TWI477639B - Preparation of carbon nanotubes and carbon nanotubes and their carbon nanotubes and their applications - Google Patents

Preparation of carbon nanotubes and carbon nanotubes and their carbon nanotubes and their applications Download PDF

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TWI477639B
TWI477639B TW101117330A TW101117330A TWI477639B TW I477639 B TWI477639 B TW I477639B TW 101117330 A TW101117330 A TW 101117330A TW 101117330 A TW101117330 A TW 101117330A TW I477639 B TWI477639 B TW I477639B
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carbon nanotubes
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TW201348490A (en
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Chuen Chang Lin
Yu Sheng Ho
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Nat Yunlin University If Science And Techn
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製備奈米碳管之方法以及奈米碳管及其奈米碳管電極與應用Method for preparing carbon nanotubes and carbon nanotubes and carbon nanotube electrodes thereof and application thereof

本發明係關於一種製備奈米碳管之方法,尤指一種藉由射頻氫氣電漿前處理催化劑、調控製備奈米碳管之溫度、氨氣以及氫氣體積流量以製備垂直排列、高密集度與低非晶質碳之奈米碳管之方法。本發明亦關於一種奈米碳管。本發明另關於一種奈米碳管電極。本發明另關於一種具有前述奈米碳管電極之電化學電容器。本發明另關於一種具有前述奈米碳管電極之電池。The invention relates to a method for preparing a carbon nanotube, in particular to a method for pretreating a catalyst by radio frequency hydrogen plasma, regulating the temperature of preparing a carbon nanotube, ammonia gas and a volume flow of hydrogen to prepare a vertical alignment, a high concentration and A method of low amorphous carbon carbon nanotubes. The invention also relates to a carbon nanotube. The invention further relates to a carbon nanotube electrode. The invention further relates to an electrochemical capacitor having the aforementioned carbon nanotube electrode. The invention further relates to a battery having the aforementioned carbon nanotube electrode.

相較於電池及電容器,電化學電容器(electrochemical capacitor)係一種具有高功率密度、循環壽命長以及高能量密度之充放電裝置,因此經常應用在能量輸出的裝置、電動車的煞車系統及加速工具、筆記型電腦與燃料電池之起始功率等。依據能源儲存之形式,電化學電容器可分為兩種類型,一種係為電雙層電容器(electric double layer capacitors,EDLC),另一種係擬電容器(pseudo-capacitors)。其中電雙層電容器之電容係藉由電極與電解質界面間因庫侖靜電力所造成電荷分離的現象以達儲電能的目的;擬電容器之電容主要是利用電極表面進行快速且連續的氧化還原反應來儲存電能。Compared with batteries and capacitors, electrochemical capacitors are a type of charging and discharging device with high power density, long cycle life and high energy density. Therefore, they are often used in energy output devices, electric vehicle braking systems and acceleration tools. , the starting power of notebook computers and fuel cells, etc. According to the form of energy storage, electrochemical capacitors can be divided into two types, one is electric double layer capacitors (EDLC), and the other is pseudo-capacitors. The capacitance of the electric double-layer capacitor is the purpose of storing electric energy by the phenomenon of charge separation caused by Coulomb electrostatic force between the electrode and the electrolyte interface; the capacitance of the pseudo-capacitor mainly uses the electrode surface for rapid and continuous redox reaction. Store electrical energy.

近年來研究顯示,由於奈米碳管(carbon nanotubes,CNTs)具有較高的可接近表面積(accessible surface area)(例如奈米碳管的奈米級尺寸、中空結構、低比例之微孔結構)、低電阻以及高穩定性等獨特的特性,故奈米碳管相當適合 作為電化學電容器的電極材料。Recent studies have shown that carbon nanotubes (CNTs) have a high accessible surface area (for example, nanometer size of carbon nanotubes, hollow structure, low proportion of microporous structure). Unique characteristics such as low resistance and high stability, so the carbon nanotubes are quite suitable As an electrode material for electrochemical capacitors.

就目前現有技術而言,藉由觸媒化學氣相沉積法(catalytic chemical vapor deposition,CCVD)生長奈米碳管之製程中,通常係以過渡金屬元素(transition metals)之鐵(Fe)、鈷(Co)以及鎳(Ni)作為催化劑,並通入甲烷(CH4 )及乙炔(C2 H2 )等氣體作為成長奈米碳管時所需的碳源;其中由於催化劑未達到適當溫度、碳源供應不足以及奈米碳管成長速率未能平衡等缺點,導致奈米碳管內部產生五角碳環或七角碳環而使得奈米碳管呈現彎曲狀、低密集度與高非晶質碳,進而造成其比電容值下降,亦影響其循環使用壽命。In the current state of the art, in the process of growing carbon nanotubes by catalytic chemical vapor deposition (CCVD), iron (Fe) and cobalt are usually used as transition metals. (Co) and nickel (Ni) as catalysts, and a gas such as methane (CH 4 ) and acetylene (C 2 H 2 ) is introduced as a carbon source required for growing a carbon nanotube; since the catalyst does not reach an appropriate temperature, The shortage of carbon source and the failure of the growth rate of carbon nanotubes have resulted in the formation of a pentagonal or heptacyclic carbon ring inside the carbon nanotubes, which makes the carbon nanotubes bend, low density and high amorphous. Carbon, which in turn causes a decrease in its specific capacitance, also affects its cycle life.

鑒於現有技術之奈米碳管係彎曲狀、低密集度與高非晶質碳之缺點,故本發明之目的在於提供一種製備奈米碳管之方法,藉由提升奈米碳管之垂直排列度、密集度及平均比表面積與降低非晶質碳,進而提升比電容值與壽命。In view of the disadvantages of the prior art carbon nanotubes being curved, low-density and high-amorphous carbon, the object of the present invention is to provide a method for preparing a carbon nanotube by raising the vertical arrangement of the carbon nanotubes. Degree, intensity and average specific surface area reduce amorphous carbon, which in turn increases specific capacitance and lifetime.

為達上述目的,本發明提供一種製備奈米碳管之方法,其包括:提供一表面具有催化劑/鈦覆蓋之基材(catalyst-Ti-coated substrate);以射頻氫氣電漿(radio frequency hydrogen-plasma)對於該基材進行前處理(pretreat)後,再藉由熱化學氣相沉積法(thermal chemical vapor deposition,TCVD)於一加熱溫度,並通入氨氣以及氫氣,而直接形成一具有垂直排列、高密集度與低非晶質碳之奈米碳管(carbon nanotube)。To achieve the above object, the present invention provides a method of preparing a carbon nanotube comprising: providing a catalyst-titanium-coated substrate on a surface; radio frequency hydrogen-plasma After pretreating the substrate, a thermal chemical vapor deposition (TCVD) is applied to a heating temperature, and ammonia gas and hydrogen gas are introduced to form a vertical Arranged, high-density and low-amorphous carbon carbon nanotubes.

依據本發明,「催化劑」如此處所指係任何適宜生長 奈米碳管之過渡金屬;較佳的,所述之催化劑係鈷(Co)。According to the invention, "catalyst" as used herein is any suitable growth A transition metal of a carbon nanotube; preferably, the catalyst is cobalt (Co).

較佳的,所述之基材可以是任何適用作為支撐催化劑以生長奈米碳管結構的材料,其包括,但不限於石墨(graphite)及矽(silicon)。Preferably, the substrate may be any material suitable for supporting a catalyst to grow a carbon nanotube structure, including, but not limited to, graphite and silicon.

依據本發明,「射頻氫氣電漿」如此處所指係用於促使催化劑形成奈米顆粒及減少催化劑表面之金屬氧化物;以下列反應條件為例:將基材置於反應腔室[頻率為13.56兆赫(mega hertz,MHz)、最大功率為100瓦(W)之射頻電漿],將反應腔室之背景壓力抽至7x10-6 托爾(torr)、氫氣體積流量為每分鐘50標準立方公分(sccm,standard cubic centimeter per minute,cm3 /min)、電漿壓力控制為5 torr、電漿功率為50 W、基材溫度為500℃、時間為8分鐘(min)。In accordance with the present invention, "radio frequency hydrogen plasma" as used herein is used to promote the formation of nanoparticles of a catalyst and to reduce metal oxides on the surface of the catalyst; for example, the following reaction conditions are employed: placing the substrate in a reaction chamber [frequency 13.56 Megahertz (MHz), a radio frequency plasma with a maximum power of 100 watts (W), pumping the background pressure of the reaction chamber to 7x10 -6 torr, and the volumetric flow rate of hydrogen is 50 standard cubic centimeters per minute. (sccm, standard cubic centimeter per minute, cm 3 /min), plasma pressure control of 5 torr, plasma power of 50 W, substrate temperature of 500 ° C, and time of 8 minutes (min).

依據本發明,「熱化學氣相沉積法」如此處所使用係指將催化劑/鈦覆蓋之基材置於反應腔室中,通入碳源氣體例如乙炔(C2 H2 )及氬氣(Ar),並藉由化學反應生成奈米碳管;以下列反應條件為例:將前述之基材置於高溫爐加熱,並通入50 cm3 /min之乙炔及100 cm3 /min之氬氣(Ar),並歷經20 min。According to the present invention, "thermal chemical vapor deposition" as used herein means placing a catalyst/titanium-covered substrate in a reaction chamber, and introducing a carbon source gas such as acetylene (C 2 H 2 ) and argon (Ar). And generating a carbon nanotube by a chemical reaction; taking the following reaction conditions as an example: the substrate is heated in a high temperature furnace, and acetylene of 50 cm 3 /min and argon of 100 cm 3 /min are introduced. (Ar) and after 20 minutes.

較佳的,所述之加熱溫度係介於700℃至800℃。Preferably, the heating temperature is between 700 ° C and 800 ° C.

較佳的,所述之氨氣之體積流量係介於0 cm3 /min至60 cm3 /min。Preferably, the volume flow rate of the ammonia gas is between 0 cm 3 /min and 60 cm 3 /min.

較佳的,所述之氫氣之體積流量係介於0 cm3 /min至21 cm3 /min。Preferably, the volume flow rate of the hydrogen gas is between 0 cm 3 /min and 21 cm 3 /min.

依據本發明,「垂直排列」如此處所使用係指以基材具有一水平面,奈米碳管大致垂直生長於基材之水平面方 向延伸生長,基於碳源與自組合之特性,所形成之奈米碳管之延伸方向可稍有不同,較佳的,其中各奈米碳管軸心延伸方向與基材的水平表面呈約85°至95°;更佳的,約88°至93°;又更佳的約89°至91°。In accordance with the present invention, "vertical alignment" as used herein means that the substrate has a horizontal plane and the carbon nanotubes are grown substantially perpendicular to the horizontal plane of the substrate. The extension of the growth, based on the characteristics of the carbon source and the self-combination, the direction in which the formed carbon nanotubes extend may be slightly different. Preferably, the direction in which the axes of the respective carbon nanotubes extend is about the horizontal surface of the substrate. 85° to 95°; more preferably, about 88° to 93°; still more preferably about 89° to 91°.

依據本發明,「高密集度」如此處所使用係指奈米碳管之比表面積係介於2.36×1016 平方奈米/平方公分(nm2 /cm2 )至2.67×1016 nm2 /cm2 之間。According to the present invention, "highly dense" as used herein means that the specific surface area of the carbon nanotubes is between 2.36 x 10 16 square nanometers per square centimeter (nm 2 /cm 2 ) to 2.67 × 10 16 nm 2 /cm. Between 2 .

依據本發明,「低非晶質碳」如此處所使用係指石墨化程度(IG /ID 值)介於0.89至0.95之間。In accordance with the present invention, "low amorphous carbon" as used herein refers to a degree of graphitization (I G /I D value) of between 0.89 and 0.95.

本發明又提供一種奈米碳管,其中包含如前述之方法所製得,且該奈米碳管之軸心延伸方向與基材的水平表面呈約85°至95°之垂直排列;該奈米碳管之比表面積係介於2.36×1016 nm2 /cm2 至2.67×1016 nm2 /cm2 之間;該奈米碳管之石墨化程度(IG /ID 值)介於0.89至0.95之間。The invention further provides a carbon nanotube comprising the method as described above, wherein the axial direction of the carbon nanotube extends perpendicularly to a horizontal surface of the substrate of about 85° to 95°; The specific surface area of the carbon nanotubes is between 2.36×10 16 nm 2 /cm 2 and 2.67×10 16 nm 2 /cm 2 ; the degree of graphitization of the carbon nanotubes (I G /I D value) is between Between 0.89 and 0.95.

本發明再提供一種奈米碳管電極,其中包含如前述之奈米碳管。The present invention further provides a carbon nanotube electrode comprising a carbon nanotube as described above.

本發明更提供一種電化學電容器,其係包括如前所述之奈米碳管電極。The present invention further provides an electrochemical capacitor comprising the carbon nanotube electrode as described above.

本發明更提供一種電池,其係包括如前所述之奈米碳管電極。The present invention further provides a battery comprising the carbon nanotube electrode as described above.

本發明相較於現有技術,具有下列優點:Compared with the prior art, the invention has the following advantages:

1.本發明係以鈦作為阻障層(barrier layer),可用以防止矽化物產生,且該鈦阻障層可增加奈米碳管於基材上的附著性。1. The present invention uses titanium as a barrier layer to prevent the formation of telluride, and the titanium barrier layer can increase the adhesion of the carbon nanotubes to the substrate.

2.本發明藉由氫電漿前處理催化劑後,該氫電漿可還原 催化劑表面氧化物,而使其保有催化劑之活性,且可使催化劑形成奈米顆粒狀的結構,可促使所生長之奈米碳管電極具有較大的密集度與平均比表面積,亦可提升其比電容值。2. The hydrogen plasma can be reduced by the pretreatment of the catalyst by hydrogen plasma in the present invention. The surface oxide of the catalyst keeps the activity of the catalyst, and the catalyst can form a nano-grain structure, which can promote the growth of the carbon nanotube electrode with a large density and an average specific surface area, and can also enhance its Specific capacitance value.

3.本發明藉由調控製備奈米碳管之溫度,可提升觸媒之活化能以及碳原子(乙炔)裂解速率,進而提升其比電容值與壽命。3. The invention can improve the activation energy of the catalyst and the decomposition rate of carbon atoms (acetylene) by regulating the temperature of the preparation of the carbon nanotubes, thereby increasing the specific capacitance value and the lifetime.

4.本發明於熱化學氣相沉積法生長奈米碳管電極之製程中,通入氨氣與氫氣可抑制非晶質碳之生成,通入氨氣與氫氣亦能幫助生長具有垂直排列之奈米碳管電極,使電解質離子(electrolyte ion)較易滲透至奈米碳管底部之潛在電活性區位置(potentially electroactive site),可提高比電容值與壽命,且本製程易於放大,亦較具商業生產潛力。4. In the process of growing a carbon nanotube electrode by thermal chemical vapor deposition in the invention, the introduction of ammonia gas and hydrogen gas can inhibit the formation of amorphous carbon, and the introduction of ammonia gas and hydrogen gas can also help the growth to have vertical alignment. The carbon nanotube electrode makes the electrolyte ion easily penetrate into the potential electroactive site at the bottom of the carbon nanotube, which can increase the specific capacitance value and the lifetime, and the process is easy to enlarge and compare. With commercial production potential.

5.本發明係將奈米碳管直接成長於基材上,其製程不需進行奈米碳管萃取、不需再利用溶劑溶解奈米碳管、不需進一步將奈米碳管沉積於基材上或使用黏著劑將奈米碳管黏於基材上,而使集電器與奈米碳管之間的接觸阻力增加,進而降低其電化學特性。5. The invention directly grows the carbon nanotubes on the substrate, the process does not need to carry out the carbon nanotube extraction, does not need to use the solvent to dissolve the carbon nanotubes, and does not need to further deposit the carbon nanotubes on the base. The carbon nanotubes are adhered to the substrate by using an adhesive or an adhesive to increase the contact resistance between the current collector and the carbon nanotubes, thereby lowering the electrochemical characteristics.

以下針對本發明的技術內容,藉由圖式及較佳實施例,進一步闡述本發明為達上述目的所使用的技術手段。The technical means used by the present invention to achieve the above objects will be further clarified by the following description of the technical contents of the present invention.

材料及方法Materials and methods

1.材料Material

鈦靶材之純度係99.995%,購自於美國SCM,Inc公司;鈷靶材之純度係99.9%,購自於美國SCM,Inc公司;乙炔 之純度係99.999%,購自於一展氣體公司;氬氣之純度係99.999%,購自於冷研氣體公司;氨氣之純度係99.999%,購自於冷研氣體公司;氫氣之純度係99.999%,購自於冷研氣體公司;恆電位儀之型號為CHI 608B,購自於美國CH Instrument公司;恆溫循環水槽之型號為G10,購自於DENG YNG公司;場效發射掃描式電子顯微鏡(field-emission-scanning electron microscopy,FE-SEM)之型號為JSM-6700F,購自於日本JEOL公司;穿透電子顯微鏡(transmission electron microscopy,TEM)之型號為JSM-2010,購自於日本JEOL公司;顯微拉曼光譜儀(microscopes Raman spectrometer)之型號為inVia,購自於英國Renishaw公司。The purity of the titanium target is 99.995%, purchased from SCM, Inc., USA; the purity of the cobalt target is 99.9%, purchased from SCM, Inc., USA; acetylene The purity is 99.999%, purchased from Yizhan Gas Company; the purity of argon is 99.999%, purchased from Cold Research Gas Company; the purity of ammonia is 99.999%, purchased from Cold Research Gas Company; the purity of hydrogen 99.999%, purchased from Cold Research Gas Company; model of potentiostat is CHI 608B, purchased from CH Instrument Company of the United States; model of constant temperature circulating water tank is G10, purchased from DENG YNG Company; field emission scanning electron microscope (field-emission-scanning electron microscopy, FE-SEM) model JSM-6700F, purchased from Japan JEOL company; transmission electron microscopy (TEM) model JSM-2010, purchased from Japan JEOL The company; the microscopes Raman spectrometer is model inVia and is available from Renishaw, UK.

2.方法2. Method

(1)電化學之充放電測試分析(1) Electrochemical charge and discharge test analysis

使用銀/氯化銀(Ag/AgCl)電極作為參考電極,並使用鉑(Pt)作為對應電極以及各樣本作為工作電極,而形成三極式電容器(three-electrode cell)的形式,並以恆電位儀進行循環伏安法測試。在進行測試前,所使用的工作電極、參考電極及對應電極置於一溶液中,並使用氮氣(N2 )對該溶液進行除氣(degas)。將該溶液置於恆溫循環水槽中,並使該溶液的溫度維持在25℃。此測試係於一具有0.5莫耳濃度(M)硫酸(sulfur acid,H2 SO4 )水溶液中,掃描速率為100毫伏特/秒(mVs-1 ),所施加的電壓值為0伏特(V)至1伏特,並將所測試出的數值標準化為1克(g)的奈米碳管電極所具有的電容;再以循環數對比電容來作圖以分析循環壽命,並藉由 循環數對比電容作圖以比較於不同條件所生長之奈米碳管作為電極對於電容量與壽命的影響。A silver/silver chloride (Ag/AgCl) electrode is used as a reference electrode, and platinum (Pt) is used as a counter electrode and each sample is used as a working electrode to form a three-electrode cell. The potentiometer was tested by cyclic voltammetry. Before the test, the working electrode, the reference electrode and the corresponding electrode were placed in a solution, and the solution was degassed using nitrogen (N 2 ). The solution was placed in a constant temperature circulating water bath and the temperature of the solution was maintained at 25 °C. The test was carried out in an aqueous solution of 0.5 molar (M) sulfuric acid (H 2 SO 4 ) at a scan rate of 100 millivolts per second (mVs -1 ) and applied at a voltage of 0 volts (V). ) to 1 volt, and normalize the measured value to the capacitance of a 1 gram (g) carbon nanotube electrode; then plot the cycle number versus capacitance to analyze the cycle life and compare the cycle number Capacitance plotting compares the effect of carbon nanotubes grown under different conditions on the capacitance and lifetime of the electrodes.

(2)場效發射掃描式電子顯微鏡之觀察(2) Observation of field effect emission scanning electron microscope

將各樣本置於場效發射掃描式電子顯微鏡下,以放大倍率10,000倍至100,000倍觀察分析。Each sample was placed under a field emission scanning electron microscope to observe the analysis at a magnification of 10,000 times to 100,000 times.

(3)穿透電子顯微鏡之觀察(3) Observation by penetrating electron microscope

將各樣本置於穿透電子顯微鏡下,以放大倍率40,000倍至80,000倍觀察分析。Each sample was placed under a transmission electron microscope, and the analysis was observed at a magnification of 40,000 to 80,000 times.

(4)顯微拉曼光譜儀之測試分析(4) Test and analysis of micro Raman spectrometer

可由顯微拉曼光譜儀來檢測奈米碳管電極之石墨化程度(IG /ID 值),並利用其來判定奈米碳管電極之壽命。The degree of graphitization (I G /I D value) of the carbon nanotube electrode can be detected by a micro-Raman spectrometer and used to determine the life of the carbon nanotube electrode.

製備例1:基材的製備Preparation Example 1: Preparation of Substrate

準備一矽箔(silicon foil),其體積為1x1x0.05立方公分(cm3 )(或1x2x0.05立方公分)。將矽箔浸於含有去離子水(de-ionized water)與丙酮之溶液中,去離子水與丙酮之體積比為1:1;再透過超音波震盪15 min以脫脂(degreasing),接著,再置於烘箱中,於50℃的溫度環境下乾燥,以使該經脫脂之矽箔的重量達到恆定。A silicon foil having a volume of 1 x 1 x 0.05 cubic centimeters (cm 3 ) (or 1 x 2 x 0.05 cubic centimeters) was prepared. The ruthenium foil is immersed in a solution containing de-ionized water and acetone, and the volume ratio of deionized water to acetone is 1:1; and then oscillated by ultrasonic for 15 min for degreasing, and then, It was placed in an oven and dried at a temperature of 50 ° C to make the weight of the degreased enamel foil constant.

再將一尺寸為3.5英吋圓盤之鈦靶材置於與前述之矽箔之上,且距離為10公分(cm)的位置,並於濺鍍背景壓力為7×10-6 torr的真空環境中,濺鍍時間為1.5小時,濺鍍功率為60 W、濺鍍壓力為20毫托爾(mtorr)、氬氣體積流量為25 cm3 /min,利用射頻磁控濺鍍法(radio frequency magnetron sputtering)將鈦沉積於該矽箔的表面,以形成一表面含有鈦之矽箔,且其濺鍍過程中,不加熱基材。A titanium target of 3.5-inch disk was placed on top of the above-mentioned tantalum foil at a distance of 10 cm (cm) and a vacuum of 7 × 10 -6 torr was applied to the sputtering background. In the environment, the sputtering time is 1.5 hours, the sputtering power is 60 W, the sputtering pressure is 20 mTorr, and the argon volume flow is 25 cm 3 /min. Using radio frequency magnetron sputtering (radio frequency) Magnetron sputtering) deposits titanium on the surface of the tantalum foil to form a tantalum foil containing titanium on the surface, and does not heat the substrate during sputtering.

接著,再將一尺寸為3.5英吋圓盤之鈷靶材置於與前述之表面含有鈦之矽箔之上,且距離為10 cm,並於濺鍍背景壓力為7×10-6 torr的真空環境中,濺鍍時間為10 min,濺鍍功率為50 W、濺鍍壓力為5 mtorr、氬氣體積流量為25 cm3 /min,利用射頻磁控濺鍍法將鈷沉積於該表面含有鈦之矽箔之表面,亦即鈦係位於鈷與矽箔表面之間,以形成一表面具有鈷/鈦覆蓋之基材,其中鈷係作為催化劑。Next, a 3.5-inch-diameter cobalt target was placed on the surface of the tantalum foil containing titanium on the surface, and the distance was 10 cm, and the sputtering background pressure was 7×10 -6 torr. In a vacuum environment, the sputtering time is 10 min, the sputtering power is 50 W, the sputtering pressure is 5 mtorr, and the argon volume flow rate is 25 cm 3 /min. The cobalt is deposited on the surface by RF magnetron sputtering. The surface of the tantalum foil of titanium, that is, the titanium system, is located between the surface of the cobalt and the tantalum foil to form a substrate having a surface covered with cobalt/titanium, wherein cobalt is used as a catalyst.

製備例2:利用氫電漿對鈷進行前處理Preparation Example 2: Pretreatment of Cobalt with Hydrogen Plasma

將實施例1所得之表面具有鈷/鈦覆蓋之基材置於反應腔室(反應條件:頻率為13.56 MHz、最大功率為100 W之射頻電漿),將反應腔室之背景壓力抽至7x10-6 torr、氫氣體積流量為50 cm3 /min、電漿壓力控制為5 torr、電漿功率為50 W、基材溫度為500℃、時間為8 min。The substrate with the cobalt/titanium coating on the surface obtained in Example 1 was placed in a reaction chamber (reaction conditions: radio frequency plasma with a frequency of 13.56 MHz and a maximum power of 100 W), and the background pressure of the reaction chamber was pumped to 7×10. -6 torr, hydrogen volume flow rate is 50 cm 3 /min, plasma pressure is controlled to 5 torr, plasma power is 50 W, substrate temperature is 500 ° C, and time is 8 min.

製備例3:利用熱化學氣相沉積法(thermal chemical vapor deposition,TCVD)製備奈米碳管電極(carbon nanotube electrode)Preparation Example 3: Preparation of a Carbon Nanotube Electrode by Thermal Chemical Vapor Deposition (TCVD)

本實施例係利用熱化學氣相沉積法於各種不同條件於表面具有鈷/鈦覆蓋之基材上生長奈米碳管。In this embodiment, a carbon nanotube is grown on a substrate having a cobalt/titanium coating on the surface by thermal chemical vapor deposition under various conditions.

樣本1:將製備例1之表面具有鈷/鈦覆蓋的基材置於石英舟(quartz boat)中,並將石英舟置入高溫爐之石英管(quartz tube)中加熱至700℃,並通入乙炔(C2 H2 )及氬氣(Ar),其中乙炔體積流量係50 cm3 /min、氬氣體積流量係100 cm3 /min;並通入50 cm3 /min之氨氣體積流量歷經20 min,使奈米碳管直接成長於基材上,即可獲得一奈米碳管於以下內文中均以「樣本1」表示之;為增加基材之導電性, 以少量電傳導膠(electrically conductive cement)將具有奈米碳管之鈷/鈦覆蓋的基材固著於鋁電流集電器(aluminum current collector),即可獲得一奈米碳管電極(carbon nanotube electrode)。Sample 1: The substrate having the cobalt/titanium coating on the surface of Preparation Example 1 was placed in a quartz boat, and the quartz boat was placed in a quartz tube of a high temperature furnace and heated to 700 ° C. Acetylene (C 2 H 2 ) and argon (Ar), wherein the acetylene volume flow rate is 50 cm 3 /min, the argon volume flow rate is 100 cm 3 /min; and the ammonia gas volume flow rate of 50 cm 3 /min is introduced. After 20 minutes, the carbon nanotubes are directly grown on the substrate, and a carbon nanotube can be obtained as shown in "Sample 1" in the following text; to increase the conductivity of the substrate, a small amount of electrically conductive adhesive (electrically conductive cement) A carbon nanotube electrode is obtained by fixing a cobalt/titanium coated substrate having a carbon nanotube to an aluminum current collector.

樣本2:將製備例1之表面具有鈷/鈦覆蓋的基材置於石英舟後,並將石英舟置入高溫爐之石英管中加熱至750℃,其餘製備步驟均與樣本1的製備步驟相同,所獲得的奈米碳管於以下內文中均以「樣本2」表示之。Sample 2: The substrate with the cobalt/titanium coating on the surface of Preparation Example 1 was placed in a quartz boat, and the quartz boat was placed in a quartz tube of a high temperature furnace and heated to 750 ° C. The remaining preparation steps were the same as the preparation steps of the sample 1. In the same manner, the obtained carbon nanotubes are represented by "sample 2" in the following texts.

樣本3:將製備例1之表面具有鈷/鈦覆蓋的基材置於石英舟後,並將石英舟置入高溫爐之石英管中加熱至800℃,其餘製備步驟均與樣本1的製備步驟相同,所獲得的奈米碳管於以下內文中均以「樣本3」表示之。Sample 3: The substrate with the cobalt/titanium coating on the surface of Preparation Example 1 was placed in a quartz boat, and the quartz boat was placed in a quartz tube of a high temperature furnace and heated to 800 ° C. The remaining preparation steps were the same as the preparation steps of the sample 1. In the same manner, the obtained carbon nanotubes are represented by "sample 3" in the following texts.

樣本4:將製備例1之表面具有鈷/鈦覆蓋的基材置於石英舟後,以高溫爐加熱至750℃,除不通入氨氣之外,其餘製備步驟均與樣本1的製備步驟相同,所獲得的奈米碳管於以下內文中均以「樣本4」表示之。Sample 4: The substrate having the cobalt/titanium coating on the surface of Preparation Example 1 was placed in a quartz boat and heated to 750 ° C in a high temperature furnace. The preparation steps were the same as those in the sample 1 except that ammonia gas was not introduced. The obtained carbon nanotubes are represented by "Sample 4" in the following texts.

樣本5:將製備例1之表面具有鈷/鈦覆蓋的基材置於石英舟後,以高溫爐加熱至750℃,並通入40 cm3 /min之氨氣體積流量,其餘製備步驟均與樣本1的製備步驟相同,所獲得的奈米碳管於以下內文中均以「樣本5」表示之。Sample 5: The substrate with the cobalt/titanium coating on the surface of Preparation Example 1 was placed in a quartz boat, heated to 750 ° C in a high temperature furnace, and a volume flow rate of ammonia of 40 cm 3 /min was introduced, and the remaining preparation steps were performed. The preparation steps of the sample 1 were the same, and the obtained carbon nanotubes were represented by "sample 5" in the following text.

樣本6:將製備例1之表面具有鈷/鈦的基材置於石英舟後,以高溫爐加熱至750℃,並通入60 cm3 /min之氨氣體積流量,其餘製備步驟均與樣本1的製備步驟相同,所獲得的奈米碳管於以下內文中均以「樣本6」表示之。Sample 6: The substrate with cobalt/titanium on the surface of Preparation Example 1 was placed in a quartz boat, heated to 750 ° C in a high temperature furnace, and a volume flow of ammonia gas of 60 cm 3 /min was introduced, and the remaining preparation steps were all with the sample. The preparation steps of 1 are the same, and the obtained carbon nanotubes are represented by "sample 6" in the following texts.

樣本7:將製備例2之表面具有鈷/鈦覆蓋的基材置於 石英舟後,以高溫爐加熱至750℃,其餘製備步驟均與樣本1的製備步驟相同,所獲得的奈米碳管於以下內文中均以「樣本7」表示之。Sample 7: A substrate having a cobalt/titanium coating on the surface of Preparation Example 2 was placed After the quartz boat was heated to 750 ° C in a high temperature furnace, the remaining preparation steps were the same as those in the preparation of Sample 1, and the obtained carbon nanotubes were represented by "Sample 7" in the following text.

樣本8:將製備例2之表面具有鈷/鈦覆蓋的基材置於石英舟後,以高溫爐加熱至750℃,並通入11 cm3 /min之氫氣體積流量,其餘製備步驟均與樣本1的製備步驟相同,所獲得的奈米碳管於以下內文中均以「樣本8」表示之。Sample 8: The substrate with the cobalt/titanium coating on the surface of Preparation Example 2 was placed in a quartz boat, heated to 750 ° C in a high temperature furnace, and a volume flow of hydrogen of 11 cm 3 /min was introduced, and the remaining preparation steps were all with the sample. The preparation steps of 1 are the same, and the obtained carbon nanotubes are represented by "Sample 8" in the following text.

樣本9:將製備例2之表面具有鈷/鈦覆蓋的基材置於石英舟後,以高溫爐加熱至750℃,並通入16 cm3 /min之氫氣體積流量,其餘製備步驟均與樣本1的製備步驟相同,所獲得的奈米碳管於以下內文中均以「樣本9」表示之。Sample 9: The substrate with the cobalt/titanium coating on the surface of Preparation Example 2 was placed in a quartz boat, heated to 750 ° C in a high temperature furnace, and a volume flow of hydrogen of 16 cm 3 /min was introduced, and the remaining preparation steps were all with the sample. The preparation steps of 1 are the same, and the obtained carbon nanotubes are represented by "sample 9" in the following texts.

樣本10:將製備例2之表面具有鈷/鈦覆蓋的基材置於石英舟後,以高溫爐加熱至750℃,並通入21 cm3 /min之氫氣體積流量,其餘製備步驟均與樣本1的製備步驟相同,所獲得的奈米碳管於以下內文中均以「樣本10」表示之。Sample 10: The substrate with the cobalt/titanium coating on the surface of Preparation Example 2 was placed in a quartz boat, heated to 750 ° C in a high temperature furnace, and a volume flow of hydrogen of 21 cm 3 /min was introduced, and the remaining preparation steps were all with the sample. The preparation steps of 1 are the same, and the obtained carbon nanotubes are represented by "sample 10" in the following texts.

表1係各樣本於不同條件之生長環境。其中樣本1至樣本3係將氨氣體積流量固定為50 cm3 /min,以比較不同加 熱溫度對於生長奈米碳管之影響;樣本2及樣本4至樣本6係將加熱溫度固定為750℃,以比較不同氨氣體積流量對於生長奈米碳管之影響。Table 1 shows the growth environment of each sample under different conditions. Samples 1 to 3 fixed the ammonia volume flow rate to 50 cm 3 /min to compare the effects of different heating temperatures on the growth of carbon nanotubes; sample 2 and sample 4 to sample 6 fixed the heating temperature to 750 ° C. To compare the effects of different ammonia volume flow rates on the growth of carbon nanotubes.

樣本7至樣本10係將製備例2之表面具有鈷/鈦覆蓋的基材置於石英舟後,將加熱溫度固定為750℃以及氨氣體積流量固定為50 cm3 /min,以比較不同氫氣體積流量對於生長奈米碳管之影響。Samples 7 to 10 were prepared by placing a substrate having a cobalt/titanium coating on the surface of Preparation Example 2 on a quartz boat, fixing the heating temperature to 750 ° C, and fixing the ammonia gas volume flow rate to 50 cm 3 /min to compare different hydrogen gases. The effect of volume flow on the growth of carbon nanotubes.

實施例1 不同溫度對於生長奈米碳管之分析Example 1 Analysis of Growth Carbon Tubes at Different Temperatures

本實施例是利用如「材料及方法」中所述的電化學之之充放電測試、場效發射掃描式電子顯微鏡觀察以及顯微拉曼光譜儀測試分析,以評估不同溫度對於生長奈米碳管之影響。This embodiment utilizes the electrochemical charge and discharge test, field emission emission scanning electron microscope observation, and microscopic Raman spectrometer test analysis as described in "Materials and Methods" to evaluate different temperatures for growing carbon nanotubes. The impact.

請參考圖1所示,其係為樣本1至樣本3之比電容及循環數的結果比較圖。由圖1可知,當循環數為100次時,加熱溫度由700℃至750℃之比電容係上升的,但加熱溫度由750℃至800℃之比電容係下降的;請參考表2所示,加熱溫度為750℃所生長之樣本2之平均比表面積大於加熱溫度為700℃所生長之樣本1或800℃所生長之樣本3之平均比表面積,而使得加熱溫度為750℃所生長之樣本2之比電容值高於700℃所生長之樣本1或800℃所生長之樣本3之比電容值。Please refer to FIG. 1 , which is a comparison result of the specific capacitance of the sample 1 to the sample 3 and the number of cycles. As can be seen from Fig. 1, when the number of cycles is 100, the heating temperature is increased from 700 ° C to 750 ° C, but the heating temperature is decreased from 750 ° C to 800 ° C; please refer to Table 2 The average specific surface area of the sample 2 grown at a heating temperature of 750 ° C is larger than the average specific surface area of the sample 3 grown at a heating temperature of 700 ° C or the sample 3 grown at 800 ° C, so that the sample grown at a heating temperature of 750 ° C The specific capacitance value of 2 is higher than the specific capacitance value of sample 3 grown at 700 ° C or sample 3 grown at 800 ° C.

請參考圖2A至圖2C所示,其係分別為樣本1至樣本3以場效發射掃描式電子顯微鏡觀察之結果圖。相較於加熱溫度700℃生長之樣本1(圖2A)或800℃生長之樣本3(圖2C),加熱溫度為750℃生長之樣本2(圖2B)具有均勻較垂直排列趨勢;且於750℃生長之樣本2時,其電解質離子(electrolyte ion)較易滲透至奈米碳管底部,並而使得位於底部之電活性區位置(electroactive site)亦可充份利用,進一步可幫助提高其比電容值。此外,加熱溫度為750℃生長之樣本2當加熱溫度為750℃時,由表2得知其IG /ID 較大,亦即其非晶碳之量較小,而使得加熱溫度為750℃之奈米碳管電極之比電容下降速率(decreasing rate)較慢於加熱溫度700℃或800℃之下降速率。Please refer to FIG. 2A to FIG. 2C , which are graphs of the results of the field emission scanning electron microscope observation of the sample 1 to the sample 3, respectively. Compared with sample 1 (Fig. 2A) grown at 700 °C or sample 3 (Fig. 2C) grown at 800 °C, sample 2 (Fig. 2B) with a heating temperature of 750 °C has a uniform and vertical alignment tendency; When the sample 2 is grown at °C, the electrolyte ion is more permeable to the bottom of the carbon nanotube, and the electroactive site at the bottom can be fully utilized, which can further improve the ratio. Capacitance value. In addition, when the heating temperature is 750 ° C, the sample 2 is obtained. When the heating temperature is 750 ° C, it is known from Table 2 that the I G /I D is large, that is, the amount of amorphous carbon is small, and the heating temperature is 750. The specific capacitance decay rate of the °C carbon nanotube electrode is slower than the heating temperature of 700 ° C or 800 ° C.

實施例2 不同氨氣體積流量對於生長奈米碳管之分析Example 2 Analysis of different ammonia gas volume flow rates for growing carbon nanotubes

本實施例是利用如「材料及方法」中所述的電化學之充放電測試、場效發射掃描式電子顯微鏡觀察以及透射電子顯微鏡觀察分析,以評估通入不同氨氣體積流量對於生長奈米碳管之影響。This embodiment utilizes electrochemical charge and discharge tests, field emission emission scanning electron microscope observations, and transmission electron microscope observations as described in "Materials and Methods" to evaluate the flow rate of different ammonia gas flows for growth of nanometers. The impact of carbon tubes.

請參考圖3所示,其係為樣本2及樣本4至樣本6之比電容及循環數的結果比較圖。其係將加熱溫度固定為750℃,以比較不同氨氣體積流量對於奈米碳管之比電容之影 響。通入氨氣體積流量所生長之樣本2、樣本5及樣本6之密集度以及平均比表面積皆高於未通入氨氣體積流量所生長之樣本4;如表2及圖3所示,故當循環數為100次時,通入氨氣體積流量所生長之樣本2、樣本5及樣本6具有較高比電容值。Please refer to FIG. 3 , which is a comparison chart of the results of the specific capacitance and the number of cycles of sample 2 and sample 4 to sample 6. The heating temperature is fixed at 750 ° C to compare the specific volume flow of different ammonia gas to the specific capacitance of the carbon nanotubes. ring. The concentration and average specific surface area of sample 2, sample 5 and sample 6 grown by the volume flow of ammonia gas are higher than those of sample 4 grown without the volume flow of ammonia gas; as shown in Table 2 and Figure 3, When the number of cycles is 100, the sample 2, sample 5, and sample 6 grown by the flow rate of ammonia gas have a higher specific capacitance value.

請參考圖4A及圖4B所示,其係分別為樣本4及樣本2以場效發射掃描式電子顯微鏡觀察之結果圖。由圖4A及圖4B可知,氨氣體積流量為50 cm3 /min所生長之樣本2(圖4B)相較於氨氣體積流量為0 cm3 /min所生長之樣本4(圖4A)具有較垂直排列趨勢。此外,如表2所示,通入氨氣所生長之樣本2之IG /ID 值明顯高於無通入氨氣之樣本4之IG /ID 值,亦即無通入氨氣所生長之樣本4具有較多數量之非晶質碳,即表示氨氣可有效抑制非晶質碳產生,且如圖3所示,無通入氨氣所生長之樣本4之比電容下降速率快於氨氣體積流量為50 cm3 /min所生長之樣本2之比電容下降速率。Please refer to FIG. 4A and FIG. 4B , which are the results of the observation of the sample 4 and the sample 2 by field emission scanning electron microscope. 4A and 4B, the sample 2 (Fig. 4B) grown with a volumetric flow rate of ammonia of 50 cm 3 /min has a sample 4 (Fig. 4A) grown with a volume flow of ammonia of 0 cm 3 /min. The trend is more vertical. Further, as shown in Table 2, the growth of ammonia into the sample 2 I G / I D significantly higher than the samples without ammonia gas I G / I D value of 4, i.e., no ammonia gas The grown sample 4 has a large amount of amorphous carbon, which means that ammonia gas can effectively suppress the generation of amorphous carbon, and as shown in FIG. 3, the specific capacitance decrease rate of the sample 4 grown without the ammonia gas is introduced. The rate of decrease in specific capacitance of sample 2 grown faster than the volumetric flow rate of ammonia gas at 50 cm 3 /min.

請參考圖5A及圖5B所示,其係分別為樣本4及樣本2以穿透電子顯微鏡觀察之結果圖。由圖5A及圖5B可知,氨氣體積流量為50 cm3 /min所生長之樣本2(圖5B)相較於氨氣體積流量為0 cm3 /min所生長之樣本4(圖5A)具有竹節狀結構產生。Please refer to FIG. 5A and FIG. 5B , which are graphs of the results of observation of the sample 4 and the sample 2 by a transmission electron microscope. 5A and 5B, the sample 2 (Fig. 5B) grown with a volumetric flow rate of ammonia of 50 cm 3 /min has a sample 4 (Fig. 5A) grown with a volume flow of ammonia of 0 cm 3 /min. Bamboo-like structures are produced.

實施例3 氫電漿前處理對於生長奈米碳管之分析Example 3 Hydrogen plasma pretreatment analysis of growing carbon nanotubes

本實施例是利用如「材料及方法」中所述的電化學之充放電測試以及場效發射掃描式電子顯微鏡觀察分析,以評估氫電漿前處理對於生長奈米碳管之影響。In this embodiment, the electrochemical charge and discharge test and the field effect emission scanning electron microscope observation and analysis as described in "Materials and Methods" are used to evaluate the effect of hydrogen plasma pretreatment on the growth of carbon nanotubes.

請參考圖6所示,其係樣本2及樣本7之比電容及循環數的結果比較圖。由圖6可知,以氫電漿前處理催化劑所生長之樣本7之比電容值皆高於未以氫電漿前處理催化劑所生長之樣本2之比電容值,且以氫電漿前處理催化劑所生長之樣本7之比電容下降速率相似於未以氫電漿前處理催化劑所生長之樣本2之比電容下降速率。且由表2可知,以氫電漿前處理催化劑所生長之樣本7以及未以氫電漿前處理催化劑所生長之樣本2之石墨化程度(IG /ID 值)近乎相同,故以氫電漿前處理催化劑所生長之樣本7之比電容下降速率相似於未以氫電漿前處理催化劑所生長之樣本2之比電容下降速率。Please refer to FIG. 6 , which is a comparison chart of the results of the specific capacitance and the number of cycles of sample 2 and sample 7. It can be seen from Fig. 6 that the specific capacitance value of the sample 7 grown by the hydrogen plasma pretreatment catalyst is higher than the specific capacitance value of the sample 2 which is not grown by the hydrogen plasma pretreatment catalyst, and the hydrogen plasma pretreatment catalyst is used. The rate of decrease in the specific capacitance of the grown sample 7 is similar to the rate of decrease in the specific capacitance of the sample 2 which is not grown by the hydrogen plasma pretreatment catalyst. It can be seen from Table 2 that the degree of graphitization (I G /I D value) of the sample 7 grown by the hydrogen plasma pretreatment catalyst and the sample 2 not grown by the hydrogen plasma pretreatment catalyst are almost the same, so hydrogen is used. The ratio of the specific capacitance drop rate of the sample 7 grown by the plasma pretreatment catalyst is similar to that of the sample 2 which is not grown by the hydrogen plasma pretreatment catalyst.

請參考圖7A及圖7B所示,其係樣本2及樣本7以場效發射掃描式電子顯微鏡觀察之結果圖。由圖7B可知,催化劑經由氫電漿前處理後,會還原催化劑表面鈷氧化物,而使其保有催化劑鈷之活性,並使催化劑形成奈米顆粒狀的結構,以作為奈米碳管生長之晶核(nucleation seed),並如表2所示,經由氫電漿前處理催化劑所生長之樣本7相較於未以氫電漿前處理催化劑所生長之樣本2具有較大的平均比表面積,固以氫電漿前處理催化劑所生長之樣本7之比電容值皆高於未以氫電漿前處理催化劑所生長之樣本2之比電容值。Please refer to FIG. 7A and FIG. 7B , which are the results of observation of the sample 2 and the sample 7 by field emission scanning electron microscope. It can be seen from Fig. 7B that after the catalyst is pretreated by hydrogen plasma, the cobalt oxide on the surface of the catalyst is reduced to retain the activity of the catalyst cobalt, and the catalyst is formed into a nano-grain structure to grow as a carbon nanotube. a nucleation seed, and as shown in Table 2, the sample 7 grown via the hydrogen plasma pretreatment catalyst has a larger average specific surface area than the sample 2 grown without the hydrogen plasma pretreatment catalyst. The specific capacitance value of the sample 7 grown by the hydrogen plasma pretreatment catalyst is higher than the specific capacitance value of the sample 2 which is not grown by the hydrogen plasma pretreatment catalyst.

請參考圖8所示,其係樣本7之循環伏安圖,其條件係掃描速率為100 mV/s,電解質為0.1M H2 SO4Please refer to FIG. 8 , which is a cyclic voltammogram of sample 7 under the condition that the scanning rate is 100 mV/s and the electrolyte is 0.1 MH 2 SO 4 .

實施例4 不同氫氣體積流量對於生長奈米碳管之分析Example 4 Analysis of Different Hydrocarbon Volume Flows for Growing Carbon Tubes

本實施例是利用如「材料及方法」中所述的電化學之 充放電測試分析,以評估通入不同氫氣體積流量對於生長奈米碳管之影響。This embodiment utilizes the electrochemical method as described in "Materials and Methods" Charge and discharge test analysis to evaluate the effect of different hydrogen volume flow rates on the growth of carbon nanotubes.

請參考圖9所示,其係樣本8至樣本10之比電容及循環數的結果比較圖。請參考表3所示,通入氫氣流量體積為16 cm3 /min所生長之樣本9之表面積高於通入氫氣流量體積為11 cm3 /min所生長之樣本8及通入氫氣流量體積為21 cm3 /min所生長之樣本10,故以通入氫氣流量體積為16 cm3 /min所生長之樣本9之比電容值較高。Please refer to FIG. 9 , which is a comparison chart of the results of the specific capacitance and the number of cycles of the sample 8 to the sample 10. Referring to Table 3, the surface area of the sample 9 grown with a hydrogen flow volume of 16 cm 3 /min is higher than the sample 8 grown with a flow volume of 11 cm 3 /min, and the flow volume of the introduced hydrogen gas is The sample 10 grown at 21 cm 3 /min has a higher specific capacitance value than the sample 9 grown with a hydrogen flow volume of 16 cm 3 /min.

以上所述僅是本發明的較佳實施例而已,並非對本發明有任何形式上的限制,雖然本發明已以較佳實施例揭露如上,然而並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明技術方案的範圍內,當可利用上述揭示的技術內容做出些許更動或修飾等同變化的等效實施例,但凡是未脫離本發明技術方案的內容,依據本發明的技術實質對以上實施例所做的任何簡單修改、等同變化與修飾,均仍屬於本發明技術方案的範圍內。The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention. The present invention has been disclosed in the preferred embodiments, but is not intended to limit the present invention. A person skilled in the art can make some modifications or modify equivalent changes in the above-described technical contents without departing from the technical scope of the present invention. The invention is not limited to any simple modifications, equivalent changes and modifications of the above embodiments.

圖1係本發明之製備例所得的樣本1至樣本3之比電容及循環數的結果比較圖。Fig. 1 is a graph comparing the results of the specific capacitance and the number of cycles of Samples 1 to 3 obtained in the preparation example of the present invention.

圖2A至圖2C係分別為本發明之製備例所得的樣本1 至樣本3以場效發射掃描式電子顯微鏡觀察之結果圖。2A to 2C are samples 1 obtained in the preparation example of the present invention, respectively. The results of the observation of the sample 3 by field emission scanning electron microscope were carried out.

圖3係本發明之製備例所得的樣本2及樣本4至樣本6之比電容及循環數的結果比較圖。Fig. 3 is a graph comparing the results of the specific capacitance and the number of cycles of sample 2 and sample 4 to sample 6 obtained in the preparation example of the present invention.

圖4A及圖4B係分別為本發明之製備例所得的樣本4及樣本2以場效發射掃描式電子顯微鏡觀察之結果圖。4A and 4B are graphs showing the results of field-effect emission scanning electron microscope observation of Sample 4 and Sample 2 obtained in the preparation example of the present invention, respectively.

圖5A及圖5B係分別為本發明之製備例所得的樣本4及樣本2以穿透電子顯微鏡觀察之結果圖。5A and 5B are graphs showing the results of observation of a sample 4 and a sample 2 obtained by a penetration electron microscope, respectively, in the preparation example of the present invention.

圖6係本發明之製備例所得的樣本2及樣本7之比電容及循環數的結果比較圖。Fig. 6 is a graph comparing the results of the specific capacitance and the number of cycles of the sample 2 and the sample 7 obtained in the preparation example of the present invention.

圖7A及圖7B係分別為本發明之製備例所得的樣本2(催化劑未以氫電漿前處理)及樣本7(催化劑以氫電漿前處理)以場效發射掃描式電子顯微鏡觀察之結果圖。7A and 7B are the results of the field emission scanning electron microscope observation of the sample 2 (the catalyst is not treated with hydrogen plasma) and the sample 7 (the catalyst is treated with hydrogen plasma) obtained in the preparation example of the present invention, respectively. Figure.

圖8係本發明之製備例所得的樣本7之循環伏安圖。Figure 8 is a cyclic voltammogram of Sample 7 obtained in the preparation of the present invention.

圖9係本發明之製備例所得的樣本8至樣本10之比電容及循環數的結果比較圖。Fig. 9 is a graph comparing the results of the specific capacitance and the number of cycles of the sample 8 to the sample 10 obtained in the preparation example of the present invention.

Claims (8)

一種製備奈米碳管之方法,其包括:提供一表面具有催化劑/鈦覆蓋之基材(catalyst-Ti-coated substrate);以射頻氫氣電漿(radio frequency hydrogen-plasma)對於該基材進行前處理(pretreat)後,再藉由熱化學氣相沉積法(thermal chemical vapor deposition,TCVD)於一加熱溫度,通入氨氣以及氫氣,以形成一具有垂直排列、高密集度與低非晶質碳之奈米碳管(carbon nanotubes),其中加熱溫度係介於700℃至800℃,且氨氣之體積流量係介於40cm3 /min至60cm3 /min、氫氣之體積流量係介於11cm3 /min至21cm3 /min。A method for preparing a carbon nanotube, comprising: providing a catalyst-titanium-coated substrate on a surface; and pre-treating the substrate with radio frequency hydrogen-plasma After pretreat, ammonia gas and hydrogen are introduced at a heating temperature by thermal chemical vapor deposition (TCVD) to form a vertical alignment, high concentration and low amorphous state. Carbon nanotubes, wherein the heating temperature is between 700 ° C and 800 ° C, and the volume flow rate of ammonia gas is between 40 cm 3 /min and 60 cm 3 /min, and the volume flow rate of hydrogen is between 11 cm. 3 / min to 21 cm 3 /min. 如請求項1所述之方法,其中催化劑係鈷(Co)。 The method of claim 1, wherein the catalyst is cobalt (Co). 如請求項1所述之方法,其中基材係石墨(graphite)或矽(silicon)。 The method of claim 1, wherein the substrate is graphite or silicon. 如請求項1所述之方法,其中加熱溫度係750℃。 The method of claim 1, wherein the heating temperature is 750 °C. 一種奈米碳管,其中包含如請求項1至4中任一項所述之方法所製得,其中奈米碳管之軸心延伸方向與基材的水平表面呈約85°至95°之垂直排列;該奈米碳管之比表面積係介於2.36×1016 nm2 /cm2 至2.67×1016 nm2 /cm2 之間;該奈米碳管之石墨化程度(IG /ID 值)介於0.89至0.95之間。A carbon nanotube comprising the method of any one of claims 1 to 4, wherein the axial direction of the carbon nanotube extends between about 85 and 95 degrees from the horizontal surface of the substrate. Vertically aligned; the specific surface area of the carbon nanotubes is between 2.36×10 16 nm 2 /cm 2 and 2.67×10 16 nm 2 /cm 2 ; the degree of graphitization of the carbon nanotubes (I G /I The D value) is between 0.89 and 0.95. 一種奈米碳管電極,其中包含如請求項5所述之奈米碳管。 A carbon nanotube electrode comprising the carbon nanotube of claim 5. 一種電化學電容器,其中包含如請求項6所述之奈米碳管電極。 An electrochemical capacitor comprising the carbon nanotube electrode of claim 6. 一種電池,其中包含如請求項6所述之奈米碳管電極。A battery comprising the carbon nanotube electrode as claimed in claim 6.
TW101117330A 2012-05-16 2012-05-16 Preparation of carbon nanotubes and carbon nanotubes and their carbon nanotubes and their applications TWI477639B (en)

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