Phosphoric acid, or 1~8wt.% of oxalic acid, anodizing conditions of 10~200 volts (V), -5~30 °C, 1 minute~24 hours, Figure 7 shows the use of 3wt.% (by weight) aqueous oxalic acid solution The electrolyte, plus 40 volts DC voltage, anode treatment time of 5 minutes, electrolyte temperature of 25 ° C, can completely react the aluminum metal film into a transparent aluminum oxide film, so the surface of the silicon wafer is brownish black. primary color.

【實施例2】 [Example 2]

以第1圖之模具實體進行6吋矽晶圓表面鋁膜之陽極處理處理。此範例矽晶圓表面蒸鍍有一層厚度為1μm之鋁膜,經陽極處理後可使鋁膜反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁膜表面之待處理面積,使鋁膜表面與經陽極處理後產生多孔性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,利用5wt.%(重量百分比)草酸水溶液為電解液、外加30伏特直流電壓、電解液溫度為25℃、陽極處理時間5分鐘、可使金屬鋁薄膜完全反應成透明的三氧化二鋁薄膜,因此矽晶圓表面呈現棕黑色之矽晶圓原色。 The anode treatment of the aluminum film on the surface of the 6-inch wafer was carried out by the mold body of Fig. 1. In this example, an aluminum film having a thickness of 1 μm is vapor-deposited on the surface of the wafer, and the aluminum film is reacted to form a porous aluminum oxide film by anodization. The opening area of the mold is used to define the area to be treated on the surface of the aluminum film, and the surface of the aluminum film is treated with a porous aluminum oxide film after the anode treatment, and the applied voltage and electrolyte composition are used to control the distribution of the pore density and the pores. The size, using 5wt.% (% by weight) aqueous solution of oxalic acid as electrolyte, plus 30 volts DC voltage, electrolyte temperature of 25 ° C, anode treatment time of 5 minutes, can completely react the metal aluminum film into a transparent aluminum oxide film Therefore, the surface of the wafer is brownish black and the original color of the wafer.

【實施例3】 [Example 3]

以第1圖之模具實體進行6吋矽晶圓表面鋁膜之陽極處理處理。此範例矽晶圓表面蒸鍍有一層厚度為1μm之鋁膜,經陽極處理後可使鋁膜反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁膜表面之待處理面積,使鋁膜表面與經陽極處理後產生多孔 性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,利用3wt.%(重量百分比)草酸水溶液為電解液、外加60伏特直流電壓、電解液溫度為10℃、陽極處理時間3分鐘、可使金屬鋁薄膜完全反應成透明的三氧化二鋁薄膜,因此矽晶圓表面呈現棕黑色之矽晶圓原色。 The anode treatment of the aluminum film on the surface of the 6-inch wafer was carried out by the mold body of Fig. 1. In this example, an aluminum film having a thickness of 1 μm is vapor-deposited on the surface of the wafer, and the aluminum film is reacted to form a porous aluminum oxide film by anodization. The area of the surface of the aluminum film is limited by the opening range of the mold, so that the surface of the aluminum film is porous after being anodized. Aluminium oxide film, and using the applied voltage and electrolyte composition to control the distribution of pore density and the size of the pores, using 3wt.% (by weight) aqueous solution of oxalic acid as electrolyte, plus 60 volts DC voltage, electrolyte temperature At 10 ° C and an anodic treatment time of 3 minutes, the aluminum metal film can be completely reacted into a transparent aluminum oxide film, so that the surface of the ruthenium wafer has a brownish black enamel wafer primary color.

【實施例4】 [Embodiment 4]

以第1圖之模具實體進行6吋矽晶圓表面鋁膜之陽極處理處理。此範例矽晶圓表面蒸鍍有一層厚度為1μm之鋁膜,經陽極處理後可使鋁膜反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁膜表面之待處理面積,使鋁膜表面與經陽極處理後產生多孔性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,利用10vol.%(體積百分比)硫酸水溶液為電解液、外加20伏特直流電壓、電解液溫度為10℃、陽極處理時間3分鐘、可使金屬鋁薄膜完全反應成透明的三氧化二鋁薄膜,因此矽晶圓表面呈現棕黑色之矽晶圓原色。 The anode treatment of the aluminum film on the surface of the 6-inch wafer was carried out by the mold body of Fig. 1. In this example, an aluminum film having a thickness of 1 μm is vapor-deposited on the surface of the wafer, and the aluminum film is reacted to form a porous aluminum oxide film by anodization. The opening area of the mold is used to define the area to be treated on the surface of the aluminum film, and the surface of the aluminum film is treated with a porous aluminum oxide film after the anode treatment, and the applied voltage and electrolyte composition are used to control the distribution of the pore density and the pores. The size, using 10vol.% (volume percent) sulfuric acid aqueous solution as electrolyte, plus 20 volts DC voltage, electrolyte temperature 10 ° C, anode treatment time 3 minutes, can completely react the metal aluminum film into a transparent aluminum oxide film Therefore, the surface of the wafer is brownish black and the original color of the wafer.

【實施例5】 [Embodiment 5]

以第1圖之模具實體進行6吋矽晶圓表面鋁膜之陽極處理處理。此範例矽晶圓表面蒸鍍有一層厚度為1μm之鋁膜,經陽極處理後可使鋁膜反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁膜表面之待處理面積,使鋁膜表面與經陽極處理後產生多孔 性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,利用10vol.%(體積百分比)硫酸水溶液為電解液、外加10伏特直流電壓、電解液溫度為5℃、陽極處理時間5分鐘、可使金屬鋁薄膜完全反應成透明的三氧化二鋁薄膜,因此矽晶圓表面呈現棕黑色之矽晶圓原色。 The anode treatment of the aluminum film on the surface of the 6-inch wafer was carried out by the mold body of Fig. 1. In this example, an aluminum film having a thickness of 1 μm is vapor-deposited on the surface of the wafer, and the aluminum film is reacted to form a porous aluminum oxide film by anodization. The area of the surface of the aluminum film is limited by the opening range of the mold, so that the surface of the aluminum film is porous after being anodized. Aluminium oxide film, and using the applied voltage and electrolyte composition to control the pore density distribution and pore size, using 10vol.% (volume percent) sulfuric acid aqueous solution as electrolyte, plus 10 volts DC voltage, electrolyte temperature At 5 ° C and an anode treatment time of 5 minutes, the aluminum metal film can be completely reacted into a transparent aluminum oxide film, so that the surface of the germanium wafer is brownish black and the original color of the wafer.

【實施例6】 [Embodiment 6]

以第1圖之模具實體進行6吋矽晶圓表面鋁膜之陽極處理處理。此範例矽晶圓表面蒸鍍有一層厚度為1μm之鋁膜,經陽極處理後可使鋁膜反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁膜表面之待處理面積,使鋁膜表面與經陽極處理後產生多孔性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,利用10vol.%(體積百分比)硫酸水溶液為電解液、外加5伏特直流電壓、電解液溫度為0℃、陽極處理時間10分鐘、可使金屬鋁薄膜完全反應成透明的三氧化二鋁薄膜,因此矽晶圓表面呈現棕黑色之矽晶圓原色。 The anode treatment of the aluminum film on the surface of the 6-inch wafer was carried out by the mold body of Fig. 1. In this example, an aluminum film having a thickness of 1 μm is vapor-deposited on the surface of the wafer, and the aluminum film is reacted to form a porous aluminum oxide film by anodization. The opening area of the mold is used to define the area to be treated on the surface of the aluminum film, and the surface of the aluminum film is treated with a porous aluminum oxide film after the anode treatment, and the applied voltage and electrolyte composition are used to control the distribution of the pore density and the pores. The size, using 10vol.% (volume percent) sulfuric acid aqueous solution as electrolyte, plus 5 volts DC voltage, electrolyte temperature 0 ° C, anode treatment time 10 minutes, can completely react the metal aluminum film into a transparent aluminum oxide film Therefore, the surface of the wafer is brownish black and the original color of the wafer.

【實施例7】 [Embodiment 7]

以第1圖之模具實體進行6吋矽晶圓表面鋁膜之陽極處理處理。此範例矽晶圓表面蒸鍍有一層厚度為1μm之鋁膜,經陽極處理後可使鋁膜反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁膜表面之待處理面積,使鋁膜表面與經陽極處理後產生多孔 性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,利用1vol.%(體積百分比)磷酸水溶液為電解液、外加120伏特直流電壓、電解液溫度為3℃、陽極處理時間3分鐘、可使金屬鋁薄膜完全反應成透明的三氧化二鋁薄膜,因此矽晶圓表面呈現棕黑色之矽晶圓原色。 The anode treatment of the aluminum film on the surface of the 6-inch wafer was carried out by the mold body of Fig. 1. In this example, an aluminum film having a thickness of 1 μm is vapor-deposited on the surface of the wafer, and the aluminum film is reacted to form a porous aluminum oxide film by anodization. The area of the surface of the aluminum film is limited by the opening range of the mold, so that the surface of the aluminum film is porous after being anodized. Aluminium oxide film, and using the applied voltage and electrolyte composition to control the pore density distribution and pore size, using 1vol.% (volume percent) phosphoric acid aqueous solution as electrolyte, plus 120 volts DC voltage, electrolyte temperature At 3 ° C, the anode treatment time is 3 minutes, the metal aluminum film can be completely reacted into a transparent aluminum oxide film, so the surface of the germanium wafer is brownish black and the original color of the wafer.

【實施例8】 [Embodiment 8]

以第1圖之模具實體進行6吋矽晶圓表面鋁膜之陽極處理處理。此範例矽晶圓表面蒸鍍有一層厚度為1μm之鋁膜,經陽極處理後可使鋁膜反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁膜表面之待處理面積,使鋁膜表面與經陽極處理後產生多孔性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,利用1vol.%(體積百分比)磷酸水溶液為電解液、外加180伏特直流電壓、電解液溫度為-1℃、陽極處理時間2分鐘、可使金屬鋁薄膜完全反應成透明的三氧化二鋁薄膜,因此矽晶圓表面呈現棕黑色之矽晶圓原色。 The anode treatment of the aluminum film on the surface of the 6-inch wafer was carried out by the mold body of Fig. 1. In this example, an aluminum film having a thickness of 1 μm is vapor-deposited on the surface of the wafer, and the aluminum film is reacted to form a porous aluminum oxide film by anodization. The opening area of the mold is used to define the area to be treated on the surface of the aluminum film, and the surface of the aluminum film is treated with a porous aluminum oxide film after the anode treatment, and the applied voltage and electrolyte composition are used to control the distribution of the pore density and the pores. Size, using 1vol.% (volume percent) aqueous phosphoric acid solution as electrolyte, plus 180 volts DC voltage, electrolyte temperature -1 ° C, anode treatment time 2 minutes, can completely react aluminum metal film into transparent aluminum oxide The film, so the surface of the wafer is brownish black and the original color of the wafer.

【實施例9】 [Embodiment 9]

以第1圖之模具實體進行6吋矽晶圓表面鋁膜之陽極處理處理。此範例矽晶圓表面蒸鍍有一層厚度為1μm之鋁膜,經陽極處理後可使鋁膜反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁膜表面之待處理面積,使鋁膜表面與經陽極處理後產生多孔 性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,利用1vol.%(體積百分比)磷酸水溶液為電解液、外加205伏特直流電壓、電解液溫度為-5℃、陽極處理時間1分鐘、可使金屬鋁薄膜完全反應成透明的三氧化二鋁薄膜,因此矽晶圓表面呈現棕黑色之矽晶圓原色。 The anode treatment of the aluminum film on the surface of the 6-inch wafer was carried out by the mold body of Fig. 1. In this example, an aluminum film having a thickness of 1 μm is vapor-deposited on the surface of the wafer, and the aluminum film is reacted to form a porous aluminum oxide film by anodization. The area of the surface of the aluminum film is limited by the opening range of the mold, so that the surface of the aluminum film is porous after being anodized. The aluminum oxide film, using the applied voltage and electrolyte composition to control the pore density distribution and pore size, using 1vol.% (volume percent) phosphoric acid aqueous solution as electrolyte, plus 205 volts DC voltage, electrolyte temperature At -5 ° C, the anode treatment time of 1 minute, the metal aluminum film can be completely reacted into a transparent aluminum oxide film, so the surface of the germanium wafer is brownish black and the original color of the wafer.

【實施例10】 [Embodiment 10]

以第1圖之模具實體進行4吋玻璃表面鋁膜之陽極處理處理。此範例玻璃表面蒸鍍有一層厚度為1μm之鋁膜,經陽極處理後可使鋁膜反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁膜表面之待處理面積,使鋁膜表面與經陽極處理後產生多孔性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,陽極處理的電解液主要以硫酸、磷酸、或草酸為主,第8圖顯示利用3wt.%(重量百分比)草酸水溶液為電解液、外加40伏特直流電壓、陽極處理時間5分鐘、電解液溫度為25℃、可使金屬鋁薄膜完全反應成透明的三氧化二鋁薄膜,因此反應區呈現透明玻璃狀。 The anode treatment of the aluminum film on the surface of the 4 吋 glass was carried out by the mold body of Fig. 1. The glass surface of this sample is vapor-deposited with an aluminum film having a thickness of 1 μm, and the aluminum film is reacted to form a porous aluminum oxide film by anodization. The opening area of the mold is used to define the area to be treated on the surface of the aluminum film, and the surface of the aluminum film is treated with a porous aluminum oxide film after the anode treatment, and the applied voltage and electrolyte composition are used to control the distribution of the pore density and the pores. The size, the anodized electrolyte is mainly sulfuric acid, phosphoric acid, or oxalic acid. Figure 8 shows the use of 3wt.% (by weight) aqueous oxalic acid solution as electrolyte, plus 40 volts DC voltage, anode treatment time 5 minutes, electrolyte At a temperature of 25 ° C, the aluminum metal film can be completely reacted into a transparent aluminum oxide film, so that the reaction zone is in the form of a transparent glass.

【實施例11】 [Embodiment 11]

以第1圖之模具實體進行4吋玻璃表面鋁膜之陽極處理處理。此範例玻璃表面蒸鍍有一層厚度為1μm之鋁膜,經陽極處理後可使鋁膜反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限 定鋁膜表面之待處理面積,使鋁膜表面與經陽極處理後產生多孔性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,陽極處理的電解液主要以硫酸、磷酸、或草酸為主,利用10vol.%(體積百分比)硫酸水溶液為電解液、外加20伏特直流電壓、陽極處理時間3分鐘、電解液溫度為10℃、可使金屬鋁薄膜完全反應成透明的三氧化二鋁薄膜,因此反應區呈現透明玻璃狀。 The anode treatment of the aluminum film on the surface of the 4 吋 glass was carried out by the mold body of Fig. 1. The glass surface of this sample is vapor-deposited with an aluminum film having a thickness of 1 μm, and the aluminum film is reacted to form a porous aluminum oxide film by anodization. Use the opening range of the mold The area to be treated on the surface of the aluminum film is such that the surface of the aluminum film is treated with a porous aluminum oxide film after the anode treatment, and the applied voltage and electrolyte composition are used to control the distribution of the pore density and the size of the pore, and the anode is treated. The electrolyte is mainly composed of sulfuric acid, phosphoric acid, or oxalic acid. The 10 vol.% (volume percent) aqueous solution of sulfuric acid is used as the electrolyte, plus 20 volts DC voltage, the anode treatment time is 3 minutes, and the electrolyte temperature is 10 ° C. The film is completely reacted into a transparent aluminum oxide film, so the reaction zone is in the form of a transparent glass.

【實施例12】 [Embodiment 12]

以第1圖之模具實體進行4吋玻璃表面鋁膜之陽極處理處理。此範例玻璃表面蒸鍍有一層厚度為1μm之鋁膜,經陽極處理後可使鋁膜反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁膜表面之待處理面積,使鋁膜表面與經陽極處理後產生多孔性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,陽極處理的電解液主要以硫酸、磷酸、或草酸為主,利用1vol.%(體積百分比)磷酸水溶液為電解液、外加120伏特直流電壓、陽極處理時間4分鐘、電解液溫度為-1℃、可使金屬鋁薄膜完全反應成透明的三氧化二鋁薄膜,因此反應區呈現透明玻璃狀。 The anode treatment of the aluminum film on the surface of the 4 吋 glass was carried out by the mold body of Fig. 1. The glass surface of this sample is vapor-deposited with an aluminum film having a thickness of 1 μm, and the aluminum film is reacted to form a porous aluminum oxide film by anodization. The opening area of the mold is used to define the area to be treated on the surface of the aluminum film, and the surface of the aluminum film is treated with a porous aluminum oxide film after the anode treatment, and the applied voltage and electrolyte composition are used to control the distribution of the pore density and the pores. The size and anode treated electrolyte are mainly sulfuric acid, phosphoric acid, or oxalic acid. The 1vol.% (volume percent) phosphoric acid aqueous solution is used as the electrolyte, plus 120 volts DC voltage, the anode treatment time is 4 minutes, and the electrolyte temperature is -1. °C, the metal aluminum film can be completely reacted into a transparent aluminum oxide film, so the reaction zone is transparent glass.

【實施例13】 [Example 13]

以第1圖之模具實體進行4吋鋁片表面之陽極處理處理。此範例將表面經過機械研磨之鋁片再經陽極處理後可使鋁片反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁片表面之待處 理面積,使鋁片表面與經陽極處理後產生多孔性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,陽極處理的電解液主要以硫酸、磷酸、或草酸為主,第9圖顯示利用3wt.%(重量百分比)草酸水溶液為電解液、外加40伏特直流電壓、陽極處理時間1小時、電解液溫度為25℃、可使金屬鋁片表面反應產生透明的三氧化二鋁薄膜,再利用飽和氯化銅溶液將殘留的鋁基材移除後可得多孔性透明的三氧化二鋁薄膜,其顯微結構影像如第10圖所示。 The anodizing treatment of the surface of the 4 Å aluminum sheet was carried out by the mold body of Fig. 1. In this example, the surface of the mechanically ground aluminum sheet is anodized to react the aluminum sheet into a porous aluminum oxide film. Using the opening range of the mold to define the surface of the aluminum sheet The area of the aluminum sheet is made of a film of aluminum oxide which is porous after being anodized, and the applied voltage and electrolyte composition are used to control the distribution of pore density and the size of the pore. The electrolyte treated by the anode is mainly sulfuric acid. Phosphoric acid or oxalic acid is the main one. Figure 9 shows that the surface of the metal aluminum sheet can be made by using 3wt.% (by weight) aqueous oxalic acid solution as electrolyte, 40 volt DC voltage, 1 hour anodic treatment time and 25 °C electrolyte temperature. The reaction produces a transparent aluminum oxide film, and the residual aluminum substrate is removed by using a saturated copper chloride solution to obtain a porous transparent aluminum oxide film, and the microstructure image thereof is shown in FIG.

【實施例14】 [Embodiment 14]

以第1圖之模具實體進行4吋鋁片表面之陽極處理處理。此範例將表面經過機械研磨之鋁片再經陽極處理後可使鋁片反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁片表面之待處理面積,使鋁片表面與經陽極處理後產生多孔性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,陽極處理的電解液主要以硫酸、磷酸、或草酸為主,利用10vol.%(體積百分比)硫酸水溶液為電解液、外加20伏特直流電壓、陽極處理時間1小時、電解液溫度為15℃、可使金屬鋁片表面反應產生透明的三氧化二鋁薄膜,再利用飽和氯化銅溶液將殘留的鋁基材移除後可得透明的三氧化二鋁薄膜。 The anodizing treatment of the surface of the 4 Å aluminum sheet was carried out by the mold body of Fig. 1. In this example, the surface of the mechanically ground aluminum sheet is anodized to react the aluminum sheet into a porous aluminum oxide film. The opening area of the mold is used to define the area to be treated on the surface of the aluminum sheet, and the surface of the aluminum sheet is treated with anodized aluminum oxide film, and the applied voltage and electrolyte composition are used to control the distribution of pore density and the pores. The size, anode treated electrolyte is mainly sulfuric acid, phosphoric acid, or oxalic acid, using 10vol.% (by volume) sulfuric acid aqueous solution as electrolyte, plus 20 volts DC voltage, anode treatment time 1 hour, electrolyte temperature 15 °C The surface of the metal aluminum sheet can be reacted to produce a transparent aluminum oxide film, and the residual aluminum substrate can be removed by using a saturated copper chloride solution to obtain a transparent aluminum oxide film.

【實施例15】 [Example 15]

以第1圖之模具實體進行4吋鋁片表面之陽極處理處理。 此範例將表面經過機械研磨之鋁片再經陽極處理後可使鋁片反應成多孔性之三氧化二鋁薄膜。利用模具之開口範圍限定鋁片表面之待處理面積,使鋁片表面與經陽極處理後產生多孔性之三氧化二鋁薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,陽極處理的電解液主要以硫酸、磷酸、或草酸為主,利用1vol.%(體積百分比)磷酸水溶液為電解液、外加180伏特直流電壓、陽極處理時間1小時、電解液溫度為-3℃、可使金屬鋁片表面反應產生透明的三氧化二鋁薄膜,再利用飽和氯化銅溶液將殘留的鋁基材移除後可得透明的三氧化二鋁薄膜。 The anodizing treatment of the surface of the 4 Å aluminum sheet was carried out by the mold body of Fig. 1. In this example, the surface of the mechanically ground aluminum sheet is anodized to react the aluminum sheet into a porous aluminum oxide film. The opening area of the mold is used to define the area to be treated on the surface of the aluminum sheet, and the surface of the aluminum sheet is treated with anodized aluminum oxide film, and the applied voltage and electrolyte composition are used to control the distribution of pore density and the pores. The size and anode treated electrolyte are mainly sulfuric acid, phosphoric acid, or oxalic acid. The 1vol.% (volume percent) phosphoric acid aqueous solution is used as the electrolyte, plus 180 volts DC voltage, the anode treatment time is 1 hour, and the electrolyte temperature is -3. °C, the surface of the metal aluminum sheet can be reacted to produce a transparent aluminum oxide film, and the residual aluminum substrate is removed by using a saturated copper chloride solution to obtain a transparent aluminum oxide film.

【實施例16】 [Example 16]

以第1圖之模具實體進行6吋鈦片表面之陽極處理處理。此範例將表面經過機械研磨之鈦片再經陽極處理後可使鈦片反應成多孔性之二氧化鈦薄膜。利用模具之開口範圍限定鈦片表面之待處理面積,使鈦片表面與經陽極處理後產生多孔性之二氧化鈦薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,陽極處理的電解液主要以氟化氨或氫氟酸主,第11圖顯示利用0.4wt.% NH4F(氟化氨)+2vol.% H2O+98vol.% Ethyl glycol(乙二醇)為電解液、外加60伏特直流電壓、陽極處理時間1小時、電解液溫度為25℃、可使金屬鈦片表面反應產生多孔性透明的二氧化鈦薄膜,其顯微結構影像如第12圖所示。 The anode treatment of the surface of the 6-inch titanium sheet was carried out in the mold body of Fig. 1. In this example, the surface of the mechanically ground titanium sheet is anodized to react the titanium sheet into a porous titanium dioxide film. The opening area of the mold is used to define the area to be treated on the surface of the titanium sheet, and the surface of the titanium sheet and the titanium oxide film which is porous after the anode treatment are used, and the distribution of the pore density and the size of the pore are controlled by the applied voltage and the electrolyte composition, and the anode is used. The treated electrolyte is mainly fluorinated ammonia or hydrofluoric acid, and Figure 11 shows the use of 0.4 wt.% NH 4 F (fluorinated ammonia) + 2 vol.% H 2 O + 98 vol.% Ethyl glycol (ethylene glycol) For the electrolyte, an external DC voltage of 60 volts, an anodic treatment time of 1 hour, and an electrolyte temperature of 25 ° C, the surface of the titanium metal sheet can be reacted to produce a porous transparent titanium oxide film, and the microstructure image thereof is as shown in FIG.

【實施例17】 [Example 17]

以第1圖之模具實體進行6吋鈦片表面之陽極處理處理。此範例將表面經過機械研磨之鈦片再經陽極處理後可使鈦片反應成多孔性之二氧化鈦薄膜。利用模具之開口範圍限定鈦片表面之待處理面積,使鈦片表面與經陽極處理後產生多孔性之二氧化鈦薄膜,並利用外加電壓與電解液成份來控制孔密度的分佈與孔洞的大小,陽極處理的電解液主要以氟化氨或氫氟酸主,第11圖顯示利用0.4vol.% HF(氫氟酸)水溶液為電解液、外加20伏特直流電壓、陽極處理時間20分鐘、電解液溫度為25℃、可使金屬鈦片表面反應產生多孔性透明的二氧化鈦薄膜。 The anode treatment of the surface of the 6-inch titanium sheet was carried out in the mold body of Fig. 1. In this example, the surface of the mechanically ground titanium sheet is anodized to react the titanium sheet into a porous titanium dioxide film. The opening area of the mold is used to define the area to be treated on the surface of the titanium sheet, and the surface of the titanium sheet and the titanium oxide film which is porous after the anode treatment are used, and the distribution of the pore density and the size of the pore are controlled by the applied voltage and the electrolyte composition, and the anode is used. The treated electrolyte is mainly fluorinated ammonia or hydrofluoric acid. Figure 11 shows the use of 0.4 vol.% HF (hydrofluoric acid) aqueous solution as electrolyte, plus 20 volt DC voltage, anode treatment time 20 minutes, electrolyte temperature At 25 ° C, the surface of the titanium metal sheet can be reacted to produce a porous transparent titanium oxide film.

【實施例18】 [Embodiment 18]

以第1圖之模具實體進行鋁材表面之電解拋光。此範例將表面經過酸洗與鹼洗後之鋁材進行電解拋光使鋁材表面具有鏡面反射效果。利用模具之開口範圍限定鋁片表面之待處理面積,並利用外加電壓與電解液成份來控制電解拋光的品質,電解拋光的條件為:5~20%過氯酸(HClO4)+5~20%單丁醚乙二脂(CH3(CH2)3OCH2CH2OH)+85~95%乙醇(C2H6O),電解液溫度為2~40℃,電解電壓為5~50伏特,電解拋光時間為1~10分鐘,第13圖顯示較佳的電解拋光操作條件為15%過氯酸(HClO4)+15%單丁醚乙二脂(CH3(CH2)3OCH2CH2OH)+70%乙醇(C2H6O),電解液溫度為25℃,電解電壓為40伏特,電解拋光時間為1.5分鐘,利用本模具處理後的鋁板表面具有光學級的反射 平面,其金相顯微結構如第14圖所示。 The surface of the aluminum material was electropolished with the mold body of Fig. 1. In this example, the surface of the aluminum material after pickling and alkali washing is electropolished to give a specular reflection effect on the surface of the aluminum. The opening area of the mold is used to define the area to be treated on the surface of the aluminum sheet, and the applied voltage and electrolyte composition are used to control the quality of the electropolishing. The conditions of the electropolishing are: 5-20% perchloric acid (HClO 4 ) + 5~20 % monobutyl ether ethylene diester (CH 3 (CH 2 ) 3 OCH 2 CH 2 OH) + 85 ~ 95% ethanol (C 2 H 6 O), electrolyte temperature is 2 ~ 40 ° C, electrolysis voltage is 5 ~ 50 Volt, electropolishing time is 1~10 minutes, Figure 13 shows the best electropolishing operation condition is 15% perchloric acid (HClO 4 ) + 15% monobutyl ether ethylene diester (CH 3 (CH 2 ) 3 OCH 2 CH 2 OH)+70% ethanol (C 2 H 6 O), the electrolyte temperature is 25 ° C, the electrolysis voltage is 40 volts, the electropolishing time is 1.5 minutes, and the surface of the aluminum plate treated with the mold has an optical grade reflection. The plane, its metallographic microstructure is shown in Figure 14.

【實施例19】 [Example 19]

以第1圖之模具實體進行鋁材表面之電解拋光。此範例將表面經過酸洗與鹼洗後之鋁材進行電解拋光使鋁材表面具有鏡面反射效果。利用模具之開口範圍限定鋁片表面之待處理面積,並利用外加電壓與電解液成份來控制電解拋光的品質,電解拋光操作條件為15%過氯酸(HClO4)+15%單丁醚乙二脂(CH3(CH2)3OCH2CH2OH)+70%乙醇(C2H6O),電解液溫度為10℃,電解電壓為40伏特,電解拋光時間為5分鐘,利用本模具處理後的鋁板表面具有光學級的反射平面。 The surface of the aluminum material was electropolished with the mold body of Fig. 1. In this example, the surface of the aluminum material after pickling and alkali washing is electropolished to give a specular reflection effect on the surface of the aluminum. The opening area of the mold is used to define the area to be treated on the surface of the aluminum sheet, and the quality of the electropolishing is controlled by the applied voltage and the electrolyte composition. The electropolishing operation condition is 15% perchloric acid (HClO 4 ) + 15% monobutyl ether B Diester (CH 3 (CH 2 ) 3 OCH 2 CH 2 OH) + 70% ethanol (C 2 H 6 O), the electrolyte temperature is 10 ° C, the electrolysis voltage is 40 volts, and the electropolishing time is 5 minutes. The surface of the aluminum plate after the mold treatment has an optical level of reflection plane.

【實施例20】 [Example 20]

以第1圖之模具實體進行鋁材表面之電解拋光。此範例將表面經過酸洗與鹼洗後之鋁材進行電解拋光使鋁材表面具有鏡面反射效果。利用模具之開口範圍限定鋁片表面之待處理面積,並利用外加電壓與電解液成份來控制電解拋光的品質,電解拋光操作條件為15%過氯酸(HClO4)+15%單丁醚乙二脂(CH3(CH2)3OCH2CH2OH)+70%乙醇(C2H6O),電解液溫度為35℃,電解電壓為40伏特,電解拋光時間為1分鐘,利用本模具處理後的鋁板表面具有光學級的反射平面,此平整的表面可做為發光二極體的二次光學鏡或太陽能電池的折射或聚光鏡的應用。 The surface of the aluminum material was electropolished with the mold body of Fig. 1. In this example, the surface of the aluminum material after pickling and alkali washing is electropolished to give a specular reflection effect on the surface of the aluminum. The opening area of the mold is used to define the area to be treated on the surface of the aluminum sheet, and the quality of the electropolishing is controlled by the applied voltage and the electrolyte composition. The electropolishing operation condition is 15% perchloric acid (HClO 4 ) + 15% monobutyl ether B Diester (CH 3 (CH 2 ) 3 OCH 2 CH 2 OH) + 70% ethanol (C 2 H 6 O), electrolyte temperature is 35 ° C, electrolysis voltage is 40 volts, electropolishing time is 1 minute, using this The surface of the aluminum plate after the mold treatment has an optical level reflection plane, and the flat surface can be used as a secondary optical mirror of a light-emitting diode or a refraction or condensing mirror of a solar cell.

【實施例21】 [Example 21]

以第1圖之模具實體進行鈦材表面之電解拋光。此範例將表面經過酸洗與鹼洗後之鈦材進行電解拋光使鋁材表面具有鏡面反射效果。利用模具之開口範圍限定鈦片表面之待處理面積,並利用外加電壓與電解液成份來控制電解拋光的品質,電解拋光的條件為:5~20%過氯酸(HClO4)+5~20%單丁醚乙二脂(CH3(CH2)3OCH2CH2OH)+85~95%甲醇(CH3OH),電解液溫度為2~40℃,電解電壓為5~60伏特,電解拋光時間為1~10分鐘,較佳的電解拋光操作條件為5% perchloric acid(HClO4)+53% ethylene glycol monobutylether(HOCH2CH2OC4H9)+42% methanol(CH3OH),電解液溫度為25℃,電解電壓為52伏特,電解拋光時間為3分鐘。利用本模具處理後的鈦板表面具有光學級的反射平面。 Electrolytic polishing of the surface of the titanium material is carried out using the mold body of Fig. 1. In this example, the surface of the titanium material after acid pickling and alkali washing is electropolished to give a specular reflection effect on the surface of the aluminum. The area of the surface of the titanium sheet is limited by the opening range of the mold, and the quality of the electropolishing is controlled by the applied voltage and the electrolyte composition. The conditions of the electropolishing are: 5-20% perchloric acid (HClO 4 ) + 5~20 % monobutyl ether ethylene diester (CH 3 (CH 2 ) 3 OCH 2 CH 2 OH) + 85 ~ 95% methanol (CH 3 OH), the electrolyte temperature is 2 ~ 40 ° C, the electrolysis voltage is 5 ~ 60 volts, The electropolishing time is 1 to 10 minutes, and the preferred electropolishing operation conditions are 5% perchloric acid (HClO 4 ) + 53% ethylene glycol monobutylether (HOCH 2 CH 2 OC 4 H 9 ) + 42% methanol (CH 3 OH) The electrolyte temperature was 25 ° C, the electrolysis voltage was 52 volts, and the electropolishing time was 3 minutes. The surface of the titanium plate treated by the mold has an optical level reflection plane.

【實施例22】 [Example 22]

以第1圖之模具實體進行金屬表面變色處理。此範例金屬表面變色處理所使用之金屬板為鈦金屬。利用模具之開口範圍限定鈦金屬表面之待處理面積,使鈦金屬表面與經陽極處理所生成的二氧化鈦薄膜與鈦基材產生干涉效應,並利用外加電壓控制薄膜的厚度,隨著二氧化鈦薄膜厚度的變化鈦金屬表面會干涉出不同的顏色,陽極處理的電解液為不包含氟、氯、溴、碘成份的化學溶液,陽極處理條件為1~100伏特(V)、0~30℃、1~60秒,其中較佳的陽極處理操作條 件為10vol.%硫酸水溶液、外加10、20、40、60、80伏特直流電壓、陽極處理時間2秒,可分別獲得金色、藍色、黃色、綠色、與粉紅色的干涉薄膜,利用本模具處理後的鈦板表面具有顏色的干涉薄膜,此干涉薄膜可做裝飾或材料的標示應用。 The metal surface is discolored by the mold body of Fig. 1. The metal plate used in the metal surface discoloration treatment of this example is titanium metal. The opening area of the mold is used to define the area to be treated of the titanium metal surface, so that the surface of the titanium metal and the titanium dioxide film formed by the anodizing process have an interference effect with the titanium substrate, and the thickness of the film is controlled by the applied voltage, along with the thickness of the titanium dioxide film. The surface of the changed titanium metal interferes with different colors. The electrolyte treated by the anode is a chemical solution containing no fluorine, chlorine, bromine or iodine. The anode treatment conditions are 1~100 volts (V), 0~30 °C, 1~. 60 seconds, of which the preferred anode treatment strip The material is 10 vol.% sulfuric acid aqueous solution, plus 10, 20, 40, 60, 80 volts DC voltage, and the anode treatment time is 2 seconds, respectively, and the interference films of gold, blue, yellow, green, and pink can be respectively obtained, and the mold is used. The surface of the treated titanium plate has a color interference film, which can be used for decorative or material marking applications.

【實施例23】 [Example 23]

以第1圖之模具實體進行金屬表面變色處理。此範例金屬表面變色處理所使用之金屬板為鈦金屬。利用模具之開口範圍限定鈦金屬表面之待處理面積,使鈦金屬表面與經陽極處理所生成的二氧化鈦薄膜與鈦基材產生干涉效應,並利用外加電壓控制薄膜的厚度,隨著二氧化鈦薄膜厚度的變化鈦金屬表面會干涉出不同的顏色,陽極處理的電解液為不包含氟、氯、溴、碘成份的化學溶液,陽極處理條件為1~100伏特(V)、0~30℃、1~60秒,當陽極處理操作條件為10vol.%硫酸水溶液、外加100伏特直流電壓、陽極處理時間2秒,可獲得紫色的干涉薄膜,其顯微結構為局部破裂的干涉薄膜,因此外加100伏特直流電壓為干涉薄膜成長的極限電壓。 The metal surface is discolored by the mold body of Fig. 1. The metal plate used in the metal surface discoloration treatment of this example is titanium metal. The opening area of the mold is used to define the area to be treated of the titanium metal surface, so that the surface of the titanium metal and the titanium dioxide film formed by the anodizing process have an interference effect with the titanium substrate, and the thickness of the film is controlled by the applied voltage, along with the thickness of the titanium dioxide film. The surface of the changed titanium metal interferes with different colors. The electrolyte treated by the anode is a chemical solution containing no fluorine, chlorine, bromine or iodine. The anode treatment conditions are 1~100 volts (V), 0~30 °C, 1~. 60 seconds, when the anode treatment operating conditions are 10 vol.% sulfuric acid aqueous solution, plus 100 volts DC voltage, and the anode treatment time is 2 seconds, a purple interference film can be obtained, the microstructure of which is a partially broken interference film, so 100 volts DC is applied. The voltage is the limiting voltage at which the interference film grows.

【實施例24】 [Example 24]

以第1圖之模具實體進行金屬表面變色處理。此範例金屬表面變色處理所使用之金屬板為鈦金屬。利用模具之開口範圍限定鈦金屬表面之待處理面積,使鈦金屬表面與經陽極處理所生成的二氧化鈦薄膜與鈦基材產生干涉效應,並利用外加電壓控制薄膜的厚度, 隨著二氧化鈦薄膜厚度的變化鈦金屬表面會干涉出不同的顏色,陽極處理的電解液為不包含氟、氯、溴、碘成份的化學溶液,陽極處理條件為1~100伏特(V)、0~30℃、1~60秒,當陽極處理操作條件為10vol.%硫酸水溶液、外加60伏特直流電壓、陽極處理時間2秒,可在經過電解拋光過後的鈦材表面上產生彩色之馬賽克外觀,其原因乃是各晶粒之晶面在定電壓條件下薄膜的成長速度不同造成各晶面表面有不同厚度之干涉薄膜所致,其顯微影像如第15圖所示。 The metal surface is discolored by the mold body of Fig. 1. The metal plate used in the metal surface discoloration treatment of this example is titanium metal. The opening area of the mold is used to define the area to be treated of the titanium metal surface, so that the surface of the titanium metal and the titanium oxide film formed by the anodization have an interference effect with the titanium substrate, and the thickness of the film is controlled by an applied voltage. As the thickness of the titanium dioxide film changes, the surface of the titanium metal interferes with different colors. The electrolyte treated by the anode is a chemical solution containing no fluorine, chlorine, bromine or iodine. The anode treatment condition is 1~100 volts (V), 0. ~30 ° C, 1 ~ 60 seconds, when the anode treatment operating conditions are 10vol.% sulfuric acid aqueous solution, plus 60 volts DC voltage, anode treatment time of 2 seconds, can produce a colored mosaic appearance on the surface of the electro-polished titanium material. The reason is that the crystal planes of the crystal grains are different in the growth rate of the film under constant voltage conditions, and the interference film of different thicknesses on the surface of each crystal plane is caused, and the microscopic image is as shown in Fig. 15.

10‧‧‧化學處理用模具分解結構圖 10‧‧‧Molding structure decomposition diagram for chemical treatment

101、201、306‧‧‧導電線 101, 201, 306‧‧‧ conductive lines

102、202、305‧‧‧矽膠套管 102, 202, 305‧ ‧ 矽 rubber casing

103、203、304‧‧‧導電線防水蓋 103, 203, 304‧‧‧ conductive waterproof cover

104、204、303‧‧‧導電線防水座 104, 204, 303‧‧‧ conductive line waterproof seat

105、205‧‧‧導電線防水座O型環 105,205‧‧‧Electrical line waterproof seat O-ring

106‧‧‧導電棒 106‧‧‧ Conductive rod

107、206、301‧‧‧模具下座 107, 206, 301‧‧‧ mold lower seat

108、207、302‧‧‧模具下座O型環 108, 207, 302‧‧‧ mold lower seat O-ring

109‧‧‧導電片 109‧‧‧Conductor

110‧‧‧上蓋防水墊片 110‧‧‧Top cover waterproof gasket

111‧‧‧工作樣品 111‧‧‧Work samples

112、208、50‧‧‧模具上蓋 112, 208, 50‧‧‧ mold cover

113、506‧‧‧工作樣品之開口反應面積 Opening reaction area of 113, 506‧‧ working samples

20‧‧‧化學處理用模具組合結構圖 20‧‧‧Mold processing combined structure diagram

30‧‧‧化學處理用模具下座-導電線-導電棒組合結構圖 30‧‧‧Mechanical treatment mold lower seat-conducting wire-conductive rod combination structure diagram

40‧‧‧化學處理用模具之導電片結構 40‧‧‧Conductor sheet structure for chemical processing molds

401‧‧‧導電片第一表面 401‧‧‧First surface of conductive sheet

402‧‧‧導電片第二表面 402‧‧‧Second surface of conductive sheet

403‧‧‧導電棒固定孔洞 403‧‧‧ Conductive rod fixing hole

501‧‧‧模具上蓋外徑 501‧‧‧Mold cover outer diameter

502‧‧‧模具上蓋內徑 502‧‧‧Mold cover inner diameter

503‧‧‧模具上蓋與下座之接觸面 503‧‧‧Contact surface of the mold upper cover and the lower seat

504‧‧‧模具上蓋母牙 504‧‧‧Mold upper cover

505‧‧‧模具上蓋防水矽膠片座 505‧‧‧Mold cover with waterproof enamel film holder

60‧‧‧化學處理用模具之下座 60‧‧‧Under the mold for chemical treatment

601‧‧‧下座公牙 601‧‧‧The lower teeth

602‧‧‧下座扭力輔助孔 602‧‧‧Lower torque assist hole

603‧‧‧導電線防水座O型環槽 603‧‧‧Electrical line waterproof seat O-ring groove

604‧‧‧下座母牙 604‧‧‧The lower teeth

第1圖 化學處理用模具分解結構圖。 Fig. 1 is a structural view of a mold for chemical processing.

第2圖 化學處理用模具組合結構圖。 Fig. 2 is a structural diagram of a combination of molds for chemical processing.

第3圖 化學處理用模具下座-導電線-導電棒組合結構圖。 Fig. 3 The structure of the lower part of the chemical processing mold-conducting wire-conductive bar.

第4圖 化學處理用模具之導電片。 Figure 4 Conductive sheet of a mold for chemical processing.

第5圖 化學處理用模具之上蓋。 Figure 5 The chemical treatment is covered with a mold.

第6圖 化學處理用模具之下座。 Figure 6 The lower seat of the chemical processing mold.

第7圖 六吋晶圓表面薄膜處理後之影像。 Figure 7 Sixth image of the wafer surface film after processing.

第8圖 四吋玻璃表面薄膜處理後之影像。 Figure 8 Image of a four-glass glass surface treated film.

第9圖 四吋鋁板表面陽極處理後之影像。 Figure 9 Image of the anodized aluminum plate surface after anodizing.

第10圖 四吋鋁板表面陽極處理後之顯微結構影像。 Figure 10 Microstructured image of the surface of the four-inch aluminum plate after anodizing.

第11圖 六吋鈦板表面陽極處理後之影像。 Figure 11 Image of the anodized surface of the titanium dioxide plate.

第12圖 六吋鈦板表面陽極處理後之顯微結構影像。 Figure 12 Microstructured image of the surface of the titanium dioxide plate after anodizing.

第13圖 鋁塊表面電解拋光後之影像。 Figure 13 Image of the surface of the aluminum block after electropolishing.

第14圖 鋁塊表面電解拋光後之表面顯微影像。 Figure 14 Surface microscopic image of the surface of the aluminum block after electropolishing.

第15圖 鈦板表面經陽極處理後所產生的馬賽克顯微影像。 Figure 15 A mosaic microscopic image of the surface of a titanium plate after anodization.

1O‧‧‧化學處理用模具分解結構圖 1O‧‧‧Decomposition structure diagram for chemical treatment

101‧‧‧導電線 101‧‧‧Flexible wire

102‧‧‧矽膠套管 102‧‧‧矽 rubber casing

103‧‧‧導電線防水蓋 103‧‧‧Flexible waterproof cover

104‧‧‧導電線防水座 104‧‧‧Electrical line waterproof seat

105‧‧‧導電線防水座O型環 105‧‧‧Electrical line waterproof seat O-ring

106‧‧‧導電棒 106‧‧‧ Conductive rod

107‧‧‧模具下座 107‧‧‧Mold lower seat

108‧‧‧模具下座O型環 108‧‧‧Mould lower seat O-ring

109‧‧‧導電片 109‧‧‧Conductor

110‧‧‧上蓋防水墊片 110‧‧‧Top cover waterproof gasket

111‧‧‧工作樣品 111‧‧‧Work samples

112‧‧‧模具上蓋 112‧‧‧Mold cover

113‧‧‧工作樣品之開口反應面積 113‧‧‧Open reaction area of working samples

Claims (9)

一種適用於發光二極體之二次光學鏡或太陽能電池的折射或聚光鏡之局部表面處理用模具,其結構包含:用於連導電片與導電線之間的導電棒;用於連接導電棒與樣品之間的導電片;來連接於導電棒與電源供應器之間的導電線;用於防止導電線與下座之間滲水的導電線防水座、導電線防水蓋、與矽膠套管;用於防止液體由導電線滲入模具下座內之導電線防水座O型環槽;O型環;用於固定導電片與工作試片之模具下座;用於結合模具上蓋母牙之下座公牙;用於結合導電線防水座公牙之下座母牙。 A partial surface treatment mold suitable for a secondary optical mirror of a light-emitting diode or a refractive or condensing mirror of a solar cell, the structure comprising: a conductive rod for connecting a conductive sheet and a conductive line; and for connecting the conductive rod with a conductive sheet between the samples; a conductive line connected between the conductive rod and the power supply; a conductive waterproof seat for preventing water from penetrating between the conductive line and the lower seat; a conductive waterproof cover, and a silicone sleeve; The O-ring groove for preventing the liquid from infiltrating into the lower seat of the mold by the conductive wire; the O-ring; the lower seat of the mold for fixing the conductive sheet and the working test piece; Tooth; used to bond the conductive teeth to the lower teeth of the male teeth. 如請求項1之一種適用於發光二極體之二次光學鏡或太陽能電池的折射或聚光鏡之局部表面處理用模具,其中包括:用於輔助施加一扭力使下座公牙與上蓋母牙的結合緊密度之下座扭力輔助孔;用於防止滲水之模具下座O型環用於定義工作樣品之開口反應面積的上蓋;用於防止下座與上蓋之間滲水的模具下座O型環;用來固定工作樣品之導電片上蓋防水墊片。 A partial surface treatment mold suitable for a secondary optical mirror of a light-emitting diode or a refractive or condensing mirror of a solar cell, comprising: a method for assisting application of a torsion force to a lower male tooth and a upper male tooth Combined with the tightness of the seat under the auxiliary hole; the upper cover of the mold lower seat O-ring for preventing water seepage is used to define the open reaction area of the working sample; the mold lower seat O-ring for preventing water seepage between the lower seat and the upper cover The conductive sheet upper cover waterproof gasket used to fix the working sample. 如請求項1之一種適用於發光二極體之二次光學鏡或太陽能電池的折射 或聚光鏡之局部表面處理用模具,其中模具上蓋結構包括模具上蓋外徑;模具上蓋內徑提供導電片第一表面固定用;模具上蓋與下座之接觸面提供防水矽膠片置放處;上蓋母牙用於結合模具下座公牙;模具上蓋防水矽膠片座用於防止液體由工作樣品之開口反應面積滲入模具上蓋母牙內。 A refraction of a secondary optic or solar cell suitable for a light-emitting diode, as in claim 1 Or a partial surface treatment mold of the concentrating mirror, wherein the mold upper cover structure comprises an outer diameter of the upper cover of the mold; the inner diameter of the upper cover of the mold provides a first surface for fixing the conductive sheet; the contact surface of the upper cover and the lower seat of the mold provides a waterproof enamel film placement; The tooth is used to bond the lower teeth of the mold; the upper cover of the mold is used to prevent liquid from penetrating into the upper teeth of the mold cover by the open reaction area of the working sample. 如請求項1之適用於發光二極體之二次光學鏡或太陽能電池的折射或聚光鏡之局部表面處理用模具,其中上蓋樣品反應區可為單數或複數之幾合形狀特定面積。 The partial surface treatment mold for a secondary optical mirror of a light-emitting diode or a refractive or condensing mirror of a solar cell, wherein the reaction area of the upper cover sample may be a specific area of a single number or a plurality of shapes. 如請求項1之一種適用於發光二極體之二次光學鏡或太陽能電池的折射或聚光鏡之局部表面處理用模具,其中模具下座結構包括下座公牙用於結合模具上蓋母牙;下座扭力輔助孔用於輔助施加一扭力使下座公牙與上蓋母牙的結合緊密度;導電線防水座O型環槽用於防止液體由導電線滲入模具下座內之導電片;下座母牙用於結合導電線防水座公牙。 A partial surface treatment mold suitable for a secondary optical mirror of a light-emitting diode or a refractive or condensing mirror of a solar cell, wherein the mold lower seat structure comprises a lower seat male tooth for bonding the upper cover of the mold; The torque assisting hole is used to assist the application of a torsion force to make the lower seat male teeth and the upper cover male teeth tightly combined; the conductive wire waterproof seat O-ring groove is used to prevent the liquid from penetrating into the conductive piece in the lower seat of the mold; The mother teeth are used to bond the conductive waterproof seat male teeth. 如請求項1之一種適用於發光二極體之二次光學鏡或太陽能電池的折射或聚光鏡之局部表面處理用模具,其中導電片為一體成形或結合性之導體,其第一表面的直徑較大可置於模具之上蓋內,其第二表面的直徑較小可置於模具之下座內,第二表面上更 設置有導電棒固定孔用來增加導電棒在導電片上之接觸穩定性。 A partial surface treatment mold suitable for a secondary optical mirror of a light-emitting diode or a refractive or condensing mirror of a solar cell, wherein the conductive sheet is an integrally formed or bonded conductor having a diameter of a first surface thereof It can be placed in the upper cover of the mold, and the smaller diameter of the second surface can be placed in the lower seat of the mold, and the second surface is more A conductive rod fixing hole is provided for increasing the contact stability of the conductive rod on the conductive sheet. 如請求項1之一種適用於發光二極體之二次光學鏡或太陽能電池的折射或聚光鏡之局部表面處理用模具,其中當樣品進行電解、電解拋光、電鍍、陽極處理、蝕刻、浸鍍、酸洗、鹼洗、蒸鍍等反應時可防止液體或蒸氣滲入特定裸露區以外之表面。 A partial surface treatment mold suitable for a secondary optical mirror of a light-emitting diode or a refractive or condensing mirror of a solar cell, wherein the sample is subjected to electrolysis, electrolytic polishing, electroplating, anodizing, etching, immersion plating, Pickling, caustic washing, evaporation, etc. prevent liquid or vapor from penetrating into the surface outside the specific exposed area. 如請求項1之一種適用於發光二極體之二次光學鏡或太陽能電池的折射或聚光鏡之局部表面處理用模具,其中模具之材質包含金屬、陶瓷、玻璃、聚合物、或金屬表面經絕緣處理等絕緣材料。 A partial surface treatment mold suitable for a secondary optical mirror of a light-emitting diode or a refractive or condensing mirror of a solar cell, wherein the material of the mold comprises metal, ceramic, glass, polymer, or metal surface is insulated. Handling of insulating materials. 如請求項1之一種適用於發光二極體之二次光學鏡或太陽能電池的折射或聚光鏡之局部表面處理用模具,其中墊片特性包含絕緣、防水、具壓縮性的材質。 One of the claims 1 is suitable for a secondary optical mirror of a light-emitting diode or a partial surface treatment mold for a refractive or condensing mirror of a solar cell, wherein the gasket property comprises an insulating, waterproof, compressible material.
TW103115741A 2014-05-02 2014-05-02 A mold for partial sureface treatment of secondary optics lens on light-emitting diodes or condenser or refraction lens on solar cell TWI480428B (en)

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TW200923136A (en) * 2007-11-16 2009-06-01 Univ Nat Chiao Tung Electrochemistry mold
TW201323667A (en) * 2011-12-12 2013-06-16 Nat Univ Chin Yi Technology A mold used for chemical treatment

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