TWI460887B - - Google Patents

Info

Publication number
TWI460887B
TWI460887B TW100142293A TW100142293A TWI460887B TW I460887 B TWI460887 B TW I460887B TW 100142293 A TW100142293 A TW 100142293A TW 100142293 A TW100142293 A TW 100142293A TW I460887 B TWI460887 B TW I460887B
Authority
TW
Taiwan
Application number
TW100142293A
Other languages
Chinese (zh)
Other versions
TW201322481A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW100142293A priority Critical patent/TW201322481A/en
Publication of TW201322481A publication Critical patent/TW201322481A/en
Application granted granted Critical
Publication of TWI460887B publication Critical patent/TWI460887B/zh

Links

TW100142293A 2011-11-18 2011-11-18 Solid-state light emitting device TW201322481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100142293A TW201322481A (en) 2011-11-18 2011-11-18 Solid-state light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100142293A TW201322481A (en) 2011-11-18 2011-11-18 Solid-state light emitting device

Publications (2)

Publication Number Publication Date
TW201322481A TW201322481A (en) 2013-06-01
TWI460887B true TWI460887B (en) 2014-11-11

Family

ID=49032500

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100142293A TW201322481A (en) 2011-11-18 2011-11-18 Solid-state light emitting device

Country Status (1)

Country Link
TW (1) TW201322481A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200509411A (en) * 2003-08-28 2005-03-01 Genesis Photonics Inc Aluminum indium gallium nitride light-emitting diode having wide bandwidth and solid-state white-light device
TW200826314A (en) * 2006-12-08 2008-06-16 Genesis Photonics Inc Vertical conductive LED and manufacture method thereof
TW201133923A (en) * 2010-03-17 2011-10-01 Toshiba Kk Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200509411A (en) * 2003-08-28 2005-03-01 Genesis Photonics Inc Aluminum indium gallium nitride light-emitting diode having wide bandwidth and solid-state white-light device
TW200826314A (en) * 2006-12-08 2008-06-16 Genesis Photonics Inc Vertical conductive LED and manufacture method thereof
TW201133923A (en) * 2010-03-17 2011-10-01 Toshiba Kk Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer

Also Published As

Publication number Publication date
TW201322481A (en) 2013-06-01

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