TWI461693B - Mems sensing device and manufacturing method thereof - Google Patents

Description

Microcomputer inductance measuring device and manufacturing method thereof

The present invention relates to a microelectromechanical (MEMS) sensing device, and more particularly to a capacitive microcomputer inductive measuring device.

In general, micromechanical manufacturing technology can produce high-reliability, low-cost inertial sensors that use external physical mass stimuli such as acceleration, angular velocity, or force to cause positional changes that cause changes in output signals. To convert the sensed physical quantity into an electronic signal. The most common are capacitive inertial sensors that sense changes in capacitance, such as Accelerometers or Gyroscopes.

The inertial sensors include a proof mass, a spring that provides flexibility to move the mass relative to the substrate, a base that holds the spring, and a plurality of sensing fingers that sense displacement changes ( Sensing finger) and electrode. When the inertial sensor senses the external physical quantity such as acceleration, the mass will generate a slight displacement through the spring. This displacement can cause a change in the capacitance to achieve the difference of the output electronic signal and complete the sensing action. However, with the complication of the process, the sensing structure of the inertial sensor tends to deflect due to residual stress after deposition and etching of the multilayer. In the horizontal direction (XY axis) of the inertial sensor, the sensing structure cannot maintain a good overlap area, thus reducing the sensing capacitance and sensitivity. In addition, in the out-plane direction (Z-axis) of the inertial sensor, the sensing structure cannot maintain a stable gap, thus causing a large variation in the Z-axis sensing starting capacitance.

The invention provides a microcomputer inductance measuring device, which can reduce the influence of residual stress of the process on sensing capacitance and sensitivity.

The invention provides a method for manufacturing a microcomputer inductance measuring device, which manufactures the above-mentioned microcomputer inductance measuring device.

The invention provides a microcomputer inductance measuring device comprising a substrate, a mass, a plurality of bases, a plurality of elastic members and at least one sensing electrode. Each base is fixed to the substrate. The elastic members are disposed within the mass, and each of the elastic members connects the corresponding base and the mass. The sensing electrode is fixed on the substrate, wherein the sensing electrode and the mass form a first capacitance. The orthographic projection of the mass of the mass on the substrate is a center, and the center of each mass and the corresponding elastic member connecting mass is defined as a reference point, and a distance from the center of the center to the reference point is defined as a reference. The circle is such that the difference between the inner sides of the circumference of the reference circle and the two sensing electrode areas outside the circumference is within a predetermined range.

In an embodiment of the invention, the sensing electrode described above includes a plurality of first sensing electrodes. These first sensing electrodes are arranged in line symmetry with respect to a first line of symmetry passing through the center of the circle and parallel to the substrate.

In an embodiment of the invention, the sensing electrode described above further includes a plurality of second sensing electrodes. The second sensing electrodes are arranged in line symmetry with respect to a second line of symmetry passing through the center of the circle and parallel to the substrate, and the second line of symmetry is perpendicular to the first line of symmetry.

In an embodiment of the present invention, the microcomputer inductance measuring device further includes a plurality of first fixed sensing fingers and a plurality of first movable sensing fingers, wherein the first solid sensing fingers The fixed sensing finger and the first movable sensing fingers are located on both sides of the second symmetry line. These first fixed sensing fingers are fixed on the substrate, and these first movable sensing fingers are located between the plurality of first strip-shaped openings on the mass. These first strip openings are parallel to the first line of symmetry. These first fixed sensing fingers are parallel to the first movable sensing fingers and constitute a plurality of second capacitors.

In an embodiment of the invention, the microcomputer inductance measuring device further includes a plurality of second fixed sensing fingers and a plurality of second movable sensing fingers, wherein the second fixed sensing fingers and the second movable sensing fingers Located on either side of the first line of symmetry. These second fixed sensing fingers are fixed on the substrate, and these second movable sensing fingers are located between the plurality of second strip-shaped openings on the mass. These second strip openings are parallel to the second line of symmetry. These second fixed sensing fingers are parallel to the second movable sensing fingers and constitute a plurality of third capacitors.

In an embodiment of the invention, the orthographic projection of each of the elastic members on the substrate is spiral.

The invention provides a method for manufacturing a microcomputer inductance measuring device, which comprises the following steps: First, a substrate is provided. Next, at least one sensing electrode is formed on the substrate. Then, a plurality of bases, a plurality of elastic members and a mass are formed on the substrate, wherein the elastic members are disposed in the mass, and each elastic member connects the corresponding base and the mass, and at least one sensing electrode and the mass Form a first capacitor. The orthographic projection on the substrate with the centroid of the mass is a center, and the center at which the base and the elastic member are connected to the mass is defined as a reference point, and a distance from the center of the center to the reference point is defined as a reference circle. The difference between the inner sides of the circumference of the reference circle and the outer sides of the two sensing electrodes is within a predetermined range.

In an embodiment of the invention, the step of forming the sensing electrode includes forming a plurality of first sensing electrodes. These first sensing electrodes are arranged in line symmetry with respect to a first line of symmetry passing through the center of the circle and parallel to the substrate.

In an embodiment of the invention, the step of forming the sensing electrode further comprises forming a plurality of second sensing electrodes. The second sensing electrodes are arranged in line symmetry with respect to a second line of symmetry passing through the center of the circle and parallel to the substrate, and the second line of symmetry is perpendicular to the first line of symmetry.

In an embodiment of the invention, the step of forming a mass includes forming a plurality of first fixed sensing fingers and a plurality of first movable sensing fingers. The first fixed sensing fingers are fixed on the substrate and located on two sides of the second symmetry line, and by forming a plurality of first strip openings on the mass, the first strip openings are parallel to the first symmetry line, And these first movable sensing fingers are located between the first strip openings. These first fixed sensing fingers are parallel to the first movable sensing fingers and constitute a plurality of second capacitors.

In an embodiment of the invention, the step of forming the mass further comprises forming a plurality of second fixed sensing fingers and a plurality of second movable sensing fingers. The second fixed sensing fingers are fixed on the substrate and located on both sides of the first symmetry line, and by forming a plurality of second strip openings on the mass, and the second strip openings are parallel and second A line of symmetry, and these first movable sensing fingers are located between the second strip openings. These second fixed sensing fingers are parallel to the second movable sensing fingers and constitute a plurality of third capacitors.

Based on the above, the present invention utilizes the center of mass of the mass of the mass to be centered on the substrate, and is connected to the mass at each of the base and the corresponding elastic member. The heart is defined as the reference point, and the reference circle is defined by the distance from the center of the circle to the reference point. Therefore, the sensing electrode is disposed at a position where the circumference of the reference circle passes, and the difference between the sensing electrodes on the inner side and the outer side of the circumference of the reference circle can be preset. Thereby, when the mass has residual stress, the masses on both sides of the circumference of the reference circle may be deflected upward and downward, and the sensing electrodes located on the inner and outer sides of the circumference of the reference circle may compensate the mass. The amount of capacitance variation caused by upward deflection and downward deflection. With this configuration, the microcomputer inductance measuring device can have a small variation in the initial capacitance value and reduce the influence of residual stress on the sensitivity of the microcomputer inductance measuring device.

The above described features and advantages of the present invention will be more apparent from the following description.

FIG. 1 is a schematic diagram of a microcomputer inductance measuring device according to an embodiment of the present invention. 2 is a side view of the microcomputer inductance measuring device of FIG. 1. Referring to FIG. 1 and FIG. 2 , in the embodiment, the microcomputer inductance measuring device 100 is, for example, an acceleration gauge, a gyroscope or an oscillating component, and includes a substrate 110 , a mass 120 , a plurality of bases 130 , and a plurality of The elastic member 140 and the at least one sensing electrode 150.

Each of the bases 130 is fixed to the substrate 110. These elastic members 140 are disposed in the mass 120, and one side of each elastic member 140 is coupled to the corresponding base portion 130, and the other side of each elastic member is coupled to the mass block 120. The sensing electrode 150 is fixed on the substrate 110, wherein the sensing electrode 150 and the mass 120 form a first capacitor C1. In addition, the mass 120 is movable relative to the substrate 110 by the elastic member 140.

When a physical quantity (for example, acceleration, angular velocity or angular acceleration) is supplied to the microcomputer inductance measuring device 100, the gap between the mass 120 and the sensing electrode 150 is changed, and the first capacitor C1 outputs a corresponding one. An electronic signal (for example, a first capacitance value) to a processing circuit (not shown) to convert the displacement and velocity of the physical quantity generated on the symmetry line Z passing through the centroid 120a of the mass 120 and the vertical substrate 110 Or acceleration, etc.

In addition, the sensing electrode 150 of the present embodiment is configured such that the orthographic projection of the centroid 120a of the mass 120 on the substrate 110 is a center 120b. There is a first connection point A at each of the elastic members 140 connecting the mass 120, and a second connection point B at the corresponding base 130 connecting mass 120. There is a reference point C between each of the first connection point A and the corresponding second connection point B, wherein the preferred position of the reference point C is between the first connection point A and the corresponding second connection point B. point.

In the above, a reference circle 120c is defined by the distance from the center 120b to the reference points C, and the circumference of the reference circle 120c passes through the sensing electrode 150 such that the sensing electrode 150 is located at the circumference of the reference circle 120c. The difference between the inner sensing area and the outer side of the sensing electrode area is within a predetermined range.

Figure 3 is a partial side elevational view of the mass of Figure 1 with residual stress and deformation. It should be noted that, in order to simplify the view, FIG. 3 only shows the partially deformed mass 120, and the base 130 and the elastic member 140 are omitted. Referring to FIG. 1 and FIG. 3, further, after the microcomputer inductance measuring device 100 passes through the process of multi-channel deposition and multi-pass etching, the mass 120 will be deformed and deflected due to the residual stress of the mass 120.

Since the sensing electrodes 150 are disposed on both sides of the circumference of the reference circle 120c, the two sensing electrode areas of the sensing electrodes 150 are respectively located outside the circumference of the reference circle 120c and on the inner side of the circumference thereof. Thereby, the capacitance 152 of the upwardly flexed portion of the mass 120 and the capacitance 154 of the downwardly deflected portion of the mass 120 compensate each other and maintain the amount of variation of the first capacitance C1 on the symmetry line Z.

In other words, the sensing electrode 150 spans the deflection point at which the mass 120 begins to deflect due to residual stress, and the distance from the center of the circle 120b to the orthographic projection of the deflection point on the substrate 110 and the center 120b to the reference point C The distance is positively correlated.

With this configuration, the sensing electrode 150 senses the capacitance of the upward deflection and downward deflection of the mass 120 and compensates each other, which can reduce the influence of residual stress on the first capacitance value, and reduce the mass in the mass 120 The influence of the variation of the initial gap between the sensing electrodes 150 on the sensitivity of the microcomputer inductance measuring device 100 is described.

In addition, after the first capacitor C1 outputs the corresponding first capacitor value to the processing circuit, the value of the fixed capacitor (not shown) transmitted through the processing circuit can be corrected with the first capacitor value, and the processed signal is transmitted to the micro capacitor. Controller (Microcontroll Unit, MCU) (not shown).

Specifically, in the embodiment, the difference between the sensing electrodes 150 on the inner side of the circumference of the reference circle 120c and the outer sides of the reference circle 120c is preferably 0 or a minimum difference. .

With this configuration, the capacitance 152 of the upwardly flexed portion of the mass 120 can be substantially opposite to the capacitance 154 of the downwardly flexed portion of the mass 120. Etc., it is possible to prevent the residual stress from affecting the value of the first capacitor C1 and the sensitivity of the microcomputer inductance measuring device 100.

Referring to FIG. 1 and FIG. 2, the two ends of each elastic member 140 of the present embodiment are respectively fixed to the corresponding base portion 130 and the mass block 120, wherein the second connection point B is connected to the base portion 130 and one end of each elastic member 140. And the first connection point A is connected between the mass 120 and the other end of each elastic member 140.

In detail, each of the elastic members 140 surrounds the corresponding base portion 130, and the orthographic projections of the elastic members 140 on the substrate 110 are spiral. When the microcomputer inductance measuring device 100 senses the physical quantity, the first capacitor C1 outputs a corresponding first capacitance value, and the elastic force of each elastic member 140 can be restored to the initial position of the mass 120.

4 is a schematic diagram of a microcomputer inductance measuring device according to another embodiment of the present invention. Figure 5 is a side elevational view of the mass of Figure 4 deformed with residual stress. Referring to FIG. 4 and FIG. 5, the microcomputer inductance measuring device 200 of the embodiment is similar to the microcomputer inductance measuring device 100 of FIG. 1, and only the difference between the embodiment and the embodiment of FIG. 2 is described herein, wherein the same or Like reference numerals refer to like or like elements and are not described herein.

It should be noted that, in order to make the view simple, FIG. 5 omits the base 130 and the elastic member 140. In the present embodiment, the microcomputer inductance measuring device 200 includes a plurality of first sensing electrodes 250, and the first sensing electrodes 250 are disposed in line symmetry with respect to a symmetry line X passing through the center 120b and parallel to the substrate 110. And the first sensing electrodes 250 are passed through the circumference of the reference circle 120c.

In addition, the first sensing electrodes 250 and the masses 120 form a plurality of The first capacitor C1, and the first capacitors C1 output a corresponding plurality of first capacitor values to the processing circuit.

Further, since the first sensing electrode 250 of the embodiment is axially symmetric (mirror lined with a symmetry line X), the first capacitance value output by the first capacitor C1 is outputted by the first capacitor C1 whose axis is symmetrical. The first capacitance values can be matched and corrected.

In other words, the difference between the microcomputer inductance measuring device 200 of the embodiment and the microcomputer inductance measuring device 100 of FIG. 1 is that the first capacitor value outputted by the first capacitor C1 of FIG. 1 matches the value of the fixed capacitance of the processing circuit. The overall structure of the microcomputer-inductance measuring device 100 can be made simple and easy to manufacture, and the first capacitor value outputted by each of the first capacitors C1 of the embodiment can be the first capacitor outputted by the first capacitor C1 symmetric with the axis. The values are matched to each other to make the matching of the microcomputer inductance measuring device 200 better and not affected by the process variation.

In the above, the microcomputer inductance measuring device 200 of the embodiment further includes a plurality of second sensing electrodes 260. The second sensing electrodes 260 are disposed in line symmetry with respect to the symmetry line Y passing through the center 120b and parallel to the substrate 110, and the symmetry line X and the symmetry line Y are perpendicular to each other, and the circumference of the reference circle 120c also passes through these second Sensing electrode 260.

That is, these second sensing electrodes 260 are also axially symmetric (mirror mirrored by a symmetry line Y). Furthermore, the second sensing electrodes 260 and the masses 120 may also constitute a plurality of first capacitors C1. In this way, the plurality of first sensing electrodes 250 and the second sensing electrodes 260 are disposed on the two symmetry lines (ie, X and Y), which can increase the total amount of the first capacitance values, and help improve the microcomputer inductance measurement. Device 200 Sensing sensitivity on the symmetry line Z.

FIG. 6 is a schematic diagram of a microcomputer inductance measuring device according to still another embodiment of the present invention. Referring to FIG. 6, the microcomputer inductance measuring device 300 of the present embodiment is similar to the microcomputer inductance measuring device 200 of FIG. 5. Only the differences between the embodiment and the embodiment of FIG. 5 are described herein, wherein the same or similar components are used. The reference numerals denote the same or similar elements and will not be described again.

In the embodiment, the microcomputer inductance measuring device 300 further includes a plurality of first fixed sensing fingers 372 and a plurality of first movable sensing fingers 374. These first fixed sensing fingers 372 and these first movable sensing fingers 374 are located on both sides of the symmetry line Y.

Each of the first fixed sensing fingers 372 may be fixed to the substrate 110 at one or more points, and the first movable sensing fingers 374 are located between the plurality of first strip openings 122 on the mass 120. These first strip openings 122 are parallel to the line of symmetry X. The first fixed sensing fingers 372 and the first movable sensing fingers 374 are parallel to each other and constitute a plurality of second capacitors C2.

When the physical quantity is transmitted to the microcomputer inductance measuring device 300, the gap between the first fixed sensing fingers 372 and the first movable sensing fingers 374 on the symmetry line Y is changed. In other words, the overlapping area of each of the first fixed sensing fingers 372 and the corresponding first movable sensing finger 374 is changed. Therefore, the second capacitors C2 output corresponding plurality of second capacitance values to the processing circuit, so that the microcomputer inductance measuring device 300 senses the physical quantity of the biaxial (YZ).

In addition, the microcomputer inductance measuring device 300 further includes a plurality of second fixed sensing fingers 382 and a plurality of second movable sensing fingers 384. These second fixed sensing fingers 382 and these second movable sensing fingers 384 are located on both sides of the symmetry line X.

Each of the second fixed sensing fingers 382 can be fixed to the substrate 110 at one or more points, and the second movable sensing fingers 384 are located between the plurality of second strip openings 124 on the mass 120. These second strip openings 124 are parallel to the line of symmetry Y. The second fixed sensing fingers 382 and the second movable sensing fingers 384 are parallel to each other and constitute a plurality of third capacitors C3.

When the physical quantity is transmitted to the microcomputer inductance measuring device 300, the gap between the second fixed sensing fingers 382 and the second movable sensing fingers 384 on the symmetry line X is changed. In other words, the overlapping area of each of the second fixed sensing fingers 382 and the corresponding second movable sensing finger 384 is changed. Therefore, the third capacitors C3 correspondingly output a plurality of third capacitance values to the processing circuit, and further enable the microcomputer inductance measuring device 300 to become a three-axis (XYZ) sensor.

FIG. 7 is a flowchart of a method of manufacturing a microcomputer inductance measuring device according to an embodiment of the present invention. Referring to FIG. 1 , FIG. 3 and FIG. 7 , the manufacturing method of the microcomputer-inductance measuring device of the present embodiment is applicable to the manufacturing of the microcomputer-inductance measuring device 100 , and includes the following steps. First, in step S110 , a substrate 110 is provided. The material is, for example, silicon.

Next, in step S120, at least one sensing electrode 150 is deposited on the substrate 110 on the surface of the substrate 110, wherein the sensing electrode 150 is made of, for example, polysilicon. Then, in step S130, a plurality of bases 130, a plurality of elastic members 140 and a mass 120 are formed on the substrate 110, wherein the sensing electrodes 150 and the masses 120 constitute a first capacitor C1. Further, the material of the base portion 130, the elastic member 140, and the mass 120 is, for example, polycrystalline germanium.

Further, a base 130 and a mass are deposited on the substrate 110. 120, and the elastic member 140 is etched by a photomask (not shown) to connect the mass 120 to the corresponding base 130, and the base 130 is etched to connect the mass 120. In this way, the fabrication of the micro-integration measuring device 100 can be completed.

In the above, the orthographic projection of the centroid 120a of the mass 120 on the substrate 110 is the center 120b, and the center of each of the bases 130 and the corresponding elastic member 140 connected to the mass 120 is defined as the reference point C. A reference circle 120c is defined by the distance from the center 120b of the substrate 110 to the reference point C as a radius such that the difference between the inner and outer sensing electrode areas of the reference circle 120c is within a predetermined range.

When the mass 120 has residual stress, since the sensing electrodes 150 are disposed on both sides of the circumference of the reference circle 120c, the two sensing electrode areas of the measuring electrode 150 are respectively located outside the circumference of the reference circle 120c and inside thereof. In this manner, the capacitance 152 of the upwardly flexed portion of the mass 120 and the capacitance 154 of the downwardly deflected portion of the mass 120 compensate each other such that a similar capacitance value is sensed by the first capacitance C1 perpendicular to the substrate 110.

Thereby, the residual stress can be prevented from affecting the first capacitance value of the first capacitor C1, and the sensitivity of the microcomputer inductance measuring device 100 between the mass 120 and the sensing electrode 150 due to the difference in the initial gap can be avoided.

FIG. 8 is a flowchart of a method of manufacturing a microcomputer inductance measuring device according to another embodiment of the present invention. The manufacturing method of the microcomputer inductance measuring device of the embodiment is similar to the manufacturing method of the microcomputer inductance measuring device of FIG. 7, and only the difference between the embodiment and the embodiment of FIG. 7 is described herein, wherein the same or similar components and The step numbers represent the same or similar elements and steps, and are not described herein again.

Please refer to FIG. 4, FIG. 5 and FIG. 8, the microcomputer inductance measurement and installation of the embodiment. The manufacturing method is suitable for fabricating the microcomputer inductance measuring device 200, and includes the following steps: in step S240, a plurality of first sensing electrodes 250 are deposited on the surface of the substrate 110, wherein the first sensing electrodes 250 are opposite to each other. The center 120b is disposed in line symmetry with respect to the symmetry line X of the substrate 110.

Further, a plurality of second sensing electrodes 260 are further deposited on the surface of the substrate 110, wherein the second sensing electrodes 260 are disposed in line symmetry with respect to a symmetry line Y passing through the center 120b and parallel to the substrate 110, and The two symmetry lines X, Y are perpendicular to each other. In addition, the first sensing electrode 250, the second sensing electrode 260 and the mass 120 constitute a plurality of first capacitors C1.

Thereby, the first capacitance value of each of the first capacitors C1 is matched with the first capacitance value of the first capacitor C1 whose axis is symmetric (reflected by the symmetry line X, Y), and the total amount of the first capacitance values can be increased. To improve the sensing sensitivity of the microcomputer inductance measuring device 200 on the symmetry line Z.

FIG. 9 is a flowchart of a method of manufacturing a microcomputer inductance measuring device according to still another embodiment of the present invention. The manufacturing method of the microcomputer inductance measuring device of the embodiment is similar to the manufacturing method of the microcomputer inductance measuring device of FIG. 8. Here, only the difference between the embodiment and the embodiment of FIG. 8 is introduced, wherein the same or similar components and The step numbers represent the same or similar elements and steps, and are not described herein again.

Referring to FIG. 6 and FIG. 9 , the manufacturing method of the microcomputer-inductance measuring device of the present embodiment is applicable to the manufacturing of the microcomputer-inductance measuring device 300 , and includes the following steps: in step S350 , a plurality of bases 130 are respectively formed on the substrate 110 , a plurality of elastic members 140, a plurality of first fixed sensing fingers 372, a plurality of first movable sensing fingers 374, a plurality of second fixed sensing fingers 382 and a plurality of second movable sensing Means 384.

The first fixed sensing fingers 372 and the first movable sensing fingers 374 are parallel to each other and constitute a plurality of second capacitors C2, and the second fixed sensing fingers 382 and the second movable sensing fingers 384 are parallel to each other and constitute A plurality of third capacitors C3. In addition, the material of the first fixed sensing finger 372 , the first movable sensing finger 374 , the second fixed sensing finger 382 , and the second movable sensing finger 384 is, for example, a polysilicon.

Further, the base 130, the mass 120 and the first fixed sensing fingers 372 and the second fixed sensing fingers 382 are deposited on the substrate 110, wherein the first fixed sensing fingers 372 are located on both sides of the symmetry line Y, and The two fixed sensing fingers 382 are located on either side of the symmetry line X.

In the above, the embossing elastic member 140 is connected to the corresponding base portion 130 by the other reticle (not shown), the base portion 130 is connected to the mass 120, and the mass 120 is etched and the mass 120 is provided. A first strip-shaped opening 122 parallel to the line of symmetry X and a plurality of second strip-shaped openings 124 parallel to the line of symmetry Y. The first movable sensing fingers 374 are located between the first strip openings 122 and the second movable sensing fingers 384 are located between the second strip openings 124. In this way, the fabrication of the microcomputer inductance measuring device 300 can be completed.

When the physical quantity is transmitted to the microcomputer inductance measuring device 300, the gap between the first fixed sensing fingers 372 and the first movable sensing fingers 374 on the symmetry line Y is changed to correspondingly output a plurality of second capacitance values, and these The gap between the second fixed sensing finger 382 and the second movable sensing fingers 384 on the symmetry line X is changed to correspondingly output a plurality of third capacitance values. In this way, micro The machine inductance measuring device 300 is a multi-axial sensor.

In summary, the sensing electrode of the present invention is disposed at a position where the circumference of the reference circle passes, wherein the circumference of the reference circle is also a boundary between the upward deflection and the downward deflection when the mass has residual stress. . Therefore, when the mass has residual stress, the capacitance of the upwardly deflected portion of the mass compensates with the capacitance of the downwardly deflected portion of the mass. By this configuration, the first capacitance on the symmetry line can sense the similar capacitance to reduce the influence of the residual stress on the output first capacitance value, and reduce the initial gap between the mass block and the sensing electrode to measure the inductance of the microcomputer. The impact of the sensitivity of the device. In addition, when the sensing electrode is located on the inner side of the circumference of the reference circle and has a very small difference or substantially equal to the area of the two sensing electrodes on the outer side of the circumference, the better sensitivity of the microcomputer inductance measuring device can be embodied. In addition, when the sensing electrodes have multiple and are axisymmetric, the first capacitance values of the respective first capacitors and their axially symmetric first capacitance values may match each other, and the total amount of the first capacitance values may be increased to increase the micro-electromechanical Sensing sensitivity of the sensing device on the symmetry line. Furthermore, when the microcomputer inductance measuring device includes the first fixed sensing finger and the first movable sensing finger, and the second fixed sensing finger and the second movable sensing finger, the microcomputer inductance measuring device can sense the multi-axis The physical quantity to.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100, 200, 300‧‧‧Microcomputer Inductance Measuring Device

110‧‧‧Substrate

120‧‧‧mass

120a‧‧‧ centroid

120b‧‧‧ Center

120c‧‧‧ reference circle

122‧‧‧First strip opening

124‧‧‧Second strip opening

130‧‧‧ base

140‧‧‧Flexible parts

150‧‧‧Sensor electrode

152‧‧‧Capacity of the upward deflection

154‧‧‧Capacity of the downward deflection

250‧‧‧First sensing electrode

260‧‧‧Second sensing electrode

372‧‧‧First fixed sensing finger

374‧‧‧First movable sensing finger

382‧‧‧Second fixed sensing finger

384‧‧‧Second movable sensing finger

A‧‧‧First connection point

B‧‧‧second connection point

C‧‧‧ reference point

C1‧‧‧first capacitor

C2‧‧‧second capacitor

C3‧‧‧ third capacitor

S110~S350‧‧‧Steps

X, Y, Z‧‧ symmetry lines

FIG. 1 is a schematic diagram of a microcomputer inductance measuring device according to an embodiment of the present invention.

2 is a side view of the microcomputer inductance measuring device of FIG. 1.

Figure 3 is a partial side elevational view of the mass of Figure 1 with residual stress and deformation.

4 is a schematic diagram of a microcomputer inductance measuring device according to another embodiment of the present invention.

Figure 5 is a side elevational view of the mass of Figure 4 deformed with residual stress.

FIG. 6 is a schematic diagram of a microcomputer inductance measuring device according to still another embodiment of the present invention.

FIG. 7 is a flowchart of a method of manufacturing a microcomputer inductance measuring device according to an embodiment of the present invention.

FIG. 8 is a flowchart of a method of manufacturing a microcomputer inductance measuring device according to another embodiment of the present invention.

FIG. 9 is a flowchart of a method of manufacturing a microcomputer inductance measuring device according to still another embodiment of the present invention.

100‧‧‧Microcomputer Inductance Measuring Device

110‧‧‧Substrate

120‧‧‧mass

120a‧‧‧ centroid

120c‧‧‧ reference circle

130‧‧‧ base

140‧‧‧Flexible parts

150‧‧‧Sensor electrode

A‧‧‧First connection point

B‧‧‧second connection point

C‧‧‧ reference point

C1‧‧‧first capacitor

X, Y, Z‧‧ symmetry lines

Claims (15)

A microcomputer inductance measuring device comprises: a substrate; a mass; a plurality of bases disposed on the substrate; a plurality of elastic members disposed in the mass, each of the elastic members connecting the corresponding base and the mass And a plurality of sensing electrodes disposed on the substrate, wherein the at least one sensing electrode and the mass form a first capacitance, and the orthographic projection of the centroid of the mass on the substrate is a center A reference circle is defined such that the difference between the inner and outer sensing electrode areas of the circumference of the reference circle is within a predetermined range. The microcomputer-inductance measuring device according to claim 1, wherein the reference circle is based on a reference point between the base connecting the mass and the corresponding elastic member connecting the mass, and The reference circle is defined by the distance from the center of the circle to the reference points as a radius. The microcomputer-inductance measuring device of claim 1, wherein the at least one sensing electrode comprises a plurality of first sensing electrodes, wherein the first sensing electrodes are opposite to the substrate passing through the center and parallel to the substrate A first symmetry line is provided in line symmetry. The microcomputer-inductance measuring device of claim 3, wherein the at least one sensing electrode further comprises a plurality of second sensing electrodes, the second sensing electrodes are opposite to the substrate through the center and parallel to the substrate a second symmetry line is linearly symmetrically disposed, and the second symmetry line is opposite to the first symmetry line Mutual to each other. The microcomputer-inductance measuring device according to claim 4, further comprising a plurality of first fixed sensing fingers fixed on the substrate and a plurality of first movable sensing fingers, the first movable sensing fingers Located between the plurality of first strip-shaped openings on the mass and parallel to the first line of symmetry, the first fixed sensing fingers and the first movable sensing fingers form a plurality of second capacitors. The microcomputer-inductance measuring device of claim 5, wherein the first fixed sensing fingers and the first movable sensing fingers are located on opposite sides of the second symmetry line. The microcomputer-inductance measuring device according to claim 4, further comprising a plurality of second fixed sensing fingers fixed on the substrate and a plurality of second movable sensing fingers, the second movable sensing fingers Located between the plurality of second strip openings on the mass and parallel to the second symmetry line, the second fixed sensing fingers and the second movable sensing fingers form a plurality of third capacitors. The microcomputer-inductance measuring device of claim 7, wherein the second fixed sensing fingers and the second movable sensing fingers are located on opposite sides of the first symmetry line. The microcomputer-inductance measuring device according to claim 1, wherein the orthographic projection of each of the elastic members on the substrate is spiral. A method for manufacturing a microcomputer-inductance measuring device, comprising: providing a substrate; forming at least one sensing electrode on the substrate; and forming a plurality of bases, a plurality of elastic members and a mass on the substrate, wherein the elastic Pieces are disposed in the mass, and each of the elastic members is connected The base portion and the mass block, and the at least one sensing electrode and the mass block form a first capacitance, and the orthographic projection of the centroid of the mass on the substrate is a center and defines a reference circle. The difference between the two sensing electrode areas on the inner side and the outer side of the circumference of the reference circle is within a predetermined range. The method for manufacturing a microcomputer-inductance measuring device according to claim 10, wherein the reference circle is based on a reference between each of the base portions and the corresponding elastic member connected to the mass portion. Point and define the reference circle by the distance from the center of the circle to the reference points. The manufacturing method of the microcomputer-inductance measuring device of claim 10, wherein the forming the at least one sensing electrode comprises forming a plurality of first sensing electrodes, wherein the first sensing electrodes are opposite to The center is disposed in line symmetry with respect to a first symmetry line of the substrate. The method for manufacturing a microcomputer-inductance measuring device according to claim 12, wherein the forming the at least one sensing electrode further comprises forming a plurality of second sensing electrodes, the second sensing electrodes are opposite to each other The center is disposed in line symmetry with respect to a second line of symmetry of the substrate, and the second line of symmetry is perpendicular to the first line of symmetry. The manufacturing method of the microcomputer-inductance measuring device of claim 13, wherein the step of forming the mass comprises forming a plurality of first fixed sensing fingers and a plurality of first movable sensing fingers, the first The fixed sensing fingers are disposed on the substrate and are located on opposite sides of the second symmetry line, and the plurality of first strip openings are formed on the mass, and the first movable sensing fingers are located at the first Between the strip openings and parallel to the first symmetry line, the first fixed sensing fingers and the first movable sensing fingers are parallel to each other and constitute a plurality of Two capacitors. The method for manufacturing a microcomputer-inductance measuring device according to claim 14, wherein the step of forming the mass further comprises forming a plurality of second fixed sensing fingers and a plurality of second movable sensing fingers, The second fixed sensing finger is disposed on the substrate and is located at two sides of the first symmetry line, and a plurality of second strip openings are formed on the mass, and the second movable sensing fingers are located at the plurality of The second strip-shaped openings are parallel to the second line of symmetry, and the second fixed sensing fingers and the second movable sensing fingers are parallel to each other and constitute a plurality of third capacitors.