TWI471700B - A positive resist composition, a photoresist pattern formation method, and a polymer compound - Google Patents

A positive resist composition, a photoresist pattern formation method, and a polymer compound Download PDF

Info

Publication number
TWI471700B
TWI471700B TW98146290A TW98146290A TWI471700B TW I471700 B TWI471700 B TW I471700B TW 98146290 A TW98146290 A TW 98146290A TW 98146290 A TW98146290 A TW 98146290A TW I471700 B TWI471700 B TW I471700B
Authority
TW
Taiwan
Prior art keywords
group
alkyl group
carbon atoms
atom
structural unit
Prior art date
Application number
TW98146290A
Other languages
Chinese (zh)
Other versions
TW201039064A (en
Inventor
Tomoyuki Hirano
Takahiro Dazai
Tasuku Matsumiya
Daiju Shiono
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW201039064A publication Critical patent/TW201039064A/en
Application granted granted Critical
Publication of TWI471700B publication Critical patent/TWI471700B/en

Links

Description

正型光阻組成物,光阻圖型之形成方法,高分子化合物Positive photoresist composition, formation method of photoresist pattern, polymer compound

本發明為有關,可被利用作為正型光阻組成物之基材成份之新穎之高分子化合物、含有該高分子化合物之正型光阻組成物,及使用該正型光阻組成物之光阻圖型之形成方法。The present invention relates to a novel polymer compound which can be utilized as a substrate component of a positive-type photoresist composition, a positive-type photoresist composition containing the polymer compound, and light using the positive-type photoresist composition The formation method of the resistance pattern.

微影蝕刻技術中,例如於基板上形成由光阻材料所得之光阻膜,並對於前述光阻膜,介由形成特定圖型之遮罩,以光、電子線等放射線進行選擇性曝光,經施以顯影處理,使前述光阻膜形成具有特定形狀之光阻圖型之方式進行。In the lithography technique, for example, a photoresist film obtained from a photoresist material is formed on a substrate, and the photoresist film is selectively exposed to radiation such as light or electron lines by forming a mask of a specific pattern. The development process is carried out to form the photoresist film into a photoresist pattern having a specific shape.

經曝光之部份變化為具有溶解於顯影液之特性的光阻材料稱為正型,經曝光之部份變化為具有不溶解於顯影液之特性的光阻材料稱為負型。The portion of the exposure which is changed to have a property of dissolving in the developer is referred to as a positive type, and the portion of the photoresist which is changed to have a property of not being dissolved in the developer is referred to as a negative type.

近年來,於半導體元件或液晶顯示元件之製造中,伴隨微影蝕刻技術之進步而急速的推向圖型之微細化。In recent years, in the manufacture of semiconductor elements or liquid crystal display elements, the micro-image etching technology has been rapidly advanced to refine the pattern.

微細化之方法,一般而言,為將曝光光源予以短波長化之方式進行。具體而言為,以往為使用g線、i線為代表之紫外線。但現在則開始使用KrF準分子雷射,或ArF準分子雷射以進行半導體元件之量產。又,對於較前述準分子雷射更短波長之F2 準分子雷射、電子線、EUV(極紫外線)或X線等亦已開始進行研究。The method of miniaturization is generally performed in such a manner as to shorten the wavelength of the exposure light source. Specifically, ultraviolet rays represented by g lines and i lines are conventionally used. But now it is starting to use KrF excimer lasers, or ArF excimer lasers for mass production of semiconductor components. Further, research has been started on F 2 excimer lasers, electron beams, EUV (extreme ultraviolet rays) or X-rays having shorter wavelengths than the aforementioned excimer lasers.

光阻材料,則尋求對於該些曝光光源具有感度,具有可重現微細尺寸圖型之解析性等微影蝕刻特性。The photoresist material is sought to have sensitivity to the exposure light sources, and has lithographic etching characteristics such as resolving the resolution of the fine size pattern.

可滿足前述要求之光阻材料,一般常用含有基於酸之作用使對鹼顯影液的溶解性產生變化之基材成份,與經由曝光產生酸之酸產生劑之化學增幅型光阻組成物。A photoresist material which satisfies the above requirements is generally a chemically amplified photoresist composition containing a substrate component which changes the solubility of an alkali developer based on an acid action and an acid generator which generates an acid by exposure.

例如正型之化學增幅型光阻組成物,一般為使用含有經由酸之作用而增大對鹼顯影液之溶解性的樹脂成份(基礎樹脂),與酸產生劑成份之光阻。使用該光阻組成物所形成之光阻膜,於光阻圖型之形成時進行選擇性曝光時,於曝光部中,經由酸產生劑所產生之酸,並經由該酸之作用而增大樹脂成份對鹼顯影液之溶解性,使曝光部對鹼顯影液為可溶性。For example, a positive-type chemically amplified resist composition generally uses a resin component (base resin) containing an acid generator to increase the solubility to an alkali developer, and a photoresist having an acid generator component. When the photoresist film formed by the photoresist composition is selectively exposed during the formation of the photoresist pattern, the acid generated by the acid generator in the exposed portion is increased by the action of the acid. The solubility of the resin component in the alkali developer makes the exposed portion soluble in the alkali developer.

目前,ArF準分子雷射微影蝕刻等中所使用的光阻之基礎樹脂,就於193nm附近具有優良透明性等觀點,一般為使用主鏈具有(甲基)丙烯酸酯所衍生之結構單位的樹脂(丙烯酸系樹脂)等(例如專利文獻1~2)。於此,「(甲基)丙烯酸」係指,α位鍵結氫原子之丙烯酸,與α位鍵結甲基之甲基丙烯酸之一者或二者之意。「(甲基)丙烯酸酯(acrylic acid ester)」係指,α位鍵結氫原子之丙烯酸酯,與α位鍵結甲基之甲基丙烯酸酯之一者或二者之意。「(甲基)丙烯酸酯(acrylate)」係指,α位鍵結氫原子之丙烯酸酯,與α位鍵結甲基之甲基丙烯酸酯之一者或二者之意。At present, the base resin of the photoresist used in ArF excimer laser lithography etching and the like has excellent transparency in the vicinity of 193 nm, and generally uses a structural unit derived from a (meth) acrylate in a main chain. Resin (acrylic resin) or the like (for example, Patent Documents 1 and 2). Here, "(meth)acrylic acid" means one or both of acrylic acid having a hydrogen atom bonded to the α-position and methacrylic acid having a methyl group bonded to the α-position. "(acrylic acid ester)" means an acrylate having a hydrogen atom bonded to the α-position and one or both of a methyl methacrylate bonded to the α-position. "(Meth)acrylate" means an acrylate having a hydrogen atom bonded to the α-position, and one or both of a methyl methacrylate bonded to the α-position.

又,目前,化學增幅型光阻用之基礎樹脂,為提高微影蝕刻特性等目的,而有使用含有多數結構單位之樹脂。例如正型之情形,通常,含有具有經由酸產生劑所產生之酸的作用而解離之酸解離性溶解抑制基之結構單位,此外,亦使用含有具有羥基等之極性基的結構單位、具有內酯結構之結構單位等之樹脂。該些樹脂中,具有內酯結構之結構單位,一般而言,可提高光阻膜對基板之密著性,提高與鹼顯影液之親和性等,而期待可提高微影蝕刻特性。Further, at present, a base resin for a chemically amplified photoresist has a resin containing a plurality of structural units for the purpose of improving the lithographic etching property and the like. In the case of a positive type, for example, a structural unit containing an acid dissociable dissolution inhibiting group which is dissociated by an action of an acid generated by an acid generator is used, and a structural unit having a polar group having a hydroxyl group or the like is also used. A resin such as a structural unit of an ester structure. Among these resins, a structural unit having a lactone structure generally improves the adhesion of the photoresist film to the substrate, improves the affinity with the alkali developing solution, and the like, and expects to improve the lithographic etching characteristics.

[先前技術文獻][Previous Technical Literature]

[特許文献1]特開2003-241385號公報[Patent Document 1] JP-A-2003-241385

[特許文献2]特開2006-016379號公報[Patent Document 2] JP-A-2006-016379

今後,推測微影蝕刻技術將會更進步,應用領域會更為擴大等,故對於微影蝕刻用途所使用之新穎之材料具有種種要求。例如伴隨圖型之微細化,光阻材料亦要求解析性等各種微影蝕刻特性應更為提升等。In the future, it is speculated that the micro-etching technology will be more advanced, and the application field will be more expanded. Therefore, there are various requirements for the novel materials used in the lithography etching application. For example, with the miniaturization of the pattern, the photoresist material also requires various lithographic etching characteristics such as resolution to be improved.

該些微影蝕刻特性之一例如遮罩缺陷因子-(MEF)。MEF係指,於相同曝光量下,固定間距之狀態下,變化遮罩尺寸之際,不同尺寸之光阻圖型可何種程度忠實地重現(遮罩重現性)之參數。以往之光阻組成物中,於光阻圖型形成之際,常因所使用之遮罩尺寸(通孔圖型中為通孔直徑,或線路與空間圖型中為線路寬)之變化而造成曝光部之受光量的増減結果,使所形成之光阻圖型之尺寸偏離遮罩尺寸,或狭間距下形成微細圖型之際,造成形狀崩壞之疑慮。例如形成約100nm以下之通孔口徑的通孔圖型之際,通孔之正圓性會有降低之疑慮。One of the lithographic etching characteristics is, for example, a mask defect factor-(MEF). MEF refers to the degree to which the different size resist patterns can faithfully reproduce (mask reproducibility) when the mask size is changed under the same exposure amount and at a fixed pitch. In the conventional photoresist composition, when the photoresist pattern is formed, it is often changed by the size of the mask used (the diameter of the through hole in the through hole pattern or the line width in the line and space pattern). As a result of the reduction in the amount of light received by the exposure portion, the size of the formed photoresist pattern is deviated from the size of the mask, or when a fine pattern is formed at a narrow pitch, the shape collapses. For example, when a via pattern having a via diameter of about 100 nm or less is formed, the roundness of the via hole may be lowered.

本發明,為鑑於上述情事所提出者,以提供適合作為正型光阻組成物之基材成份的有用新穎之高分子化合物、適合作為該高分子化合物之單體的化合物、含有前述高分子化合物之正型光阻組成物,及使用該正型光阻組成物之光阻圖型之形成方法為目的。In view of the above, the present invention provides a useful novel polymer compound suitable as a substrate component of a positive photoresist composition, a compound suitable as a monomer of the polymer compound, and a polymer compound as described above. The positive resistive composition and the method of forming the photoresist pattern using the positive resist composition are for the purpose.

為達上述之目的,本發明為採用以下之構成。In order to achieve the above object, the present invention adopts the following constitution.

即,本發明之第一之態樣為,一種正型光阻組成物,其為含有經由酸之作用而增大對鹼顯影液之溶解性的基材成份(A),及經由曝光而發生酸之酸產生劑成份(B),其特徵為,前述基材成份(A)為,含有具有下述通式(a0-1)所表示之結構單位(a0-1),及下述通式(a0-2)所表示之結構單位(a0-2)之高分子化合物(A1),That is, the first aspect of the present invention is a positive-type photoresist composition which comprises a substrate component (A) which increases the solubility to an alkali developer via an action of an acid, and which occurs via exposure. The acid generator component (B) is characterized in that the substrate component (A) contains a structural unit (a0-1) represented by the following formula (a0-1), and the following formula a polymer compound (A1) of the structural unit (a0-2) represented by (a0-2),

[式中,R1 為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R2 為2價之鍵結基,R3 ,為其環骨架中含有-SO2 -之環式基,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R21 為分支鏈狀之烷基;R22 ,為可與該R22 鍵結之碳原子共同形成脂肪族單環式基之基]。In the formula, R 1 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms, R 2 is a divalent bond group, and R 3 is a ring skeleton containing -SO a cyclic group of 2 -, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; R 21 is a branched alkyl group; and R 22 is a bondable with R 22 The bonded carbon atoms together form the base of the aliphatic monocyclic group].

本發明之第二之態樣為,一種光阻圖型之形成方法,其特徵為,包含於支撐體上,使用前述第一之態樣之正型光阻組成物形成光阻膜之步驟、使前述光阻膜曝光之步驟,及使前述光阻膜鹼顯影以形成光阻圖型之步驟。A second aspect of the present invention is a method for forming a photoresist pattern, comprising the steps of forming a photoresist film on a support and using the positive photoresist composition of the first aspect; a step of exposing the photoresist film and a step of causing the photoresist film to be alkali developed to form a photoresist pattern.

本發明之第三之態樣,一種高分子化合物,其特徵為,具有下述通式(a0-1)所表示之結構單位(a0-1),及下述通式(a0-2)所表示之結構單位(a0-2),According to a third aspect of the present invention, a polymer compound characterized by having the structural unit (a0-1) represented by the following formula (a0-1) and the following formula (a0-2) The structural unit represented (a0-2),

[式中,R1 為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R2 為2價之鍵結基,R3 ,為其環骨架中含有-SO2 -之環式基,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R21 為分支鏈狀之烷基;R22 ,為可與該R22 鍵結之碳原子共同形成脂肪族單環式基之基]。In the formula, R 1 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms, R 2 is a divalent bond group, and R 3 is a ring skeleton containing -SO a cyclic group of 2 -, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; R 21 is a branched alkyl group; and R 22 is a bondable with R 22 The bonded carbon atoms together form the base of the aliphatic monocyclic group].

本說明書與本申請專利範圍中,「脂肪族」為,相對於芳香族之相對性概念,係定義為不具有芳香族性之基、化合物等之意。In the present specification and the scope of the present patent application, "aliphatic" is a concept of relativity with respect to aromatics, and is defined as a group or a compound having no aromaticity.

「烷基」,於無特別限定下,為包含直鏈狀、分支鏈狀及環狀之1價之飽和烴基。The "alkyl group" is a monovalent saturated hydrocarbon group containing a linear chain, a branched chain, and a ring, unless otherwise specified.

「伸烷基」,於無特別限定下,為包含直鏈狀、分支鏈狀及環狀之2價之飽和烴基。烷氧基中之烷基亦為相同之內容。The "alkylene group" is a divalent saturated hydrocarbon group containing a linear chain, a branched chain, and a ring, unless otherwise specified. The alkyl group in the alkoxy group is also the same.

「鹵化烷基」為,烷基之氫原子的一部份或全部被鹵素原子所取代之基、該鹵素原子,例如,氟原子、氯原子、溴原子、碘原子等。The "halogenated alkyl group" is a group in which a part or all of a hydrogen atom of an alkyl group is substituted by a halogen atom, and the halogen atom is, for example, a fluorine atom, a chlorine atom, a bromine atom or an iodine atom.

「氟化烷基」或「氟化伸烷基」為,烷基或伸烷基之氫原子的一部份或全部被氟原子所取代之基之意。The "fluorinated alkyl group" or "fluorinated alkyl group" means a group in which a part or all of a hydrogen atom of an alkyl group or an alkyl group is substituted by a fluorine atom.

「結構單位」係指,構成高分子化合物(樹脂、聚合物、共聚物)之單體單位(monomer unit)之意。The "structural unit" means a monomer unit constituting a polymer compound (resin, polymer, copolymer).

「丙烯酸酯所衍生之結構單位」係指,丙烯酸酯之乙烯性雙鍵開裂所構成之結構單位之意。The "structural unit derived from acrylate" means the structural unit composed of the cleavage of the ethylenic double bond of the acrylate.

「丙烯酸酯」,除α位之碳原子上鍵結氫原子的丙烯酸酯以外,尚包含α位之碳原子鍵結有取代基(氫原子以外之原子或基)之概念。該α位之碳原子鍵結之取代基,例如碳數1~5之烷基、碳數1~5之鹵化烷基、羥烷基等。又,丙烯酸酯之α位之碳原子,於無特別限定下,係指羰基所鍵結之碳原子之意。The "acrylate" has a concept in which a carbon atom bonded to a hydrogen atom at the alpha atom is bonded to a carbon atom in the alpha position (atom or a group other than a hydrogen atom). The substituent bonded to the carbon atom at the α-position is, for example, an alkyl group having 1 to 5 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, or a hydroxyalkyl group. Further, the carbon atom at the α position of the acrylate means, unless otherwise specified, the meaning of the carbon atom to which the carbonyl group is bonded.

「曝光」,為包含輻射線照射之全部概念。"Exposure" is the concept of including radiation exposure.

本發明,為提供一種可被利用作為正型光阻組成物之基材成份之新穎之高分子化合物、含有該高分子化合物之正型光阻組成物,及使用該正型光阻組成物之光阻圖型之形成方法。The present invention provides a novel polymer compound which can be utilized as a substrate component of a positive photoresist composition, a positive photoresist composition containing the polymer compound, and a positive photoresist composition using the same The formation method of the photoresist pattern.

<正型光阻組成物><Positive photoresist composition> filial

本發明之正型光阻組成物(以下,亦有僅稱光阻組成物之情形)為,含有經由酸之作用而增大對鹼顯影液之溶解性的基材成份(A)(以下,亦稱為(A)成份),及經由輻射線之照射而發生酸之酸產生劑成份(B)(以下,亦稱為(B)成份)。The positive-type resist composition of the present invention (hereinafter also referred to as a photo-resist composition) is a substrate component (A) containing an increase in solubility in an alkali developer via an action of an acid (hereinafter, Also known as (A) component, and an acid generator component (B) (hereinafter, also referred to as component (B)) which generates an acid via irradiation with radiation.

該正型光阻組成物中,經受到輻射線照射(曝光)時,會由(B)成份產生酸,經由該酸之作用而增大(A)成份對鹼顯影液之溶解性。因此,於光阻圖型之形成中,對使用該該正型光阻組成物所得之光阻膜進行選擇性曝光時,於使該光阻膜之曝光部增大對鹼顯影液之可溶性的同時,未曝光部對鹼顯影液之溶解性未有變化之情形下,進行鹼顯影之方式,而可形成光阻圖型。In the positive resist composition, when irradiated with radiation (exposure), an acid is generated from the component (B), and the solubility of the component (A) to the alkali developer is increased by the action of the acid. Therefore, in the formation of the photoresist pattern, when the photoresist film obtained by using the positive photoresist composition is selectively exposed, the exposed portion of the photoresist film is increased in solubility to the alkali developer. At the same time, in the case where the unexposed portion does not change in the solubility of the alkali developing solution, an alkali development method can be employed to form a photoresist pattern.

於此,「基材成份」係指,具有形成膜之能力的有機化合物。基材成份,較佳為使用分子量500以上之有機化合物。該有機化合物之分子量為500以上時,可提高膜形成能力,又,容易形成奈米程度之光阻圖型。Here, the "substrate component" means an organic compound having the ability to form a film. The substrate component is preferably an organic compound having a molecular weight of 500 or more. When the molecular weight of the organic compound is 500 or more, the film forming ability can be improved, and a photoresist pattern of a nanometer degree can be easily formed.

作為前述基材成份使用之「分子量為500以上之有機化合物」,可大致區分為非聚合物與聚合物。The "organic compound having a molecular weight of 500 or more" used as the substrate component can be roughly classified into a non-polymer and a polymer.

非聚合物,通常為使用分子量500以上、未達4000之物。以下,分子量為500以上、未達4000之非聚合物稱為低分子化合物。The non-polymer is usually a substance having a molecular weight of 500 or more and less than 4,000. Hereinafter, a non-polymer having a molecular weight of 500 or more and less than 4,000 is referred to as a low molecular compound.

聚合物,通常為使用分子量2000以上之物。以下,分子量2000以上之聚合物稱為高分子化合物。高分子化合物之情形,「分子量」為使用GPC(凝膠滲透色層分析法)所得之聚苯乙烯換算之質量平均分子量。以下,高分子化合物亦有僅稱「樹脂」之情形。The polymer is usually a substance having a molecular weight of 2,000 or more. Hereinafter, a polymer having a molecular weight of 2,000 or more is referred to as a polymer compound. In the case of a polymer compound, "molecular weight" is a polystyrene-converted mass average molecular weight obtained by GPC (gel permeation chromatography). Hereinafter, the polymer compound may also be referred to as "resin".

<(A)成份>[高分子化合物(A1)]<(A) component> [polymer compound (A1)]

高分子化合物(A1)(以下,亦稱為(A1)成份)為,含有前述通式(a0-1)所表示之結構單位(a0-1),及前述通式(a0-2)所表示之結構單位(a0-2)。The polymer compound (A1) (hereinafter also referred to as (A1) component) contains the structural unit (a0-1) represented by the above formula (a0-1) and represented by the above formula (a0-2) The structural unit (a0-2).

(A1)成份,除結構單位(a0-1),及(a0-2)以外,以再具有與前述各結構單位相異之結構單位,且含有酸解離性溶解抑制基之丙烯酸酯所衍生之結構單位(a1)為佳。The component (A1), other than the structural unit (a0-1), and (a0-2), is derived from an acrylate having a structural unit different from each of the above structural units and containing an acid dissociable dissolution inhibiting group. The structural unit (a1) is preferred.

(A1)成份,除結構單位(a0-1),及(a0-2)以外,或結構單位(a0-1)、(a0-2),及(a1)以外,以再具有含有含內酯之環式基之丙烯酸酯所衍生之結構單位(a2)為佳。(A1) component, in addition to structural units (a0-1), and (a0-2), or structural units (a0-1), (a0-2), and (a1), further containing a lactone-containing The structural unit (a2) derived from the cyclic acrylate is preferred.

又,(A1)成份,除結構單位(a0-1),及(a0-2)以外,或結構單位(a0-1)、(a0-2),及(a1)以外,或結構單位(a0-1)、(a0-2),及(a2)以外,或結構單位(a0-1)、(a0-2)、(a1)及(a2)以外,以再具有含有含極性基之脂肪族烴基之丙烯酸酯所衍生之結構單位(a3)為佳。Further, the component (A1), other than the structural unit (a0-1), and (a0-2), or the structural unit (a0-1), (a0-2), and (a1), or the structural unit (a0) In addition to -1), (a0-2), and (a2), or structural units (a0-1), (a0-2), (a1), and (a2), further having an aliphatic group containing a polar group The structural unit (a3) derived from the hydrocarbyl acrylate is preferred.

(結構單位(a0-1))(Structural unit (a0-1))

結構單位(a0-1),為上述通式(a0-1)所表示之結構單位。The structural unit (a0-1) is a structural unit represented by the above formula (a0-1).

式(a0-1)中,R1 為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基。In the formula (a0-1), R 1 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms.

R1 之烷基,以碳數1~5之直鏈狀或分支鏈狀之烷基為佳,具體而言,例如,甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等。The alkyl group of R 1 is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, specifically, for example, a methyl group, an ethyl group, a propyl group, an isopropyl group or an n-butyl group. Isobutyl, tert-butyl, pentyl, isopentyl, neopentyl, and the like.

R1 之碳數1~5之鹵化烷基,例如前述碳數1~5之烷基之氫原子的一部份或全部被鹵素原子所取代之基。該鹵素原子,例如,氟原子、氯原子、溴原子、碘原子等,特別是以氟原子為佳。The halogenated alkyl group having 1 to 5 carbon atoms of R 1 , for example, a part or all of a hydrogen atom of the alkyl group having 1 to 5 carbon atoms is substituted by a halogen atom. The halogen atom is, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or the like, and particularly preferably a fluorine atom.

R1 ,以氫原子、碳數1~5之烷基或碳數1~5之氟化烷基為佳,就工業上取得之容易度而言,以氫原子或甲基為最佳。R 1 is preferably a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a fluorinated alkyl group having 1 to 5 carbon atoms, and is preferably a hydrogen atom or a methyl group in terms of ease of industrial availability.

式(a0-1)中,R2 為2價之鍵結基。In the formula (a0-1), R 2 is a divalent bond group.

R2 ,例如可具有取代基之2價之烴基、含有雜原子之2價之鍵結基等為較佳。R 2 is preferably a divalent hydrocarbon group which may have a substituent, a divalent bond group containing a hetero atom, or the like.

該烴基之「具有取代基」係指,該烴基中氫原子之一部份或全部被氫原子以外之基或原子所取代之意。The "having a substituent" of the hydrocarbon group means that a part or all of a hydrogen atom in the hydrocarbon group is substituted by a group or an atom other than a hydrogen atom.

該烴基可為脂肪族烴基亦可、芳香族烴基亦可。脂肪族烴基為不具有芳香族性之烴基之意。The hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. The aliphatic hydrocarbon group is intended to be a hydrocarbon group having no aromaticity.

該脂肪族烴基,可為飽和者亦可、不飽和者亦可,通常以飽和者為佳。The aliphatic hydrocarbon group may be either saturated or unsaturated, and is usually saturated.

前述脂肪族烴基,更具體而言,例如直鏈狀或分支鏈狀之脂肪族烴基、構造中含有環之脂肪族烴基等。More specifically, the aliphatic hydrocarbon group is, for example, a linear or branched aliphatic hydrocarbon group or a hydrocarbon group having a ring in the structure.

直鏈狀或分支鏈狀之脂肪族烴基,以碳數為1~10為佳,以1~8為較佳,以1~5為更佳,以1~2為最佳。The linear or branched aliphatic hydrocarbon group preferably has a carbon number of from 1 to 10, preferably from 1 to 8, more preferably from 1 to 5, most preferably from 1 to 2.

直鏈狀之脂肪族烴基,以直鏈狀之伸烷基為佳,具體而言,例如,伸甲基[-CH2 -]、伸乙基[-(CH2 )2 -]、伸三甲基[-(CH2 )3 -]、伸四甲基[-(CH2 )4 -]、伸五甲基[-(CH2 )5 -]等。a linear aliphatic hydrocarbon group, preferably a linear alkyl group, specifically, for example, methyl [-CH 2 -], ethyl (-(CH 2 ) 2 -), or The group [-(CH 2 ) 3 -], tetramethyl [-(CH 2 ) 4 -], pentamethyl [-(CH 2 ) 5 -], and the like.

分支鏈狀之脂肪族烴基,以分支鏈狀之伸烷基為佳,具體而言,例如,-CH(CH3 )-、-CH(CH2 CH3 )-、-C(CH3 )2 -、-C(CH3 )(CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH3 )-、-C(CH2 CH3 )2 -等之烷基伸甲基;-CH(CH3 )CH2 -、-CH(CH3 )CH(CH3 )-、-C(CH3 )2 CH2 -、-CH(CH2 CH3 )CH2 -、-C(CH2 CH3 )2 -CH2 -等之烷基伸乙基;-CH(CH3 )CH2 CH2 -、-CH2 CH(CH3 )CH2 -等之烷基伸三甲基;-CH(CH3 )CH2 CH2 CH2 -、-CH2 CH(CH3 )CH2 CH2 -等之烷基伸四甲基等之烷基伸烷基等。烷基伸烷基中之烷基,以碳數1~5之直鏈狀之烷基為佳。The branched aliphatic hydrocarbon group is preferably a branched alkyl group, specifically, for example, -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C(CH 3 ) 2 -, -C(CH 3 )(CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 3 )-, -C(CH 2 CH 3 ) 2 - or the like alkyl-methyl group; CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, -CH(CH 2 CH 3 )CH 2 -, -C(CH 2 CH 3) 2 -CH 2 -, etc. extending ethyl group; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 - , etc. extending trimethyl alkyl; -CH (CH 3 ) An alkyl group such as CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 CH 2 - or the like is extended to an alkyl group such as a tetramethyl group. The alkyl group in the alkylalkyl group is preferably a linear alkyl group having 1 to 5 carbon atoms.

鏈狀之脂肪族烴基,可具有取代基亦可,不具有取代基亦可。該取代基,例如氟原子、氟原子所取代之碳數1~5之氟化烷基、氧原子(=O)等。The chain aliphatic hydrocarbon group may have a substituent or may have no substituent. The substituent is, for example, a fluorine atom or a fluorinated alkyl group having 1 to 5 carbon atoms substituted by a fluorine atom, an oxygen atom (=O) or the like.

構造中含有環之脂肪族烴基,例如環狀之脂肪族烴基(脂肪族烴環去除2個氫原子所得之基)、該環狀之脂肪族烴基鍵結於前述鏈狀之脂肪族烴基的末端或介於鏈狀之脂肪族烴基之途中之基等。The structure contains a ring-shaped aliphatic hydrocarbon group, for example, a cyclic aliphatic hydrocarbon group (a group obtained by removing two hydrogen atoms from an aliphatic hydrocarbon ring), and the cyclic aliphatic hydrocarbon group is bonded to the terminal of the aforementioned chain aliphatic hydrocarbon group. Or a group in the middle of a chain aliphatic hydrocarbon group.

環狀之脂肪族烴基,以碳數為3~20為佳,以3~12為更佳。The cyclic aliphatic hydrocarbon group preferably has a carbon number of from 3 to 20, more preferably from 3 to 12.

環狀之脂肪族烴基,可為多環式基亦可,單環式基亦可。單環式基,例如碳數3~6之單環鏈烷去除2個氫原子之基為佳,該單環鏈烷例如環戊烷、環己烷等。多環式基,例如碳數7~12之多環鏈烷去除2個氫原子之基為佳,該多環鏈烷之具體例示,如金剛烷、原菠烷、異菠烷、三環癸烷、四環十二烷等。The cyclic aliphatic hydrocarbon group may be a polycyclic group or a monocyclic group. The monocyclic group, for example, a monocyclic alkane having 3 to 6 carbon atoms is preferably a group in which two hydrogen atoms are removed, and the monocyclic alkane is, for example, cyclopentane or cyclohexane. A polycyclic group, for example, a polycycloalkane having 7 to 12 carbon atoms is preferred, and a base of 2 hydrogen atoms is preferably removed, and specific examples of the polycyclic alkane, such as adamantane, raw spinel, isopentane, and tricyclic guanidine Alkane, tetracyclododecane, and the like.

環狀之脂肪族烴基,可具有取代基亦可,不具有取代基亦可。取代基,例如碳數1~5之烷基、氟原子、氟原子所取代之碳數1~5之氟化烷基、氧原子(=O)等。The cyclic aliphatic hydrocarbon group may have a substituent or may have no substituent. The substituent is, for example, an alkyl group having 1 to 5 carbon atoms, a fluorine atom, a fluorinated alkyl group having 1 to 5 carbon atoms substituted by a fluorine atom, an oxygen atom (=O) or the like.

「含有雜原子之2價之鍵結基」中之雜原子係指,碳原子及氫原子以外原子,例如氧原子、氮原子、硫原子、鹵素原子等。The hetero atom in the "two-valent bond group containing a hetero atom" means an atom other than a carbon atom and a hydrogen atom, for example, an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom.

含有雜原子之2價之鍵結基,具體而言,例如,-O-、-C(=O)-、-C(=O)-O-、碳酸酯鍵結(-O-C(=O)-O-)、-NH-、-NR04 (R04 為烷基)-、-NH-C(=O)-、=N-等。又,該些「含有雜原子之2價之鍵結基」與2價之烴基之組合等。2價之烴基例如與上述可具有取代基之烴基為相同之內容,又以直鏈狀或分支鏈狀之脂肪族烴基為佳。a divalent bond group containing a hetero atom, specifically, for example, -O-, -C(=O)-, -C(=O)-O-, carbonate bond (-OC(=O) -O-), -NH-, -NR 04 (R 04 is an alkyl group)-, -NH-C(=O)-, =N-, and the like. Further, the combination of "a divalent bond group containing a hetero atom" and a divalent hydrocarbon group. The divalent hydrocarbon group is, for example, the same as the above-mentioned hydrocarbon group which may have a substituent, and is preferably a linear or branched aliphatic hydrocarbon group.

R2 ,其結構中具有酸解離性部位亦可,不具有酸解離性部位亦可。「酸解離性部位」係指,該有機基內,經由曝光所發生之酸的作用而解離之部位之意。R2 具有酸解離性部位之情形,較佳以具有具三級碳原子之酸解離性部位為佳。R 2 may have an acid dissociable site in its structure, and may have no acid dissociable site. The "acid dissociable portion" means a portion in the organic group which is dissociated by the action of an acid generated by exposure. In the case where R 2 has an acid dissociable moiety, it is preferred to have an acid dissociable moiety having a tertiary carbon atom.

本發明中,R2 之2價之鍵結基,例如以伸烷基、2價之脂肪族環式基或含有雜原子之2價之鍵結基為佳。其中又以伸烷基為特佳。In the present invention, the divalent bond group of R 2 is preferably, for example, an alkylene group, a divalent aliphatic ring group or a divalent bond group containing a hetero atom. Among them, alkylene is particularly preferred.

R2 為伸烷基之情形,該伸烷基以碳數1~10為佳,以碳數1~6為更佳,以碳數1~4為特佳,以碳數1~3為最佳。具體而言,例如與前述所列舉之直鏈狀之伸烷基、分支鏈狀之伸烷基為相同之內容。When R 2 is an alkylene group, the alkylene group is preferably a carbon number of 1 to 10, more preferably a carbon number of 1 to 6, a carbon number of 1 to 4, and a carbon number of 1 to 3. good. Specifically, for example, it is the same as the above-mentioned linear alkyl group and branched chain alkyl group.

R2 為2價之脂肪族環式基之情形,該脂肪族環式基例如與前述「構造中含有環之脂肪族烴基」所列舉之環狀之脂肪族烴基為相同之內容。When R 2 is a divalent aliphatic cyclic group, the aliphatic cyclic group is the same as the cyclic aliphatic hydrocarbon group exemplified in the above-mentioned "aliphatic hydrocarbon group having a ring in the structure".

該脂肪族環式基,以由環戊烷、環己烷、原菠烷、異菠烷、金剛烷、三環癸烷、四環十二烷去除2個以上氫原子所得之基為特佳。The aliphatic cyclic group is particularly preferably obtained by removing two or more hydrogen atoms from cyclopentane, cyclohexane, raw spinane, isopentane, adamantane, tricyclodecane or tetracyclododecane. .

R2 為含有雜原子之2價之鍵結基之情形,該鍵結基中較佳者例如,-O-、-C(=O)-O-、-C(=O)-、-O-C(=O)-O-、-C(=O)-NH-、-NH-(H可被烷基、醯基等取代基所取代)、-S-、-S(=O)2 -、-S(=O)2 -O-、式-A-O-B-所表示之基、式-[A-C(=O)-O]m -B-所表示之基等。於此,A及B為各自獨立之可具有取代基之2價之烴基,m為0~3之整數。R 2 is a case of a divalent bond group containing a hetero atom, and preferred of the bond group is, for example, -O-, -C(=O)-O-, -C(=O)-, -OC (=O)-O-, -C(=O)-NH-, -NH- (H can be substituted by a substituent such as an alkyl group or a fluorenyl group), -S-, -S(=O) 2 -, -S(=O) 2 -O-, a group represented by the formula -AOB-, a group represented by the formula -[AC(=O)-O] m -B-, and the like. Here, A and B are each a divalent hydrocarbon group which may have a substituent, and m is an integer of 0-3.

R2 為-NH-之情形,其H可被烷基、醯基等取代基所取代。該取代基(烷基、醯基等)以碳數為1~10為佳,以1~8為較佳,以1~5為特佳。In the case where R 2 is -NH-, H may be substituted with a substituent such as an alkyl group or a thiol group. The substituent (alkyl group, mercapto group or the like) is preferably a carbon number of from 1 to 10, more preferably from 1 to 8, particularly preferably from 1 to 5.

-A-O-B-或-[A-C(=O)-O]m -B-中,A及B,各自獨立為可具有取代基之2價之烴基。-AOB- or -[AC(=O)-O] m -B-, A and B, each independently a divalent hydrocarbon group which may have a substituent.

A及B中之可有取代基之2價之烴基,例如與前述R2 中「可具有取代基之2價之烴基」所列舉者為相同之內容。The divalent hydrocarbon group which may have a substituent in A and B is, for example, the same as those listed in the above-mentioned R 2 "a divalent hydrocarbon group which may have a substituent".

A,以直鏈狀之脂肪族烴基為佳,以直鏈狀之伸烷基為較佳,以碳數1~5之直鏈狀之伸烷基為更佳,以伸甲基或伸乙基為特佳。A, a linear aliphatic hydrocarbon group is preferred, a linear alkyl group is preferred, and a linear alkyl group having 1 to 5 carbon atoms is more preferred. The base is especially good.

B,以直鏈狀或分支鏈狀之脂肪族烴基為佳,以伸甲基、伸乙基或烷基伸甲基為更佳。該烷基伸甲基中之烷基,以碳數1~5之直鏈狀之烷基為佳,以碳數1~3之直鏈狀之烷基為較佳,以甲基為最佳。B, preferably a linear or branched aliphatic hydrocarbon group, more preferably a methyl group, an ethyl group or an alkyl group. The alkyl group in the alkyl group is preferably a linear alkyl group having 1 to 5 carbon atoms, preferably a linear alkyl group having 1 to 3 carbon atoms, and most preferably a methyl group.

又,式-[A-C(=O)-O]m -B-所表示之基中,m為0~3之整數,0~2之整數為佳,以0或1為更佳,以1為最佳。Further, in the group represented by the formula -[AC(=O)-O] m -B-, m is an integer of 0 to 3, an integer of 0 to 2 is preferably used, and 0 or 1 is more preferable, and 1 is optimal.

式(a0-1)中,R3 ,為其環骨架中含有-SO2 -之環式基。In the formula (a0-1), R 3 is a cyclic group containing -SO 2 - in the ring skeleton.

R3 中之環式基係指,其環骨架中含有含-SO2 -之環的環式基,以該環作為一個環之方式計數,僅為該環之情形為單環式基,尚具有其他環構造之情形,則無關其構造皆稱為多環式基。R3 中之環式基,可為單環式基亦可,多環式基亦可。The cyclic group in R 3 means a ring group containing a ring containing -SO 2 - in the ring skeleton, and the ring is counted as a ring, and only the ring is in the form of a monocyclic group. In the case of other ring configurations, the structure is referred to as a polycyclic base. The cyclic group in R 3 may be a monocyclic group or a polycyclic group.

R3 ,特別是以其環骨架中含有-O-SO2 -之環式基為佳。R 3 is particularly preferably a cyclic group having -O-SO 2 - in its ring skeleton.

R3 中之環式基,以碳數為3~30為佳,以4~20為較佳,以4~15為更佳,以4~12為特佳。其中,該碳數為構成環骨架之碳原子之數,為不含取代基中之碳數者。The ring group in R 3 preferably has a carbon number of from 3 to 30, preferably from 4 to 20, more preferably from 4 to 15, and particularly preferably from 4 to 12. Here, the carbon number is the number of carbon atoms constituting the ring skeleton, and is the number of carbon atoms in the substituent.

R3 中之環式基,可為脂肪族環式基亦可,芳香族環式基亦可。較佳為脂肪族環式基。The cyclic group in R 3 may be an aliphatic cyclic group or an aromatic cyclic group. It is preferably an aliphatic cyclic group.

R3 中之脂肪族環式基,例如前述中所列舉之構成環狀脂肪族烴基之環骨架的碳原子之一部份被-SO2 -或-O-SO2 -所取代之基等。The aliphatic cyclic group in R 3 is, for example, a group in which one of the carbon atoms of the ring skeleton constituting the cyclic aliphatic hydrocarbon group exemplified above is substituted with -SO 2 - or -O-SO 2 - or the like.

更具體而言,例如,前述單環式基為,構成該環骨架之-CH2 -被-SO2 -所取代之單環鏈烷去除1個氫原子之基、構成該環之-CH2 -CH2 -被-O-SO2 -所取代之單環鏈烷去除1個氫原子之基等。又,前述多環式基為,構成該環骨架之-CH2 -被-SO2 -所取代之多環鏈烷(二環鏈烷、三環鏈烷、四環鏈烷等)去除1個氫原子所得之基、構成該環之-CH2 -CH2 -被-O-SO2 -所取代之多環鏈烷去除1個氫原子所得之基等。More specifically, for example, the monocyclic group is a group in which a monocyclic alkane in which -CH 2 - which is a ring skeleton is substituted by -SO 2 - removes one hydrogen atom, and -CH 2 constituting the ring -CH 2 - A monocyclic alkane substituted with -O-SO 2 - removes a group of one hydrogen atom or the like. Further, as the polycyclic group constituting the skeleton of the ring -CH 2 - is -SO 2 - as much as cycloalkane (bicyclo alkane, tricyclo alkane, tetracyclo alkane, etc.) substituted with one removed A group obtained by a hydrogen atom, a group obtained by removing one hydrogen atom from a polycyclic alkane in which -CH 2 -CH 2 - substituted by -O-SO 2 - is substituted.

R3 中之環式基,可具有取代基。該取代基,例如烷基、烷氧基、鹵素原子、鹵化烷基、羥基、氧原子(=O)、-COOR”、-OC(=O)R”、羥烷基、氰基等。The cyclic group in R 3 may have a substituent. The substituent is, for example, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, an oxygen atom (=O), -COOR", -OC(=O)R", a hydroxyalkyl group, a cyano group or the like.

該取代基之烷基,例如以碳數1~6之烷基為佳。該烷基,以直鏈狀或分支鏈狀為佳。具體而言,例如甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基、己基等。其中又以甲基或乙基為佳,甲基為特佳。The alkyl group of the substituent is preferably, for example, an alkyl group having 1 to 6 carbon atoms. The alkyl group is preferably a linear or branched chain. Specifically, for example, methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl, hexyl and the like. Among them, methyl or ethyl is preferred, and methyl is particularly preferred.

該取代基之烷氧基,例如以碳數1~6之烷氧基為佳。該烷氧基以直鏈狀或分支鏈狀為佳。具體而言,例如前述取代基之烷基所列舉之烷基中與氧原子(-O-)鍵結之基等。The alkoxy group of the substituent is preferably, for example, an alkoxy group having 1 to 6 carbon atoms. The alkoxy group is preferably a linear or branched chain. Specifically, for example, a group bonded to an oxygen atom (-O-) in the alkyl group exemplified as the alkyl group of the above substituent.

該取代基之鹵素原子,例如,氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。The halogen atom of the substituent, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or the like, is preferably a fluorine atom.

該取代基之鹵化烷基,例如前述烷基之氫原子的一部份或全部被前述鹵素原子所取代之基等。The halogenated alkyl group of the substituent, for example, a part or all of a hydrogen atom of the above-mentioned alkyl group is substituted by the aforementioned halogen atom or the like.

該取代基之鹵化烷基,例如前述取代基之烷基所列舉之烷基中之氫原子的一部份或全部被前述鹵素原子所取代之基等。該鹵化烷基以氟化烷基為佳,特別是以全氟烷基為佳。The halogenated alkyl group of the substituent, for example, a part or all of a hydrogen atom in the alkyl group exemplified by the alkyl group of the above substituent is substituted by the above halogen atom. The halogenated alkyl group is preferably a fluorinated alkyl group, particularly preferably a perfluoroalkyl group.

前述-COOR”、-OC(=O)R”中之R”,任一者皆為氫原子或碳數1~15之直鏈狀、分支鏈狀或環狀之烷基。Any of R-" in the above -COOR" and -OC(=O)R" is a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 15 carbon atoms.

R”為直鏈狀或分支鏈狀之烷基之情形時,以碳數1~10為佳,以碳數1~5為更佳,以甲基或乙基為特佳。When R" is a linear or branched alkyl group, it is preferably 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms, and particularly preferably a methyl group or an ethyl group.

R”為環狀之烷基之情形時,以碳數3~15為佳,以碳數4~12為更佳,以碳數5~10為最佳。具體而言,例如可被氟原子或氟化烷基取代亦可,未取代亦可之單環鏈烷、二環鏈烷、三環鏈烷、四環鏈烷等之多環鏈烷去除1個以上之氫原子所得之基等。更具體而言,例如環戊烷、環己烷等之單環鏈烷,或金剛烷、原菠烷、異菠烷、三環癸烷、四環十二烷等多環鏈烷去除1個以上之氫原子所得之基等。When R" is a cyclic alkyl group, it is preferably 3 to 15 carbon atoms, more preferably 4 to 12 carbon atoms, and most preferably 5 to 10 carbon atoms. Specifically, for example, a fluorine atom can be used. Or a fluorinated alkyl group may be substituted, and a polycyclic alkane such as a monocyclic alkane, a bicycloalkane, a tricycloalkane or a tetracycloalkane which is not substituted may be one obtained by removing one or more hydrogen atoms. More specifically, a monocyclic alkane such as cyclopentane or cyclohexane, or a polycyclic alkane such as adamantane, raw spinane, isopentane, tricyclodecane or tetracyclododecane is removed. The base obtained by more than one hydrogen atom, and the like.

該取代基之羥烷基,例如以碳數為1~6者為佳,具體而言,例如,前述取代基之烷基所列舉之烷基中之至少1個氫原子被羥基所取代之基等。The hydroxyalkyl group of the substituent is preferably, for example, a carbon number of 1 to 6, and specifically, for example, a group in which at least one hydrogen atom of the alkyl group recited in the alkyl group of the substituent is substituted with a hydroxyl group. Wait.

R3 ,更具體而言,例如下述通式(3-1)~(3-4)所表示之基等。R 3 is more specifically, for example, a group represented by the following general formulae (3-1) to (3-4).

[式中,A’為可含有氧原子或硫原子之碳數1~5之伸烷基、氧原子或硫原子,a為0~2之整數,R6 為烷基、烷氧基、鹵化烷基、羥基、-COOR”、-OC(=O)R”、羥烷基或氰基,R”為氫原子或烷基]。[wherein A' is an alkylene group having 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom, an oxygen atom or a sulfur atom, a is an integer of 0 to 2, and R 6 is an alkyl group, an alkoxy group, or a halogenated group. Alkyl, hydroxy, -COOR", -OC(=O)R", hydroxyalkyl or cyano, R" is a hydrogen atom or an alkyl group].

前述通式(3-1)~(3-4)中,A’為可含有氧原子(-O-)或硫原子(-S-)之碳數1~5之伸烷基、氧原子或硫原子。In the above formulae (3-1) to (3-4), A' is an alkylene group having 1 to 5 carbon atoms which may contain an oxygen atom (-O-) or a sulfur atom (-S-), or an oxygen atom or Sulfur atom.

A’中之碳數1~5之伸烷基,以直鏈狀或分支鏈狀之伸烷基為佳,例如伸甲基、伸乙基、n-伸丙基、異伸丙基等。The alkylene group having 1 to 5 carbon atoms in A' is preferably a linear or branched alkyl group, for example, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group or the like.

該伸烷基含有氧原子或硫原子之惰形,其具體例如,前述伸烷基之末端或碳原子間介有-O-或-S-之基等,例如-O-CH2 -、-CH2 -O-CH2 -、-S-CH2 -、-CH2 -S-CH2 -等。The alkylene group contains an inert form of an oxygen atom or a sulfur atom, and specifically, for example, a terminal of the alkylene group or a group having a -O- or -S- group, such as -O-CH 2 -, CH 2 -O-CH 2 -, -S-CH 2 -, -CH 2 -S-CH 2 -, and the like.

A’,例如以碳數1~5之伸烷基或-O-為佳,以碳數1~5之伸烷基為更佳,以伸甲基為最佳。A' is preferably, for example, an alkylene group having 1 to 5 carbon atoms or -O-, more preferably an alkylene group having 1 to 5 carbon atoms, and most preferably a methyl group.

a為0~2中任一者皆可,又以0為最佳。a is 0 to 2, and 0 is the best.

a為2之情形,複數之R2 可分別為相同亦可,相異亦可。In the case where a is 2, the plural R 2 may be the same or different.

R6 中之烷基、烷氧基、鹵化烷基、-COOR”、-OC(=O)R”、羥烷基,以分別與前述R3 中之環式基所可具有之取代基所列舉之烷基、烷氧基、鹵化烷基、-COOR”、-OC(=O)R”、羥烷基為相同之內容。R 6 in the alkyl group, alkoxy group, halogenated alkyl group, -COOR ", - OC (= O) R", a hydroxyl group, in the group may have a substituent respectively and the 3 in the cyclic group of R The alkyl, alkoxy, alkyl halide, -COOR", -OC(=O)R", and hydroxyalkyl groups are the same.

以下,將例示前述通式(3-1)~(3-4)所表示之具體的環式基。又,式中之「Ac」為乙醯基之意。Hereinafter, specific ring groups represented by the above formulas (3-1) to (3-4) will be exemplified. Also, the "Ac" in the formula is the meaning of the acetamino group.

R3 ,於上述之中,又以下述通式(3-1)所表示之基為佳,以使用前述化學式(3-1-1)、(3-1-18)、(3-3-1)及(3-4-1)之任一所表示之基所成群所選擇之至少一種為更佳,以化學式(3-1-1)所表示之基為最佳。R 3 , in the above, is preferably a group represented by the following formula (3-1), and the above chemical formulas (3-1-1), (3-1-18), (3-3-) are used. It is more preferable that at least one selected from the group represented by any of 1) and (3-4-1) is the group represented by the chemical formula (3-1-1).

本發明中,結構單位(a0-1),以下述通式(a0-1-11)所表示之結構單位為特佳。In the present invention, the structural unit (a0-1) is particularly preferably a structural unit represented by the following general formula (a0-1-11).

[式中,R1 與前述為相同之內容,R2’ 為直鏈狀或分支鏈狀之伸烷基,A’與前述為相同之內容]。[wherein R 1 is the same as described above, and R 2 ' is a linear or branched alkyl group, and A' is the same as described above].

R2’ 中之直鏈狀或分支鏈狀之伸烷基,以碳數為1~10為佳,以1~8為較佳,以1~5為更佳,以1~3為特佳,以1~2為最佳。The linear or branched chain alkyl group in R 2 ' is preferably 1 to 10 carbon atoms, preferably 1 to 8 carbon atoms, more preferably 1 to 5 carbon atoms, and particularly preferably 1 to 3 carbon atoms. , 1 to 2 is the best.

A’以伸甲基、氧原子(-O-)或硫原子(-S-)為佳。A' is preferably a methyl group, an oxygen atom (-O-) or a sulfur atom (-S-).

結構單位(a0-1),可單獨使用1種亦可,或將2種以上組合使用亦可。The structural unit (a0-1) may be used singly or in combination of two or more.

(A1)成份中之結構單位(a0-1)之比例,於使用含有該(A1)成份之正型光阻組成物形成光阻圖型之際,於提昇MEF、所形成之光阻圖型之形狀、CDU(面內均勻性)、LWR(線路寬度不均)等,相對於構成(A1)成份之全結構單位,以1~60莫耳%為佳,以5~50莫耳%為較佳,以10~45莫耳%為更佳。(A1) The ratio of the structural unit (a0-1) in the composition, when the photoresist pattern is formed using the positive photoresist composition containing the (A1) component, the MEF is formed, and the formed photoresist pattern is formed. The shape, CDU (in-plane uniformity), LWR (line width unevenness), etc., are preferably 1 to 60 mol%, and 5 to 50 mol%, based on the total structural unit of the component (A1). Preferably, it is more preferably 10 to 45 mol%.

(結構單位(a0-2))(Structural unit (a0-2))

結構單位(a0-2)為,上述通式(a0-2)所表示之結構單位。又,為不相當前述結構單位(a0-1),且含有酸解離性溶解抑制基之丙烯酸酯所衍生之結構單位。The structural unit (a0-2) is a structural unit represented by the above formula (a0-2). Further, it is a structural unit derived from an acrylate which does not have the above structural unit (a0-1) and which contains an acid dissociable dissolution inhibiting group.

結構單位(a0-2)中之酸解離性溶解抑制基,為解離前具有使(A1)成份全體對鹼顯影液為難溶之鹼溶解抑制性的同時,經由酸之解離而使該(A1)成份全體增大對鹼顯影液之溶解性之基。The acid dissociable dissolution inhibiting group in the structural unit (a0-2) has an alkali dissolution inhibiting property which is insoluble to the alkali developing solution by the entire component (A1) before dissociation, and is caused by dissociation of the acid (A1). The entire composition increases the solubility of the alkali developer.

式(a0-2)中,R為與前述式(a0-1)中之R1 為相同之內容。In the formula (a0-2), R is the same as R 1 in the above formula (a0-1).

式(a0-2)中,R22 ,為可與該R22 鍵結之碳原子共同形成脂肪族單環式基之基。In the formula (a0-2), R 22 is a group which can form an aliphatic monocyclic group together with the carbon atom bonded to the R 22 .

於此,「脂肪族單環式基」係指,不具有芳香屬性之單環式基之意。Here, the "aliphatic monocyclic group" means a monocyclic group having no aromatic property.

R22 中之脂肪族單環式基,以碳數4~8為佳,以5~8為更佳。The aliphatic monocyclic group in R 22 is preferably a carbon number of 4 to 8 and more preferably 5 to 8.

其中,該碳數為構成環骨架之碳原子之數,為不含取代基中之碳數者。Here, the carbon number is the number of carbon atoms constituting the ring skeleton, and is the number of carbon atoms in the substituent.

R22 中之脂肪族單環式基,可具有取代基亦可,不具有取代基亦可。取代基,例如碳數1~5之烷基、碳數1~5之烷氧基、氟原子、氟原子所取代之碳數1~5之氟化烷基、氧原子(=O)等。The aliphatic monocyclic group in R 22 may have a substituent or may have no substituent. The substituent is, for example, an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, a fluorine atom, a fluorinated alkyl group having 1 to 5 carbon atoms substituted by a fluorine atom, or an oxygen atom (=O).

脂肪族單環式基去除取代基之基本的環構造,並不限定為由碳及氫所形成之基(烴基),但以烴基為佳。又,「烴基」可為飽和或不飽和之任一者皆可,通常以飽和者為佳。The basic ring structure of the aliphatic monocyclic group-removing substituent is not limited to a group (hydrocarbon group) formed of carbon and hydrogen, but a hydrocarbon group is preferred. Further, the "hydrocarbon group" may be either saturated or unsaturated, and it is usually preferred to saturate.

該脂肪族單環式基,例如,可被碳數1~5之烷基、氟原子或氟化烷基取代亦可,未取代亦可之單環鏈烷去除1個以上之氫原子所得之基等。更具體而言,例如環戊烷、環己烷等之單環鏈烷去除1個以上之氫原子所得之基等。又,構成該些單環鏈烷去除1個以上之氫原子所得之基的環之碳原子的一部份被醚性氧原子(-O-)所取代者亦可。The aliphatic monocyclic group may be, for example, substituted by an alkyl group having 1 to 5 carbon atoms, a fluorine atom or a fluorinated alkyl group, and the unsubstituted polycycloalkane may be obtained by removing one or more hydrogen atoms. Base. More specifically, for example, a monocyclic alkane such as cyclopentane or cyclohexane is obtained by removing one or more hydrogen atoms. Further, a part of the carbon atoms of the ring constituting the group obtained by removing one or more hydrogen atoms of the monocyclic alkane may be substituted by an etheric oxygen atom (-O-).

式(a0-2)中,R21 為分支鏈狀之烷基。In the formula (a0-2), R 21 is a branched alkyl group.

分支鏈狀之烷基,其碳數以3~10為佳,以3~5為更佳。具體而言,例如異丙基、異丁基、tert-丁基、異戊基、新戊基等,又以異丙基為最佳。The branched chain alkyl group preferably has 3 to 10 carbon atoms and more preferably 3 to 5 carbon atoms. Specifically, for example, isopropyl, isobutyl, tert-butyl, isopentyl, neopentyl, etc., and isopropyl are most preferred.

式(a0-2)所表示之結構單位之具體例,例如下述式(a0-2-1)~(a0-2-20)所表示之結構單位等。Specific examples of the structural unit represented by the formula (a0-2) are, for example, structural units represented by the following formulas (a0-2-1) to (a0-2-20).

[式中,Rα ,表示氫原子、甲基或三氟甲基。][wherein, R α represents a hydrogen atom, a methyl group or a trifluoromethyl group. ]

結構單位(a0-2),可單獨使用1種亦可,或將2種以上組合使用亦可。The structural unit (a0-2) may be used singly or in combination of two or more.

(A1)成份中之結構單位(a0-2)之比例,相對於構成(A1)成份之全結構單位,以1~60莫耳%為佳,以5~50莫耳%為較佳,以10~45莫耳%為更佳。The ratio of the structural unit (a0-2) in the component (A1) is preferably from 1 to 60 mol%, more preferably from 5 to 50 mol%, based on the total structural unit constituting the component (A1). 10 to 45 mol% is better.

(結構單位(a1))(Structural unit (a1))

結構單位(a1)為,不相當於前述結構單位(a0-1)及結構單位(a0-2)之含有酸解離性溶解抑制基之丙烯酸酯所衍生之結構單位。The structural unit (a1) is a structural unit derived from an acrylate containing an acid dissociable dissolution inhibiting group of the structural unit (a0-1) and the structural unit (a0-2).

結構單位(a1)中之酸解離性溶解抑制基,為解離前具有使(A1)成份全體對鹼顯影液為難溶之鹼溶解抑制性的同時,經由酸之解離而使該(A1)成份全體增大對鹼顯影液之溶解性之基,其可使用目前為止被提案作為化學増幅型光阻用之基礎樹脂的酸解離性溶解抑制基之物。一般而言,係指與(甲基)丙烯酸等中之羧基形成環狀或鏈狀之三級烷酯之基;廣為已知者例如烷氧烷基等縮醛型酸解離性溶解抑制基等。又,「(甲基)丙烯酸酯」係指,α位鍵結氫原子之丙烯酸酯,與α位鍵結甲基之甲基丙烯酸酯之一者或二者之意。The acid dissociable dissolution inhibiting group in the structural unit (a1) has an alkali dissolution inhibitory property in which the entire component (A1) is insoluble to the alkali developing solution before dissociation, and the (A1) component is obtained by dissociation of the acid. As the group which increases the solubility to the alkali developing solution, the acid dissociable dissolution inhibiting group which has been proposed as a base resin for a chemical smear type resist can be used. In general, it refers to a group which forms a cyclic or chain-like tertiary alkyl ester with a carboxyl group in (meth)acrylic acid or the like; it is widely known as an acetal type acid dissociable dissolution inhibiting group such as an alkoxyalkyl group. Wait. Moreover, "(meth) acrylate" means one or both of an acrylate in which a hydrogen atom is bonded to the α-position, and a methacrylate in which a methyl group is bonded to the α-position.

於此,「三級烷酯」係指,羧基之氫原子,被鏈狀或環狀之烷基所取代而形成酯,其羰氧基(-C(O)-O-)末端之氧原子,與前述鏈狀或環狀之烷基的三級碳原子鍵結所形成之構造。該三級烷酯中,經由酸作用時,可使氧原子與三級碳原子之間的鍵結被切斷。Here, the "trialkyl ester" means a hydrogen atom of a carboxyl group which is substituted by a chain or a cyclic alkyl group to form an ester, and an oxygen atom at the terminal of a carbonyloxy group (-C(O)-O-) a structure formed by bonding to a tertiary carbon atom of the aforementioned chain or cyclic alkyl group. In the tertiary alkyl ester, when an acid acts, the bond between the oxygen atom and the tertiary carbon atom can be cut.

又,前述鏈狀或環狀之烷基可具有取代基。Further, the aforementioned chain or cyclic alkyl group may have a substituent.

以下,與羧基構成三級烷酯中,形成酸解離性之基,於方便上,將其稱為「三級烷酯型酸解離性溶解抑制基」。Hereinafter, in the case of forming a tertiary alkyl ester with a carboxyl group, an acid dissociable group is formed, and for convenience, it is referred to as a "trialkyl ester type acid dissociable dissolution inhibiting group".

三級烷酯型酸解離性溶解抑制基,例如脂肪族分支鏈狀酸解離性溶解抑制基、含有脂肪族環式基之酸解離性溶解抑制基等。The tertiary alkyl ester type acid dissociable dissolution inhibiting group is, for example, an aliphatic branched chain acid dissociable dissolution inhibiting group, an acid dissociable dissolution inhibiting group containing an aliphatic cyclic group, or the like.

於此,「脂肪族分支鏈狀」係指具有不含芳香族性之分支鏈狀之構造之意。「脂肪族分支鏈狀酸解離性溶解抑制基」之構造,並不限定為由碳及氫所形成之基(烴基),但以烴基為佳。又,「烴基」可為飽和或不飽和之任一者皆可,通常以飽和者為佳。Here, the "aliphatic branched chain" means a structure having a branched chain shape containing no aromaticity. The structure of the "aliphatic branched chain acid dissociable dissolution inhibiting group" is not limited to a group (hydrocarbon group) formed of carbon and hydrogen, but a hydrocarbon group is preferred. Further, the "hydrocarbon group" may be either saturated or unsaturated, and it is usually preferred to saturate.

脂肪族分支鏈狀酸解離性溶解抑制基,例如,-C(R71 )(R72 )(R73 )所表示之基等。式中,R71 ~R73 ,分別為獨立之碳數1~5之直鏈狀之烷基。-C(R71 )(R72 )(R73 )所表示之基,以碳數4~8為佳,具體而言,例如tert-丁基、2-甲基-2-丁基、2-甲基-2-戊基、3-甲基-3-戊基等。特別是以tert-丁基為佳。The aliphatic branched chain acid dissociable dissolution inhibiting group is, for example, a group represented by -C(R 71 )(R 72 )(R 73 ). In the formula, R 71 to R 73 are each independently a linear alkyl group having 1 to 5 carbon atoms. a group represented by -C(R 71 )(R 72 )(R 73 ), preferably having a carbon number of 4 to 8, specifically, for example, tert-butyl, 2-methyl-2-butyl, 2- Methyl-2-pentyl, 3-methyl-3-pentyl and the like. Especially tert-butyl is preferred.

「脂肪族環式基」為不具有芳香族性之單環式基或多環式基。The "aliphatic cyclic group" is a monocyclic group or a polycyclic group having no aromaticity.

結構單位(a1)中之「脂肪族環式基」,可具有取代基亦可,不具有取代基亦可。取代基,例如碳數1~5之烷基、碳數1~5之烷氧基、氟原子、氟原子所取代之碳數1~5之氟化烷基、氧原子(=O)等。The "aliphatic cyclic group" in the structural unit (a1) may have a substituent or may have no substituent. The substituent is, for example, an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, a fluorine atom, a fluorinated alkyl group having 1 to 5 carbon atoms substituted by a fluorine atom, or an oxygen atom (=O).

「脂肪族環式基」之去除取代基之基本環之構造,並不限定為由碳及氫所形成之基(烴基),但以烴基為佳。又,「烴基」可為飽和或不飽和之任一者皆可,通常以飽和者為佳。「脂肪族環式基」以多環式基為佳。The structure of the basic ring from which the substituent of the "aliphatic cyclic group" is removed is not limited to a group (hydrocarbon group) formed of carbon and hydrogen, but a hydrocarbon group is preferred. Further, the "hydrocarbon group" may be either saturated or unsaturated, and it is usually preferred to saturate. The "aliphatic ring group" is preferably a polycyclic group.

脂肪族環式基,例如,可被碳數1~5之烷基、氟原子或氟化烷基所取代亦可、未被取代亦可之單環鏈烷去除1個以上之氫原子所得之基、二環鏈烷、三環鏈烷、四環鏈烷等之多環鏈烷去除1個以上之氫原子所得之基等。更具體而言,例如環戊烷、環己烷等之單環鏈烷去除1個以上之氫原子所得之基,或金剛烷、原菠烷、異菠烷、三環癸烷、四環十二烷等多環鏈烷去除1個以上之氫原子所得之基等。又,該些單環鏈烷去除1個以上之氫原子所得之基或多環鏈烷去除1個以上之氫原子所得之基之構成環的碳原子之一部份可被醚性氧原子(-O-)所取代者亦可。The aliphatic cyclic group may be, for example, substituted by an alkyl group having 1 to 5 carbon atoms, a fluorine atom or a fluorinated alkyl group, or a monocyclic alkane which is not substituted may be obtained by removing one or more hydrogen atoms. A group obtained by removing one or more hydrogen atoms from a polycyclic alkane such as a bicycloalkane, a tricycloalkane or a tetracycloalkane. More specifically, a monocyclic alkane such as cyclopentane or cyclohexane is used to remove one or more hydrogen atoms, or adamantane, raw spinel, iso-araconine, tricyclodecane, tetracycline A group obtained by removing one or more hydrogen atoms from a polycyclic alkane such as dioxane. Further, a part of the carbon atoms of the constituent ring of the group obtained by removing one or more hydrogen atoms from the monocyclic alkane and removing one or more hydrogen atoms by the polycyclic alkane may be an etheric oxygen atom ( -O-) can also be replaced.

含有脂肪族環式基之酸解離性溶解抑制基,例如,(i) 1價之脂肪族環式基的環骨架上具有三級碳原子之基;(ii) 具有1價之脂肪族環式基,與具有與其鍵結之三級碳原子的分支鏈狀伸烷基之基;等。An acid dissociable dissolution inhibiting group containing an aliphatic cyclic group, for example, (i) a group having a tertiary carbon atom in a ring skeleton of a monovalent aliphatic ring group; (ii) having a monovalent aliphatic ring type a group, a group having a branched chain alkyl group having a tertiary carbon atom bonded thereto; and the like.

(i) 1價之脂肪族環式基的環骨架上具有三級碳原子之基之具體例,例如,下述通式(1-1)~(1-9)所表示之基等。(i) Specific examples of the group having a tertiary carbon atom in the ring skeleton of the monovalent aliphatic ring group, for example, a group represented by the following general formulae (1-1) to (1-9).

(ii) 具有1價之脂肪族環式基,與具有與其鍵結之三級碳原子的分支鏈狀伸烷基之基之具體例,例如,下述通式(2-1)~(2-6)所表示之基等。(ii) Specific examples of a monovalent aliphatic cyclic group and a branched alkyl group having a tertiary carbon atom bonded thereto, for example, the following general formula (2-1) to (2) -6) The base represented.

[式中,R14 為烷基,g為0~8之整數]。[wherein R 14 is an alkyl group, and g is an integer of 0 to 8].

[式中,R15 及R16 ,為分別獨立之烷基]。[wherein, R 15 and R 16 are independently alkyl groups].

上述R14 之烷基,以直鏈狀或分支鏈狀之烷基為佳。The alkyl group of the above R 14 is preferably a linear or branched alkyl group.

該直鏈狀之烷基,以碳數1~5為佳,以1~4為較佳,以1或2為更佳。具體而言,例如甲基、乙基、n-丙基、n-丁基、n-戊基等。其中又以甲基、乙基或n-丁基為佳,以甲基或乙基為更佳。The linear alkyl group preferably has a carbon number of 1 to 5, preferably 1 to 4, more preferably 1 or 2. Specifically, for example, a methyl group, an ethyl group, an n-propyl group, an n-butyl group, an n-pentyl group or the like. Among them, a methyl group, an ethyl group or an n-butyl group is preferred, and a methyl group or an ethyl group is more preferred.

該分支鏈狀之烷基,其碳數以3~10為佳,以3~5為更佳。具體而言,例如異丙基、異丁基、tert-丁基、異戊基、新戊基等,又以異丙基為最佳。The branched chain alkyl group preferably has 3 to 10 carbon atoms and more preferably 3 to 5 carbon atoms. Specifically, for example, isopropyl, isobutyl, tert-butyl, isopentyl, neopentyl, etc., and isopropyl are most preferred.

其中,前述脂肪族環式基為單環式基之情形,R14 之烷基則不含分支鏈狀之烷基。Wherein, the aliphatic cyclic group is a monocyclic group, and the alkyl group of R 14 does not contain a branched alkyl group.

g以0~3之整數為佳,以1~3之整數為更佳,以1或2為最佳。g is preferably an integer of 0 to 3, more preferably an integer of 1 to 3, and most preferably 1 or 2.

R15 ~R16 之烷基,例如與R14 之烷基為相同之內容。The alkyl group of R 15 to R 16 is, for example, the same as the alkyl group of R 14 .

上述式(1-1)~(1-9)、(2-1)~(2-6)中,構成環之碳原子的一部份可被醚性氧原子(-O-)所取代亦可。In the above formulae (1-1) to (1-9) and (2-1) to (2-6), a part of the carbon atoms constituting the ring may be substituted by an etheric oxygen atom (-O-). can.

又,式(1-1)~(1-9)、(2-1)~(2-6)中,構成環之碳原子所鍵結之氫原子可被取代基所取代。該取代基,例如碳數1~5之烷基、氟原子、氟化烷基等。Further, in the formulae (1-1) to (1-9) and (2-1) to (2-6), the hydrogen atom bonded to the carbon atom constituting the ring may be substituted with a substituent. The substituent is, for example, an alkyl group having 1 to 5 carbon atoms, a fluorine atom, a fluorinated alkyl group or the like.

「縮醛型酸解離性溶解抑制基」,一般而言,為取代羧基、羥基等鹼可溶性基末端之氫原子而與氧原子鍵結。隨後,經由曝光產生酸時,經由該酸之作用,而使縮醛型酸解離性溶解抑制基,與該縮醛型酸解離性溶解抑制基鍵結之氧原子之間的鍵結被切斷。The "acetal type acid dissociable dissolution inhibiting group" is generally bonded to an oxygen atom by substituting a hydrogen atom at the terminal of an alkali-soluble group such as a carboxyl group or a hydroxyl group. Subsequently, when an acid is generated by exposure, the acetal type acid dissociable dissolution inhibiting group is blocked by the action of the acid, and the bond between the oxygen atom bonded to the acetal type acid dissociating dissolution inhibiting group is cut off. .

縮醛型酸解離性溶解抑制基,例如,下述通式(p1)所表示之基等。The acetal type acid dissociable dissolution inhibiting group is, for example, a group represented by the following formula (p1).

[式中,R1’ ,R2’ 表示各自獨立之氫原子或碳數1~5之烷基,n表示0~3之整數,Y表示碳數1~5之烷基或脂肪族環式基]。Wherein R 1 ' and R 2' represent independently hydrogen atoms or alkyl groups having 1 to 5 carbon atoms, n represents an integer of 0 to 3, and Y represents an alkyl group having 1 to 5 carbon atoms or an aliphatic cyclic group. base].

前述式(p1)中,n以0~2之整數為佳,以0或1為更佳,以0為最佳。In the above formula (p1), n is preferably an integer of 0 to 2, more preferably 0 or 1, and most preferably 0.

R1’ ,R2’ 之碳數1~5之烷基,例如與上述R之碳數1~5之烷基為相同之內容,以甲基或乙基為佳,以甲基為最佳。The alkyl group having 1 to 5 carbon atoms of R 1 ' and R 2 ' is, for example, the same as the alkyl group having 1 to 5 carbon atoms of the above R, preferably a methyl group or an ethyl group, and preferably a methyl group. .

本發明中,R1’ ,R2’ 之中以至少1個為氫原子為佳。即,酸解離性溶解抑制基(p1),以下述通式(p1-1)所表示之基為佳。In the present invention, it is preferred that at least one of R 1 ' and R 2' is a hydrogen atom. In other words, the acid dissociable dissolution inhibiting group (p1) is preferably a group represented by the following formula (p1-1).

[式中,R1’ 、n、Y與上述為相同之內容]。[wherein, R 1 ' , n, and Y are the same as described above].

Y之碳數1~5之烷基,例如與上述R之碳數1~5之烷基為相同之內容。The alkyl group having 1 to 5 carbon atoms of Y is, for example, the same as the alkyl group having 1 to 5 carbon atoms of the above R.

Y之脂肪族環式基,可由以往ArF光阻等中被多數提案之單環或多環式之脂肪族環式基之中作適當之選擇使用,例如與上述「脂肪族環式基」為相同之例示內容。The aliphatic cyclic group of Y may be appropriately selected from among the monocyclic or polycyclic aliphatic cyclic groups which have been proposed by conventional ArF photoresists, for example, and the above-mentioned "aliphatic cyclic group" is The same example content.

又,縮醛型酸解離性溶解抑制基,又例如下述通式(p2)所示之基。Further, the acetal type acid dissociable dissolution inhibiting group is, for example, a group represented by the following formula (p2).

[式中,R17 、R18 為各自獨立之直鏈狀或分支鏈狀之烷基或為氫原子;R19 為直鏈狀、分支鏈狀或環狀之烷基,或,R17 及R19 分別獨立為直鏈狀或分支鏈狀之伸烷基,R17 之末端與R19 之末端可鍵結形成環]。Wherein R 17 and R 18 are each independently a linear or branched alkyl group or a hydrogen atom; R 19 is a linear, branched or cyclic alkyl group, or R 17 and R 19 is independently a linear or branched alkyl group, and the end of R 17 and the end of R 19 may be bonded to form a ring].

R17 、R18 中,烷基之碳數,較佳為1~15,可為直鏈狀、分支鏈狀之任一者,又以乙基、甲基為佳,以甲基為最佳。In R 17 and R 18 , the carbon number of the alkyl group is preferably from 1 to 15, and may be either a linear chain or a branched chain, and an ethyl group or a methyl group is preferred, and a methyl group is preferred. .

特別是以R17 、R18 之一者為氫原子,另一者為甲基為佳。In particular, one of R 17 and R 18 is a hydrogen atom, and the other is preferably a methyl group.

R19 為直鏈狀、分支鏈狀或環狀之烷基,碳數較佳為1~15,可為直鏈狀、分支鏈狀或環狀之任一者。R 19 is a linear, branched or cyclic alkyl group, preferably has 1 to 15 carbon atoms, and may be any of a linear chain, a branched chain or a cyclic group.

R19 為直鏈狀、分支鏈狀之情形時,以碳數1~5為佳,以乙基、甲基為更佳,特別是以乙基為最佳。When R 19 is a linear or branched chain, it is preferably a carbon number of 1 to 5, more preferably an ethyl group or a methyl group, and particularly preferably an ethyl group.

R19 為環狀之情形時,以碳數4~15為佳,以碳數4~12為更佳,以碳數5~10為最佳。具體而言,例如可被氟原子或氟化烷基取代亦可,未取代亦可之單環鏈烷、二環鏈烷、三環鏈烷、四環鏈烷等之多環鏈烷去除1個以上之氫原子所得之基等。具體而言,為由環戊烷、環己烷等之單環鏈烷,或金剛烷、原菠烷、異菠烷、三環癸烷、四環十二烷等多環鏈烷去除1個以上之氫原子所得之基等。其中又以金剛烷去除1個以上之氫原子所得之基為佳。When R 19 is a ring, it is preferably 4 to 15 carbon atoms, more preferably 4 to 12 carbon atoms, and most preferably 5 to 10 carbon atoms. Specifically, for example, a fluorine atom or a fluorinated alkyl group may be substituted, and an unsubstituted polycyclic alkane such as a monocyclic alkane, a bicycloalkane, a tricycloalkane or a tetracycloalkane may be removed. The base obtained by more than one hydrogen atom, and the like. Specifically, it is one monocyclic alkane such as cyclopentane or cyclohexane, or one polycyclic alkane such as adamantane, raw spinane, isopentane, tricyclodecane or tetracyclododecane. The base obtained by the above hydrogen atom and the like. Among them, the base obtained by removing one or more hydrogen atoms from adamantane is preferred.

又,上述式(p2)中,R17 及R19 為分別獨立之直鏈狀或分支鏈狀之伸烷基(較佳為碳數1~5之伸烷基)時,R19 之末端與R17 之末端可形成鍵結。Further, in the above formula (p2), when R 17 and R 19 are each independently a linear or branched alkyl group (preferably an alkyl group having 1 to 5 carbon atoms), the end of R 19 is A bond can be formed at the end of R 17 .

此時,R17 ,與R19 ,與R19 鍵結之氧原子中,該氧原子及R17 鍵結之碳原子形成為環式基。該環式基,以4~7員環為佳,以4~6員環為更佳。該環式基之具體例如,四氫吡喃基、四氫呋喃基等。At this time, R 17, and R 19, and R 19 bonded to an oxygen atom of the carbon and the oxygen atom bonding the R 17 atoms to form a cyclic group. The ring type is preferably a 4 to 7 member ring, and a 4 to 6 member ring is more preferred. Specific examples of the cyclic group include, for example, a tetrahydropyranyl group, a tetrahydrofuranyl group and the like.

縮醛型酸解離性溶解抑制基之具體例,例如,下述式(p3-1)~(p3-12)所表示之基等。Specific examples of the acetal type acid dissociable dissolution inhibiting group are, for example, groups represented by the following formulas (p3-1) to (p3-12).

[式中,R13 為氫原子或甲基,g與前述為相同之內容]。[wherein R 13 is a hydrogen atom or a methyl group, and g is the same as described above].

結構單位(a1),更具體而言,例如下述通式(a1-0-1)所表示之結構單位、下述通式(a1-0-2)所表示之結構單位等。The structural unit (a1) is more specifically, for example, a structural unit represented by the following general formula (a1-0-1), a structural unit represented by the following general formula (a1-0-2), and the like.

[式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,X1 為酸解離性溶解抑制基,Y2 為2價之鍵結基,X2 為酸解離性溶解抑制基]。Wherein R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; X 1 is an acid dissociable dissolution inhibiting group; Y 2 is a divalent bond group, and X 2 is a group ; It is an acid dissociative dissolution inhibitory group].

通式(a1-0-1)中,R與前述式(a0-1)中之R1 為相同之內容。In the formula (a1-0-1), R is the same as R 1 in the above formula (a0-1).

X1 ,只要為酸解離性溶解抑制基時,並未有特別限定,例如可為上述之三級烷酯型酸解離性溶解抑制基、縮醛型酸解離性溶解抑制基等,又以三級烷酯型酸解離性溶解抑制基為佳。X 1 is not particularly limited as long as it is an acid dissociable dissolution inhibiting group, and may be, for example, the above-mentioned tertiary alkyl ester type acid dissociable dissolution inhibiting group or acetal acid dissociating dissolution inhibiting group, and The alkyl ester type acid dissociable dissolution inhibiting group is preferred.

通式(a1-0-2)中,R與上述為相同之內容。In the formula (a1-0-2), R is the same as described above.

X2 ,與式(a1-0-1)中之X1 為相同之內容。X 2 is the same as X 1 in the formula (a1-0-1).

Y2 之2價之鍵結基,例如與前述式(a0-1)中之R2 為相同之內容。The two-valent bond group of Y 2 is, for example, the same as R 2 in the above formula (a0-1).

Y2 ,以前述伸烷基、2價之脂肪族環式基或含有雜原子之2價之鍵結基為佳。其中又以含有雜原子之2價之鍵結基為佳,特別是以具有氧原子作為雜原子之直鏈狀之基,例如含有酯鍵結之基為特佳。Y 2 is preferably an alkylene group, a divalent aliphatic ring group or a divalent bond group containing a hetero atom. Further, it is preferably a divalent bond group containing a hetero atom, and particularly a linear group having an oxygen atom as a hetero atom, and for example, a group containing an ester bond is particularly preferable.

其中又以前述-A-O-B-或-A-C(=O)-O-B-所表示之基為佳,特別是以-(CH2 )a -C(=O)-O-(CH2 )b -所表示之基為佳。Wherein the base represented by the aforementioned -AOB- or -AC(=O)-OB- is preferred, especially represented by -(CH 2 ) a -C(=O)-O-(CH 2 ) b - The basis is better.

a為1~5之整數,以1或2為佳,以1為最佳。a is an integer of 1 to 5, preferably 1 or 2, and 1 is most preferred.

b為1~5之整數,以1或2為佳,以1為最佳。b is an integer of 1 to 5, preferably 1 or 2, and 1 is most preferred.

結構單位(a1),更具體而言,例如下述通式(a1-1)~(a1-4)所表示之結構單位等。The structural unit (a1) is more specifically, for example, a structural unit represented by the following general formulae (a1-1) to (a1-4).

[式中,X’表示三級烷酯型酸解離性溶解抑制基,Y表示碳數1~5之烷基,或脂肪族環式基;n表示0~3之整數;Y2 表示2價之鍵結基;R與前述為相同之內容,R1’ 、R2’ 表示各自獨立之氫原子或碳數1~5之烷基]。[wherein, X' represents a tertiary alkyl ester type acid dissociable dissolution inhibiting group, Y represents an alkyl group having 1 to 5 carbon atoms, or an aliphatic cyclic group; n represents an integer of 0 to 3; and Y 2 represents a divalent value. The bonding group; R is the same as the above, and R 1 ' and R 2 ' represent a hydrogen atom independently or an alkyl group having 1 to 5 carbon atoms].

前述式中,X’為與前述X1 中所例示之三級烷酯型酸解離性溶解抑制基為相同之內容。In the above formula, X' is the same as the tertiary alkyl ester type acid dissociable dissolution inhibiting group exemplified in the above X 1 .

R1’ 、R2’ 、n、Y,分別與上述之「縮醛型酸解離性溶解抑制基」之説明中所列舉之通式(p1)中之R1’ 、R2’ 、n、Y為相同之內容。 R 1 ', R 2', n, Y, each of the above-described "acetal-type acid dissociable, dissolution inhibiting group" exemplified in the description of general formula (p1) in the R 1 ', R 2', n, Y is the same content.

Y2 ,為與上述通式(a1-0-2)中之Y2 為相同之內容。Y 2 is the same as Y 2 in the above formula (a1-0-2).

以下,將例示上述通式(a1-1)~(a1-4)所表示之結構單位之具體例。Hereinafter, specific examples of the structural unit represented by the above general formulae (a1-1) to (a1-4) will be exemplified.

以下之各式中,Rα ,表示氫原子、甲基或三氟甲基。In the following formulae, R α represents a hydrogen atom, a methyl group or a trifluoromethyl group.

結構單位(a1),可單獨使用1種亦可,或將2種以上組合使用亦可。The structural unit (a1) may be used singly or in combination of two or more.

本發明中,特別是就解析性、光阻圖型之形狀等之微影蝕刻特性優良等觀點,結構單位(a1),以具有由下述通式(a1-0-12)所表示之結構單位及下述通式(a1-0-2)所表示之結構單位所成群中所選擇之至少1種為佳。In the present invention, the structural unit (a1) has a structure represented by the following general formula (a1-0-12), in particular, in view of excellent lithographic etching characteristics such as an analytical property and a shape of a resist pattern. It is preferred that at least one selected from the group consisting of structural units represented by the following general formula (a1-0-2).

[式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R23 為烷基,R24 ,為可與該R24 鍵結之碳原子共同形成脂肪族多環式基之基,Y2 為2價之鍵結基,X2 為酸解離性溶解抑制基]。Wherein R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; R 23 is an alkyl group; and R 24 is a carbon atom which can be bonded to the R 24 bond; An aliphatic polycyclic group, Y 2 is a divalent bond group, and X 2 is an acid dissociable dissolution inhibiting group].

各式中,R、Y2 、X2 之説明為與前述為相同之內容。In the respective formulas, the description of R, Y 2 and X 2 is the same as described above.

式(a1-0-12)中,R23 之烷基,為與前述式(1-1)~(1-9)中之R14 之烷基所列舉之烷基為相同之內容,以異丙基為最佳。In the formula (a1-0-12), the alkyl group of R 23 is the same as the alkyl group exemplified for the alkyl group of R 14 in the above formulae (1-1) to (1-9), and is different. The propyl is the best.

R24 為可與該R24 鍵結之碳原子共同形成脂肪族多環式基者,其例如與前述三級烷酯型酸解離性溶解抑制基中所列舉之脂肪族環式基中,為多環式基之基為相同之內容。R 24 is an aliphatic polycyclic group which can form a carbon atom bonded to the R 24 , and is, for example, an aliphatic cyclic group exemplified in the above-mentioned tertiary alkyl ester type acid dissociable dissolution inhibiting group. The basis of the polycyclic base is the same.

式(a1-0-12)所表示之結構單位之具體例如,前述式(a1-1-1)~(a1-1-15)、(a1-1-26)~(a1-1-29)所表示之結構單位等。Specific examples of the structural unit represented by the formula (a1-0-12) are, for example, the above formulas (a1-1-1) to (a1-1-15), (a1-1-26) to (a1-1-29). The structural unit represented, etc.

式(a1-0-2)所表示之結構單位,例如前述式(a1-3)或(a1-4)所表示之結構單位等,特別是以式(a1-3)所表示之結構單位為佳。The structural unit represented by the formula (a1-0-2), for example, the structural unit represented by the above formula (a1-3) or (a1-4), and the like, in particular, the structural unit represented by the formula (a1-3) good.

式(a1-0-2)所表示之結構單位,特別是以式中之Y2 為前述-A-O-B-或-A-C(=O)-O-B-所表示之基為佳。Of formula (a1-0-2) represented by the structural unit, in particular in the formula Y 2 is the -AOB- or -AC (= O) -OB- preferably the group represented.

該結構單位中,較佳之結構單位,例如下述通式(a1-3-01)所表示之結構單位;下述通式(a1-3-02)所表示之結構單位;下述通式(a1-3-03)所表示之結構單位等。In the structural unit, a preferred structural unit is, for example, a structural unit represented by the following general formula (a1-3-01); a structural unit represented by the following general formula (a1-3-02); A1-3-03) The structural unit represented by etc.

(式中,R、R14 與前述為相同之內容,R13 為氫原子或甲基,a為1~10之整數。)(wherein R and R 14 are the same as those described above, R 13 is a hydrogen atom or a methyl group, and a is an integer of from 1 to 10.)

(式中,R、R14 與前述為相同之內容,R13 為氫原子或甲基,a為1~10之整數,n’為0~3之整數。)(wherein R and R 14 are the same as defined above, R 13 is a hydrogen atom or a methyl group, a is an integer of 1 to 10, and n' is an integer of 0 to 3.)

[式中,R與前述為相同之內容,Y2 ’及Y2 ”為各自獨立之2價之鍵結基,X’為酸解離性溶解抑制基,n為0~3之整數]。[wherein R is the same as described above, and Y 2 ' and Y 2 " are each a two-valent bond group independently, and X' is an acid dissociable dissolution inhibiting group, and n is an integer of 0 to 3].

式(a1-3-01)~(a1-3-02)中,R13 ,以氫原子為佳。In the formulae (a1-3-01) to (a1-3-02), R 13 is preferably a hydrogen atom.

a,以1~8之整數為佳,以1~5之整數為更佳,以1或2為最佳。a is preferably an integer of from 1 to 8, more preferably an integer of from 1 to 5, and most preferably 1 or 2.

n’,以1或2為佳,以2為最佳。n' is preferably 1 or 2, and 2 is most preferred.

式(a1-3-01)所表示之結構單位之具體例如,前述式(a1-3-25)~(a1-3-26)所表示之結構單位等。Specific examples of the structural unit represented by the formula (a1-3-01) include structural units represented by the above formulas (a1-3-25) to (a1-3-26).

式(a1-3-02)所表示之結構單位之具體例如,前述式(a1-3-27)~(a1-3-28)所表示之結構單位等。Specific examples of the structural unit represented by the formula (a1-3-02) include structural units represented by the above formulas (a1-3-27) to (a1-3-28).

式(a1-3-03)中,Y2 ’、Y2 ”中之2價之鍵結基,為與前述通式(a1-3)中之Y2 為相同之內容。In the formula (a1-3-03), the divalent bond group in Y 2 ', Y 2 " is the same as Y 2 in the above formula (a1-3).

Y2 ’,以具有取代基之2價之烴基為佳,以直鏈狀之脂肪族烴基為更佳,以直鏈狀之伸烷基為最佳。其中又以碳數1~5之直鏈狀之伸烷基為佳,以伸甲基、伸乙基為最佳。Y 2 ' is preferably a divalent hydrocarbon group having a substituent, more preferably a linear aliphatic hydrocarbon group, and most preferably a linear alkyl group. Among them, a linear alkyl group having a carbon number of 1 to 5 is preferred, and a methyl group and an ethyl group are preferred.

Y2 ”,以具有取代基之2價之烴基為佳,以直鏈狀之脂肪族烴基為更佳,以直鏈狀之伸烷基為最佳。其中又以碳數1~5之直鏈狀之伸烷基為佳,以伸甲基、伸乙基為最佳。Y 2 ", preferably a divalent hydrocarbon group having a substituent, more preferably a linear aliphatic hydrocarbon group, and a linear alkyl group is preferred, wherein the carbon number is 1-5. The chain-like alkyl group is preferred, and the methyl group and the ethyl group are most preferred.

X’中之酸解離性溶解抑制基,例如與前述為相同之內容,以三級烷酯型酸解離性溶解抑制基為佳,以上述(i)1價之脂肪族環式基的環骨架上具有三級碳原子之基為更佳,其中又以前述通式(1-1)所表示之基為佳。The acid dissociable dissolution inhibiting group in X' is, for example, the same as the above, preferably a tertiary alkyl ester type acid dissociable dissolution inhibiting group, and the above (i) monovalent aliphatic ring group ring skeleton The group having a tertiary carbon atom is more preferable, and the group represented by the above formula (1-1) is preferred.

n為0~3之整數,n以0~2之整數為佳,以0或1為更佳,以1為最佳。n is an integer of 0 to 3, n is preferably an integer of 0 to 2, more preferably 0 or 1, and most preferably 1.

式(a1-3-03)所表示之結構單位,以下述通式(a1-3-03-1)或(a1-3-03-2)所表示之結構單位為佳。其中又以式(a1-3-03-1)所表示之結構單位為佳,以前述式(a1-3-29)~(a1-3-30)所表示之結構單位為特佳。The structural unit represented by the formula (a1-3-03) is preferably a structural unit represented by the following formula (a1-3-03-1) or (a1-3-03-2). Further, the structural unit represented by the formula (a1-3-03-1) is preferable, and the structural unit represented by the above formulas (a1-3-29) to (a1-3-30) is particularly preferable.

[式中,R及R14 分別與前述為相同之內容,R20 為氫原子或甲基,a為1~10之整數,b為1~10之整數,t為0~3之整數]。In the formula, R and R 14 are each the same as defined above, R 20 is a hydrogen atom or a methyl group, a is an integer of from 1 to 10, b is an integer of from 1 to 10, and t is an integer of from 0 to 3.

a以1~5之整數為佳,以1或2為特佳。a is preferably an integer of 1 to 5, and particularly preferably 1 or 2.

b以1~5之整數為佳,以1或2為特佳。b is preferably an integer of 1 to 5, and particularly preferably 1 or 2.

t以1~3之整數為佳,以1或2為特佳。t is preferably an integer of 1 to 3, and particularly preferably 1 or 2.

本發明中,特別是以至少具有2種結構單位(a1)為佳。就提升良好之微影蝕刻特性之觀點,(A1)成份所具有之結構單位(a1),以2~4種為佳,以2或3種為更佳。In the present invention, it is particularly preferred to have at least two structural units (a1). From the viewpoint of improving the excellent lithographic etching characteristics, the structural unit (a1) of the component (A1) is preferably 2 to 4, more preferably 2 or 3.

此時,該至少2種之中,至少1種為,由前述通式(a1-0-12)所表示之結構單位及前述通式(a1-0-2)所表示之結構單位所成群中所選擇之至少1種為佳。In this case, at least one of the at least two types is a group consisting of a structural unit represented by the above formula (a1-0-12) and a structural unit represented by the above formula (a1-0-2). At least one of the choices selected is preferred.

此時,該至少2種之結構單位(a1),可僅由前述通式(a1-0-12)所表示之結構單位及前述通式(a1-0-2)所表示之結構單位所成群中所選擇者所構成亦可,或該些結構單位之至少1種,與不屬於該內容之結構單位(a1)之組合亦可。In this case, the at least two structural units (a1) may be formed only by the structural unit represented by the above formula (a1-0-12) and the structural unit represented by the above formula (a1-0-2). The selected one of the groups may be configured, or at least one of the structural units may be combined with a structural unit (a1) not belonging to the content.

可使用前述通式(a1-0-12)所表示之結構單位及前述通式(a1-0-2)所表示之結構單位所成群中所選出之至少1種之組合,不屬於該等內容之結構單位(a1),例如前述通式(a1-1)之具體例所例示之包含式(a1-1-1)~(a1-1-2)、(a1-1-7)~(a1-1-15)之下述通式(a1-0-10)所表示之結構單位、前述通式(a1-2)所表示之結構單位、前述通式(a1-4)所表示之結構單位等。A combination of at least one selected from the group consisting of the structural unit represented by the above formula (a1-0-12) and the structural unit represented by the above formula (a1-0-2) may not be used. The structural unit (a1) of the content includes, for example, the formula (a1-1-1) to (a1-1-2), (a1-1-7) to (example) of the specific example of the above formula (a1-1). A1-1-15) a structural unit represented by the following general formula (a1-0-10), a structural unit represented by the above formula (a1-2), and a structure represented by the above formula (a1-4) Units, etc.

前述通式(a1-0-10)所表示之結構單位,特別是以包含前述式(a1-1-1)~式(a1-1-2)之下述通式(a1-1-101)所表示之結構單位為佳。The structural unit represented by the above formula (a1-0-10), in particular, the following formula (a1-1-101) containing the above formula (a1-1-1) to formula (a1-1-2) The structural unit represented is preferred.

[式中,R與前述為相同之內容,R25 及R11 為分別獨立之碳數1~5之直鏈狀之烷基,R24 與前述為相同之內容]。In the formula, R is the same as described above, and R 25 and R 11 are each independently a linear alkyl group having 1 to 5 carbon atoms, and R 24 is the same as described above.

(A1)成份中,結構單位(a1)之比例,相對於構成(A1)成份之全結構單位,以10~80莫耳%為佳,以12~70莫耳%為更佳,以15~50莫耳%為最佳。於下限值以上時,作為光阻組成物時可容易得到圖型,於上限值以下時可得到與其他結構單位之平衡。In the component (A1), the ratio of the structural unit (a1) is preferably from 10 to 80 mol%, more preferably from 12 to 70 mol%, and more preferably from 15 to 70 mol% based on the total structural unit constituting the component (A1). 50% Mo is the best. When it is more than the lower limit value, the pattern can be easily obtained as a photoresist composition, and when it is at most the upper limit value, a balance with other structural units can be obtained.

(結構單位(a2))(Structural unit (a2))

結構單位(a2)為,含有含內酯之環式基之丙烯酸酯所衍生之結構單位。The structural unit (a2) is a structural unit derived from an acrylate containing a lactone-containing cyclic group.

於此,含內酯之環式基係指,含有含-O-C(O)-構造之一個環(內酯環)的環式基。以內酯環作為一個單位之環計數,僅為內酯環之情形為單環式基,尚具有其他環構造之情形,則無關其構造皆稱為多環式基。Here, the lactone-containing cyclic group means a cyclic group containing one ring (lactone ring) having a -O-C(O)-structure. The ring count of the lactone ring as a unit is only a monocyclic group in the case of a lactone ring, and has other ring structures, and the structure is called a polycyclic group irrespective of its structure.

結構單位(a2)之內酯環式基,於共聚物(A1)使用於光阻膜之形成之情形,可有效提高光阻膜對基盤之密著性、提高與含有水之顯影液的親和性等。The lactone ring group of the structural unit (a2), when the copolymer (A1) is used for the formation of the photoresist film, can effectively improve the adhesion of the photoresist film to the substrate and improve the affinity with the developer containing water. Sex and so on.

結構單位(a2),並未有特別限定,而可使用任意之單位。The structural unit (a2) is not particularly limited, and any unit can be used.

具體而言,含內酯之單環式基,例如4~6員環內酯去除1個氫原子所得之基,例如β-丙內酯去除1個氫原子所得之基、γ-丁內酯去除1個氫原子所得之基、δ-戊內酯去除1個氫原子所得之基等。又,含內酯之多環式基,例如,具有內酯環之二環鏈烷、三環鏈烷、四環鏈烷去除1個氫原子所得之基等。Specifically, a monocyclic group containing a lactone, for example, a group obtained by removing one hydrogen atom from 4 to 6 membered ring lactones, for example, a group obtained by removing one hydrogen atom from β-propiolactone, γ-butyrolactone A group obtained by removing one hydrogen atom, a group obtained by removing one hydrogen atom by δ-valerolactone, and the like. Further, the polycyclic group having a lactone is, for example, a group obtained by removing a hydrogen atom from a dicycloalkane, a tricycloalkane or a tetracyclic alkane having a lactone ring.

結構單位(a2)之例,更具體而言,例如,下述通式(a2-1)~(a2-5)所表示之結構單位等。In the example of the structural unit (a2), more specifically, for example, a structural unit represented by the following general formulae (a2-1) to (a2-5).

[式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R’分別獨立表示氫原子、碳數1~5之烷基、碳數1~5之烷氧基或-COOR”,R”為氫原子或烷基,R29 為單鍵或2價之鍵結基,s”為0或1~2之整數,A”可含有氧原子或硫原子之碳數1~5之伸烷基、氧原子或硫原子,m為0或1之整數]。[In the formula, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms, and R' each independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, and a carbon number of 1 to 5; Alkoxy or -COOR", R" is a hydrogen atom or an alkyl group, R 29 is a single bond or a divalent bond group, s" is an integer of 0 or 1-2, and A" may contain an oxygen atom or sulfur The alkyl group having 1 to 5 carbon atoms, an oxygen atom or a sulfur atom, and m is an integer of 0 or 1.

通式(a2-1)~(a2-5)中之R,為與前述結構單位(a1)中之R為相同之內容。R in the general formulae (a2-1) to (a2-5) is the same as R in the above structural unit (a1).

R’之碳數1~5之烷基,例如甲基、乙基、丙基、n-丁基、tert-丁基等。The alkyl group having 1 to 5 carbon atoms of R', for example, a methyl group, an ethyl group, a propyl group, an n-butyl group, a tert-butyl group or the like.

R’之碳數1~5之烷氧基,例如甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基等。The alkoxy group having 1 to 5 carbon atoms of R', for example, a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group, a tert-butoxy group or the like.

R’,於考慮工業上容易取得等觀點,以氫原子為佳。R' is preferably a hydrogen atom from the viewpoint of easy industrial availability.

R”為直鏈狀或分支鏈狀之烷基之情形時,以碳數1~10為佳,以碳數1~5為更佳。When R" is a linear or branched alkyl group, the carbon number is preferably from 1 to 10, more preferably from 1 to 5.

R”為環狀之烷基之情形時,以碳數3~15為佳,以碳數4~12為更佳,以碳數5~10為最佳。具體而言,例如可被氟原子或氟化烷基取代亦可,未取代亦可之單環鏈烷、二環鏈烷、三環鏈烷、四環鏈烷等之多環鏈烷去除1個以上之氫原子所得之基等。具體而言,為由環戊烷、環己烷等之單環鏈烷,或金剛烷、原菠烷、異菠烷、三環癸烷、四環十二烷等多環鏈烷去除1個以上之氫原子所得之基等。When R" is a cyclic alkyl group, it is preferably 3 to 15 carbon atoms, more preferably 4 to 12 carbon atoms, and most preferably 5 to 10 carbon atoms. Specifically, for example, a fluorine atom can be used. Or a fluorinated alkyl group may be substituted, and a polycyclic alkane such as a monocyclic alkane, a bicycloalkane, a tricycloalkane or a tetracycloalkane which is not substituted may be one obtained by removing one or more hydrogen atoms. Specifically, it is removed by a monocyclic alkane such as cyclopentane or cyclohexane, or a polycyclic alkane such as adamantane, raw spinane, isopentane, tricyclodecane or tetracyclododecane. The base obtained by more than one hydrogen atom, and the like.

A”,例如以碳數1~5之伸烷基或-O-為佳,以碳數1~5之伸烷基為更佳,以伸甲基為最佳。A" is, for example, preferably an alkylene group having 1 to 5 carbon atoms or -O-, more preferably an alkylene group having 1 to 5 carbon atoms, and most preferably a methyl group.

R29 為單鍵或2價之鍵結基。2價之鍵結基,為與前述通式(a1-0-2)中之Y2 所説明之2價之鍵結基為相同之內容,其中又以,伸烷基、酯鍵結(-C(=O)-O-),或該些之組合為佳。R29 中作為2價之鍵結基的伸烷基,以直鏈狀或分支鏈狀之伸烷基為更佳。具體而言,前述Y2 中之A中脂肪族烴基所列舉之直鏈狀之伸烷基、分支鏈狀之伸烷基為相同之內容。R 29 is a single bond or a divalent bond group. The divalent bond group is the same as the divalent bond group described by Y 2 in the above formula (a1-0-2), wherein the alkyl group and the ester bond (- C(=O)-O-), or a combination of these is preferred. The alkylene group as a divalent bond group in R 29 is more preferably a linear or branched alkyl group. Specifically, the linear alkyl group and the branched alkyl group which are exemplified in the aliphatic hydrocarbon group in A in the above Y 2 are the same.

s”以1~2之整數為佳。s" is preferably an integer of 1 to 2.

以下為前述通式(a2-1)~(a2-5)所表示之結構單位之具體例示,。以下之各式中,Rα ,表示氫原子、甲基或三氟甲基。The following is a specific example of the structural unit represented by the above-described general formulae (a2-1) to (a2-5). In the following formulae, R α represents a hydrogen atom, a methyl group or a trifluoromethyl group.

(A1)成份中,結構單位(a2),可單獨使用1種亦可,或將2種以上組合使用亦可。In the component (A1), the structural unit (a2) may be used singly or in combination of two or more.

結構單位(a2),以由前述通式(a2-1)~(a2-5)所表示之結構單位所成群所選擇之至少1種為佳,以由通式(a2-1)~(a2-3)所表示之結構單位所成群所選出之至少1種為更佳。其中又以使用由化學式(a2-1-1)、(a2-2-1)、(a2-2-7)、(a2-3-1)及(a2-3-5)所表示之結構單位所成群所選擇之至少1種為佳。The structural unit (a2) is preferably at least one selected from the group consisting of the structural units represented by the above formulas (a2-1) to (a2-5), and is represented by the general formula (a2-1) to A2-3) It is more preferable that at least one selected from the group of structural units represented is a group. Wherein the structural units represented by the chemical formulas (a2-1-1), (a2-2-1), (a2-2-7), (a2-3-1), and (a2-3-5) are used. At least one selected from the group is preferred.

(A1)成份中之結構單位(a2)之比例,就使用含有該(A1)成份之正型光阻組成物所形成之光阻膜對基板等之支撐體的密著性、與顯影液之親和性優良等觀點,相對於構成(A1)成份之全結構單位,以1~50莫耳%以上為佳,以5~50莫耳%為較佳,以10~45莫耳%為更佳。The ratio of the structural unit (a2) in the component (A1) is the adhesion of the photoresist film formed of the positive resist composition containing the component (A1) to the support of the substrate or the like, and the developer The viewpoint of excellent affinity is preferably 1 to 50 mol% or more, more preferably 5 to 50 mol%, and more preferably 10 to 45 mol%, based on the total structural unit constituting the component (A1). .

又,(A1)成份中,就各種微影蝕刻特性優良之觀點,前述結構單位(a0-1)、前述結構單位(a0-2),及結構單位(a2)之合計比例(不具有結構單位(a2)之情形時,為結構單位(a0-1)及(a0-2)之合計比例),相對於構成(A1)成份之全結構單位,以30~85莫耳%為佳,35~85莫耳%為更佳,以35~82莫耳%為最佳。於上述範圍內時,可使MEF、CDU、圖型形狀達到更佳狀態。Further, in the component (A1), the total ratio of the structural unit (a0-1), the structural unit (a0-2), and the structural unit (a2) is excellent in various lithographic etching characteristics (there is no structural unit) In the case of (a2), the total ratio of the structural units (a0-1) and (a0-2) is preferably 30 to 85 mol% with respect to the total structural unit constituting the component (A1), 35 to 85% Mo is more preferred, with 35 to 82 mol% being the best. When it is within the above range, the MEF, CDU, and pattern shape can be made better.

(結構單位(a3))(Structural unit (a3))

結構單位(a3),為含有含極性基之脂肪族烴基之丙烯酸酯所衍生之結構單位。The structural unit (a3) is a structural unit derived from an acrylate containing a polar group-containing aliphatic hydrocarbon group.

(A1)成份具有結構單位(a3)時,可提高(A)成份之親水性,提高與顯影液之親和性,提高曝光部之鹼溶解性,而有助於提高解析性。When the component (A3) has a structural unit (a3), the hydrophilicity of the component (A) can be improved, the affinity with the developer can be improved, and the alkali solubility of the exposed portion can be improved, which contributes to the improvement of the resolution.

極性基例如,羥基、氰基、羧基、烷基之氫原子的一部份被氟原子所取代之羥烷基等,特別是以羥基為佳。The polar group is, for example, a hydroxyalkyl group in which a part of a hydrogen atom of a hydroxyl group, a cyano group, a carboxyl group or an alkyl group is substituted with a fluorine atom, and particularly preferably a hydroxyl group.

脂肪族烴基,例如碳數1~10之直鏈狀或分支鏈狀之烴基(較佳為伸烷基),或多環式之脂肪族烴基(多環式基)等。該多環式基例如可由ArF準分子雷射用光阻組成物用之樹脂中,被多數提案之物質中適當選擇使用。該多環式基之碳數以7~30為佳。The aliphatic hydrocarbon group is, for example, a linear or branched hydrocarbon group (preferably an alkylene group) having 1 to 10 carbon atoms, or a polycyclic aliphatic hydrocarbon group (polycyclic group). The polycyclic group may be, for example, a resin for use in an ArF excimer laser photoresist composition, and is appropriately selected from most of the proposed materials. The polycyclic group has a carbon number of 7 to 30.

其中又以含有含羥基、氰基、羧基,或烷基之氫原子的一部份被氟原子所取代之羥烷基的脂肪族多環式基的丙烯酸酯所衍生之結構單位為更佳。該多環式基例如,由二環鏈烷、三環鏈烷、四環鏈烷等去除2個以上之氫原子所得之基等。具體而言,由金剛烷、原菠烷、異菠烷、三環癸烷、四環十二烷等之多環鏈烷去除2個以上之氫原子所得之基等。該些多環式基之中,又以金剛烷去除2個以上之氫原子所得之基、原菠烷去除2個以上之氫原子所得之基、四環十二烷去除2個以上之氫原子所得之基於工業上為佳。Further, a structural unit derived from an aliphatic polycyclic acrylate having a hydroxyalkyl group in which a part of a hydrogen atom containing a hydroxyl group, a cyano group, a carboxyl group or an alkyl group is substituted by a fluorine atom is more preferable. The polycyclic group is, for example, a group obtained by removing two or more hydrogen atoms from a bicycloalkane, a tricycloalkane or a tetracycloalkane. Specifically, a group obtained by removing two or more hydrogen atoms from a polycyclic alkane such as adamantane, prorotane, isopentane, tricyclodecane or tetracyclododecane is used. Among these polycyclic groups, a group obtained by removing two or more hydrogen atoms from adamantane, a group obtained by removing two or more hydrogen atoms from raw spinel, and a tetracyclododecane removing two or more hydrogen atoms. The results obtained are based on industry.

結構單位(a3)中,含有極性基之脂肪族烴基中之烴基為碳數1~10之直鏈狀或分支鏈狀之烴基時,以丙烯酸之羥基乙基酯所衍生之結構單位為佳,該烴基為多環式基時,以下述式(a3-1)所表示之結構單位、(a3-2)所表示之結構單位、(a3-3)所表示之結構單位為較佳之例示。In the structural unit (a3), when the hydrocarbon group in the aliphatic hydrocarbon group having a polar group is a linear or branched hydrocarbon group having 1 to 10 carbon atoms, the structural unit derived from the hydroxyethyl acrylate is preferred. When the hydrocarbon group is a polycyclic group, the structural unit represented by the following formula (a3-1), the structural unit represented by (a3-2), and the structural unit represented by (a3-3) are preferably exemplified.

[式中,R與前述為相同之內容,j為1~3之整數,k為1~3之整數,t’為1~3之整數,1為1~5之整數,s為1~3之整數。][wherein R is the same as the above, j is an integer of 1 to 3, k is an integer of 1 to 3, t' is an integer of 1 to 3, 1 is an integer of 1 to 5, and s is 1 to 3. The integer. ]

式(a3-1)中,j以1或2為佳,以1為更佳。j為2之情形時,以羥基鍵結於金剛烷基之3位與5位者為佳。j為1之情形時,以羥基鍵結於金剛烷基之3位者為佳。In the formula (a3-1), j is preferably 1 or 2, and more preferably 1 is used. When j is 2, it is preferred that the hydroxyl group is bonded to the 3 and 5 positions of the adamantyl group. When j is 1, it is preferred that the hydroxy group is bonded to the adamantyl group.

j以1為佳,特別是羥基鍵結於金剛烷基之3位者為佳。j is preferably 1 and particularly preferably a hydroxyl group bonded to the adamantyl group.

式(a3-2)中,k以1為佳。以氰基鍵結於原菠烷基之5位或6位者為佳。In the formula (a3-2), k is preferably 1. It is preferred that the cyano group is bonded to the 5- or 6-position of the original spinnyl group.

式(a3-3)中,t’以1為佳。1以1為佳。s以1為佳。該些以丙烯酸之羧基末端鍵結2-原菠烷基或3-原菠烷基者為佳。氟化烷醇為鍵結於原菠烷基之5或6位者為佳。In the formula (a3-3), t' is preferably 1. 1 is better than 1. s is better than 1. These are preferably bonded to the 2-originyl group or the 3-pyrosyl group at the carboxyl end of the acrylic acid. The fluorinated alkanol is preferably bonded to the 5 or 6 position of the original spinnyl group.

結構單位(a3),可單獨使用1種亦可,或將2種以上組合使用亦可。The structural unit (a3) may be used singly or in combination of two or more.

(A1)成份中之結構單位(a3)之比例,相對於構成(A1)成份之全結構單位,以5~50莫耳%為佳,以5~40莫耳%為更佳,以5~25莫耳%為最佳。The ratio of the structural unit (a3) in the component (A1) is preferably 5 to 50 mol%, more preferably 5 to 40 mol%, and more preferably 5 to 50% of the total structural unit constituting the component (A1). 25% Mo is the best.

(其他結構單位)(other structural units)

共聚物(A1),於不損本發明之効果之範圍,可含有上述結構單位(a1)~(a3)以外之其他結構單位(以下,亦稱為結構單位(a4))。The copolymer (A1) may contain other structural units (hereinafter also referred to as structural units (a4)) other than the above structural units (a1) to (a3) insofar as the effects of the present invention are not impaired.

結構單位(a4),只要為未分類為上述之結構單位(a1)~(a3)之其他結構單位時,則並未有特別之限定,其可使用ArF準分子雷射用、KrF準分子雷射用(較佳為ArF準分子雷射用)等光阻用樹脂所使用之以往已知之多數結構單位。The structural unit (a4) is not particularly limited as long as it is other structural units not classified into the above structural units (a1) to (a3), and an ArF excimer laser or KrF excimer laser can be used. A plurality of conventionally known structural units used for resistive resins such as shots (preferably for ArF excimer lasers).

結構單位(a4),例如以含有非酸解離性之脂肪族多環式基之丙烯酸酯所衍生之結構單位等為佳。該多環式基,例如,可例示與前述之結構單位(a1)之情形所例示者為相同之內容,其可使用ArF準分子雷射用、KrF準分子雷射用(較佳為ArF準分子雷射用)等之光阻組成物的樹脂成份所使用之以往已知之多數之結構單位。The structural unit (a4) is preferably, for example, a structural unit derived from an acrylate having a non-acid dissociable aliphatic polycyclic group. The polycyclic group may be, for example, the same as those exemplified in the case of the structural unit (a1) described above, and may be used for ArF excimer laser or KrF excimer laser (preferably ArF A conventionally known structural unit used for the resin component of a photoresist composition such as a molecular laser.

特別是由三環癸基、金剛烷基、四烷十二烷基、異菠烷基、原菠烷基所選出之至少1種時,就工業上容易取得等觀點而言為較佳。該些多環式基,可具有碳數1~5之直鏈狀或分支鏈狀之烷基作為取代基。In particular, when at least one selected from the group consisting of a tricyclic fluorenyl group, an adamantyl group, a tetradecanedecyl group, an iso-spinyl group, and a linalyl group is preferable, it is preferable from the viewpoint of industrial availability. These polycyclic groups may have a linear or branched alkyl group having 1 to 5 carbon atoms as a substituent.

結構單位(a4),具體而言,例如,可例示如下述通式(a4-1)~(a4-5)之構造者。Specific examples of the structural unit (a4) include those of the following general formulae (a4-1) to (a4-5).

[式中,R與前述為相同之內容][where R is the same as the above]

(A1)成份中含有該結構單位(a4)之情形,結構單位(a4)之比例,相對於構成(A1)成份之全結構單位之合計,以1~30莫耳%為佳,以10~20莫耳%為更佳。(A1) In the case where the component (a4) is contained in the component, the ratio of the structural unit (a4) is preferably 1 to 30 mol%, and 10 to 10% of the total structural unit constituting the component (A1). 20% of the mole is better.

(A1)成份,以具有結構單位(a0-1),及(a0-2)之共聚物為佳。該共聚物,例如,由上述結構單位(a-1)、(a0-2),及(a1)所形成之共聚物、結構單位(a0-1)、(a0-2),及(a3)所形成之共聚物、結構單位(a0-1)、(a0-2)、(a1)及(a3)所形成之共聚物、結構單位(a0-1)、(a0-2)、(a1)、(a2)及(a3)所形成之共聚物等。The component (A1) is preferably a copolymer having a structural unit (a0-1) and (a0-2). The copolymer, for example, a copolymer formed from the above structural units (a-1), (a0-2), and (a1), structural units (a0-1), (a0-2), and (a3) Copolymer formed, structural unit (a0-1), (a0-2), (a1) and (a3) copolymer, structural unit (a0-1), (a0-2), (a1) And a copolymer formed by (a2) and (a3).

本發明中,特別是該些共聚物中,結構單位(a1)以具有由前述通式(a1-0-12)所表示之結構單位及通式(a1-0-2)所表示之結構單位所成群所選擇之至少1種為佳。In the present invention, particularly in the copolymers, the structural unit (a1) has a structural unit represented by the above formula (a1-0-12) and a structural unit represented by the formula (a1-0-2) At least one selected from the group is preferred.

又,上述共聚物,如上所述般,以至少具有2種結構單位(a1)為佳,該至少2種之中,至少1種為,由前述通式(a1-0-12)所表示之結構單位及通式(a1-0-2)所表示之結構單位所成群中所選擇之結構單位為佳。Further, as described above, the copolymer preferably has at least two structural units (a1), and at least one of the at least two types is represented by the above formula (a1-0-12). The structural unit selected from the structural unit and the structural unit represented by the general formula (a1-0-2) is preferably selected.

(A1)成份之質量平均分子量(Mw)(凝膠滲透色層分析法之聚苯乙烯換算基準),並未有特別限定,以2000~50000為佳,以3000~30000為更佳,以5000~20000為最佳。小於該範圍之上限時,作為光阻使用時對光阻溶劑具有充分之溶解性,大於該範圍之下限時,可得到良好之耐乾蝕刻性或光阻圖型截面形狀。The mass average molecular weight (Mw) of the component (A1) (the polystyrene conversion standard of the gel permeation chromatography method) is not particularly limited, and is preferably 2,000 to 50,000, more preferably 3,000 to 30,000, and 5,000. ~20000 is the best. When it is less than the upper limit of the range, it has sufficient solubility to the resist solvent when used as a photoresist, and when it is larger than the lower limit of the range, a good dry etching resistance or a resist pattern cross-sectional shape can be obtained.

又分散度(Mw/Mn)以1.0~5.0為佳,以1.0~3.0為更佳,以1.2~2.5為最佳。又,Mn表示數平均分子量。Further, the degree of dispersion (Mw/Mn) is preferably 1.0 to 5.0, more preferably 1.0 to 3.0, and most preferably 1.2 to 2.5. Further, Mn represents a number average molecular weight.

(A)成份中,(A1)成份,可單獨使用1種,或將2種以上合併使用亦可。In the component (A), the component (A1) may be used singly or in combination of two or more.

2種以上合併使用之情形,可容易進行聚合物之合成,也可得到良好之微影蝕刻特性。此時,2種以上之(A1)成份,以具有相互不同之結構單位(a1)為佳。When two or more types are used in combination, the synthesis of the polymer can be easily performed, and good lithographic etching characteristics can be obtained. In this case, two or more (A1) components are preferably different from each other (a1).

又,該2種以上之(A1)成份之中,至少1種為,由前述通式(a1-0-12)所表示之結構單位及前述通式(a1-0-2)所表示之結構單位所成群中所選擇之至少1種為佳。Further, at least one of the two or more (A1) components is a structural unit represented by the above formula (a1-0-12) and a structure represented by the above formula (a1-0-2). It is preferred that at least one selected from the group is a group.

此時,該2種以上之(A1)成份所具有之相互不同之結構單位(a1),可僅由前述通式(a1-0-12)所表示之結構單位及前述通式(a1-0-2)所表示之結構單位所成群中所選擇者所構成亦可,或該些結構單位之至少1種,與不屬於該些內容之結構單位(a1)之組合亦可。In this case, the structural units (a1) which are different from each other in the two or more (A1) components may be the structural unit represented by the above formula (a1-0-12) and the above formula (a1-0). -2) The selected one of the structural units indicated may be formed, or at least one of the structural units may be combined with a structural unit (a1) not belonging to the content.

(A)成份中之(A1)成份之比例,相對於(A)成份之總質量,以25質量%以上為佳,以50質量%為較佳,以75質量%為更佳,亦可為100質量%。該比例為25質量%以上時,可提高微影蝕刻特性等之効果。The ratio of the component (A1) in the component (A) is preferably 25% by mass or more based on the total mass of the component (A), preferably 50% by mass, more preferably 75% by mass, or more preferably 100% by mass. When the ratio is 25% by mass or more, the effect of the lithographic etching characteristics and the like can be improved.

(A1)成份,可將衍生各結構單位之單體,例如藉由使用偶氮二異丁腈(AIBN)等自由基聚合起始劑依公知之自由基聚合等進行聚合予以製得。The component (A1) can be obtained by polymerizing a monomer derived from each structural unit, for example, by radical polymerization or the like using a radical polymerization initiator such as azobisisobutyronitrile (AIBN).

又,(A1)成份中,於上述聚合之際,例如可併用HS-CH2 -CH2 -CH2 -C(CF3 )2 -OH等鏈移轉劑,於末端導入-C(CF3 )2 -OH基。如此,烷基之氫原子的一部份導入有氟原子所取代之羥烷基所得之共聚物時,可有效降低顯影缺陷,或LER(線路邊緣凹凸:線路側壁具有不均勻的凹凸)。And, (A1) component in the occasion of the above-described polymerization, for example, may be used in HS-CH 2 -CH 2 -CH 2 -C (CF 3) 2 -OH chain transfer agent and the like, at the end introduced -C (CF 3 ) 2 -OH group. When a copolymer obtained by introducing a hydroxyalkyl group substituted with a fluorine atom into a part of a hydrogen atom of an alkyl group, the development defect or the LER (line edge unevenness: unevenness of the line side wall) can be effectively reduced.

各結構單位所衍生之單體,可使用市售之物質,或利用公知之方法合成亦可。The monomer derived from each structural unit may be a commercially available one or may be synthesized by a known method.

例如衍生結構單位(a0-1)之單體,例如下述通式(I)所表示之化合物(以下,亦稱為化合物(I))。For example, a monomer derived from the structural unit (a0-1) is, for example, a compound represented by the following formula (I) (hereinafter also referred to as a compound (I)).

[式(I)中,R1 ~R3 分別與前述為相同之內容]。[In the formula (I), R 1 to R 3 are each the same as described above].

該化合物(I)之製造方法並未有特別限定,其可利用公知之方法製造。例如,於鹼之存在下,於下述通式(X-1)所表示之化合物(X-1)溶解於反應溶劑所得之溶液中,添加下述通式(X-2)所表示之化合物(X-2),使其進行反應結果,得上述化合物(I)。The method for producing the compound (I) is not particularly limited, and it can be produced by a known method. For example, a compound represented by the following formula (X-2) is added to a solution obtained by dissolving the compound (X-1) represented by the following formula (X-1) in a reaction solvent in the presence of a base. (X-2), the result of the reaction was carried out to obtain the above compound (I).

鹼,例如氫化鈉、K2 CO3 、Cs2 CO3 等之無機鹼;三乙胺、4-二甲基胺基吡啶(DMAP)、吡啶等之有機鹼等。縮合劑,例如乙基二異丙基胺基碳二醯亞胺(EDCI)鹽酸鹽、二環己基羧醯亞胺(DCC)、二異丙基碳二醯亞胺、碳二咪唑等之碳二醯亞胺試劑或四乙基焦磷酸鹽、苯併三唑-N-羥基三二甲基胺基鏻六氟磷化物鹽(Bop試劑)等。A base such as an inorganic base such as sodium hydride, K 2 CO 3 or Cs 2 CO 3 ; an organic base such as triethylamine, 4-dimethylaminopyridine (DMAP) or pyridine. a condensing agent such as ethyldiisopropylaminocarbodiimide (EDCI) hydrochloride, dicyclohexylcarboximine (DCC), diisopropylcarbodiimide, carbodiimidazole or the like A carbodiimide reagent or a tetraethyl pyrophosphate, a benzotriazole-N-hydroxytrimethylamine sulfonium hexafluorophosphide salt (Bop reagent) or the like.

又,必要時也可以使用酸。酸,可使用脫水縮合等通常所使用之物質,具體而言,例如鹽酸、硫酸、磷酸等之無機酸類,或甲烷磺酸、三氟甲烷磺酸、苯磺酸、p-甲苯磺酸等之有機酸類等。該些可單獨使用亦可,或將2種類以上組合使用亦可。Also, acid can be used if necessary. As the acid, a substance which is usually used, such as dehydration condensation, can be used. Specifically, for example, an inorganic acid such as hydrochloric acid, sulfuric acid or phosphoric acid, or methanesulfonic acid, trifluoromethanesulfonic acid, benzenesulfonic acid or p-toluenesulfonic acid or the like. Organic acids, etc. These may be used singly or in combination of two or more types.

本發明之光阻組成物中,(A)成份,可含有不屬於前述(A1)成份,經由酸之作用而增大對鹼顯影液之溶解性的基材成份(以下,亦稱為(A2)成份)。In the resist composition of the present invention, the component (A) may contain a substrate component which does not belong to the above (A1) component and which increases the solubility to the alkali developer via the action of an acid (hereinafter, also referred to as (A2). ) ingredients).

(A2)成份,並未有特別限定,其可任意地選擇使用作為化學増幅型正型光阻組成物用之基材成份的以往已知之多數成份(例如ArF準分子雷射用、KrF準分子雷射用(較佳為ArF準分子雷射用)等之基礎樹脂)。例如ArF準分子雷射用之基礎樹脂,為具有前述結構單位(a1)為必要之結構單位,再具有任意之前述結構單位(a2)~(a4)的樹脂。The component (A2) is not particularly limited, and any of the conventionally known components (for example, ArF excimer laser, KrF excimer) which are used as a substrate component for a chemical smectic positive photoresist composition can be arbitrarily selected and used. A base resin for lasers (preferably for ArF excimer lasers). For example, the base resin for the ArF excimer laser is a resin having the structural unit (a1) as a necessary structural unit and having any of the above structural units (a2) to (a4).

(A2)成份,可單獨使用1種亦可,或將2種以上組合使用亦可。The component (A2) may be used singly or in combination of two or more.

本發明之光阻組成物中,(A)成份之含量,可配合所欲形成之光阻膜厚度等作調整即可。In the photoresist composition of the present invention, the content of the component (A) may be adjusted in accordance with the thickness of the photoresist film to be formed.

<(B)成份><(B) ingredients>

(B)成份,並未有特別限定,其可使用目前為止被提案作為化學増幅型光阻用之酸產生劑的成份。該些酸產生劑,目前為止,已知例如碘鎓鹽或鋶鹽等之鎓鹽系酸產生劑、肟磺酸酯系酸產生劑、雙烷基或雙芳基磺醯基重氮甲烷類、聚(雙磺醯基)重氮甲烷類等之重氮甲烷系酸產生劑、硝基苄磺酸酯系酸產生劑、亞胺基磺酸酯系酸產生劑、二碸系酸產生劑等多種成份。The component (B) is not particularly limited, and a component which has been proposed so far as an acid generator for a chemical smear type resist can be used. These acid generators have heretofore been known as sulfonium acid generators such as iodonium salts or phosphonium salts, sulfonate acid generators, dialkyl or bisarylsulfonyldiazomethanes. , a diazomethane acid generator such as poly(disulfonyl)diazomethane, a nitrobenzylsulfonate acid generator, an imidosulfonate acid generator, a diterpene acid generator And many other ingredients.

鎓鹽系酸產生劑,例如可使用下述通式(b-1)或(b-2)所表示之化合物。As the onium salt acid generator, for example, a compound represented by the following formula (b-1) or (b-2) can be used.

[式中,R1 ”~R3 ”R5 ”~R6 ”,分別獨立表示芳基或烷基;式(b-1)中之R1 ”~R3 ”中,任意2個可相互鍵結,並與式中之硫原子共同形成環亦可;R4 ”,表示可具有取代基之烷基、鹵化烷基、芳基,或烯基;R1 ”~R3 ”中之至少1個表示芳基,R5 ”~R6 ”中之至少1個表示芳基]。[wherein R 1 " to R 3 "R 5 " to R 6 " each independently represent an aryl group or an alkyl group; and in the formula (b-1), any of R 1 " to R 3 "" may mutually Bonding and forming a ring together with a sulfur atom in the formula; R 4 ", representing an alkyl group, a halogenated alkyl group, an aryl group or an alkenyl group which may have a substituent; at least one of R 1 " to R 3 " One represents an aryl group, and at least one of R 5 ' to R 6 ' represents an aryl group].

式(b-1)中,R1 ”~R3 ”分別獨立表示芳基或烷基。又,式(b-1)中之R1 ”~R3 ”中,任意2個可相互鍵結,並與式中之硫原子共同形成環亦可。In the formula (b-1), R 1 " to R 3 " each independently represent an aryl group or an alkyl group. Further, of R 1 ' to R 3 ' in the formula (b-1), any two of them may be bonded to each other and may form a ring together with the sulfur atom in the formula.

又,R1 ”~R3 ”中,至少1個表示芳基。R1 ”~R3 ”中,以2個以上為芳基為佳,R1 ”~R3 ”之全部為芳基為最佳。Further, at least one of R 1 " to R 3 " represents an aryl group. In R 1 ' to R 3 ', two or more aryl groups are preferred, and all of R 1 '-R 3 ' are aryl groups.

R1 ”~R3 ”之芳基,並未有特別限定,例如,為碳數6~20之芳基,且該芳基之氫原子的一部份或全部可被烷基、烷氧基、鹵素原子、羥基等所取代亦可,未被取代亦可。The aryl group of R 1 " to R 3 " is not particularly limited, and is, for example, an aryl group having 6 to 20 carbon atoms, and a part or the whole of the hydrogen atom of the aryl group may be an alkyl group or an alkoxy group. The halogen atom, the hydroxyl group, and the like may be substituted, and may be unsubstituted.

芳基,就可廉價合成等觀點,以碳數6~10之芳基為佳。具體而言,例如苯基、萘基等。The aryl group is preferably an inexpensive aryl group, and an aryl group having 6 to 10 carbon atoms is preferred. Specifically, for example, a phenyl group, a naphthyl group or the like.

可取代前述芳基之氫原子的烷基,例如以碳數1~5之烷基為佳,以甲基、乙基.、丙基、n-丁基、tert-丁基為最佳。The alkyl group which may substitute the hydrogen atom of the above aryl group is preferably an alkyl group having 1 to 5 carbon atoms, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.

可取代前述芳基之氫原子的烷氧基,例如以碳數1~5之烷氧基為佳,以甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基為佳,以甲氧基、乙氧基為最佳。An alkoxy group which may be substituted for the hydrogen atom of the above aryl group, for example, an alkoxy group having 1 to 5 carbon atoms, preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, or an n- Butoxy and tert-butoxy are preferred, and methoxy and ethoxy are preferred.

可取代前述芳基之氫原子的鹵素原子,例如,以氟原子為佳。A halogen atom which may be substituted for the hydrogen atom of the aforementioned aryl group, for example, a fluorine atom is preferred.

R1 ”~R3 ”之烷基,並未有特別限制,例如碳數1~10之直鏈狀、分支鏈狀或環狀之烷基等。就具有優良解析性等觀點,以碳數1~5為佳。具體而言,例如甲基、乙基、n-丙基、異丙基、n-丁基、異丁基、n-戊基、環戊基、己基、環己基、壬基、癸基等,就具有優良解析性,且可廉價合成等觀點,例如甲基等。The alkyl group of R 1 " to R 3 " is not particularly limited, and examples thereof include a linear one having a carbon number of 1 to 10, a branched chain or a cyclic alkyl group. From the viewpoints of excellent resolution and the like, the carbon number is preferably from 1 to 5. Specifically, for example, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, n-pentyl, cyclopentyl, hexyl, cyclohexyl, decyl, decyl, and the like, It has excellent analytical properties and can be synthesized inexpensively, such as a methyl group.

式(b-1)中之R1 ”~R3 ”中,任意2個可相互鍵結並與式中之硫原子共同形成環之情形,以包含硫原子形成3~10員環者為佳,以形成5~7員環為特佳。In the case of R 1 ′′ to R 3 ′ in the formula (b-1), any two of them may be bonded to each other and form a ring together with the sulfur atom in the formula, and it is preferred to form a ring of 3 to 10 members including a sulfur atom. It is especially good to form a 5- to 5-member ring.

式(b-1)中之R1 ”~R3 ”中,任意2個可相互鍵結並與式中之硫原子共同形成環之情形,剩餘之1個,以芳基為佳。前述芳基為與前述R1 ”~R3 ”之芳基為相同之內容。In the case of R 1 " to R 3 " in the formula (b-1), any two of them may be bonded to each other and form a ring together with the sulfur atom in the formula, and the remaining one is preferably an aryl group. The above aryl group is the same as the above aryl group of R 1 " to R 3 ".

式(b-1)所表示之化合物之陽離子部中,較佳者例如,下述式(I-1-1)~(I-1-10)所表示之陽離子部等。其中又以,式(I-1-1)~(I-1-8)所表示之陽離子部等之具有三苯甲烷骨架者為佳。Among the cation portions of the compound represented by the formula (b-1), for example, a cation moiety represented by the following formulas (I-1-1) to (I-1-10) is preferable. Among them, those having a triphenylmethane skeleton such as a cation portion represented by the formulae (I-1-1) to (I-1-8) are preferred.

下述式(I-1-9)~(I-1-10)中,R9 、R10 ,分別為獨立之可具有取代基之苯基、萘基或碳數1~5之烷基、烷氧基、羥基。In the following formulas (I-1-9) to (I-1-10), R 9 and R 10 each independently represent a phenyl group, a naphthyl group or an alkyl group having 1 to 5 carbon atoms which may have a substituent. Alkoxy group, hydroxyl group.

u為1~3之整數,以1或2為最佳。u is an integer from 1 to 3, and 1 or 2 is optimal.

R4 ”,表示可具有取代基之烷基、鹵化烷基、芳基,或烯基。R 4 "" represents an alkyl group, a halogenated alkyl group, an aryl group or an alkenyl group which may have a substituent.

R4 ”中之烷基,可為直鏈狀、分支鏈狀、環狀中任一者皆可。The alkyl group in R 4 " may be any of a linear chain, a branched chain, and a cyclic group.

前述直鏈狀或分支鏈狀之烷基,例如以碳數1~10為佳,以碳數1~8為較佳,以碳數1~4為最佳。The linear or branched alkyl group is preferably a carbon number of 1 to 10, preferably a carbon number of 1 to 8, and preferably a carbon number of 1 to 4.

前述環狀之烷基,例如以碳數4~15為佳,以碳數4~10為更佳,以碳數6~10為最佳。The cyclic alkyl group is preferably, for example, 4 to 15 carbon atoms, more preferably 4 to 10 carbon atoms, and most preferably 6 to 10 carbon atoms.

R4 ”中之鹵化烷基,例如前述直鏈狀、分支鏈狀或環狀之烷基之氫原子的一部份或全部被鹵素原子所取代之基等。該鹵素原子,例如,氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。a halogenated alkyl group in R 4 ", for example, a group in which a part or all of a hydrogen atom of the above-mentioned linear, branched or cyclic alkyl group is substituted by a halogen atom, etc. The halogen atom, for example, a fluorine atom A chlorine atom, a bromine atom, an iodine atom or the like is preferably a fluorine atom.

鹵化烷基中,相對於該鹵化烷基所含之鹵素原子及氫原子之合計數,鹵素原子數之比例(鹵化率(%)),以10~100%為佳,以50~100%為更佳,以100%為最佳。該鹵化率越高時,以酸之強度越強而為更佳。In the halogenated alkyl group, the ratio of the number of halogen atoms (halogenation ratio (%)) to the total number of halogen atoms and hydrogen atoms contained in the halogenated alkyl group is preferably from 10 to 100%, and from 50 to 100%. Better, 100% is the best. When the halogenation rate is higher, the stronger the strength of the acid, the more preferable.

前述R4 ”中之芳基,以碳數6~20之芳基為佳。The aryl group in the above R 4 " is preferably an aryl group having 6 to 20 carbon atoms.

前述R4 ”中之烯基,以碳數2~10之烯基為佳。The alkenyl group in the above R 4 " is preferably an alkenyl group having 2 to 10 carbon atoms.

前述R4 ”中,「可具有取代基」係指,前述直鏈狀、分支鏈狀或環狀之烷基、鹵化烷基、芳基,或烯基中氫原子之一部份或全部取代基(氫原子以外之其他原子或基)可被取代之意。In the above R 4 "", "may have a substituent" means that a part or all of a hydrogen atom in a linear, branched or cyclic alkyl group, a halogenated alkyl group, an aryl group or an alkenyl group is substituted. A group (an atom other than a hydrogen atom or a group) may be substituted.

R4 ”中取代基之數可為1個,或2個以上亦可。The number of substituents in R 4 " may be one, or two or more.

前述取代基,例如,鹵素原子、雜原子、烷基、式:X-Q1 -[式中,Q1 為含有氧原子之2價之鍵結基,X為可具有取代基之碳數3~30之烴基]所表示之基等。The above substituent, for example, a halogen atom, a hetero atom, an alkyl group, a formula: XQ 1 - [wherein, Q 1 is a divalent bond group containing an oxygen atom, and X is a carbon number of 3 to 30 which may have a substituent. The base represented by the hydrocarbon group].

前述鹵素原子、烷基,為與R4 ”中,鹵化烷基中之鹵素原子、烷基所列舉者為相同之內容。The halogen atom or the alkyl group is the same as those exemplified in the halogen atom and the alkyl group in the halogenated alkyl group in R 4 '.

前述雜原子,例如氧原子、氮原子、硫原子等。The aforementioned hetero atom is, for example, an oxygen atom, a nitrogen atom, a sulfur atom or the like.

X-Q1 -所表示之基中,Q1 為含有氧原子之2價之鍵結基。In the group represented by XQ 1 -, Q 1 is a divalent bond group containing an oxygen atom.

Q1 ,可含有氧原子以外之原子。氧原子以外之原子,例如碳原子、氫原子、氧原子、硫原子、氮原子等。Q 1 may contain atoms other than oxygen atoms. An atom other than an oxygen atom, such as a carbon atom, a hydrogen atom, an oxygen atom, a sulfur atom, a nitrogen atom or the like.

含有氧原子之2價之鍵結基,例如,氧原子(醚鍵結;-O-)、酯鍵結(-C(=O)-O-)、醯胺鍵結(-C(=O)-NH-)、羰基(-C(=O)-)、碳酸酯鍵結(-O-C(=O)-O-)等之非烴系之含氧原子的鍵結基;該非烴系之含氧原子的鍵結基與伸烷基之組合等。a divalent bond group containing an oxygen atom, for example, an oxygen atom (ether bond; -O-), an ester bond (-C(=O)-O-), a guanamine bond (-C(=O) a non-hydrocarbon oxygen atom-containing bond group such as -NH-), a carbonyl group (-C(=O)-), a carbonate bond (-OC(=O)-O-), etc.; A combination of a bond group containing an oxygen atom and an alkyl group.

該組合,例如,-R91 -O-、-R92 -O-C(=O)-、-C(=O)-O-R93 -O-C(=O)-(式中,R91 ~R93 為分別獨立之伸烷基)等。The combination is, for example, -R 91 -O-, -R 92 -OC(=O)-, -C(=O)-OR 93 -OC(=O)- (wherein, R 91 to R 93 are respectively Independent alkyl group) and the like.

R91 ~R93 中之伸烷基,以直鏈狀或分支鏈狀之伸烷基為佳,該伸烷基之碳數,以1~12為佳,以1~5為更佳,以1~3為特佳。The alkylene group in R 91 to R 93 is preferably a linear or branched alkyl group, and the carbon number of the alkyl group is preferably from 1 to 12, more preferably from 1 to 5. 1 to 3 is especially good.

該伸烷基,具體而言,例如,伸甲基[-CH2 -];-CH(CH3 )-、-CH(CH2 CH3 )-、-C(CH3 )2 -、-C(CH3 )(CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH3 )-、-C(CH2 CH3 )2 -等之烷基伸甲基;伸乙基[-CH2 CH2 -];-CH(CH3 )CH2 -、-CH(CH3 )CH(CH3 )-、-C(CH3 )2 CH2 -、-CH(CH2 CH3 )CH2 -等之烷基伸乙基;伸三甲基(n-伸丙基)[-CH2 CH2 CH2 -];-CH(CH3 )CH2 CH2 -、-CH2 CH(CH3 )CH2 -等之烷基伸三甲基;伸四甲基[-CH2 CH2 CH2 CH2 -];-CH(CH3 )CH2 CH2 CH2 -、-CH2 CH(CH3 )CH2 CH2 -等之烷基伸四甲基;伸五甲基[-CH2 CH2 CH2 CH2 CH2 -]等。The alkylene group, specifically, for example, methyl [-CH 2 -]; -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C(CH 3 ) 2 -, -C (CH 3 )(CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 3 )-, -C(CH 2 CH 3 ) 2 - or the like alkyl-extended methyl; ex-ethyl [- CH 2 CH 2 -]; -CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, -CH(CH 2 CH 3 )CH 2 -etc. Alkyl extended ethyl; extended trimethyl (n-propyl)[-CH 2 CH 2 CH 2 -]; -CH(CH 3 )CH 2 CH 2 -, -CH 2 CH(CH 3 ) CH 2 -etc. The alkyl group extends to trimethyl; tetramethyl [-CH 2 CH 2 CH 2 CH 2 -]; -CH(CH 3 )CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 ) The alkyl group of CH 2 CH 2 -etc. is tetramethyl; the pentamethyl group [-CH 2 CH 2 CH 2 CH 2 CH 2 -] and the like.

Q1 ,以含有酯鍵結或醚鍵結的2價之鍵結基為佳,其中又以,-R91 -O-、-R92 -O-C(=O)-或-C(=O)-O-R93 -O-C(=O)-為佳。Q 1 , preferably a divalent bond group containing an ester bond or an ether bond, wherein -R 91 -O-, -R 92 -OC(=O)- or -C(=O) -OR 93 -OC(=O)- is preferred.

X-Q1 -所表示之基中,X之烴基,可為芳香族烴基亦可,脂肪族烴基亦可。In the group represented by XQ 1 -, the hydrocarbon group of X may be an aromatic hydrocarbon group or an aliphatic hydrocarbon group.

芳香族烴基為具有芳香環之烴基。該芳香族烴基之碳數以3~30為佳,以5~30為較佳,以5~20為更佳,以6~15為特佳,以6~12為最佳。其中,該碳數為不含取代基中之碳數者。The aromatic hydrocarbon group is a hydrocarbon group having an aromatic ring. The aromatic hydrocarbon group preferably has 3 to 30 carbon atoms, more preferably 5 to 30 carbon atoms, more preferably 5 to 20 carbon atoms, most preferably 6 to 15 carbon atoms, and most preferably 6 to 12 carbon atoms. Wherein, the carbon number is those which do not contain the carbon number in the substituent.

芳香族烴基,具體而言,例如,苯基、聯苯基(biphenyl)、芴基(fluorenyl)、萘基、蒽基(anthryl)、菲基等之由芳香族烴環去除1個氫原子所得之芳基、苄基、苯乙基、1-萘甲基、2-萘甲基、1-萘乙基、2-萘乙基等之芳烷基等。前述芳烷基中之烷基鏈之碳數,以1~4為佳,以1~2為更佳,以1為特佳。The aromatic hydrocarbon group, specifically, for example, a phenyl group, a biphenyl group, a fluorenyl group, a naphthyl group, an anthyl group, a phenanthryl group or the like is obtained by removing one hydrogen atom from an aromatic hydrocarbon ring. An aralkyl group such as an aryl group, a benzyl group, a phenethyl group, a 1-naphthylmethyl group, a 2-naphthylmethyl group, a 1-naphthylethyl group or a 2-naphthylethyl group. The number of carbon atoms of the alkyl chain in the above aralkyl group is preferably from 1 to 4, more preferably from 1 to 2, most preferably from 1.

該芳香族烴基,可具有取代基。例如該芳香族烴基所具有之構成芳香環之碳原子的一部份可被雜原子所取代亦可、該芳香族烴基所具有之鍵結芳香環之氫原子可被取代基所取代亦可。The aromatic hydrocarbon group may have a substituent. For example, a part of the carbon atom constituting the aromatic ring which the aromatic hydrocarbon group has may be substituted by a hetero atom, or a hydrogen atom to which the aromatic ring group has a bonded aromatic ring may be substituted by a substituent.

前者之例如,前述構成芳基之環的碳原子之一部份被氧原子、硫原子、氮原子等之雜原子所取代之雜芳基、前述芳烷基中構成芳香族烴環之碳原子的一部份被前述雜原子所取代之雜芳烷基等。In the former, for example, the heteroaryl group in which one of the carbon atoms constituting the ring of the aryl group is substituted with a hetero atom such as an oxygen atom, a sulfur atom or a nitrogen atom, and the carbon atom constituting the aromatic hydrocarbon ring in the aforementioned aralkyl group. A heteroarylalkyl group or the like partially substituted by the aforementioned hetero atom.

後者之例示中之芳香族烴基的取代基,例如,烷基、烷氧基、鹵素原子、鹵化烷基、羥基、氧原子(=O)等。The substituent of the aromatic hydrocarbon group in the latter exemplified is, for example, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, an oxygen atom (=O) or the like.

前述芳香族烴基之作為取代基之烷基,例如以碳數1~5之烷基為佳,以甲基、乙基、丙基、n-丁基、tert-丁基為最佳。The alkyl group as a substituent of the aromatic hydrocarbon group is preferably, for example, an alkyl group having 1 to 5 carbon atoms, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.

前述芳香族烴基之作為取代基之烷氧基,例如以碳數1~5之烷氧基為佳,以甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基為佳,以甲氧基、乙氧基為最佳。The alkoxy group as a substituent of the above aromatic hydrocarbon group is preferably, for example, an alkoxy group having 1 to 5 carbon atoms, and a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, and an n- group. Butoxy and tert-butoxy are preferred, and methoxy and ethoxy are preferred.

前述芳香族烴基之作為取代基之鹵素原子,例如,氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。The halogen atom as a substituent of the aromatic hydrocarbon group, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or the like, is preferably a fluorine atom.

前述芳香族烴基之作為取代基之鹵化烷基,例如前述烷基之氫原子的一部份或全部被前述鹵素原子所取代之基等。The halogenated alkyl group as a substituent of the aromatic hydrocarbon group is, for example, a group in which a part or all of a hydrogen atom of the alkyl group is substituted by the halogen atom.

X中之脂肪族烴基,可為飽和脂肪族烴基亦可、不飽和脂肪族烴基亦可。又,脂肪族烴基,可為直鏈狀、分支鏈狀、環狀中任一者皆可。The aliphatic hydrocarbon group in X may be a saturated aliphatic hydrocarbon group or an unsaturated aliphatic hydrocarbon group. Further, the aliphatic hydrocarbon group may be any of a linear chain, a branched chain, and a cyclic group.

X中,脂肪族烴基中,構成該脂肪族烴基之碳原子的一部份可被含有雜原子之取代基所取代亦可、構成該脂肪族烴基之氫原子的一部份或全部可被含有雜原子之取代基所取代亦可。In X, in the aliphatic hydrocarbon group, a part of the carbon atom constituting the aliphatic hydrocarbon group may be substituted by a substituent containing a hetero atom, or a part or all of the hydrogen atom constituting the aliphatic hydrocarbon group may be contained. Substituents for heteroatoms can also be substituted.

X中之「雜原子」,例如只要為碳原子及氫原子以外之原子時,則無特別限定,例如鹵素原子、氧原子、硫原子、氮原子等。鹵素原子,例如,氟原子、氯原子、碘原子、溴原子等。The "hetero atom" in X is not particularly limited as long as it is an atom other than a carbon atom or a hydrogen atom, and examples thereof include a halogen atom, an oxygen atom, a sulfur atom, and a nitrogen atom. A halogen atom, for example, a fluorine atom, a chlorine atom, an iodine atom, a bromine atom or the like.

含有雜原子之取代基,可僅由前述雜原子所構成者亦可,或含有前述雜原子以外之基或原子之基亦可。The substituent containing a hetero atom may be composed only of the above-mentioned hetero atom, or may contain a group other than the above hetero atom or an atom.

可取代一部份碳原子之取代基,具體而言,例如,-O-、-C(=O)-O-、-C(=O)-、-O-C(=O)-O-、-C(=O)-NH-、-NH-(H可被烷基、醯基等取代基所取代)、-S-、-S(=O)2 -、-S(=O)2 -O-等。脂肪族烴基為環狀之情形,該些取代基可包含於環構造中。Substituents which may replace a part of carbon atoms, specifically, for example, -O-, -C(=O)-O-, -C(=O)-, -OC(=O)-O-, - C(=O)-NH-, -NH- (H can be substituted by a substituent such as an alkyl group or a fluorenyl group), -S-, -S(=O) 2 -, -S(=O) 2 -O -Wait. Where the aliphatic hydrocarbon group is cyclic, the substituents may be included in the ring configuration.

取代一部份或全部氫原子之取代基,具體而言,例如,烷氧基、鹵素原子、鹵化烷基、羥基、氧原子(=O)、氰基等。A substituent which substitutes a part or all of a hydrogen atom, specifically, for example, an alkoxy group, a halogen atom, an alkyl halide group, a hydroxyl group, an oxygen atom (=O), a cyano group or the like.

前述烷氧基,例如以碳數1~5之烷氧基為佳,以甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基為佳,以甲氧基、乙氧基為最佳。The alkoxy group is preferably an alkoxy group having 1 to 5 carbon atoms, and a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group, and a tert-butoxy group. The base is preferred, and the methoxy group and the ethoxy group are the most preferable.

前述鹵素原子,例如,氟原子、氯原子、溴原子、碘原子等,又以氟原子為佳。The halogen atom, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or the like, is preferably a fluorine atom.

前述鹵化烷基,例如碳數1~5之烷基,例如甲基、乙基、丙基、n-丁基、tert-丁基等之烷基中之氫原子的一部份或全部被前述鹵素原子所取代之基等。The halogenated alkyl group, for example, an alkyl group having 1 to 5 carbon atoms, such as a part or all of hydrogen atoms in an alkyl group such as a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group, is A group substituted by a halogen atom or the like.

脂肪族烴基,以直鏈狀或分支鏈狀之飽和烴基、直鏈狀或分支鏈狀之1價不飽和烴基,或環狀之脂肪族烴基(脂肪族環式基)為佳。The aliphatic hydrocarbon group is preferably a linear or branched saturated hydrocarbon group, a linear or branched monovalent unsaturated hydrocarbon group, or a cyclic aliphatic hydrocarbon group (aliphatic cyclic group).

直鏈狀之飽和烴基(烷基),例如碳數以1~20為佳,以1~15為更佳,以1~10為最佳。具體而言,例如,甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、異十三烷基、十四烷基、十五烷基、十六烷基、異十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、二十一烷基、二十二烷基等。The linear saturated hydrocarbon group (alkyl group) has, for example, preferably 1 to 20 carbon atoms, more preferably 1 to 15 carbon atoms, and most preferably 1 to 10 carbon atoms. Specifically, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, decyl, decyl, undecyl, dodecyl, tridecyl, Isotridecyl, tetradecyl, pentadecyl, hexadecyl, isohexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, twenty-one Alkyl, behenyl or the like.

分支鏈狀之飽和烴基(烷基),以碳數為3~20為佳,以3~15為更佳,以3~10為最佳。具體而言,例如,1-甲基乙基、1-甲基丙基、2-甲基丙基、1-甲基丁基、2-甲基丁基、3-甲基丁基、1-乙基丁基、2-乙基丁基、1-甲基戊基、2-甲基戊基、3-甲基戊基、4-甲基戊基等。The branched saturated hydrocarbon group (alkyl group) preferably has 3 to 20 carbon atoms, more preferably 3 to 15 carbon atoms, and most preferably 3 to 10 carbon atoms. Specifically, for example, 1-methylethyl, 1-methylpropyl, 2-methylpropyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1- Ethyl butyl, 2-ethylbutyl, 1-methylpentyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, and the like.

不飽和烴基,例如碳數以2~10為佳,以2~5為佳,以2~4為佳,以3為特佳。直鏈狀之1價之不飽和烴基,例如,乙烯基、丙烯基(烯丙基)、丁烯基等。分支鏈狀之1價之不飽和烴基,例如,1-甲基丙烯基、2-甲基丙烯基等。The unsaturated hydrocarbon group has, for example, preferably 2 to 10 carbon atoms, preferably 2 to 5 carbon atoms, preferably 2 to 4 carbon atoms, and particularly preferably 3 carbon atoms. A linear monovalent unsaturated hydrocarbon group, for example, a vinyl group, a propenyl group, a butenyl group or the like. A branched monovalent unsaturated hydrocarbon group, for example, a 1-methylpropenyl group, a 2-methylpropenyl group or the like.

不飽和烴基,於上述之中,又特別是以丙烯基為佳。The unsaturated hydrocarbon group is preferably a propylene group among the above.

脂肪族環式基,可為單環式基亦可、多環式基亦可。其碳數以3~30為佳,以5~30為較佳,以5~20為更佳,以6~15為特佳,以6~12為最佳。The aliphatic cyclic group may be a monocyclic group or a polycyclic group. The carbon number is preferably from 3 to 30, preferably from 5 to 30, more preferably from 5 to 20, most preferably from 6 to 15, and most preferably from 6 to 12.

具體而言,例如,單環鏈烷去除1個以上之氫原子所得之基;二環鏈烷、三環鏈烷、四環鏈烷等之多環鏈烷去除1個以上之氫原子所得之基等。更具體而言,例如環戊烷、環己烷等之單環鏈烷去除1個以上之氫原子所得之基;金剛烷、原菠烷、異菠烷、三環癸烷、四環十二烷等多環鏈烷去除1個以上之氫原子所得之基等。Specifically, for example, a monocyclic alkane is obtained by removing one or more hydrogen atoms; and a polycyclic alkane such as a bicycloalkane, a tricycloalkane or a tetracycloalkane is removed by removing one or more hydrogen atoms. Base. More specifically, a monocyclic alkane such as cyclopentane or cyclohexane is obtained by removing one or more hydrogen atoms; adamantane, raw spinel, iso-araconine, tricyclodecane, tetracyclic twelve A group obtained by removing one or more hydrogen atoms from a polycyclic alkane such as an alkane.

脂肪族環式基,其環構造中不含有含雜原子之取代基之情形,脂肪族環式基,以多環式基為佳,以多環鏈烷去除1個以上之氫原子所得之基為更佳,以金剛烷去除1個以上之氫原子所得之基為最佳。An aliphatic cyclic group having a ring structure which does not contain a substituent containing a hetero atom, an aliphatic cyclic group, preferably a polycyclic group, and a group obtained by removing one or more hydrogen atoms from a polycyclic alkane More preferably, the base obtained by removing one or more hydrogen atoms from adamantane is preferred.

脂肪族環式基,其環構造中含有含雜原子之取代基之基之情形,含有該雜原子之取代基,以-O-、-C(=O)-O-、-S-、-S(=O)2 -、-S(=O)2 -O-為佳。該脂肪族環式基之具體例,例如下述式(L1)~(L5)、(S1)~(S4)等。An aliphatic cyclic group having a ring structure containing a substituent of a hetero atom, and a substituent containing the hetero atom, -O-, -C(=O)-O-, -S-, - S(=O) 2 -, -S(=O) 2 -O- is preferred. Specific examples of the aliphatic cyclic group include, for example, the following formulae (L1) to (L5), (S1) to (S4), and the like.

[式中,Q”為碳數1~5之伸烷基、-O-、-S-、-O-R94 -或-S-R95 -,R94 及R95 分別獨立為碳數1~5之伸烷基,m為0或1之整數]。[wherein Q" is an alkylene group having 1 to 5 carbon atoms, -O-, -S-, -OR 94 - or -SR 95 -, and R 94 and R 95 are each independently a carbon number of 1 to 5 Alkyl, m is an integer of 0 or 1.

式中,Q”、R94 及R95 中之伸烷基,分別與前述R91 ~R93 中之伸烷基為相同之內容。In the formula, the alkylene group in Q", R 94 and R 95 is the same as the alkylene group in the above R 91 to R 93 , respectively.

該些脂肪族環式基,構成該環構造之碳原子所鍵結之氫原子的一部份可被取代基所取代。該取代基,例如烷基、烷氧基、鹵素原子、鹵化烷基、羥基、氧原子(=O)等。The aliphatic cyclic group, a part of the hydrogen atom bonded to the carbon atom constituting the ring structure may be substituted by a substituent. The substituent is, for example, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, an oxygen atom (=O) or the like.

前述烷基,例如以碳數1~5之烷基為佳,甲基、乙基、丙基、n-丁基、tert-丁基為特佳。The alkyl group is preferably an alkyl group having 1 to 5 carbon atoms, and particularly preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.

前述烷氧基、鹵素原子分別與前述取代一部份或全部氫原子之取代基所列舉之內容為相同之內容。The alkoxy group and the halogen atom are the same as those exemplified for the substituent of the above-mentioned partial or all hydrogen atom.

本發明中,X以可具有取代基之環式基為佳。該環式基,為可具有取代基之芳香族烴基亦可,可具有取代基之脂肪族環式基亦可,又以可具有取代基之脂肪族環式基為佳。In the present invention, X is preferably a cyclic group which may have a substituent. The cyclic group may be an aromatic hydrocarbon group which may have a substituent, an aliphatic cyclic group which may have a substituent, and an aliphatic cyclic group which may have a substituent.

前述芳香族烴基,以可具有取代基之萘基,或可具有取代基之苯基為佳。The aromatic hydrocarbon group is preferably a naphthyl group which may have a substituent or a phenyl group which may have a substituent.

可具有取代基之脂肪族環式基,以可具有取代基之多環式之脂肪族環式基為佳。該多環式之脂肪族環式基,以前述多環鏈烷去除1個以上之氫原子所得之基、前述(L2)~(L5)、(S3)~(S4)等為佳。The aliphatic cyclic group which may have a substituent is preferably a polycyclic aliphatic ring group which may have a substituent. The polycyclic aliphatic cyclic group is preferably a group obtained by removing one or more hydrogen atoms from the polycyclic alkane, and the above (L2) to (L5), (S3) to (S4), and the like.

本發明中,R4 ”,以具有取代基為X-Q1 -者為佳。此時,R4 ”以X-Q1 -Y1 -[式中,Q1 及X與前述為相同之內容,Y1 為可具有取代基之碳數1~4之伸烷基或可具有取代基之碳數1~4之氟化伸烷基]所表示之基為佳。In the present invention, R 4 ′ is preferably one having a substituent of XQ 1 −. In this case, R 4 ′ is XQ 1 —Y 1 —[wherein Q 1 and X are the same as described above, Y 1 The group represented by the alkylene group having 1 to 4 carbon atoms which may have a substituent or the fluorinated alkyl group having 1 to 4 carbon atoms which may have a substituent is preferred.

X-Q1 -Y1 -所表示之基中,Y1 之伸烷基,為與前述Q1 所列舉之伸烷基中,碳數1~4之基為相同之內容。In the group represented by XQ 1 -Y 1 -, the alkylene group of Y 1 is the same as the alkyl group having 1 to 4 carbon atoms in the alkylene group recited in the above Q 1 .

氟化伸烷基例如,該伸烷基之氫原子的一部份或全部被氟原子所取代之基等。The fluorinated alkyl group is, for example, a group in which a part or all of a hydrogen atom of the alkyl group is substituted by a fluorine atom.

Y1 ,具體而言,例如,-CF2 -、-CF2 CF2 -、-CF2 CF2 CF2 -、-CF(CF3 )CF2 -、-CF(CF2 CF3 )-、-C(CF3 )2 -、-CF2 CF2 CF2 CF2 -、-CF(CF3 )CF2 CF2 -、-CF2 CF(CF3 )CF2 -、-CF(CF3 )CF(CF3 )-、-C(CF3 )2 CF2 -、-CF(CF2 CF3 )CF2 -、-CF(CF2 CF2 CF3 )-、-C(CF3 )(CF2 CF3 )-;-CHF-、-CH2 CF2 -、-CH2 CH2 CF2 -、-CH2 CF2 CF2 -、-CH(CF3 )CH2 -、-CH(CF2 CF3 )-、-C(CH3 )(CF3 )-、-CH2 CH2 CH2 CF2 -、-CH2 CH2 CF2 CF2 -、-CH(CF3 )CH2 CH2 -、-CH2 CH(CF3 )CH2 -、-CH(CF3 )CH(CF3 )-、-C(CF3 )2 CH2 -;-CH2 -、-CH2 CH2 -、-CH2 CH2 CH2 -、-CH(CH3 )CH2 -、-CH(CH2 CH3 )-、-C(CH3 )2 -、-CH2 CH2 CH2 CH2 -、-CH(CH3 )CH2 CH2 -、-CH2 CH(CH3 )CH2 -、-CH(CH3 )CH(CH3 )-、-C(CH3 )2 CH2 -、-CH(CH2 CH3 )CH2 -、-CH(CH2 CH2 CH3 )-、-C(CH3 )(CH2 CH3 )-等。Y 1 , specifically, for example, -CF 2 -, -CF 2 CF 2 -, -CF 2 CF 2 CF 2 -, -CF(CF 3 )CF 2 -, -CF(CF 2 CF 3 )-, -C(CF 3 ) 2 -, -CF 2 CF 2 CF 2 CF 2 -, -CF(CF 3 )CF 2 CF 2 -, -CF 2 CF(CF 3 )CF 2 -, -CF(CF 3 ) CF(CF 3 )-, -C(CF 3 ) 2 CF 2 -, -CF(CF 2 CF 3 )CF 2 -, -CF(CF 2 CF 2 CF 3 )-, -C(CF 3 )(CF 2 CF 3 )-;-CHF-, -CH 2 CF 2 -, -CH 2 CH 2 CF 2 -, -CH 2 CF 2 CF 2 -, -CH(CF 3 )CH 2 -, -CH(CF 2 CF 3 )-, -C(CH 3 )(CF 3 )-, -CH 2 CH 2 CH 2 CF 2 -, -CH 2 CH 2 CF 2 CF 2 -, -CH(CF 3 )CH 2 CH 2 - , -CH 2 CH(CF 3 )CH 2 -, -CH(CF 3 )CH(CF 3 )-, -C(CF 3 ) 2 CH 2 -; -CH 2 -, -CH 2 CH 2 -, - CH 2 CH 2 CH 2 -, -CH(CH 3 )CH 2 -, -CH(CH 2 CH 3 )-, -C(CH 3 ) 2 -, -CH 2 CH 2 CH 2 CH 2 -, -CH (CH 3 )CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, -CH(CH 2 CH 3 )CH 2 -, -CH(CH 2 CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 3 )-, and the like.

Y1 ,以氟化伸烷基為佳,特別是鍵結於鄰接硫原子之碳原子經氟化所得之氟化伸烷基為佳。該些氟化伸烷基,例如-CF2 -、-CF2 CF2 -、-CF2 CF2 CF2 -、-CF(CF3 )CF2 -、-CF2 CF2 CF2 CF2 -、-CF(CF3 )CF2 CF2 -、-CF2 CF(CF3 )CF2 -、-CF(CF3 )CF(CF3 )-、-C(CF3 )2 CF2 -、-CF(CF2 CF3 )CF2 -;-CH2 CF2 -、-CH2 CH2 CF2 -、-CH2 CF2 CF2 -;-CH2 CH2 CH2 CF2 -、-CH2 CH2 CF2 CF2 -、-CH2 CF2 CF2 CF2 -等。Y 1 is preferably a fluorinated alkyl group, and particularly preferably a fluorinated alkyl group obtained by fluorinating a carbon atom adjacent to a sulfur atom. The fluorinated alkyl groups, such as -CF 2 -, -CF 2 CF 2 -, -CF 2 CF 2 CF 2 -, -CF(CF 3 )CF 2 -, -CF 2 CF 2 CF 2 CF 2 - , -CF(CF 3 )CF 2 CF 2 -, -CF 2 CF(CF 3 )CF 2 -, -CF(CF 3 )CF(CF 3 )-, -C(CF 3 ) 2 CF 2 -,- CF(CF 2 CF 3 )CF 2 -; -CH 2 CF 2 -, -CH 2 CH 2 CF 2 -, -CH 2 CF 2 CF 2 -; -CH 2 CH 2 CH 2 CF 2 -, -CH 2 CH 2 CF 2 CF 2 -, -CH 2 CF 2 CF 2 CF 2 -, and the like.

其中又以-CF2 -、-CF2 CF2 -、-CF2 CF2 CF2 -,或CH2 CF2 CF2 -為佳,以-CF2 -、-CF2 CF2 -或-CF2 CF2 CF2 -為更佳,-CF2 -為特佳。Wherein -CF 2 -, -CF 2 CF 2 -, -CF 2 CF 2 CF 2 -, or CH 2 CF 2 CF 2 - is preferred, with -CF 2 -, -CF 2 CF 2 - or -CF 2 CF 2 CF 2 - is more preferred, and -CF 2 - is particularly preferred.

前述伸烷基或氟化伸烷基,可具有取代基。伸烷基或氟化伸烷基為「具有取代基」係指,該伸烷基或氟化伸烷基中之氫原子或氟原子之一部份或全部可被氫原子及氟原子以外之原子或基所取代之意。The aforementioned alkylene or fluorinated alkyl group may have a substituent. The alkyl group or the fluorinated alkyl group has a "substituent group" means that a part or all of a hydrogen atom or a fluorine atom in the alkylene group or the fluorinated alkyl group may be other than a hydrogen atom and a fluorine atom. The meaning of replacing an atom or a base.

伸烷基或氟化伸烷基所可具有之取代基,例如碳數1~4之烷基、碳數1~4之烷氧基、羥基等。The substituent which the alkyl group or the fluorinated alkyl group may have, for example, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a hydroxyl group or the like.

式(b-2)中,R5 ”~R6 ”分別獨立表示芳基或烷基。R5 ”~R6 ”中,至少1個表示芳基。R5 ”~R6 ”之全部為芳基為佳。In the formula (b-2), R 5 " to R 6 " each independently represent an aryl group or an alkyl group. At least one of R 5 " to R 6 " represents an aryl group. It is preferred that all of R 5 " to R 6 " is an aryl group.

R5 ”~R6 ”之芳基,為與R1 ”~R3 ”之芳基為相同之內容。The aryl group of R 5 " to R 6 " is the same as the aryl group of R 1 " to R 3 ".

R5 ”~R6 ”之烷基,為與R1 ”R3 ”之烷基為相同之內容。The alkyl group of R 5 " to R 6 " is the same as the alkyl group of R 1 "R 3 ".

該些之中,又以R5 ”~R6 ”全部為苯基為最佳。Among these, it is preferable that all of R 5 " to R 6 " are phenyl groups.

式(b-2)中之R4 ”為與上述式(b-1)之R4 ”為相同之內容。Of formula (b-2) in the R 4 "and R in the above formula (b-1) of the 4" of the same content.

式(b-1)、(b-2)所表示之鎓鹽系酸產生劑之具體例如,二苯基碘鎓之三氟甲烷磺酸酯或九氟丁烷磺酸酯、雙(4-tert-丁基苯基)碘鎓之三氟甲烷磺酸酯或九氟丁烷磺酸酯、三苯基鋶之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯、三(4-甲基苯基)鋶之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯、二甲基(4-羥基萘基)鋶之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯、單苯基二甲基鋶之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯;二苯基單甲基鋶之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯、(4-甲基苯基)二苯基鋶之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯、(4-甲氧基苯基)二苯基鋶之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯、三(4-tert-丁基)苯基鋶之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯、二苯基(1-(4-甲氧基)萘基)鋶之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯、二(1-萘基)苯基鋶之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯;1-苯基四氫噻吩鎓之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯;1-(4-甲基苯基)四氫噻吩鎓之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯;1-(3,5-二甲基-4-羥苯基)四氫噻吩鎓之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯;1-(4-甲氧基萘-1-基)四氫噻吩鎓之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯;1-(4-乙氧基萘-1-基)四氫噻吩鎓之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯;1-(4-n-丁氧基萘-1-基)四氫噻吩鎓之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯;1-苯基四氫噻喃鎓之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯;1-(4-羥苯基)四氫噻喃鎓之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯;1-(3,5-二甲基-4-羥苯基)四氫噻喃鎓之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯;1-(4-甲基苯基)四氫噻喃鎓之三氟甲烷磺酸酯、其七氟丙烷磺酸酯或其九氟丁烷磺酸酯等。Specific examples of the phosphonium-based acid generator represented by the formulae (b-1) and (b-2) are, for example, diphenyliodonium trifluoromethanesulfonate or nonafluorobutanesulfonate, bis(4- Tert-butylphenyl) iodonium trifluoromethanesulfonate or nonafluorobutanesulfonate, triphenylsulfonium trifluoromethanesulfonate, heptafluoropropanesulfonate or its nonafluorobutanesulfonic acid Ethyl ester, tris(4-methylphenyl)phosphonium trifluoromethanesulfonate, heptafluoropropane sulfonate or its nonafluorobutane sulfonate, dimethyl(4-hydroxynaphthyl)phosphonium trifluoromethane a sulfonate, a heptafluoropropane sulfonate or a nonafluorobutane sulfonate thereof, a triphenylmethanesulfonate of monophenyldimethylhydrazine, a heptafluoropropane sulfonate thereof or a nonafluorobutane sulfonate thereof; a trifluoromethanesulfonate of phenylmonomethylhydrazine, a heptafluoropropanesulfonate thereof or a nonafluorobutanesulfonate thereof, a trifluoromethanesulfonate of (4-methylphenyl)diphenylphosphonium, Heptafluoropropane sulfonate or its nonafluorobutane sulfonate, (4-methoxyphenyl)diphenylphosphonium trifluoromethanesulfonate, heptafluoropropane sulfonate or its nonafluorobutane sulfonate, Tris(4-tert-butyl)phenylhydrazine trifluoromethanesulfonate, Heptafluoropropane sulfonate or its nonafluorobutane sulfonate, triphenylmethanesulfonate of diphenyl(1-(4-methoxy)naphthyl)anthracene, heptafluoropropane sulfonate or its nonafluorobutane a sulfonate, a trifluoromethanesulfonate of bis(1-naphthyl)phenylhydrazine, a heptafluoropropanesulfonate or a nonafluorobutanesulfonate thereof; a trifluoromethanesulfonate of 1-phenyltetrahydrothiophene An acid ester, a heptafluoropropane sulfonate or a nonafluorobutane sulfonate thereof; a trifluoromethanesulfonate of 1-(4-methylphenyl)tetrahydrothiophene, a heptafluoropropane sulfonate or a nonafluorobutane thereof Alkanesulfonate; trifluoromethanesulfonate of 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophene, its heptafluoropropane sulfonate or its nonafluorobutane sulfonate; -(4-methoxynaphthalen-1-yl)tetrahydrothiophene trifluoromethanesulfonate, heptafluoropropane sulfonate or its nonafluorobutane sulfonate; 1-(4-ethoxynaphthalene- 1-yl)tetrahydrothiophene trifluoromethanesulfonate, heptafluoropropane sulfonate or nonafluorobutane sulfonate; 1-(4-n-butoxynaphthalen-1-yl)tetrahydrothiophene Trifluoromethanesulfonate, heptafluoropropane sulfonate or nonafluorobutane sulfonate; 1-phenyltetrahydrothiopyran Trifluoromethanesulfonate, its heptafluoropropane sulfonate or its nonafluorobutane sulfonate; trifluoromethanesulfonate of 1-(4-hydroxyphenyl)tetrahydrothiopyranium, its heptafluoropropane sulfonate or Its nonafluorobutane sulfonate; trifluoromethanesulfonate of 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiopyranium, its heptafluoropropane sulfonate or its nonafluorobutane a sulfonate; a trifluoromethanesulfonate of 1-(4-methylphenyl)tetrahydrothiopyrene; a heptafluoropropane sulfonate or a nonafluorobutanesulfonate thereof.

又,亦可使用該些鎓鹽之陰離子部被甲烷磺酸酯、n-丙烷磺酸酯、n-丁烷磺酸酯、n-辛烷磺酸酯等之烷基磺酸酯所取代之鎓鹽。Further, the anion portion of the cerium salt may be replaced by an alkyl sulfonate such as methanesulfonate, n-propane sulfonate, n-butane sulfonate or n-octane sulfonate.鎓 salt.

又,亦可使用該些鎓鹽之陰離子部被下述式(b1)~(b8)之任一所表示之陰離子部所取代之鎓鹽。Further, an anthracene salt in which the anion portion of the onium salt is replaced by an anion portion represented by any one of the following formulas (b1) to (b8) may be used.

[式中,p為1~3之整數,q1~q2為分別獨立之1~5之整數,q3為1~12之整數,t3為1~3之整數,r1~r2為分別獨立之0~3之整數,g為1~20之整數,R7 為取代基,n1~n5為分別獨立之0或1,v1~v5為分別獨立之0~3之整數,w1~w5為分別獨立之0~3之整數,Q”與前述為相同之內容]。[wherein, p is an integer of 1 to 3, q1 to q2 are integers of 1 to 5, respectively, q3 is an integer of 1 to 12, t3 is an integer of 1 to 3, and r1 to r2 are independent of 0 to An integer of 3, g is an integer of 1 to 20, R 7 is a substituent, n1 to n5 are independently 0 or 1, and v1 to v5 are independent integers of 0 to 3, respectively, and w1 to w5 are independent of 0. An integer of ~3, Q” is the same as the above.].

R7 之取代基,為與前述X中,脂肪族烴基所可具有之取代基、芳香族烴基所可具有之取代基所列舉者為相同之內容。The substituent of R 7 is the same as those which may be mentioned in the above X, the substituent which the aliphatic hydrocarbon group may have, and the substituent which the aromatic hydrocarbon group may have.

R7 所附之符號(r1、w1~w5)為2以上之整數之情形,該化合物中之複數之R7 可分別為相同亦可,相異亦可。In the case where the symbols (r1, w1 to w5) attached to R 7 are integers of 2 or more, the plural R 7 in the compound may be the same or different.

又,鎓鹽系酸產生劑亦可使用前述通式(b-1)或(b-2)中,陰離子部被下述通式(b-3)或(b-4)所表示之陰離子部所取代之鎓鹽系酸產生劑(陽離子部與(b-1)或(b-2)為相同之內容)。Further, the hydrazine salt-based acid generator may be an anion portion represented by the following formula (b-3) or (b-4) in the above formula (b-1) or (b-2). The substituted sulfonium acid generator (the cation moiety is the same as (b-1) or (b-2)).

[式中,X”表示至少1個氫原子被氟原子所取代之碳數2~6之伸烷基;Y”、Z”,分別表示為獨立之至少1個氫原子被氟原子所取代之碳數1~10之烷基]。[wherein, X" represents a C 2-6 alkyl group substituted with at least one hydrogen atom by a fluorine atom; Y", Z", respectively, wherein at least one hydrogen atom is independently replaced by a fluorine atom. An alkyl group having 1 to 10 carbon atoms].

X”為至少1個之氫原子被氟原子所取代之直鏈狀或分支鏈狀之伸烷基,該伸烷基之碳數為2~6,較佳為碳數3~5,最佳為碳數3。X" is a linear or branched alkyl group in which at least one hydrogen atom is replaced by a fluorine atom, and the alkyl group has a carbon number of 2 to 6, preferably 3 to 5 carbon atoms, preferably It has a carbon number of 3.

Y”、Z”,為分別獨立之至少1個氫原子被氟原子所取代之直鏈狀或分支鏈狀之烷基,該烷基之碳數為1~10,較佳為碳數1~7,更佳為碳數1~3。Y", Z" are straight-chain or branched-chain alkyl groups in which at least one hydrogen atom is independently substituted by a fluorine atom, and the alkyl group has a carbon number of 1 to 10, preferably a carbon number of 1 to 7, more preferably a carbon number of 1-3.

X”之伸烷基之碳數或Y”、Z”之烷基之碳數於上述碳數之範圍內時,就對光阻溶劑具有良好之溶解性等理由,以越小越好。When the carbon number of the alkyl group of X" or the carbon number of the alkyl group of Y" or Z" is in the range of the above carbon number, the solubility in the resist solvent is good, and the smaller the better.

又,X”之伸烷基或Y”、Z”之烷基中,氟原子所取代之氫原子的數目越多時,該酸的強度越強,又可提高對200 nm以下之高能量光或電子線之透明性等而為較佳。該伸烷基或烷基中之氟原子之比例,即氟化率,較佳為70~100%,更佳為90~100%,最佳為全部之氫原子被氟原子所取代之全氟伸烷基或全氟烷基。Further, in the alkyl group of X" or the alkyl group of Y" or Z", the more the number of hydrogen atoms substituted by the fluorine atom, the stronger the strength of the acid, and the higher the energy of light below 200 nm. Or preferably, the ratio of the fluorine atom in the alkyl group or the alkyl group, that is, the fluorination rate is preferably from 70 to 100%, more preferably from 90 to 100%, most preferably A perfluoroalkylene or perfluoroalkyl group in which all of the hydrogen atoms are replaced by fluorine atoms.

又,具有下述通式(b-5)或(b-6)所表示之陽離子部之鋶鹽亦可作為鎓鹽系酸產生劑使用。Further, the onium salt having a cationic portion represented by the following formula (b-5) or (b-6) can also be used as a phosphonium-based acid generator.

[式中,R41 ~R46 為各自獨立之烷基、乙醯基、烷氧基、羧基、羥基或羥烷基;n1 ~n5 為各自獨立之0~3之整數,n6 為0~2之整數]。Wherein R 41 to R 46 are each independently an alkyl group, an ethyl group, an alkoxy group, a carboxyl group, a hydroxyl group or a hydroxyalkyl group; n 1 to n 5 are each independently an integer of 0 to 3, and n 6 is An integer from 0 to 2].

R41 ~R46 中,烷基以碳數1~5之烷基為佳,其中又以直鏈或分支鏈狀之烷基為更佳,以甲基、乙基、丙基、異丙基、n-丁基,或tert-丁基為特佳。In R 41 to R 46 , the alkyl group is preferably an alkyl group having 1 to 5 carbon atoms, more preferably a linear or branched alkyl group, and a methyl group, an ethyl group, a propyl group or an isopropyl group. , n-butyl, or tert-butyl is particularly preferred.

烷氧基以碳數1~5之烷氧基為佳,其中又以直鏈或分支鏈狀之烷氧基為更佳,以甲氧基、乙氧基為特佳。The alkoxy group is preferably an alkoxy group having 1 to 5 carbon atoms, more preferably a linear or branched alkoxy group, and particularly preferably a methoxy group or an ethoxy group.

羥烷基以上述烷基中之一個或複數個氫原子被羥基所取代之基為佳,例如羥甲基、羥乙基、羥丙基等。The hydroxyalkyl group is preferably a group in which one of the above alkyl groups or a plurality of hydrogen atoms is substituted by a hydroxyl group, such as a methylol group, a hydroxyethyl group, a hydroxypropyl group or the like.

R41 ~R46 所附之符號n1 ~n6 為2以上之整數之情形,複數之R41 ~R46 可分別為相同亦可,相異亦可。In the case where the symbols n 1 to n 6 attached to R 41 to R 46 are integers of 2 or more, the plural numbers R 41 to R 46 may be the same or different.

n1 ,較佳為0~2,更佳為0或1,最佳為0。n 1 , preferably 0 to 2, more preferably 0 or 1, most preferably 0.

n2 及n3 ,較佳為各自獨立之0或1,更佳為0。n 2 and n 3 are preferably each independently 0 or 1, more preferably 0.

n4 ,較佳為0~2,更佳為0或1。n 4 is preferably 0 to 2, more preferably 0 or 1.

n5 ,較佳為0或1,更佳為0。n 5 is preferably 0 or 1, more preferably 0.

n6 ,較佳為0或1,更佳為1。n 6 is preferably 0 or 1, more preferably 1.

具有式(b-5)或(b-6)所表示之陽離子部之鋶鹽的陰離子部,並未有特別限定,其可使用與目前為止被提案之鎓鹽系酸產生劑的陰離子部為相同之內容。該陰離子部,例如上述通式(b-1)或(b-2)所表示之鎓鹽系酸產生劑之陰離子部(R4” SO3 - )等之氟化烷基磺酸離子;例如上述通式(b-3)或(b-4)所表示之陰離子部等。The anion portion having the sulfonium salt of the cation portion represented by the formula (b-5) or (b-6) is not particularly limited, and an anion portion of the sulfonium salt acid generator which has been proposed so far can be used. The same content. The anion portion is, for example, a fluorinated alkylsulfonic acid ion such as an anion portion (R 4 " SO 3 - ) of the onium salt acid generator represented by the above formula (b-1) or (b-2); for example An anion portion or the like represented by the above formula (b-3) or (b-4).

本說明書中,肟磺酸酯系酸產生劑係指,至少具有一個下述通式(B-1)所表示之基的化合物,且具有經由輻射線之照射而產生酸之特性者。該些肟磺酸酯系酸產生劑,常被使用於化學増幅型光阻組成物用,可由其中任意地選擇使用。In the present specification, the oxime sulfonate-based acid generator is a compound having at least one group represented by the following formula (B-1) and having a property of generating an acid by irradiation with radiation. These oxime sulfonate-based acid generators are often used for chemical ruthenium-type photoresist compositions, and can be arbitrarily selected and used.

[式(B-1)中,R31 、R32 分別表示獨立之有機基][In the formula (B-1), R 31 and R 32 each represent an independent organic group]

R31 、R32 之有機基,可具有含有碳原子之基,碳原子以外之原子(例如氫原子、氧原子、氮原子、硫原子、鹵素原子(氟原子、氯原子等)等)亦可。The organic group of R 31 and R 32 may have a group containing a carbon atom, and an atom other than a carbon atom (for example, a hydrogen atom, an oxygen atom, a nitrogen atom, a sulfur atom, a halogen atom (a fluorine atom, a chlorine atom, etc.)) may be used. .

R31 之有機基,以直鏈狀、分支鏈狀或環狀之烷基或芳基為佳。該些之烷基,芳基可具有取代基。該取代基,並未有特別限制,例如氟原子、碳數1~6之直鏈狀、分支鏈狀或環狀之烷基等。於此,「具有取代基」係指,烷基或芳基之氫原子的一部份或全部被取代基所取代之意。The organic group of R 31 is preferably a linear, branched or cyclic alkyl or aryl group. The alkyl group, the aryl group may have a substituent. The substituent is not particularly limited, and examples thereof include a fluorine atom, a linear chain having 1 to 6 carbon atoms, a branched chain or a cyclic alkyl group. Here, the "having a substituent" means that a part or the whole of a hydrogen atom of an alkyl group or an aryl group is substituted by a substituent.

烷基,例如以碳數1~20為佳,以碳數1~10為較佳,以碳數1~8為更佳,以碳數1~6為特佳、以碳數1~4為最佳。烷基,特別是以部份或完全被鹵化之烷基(以下,亦稱為鹵化烷基)為佳。又,部份鹵化之烷基係指,氫原子之一部份被鹵素原子所取代之烷基之意,完全鹵化之烷基係指,氫原子全部被鹵素原子所取代之烷基之意。鹵素原子,例如,氟原子、氯原子、溴原子、碘原子等,特別是以氟原子為佳。即,鹵化烷基以氟化烷基為佳。The alkyl group is preferably a carbon number of 1 to 20, preferably a carbon number of 1 to 10, more preferably a carbon number of 1 to 8, a carbon number of 1 to 6 or a carbon number of 1 to 4. optimal. The alkyl group is particularly preferably an alkyl group which is partially or completely halogenated (hereinafter, also referred to as a halogenated alkyl group). Further, a partially halogenated alkyl group means an alkyl group in which a part of a hydrogen atom is replaced by a halogen atom, and a completely halogenated alkyl group means an alkyl group in which a hydrogen atom is entirely substituted by a halogen atom. The halogen atom, for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or the like, is preferably a fluorine atom. That is, the halogenated alkyl group is preferably a fluorinated alkyl group.

芳基以碳數4~20為佳,以碳數4~10為更佳,以碳數6~10為最佳。芳基特別是以部份或完全被鹵化之芳基為佳。又,部份被鹵化之芳基係指,氫原子之一部份被鹵素原子所取代之芳基之意,完全被鹵化之芳基係指,氫原子全部被鹵素原子所取代之芳基之意。The aryl group is preferably a carbon number of 4 to 20, more preferably a carbon number of 4 to 10, and most preferably a carbon number of 6 to 10. The aryl group is particularly preferably an aryl group which is partially or completely halogenated. Further, a partially halogenated aryl group means an aryl group in which a part of a hydrogen atom is replaced by a halogen atom, an aryl group which is completely halogenated, and an aryl group in which a hydrogen atom is entirely substituted by a halogen atom. meaning.

R31 ,特別是以不具有取代基之碳數1~4之烷基,或碳數1~4之氟化烷基為佳。R 31 is particularly preferably an alkyl group having 1 to 4 carbon atoms or a fluorinated alkyl group having 1 to 4 carbon atoms which does not have a substituent.

R32 之有機基,以直鏈狀、分支鏈狀或環狀之烷基、芳基或氰基為佳。R32 之烷基、芳基,為與前述R31 所列舉之烷基、芳基為相同之內容。The organic group of R 32 is preferably a linear, branched or cyclic alkyl group, aryl group or cyano group. The alkyl group and the aryl group of R 32 are the same as those of the alkyl group and the aryl group exemplified in the above R 31 .

R32 ,特別是以氰基、不具有取代基之碳數1~8之烷基,或碳數1~8之氟化烷基為佳。R 32 is particularly preferably a cyano group, an alkyl group having 1 to 8 carbon atoms which does not have a substituent, or a fluorinated alkyl group having 1 to 8 carbon atoms.

肟磺酸酯系酸產生劑,更佳者例如下述通式(B-2)或(B-3)所表示之化合物等。The oxime sulfonate-based acid generator is more preferably a compound represented by the following formula (B-2) or (B-3).

[式(B-2)中,R33 為氰基、不具有取代基之烷基或鹵化烷基。R34 為芳基。R35 為不具有取代基之烷基或鹵化烷基]。[In the formula (B-2), R 33 is a cyano group, an alkyl group having no substituent or a halogenated alkyl group. R 34 is an aryl group. R 35 is an alkyl group or a halogenated alkyl group having no substituent.

[式(B-3)中,R36 為氰基、不具有取代基之烷基或鹵化烷基。R37 為2或3價之芳香族烴基。R38 為不具有取代基之烷基或鹵化烷基。p”為2或3]。[In the formula (B-3), R 36 is a cyano group, an alkyl group having no substituent or a halogenated alkyl group. R 37 is a 2 or 3 valent aromatic hydrocarbon group. R 38 is an alkyl group or a halogenated alkyl group having no substituent. p" is 2 or 3].

前述通式(B-2)中,R33 之不具有取代基之烷基或鹵化烷基,以碳數為1~10為佳,以碳數1~8為較佳,以碳數1~6為最佳。In the above formula (B-2), the alkyl group or the halogenated alkyl group having no substituent of R 33 is preferably a carbon number of from 1 to 10, preferably a carbon number of from 1 to 8, and a carbon number of from 1 to 8. 6 is the best.

R33 ,以鹵化烷基為佳,以氟化烷基為更佳。R 33 is preferably a halogenated alkyl group or more preferably a fluorinated alkyl group.

R33 中之氟化烷基,以烷基之氫原子被50%以上氟化者為佳,被70%以上氟化者為更佳,被90%以上氟化者為特佳。The fluorinated alkyl group in R 33 is preferably one in which the hydrogen atom of the alkyl group is fluorinated by 50% or more, more preferably 70% or more of fluorinated, and particularly preferably 90% or more of fluorinated.

R34 之芳基為,由苯基、聯苯基(biphenyl)、芴基(fluorenyl)、萘基、蒽基(anthryl)、菲基等之芳香族烴環去除1個氫原子所得之基,及構成該些之基的環之碳原子的一部份被氧原子、硫原子、氮原子等之雜原子所取代之雜芳基等。該些之中又以芴基為佳。The aryl group of R 34 is a group obtained by removing one hydrogen atom from an aromatic hydrocarbon ring such as a phenyl group, a biphenyl group, a fluorenyl group, a naphthyl group, an anthyl group or a phenanthryl group. And a heteroaryl group in which a part of carbon atoms of the ring constituting the group is substituted with a hetero atom such as an oxygen atom, a sulfur atom or a nitrogen atom. Among them, the base is better.

R34 之芳基,可具有碳數1~10之烷基、鹵化烷基、烷氧基等之取代基。該取代基中之烷基或鹵化烷基,以碳數1~8為佳,以碳數1~4為更佳。又,該鹵化烷基以氟化烷基為佳。The aryl group of R 34 may have a substituent of an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group, an alkoxy group or the like. The alkyl group or the halogenated alkyl group in the substituent is preferably a carbon number of from 1 to 8, more preferably a carbon number of from 1 to 4. Further, the halogenated alkyl group is preferably a fluorinated alkyl group.

R35 之不具有取代基之烷基或鹵化烷基,以碳數為1~10為佳,以碳數1~8為較佳,以碳數1~6為最佳。The alkyl group or the halogenated alkyl group having no substituent of R 35 is preferably a carbon number of from 1 to 10, preferably a carbon number of from 1 to 8, and most preferably a carbon number of from 1 to 6.

R35 ,以鹵化烷基為佳,以氟化烷基為更佳。R 35 is preferably a halogenated alkyl group or more preferably a fluorinated alkyl group.

R35 中之氟化烷基,以烷基之氫原子被50%以上氟化者為佳,被70%以上氟化者為更佳,被90%以上氟化者,以可提高所發生之酸的強度而為特佳。最佳為,氫原子被100%氟所取代之完全氟化烷基。The fluorinated alkyl group in R 35 is preferably one in which the hydrogen atom of the alkyl group is fluorinated by 50% or more, more preferably 70% or more of fluorinated, and more preferably 90% or more of fluorinated. It is particularly good for the strength of the acid. Most preferred is a fully fluorinated alkyl group in which the hydrogen atom is replaced by 100% fluorine.

前述通式(B-3)中,R36 之不具有取代基之烷基或鹵化烷基為與上述R33 之不具有取代基之烷基或鹵化烷基為相同之內容。In the above formula (B-3), the alkyl group or the halogenated alkyl group having no substituent of R 36 is the same as the alkyl group or the halogenated alkyl group having no substituent of R 33 described above.

R37 之2或3價之芳香族烴基,例如上述R34 之芳基再去除1或2個氫原子所得之基等。A 2 or 3 valent aromatic hydrocarbon group of R 37 , for example, a group obtained by removing 1 or 2 hydrogen atoms from the aryl group of the above R 34 or the like.

R38 之不具有取代基之烷基或鹵化烷基為與上述R35 之不具有取代基之烷基或鹵化烷基為相同之內容。The alkyl group or the halogenated alkyl group having no substituent of R 38 is the same as the alkyl group or the halogenated alkyl group having no substituent of R 35 described above.

p”,較佳為2。p", preferably 2.

肟磺酸酯系酸產生劑之具體例如,α-(p-甲苯磺醯基氧亞胺基)-苄基氰化物(cyanide)、α-(p-氯基苯磺醯基氧亞胺基)-苄基氰化物、α-(4-硝基苯磺醯基氧亞胺基)-苄基氰化物、α-(4-硝基-2-三氟甲基苯磺醯基氧亞胺基)-苄基氰化物、α-(苯磺醯基氧亞胺基)-4-氯基苄基氰化物、α-(苯磺醯基氧亞胺基)-2,4-二氯基苄基氰化物、α-(苯磺醯基氧亞胺基)-2,6-二氯基苄基氰化物、α-(苯磺醯基氧亞胺基)-4-甲氧基苄基氰化物、α-(2-氯基苯磺醯基氧亞胺基)-4-甲氧基苄基氰化物、α-(苯磺醯基氧亞胺基)-噻嗯-2-基乙腈、α-(4-十二烷基苯磺醯基氧亞胺基)-苄基氰化物、α-[(p-甲苯磺醯基氧亞胺基)-4-甲氧基苯基]乙腈、α-[(十二烷基苯磺醯基氧亞胺基)-4-甲氧基苯基]乙腈、α-(甲基磺醯氧亞胺基)-4-噻嗯基氰化物、α-(甲基磺醯基氧亞胺基)-1-環戊烯基乙腈、α-(甲基磺醯基氧亞胺基)-1-環己烯基乙腈、α-(甲基磺醯基氧亞胺基)-1-環庚烯基乙腈、α-(甲基磺醯基氧亞胺基)-1-環辛烯基乙腈、α-(三氟甲基磺醯基氧亞胺基)-1-環戊烯基乙腈、α-(三氟甲基磺醯基氧亞胺基)-環己基乙腈、α-(乙基磺醯基氧亞胺基)-乙基乙腈、α-(丙基磺醯基氧亞胺基)-丙基乙腈、α-(環己基磺醯基氧亞胺基)-環戊基乙腈、α-(環己基磺醯基氧亞胺基)-環己基乙腈、α-(環己基磺醯基氧亞胺基)-1-環戊烯基乙腈、α-(乙基磺醯基氧亞胺基)-1-環戊烯基乙腈、α-(異丙基磺醯基氧亞胺基)-1-環戊烯基乙腈、α-(n-丁基磺醯基氧亞胺基)-1-環戊烯基乙腈、α-(乙基磺醯基氧亞胺基)-1-環己烯基乙腈、α-(異丙基磺醯基氧亞胺基)-1-環己烯基乙腈、α-(n-丁基磺醯基氧亞胺基)-1-環己烯基乙腈、α-(甲基磺醯基氧亞胺基)-苯基乙腈、α-(甲基磺醯基氧亞胺基)-p-甲氧基苯基乙腈、α-(三氟甲基磺醯基氧亞胺基)-苯基乙腈、α-(三氟甲基磺醯基氧亞胺基)-p-甲氧基苯基乙腈、α-(乙基磺醯基氧亞胺基)-p-甲氧基苯基乙腈、α-(丙基磺醯基氧亞胺基)-p-甲基苯基乙腈、α-(甲基磺醯基氧亞胺基)-p-溴基苯基乙腈等。Specific examples of the oxime sulfonate-based acid generator are, for example, α-(p-toluenesulfonyloxyimino)-benzyl cyanide (cyanide), α-(p-chlorophenylsulfonyloxyimino) )-Benzyl cyanide, α-(4-nitrophenylsulfonyloxyimino)-benzyl cyanide, α-(4-nitro-2-trifluoromethylbenzenesulfonyloxyimide Base)-benzyl cyanide, α-(phenylsulfonyloxyimido)-4-chlorobenzyl cyanide, α-(phenylsulfonyloxyimino)-2,4-dichloro Benzyl cyanide, α-(phenylsulfonyloxyimino)-2,6-dichlorobenzyl cyanide, α-(phenylsulfonyloxyimino)-4-methoxybenzyl Cyanide, α-(2-chlorophenylsulfonyloxyimino)-4-methoxybenzyl cyanide, α-(phenylsulfonyloxyimino)-thio-2-ylacetonitrile , α-(4-dodecylbenzenesulfonyloxyimino)-benzyl cyanide, α-[(p-toluenesulfonyloxyimino)-4-methoxyphenyl]acetonitrile , α-[(dodecylbenzenesulfonyloxyimino)-4-methoxyphenyl]acetonitrile, α-(methylsulfonyloxyimino)-4-thienyl cyanide, --(methylsulfonyloxyimino)-1-cyclopentenylacetonitrile, α-(methylsulfonyloxyimino)-1-cyclohexenyl B , α-(methylsulfonyloxyimino)-1-cycloheptenylacetonitrile, α-(methylsulfonyloxyimino)-1-cyclooctenylacetonitrile, α-(trifluoro Methylsulfonyloxyimino)-1-cyclopentenylacetonitrile, α-(trifluoromethylsulfonyloxyimino)-cyclohexylacetonitrile, α-(ethylsulfonyloxyimine Ethylacetonitrile, α-(propylsulfonyloxyimino)-propylacetonitrile, α-(cyclohexylsulfonyloxyimino)-cyclopentylacetonitrile, α-(cyclohexylsulfonate) Mercaptooxyimido)-cyclohexylacetonitrile, α-(cyclohexylsulfonyloxyimino)-1-cyclopentenylacetonitrile, α-(ethylsulfonyloxyimino)-1- Cyclopentenylacetonitrile, α-(isopropylsulfonyloxyimido)-1-cyclopentenylacetonitrile, α-(n-butylsulfonyloxyimino)-1-cyclopentene Acetonitrile, α-(ethylsulfonyloxyimino)-1-cyclohexenylacetonitrile, α-(isopropylsulfonyloxyimino)-1-cyclohexenylacetonitrile, α- (n-butylsulfonyloxyimino)-1-cyclohexenylacetonitrile, α-(methylsulfonyloxyimino)-phenylacetonitrile, α-(methylsulfonyloxy) Amino)-p-methoxyphenylacetonitrile, α-(trifluoromethylsulfonyloxyimino)-phenyl Nitrile, α-(trifluoromethylsulfonyloxyimino)-p-methoxyphenylacetonitrile, α-(ethylsulfonyloxyimino)-p-methoxyphenylacetonitrile, --(propylsulfonyloxyimino)-p-methylphenylacetonitrile, α-(methylsulfonyloxyimino)-p-bromophenylacetonitrile, and the like.

又,也可使用特開平9-208554號公報(段落[0012]~[0014]之[化18]~[化19])所揭示之肟磺酸酯系酸產生劑、WO2004/074242A2(65~85頁之Example1~40)所揭示之肟磺酸酯系酸產生劑。Further, an oxime sulfonate-based acid generator disclosed in JP-A-9-208554 (paragraphs [0012] to [0014] [Chem. 18] to [Chem. 19]), WO2004/074242A2 (65-) can also be used. The sulfonate-based acid generator disclosed in Examples 1 to 40 of page 85.

又,較佳之內容可例如以下之例示內容。Further, the preferred content can be exemplified below, for example.

重氮甲烷系酸產生劑中,雙烷基或雙芳基磺醯基重氮甲烷類之具體例如,雙(異丙基磺醯基)重氮甲烷、雙(p-甲苯磺醯基)重氮甲烷、雙(1,1-二甲基乙基磺醯基)重氮甲烷、雙(環己基磺醯基)重氮甲烷、雙(2,4-二甲基苯基磺醯基)重氮甲烷等。Among the diazomethane acid generators, specific examples of the dialkyl or bisarylsulfonyldiazomethanes are, for example, bis(isopropylsulfonyl)diazomethane and bis(p-toluenesulfonyl) Nitrogen methane, bis(1,1-dimethylethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(2,4-dimethylphenylsulfonyl) Nitrogen methane, etc.

又,也可使用特開平11-035551號公報、特開平11-035552號公報、特開平11-035573號公報所揭示之重氮甲烷系酸產生劑。Further, the diazomethane-based acid generator disclosed in JP-A-H11-035551, JP-A-H11-035552, and JP-A-11-035573 can also be used.

又,聚(雙磺醯基)重氮甲烷類,例如,特開平11-322707號公報所揭示之1,3-雙(苯基磺醯基重氮甲基磺醯基)丙烷、1,4-雙(苯基磺醯基重氮甲基磺醯基)丁烷、1,6-雙(苯基磺醯基重氮甲基磺醯基)己烷、1,10-雙(苯基磺醯基重氮甲基磺醯基)癸烷、1,2-雙(環己基磺醯基重氮甲基磺醯基)乙烷、1,3-雙(環己基磺醯基重氮甲基磺醯基)丙烷、1,6-雙(環己基磺醯基重氮甲基磺醯基)己烷、1,10-雙(環己基磺醯基重氮甲基磺醯基)癸烷等。Further, poly(disulfonyl)diazomethane, for example, 1,3-bis(phenylsulfonyldiazomethylsulfonyl)propane disclosed in JP-A-11-322707, 1, 4 - bis(phenylsulfonyldiazomethylsulfonyl)butane, 1,6-bis(phenylsulfonyldiazomethylsulfonyl)hexane, 1,10-bis(phenylsulfonate) Mercaptodiazepinemethanesulfonyl)decane, 1,2-bis(cyclohexylsulfonyldiazomethylsulfonyl)ethane, 1,3-bis(cyclohexylsulfonyldiazomethyl) Sulfhydryl)propane, 1,6-bis(cyclohexylsulfonyldiazomethylsulfonyl)hexane, 1,10-bis(cyclohexylsulfonyldiazomethylsulfonyl)decane, etc. .

(B)成份,可單獨使用1種該些之酸產生劑,或將2種以上組合使用亦可。(B) The component may be used alone or in combination of two or more.

本發明中,(B)成份以使用氟化烷基磺酸離子作為陰離子之鎓鹽系酸產生劑為佳。In the present invention, the component (B) is preferably an anthraquinone-based acid generator using a fluorinated alkylsulfonic acid ion as an anion.

本發明之正型光阻組成物中之(B)成份之含量為,相對於(A)成份100質量份,以0.5~50質量份為佳,以1~40質量份為更佳。於上述範圍內時,可充分進行圖型形成。又,可得到均勻之溶液、良好之保存安定性等,而為較佳。The content of the component (B) in the positive resist composition of the present invention is preferably 0.5 to 50 parts by mass, more preferably 1 to 40 parts by mass, per 100 parts by mass of the component (A). When it is in the above range, pattern formation can be sufficiently performed. Further, it is preferred to obtain a uniform solution, good storage stability, and the like.

<任意成份><arbitrary ingredients>

本發明之正型光阻組成物中,任意之成份,可再含有含氮有機化合物(D)(以下,亦稱為(D)成份)亦可。In the positive resist composition of the present invention, any component may further contain a nitrogen-containing organic compound (D) (hereinafter also referred to as a component (D)).

(D)成份,只要可作為酸擴散控制劑,即可作為抑制經由曝光而由前述(B)成份所發生之酸的抑制劑之作用的物質時,並未有特別限定,目前已有各式各樣成份之提案,只要由公知之內容中任意選擇使用即可,其中又以脂肪族胺、特別是二級脂肪族胺或三級脂肪族胺為佳。於此,脂肪族胺係指具有1個以上之脂肪族基之胺,該脂肪族基以碳數1~20為佳。The component (D) is not particularly limited as long as it can act as an acid diffusion controlling agent, and can act as an inhibitor of an acid generated by the component (B) by exposure. The proposal of each component may be arbitrarily selected from known contents, and among them, an aliphatic amine, particularly a secondary aliphatic amine or a tertiary aliphatic amine is preferred. Here, the aliphatic amine means an amine having one or more aliphatic groups, and the aliphatic group preferably has 1 to 20 carbon atoms.

脂肪族胺,例如,氨NH3 之氫原子的至少1個被碳數20以下之烷基或羥烷基所取代之胺(烷基胺或烷醇胺)或環式胺等。The aliphatic amine is, for example, an amine (alkylamine or alkanolamine) or a cyclic amine in which at least one hydrogen atom of ammonia NH 3 is substituted with an alkyl group having 20 or less carbon atoms or a hydroxyalkyl group.

烷基胺及烷醇胺之具體例如,n-己胺、n-庚胺、n-辛胺、n-壬胺、n-癸胺等之單烷基胺;二乙基胺、二-n-丙基胺、二-n-庚胺、二-n-辛胺、二環己基胺等之二烷基胺;三甲基胺、三乙胺、三-n-丙基胺、三-n-丁基胺、三-n-己胺、三-n-戊基胺、三-n-庚胺、三-n-辛胺、三-n-壬胺、三-n-癸胺、三-n-十二烷胺等之三烷基胺;二乙醇胺、三乙醇胺、二異丙醇胺、三異丙醇胺、二-n-辛醇胺、三-n-辛醇胺、硬脂基二乙醇胺、月桂基二乙醇胺等之烷基醇胺等。其中又以三烷基胺及/或烷醇胺為佳。Specific examples of the alkylamine and the alkanolamine are monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-decylamine, n-decylamine, etc.; diethylamine, di-n a dialkylamine such as propylamine, di-n-heptylamine, di-n-octylamine or dicyclohexylamine; trimethylamine, triethylamine, tri-n-propylamine, tri-n -butylamine, tri-n-hexylamine, tri-n-pentylamine, tri-n-heptylamine, tri-n-octylamine, tri-n-decylamine, tri-n-decylamine, tri- a trialkylamine such as n-dodecylamine; diethanolamine, triethanolamine, diisopropanolamine, triisopropanolamine, di-n-octanolamine, tri-n-octanolamine, stearyl An alkyl alcohol amine such as diethanolamine or lauryl diethanolamine. Among them, a trialkylamine and/or an alkanolamine is preferred.

環式胺,例如,含有雜原子之氮原子的雜環化合物等。該雜環化合物,可為單環式者(脂肪族單環式胺)亦可,多環式者(脂肪族多環式胺)亦可。The cyclic amine is, for example, a heterocyclic compound containing a nitrogen atom of a hetero atom. The heterocyclic compound may be a monocyclic one (aliphatic monocyclic amine) or a polycyclic one (aliphatic polycyclic amine).

脂肪族單環式胺,具體而言,例如,哌啶、哌嗪(piperazine)等。The aliphatic monocyclic amine is specifically, for example, piperidine, piperazine or the like.

脂肪族多環式胺,例如以碳數為6~10為佳,具體而言,例如,1,5-二氮雜二環[4.3.0]-5-壬烯、1,8-二氮雜二環[5.4.0]-7-十一碳烯、六伸甲基四胺、1,4-二氮雜二環[2.2.2]辛烷等。The aliphatic polycyclic amine is preferably, for example, a carbon number of 6 to 10, specifically, for example, 1,5-diazabicyclo[4.3.0]-5-nonene, 1,8-diaza Heterobicyclo[5.4.0]-7-undecene, heptamethyltetramine, 1,4-diazabicyclo[2.2.2]octane, and the like.

芳香族胺,例如苯胺、吡啶、4-二甲基胺基吡啶、吡咯、吲哚、吡唑、咪唑或該些之衍生物、二苯基胺、三苯基胺、三苄基胺等。Aromatic amines such as aniline, pyridine, 4-dimethylaminopyridine, pyrrole, hydrazine, pyrazole, imidazole or derivatives thereof, diphenylamine, triphenylamine, tribenzylamine and the like.

其他之脂肪族胺,例如三(2-甲氧基甲氧基乙基)胺、三{2-(2-甲氧基乙氧基)乙基}胺、三{2-(2-甲氧基乙氧基甲氧基)乙基}胺、三{2-(1-甲氧基乙氧基)乙基}胺、三{2-(1-乙氧基乙氧基)乙基}胺、三{2-(1-乙氧基丙氧基)乙基}胺、三[2-{2-(2-羥基乙氧基)乙氧基}乙基胺等。Other aliphatic amines such as tris(2-methoxymethoxyethyl)amine, tris{2-(2-methoxyethoxy)ethyl}amine, tris{2-(2-methoxy Ethylethoxymethoxy)ethyl}amine, tris{2-(1-methoxyethoxy)ethyl}amine, tris{2-(1-ethoxyethoxy)ethyl}amine And tris{2-(1-ethoxypropoxy)ethyl}amine, tris[2-{2-(2-hydroxyethoxy)ethoxy}ethylamine, and the like.

該些可單獨使用,或將2種以上組合使用亦可。These may be used alone or in combination of two or more.

(D)成份,相對於(A)成份100質量份,通常為使用0.01~5.0質量份之範圍。於上述範圍內時,可提高光阻圖型之形狀、存放之經時安定性等。The component (D) is usually used in an amount of from 0.01 to 5.0 parts by mass based on 100 parts by mass of the component (A). When it is in the above range, the shape of the resist pattern, the stability over time of storage, and the like can be improved.

本發明之正型光阻組成物中,就防止感度劣化,或提高光阻圖型之形狀、存放之經時安定性等目的,可含有任意成份之由有機羧酸、與磷之含氧酸及其衍生物所成群所選擇之至少1種之化合物(E)(以下,亦稱為(E)成份)。The positive resist composition of the present invention may contain any component of an organic carboxylic acid and an oxyacid of phosphorus in order to prevent deterioration of sensitivity, or to improve the shape of the resist pattern, the stability over time of storage, and the like. At least one compound (E) selected from the group consisting of its derivatives (hereinafter also referred to as (E) component).

有機羧酸,例如乙酸、丙二酸、檸檬酸、蘋果酸、琥珀酸、苯甲酸、水楊酸等為佳。An organic carboxylic acid such as acetic acid, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, salicylic acid or the like is preferred.

磷之含氧酸,例如磷酸、膦酸(Phosphonic acid)、次膦酸(Phosphinic acid)等,其中又以膦酸為佳。Phosphorus oxyacids such as phosphoric acid, Phosphonic acid, Phosphinic acid, etc., wherein phosphonic acid is preferred.

磷酸之含氧酸衍生物,例如前述含氧酸之氫原子被烴基取代所得之酯等,前述烴基,例如碳數1~5之烷基,碳數6~15之芳基等。The oxo acid derivative of phosphoric acid is, for example, an ester obtained by substituting a hydrogen atom of the oxo acid with a hydrocarbon group, and the hydrocarbon group is, for example, an alkyl group having 1 to 5 carbon atoms or an aryl group having 6 to 15 carbon atoms.

磷酸衍生物例如磷酸二-n-丁酯、磷酸二苯酯等磷酸酯等。The phosphoric acid derivative is, for example, a phosphate such as di-n-butyl phosphate or diphenyl phosphate.

膦酸(Phosphonic acid)衍生物例如膦酸二甲酯、膦酸-二-n-丁酯、苯基膦酸、膦酸二苯酯、膦酸二苄酯等膦酸酯等。Phosphonic acid derivatives such as chromic acid esters such as dimethyl phosphonate, di-n-butyl phosphonate, phenylphosphonic acid, diphenyl phosphonate, dibenzyl phosphonate, and the like.

次膦酸(Phosphinic acid)衍生物例如,苯基次膦酸等次膦酸酯。Phosphinic acid derivatives such as phosphinates such as phenylphosphinic acid.

(E)成份可單獨使用1種,或將2種以上合併使用亦可。(E) The components may be used singly or in combination of two or more.

(E)成份,相對於(A)成份100質量份,通常為使用0.01~5.0質量份之範圍。The component (E) is usually used in an amount of 0.01 to 5.0 parts by mass based on 100 parts by mass of the component (A).

本發明之正型光阻組成物,可再配合需要適當添加具有混合性之添加劑,例如可改良光阻膜性能之加成樹脂,提昇塗覆性之界面活性劑、溶解抑制劑、可塑劑、安定劑、著色劑、光暈防止劑、染料等。The positive-type photoresist composition of the present invention can be further blended with an additive which is suitable for mixing, for example, an additive resin which can improve the properties of the photoresist film, a surfactant for improving coating properties, a dissolution inhibitor, a plasticizer, Stabilizers, colorants, halo inhibitors, dyes, etc.

本發明之正型光阻組成物,可將材料溶解於有機溶劑(以下亦稱為(S)成份)之方式製造。The positive resist composition of the present invention can be produced by dissolving a material in an organic solvent (hereinafter also referred to as (S) component).

(S)成份,只要可溶解所使用之各成份而形成均勻之溶液即可,例如可由以往作為化學增幅型光阻溶劑之公知溶劑中,適當的選擇1種或2種以上使用。The (S) component may be used as long as it is a solvent which can be used to form a uniform solution. For example, one or two or more kinds of the above-mentioned known solvents can be used as a chemically amplified resist solvent.

例如,γ-丁內酯等之內酯類;丙酮、甲基乙基酮、環庚酮、環己酮、甲基-n-戊酮、甲基異戊酮、2-庚酮等之酮類;乙二醇、二乙二醇、丙二醇、二丙二醇等之多元醇類;具有乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯,或二丙二醇單乙酸酯等酯鍵結之化合物、具有前述多元醇類或前述酯鍵結之化合物之單甲基醚、單乙基醚、單丙基醚、單丁基醚等之單烷基醚或具有單苯基醚等醚鍵結之化合物等多元醇類之衍生物[其中又以丙二醇單甲基醚乙酸酯(PGMEA)、丙二醇單甲基醚(PGME)為佳];二噁烷等環式醚類,或乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、酢酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等之酯類;苯甲醚、乙基苄基醚、甲酚甲基醚、二苯基醚、二苄基醚、苯乙醚、丁基苯基醚、乙基苯、二乙基苯、戊基苯、異丙基苯、甲苯、二甲苯、異丙基苯、三甲基苯等芳香族系有機溶劑等。For example, lactones such as γ-butyrolactone; ketones such as acetone, methyl ethyl ketone, cycloheptanone, cyclohexanone, methyl-n-pentanone, methyl isoamyl ketone, and 2-heptanone Polyols such as ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol, etc.; having ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoethyl An ester-bonded compound such as an acid ester, a monoalkyl ether having a monohydric ether, a monoethyl ether, a monopropyl ether, a monobutyl ether or the like having the above-mentioned polyol or the ester-bonded compound or having a single a derivative of a polyol such as an ether-bonded compound such as a phenyl ether [wherein propylene glycol monomethyl ether acetate (PGMEA) or propylene glycol monomethyl ether (PGME) is preferred]; a ring type such as dioxane Ethers, or methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl phthalate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethoxypropionic acid Esters of ethyl esters, etc.; anisole, ethylbenzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenethyl ether, butylphenyl ether, ethylbenzene, diethylbenzene Pentylbenzene Cumene, toluene, xylene, cumene, mesitylene and the like, aromatic organic solvents.

該些有機溶劑可單獨使用亦可,或以2種以上之混合溶劑形式使用亦可。These organic solvents may be used singly or in the form of a mixture of two or more.

其中又以丙二醇單甲基醚乙酸酯(PGMEA)、丙二醇單甲基醚(PGME)、EL為佳。Among them, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), and EL are preferred.

又,PGMEA與極性溶劑混合所得之混合溶劑亦為佳。其添加比(質量比),可考慮PGMEA與極性溶劑之相溶性等再作適當決定即可,較佳為1:9~9:1,更佳為2:8~8:2之範圍內為佳。Further, a mixed solvent obtained by mixing PGMEA with a polar solvent is also preferred. The addition ratio (mass ratio) may be appropriately determined by considering the compatibility of PGMEA with a polar solvent, and is preferably in the range of 1:9 to 9:1, more preferably 2:8 to 8:2. good.

更具體而言,例如添加極性溶劑之EL時,PGMEA:EL之質量比,較佳為1:9~9:1,更佳為2:8~8:2。又,添加極性溶劑之PGME時,PGMEA:PGME之質量比,較佳為1:9~9:1,更佳為2:8~8:2,最佳為3:7~7:3。More specifically, for example, when the EL of the polar solvent is added, the mass ratio of PGMEA:EL is preferably 1:9 to 9:1, more preferably 2:8 to 8:2. Further, when the PGME of the polar solvent is added, the mass ratio of PGMEA:PGME is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, most preferably 3:7 to 7:3.

又,(S)成份,,其他例如以使用PGMEA及EL中所選擇之至少1種與γ-丁內酯之混合溶劑亦佳。此時,混合比例,以前者與後者之質量比,較佳為70:30~95:5。Further, the (S) component is preferably a mixed solvent of at least one selected from the group consisting of PGMEA and EL and γ-butyrolactone. At this time, the mixing ratio, the mass ratio of the former to the latter, is preferably from 70:30 to 95:5.

(S)成份之使用量並未有特別限定,其可配合可塗佈於基板等之濃度,適當地設定塗佈膜厚度,一般而言,光阻組成物之固形成份濃度可使用於1~20質量%,較佳為2~15質量%之範圍內。The amount of the component (S) used is not particularly limited, and the thickness of the coating film can be appropriately set in accordance with the concentration which can be applied to a substrate or the like. In general, the solid content concentration of the photoresist composition can be used for 1 to 20% by mass, preferably in the range of 2 to 15% by mass.

上述本發明之正型光阻組成物,及添加於該正型光阻組成物中之(A1)成份,為以往所未知之新穎物質。The positive-type photoresist composition of the present invention and the component (A1) added to the positive-type photoresist composition are novel materials which have not been known in the past.

又,本發明之正型光阻組成物,可於基板等支撐體上形成良好密著性之光阻膜。又,本發明之正型光阻組成物,具有良好之感度、焦點景深寬度(DOF)、曝光量寬容度(EL)等之微影蝕刻特性。又,因具有優良之遮罩重現性(例如遮罩缺陷因子-(MEF)),故可形成光阻圖型,且具有良好之光阻圖型之形成形狀(例如形成通孔圖型之際之該通孔的正圓性等)。EL為,變化曝光量下進行曝光之際,於標靶尺寸偏移為於一定範圍內之尺寸時,仍可以形成光阻圖型之曝光量範圍,即可得到忠實反應遮罩圖型之光阻圖型的曝光量範圍之意,EL寬容度,其數值越大時,伴隨曝光量變動所造成之圖型尺寸變化量越小,而可提高製程之寬容度,而為較佳。DOF為,同一曝光量中,將焦點上下移動進行曝光之際,對標靶尺寸之偏移於一定範圍內之尺寸下,可形成光阻圖型之焦點景深之範圍,即可得到忠實反應遮罩圖型之光阻圖型之範圍,其數值越大越佳。Further, the positive resist composition of the present invention can form a photoresist film having good adhesion on a support such as a substrate. Further, the positive resist composition of the present invention has lithographic etching characteristics such as good sensitivity, focal depth of field (DOF), and exposure latitude (EL). Moreover, since it has excellent mask reproducibility (for example, mask defect factor-(MEF)), a photoresist pattern can be formed and a shape of a good photoresist pattern can be formed (for example, a via pattern is formed). The roundness of the through hole, etc.). When EL is used for exposure under varying exposure, when the target size shift is within a certain range, the exposure range of the resist pattern can still be formed, and the light of the faithful reaction mask pattern can be obtained. The range of the exposure amount of the resistive pattern, and the EL latitude, the larger the value, the smaller the amount of change in the pattern size caused by the variation in the amount of exposure, and the latitude of the process can be improved, which is preferable. DOF is the same exposure amount, when the focus is moved up and down for exposure, and the target size is shifted within a certain range, the range of the focal depth of the resist pattern can be formed, and the faithful response can be obtained. The larger the range of the resist pattern of the mask pattern, the better.

可得到上述効果之理由仍未明瞭,其主要原因,推測為結構單位(a0-1)中,於較長側鏈之末端,具有極性基之含有-SO2 -之環式基,而可使(B)成份之分布達到均勻,因而可提高微影蝕刻特性。又,結構單位(a0-2)中,因具有較低沸點之脂肪族單環式基,顯影處理及洗滌後,曝光所產生之分解產物不易殘留於光阻膜中,因而可提高微影蝕刻特性。The reason why the above-mentioned effects can be obtained is still unclear. The main reason is that in the structural unit (a0-1), a terminal group having a polar group containing -SO 2 - at the end of the longer side chain can be used. (B) The distribution of the components is uniform, thereby improving the lithographic etching characteristics. Further, in the structural unit (a0-2), since the aliphatic monocyclic group having a lower boiling point is formed, the decomposition product generated by the exposure after the development treatment and washing is less likely to remain in the photoresist film, thereby improving the lithography etching. characteristic.

<光阻圖型之形成方法><Formation method of photoresist pattern>

本發明之光阻圖型之形成方法,為包含於支撐體上,使用前述本發明之正型光阻組成物形成光阻膜之步驟、使前述光阻膜曝光之步驟,及使前述光阻膜顯影以形成光阻圖型之步驟。The method for forming a photoresist pattern of the present invention comprises the steps of forming a photoresist film using the positive photoresist composition of the present invention on the support, exposing the photoresist film, and forming the photoresist The step of developing the film to form a photoresist pattern.

本發明之光阻圖型之形成方法,例如可依以下之方式進行。The method for forming the photoresist pattern of the present invention can be carried out, for example, in the following manner.

即,首先使用旋轉塗佈器等將前述本發明之正型光阻組成物塗佈於支撐體上,於80~150℃之溫度條件下,進行40~120秒鐘,較佳為60~90秒鐘之預燒焙(Post Apply Bake(PAB))以形成光阻膜。隨後對其例如使用ArF曝光裝置、電子線描繪裝置、EUV曝光裝置等曝光裝置,介由遮罩圖型進行曝光,或不介由遮罩圖型以電子線直接照射進行描繪等選擇性曝光後,於80~150℃之溫度條件下,實施40~120秒鐘,較佳為60~90秒鐘之PEB(曝光後加熱;Post Exposure Bake)。其次將其使用鹼顯影液,例如使用0.1~10質量%氫氧化四甲基銨(TMAH)水溶液進行顯影處理,較佳為使用純水進行水洗、乾燥。又,必要時,可於上述顯影處理後進行燒焙處理(後燒焙;Post Bake)亦可。如此,即可得到忠實反應遮罩圖型之光阻圖型。That is, first, the positive resist composition of the present invention is applied onto a support by a spin coater or the like, and is subjected to a temperature of 80 to 150 ° C for 40 to 120 seconds, preferably 60 to 90. Post-Bake (PAB) is formed in seconds to form a photoresist film. Then, for example, an exposure apparatus such as an ArF exposure apparatus, an electron beam drawing apparatus, or an EUV exposure apparatus is used, and exposure is performed by a mask pattern, or a selective exposure is performed by direct irradiation with an electron beam without a mask pattern. The PEB (Post Exposure Bake) is carried out at a temperature of 80 to 150 ° C for 40 to 120 seconds, preferably 60 to 90 seconds. Next, it is subjected to development treatment using an alkali developer, for example, an aqueous solution of 0.1 to 10% by mass of tetramethylammonium hydroxide (TMAH), preferably washed with pure water and dried. Further, if necessary, baking treatment (post-baking; Post Bake) may be performed after the above development treatment. In this way, a photoresist pattern of a faithful response mask pattern can be obtained.

支撐體並未有特別限定,其可使用以往公知之物品,例如電子零件用之基板,或於其上形成特定配線圖型之物品等。更具體而言,例如矽晶圓、銅、鉻、鐵、鋁等金屬製之基板或,玻璃基板等。電路圖型之材料,例如可使用銅、鋁、鎳、金等。The support is not particularly limited, and conventionally known articles such as a substrate for an electronic component or an article on which a specific wiring pattern is formed may be used. More specifically, for example, a substrate made of a metal such as a germanium wafer, copper, chromium, iron, or aluminum, or a glass substrate. As the material of the circuit pattern, for example, copper, aluminum, nickel, gold, or the like can be used.

又,支撐體,例如亦可於上述基板上,設置無機系及/或有機系之膜。無機系之膜,例如無機抗反射膜(無機BARC)等。有機系之膜,例如有機抗反射膜(有機BARC)等。Further, for the support, for example, an inorganic or/or organic film may be provided on the substrate. An inorganic film such as an inorganic antireflection film (inorganic BARC). Organic film, such as organic anti-reflective film (organic BARC).

曝光所使用之波長,並未有特別限定,其可使用ArF準分子雷射、KrF準分子雷射、F2 準分子雷射、EUV(極紫外線)、VUV(真空紫外線)、EB(電子線)、X線、軟X線等放射線進行。前述光阻組成物,以對KrF準分子雷射、ArF準分子雷射、EB或EUV,特別是對ArF準分子雷射為有效。The wavelength used for the exposure is not particularly limited, and an ArF excimer laser, a KrF excimer laser, an F 2 excimer laser, an EUV (very ultraviolet ray), a VUV (vacuum ultraviolet ray), or an EB (electron line) can be used. ), X-ray, soft X-ray and other radiation. The aforementioned photoresist composition is effective for KrF excimer laser, ArF excimer laser, EB or EUV, especially for ArF excimer laser.

光阻膜之曝光方法,可於空氣或氮氣等惰性氣體中進行之通常曝光(乾曝光)亦可,浸潤式曝光(Liquid Immersion Lithography)亦可。The exposure method of the photoresist film may be performed by usual exposure (dry exposure) in an inert gas such as air or nitrogen, or by liquid immersion exposure (Liquid Immersion Lithography).

浸潤式曝光,為預先於光阻膜與曝光裝置之最下位置的透鏡間,充滿具有折射率較空氣之折射率為大之溶劑(浸潤媒體),並於該狀態下進行曝光(浸潤曝光)之曝光方法。The immersion exposure is a solvent (wetting medium) having a refractive index higher than that of air, which is pre-exposed between the photoresist film and the lowermost position of the exposure device, and is exposed (immersion exposure) in this state. Exposure method.

浸潤媒體,以使用具有較空氣之折射率為大,且較被曝光之光阻膜所具有之折射率為小之折射率的溶劑為佳。該溶劑之折射率,只要為前述範圍內時,並未有特別限制。It is preferred to wet the medium to use a solvent having a refractive index larger than that of air and having a refractive index smaller than that of the exposed photoresist film. The refractive index of the solvent is not particularly limited as long as it is within the above range.

具有較空氣之折射率為大,且較前述光阻膜之折射率為小之折射率的溶劑,例如,水、氟系惰性液體、矽系溶劑、烴系溶劑等。A solvent having a refractive index larger than that of air and having a refractive index smaller than that of the resist film, for example, water, a fluorine-based inert liquid, an oxime-based solvent, a hydrocarbon-based solvent, or the like.

氟系惰性液體之具體例如,以含有C3 HCl2 F5 、C4 F9 OCH3 、C4 F9 OC2 H5 、C5 H3 F7 等之氟系化合物為主成份之液體等,又以沸點為70~180℃者為佳,以80~160℃者為更佳。氟系惰性液體為具有上述範圍之沸點的液體時,於曝光結束後,可以簡便之方法去除浸潤用之媒體,而為較佳。Specific examples of the fluorine-based inert liquid include a liquid containing a fluorine-based compound such as C 3 HCl 2 F 5 , C 4 F 9 OCH 3 , C 4 F 9 OC 2 H 5 , C 5 H 3 F 7 or the like as a main component. Further, those having a boiling point of 70 to 180 ° C are preferred, and those having a boiling point of 80 to 160 ° C are more preferred. When the fluorine-based inert liquid is a liquid having a boiling point within the above range, it is preferred to remove the medium for wetting in a simple manner after the completion of the exposure.

氟系惰性液體,特別是以烷基中之氫原子全部被氟原子取代所得之全氟烷基化合物為佳。全氟烷基化合物,具體而言,例如全氟烷基醚化合物或全氟烷基胺化合物等。The fluorine-based inert liquid is particularly preferably a perfluoroalkyl compound obtained by substituting all hydrogen atoms in the alkyl group with fluorine atoms. The perfluoroalkyl compound is specifically, for example, a perfluoroalkyl ether compound or a perfluoroalkylamine compound.

又,更具體而言,前述全氟烷基醚化合物,例如全氟(2-丁基-四氫呋喃)(沸點102℃),前述全氟烷基胺化合物,例如全氟三丁基胺(沸點174℃)等。Further, more specifically, the perfluoroalkyl ether compound is, for example, perfluoro(2-butyl-tetrahydrofuran) (boiling point: 102 ° C), and the above perfluoroalkylamine compound, for example, perfluorotributylamine (boiling point 174) °C) and so on.

浸潤式媒體,就費用、安全性、環境問題、廣泛性等觀點,以使用水為佳。Infiltrating media, in terms of cost, safety, environmental issues, and generality, it is better to use water.

<高分子化合物><polymer compound>

本發明之高分子化合物為,具有下述通式(a0-1)所表示之結構單位(a0-1),及下述通式(a0-2)所表示之結構單位(a0-2)之高分子化合物。The polymer compound of the present invention has a structural unit (a0-1) represented by the following formula (a0-1) and a structural unit (a0-2) represented by the following formula (a0-2). Polymer compound.

本發明之高分子化合物之説明,為與前述本發明之正型光阻組成物之(A1)成份中所説明者為相同之內容。The description of the polymer compound of the present invention is the same as that described for the component (A1) of the positive resist composition of the present invention.

[式中,R1 為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R2 為2價之鍵結基,R3 ,為其環骨架中含有-SO2 -之環式基,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R21 為分支鏈狀之烷基;R22 ,為可與該R22 鍵結之碳原子共同形成脂肪族單環式基之基]。In the formula, R 1 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms, R 2 is a divalent bond group, and R 3 is a ring skeleton containing -SO a cyclic group of 2 -, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; R 21 is a branched alkyl group; and R 22 is a bondable with R 22 The bonded carbon atoms together form the base of the aliphatic monocyclic group].

[實施例][Examples]

以下,將以實施例對本發明作更詳細之說明,本發明並不受該些例示所限定。In the following, the invention will be described in more detail by way of examples, and the invention is not limited by the examples.

本實施例中,化學式(1)所表示之單位記載為「化合物(1)」,其他式所表示之化合物亦為相同之記載。In the present embodiment, the unit represented by the chemical formula (1) is described as "compound (1)", and the compounds represented by the other formulae are also the same.

[單體合成例1(化合物(1)之合成)][Monomer Synthesis Example 1 (Synthesis of Compound (1))]

後述聚合物合成例所使用之化合物(1)為依以下之順序合成。The compound (1) used in the polymer synthesis example described later is synthesized in the following order.

在氮雰圍下、500ml之3口燒瓶中,加入醇(1)20g(105.14mmol)、乙基二異丙基胺基碳二醯亞胺(EDCI)鹽酸鹽30.23g(157.71mmol)及二甲基胺基吡啶(DMAP)0.6g(5mmol)之THF溶液300ml,於其中,氷冷下(0℃)加入前驅物(1)16.67g(115.66mmol)後,於室溫下攪拌12小時。In a 500 ml three-necked flask under nitrogen atmosphere, 20 g (105.14 mmol) of alcohol (1), 30.23 g (157.71 mmol) of ethyl diisopropylaminocarbodiimide (EDCI) hydrochloride and two were added. 300 ml of a solution of methylaminopyridine (DMAP) 0.6 g (5 mmol) in THF was added thereto, and 16.67 g (115.66 mmol) of the precursor (1) was added thereto under ice cooling (0 ° C), followed by stirring at room temperature for 12 hours.

以薄層色層分析法(TLC)確認原料消失後,加入50ml水使反應停止。將反應溶劑減壓濃縮,使用乙酸乙酯萃取3次所得之有機層,依序以水、飽和碳酸氫鈉、1N─HClaq順序洗淨。減壓下,使餾除溶劑所得之產物乾燥後,得化合物(1)。After confirming the disappearance of the starting material by thin layer chromatography (TLC), 50 ml of water was added to stop the reaction. The reaction solvent was concentrated under reduced pressure, and the obtained organic layer was extracted three times with ethyl acetate, and washed sequentially with water, saturated sodium hydrogen carbonate and 1N-HClaq. The product obtained by distilling off the solvent was dried under reduced pressure to give Compound (1).

所得化合物(1)之機器分析結果,係如以下所示。The results of the machine analysis of the obtained compound (1) are shown below.

1 H-NMR(CDCl3 ,400MHz):δ(ppm)=6.22(s,1H,Ha ),5.70(s,1H,Hb ),4.71-4.85(m,2H,Hc,d ),4.67(s,2H,Hk ),3.40-3.60(m,2H,He,f ),2.58-2.70(m,1H,Hg ),2.11-2.21(m,2H,Hh ),2.00(s,3H,Hi ),1.76-2.09(m,2H,Hj )‧ 1 H-NMR (CDCl 3 , 400 MHz): δ (ppm) = 6.22 (s, 1H, H a ), 5.70 (s, 1H, H b ), 4.71-4.85 (m, 2H, H c, d ), 4.67(s,2H,H k ), 3.40-3.60(m,2H,H e,f ), 2.58-2.70(m,1H,H g ),2.11-2.21(m,2H,H h ), 2.00 ( s, 3H, H i ), 1.76-2.09 (m, 2H, H j ) ‧

[單體合成例2(化合物(2)之合成)][Monomer Synthesis Example 2 (Synthesis of Compound (2))]

後述聚合物合成例所使用之化合物(2)為依以下順序合成。The compound (2) used in the polymer synthesis example described later was synthesized in the following order.

於具備有溫度計、冷卻管及攪拌裝置之2L之三口燒瓶中,加入二醇酸37.6g(494mmol)、DMF700mL、碳酸鉀86.5g(626mmol)、碘化鉀28.3g(170mmol),於室溫下攪拌30分鐘。隨後,緩緩加入氯乙酸2-甲基-2-金剛烷酯100g(412mmol)之二甲基甲醯胺300mL溶液。升溫至40℃,攪拌4小時。反應結束後,加入二乙基醚2000mL後過濾,所得溶液以蒸餾水500mL洗淨3次。以甲苯(300mL)‧庚烷(200mL)之混合溶液進行晶析,得目的物(2-(2-(2-甲基-2-金剛烷基氧基)-2-側氧基乙氧基)-2-側氧基乙醇)之無色固體78g(產率67%、GC純度99%)。37.6 g (494 mmol) of glycolic acid, 700 mL of DMF, 86.5 g (626 mmol) of potassium carbonate, and 28.3 g (170 mmol) of potassium iodide were added to a 2-liter three-necked flask equipped with a thermometer, a cooling tube, and a stirring apparatus, and stirred at room temperature. minute. Subsequently, a solution of 100 g (412 mmol) of 2-methyl-2-adamantyl chloroacetate in 300 mL of dimethylformamide was slowly added. The temperature was raised to 40 ° C and stirred for 4 hours. After completion of the reaction, 2000 mL of diethyl ether was added, followed by filtration, and the resulting solution was washed three times with 500 mL of distilled water. Crystallization was carried out in a mixed solution of toluene (300 mL) ‧ heptane (200 mL) to give the title compound (2-(2-(2-methyl-2-adamantyloxy)-2- oxy ethoxy) (2-oxoethanol) 78 g of a colorless solid (yield 67%, GC purity: 99%).

所得化合物之機器分析結果,係如以下所示。The results of the machine analysis of the obtained compound are shown below.

1 H-NMR:1.59(d,2H,J=12.5Hz),1.64(s,3H),1.71~1.99(m,10H),2.29(m,2H),2.63(t,1H,J=5.2Hz),4.29(d,2H,J=5.2Hz),4.67(s,2H)。 1 H-NMR: 1.59 (d, 2H, J = 12.5 Hz), 1.64 (s, 3H), 1.71 to 1.99 (m, 10H), 2.29 (m, 2H), 2.63 (t, 1H, J = 5.2 Hz) ), 4.29 (d, 2H, J = 5.2 Hz), 4.67 (s, 2H).

13 C-NMR:22.35,26.56,27.26,32.97,34.54,36.29,38.05,60.54,61.50,89.87,165.97,172.81。 13 C-NMR: 22.35, 26.56, 27.26, 32.97, 34.54, 36.29, 38.05, 60.54, 61.50, 89.87, 165.97, 172.81.

GC-MS:282(M+,0.02%),165(0.09%),149(40%),148(100%),133(22%),117(2.57%),89(0.40%)。GC-MS: 282 (M+, 0.02%), 165 (0.09%), 149 (40%), 148 (100%), 133 (22%), 117 (2.57%), 89 (0.40%).

由上述結果得知,確認所得化合物為2-(2-(2-甲基-2-金剛烷基氧基)-2-側氧基乙氧基)-2-側氧基乙醇。From the above results, it was confirmed that the obtained compound was 2-(2-(2-methyl-2-adamantyloxy)-2-oxoethoxyethoxy)-2-oxoethanol.

隨後,於具備有溫度計、冷卻管及攪拌裝置之2L之三口燒瓶中,加入2-(2-(2-甲基-2-金剛烷基氧基)-2-側氧基乙氧基)-2-側氧基乙醇165g(584mmol)、THF2000mL、三乙胺105mL(754mmol)、p-甲氧基酚0.165g(1000ppm),使其溶解。溶解後,於氷浴下緩緩加入甲基丙烯醯氯62.7mL(648mmol)後,升溫至室溫,攪拌3小時。反應結束後,加入二乙基醚1000mL,以蒸餾水200mL洗淨5次。濃縮萃取液,得目的物(化合物(2))之無色液體198g(產率97%、GC純度99%)。Subsequently, 2-(2-(2-methyl-2-adamantyloxy)-2-oxoethoxyethoxy) was added to a 2-L three-necked flask equipped with a thermometer, a cooling tube and a stirring device. 165 g (584 mmol) of 2-sided oxyethanol, 2000 mL of THF, 105 mL (754 mmol) of triethylamine, and 0.165 g (1000 ppm) of p-methoxyphenol were dissolved. After the dissolution, 62.7 mL (648 mmol) of methacrylic acid ruthenium chloride was gradually added to the ice bath, and the mixture was heated to room temperature and stirred for 3 hours. After completion of the reaction, 1000 mL of diethyl ether was added, and the mixture was washed 5 times with 200 mL of distilled water. The extract was concentrated to give 198 g (yield: 97%, GC purity: 99%) as a colorless liquid of the object (the compound (2)).

所得化合物(2)之機器分析結果,係如以下所示。The results of the machine analysis of the obtained compound (2) are shown below.

1 H-NMR:1.58(d,J=12.5Hz,2H),1.63(s,3H),1.71~1.89(m,8H),1.98(s,3H),2.00(m,2H),2.30(m,2H),4.62(s,2H),4.80(s,2H),5.66(m,1H),6.23(m,1H)。 1 H-NMR: 1.58 (d, J = 12.5 Hz, 2H), 1.63 (s, 3H), 1.71 to 1.89 (m, 8H), 1.98 (s, 3H), 2.00 (m, 2H), 2.30 (m) , 2H), 4.62 (s, 2H), 4.80 (s, 2H), 5.66 (m, 1H), 6.23 (m, 1H).

13 C-NMR:18.04,22.15,26.42,27.14,32.82,34.38,36.11,37.92,60.44,61.28,89.42,126.79,135.18,165.61,166.30,167.20。 13 C-NMR: 18.04, 22.15, 26.42, 27.14, 32.82, 34.38, 36.11, 37.92, 60.44, 61.28, 89.42, 126.79, 135.18, 165.61, 166.30, 167.20.

GC-MS:350(M+,1.4%),206(0.13%),149(47%),148(100%),133(20%),69(37%)。GC-MS: 350 (M+, 1.4%), 206 (0.13%), 149 (47%), 148 (100%), 133 (20%), 69 (37%).

[聚合物合成例1][Polymer Synthesis Example 1]

於設置有溫度計、迴流管、氮氣導入管之多口燒瓶中,使15.80g(50.00mmol)之化合物(1)、5.83g(16.67mmol)之化合物(2)、4.67g(20.83mmol)之化合物(4)、3.93g(20.00mmol)之化合物(5)溶解於55.71g之甲基乙基酮(MEK)中。於該溶液中,添加聚合起使劑之偶氮二異丁酸二甲酯(V-601)8.08mmol,使其溶解。將其將其於氮氣雰圍下,以3小時時間緩緩滴入溶解有25.66g(97.92mol)之化合物(3)的MEK30.33g、並加熱至80℃所得之溶液中。滴入結束後,將反應液加熱攪拌2小時,隨後,將反應液冷卻至室溫。將所得之反應聚合液滴入大量之n-庚烷中進行析出聚合物之操作,將沈澱之白色粉體濾除,依序使用n-庚烷、異丙基醇、甲醇之順序洗淨、乾燥,得35g之目的物之高分子化合物1。In a multi-necked flask equipped with a thermometer, a reflux tube, and a nitrogen introduction tube, 15.80 g (50.00 mmol) of the compound (1), 5.83 g (16.67 mmol) of the compound (2), and 4.67 g (20.83 mmol) of the compound were obtained. (4) 3.93 g (20.00 mmol) of the compound (5) was dissolved in 55.71 g of methyl ethyl ketone (MEK). To the solution, 8.08 mmol of dimethyl azobisisobutyrate (V-601) of a polymerization initiator was added and dissolved. This was slowly dropped into a solution obtained by dissolving 25.66 g (97.92 mol) of the compound (3) of MEK (30.33 g) under a nitrogen atmosphere for 3 hours and heating to 80 °C. After the completion of the dropwise addition, the reaction mixture was heated and stirred for 2 hours, and then the reaction liquid was cooled to room temperature. The obtained reaction polymerization is dropped into a large amount of n-heptane to precipitate a polymer, and the precipitated white powder is filtered off, and sequentially washed with n-heptane, isopropyl alcohol and methanol. After drying, 35 g of the target compound 1 was obtained.

該高分子化合物1,以GPC測定所求得之標準聚苯乙烯換算之質量平均分子量(Mw)為10,500,分子量分散度(Mw/Mn)為1.75。又,以碳13核磁共振圖譜(600MHz_13 C-NMR)所求得之共聚合組成比(構造式中之各結構單位之比例(莫耳比))為,l/m/n/o/p=34.3/9.4/33.0/11.0/12.3。The polymer compound 1 had a mass average molecular weight (Mw) of 10,500 in terms of standard polystyrene measured by GPC measurement, and a molecular weight dispersion degree (Mw/Mn) of 1.75. Further, the copolymerization composition ratio (the ratio of each structural unit (mole ratio) in the structural formula) obtained by carbon 13 nuclear magnetic resonance spectrum (600 MHz_ 13 C-NMR) was, l/m/n/o/p. =34.3/9.4/33.0/11.0/12.3.

[聚合物合成例2~7][Polymer Synthesis Examples 2 to 7]

參考合成例1之記載,變更單體種類、添加比例、聚合起始劑之使用量,以合成高分子化合物2~7。With reference to the description of Synthesis Example 1, the monomer type, the addition ratio, and the amount of the polymerization initiator used were changed to synthesize the polymer compounds 2 to 7.

(Mw=11,900、Mw/Mn=2.07、l/m/n/o/p=34.3/9.7/24.1/19.5/12.4(莫耳比))(Mw=11,900, Mw/Mn=2.07, l/m/n/o/p=34.3/9.7/24.1/19.5/12.4 (Morby))

(Mw=7,500、Mw/Mn=1.42、l/m/n/o/p=36.4/21.9/15.9/14.0/11.8(莫耳比))(Mw=7,500, Mw/Mn=1.42, l/m/n/o/p=36.4/21.9/15.9/14.0/11.8 (Morby))

(Mw=8,400、Mw/Mn=1.56、l/m/n/o/p=35.2/22.3/16.1/13.8/12.6(莫耳比))(Mw=8,400, Mw/Mn=1.56, l/m/n/o/o=35.2/22.3/16.1/13.8/12.6 (Morby))

(Mw=8,900、Mw/Mn=1.64、l/m/n/o=34.7/11.1/42.6/11.6(莫耳比))。(Mw = 8,900, Mw / Mn = 1.64, l / m / n / o = 34.7 / 11.1/42.6 / 11.6 (mr ratio)).

(Mw=7,500、Mw/Mn=1.60、l/m/n=39.8/41.2/19.0(莫耳比))。(Mw = 7,500, Mw / Mn = 1.60, l / m / n = 39.8 / 41.2 / 19.0 (mr ratio)).

(Mw=6,700、Mw/Mn=1.58、l/m/n=40.4/38.7/20.9(莫耳比))。(Mw = 6,700, Mw / Mn = 1.58, l / m / n = 40.4 / 38.7 / 20.9 (mr ratio)).

[實施例1~5、比較例1~2][Examples 1 to 5 and Comparative Examples 1 and 2]

依表1所示將各成份混合、溶解以製造正型光阻組成物。The components were mixed and dissolved as shown in Table 1 to produce a positive photoresist composition.

表1中,[]內之數值為表示添加量(質量份)。又,表1中之記號分別如以下所示內容。In Table 1, the numerical value in [] indicates the amount of addition (parts by mass). Further, the symbols in Table 1 are as follows.

(A)-1:前述高分子化合物1。(A)-1: The above polymer compound 1.

(A)-2:前述高分子化合物2。(A)-2: The above polymer compound 2.

(A)-3:前述高分子化合物3。(A)-3: The above polymer compound 3.

(A)-4:前述高分子化合物4。(A)-4: The above polymer compound 4.

(A)-5:前述高分子化合物6。(A)-5: The above polymer compound 6.

(A)-6:前述高分子化合物5。(A)-6: The above polymer compound 5.

(A)-7:前述高分子化合物7。(A)-7: The above polymer compound 7.

(B)-1:下述化學式(B)-1所表示之化合物。(B)-1: a compound represented by the following chemical formula (B)-1.

(D)-1:三-n-戊基胺。(D)-1: Tri-n-pentylamine.

(S)-1:PGMEA/PGME=6/4(質量比)之混合溶劑。(S)-1: a mixed solvent of PGMEA/PGME=6/4 (mass ratio).

(S)-2:γ-丁內酯。(S)-2: γ-butyrolactone.

(合成方法於後敘述)(Synthesis method will be described later)

使用所得之光阻組成物,依以下順序形成光阻圖型,並評估其微影蝕刻物性。Using the obtained photoresist composition, a photoresist pattern was formed in the following order, and the lithographic etching property was evaluated.

[光阻圖型之形成-1][Formation of Photoresist Pattern-1]

將有機系抗反射膜組成物「ARC29A」(商品名,普力瓦科技公司製)使用旋轉塗佈器塗佈於12英吋之矽晶圓上,熱壓板上進行205℃、60秒鐘之燒焙、乾燥結果,形成膜厚89nm之有機系抗反射膜。將上述所製得之光阻組成物分別使用旋轉塗佈器塗佈於該抗反射膜上,於熱壓板上,以90℃、60秒鐘進行預燒焙(PAB)處理,經乾燥,形成膜厚100nm之光阻膜。The organic anti-reflection film composition "ARC29A" (trade name, manufactured by Puliwa Co., Ltd.) was applied onto a 12-inch silicon wafer using a spin coater, and 205 ° C, 60 seconds on a hot plate. As a result of baking and drying, an organic antireflection film having a film thickness of 89 nm was formed. The photoresist composition prepared above was applied onto the antireflection film by using a spin coater, and subjected to prebaking (PAB) treatment at 90 ° C for 60 seconds on a hot plate, and dried. A photoresist film having a film thickness of 100 nm was formed.

隨後,將保護膜形成用塗佈液「TILC-057」(商品名、東京應化工業股份有限公司製)使用旋轉塗佈器塗佈於前述光阻膜上,經90℃、60秒鐘加熱結果,形成膜厚35nm之頂部塗覆。Then, the coating liquid for forming a protective film "TILC-057" (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied onto the resist film using a spin coater, and heated at 90 ° C for 60 seconds. As a result, a top coat having a film thickness of 35 nm was formed.

隨後,使用ArF浸潤式曝光裝置NSR-S609B(理光公司製;NA(開口數)=1.07、2/3輪帶照明、縮小倍率1/4倍、浸潤媒體:水),將ArF準分子雷射(193nm)介由使用通孔直徑90nm/間距157.5nm之接觸孔圖型(以下,亦稱為CH圖型)作為標靶之遮罩圖型進行選擇性照射。Subsequently, an ArF excimer laser NSR-S609B (manufactured by Ricoh Co., Ltd.; NA (number of openings) = 1.07, 2/3 wheel illumination, 1/4 magnification reduction, infiltration media: water) was used, and an ArF excimer laser was used. (193 nm) was selectively irradiated by using a contact hole pattern (hereinafter, also referred to as CH pattern) having a via diameter of 90 nm/pitch of 157.5 nm as a target mask pattern.

隨後,進行80℃、60秒鐘之PEB處理,再於23℃下,以2.38質量%之TMAH水溶液NMD-3(東京應化工業股份有限公司製)進行60秒鐘顯影,其後,再以30秒鐘,使用純水進行水洗,進行振動乾燥。Subsequently, the PEB treatment at 80 ° C for 60 seconds was carried out, and at 23 ° C, a 2.38 mass % TMAH aqueous solution NMD-3 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was used for development for 60 seconds, and thereafter, After 30 seconds, it was washed with pure water and subjected to vibration drying.

其結果,無論任一例示中,皆形成有以通孔直徑90nm、間距157.5nm之CH圖型形成圖型。As a result, in any of the examples, a pattern of a CH pattern having a via diameter of 90 nm and a pitch of 157.5 nm was formed.

[正圓性評估][Positive roundness assessment]

使用測長SEM(日立製作所公司製,製品名:S-9220),由上方觀察所形成之CH圖型,對各CH圖型中之25個通孔,以24方向測定由該通孔之中心至外緣之距離,由其結果算出標準偏差(σ)之3倍值(3σ)。依此方式所求得之3σ,其數值越小表示比少該通孔之正圓性越高之意。其結果係如表2所示。Using a length measuring SEM (manufactured by Hitachi, Ltd., product name: S-9220), the CH pattern formed by observing from above, the center of the through hole was measured in 24 directions for 25 through holes in each CH pattern. The distance to the outer edge is calculated from the result by a factor of three (3σ) of the standard deviation (σ). The smaller the value of 3σ obtained in this way, the smaller the meaning of the roundness of the through hole. The results are shown in Table 2.

由上述結果明確得知,實施例1~5之光阻組成物與比較例1~2相比較時,所形成之通孔圖型具有較高之正圓性。From the above results, it is clear that when the photoresist compositions of Examples 1 to 5 are compared with Comparative Examples 1 and 2, the formed via pattern has a high roundness.

[光阻圖型之形成-2][Formation of photoresist pattern-2]

使用實施例1~2及比較例1之光阻組成物,依上述[光阻圖型之形成-1]相同方法,製得通孔直徑90nm(間距為157.5nm)之CH圖型。形成該CH圖型之際的最佳EOP係如表3所示。Using the photoresist compositions of Examples 1 and 2 and Comparative Example 1, a CH pattern having a via diameter of 90 nm (pitch of 157.5 nm) was obtained in the same manner as in the above [Formation of Photoresist Pattern Type-1]. The best EOP system for forming this CH pattern is shown in Table 3.

[焦點景深寬度(DOF)][Focus Depth of Field Width (DOF)]

評估上述通孔直徑為90nm之CH圖型中之焦點景深寬度(DOF)。The focal depth of field (DOF) in the CH pattern with the above-mentioned through hole diameter of 90 nm was evaluated.

於上述EOP中,將焦點適度地上下移動,則形成與上述相同之光阻圖型,求取製得通孔圖型之形狀的範圍之焦點景深之寬度(μm)作為「Open」。其結果係如表3所示。In the EOP described above, when the focus is appropriately moved up and down, the same photoresist pattern as described above is formed, and the width (μm) of the depth of focus of the range in which the shape of the through-hole pattern is obtained is obtained as "Open". The results are shown in Table 3.

[遮罩缺陷因子一(MEF)][Mask Defect Factor One (MEF)]

遮罩圖型,除使用通孔直徑之標靶尺寸分別為94nm、92nm、90nm、88nm、86nm之遮罩圖型(間距皆為157.5nm),使用上述所求得之Eop進行曝光以外,其他皆依上述[光阻圖型之形成1]相同方法形成接觸孔圖型。此時,使用標靶尺寸(nm)作為橫軸,使用各遮罩圖型所形成於光阻膜之通孔之口径(nm)斜度作為MEF算出。The mask pattern, except for the mask size of the through-hole diameters of 94 nm, 92 nm, 90 nm, 88 nm, and 86 nm (the pitch is 157.5 nm), the exposure is performed using the Eop obtained above, and the like. The contact hole pattern is formed in the same manner as in the above [Formation of the photoresist pattern 1]. At this time, the target size (nm) was used as the horizontal axis, and the diameter (nm) of the through hole formed in the photoresist film of each mask pattern was used as the MEF.

又,MEF,其數值越接近1時,其遮罩重現性越為良好之意。其結果係如表3所示。Moreover, the MEF whose value is closer to 1, the better the mask reproducibility. The results are shown in Table 3.

如表3所示般,本發明之實施例1~2之光阻組成物,與比較例1相比較時,顯示出良好之微影蝕刻特性。As shown in Table 3, the photoresist compositions of Examples 1 to 2 of the present invention exhibited good lithographic etching characteristics when compared with Comparative Example 1.

<(B)成份之合成例><Synthesis example of (B) component> [(B)-1之合成][Synthesis of (B)-1]

(i)於控制於20℃以下之甲烷磺酸(60.75g)中,少量添加氧化磷(8.53g)與2,6-二甲基酚(8.81g)與二苯基亞碸(12.2g)。將溫度控制於15~20℃中進行30分鐘熟成後,升溫至40℃,進行2小時之熟成。隨後,將反應液滴入冷卻至15℃以下之純水(109.35g)中。滴入結束後,加入二氯甲烷(54.68g),攪拌後,回收二氯甲烷層。於另外容器中,加入20~25℃之己烷(386.86g),滴入二氯甲烷層。滴入結束後,於20~25℃下熟成30分鐘後,經過濾得目的之中間體化合物(f-01)(產率70.9%)。(i) Add a small amount of phosphorus oxide (8.53g) and 2,6-dimethylphenol (8.81g) and diphenylarsenium (12.2g) to methanesulfonic acid (60.75g) controlled below 20 °C. . After the temperature was controlled at 15 to 20 ° C for 30 minutes, the temperature was raised to 40 ° C, and the mixture was aged for 2 hours. Subsequently, the reaction was dropped into pure water (109.35 g) cooled to below 15 °C. After completion of the dropwise addition, dichloromethane (54.68 g) was added, and after stirring, a dichloromethane layer was collected. In a separate vessel, hexane (386.86 g) at 20-25 ° C was added and the dichloromethane layer was added dropwise. After completion of the dropwise addition, the mixture was aged at 20 to 25 ° C for 30 minutes, and then filtered to give the desired intermediate compound (f-01) (yield 70.9%).

所得之中間體化合物(f-01),以1 H-NMR進行分析。The obtained intermediate compound (f-01) was analyzed by 1 H-NMR.

1 H-NMR(DMSO-d6、600MHz):δ(ppm)=7.61-7.72(m,10H,苯基),7.14(S,2H,Hc ),3.12(S,3H,Hb ),2.22(s,6H,Ha )。 1 H-NMR (DMSO-d6, 600 MHz): δ (ppm) = 7.61 - 7.72 (m, 10H, phenyl), 7.14 (S, 2H, H c ), 3.12 (S, 3H, H b ), 2.22 (s, 6H, H a ).

由上述分析結果,得知所得中間體化合物(f-01)具有下述所示構造。From the results of the above analysis, it was found that the obtained intermediate compound (f-01) had the structure shown below.

(ii)使前述中間體化合物(f-01)(4g)溶解於二氯甲烷(79.8g)。確認溶解後,添加碳酸鉀(6.87g),再添加溴乙酸2-甲基-2-金剛烷(3.42g)。迴流下,反應24小時後,經過濾、水洗淨,以己烷晶析。所得粉體經減壓乾燥後得目的化合物3.98g(產率66%)。(ii) The above intermediate compound (f-01) (4 g) was dissolved in dichloromethane (79.8 g). After confirming dissolution, potassium carbonate (6.87 g) was added, followed by addition of 2-methyl-2-adamantane (3.42 g). After refluxing for 24 hours, it was filtered, washed with water, and crystallized from hexane. The obtained powder was dried under reduced pressure to give the title compound (yield: 66%).

該目的化合物,1 H-NMR進行分析。其結果係如以下所示。The title compound was analyzed by 1 H-NMR. The results are shown below.

1 H-NMR(CDCl3 、600MHz):δ(ppm)=7.83-7.86(m,4H,苯基),7.69-7.78(m,6H,苯基),7.51(s,2H,Hd ),4.46(s,2H,Hc ),2.39(s,6H,Ha ),2.33(s,2H,Adamantane),2.17(s,2H,Adamantane),1.71-1.976(m,11H,Adamantane),1.68(s,3H,Hb ),1.57-1.61(m,2H,Adamantane)。 1 H-NMR (CDCl 3 , 600 MHz): δ (ppm) = 7.83 - 7.86 (m, 4H, phenyl), 7.69-7.78 (m, 6H, phenyl), 7.51 (s, 2H, Hd ), 4.46 (s, 2H, H c ), 2.39 (s, 6H, H a ), 2.33 (s, 2H, Adamantane), 2.17 (s, 2H, Adamantane), 1.71-1.976 (m, 11H, Adamantane), 1.68 (s, 3H, H b ), 1.57-1.61 (m, 2H, Adamantane).

由上述分析結果得知,該目的化合物中,確認含有具有下述所示構造之化合物(f-1)。From the results of the above analysis, it was confirmed that the compound (f-1) having the structure shown below was contained in the objective compound.

此外,該目的化合物中,由離子色層分析法之測定結果確認,除化合物(f-1)以外,也含有陽離子部之NMR數據與上述相同之化合物(f-2)及化合物(f-3)。該些化合物之比率為,化合物(f-1)21.4mol%、化合物(f-2)11.4mol%、化合物(f-3)67.2mol%。In addition, it is confirmed by the measurement result of the ion chromatography method that the NMR data of the cation part is the same as the above-mentioned compound (f-2) and the compound (f-3) except the compound (f-1). ). The ratio of these compounds was 21.4 mol% of the compound (f-1), 11.4 mol% of the compound (f-2), and 67.2 mol% of the compound (f-3).

(iii)使下述之化合物(IX)5.00g溶解於純水50.0g中,加入前述之化合物(f-3)6.19g後,加入二氯甲烷50.0g,於室溫下攪拌10小時。隨後,經分液取出有機層。該有機層以1%HCl水溶液洗淨3次,再以1%氨水溶液洗淨1次後,以純水洗淨4次,有機層經濃縮結果,得白色固體之目的化合物(化合物(B)-1)8.58g(產率:90.4%)。(iii) 5.00 g of the following compound (IX) was dissolved in 50.0 g of pure water, and 6.19 g of the above compound (f-3) was added thereto, and then 50.0 g of dichloromethane was added thereto, followed by stirring at room temperature for 10 hours. Subsequently, the organic layer was taken out by liquid separation. The organic layer was washed three times with a 1% aqueous HCl solution, and then washed once with a 1% aqueous ammonia solution, and then washed four times with pure water. The organic layer was concentrated to give the title compound ( Compound (B) -1) 8.58 g (yield: 90.4%).

所得化合物(B)-1,以1 H-NMR及19 F-NMR進行分析。The obtained compound (B)-1 was analyzed by 1 H-NMR and 19 F-NMR.

1 H-NMR(DMSO-d6、400MHz):δ(ppm)=1.47-1.95(m,15H,Ad,3H,陰離子),2.13-2.16(m,2H,Ad,1H,陰離子),2.30(s,6H,PhCH3 ),2.49(m,1H,陰離子),3.48(m,1H,陰離子),3.88(t,1H,陰離子),4.58(s,2H,CH2 )4.66(t,1H,陰離子),4.78(m,1H,陰離子),7.57(m,2H,Ph),7.72-7.84(m,10H,Ph). 1 H-NMR (DMSO-d6, 400 MHz): δ (ppm) = 1.47-1.95 (m, 15H, Ad, 3H, anion), 2.13-2.16 (m, 2H, Ad, 1H, anion), 2.30 (s) , 6H, PhCH 3 ), 2.49 (m, 1H, anion), 3.48 (m, 1H, anion), 3.88 (t, 1H, anion), 4.58 (s, 2H, CH 2 ) 4.66 (t, 1H, anion ), 4.78 (m, 1H, anion), 7.57 (m, 2H, Ph), 7.72-7.84 (m, 10H, Ph).

19 F-NMR(DMSO-d6、400MHz):δ(ppm)-107.8(m,2F,CF2 ),(其中,六氟苯之波峰設定為-160ppm)。 19 F-NMR (DMSO-d6, 400 MHz): δ (ppm) - 107.8 (m, 2F, CF 2 ) (wherein the peak of hexafluorobenzene was set to -160 ppm).

由上述結果得知,確認化合物(B)-1具有上述式(g)所示構造。From the above results, it was confirmed that the compound (B)-1 had the structure represented by the above formula (g).

Claims (16)

一種正型光阻組成物,其為含有經由酸之作用而增大對鹼顯影液之溶解性的基材成份(A),及經由曝光而發生酸之酸產生劑成份(B)之正型光阻組成物,其特徵為,前述基材成份(A)為含有具有下述通式(a0-1)所表示之結構單位(a0-1),及下述通式(a0-2)所表示之結構單位(a0-2)之高分子化合物(A1), [式中,R1 為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R2 為2價之鍵結基,R3 為其環骨架中含有-SO2 -之環式基,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R21 為分支鏈狀之烷基;R22 為可與該R22 鍵結之碳原子共同形成脂肪族單環式基之基]。A positive-type photoresist composition which comprises a substrate component (A) which increases the solubility to an alkali developer via an action of an acid, and a positive type of an acid generator component (B) which generates an acid via exposure The photoresist composition characterized in that the substrate component (A) contains a structural unit (a0-1) represented by the following general formula (a0-1), and a general formula (a0-2) a polymer compound (A1) representing the structural unit (a0-2), Wherein R 1 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; R 2 is a divalent bond group; and R 3 is a ring skeleton containing -SO 2 - a cyclic group, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; R 21 is a branched alkyl group; and R 22 is bondable to the R 22 The carbon atoms together form the base of the aliphatic monocyclic group]. 如申請專利範圍第1項之正型光阻組成物,其中,前述R3 為其環骨架中含有-O-SO2 -之環式基。The positive resist composition according to claim 1, wherein R 3 is a cyclic group containing -O-SO 2 - in the ring skeleton. 如申請專利範圍第2項之正型光阻組成物,其中, 前述R3 為下述通式(3-1)所表示者, [式中,A’為可含有氧原子或硫原子之碳數1~5之伸烷基、氧原子或硫原子,a為0~2之整數,R6 為烷基、烷氧基、鹵化烷基、羥基、-COOR”、-OC(=O)R”、羥烷基或氰基,R”為氫原子或烷基]。The positive resist composition of claim 2, wherein R 3 is represented by the following formula (3-1), [wherein A' is an alkylene group, an oxygen atom or a sulfur atom having 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom, a is an integer of 0 to 2, and R 6 is an alkyl group, an alkoxy group, or a halogenated group. Alkyl, hydroxy, -COOR", -OC(=O)R", hydroxyalkyl or cyano, R" is a hydrogen atom or an alkyl group]. 如申請專利範圍第1項之正型光阻組成物,其中,前述高分子化合物(A1)為具有與前述結構單位(a0-1)及(a0-2)相異之結構單位,且含有酸解離性溶解抑制基之α位的碳原子可鍵結碳數1~5之烷基或碳數1~5之鹵化烷基的丙烯酸酯所衍生之結構單位(a1)。 The positive-type resist composition according to the first aspect of the invention, wherein the polymer compound (A1) has a structural unit different from the structural units (a0-1) and (a0-2), and contains an acid. The carbon atom at the α position of the dissociative dissolution inhibiting group may be bonded to a structural unit (a1) derived from an alkyl group having 1 to 5 carbon atoms or an alkyl group having 1 to 5 carbon atoms. 如申請專利範圍第4項之正型光阻組成物,其中,前述高分子化合物(A1)至少具有2種前述結構單位(a1)。 The positive-type resist composition of claim 4, wherein the polymer compound (A1) has at least two types of the structural units (a1). 如申請專利範圍第4或5項之正型光阻組成物,其中,前述高分子化合物(A1)中,前述結構單位(a1)為具有由下述通式(a1-0-12)所表示之結構單位及下述通式(a1-0-2)所表示之結構單位所成群中所選擇之至少1種, [式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R23 為烷基,R24 為可與該R24 鍵結之碳原子共同形成脂肪族多環式基之基,Y2 為2價之鍵結基,X2 為酸解離性溶解抑制基]。The positive-type resist composition according to the fourth or fifth aspect of the invention, wherein the polymer unit (A1) has the structural unit (a1) represented by the following formula (a1-0-12) At least one selected from the group consisting of structural units and structural units represented by the following general formula (a1-0-2), Wherein R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; R 23 is an alkyl group; and R 24 is a carbon atom which can bond with the R 24 bond to form a fat. A group of a polycyclic group, Y 2 is a divalent bond group, and X 2 is an acid dissociable dissolution inhibiting group]. 如申請專利範圍第1項之正型光阻組成物,其中,前述高分子化合物(A1)尚具有含有含極性基之脂肪族烴基的α位的碳原子可鍵結碳數1~5之烷基或碳數1~5之鹵化烷基之丙烯酸酯所衍生之結構單位(a3)。 The positive-type resist composition according to the first aspect of the invention, wherein the polymer compound (A1) further has a carbon atom having an α-position containing a polar group-containing aliphatic hydrocarbon group, and a carbon number of 1 to 5 may be bonded. A structural unit derived from an acrylate having a halogenated alkyl group having 1 to 5 carbon atoms (a3). 如申請專利範圍第1項之正型光阻組成物,其為含有含氮有機化合物(D)。 A positive-type photoresist composition as claimed in claim 1 which contains a nitrogen-containing organic compound (D). 一種光阻圖型之形成方法,其特徵為包含,使用申請專利範圍第1項之正型光阻組成物於支撐體上形成光阻膜之步驟、使前述光阻膜曝光之步驟,及使前述光阻膜鹼顯影以形成光阻圖型之步驟。 A method for forming a photoresist pattern, comprising the steps of: forming a photoresist film on a support by using a positive photoresist composition of claim 1; exposing the photoresist film; and The step of alkali developing the photoresist film to form a photoresist pattern. 一種高分子化合物,其特徵為,具有下述通式(a0-1)所表示之結構單位(a0-1),及下述通式(a0-2)所表示之結構單位(a0-2), [式中,R1 為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R2 為2價之鍵結基,R3 為其環骨架中含有-SO2 -之環式基,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R21 為分支鏈狀之烷基;R22 為可與該R22 鍵結之碳原子共同形成脂肪族單環式基之基]。A polymer compound having a structural unit (a0-1) represented by the following formula (a0-1) and a structural unit represented by the following formula (a0-2) (a0-2) , Wherein R 1 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; R 2 is a divalent bond group; and R 3 is a ring skeleton containing -SO 2 - a cyclic group, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; R 21 is a branched alkyl group; and R 22 is bondable to the R 22 The carbon atoms together form the base of the aliphatic monocyclic group]. 如申請專利範圍第10項之高分子化合物,其中,前述R3 為其環骨架中含有-O-SO2 -之環式基者。The polymer compound according to claim 10, wherein the R 3 is a ring-form group containing -O-SO 2 - in the ring skeleton. 如申請專利範圍第11項之高分子化合物,其中,前述R3 為下述通式(3-1)所表示者, [式中,A’為可含有氧原子或硫原子之碳數1~5之伸烷基、氧原子或硫原子,a為0~2之整數,R6 為烷基、烷氧 基、鹵化烷基、羥基、-COOR”、-OC(=O)R”、羥烷基或氰基,R”為氫原子或烷基]。The polymer compound according to claim 11, wherein the R 3 is represented by the following formula (3-1), [wherein A' is an alkylene group, an oxygen atom or a sulfur atom having 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom, a is an integer of 0 to 2, and R 6 is an alkyl group, an alkoxy group, or a halogenated group. Alkyl, hydroxy, -COOR", -OC(=O)R", hydroxyalkyl or cyano, R" is a hydrogen atom or an alkyl group]. 如申請專利範圍第10項之高分子化合物,其中,前述高分子化合物(A1)為具有與前述結構單位(a0-1)及(a0-2)相異之結構單位,且含有酸解離性溶解抑制基之α位的碳原子可鍵結碳數1~5之烷基或碳數1~5之鹵化烷基的丙烯酸酯所衍生之結構單位(a1)。 The polymer compound according to claim 10, wherein the polymer compound (A1) has a structural unit different from the structural units (a0-1) and (a0-2), and contains an acid dissociable solution. The carbon atom at the α position of the inhibiting group may be bonded to a structural unit (a1) derived from an alkyl group having 1 to 5 carbon atoms or an alkyl group having 1 to 5 carbon atoms. 如申請專利範圍第13項之高分子化合物,其至少具有2種前述結構單位(a1)。 A polymer compound according to claim 13 which has at least two kinds of the above structural units (a1). 如申請專利範圍第13或14項之高分子化合物,其中,前述結構單位(a1)具有由下述通式(a1-0-12)所表示之結構單位及下述通式(a1-0-2)所表示之結構單位所成群中所選擇之至少1種, [式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基,R23 為烷基,R24 為可與該R24 鍵結之碳原子共同形成脂肪族多環式基之基,Y2 為2價之鍵結基,X2 為酸解離性溶解抑制基]。The polymer compound according to claim 13 or 14, wherein the structural unit (a1) has a structural unit represented by the following formula (a1-0-12) and a formula (a1-0-) 2) at least one selected from the group of structural units indicated, Wherein R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; R 23 is an alkyl group; and R 24 is a carbon atom which can bond with the R 24 bond to form a fat. A group of a polycyclic group, Y 2 is a divalent bond group, and X 2 is an acid dissociable dissolution inhibiting group]. 如申請專利範圍第10項之高分子化合物,其尚具有含有含極性基之脂肪族烴基的α位的碳原子可鍵結碳數1~5之烷基或碳數1~5之鹵化烷基之丙烯酸酯所衍生之結構單位(a3)。The polymer compound according to claim 10, which further has a carbon atom having an α-position of a polar group-containing aliphatic hydrocarbon group, and a C 1 to 5 alkyl group or a C 1 to 5 halogenated alkyl group. The structural unit derived from the acrylate (a3).
TW98146290A 2009-02-10 2009-12-31 A positive resist composition, a photoresist pattern formation method, and a polymer compound TWI471700B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009029154A JP5325596B2 (en) 2009-02-10 2009-02-10 Positive resist composition, resist pattern forming method, polymer compound

Publications (2)

Publication Number Publication Date
TW201039064A TW201039064A (en) 2010-11-01
TWI471700B true TWI471700B (en) 2015-02-01

Family

ID=42766689

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98146290A TWI471700B (en) 2009-02-10 2009-12-31 A positive resist composition, a photoresist pattern formation method, and a polymer compound

Country Status (2)

Country Link
JP (1) JP5325596B2 (en)
TW (1) TWI471700B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5658546B2 (en) * 2010-11-30 2015-01-28 東京応化工業株式会社 Resist composition, resist pattern forming method, polymer compound
JP5666408B2 (en) * 2011-01-28 2015-02-12 信越化学工業株式会社 Resist composition and pattern forming method using the same
JP6237763B2 (en) * 2013-03-22 2017-11-29 Jsr株式会社 Radiation-sensitive resin composition and resist pattern forming method
JP7052612B2 (en) * 2018-03-27 2022-04-12 三菱ケミカル株式会社 (Meta) acrylic acid ester and its manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1592870A (en) * 2001-12-03 2005-03-09 东京应化工业株式会社 Positive resist composition and method of forming resist pattern from the same
US20050158662A1 (en) * 2004-01-19 2005-07-21 Kikuo Furukawa Adamantane derivatives and resin compositions using the same as raw material

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4439270B2 (en) * 2003-06-18 2010-03-24 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
JP4781086B2 (en) * 2005-10-31 2011-09-28 ダイセル化学工業株式会社 Polymer compound having alicyclic skeleton
JP5129988B2 (en) * 2007-06-13 2013-01-30 東京応化工業株式会社 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
KR101620647B1 (en) * 2008-06-30 2016-05-12 주식회사 쿠라레 Acrylate derivative, haloester derivative, polymer compound and photoresist composition
JP5232663B2 (en) * 2009-01-14 2013-07-10 東京応化工業株式会社 Resist composition, resist pattern forming method, polymer compound and compound

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1592870A (en) * 2001-12-03 2005-03-09 东京应化工业株式会社 Positive resist composition and method of forming resist pattern from the same
US20050158662A1 (en) * 2004-01-19 2005-07-21 Kikuo Furukawa Adamantane derivatives and resin compositions using the same as raw material

Also Published As

Publication number Publication date
JP5325596B2 (en) 2013-10-23
TW201039064A (en) 2010-11-01
JP2010185987A (en) 2010-08-26

Similar Documents

Publication Publication Date Title
TWI474114B (en) Positive resist composition, method of forming resist pattern, and polymer compound
TWI449717B (en) Positive resist composition, method of forming resist pattern
TWI474115B (en) Positive resist composition, method of forming resist pattern, polymer compound
TWI474117B (en) Positive resist composition and method of forming resist pattern
TWI465848B (en) Positive resist composition, method of forming resist pattern, and polymeric compound
TWI505033B (en) Positive resist composition, method of forming resist pattern and polymeric compound
TWI474116B (en) Positive resist composition and method of forming resist pattern
TWI468863B (en) Positive resist composition and method of forming resist pattern
TWI483076B (en) Positive resist composition, method of forming resist pattern using the same, and polymeric compound
TWI510861B (en) Positive resist composition, method of forming resist pattern using the same, and fluorine-containing polymeric compound
TWI444773B (en) Positive resist composition and method of forming resist pattern
TWI475319B (en) Resist composition, method of forming resist pattern, polymeric compound, and compound
TWI403846B (en) Positive resist composition, method of forming resist pattern, and polymeric compound
TWI532754B (en) Compound, polymeric compound, acid generator, resist composition, and method of forming resist pattern
TWI525071B (en) Novel compound
TWI493291B (en) Positive resist composition and method of forming resist pattern
TWI394005B (en) Positive resist composition, method of forming resist pattern, and polymeric compound
TWI534531B (en) Resist composition, method of forming resist pattern, and polymeric compound
TWI464533B (en) Resist composition, method of forming resist pattern, and novel compound and acid generator
JP2010134418A (en) Positive resist composition, method of forming resist pattern, and polymeric compound
TW201323457A (en) Polymer, resist composition and method of forming resist pattern
TWI525391B (en) Resist composition, and method of forming resist pattern
TWI471700B (en) A positive resist composition, a photoresist pattern formation method, and a polymer compound
TWI498324B (en) Resist composition, method of forming resist pattern, polymer compound, compound
JP5308896B2 (en) Positive resist composition and resist pattern forming method