TWI476774B - Shift register - Google Patents

Shift register Download PDF

Info

Publication number
TWI476774B
TWI476774B TW101140877A TW101140877A TWI476774B TW I476774 B TWI476774 B TW I476774B TW 101140877 A TW101140877 A TW 101140877A TW 101140877 A TW101140877 A TW 101140877A TW I476774 B TWI476774 B TW I476774B
Authority
TW
Taiwan
Prior art keywords
transistor
control
electrically connected
pull
signal
Prior art date
Application number
TW101140877A
Other languages
Chinese (zh)
Other versions
TW201419290A (en
Inventor
Wei Li Lin
Che Wei Tung
Chun Huan Chang
shu fang Hou
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW101140877A priority Critical patent/TWI476774B/en
Priority to CN201310019520.2A priority patent/CN103151076B/en
Publication of TW201419290A publication Critical patent/TW201419290A/en
Application granted granted Critical
Publication of TWI476774B publication Critical patent/TWI476774B/en

Links

Landscapes

  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)

Description

移位暫存器Shift register

本發明係關於一種移位暫存器,特別是一種應用於光感應觸控面板之移位暫存器。The invention relates to a shift register, in particular to a shift register applied to a light-sensing touch panel.

目前顯示面板的設計趨勢為將閘極驅動電路中的移位暫存器整合在顯示面板上以代替外接的驅動晶片,以減少製造程序及提高顯示面板的積集度,降低製作成本。At present, the design trend of the display panel is to integrate the shift register in the gate driving circuit on the display panel to replace the external driving chip, thereby reducing the manufacturing process, increasing the integration of the display panel, and reducing the manufacturing cost.

由於一般移位暫存器中的每一級移位暫存電路只單輸出一個閘極訊號,以驅動一般顯示面板的畫素陣列。然而若在顯示面板加入光感應觸控功能後所形成的光感應觸控面板,除了需要接收來自於移位暫存電路的閘極訊號外,還需要接收不同於閘極訊號的另一訊號以正常動作,換言之,需接收來自於移位暫存電路的兩個不同脈波寬度的雙輸出訊號。若以外接驅動晶片提供另一訊號予光感應觸控面板,則上述整合移位暫存器在顯示面板上的優點便無法延伸到光感應觸控面板上。Since each stage of the shift register circuit in the general shift register only outputs one gate signal to drive the pixel array of the general display panel. However, if the light-sensing touch panel formed after the light-sensing touch function is added to the display panel, in addition to receiving the gate signal from the shift temporary storage circuit, another signal different from the gate signal needs to be received. Normal operation, in other words, receiving two output signals from two different pulse widths of the shift register circuit. If the external driving chip provides another signal to the light sensing touch panel, the advantages of the integrated shift register on the display panel cannot be extended to the light sensing touch panel.

是以,習知技術亦有發展出可提供兩個不同脈波寬度之雙輸出訊號的移位暫存器,這種類型的移位暫存器至少包含驅動電路及下拉電路且驅動電路,以根據驅動訊號提供兩個不同脈波寬度的雙輸出訊號,即閘極訊號及感測訊號。然而由於在驅動電路中只接收單一高頻時脈訊號,並無接收其他相繼而來的高頻時脈訊號,所以感測訊號將處於浮接(floating)狀態。浮接狀態的感測訊號若發生製程的偏移時,將有嚴重漏電現象,且此處於浮接狀態的 感測訊號也易受其他訊號之干擾。Therefore, the prior art also develops a shift register that can provide two output signals of different pulse widths. This type of shift register includes at least a driving circuit and a pull-down circuit and a driving circuit to According to the driving signal, two dual output signals of different pulse widths, namely gate signal and sensing signal, are provided. However, since only a single high frequency clock signal is received in the driving circuit and no other high frequency clock signals are received, the sensing signal will be in a floating state. If the sensing signal in the floating state is offset from the process, there will be a serious leakage phenomenon, and here in the floating state The sensing signal is also susceptible to interference from other signals.

本發明的實施例揭露一種具有複數級移位暫存電路之移位暫存器。此第N級移位暫存電路包含驅動單元、第一下拉單元、及主下拉單元。驅動單元用以根據第N級驅動訊號以及多個高頻時脈訊號提供第N級主閘極訊號及第N級次閘極訊號。其中驅動單元包含第一電晶體、第二電晶體、及多個開關單元。第一電晶體具有用以接收第N級驅動訊號的控制端、用以接收第一高頻時脈訊號的第一端、及用以提供第N級主閘極訊號的第二端。第二電晶體具有電性連接於第一電晶體之控制端的控制端、第一端、及用以提供第N級次閘極訊號的第二端。多個開關單元具有接收對應之k個高頻時脈訊號之第一端及與第二電晶體之第一端電性連接之第二端。第一下拉單元電性連接於驅動單元,用以下拉第N級驅動訊號、第N級主閘極訊號及第N級次閘極訊號。主下拉單元電性連接於驅動單元中第一電晶體之控制端及第二電晶體之第二端,用以根據第N+k級主閘極訊號下拉第一電晶體之控制端的電位及第二電晶體之第二端的電位。其中第N級主閘極訊號及第N級次閘極訊號的脈衝寬度相異。Embodiments of the present invention disclose a shift register having a complex stage shift register circuit. The Nth stage shift register circuit includes a driving unit, a first pull down unit, and a main pull down unit. The driving unit is configured to provide an Nth primary gate signal and an Nth secondary gate signal according to the Nth driving signal and the plurality of high frequency clock signals. The driving unit includes a first transistor, a second transistor, and a plurality of switching units. The first transistor has a control end for receiving the Nth stage driving signal, a first end for receiving the first high frequency clock signal, and a second end for providing the Nth stage main gate signal. The second transistor has a control end electrically connected to the control end of the first transistor, a first end, and a second end for providing an Nth-order secondary gate signal. The plurality of switching units have a first end receiving the corresponding k high frequency clock signals and a second end electrically connected to the first end of the second transistor. The first pull-down unit is electrically connected to the driving unit for pulling down the Nth driving signal, the Nth main gate signal and the Nth secondary gate signal. The main pull-down unit is electrically connected to the control end of the first transistor in the driving unit and the second end of the second transistor for pulling down the potential of the control end of the first transistor according to the N+k-level main gate signal and The potential of the second end of the second transistor. The pulse widths of the Nth primary gate signal and the Nth secondary gate signal are different.

本發明整合閘極驅動電路中的移位暫存器在光感應觸控面板上,且第N級移位暫存電路可產生兩個不同脈波寬度的輸出訊號,用以提供光感應觸控面板所需的訊號,不需要外接驅動晶片,因而減少光感應觸控面板的製造程序及提高積集度,亦即將閘極驅動電路中的移位暫存器整合於光感應觸控面板,故可於光感應 觸控面板的周圍讓出空間以達窄邊框之效果,減少工序並降低製作成本。The shift register in the integrated gate driving circuit of the present invention is on the light sensing touch panel, and the Nth stage shift register circuit can generate two different pulse width output signals for providing the light sensing touch. The signal required by the panel does not require an external driver chip, thereby reducing the manufacturing process of the light-sensitive touch panel and improving the integration degree, and also integrating the shift register in the gate driving circuit into the light-sensing touch panel. Light sensing The space around the touch panel allows the space to be narrowed, reducing the number of processes and reducing manufacturing costs.

以上之關於本發明內容之說明及以下之實施方式之說明係用以示範與解釋本發明之精神與原理,並且提供本發明之專利申請範圍更進一步之解釋。The above description of the present invention and the following description of the embodiments of the present invention are intended to illustrate and explain the spirit and principles of the invention.

以下在實施方式中詳細敘述本發明之詳細特徵以及優點,其內容足以使任何熟習相關技藝者了解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。以下之實施例係進一步詳細說明本發明之觀點,但非以任何觀點限制本發明之範疇。The detailed features and advantages of the present invention are set forth in the Detailed Description of the Detailed Description of the <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> <RTIgt; The objects and advantages associated with the present invention can be readily understood by those skilled in the art. The following examples are intended to describe the present invention in further detail, but are not intended to limit the scope of the invention.

第1A圖為本發明光感應觸控面板100的移位暫存器101及畫素陣列110的示意圖。如第1A圖所示,移位暫存器101包含多級的移位暫存電路102、104、10n。其中,移位暫存器101中的每一級移位暫存電路將輸出兩個閘極訊號以驅動畫素陣列110,例如第N級移位暫存電路10n輸出第N級主閘極訊號G(n)及第N級次閘極訊號S(n)至畫素陣列110。FIG. 1A is a schematic diagram of a shift register 101 and a pixel array 110 of the light-sensitive touch panel 100 of the present invention. As shown in FIG. 1A, the shift register 101 includes a plurality of stages of shift register circuits 102, 104, and 10n. Each stage shift register circuit in the shift register 101 outputs two gate signals to drive the pixel array 110. For example, the Nth stage shift register circuit 10n outputs the Nth stage main gate signal G. (n) and the Nth secondary gate signal S(n) to the pixel array 110.

此光感應觸控面板100的畫素陣列110具有n條主閘極線G(1),G(2),...,G(n)、n條次閘極線S(1),S(2),...,S(n)、m條資料線D(1),D(2),...,D(m)、p條讀出線R(1),R(2),...,R(p)、多個畫素電路112、及多個光感應電路114,其中主閘極線G(1),G(2),...,G(n)係電性連接於多個畫素電路112之第一端及多個光感應電路114之第一 端,次閘極線S(1),S(2),...,S(n)係分別電性連接於每一列之多個光感應電路114之第二端,資料線D(1),D(2),...,D(m)係分別電性連接於每一行之多個畫素電路112之第二端,讀出線R(1),R(2),...,R(p)係分別電性連接於每一行之多個光感應電路114之第三端,且讀出線p的數目實質上不大於主閘極線n的數目。The pixel array 110 of the light-sensitive touch panel 100 has n main gate lines G(1), G(2), ..., G(n), n sub-gate lines S(1), S (2),...,S(n), m data lines D(1), D(2),...,D(m),p read lines R(1),R(2) , ..., R (p), a plurality of pixel circuits 112, and a plurality of light sensing circuits 114, wherein the main gate lines G (1), G (2), ..., G (n) are electrically First connected to the first end of the plurality of pixel circuits 112 and the first of the plurality of light sensing circuits 114 The second and second gate lines S(1), S(2), ..., S(n) are electrically connected to the second ends of the plurality of light sensing circuits 114 of each column, respectively, and the data line D(1) D(2), ..., D(m) are electrically connected to the second ends of the plurality of pixel circuits 112 of each row, respectively, and the readout lines R(1), R(2), ... R(p) is electrically connected to the third ends of the plurality of light sensing circuits 114 of each row, respectively, and the number of readout lines p is substantially no greater than the number of main gate lines n.

第1B圖為本發明對應光感應觸控面板100之畫素電路112及光感應電路114的示意圖。如第1B圖所示,畫素電路112包含一畫素電晶體120及一液晶電容122,此畫素電晶體120之閘極係電性連接於第一級主閘極訊號G(1),而源極係電性連接於第一條資料線D(1)。液晶電容122係電性連接於畫素電晶體120之汲極用以儲存電荷以使液晶能翻轉。光感應電路114包含一光電電晶體132、一讀取電晶體134、及一讀取電容136。此外,一處理單元116具有一放大器140,此放大器140的正端點係電性連接於第一條讀出線R(1)及讀取電晶體134,而負端點係電性連接於參考電壓Vref。光電電晶體132用於接收光信號而導通。第一級主閘極訊號G(1)輸入至光電電晶體132的閘極,而第一級次閘極訊號S(1)輸入至光電電晶體132的源極。電容136所儲存電荷透過光電電晶體132所形成的路徑放電,放電的電流大小決定於光電電晶體132之照光強度及閘極-源極電壓(Vgs)夾壓設定。讀取電晶體134回應第一級主閘極訊號G(1)而開啟,使處理單元116可週期性的偵測讀取電容136的電壓Va變化。處理單元116經由第一條讀出線R(1)及讀取電晶體134,將經過一個畫面週期(frame)放電後之最終讀取電壓Va讀出,處理單元116於讀取週期將讀取電壓Va 的最終值並轉換為輸出電壓Vout輸出,藉由判斷光電電晶體132是否接收到高強度光信號,以判定為光感應狀態。FIG. 1B is a schematic diagram of a pixel circuit 112 and a light sensing circuit 114 corresponding to the light-sensitive touch panel 100 of the present invention. As shown in FIG. 1B, the pixel circuit 112 includes a pixel transistor 120 and a liquid crystal capacitor 122. The gate of the pixel transistor 120 is electrically connected to the first-level main gate signal G(1). The source is electrically connected to the first data line D(1). The liquid crystal capacitor 122 is electrically connected to the drain of the pixel transistor 120 for storing electric charge to enable the liquid crystal to be turned over. The light sensing circuit 114 includes an optoelectronic transistor 132, a read transistor 134, and a read capacitor 136. In addition, a processing unit 116 has an amplifier 140. The positive terminal of the amplifier 140 is electrically connected to the first readout line R(1) and the read transistor 134, and the negative terminal is electrically connected to the reference. Voltage Vref. Photoelectric crystal 132 is used to receive an optical signal and is turned on. The first stage primary gate signal G(1) is input to the gate of the photovoltaic transistor 132, and the first stage gate signal S(1) is input to the source of the photovoltaic transistor 132. The charge stored in the capacitor 136 is discharged through the path formed by the photovoltaic transistor 132. The magnitude of the discharge current is determined by the illumination intensity of the photovoltaic transistor 132 and the gate-source voltage (Vgs) clamping setting. The read transistor 134 is turned on in response to the first stage main gate signal G(1), so that the processing unit 116 can periodically detect the voltage Va of the read capacitor 136. The processing unit 116 reads out the final read voltage Va after one frame period discharge via the first read line R(1) and the read transistor 134, and the processing unit 116 will read during the read cycle. Voltage Va The final value is converted into an output voltage Vout output, which is determined to be a light-sensing state by determining whether the photo-electric crystal 132 receives a high-intensity optical signal.

第2圖為本發明第一實施例的移位暫存電路的示意圖,係表示第1圖中之移位暫存器100的第N級移位暫存電路10n。如第2圖所示,第N級移位暫存電路200包含驅動單元202、第一下拉單元204、第一下拉控制單元206、主下拉單元208、上拉單元210、第二下拉單元212、第二下拉控制單元214及電容216。Fig. 2 is a view showing the shift register circuit of the first embodiment of the present invention, showing the Nth stage shift register circuit 10n of the shift register 100 in Fig. 1. As shown in FIG. 2, the Nth stage shift register circuit 200 includes a driving unit 202, a first pull-down unit 204, a first pull-down control unit 206, a main pull-down unit 208, a pull-up unit 210, and a second pull-down unit. 212, a second pull-down control unit 214 and a capacitor 216.

驅動單元202用以接收並根據第N級驅動訊號Q(n)、第一高頻時脈訊號HC1以及第二高頻時脈訊號HC2,以提供第N級主閘極訊號G(n)及第N級次閘極訊號S(n)。第一下拉控制單元206用以根據第N級驅動訊號Q(n)及第一低頻時脈訊號LC1產生第一下拉控制訊號K(n)。The driving unit 202 is configured to receive and according to the Nth driving signal Q(n), the first high frequency clock signal HC1, and the second high frequency clock signal HC2, to provide the Nth main gate signal G(n) and The Nth secondary gate signal S(n). The first pull-down control unit 206 is configured to generate a first pull-down control signal K(n) according to the N-th driving signal Q(n) and the first low-frequency clock signal LC1.

第一下拉單元204電性連接於驅動單元202及第一下拉控制單元206,用以根據第一下拉控制訊號K(n)下拉第N級驅動訊號Q(n)、第N級主閘極訊號G(n)及第N級次閘極訊號S(n)。The first pull-down unit 204 is electrically connected to the driving unit 202 and the first pull-down control unit 206 for pulling down the N-th driving signal Q(n) and the N-th main according to the first pull-down control signal K(n) Gate signal G(n) and Nth gate signal S(n).

主下拉單元208電性連接於驅動單元202,用以根據第N+2級主閘極訊號G(n+2)下拉第N級驅動訊號Q(n)及第N級次閘極訊號S(n)。The main pull-down unit 208 is electrically connected to the driving unit 202 for pulling down the Nth driving signal Q(n) and the Nth secondary gate signal S according to the N+2 main gate signal G(n+2). n).

第二下拉控制單元214用以根據第N級驅動訊號Q(n)及第二低頻時脈訊號LC2產生第二下拉控制訊號P(n)。The second pull-down control unit 214 is configured to generate a second pull-down control signal P(n) according to the N-th driving signal Q(n) and the second low-frequency clock signal LC2.

第二下拉單元212電性連接於驅動單元202及第二下拉控制單元214,用以根據第二下拉控制訊號P(n)下拉第N級驅動訊號Q(n)、第N級主閘極訊號G(n)及第N級次閘極訊號S(n)。The second pull-down unit 212 is electrically connected to the driving unit 202 and the second pull-down control unit 214 for pulling down the N-th driving signal Q(n) and the N-th main gate signal according to the second pull-down control signal P(n) G(n) and the Nth secondary gate signal S(n).

上拉單元210電性連接於驅動單元202,用以根據第N級驅動訊號Q(n)提供第N+1級驅動訊號Q(n+1)予第N+1級移位暫存電路的驅動單元。The pull-up unit 210 is electrically connected to the driving unit 202 for providing the N+1th driving signal Q(n+1) to the N+1th shift temporary storage circuit according to the Nth driving signal Q(n). Drive unit.

驅動單元202包含第一電晶體T1、第二電晶體T2、第五電晶體T5及多個開關單元。在此實施例中,開關單元係由第三電晶體T3及第四電晶體T4所組成。上拉單元210包含第六電晶體T6。主下拉單元208包含第七電晶體T7及第八電晶體T8。第一下拉單元204包含第九電晶體T9、第十電晶體T10及第十一電晶體T11。第一下拉控制單元206包含第十二電晶體T12、第十三電晶體T13、第十四電晶體T14及第十五電晶體T15。第二下拉單元212包含第十六電晶體T16、第十七電晶體T17及第十八電晶體T18。第二下拉控制單元214包含第十九電晶體T19、第二十電晶體T20、第二十一電晶體T21及第二十二電晶體T22。The driving unit 202 includes a first transistor T1, a second transistor T2, a fifth transistor T5, and a plurality of switching units. In this embodiment, the switching unit is composed of a third transistor T3 and a fourth transistor T4. The pull up unit 210 includes a sixth transistor T6. The main pull-down unit 208 includes a seventh transistor T7 and an eighth transistor T8. The first pull-down unit 204 includes a ninth transistor T9, a tenth transistor T10, and an eleventh transistor T11. The first pull-down control unit 206 includes a twelfth transistor T12, a thirteenth transistor T13, a fourteenth transistor T14, and a fifteenth transistor T15. The second pull-down unit 212 includes a sixteenth transistor T16, a seventeenth transistor T17, and an eighteenth transistor T18. The second pull-down control unit 214 includes a nineteenth transistor T19, a twentieth transistor T20, a twenty-first transistor T21, and a twenty-second transistor T22.

第一電晶體T1具有用以接收第N級驅動訊號Q(n)的控制端,用以接收第一高頻時脈訊號HC1的第一端,及用以提供第N級主閘極訊號G(n)的第二端。第二電晶體T2具有電性連接於第一電晶體之控制端的控制端、第一端、及用以提供第N級次閘極訊號S(n)的第二端。第三電晶體T3具有用以接收第一高頻時脈訊號HC1的控制端,電性連接於第三電晶體T3之控制端的第一端,及電性連接於第二電晶體T2之第一端的第二端。第四電晶體T4具有用以接收第二高頻時脈訊號HC2的控制端,電性連接於第四電晶體T4之控制端的第一端,及電性連接於第二電晶體T2之第一端的第二端。第五電晶體T5具有用以接收第N級驅動訊號Q(n) 的控制端,用以接收第一高頻時脈訊號HC1的第一端,及用以輸出一第N級控制訊號ST(n)的第二端。The first transistor T1 has a control terminal for receiving the Nth stage driving signal Q(n) for receiving the first end of the first high frequency clock signal HC1, and for providing the Nth stage main gate signal G The second end of (n). The second transistor T2 has a control end electrically connected to the control end of the first transistor, a first end, and a second end for providing an Nth-order secondary gate signal S(n). The third transistor T3 has a control end for receiving the first high frequency clock signal HC1, a first end electrically connected to the control end of the third transistor T3, and a first end electrically connected to the second transistor T2. The second end of the end. The fourth transistor T4 has a control end for receiving the second high frequency clock signal HC2, a first end electrically connected to the control end of the fourth transistor T4, and a first end electrically connected to the second transistor T2. The second end of the end. The fifth transistor T5 has a signal for receiving the Nth stage driving signal Q(n) The control terminal is configured to receive a first end of the first high frequency clock signal HC1 and a second end to output an Nth level control signal ST(n).

第六電晶體T6具有電性連接於第五電晶體T5之第二端的控制端,電性連接於第一電晶體T1之第二端的第一端,及用以提供第N+1級驅動訊號Q(n+1)的第二端。The sixth transistor T6 has a control end electrically connected to the second end of the fifth transistor T5, electrically connected to the first end of the second end of the first transistor T1, and used to provide the N+1th driving signal The second end of Q(n+1).

第七電晶體T7具有用以接收第N+2級主閘極訊號G(n+2)的控制端,電性連接於第二電晶體T2之第二端的第一端,及用以接收第一低電壓VSS_S的第二端。第八電晶體T8具有電性連接於第七電晶體T7之控制端的控制端,電性連接於第一電晶體T1之控制端的第一端,及用以接收第二低電壓VSS_G的第二端。The seventh transistor T7 has a control end for receiving the N+2 main gate signal G(n+2), is electrically connected to the first end of the second end of the second transistor T2, and is configured to receive the first A second end of the low voltage VSS_S. The eighth transistor T8 has a control end electrically connected to the control end of the seventh transistor T7, electrically connected to the first end of the control end of the first transistor T1, and a second end for receiving the second low voltage VSS_G .

第九電晶體T9具有用以接收第一下拉控制訊號K(n)的控制端,電性連接於第二電晶體T2之第二端的第一端,及用以接收第一低電壓VSS_S的第二端。第十電晶體T10具有電性連接於第九電晶體T9之控制端的控制端,電性連接於第一電晶體T1之第二端的第一端,及用以接收第二低電壓VSS_G的第二端。第十一電晶體T11具有電性連接於第九電晶體T9之控制端的控制端,電性連接於第一電晶體T1之控制端的第一端,及第二端,可電性連接於第一電晶體T1之第二端或第十電晶體T10之第二端。The ninth transistor T9 has a control terminal for receiving the first pull-down control signal K(n), a first end electrically connected to the second end of the second transistor T2, and a first low voltage VSS_S for receiving Second end. The tenth transistor T10 has a control end electrically connected to the control terminal of the ninth transistor T9, electrically connected to the first end of the second end of the first transistor T1, and the second terminal for receiving the second low voltage VSS_G end. The eleventh transistor T11 has a control end electrically connected to the control end of the ninth transistor T9, and is electrically connected to the first end of the control end of the first transistor T1, and the second end is electrically connected to the first end The second end of the transistor T1 or the second end of the tenth transistor T10.

第十二電晶體T12具有用以接收第一低頻時脈訊號LC1的控制端,電性連接於第十二電晶體T12之控制端的第一端,及第二端。第十三電晶體T13具有用以接收第N級驅動訊號Q(n)的控制端,電性連接於第十二電晶體T12之第二端的第一端,及電性連接於第十電晶體T10之第二端的第二端。第十四電晶體T14具有 電性連接於第十二電晶體T12之第二端的控制端,電性連接於第十二電晶體T12之控制端的第一端,及電性連接於第九電晶體T9之控制端的第二端。第十五電晶體T15具有電性連接於第十三電晶體T13之控制端的控制端,電性連接於第十四電晶體T14之第二端的第一端,及電性連接於第十電晶體T10之第二端的第二端。The twelfth transistor T12 has a control end for receiving the first low frequency clock signal LC1, a first end electrically connected to the control end of the twelfth transistor T12, and a second end. The thirteenth transistor T13 has a control end for receiving the Nth stage driving signal Q(n), is electrically connected to the first end of the second end of the twelfth transistor T12, and is electrically connected to the tenth transistor. The second end of the second end of T10. The fourteenth transistor T14 has The control terminal electrically connected to the second end of the twelfth transistor T12 is electrically connected to the first end of the control end of the twelfth transistor T12, and is electrically connected to the second end of the control end of the ninth transistor T9. . The fifteenth transistor T15 has a control end electrically connected to the control end of the thirteenth transistor T13, is electrically connected to the first end of the second end of the fourteenth transistor T14, and is electrically connected to the tenth transistor. The second end of the second end of T10.

第十六電晶體T16具有用以接收第二下拉控制訊號P(n)的控制端,電性連接於第二電晶體T2之第二端的第一端,及用以接收第一低電壓VSS_S的第二端。第十七電晶體T17具有電性連接於第十六電晶體T16之控制端的控制端,電性連接於第一電晶體T1之第二端的第一端,及用以接收第二低電壓VSS_G的第二端。第十八電晶體T18具有電性連接於第十六電晶體T16之控制端的控制端,電性連接於第一電晶體T1之控制端的第一端,及第二端,可電性連接於第一電晶體T1之第二端或第十七電晶體T17之第二端。The sixteenth transistor T16 has a control terminal for receiving the second pull-down control signal P(n), a first end electrically connected to the second end of the second transistor T2, and a first low voltage VSS_S for receiving Second end. The seventeenth transistor T17 has a control end electrically connected to the control end of the sixteenth transistor T16, is electrically connected to the first end of the second end of the first transistor T1, and is configured to receive the second low voltage VSS_G. Second end. The eighteenth transistor T18 has a control end electrically connected to the control end of the sixteenth transistor T16, and is electrically connected to the first end of the control end of the first transistor T1, and the second end is electrically connected to the first end A second end of the transistor T1 or a second end of the seventeenth transistor T17.

第十九電晶體T19具有用以接收第二低頻時脈訊號LC2的控制端,電性連接於第十九電晶體T19之控制端的第一端,及第二端。第二十電晶體T20具有用以接收第N級驅動訊號Q(n)的控制端,電性連接於第十九電晶體T19之第二端的第一端,及電性連接於第十七電晶體T17之第二端的第二端。第二十一電晶體T21具有電性連接於第十九電晶體T19之第二端的控制端,電性連接於第十九電晶體T19之控制端的第一端,及電性連接於第十六電晶體T16之控制端的第二端。第二十二電晶體T22具有電性連接於第二十電晶體T20之控制端的控制端,電性連接於第二十一電 晶體T21之第二端的第一端,及電性連接於第十七電晶體T17之第二端的第二端。The nineteenth transistor T19 has a control end for receiving the second low frequency clock signal LC2, a first end electrically connected to the control end of the nineteenth transistor T19, and a second end. The twentieth transistor T20 has a control end for receiving the Nth stage driving signal Q(n), is electrically connected to the first end of the second end of the nineteenth transistor T19, and is electrically connected to the seventeenth electric The second end of the second end of the crystal T17. The twenty-first transistor T21 has a control end electrically connected to the second end of the nineteenth transistor T19, electrically connected to the first end of the control end of the nineteenth transistor T19, and electrically connected to the sixteenth The second end of the control end of the transistor T16. The twenty-second transistor T22 has a control end electrically connected to the control end of the twentieth transistor T20, and is electrically connected to the second eleventh a first end of the second end of the crystal T21 and a second end electrically connected to the second end of the seventeenth transistor T17.

電容216則電性連接於第一電晶體T1之控制端及第二端之間。上述第一低電壓VSS_S與第二低電壓VSS_G係為小於0伏之電壓準位且第一低電壓VSS_S可高於第二低電壓VSS_G。The capacitor 216 is electrically connected between the control end and the second end of the first transistor T1. The first low voltage VSS_S and the second low voltage VSS_G are voltage levels less than 0 volts and the first low voltage VSS_S may be higher than the second low voltage VSS_G.

第3圖為第2圖的第N級移位暫存電路200的運作時之訊號波形示意圖,其中橫軸t為時間軸。在第3圖中,由上往下的訊號分別為第一高頻時脈訊號HC1、第二高頻時脈訊號HC2、第N-1級主閘極訊號G(n-1)、第N級主閘極訊號G(n)、第N級驅動訊號Q(n)、第N級次閘極訊號S(n)及第N+2級主閘極訊號G(n+2)。第N-1級主閘極訊號G(n-1)可透過第N-1級移位暫存電路的上拉單元T6N-1 電性連接到第N級移位暫存電路200,以提供第N級移位暫存電路200的第N級驅動訊號Q(n)。上述第一高頻時脈訊號HC1及第二高頻時脈訊號HC2的頻率高於第一低頻時脈訊號LC1及第二低頻時脈訊號LC2。第一高頻時脈訊號HC1及第二高頻時脈訊號HC2係為可依順序施加於同一級移位暫存電路的時脈訊號且這些高頻時脈訊號其中之一相位較前一高頻時脈訊號晚。舉例而言,第N級移位暫存電路200可如同第三電晶體T3及第四電晶體T4兩者與第二電晶體T2之電性連接方式,依順序在第四電晶體T4之後串接其他電晶體以依順序接收第一高頻時脈訊號HC1、第二高頻時脈訊號HC2、第三高頻時脈訊號HC3及第四高頻時脈訊號HC4,依此類推。FIG. 3 is a schematic diagram of signal waveforms during operation of the Nth stage shift register circuit 200 of FIG. 2, wherein the horizontal axis t is a time axis. In Fig. 3, the signals from top to bottom are the first high frequency clock signal HC1, the second high frequency clock signal HC2, the N-1th main gate signal G(n-1), the Nth The primary gate signal G(n), the Nth drive signal Q(n), the Nth secondary gate signal S(n), and the N+2 primary gate signal G(n+2). The N-1 stage main gate signal G(n-1) is electrically connected to the Nth stage shift register circuit 200 through the pull-up unit T6 N-1 of the N-1th stage shift register circuit, The Nth stage driving signal Q(n) of the Nth stage shift register circuit 200 is provided. The frequencies of the first high frequency clock signal HC1 and the second high frequency clock signal HC2 are higher than the first low frequency clock signal LC1 and the second low frequency clock signal LC2. The first high frequency clock signal HC1 and the second high frequency clock signal HC2 are clock signals that can be sequentially applied to the same stage shift register circuit and one of the high frequency clock signals is higher in phase than the previous one. The frequency clock signal is late. For example, the Nth stage shift register circuit 200 can be electrically connected to the second transistor T2 as in the third transistor T3 and the fourth transistor T4, and sequentially after the fourth transistor T4. The other transistors are connected to receive the first high frequency clock signal HC1, the second high frequency clock signal HC2, the third high frequency clock signal HC3 and the fourth high frequency clock signal HC4, and so on.

如第3圖所示,於t1時段,第N-1級主閘極訊號G(n-1)由低 電位切換至高電位,由於第N-1級主閘極訊號G(n-1)可透過第N-1級移位暫存電路的上拉單元T6N-1 電性連接到第N級移位暫存電路200的第一電晶體T1之控制端,所以電容216會充電使第N級驅動訊號Q(n)上昇至第一高電位VH1,並據以導通第一電晶體T1、第二電晶體T2及第五電晶體T5,以及導通第二十電晶體T20、第二十二電晶體T22、第十三電晶體T13、及第十五電晶體T15,進而下拉第一下拉控制訊號K(n)及第二下拉控制訊號P(n)至第二低電壓VSS_G以截止第十六電晶體T16、第十七電晶體T17、第十八電晶體T18、第九電晶體T9、第十電晶體T10及第十一電晶體T11。As shown in Fig. 3, during the t1 period, the N-1th main gate signal G(n-1) is switched from a low potential to a high potential, since the N-1th main gate signal G(n-1) can be The pull-up unit T6 N-1 through the N-1th stage shift register circuit is electrically connected to the control terminal of the first transistor T1 of the Nth stage shift register circuit 200, so the capacitor 216 is charged to make the Nth The stage driving signal Q(n) rises to the first high potential VH1, and turns on the first transistor T1, the second transistor T2 and the fifth transistor T5, and turns on the twentieth transistor T20, the twenty-second The transistor T22, the thirteenth transistor T13, and the fifteenth transistor T15 further pull down the first pull-down control signal K(n) and the second pull-down control signal P(n) to the second low voltage VSS_G to cut off Sixteenth transistor T16, seventeenth transistor T17, eighteenth transistor T18, ninth transistor T9, tenth transistor T10 and eleventh transistor T11.

接著於t2時段,第N-1級主閘極訊號G(n-1)由高電位切換至低電位,可使第N-1級移位暫存電路的上拉單元的第六電晶體T6N-1 截止,因此第N-1級主閘極訊號G(n-1)的低電位無法經由第N-1級移位暫存電路的上拉單元的第六電晶體T6N-1 改變第N級驅動訊號Q(n)。此時第一高頻時脈訊號HC1由低電位切換至高電位,透過電容216的耦合作用將第N級驅動訊號Q(n)由第一高電位VH1上拉至第二高電位VH2,將具有高電位的第一高頻時脈訊號HC1輸出為第N級主閘極訊號G(n),以及將具有高電位的第一高頻時脈訊號HC1輸出至第五電晶體T5的第二端以導通第三電晶體T3及第六電晶體T6。第N級主閘極訊號G(n)可透過第六電晶體T6輸出第N+1級驅動訊號Q(n+1)至第N+1級移位暫存電路。具有高電位第一高頻時脈訊號HC1透過第三電晶體T3及第二電晶體T2輸出一具有第三高電位VH3的第N級次閘極訊號 S(n)。Then, in the period t2, the N-1th main gate signal G(n-1) is switched from a high potential to a low potential, so that the sixth transistor T6 of the pull-up unit of the N-1th stage shift register circuit can be made. N-1 is turned off, so the low potential of the N-1th main gate signal G(n-1) cannot be changed via the sixth transistor T6 N-1 of the pull-up unit of the N-1th stage shift register circuit. The Nth stage drive signal Q(n). At this time, the first high frequency clock signal HC1 is switched from a low potential to a high potential, and the coupling of the capacitor 216 pulls the Nth stage driving signal Q(n) from the first high potential VH1 to the second high potential VH2, which will have The high-frequency first high-frequency clock signal HC1 outputs an N-th stage main gate signal G(n), and outputs a first high-frequency clock signal HC1 having a high potential to the second end of the fifth transistor T5. The third transistor T3 and the sixth transistor T6 are turned on. The Nth main gate signal G(n) can output the N+1th driving signal Q(n+1) to the N+1th shift temporary storage circuit through the sixth transistor T6. The first high frequency clock signal HC1 having a high potential outputs a Nth-order secondary gate signal S(n) having a third high potential VH3 through the third transistor T3 and the second transistor T2.

於t3時段,第一高頻時脈訊號HC1由高電位切換至低電位,透過電容216的耦合作用將第N級驅動訊號Q(n)由第二高電位VH2再度下拉至第一高電位VH1,使第N級主閘極訊號G(n)以及第五電晶體T5的第二端下降為低電位,以截止第三電晶體T3。截止後的第三電晶體T3隔絕了低電位的第一高頻訊號HC1,但此時第二高頻訊號HC2由低電位切換至高電位,將透過第四電晶體T4及第二電晶體T2輸出一具有第四高電位VH4的第N級次閘極訊號S(n),所以第N級次閘極訊號S(n)處於充電狀態。如此,第N級次閘極訊號S(n)在t3時段不會隨著第一高頻時脈訊號HC1的變化下降為低電位而可維持於第四高電位VH4,第四高電位VH4可高於第三高電位VH3。During the t3 period, the first high frequency clock signal HC1 is switched from a high potential to a low potential, and the coupling of the capacitor 216 causes the Nth stage driving signal Q(n) to be pulled down again from the second high potential VH2 to the first high potential VH1. The Nth main gate signal G(n) and the second end of the fifth transistor T5 are lowered to a low potential to turn off the third transistor T3. The third transistor T3 after the cutoff isolates the low-frequency first high-frequency signal HC1, but at this time, the second high-frequency signal HC2 is switched from a low potential to a high potential, and is output through the fourth transistor T4 and the second transistor T2. The Nth secondary gate signal S(n) having the fourth high potential VH4, so the Nth secondary gate signal S(n) is in a charged state. In this way, the Nth secondary gate signal S(n) does not fall to a low potential with the change of the first high frequency clock signal HC1 during the t3 period, and can be maintained at the fourth high potential VH4, and the fourth high potential VH4 can be Higher than the third high potential VH3.

直到t4時段,第N+2級主閘極訊號G(n+2)由低電位切換至高電位,使第七電晶體T7及第八電晶體T8導通,才下拉第N級驅動訊號Q(n)及第N級次閘極訊號S(n)。由於第一高頻時脈訊號HC1及第二高頻時脈訊號HC2為具有相同脈波寬度且可為依順序施加於第N級移位暫存電路200的高頻時脈訊號。所以本實施例中,第N級次閘極訊號S(n)維持在高電位的時間較第N級主閘極訊號G(n)維持在高電位的時間多一個高頻時脈訊號脈寬的時間,但本發明不限於此,凡可輸出兩個或兩個以上脈寬不同的輸出訊號均屬本發明之範圍。Until the time period t4, the N+2 main gate signal G(n+2) is switched from the low potential to the high potential, and the seventh transistor T7 and the eighth transistor T8 are turned on, and the Nth stage driving signal Q(n) is pulled down. And the Nth secondary gate signal S(n). The first high frequency clock signal HC1 and the second high frequency clock signal HC2 are high frequency clock signals having the same pulse width and can be sequentially applied to the Nth stage shift register circuit 200. Therefore, in this embodiment, the time when the Nth secondary gate signal S(n) is maintained at a high potential is higher than the temperature at which the Nth primary gate signal G(n) is maintained at a high potential. Time, but the invention is not limited thereto, and any output signal that can output two or more different pulse widths is within the scope of the invention.

上述實施例中,第N級次閘極訊號S(n)維持在高電位的時間較第N級主閘極訊號G(n)維持在高電位的時間長。因此整合在光 感應觸控面板的第N級移位暫存電路200的驅動單元202可輸出兩個脈寬不同的輸出訊號,即脈寬相異的第N級次閘極訊號S(n)及第N級主閘極訊號G(n),用以提供光感應觸控面板。In the above embodiment, the time when the Nth-level secondary gate signal S(n) is maintained at the high potential is longer than the time when the N-th stage main gate signal G(n) is maintained at the high potential. So integrated in light The driving unit 202 of the Nth stage shift register circuit 200 of the inductive touch panel can output two output signals with different pulse widths, that is, the Nth level gate signal S(n) and the Nth stage with different pulse widths. The main gate signal G(n) is used to provide a light-sensitive touch panel.

第4圖為本發明第二實施例之第N級移位暫存電路400的示意圖。第N級移位暫存電路400與第2圖之第N級移位暫存電路200之電路連接關係大致上相同,值得一提的是第4圖中上拉單元410的連接關係與第2圖不同,亦即上拉單元410的第六電晶體T6,具有用以接收第N-1級主閘極訊號G(n-1)的控制端,電性連接於第六電晶體T6之控制端的第一端,及電性連接於第一電晶體T1之控制端的第二端。本實施例中,第N-1級主閘極訊號G(n-1)可透過第N級移位暫存電路400的上拉單元410電性連接到第N級移位暫存電路400的第一電晶體T1之控制端,以提供第N級移位暫存電路400的第N級驅動訊號Q(n)。其餘第N級移位暫存電路400的驅動單元202、第一下拉單元204、第一下拉控制單元206、主下拉單元208、第二下拉單元212、第二下拉控制單元214及電容216的結構、驅動方式及訊號輸出均和第2至3圖及前一實施例所述相似,在此不再贅述。4 is a schematic diagram of an Nth stage shift register circuit 400 according to a second embodiment of the present invention. The circuit connection relationship between the Nth stage shift register circuit 400 and the Nth stage shift register circuit 200 of FIG. 2 is substantially the same, and it is worth mentioning that the connection relationship of the pull-up unit 410 in FIG. 4 is the second. The figure is different, that is, the sixth transistor T6 of the pull-up unit 410 has a control terminal for receiving the N-1th main gate signal G(n-1), and is electrically connected to the sixth transistor T6. The first end of the end is electrically connected to the second end of the control end of the first transistor T1. In this embodiment, the N-1th main gate signal G(n-1) is electrically connected to the Nth stage shift register circuit 400 through the pull-up unit 410 of the Nth stage shift register circuit 400. The control terminal of the first transistor T1 provides the Nth stage driving signal Q(n) of the Nth stage shift register circuit 400. The driving unit 202, the first pull-down unit 204, the first pull-down control unit 206, the main pull-down unit 208, the second pull-down unit 212, the second pull-down control unit 214, and the capacitor 216 of the remaining Nth stage shift register circuit 400 The structure, the driving method, and the signal output are similar to those described in FIGS. 2 to 3 and the previous embodiment, and are not described herein again.

第5圖為本發明第三實施例之第N級移位暫存電路500的示意圖。第N級移位暫存電路500與第2圖之第N級移位暫存電路200之電路連接關係大致上相同,唯一不同的是第5圖中驅動單元502中的開關單元具有k個開關單元如同第三電晶體T3及第四電晶體T4兩者與第二電晶體T2之電性連接方式,依順序在第四電 晶體T4之後串接共k個電晶體以依順序接收時脈訊號第一高頻時脈訊號HC1、第二高頻時脈訊號HC2、第三高頻時脈訊號HC3、第四高頻時脈訊號HC4,…至第k個高頻時脈訊號HCk,且全部的高頻時脈訊號的脈波寬度係為每一個不具重疊脈波寬度的高頻時脈訊號脈波寬度總合,且第七電晶體T7與第八電晶體T8具有用以接收第N+k級主閘極訊號G(n+k)的控制端。於本實施例中,由於驅動單元502耦接具有分別連接於k的高頻時脈訊號之k個電晶體使得輸出的次閘極訊號S(n)亦具有k個高頻時脈訊號寬度。其餘第N級移位暫存電路500的第一下拉單元204、第一下拉控制單元206、主下拉單元208、上拉單元210、第二下拉單元212、第二下拉控制單元214及電容216的結構、工作方式及訊號輸出均和第2至3圖及第一實施例所述相似,在此不再贅述,k係為不小於2的自然數。FIG. 5 is a schematic diagram of an Nth stage shift register circuit 500 according to a third embodiment of the present invention. The circuit connection relationship between the Nth stage shift register circuit 500 and the Nth stage shift register circuit 200 of FIG. 2 is substantially the same, the only difference is that the switch unit in the drive unit 502 in FIG. 5 has k switches. The unit is electrically connected to the second transistor T3 and the fourth transistor T4, and is sequentially connected to the second transistor T2. A total of k transistors are serially connected after the crystal T4 to sequentially receive the first high frequency clock signal HC1, the second high frequency clock signal HC2, the third high frequency clock signal HC3, and the fourth high frequency clock. The signal HC4, ... to the kth high frequency clock signal HCk, and the pulse width of all the high frequency clock signals is the sum of the pulse widths of the high frequency clock signals without overlapping pulse widths, and The seven transistor T7 and the eighth transistor T8 have control terminals for receiving the N+kth main gate signal G(n+k). In this embodiment, the driving unit 502 is coupled to k transistors having high frequency clock signals respectively connected to k such that the output secondary gate signal S(n) also has k high frequency clock signal widths. The first pull-down unit 204, the first pull-down control unit 206, the main pull-down unit 208, the pull-up unit 210, the second pull-down unit 212, the second pull-down control unit 214, and the capacitor of the remaining Nth stage shift register circuit 500 The structure, working mode and signal output of 216 are similar to those described in FIGS. 2 to 3 and the first embodiment, and will not be described herein. k is a natural number not less than 2.

本發明整合閘極驅動電路中的移位暫存器在光感應觸控面板上,且第N級移位暫存電路可產生兩個不同脈波寬度輸出訊號,用以提供光感應觸控面板所需的訊號,不需要外接驅動晶片,因而可減少光感應觸控面板的製造程序及提高積集度,亦即將閘極驅動電路中的移位暫存器整合於光感應觸控面板,故可於光感應觸控面板的周圍讓出空間以達窄邊框之效果,減少工序並降低製作成本。The shift register in the integrated gate driving circuit of the present invention is on the light sensing touch panel, and the Nth stage shift register circuit can generate two different pulse width output signals for providing the light sensing touch panel. The required signal does not require an external driver chip, thereby reducing the manufacturing process and improving the integration of the light-sensitive touch panel, and also integrating the shift register in the gate drive circuit into the light-sensing touch panel. The space can be made around the light-sensing touch panel to achieve a narrow border effect, reducing the number of processes and reducing the manufacturing cost.

雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。在不脫離本發明之精神和範圍內,所為之更動與潤飾,均 屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. Modifications and refinements are made without departing from the spirit and scope of the present invention. It belongs to the patent protection scope of the present invention. Please refer to the attached patent application for the scope of protection defined by the present invention.

100‧‧‧光感應觸控面板100‧‧‧Light-sensitive touch panel

101‧‧‧移位暫存器101‧‧‧Shift register

102‧‧‧第一級移位暫存電路102‧‧‧First stage shift register circuit

104‧‧‧第二級移位暫存電路104‧‧‧Second stage shift register circuit

10n、200、400、500‧‧‧第N級移位暫存電路10n, 200, 400, 500‧‧‧Nth stage shift register circuit

110‧‧‧畫素陣列110‧‧‧ pixel array

112‧‧‧畫素電路112‧‧‧pixel circuit

114‧‧‧光感應電路114‧‧‧Light sensing circuit

116‧‧‧處理單元116‧‧‧Processing unit

202‧‧‧驅動單元202‧‧‧ drive unit

204‧‧‧第一下拉單元204‧‧‧First pulldown unit

206‧‧‧第一下拉控制單元206‧‧‧First pull-down control unit

208‧‧‧主下拉單元208‧‧‧Main drop-down unit

210、410‧‧‧上拉單元210, 410‧‧‧ Pull-up unit

212‧‧‧第二下拉單元212‧‧‧Secondary pull-down unit

214‧‧‧第二下拉控制單元214‧‧‧Second pull-down control unit

216‧‧‧電容216‧‧‧ Capacitance

Q(n)‧‧‧第N級驅動訊號Q(n)‧‧‧N-level drive signal

Q(n+1)‧‧‧第N+1級驅動訊號Q(n+1)‧‧‧N+1 level drive signal

G(1)‧‧‧第一級主閘極訊號G(1)‧‧‧first-level main gate signal

G(n)‧‧‧第N級主閘極訊號G(n)‧‧‧Nth primary gate signal

G(n+2)‧‧‧第N+2級主閘極訊號G(n+2)‧‧‧N+2 main gate signal

G(n+k)‧‧‧第N+k級主閘極訊號G(n+k)‧‧‧N+k level main gate signal

G(n-1)‧‧‧第N-1級主閘極訊號G(n-1)‧‧‧N-1 main gate signal

S(1)‧‧‧第一級次閘極訊號S(1)‧‧‧First-level secondary gate signal

S(n)‧‧‧第N級次閘極訊號S(n)‧‧‧Nth secondary gate signal

ST(n)‧‧‧第N級控制訊號ST(n)‧‧‧N level control signal

K(n)‧‧‧第一下拉控制訊號K(n)‧‧‧First pulldown control signal

P(n)‧‧‧第二下拉控制訊號P(n)‧‧‧second pulldown control signal

HC1‧‧‧第一高頻時脈訊號HC1‧‧‧ first high frequency clock signal

HC2‧‧‧第二高頻時脈訊號HC2‧‧‧Second high frequency clock signal

HC3‧‧‧第三高頻時脈訊號HC3‧‧‧ third high frequency clock signal

HC4‧‧‧第四高頻時脈訊號HC4‧‧‧ fourth high frequency clock signal

HCk‧‧‧第k個高頻時脈訊號HCk‧‧‧ kth high frequency clock signal

LC1‧‧‧第一低頻時脈訊號LC1‧‧‧ first low frequency clock signal

LC2‧‧‧第二低頻時脈訊號LC2‧‧‧ second low frequency clock signal

VSS_S‧‧‧第一低電壓VSS_S‧‧‧ first low voltage

VSS_G‧‧‧第二低電壓VSS_G‧‧‧ second low voltage

VH1‧‧‧第一高電位VH1‧‧‧ first high potential

VH2‧‧‧第二高電位VH2‧‧‧ second high potential

VH3‧‧‧第三高電位VH3‧‧‧ third high potential

VH4‧‧‧第四高電位VH4‧‧‧ fourth high potential

t‧‧‧時間軸T‧‧‧ timeline

t1、t2、t3、t4‧‧‧時段T1, t2, t3, t4‧‧‧

T1-T24、…、Tk‧‧‧電晶體T1-T24,...,Tk‧‧‧O crystal

G(1)、G(2)、…、G(n)‧‧‧主閘極線G(1), G(2),..., G(n)‧‧‧ main gate line

S(1)、S(2)、…、S(n)‧‧‧次閘極線S(1), S(2), ..., S(n) ‧ ‧ gate lines

D(1)、D(2)、…、D(m)‧‧‧資料線D(1), D(2), ..., D(m)‧‧‧ data lines

R(1)、R(2)、…、R(p)‧‧‧讀出線R(1), R(2), ..., R(p)‧‧‧ readout lines

120‧‧‧畫素電晶體120‧‧‧pixel crystal

122‧‧‧液晶電容122‧‧‧Liquid Crystal Capacitor

132‧‧‧光電電晶體132‧‧‧Photoelectric crystal

134‧‧‧讀取電晶體134‧‧‧Reading the crystal

136‧‧‧讀取電容136‧‧‧Read capacitance

140‧‧‧放大器140‧‧‧Amplifier

Va‧‧‧讀取電壓Va‧‧‧ reading voltage

Vgs‧‧‧閘極-源極電壓Vgs‧‧‧ gate-source voltage

Vout‧‧‧輸出電壓Vout‧‧‧ output voltage

Vref‧‧‧參考電壓Vref‧‧‧reference voltage

第1A圖為本發明光感應觸控面板的移位暫存器及畫素陣列的示意圖。FIG. 1A is a schematic diagram of a shift register and a pixel array of the light-sensitive touch panel of the present invention.

第1B圖為本發明對應光感應觸控面板之畫素電路及光感應電路的示意圖。FIG. 1B is a schematic diagram of a pixel circuit and a light sensing circuit corresponding to the light-sensitive touch panel of the present invention.

第2圖為本發明第一實施例的第N級移位暫存電路的示意圖。2 is a schematic diagram of an Nth stage shift temporary storage circuit according to the first embodiment of the present invention.

第3圖為第2圖的第N級移位暫存電路運作時之訊號波形示意圖。Fig. 3 is a schematic diagram showing the waveform of the signal when the Nth stage shift register circuit of Fig. 2 operates.

第4圖為本發明第二實施例的第N級移位暫存電路的示意圖。4 is a schematic diagram of an Nth stage shift temporary storage circuit according to a second embodiment of the present invention.

第5圖為本發明第三實施例之第N級移位暫存電路的示意圖。FIG. 5 is a schematic diagram of an Nth stage shift temporary storage circuit according to a third embodiment of the present invention.

200‧‧‧第N級移位暫存電路200‧‧‧Nth stage shift register circuit

202‧‧‧驅動單元202‧‧‧ drive unit

204‧‧‧第一下拉單元204‧‧‧First pulldown unit

206‧‧‧第一下拉控制單元206‧‧‧First pull-down control unit

208‧‧‧主下拉單元208‧‧‧Main drop-down unit

210‧‧‧上拉單元210‧‧‧Upper unit

212‧‧‧第二下拉單元212‧‧‧Secondary pull-down unit

214‧‧‧第二下拉控制單元214‧‧‧Second pull-down control unit

216‧‧‧電容216‧‧‧ Capacitance

Q(n)‧‧‧第N級驅動訊號Q(n)‧‧‧N-level drive signal

Q(n+1)‧‧‧第N+1級驅動訊號Q(n+1)‧‧‧N+1 level drive signal

G(n)‧‧‧第N級主閘極訊號G(n)‧‧‧Nth primary gate signal

G(n+2)‧‧‧第N+2級主閘極訊號G(n+2)‧‧‧N+2 main gate signal

S(n)‧‧‧第N級次閘極訊號S(n)‧‧‧Nth secondary gate signal

ST(n)‧‧‧第N級控制訊號ST(n)‧‧‧N level control signal

K(n)‧‧‧第一下拉控制訊號K(n)‧‧‧First pulldown control signal

P(n)‧‧‧第二下拉控制訊號P(n)‧‧‧second pulldown control signal

HC1‧‧‧第一高頻時脈訊號HC1‧‧‧ first high frequency clock signal

HC2‧‧‧第二高頻時脈訊號HC2‧‧‧Second high frequency clock signal

LC1‧‧‧第一低頻時脈訊號LC1‧‧‧ first low frequency clock signal

LC2‧‧‧第二低頻時脈訊號LC2‧‧‧ second low frequency clock signal

VSS_S‧‧‧第一低電壓VSS_S‧‧‧ first low voltage

VSS_G‧‧‧第二低電壓VSS_G‧‧‧ second low voltage

T1-T22‧‧‧電晶體T1-T22‧‧‧O crystal

Claims (12)

一種具有複數級移位暫存電路之移位暫存器,其中第N級移位暫存電路包含:一驅動單元,用以根據一第N級驅動訊號以及多個高頻時脈訊號提供一第N級主閘極訊號及一第N級次閘極訊號;一第一下拉單元,電性連接於該驅動單元,用以下拉該第N級驅動訊號、該第N級主閘極訊號及該第N級次閘極訊號;以及一主下拉單元,電性連接於該驅動單元,其中該主下拉單元係電性連接於一第一電晶體之一控制端及一第二電晶體之一第二端,用以根據一第N+k級主閘極訊號下拉該第一電晶體之該控制端的電位及該第二電晶體之該第二端的電位;其中該驅動單元包含:該第一電晶體,具有用以接收該第N級驅動訊號的該控制端、用以接收一第一高頻時脈訊號的一第一端、及用以提供該第N級主閘極訊號的一第二端;該第二電晶體,具有電性連接於該第一電晶體之該控制端的一控制端、一第一端、及用以提供該第N級次閘極訊號的該第二端;以及多個開關單元,該些開關單元具有接收對應之k個高頻時脈訊號之一第一端及與該第二電晶體之該第一端電性連接之一第二端,其中k係為不小於2之正整數且N為 自然數。A shift register having a plurality of stages of shift register circuits, wherein the Nth stage shift register circuit comprises: a driving unit for providing one according to an Nth stage driving signal and a plurality of high frequency clock signals An Nth primary gate signal and an Nth secondary gate signal; a first pulldown unit electrically connected to the driving unit for pulling down the Nth driving signal and the Nth primary gate signal And the Nth secondary gate signal; and a main pull-down unit electrically connected to the driving unit, wherein the main pull-down unit is electrically connected to one of the control terminals of the first transistor and a second transistor a second end, configured to pull down a potential of the control end of the first transistor and a potential of the second end of the second transistor according to an N+k-level main gate signal; wherein the driving unit comprises: the first a transistor having a control terminal for receiving the Nth stage driving signal, a first terminal for receiving a first high frequency clock signal, and a first terminal for providing the Nth stage main gate signal a second end; the second transistor having the control electrically connected to the first transistor a control terminal, a first terminal, and the second terminal for providing the Nth secondary gate signal; and a plurality of switch units having the corresponding k high frequency clock signals a first end and a second end electrically connected to the first end of the second transistor, wherein k is a positive integer not less than 2 and N is Natural number. 如請求項1所述之移位暫存器,其中每一開關單元係為一電晶體,具有一控制端、一第一端以及一第二端,每一開關單元之該控制端與每一開關單元之該第一端電性連接,用以接收對應之該些高頻時脈訊號,每一開關單元之該第二端電性連接於該第二電晶體之該第一端,且該些高頻時脈訊號其中之一相位較前一高頻時脈訊號延遲。The shift register according to claim 1, wherein each switch unit is a transistor having a control end, a first end, and a second end, the control end of each switch unit and each The first end of the switch unit is electrically connected to receive the corresponding high frequency clock signals, and the second end of each switch unit is electrically connected to the first end of the second transistor, and the One of the high frequency clock signals is delayed in phase from the previous high frequency clock signal. 如請求項1所述之移位暫存器,更包括:一上拉單元,電性連接於該驅動單元;及一第一下拉控制單元,電性連接於該第一下拉單元,用以根據該第N級驅動訊號與一第一低頻時脈訊號,產生一第一下拉控制訊號以控制該第一下拉單元之操作;其中該第一下拉單元係電性連接於該第一電晶體之該控制端、該第一電晶體之該第二端及該第二電晶體之該第二端,用以根據該第一下拉控制訊號下拉該第一電晶體之該控制端的電位、該第一電晶體之該第二端的電位及該第二電晶體之該第二端的電位。The shift register according to claim 1, further comprising: a pull-up unit electrically connected to the driving unit; and a first pull-down control unit electrically connected to the first pull-down unit Generating a first pull-down control signal to control operation of the first pull-down unit according to the N-th driving signal and a first low-frequency clock signal; wherein the first pull-down unit is electrically connected to the first The control terminal of the first transistor, the second terminal of the first transistor, and the second terminal of the second transistor are configured to pull down the control terminal of the first transistor according to the first pull-down control signal a potential, a potential of the second end of the first transistor, and a potential of the second end of the second transistor. 如請求項3所述之移位暫存器,其中該第一下拉單元包含:一第九電晶體,該第九電晶體具有接收該第一下拉控制訊號的一控制端、電性連接於該第二電晶體之該第二端的一第一端、及一第二端;一第十電晶體,該第十電晶體具有接收該第一下拉控制訊 號的一控制端、電性連接於該第一電晶體之該第二端的一第一端、及一第二端;以及一第十一電晶體,該第十一電晶體具有接收該第一下拉控制訊號的一控制端、電性連接於該第一電晶體之該控制端的一第一端、及一第二端,其中該第九電晶體的該控制端、該第十電晶體的該控制端、及該第十一電晶體的該控制端係彼此互相電性連接。The shift register according to claim 3, wherein the first pull-down unit comprises: a ninth transistor, the ninth transistor has a control terminal for receiving the first pull-down control signal, and is electrically connected a first end of the second end of the second transistor, and a second end; a tenth transistor, the tenth transistor having the first pull-down control signal a control end electrically connected to a first end of the second end of the first transistor, and a second end; and an eleventh transistor having a first a control terminal of the pull-down control signal, a first end electrically connected to the control end of the first transistor, and a second end, wherein the control end of the ninth transistor, the tenth transistor The control terminal and the control terminal of the eleventh transistor are electrically connected to each other. 如請求項3所述之移位暫存器,其中該第一下拉控制單元包含:一第十二電晶體,該第十二電晶體具有接收該第一低頻時脈訊號的一控制端、電性連接於該第十二電晶體之該控制端的一第一端、及一第二端;一第十三電晶體,該第十三電晶體具有接收該第N級驅動訊號的一控制端、電性連接於該第十二電晶體之該第二端的一第一端、及電性連接於該第十電晶體之該第二端的一第二端;一第十四電晶體,該第十四電晶體具有電性連接於該第十二電晶體之該第二端的一控制端、電性連接於該第十二電晶體之該控制端的一第一端、及電性連接於該第九電晶體之該控制端的一第二端;以及一第十五電晶體,該第十五電晶體具有電性連接於該第十三電晶體之該控制端的一控制端、電性連接於該第十四電晶體之該第二端的一第一端、及電性連接於該第十電晶體之該第二端的一第二端。The shift register according to claim 3, wherein the first pull-down control unit comprises: a twelfth transistor, the twelfth transistor having a control end for receiving the first low frequency clock signal, Electrically connected to a first end and a second end of the control end of the twelfth transistor; a thirteenth transistor having a control end for receiving the Nth stage driving signal a first end electrically connected to the second end of the twelfth transistor, and a second end electrically connected to the second end of the tenth transistor; a fourteenth transistor, the first The fourteenth transistor has a control end electrically connected to the second end of the twelfth transistor, a first end electrically connected to the control end of the twelfth transistor, and electrically connected to the first end a second end of the control terminal of the nine-electrode; and a fifteenth transistor, the fifteenth transistor having a control end electrically connected to the control end of the thirteenth transistor, electrically connected to the a first end of the second end of the fourteenth transistor, and electrically connected to the tenth transistor A second end of the second end. 如請求項1所述之移位暫存器,其中該驅動單元更包括一第五電晶體,具有接收該第N級驅動訊號之一控制端、接收該第一高頻時脈訊號之一第一端及一第二端用以輸出一第N級控制訊號。The shift register according to claim 1, wherein the driving unit further comprises a fifth transistor having a control terminal for receiving the Nth driving signal and receiving the first high frequency clock signal One end and one second end are used to output an Nth level control signal. 如請求項3所述之移位暫存器,其中該上拉單元包括一第六電晶體,具有電性連接於該第五電晶體之該第二端的一控制端、電性連接於該第一電晶體之該第二端的一第一端、及用以提供一第N+1級驅動訊號的一第二端。The shift register of claim 3, wherein the pull-up unit comprises a sixth transistor having a control end electrically connected to the second end of the fifth transistor, electrically connected to the first a first end of the second end of the transistor and a second end for providing an N+1th driving signal. 如請求項3所述之移位暫存器,其中該上拉單元包括一第六電晶體,具有用以接收一第N-1級主閘極訊號的一控制端、電性連接於該第六電晶體之該控制端的一第一端、及電性連接於該第一電晶體之該控制端的一第二端。The shift register of claim 3, wherein the pull-up unit comprises a sixth transistor having a control terminal for receiving an N-1th main gate signal, electrically connected to the first A first end of the control end of the sixth transistor and a second end electrically connected to the control end of the first transistor. 如請求項1所述之移位暫存器,更包括一電容,電性連接於該第一電晶體之該控制端及該第一電晶體之該第二端之間。The shift register of claim 1, further comprising a capacitor electrically connected between the control end of the first transistor and the second end of the first transistor. 如請求項1所述之移位暫存器,更包括:一第二下拉單元,電性連接於該第一電晶體之該控制端、該第一電晶體之該第二端及該第二電晶體之該第二端,用以根據一第二下拉控制訊號下拉該第一電晶體之該控制端的電位、該第一電晶體之該第二端的電位及該第二電晶體之該第二端的電位;以及一第二下拉控制單元,電性連接於該第二下拉單元,用以根據該第N級驅動訊號與一第二低頻時脈訊號,產生該第二 下拉控制訊號。The shift register of claim 1, further comprising: a second pull-down unit electrically connected to the control end of the first transistor, the second end of the first transistor, and the second The second end of the transistor is configured to pull down the potential of the control end of the first transistor, the potential of the second end of the first transistor, and the second of the second transistor according to a second pull-down control signal a potential of the terminal; and a second pull-down control unit electrically connected to the second pull-down unit for generating the second according to the Nth-level driving signal and a second low-frequency clock signal Pull down the control signal. 如請求項10所述之移位暫存器,其中該第二下拉單元包含:一第十六電晶體,該第十六電晶體具有接收該第二下拉控制訊號的一控制端、電性連接於該第二電晶體之該第二端的一第一端、及一第二端;一第十七電晶體,該第十七電晶體具有接收該第二下拉控制訊號的一控制端、電性連接於該第一電晶體之該第二端的一第一端、及一第二端;以及一第十八電晶體,該第十八電晶體具有接收該第二下拉控制訊號的一控制端、電性連接於該第一電晶體之該控制端的一第一端、及一第二端,其中該第十六電晶體的該控制端、該第十七電晶體的該控制端、及該第十八電晶體的該控制端係彼此互相電性連接。The shift register according to claim 10, wherein the second pull-down unit comprises: a sixteenth transistor, the sixteenth transistor has a control end for receiving the second pull-down control signal, and is electrically connected a first end of the second end of the second transistor, and a second end; a seventeenth transistor, the seventeenth transistor having a control terminal for receiving the second pull-down control signal, electrical a first end and a second end connected to the second end of the first transistor; and an eighteenth transistor having a control end for receiving the second pull-down control signal, Electrically connected to a first end of the control end of the first transistor, and a second end, wherein the control end of the sixteenth transistor, the control end of the seventeenth transistor, and the first The control terminals of the eighteenth transistor are electrically connected to each other. 如請求項10所述之移位暫存器,其中該第二下拉控制單元包含:一第十九電晶體,該第十九電晶體具有接收該第二低頻時脈訊號的一控制端、電性連接於該第十九電晶體之該控制端的一第一端、及一第二端;一第二十電晶體,該第二十電晶體具有接收該第N級驅動訊號的一控制端、電性連接於該第十九電晶體之該第二端的一第一端、及電性連接於該第十電晶體之該第二端的一第二端;一第二十一電晶體,該第二十一電晶體具有電性連接於該 第十九電晶體之該第二端的一控制端、電性連接於該第十九電晶體之該控制端的一第一端、及電性連接於該第十六電晶體之該控制端的一第二端;以及一第二十二電晶體,該第二十二電晶體具有電性連接於該第二十電晶體之該控制端的一控制端、電性連接於該第二十一電晶體之該第二端的一第一端、及電性連接於該第十電晶體之該第二端的一第二端。The shift register according to claim 10, wherein the second pull-down control unit comprises: a nineteenth transistor, the nineteenth transistor having a control terminal for receiving the second low frequency clock signal, a first end and a second end of the control terminal of the nineteenth transistor; a twentieth transistor having a control end for receiving the Nth stage driving signal, a first end electrically connected to the second end of the nineteenth transistor, and a second end electrically connected to the second end of the tenth transistor; a second eleven transistor, the first The twenty-one transistor has an electrical connection to the a control end of the second end of the nineteenth transistor, a first end electrically connected to the control end of the nineteenth transistor, and a first end electrically connected to the control end of the sixteenth transistor a second end; and a twenty-two transistor having a control end electrically connected to the control end of the twentieth transistor, electrically connected to the second eleven transistor a first end of the second end and a second end electrically connected to the second end of the tenth transistor.
TW101140877A 2012-11-02 2012-11-02 Shift register TWI476774B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW101140877A TWI476774B (en) 2012-11-02 2012-11-02 Shift register
CN201310019520.2A CN103151076B (en) 2012-11-02 2013-01-18 Shift register

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101140877A TWI476774B (en) 2012-11-02 2012-11-02 Shift register

Publications (2)

Publication Number Publication Date
TW201419290A TW201419290A (en) 2014-05-16
TWI476774B true TWI476774B (en) 2015-03-11

Family

ID=48549085

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101140877A TWI476774B (en) 2012-11-02 2012-11-02 Shift register

Country Status (2)

Country Link
CN (1) CN103151076B (en)
TW (1) TWI476774B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613632B (en) * 2017-02-20 2018-02-01 友達光電股份有限公司 Gate driver

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473059B (en) * 2013-05-28 2015-02-11 Au Optronics Corp Shift register circuit
TWI478132B (en) 2013-06-14 2015-03-21 Au Optronics Corp Gate driver circuit
TWI509592B (en) * 2013-07-05 2015-11-21 Au Optronics Corp Gate driving circuit
TWI493522B (en) * 2013-08-16 2015-07-21 Au Optronics Corp Shift register circuit
CN103680451B (en) * 2013-12-18 2015-12-30 深圳市华星光电技术有限公司 For GOA circuit and the display device of liquid crystal display
TWI523021B (en) * 2014-10-31 2016-02-21 友達光電股份有限公司 Shift register
CN104537987B (en) * 2014-11-25 2017-02-22 深圳市华星光电技术有限公司 Charging scanning and charge sharing scanning dual-output GOA circuit
TWI563513B (en) * 2015-06-03 2016-12-21 Au Optronics Corp Shift register circuit
TWI563514B (en) * 2015-06-05 2016-12-21 Au Optronics Corp Shift register circuit
CN104992663B (en) * 2015-08-05 2017-09-22 京东方科技集团股份有限公司 A kind of shift register cell and gate driving circuit, display panel
TWI617966B (en) * 2017-04-17 2018-03-11 友達光電股份有限公司 Touch panel
CN111508433B (en) * 2020-05-28 2021-08-31 京东方科技集团股份有限公司 Signal generation circuit, signal generation method, signal generation module and display device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1231594A1 (en) * 2001-02-13 2002-08-14 Samsung Electronics Co., Ltd. Shift resister and liquid crystal display using the same
EP1887554A1 (en) * 2006-08-08 2008-02-13 Samsung Electronics Co., Ltd. Gate driver and display apparatus having the same
TW201040816A (en) * 2008-12-24 2010-11-16 Semiconductor Energy Lab Touch panel, display device, and electronic device
EP2369594A1 (en) * 2010-03-24 2011-09-28 AU Optronics Corporation Shift register with low power consumption
US20120027160A1 (en) * 2008-10-31 2012-02-02 Mitsubishi Electric Corporation Shift register circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7310402B2 (en) * 2005-10-18 2007-12-18 Au Optronics Corporation Gate line drivers for active matrix displays
US7529333B2 (en) * 2005-10-27 2009-05-05 Lg Display Co., Ltd. Shift register
CN101369460B (en) * 2008-10-15 2012-08-22 友达光电股份有限公司 Shift buffer
CN101661798B (en) * 2009-09-24 2012-08-29 友达光电股份有限公司 Shift register circuit and method for generating grid signals thereof
CN102054422B (en) * 2010-10-19 2013-04-10 友达光电股份有限公司 Display
TWI439050B (en) * 2010-10-27 2014-05-21 Au Optronics Corp Shift register and touch device
TWI469150B (en) * 2011-09-02 2015-01-11 Au Optronics Corp Shift register circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1231594A1 (en) * 2001-02-13 2002-08-14 Samsung Electronics Co., Ltd. Shift resister and liquid crystal display using the same
EP1887554A1 (en) * 2006-08-08 2008-02-13 Samsung Electronics Co., Ltd. Gate driver and display apparatus having the same
US20120027160A1 (en) * 2008-10-31 2012-02-02 Mitsubishi Electric Corporation Shift register circuit
TW201040816A (en) * 2008-12-24 2010-11-16 Semiconductor Energy Lab Touch panel, display device, and electronic device
EP2369594A1 (en) * 2010-03-24 2011-09-28 AU Optronics Corporation Shift register with low power consumption

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613632B (en) * 2017-02-20 2018-02-01 友達光電股份有限公司 Gate driver

Also Published As

Publication number Publication date
CN103151076A (en) 2013-06-12
TW201419290A (en) 2014-05-16
CN103151076B (en) 2015-10-14

Similar Documents

Publication Publication Date Title
TWI476774B (en) Shift register
WO2018171133A1 (en) Shift register unit, gate driving circuit, and driving method
US9336898B2 (en) Shift register unit, gate driver, and display device
KR102473024B1 (en) Shift register unit, gate driving circuit, display device and driving method
US9734918B2 (en) Shift register and the driving method thereof, gate driving apparatus and display apparatus
US9053678B2 (en) Shift register unit circuit, shift register, array substrate and liquid crystal display
JP6593891B2 (en) Shift register, stage transmission gate driver circuit and display panel
US9437152B2 (en) Scan driving circuit
JP6423957B2 (en) Gate electrode drive circuit based on IGZO manufacturing process
KR101580422B1 (en) Shift register, display apparatus, gate driving circuit, and driving method
CN101866697B (en) Shift register with lower power consumption
JP6423956B2 (en) Gate electrode drive circuit based on IGZO manufacturing process
KR102215791B1 (en) GOA driving circuit and liquid crystal display device
WO2016070543A1 (en) Shift register unit, gate driving circuit and display device
TWI657366B (en) Touch drive unit and driving method thereof, touch drive circuit and touch device
EP2988306A1 (en) Shift register unit, gate drive circuit and display device
CN110120200B (en) Display device
TWI478132B (en) Gate driver circuit
WO2015014026A1 (en) Shift register unit and drive method thereof, gate drive circuit and display device
WO2017128854A1 (en) Shift register and driving method thereof, drive circuit and display device
CN102654984A (en) Shifting register unit and grid driving circuit
CN103646636A (en) Shift register, grid drive circuit and display device
CN110648621B (en) Shift register and driving method thereof, grid driving circuit and display device
CN106098102B (en) Shift register cell, gate driving circuit and display device
CN105427799A (en) Shift register unit, shift register, grid driving circuit and display apparatus