TWI462280B - Wafer level camera module structure - Google Patents
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本發明係關於半導體元件模組結構,特別係一整合主被動元件、透鏡架以及影像感測器以降低元件尺寸之晶圓級影像模組結構。The invention relates to a semiconductor component module structure, in particular to a wafer level image module structure which integrates active and passive components, a lens holder and an image sensor to reduce component size.
半導體技術快速發展,傳統之覆晶結構中,錫球陣列形成於晶粒之表面,透過傳統之錫膏藉由錫球罩幕製作以形成所欲之圖案。封裝功能包含散熱、訊號傳輸、電源分配、保護等,當晶片更加複雜,傳統之封裝如導線架封裝、軟式封裝、剛性封裝、無法滿足高密度小尺寸晶片之需求。晶圓級封裝技術係為高級封裝技術,藉其晶粒係於晶圓上加以製造及測試,且接著藉切割而分離以用於在表面黏著生產線中組裝。因晶圓級封裝技術利用整個晶圓作為目標,而非利用單一晶片或晶粒,因此於進行分離程序之前,封裝及測試皆已完成。此外,晶圓級封裝係如此之高級技術,因此打線接合、晶粒黏著及底部填充之程序可予以省略。藉利用晶圓級封裝技術,可減少成本及製造時間且晶圓級封裝之最後結構尺寸可相當於晶粒大小,故此技術可滿足電子裝置之微型化需求。The rapid development of semiconductor technology, in the traditional flip-chip structure, the solder ball array is formed on the surface of the die, through the traditional solder paste by the solder ball mask to form the desired pattern. The package functions include heat dissipation, signal transmission, power distribution, protection, etc. When the chip is more complicated, the traditional package such as lead frame package, flexible package, rigid package, can not meet the needs of high-density small-size chips. Wafer-level packaging technology is an advanced packaging technology that is fabricated and tested by wafers on a wafer and then separated by cutting for assembly in a surface mount line. Because wafer-level packaging technology uses the entire wafer as a target rather than a single wafer or die, packaging and testing are done before the separation process. In addition, wafer level packaging is such an advanced technology that the procedures for wire bonding, die attach and underfill can be omitted. By using wafer-level packaging technology, cost and manufacturing time can be reduced and the final structure size of the wafer-level package can be equivalent to the die size, so the technology can meet the miniaturization requirements of electronic devices.
此外,藉由電子封裝技術,互補式金氧半場效電晶體(CMOS)影像感測器晶片係製作於CMOS影像感測器模組之中。此模組被應用到各種電子產品中,並且CMOS影像感測器模組所需的封裝規格需求取決於此產品的特性。尤 其是最近的CMOS影像感測器模組的傾向,高電性能力、小型化、高密度、低功耗、多功能、高速信號處理以及可靠度等,是電子產品的小型化的典型特徵。In addition, a complementary MOS field-effect transistor (CMOS) image sensor chip is fabricated in a CMOS image sensor module by electronic packaging technology. This module is used in a variety of electronic products, and the package specification requirements for CMOS image sensor modules depend on the characteristics of the product. especially It is the trend of recent CMOS image sensor modules, high-power capability, miniaturization, high density, low power consumption, multi-function, high-speed signal processing, and reliability, etc., which are typical features of miniaturization of electronic products.
在目前的晶圓級封裝結構中,雖然可以降低模組結構的高度,但無法包含主、被動元件於模組結構中,因此主、被動元件需要放在模組以外的區域。所以並無法降低模組結構於X/Y方向的尺寸。In the current wafer-level package structure, although the height of the module structure can be reduced, but the main and passive components cannot be included in the module structure, the active and passive components need to be placed outside the module. Therefore, it is not possible to reduce the size of the module structure in the X/Y direction.
根據以上之習知技術的缺點,本發明提出一種嶄新的晶圓級影像模組結構。According to the above disadvantages of the prior art, the present invention proposes a novel wafer level image module structure.
鑒於上述之缺點,本發明之一目的在於提供一種晶圓級影像模組結構,具有較小的模組結構。In view of the above disadvantages, it is an object of the present invention to provide a wafer level image module structure having a smaller module structure.
本發明再一目的在於提供一種嶄新的晶圓級影像模組結構,其以可整合主、被動元件於同一模組結構中。It is still another object of the present invention to provide a novel wafer level image module structure that integrates both active and passive components in the same module structure.
本發明提供一種晶圓級影像模組結構,包含:一晶片,具有一感測區域,一矽晶穿孔結構形成以穿透該晶片之上表面至下表面;一透明基板,配置於該晶片之上,具有至少一導電穿孔結構形成於其中及一導線與至少一電子元件形成於其上,該導線電性連接導電穿孔結構以及該至少一電子元件,導電穿孔結構約略對準矽晶穿孔結構;一透鏡架,配置於透明基板之上,一透鏡位於該透鏡架之上方,其中透鏡約略對準透明基板及感測區域。The present invention provides a wafer level image module structure comprising: a wafer having a sensing region, a twinned perforated structure formed to penetrate the upper surface to the lower surface of the wafer; and a transparent substrate disposed on the wafer Having at least one conductive via structure formed therein and a wire and at least one electronic component formed thereon, the wire electrically connecting the conductive via structure and the at least one electronic component, the conductive via structure being approximately aligned with the twinned via structure; A lens holder is disposed on the transparent substrate, and a lens is positioned above the lens holder, wherein the lens is approximately aligned with the transparent substrate and the sensing region.
其中透鏡架係透過一黏著層附著於透明基板之上。The lens frame is attached to the transparent substrate through an adhesive layer.
在另一例子中,上述模組結構更包括一導電層,耦接 導電穿孔結構與矽晶穿孔結構;一焊接球,形成於矽晶穿孔結構之下表面之上。In another example, the module structure further includes a conductive layer coupled a conductive perforated structure and a twinned perforated structure; a solder ball formed over the lower surface of the twinned perforated structure.
其中至少一電子元件包括至少一主動元件或至少一被動元件。At least one of the electronic components includes at least one active component or at least one passive component.
本發明將配合實施例與隨附之圖式詳述於下。應可理解者為本發明中所有之實施例僅為例示之用,並非用以限制。因此除文中之實施例外,本發明亦可廣泛地應用在其他實施例中。且本發明並不受限於任何實施例,應以隨附之申請專利範圍及其同等領域而定。The invention will be described in conjunction with the embodiments and the accompanying drawings. It is to be understood that all of the embodiments of the invention are illustrative and not intended to be limiting. Therefore, the invention may be applied to other embodiments in addition to the embodiments described herein. The invention is not limited to any embodiment, but should be determined by the scope of the appended claims and their equivalents.
第一圖顯示整合透鏡架以及影像感測器之影像模組結構之截面圖。如第一圖所示,其中影像模組結構100整合透鏡架以及影像感測器而成為一具有感光作用的模組結構,其可以應用於手機或其他可攜式電子元件之照相模組。其中影像模組結構100包含晶片106、透鏡架103、透鏡101以及透明基板102。透明基板102係位於模組結構的內層或中間層,而晶片106則位於模組結構的底部。The first figure shows a cross-sectional view of the image module structure of the integrated lens holder and the image sensor. As shown in the first figure, the image module structure 100 integrates the lens holder and the image sensor to form a photosensitive module structure, which can be applied to a camera module of a mobile phone or other portable electronic components. The image module structure 100 includes a wafer 106, a lens holder 103, a lens 101, and a transparent substrate 102. The transparent substrate 102 is located in the inner or intermediate layer of the module structure, and the wafer 106 is located at the bottom of the module structure.
上述模組結構100之製作流程如下所述。首先,將透明基板102直接附著於晶片106之上。在此步驟中,可以先形成一黏著層105於晶片106之上,然後透明基板102係藉由黏著層105而附著於晶片106之上。在一例子中,透明基板102之大小約略等於或大於晶片106之尺寸。在本發明之一實施例中,黏著層105係透過一印刷或塗佈製程以形成一黏著層圖案於晶片106之上。晶片106為一感 測晶片,具有感測(主動)區域106a以及接觸墊105可以裸露出來。焊接球(solder ball)107形成於晶片106之下,以利於模組結構100之晶片106得以電性連接至外部元件。The manufacturing process of the above module structure 100 is as follows. First, the transparent substrate 102 is directly attached to the wafer 106. In this step, an adhesive layer 105 may be formed on the wafer 106, and then the transparent substrate 102 is attached to the wafer 106 by the adhesive layer 105. In one example, the size of the transparent substrate 102 is approximately equal to or greater than the size of the wafer 106. In one embodiment of the invention, the adhesive layer 105 is passed through a printing or coating process to form an adhesive layer pattern over the wafer 106. Wafer 106 is a sense The test wafer has a sense (active) region 106a and the contact pads 105 can be exposed. A solder ball 107 is formed under the wafer 106 to facilitate electrically connecting the wafer 106 of the module structure 100 to external components.
透明基板102例如為一玻璃基板或其他透明材料所形成之基板,配置於晶片之上。The transparent substrate 102 is, for example, a substrate formed of a glass substrate or other transparent material, and is disposed on the wafer.
然後,進行透鏡架附著製程(holder mount),透鏡架103附著於透明基板102之上,以形成模組結構100。在此步驟中,可以先形成一黏著層104於透明基板102之上,然後透鏡架103之下半部再藉由黏著層104而附著於透明基板102之上。Then, a lens holder attaching process is performed, and the lens holder 103 is attached to the transparent substrate 102 to form the module structure 100. In this step, an adhesive layer 104 may be formed on the transparent substrate 102, and then the lower half of the lens holder 103 is attached to the transparent substrate 102 by the adhesive layer 104.
其中透鏡101係固定於透鏡架103之中。此外,透鏡架103亦可以固定於透明基板102上。透鏡101可以選擇性地配置於透鏡架之最上方。在本實施例之模組結構100中,透鏡架103之內具有一凹槽結構或容置空間,以使得透明基板102可以選擇性地配置於其內,以及透鏡101與晶片106之間。換言之,透鏡101係約略對準透明基板102與晶片106,使得光可以直接入射到晶片106的感測區域106a。The lens 101 is fixed in the lens holder 103. In addition, the lens holder 103 can also be fixed to the transparent substrate 102. The lens 101 can be selectively disposed at the uppermost portion of the lens holder. In the module structure 100 of the present embodiment, the lens holder 103 has a groove structure or an accommodating space therein so that the transparent substrate 102 can be selectively disposed therein and between the lens 101 and the wafer 106. In other words, the lens 101 is approximately aligned with the transparent substrate 102 and the wafer 106 such that light can be incident directly onto the sensing region 106a of the wafer 106.
在形成模組結構100之後,可以進行透鏡101、透明基板102與晶片106之感測區域之間的對準量測,以及影像感測晶片106的電性的測試。After forming the module structure 100, alignment measurements between the lens 101, the transparent substrate 102 and the sensing region of the wafer 106, and the electrical sensing of the image sensing wafer 106 can be performed.
如第二圖所示,顯示本發明之晶圓級影像模組結構之一實施例。在本實施例中,晶圓級影像模組結構200可以應用於手機或其他可攜式電子元件之照相模組。其中晶圓 級影像模組結構200包含晶片206、透明基板202、透鏡架203、透鏡201以及電子元件205。透明基板202係位於模組結構的內層或中間層,而晶片206則位於模組結構的底部。另外,電子元件205位於透明基板202之上,其配置的位置避開透鏡201的光路徑,以避免阻擋到光行進至晶片206的感測區域206a。As shown in the second figure, an embodiment of the wafer level image module structure of the present invention is shown. In this embodiment, the wafer level image module structure 200 can be applied to a camera module of a mobile phone or other portable electronic component. Wafer The stage image module structure 200 includes a wafer 206, a transparent substrate 202, a lens holder 203, a lens 201, and an electronic component 205. The transparent substrate 202 is located in the inner or intermediate layer of the module structure, and the wafer 206 is located at the bottom of the module structure. Additionally, electronic component 205 is positioned over transparent substrate 202 in a position that avoids the light path of lens 201 to avoid blocking light from traveling to sensing region 206a of wafer 206.
晶片206例如包含形成於矽晶圓上的影像感測器晶粒,其二側具有第一穿孔結構,其係穿透該晶片206之上表面至下表面。此穿孔結構係填入一導電材料以形成一矽穿孔(through silicon via,TSV)結構210。其中矽穿孔結構210可以預先形成於矽晶圓(晶片206)之內。The wafer 206 includes, for example, image sensor dies formed on a ruthenium wafer having a first punctured structure on both sides that penetrates the upper surface to the lower surface of the wafer 206. The perforated structure is filled with a conductive material to form a through silicon via (TSV) structure 210. The germanium via structure 210 may be preformed within the germanium wafer (wafer 206).
晶片206具有一接觸墊,該接觸墊係透過一導線(trace)而電性連接矽穿孔結構210。導電層(金屬)209可以塗佈於矽穿孔結構210之上以作為電性連接層。焊接球(solder ball)211形成於矽穿孔結構210之下,以利於模組結構200之晶片206與電子元件205得以電性連接至外部元件。The wafer 206 has a contact pad that is electrically connected to the perforated structure 210 through a trace. A conductive layer (metal) 209 may be coated over the tantalum perforated structure 210 as an electrical connection layer. A solder ball 211 is formed under the crucible perforation structure 210 to facilitate the electrical connection of the wafer 206 and the electronic component 205 of the module structure 200 to the external component.
透明基板202其二側具有第二穿孔結構,此穿孔結構係填入一導電材料以形成一導電穿孔(conductive via)結構208。導電穿孔結構208電性連接導電層209。導電層209係電性連接透明基板202中的導電穿孔結構208,以及晶片206中的矽穿孔結構210。換言之,導電穿孔結構208係透過導電層209而電性連接矽穿孔結構210。導電穿孔結構208約略對準矽穿孔結構210。此外,一導線(trace)207形成於透明基板202以及導電穿孔結構208之上,並電性 連接該導電穿孔結構208。電子元件205配置於導線207之上,並電性連接該導線207。舉例而言,電子元件205為主動元件(例如:積體電路(IC))或被動元件(例如:電容或電感)。基於透明基板202中穿孔結構,電子元件205可以整合在透明基板202之上,成為模組結構的一部分。亦即,無需額外的元件置放空間,本發明即可以整合多個電子元件於模組結構之內。透過導電穿孔結構208以及矽穿孔結構210,模組結構200中的感測晶片206以及電子元件205上的電訊號可以經由焊接球211而傳遞至外部。The transparent substrate 202 has a second perforated structure on both sides thereof. The perforated structure is filled with a conductive material to form a conductive via structure 208. The conductive via structure 208 is electrically connected to the conductive layer 209. The conductive layer 209 is electrically connected to the conductive via structure 208 in the transparent substrate 202, and the germanium via structure 210 in the wafer 206. In other words, the conductive via structure 208 is electrically connected to the via structure 210 through the conductive layer 209. The electrically conductive perforated structure 208 is approximately aligned with the perforated perforated structure 210. In addition, a trace 207 is formed on the transparent substrate 202 and the conductive via structure 208, and is electrically The conductive via structure 208 is connected. The electronic component 205 is disposed on the wire 207 and electrically connected to the wire 207. For example, electronic component 205 is an active component (eg, an integrated circuit (IC)) or a passive component (eg, a capacitor or inductor). Based on the perforated structure in the transparent substrate 202, the electronic component 205 can be integrated over the transparent substrate 202 to form part of the module structure. That is, the present invention can integrate a plurality of electronic components into the module structure without requiring additional component placement space. Through the conductive via structure 208 and the via structure 210, the sensing chip 206 in the module structure 200 and the electrical signals on the electronic component 205 can be transmitted to the outside via the solder ball 211.
上述模組結構200之製作流程如下所述。首先,預備一晶片206,該晶片206可以預先形成一矽穿孔結構210於其中(二側)。矽穿孔結構210之形成可以參考上述或者其他製法。舉例而言,晶片206為一影像感測器(例如CMOS影像感測晶片),其上表面具有一感測區域206a以及接觸墊(未圖示)形成於其上。然後,導電層209形成於矽穿孔結構210之上。The manufacturing process of the above module structure 200 is as follows. First, a wafer 206 is prepared which may be pre-formed with a perforated structure 210 (both sides). The formation of the perforated structure 210 can be referred to the above or other methods. For example, the wafer 206 is an image sensor (eg, a CMOS image sensing wafer) having an upper surface having a sensing region 206a and a contact pad (not shown) formed thereon. Then, a conductive layer 209 is formed over the meandering structure 210.
之後,進行一透明基板202堆疊製程,例如直接配置於晶片206之上。透明基板202可以預先形成一導電穿孔結構208於其中(二側),或者是透明基板202配置於晶片206上之後再形成。在此步驟中,穿孔結構或導電穿孔結構208對準導電層209。然後,導線207形成於透明基板202以及導電穿孔結構208之上,以電性連接導電穿孔結構208。接下來,電子元件205配置於透明基板202上的導電穿孔結構208之上,並電性連接導電穿孔結構208。 電子元件205配置的垂直位置不與鏡片201以及感測區域206a重疊,以免檔住入射到鏡片201的光。Thereafter, a transparent substrate 202 stacking process is performed, for example, directly on the wafer 206. The transparent substrate 202 may be formed in advance with a conductive via structure 208 (on both sides) or after the transparent substrate 202 is disposed on the wafer 206. In this step, the perforated structure or conductive via structure 208 is aligned with the conductive layer 209. Then, a wire 207 is formed on the transparent substrate 202 and the conductive via structure 208 to electrically connect the conductive via structure 208. Next, the electronic component 205 is disposed on the conductive via structure 208 on the transparent substrate 202 and electrically connected to the conductive via structure 208. The vertical position of the electronic component 205 configuration does not overlap the lens 201 and the sensing area 206a to avoid blocking light incident on the lens 201.
最後,透鏡架203,其可以為單純塑膠件或驅動機構(Actuator),附著於透明基板202之上,以完成本發明之模組結構200。在此步驟中,可以先形成一黏著層204於透明基板202之上,然後透鏡架203之底部再藉由黏著層204而附著於透明基板202之上。其中透鏡201係固定於透鏡架203之中,透過透鏡架203以支撐透鏡201。此外,透鏡架203亦可以固定於透明基板202上以支撐透鏡201。透鏡201可以選擇性地配置於透鏡架203之最上方。在本實施例之模組結構200中,透明基板202可選擇性地配置於透鏡架203之內,以及透鏡201與晶片206之間。換言之,透鏡201係約略對準透明基板202與晶片206,使得光可以直接到達感測區域206a。Finally, the lens holder 203, which may be a simple plastic member or an actuator, is attached to the transparent substrate 202 to complete the module structure 200 of the present invention. In this step, an adhesive layer 204 may be formed on the transparent substrate 202, and then the bottom of the lens holder 203 is attached to the transparent substrate 202 by the adhesive layer 204. The lens 201 is fixed to the lens holder 203 and passes through the lens holder 203 to support the lens 201. In addition, the lens holder 203 may also be fixed on the transparent substrate 202 to support the lens 201. The lens 201 can be selectively disposed at the uppermost portion of the lens holder 203. In the module structure 200 of the present embodiment, the transparent substrate 202 can be selectively disposed within the lens holder 203 and between the lens 201 and the wafer 206. In other words, the lens 201 is approximately aligned with the transparent substrate 202 and the wafer 206 such that light can directly reach the sensing region 206a.
在本發明中,無需額外的基板即可達到製造影像模組結構之目的。In the present invention, the structure of the image module can be achieved without an additional substrate.
本發明之優點包含:具有可整合主被動元件於模組結構中,無須額外的空間來放置主被動元件。The advantages of the present invention include: the integration of active and passive components in the module structure, without the need for additional space for placing the active and passive components.
對熟悉此領域技藝者,本發明雖以實例闡明如上,然其並非用以限定本發明之精神。在不脫離本發明之精神與範圍內所作之修改與類似的配置,均應包含在下述之申請專利範圍內,此範圍應覆蓋所有類似修改與類似結構,且應做最寬廣的詮釋。The present invention has been described above by way of example, and is not intended to limit the scope of the invention. Modifications and similar configurations made within the spirit and scope of the invention are intended to be included within the scope of the appended claims.
100‧‧‧影像模組結構100‧‧‧Image module structure
101、201‧‧‧透鏡101, 201‧ ‧ lens
102、202‧‧‧透明基板102, 202‧‧‧ Transparent substrate
103、203‧‧‧透鏡架103, 203‧‧‧ lens holder
104、105‧‧‧黏著層104, 105‧‧‧ adhesive layer
106、206‧‧‧晶片106, 206‧‧‧ wafer
107、211‧‧‧焊接球107, 211‧‧‧ solder balls
200‧‧‧晶圓級影像模組結構200‧‧‧ Wafer-level image module structure
204‧‧‧黏著層204‧‧‧Adhesive layer
205‧‧‧電子元件205‧‧‧Electronic components
206a‧‧‧感測區域206a‧‧‧Sensing area
207‧‧‧導線207‧‧‧ wire
208‧‧‧導電穿孔結構208‧‧‧conductive perforated structure
209‧‧‧導電層209‧‧‧ Conductive layer
210‧‧‧矽穿孔結構210‧‧‧矽perforated structure
第一圖顯示整合透鏡架以及影像感測器之影像模組結構之截面示意圖。The first figure shows a schematic cross-sectional view of the image module structure of the integrated lens holder and the image sensor.
第二圖顯示根據本發明之一實施例之晶圓級影像模組結構之截面示意圖。The second figure shows a cross-sectional view of a wafer level image module structure in accordance with an embodiment of the present invention.
200‧‧‧晶圓級影像模組結構200‧‧‧ Wafer-level image module structure
201‧‧‧透鏡201‧‧‧ lens
202‧‧‧透明基板202‧‧‧Transparent substrate
203‧‧‧透鏡架203‧‧‧ lens holder
204‧‧‧黏著層204‧‧‧Adhesive layer
205‧‧‧電子元件205‧‧‧Electronic components
206‧‧‧晶片206‧‧‧ wafer
206a‧‧‧感測區域206a‧‧‧Sensing area
207‧‧‧導線207‧‧‧ wire
208‧‧‧導電穿孔結構208‧‧‧conductive perforated structure
209‧‧‧導電層209‧‧‧ Conductive layer
210‧‧‧矽穿孔結構210‧‧‧矽perforated structure
211‧‧‧焊接球211‧‧‧ solder ball
Claims (10)
Priority Applications (1)
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TW101122102A TWI462280B (en) | 2012-06-20 | 2012-06-20 | Wafer level camera module structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101122102A TWI462280B (en) | 2012-06-20 | 2012-06-20 | Wafer level camera module structure |
Publications (2)
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TW201401495A TW201401495A (en) | 2014-01-01 |
TWI462280B true TWI462280B (en) | 2014-11-21 |
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TW101122102A TWI462280B (en) | 2012-06-20 | 2012-06-20 | Wafer level camera module structure |
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TW (1) | TWI462280B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200814758A (en) * | 2006-09-08 | 2008-03-16 | Advanced Chip Eng Tech Inc | Structure of image sensor module and a method for manufacturing of wafer level package |
TW201138123A (en) * | 2010-04-28 | 2011-11-01 | Hon Hai Prec Ind Co Ltd | Image sensor package structure and camera module using same |
TW201142996A (en) * | 2010-05-19 | 2011-12-01 | Tdk Taiwan Corp | Packaging device of image sensor |
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2012
- 2012-06-20 TW TW101122102A patent/TWI462280B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200814758A (en) * | 2006-09-08 | 2008-03-16 | Advanced Chip Eng Tech Inc | Structure of image sensor module and a method for manufacturing of wafer level package |
TW201138123A (en) * | 2010-04-28 | 2011-11-01 | Hon Hai Prec Ind Co Ltd | Image sensor package structure and camera module using same |
TW201142996A (en) * | 2010-05-19 | 2011-12-01 | Tdk Taiwan Corp | Packaging device of image sensor |
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