TWI460887B - - Google Patents
Info
- Publication number
- TWI460887B TWI460887B TW100142293A TW100142293A TWI460887B TW I460887 B TWI460887 B TW I460887B TW 100142293 A TW100142293 A TW 100142293A TW 100142293 A TW100142293 A TW 100142293A TW I460887 B TWI460887 B TW I460887B
- Authority
- TW
- Taiwan
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100142293A TW201322481A (en) | 2011-11-18 | 2011-11-18 | Solid-state light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100142293A TW201322481A (en) | 2011-11-18 | 2011-11-18 | Solid-state light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201322481A TW201322481A (en) | 2013-06-01 |
TWI460887B true TWI460887B (en) | 2014-11-11 |
Family
ID=49032500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100142293A TW201322481A (en) | 2011-11-18 | 2011-11-18 | Solid-state light emitting device |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW201322481A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200509411A (en) * | 2003-08-28 | 2005-03-01 | Genesis Photonics Inc | Aluminum indium gallium nitride light-emitting diode having wide bandwidth and solid-state white-light device |
TW200826314A (en) * | 2006-12-08 | 2008-06-16 | Genesis Photonics Inc | Vertical conductive LED and manufacture method thereof |
TW201133923A (en) * | 2010-03-17 | 2011-10-01 | Toshiba Kk | Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer |
-
2011
- 2011-11-18 TW TW100142293A patent/TW201322481A/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200509411A (en) * | 2003-08-28 | 2005-03-01 | Genesis Photonics Inc | Aluminum indium gallium nitride light-emitting diode having wide bandwidth and solid-state white-light device |
TW200826314A (en) * | 2006-12-08 | 2008-06-16 | Genesis Photonics Inc | Vertical conductive LED and manufacture method thereof |
TW201133923A (en) * | 2010-03-17 | 2011-10-01 | Toshiba Kk | Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer |
Also Published As
Publication number | Publication date |
---|---|
TW201322481A (en) | 2013-06-01 |