TWI475708B - Methods and apparatus for depositing a uniform silicon film with flow gradient designs - Google Patents

Description

Method and apparatus for depositing uniform enamel film using flow gradient design

Embodiments of the present invention generally relate to a gas distribution plate component in a processing chamber and a method of making the same.

Photovoltaic devices (PV) or solar cells are devices that convert sunlight into direct current (DC) electrical energy. PV or solar cells typically have one or more p-i-n junction regions. Each junction region in the semiconductor material includes two distinct regions, with one side representing the p-type region and the other side representing the n-type region. When the p-i-n junction of a PV cell is exposed to sunlight (composed of light energy), sunlight is directly converted into electricity by the PV effect. A PV solar cell produces a specific amount of electrical energy and the battery is built into a mode of size to deliver a predetermined amount of system energy. The PV mode is formed by joining a plurality of PV solar cells and then joining them in a panel using a specific frame and connector joint.

PV solar cells generally include a photoelectric conversion unit formed on a large transparent substrate. The photoelectric conversion unit includes p-type, intrinsic type (i-type) and n-type germanium layers sequentially deposited on a transparent substrate. The ruthenium film which can be used to form the photoelectric conversion unit may include polycrystalline germanium (polycrystalline germanium), microcrystalline germanium (μ c-Si), and amorphous germanium (a-Si) film. A ruthenium film is typically formed on a transparent substrate by plasma enhanced chemical vapor deposition (PECVD). The PECVD treatment is performed by introducing a precursor gas or a gas mixture into a vacuum chamber including a transparent substrate. The precursor gas or gas mixture is supplied from the distribution plate toward the transparent substrate. An RF energy source is applied to the distribution plate and/or substrate support member in the chamber to form a plasma of the precursor gas or gas mixture, followed by deposition of a layer of tantalum having predetermined film properties on the transparent substrate.

As the demand for larger solar power substrates continues to grow, more and more It is increasingly difficult to maintain a uniform plasma and/or process gas flow during PECVD processing on the surface area of large substrates. The difference in film properties between the center and edge regions of the deposited film presents a significant challenge for producing large and efficient solar cells. With increasing substrate sizes, edge-to-center variations in characteristics have become more unpredictable.

Accordingly, there is a need for an improved apparatus for depositing a uniform film having predetermined properties by chemical vapor deposition processing on a large area substrate.

The present invention provides a method and apparatus for generating a flow rate gradient generated from a gas distribution plate suitable for depositing a tantalum film for solar cell applications. In one embodiment, an apparatus for depositing a film for a solar cell may include a processing chamber, and a quadrangular gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, a first plurality of chokes located at the corners, and a second plurality of chokes formed by the gas distribution plates, along the corner regions a second plurality of chokes on one side of the gas distribution plate, wherein the first plurality of chokes have greater flow resistance than the second plurality of chokes.

In another embodiment, an apparatus for depositing a film for a solar cell may include a processing chamber, and a quadrangular gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed by the gas distribution plates, a first plurality of chokes located at the corners, and a second plurality of chokes formed by the gas distribution plates, between the corner regions a second plurality of chokes on one side of the gas distribution plate, wherein the first plurality of chokes have a longer length than the second plurality of chokes.

In another embodiment, the apparatus for depositing a film for a solar cell may include a processing chamber, and a plurality of through-forming layers deposited in the processing chamber a gas distribution plate of the choke, the choke being arranged to define at least three regions of different flow resistance, wherein the first region defined at the angle of the gas distribution plate has a larger flow than the second region defined along the boundary of the gas distribution plate The resistance, defined in the third region at the center of the gas distribution plate, has a smaller flow resistance than the second region.

In another embodiment, a method of depositing a uniform film for a solar cell in a chamber may include providing a substrate into a chamber having a gas distribution plate facing a substrate supporting member disposed in the chamber; passing the processing gas through the dispensing The angular substrate of the gas plate flows at a flow rate less than a flow rate of the process gas flowing through the center of the gas distribution plate; and a ruthenium film is deposited on the substrate by the process gas.

The present invention provides a method and apparatus for depositing a tantalum film suitable for use in solar cells. In one embodiment, the apparatus includes a gas distribution plate having different choke lengths to create a gas flow gradient to the substrate. The flow gradient created by the gas distribution plate provides flexible control of the edge-to-center distribution of the process gas supplied to the substrate surface through the gas distribution plate. The control gas distribution across the surface of the substrate enhances the ability to adjust the thickness and/or distribution of the film deposited on the substrate. The flow gradients produced by the different choke lengths on the gas distribution plates also provide process control characteristics to facilitate control of membrane property differences over the width of the substrate.

1 is a schematic cross-sectional view of one embodiment of a plasma enhanced chemical vapor deposition (PECVD) chamber 100 in which one or more membranes suitable for fabricating solar cells or other large area devices can be formed. A suitable plasma enhanced vapor deposition chamber can be used from Applied Materials Inc. of Santa Clara, California. It will be appreciated that other deposition chambers including other manufacturers may be utilized to implement the invention. It will also be appreciated that the techniques described herein may be advantageously employed to fabricate other structures or devices.

The chamber 100 generally includes a wall 102 and a bottom 104 that define a processing space 106. The gas distribution plate 110 and the substrate support member 130 are disposed in the processing space 106 to enter and exit the processing space 106 by the flow valve passage 108 formed by the through wall 102, which enables the substrate 140 to enter or exit the chamber 100.

The substrate support member 130 includes a substrate receiving surface 132 for supporting the substrate 140 thereon. Rod 134 couples support member 130 to lift system 136, which lifts and lowers substrate support member 130 between substrate transport and processing positions. When the process prevents deposition on the edge of the substrate 140, the shadow frame 133 may optionally be placed on the edge of the substrate 140. The lift pins 138 are movably disposed through the substrate support members, and the lift pins 138 are used to separate the substrate 140 from the substrate receiving surface to facilitate exchange of the substrate with the robot blades. The substrate support member 130 may also include a heating and/or cooling element 139 that is used to maintain the substrate support member 130 at a predetermined temperature. The substrate support member 130 can also include a ground strap 131 that provides RF ground around the perimeter of the substrate support member 130. An example of a grounding strip is disclosed in U.S. Patent No. 6,024,044, issued to Law et al., issued Jan. 15, 2000, and to U.S. Pat.

The gas distribution plate 110 is coupled to the backing plate 112 at the periphery of the backing plate 112 by a suspension 114. The gas distribution plate 110 can also be coupled to the backing plate 112 by one or more central supports 116 to help prevent sagging of the gas distribution plate 110 and/or control flatness/curvature. In one embodiment, the gas distribution plates 110 can be of different configurations having different sizes. In an exemplary embodiment, the gas distribution plate 110 is a quadrilateral gas distribution plate. The gas distribution plate 110 has an upper surface 198 and a downstream surface 150. Upper surface 198 faces lower surface 196 of backing plate 112. The gas separation back plate 110 includes a plurality of chokes 111 formed through the gas distribution plate 110 and The upper surface 118 of the substrate disposed on the substrate support member 130 is faced. The chokes 111 can have different shapes, numbers, densities, sizes, and distribution across the gas distribution plate 110. The diameter of the choke 111 can be selected between about 0.01 inches and about 1 inch. Gas source 120 is coupled to backing plate 112 to supply gas to a plenum defined between gas distribution plate 110 and backing plate 112. The gas from the gas source 120 flows from the choke 111 formed on the gas distribution plate 110 to the processing space 106.

In one embodiment, the chokes 111 in different regions of the plate 110 have different conductances, thus creating a flow gradient into the processing space 106. The conductance of each choke 111 can be controlled using the length, shape, shape, hole roughness, and/or other properties of the choke 111. Since different conductances of the chokes 111 can allow different volumes of process gas to flow into the process space 106, the resulting flow gradient across the substrate surface 118 can be effectively utilized and a flow gradient can be set to adjust the profile deposited on the substrate surface 118. , film properties and thickness. It has been found that by making the corners of the gas distribution plate 110 have different conductances relative to the edges of the plate 110, the uniformity of the film can be improved.

In one embodiment, different lengths of the choke 111 may be formed by processing a portion of the plate 110 from the upper surface 198 and/or the downstream surface of the plate 110, such that the land is located at the choke 111 of the machined portion. The choke 111 of the non-machined portion has a shorter length. Alternatively, the length of the choke 111 may be formed by one or more holes formed in the center of the choke 111 to produce different channel profiles in the gas distribution plate 110, which will be further described below. Detailed description.

Vacuum pump 109 is coupled to chamber 100 to maintain processing space 106 at a predetermined pressure. The RF power source 122 is coupled to the backing plate 112 and/or the gas distribution plate 110 to provide RF electrical energy to form between the gas distribution plate 110 and the substrate support member 130. The electric field, therefore, can be generated by the gas present between the gas distribution plate 110 and the substrate support member 130. Different RF frequencies can be used, such as frequencies between about 0.3 MHz and about 200 MHz. In one embodiment the RF power source is set to a frequency of 13.56 MHz. An example of a gas distribution plate is disclosed in U.S. Patent No. 6,477,980 issued to White et al. on November 12, 2002, and to U.S. Publication No. 20050251990, issued on Nov. 17, 2005. U.S. Publication No. 2006/0060138 to Keller et al.

A remote plasma source 124, such as an inductively coupled remote plasma source, can also be coupled between the gas source and the backing plate. Between the treated substrates, a cleaning gas can be excited in the remote plasma source 124 to provide a plasma cleaning chamber component that is generated using the distal end. The cleaning gas may also be excited by RF electrical energy supplied to the gas distribution plate 110 by the power source 122. Suitable cleaning gases include, but are not limited to, NF ₃ , F _{2 ,} and SF ₆ . An embodiment of a remote plasma source is disclosed in U.S. Patent No. 5,788,778, issued to A.S.

In one embodiment, the substrate may be processed in the chamber 100 or 140 may have a greater 10,000cm ^2, e.g. 40,000cm ² or more, e.g. 55,000cm ² or a larger area. It will be appreciated that the substrate can be slit after processing to form smaller solar cells or other devices.

In one embodiment, heating and/or cooling elements 139 may be provided to maintain the substrate support elements between about 400 degrees Celsius or less, such as between about 100 degrees Celsius and about 400 degrees Celsius, or between about 150 degrees Celsius and about 300 degrees Celsius during deposition. Between, for example, about 200 degrees Celsius.

The spacing between the upper surface of the substrate disposed on the substrate receiving surface 132 and the gas distribution plate 110 during deposition may be between 400 mils to about 1,200 mils, such as between 400 mils to about 800 mils.

For the deposition of the ruthenium film, a ruthenium-based gas and a hydrogen-based gas are supplied through the gas distribution plate 110. Suitable sulfhydryl gases include, but are not limited to, decane (SiH ₄ ), ethane hydride (Si ₂ H ₆ ), tetrafluoro decane (SiF ₄ ), tetrachloro decane (SiCl ₄ ), and dichloro decane (SiH ₂ Cl ₂ ). And mixtures thereof. Suitable hydrogen-based gases include, but are not limited to, hydrogen (H ₂ ). The p-type dopant of the p-type germanium layer may include a group III element such as boron or aluminum. In one embodiment, boron is used as the p-type dopant. Examples of boron-containing sources include trimethylboron (TMB), diborane (B ₂ H ₆ ), BF ₃ , B(C ₂ H ₅ ) ₃ , BH ₃ , BF _{3 ,} and B(CH ₃ ) ₃ and Similar compound. In another embodiment, TMB is used as the p-type dopant. The n-type dopant of the n-type germanium layer may include a group V element such as phosphorus, arsenic or antimony. Examples of phosphorus containing sources include phosphine and similar compounds. Typically the dopant is a carrier gas such as hydrogen, argon, helium or other suitable compound. In one treatment scheme disclosed herein, the total gas flow rate of the hydrogen-based gas is set. Thus, if a hydrogen-based gas, such as a carrier gas for a dopant, should be subtracted from the total gas flow rate of the hydrogen-based gas, the flow rate of the carrier gas should be determined to determine how much additional hydrogen-based gas should be supplied to the chamber.

2A-C show cross-sectional views of the gas distribution plates at different stages of the manufacturing sequence. The gas distribution plate 110 has an upper surface 198 that faces the backing plate 112 and is opposite the downstream surface 150 that faces the substrate support member 130. In one embodiment, upper surface 198 and downstream surface 150 may be parallel planes. As discussed above, the chokes 111 can have different configurations, shapes, features, and numbers to meet different processing needs. In one embodiment shown in FIG. 2A, the chokes 111, both at the corner portion 224 of the plate 110 and at the edge portion 226, may have straight walls of equal lengths 220, 222. Upper surface 198 and/or downstream surface 150 of plate 110 may be machined or otherwise formed in concave surface 206 relative to lower surface 196 of backing plate 112 and/or upper surface 132 of substrate support member 130. As shown in Figure 2B, in processing In an embodiment where a portion of the upper surface 198 of the plate 110 is removed, a concave surface 206 is created in the plate 110, resulting in a central portion 226 of the plate 110 being thinner than the angular portion 224. In one embodiment, a chord depth 254 between the concave surface 206 and the initial plane (as shown in phantom line 198) may be disposed between about 0.05 inches to about 1 inch. The chord depth 254 formed between the concave surface 206 and the initial plane (as shown in imaginary line 198) is less than the size of the plate 110. In one embodiment, the maximum chord depth 254 can be controlled to be no more than about 3 percent of the inherent length of the panel 110, such as between about 0.1 percent and about 2.0 percent. To compare the chord depth 254 of the rectangular or circular plate 110, the intrinsic length is considered to be the "equivalent radius." For a circular distribution plate, the equivalent radius is equal to the radius of the plate. For square or rectangular plates, the equivalent radius is equal to half the length of the diagonal. In one embodiment of the panel 110 having a size of approximately 2200 mm by 1870 mm, the equivalent radius is approximately 1440 mm and the maximum chord depth 304 is approximately 28.4 mm.

The choke 204 formed at the plate edge portion 226 may have a shorter length 222 (and therefore less resistance) than the length 220 of the choke 250 formed at the corner portion 224. Additionally, the concave surface 206 of the plate 110 can optionally be disposed such that the length of the choke 111 at the edge portion of the plate 110 is greater than the length of the choke adjacent the center of the plate 110. The gradually varying length of the choke produces different flow resistance through the plate 110, thus resulting in different flow rate and/or volume rate characteristics of the process gas flowing into the process space 106 through the gas distribution plate 110. In particular, the choke 110 is provided to reduce the conductance of the plate 110 through the corners at the edges of the opposing plates 110. Different amounts of process gas flowing through the gas distribution plate 110 create a flow gradient in the processing space 106. The gradient can be selected to provide a process control button that adjusts the deposited film profile, properties, film uniformity and thickness, and/or physical properties of the deposited film. Therefore, the use of gas distribution plates can be used to increase the percentage of crystals from the top layer to the edge and edge to the center of the deposited tantalum film. amount.

Flow gradient aids can also be used to adjust the uniformity of the deposited film from center to edge. For example, in one embodiment, where a conventional gas distribution plate film is used, it should be deposited in a generally arched film configuration (e.g., a central portion is thicker than the edge portion), and may be disposed adjacent to the edge portion 226 and the corner portion 226. The shorter length of the choke of the choke in the central portion of the plate 110 adjusts the profile of the film deposited on the substrate to a more even profile. In contrast, in one embodiment, where a conventional gas distribution plate film is used, it should be deposited in a generally concave film shape (for example, a film having a central portion thinner than the edge portion), and a choke device disposed with respect to the adjacent edge portion can be utilized. The choke 250 of the longer length in the center portion.

In another embodiment, the downstream surface 110 of the panel 110 can be machined or otherwise formed with a curved surface 260 relative to the upper surface 132 of the substrate support member 130. The processing removes a portion of the panel 110 from the downstream surface of the panel 110 such that the center of the edge portion 226 of the panel 110 is thinner than the corner portion 224, as shown in Figure 2C. When the plate 110 is installed in the chamber 100, the curved surface 260 of the plate 110 produces a gradually varying distance between the curved surface 260 and the substrate support member 130. In one embodiment, the chord depth 256 produced between the curved surface 260 and the initial plane (as shown in phantom line 198) is between about 0.05 inches and about 1 inch. Since the distance between the downstream curved surface 260 and the substrate support member 130 gradually changes across the substrate support surface 132, the deposition profile of the film can be controlled. The curved upper surface 206 of the plate 110 in combination with the curved downstream surface 260 creates both a flow gradient across the substrate surface and a gradient spacing across the substrate surface during processing, thereby providing enhanced gas and/or plasma distribution across the substrate surface. Control to allow control of the shape, properties, uniformity and thickness of the deposited film.

In one embodiment, the choke 111 has a hollow cathode effect The diameter 258 is selected within the range of the application. During the treatment, plasma is generated to ionize the mixed gas supplied in the chamber. With a selected range of choke diameters, the plasma can be retained in the choke 111 of the gas distribution plate 110, thereby increasing electron emission, electron oscillating motion, and gas ionization, which is the "hollow cathode effect." Other embodiments that select the geometry of the choke 111, for example having a diameter that is less than or greater than providing a hollow cathode effect, are not retained in the choke 111, thus eliminating deleterious over-reaction and/or over-deposition. In one embodiment, the diameter 238 of the choke 111 has a diameter of between about 0.05 inches to about 0.5 inches to produce a predetermined number of hollow cathode effects.

In some embodiments where a hollow cathode effect is undesirable, the diameter 238 of the choke 111 can be selected to be between 0.01 inches and about 0.05 inches. Thus, as shown in FIG. 2B, the chokes 111 formed on the downstream surface 150, and/or the downstream curved surface 260 formed in FIG. 2C, may have different opening shapes to control the hollow cathode effect in the choke 111. The production. The different shapes used to create the hollow cathode effect and/or gradient will be described in more detail with reference to Figures 7-9.

3A-B illustrate cross-sectional views of the gas distribution plate 300 at various stages of the manufacturing process of the gas distribution plate 300 that produces an edge to center flow gradient. Similar to the design of the gas distribution plate 110 described in FIGS. 1 and 2A-C, as shown in FIG. 3A, a plurality of chokes 314 may be formed through the plate 300. The plate 300 is then deformed and/or the plate 300 is machined to form a curved upper surface 306 from the plane of the plate 300 (as shown by the imaginary line 302). This process can also result in the downstream surface 316 of the plate 300 becoming the raised surface 316. Subsequently, the raised surface 316 of the edge portion 310 is machined to form a plane 312 such that the upper surface 306 forms a predetermined convex shape, which causes the edge portion 310 of the plate 300 and the center of the corner portion 308 to have different turbulators 314. Length 318, 320, as shown in Figure 3B Shown. It should be noted that for simplicity, the deformation of the choke 314 produced by the manufacturing process is not depicted in the figures.

Similar to the chokes 111 formed in Figures 1 and 2A-C, the chokes 314 at the corner and edge portions 308, 310 of the plate 300 may have straight walls of equal lengths 320, 318 at the beginning of the manufacturing process. For convenience of explanation, some of the chokes 314 will now be the inner choke 322 and the outer choke 324. The inner choke 322 is located adjacent the center of the edge portion 310 of the plate 300, and the corner choke 324 is located adjacent the corner portion 308 of the plate 300. Since the upper surface 302 is deformed such that the upper surface 302 forms a curved surface 306, the size, length, depth and shape of the choke 314 formed in the plate 300 are also changed by the deformation process. For example, since the downstream surface 312 of the plate 300 is bent to form a convex surface, the choke 322 located at the edge portion 310 of the plate 300 is correspondingly processed, thus causing the length of the choke 322 of the edge portion 310 of the plate 300 to become The length of the choke 324 is smaller than the angle portion 308. Additionally, deformation of the choke 322 created by the curved upper surface 306 by the bending and/or deforming process may also cause the choke 322 to have different lengths of inner and/or inner curvature, thus facilitating gas as it passes through the plate 300. A flow gradient is produced. By defining and calculating a processing and/or bending process, the depth, length, distribution, shape, and density of the choke can be predetermined to create a predetermined gas and/or plasma across the surface of the substrate on the substrate support member 130. Distribution, thus facilitating control of the thickness characteristics and properties of the film deposited on the substrate.

4A-B illustrate cross-sectional views of a gas distribution plate 400 at various stages of the process of fabricating a gas distribution plate 400 having a curved surface. As shown in FIG. 4A, a plurality of chokes 450 can be formed by the plate 400. The plate 400 is deformed to form a curved downstream surface from the plane of the plate 400 (as indicated by the imaginary line surface 418). This process can also cause the upper surface 420 of the panel 400 to become a convex surface 420 that is convex from the plane. Subsequently, the convex surface 420 at the center of the edge portion 430 is processed to be shaped The plane 422, as shown in Fig. 4B, causes the downstream surface 402 to form a predetermined curved shape. It should be noted that for the sake of simplicity, the deformation of the choke 450 produced by the manufacturing process is not depicted in the figures. The chord depth 414 defined between the curved surface 402 and the initial plane (as shown in phantom line 418) is between about 0.05 inches and about 1 inch, thus creating between the curved surface 402 and the facing substrate support member 130. Gradually changing distance.

The choke 450 has first holes 406, 408 and second holes 410, 412 formed on the plate 400. Since the deformation of the plate 400 causes the downstream surface 418 to form a curved surface 402, the size, length and shape of the choke 450 formed in the plate 400 are also altered by the deformation process. In addition, since the processing plate 400 has an upper surface, a portion of the first hole 406 at the center of the edge portion 430 of the plate 400 is removed, so that the length of the first hole 406 at the center of the edge portion 430 of the plate 400 is the first of the center portion 408. The length of the hole 406 is short. Additionally, deformation of the second apertures 410, 412 at the curved surface 402 resulting from the bending process may also result in the second apertures 412, 410 having a tapered inner wall and a different cavity profile, thus creating a hollow cathode effect and/or hollow Cathode gradient (HCG), the hollow cathode gradient creates a gradient of plasma uniformity across the surface of the substrate. The depth, distribution, shape and density of the holes can be selected by a pre-defined and calculated wall processing and/or bending process to create a predetermined gas and/or plasma across the surface of the substrate on the substrate support member 130. The distribution thus deposits a film having predetermined thickness characteristics and film properties on the surface of the substrate.

FIG. 5 illustrates a process flow 500 of one embodiment of a heat treatment for fabricating a gas distribution plate having a curved surface. 6A-B illustrate different stages of fabricating a gas distribution plate having different choke lengths using the heat treatment process 500 illustrated in FIG.

Flow 500 begins by placing a substantially flat gas distribution plate 602 at step 502. The outer bracket 608 and the inner bracket 610 are located in the environment 604. As shown in FIG. 6A, the edge portion 606 of the plate 602 is initially located on the outer bracket 608 and the inner bracket 610 is spaced from the plate 602. Optionally, the outer bracket may only support the corners of the plate 602. The inner bracket 610 and the outer bracket 608 can be formed from a material suitable for use at greater than 500 degrees Celsius. The outer bracket 608 has a height 632 that is higher than the height 630 of the inner bracket 610. Since the plate 602 is located on the outer bracket 608 through the edge portion 606, the central portion 616 of the plate 602 overhangs the inner bracket 610. After the heat treatment process is completed, the difference between the heights 632, 630 of the inner bracket 610 and the outer bracket 608 can be selected to produce a predetermined curvature of the panel 602. Alternatively, the position of the inner bracket in the environment can be selected to control the curvature of the board 602. For example, the centerline 620 of the neighboring plate 602 provides that the inner bracket 610 can produce a smaller curvature than the edge portion 606 of the neighboring plate 602 provides the inner bracket 510 (the same height). In an exemplary embodiment, the height of the inner bracket 610 and the outer bracket 608 can be selected to produce a panel having a chord depth of about 0.05 inches to about 1 inch.

Environment 604 in which process 500 can be performed can be a chamber, a reactor, a metal vessel, or any other type of environment suitable for heat treatment. In one embodiment, a choke through plate 602 can be formed prior to performing heat treatment process 500. The drilling and heat treatment process sequence can be performed in any order.

In one embodiment, the upper surface 612 of the plate 602 can face the backing plate 112 when used in the chamber 100. The lower surface 614 of the mounting plate 602 in the chamber 100 can face the substrate support member 130. Alternatively, the upstream and downstream surfaces can be swapped such that the curved surface faces the backing plate 112.

At step 504, the temperature in the environment 604 is raised and maintained, for example between about 400 degrees Celsius and about 600 degrees Celsius, to soften the gas distribution plate 602. In one embodiment, the temperature can gradually climb up to a predetermined temperature, For example, approximately 10 degrees Celsius is raised every 2 to 5 minutes until a predetermined temperature is reached.

After a period of heat treatment, as shown in FIG. 6B, the plate 602 begins to soften and sag. As the plate 602 softens, gravity forces the central portion 616 of the plate 602 downward until the plate 602 contacts the upper surface of the lower inner bracket 610. Since the inner bracket 610 and the outer bracket 608 have a predetermined height difference, a predetermined curvature is set in the panel 602. It is also contemplated to apply a vacuum or other mechanical force to the plate 602 to induce a predetermined plate curvature.

Once the curvature of the plate 602 is reached, the beam heat treatment process 500 is engaged at step 506. In some embodiments, the inner bracket 610 can be removed and the plate 602 can be bent until the bottom surface of the environment 604 or the conditional constraints of the physical shape of the board in the environment 604 is reached.

Alternatively, the curvature of the plate 602 may be formed by a bending process in a vacuum or by using a mechanical force. A pumping channel can be provided in the environment (as shown by phantom line 650 of Figure 6B) and a vacuum is applied to a portion of environment 604 using the pumping channel. The pressure differential across the plate 602 causes the plate 602 to bend. Plate 602 can be supported in a vacuum environment by brackets 610, 608. After the predetermined curvature is reached, the vacuum is released to remove the plate from the environment. Examples of suitable vacuum bending processes and heat treatment processes are suitable for use in the invention of US Patent Publication No. 2005/0251990 to Choi et al., issued Nov. 17, 2005.

After bending the plate 602, the upper surface 612 can serve as the upper surface of the plate 602. The curved lower surface 614 of the plate 602 can be used as a downstream surface or machined to be flat.

FIG. 7 shows a schematic diagram of another embodiment of a gas distribution plate 702 having a choke 706 that creates a flow gradient between the edges and corners of the plate 702. The gas distribution plate 702 has a plurality of chokes 706 formed therethrough. In one embodiment, the choke 706 can be formed by computer numerical control (CNC) processing. On board 702. The distribution and configuration of each choke 706 can be selected to produce a gas-to-edge gas flow gradient from the discharge plate 702.

Each choke 702 includes an aperture 708 coupled to channel 710 (as shown by edge portion 728 and corner portions 710C and 710E, respectively, of board 702) (as shown at 708C of central portion 728 of board 702 and 708E of corner portion 726) . Channels 710C, 710E and apertures 708C, 708E collectively form a flow channel that allows gas to pass from gas source 120 through plate 702 and into processing region 106 of plate support member 130 described above. Channels 710C, 710E have upper openings 730C, 730E formed in upper side 732 in gas distribution plate 702. The diameter of channels 710C, 710E and holes 708C, 708E can be selected to control the flow of a predetermined amount of gas. In one embodiment, the channels 710C, 710E have a smaller diameter than the holes 708C, 708E. Alternatively, the diameters of channels 710C, 710E and holes 708C, 708E can be designed in any other different configuration.

Channels 710C, 710E have first depths 724, 716 that extend from upper openings 730C, 730E to lower openings 736C, 736E. Lower openings 736C, 736E are coupled to upper openings 730C, 730E of holes 708C, 708E. The apertures 708C, 708E have a second depth 720, 718 that extends from the upper openings 740C, 740E to the lower openings 744C, 744E formed on the downstream surface 748 of the gas distribution plate 702.

The choke 706 at the center of the edge portion 728 of the plate 702 and the corner portion 726 can have different depths of the channels 710C, 710E and the holes 708C, 708E, with different depths producing a flow gradient from edge to corner at the edge of the plate 702. In one embodiment, the choke 706 at the edge portion 728 has a first depth 724 that is shorter than the first depth 716 and the second depth 718 at the corner portion 726 and a first depth 716 and a portion that is located at the corner portion 726. A second depth 720 having a depth 718 that is long enough to design and construct channels 710C, 710E and holes 708C at the edges and corner portions 726, 728 of the plate 702, The depth difference between 708E controls the amount of gas flow through the angular portion of the plate 702 at the edge of the opposing plate 702, thereby creating a flow gradient across the substrate surface 118. In one embodiment, the upper surface 732 configured to face the backing plate 112 and the downstream surface 748 configured to face the substrate support element 130 can be a flat surface. Since the upper surface 732 and the downstream surface 748 are flat, the width 750 across the plate 702 can be determined to include a first depth 724, 716 and a portion across the plate 702 (eg, including the edge portion 728 and the central portion 726 of the plate 702) The total depth of the two depths 720, 718.

In one embodiment of FIG. 7, the first depth 724 at the edge portion 728 of the plate 702 can be between about 0.05 inches and about 1 inch shorter than the first depth 716 of the central portion 726. The length and/or size difference between the channels 710C, 710E and the apertures 708C, 708E between the edge portion 728 and the corner portion 726 can transport gas from the gas source 120 over the entire substrate surface 118. For example, the longer first depth 716 of the first aperture 710E at the corner portion 726 can create a higher resistance flow (eg, greater resistance) inside the aperture 708E, thus effectively allowing adjustment of the film deposited on the substrate. The nature. In embodiments in which the diaphragm is deposited using the distribution plate 702, the gas flow at the angular portion 726 is reduced relative to the flow through the edge 728, resulting in a higher crystallographic volume in the angle of the deposited tantalum film compared to conventional processes, At the same time, the increased film properties change the edge uniformity, thus increasing the uniformity of the crystallization ratio of the corners and edges of the substrate.

In one embodiment, wherein the film is typically deposited as an arched film feature and/or a non-uniform film property in a conventional deposition process (eg, having a film feature and properties that are thicker than the edge portion), as shown in FIG. The shorter first depth 724 of the aperture 710C at the edge portion 728 can be utilized such that a lower gas throttling occurs at the edge portion 728 than at the corner portion 726, thereby adjusting the properties and characteristics of the film formed on the substrate 140, and the like. Or vice versa.

Figure 8 shows a schematic view of another embodiment of a gas distribution plate 802 having differently shaped chokes formed thereon. Similar to the choke 706 of FIG. 7, the choke 810 through the plate 802 includes an aperture (such as the edge portion of the board 802) that is coupled to the channel (shown as 808C of the edge portion 804 of the board 802 and 808E of the corner portion 806). 814C of the center of 804 and 814E of the corner portion 806). Channels 808C, 808E and apertures 814C, 814E collectively form a flow channel that allows gas to pass from gas source 120 through plate 802 to upper surface 132 of substrate support member 130. Channels 808C, 808E have upper openings 826, 828 formed on upper surface 830 of gas distribution plate 802. The channels 808C, 808E have a first depth 818, 822 extending from the upper opening 826, 828 to the lower opening 834 (as shown by 834C in the edge portion 804 of the plate 802 and 834E in the corner portion 806). The lower openings 808C, 808E correspond to apertures 814C, 814E formed on the downstream surface 832 of the plate 802 with outwardly extending openings 838, 840. The apertures 814C, 814E have second depths 820, 824 that extend from the lower openings 834C, 834E toward the outwardly extending openings 838, 840.

Similar to the description of FIG. 7 above, the channels 808C, 808E and holes 814C, 814E formed on the board 802 can have different sizes, shapes, depths, and lengths to meet different process requirements. In the embodiment illustrated in FIG. 8, the apertures 814C, 814E formed in the edge portion 804 and the corner portion 806 of the panel 802 have different depths, thus forming different inner volumes and/or cavities in the apertures 814C, 814E. The aperture 808C at the edge portion 804 has a shorter first depth 818 than the aperture 814E located at the central portion 806, thus creating a larger volume and/or cavity within the aperture 814C. The shorter first depth 818 of the aperture 808C provides a lower throttling flow, thus eliminating the reaction of the edge portion 804 of the adjacent plate 802, which is the property of adjusting the different films formed therein. The different structures of the chokes formed on the board can be mentioned Different flow gradients across the surface of the substrate are provided, thus effectively adjusting the film profile, properties, uniformity and thickness of the film properties deposited on the substrate. In one embodiment, where a hollow cathode effect and/or a hollow cathode gradient is desired to be formed in the choke 810, the diameter 850 of the choke 810 formed across the downstream surface 832 of the plate 802 can be selected to provide the desired hollow cathode. Effect and / or hollow cathode gradient.

9A-C illustrate another embodiment of a gas distribution plate 902 having a plurality of chokes 926 that provide a flow gradient as the gas flows. As shown in FIG. 9A, the choke 926 formed on the plate 902 can have channels of the same depth across the plate 902 (shown as 914C of the center of the edge portion 910 of the plate 902 and 914E of the corner portion 912) and holes ( 918C of edge portion 910 of panel 902 and 918E of corner portion 912). However, the diameters 906, 904, 908 of the apertures 918C, 918E vary over the downstream surface 928 of the plate 902 to provide different airflow distribution to the substrate surface. Since the dimensions of the holes 918C, 918E are different, a hollow cathode gradient (HCG) is provided across the surface of the substrate. In another embodiment, the upper surface 930 of the plate 902 can be machined to form a concave surface 932 that has an edge portion 910 of the plate 902 that is thinner than the angular portion 912, as shown in Figure 9B. The concave surface 932 removes a portion of the channel 914 from the plate 902, resulting in the channel 914C of the edge 910 portion having a shorter depth 934 and less flow resistance than the channel 914E of the angular portion 912. Since the passage 914C of the edge portion 910 has a lower flow resistance relative to the higher flow resistance in the passage 914E of the corner portion 912 portion, the passage plate resulting from the difference in gas flow resistance and the film properties deposited on the substrate can be effectively adjusted. Flow gradient of 902. For example, in an embodiment in which a ruthenium film having a low crystallization volume at the edge portion is deposited by a conventional manner, as shown in FIG. 9B, it is possible to utilize a high flow resistance in the channel 914E of the center portion 912 (for example, having a channel 914C Long The plate 902 of the channel 914E) deposits a ruthenium film to achieve a higher crystallization volume and a more uniform crystallization percentage at the corner portions, thus compensating and adjusting the difference in properties of the film formed there. Due to the formation of different sized holes 918C, 918E on the downstream surface 928 to provide a hollow cathode gradient (HCG), a hollow cathode gradient (HCG) and a flow gradient (eg, poor gas flow resistance) can be created in the plate 902 of Figure 9B. Common effect.

Figure 9C shows a bottom view of the downstream surface 928 of the plate 902 with the choke open thereon. The surface density and distribution of the choke 926 formed on the plate 902 can be varied to meet different processing needs. In one embodiment, the choke 926 at the corner edge portion 912 can have a higher surface density than the choke of the central portion 910 of the plate 902 so that a hollow gradient (HCG) can be provided. Rather, the distribution, density, shape, and size of the choke 926 through the plate 902 can be formed in a number of alternative configurations. Optionally, the center 914 of the plate 902 can include fewer chokes 926 than the edge portion 910 or the angular portion 912 unit area. Conversely, the choke density can increase from the angular to the edge toward the center.

Figures 10A-D illustrate different embodiments of chokes 1001-1004 formed in plates 10101020, which generate flow gradients through the plates. In one embodiment, the chokes 1001-1004 can be formed on the board 1017-1020 by computer numerical control (CNC) processing. The chokes 1001-1004 generally include a first bore 1005-1008 and a second bore 1013-1016 that are connected by orifices 1009-1012. The first holes 1005-1008 are formed on the upper portion of the plates 1010 to 1020, and the second holes 1013-1016 are formed on the lower portions of the plates 1070 to 1020. The first apertures 1005-1008 and the second apertures 1013-1016 are correspondingly formed through the orifices 1009-1012 to form a collection fluid flow passage through the plates 107-11020. The first hole 1005-1008 and the second hole 1013-1016 may have different structures and rulers formed by the plates 1017-1020, respectively. Ins, shape, size, number, and distribution, thus transporting different amounts and/or processing gases of different flow rates through plates 1017-1020 to the substrate surface. Different amounts and/or different flow rates of process gas produce a flow gradient across the surface of the substrate, thus facilitating the control of the shape and/or properties of the film deposited on the surface of the substrate.

In one embodiment, the depth and length of the orifices 1009-1012 may differ depending on the different shapes of the first aperture 1005-1008 and the second aperture 1013-1016. By adjusting the flow gradient generated by the different structures of the chokes 1001-1004, the film thickness and shape deposited on the surface of the substrate can be controlled. In one embodiment, the first aperture 1005-1008 and the second aperture 1013-1016 may have different configurations, such as squares 1005-1006, 1013-1014 with different orifices 1009-1010 depth, with different sections The flow holes 1011-1012 have a depth of the taper 1015-1019 and the like. The depth of the holes 1005-1008, 1013-1016 can be varied to meet different processing needs.

The openings of the second holes 1013-1016 may expand outward at a predetermined angle or with a certain diameter, thus facilitating the distribution of process gases through the surface of the substrate. The structure of the second hole 1002 can be controlled in a manner that may or may not produce a hollow cathode effect therein. Alternatively, the structure of the second holes 1013-1016 can be controlled in any manner.

In one embodiment, the diameter of the second holes 1013-1016 can be selected to be between about 0.05 inches and about 0.5 inches so that the plasma can remain in the second holes 1013-1016, thus creating a hollow cathode effect. In some embodiments where it is undesirable to create a hollow effect, the diameter of the second apertures 1013-1016 can be selected to be in the range of greater than about 0.01 inches or less than about 0.05 inches to prevent electronic oscillations within the second apertures 1013-1016, thus preventing A hollow cathode effect is produced in the second holes 1013-1016 during processing.

11A-B show cross-sectional views of the gas distribution plate 1100 at different stages of the process of manufacturing the gas distribution plate 1100. As shown in FIG. 11A, a plurality of chokes 1122 can be formed through the plate 1100. Not all of the chokes formed through the plate 1100 are shown in Figures 11A-B, but for purposes of simplicity only representative chokes in the central portion 1104 and some chokes formed in the edge portion 1106 are shown. The choke 1122 includes passages connected by orifices (shown as 1102C at the center of the edge portion 1104 and 1102E shown at the corner portion 1106) and holes (shown at 1114C of the edge portion 1104 and 1114E at the corner portion 1106). Show). The holes 1114C, 1114E have openings formed on the downstream surface 1110 of the plate 1100 that are disposed to face the substrate support member 130. In one embodiment, the holes 1114C, 1114E and the orifices 1120C, 1120E formed on the plate 1100 can be identical. The channel 1102E formed in the edge portion 1106 of the plate 110 may have a narrower diameter than the channel 1102C formed in the central portion 1104 to form a high flow resistance at the edge portion 1106 of the plate 1100. The difference in size between the channels 1102C, 1102E of the plate 1100 provides a means of creating a flow gradient therethrough, thus effectively adjusting the film properties and/or profile deposited on the substrate. It should be noted that the primary flow resistance can be created by selecting different sizes for the first passages 1102C, 1102E or the orifices 1120C, 1120E. In an embodiment in which the main flow resistance is generated by the size of the selected orifices 1120C, 1120E instead of the first passages 1102C, 1102E, the difference in size of the first passages 1102C, 1102E formed on the plate 1100 is unlikely to effectively produce a supply. The flow resistance of the gas. Accordingly, a portion of the downstream surface 1110 formed in the plate 110 can be processed to remove the concave surface 1112 as shown in FIG. 11B. Concave surface 1112 creates holes 1114C, 1114E of different configurations that are formed, thus creating a hollow cathode gradient (HCG). It should be noted that depending on the plate 1100 installed in the processing chamber 100, the concave surface 112 also provides a spacing gradient to the substrate on the substrate support member 130. therefore, The flow gradient, hollow cathode gradient (HCG), and/or the interfacial gradient of the spacing between the plate 1100 and the substrate support member 130 may pass through the control channels 1102C, 1102E, the holes 1114C, 1114E, and the curved surface on the downstream surface 1110. Size is obtained.

12A-B illustrate cross-sectional views of another embodiment of a gas distribution plate 1200 having different choke configurations formed at edge portion 1202 and corner portion 1204 of plate 1200. In the embodiment depicted in FIG. 12A, the choke 1208 at the edge portion 1202 can have a channel 1206C and a bore 1216 connected by a choke 1218, such as the choke 1122 shown in FIG. As for the choke 1208 formed at the corner portion 1204, there may be a longer passage 1206E connected to the hole 1210 having an opening formed on the downstream surface 1212 of the plate 1200. The longer channel 1206E provides a higher flow resistance than the channel 1206C formed in the central portion 1202, thus providing a flow gradient from the edge to the center through the plate 1200. Optionally, a portion of the downstream surface 1212 formed in the plate 1200 can be machined to create a concave surface 1214, as shown in Figure 12B. Similar to the design in FIG. 11B, a hollow cathode gradient (HCG) and a spacing gradient are provided in accordance with the mounting recess 1214 of the chamber 100.

Figure 13 shows a bottom view of the gas distribution plate. The board is divided into N concentric areas. In each zone, the chokes may or may not be the same. The area can be a polygonal ring, such as a square, a rectangle or a ring. From zone 1 to zone N, the chokes formed through the plates may have progressively increased flow resistance (e.g., longer and/or larger resistance choke shape choke lengths). Alternatively, the hollow cathode cavity formed in the choke can be gradually increased in size (volume and/or surface area). The flow resistance and hollow cathode cavity can be obtained by different choke diameters, lengths, flare angles or a combination of these parameters, as shown by the junctions of the above figures.

14A-B illustrate different choke junctions formed in different regions of the panel An exemplary embodiment of a cross-sectional view of the configuration is illustrated in FIG. In the embodiment shown in Fig. 14A, the choke 1402 formed in the central region such as the region 1 in Fig. 13 may have more than the choke 1404 formed in the edge region such as the corner of the N region in Fig. 13. Wide size. In addition, a choke 1406 having a different configuration, for example, has a hole 1410 formed in an upper portion of the choke 1406, and the choke 1406 has an opening formed in the upper surface 1408, which may be formed in the same area, for example, The edge N zone of 13 has a choke 1404 therein. It should be noted that each zone may have sufficiently different choke configurations to provide different center-to-angle flow gradients. Moreover, depending on the arrangement of the chamber 100, portions of the plates formed on the downstream surface 1412 are removed to form a hollow cathode gradient (HCG) and a spacing gradient.

FIG. 15 shows another embodiment of a top view of the gas distribution plate 1500. The gas distribution plate 1500 has at least four corners E1-E4 separated by four sides of the plate 1500. The downstream surface of the plate 1500 can be curved as described above, and the chokes formed in the central region C1 and the edge crossing angles E1-E4 along the four sides of the plate 1500 can have different choke depths. In one embodiment, the first plurality of chokes formed through the corners E1-E4 of the plate 1500 have a second plurality of chokes formed through the edges of the plates between the corners E1-E4. Long choke length. Additionally, a third plurality of chokes may be formed at a central region C1 of the plate 1500 and/or at a position that is more inward than a position formed by the first and second plurality of chokes. The third plurality of chokes have a shorter choke length than the choke formed through the edges E1-E4 and the edges of the sides of the plate 1500 between the corners E1-E4. Since the first plurality of chokes formed at the corners E1-E4 have a longer length, the first plurality of corners passing through the plate 1500 with respect to the flow resistance through the impact of the second and third plurality of chokes The flow resistance of the flow impact is higher. In addition, since the second plurality of chokes can have a longer length than the third plurality of chokes, when shorter than the first plurality of chokes The length of the flow resistance arm impacted by the second plurality of chokes is greater than the flow resistance through the third choke impact, but less than the flow resistance through the first plurality of chokes.

Alternatively, an adaptor plate 1506 can be utilized on the upper and/or lower surface of the plate 1500. In embodiments where the fixed plate 1506 is used, the downstream surface of the plate 1500 can be curved or kept flat. The fixed plate 1506 has a plurality of chokes formed thereon that cooperate to form a choke on the plate 1500 to control the flow resistance through the angle of the plate 1500. The fixed plate 1506 can be formed in any different size, shape or size suitable for increasing the length of the choke at certain regions of the plate 1500. In the illustrated embodiment of FIG. 15, the fixed plate 1506 can be located at an angle E1-4 of the plate 1500 to provide increased flow resistance through the plate 1500. The fixed plate 1506 may be in the shape of a triangle having two dimensions connected to the corners E1-4 of the plate 1500. In one embodiment, the fixed plate 1506 has an equilateral triangle of between about 50 mm and about 1000 mm, such as a length 1502 of about 500 mm. Alternatively, the fixed plate 1506 can be located in any other different area of the plate 1500. For example, the fixed plate 1506 can be positioned in the central region C1 of the plate.

16A-B show cross-sectional views of the gas distribution plate 1500 installed in the chamber 100 in Fig. 15 along the line A-A. In the embodiment illustrated in Figure 16A, the fixed plate 1506 can be in the shape of a whiteboard having a plurality of chokes 1604, 1606 formed thereon. The chokes 1604, 1606 formed on the fixed plate 1506 are aligned with the choke 1608 formed on the plate 110. The aligned chokes 1604, 1606 on the plate 110 increase the overall length of the choke 1608 through which the process gas from the gas source 120 flows, thus creating a higher gas flow resistance in the area described by the fixed plate 1506. By using the fixed plate 1506, the overall length of the choke 1608 through which the process gas can flow can be flexibly adjusted, thus providing a means of adjusting the properties and/or shape of the deposited film at a particular point. Optional Ground, as shown in FIG. 16B, the fixed plate 1506 can be divided into sections (1650, 1652) to increase the length of certain chokes 1608 selected in the panel 110.

17A-17C illustrate different embodiments of a fixed plate 1700 that can have different choke configurations formed thereon. In the embodiment shown in Fig. 17A, the choke 1704 formed on the fixed plate 1700 is a straight hole. The fixing plate 1700 is mounted on a gas distribution plate 1702 on which the choke 1710 is formed. The choke 1710 can be any of a variety of different shapes, sizes, and configurations as desired. Alternatively, the choke 1704 formed on the fixed plate 1700 may have a different structure, for example, the upper narrow passage as shown in FIG. 17B cooperates with the lower wide passage, or the upper wide passage and the lower narrow as shown in FIG. 17C. The channels are matched.

18A-C show cross-sectional views of different embodiments of the gas distribution plate 1500 installed in the chamber 100 of Fig. 15 along line B-B. In the embodiment shown in FIG. 18A, the fixed plate 1506 connects the upper surface 1814 of the plate 1500. The fixed plate 1506 is optionally at the corner portions E1, E3 of the plate 1500, such as the corner portion 1808. The choke 1810 formed on the fixed plate 1506 cooperates with the choke 1812 formed on the plate 1500 to increase the overall flow resistance of the process gas flowing from the gas source 120 through the corner portion 1808 of the plate 1500. Alternatively, the portion of the upper surface of the plate 1500 can be machined to create a curved upper surface, thus causing the choke 1802 at the edge and/or central portion 1806 to have a choke at the corner portion 1808 as shown in Figure 18B. 1812 short length. It should be noted that the curvature of the upper surface 1818 of the edge portion where the fixing plate 1506 is located is increased for the sake of simplicity. Optionally, the downstream surface portion of the plate 1500 can be machined to create a curved lower surface 1820, resulting in the choke 1812 having a different curvature and/or an increased open end section size, thus creating a hollow cathode gradient (HCG). In addition, as described above, in the installation to the chamber 100 The mid-time bending of the lower surface also creates a spacing gradient that faces the substrate support member 130.

Referring additionally to one embodiment of the gas distribution plate 1902 shown in FIG. 19A, the gas distribution plate 1902 has parameters including corners 1922, 1924, 1926, 1928 and edges 1906, 1908, 1910, 1912. It should be noted that the holes formed by the plate 1902 are not shown for the sake of simplicity. The center 1914 of the edge portion 1906 of the plate 1902 is further isolated from the substrate support member 130 than the edges 1908, 1910 and the corners 1922, 1924, 1926, 1928 of the plate 1902. The holes through the corners 1922, 1924, 1926, 1928 have a longer length than the holes formed through the center 1914 of the edge 1906, thus having a larger conductance relative to the pass angles 1912, 1914, 1926, 1928. More process gas flows through plate 1902 through center 1914 of edge 1906. It has been found that when a polycrystalline germanium is deposited using a plasma enhanced CVD process, increased crystallization volume and percent uniformity is achieved using a gas distribution plate having an edge to center spacing gradient compared to a gas distribution plate having even spacing at the periphery of the plate. Although the embodiment shown in FIG. 19A shows an edge-to-center spacing gradient limited to both edges of the plate 1902, FIG. 19B shows four sides 1950, 1952, 1954 having a line ratio to the angles 1960, 1962, 1964, 1966. Another embodiment of a spaced-apart gas distribution plate 1904 defined by 1956. In addition, although the gas distribution plates 1902, 1904 are shown facing the interval gradient of the substrate with the plane facing the gas distribution plates 1902, 1904. It will be appreciated that the plane of the gas distribution plates 1902, 1904 may be directed toward the substrate or the gas distribution plates 1902, 1904 may include a gradient of spacing from edge to corner.

In an exemplary embodiment suitable for depositing a tantalum film for a solar cell, a deposition process can be designed to deposit a layer of microcrystalline germanium using a flow gradient generated by the sheet. The microcrystalline layer may be an i-type layer formed in the p-i-n junction region of the solar cell device. Alternatively, other devices can be formed using the microcrystalline germanium layer. The gas distribution element may have a formation according to the gas supply through the distribution plate Chokes of different structures (eg, size, depth, etc.) thereon are used to create an edge-to-angle flow gradient with or without a hollow cathode effect. The flow gradient may be generated by an upper curved surface on the upper surface of the at least one gas distribution plate, or a gas distribution plate having a turbulent flow through the plate configured with different depths and/or lengths so as to be at an edge relative to the gas distribution plate The airflow generated at the corners of the gas distribution plate is different. In the particular embodiment shown in the present invention, the air distribution plate provides a greater airflow resistance at the corner portion of the gas distribution plate than the airflow resistance at the center of the edge portion of the gas distribution plate. Alternatively, the gradient spacing may also be created by the flow gradient engagement of the plates with the concave surfaces of the downstream surface of the plates. The concave surface has a chord depth of between about 0.05 inches and about 1 inch. Optionally, the gradient spacing is selected to be between about 50 mils to about 500 mils between the gas distribution plate and the substrate support member.

In the embodiment in which the intrinsic type microcrystalline germanium layer is deposited, a gas mixture of decane gas and hydrogen gas in a ratio of 1:20 to 1:200 may be supplied to the chamber 100 through a gas distribution plate having an upper concave surface. In one embodiment, the concave surface has a chord depth between about 0.05 inches and about 1 inch. The decane gas may be supplied at a flow rate between about 0.5 sccm/L and about 5 sccm/L. Hydrogen gas may be supplied at a flow rate between about 40 sccm/L and about 400 sccm/L. In some embodiments, the decane gas may rise from the first flow rate to the second flow rate during deposition. In some embodiments, hydrogen can be reduced from a first flow rate to a second flow rate during deposition. The gas distribution plate can be supplied with an RF power source of about 300 kW/cm ² or more, preferably 600 kW/cm ² or more. In some embodiments, the energy density can be reduced from a first energy density to a second energy density during deposition. The pressure of the chamber is maintained between about 1 Torr and about 100 Torr, preferably between about 3 Torr and about 20 Torr, and more preferably between about 4 Torr and about 12 Torr. Alternatively, the pressure during deposition may be segmented into one or more steps, such as from a first pressure to a second pressure after the pre-treatment period. The deposition rate of the intrinsic type microcrystalline layer may be about 200 /min, preferably 500 /min. A method and apparatus for depositing intrinsic crystallites using a flow gradient generated by a gas distribution plate is disclosed in "Methods and Appratus for Depositing a Microcrystalline Silicon Film for Photovoltaic Device", filed on June 23, 2006. U.S. Patent Application Serial No. 11/426,127, which is incorporated herein by reference. The microcrystalline germanium intrinsic layer has a percentage of crystallization of between about 20 and about 80 percent, such as between about 55 and about 75 percent.

In a particular embodiment of depositing an intrinsic type microcrystalline germanium layer with a gas distribution plate as described herein, the film properties of the deposited microcrystalline germanium layer have improved film uniformity. For example, it has often been found that intrinsic microcrystalline germanium deposited by conventional techniques has poor film uniformity, such as a non-uniform crystalline volume at the film corner. The gas distribution plates are configured to provide higher flow resistance at the corners relative to the edges and center, thus resulting in a deposited film having a higher crystallographic volume relative to conventionally formed films, thus providing uniform film properties through the substrate surface. In one embodiment, the crystalline volume of the microcrystalline germanium layer deposited with a gas distribution plate having an edge-to-center flow gradient has been shown to improve from about 70-90 percent of the crystalline volume non-uniformity to less than about one hundred percent from conventional techniques. A crystal volume non-uniformity of 3.5. The improved uniformity of film properties results in increased conversion efficiency, fill factor, and improved electrical properties of the solar cells formed on the substrate, thus improving the overall performance of the cell.

Accordingly, the present invention provides an apparatus for depositing a ruthenium membrane having a gas distribution plate constructed with a choke that produces a gas flow gradient from the edge to the center. The tantalum film deposited by the present invention is particularly suitable for use in solar cells. The improved device advantageously provides better control over the shape and properties of the film deposited on the substrate, thereby increasing the quality control of the film and increasing the photoelectric conversion Efficiency and device performance.

While the foregoing is directed to the embodiments of the present invention, the invention may be construed as the scope of the invention, and the scope of the invention is defined by the scope of the appended claims.

Room 100‧‧

102‧‧‧ wall

104‧‧‧ bottom

106‧‧‧Processing space

108‧‧‧Flow valve channel

109‧‧‧ pump

110‧‧‧ gas distribution board

111‧‧‧Current

112‧‧‧ Backplane

114‧‧‧suspension

116‧‧‧Center support

118‧‧‧Substrate surface

120‧‧‧ gas source

122‧‧‧RF power supply

124‧‧‧Remote plasma source

130‧‧‧Substrate support components

131‧‧‧ Grounding belt

132‧‧‧ Receiving surface

134‧‧‧ rod

136‧‧‧ Lifting system

138‧‧‧Upselling

139‧‧‧Cooling element

140‧‧‧Substrate

150‧‧‧ downstream surface

196‧‧‧ lower surface

198‧‧‧ upper surface

204‧‧‧Current

206‧‧‧ concave

220‧‧‧ length

222‧‧‧ length

224‧‧‧ corner section

226‧‧‧Edge section

238‧‧‧ Radius

250‧‧‧Current

254‧‧‧ string depth

256‧‧‧ string depth

258‧‧‧ radius

260‧‧‧Bend surface

300‧‧‧ gas distribution board

302‧‧‧Upper surface

304‧‧‧ string depth

306‧‧‧Upper surface

308‧‧‧ corner section

310‧‧‧ side green part

312‧‧‧ plane

314‧‧‧Current

316‧‧‧ downstream surface

318‧‧‧ length

320‧‧‧ length

322‧‧‧Current

324‧‧‧Current

400‧‧‧ gas distribution board

402‧‧‧Bend surface

406‧‧‧ first hole

408‧‧‧ first hole

410‧‧‧second hole

412‧‧‧second hole

414‧‧‧ string depth

418‧‧‧ downstream surface

420‧‧‧ upper surface

422‧‧‧ plane

430‧‧‧Edge section

450‧‧‧Current

500‧‧‧ Process

502‧‧‧Steps

504‧‧‧Steps

506‧‧‧Steps

602‧‧‧ gas distribution board

604‧‧‧ Environment

606‧‧‧Edge section

608‧‧‧External bracket

610‧‧‧Internal bracket

612‧‧‧ upper surface

614‧‧‧ lower surface

616‧‧‧ central part

620‧‧‧ center line

630‧‧‧ Height

632‧‧‧ Height

650‧‧‧ pumping channel

702‧‧‧ gas distribution board

706‧‧‧Current

708C‧‧‧ hole

708E‧‧ hole

710C‧‧‧ channel

710E‧‧‧ channel

716‧‧‧first depth

718,720‧‧‧second depth

724‧‧‧First Depth

726‧‧‧ corner section

728‧‧‧Edge section

730C‧‧‧ openings

730E‧‧‧ openings

732‧‧‧ upper surface

736C‧‧‧ opening

736E‧‧‧ opening

740C‧‧‧Opening

740E‧‧‧Opening

744C‧‧‧ opening

744E‧‧‧ opening

748‧‧‧ downstream surface

802‧‧‧ gas distribution board

804‧‧‧ edge part

806‧‧‧ corner section

808C‧‧‧ channel

808E‧‧ channel

810‧‧‧Current

814C‧‧‧ hole

814E‧‧‧ hole

818‧‧‧depth

820‧‧ depth

822‧‧ depth

824‧‧ depth

826‧‧‧Opening

828‧‧‧Opening

832‧‧‧ downstream surface

834C‧‧‧ opening

834E‧‧‧ opening

838‧‧‧ openings

840‧‧‧ openings

902‧‧‧ gas distribution board

904‧‧‧ Radius

906‧‧‧ Radius

908‧‧‧ Radius

910‧‧‧Edge section

912‧‧‧ corner section

914C‧‧‧ channel

914E‧‧‧ channel

918C‧‧‧ hole

918E‧‧ hole

926‧‧‧Current

928‧‧‧ downstream surface

930‧‧‧ upper surface

932‧‧‧ concave

934‧‧‧depth

1001‧‧‧Current

1002‧‧‧Current

1003‧‧‧Current

1004‧‧‧Current

1005‧‧‧ hole

1006‧‧‧ hole

1007‧‧‧ hole

1008‧‧‧ hole

1009‧‧‧ orifice

1010‧‧‧ orifice

1011‧‧‧ orifice

1012‧‧‧ orifice

1012‧‧‧ hole

1014‧‧‧ hole

1015‧‧‧ hole

1016‧‧‧ hole

1017‧‧‧ board

1018‧‧‧ board

1019‧‧‧ board

1020‧‧‧ board

1100‧‧‧ gas distribution board

1102C‧‧‧ channel

1102E‧‧‧ channel

1104‧‧‧ central part

1106‧‧‧Edge section

1110‧‧‧ board

1112‧‧‧ concave

1114C‧‧‧ hole

1114E‧‧ hole

1120C‧‧‧ orifice

1120E‧‧‧ orifice

1122‧‧‧Current

1200‧‧‧ gas distribution board

1202‧‧‧Edge part

1204‧‧‧ corner section

1206C‧‧‧ channel

1206E‧‧ channel

1208‧‧‧Current

1210‧‧‧ hole

1212‧‧‧ downstream surface

1214‧‧‧ concave

1216‧‧‧ hole

1218‧‧‧ orifice

1402‧‧‧Current

1404‧‧‧Current

1406‧‧‧Current

1408‧‧‧ upper surface

1410‧‧‧ hole

1412‧‧‧ downstream surface

1500‧‧‧ gas distribution board

1502‧‧‧ length

1506‧‧‧fixed board

1604‧‧‧Current

1606‧‧‧Current

1608‧‧‧Current

Section 1650‧‧‧

Section 1652‧‧‧

1700‧‧‧fixed board

1702‧‧‧ gas distribution board

1704‧‧‧Current

1710‧‧‧Current

1806‧‧‧ central part

1808‧‧‧Edge section

1810‧‧‧ Current Circulator

1812‧‧‧Current

1814‧‧‧ upper surface

1816‧‧‧ downstream surface

1818‧‧‧ upper surface

1820‧‧‧ lower surface

1902‧‧‧ boards

1904‧‧‧ boards

1906‧‧‧ edge

1908‧‧‧ edge

1910‧‧‧ edge

1912‧‧‧ edge

1914‧‧ Center

1922‧‧‧ corner

1924‧‧‧ corner

1926‧‧‧ corner

1928‧‧‧ corner

Edge of 1950‧‧

1952‧‧‧ edge

1954‧‧‧ edge

1956‧‧‧ edge

1960‧‧‧ edge

1962‧‧‧ edge

1964‧‧‧ edge

1966‧‧‧ edge

For a more detailed understanding of the aspects of the present invention, the invention may be described in detail.

Figure 1 shows a schematic cross-sectional view of one embodiment of a processing chamber; Figures 2A-C show schematic cross-sectional views of a gas distribution plate at various stages of manufacturing that produce a flow gradient; Figures 3A-B show a gas distribution plate that produces a flow gradient A schematic cross-sectional view at different stages of manufacture; Figures 4A-B show a schematic cross-sectional view of another embodiment of a gas distribution plate that produces a flow gradient at various stages of manufacture; Figure 5 shows a heat treatment suitable for the manufacture of a gas distribution plate Embodiments; Figures 6A-B show different stages of the heat treatment shown in Figure 5; Figure 7 shows one embodiment of a choke that can be formed on a gas distribution plate; Figure 8 shows a choke with a through formation A cross-sectional view of another embodiment of a gas distribution plate of a different configuration; FIGS. 9A-C illustrate another embodiment of a gas distribution plate having a plurality of chokes providing a gas flow gradient; FIGS. 10A-D illustrate Different embodiments of the choke formed on the gas distribution plate; FIGS. 11A-B show the different stages of the process flow for manufacturing the gas distribution plate A cross-sectional view of the gas plate; FIGS. 12A-B illustrate another embodiment of a gas distribution plate having different choke structures formed in the center and edge regions of the plate; FIG. 13 is a bottom view of the gas distribution plate; FIG. -B shows an exemplary embodiment of a cross-sectional view of a plate having different choke structures formed in different regions of the plate; Figure 15 shows another embodiment of a top view of the gas distribution plate; Figures 16A-B show along A -A line extraction of a cross-sectional view of the gas distribution plate 1500 of Figure 15; Figures 17A-17C illustrate different embodiments of an adapter plate 1700 that may have different choke configurations formed thereon; Figures 18A-C illustrate A cross-sectional view of the gas distribution plate 1500 of Fig. 15 taken along line B-B; and Figs. 19A-19B are plan views of different embodiments of the grooved gas distribution plate.

For the sake of understanding, the same reference numbers are used to identify the same elements in the drawings. It can be appreciated that the elements and features of one embodiment may be beneficially incorporated into other embodiments without further description.

It is to be understood, however, that the appended claims

702‧‧‧ gas distribution board

706‧‧‧Current

708C‧‧‧ hole

708E‧‧ hole

710C‧‧‧ channel

710E‧‧‧ channel

716‧‧‧first depth

718,720‧‧‧second depth

724‧‧‧First Depth

726‧‧‧ corner section

728‧‧‧Edge section

730C‧‧‧ openings

730E‧‧‧ openings

732‧‧‧ upper surface

736C‧‧‧ opening

736E‧‧‧ opening

740C‧‧‧Opening

740E‧‧‧Opening

744C‧‧‧ opening

744E‧‧‧ opening

748‧‧‧ downstream surface

Claims (23)

An apparatus for depositing a film, comprising: a processing chamber; and a quadrilateral gas distribution plate disposed in the processing chamber, the gas distribution plate having: a first plurality of chokes passing through the gas distribution plate Forming, the first plurality of chokes are disposed in a corner portion of the gas distribution plate; and a second plurality of chokes are formed through the gas distribution plate, the second plurality of chokes are along the gas distribution plate An edge portion is disposed, wherein the first plurality of chokes have greater flow resistance than the second plurality of chokes, wherein each of the chokes formed through the gas distribution plate has a channel coupled to a hole, wherein the channel has a smaller diameter than the hole, and wherein the channels of the second plurality of chokes have a shorter depth than the channels of the first plurality of chokes . The device of claim 1, wherein the gas distribution plate further comprises: a concave surface. The device of claim 2, wherein the concave surface of the gas distribution plate has a chord depth that is between about 0.05 inches and about 1 inch. The device of claim 1, wherein the gas distribution plate further comprises: a concave downstream surface. The device of claim 1, wherein the device is The flow device has a configuration selected to produce a hollow cathode gradient during the plasma processing, and wherein the turbulators have a diameter that is between about 0.01 inches and about 1 inch. The apparatus of claim 1, further comprising: a substrate support member disposed in the chamber, wherein the substrate support member and the gas distribution plate are disposed to define a gradient interval therebetween. The device of claim 1, further comprising: a fixing plate disposed adjacent to at least one of an upper surface or a lower surface of the gas distribution plate, the fixing plate being disposed on the gas distribution plate In the same angle. The apparatus of claim 7, wherein the fixing plate further comprises: a plurality of passages formed by the fixing plate and the first plurality of chokes formed through the equiangular angle of the gas distribution plate alignment. The apparatus of claim 1, wherein the gas distribution plate further comprises: a third plurality of chokes formed through the gas distribution plate located in the first and second plurality of chokes Wherein the third plurality of chokes have a lower flow resistance than the first choke. An apparatus for depositing a film, comprising: a processing chamber; and a quadrilateral gas distribution plate disposed in the processing chamber, the gas distribution plate having: a first plurality of chokes formed through the gas distribution plate a first plurality of chokes positioned in a corner portion of the gas distribution plate; and a second plurality of chokes formed through the gas distribution plate, the second plurality a choke is disposed along an edge portion of the gas distribution plate, wherein the first plurality of chokes have a longer length than the second plurality of chokes, wherein the chokes formed through the gas distribution plate Each of the chokes has a passage coupled to a bore, wherein the passage has a smaller diameter than the bore, and wherein the passages of the second plurality of chokes have a ratio of the first plurality of chokes These channels have a shorter depth. The device of claim 10, wherein the gas distribution plate further comprises: a curved downstream surface. The device of claim 10, wherein the gas distribution plate has a concave surface having a chord depth bounded by between about 0.05 inches and about 1 inch. The device of claim 10, wherein the chokes have a diameter of between about 0.01 inches and about 1 inch. The device of claim 10, further comprising: a fixing plate connected to an upper surface of the gas distribution plate. The device of claim 10, further comprising: a fixing plate connected to each corner of the gas distribution plate. An apparatus for depositing a film, comprising: a processing chamber; and a gas distribution plate disposed in the processing chamber and having a plurality of chokes formed through the passage, the chokes being arranged to define at least three different regions Flow resistance, wherein a first region defined at a corner portion of the gas distribution plate has a larger flow than a second region defined along an edge portion of the gas distribution plate a dynamic resistance, and a third region defined in a central portion of the gas distribution plate has a smaller flow resistance than the second region, wherein each of the turbulences of the chokes formed through the gas distribution plate The device has a passage coupled to a bore, wherein the passage has a smaller diameter than the bore, and wherein the passages of the chokes in the second region have a greater ratio than the first region The channels of the flow are of a shorter depth. The apparatus of claim 16, wherein the choke formed in the third region of the gas distribution plate has a larger diameter than the choke formed in the second region of the gas distribution plate. . The apparatus of claim 16, wherein the choke formed in the third region of the gas distribution plate has a shorter length than the choke formed in the second region of the gas distribution plate. . The device of claim 16, wherein the gas distribution plate further comprises: a curved downstream surface. A method of depositing a film in a chamber, comprising the steps of: transferring a substrate to a chamber having a gas distribution plate facing a substrate support member disposed in the chamber; The process gas is passed through the corner of the gas distribution plate to flow toward the substrate at a flow rate less than the flow rate of the process gas flowing through the center of the gas distribution plate to deposit a layer on the substrate. The method of claim 20, wherein the step of flowing the processing gas through the gas distribution plate further comprises the step of flowing decane gas and hydrogen into the ratio between 1:20 and 1:200. In the room. The method of claim 20, wherein the step of flowing the process gas through the gas distribution plate further comprises the step of flowing the process gas through a fixed plate located at a corner of the gas distribution plate. The method of claim 20, wherein the step of flowing the processing gas further comprises the step of providing a higher resistance at a corner of the gas distribution plate than a resistive flow at a center of the gas distribution plate. flow.