TWI473213B - Method for making flexible semiconductor device - Google Patents

Description

Method of manufacturing flexible semiconductor device

The present invention relates to a method of fabricating a semiconductor device, and more particularly to a method of fabricating a flexible semiconductor device.

Conventional semiconductor devices such as thin film transistors or light-emitting diodes are usually made of a hard material such as glass. Recently, research has been conducted to replace flexible substrates such as plastic substrates for glass substrates of semiconductor devices. Flexible substrates for flexible semiconductor devices have the advantages of durability, light weight, and good flexibility. Therefore, flexible semiconductor devices have broad application prospects.

However, the flexible substrate itself has the characteristics of easy curling, surface undulation, etc., which is disadvantageous for forming a semiconductor device on the flexible substrate by using a conventional semiconductor processing technique. For this purpose, a flexible semiconductor device and a patent application thereof are disclosed in the patent application entitled "SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF", which is published in the U.S. Patent No. US 2007/0045621 A1, the entire disclosure of which is hereby incorporated by reference. Production method.

Referring to FIG. 1, the manufacturing method of the flexible semiconductor device includes: forming a separation layer 102 on the hard substrate 101; forming an insulating layer 103 on the separation layer 102; forming a semiconductor element 1111 on the insulating layer 103 and connecting to the semiconductor element 1111. a first electrode layer 104; an inorganic insulating layer 1115 is formed on the portion of the first electrode layer 104; a layer 105 containing an organic compound is formed on the first electrode layer 104 and the inorganic insulating layer 1115, and is formed and contains an organic compound The layer 105 is in contact with the second electrode layer 106 of the inorganic insulating layer 1115; and the flexible substrate 108 is fixed to the second electrode layer 106, and then The hard substrate 101 and the insulating layer 103 forming the semiconductor element 1111 are separated from each other at the separation layer 102 to form a semiconductor device having the flexible substrate 108.

The above manufacturing method provides a manufacturing method of a flexible semiconductor device which is formed by forming a flexible semiconductor device prior to the hard substrate 101, and fixing the flexible substrate 108 to the flexible semiconductor device, and then to the hard substrate 101. The formed semiconductor device is separated from the hard substrate 101, thereby obtaining a flexible semiconductor device. However, the above manufacturing method is complicated.

In view of this, it is indeed necessary to provide a simple method of directly manufacturing a flexible semiconductor device on a flexible substrate.

A method of fabricating a flexible semiconductor device, comprising the steps of: providing a hard substrate having a surface; providing a flexible substrate having a first surface and a second surface opposite the first surface a surface, the first surface of the flexible substrate is fixed to the surface of the hard substrate; a semiconductor device is directly formed on the second surface of the flexible substrate by a semiconductor processing process; and the hard substrate is removed to form a flexible semiconductor device.

Compared with the prior art, the flexible semiconductor device provided by the present invention firstly fixes the flexible substrate to the surface of the hard substrate, and then directly performs semiconductor processing on the second surface of the flexible substrate to form a flexible semiconductor device. The method can avoid the phenomenon that the flexible substrate itself curls and surface undulates when the flexible substrate directly performs semiconductor processing to form a flexible semiconductor device, which is convenient for processing and can be The accuracy of the flexible semiconductor device is improved. The manufacturing method of the flexible semiconductor device provided by the invention has the characteristics of simple method and easy operation.

The method of manufacturing the flexible semiconductor device provided by the present invention will be further described in detail below with reference to the accompanying drawings.

Referring to FIG. 2, a first embodiment of the present invention provides a method for manufacturing a flexible semiconductor device, that is, a bottom gate type thin film transistor, the manufacturing method comprising the steps of: (s110) providing a hard substrate having a surface; (s120) providing a flexible substrate having a first surface and a second surface disposed opposite the first surface, the first surface of the flexible substrate being fixed to a surface of the hard substrate; (s130) adopting The semiconductor processing process forms a semiconductor device directly on the second surface of the flexible substrate; (s140) removing the hard substrate to form a flexible semiconductor device.

Referring to FIG. 3, in the step s110, a hard substrate 12 having a surface 122 is provided. The surface 122 of the hard substrate 12 is relatively flat. The surface 122 of the hard substrate 12 may be washed with acetone, isopropyl alcohol or ethanol in advance; then washed with deionized water and treated with oxygen plasma to ensure that the surface 122 of the hard substrate 12 is relatively clean, thereby facilitating subsequent processes. Going on. The material of the hard substrate 12 is glass, quartz, bismuth oxynitride, tantalum nitride, metal or hard plastic. The shape of the hard substrate 12 is not limited and is determined according to actual needs. In this embodiment, the hard substrate 12 is a square glass.

The step s120 specifically includes the steps of: (s121) forming a bonding layer 14 on the hard substrate 12; (s122) providing a flexible substrate 16 The flexible substrate 16 has a first surface 162 and a second surface 164 disposed opposite the first surface 162; (s123) when the bonding layer 14 is uncured or not solidified, the flexible substrate 16 is One of the side edges 18 of the first surface 162 contacts the bonding layer 14, and the flexible substrate 16 is placed on the bonding layer 14 from the edge 18; (s124) the bonding layer 14 is cured.

In the above step s121: First, a bonding material is provided. The bonding material has fluidity, can be solidified or solidified, and is insoluble in acetone, isopropanol and ethanol. The bonding material may be a material such as polyimide, epoxy resin, acrylic resin, polyester, polyamide, enamel resin, melamine resin, phenol resin or polydimethyl siloxane. In this embodiment, the bonding material is polydimethyl siloxane. Next, the bonding material is spin-coated on the hard substrate 12 to form the bonding layer 14. Since the hard substrate 12 is cleaned, its surface is relatively clean, which is advantageous for increasing the bonding force of the hard substrate 12 and the bonding material. This step can also apply the bonding material to the hard substrate 12 in the form of a silicone.

In the above step s122: the flexible substrate 16 needs to be cleaned. Specifically, the flexible substrate 16 may be previously washed with acetone, isopropyl alcohol or ethanol; then washed with deionized water and treated with oxygen plasma to ensure that the surface of the flexible substrate 16 is clean. Wherein, the flexible substrate 16 is characterized by being soft, thin and light in weight. The material of the flexible substrate 16 is polyethylene terephthalate, polyethylene naphthalate, polyether oxime, polypropylene, polypropyl sulfide, polycarbonate, polyether phthalimide, polyphenylene sulfide, A polymeric material such as polyphenylene ether, polyfluorene or polyphthalic acid amine. The thickness and shape of the flexible substrate 16 are not limited and can be determined according to actual needs. The flexible substrate 16 may have a thickness of 10 microns or more. This embodiment The material of the flexible substrate 16 is transparent polyethylene terephthalate, the flexible substrate 16 has a thickness of 30 micrometers, and the flexible substrate 16 has a square shape.

In the step s123, when the bonding layer 14 is uncured or not solidified, the first surface 162 of the flexible substrate 16 is contacted with the bonding layer 14 and the flexible substrate 16 is A surface 162 is gradually in contact with the bonding layer 14. Thus, it is advantageous to remove the bubbles generated when the flexible substrate 16 is in contact with the bonding layer 14, so that the two are better combined, so that the flexible substrate 16 is relatively flat and is not easily curled.

In the above step s124: first, the hard substrate 12 to which the flexible substrate 16 is bonded is placed in a vacuum machine for vacuum treatment to remove the first surface 162 of the flexible substrate 16 and the bonding layer 14. Bubbles may exist between the interfaces to make the flexible substrate 16 flatter. Next, the bonding layer 14 is cured or solidified. The means of curing or solidifying includes natural drying, high temperature drying or cooling drying. In this embodiment, the polydimethylsiloxane is cured by a natural drying method.

Since the flexible substrate 16 is disposed on the uncured or uncured adhesive layer 14, the flexible substrate 16 can be prevented from curling and surface undulation due to itself, so that the flexible substrate 16 can be better with the adhesive layer 14. The combination is such that the surface of the flexible substrate 16 is relatively flat so as to be processed directly from its surface using a semiconductor processing process to form a flexible semiconductor device.

In the step s130, a semiconductor processing process such as evaporation, sputtering, chemical deposition, masking or etching is directly applied to the second surface of the flexible substrate 16. Face 164 forms a semiconductor device. The semiconductor device includes a thin film transistor, a field effect transistor, a light emitting diode, or a photoresistor.

In this embodiment, a semiconductor processing process is used to directly process the second surface 164 of the flexible substrate 16 to form a bottom gate type thin film transistor 20. Specifically, the method includes the following steps: (s131) forming a gate electrode 220 on the second surface 164 of the cleaned flexible substrate 16; (s132) forming an insulating layer 230 covering the gate electrode 220; (s133) forming a semiconductor layer 240 is formed on the surface of the insulating layer 230; (s134) a source 251 and a drain 252 are formed on the semiconductor layer 240, and the source 251 and the drain 252 are spaced apart from each other and electrically connected to the semiconductor layer 240.

In step s131, the material of the gate 220 should have good conductivity. Specifically, the material of the gate 220 may be a conductive material such as a metal, an alloy, indium tin oxide (ITO), antimony tin oxide (ATO), conductive silver paste, conductive polymer or a carbon nanotube film. The metal can be aluminum, copper, tungsten, molybdenum or gold. The alloy is an alloy of two or more metals of aluminum, copper, tungsten, molybdenum and gold. Specifically, when the material of the gate 220 is metal, alloy, ITO or ATO, the gate electrode 220 can be formed by evaporation, sputtering, chemical deposition, masking or etching. When the material of the gate 220 is a conductive silver paste, a conductive polymer or a carbon nanotube film, the gate electrode 220 can be formed by direct adhesion or printing. Generally, the thickness of the gate 220 is from 0.5 nm to 100 μm.

In this embodiment, the material of the gate 220 is ITO, and the method of forming the gate 220 can be specifically performed by the following two methods.

The first manner specifically includes the following steps: First, on the flexible substrate The second surface 164 of the 16 is uniformly coated with a layer of photoresist; secondly, a gate region is formed on the photoresist by photolithography such as exposure and development; again, by vacuum evaporation, magnetron sputtering or electron beam evaporation, etc. The deposition method deposits an ITO layer on the surface of the gate region. Finally, the photoresist and the ITO layer thereon are removed by an organic solvent such as acetone to obtain a gate electrode 220 formed on the second surface 164 of the flexible substrate 16.

The second method specifically includes the following steps: first, depositing an ITO layer on the second surface 164 of the flexible substrate 16; secondly, coating a surface of the ITO layer with a photoresist; again, removing by photolithography such as exposure and development a photoresist outside the gate region; finally, the metal layer outside the gate region is removed by plasma etching or the like, and the photoresist on the gate region is removed by an organic solvent such as acetone, thereby being formed on the flexible substrate 16 The gate 220 on the second surface 164. In this embodiment, the thickness of the gate 220 is about 1 micron.

An insulating layer 230 is formed in the step (s132) to cover the gate electrode 220. The material of the insulating layer 230 may be a hard material such as tantalum nitride or tantalum oxide or a flexible material such as benzocyclobutene, polyester or acrylic resin. The insulating layer 230 may be formed by different methods depending on the kind of the material of the insulating layer 230. Specifically, when the material of the insulating layer 230 is tantalum nitride or tantalum oxide, the insulating layer 230 may be formed by deposition. When the material of the insulating layer 230 is benzocyclobutene, polyester or acrylic resin, the insulating layer can be formed by a printing coating method. Generally, the insulating layer 230 has a thickness of 0.5 nm to 100 μm. In the embodiment, the insulating layer 230 is formed by printing a benzocyclobutene to cover the surface of the gate 220. The insulating layer 230 has a thickness of about 1 micrometer.

A semiconductor layer 240 is formed on the surface of the insulating layer 230 in the step (s133). The material of the semiconductor layer 240 is amorphous germanium, polycrystalline germanium, an organic semiconductor polymer, a nano film, a nanowire structure or a nanotube. The semiconductor layer 240 can be formed by different methods depending on the kind of material forming the semiconductor layer 240. Specifically, when the material of the semiconductor layer 240 is amorphous germanium or polycrystalline germanium, the semiconductor layer 240 can be formed by chemical vapor deposition. When the material of the semiconductor layer 240 is an organic semiconductor polymer or a nano film, the organic semiconductor polymer or the carbon nanotube film can be coated by directly adhering or printing an organic semiconductor polymer or a carbon nanotube film. The semiconductor layer 240 is formed by coating or adhering to the surface of the insulating layer. When the material of the semiconductor layer 240 is a nanotube or a nanowire structure, the nanotube or nanowire structure can be transferred to the surface of the insulating layer 230 by a transfer method. Generally, the semiconductor layer 240 has a thickness of 0.5 nm to 100 μm. In this embodiment, the material of the semiconductor layer 240 is a carbon nanotube film having a thickness of 1 micrometer.

In the step (s134), the material of the source 251 and the drain 252 should have good conductivity. Specifically, the material of the source 251 and the drain 252 may be a conductive material such as a metal, an alloy, an ITO, an ATO, a conductive silver paste, a conductive polymer or a carbon nanotube film. The source 251 and the drain 252 can be formed by different methods depending on the type of material forming the source 251 and the drain 252. Specifically, when the material of the source 251 and the drain 252 is metal, alloy, ITO or ATO, the source 251 and the drain 252 may be formed by evaporation, sputtering, deposition, masking or etching. When the material of the source 251 and the drain 252 is a conductive silver paste, a conductive polymer or a carbon nanotube film, the conductive silver paste, the conductive polymer or the carbon nanotube film may be used. Directly adhered or printed on the surface of the semiconductor layer 240 to form a source 251 and a drain 252. Generally, the source 251 and the drain 252 have a thickness of 0.5 nm to 100 μm, and the source 251 to the drain 252 have a distance of 1 μm to 100 μm.

In the present embodiment, a source electrode 251 and a drain electrode 252 are formed on the semiconductor layer 240 by an etching method similar to the formation of the gate electrode 220, thereby forming the thin film transistor 20. The source 251 and the drain 252 are electrically connected to the semiconductor layer 240, and the source 251 and the drain 252 are spaced apart from each other. The source 251 and the drain 252 have a thickness of 1 μm and the source 251 to the drain 252 have a distance of 50 μm. The material of the source 251 and the drain 252 is aluminum metal.

The step s140 removes the hard substrate 12 to form a flexible semiconductor device by directly peeling the hard substrate 12 and the bonding layer 14 from the flexible substrate 16 by an external force. In this embodiment, when the glass hard substrate 12 and the bonding layer 14 are separated from the polyethylene terephthalate flexible substrate 16, the transparency of the polyethylene terephthalate flexible substrate 16 is hardly changed, and still has Softness. Of course, this step can also be used to separate the hard substrate 12 from the flexible substrate 16, such as a heating method or an etching method. Thus, the bottom gate type flexible base film transistor 20 of the present embodiment is obtained.

It will be appreciated that thin film transistor arrays, such as top gate type thin film transistor arrays, can also be fabricated using methods similar to those of this embodiment. Forming the top gate type thin film transistor array specifically includes the steps of: providing a hard substrate having a surface; providing a flexible substrate, the flexible substrate having a first surface and a second surface opposite to the first surface Surface, the a first surface of the flexible substrate is fixed on the surface of the hard substrate; a top gate type thin film transistor array is formed directly on the second surface of the flexible substrate by a semiconductor processing process; and the hard substrate is removed to form a flexible top gate Thin film transistor array.

Referring to FIG. 4 and FIG. 5, a second embodiment of the present invention provides a method for manufacturing a flexible substrate light-emitting diode, which is substantially similar to the first embodiment, and is different in the present embodiment. A light emitting diode processing process is directly performed on the substrate to form a light emitting diode. The embodiment specifically includes the following steps: (s210) providing a hard substrate 12 having a surface 122; (s220) providing a flexible substrate 16, the flexible substrate 16 having a first surface 162 and the first The second surface 164 of the surface 162 is oppositely disposed, the first surface 162 of the flexible substrate 16 is fixed to the surface 122 of the hard substrate 12; (s230) is directly applied to the second surface 164 of the flexible substrate 16 by a semiconductor processing process. Forming a light emitting diode; (s240) removing the hard substrate 12 to form a flexible light emitting diode 30.

The material and properties of the hard substrate in the step s210 are the same as those of the hard substrate in the step s110 in the first embodiment.

The specific steps in the step s220 are the same as the specific steps in the step s120 in the first embodiment.

In the step s230, the method for forming the light emitting diode directly on the second surface 164 of the flexible substrate 16 by using a semiconductor processing process includes the following steps: (s231) sequentially forming a first surface on the second surface 164 of the flexible substrate 16. The semiconductor layer 310, an active layer 320, and a second semiconductor layer 330 (s232) etching the second semiconductor layer 330, the active layer 320 until the surface of the first semiconductor layer 310 is exposed; and (s233) forming a second electrode 332 on the surface of the second semiconductor layer 330, such that the first The second electrode 332 is electrically connected to the second semiconductor 330, and a first electrode 312 is formed on the surface of the first semiconductor layer 310, such that the first electrode 312 is electrically connected to the first semiconductor 310, and the first electrode 312 and the first electrode The two electrodes 332 are electrically insulated.

In the step s231, the first semiconductor layer 310, the active layer 320 and the second semiconductor layer 330 are epitaxially grown on the second surface 164 of the flexible substrate 16 by metal organic chemical vapor deposition (MOCVD).

The first semiconductor layer 310 and the second semiconductor layer 330 may be of an N-type semiconductor layer or a P-type semiconductor layer, and the first semiconductor layer 310 and the second semiconductor layer 330 are different in type. The N-type semiconductor layer has a function of providing an electron moving place. The P-type semiconductor layer has a function of providing a place where holes move. The material of the N-type semiconductor layer includes one of materials such as N-type gallium nitride, N-type gallium arsenide, and N-type copper phosphide. The material of the P-type semiconductor layer includes one of P-type gallium nitride, P-type gallium arsenide, and P-type copper phosphide. In the present embodiment, the material of the first semiconductor layer is N-type gallium nitride having a thickness of 2 μm, and the material of the second semiconductor layer is P-type gallium nitride having a thickness of 0.3 μm. The active layer 320 is a quantum well structure comprising one or more quantum well layers. The material of the quantum well layer is one of indium gallium nitride, indium gallium aluminum nitride, gallium arsenide, aluminum gallium arsenide, indium gallium phosphide, indium phosphide or indium gallium arsenide. In this embodiment, the active layer has a two-layer structure with a thickness of 0.3 μm, and the material of one layer is nitrided. Indium gallium, the other layer of material is gallium nitride.

The step s232 etches the second semiconductor layer 330 and the active layer 320 by an etching process until the first semiconductor layer 310 is exposed. The etching technique includes a wet etching technique and a dry etching technique. In this embodiment, the etching technique employed is an inductively coupled plasma etching technique in the dry etching technique.

The step s233 may be performed by using a physical vapor deposition method, such as an electron beam evaporation method, a vacuum evaporation method, and an ion sputtering method, to form a second electrode 332 on the surface of the second semiconductor layer 330 on the first semiconductor layer 310. The surface forms a first electrode 312. The material of the first electrode 312 and the second electrode 332 includes one of titanium, aluminum, nickel and gold or any combination thereof. The first electrode 312 and the second electrode 332 are at least one layer structure. In this embodiment, the titanium/gold (a layer of titanium and a layer of gold) second electrode 332 and the first electrode 312 are prepared by electron beam evaporation.

In the step s240, the hard substrate 12 is removed to form the flexible light emitting diode 30. The method of removing the hard substrate 12 and the bonding layer 14 is the same as the method of removing the hard substrate 12 and the bonding layer 14 in step s140 in the first embodiment.

The flexible semiconductor device manufacturing method provided by the embodiment of the invention has the following advantages: First, since the flexible substrate is disposed on the uncured or unsolidified bonding layer, the curl and surface undulation generated by the flexible substrate itself are avoided. a phenomenon that enables the flexible substrate to be better combined with the bonding layer, so that the surface of the flexible substrate is relatively flat, and further, a flexible semiconductor device can be formed directly on the second surface of the flexible substrate by using a semiconductor processing process, without Pre-forming a flexible semiconductor device, A flexible substrate is then bonded to the flexible semiconductor device to form a flexible semiconductor device. Therefore, the manufacturing method of the flexible semiconductor device provided by the embodiment of the invention has the characteristics of simple method and easy operation. Secondly, in the embodiment of the present invention, the method of directly peeling off the flexible substrate and the hard substrate does not affect the transparency of the flexible substrate, and the method is simple.

In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

12‧‧‧ Hard substrate

240‧‧‧Semiconductor layer

122‧‧‧ Surface of hard substrate

251‧‧‧ source

14‧‧‧ bonding layer

252‧‧‧Drain

16‧‧‧Soft substrate

30‧‧‧Lighting diode

162‧‧‧The first surface of the soft substrate

310‧‧‧First Semiconductor

164‧‧‧Second surface of soft substrate

312‧‧‧First electrode

18‧‧‧One side edge of the first surface of the soft substrate

320‧‧‧active layer

20‧‧‧film transistor

330‧‧‧Second Semiconductor

220‧‧‧Gate

332‧‧‧second electrode

230‧‧‧Insulation

1 is a process flow diagram of a prior art fabrication of a flexible semiconductor device.

2 is a flow chart of a method of fabricating a flexible semiconductor device according to a first embodiment of the present invention.

3 is a flow chart showing a manufacturing process of a flexible semiconductor device according to a first embodiment of the present invention.

4 is a flow chart of a method of fabricating a flexible semiconductor device according to a second embodiment of the present invention.

FIG. 5 is a flow chart showing a manufacturing process of a flexible semiconductor device according to a second embodiment of the present invention.

12‧‧‧ Hard substrate

20‧‧‧film transistor

122‧‧‧ Surface of hard substrate

220‧‧‧Gate

14‧‧‧ bonding layer

230‧‧‧Insulation

16‧‧‧Soft substrate

240‧‧‧Semiconductor layer

162‧‧‧The first surface of the soft substrate

251‧‧‧ source

164‧‧‧Second surface of soft substrate

252‧‧‧Drain

18‧‧‧One side edge of the first surface of the soft substrate

Claims (13)

A method of fabricating a flexible semiconductor device, comprising the steps of: providing a hard substrate having a surface; providing a flexible substrate having a first surface and a second surface opposite the first surface a surface, the first surface of the flexible substrate is fixed to the surface of the hard substrate; a semiconductor device is directly formed on the second surface of the flexible substrate by a semiconductor processing process; and the hard substrate and the flexible substrate are separated to form A flexible semiconductor device. The method for manufacturing a flexible semiconductor device according to claim 1, wherein the flexible substrate is made of polyethylene terephthalate, polyethylene naphthalate, polyether oxime, polypropylene, Polypropylene sulfide, polycarbonate, polyether phthalimide, polyphenylene sulfide, polyphenylene ether, polyfluorene or polyphthalic acid amine. The method of manufacturing a flexible semiconductor device according to claim 1, wherein the method of fixing the first surface of the flexible substrate to the surface of the hard substrate comprises the steps of: forming a surface of the hard substrate a bonding layer; when the bonding layer is uncured or not solidified, contacting one side edge of the first surface of the flexible substrate with the bonding layer, and placing the flexible substrate from the edge a layer; and curing the bonding layer. The method of manufacturing a flexible semiconductor device according to claim 3, wherein the method of forming a bonding layer on the surface of the hard substrate comprises: providing a material of a bonding layer; and cleaning a surface of the hard substrate And coating the material of the bonding layer on the surface of the cleaned hard substrate. The method for manufacturing a flexible semiconductor device according to the fourth aspect of the invention, wherein the method of cleaning the hard substrate is: pre-cleaning the hard substrate with acetone, isopropyl alcohol or ethanol; washing the deionized water a hard substrate; and plasma treatment of the hard substrate. The method of manufacturing a flexible semiconductor device according to claim 3, wherein when the bonding layer is uncured or not solidified, one side edge of the first surface of the flexible substrate is brought into contact with the bonding a layer and gradually contacting the first surface of the flexible substrate with the bonding layer such that the flexible substrate is placed in the bonding layer. The method of manufacturing a flexible semiconductor device according to claim 3, wherein the step of curing the bonding layer further comprises vacuum processing the flexible substrate and the bonding layer, removing the flexible substrate and Bubbles between the interfaces of the bonding layer. The method for manufacturing a flexible semiconductor device according to claim 3, wherein the material of the bonding layer is polyimide, epoxy resin, acrylic resin, polyester, polyamide, cerium resin, melamine. Resin, phenol resin or polydimethyl siloxane. The method of manufacturing a flexible semiconductor device according to claim 1, wherein the semiconductor processing process comprises sputtering, evaporation, chemical deposition, masking or etching. The method of manufacturing a flexible semiconductor device according to claim 1, wherein the semiconductor device comprises a thin film transistor, a field effect transistor, a light emitting diode or a photoresistor. The method of manufacturing a flexible semiconductor device according to claim 10, wherein the semiconductor device is a thin film transistor, and the method for forming a thin film transistor on the second surface of the flexible substrate comprises the steps of: forming a a gate is formed on the second surface of the flexible substrate; an insulating layer is formed to cover the gate; a semiconductor layer is formed on the surface of the insulating layer; and a source and a drain are formed on the surface of the semiconductor layer, and The source and drain are spaced apart and electrically connected to the semiconductor layer to form a thin film transistor. The method of manufacturing a flexible semiconductor device according to claim 11, wherein the semiconductor device is a light emitting diode, and the method for forming a light emitting diode on the second surface of the flexible substrate comprises the following steps: The second surface of the flexible substrate sequentially forms a first semiconductor layer, an active layer and a second semiconductor layer; the second semiconductor layer and the active layer are etched until the surface of the first semiconductor layer is exposed; A surface of the second semiconductor layer forms a second electrode, and a first electrode is formed on a surface of the first semiconductor layer. The method of manufacturing a flexible semiconductor device according to claim 1, wherein the method of separating the hard substrate from the flexible substrate comprises an external force peeling method, a heating method, or an etching method.