TWI477893B - Manufacturing method of photomask - Google Patents
Manufacturing method of photomask Download PDFInfo
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- TWI477893B TWI477893B TW100123951A TW100123951A TWI477893B TW I477893 B TWI477893 B TW I477893B TW 100123951 A TW100123951 A TW 100123951A TW 100123951 A TW100123951 A TW 100123951A TW I477893 B TWI477893 B TW I477893B
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Description
本發明係關於一種光罩之製造方法,特別關於一種應用於光學微影技術的光罩之製造方法。The present invention relates to a method of fabricating a photomask, and more particularly to a method of fabricating a photomask applied to optical lithography.
傳統的光學微影技術中,光罩對光阻層的紫外光(UV)曝光技術主要可以分為接觸式光學微影技術以及倍縮微影技術兩種。In the traditional optical lithography technology, the ultraviolet (UV) exposure technology of the photomask to the photoresist layer can be mainly divided into two types: contact optical lithography and doubling lithography.
接觸式光學微影技術所使用的光罩,其表面特徵圖案尺寸與實際複製於基板上的圖案為1:1的比例,而倍縮微影技術所使用的光罩,其表面特徵圖案尺寸則為實際複製於基板上圖案的數倍。因此,若需在基板上複製出次微米乃至奈米尺度的特徵圖案,則接觸式光學微影技術所使用的光罩會十分昂貴,同時,光罩表面的金屬圖案會與基板上的光阻層接觸摩擦,容易造成金屬圖案耗損使得光罩使用壽命減少;而倍縮微影技術所使用的光罩雖會較便宜,但所使用的曝光設備卻需要非常高的成本。簡言之,傳統光學微影技術在次微米與奈米尺度的製程是相當困難且昂貴的。The reticle used in the contact optical lithography technology has a surface feature pattern size that is 1:1 proportional to the pattern actually reproduced on the substrate, and the reticle used in the doubling lithography technique has a surface feature pattern size of Actually copied several times on the pattern on the substrate. Therefore, if a sub-micron or nano-scale feature pattern is to be reproduced on the substrate, the photomask used in the contact optical lithography technique can be very expensive, and at the same time, the metal pattern on the surface of the reticle and the photoresist on the substrate The contact friction of the layer is easy to cause the loss of the metal pattern to reduce the service life of the reticle; while the reticle used in the doubling lithography technology is cheaper, the exposure apparatus used requires a very high cost. In short, conventional optical lithography is quite difficult and expensive in sub-micron and nanoscale processes.
因此,如何提供一種光罩之製造方法,其所製造出來的光罩能夠在次微米與奈米尺度的製程上降低成本,並延長光罩之使用壽命,實為當前重要課題之一。Therefore, how to provide a method for manufacturing a reticle, which is capable of reducing the cost on the sub-micron and nano-scale processes and prolonging the service life of the reticle, is one of the current important topics.
有鑑於上述課題,本發明之目的為提供一種光罩之製造方法,其所製造出來的光罩能夠在次微米與奈米尺度的製程上降低成本,並延長光罩之使用壽命。In view of the above problems, an object of the present invention is to provide a method of manufacturing a photomask capable of reducing the cost in a sub-micron and nano-scale process and extending the life of the photomask.
為達上述目的,依據本發明之一種光罩之製造方法包含:提供一基板,基板之一側具有複數凸狀物,各凸狀物之一頂部為漸縮結構;形成一遮光層於基板之該側且覆蓋該等凸狀物;形成一蝕刻保護層於遮光層上;蝕刻位於該等凸狀物之頂部之該蝕刻保護層的部分;以及以剩餘之蝕刻保護層作為遮罩對遮光層進行蝕刻。To achieve the above object, a method of fabricating a photomask according to the present invention includes: providing a substrate having a plurality of protrusions on one side of the substrate, one of the protrusions having a tapered structure at the top; and forming a light shielding layer on the substrate The side covers and covers the protrusions; forming an etch protection layer on the light shielding layer; etching a portion of the etch protection layer on top of the protrusions; and using the remaining etch protection layer as a mask to the light shielding layer Etching is performed.
在一實施例中,基板之材質包含金屬材料、石英、玻璃材料、陶瓷材料、高分子聚合物(polymer)系列材料、有機材料、塑膠材料、半導體材料、無機材料、或上述材料中任二者以上所合成之材料。In one embodiment, the material of the substrate comprises a metal material, quartz, a glass material, a ceramic material, a polymer series material, an organic material, a plastic material, a semiconductor material, an inorganic material, or both of the above materials. The materials synthesized above.
在一實施例中,基板之材質包含可撓性材料,以製造出可撓式光罩。在進行接觸曝光過程中,光罩與光阻層能夠緊密貼合,而減少兩者之間隙,進而降低光罩透光區與光阻層之入射光反射率,並且避免光阻層淺層部分的側向曝光範圍擴大。In one embodiment, the material of the substrate comprises a flexible material to create a flexible reticle. During the contact exposure process, the photomask and the photoresist layer can be closely adhered to reduce the gap between the two, thereby reducing the incident light reflectance of the light transmissive region and the photoresist layer, and avoiding the shallow portion of the photoresist layer. The lateral exposure range is expanded.
在一實施例中,凸狀物係呈陣列設置,例如一維陣列、或二維陣列或二維不規則排列。In an embodiment, the protrusions are arranged in an array, such as a one-dimensional array, or a two-dimensional array or a two-dimensional irregular arrangement.
在一實施例中,凸狀物係呈長條形或錐狀。In one embodiment, the projections are elongated or tapered.
在一實施例中,遮光層之材質包含金屬材料、石英、玻璃材料、陶瓷材料、高分子聚合物系列材料、有機材料、塑膠材料、半導體材料、無機材料、或上述材料中任二者以上所合成之材料。遮光層之材料可視曝光所使用之光源種類而調整。In one embodiment, the material of the light shielding layer comprises a metal material, quartz, glass material, ceramic material, polymer material series material, organic material, plastic material, semiconductor material, inorganic material, or both of the above materials. Synthetic material. The material of the light shielding layer can be adjusted depending on the type of light source used for the exposure.
在一實施例中,蝕刻保護層之材質包含光阻、高分子聚合物系列材料、有機材料、塑膠材料、玻璃材料、陶瓷材料、石英、或上述材料中任二者以上所合成之材料。In one embodiment, the material of the etching protection layer comprises a photoresist, a polymer series material, an organic material, a plastic material, a glass material, a ceramic material, quartz, or a material synthesized by any two or more of the above materials.
在一實施例中,蝕刻保護層之材質包含金屬材料、半導體材料、無機材料、或上述材料中任二者以上所合成之材料。In one embodiment, the material of the etching protection layer comprises a metal material, a semiconductor material, an inorganic material, or a material synthesized by any two or more of the above materials.
在一實施例中,蝕刻保護層之蝕刻係藉由一乾式蝕刻或溼式蝕刻。其中,乾式蝕刻包含反應式離子蝕刻(RIE)製程、感應耦合式電漿(ICP)等電漿蝕刻製程,溼式蝕刻係以蝕刻液進行蝕刻。In one embodiment, the etching of the etch protection layer is by a dry etch or a wet etch. The dry etching includes a plasma etching process such as a reactive ion etching (RIE) process or an inductively coupled plasma (ICP), and the wet etching is performed by etching.
在一實施例中,遮光層之蝕刻係藉由乾式蝕刻或溼式蝕刻進行。In one embodiment, the etching of the light shielding layer is performed by dry etching or wet etching.
在一實施例中,光罩之製造方法更包含在遮光層進行蝕刻後,移除剩餘之蝕刻保護層。剩餘之蝕刻保護層之移除係藉由乾式蝕刻或溼式蝕刻進行。In an embodiment, the method of manufacturing the photomask further includes removing the remaining etching protection layer after the light shielding layer is etched. The removal of the remaining etch protection layer is performed by dry etching or wet etching.
承上所述,由本發明之製造方法所製成的光罩,其透光區為基板上凸狀物之頂部,由於頂部為漸縮結構,因而可將微米等級之光罩圖案,轉移至基板之光阻層且使其成為次微米或奈米等級之特徵圖案。As described above, the photomask made by the manufacturing method of the present invention has a light transmitting region which is a top portion of the convex portion on the substrate. Since the top portion has a tapered structure, the micron-sized mask pattern can be transferred to the substrate. The photoresist layer and makes it a characteristic pattern of sub-micron or nanoscale.
由於本發明可不需將傳統光罩圖案縮小至次微米或奈米等級,卻可製作出次微米或奈米等級圖案之光罩來進行使用,也不需使用倍縮微影技術所需的昂貴設備,因而可大幅降低成本。Since the present invention can reduce the conventional mask pattern to the sub-micron or nanometer level, it can be used to produce a sub-micron or nano-scale mask for use without using the expensive equipment required for doubling lithography. Therefore, the cost can be greatly reduced.
此外,由本發明之製造方法所製成的光罩,可搭載於移動載具上進行移動式曝光來達成轉移圖案的多樣化。Further, the photomask produced by the manufacturing method of the present invention can be mounted on a mobile vehicle and subjected to mobile exposure to achieve diversification of the transfer pattern.
此外,由於本發明光罩之凸狀物係接觸光阻層,且凸狀物之頂部無設置遮光層,因而可減少遮光層與光阻層接觸的面積,而延長光罩之使用壽命。In addition, since the convex shape of the photomask of the present invention contacts the photoresist layer, and the light shielding layer is not disposed on the top of the convex material, the area of contact between the light shielding layer and the photoresist layer can be reduced, and the service life of the photomask can be prolonged.
此外,由於凸狀物之頂部直接頂抵光阻層,因而光罩與光阻層能夠緊密貼合,而有效減少光罩與光阻層之間隙,進而減少兩者之間的光反射率並可縮小光阻層的側向曝光範圍,而能製造出高深寬比的光阻結構。並且若光罩使用可撓性材料製成,則可撓式光罩使光罩與光阻層更為緊密貼合,使得曝光後所轉移的特徵圖案之尺寸誤差優於一般的接觸式光學微影技術。並且可撓式光罩可使光罩的透光區與光阻層緊密接觸,進而降低一次性大面積、均勻且一致性曝光的困難度。In addition, since the top of the protrusion directly abuts against the photoresist layer, the photomask and the photoresist layer can be closely adhered to each other, thereby effectively reducing the gap between the photomask and the photoresist layer, thereby reducing the light reflectance between the two. The lateral exposure range of the photoresist layer can be reduced, and a high aspect ratio photoresist structure can be fabricated. And if the photomask is made of a flexible material, the flexible mask makes the photomask and the photoresist layer more closely adhered, so that the dimensional error of the characteristic pattern transferred after the exposure is superior to the general contact optical micro Shadow technology. Moreover, the flexible reticle can make the light transmissive area of the reticle in close contact with the photoresist layer, thereby reducing the difficulty of one-time large area, uniform and consistent exposure.
此外,由於本發明光罩之凸狀物的頂部為漸縮結構,因而可對曝光入射的光線產生聚焦效果,而減少入射光徑的擴散範圍。In addition, since the top of the convex portion of the reticle of the present invention has a tapered structure, it is possible to produce a focusing effect on the incident light, and to reduce the diffusion range of the incident optical path.
此外,本發明光罩之凸狀物的頂部為光罩之透光區。藉由控制頂部無遮光層的範圍大小,可調整曝光後得到之特徵圖案的尺寸。In addition, the top of the convex portion of the reticle of the present invention is a light transmitting region of the reticle. By controlling the size of the top surface without the light shielding layer, the size of the feature pattern obtained after exposure can be adjusted.
此外,本發明之剩餘的蝕刻保護層更可作為遮光層之保護層,避免遮光層與光阻層接觸磨損或污染,而延長光罩之使用壽命,同時減少清潔的次數。In addition, the remaining etch protection layer of the present invention can be used as a protective layer of the light shielding layer to prevent wear or contamination of the light shielding layer and the photoresist layer, thereby prolonging the service life of the reticle while reducing the number of cleanings.
以下將參照相關圖式,說明依本發明較佳實施例之一種光罩之製造方法,其中相同的元件將以相同的參照符號加以說明。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method of manufacturing a reticle according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, wherein the same elements will be described with the same reference numerals.
圖1為本發明較佳實施例之一種光罩之製造方法的步驟示意圖,其中主要包含步驟S01~S05,圖2A至圖2E為圖1之製造方法的流程示意圖。1 is a schematic view showing the steps of a method for manufacturing a reticle according to a preferred embodiment of the present invention, which mainly includes steps S01 to S05, and FIGS. 2A to 2E are schematic flow charts of the manufacturing method of FIG.
首先,如圖2A所示,製造方法包含提供一基板101,基板101之一側具有複數凸狀物102,各凸狀物102之一頂部103為漸縮結構。本發明不特別限制基板101之材料,其例如是包含高分子聚合物(polymer)系列材料(例如聚二甲基矽氧烷(PDMS))、有機材料、塑膠材料、半導體材料、無機材料、金屬材料,或上述材料中任二者以上所合成之材料。基板101之材料例如為石英、玻璃材料、陶瓷材料、或上述材料中任二者以上所合成之材料、或其他材料。基板101係至少部分透光。此外,基板101之材料可包含可撓性材料(例如聚對苯二甲二乙酯(PET)),以製作出可撓式光罩。First, as shown in FIG. 2A, the manufacturing method includes providing a substrate 101 having a plurality of protrusions 102 on one side thereof, and a top portion 103 of each of the protrusions 102 has a tapered structure. The material of the substrate 101 is not particularly limited in the present invention, and includes, for example, a polymer series material (for example, polydimethyl siloxane (PDMS)), an organic material, a plastic material, a semiconductor material, an inorganic material, and a metal. A material, or a material synthesized by any two or more of the above materials. The material of the substrate 101 is, for example, quartz, a glass material, a ceramic material, or a material synthesized by any two or more of the above materials, or other materials. The substrate 101 is at least partially transparent. In addition, the material of the substrate 101 may comprise a flexible material such as polyethylene terephthalate (PET) to make a flexible reticle.
在本實施例中,凸狀物102可呈陣列設置,例如一維陣列或二維陣列,其中二維陣列包含不規則設置。另外,凸狀物102可呈長條形、或錐狀或其他幾何形狀。如圖3所示,凸狀物102係呈一維陣列設置,且為長條形,凸狀物102之剖面為三角形。如圖4所示,凸狀物102呈二維陣列設置,且為角錐狀。In this embodiment, the protrusions 102 can be arranged in an array, such as a one-dimensional array or a two-dimensional array, wherein the two-dimensional array contains irregular settings. Additionally, the protrusions 102 can be elongated, or tapered or otherwise geometric. As shown in FIG. 3, the protrusions 102 are arranged in a one-dimensional array and are elongated, and the protrusions 102 have a triangular cross section. As shown in FIG. 4, the protrusions 102 are arranged in a two-dimensional array and have a pyramid shape.
凸狀物102之頂部為漸縮結構,其漸縮結構可例如為錐狀漸縮結構、梯形漸縮結構、或是其他漸縮結構,並可包含不對稱的漸縮結構。The top of the protrusion 102 is a tapered structure, and the tapered structure may be, for example, a tapered tapered structure, a trapezoidal tapered structure, or other tapered structure, and may include an asymmetric tapered structure.
接著,如圖2B所示,製造方法包含形成一遮光層104於基板101之該側且覆蓋該等凸狀物102。於此,遮光層104係完全覆蓋凸狀物102與基板之該側。遮光層104之材質可例如包含金屬材料、石英、玻璃材料、陶瓷材料、高分子聚合物系列材料、有機材料、塑膠材料、半導體材料、無機材料、或上述材料中任二者以上所合成之材料、或其他材料。於此,遮光層104為金屬層。遮光層104用以遮住曝光光源所發出之光線,因此其材料可依曝光光源種類而選定。Next, as shown in FIG. 2B, the manufacturing method includes forming a light shielding layer 104 on the side of the substrate 101 and covering the protrusions 102. Here, the light shielding layer 104 completely covers the side of the protrusion 102 and the substrate. The material of the light shielding layer 104 may include, for example, a metal material, a quartz material, a glass material, a ceramic material, a polymer material series material, an organic material, a plastic material, a semiconductor material, an inorganic material, or a material synthesized by any two or more of the above materials. , or other materials. Here, the light shielding layer 104 is a metal layer. The light shielding layer 104 is used to cover the light emitted by the exposure light source, so the material thereof can be selected according to the type of the exposure light source.
然後,如圖2C所示,製造方法包含形成一蝕刻保護層105於遮光層104上。於此,蝕刻保護層105係完全覆蓋遮光層104。蝕刻保護層105之材質可例如包含光阻、高分子聚合物系列材料、有機材料、塑膠材料、玻璃材料、陶瓷材料、石英、金屬材料、半導體材料、無機材料、或上述材料中任二者以上所合成之材料。Then, as shown in FIG. 2C, the manufacturing method includes forming an etch protection layer 105 on the light shielding layer 104. Here, the etching protection layer 105 completely covers the light shielding layer 104. The material of the etching protection layer 105 may include, for example, a photoresist, a polymer material series, an organic material, a plastic material, a glass material, a ceramic material, a quartz, a metal material, a semiconductor material, an inorganic material, or both of the above materials. The material synthesized.
本實施例之蝕刻保護層105的材質以光阻為例,光阻可藉由旋轉塗佈而形成。蝕刻保護層105之材質可依遮光層104之材質可選定。The material of the etching protection layer 105 of this embodiment is exemplified by photoresist, and the photoresist can be formed by spin coating. The material of the etching protection layer 105 can be selected according to the material of the light shielding layer 104.
然後,如圖2D所示,製造方法包含蝕刻位於該等凸狀物102之頂部103之蝕刻保護層105的部分。藉由蝕刻,可使蝕刻保護層105形成一缺口並使遮光層104露出。蝕刻保護層105之蝕刻係藉由一蝕刻製程進行。蝕刻製程可為乾式蝕刻或溼式蝕刻。其中,乾式蝕刻例如包含反應式離子蝕刻(RIE)製程、感應耦合式電漿(ICP)等電漿蝕刻製程;溼式蝕刻係例如藉由適當的蝕刻液進行蝕刻以形成非等向性蝕刻。Then, as shown in FIG. 2D, the fabrication method includes etching portions of the etch protection layer 105 at the top 103 of the protrusions 102. By etching, the etching protection layer 105 can be formed with a notch and the light shielding layer 104 exposed. The etching of the etch protection layer 105 is performed by an etching process. The etching process can be dry etching or wet etching. The dry etching includes, for example, a plasma etching process such as a reactive ion etching (RIE) process or an inductively coupled plasma (ICP); and the wet etching is performed by etching with a suitable etching solution, for example, to form an anisotropic etching.
接著,如圖2E所示,製造方法包含以剩餘之蝕刻保護層105作為遮罩對遮光層104進行蝕刻。藉由對遮光層104之蝕刻,可讓凸狀物102之頂部103露出。遮光層104之蝕刻可藉由乾式蝕刻或溼式蝕刻進行,例如反應式離子蝕刻製程。在本實施例中,凸狀物102之頂部103即為光罩1之透光區。Next, as shown in FIG. 2E, the manufacturing method includes etching the light shielding layer 104 with the remaining etching protection layer 105 as a mask. The top 103 of the protrusion 102 can be exposed by etching the light shielding layer 104. The etching of the light shielding layer 104 can be performed by dry etching or wet etching, such as a reactive ion etching process. In the present embodiment, the top 103 of the protrusion 102 is the light transmitting area of the reticle 1.
圖5為利用本實施例之光罩1進行曝光的示意圖,其中光罩1之圖案係轉移至一具有光阻層21之基板22上,使基板22具有如圖6A所示之光阻結構23a。由於光罩1之凸狀物102直接頂抵光阻層21,因而光罩1與光阻層21能夠緊密貼合,而有效減少光罩1與光阻層21之間隙以及側向曝光範圍,並且能降低光罩1與光阻層21之間的反射率。此外,凸狀物102之側面設有遮光層104,因而凸狀物102之頂部103即為光罩1之透光區。由於上述因素,本實施例之光罩1能製造出高深寬比之光阻結構23a,於此光阻係以正光阻為例。本實施例之光罩1亦能製造出高深寬比之光阻結構23b,如圖6B所示,於此光阻係以負光阻為例。此外,由於頂部103沒有設置遮光層104,而使光罩1沾上光阻層21之光阻的區域大大減少,並且蝕刻保護層105亦可避免遮光層104與光阻層21接觸,進而延長光罩1的使用壽命。5 is a schematic view showing exposure by the reticle 1 of the present embodiment, wherein the pattern of the reticle 1 is transferred onto a substrate 22 having a photoresist layer 21, so that the substrate 22 has a photoresist structure 23a as shown in FIG. 6A. . Since the protrusion 102 of the reticle 1 directly abuts against the photoresist layer 21, the reticle 1 and the photoresist layer 21 can be closely adhered, thereby effectively reducing the gap between the reticle 1 and the photoresist layer 21 and the lateral exposure range. And the reflectance between the photomask 1 and the photoresist layer 21 can be reduced. In addition, the side surface of the protrusion 102 is provided with a light shielding layer 104, so that the top 103 of the protrusion 102 is the light transmission area of the mask 1. Due to the above factors, the photomask 1 of the present embodiment can produce a high aspect ratio photoresist structure 23a, and the photoresist is exemplified by a positive photoresist. The photomask 1 of the present embodiment can also produce a high aspect ratio photoresist structure 23b, as shown in FIG. 6B, where the photoresist is exemplified by a negative photoresist. In addition, since the light shielding layer 104 is not disposed on the top portion 103, the area where the photoresist 1 is adhered to the photoresist layer 21 is greatly reduced, and the etching protection layer 105 can also prevent the light shielding layer 104 from contacting the photoresist layer 21, thereby extending The service life of the mask 1.
在本實施例中,凸狀物102之頂部103可具有多種變化態樣,例如頂部103的頂面可為弧形、鋸齒狀或其他幾何形狀。圖7至圖9分別為凸狀物102之頂部103具有弧形面與鋸齒面的示意圖,凸狀物102之形狀可依曝光需求而設計。In this embodiment, the top portion 103 of the protrusion 102 can have a variety of variations, for example, the top surface of the top portion 103 can be curved, serrated, or other geometric shape. 7 to 9 are schematic views of the top portion 103 of the protrusion 102 having a curved surface and a sawtooth surface, and the shape of the protrusion 102 can be designed according to exposure requirements.
另外,為得到圖7至圖9所示之光罩1,製造方法可在提供基板之步驟中(圖2A),使凸狀物102之頂部103之頂面經過表面處理而得到弧形、鋸齒狀或其他幾何形狀。或者,在製成光罩1之後(圖2E),製造方法更包含對凸狀物102之頂部103進行表面處理而使其具有弧形、鋸齒狀或其他幾何形狀。In addition, in order to obtain the reticle 1 shown in FIGS. 7 to 9, the manufacturing method may be such that in the step of providing the substrate (FIG. 2A), the top surface of the top portion 103 of the protrusion 102 is subjected to surface treatment to obtain an arc shape and a sawtooth shape. Shape or other geometric shape. Alternatively, after fabrication of the reticle 1 (Fig. 2E), the method of fabrication further includes surface treating the top 103 of the projection 102 to have an arcuate, serrated or other geometric shape.
圖10為本實施例之可撓式光罩1與一彎曲基板31進行曝光的示意圖,可撓式光罩1係以可撓性材料製成,並且可隨著彎曲基板31而彎曲,使得光罩1與基板31緊密貼合,進而降低光罩透光區與光阻層之入射光反射率並縮小光阻層的側向曝光範圍。10 is a schematic view showing exposure of the flexible reticle 1 and a curved substrate 31 of the present embodiment. The flexible reticle 1 is made of a flexible material and can be bent along with the curved substrate 31 to make light. The cover 1 and the substrate 31 are closely adhered to each other, thereby reducing the incident light reflectance of the light-transmitting region of the reticle and the photoresist layer and reducing the lateral exposure range of the photoresist layer.
圖11為本實施例之另一態樣之光罩1a的示意圖。其中,製造方法更包含在遮光層104進行蝕刻後,移除剩餘之蝕刻保護層105。剩餘之蝕刻保護層之移除係藉由乾式蝕刻或溼式蝕刻進行。於此,剩餘的蝕刻保護層105在完成保護遮光層104進行開孔並露出頂部103作為光罩之透光區後移除。Figure 11 is a schematic view of another embodiment of the reticle 1a of the embodiment. Wherein, the manufacturing method further includes removing the remaining etching protection layer 105 after the light shielding layer 104 is etched. The removal of the remaining etch protection layer is performed by dry etching or wet etching. Here, the remaining etch protection layer 105 is removed after completing the protection of the light shielding layer 104 to open the hole and exposing the top portion 103 as a light transmitting region of the reticle.
綜上所述,由本發明之製造方法所製成的光罩,其透光區為基板上凸狀物之頂部,由於頂部為漸縮結構,因而可將微米等級之光罩圖案,轉移至基板之光阻層且使其成為次微米或奈米等級之特徵圖案。In summary, the photomask made by the manufacturing method of the present invention has a light transmitting area which is a top portion of the convex portion on the substrate. Since the top portion has a tapered structure, the micron-sized mask pattern can be transferred to the substrate. The photoresist layer and makes it a characteristic pattern of sub-micron or nanoscale.
由於本發明可不需將傳統光罩圖案縮小至次微米或奈米等級,卻可製作出次微米或奈米等級圖案之光罩來進行使用,也不需使用倍縮微影技術所需的昂貴設備,因而可大幅降低成本。Since the present invention can reduce the conventional mask pattern to the sub-micron or nanometer level, it can be used to produce a sub-micron or nano-scale mask for use without using the expensive equipment required for doubling lithography. Therefore, the cost can be greatly reduced.
此外,由本發明之製造方法所製成的光罩,可搭載於移動載具上進行移動式曝光來達成轉移圖案的多樣化。Further, the photomask produced by the manufacturing method of the present invention can be mounted on a mobile vehicle and subjected to mobile exposure to achieve diversification of the transfer pattern.
此外,由於本發明光罩之凸狀物係接觸光阻層,且凸狀物之頂部無設置遮光層,因而可減少遮光層與光阻層接觸的面積,而延長光罩之使用壽命。In addition, since the convex shape of the photomask of the present invention contacts the photoresist layer, and the light shielding layer is not disposed on the top of the convex material, the area of contact between the light shielding layer and the photoresist layer can be reduced, and the service life of the photomask can be prolonged.
此外,由於凸狀物之頂部直接頂抵光阻層,因而光罩與光阻層能夠緊密貼合,而有效減少光罩與光阻層之間隙,進而減少兩者之間的光反射率並可縮小光阻層的側向曝光範圍,而能製造出高深寬比的光阻結構。並且若光罩使用可撓性材料製成,則可撓式光罩使光罩與光阻層更為緊密貼合,使得曝光後所轉移的特徵圖案之尺寸誤差優於一般的接觸式光學微影技術。並且可撓式光罩可使光罩的透光區與光阻層緊密接觸,進而降低一次性大面積、均勻且一致性曝光的困難度。In addition, since the top of the protrusion directly abuts against the photoresist layer, the photomask and the photoresist layer can be closely adhered to each other, thereby effectively reducing the gap between the photomask and the photoresist layer, thereby reducing the light reflectance between the two. The lateral exposure range of the photoresist layer can be reduced, and a high aspect ratio photoresist structure can be fabricated. And if the photomask is made of a flexible material, the flexible mask makes the photomask and the photoresist layer more closely adhered, so that the dimensional error of the characteristic pattern transferred after the exposure is superior to the general contact optical micro Shadow technology. Moreover, the flexible reticle can make the light transmissive area of the reticle in close contact with the photoresist layer, thereby reducing the difficulty of one-time large area, uniform and consistent exposure.
此外,由於本發明光罩之凸狀物的頂部為漸縮結構,因而可對曝光入射的光線產生聚焦效果,而減少入射光徑的擴散範圍。In addition, since the top of the convex portion of the reticle of the present invention has a tapered structure, it is possible to produce a focusing effect on the incident light, and to reduce the diffusion range of the incident optical path.
此外,本發明光罩之凸狀物的頂部為光罩之透光區。藉由控制頂部無遮光層的範圍大小,可調整曝光後得到之特徵圖案的尺寸。In addition, the top of the convex portion of the reticle of the present invention is a light transmitting region of the reticle. By controlling the size of the top surface without the light shielding layer, the size of the feature pattern obtained after exposure can be adjusted.
此外,本發明之剩餘的蝕刻保護層更可作為遮光層之保護層,避免遮光層與光阻層接觸磨損或污染,而延長光罩之使用壽命,同時減少清潔的次數。In addition, the remaining etch protection layer of the present invention can be used as a protective layer of the light shielding layer to prevent wear or contamination of the light shielding layer and the photoresist layer, thereby prolonging the service life of the reticle while reducing the number of cleanings.
以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims.
1、1a...光罩1, 1a. . . Mask
101、22...基板101, 22. . . Substrate
102...凸狀物102. . . Convex
103...頂部103. . . top
104...遮光層104. . . Shading layer
105...蝕刻保護層105. . . Etched protective layer
21...光阻層twenty one. . . Photoresist layer
23a、23b...光阻結構23a, 23b. . . Photoresist structure
31...彎曲基板31. . . Curved substrate
S01~S05...光罩之製造方法的步驟S01~S05. . . Steps of manufacturing the mask
圖1為本發明較佳實施例之一種光罩之製造方法的步驟示意圖;1 is a schematic view showing the steps of a method for manufacturing a photomask according to a preferred embodiment of the present invention;
圖2A至圖2E為圖1之製造方法的流程示意圖;2A to 2E are schematic flow charts of the manufacturing method of FIG. 1;
圖3與圖4為本發明較佳實施例之光罩之製造方法中,基板與凸狀物具有不同態樣的示意圖;3 and FIG. 4 are schematic diagrams showing different manners of a substrate and a protrusion in a method of manufacturing a reticle according to a preferred embodiment of the present invention;
圖5為利用本發明較佳實施例之光罩之製造方法所得到之光罩進行曝光的示意圖;5 is a schematic view showing exposure of a photomask obtained by a method for manufacturing a photomask according to a preferred embodiment of the present invention;
圖6A與圖6B為利用圖5之光罩進行曝光所得到之光阻結構的示意圖;6A and FIG. 6B are schematic diagrams showing a photoresist structure obtained by performing exposure using the photomask of FIG. 5;
圖7至圖9為本發明較佳實施例之一種光罩具有不同態樣之凸狀部的示意圖;7 to FIG. 9 are schematic diagrams showing a convex portion of a reticle having different aspects according to a preferred embodiment of the present invention;
圖10為本發明較佳實施例之可撓式光罩與一彎曲基板進行曝光的示意圖;以及10 is a schematic view showing exposure of a flexible photomask and a curved substrate according to a preferred embodiment of the present invention;
圖11為本發明較佳實施例之另一態樣之光罩的示意圖。Figure 11 is a schematic illustration of another embodiment of a reticle in accordance with a preferred embodiment of the present invention.
S01~S05...光罩之製造方法的步驟S01~S05. . . Steps of manufacturing the mask
Claims (11)
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