TWI455867B - Nano-structure pn junction forming on a conductive thin film and a method thereof - Google Patents
Nano-structure pn junction forming on a conductive thin film and a method thereof Download PDFInfo
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- TWI455867B TWI455867B TW101102110A TW101102110A TWI455867B TW I455867 B TWI455867 B TW I455867B TW 101102110 A TW101102110 A TW 101102110A TW 101102110 A TW101102110 A TW 101102110A TW I455867 B TWI455867 B TW I455867B
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- layer
- nanostructure
- film layer
- conductive
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Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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TW101102110A TWI455867B (en) | 2012-01-19 | 2012-01-19 | Nano-structure pn junction forming on a conductive thin film and a method thereof |
Applications Claiming Priority (1)
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TW101102110A TWI455867B (en) | 2012-01-19 | 2012-01-19 | Nano-structure pn junction forming on a conductive thin film and a method thereof |
Publications (2)
Publication Number | Publication Date |
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TW201331118A TW201331118A (en) | 2013-08-01 |
TWI455867B true TWI455867B (en) | 2014-10-11 |
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Application Number | Title | Priority Date | Filing Date |
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TW101102110A TWI455867B (en) | 2012-01-19 | 2012-01-19 | Nano-structure pn junction forming on a conductive thin film and a method thereof |
Country Status (1)
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TW (1) | TWI455867B (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200633277A (en) * | 2005-03-15 | 2006-09-16 | Commissariat Energie Atomique | Method for producing a nanostructured pn junction light-emitting diode and diode obtained by such a method |
US20080087919A1 (en) * | 2006-10-08 | 2008-04-17 | Tysoe Steven A | Method for forming nitride crystals |
TW201010094A (en) * | 2008-08-29 | 2010-03-01 | Univ Nat Taiwan | Nano or micro-structured PN junction diode array thin-film solar cell and manufacturing method thereof |
TW201144212A (en) * | 2010-02-25 | 2011-12-16 | Pinon Technologies Inc | Group IV metal or semiconductor nanowire fabric |
-
2012
- 2012-01-19 TW TW101102110A patent/TWI455867B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200633277A (en) * | 2005-03-15 | 2006-09-16 | Commissariat Energie Atomique | Method for producing a nanostructured pn junction light-emitting diode and diode obtained by such a method |
US20080087919A1 (en) * | 2006-10-08 | 2008-04-17 | Tysoe Steven A | Method for forming nitride crystals |
TW201010094A (en) * | 2008-08-29 | 2010-03-01 | Univ Nat Taiwan | Nano or micro-structured PN junction diode array thin-film solar cell and manufacturing method thereof |
TW201144212A (en) * | 2010-02-25 | 2011-12-16 | Pinon Technologies Inc | Group IV metal or semiconductor nanowire fabric |
Also Published As
Publication number | Publication date |
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TW201331118A (en) | 2013-08-01 |
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MM4A | Annulment or lapse of patent due to non-payment of fees |