TWI472654B - Deposition cartridge for production materials via the chemical vapor deposition process - Google Patents

Description

a deposition cassette for producing materials by a chemical vapor deposition process

This invention relates to the field of chemical vapor deposition processes, and more particularly to deposition cassettes for the production of materials by chemical vapor deposition processes.

U.S. Patent Application Serial No. 12/597,151, filed on Oct. 22, 2009, the &apos

1. The low average surface area of the polycrystalline bar has resulted in a low volume deposition rate and thus a low Siemens reactor productivity (measured as the mass metric of the polycrystalline germanium produced over a specified period of time, typically metric tons per year);

2. a low ratio of surface area to the volume of the polycrystalline bar, which in order to maintain a meaningful deposition volume, the surface temperature required for deposition for a prolonged period of time results in high energy consumption;

3. The labor-intensive and easily polluting nature of the bar harvesting process.

The invention described in the '151 patent application overcomes the first two limitations described above by providing a deposition plate that provides high surface area electrical heating. Bismuth is deposited on these deposition plates at a high volume rate via a CVD process and then recovered by additional heating of the deposition plates. This additional heating causes a very thin layer of liquefaction of the polycrystalline germanium deposited on the interface of the deposition plate, which can be pulled mechanically or by gravity from the deposition plate to open the solid outer shell of the deposited polycrystalline silicon. The use of large size deposition plates in a Siemens reactor increases the productivity of the reactor relative to the use of conventional seed bars, while the use of small size deposition plates reduces the energy consumption of the reactor while maintaining the same productivity relative to the use of seed bars.

However, the use of a deposition plate alone does not address the third limitation of the labor intensive and prone to contamination nature of the above-described harvesting process. In order to overcome this limitation, the invention of the '151 patent application also provides a new deposition reactor for use with a deposition plate in which both deposition and recovery can occur within the reactor.

Although it has significant advantages over conventional seed bars, it is shown that the deposition plate itself of the '151 patent application itself encounters certain limitations. Although the '151 patent application points out many suitable materials for constructing these deposition plates such as tungsten, tantalum nitride, tantalum carbide, graphite, alloys, composites, and mixtures thereof, it is stated that these deposition plates are several millimeters thick and up to several The length and height of the meter. It further illustrates that these deposition plates are energized by connecting the negative electrode to one end of the deposition plate and connecting the positive electrode to the other end.

With this configuration, it is difficult to evenly distribute the current flow across the entire deposition plate due to the short circuit, so it is difficult to achieve an average heating of the entire deposition plate surface to a desired temperature. This short circuit is only exacerbated when the material deposited on the uninsulated surface of the deposition plate is a semiconductor such as a polysilicon which is electrically conductive at high temperatures. Thus the effective deposition surface area of the deposition plate is less than the total deposition surface area of the deposition plate (although still much higher than the average deposition surface area of the polycrystalline bar). Since the deposition rate, that is, the productivity is proportional to the average deposition surface area, the productivity of the reactor that can accommodate the total size of these deposition plates is not maximized because the ratio of deposition surface area to total surface area is not maximized. The result of reactor operation at this type of production yields production costs that are not minimized.

The deposition plate is also implicated in the entire surface area during shell recovery The optimum deposition temperature is reached. Some areas of the deposition plate may reach temperatures lower than the optimum deposition temperature but still high enough to allow some of the outer casing to form. During recovery of the outer casing, it may not be possible to rapidly heat these areas to or above the melting point of the material for the deposition plate, resulting in over-melting of the outer casing in the proper heating area or resulting in only partial disassembly and recovery. Finally, these deposition plates do not prevent deposition on the surface that may interfere with the separation of the outer casing.

The present invention provides an electrically heated deposition cassette having a large deposition surface area, which is composed of a distribution bar and a solid deposition plate or a separate corrugated wave deposition plate, and can be incorporated into an electrical insulation layer or a separator. And overcome the limitations of the above deposition plate. The desired amount of current can be distributed throughout the desired cross-sectional area of the deposition cassette so that the desired temperature can be achieved and maintained on all desired surfaces of the deposition cassette.

The ability to achieve the desired temperature on all desired surfaces by distributing the desired amount of current throughout the desired cross-sectional area and proper insulation allows the deposition cassette to have an effective deposition surface area that is maximized relative to its total surface area. This maximizes the productivity of the reactor in which the deposition cassette can be accommodated, thus minimizing production costs. The recovery of the material shell is simplified by the simultaneous heating characteristics of the deposition cassette and its selective heating in addition to external cooling to limit deposition on the obstructing surface.

These deposition cassettes can be used in any amount by any deposition reactor, including a Siemens reactor that replaces the seed bars, and can be oriented in any orientation, including vertical and/or horizontal. The deposition of the cassette via additional heating can be achieved in the reactor or outside the reactor by first collecting the crusted deposition cassette. The self-depositing cassette removes the outer casing to liquefy the thin layer of the outer casing at the deposition cassette interface. The outer casing can then be completely separated from the deposition cassette by applying any force, including gravity or mechanical force. The uses and benefits of the deposition cassette can be extended to all materials that can be produced via a CVD process, including but not limited to polysilicon.

An electrically heated deposition cassette having a large deposition surface area, consisting of a distribution bar and a solid deposition plate or a separate corrugated wave deposition plate, and may be incorporated into an electrical insulation layer or a separator. The desired amount of current can be distributed throughout the desired cross-sectional area of the deposition cassette so that the desired temperature can be achieved and maintained on all desired surfaces of the deposition cassette.

The deposition cassette is used to produce materials via a chemical vapor deposition ("CVD") process, including but not limited to polysilicon. In a CVD process, a deposition gas mixture containing molecules or atoms of material to be produced is contacted with a heated deposition surface which causes these molecules or atoms to separate from the deposition gas mixture and deposit onto the deposition surface.

These deposition surfaces are typically thin strips of rods of the material to be produced. As the more and more materials are deposited on them, these bars become larger and larger, and the production is completed. However, the low average deposition surface area of these bars limits the productivity of the reactors that can accommodate their final size because productivity is directly proportional to the average deposition surface area. Large reactors using large amounts of raw materials and used to produce small quantities of products result in high production costs.

Electrically heated deposition plates having a large surface area have been proposed to overcome the limitations of seed bars, but they do not provide insulation that distributes the desired amount of current throughout its desired cross-sectional area or its surface. As a result, these deposition plates become short-circuited, in particular, a layer of conductive deposition material is constructed on the surface thereof, and is effective When the deposition surface area is less than its total surface area, the productivity of the reactor in which it can accommodate its overall size is again limited, although its production rate is still significantly higher than that of a reactor equipped with a seed bar. Furthermore, the recovery of the deposition shell of the material is prevented by simultaneously heating all points of the deposition surface to or above the melting point of the material and preventing deposition on the surface of the deposition plate which would hinder the separation of the outer casing by external cooling ( It is complicated by increasing the temperature of the deposition surface to or above the melting point of the material, so that the thin layer of material on the deposition surface interface is liquefied and the outer shell is removed from the deposition plate.

The ability to achieve the desired temperature on all desired surfaces by distributing the desired amount of current throughout the desired cross-sectional area and proper insulation allows the deposition cassette to have an effective deposition surface area that is maximized relative to its total surface area. This maximizes the productivity of the reactor in which the deposition cassette can be accommodated, thus minimizing production costs. The recovery of the material shell is simplified by the simultaneous heating characteristics of the deposition cassette and its selective heating in addition to external cooling to limit deposition on the obstructing surface.

US Patent Application Serial No. 12/597,151 ("151 Patent Application"), filed on Oct. 22, 2009, the disclosure of the high-purity bismuth deposition via a high surface area gas-solid or gas-liquid interface and recovery via liquid phase The entire disclosure of this patent application is incorporated by reference. The name of the same application (the application number: which is known to be added immediately) is a common application for the deposition of a material by a chemical vapor deposition process, which is incorporated by reference in its entirety. This patent application also claims the provisional patent application No. 61504148 ("148 Provisional Patent Application") filed on July 1, 2011, A high-purity amorphous and crystalline bismuth and other materials deposition cassette, and a temporary patent application ("145 Provisional Patent Application") filed on July 1, 2011, which produces high purity amorphous and The priority of a cassette reactor of crystalline ruthenium and other materials, both of which are incorporated herein in their entirety. In the '151 patent application, the term "deposited plate" is defined as the surface on which the crucible is deposited, but for the purpose of enhancing clarity for the purpose of illustrating the actual physical components of this patent application, the "deposited surface" is defined as The surface on which the material is deposited, the "deposited plate" is defined as the actual solid plate on which the material (preferably on both sides and one or more edges) is deposited (relative to its edge, significantly larger on its sides) Object of surface area). Therefore, the sides and edges of the deposition plate are deposition surfaces. The term "deposited cassette" is defined as a combination of a distribution bar and a solid deposition plate or a simple relief pattern patterned deposition plate, either of which may be incorporated into an insulating layer or spacer. The term "Siemens reactor" is defined as a deposition reactor originally designed to utilize seed bars.

In order to achieve resistive heating of the material, current must be passed through it. However, current always travels through the path of minimum resistance. The formula for the resistance is as follows: R = ρ * L / S

Where: R = resistance through a particular path of a particular material, unit ohm ρ = volume resistivity of the material, unit ohms * m L = length of the path, unit meters S = cross-sectional area of the path through which the current travels

If the electrode is connected to the two corners above the square plate of conductive material and the power switch is turned on, the main current will easily cross the square plate. The face moves between one electrode and the other in a straight and narrow path, with little current reaching the lower section of the square plate. Similarly, if two separate materials are connected in parallel, the primary current will easily pass through the material with lower resistance. If the two separate pieces of material are made of the same material, the primary current will tend to pass through the piece of material having the lowest length to cross-sectional area ratio because the piece of material will have a lower electrical resistance. If the two separate materials have the same ratio of length to cross-sectional area but are made of different materials, the primary current can easily pass through the material having a lower volume resistivity.

Using the above principles it is possible to select a specific volume resistivity and size to direct current flow along the desired path. In the case of a deposition plate, the goal is to achieve an average heating of the entire surface to the desired temperature, which requires the current to pass equally through the entire cross-sectional area of the deposition plate from one side to the other. This task becomes distributed along the entire edge of one of the deposition plates and collected along the entire opposite edge. This can be achieved by attaching the distribution bar to both edges such that the resistance of the bar is lower than the resistance of the deposition plate. In this manner, the current will first pass down the entire length of a distribution bar before passing the entire section of the deposition plate that is to be averaged away by the opposing bars. If the distribution bar and the deposition plate are made of the same material, the ratio of the length of the bar to the cross-sectional area needs to be smaller than the ratio of the length of the deposition plate to the cross-sectional area. Even if the deposition plate is quite thin, if it is high enough, the ratio can be quite low. As a result, the distribution bar must have a sufficiently large cross-sectional area to ensure that the current travels down the entire length first. Suitable materials for the configuration in which the distribution bar and the deposition plate are made of the same material include, but are not limited to, tungsten, tantalum nitride, tantalum carbide, graphite, alloy, And its composites.

As a further alternative configuration, the distribution bar can be made of a material having a lower volume resistivity than the material of the deposition plate, thereby reducing the cross-sectional area of the bar. Suitable combinations of materials of this configuration include, but are not limited to, graphite strips of distributed bars and tantalum carbides of deposited plates, or tungsten of distributed bars and tantalum nitride of deposited plates.

As yet another alternative configuration, it is possible to machine the strip pattern pattern into the deposition plate such that the current travels up and down through a narrow path such that the path is from one side of the deposition plate to the other side. The functionality of the rod is directly integrated into the deposition plate. This configuration provides a large surface area resistance heating while the current is still evenly distributed throughout the relatively narrow path.

In any of the above configurations, it may be desirable to apply a layer of electrically insulating material over the entire deposition surface of the distribution bars and deposition plates. Preferably, the insulating material has a volume resistivity that is much higher than the material of the distribution bar and the deposition plate to ensure that a majority of the current remains in the bar and the deposition plate without passing through the material deposited on the surface of the insulating layer. Medium, such as polycrystalline germanium. Polycrystalline germanium is a semiconductor whose resistivity drops significantly as its temperature increases and is fairly conductive at an average deposition temperature of 1150 °C. Furthermore, as the deposition progresses and the thickness of the polycrystalline silicon shell increases, the ratio of its length to the cross-sectional area decreases, further reducing its electrical resistance. Without the insulating layer, as the outer casing changes thickness, more and more current will begin to flow through the outer casing, effectively shorting the deposition plate. The deposition plate will stop heating properly and the further deposition of polysilicon will shrink by itself. Suitable combinations of materials to prevent this include, but are not limited to, the distribution of bars and deposits of graphite and insulating layers of tantalum carbide or tantalum nitride. This insulating layer can be included in many forms but Not limited to chemical vapor deposition, pre-ceramic polymer pastes, and ceramic matrix composites are applied to the distribution bars and deposition plates.

Figure 1 shows a preferred embodiment of a deposition cassette 2 incorporating the above described distribution and insulation characteristics. In the preferred embodiment, the deposition cassette 2 is comprised of a solid deposition plate 34 attached to either end of two distribution bars 33. The electric resistance of the distribution bar 33 is lower than the electric resistance of the solid deposition plate 34 so that the current flows down the entire distribution bar 33 before flowing evenly across the entire cross section of the solid deposition plate 34 and taken away by the other distribution bars 33. length. This causes an average resistance heating of the entire deposition surface. This entire assembly (with the exception of the end of the distribution bar 33, which must remain uncovered to achieve good electrical contact with other electrical components) is covered with an insulating layer 52 that blocks current from the distribution bar 33 and the solid deposition plate 34. It flows to a material (not shown) deposited on the deposition cassette 2.

2 is a view showing a preferred embodiment of the deposition cassette 2 in which the distribution bars 33 and the solid deposition plates 34 are functionally integrated into the single embossed waveform deposition plate 51. The textured pattern of the slits machined into the slits in the single embossed waveform deposition plate 51 creates a tortuous path that provides an overall large surface area yet still narrow enough that the current averages across its cross-sectional area. The first and last reticular wave legs are extended to form electrode tabs 53 that are connected to other electrical components. The entire deposition cassette 2 except the electrode tabs 53 is covered with an insulating layer 52 which also creates a continuous deposition surface by closing the reticular wave slits. The thermal conductivity of the insulating layer 52 is such that no thermal gradient spread is detected on the surface directly on the reticular waveform path and those directly between the regions of the reticular wave slit. This average heating allows the ruthenium to be deposited on the deposition cassette 2 On the entire surface.

Both Figures 1 and 2 show a preferred embodiment in which the deposition cassette 2 is deposited along the top edge of the deposition cassette 2 by an adjacent external cooling source such as a water cooled reactor wall. The deposited material thus forms an outer casing covering the remaining three edges and both sides of the deposition cassette 2 and is recovered in a direction relative to the unshelled edge upon subsequent further heating.

3 is a preferred embodiment of a deposition cassette 2 incorporating a embossed waveform deposition plate having a wider outer path 54 and an insulating layer having a wider outer edge 55. When the current passes through the deposition plate having a wider outer path 54, the external path is heated to a lesser extent than the inner retrace waveform path because its cross-sectional area is larger and its resistance is lower. The insulating layer having a wider outer edge 55 dissipates this lesser heating, and even further reduces the edge of the deposition cassette 2 below the temperature required for appreciable deposition via conduction and convection losses. The outer casing is prevented from being formed around all the edges of the deposition cassette 2, i.e., it is limited to only the two sides of the deposition cassette 2, and the outer casing can be unobstructed and recovered in multiple directions upon subsequent further heating.

Figure 4 is a diagram showing a preferred embodiment of a deposition cassette 2 incorporating a textured-wafer deposition plate having a separate path 56. These external routes remain unenergized during the deposition step, so that the edges of the deposition cassette 2 are colder than the sides and therefore do not form an outer casing. During the recovery step, it is energized along the inner path to provide any additional heating that may be required to form the edges and center of the outer casing on both sides of the deposition cassette 2 while disassembling. Simultaneous rapid disassembly of all areas of the enclosure minimizes liquefaction of the interface so that contaminants can diffuse into the enclosure and minimize energy consumption.

The deposition cassette 2 can be used in any deposition reactor, including a purpose-built cassette reactor and a Siemens reactor. Figure 5 is a diagram showing a preferred embodiment of a deposition cassette 2 array for use in a cartridge reactor constructed for a specific purpose. There are 16 deposition cassettes 2 connected to the two distribution bars 32 by electrode holders 57 attached to their electrode tabs 53. The distribution bars 32 connect the deposition cassette 2 in parallel or in series to an AC or DC power supply. As shown, the distribution bars 32 are positioned within the cassette reactor and are in contact with other electrical components via connection points in the reactor walls. However, it is not excluded that the electrode tab 53 is in contact with an externally disposed distribution bar or other electrical component via its own individual connection point through the reactor wall.

In the preferred embodiment, each of the deposition cassettes 2 is 42 cm high, 75 cm long, and the spacing between the deposition cassettes 2 is 5 cm. This spacing allows a reasonable 2 cm thickness of the outer casing to develop on each side of the deposition cassette 2 while providing an appropriate 1 cm gap of deposition gas flow between the outer casings by the end of the deposition cycle. In addition, the thickness of the shell and the width of the gap can be adjusted as desired to optimize deposition cycle time and deposition gas flow characteristics. As shown, the total volume of all 16 arrays of deposited cassettes 2 is approximately 75 cm x 75 cm x 42 cm, which is contemplated to conform to the thickness of the outer casing and is intended to conform to the interior of the 85 cm x 85 cm crucible used to make the polycrystalline ingot.

However, the size, amount and spacing of the deposition cassette 2 can be easily changed so that it conforms to the interior of most of the dimensions. This dimensional elasticity can be used as a crystallization technology for continuous improvement and can be used more and more. In another preferred embodiment, the deposition cassette 2 array can also be deposited by causing the deposition cassette 2 to face continuously toward the side of the array in the middle of the deposition cassette 2. The flat profile itself becomes circular and the size of the deposition cassette 2 is adjusted to conform to the interior of the crucible having a circular flat section. This preferred embodiment allows the deposition cassette 2 to be used to produce a single crystal ingot in a Czochralski crystallization process that involves re-extracting a cylindrical single crystal from a melt that is inserted into a circular crucible.

The deposition cassette 2 is oriented vertically with the electrode tabs 53 pointing upward. This orientation causes the top edge of the deposition cassette 2 to be adjacent to the water stave of the reactor top assembly, with the result that material is prevented from depositing onto these top edges. The deposition of material is limited to the two sides of the deposition cassette 2 at some distance below the top edge and the remaining three edges such that all surfaces on which deposition occurs are oriented in the same direction, i.e., oriented. This facilitates the subsequent step of heating the deposition cassette 2 to or above the melting temperature of the material and separating the outer casing by applying a unidirectional force, such as gravity, from the deposition cassette 2. However, the deposition cassette 2 is not excluded from positioning in any direction and any force other than gravity is used to separate the outer casing from the deposition cassette 2.

Figure 6 shows a preferred embodiment of a deposition cassette 2 for use in a Siemens reactor. The deposition cassette 2 is fabricated to have the same dimensions as the end of the polycrystalline bar pair, which is about 200 to 240 cm in height and about 40 to 50 cm in length. The electrode tab 53 is pointed downward and shaped to align with the Siemens reactor electrode 44 for attachment to the electrode holder 57. As a result, the deposition cassette 2 can be compliant with the Siemens reactor with little or no mechanical or electrical modification to achieve the goal of increasing production capacity with the same unit energy consumption or reducing unit energy consumption with the same production capacity. To illustrate this point, Figure 7 shows the outline of the Siemens reactor electrode 44. The 18 pairs of Siemens reactors, the polycrystalline rods 59 that started operation, and the polycrystalline rods 43 that finished the operation, Figure 8 shows a preferred embodiment of the same 18 pairs of Siemens reactors that conform to the deposition cassette 2. The deposition cassette 2 occupies the same space as the polycrystalline bar and conforms to the same electrode while providing a much higher average deposition surface area.

Figures 9 through 11 show a preferred embodiment of how the deposition cassette 2 is installed in a Siemens reactor. The electrode tabs 53 are each screwed to two L-shaped electrode holders 57 which are then screwed to the graphite support of the Siemens reactor electrode 44. The electrode tabs 53 and the electrode holders 57 integrated into the deposition plate 54 are preferably made of a conductive and structurally suitable material, including but not limited to a carbon-carbon composite. The formation of the polycrystalline silicon casing along the bottom edge of the deposition cassette 2 can be achieved by (i) depositing the design of the cassette 2, the preferred embodiment of which is shown in Figures 3-4, (ii) the bottom edge is adjacent to the water cooled Siemens Reactor holders 47, (iii) are made of a suitable insulating, non-contaminating, and heat resistant material (not shown) including, but not limited to, tantalum carbide, tantalum nitride, and various ceramics that block deposition gases and The bottom edge contact, and any combination of (iv) (i), (ii), and (iii) are prevented.

Figures 12-14 show a preferred embodiment of a deposition cassette 2 that is particularly suitable for use in a Siemens reactor. This deposition cassette 2 has a U-shaped deposition plate 60 which does not have an insulating layer but is replaced by an insulating spacer 58 which conforms between its both sides. The current flows along a U-shaped deposition plate 60 (which is essentially a two-way textured corrugated plate), flowing between a Siemens reactor electrode 44 and others, thus heating the U-shaped deposition plate 60 and causing material deposition. On it. As a result, the two sides of the U-shaped deposition plate 60, and the outer casing formed thereon are not Short circuit. The insulating spacer 58 also shields the entire inner edge of the U-shaped deposition plate 60 from forming an outer casing and does not interfere with the separation of the U-shaped deposition plate 60 in the direction of the rounded end.

2‧‧‧Deposition box

32‧‧‧ distribution bars

33‧‧‧ distribution bars

34‧‧‧Solid deposition board

43‧‧‧ Polycrystalline bar

44‧‧‧Reactor electrode

47‧‧‧Reactor holder

51‧‧‧Resist wave deposition board

52‧‧‧Insulation

53‧‧‧electrode tabs

54, 56‧‧‧ External routes

55‧‧‧ outer edge

57‧‧‧electrode holder

58‧‧‧Insulation spacer

59‧‧‧ Polycrystalline bar

60‧‧‧U-shaped sedimentary plates

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a front elevational view and a plan view showing a preferred embodiment of a deposition cassette having a solid deposition plate and a distribution bar.

Figure 2 is a front elevational view and a plan view showing a preferred embodiment of a deposition cassette having a textured waveform deposition plate.

Figure 3 is a front elevational view and a plan view showing a preferred embodiment of a deposition cassette having a textured waveform deposition plate and an outer edge of the cooler.

Figure 4 is a front elevation and plan view showing a preferred embodiment of a deposition cassette having a textured waveform deposition plate and separate external paths.

Figure 5 is a perspective view showing a preferred embodiment of a deposition cassette of a helium reactor.

Figure 6 is a perspective view showing a preferred embodiment of a deposition cassette of a Siemens reactor.

Figure 7 is a plan view showing 18 pairs of Siemens reactors with polycrystalline bar rods at the beginning and end of the deposition operation.

Figure 8 is a plan view showing a preferred embodiment of one of the 18 pairs of Siemens reactors having a deposition cassette.

Figure 9 is a front elevational view showing a preferred embodiment of a deposition cassette disposed in a Siemens reactor.

Figure 10 is a plan view showing a preferred embodiment of a deposition cassette housed in a Siemens reactor.

Figure 11 is a front elevational view showing a preferred embodiment of a deposition cassette disposed in a Siemens reactor.

Figure 12 is a front elevational view showing a preferred embodiment of a U-shaped deposition cassette housed in a Siemens reactor.

Figure 13 is a plan view showing a preferred embodiment of a U-shaped deposition cassette housed in a Siemens reactor.

Figure 14 is a front elevational view showing a preferred embodiment of a U-shaped deposition cassette housed in a Siemens reactor.

32‧‧‧ distribution bars

34‧‧‧Solid deposition board

52‧‧‧Insulation

Claims (14)

An electrically heated deposition cassette for use in the production of materials via a chemical vapor deposition process having (i) a higher surface area to volume ratio than a seed bar pair, and (ii) a higher starting point than a seed bar pair The ratio of the effective deposition surface area to the final effective deposition surface area, and (iii) the higher effective deposition surface area to total surface area ratio of the base deposition plate, which is achieved and maintained by all desired surfaces of the deposition cassette. This is achieved by the temperature, which is then achieved by distributing the desired amount of current across all desired cross-sectional areas of the deposition cassette. The deposition cassette of claim 1, wherein the desired amount of current is distributed over all of the desired cross-sectional areas of the deposition cassette by attaching a strip of suitable material and size to a suitable material and size. The solid distribution plate is such that the distribution bar distributes the current evenly over the entire cross-sectional area of the solid distribution plate. The deposition cassette of claim 2, wherein the current of the required amount is distributed in all the desired cross-sectional areas of the deposition cassette by covering the distribution bar and the solid distribution plate with an insulating layer so that the current does not The deposition cassette is maintained by the material deposited onto the deposition cassette, even when a conductive material is deposited on the deposition cassette. The deposition cassette of claim 3, wherein the insulating layer extends outwardly by a distance beyond the outer edge of the distribution bar and the solid distribution plate to form an outer edge of the deposition cassette during deposition The other parts of the deposition cassette are cooler, so that the outer shell of the deposited material is not developed thereon. The deposition cassette of claim 1, wherein the desired amount of current is distributed in the desired cross-sectional area of the deposition cassette by combining the functional properties of the distribution bar and the solid distribution plate to a suitable material and size. The embossed waveform deposition plate allows current to flow evenly through the path created by machining the alternate slits in the deposition plate, but where the total surface area provided by these routes is large. The deposition cassette of claim 5, wherein the outermost reticular waveform path is wider than the internal retrace waveform path to form an outer edge of the deposition cassette during deposition than other portions of the deposition cassette It is colder, so the outer shell of the deposited material will not develop on it. A deposition cassette as described in claim 5, wherein during the deposition, the re-energized external wrap waveform path can be turned off to form a colder edge than the other portions of the deposition cassette during deposition. Therefore, the outer casing of the deposited material is not developed thereon, but can be opened during the separation of the outer casing from the self-depositing plate to provide heating to effectively disassemble the edges of the outer casing deposited on both sides of the deposition cassette. The deposition cassette of any one of claims 5-7, wherein the current of the desired amount is distributed over all of the desired cross-sectional areas of the deposition cassette by covering the deposition cassette with an insulating layer so that the current is not Will pass from the deposition cassette to the material deposited on the deposition cassette, and wherein the insulation prevents material from depositing in the undulating wave slit, which may prevent subsequent shell separation from being maintained, even when deposited on a deposition cassette The same applies to conductive materials. The deposition cassette of claim 8, wherein the insulation layer Extending outwardly some distance, beyond the distribution bar and the outer edge of the solid distribution plate to form the outer edge of the deposition cassette during deposition is cooler than the other parts of the deposition cassette, so that no deposition material is developed thereon. shell. The deposition cassette of claim 1, wherein the desired amount of current is distributed throughout the deposition cassette, and the desired cross-sectional area is U-shaped deposition plate having an insulating spacer filled with a U-shaped area. Causing current through the U-shaped deposition plate, heating the U-shaped plate to form a material outer shell on the U-shaped plate, while the insulating spacer blocks the outer edge of the U-shaped deposition plate to form an outer casing, which may hinder The self-deposited cassette separates the outer casing. The deposition cassette of any one of claims 1 to 7, wherein the material is made of a suitable insulating, non-contaminating, and heat-resistant material, including but not limited to tantalum carbide, tantalum nitride, and various ceramics. A shield that blocks deposition gases from contacting those edges to prevent formation of an outer shell on one or more edges of the deposition cassette. The deposition cassette of claim 2, 5, or 6, wherein the distribution bar, the solid deposition plate, and the corrugated wave deposition plate are comprised of, but not limited to, tungsten, tantalum nitride, tantalum carbide, graphite. Made of alloys, composites, and mixtures thereof. The deposition cassette of claim 3, wherein the insulating layer or the insulating spacer is made of a material having suitable electrical, thermal, and structural properties, including but not limited to tantalum tungsten carbide and tantalum nitride. It is made and can be applied in many forms including, but not limited to, chemical vapor deposition, pre-ceramic polymer ointments, and ceramic matrix composites. A method and a deposition cassette for increasing the deposition reactor productivity and/or reducing energy consumption of a generally used seed bar pair or a basic deposition plate per unit of production, comprising the steps of: a. using its total average effective deposition surface area ratio seed The total average effective deposition surface area of the bar pair or basic deposition plate is increased to the extent required to achieve increased productivity per production unit and/or to reduce energy consumption (physical limitations in the reactor, such as internal volume and maximum deposition gas flow rate) The deposition cassette in the deposition reactor replaces the seed bar pair or the basic deposition plate in the deposition reactor, b. operates a standard deposition cycle of the deposition reactor, with the exception that the average deposition gas flow rate is comparable to when a seed bar or basic solid deposition is used. The plate time is higher and the cycle time can be shorter. c. The deposition cassette with the deposited material shell is removed from the deposition reactor and then taken to a separate recycling station, d. The deposition cassette is heated to or above the deposition material. The melting point causes the thin layer of material on the interface of the deposition cassette to liquefy and the outer shell to be removed from the deposition cassette, e. by applying suitable forces such as gravity or mechanical Cassette was isolated by deposition from the outside disassembly, f. The deposited Siemens reactor back to the cassette repeat the above steps b through e.