TWI477582B - Host emitter material and oled containing the same - Google Patents

Host emitter material and oled containing the same Download PDF

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TWI477582B
TWI477582B TW101113972A TW101113972A TWI477582B TW I477582 B TWI477582 B TW I477582B TW 101113972 A TW101113972 A TW 101113972A TW 101113972 A TW101113972 A TW 101113972A TW I477582 B TWI477582 B TW I477582B
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formula
illuminant material
hydrogen
carbazole derivative
following chemical
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TW201335332A (en
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Jian Pei
Ting Lei
Yaoan Mo
Jie Sun
Mengting Lee
Changyen Wu
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Au Optronics Suzhou Corp Ltd
Au Optronics Corp
Univ Beijing
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Description

主發光體材料與含有主發光體材料之有機發光二極體Main illuminant material and organic light emitting diode containing main illuminant material

本發明係關於一種主發光體材料,特別是關於一種磷光主發光體材料。This invention relates to a primary illuminant material, and more particularly to a phosphorescent primary illuminant material.

有機發光二極體(organic light-emitting diode,OLED)屬於電洞(hole)及電子雙注入(dual-injection)元件,其中電洞及電子分別自陽極及陰極注入及傳遞至發光層,於發光層中重組並產生可發光的激子(exciton)。為提升發光效率,上述發光區必須與電極表面隔離,以避免使激子淬滅(quenching)。為此,發展出具有多層結構的高分子發光元件,其結構依序分別為陽極、電洞傳遞層(hole-transport layer,HTL)、發光層(light-emitting layer,EL)、電子傳遞層(electron-transport layer)以及陰極。An organic light-emitting diode (OLED) belongs to a hole and a dual-injection element, in which a hole and an electron are injected and transmitted from an anode and a cathode to a light-emitting layer, respectively. The layers recombine and produce excitable luminescence. In order to improve luminous efficiency, the above-mentioned light-emitting region must be isolated from the electrode surface to avoid quenching of excitons. To this end, a polymer light-emitting device having a multilayer structure has been developed, and its structure is sequentially an anode, a hole-transport layer (HTL), a light-emitting layer (EL), and an electron transport layer ( Electron-transport layer) and cathode.

習知有機發光二極體(OLED)的主發光體材料,例如4,4’,4”-三(9-咔唑基)三苯胺(TcTa)或1,3-雙(9H-咔唑-9-基)苯(mcp)皆屬於電洞傳輸能力較佳的主發光體材料。然而,電洞傳輸能力較佳的主發光體材料往往由於激發三重態(excited triplet state,T1 )能量不足,使得外部量子效率(External Quantum Efficiency,EQE)低落,造成發光效率不佳。A primary illuminant material of a conventional organic light-emitting diode (OLED), such as 4,4',4"-tris(9-carbazolyl)triphenylamine (TcTa) or 1,3-bis(9H-carbazole- 9-yl) benzene (mcp) belongs to the main illuminant material with better hole transporting ability. However, the main illuminant material with better hole transporting ability is often insufficient due to the excited triplet state (T 1 ). The external quantum efficiency (EQE) is lowered, resulting in poor luminous efficiency.

因此本發明之一態樣係提供一種有機發光二極體(OLED)之主發光體材料。上述主發光體材料為一種咔唑衍生物,其具有下列化學式(I)之結構:Therefore, an aspect of the present invention provides a main illuminant material of an organic light emitting diode (OLED). The above primary illuminant material is a carbazole derivative having the structure of the following chemical formula (I):

其中R1 與R2 可分別獨立為R4,其X為硫鍵(sulfur linkage,-S-)、亞碸鍵(sulfoxide linkage,-SO-)或碸鍵(sulfone linkage,-SO2 -),Y為碳或氮,R4 為氫、氟、氯、溴、碘、C1-C30之烷基、C1-C30之烷醇基或芳香基取代基,n為0至2之整數,以及Wherein R 1 and R 2 may each independently be R 4 or X is a sulfur linkage (-S-), a sulfoxide linkage (-SO-) or a sulfone linkage (-SO 2 -), Y is carbon or nitrogen, and R 4 is hydrogen. Fluorine, chlorine, bromine, iodine, C1-C30 alkyl, C1-C30 alkanol or aryl substituent, n is an integer from 0 to 2, and

為氫或,R6 為R4,R4 及n同上所述。For hydrogen or , R 6 is R 4 or , R 4 and n are the same as described above.

根據本發明之一實施例,其中當該化學式(I)之R1 為氫或時,其n=0,X為亞碸鍵(-SO-)或碸鍵(-SO2 -),R4 為氫或氯,當該化學式(I)之R2時,其n=0,X為亞碸鍵(-SO-)或碸鍵(-SO2 -),R4 為氫或氯,且當該化學式(I)之R3時,其n=0,R4 與R5 為氫,則上述主發光體材料之結構為下列化學結構式之一:According to an embodiment of the invention, wherein R 1 of the formula (I) is hydrogen or When n = 0, X is an arylene bond (-SO-) or a hydrazone bond (-SO 2 -), and R 4 is hydrogen or chlorine, when R 2 of the formula (I) is When n = 0, X is an arylene bond (-SO-) or a hydrazone bond (-SO 2 -), R 4 is hydrogen or chlorine, and when R 3 of the formula (I) is When n=0, R 4 and R 5 are hydrogen, the structure of the above-mentioned main illuminant material is one of the following chemical structural formulas:

根據本發明之另一實施例,其中當化學式(I)之R1 與R2時,其n=0,R4 為氫,X為碸鍵(-SO2 -),Y為碳,且當該化學式(I)之R3時,則上述主發光體材料之結構為下列化學結構式:According to another embodiment of the present invention, wherein R 1 and R 2 of the formula (I) are When n = 0, R 4 is hydrogen, X is a hydrazone bond (-SO 2 -), Y is carbon, and when R 3 of the formula (I) is When the structure of the main illuminant material is the following chemical structural formula:

根據本發明之另一實施例,其中當該化學式(I)之R1 與R2時,其n=0,Y為碳,且當該化學式(I)之R3時,其n=0,R5,R6 為R4 時,則上述主發光體材料之結構為下列化學式(II):According to another embodiment of the present invention, wherein R 1 and R 2 of the formula (I) are When n=0, Y is carbon, and when R 3 of the formula (I) is When n=0, R 5 is When R 6 is R 4 , the structure of the above main illuminant material is the following chemical formula (II):

根據本發明之又一實施例,其中當該化學式(I)之R1 與R2時,其n=0,Y為碳,且當該化學式(I)之R3時,其n=0,R5及R6時,則上述主發光體材料之結構為下列化學式(III):According to still another embodiment of the present invention, wherein R 1 and R 2 of the formula (I) are When n = 0, Y is carbon, and when R 3 of the formula (I) is When n=0, R 5 is And R 6 is The structure of the main illuminant material is the following chemical formula (III):

(III)(III)

根據本發明之在一實施例,其中當該化學式(I)之R1 與R2時,其Y為碳,且當該化學式(I)之R3時,n為0至2之整數,則上述主發光體材料之結構為下列化學式(IV):According to an embodiment of the invention, wherein R 1 and R 2 of the formula (I) are When Y is carbon, and when R 3 of the formula (I) is When n is an integer from 0 to 2, the structure of the above-mentioned main illuminant material is the following chemical formula (IV):

根據本發明之一實施例,其中當該化學式(I)之R1 與R2 為R4 時,且當該化學式(I)之R3時,則上述主發光體材料之結構為下列化學式(V):According to an embodiment of the invention, wherein when R 1 and R 2 of the formula (I) are R 4 , and when R 3 of the formula (I) is The structure of the above main illuminant material is the following chemical formula (V):

根據本發明之另一實施例,其中當化學式(V)之R4 為氫時,則上述主發光體材料之結構為下列化學結構式:According to another embodiment of the present invention, wherein when R 4 of the formula (V) is hydrogen, the structure of the main illuminant material is the following chemical structural formula:

根據本發明之又一實施例,上述主發光體材料之之激發三重態能階值(excited triplet state,T1 )為大於2.8電子伏特(eV)。According to still another embodiment of the present invention, the excitation triplet state (T 1 ) of the primary illuminant material is greater than 2.8 electron volts (eV).

本發明之另一態樣係提供一種有機發光二極體(OLED)。其結構包含第一電極與相對於該第一電極之第二電極、配置於第一電極以及第二電極之間的電洞傳輸層與相對於電洞傳輸層之電子傳輸層、以及配置於電洞傳輸層與電子傳輸層之間的發光層,上述發光層包含主發光體材料及客發光體材料,其中主發光體材料係如化學式(I)至(V)任一項所述。Another aspect of the present invention provides an organic light emitting diode (OLED). The structure includes a first electrode and a second electrode opposite to the first electrode, a hole transport layer disposed between the first electrode and the second electrode, and an electron transport layer opposite to the hole transport layer, and configured to be electrically a light-emitting layer between the hole transport layer and the electron transport layer, wherein the light-emitting layer comprises a main light-emitting material and a guest light-emitting material, wherein the main light-emitting material is as described in any one of the chemical formulas (I) to (V).

根據本發明之一實施例,上述有機發光二極體之第一電極與第二電極,係分別選自透明電極或反射電極其中之一。其中透明電極例如可為氧化銦錫(ITO),而反射電極例如可為鋁-氟化鋰(Al/LiF)。According to an embodiment of the invention, the first electrode and the second electrode of the organic light emitting diode are respectively selected from one of a transparent electrode or a reflective electrode. The transparent electrode may be, for example, indium tin oxide (ITO), and the reflective electrode may be, for example, aluminum-lithium fluoride (Al/LiF).

根據本發明之另一實施例,上述有機發光二極體之電洞傳輸層為電洞傳輸材料,例如可為4,4’,4”-三(9-咔唑基)三苯胺(TcTa)。According to another embodiment of the present invention, the hole transport layer of the organic light emitting diode is a hole transport material, and may be, for example, 4,4',4"-tris(9-carbazolyl)triphenylamine (TcTa). .

根據本發明之又一實施例,上述有機發光二極體之墊子傳遞層為電子傳輸材料,例如可為三(8-羥基喹啉)鋁(Alq3 )或4,7-二苯基-1,10-鄰菲咯啉(Bphen)。According to still another embodiment of the present invention, the cushion transfer layer of the organic light-emitting diode is an electron transport material, and may be, for example, tris(8-hydroxyquinoline)aluminum (Alq 3 ) or 4,7-diphenyl-1. , 10-phenanthroline (Bphen).

根據本發明之再一實施例,上述有機發光二極體之客發光體為雙(3,5-二氟苯基吡啶基)-(2-羧基吡啶基)銥(III)(FIrpic)、雙(3,5-二氟苯基吡啶基)四(1-吡唑基)硼酸銥(III)(FIr6)、雙(3,5-二氟苯基吡啶基)-5-(2-吡啶基)-1氫-四唑銥(III)(FIrN4)、雙(3,5-二氟苯基吡啶基)-3-(三氟甲基)-5-(2-吡啶基)-1,2,4-三唑銥(III)(FIrtaz)、三(2-苯基吡啶基)銥(III)(Irppy3)、雙(2-苯基喹啉基)(乙醯丙酮)銥(III)(PQIr)、或三(1-苯基異喹啉基)銥(III)(Irpiq)。According to still another embodiment of the present invention, the guest illuminant of the organic light-emitting diode is bis(3,5-difluorophenylpyridyl)-(2-carboxypyridyl)iridium(III) (FIrpic), double (3,5-Difluorophenylpyridinyl) tetrakis(1-pyrazolyl)borate ruthenium (III) (FIr6), bis(3,5-difluorophenylpyridinyl)-5-(2-pyridyl -1 hydrogen-tetrazolium (III) (FIrN4), bis(3,5-difluorophenylpyridyl)-3-(trifluoromethyl)-5-(2-pyridyl)-1,2 , 4-triazolium (III) (FIrtaz), tris(2-phenylpyridyl)ruthenium (III) (Irppy3), bis(2-phenylquinolinyl) (acetamidineacetone) ruthenium (III) ( PQIr), or tris(1-phenylisoquinolinyl)iridium (III) (Irpiq).

根據本發明之一實施例,上述主發光體材料與上述客發光體材料之重量濃度百分比例為4倍以上,而客發光體材料之重量濃度百分比不為0。According to an embodiment of the present invention, the weight concentration percentage of the main illuminant material and the guest illuminant material is 4 times or more, and the weight concentration percentage of the guest illuminant material is not 0.

根據本發明之另一實施例,上述有機發光二極體之主發光層之外部量子效率(external quantum efficiency,EQE)為13以上。According to another embodiment of the present invention, the external quantum efficiency (EQE) of the main light-emitting layer of the organic light-emitting diode is 13 or more.

以下將以圖示及詳細說明清楚闡述本發明之精神,然而本發明所屬技術領域中具有通常知識者於明瞭本發明之實施方式後,可由本發明所示範之技術,進行改變及修飾,其結果不脫離本發明之精神與範圍。The spirit of the present invention will be clearly described in the following description and detailed description of the present invention. However, the present invention may be modified and modified by the techniques of the present invention after the embodiments of the present invention are disclosed. The spirit and scope of the invention are not departed.

主發光體材料Main illuminant material

本發明之一態樣提供一種有機發光二極體之主發光體材料及其製造方法,上述主發光體材料為一種咔唑衍生物。上述咔唑衍生物之結構如下列化學式(I)所示:One aspect of the present invention provides a main light-emitting material of an organic light-emitting diode, which is a carbazole derivative, and a method for producing the same. The structure of the above carbazole derivative is as shown in the following chemical formula (I):

其中R1 與R2 可分別獨立為R4,其X為硫鍵(sulfur linkage,-S-)、亞碸鍵(sulfoxide linkage,-SO-)或碸鍵(sulfone linkage,-SO2 -),Y為碳或氮,R4 為氫、氟、氯、溴、碘、C1-C30之烷基、C1-C30之烷醇基或芳香基取代基,n為0至2之整數,以及Wherein R 1 and R 2 may each independently be R 4 or X is a sulfur linkage (-S-), a sulfoxide linkage (-SO-) or a sulfone linkage (-SO 2 -), Y is carbon or nitrogen, and R 4 is hydrogen. Fluorine, chlorine, bromine, iodine, C1-C30 alkyl, C1-C30 alkanol or aryl substituent, n is an integer from 0 to 2, and

為氫或,R6 為R4,R4 及n同上所述。For hydrogen or , R 6 is R 4 or , R 4 and n are the same as described above.

實施例1:咔唑衍生物Cbz1Example 1: Carbazole derivative Cbz1

在此提供咔唑衍生物Cbz1及其製造方法,而咔唑衍生物Cbz1可做為有機發光二極體之主發光體材料。上述咔唑衍生物Cbz1之結構如下列化學式所示:Here, a carbazole derivative Cbz1 and a method for producing the same are provided, and the carbazole derivative Cbz1 can be used as a main illuminant material of an organic light-emitting diode. The structure of the above carbazole derivative Cbz1 is as shown in the following chemical formula:

根據本發明之一實施例,咔唑衍生物Cbz1的製造方法包含咔唑的N-苯基化反應、咔唑的單鹵化反應、芳香硫醇基取代反應以及硫鍵氧化反應。藉由上述反應過程,得到咔唑衍生物Cbz1。According to an embodiment of the present invention, a method for producing a carbazole derivative Cbz1 comprises an N-phenylation reaction of carbazole, a monohalogenation reaction of carbazole, an aromatic thiol group substitution reaction, and a sulfur bond oxidation reaction. The carbazole derivative Cbz1 was obtained by the above reaction process.

第1流程First process

在N-苯基化反應(請見第1流程)中,在碳酸鉀的(K2 CO3 )的弱鹼條件下,讓咔唑與碘苯進行二分子親核取代反應,形成氮(N)位置上具有苯基的苯基化產物(1 )。In the N-phenylation reaction (see the first scheme), the carbazole and iodobenzene are subjected to a two-molecule nucleophilic substitution reaction under the weak base condition of potassium carbonate (K 2 CO 3 ) to form nitrogen (N). a phenylated product ( 1 ) having a phenyl group.

苯基化產物(1 )的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.16-8.13(m,2H)、7.63-7.54(m,2H)、7.51-7.40(m,5H)及7.38-7.24(m,4H)。Nuclear magnetic resonance spectrum ( 1 H NMR, 300 MHz, CDCl 3 ) of phenylated product ( 1 ): δ 8.16-8.13 (m, 2H), 7.63 - 7.54 (m, 2H), 7.51-7.40 (m, 5H) And 7.38-7.24 (m, 4H).

第2流程Second process

在單鹵化反應(請見第2流程)中,在N-溴代丁二醯亞胺(NBS)的作用下,使苯基化產物(1 )進行單一溴取代反應,形成3號位置為溴的單鹵化產物(2 )。In the monohalogenation reaction (see the second scheme), the phenylated product ( 1 ) is subjected to a single bromine substitution reaction under the action of N-bromosuccinimide (NBS) to form a bromine at position 3 Monohalogenated product ( 2 ).

第3流程Third process

在芳香硫醇取代反應(請見第3流程)中,在正丁基鋰(n-BuLi)的作用下,讓單鹵化產物(2 )與二苯基二硫醚進行取代反應,形成3號位置為硫醚基的第一硫醚產物(3 )。In the aromatic thiol substitution reaction (see Scheme 3), the monohalogenated product ( 2 ) is substituted with diphenyl disulfide under the action of n-butyllithium (n-BuLi) to form No. 3 The first thioether product ( 3 ) in the position of a thioether group.

第4流程Fourth process

在硫鍵氧化反應(請見第4流程)中,在間氯過氧苯甲酸的作用下,讓第一硫醚產物(3 )的硫鍵進行氧化反應,形成咔唑衍生物Cbz1。In the sulfur bond oxidation reaction (see the fourth scheme), the sulfur bond of the first sulfide product ( 3 ) is subjected to an oxidation reaction under the action of m-chloroperoxybenzoic acid to form a carbazole derivative Cbz1.

咔唑衍生物Cbz1的核磁共振氫譜(1 H NMR,400 MHz,DMSO):δ 9.0(d,1H)、8.5(d,1H)、8.01(q,2H)、7.97(d,1H)、7.7(t,3H)、7.56(m,7H)及7.37(q,2H)。Nuclear magnetic resonance spectroscopy ( 1 H NMR, 400 MHz, DMSO) of the carbazole derivative Cbz1: δ 9.0 (d, 1H), 8.5 (d, 1H), 8.01 (q, 2H), 7.97 (d, 1H), 7.7 (t, 3H), 7.56 (m, 7H) and 7.37 (q, 2H).

第1圖為咔唑衍生物Cbz1的吸收或激發光譜,其中橫軸為波長(nm)且縱軸為標準化強度。由第1圖可知,咔唑衍生物Cbz1的最大吸收波長(-x-)為283及325奈米,室溫激發波長(-△-)為350及367奈米,且溫度77 K最大激發波長(-)為408及436奈米。Fig. 1 is an absorption or excitation spectrum of the carbazole derivative Cbz1 in which the horizontal axis is the wavelength (nm) and the vertical axis is the normalized intensity. As can be seen from Fig. 1, the maximum absorption wavelength (-x-) of the carbazole derivative Cbz1 is 283 and 325 nm, the excitation wavelength at room temperature (-Δ-) is 350 and 367 nm, and the maximum excitation wavelength is 77 K. (-) is 408 and 436 nm.

另外,由第1圖的曲線分布可知,咔唑衍生物Cbz1的吸收光譜(-x-)與室溫激發光譜(-△-)的重疊率小於3%,且吸收光譜(-x-)與溫度77 K最大激發波長(-)的重疊率趨近0%。上述結果表示,由於咔唑衍生物Cbz1的吸收光譜與放射光譜的重疊率極低,因此能有效將吸收光轉為激發光。Further, from the curve distribution of Fig. 1, it is understood that the overlap ratio of the absorption spectrum (-x-) of the carbazole derivative Cbz1 to the room temperature excitation spectrum (-?-) is less than 3%, and the absorption spectrum (-x-) and The overlap rate of the maximum excitation wavelength (-) at a temperature of 77 K approaches 0%. The above results indicate that the absorption ratio of the absorption spectrum of the carbazole derivative Cbz1 to the emission spectrum is extremely low, so that the absorbed light can be efficiently converted into excitation light.

實施例2:咔唑衍生物Cbz2Example 2: Carbazole derivative Cbz2

在此提供咔唑衍生物Cbz2及其製造方法,而咔唑衍生物Cbz2可做為有機發光二極體之主發光體材料。上述咔唑衍生物Cbz2之結構如下列化學式所示:Here, a carbazole derivative Cbz2 and a method for producing the same are provided, and the carbazole derivative Cbz2 can be used as a main illuminant material of an organic light-emitting diode. The structure of the above carbazole derivative Cbz2 is as shown in the following chemical formula:

根據本發明之一實施例,咔唑衍生物Cbz2的製造方法包含咔唑的N-苯基化反應、咔唑的雙鹵化反應、芳香硫醇基取代反應以及硫鍵氧化反應。藉由上述反應過程,得到咔唑衍生物Cbz2。According to an embodiment of the present invention, a method for producing a carbazole derivative Cbz2 comprises an N-phenylation reaction of carbazole, a bishalogenation reaction of carbazole, an aromatic thiol group substitution reaction, and a sulfur bond oxidation reaction. The carbazole derivative Cbz2 was obtained by the above reaction process.

在N-苯基化反應中,藉由如前述第1流程所述之方法,得到氮(N)位置上具有苯基的苯基化產物(1 )。In the N-phenylation reaction, a phenylated product ( 1 ) having a phenyl group at a nitrogen (N) position is obtained by the method described in the above first step.

第5流程Fifth process

在雙鹵化流程(請見第5流程)中,在醋酸(CH3 COOH)的酸性條件下,使苯基化產物(1 )與溴水(Br2 )進行溴化反應,形成3號及6號位置為溴的第一雙鹵化產物(4 )。In the double halogenation process (see Scheme 5), the phenylation product ( 1 ) is brominated with bromine water (Br 2 ) under acidic conditions of acetic acid (CH 3 COOH) to form Nos. 3 and 6. The position is the first double halogenated product of bromine ( 4 ).

第一雙鹵化產物(4 )的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.20(d,2H)、7.64-7.59(m,2H)、7.52-7.48(m,5H)、7.27(s,1H)及7.25(s,1H)。The first halogenated product bis (4) Proton NMR (1 H NMR, 300 MHz, CDCl 3): δ 8.20 (d, 2H), 7.64-7.59 (m, 2H), 7.52-7.48 (m, 5H) , 7.27 (s, 1H) and 7.25 (s, 1H).

第6流程Sixth process

在芳香硫醇基取代反應(請見第6流程)中,在正丁基鋰(n-BuLi)的作用下,讓第一雙鹵化產物(4 )與二苯基二硫醚(Ph2 S2 )進行取代反應,形成3號及6號位置為硫醚基的第二硫醚產物(5 )。In the aromatic thiol group substitution reaction (see Scheme 6), the first bishalogenated product ( 4 ) and diphenyl disulfide (Ph 2 S) are treated with n-butyllithium (n-BuLi). 2 ) A substitution reaction is carried out to form a second sulfide product ( 5 ) having a thioether group at positions 3 and 6.

第二硫醚產物(5 )的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.26(d,2H)、7.66-7.50(m,10H)、7.41-7.38(m,2H)、7.27-7.18(m,5H)及7.16-7.11(m,2H);ESI-MS:[M+1]+ =460。Nuclear magnetic resonance spectrum of the second sulfide product ( 5 ) ( 1 H NMR, 300 MHz, CDCl 3 ): δ 8.26 (d, 2H), 7.66-7.50 (m, 10H), 7.41-7.38 (m, 2H) , 7.27-7.18 (m, 5H) and 7.16-7.11 (m, 2H); ESI-MS: [M+1] + = 460.

第7流程7th process

在硫鍵氧化反應(請見第7流程)中,在間氯過氧苯甲酸(m -CPBA)的作用下(莫爾數比m -CPBA:(5) =4:1),讓第二硫醚產物(5 )的硫鍵進行氧化反應,形成咔唑衍生物Cbz2。In the sulfur bond oxidation reaction (see Scheme 7), under the action of m -chloroperoxybenzoic acid ( m- CPBA) (molar ratio m -CPBA: ( 5) = 4:1), let the second The sulfur bond of the thioether product ( 5 ) undergoes an oxidation reaction to form a carbazole derivative Cbz2.

咔唑衍生物Cbz2的核磁共振氫譜(1 H NMR,400 MHz,DMSO):δ 9.32(d,2H)、8.04(m,6H)、7.64(m,11H)及7.48(d,2H)。Nuclear magnetic resonance spectrum of the carbazole derivative Cbz2 ( 1 H NMR, 400 MHz, DMSO): δ 9.32 (d, 2H), 8.04 (m, 6H), 7.64 (m, 11H) and 7.48 (d, 2H).

第2圖為咔唑衍生物Cbz2的吸收或激發光譜,其中橫軸為波長(nm)且縱軸為標準化強度。由第2圖可知,咔唑衍生物Cbz2的最大吸收波長(-x-)為284及312奈米,室溫激發波長(-△-)為349及367奈米,且溫度77 K最大激發波長(-)為403及435奈米。Fig. 2 is an absorption or excitation spectrum of the carbazole derivative Cbz2 in which the horizontal axis is the wavelength (nm) and the vertical axis is the normalized intensity. As can be seen from Fig. 2, the maximum absorption wavelength (-x-) of the carbazole derivative Cbz2 is 284 and 312 nm, the excitation wavelength at room temperature (-Δ-) is 349 and 367 nm, and the maximum excitation wavelength is 77 K. (-) is 403 and 435 nm.

另外,由第2圖的曲線分布可知,咔唑衍生物Cbz2的吸收光譜(-x-)與室溫激發光譜(-△-)的重疊率小於1%,且吸收光譜(-x-)與溫度77 K最大激發波長(-)的重疊率趨近0%。上述結果表示,由於咔唑衍生物Cbz2的吸收光譜與放射光譜的重疊率極低,因此能有效將吸收光轉為激發光。Further, from the curve distribution of Fig. 2, the overlap ratio of the absorption spectrum (-x-) of the carbazole derivative Cbz2 to the room temperature excitation spectrum (-?-) is less than 1%, and the absorption spectrum (-x-) and The overlap rate of the maximum excitation wavelength (-) at a temperature of 77 K approaches 0%. The above results indicate that the absorption ratio of the absorption spectrum of the carbazole derivative Cbz2 to the emission spectrum is extremely low, so that the absorbed light can be efficiently converted into excitation light.

實施例3:咔唑衍生物Cbbso2Example 3: Carbazole derivative Cbbso2

在此提供咔唑衍生物Cbbso2及其製造方法,而咔唑衍生物Cbbso2可做為有機發光二極體之主發光體材料。上述咔唑衍生物Cbbso2之結構如下列化學式所示:Here, a carbazole derivative Cbbso2 and a method for producing the same are provided, and the carbazole derivative Cbbso2 can be used as a main illuminant material of an organic light-emitting diode. The structure of the above carbazole derivative Cbbso2 is as shown in the following chemical formula:

根據本發明之一實施例,咔唑衍生物Cbbso2的製造方法包含咔唑的N-苯基化反應、咔唑的雙鹵化反應、芳香硫醇基取代反應以及硫鍵氧化反應。藉由上述反應過程,得到咔唑衍生物Cbbso2。According to an embodiment of the present invention, a method for producing a carbazole derivative Cbbso2 comprises an N-phenylation reaction of carbazole, a bishalogenation reaction of carbazole, an aromatic thiol group substitution reaction, and a sulfur bond oxidation reaction. The carbazole derivative Cbbso2 was obtained by the above reaction process.

在N-苯基化反應中,藉由如前述第1流程所述之方法,得到氮(N)位置上具有苯基的苯基化產物(1 )。在雙鹵化流程中,藉由如前述第5流程所述之方法,得到3號及6號位置為溴的第一雙鹵化產物(4 )。在芳香硫醇基取代反應中,藉由如前述第6流程所述之方法,得到3號及6號位置為硫醚基的第二硫醚產物(5 )。In the N-phenylation reaction, a phenylated product ( 1 ) having a phenyl group at a nitrogen (N) position is obtained by the method described in the above first step. In the double halogenation process, the first bishalogenated product ( 4 ) having bromine positions 3 and 6 was obtained by the method described in the above fifth scheme. In the aromatic thiol group substitution reaction, a second thioether product ( 5 ) having a thioether group at positions 3 and 6 is obtained by the method described in the above sixth scheme.

第8流程The eighth process

在硫鍵氧化反應(請見第8流程)中,在間氯過氧苯甲酸(m -CPBA)的作用下(莫爾數比m -CPBA:(5) =2:1),讓第二硫醚產物(5 )的硫鍵進行氧化反應,形成咔唑衍生物Cbbso2。In the sulfur bond oxidation reaction (see Scheme 8), under the action of m -chloroperoxybenzoic acid ( m- CPBA) (moire number ratio m -CPBA: ( 5) = 2:1), let the second The sulfur bond of the thioether product ( 5 ) undergoes an oxidation reaction to form a carbazole derivative Cbbso2.

咔唑衍生物Cbbso2的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.52(t,2H)、7.71-7.57(m,10H)及7.51-7.37(m,9H);ESI-MS:[M+1]+ =514。The carbazole derivative Cbbso2 H NMR (1 H NMR, 300 MHz, CDCl 3): δ 8.52 (t, 2H), 7.71-7.57 (m, 10H) , and 7.51-7.37 (m, 9H); ESI- MS: [M+1] + = 514.

實施例4:咔唑衍生物Cbps2Example 4: Carbazole derivative Cbps2

在此提供咔唑衍生物Cbps2及其製造方法,而咔唑衍生物Cbps2可做為有機發光二極體之主發光體材料。上述咔唑衍生物Cbps2之結構如下列化學式所示:Here, a carbazole derivative Cbps2 and a method for producing the same are provided, and the carbazole derivative Cbps2 can be used as a main illuminant material of an organic light-emitting diode. The structure of the above carbazole derivative Cbps2 is as shown in the following chemical formula:

根據本發明之一實施例,咔唑衍生物Cbps2的製造方法包含咔唑的N-苯基化反應、咔唑的雙鹵化反應、芳香硫醇基取代反應以及硫鍵氧化反應。藉由上述反應過程,得到咔唑衍生物Cbps2。According to an embodiment of the present invention, a method for producing a carbazole derivative Cbps2 comprises an N-phenylation reaction of carbazole, a bishalogenation reaction of carbazole, an aromatic thiol group substitution reaction, and a sulfur bond oxidation reaction. The carbazole derivative Cbps2 was obtained by the above reaction process.

在N-苯基化反應中,藉由如前述第1流程所述之方法,得到氮(N)位置上具有苯基的苯基化產物(1 )。在雙鹵化流程中,藉由如前述第5流程所述之方法,得到3號及6號位置為溴的第一雙鹵化產物(4 )。In the N-phenylation reaction, a phenylated product ( 1 ) having a phenyl group at a nitrogen (N) position is obtained by the method described in the above first step. In the double halogenation process, the first bishalogenated product ( 4 ) having bromine positions 3 and 6 was obtained by the method described in the above fifth scheme.

第9流程9th process

在芳香硫醇基取代反應(請見第9流程)中,在正丁基鋰(n-BuLi)的作用下,讓第一雙鹵化產物(4 )與二吡啶基二硫醚進行取代反應,形成3號及6號位置為硫醚基的第三硫醚產物(6 )。In the aromatic thiol group substitution reaction (see Scheme 9), the first bishalogenated product ( 4 ) is subjected to a substitution reaction with dipyridyl disulfide under the action of n-butyllithium (n-BuLi). A third thioether product ( 6 ) having a thioether group at positions 3 and 6 is formed.

第三硫醚產物(6 )的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.4(d,4H)、7.66(d,2H)、7.63-7.51(m,5H)、7.29(d,2H)、7.42-7.37(m,2H)、7.70-6.93(m,2H)及6.83-6.80(t,2H);ESI-MS:[M+1]+ =463。Nuclear magnetic resonance spectrum of the third sulfide product ( 6 ) ( 1 H NMR, 300 MHz, CDCl 3 ): δ 8.4 (d, 4H), 7.66 (d, 2H), 7.63-7.51 (m, 5H), 7.29 (d, 2H), 7.42-7.37 (m, 2H), 7.70-6.93 (m, 2H), and 6.83-6.80 (t, 2H); ESI-MS: [M+1] + = 463.

第10流程10th process

在硫鍵氧化反應(請見第10流程)中,在間氯過氧苯甲酸(m -CPBA)的作用下(莫爾數比m -CPBA:(6) =4:1),讓第三硫醚產物(6 )的硫鍵進行氧化反應,形成咔唑衍生物Cbps2。In the sulfur bond oxidation reaction (see process 10), under the action of m -chloroperoxybenzoic acid ( m- CPBA) (moire number ratio m -CPBA: ( 6) = 4:1), let the third The sulfur bond of the thioether product ( 6 ) undergoes an oxidation reaction to form a carbazole derivative Cbps2.

咔唑衍生物Cbps2的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.91(d,2H)、8.70(d,2H)、8.31(d,2H)、8.20(dd,2H)、7.96(m,2H)、7.68-7.55(m,4H)及7.42-7.39(m,5H);ESI-MS:[M+1]+ =526。The carbazole derivative Cbps2 H NMR (1 H NMR, 300 MHz, CDCl 3): δ 8.91 (d, 2H), 8.70 (d, 2H), 8.31 (d, 2H), 8.20 (dd, 2H) 7.96 (m, 2H), 7.68-7.55 (m, 4H) and 7.42-7.39 (m, 5H); ESI-MS: [M+1] + = 526.

real 施例5:咔唑衍生物Cbpso2Example 5: Carbazole derivative Cbpso2

在此提供咔唑衍生物Cbpso2及其製造方法,而咔唑衍生物Cbpso2可做為有機發光二極體之主發光體材料。上述咔唑衍生物Cbpso2之結構如下列化學式所示:Here, a carbazole derivative Cbpso2 and a process for producing the same are provided, and the carbazole derivative Cbpso2 can be used as a main illuminant material of an organic light-emitting diode. The structure of the above carbazole derivative Cbpso2 is as shown in the following chemical formula:

根據本發明之一實施例,咔唑衍生物Cbpso2的製造方法包含咔唑的N-苯基化反應、咔唑的雙鹵化反應、芳香硫醇基取代反應以及硫鍵氧化反應。藉由上述反應過程,得到咔唑衍生物Cbpso2。According to an embodiment of the present invention, a method for producing a carbazole derivative Cbpso2 comprises an N-phenylation reaction of carbazole, a bishalogenation reaction of carbazole, an aromatic thiol group substitution reaction, and a sulfur bond oxidation reaction. The carbazole derivative Cbpso2 was obtained by the above reaction process.

在N-苯基化反應中,藉由如前述第1流程所述之方法,得到氮(N)位置上具有苯基的苯基化產物(1 )。在雙鹵化流程中,藉由如前述第5流程所述之方法,得到3號及6號位置為溴的第一雙鹵化產物(4 )。在芳香硫醇基取代反應中,藉由如前述第9流程所述之方法,得到3號及6號位置為硫醚基的第三硫醚產物(6 )。In the N-phenylation reaction, a phenylated product ( 1 ) having a phenyl group at a nitrogen (N) position is obtained by the method described in the above first step. In the double halogenation process, the first bishalogenated product ( 4 ) having bromine positions 3 and 6 was obtained by the method described in the above fifth scheme. In the aromatic thiol group substitution reaction, a third thioether product ( 6 ) having a thioether group at positions 3 and 6 is obtained by the method described in the above ninth scheme.

第11流程11th process

在硫鍵氧化反應(請見第11流程)中,在間氯過氧苯甲酸(m -CPBA)的作用下(莫爾數比m -CPBA:(6) =2:1),讓第三硫醚產物(6 )的硫鍵進行氧化反應,形成咔唑衍生物Cbpso2。In the sulfur bond oxidation reaction (see step 11), under the action of m -chloroperoxybenzoic acid ( m- CPBA) (moire number m- CPBA: ( 6) = 2:1), let the third The sulfur bond of the thioether product ( 6 ) undergoes an oxidation reaction to form a carbazole derivative Cbpso2.

咔唑衍生物Cbpso2的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.60(dd,2H)、8.54-8.50(m,2H)、8.18-8.12(m,2H)、7.91-7.88(m,2H)、7.82-7.78(m,2H)、7.60-7.44(m,3H)、7.42-7.36(m,4H)及7.30-7.25(m,2H);ESI-MS:[M+1]+ =494。Nuclear magnetic resonance spectroscopy of the carbazole derivative Cbpso2 ( 1 H NMR, 300 MHz, CDCl 3 ): δ 8.60 (dd, 2H), 8.54-8.50 (m, 2H), 8.18-8.12 (m, 2H), 7.91 7.88 (m, 2H), 7.82-7.78 (m, 2H), 7.60-7.44 (m, 3H), 7.42-7.36 (m, 4H) and 7.30-7.25 (m, 2H); ESI-MS: [M+ 1] + =494.

實施例6:咔唑衍生物CbbCls2Example 6: Carbazole derivative CbbCls2

在此提供咔唑衍生物CbbCls2及其製造方法,而咔唑衍生物CbbCls2可做為有機發光二極體之主發光體材料。上述咔唑衍生物CbbCls2之結構如下列化學式所示:Here, a carbazole derivative CbbCls2 and a method for producing the same are provided, and the carbazole derivative CbbCls2 can be used as a main illuminant material of an organic light-emitting diode. The structure of the above carbazole derivative CbbCls2 is as shown in the following chemical formula:

根據本發明之一實施例,咔唑衍生物CbbCls2的製造方法包含咔唑的N-苯基化反應、咔唑的雙鹵化反應、芳香硫醇基取代反應以及硫鍵氧化反應。藉由上述反應過程,得到咔唑衍生物CbbCls2。According to an embodiment of the present invention, a method for producing a carbazole derivative CbbCls2 comprises an N-phenylation reaction of carbazole, a bishalogenation reaction of carbazole, an aromatic thiol group substitution reaction, and a sulfur bond oxidation reaction. By the above reaction process, the carbazole derivative CbbCls2 was obtained.

在N-苯基化反應中,藉由如前述第1流程所述之方法,得到氮(N)位置上具有苯基的苯基化產物(1 )。在雙鹵化流程中,藉由如前述第5流程所述之方法,得到3號及6號位置為溴的第一雙鹵化產物(4 )。In the N-phenylation reaction, a phenylated product ( 1 ) having a phenyl group at a nitrogen (N) position is obtained by the method described in the above first step. In the double halogenation process, the first bishalogenated product ( 4 ) having bromine positions 3 and 6 was obtained by the method described in the above fifth scheme.

第12流程12th process

在芳香硫醇基取代反應(請見第12流程)中,在正丁基鋰(n-BuLi)的作用下,讓第一雙鹵化產物(4 )與二對氯苯基二硫醚進行取代反應,形成3號及6號位置為硫醚基的第四硫醚產物(7 )。In the aromatic thiol group substitution reaction (see Scheme 12), the first bishalogenated product ( 4 ) and di-p-chlorophenyl disulfide are replaced by n-butyllithium (n-BuLi). The reaction forms a fourth sulfide product ( 7 ) having a thioether group at positions 3 and 6.

第四硫醚產物(7 )的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 7.67-7.62(m,2H)、7.57-7.50(m,5H)、7.40(d,2H)及7.21-7.11(m,8H);ESI-MS:[M+1]+ =528。Nuclear magnetic resonance spectrum of the fourth sulfide product ( 7 ) ( 1 H NMR, 300 MHz, CDCl 3 ): δ 7.67-7.62 (m, 2H), 7.57-7.50 (m, 5H), 7.40 (d, 2H) And 7.21 - 7.11 (m, 8H); ESI-MS: [M+1] + = 528.

第13流程13th process

在硫鍵氧化反應(請見第13流程)中,在間氯過氧苯甲酸(m -CPBA)的作用下(莫爾數比m -CPBA:(7) =6:1),讓第四硫醚產物(7 )的硫鍵進行氧化反應,形成咔唑衍生物CbbCls2。In the sulfur bond oxidation reaction (see Scheme 13), under the action of m -chloroperoxybenzoic acid ( m- CPBA) (moire number ratio m -CPBA: ( 7) = 6:1), let the fourth The sulfur bond of the thioether product ( 7 ) undergoes an oxidation reaction to form a carbazole derivative CbbCls2.

咔唑衍生物CbbCls2的核磁共振氫譜(1 H NMR,300 MHz,CDCl3):δ 8.80(d,2H)、8.02-7.93(m,6H)、7.67-7.58(m,3H)及7.51-7.41(m,8H);ESI-MS:[M+1]+ =592。The carbazole derivative CbbCls2 H NMR (1 H NMR, 300 MHz, CDCl3): δ 8.80 (d, 2H), 8.02-7.93 (m, 6H), 7.67-7.58 (m, 3H) and 7.51-7.41 (m, 8H); ESI-MS: [M+1] + = 592.

實施例7:咔唑衍生物CbbClso2Example 7: Carbazole derivative CbbClso2

在此提供咔唑衍生物CbbClso2及其製造方法,而咔唑衍生物CbbClso2可做為有機發光二極體之主發光體材料。上述咔唑衍生物CbbClso2之結構如下列化學式所示:Here, a carbazole derivative CbbClso2 and a method for producing the same are provided, and the carbazole derivative CbbClso2 can be used as a main luminescent material of an organic light-emitting diode. The structure of the above carbazole derivative CbbClso2 is as shown in the following chemical formula:

根據本發明之一實施例,咔唑衍生物CbbClso2的製造方法包含咔唑的N-苯基化反應、咔唑的雙鹵化反應、芳香硫醇基取代反應以及硫鍵氧化反應。藉由上述反應過程,得到咔唑衍生物CbbClso2。According to an embodiment of the present invention, a method for producing a carbazole derivative CbbClso2 comprises an N-phenylation reaction of carbazole, a bishalogenation reaction of carbazole, an aromatic thiol group substitution reaction, and a sulfur bond oxidation reaction. By the above reaction process, the carbazole derivative CbbClso2 was obtained.

在N-苯基化反應中,藉由如前述第1流程所述之方法,得到氮(N)位置上具有苯基的苯基化產物(1 )。在雙鹵化流程中,藉由如前述第5流程所述之方法,得到3號及6號位置為溴的第一雙鹵化產物(4 )。在芳香硫醇基取代反應中,藉由如前述第12流程所述之方法,得到3號及6號位置為硫醚基的第四硫醚產物(7 )。In the N-phenylation reaction, a phenylated product ( 1 ) having a phenyl group at a nitrogen (N) position is obtained by the method described in the above first step. In the double halogenation process, the first bishalogenated product ( 4 ) having bromine positions 3 and 6 was obtained by the method described in the above fifth scheme. In the aromatic thiol group substitution reaction, the fourth sulfide product ( 7 ) having a thioether group at positions 3 and 6 is obtained by the method described in the above-mentioned 12th step.

第14流程14th process

在硫鍵氧化反應(請見第14流程)中,在間氯過氧苯甲酸(m -CPBA)的作用下(莫爾數比m -CPBA:(7) =3:1),讓第四硫醚產物(7 )的硫鍵進行氧化反應,形成咔唑衍生物CbbClso2。In the sulfur bond oxidation reaction (see step 14), under the action of m -chloroperoxybenzoic acid ( m- CPBA) (molar ratio m -CPBA: ( 7) = 3:1), let the fourth The sulfur bond of the thioether product ( 7 ) undergoes an oxidation reaction to form a carbazole derivative CbbClso2.

咔唑衍生物CbbClso2的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.81(d,2H)、8.49-7.51(m,6H)、7.49-7.41(m,3H)及7.39-7.37(m,8H);ESI-MS:[M+1]+ =560。Nuclear magnetic resonance spectroscopy of the carbazole derivative CbbClso2 ( 1 H NMR, 300 MHz, CDCl 3 ): δ 8.81 (d, 2H), 8.49-7.51 (m, 6H), 7.49-7.41 (m, 3H) and 7.39- 7.37 (m, 8H); ESI-MS: [M+1] + = 560.

表1為上述7種咔唑衍生物的最大吸收波長、最大激發波長及激發三重態能階值(excited triplet state,T1 )。由表1的結果可知,上述7種咔唑衍生物的最大吸收波長與最大激發波長之差距為28-95奈米,且T1 值為3.00-3.05電子伏特(eV)。Table 1 shows the maximum absorption wavelength, the maximum excitation wavelength, and the excited triplet state (T 1 ) of the above seven carbazole derivatives. As is clear from the results of Table 1, the difference between the maximum absorption wavelength and the maximum excitation wavelength of the above seven carbazole derivatives was 28 to 95 nm, and the T 1 value was 3.00 to 3.05 electron volts (eV).

其中,當主發光材料之T1 值大於2.8電子伏特時,此主發光材料之發光效率較佳。相較於習知主發光體材料TcTa之T1 值為2.7,上述咔唑衍生物之T1 值均大於2.8電子伏特,因此具有較佳的發光效率。Wherein, when the T 1 value of the main luminescent material is greater than 2.8 eV, the luminous efficiency of the main luminescent material is better. Compared with the conventional main illuminant material TcTa, the T 1 value is 2.7, and the above carbazole derivatives have T 1 values of more than 2.8 eV, and thus have better luminous efficiency.

實施例8:咔唑衍生物Cbz3Example 8: Carbazole derivative Cbz3

在此提供咔唑衍生物Cbz3及其製造方法,而咔唑衍生物Cbz3可做為有機發光二極體之主發光體材料。上述咔唑衍生物Cbz3之結構如下列化學式所示:Here, a carbazole derivative Cbz3 and a method for producing the same are provided, and the carbazole derivative Cbz3 can be used as a main illuminant material of an organic light-emitting diode. The structure of the above carbazole derivative Cbz3 is as shown in the following chemical formula:

根據本發明之一實施例,咔唑衍生物Cbz3的製造方法包含咔唑的N-聯苯基化反應、咔唑的雙鹵化反應、芳香硫醇基取代反應以及硫鍵氧化反應。藉由上述反應過程,得到咔唑衍生物Cbz3。According to an embodiment of the present invention, a method for producing a carbazole derivative Cbz3 comprises an N-biphenylation reaction of a carbazole, a bishalogenation reaction of a carbazole, an aromatic thiol group substitution reaction, and a sulfur bond oxidation reaction. The carbazole derivative Cbz3 was obtained by the above reaction process.

第15流程15th process

在N-聯苯基化反應(請見第15流程)中,在碳酸鉀的(K2 CO3 )的弱鹼條件下,讓咔唑與碘苯進行二分子親核取代反應,形成氮(N)位置上具有聯苯基的聯苯基化產物(8 )。In the N-biphenylation reaction (see Scheme 15), the carbazole and iodobenzene are subjected to a two-molecule nucleophilic substitution reaction under the weak base condition of potassium carbonate (K 2 CO 3 ) to form nitrogen ( N) a biphenylated product ( 8 ) having a biphenyl group.

聯苯基化產物(8 )的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.16(d,2H,J =7.5 Hz)、7.83(d,2H,J =8.7 Hz)、7.68(dd,4H,J =9 Hz,12 Hz)及7.54-7.33(m,9H);ESI-MS:[M+1]+ =319。Nuclear magnetic resonance spectrum ( 1 H NMR, 300 MHz, CDCl 3 ) of the biphenylated product ( 8 ): δ 8.16 (d, 2H, J = 7.5 Hz), 7.83 (d, 2H, J = 8.7 Hz), 7.68 (dd, 4H, J = 9 Hz, 12 Hz) and 7.54 - 7.33 (m, 9H); ESI-MS: [M+1] + = 319.

第16流程16th process

在雙鹵化反應(請見第16流程)中,在醋酸(CH3 COOH)的酸性條件下,使聯苯基化產物(8 )與溴水(Br2 )進行溴化反應,形成3號及6號位置為溴的第二雙鹵化產物(9 )。In the double halogenation reaction (see the 16th process), the biphenylated product ( 8 ) is brominated with bromine water (Br 2 ) under acidic conditions of acetic acid (CH 3 COOH) to form No. 3 and Position 6 is the second bishalogenated product of bromine ( 9 ).

第二雙鹵化產物(9 )的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.20(d,2H,J =1.8 Hz)、7.81(d,2H,J =8.1 Hz)、7.67(d,2H,J =7.8 Hz)及7.57-7.29(m,9H);ESI-MS:[M+1]+ =477。Nuclear magnetic resonance spectrum ( 1 H NMR, 300 MHz, CDCl 3 ) of the second bishalogenated product ( 9 ): δ 8.20 (d, 2H, J = 1.8 Hz), 7.81 (d, 2H, J = 8.1 Hz), 7.67 (d, 2H, J = 7.8 Hz) and 7.57-7.29 (m, 9H); ESI-MS: [M+1] + = 477.

第17流程17th process

在芳香硫醇基取代反應(請見第17流程)中,在正丁基鋰(n-BuLi)的作用下,讓第二雙鹵化產物(9 )與二苯基二硫醚(Ph2 S2 )進行取代反應,形成3號及6號位置為硫醚基的第五硫醚產物(10 )。In the aromatic thiol group substitution reaction (see Scheme 17), the second bishalogenated product ( 9 ) and diphenyl disulfide (Ph 2 S) are treated with n-butyllithium (n-BuLi). 2 ) A substitution reaction is carried out to form a fifth sulfide product ( 10 ) having a thioether group at positions 3 and 6.

第五硫醚產物(10 )的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.26(d,2H,J =1.5 Hz)、7.84(d,2H,J =6.9 Hz)、7.68-7.42(m,9H)及7.24-7.12(m,10H);ESI-MS:[M+1]+ =535。Nuclear magnetic resonance spectrum ( 1 H NMR, 300 MHz, CDCl 3 ) of the fifth sulfide product ( 10 ): δ 8.26 (d, 2H, J = 1.5 Hz), 7.84 (d, 2H, J = 6.9 Hz), 7.68-7.42 (m, 9H) and 7.24-7.12 (m, 10H); ESI-MS: [M+1] + = 535.

第18流程18th process

在硫鍵氧化反應(請見第18流程)中,在間氯過氧苯甲酸(m -CPBA)的作用下(莫爾數比m -CPBA:(10) =4:1),讓第五硫醚產物(10 )的硫鍵進行氧化反應,形成咔唑衍生物Cbz3。In the sulfur bond oxidation reaction (see the 18th process), under the action of m -chloroperoxybenzoic acid ( m- CPBA) (moire number ratio m -CPBA: ( 10) = 4:1), let the fifth The sulfur bond of the thioether product ( 10 ) undergoes an oxidation reaction to form a carbazole derivative Cbz3.

咔唑衍生物Cbz3的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.82(d,2H,J =1.2 Hz)、8.06-7.85(m,9H)、7.38(d,2H,J =8.4 Hz)、7.66(d,2H,J =8.4 Hz)及7.58-7.42(m,10H);ESI-MS:[M+1]+ =599。The carbazole derivative Cbz3 H NMR (1 H NMR, 300 MHz, CDCl 3): δ 8.82 (d, 2H, J = 1.2 Hz), 8.06-7.85 (m, 9H), 7.38 (d, 2H, J = 8.4 Hz), 7.66 (d, 2H, J = 8.4 Hz) and 7.58-7.42 (m, 10H); ESI-MS: [M+1] + = 599.

實施例9:咔唑衍生物FYL-B41Example 9: Carbazole derivative FYL-B41

在此提供咔唑衍生物FYL-B41及其製造方法,而咔唑衍生物FYL-B41可做為有機發光二極體之主發光體材料。上述咔唑衍生物FYL-B41之結構如下列化學式所示:Here, a carbazole derivative FYL-B41 and a method for producing the same are provided, and the carbazole derivative FYL-B41 can be used as a main luminescent material of an organic light-emitting diode. The structure of the above carbazole derivative FYL-B41 is as shown in the following chemical formula:

根據本發明之一實施例,咔唑衍生物FYL-B41的製造方法包含硫酸醯胺取代反應以及二咔唑取代反應。藉由上述反應過程,得到咔唑衍生物FYL-B41。According to an embodiment of the present invention, a method for producing a carbazole derivative FYL-B41 comprises a guanidinium sulfate substitution reaction and a dicarbazole substitution reaction. The carbazole derivative FYL-B41 was obtained by the above reaction process.

第19流程19th process

在硫酸醯胺取代反應(請見第19流程)中,在三乙基胺(Et3 N)的鹼性條件下,讓1,2-雙(4’-溴苯基)乙二酮與硫酸醯胺()進行取代反應,形成具有噻二唑基團的硫酸醯胺取代產物(11 )。In the hydrazine sulfate substitution reaction (see Scheme 19), 1,2-bis(4'-bromophenyl)ethanedione and sulfuric acid were obtained under alkaline conditions of triethylamine (Et 3 N). Guanamine The substitution reaction is carried out to form a guanidinium sulfate substituted product ( 11 ) having a thiadiazole group.

硫酸醯胺取代產物(11 )的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 7.64(d,4H,J =6.0 Hz)及7.44(d,4H,J =8.7 Hz);ESI-MS:[M+1]+ =428。Ammonium sulfate substituted acyl product (11) Proton NMR (1 H NMR, 300 MHz, CDCl 3): δ 7.64 (d, 4H, J = 6.0 Hz) and 7.44 (d, 4H, J = 8.7 Hz); ESI-MS: [M+1] + = 428.

第20流程20th process

在二咔唑取代反應(請見第20流程)中,在碘化銅(CuI)的催化下,讓硫酸醯胺取代產物(11 )與咔唑進行取代反應(莫爾數比咔唑:(11) =2.5:1),形成具有二咔唑基團的咔唑衍生物FYL-B41。In the dicarbazole substitution reaction (see Scheme 20), the hydrazine sulfate substituted product ( 11 ) is subjected to a substitution reaction with carbazole under the catalysis of copper iodide (CuI) (molar ratio carbazole: ( 11) = 2.5: 1), a carbazole derivative FYL-B41 having a dicarbazole group is formed.

咔唑衍生物FYL-B41的核磁共振氫譜(1 H NMR,300 MHz,CDCl3 ):δ 8.14(dd,4H,J =1.8 Hz,7.2 Hz)、7.66(dd,4H,J =1.8 Hz,7.2 Hz)、7.50-7.44(m,4H)、7.42-7.36(m,4H)、7.32-7.28(m,4H)及7.11-7.06(m,4H);ESI-MS:[M+1]+ =600。FYL-B41 carbazole derivative spectra of proton nuclear magnetic resonance (1 H NMR, 300 MHz, CDCl 3): δ 8.14 (dd, 4H, J = 1.8 Hz, 7.2 Hz), 7.66 (dd, 4H, J = 1.8 Hz , 7.2 Hz), 7.50-7.44 (m, 4H), 7.42-7.36 (m, 4H), 7.32-7.28 (m, 4H) and 7.11-7.06 (m, 4H); ESI-MS: [M+1] + =600.

咔唑衍生物於有機發光二極體之應用Application of carbazole derivatives in organic light-emitting diodes

由於上述之咔唑衍生物可做為有機發光二極體之主發光體材料,因此在下面的實施例中應用上述之咔唑衍生物來製造有機發光二極體。Since the above carbazole derivative can be used as the main illuminant material of the organic light-emitting diode, the above-described carbazole derivative is used in the following examples to produce an organic light-emitting diode.

上述有機發光二極體之結構如第3圖所示。在第3圖中,有機發光二極體100的結構包含第一電極110與相對於該第一電極110之第二電極120、配置於第一電極110以及第二電極120之間的電洞傳輸層130與相對於電洞傳輸層130之電子傳輸層140、以及配置於電洞傳輸層130與電子傳輸層140之間的發光層150。上述發光層150包含主發光體材料及客發光體材料,其中主發光體材料可用上述之咔唑衍生物。The structure of the above organic light-emitting diode is as shown in Fig. 3. In FIG. 3, the structure of the organic light emitting diode 100 includes a first electrode 110 and a second electrode 120 opposite to the first electrode 110, and a hole transmission disposed between the first electrode 110 and the second electrode 120. The layer 130 and the electron transport layer 140 opposite to the hole transport layer 130 and the light emitting layer 150 disposed between the hole transport layer 130 and the electron transport layer 140. The luminescent layer 150 includes a main illuminant material and a guest illuminant material, wherein the main illuminant material may be a carbazole derivative as described above.

實施例10Example 10

實施例10提供一種有機發光二極體,其結構如第3圖所示。其中第一電極110為氧化銦錫(ITO)基材,第二電極120為鋁-氟化鋰(Al/LiF),電洞傳輸層130為電洞傳輸材料AUS HIL及4,4’,4”-三(9-咔唑基)三苯胺(TcTa),電子傳輸層140為三(8-羥基喹啉)鋁(Alq3 ),以及發光層150為咔唑衍生物Cbz1與雙(3,5-二氟苯基吡啶基)-(2-羧基吡啶基)銥(III)(FIrpic)混合而成。Embodiment 10 provides an organic light-emitting diode having a structure as shown in FIG. The first electrode 110 is an indium tin oxide (ITO) substrate, the second electrode 120 is aluminum-lithium fluoride (Al/LiF), and the hole transport layer 130 is a hole transport material AUS HIL and 4, 4', 4 "-Tris(9-carbazolyl)triphenylamine (TcTa), the electron transport layer 140 is tris(8-hydroxyquinoline)aluminum (Alq 3 ), and the luminescent layer 150 is a carbazole derivative Cbz1 and bis (3, 5-Difluorophenylpyridinyl)-(2-carboxypyridinyl)phosphonium (III) (FIrpic) was mixed.

其中發光層組合物之主發光體材料為咔唑衍生物Cbz1,而客發光體材料為雙(3,5-二氟苯基吡啶基)-(2-羧基吡啶基)銥(III)(FIrpic)。而主發光體材料與客發光體材料之重量濃度百分比例為4倍以上,且客發光體材料之重量濃度百分比實質上不等於0。The main illuminant material of the luminescent layer composition is carbazole derivative Cbz1, and the guest illuminant material is bis(3,5-difluorophenylpyridyl)-(2-carboxypyridyl) ruthenium (III) (FIrpic) ). The percentage by weight of the main illuminant material and the guest illuminant material is, for example, four times or more, and the weight concentration percentage of the guest illuminant material is substantially not equal to zero.

實施例11Example 11

實施例11提供一種有機發光二極體,其結構如第3圖所示。其中第一電極110為氧化銦錫(ITO)基材,第二電極120為鋁-氟化鋰(Al/LiF),電洞傳輸層130為電洞傳輸材料AUS HIL及4,4’,4”-三(9-咔唑基)三苯胺(TcTa),電子傳輸層140為三(8-羥基喹啉)鋁(Alq3 ),以及發光層150為咔唑衍生物Cbz2與雙(3,5-二氟苯基吡啶基)-(2-羧基吡啶基)銥(III)(FIrpic)混合而成。Embodiment 11 provides an organic light-emitting diode having a structure as shown in FIG. The first electrode 110 is an indium tin oxide (ITO) substrate, the second electrode 120 is aluminum-lithium fluoride (Al/LiF), and the hole transport layer 130 is a hole transport material AUS HIL and 4, 4', 4 "-Tris(9-carbazolyl)triphenylamine (TcTa), the electron transport layer 140 is tris(8-hydroxyquinoline)aluminum (Alq 3 ), and the luminescent layer 150 is a carbazole derivative Cbz2 and bis (3, 5-Difluorophenylpyridinyl)-(2-carboxypyridinyl)phosphonium (III) (FIrpic) was mixed.

其中發光層組合物之主發光體材料為咔唑衍生物Cbz1,而客發光體材料為雙(3,5-二氟苯基吡啶基)-(2-羧基吡啶基)銥(III)(FIrpic)。而主發光體材料與客發光體材料之重量濃度百分比例為4倍以上,且客發光體材料之重量濃度百分比實質上不等於0。The main illuminant material of the luminescent layer composition is carbazole derivative Cbz1, and the guest illuminant material is bis(3,5-difluorophenylpyridyl)-(2-carboxypyridyl) ruthenium (III) (FIrpic) ). The percentage by weight of the main illuminant material and the guest illuminant material is, for example, four times or more, and the weight concentration percentage of the guest illuminant material is substantially not equal to zero.

表2為比較不同主發光體材料,對有機發光二極體(OLED)之發光強度與外部量子效率之影響。其中實施例10及實施例11分別以Cbz1及Cbz2為主發光體材料;而比較例係以習知TcTa為主發光體材料。由表2的結果可知,相較於比較例,實施例10及實施例11之發光強度均明顯較佳(≧26.5 cd/A),且外部量子效率(External Quantum Efficiency,EQE)亦明顯較佳(≧13%)。Table 2 compares the effects of different main illuminant materials on the luminescence intensity and external quantum efficiency of organic light-emitting diodes (OLEDs). In the examples 10 and 11, respectively, Cbz1 and Cbz2 are the main illuminant materials, and in the comparative example, the conventional TcTa is the main illuminant material. From the results of Table 2, the luminescence intensity of Example 10 and Example 11 was significantly better than that of the comparative example (≧26.5 cd/A), and the external quantum efficiency (EQE) was also significantly better. (≧13%).

本發明之一態樣所提供之主發光體材料具有較佳的電洞傳輸能力,並且因為其T1 值大於2.8電子伏特,提升外部量子效率,使得發光強度明顯增加。因此,對於習知技術問題,上述主發光體材料係為一較佳解決方案,並且可直接應用於有機發光二極體之磷光發光層。The primary illuminant material provided by one aspect of the present invention has better hole transporting ability, and because its T 1 value is greater than 2.8 eV, the external quantum efficiency is increased, so that the luminescence intensity is significantly increased. Therefore, the above-mentioned main illuminant material is a preferred solution to the conventional technical problems, and can be directly applied to the phosphorescent luminescent layer of the organic light-emitting diode.

本發明之最佳實施方式以揭露如上所述,然而所列舉之製造方法並不局限於本發明之實施例。任何本發明所屬技術領域中習之技藝者,在不偏離本發明之精神與範圍時,可進行各種修飾或變換。故此本發明之保護範圍當以下所附之申請專利範圍所界定者為之。The preferred embodiments of the present invention are disclosed as described above, however, the illustrated manufacturing methods are not limited to the embodiments of the present invention. Various modifications and changes can be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100...有機發光二極體100. . . Organic light-emitting diode

110...第一電極110. . . First electrode

120...第二電極120. . . Second electrode

130...電洞傳輸層130. . . Hole transport layer

140...電子傳輸層140. . . Electronic transport layer

150...發光層150. . . Luminous layer

第1圖為咔唑衍生物Cbz1的吸收或激發光譜,其中橫軸為波長(nm)且縱軸為標準化強度,其中咔唑衍生物Cbz1的最大吸收波長(-x-),室溫激發波長(-△-),以及溫度77 K最大激發波長(-)。Figure 1 is the absorption or excitation spectrum of the carbazole derivative Cbz1, wherein the horizontal axis is the wavelength (nm) and the vertical axis is the normalized intensity, wherein the maximum absorption wavelength (-x-) of the carbazole derivative Cbz1, room temperature excitation wavelength (-△-), and the maximum excitation wavelength (-) at a temperature of 77 K.

第2圖為咔唑衍生物Cbz2的吸收或激發光譜,其中橫軸為波長(nm)且縱軸為標準化強度,其中咔唑衍生物Cbz2的最大吸收波長(-x-),室溫激發波長(-△-),以及溫度77 K最大激發波長(-)。Figure 2 is the absorption or excitation spectrum of the carbazole derivative Cbz2, wherein the horizontal axis is the wavelength (nm) and the vertical axis is the normalized intensity, wherein the maximum absorption wavelength (-x-) of the carbazole derivative Cbz2, room temperature excitation wavelength (-△-), and the maximum excitation wavelength (-) at a temperature of 77 K.

第3圖係繪示依照本發明一態樣的有機發光二極體100之結構示意圖。3 is a schematic view showing the structure of an organic light-emitting diode 100 according to an aspect of the present invention.

100...有機發光二極體100. . . Organic light-emitting diode

110...第一電極110. . . First electrode

120...第二電極120. . . Second electrode

130...電洞傳輸層130. . . Hole transport layer

140...電子傳輸層140. . . Electronic transport layer

150...發光層150. . . Luminous layer

Claims (11)

一種主發光體(host)材料,該主發光體材料為一咔唑(carbazole)衍生物,其具有下列化學式(I): 其中R1 與R2 分別獨立為氫或,且R1 與R2 其中至少一為,其X為硫鍵(sulfur linkage,-S-)、亞碸鍵(sulfoxide linkage,-SO-)或碸鍵(sulfone linkage,-SO2 -),Y為碳或氮,R4 為氫、氟、氯、溴、碘、C1-C30之烷基、C1-C30之烷醇基或芳香基取代基,n為0至2之整數,以及,其 R5 為氫或,R6 為R4,R4 及n同上所述。A host material which is a carbazole derivative having the following chemical formula (I): Wherein R 1 and R 2 are independently hydrogen or And at least one of R 1 and R 2 is X is a sulfur linkage (-S-), a sulfoxide linkage (-SO-) or a sulfone linkage (-SO 2 -), Y is carbon or nitrogen, and R 4 is hydrogen. Fluorine, chlorine, bromine, iodine, C1-C30 alkyl, C1-C30 alkanol or aryl substituent, n is an integer from 0 to 2, and , whose R 5 is hydrogen or , R 6 is R 4 or , R 4 and n are the same as described above. 如請求項1所述之主發光體材料,其中該化學式(I)之R1 為氫時,或R1時,其n=0,X為亞碸鍵(-SO-)或碸鍵(-SO2 -),R4 為氫或氯,該化學式(I)之R2時,其n=0,X為亞碸鍵(-SO-)或碸鍵(-SO2 -),R4 為氫或氯,且該化學式(I)之R3時,其n=0,R4 與R5 為氫,則該主發光體材料之結構為下列化學結構式之一: The primary illuminant material of claim 1, wherein R 1 of the formula (I) is hydrogen, or R 1 is When n = 0, X is an arylene bond (-SO-) or a hydrazone bond (-SO 2 -), R 4 is hydrogen or chlorine, and R 2 of the formula (I) is When n = 0, X is an arylene bond (-SO-) or a hydrazone bond (-SO 2 -), R 4 is hydrogen or chlorine, and R 3 of the formula (I) is When n=0, and R 4 and R 5 are hydrogen, the structure of the main illuminant material is one of the following chemical structural formulas: 如請求項1所述之主發光體材料,其中該化學式(I)之R1 與R2時,其n=0,R4 為氫,X為碸鍵(-SO2 -),Y為碳,且該化學式(I)之R3時,則 該主發光體材料具有下列之化學結構式: The primary illuminant material of claim 1, wherein R 1 and R 2 of the formula (I) are When n = 0, R 4 is hydrogen, X is a hydrazone bond (-SO 2 -), Y is carbon, and R 3 of the formula (I) is When the primary illuminant material has the following chemical structural formula: 如請求項1所述之主發光體材料,其中該化學式(I)之R1 與R2時,其n=0,Y為碳,且該化學式(I)之R3時,其n=0,R5,R6 為R4 時,則該主發光體材料之結構為下列化學式(II): The primary illuminant material of claim 1, wherein R 1 and R 2 of the formula (I) are When n = 0, Y is carbon, and R 3 of the formula (I) is When n=0, R 5 is When R 6 is R 4 , the structure of the main illuminant material is the following chemical formula (II): 如請求項1所述之主發光體材料,其中該化學式(I)之R1 與R2時,其n=0,Y為碳,且該化學式(I)之R3時,其n=0,R5及R6時,則該主發光體材料之結構為下列化學式(III): The primary illuminant material of claim 1, wherein R 1 and R 2 of the formula (I) are When n = 0, Y is carbon, and R 3 of the formula (I) is When n=0, R 5 is And R 6 is The structure of the main illuminant material is the following chemical formula (III): 如請求項1所述之主發光體材料,其中該化學式(I)之R1 與R2時,其Y為碳,且該化學式(I)之 R3時,n為0至2之整數,則該主發光體材料之結構為下列化學式(IV): The primary illuminant material of claim 1, wherein R 1 and R 2 of the formula (I) are When Y is carbon, and R 3 of the formula (I) is When n is an integer from 0 to 2, the structure of the main illuminant material is the following chemical formula (IV): 如請求項1所述之主發光體材料,其中該化學式(I)之R1 與R2 為R4 時,且該化學式(I)之R3時,則該主發光體材料之結構為下列化學式(V): The host material according to claim 1, wherein R 1 and R 2 of the formula (I) are R 4 , and R 3 of the formula (I) is The structure of the main illuminant material is the following chemical formula (V): 如請求項7所述之主發光體材料,其中該化學式(V)之R4 為氫時,則該主發光體材料之結構如下列化學結構式所示: The main illuminant material according to claim 7, wherein when the R 4 of the formula (V) is hydrogen, the structure of the main illuminant material is as shown in the following chemical structural formula: 一種有機發光二極體,包含:一第一電極以及一相對於該第一電極之第二電極;一電洞傳輸層以及一相對於該電洞傳輸層之電子傳輸層,其中該電洞傳輸層與該電子傳輸層配置於該第一電極以及該第二電極之間;以及一發光層,配置於該電洞傳輸層與該電子傳輸層之 間,該發光層包含一主發光體材料及一客發光體材料,該主發光體材料係如請求項1至8之任一項所述。 An organic light emitting diode comprising: a first electrode and a second electrode opposite to the first electrode; a hole transport layer and an electron transport layer opposite to the hole transport layer, wherein the hole transport a layer and the electron transport layer disposed between the first electrode and the second electrode; and a light emitting layer disposed on the hole transport layer and the electron transport layer The luminescent layer comprises a primary illuminant material and a guest illuminant material, as described in any one of claims 1 to 8. 如請求項9所述之有機發光二極體,其中該客發光體為雙(3,5-二氟苯基吡啶基)-(2-羧基吡啶基)銥(III)(FIrpic)、雙(3,5-二氟苯基吡啶基)四(1-吡唑基)硼酸銥(III)(FIr6)、雙(3,5-二氟苯基吡啶基)-5-(2-吡啶基)-1氫-四唑銥(III)(FIrN4)、雙(3,5-二氟苯基吡啶基)-3-(三氟甲基)-5-(2-吡啶基)-1,2,4-三唑銥(III)(FIrtaz)、三(2-苯基吡啶基)銥(III)(Irppy3)、雙(2-苯基喹啉基)(乙醯丙酮)銥(III)(PQIr)、或三(1-苯基異喹啉基)銥(III)(Irpiq)。 The organic light-emitting diode according to claim 9, wherein the guest illuminant is bis(3,5-difluorophenylpyridyl)-(2-carboxypyridyl)iridium (III) (FIrpic), double ( 3,5-Difluorophenylpyridyl)tetrakis(1-pyrazolyl)borate (III) (FIr6), bis(3,5-difluorophenylpyridyl)-5-(2-pyridyl) -1 hydrogen-tetrazolium (III) (FIrN4), bis(3,5-difluorophenylpyridinyl)-3-(trifluoromethyl)-5-(2-pyridyl)-1,2, 4-triazolium (III) (FIrtaz), tris(2-phenylpyridyl)ruthenium (III) (Irppy3), bis(2-phenylquinolinyl)(acetoxime) ruthenium (III) (PQIr Or, tris(1-phenylisoquinolinyl)iridium (III) (Irpiq). 如請求項10所述之有機發光二極體,其中該主發光體材料與該客發光體材料之重量濃度百分比例為4倍以上,而該客發光體材料之重量濃度百分比不為0。 The organic light-emitting diode according to claim 10, wherein the percentage of the weight concentration of the main illuminant material and the guest illuminant material is 4 times or more, and the weight concentration percentage of the guest illuminant material is not 0.
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