TWI452946B - Plasma reaction device - Google Patents

Plasma reaction device Download PDF

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TWI452946B
TWI452946B TW098145718A TW98145718A TWI452946B TW I452946 B TWI452946 B TW I452946B TW 098145718 A TW098145718 A TW 098145718A TW 98145718 A TW98145718 A TW 98145718A TW I452946 B TWI452946 B TW I452946B
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plasma
reaction chamber
reaction
gas
microwave
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TW098145718A
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TW201123999A (en
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Univ Nat Yunlin Sci & Tech
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電漿反應裝置Plasma reactor

本發明係有關於一種反應裝置,特別是指一種電漿反應裝置。The present invention relates to a reaction apparatus, and more particularly to a plasma reaction apparatus.

近年來世界各地因氣候暖化而發生多次天災,其對於人類的生活環境造成巨大的影響,特別是生命財產的損失,更是深深地警惕人類的生活環境正在逐漸惡化。氣候暖化主要係歸咎於溫室氣體的排放,其中溫室氣體主要包含二氧化碳、甲烷、六氟化硫、氧化亞氮、全氟化物(PFC)、氫氟碳化物等六種管制氣體。在台灣,半導體業是近二十年來帶動國內經濟快速成長的最主要工業,然而半導體業大量採用全氟化物,例如:CF4 、C2 F6 與NF3 等全氟化物被廣泛使用在乾蝕刻(dry etch)或化學氣相沈積(CVD)後反應腔的清潔(cleaning)用途上;特別是在CVD鍍膜時,僅有大約10%之氣體被利用,其餘90%之氣體則以廢氣排出。雖然半導體製程之全氟化物排放量不及其他溫室氣體,但是因為全氟化物在大氣中的存活時間和溫室效應暖化潛勢值遠大於其他溫室氣體,如果長期排放而不加以管制處理,終將成為殘害地球環境的主要兇手。因此如何分解並移除全氟化物,長久以來一直是值得人們深入探討的課題。In recent years, many natural disasters have occurred in the world due to climate warming. It has had a tremendous impact on the living environment of human beings, especially the loss of life and property. It is also deeply vigilant that the living environment of human beings is gradually deteriorating. Climate warming is mainly attributed to greenhouse gas emissions. The greenhouse gases mainly include six kinds of regulated gases such as carbon dioxide, methane, sulfur hexafluoride, nitrous oxide, perfluorinated matter (PFC) and hydrofluorocarbon. In Taiwan, the semiconductor industry is the most important industry that has driven the rapid growth of the domestic economy in the past two decades. However, the semiconductor industry uses a large amount of perfluorinated substances. For example, perfluorinated compounds such as CF 4 , C 2 F 6 and NF 3 are widely used in drying. Cleaning of the reaction chamber after dry etch or chemical vapor deposition (CVD); especially in CVD coating, only about 10% of the gas is used, and the remaining 90% of the gas is exhausted . Although the perfluorinated emissions of semiconductor processes are inferior to those of other greenhouse gases, because the lifetime of perfluorinated substances in the atmosphere and the greenhouse warming potential are much larger than other greenhouse gases, if long-term emissions are not regulated, they will eventually Become the main murderer of the global environment. Therefore, how to decompose and remove perfluorinated compounds has long been a topic worthy of further discussion.

為了分解與移除全氟化物,目前大致發展出以下三種方式:In order to decompose and remove perfluorinated substances, the following three ways have been developed:

(1)觸媒裂解:利用化學吸附、氧化及水洗方式,將有毒、有害之氣體與物質裂解;(1) Catalytic cracking: the use of chemical adsorption, oxidation and water washing to sterilize toxic and harmful gases and substances;

(2)燃燒、加熱破壞:將有害廢棄物加熱至高溫,使其化合物之化學鍵結被破壞分解而成為無害物質,達到處理之目的;以及(2) Combustion, heating damage: heating harmful waste to a high temperature, causing the chemical bond of the compound to be destroyed and decomposed into harmless substances for the purpose of treatment;

(3)電漿處理:一般電漿產生的方式,是將所需之氣體通入一容器內,於某一氣壓下,加入直流電源、交流電源、射頻(Radio Frequency)或微波(Microwave)之能量來源,利用電容式、電感式、或電磁場交互作用的方式使氣體崩潰(Breakdown)游離而成為電漿,可將廢氣之化學鍵結破壞分解,再進一步處理成對環境無害之物質。(3) Plasma treatment: Generally, the plasma is generated by introducing the required gas into a container and adding a DC power source, an AC power source, a radio frequency (Radio Frequency) or a microwave (Microwave) under a certain pressure. The energy source uses a capacitive, inductive, or electromagnetic field interaction to break down the gas to become a plasma, which can destroy the chemical bond of the exhaust gas and further process it into a material that is harmless to the environment.

針對上述發展出的技術而言,以電漿處理的成效最佳,所以採用電漿處理全氟化物一直是目前全氟化物處理的重心。一般微波頻率約在2.456GHz,在常溫下,當整個反應系統維持在低壓狀態時,電子有較大的平均自由徑,因此被電場加速時可獲得較快的加速度,以增加電漿離子的游離率,而達到較高的電漿密度,進而使電漿中各種游離的自由分子及自由基的數量大幅增加。一般低溫電漿系統中,最佳的電漿產生環境為接近真空,然而通入待處理氣體後反應腔的壓力會上升,是以如何維持在適當的低壓操作環境,不致使電漿熄滅、同時又能使電漿反應持續且穩定地進行就顯得相當重要。此時用於隔離導波管與反應腔室的隔離件就成為維持電漿反應成功與否的關鍵角色,它必須同時達到絕緣、使微波通過、耐熱、耐蝕且能維持反應腔體低壓之多重效果。In view of the above developed technologies, the effect of plasma treatment is the best, so the use of plasma to treat perfluorinated compounds has been the focus of perfluorination treatment. Generally, the microwave frequency is about 2.456 GHz. At normal temperature, when the whole reaction system is maintained at a low pressure state, the electron has a large mean free path, so that a faster acceleration can be obtained when the electric field is accelerated, so as to increase the plasma ion free. The rate, while achieving a higher plasma density, further increases the number of free free molecules and free radicals in the plasma. In a typical low-temperature plasma system, the optimal plasma generation environment is close to vacuum. However, the pressure of the reaction chamber rises after the gas to be treated is introduced, so that it is maintained in an appropriate low-pressure operating environment, so that the plasma is not extinguished. It is also very important that the plasma reaction can be carried out continuously and stably. At this time, the isolation member for isolating the waveguide and the reaction chamber becomes a key role in maintaining the success of the plasma reaction. It must simultaneously achieve insulation, microwave passage, heat resistance, corrosion resistance and maintain the low pressure of the reaction chamber. effect.

由於隔離件會同時受到微波放電時的燒灼與電漿的腐蝕,所以一般電漿反應裝置中磨耗最為嚴重的元件也是隔離件,且一般隔離件為採用封蓋之結構,而將反應腔室與導波管隔離,如此微波電漿系統中,需要發展出一種耐磨耗且隔離效果佳的隔離件,以減少隔離件的維修次數,而增加微波電漿的工作效率。Since the spacer is subjected to both cauterization and plasma corrosion during microwave discharge, the most severely worn component of the plasma reactor is also a spacer, and the general spacer is a structure using a cover, and the reaction chamber is The waveguide is isolated. In such a microwave plasma system, it is necessary to develop a spacer with good wear resistance and good isolation effect, so as to reduce the number of maintenance of the spacer and increase the working efficiency of the microwave plasma.

針對上述的問題,本發明提出一種電漿反應裝置,其利用一柱狀隔離件隔離導波管與反應腔室,並讓導波天線得以通過,以維持反應腔室的壓力於低壓狀態,且,由於柱狀隔離件直接接設於導波管與反應腔室的端口之間,使電漿反應裝置之外部空氣較不易流至反應腔室中。In view of the above problems, the present invention provides a plasma reaction apparatus that uses a column spacer to isolate a waveguide and a reaction chamber, and allows the waveguide antenna to pass to maintain the pressure of the reaction chamber at a low pressure state, and Since the column spacer is directly connected between the waveguide and the port of the reaction chamber, the external air of the plasma reactor is less likely to flow into the reaction chamber.

本發明之主要目的,在於提供一種電漿反應裝置,其係利用一柱狀隔離件直接接設於圓形導波管與反應腔室的端口之間,以維持氣密度。SUMMARY OF THE INVENTION A primary object of the present invention is to provide a plasma reaction apparatus which is directly connected between a circular waveguide and a port of a reaction chamber by a column spacer to maintain a gas density.

本發明之次要目的,在於提供一種電漿反應裝置,其更利用至少一對耐熱墊圈,填補柱狀隔離件內外兩側的縫隙,以避免空氣經縫隙流入反應腔室。A secondary object of the present invention is to provide a plasma reaction apparatus which further utilizes at least one pair of heat-resistant gaskets to fill gaps between the inner and outer sides of the columnar spacer to prevent air from flowing into the reaction chamber through the slit.

本發明提供一種電漿反應裝置,其藉由一微波產生裝置連接一導波單元,該導波單元包含一方形導波管與一圓形導波管,該方形導波管經水平與垂直短路迴路控制轉向後使自身所接收之微波進入圓形導波管,該圓形導波管之一連接端口經一柱狀隔離件連接一反應腔室之一上端口,一中央天線穿設該圓形導波管、柱狀隔離件與反應腔室,且柱狀隔離件內外側設有至少一對耐熱墊圈,以增加氣密度,其中該微波產生裝置係產生微波至方形與圓形偶合之導波管,再經中央天線經穿過柱狀隔離件而傳導至反應腔室,微波使反應腔室所接收之反應氣體轉為激發態而形成電漿。本發明藉由柱狀隔離件維持適當之電漿操作環境並進而延長操作時間,且本案之柱狀隔離件可藉由耐熱墊圈填補縫隙,以維持真空度,進而增加微波電漿的工作效率。此外,本發明更可藉由一氣體混合器混合其他氣體,除可促進全氟化物氣體之分解外,還可稀釋反應氣體並兼作為虛擬負荷(dummy load),以避免微波能量過於集中於柱狀隔離件,進而延長柱狀隔離件的使用壽命。The invention provides a plasma reaction device, which is connected to a waveguide unit by a microwave generating device. The waveguide unit comprises a square waveguide tube and a circular waveguide tube, and the square waveguide tube is short-circuited horizontally and vertically. After the loop control is turned, the microwave received by the loop enters the circular waveguide, and one of the connecting ports of the circular waveguide is connected to a port on one of the reaction chambers via a column spacer, and a central antenna passes through the circle. a waveguide, a column spacer and a reaction chamber, and at least one pair of heat resistant gaskets are provided on the inner side of the column spacer to increase the gas density, wherein the microwave generating device generates a microwave to square and circular coupling The wave tube is then conducted to the reaction chamber through the central spacer through the column spacer, and the microwave converts the reaction gas received by the reaction chamber into an excited state to form a plasma. The present invention maintains a proper plasma operating environment by column spacers and thereby prolongs the operation time, and the column spacer of the present invention can fill the gap by the heat resistant gasket to maintain the vacuum degree, thereby increasing the working efficiency of the microwave plasma. In addition, the present invention can further mix other gases by a gas mixer, in addition to promoting the decomposition of the perfluorinated gas, and can also dilute the reaction gas and also serve as a dummy load to prevent the microwave energy from being too concentrated on the column. The spacers further extend the service life of the column spacers.

茲為使 貴審查委員對本發明之結構特徵及所達成之功效更有進一步之瞭解與認識,謹佐以較佳之實施例圖及配合詳細之說明,說明如後:For a better understanding and understanding of the structural features and the achievable effects of the present invention, please refer to the preferred embodiment and the detailed description.

本發明係有關於一種電漿反應裝置,其藉由微波驅使低壓環境下的反應氣體激發、解離或離子化,而轉為電漿,並在反應腔室中進行電漿反應,本發明之電漿反應是指反應腔室中產生電漿火炬,但本發明所述之電漿反應除了形成電漿火炬,更可為其他型態之反應,例如:常壓反應、高溫反應等。The invention relates to a plasma reaction device which is excited by a microwave to excite, dissociate or ionize a reaction gas in a low pressure environment, and is converted into a plasma, and a plasma reaction is carried out in the reaction chamber. The slurry reaction refers to the generation of a plasma torch in the reaction chamber. However, in addition to the formation of a plasma torch, the plasma reaction of the present invention may be other types of reactions, such as atmospheric pressure reaction, high temperature reaction, and the like.

請一併參閱第一A圖至第一D圖,其為本發明之電漿反應裝置之一實施例的結構示意圖。如圖所示,本發明之電漿反應裝置10包含一微波產生裝置12、一導波單元、至少一反應腔室16、一柱狀隔離件18、一中央天線20與一氣體輸入裝置22,其中該導波單元包含一圓形導波管13、一方形導波管14。微波產生裝置12連接該方形導波管14,該方形導波管14具有一連接端口142,反應腔室16具有一上端口162,該上端口162相對於該連接端口142而相互接設,柱狀隔離件18設置於該連接端口142與該上端口162之間並隔離該連接端口142與該上端口162,中央天線20穿設該圓形導波管13、該柱狀隔離件18與該反應腔室16。其中該微波產生裝置12產生微波至方形導波管14,該方形導波管14接收該微波,經水平短路迴路144與垂直短路迴路132控制轉向後進入圓形導波管13並導引至該中央天線20,該中央天線20導引該微波穿過該柱狀隔離件18而導引至該反應腔室16,在低壓下該微波驅使該反應氣體於該反應腔室16形成一電漿,氣體輸入裝置22連接該反應腔室16,以輸入該反應氣體至該反應腔室16。Please refer to FIG. 1A to FIG. 1D together, which is a schematic structural view of an embodiment of the plasma reactor of the present invention. As shown, the plasma reactor 10 of the present invention comprises a microwave generating device 12, a waveguide unit, at least one reaction chamber 16, a column spacer 18, a central antenna 20 and a gas input device 22, The waveguide unit includes a circular waveguide 13 and a square waveguide 14. The microwave generating device 12 is connected to the square waveguide tube 14. The square waveguide tube 14 has a connection port 142. The reaction chamber 16 has an upper port 162. The upper port 162 is connected to the connection port 142. The spacer 18 is disposed between the connection port 142 and the upper port 162 and isolates the connection port 142 from the upper port 162. The central antenna 20 passes through the circular waveguide 13, the column spacer 18 and the Reaction chamber 16. The microwave generating device 12 generates a microwave to square waveguide 14, the square waveguide 14 receives the microwave, and is controlled by the horizontal short circuit 144 and the vertical short circuit 132 to enter the circular waveguide 13 and guided to the microwave waveguide 14 The central antenna 20 guides the microwave through the column spacer 18 to be guided to the reaction chamber 16. At a low pressure, the microwave drives the reaction gas to form a plasma in the reaction chamber 16. A gas input device 22 is connected to the reaction chamber 16 to input the reaction gas to the reaction chamber 16.

接續上述,本實施例之反應氣體係包含全氟化物之氣體、揮發性有機物或其他半導體殘餘氣體。本發明之柱狀隔離件18的材料為石英,其具熔點高、膨脹係數低、耐腐蝕、微波可穿透之優點,所以非常適用於氣壓隔離用途,可避免溫度改變而導致柱狀隔離件18之外形明顯收縮膨脹,可有效隔離圓形導波管13與反應腔室16,進而避免外界氣體洩漏至反應腔室16中。該中央天線20的材料為不鏽鋼。中央天線尖端202材料為不鏽鋼、釷鎢或鑭鎢,該中央天線尖端202之外形為一任意幾何形狀,例如一子彈形、一星形、一樹枝狀、一圓柱狀或一圓錐狀。本發明之反應腔室之材料為不鏽鋼,可耐腐蝕。此外,該圓形導波管13包含一垂直可調式短路迴路132,而該方形導波管14則包含一水平可調式短路迴路144,該垂直可調式短路迴路132與該水平可調式短路迴路144可控制該微波之相位與一電抗性負載。Following the above, the reaction gas system of the present embodiment contains a perfluorinated gas, a volatile organic compound or other semiconductor residual gas. The material of the columnar spacer 18 of the present invention is quartz, which has the advantages of high melting point, low expansion coefficient, corrosion resistance and microwave penetration, so it is very suitable for pneumatic isolation purposes, and can avoid the temperature change and cause the column spacers. The outer shape of the 18 is obviously contracted and expanded, and the circular waveguide 13 and the reaction chamber 16 can be effectively isolated, thereby preventing the outside air from leaking into the reaction chamber 16. The material of the center antenna 20 is stainless steel. The central antenna tip 202 is made of stainless steel, tantalum tungsten or tantalum tungsten. The central antenna tip 202 is shaped as an arbitrary geometry, such as a bullet shape, a star shape, a dendritic shape, a cylindrical shape or a conical shape. The reaction chamber of the present invention is made of stainless steel and is corrosion resistant. In addition, the circular waveguide 13 includes a vertically adjustable short circuit 132, and the square waveguide 14 includes a horizontally adjustable short circuit 144, the vertically adjustable short circuit 132 and the horizontal adjustable short circuit 144 The phase of the microwave can be controlled with a reactive load.

復參閱第一A圖與第一B圖,該反應腔室16內更懸置一石英製懸置件164,其用於容置至少一用於電漿反應之催化劑或至少一接受電漿表面處理之待處理物件,且本發明之反應腔室16更以一封隔板166封住反應腔室之一下端口168。復參閱第一C圖,本發明之柱狀隔離件18之內外側分別設置至少一外耐熱墊圈182與至少一內耐熱墊圈184,本實施例之柱狀隔離件18係設置三對耐熱墊圈182、184以避免柱狀隔離件18與連接端口142之間有間隙,以及柱狀隔離件18與上端口162之間有間隙;另外亦避免中央天線20穿設於柱狀隔離件18之位置有間隙。另外,如第一D圖所示,本發明之電漿反應裝置10更包含一冷卻裝置、一取樣分析單元26、一尾氣中和裝置28、一壓力量測單元30、一氣壓幫浦32與一取樣幫浦33,其中冷卻裝置包含一循環冷凍器24與一冷卻循環模組25(於第四圖說明之)。反應腔室16更設置有至少一冷卻水夾套,本實施例之反應腔室16之外側設有一第一冷卻水夾套242、一第二冷卻水夾套243與一第三冷卻水夾套244,第一冷卻水夾套242具有一輸入口2422與一輸出口2424,第二冷卻水夾套243具有一輸入口2432與一輸出口2434,第三冷卻水夾套244具有一輸入口2442與一輸出口2444,且循環冷凍器24更連接至中央天線20,該中央天線20具有一循環管路204(如第一B圖所示),其連接一循環入口206與一循環出口208,該循環入口206連接該循環冷凍器24,該循環出口208連接輸入口2422,輸出口2424連接輸入口2432,輸出口2434連接輸入口2442,輸出口2444連接循環冷凍器24,因此本發明之電漿反應裝置10藉由循環冷凍器24分別冷卻反應腔室16與中央天線20,而避免反應腔室16與中央天線20的溫度過高而燒毀,循環冷凍器24內部有自動溫度控制器可調節循環水溫。Referring to the first A diagram and the first B diagram, a quartz suspension 164 is further suspended in the reaction chamber 16 for accommodating at least one catalyst for plasma reaction or at least one receiving plasma surface. The object to be treated is processed, and the reaction chamber 16 of the present invention further seals a lower port 168 of the reaction chamber with a partition 166. Referring to FIG. 1C, at least one outer heat-resistant gasket 182 and at least one inner heat-resistant gasket 184 are respectively disposed on the inner and outer sides of the columnar spacer 18 of the present invention. The columnar spacers 18 of the present embodiment are provided with three pairs of heat-resistant gaskets 182. 184, to avoid a gap between the column spacer 18 and the connection port 142, and a gap between the column spacer 18 and the upper port 162; also avoid the central antenna 20 is disposed at the position of the column spacer 18 gap. In addition, as shown in FIG. D, the plasma reactor 10 of the present invention further includes a cooling device, a sampling and analyzing unit 26, an exhaust gas neutralization device 28, a pressure measuring unit 30, and a pneumatic pump 32. A sampling pump 33, wherein the cooling device comprises a circulation chiller 24 and a cooling cycle module 25 (described in the fourth figure). The reaction chamber 16 is further provided with at least one cooling water jacket. On the outer side of the reaction chamber 16 of the embodiment, a first cooling water jacket 242, a second cooling water jacket 243 and a third cooling water jacket are disposed. 244, the first cooling water jacket 242 has an input port 2422 and an output port 2424. The second cooling water jacket 243 has an input port 2432 and an output port 2434. The third cooling water jacket 244 has an input port 2442. And an output port 2444, and the circulation chiller 24 is further connected to the central antenna 20, the central antenna 20 has a circulation line 204 (as shown in FIG. B) connected to a circulation inlet 206 and a circulation outlet 208. The circulation inlet 206 is connected to the circulation chiller 24, the circulation outlet 208 is connected to the input port 2422, the output port 2424 is connected to the input port 2432, the output port 2434 is connected to the input port 2442, and the output port 2444 is connected to the circulation chiller 24, so the electric power of the present invention The slurry reaction device 10 respectively cools the reaction chamber 16 and the central antenna 20 by the circulation chiller 24, and avoids the temperature of the reaction chamber 16 and the central antenna 20 being excessively burned, and the internal temperature controller of the circulation chiller 24 is adjustable. Circulating water temperature.

由於本實施例之循環冷凍器24為一單向泵,因此本案之循環冷凍器24經中央天線20、第一冷卻水夾套242、第二冷卻水夾套243與第三冷卻水夾套244再循環回到循環冷凍器24,以構成一單循環冷卻線路;其中循環冷凍器24係輸送一第一流體通過中央天線20、第一冷卻水夾套242、第二冷卻水夾套243與第三冷卻水夾套244,以冷卻中央天線20、第一冷卻水夾套242、第二冷卻水夾套243與第三冷卻水夾套244。第一冷卻水夾套242、第二冷卻水夾套243與第三冷卻水夾套244係吸收反應腔室16所散發的熱。本實施例之第一流體為水、乙二醇水溶液、液態氨或其他冷煤。另外,壓力量測單元30、氣壓幫浦32與取樣幫浦33皆是連接至該反應腔室16,氣壓幫浦32更連接至尾氣中和裝置28,取樣幫浦33更連接至取樣分析單元26;於電漿反應裝置10啟動時,取樣分析單元26係透過取樣幫浦33取樣該電漿所生成之一反應生成物並分析,該取樣分析單元26為一 氣相層析儀(GC)及一傅立葉轉換紅外光譜儀(FTIR),本實施例之取樣幫浦33為一乾式抽氣泵,其係與氣體幫浦32經由一三叉管連接至反應腔室16,且取樣分析單元26出口係藉由氣體之分岔管線與氣壓幫浦32出口相連;此外,第一觀測口170、第二觀測口172、第三觀測口174、均可接設一熱電偶或一光放射光譜儀(OES),熱電偶係量測反應腔室16內之溫度,光放射光譜儀係量測電漿之光放射光譜以便判讀反應腔室16內之電漿狀態。Since the circulation chiller 24 of the present embodiment is a one-way pump, the circulating chiller 24 of the present invention passes through the central antenna 20, the first cooling water jacket 242, the second cooling water jacket 243 and the third cooling water jacket 244. Recirculating back to the recirculating chiller 24 to form a single-cycle cooling circuit; wherein the recirculating chiller 24 delivers a first fluid through the central antenna 20, the first cooling water jacket 242, the second cooling water jacket 243, and the The three cooling water jackets 244 cool the central antenna 20, the first cooling water jacket 242, the second cooling water jacket 243, and the third cooling water jacket 244. The first cooling water jacket 242, the second cooling water jacket 243 and the third cooling water jacket 244 absorb heat radiated from the reaction chamber 16. The first fluid of this embodiment is water, aqueous glycol solution, liquid ammonia or other cold coal. In addition, the pressure measuring unit 30, the pneumatic pump 32 and the sampling pump 33 are all connected to the reaction chamber 16, the pneumatic pump 32 is further connected to the exhaust gas neutralization device 28, and the sampling pump 33 is further connected to the sampling analysis unit. 26; when the plasma reaction device 10 is started, the sampling analysis unit 26 samples and analyzes a reaction product generated by the plasma through the sampling pump 33, and the sampling analysis unit 26 is a Gas chromatograph (GC) and a Fourier transform infrared spectrometer (FTIR), the sampling pump 33 of this embodiment is a dry pump, which is connected to the gas chamber 32 via a trifurcation tube to the reaction chamber 16 And the outlet of the sampling and analyzing unit 26 is connected to the outlet of the pneumatic pump 32 by a gas separation line; in addition, a thermocouple is connected to the first observation port 170, the second observation port 172, and the third observation port 174. Or a light emission spectrometer (OES), the thermocouple is used to measure the temperature in the reaction chamber 16, and the light emission spectrometer measures the light emission spectrum of the plasma to interpret the state of the plasma in the reaction chamber 16.

當,這些觀測口不連接儀錶時,則可以用具有特殊孔徑設計的SS-316L保護蓋之石英玻璃窗密封住,以便對反應腔室16中的電漿反應進行直接觀測。尾氣中和裝置28用於中和該電漿所生成之尾氣,其構造係藉由一組單支以上含有鹼性過飽合溶液之濾罐,將分解全氟化物所產生之酸性氣體(如HF、COF2 等)以氣泡形式通過上述溶液,藉由中和反應使上述酸性氣體,並以鹽類之形式沉澱在濾罐底部;其後方有清水濾罐,可進一步洗滌過鹼性之氣體,以使排出氣體符合環保標準。上述濾液中含有指示劑,可於濾液變色時添加鹼性物質或更換濾液;另外其前方有防止逆流之空濾罐設計,可保護真空泵避免液體倒抽而受損。此中和裝置整體為透明工業塑膠材質所製成,以方便觀察。壓力量測單元30係量測該反應腔室16之壓力,藉由此量測值可調整氣體輸入裝置22之進氣流量來控制該反應腔室16之該壓力,本實施例為維持操作壓力於低壓狀態,如0.001~150托爾(torr)。氣壓幫浦32將反應腔室16中的反應後氣體抽出,該氣壓幫浦32為一濕式或乾式抽氣泵,本實施例係氣壓幫浦32連接尾氣中和裝置28。When these observator ports are not connected to the meter, they can be sealed with a quartz glass window with a special aperture design SS-316L protective cover for direct observation of the plasma reaction in the reaction chamber 16. The tail gas neutralization device 28 is used for neutralizing the tail gas generated by the plasma, and the structure is to decompose the acid gas generated by the perfluorinated product by a group of single or more filter tanks containing an alkaline supersaturated solution (such as HF, COF 2, etc.) pass through the above solution in the form of bubbles, and the acid gas is precipitated in the form of a salt by the neutralization reaction at the bottom of the canister; there is a water filter tank at the rear to further wash the alkaline gas. In order to make the exhaust gas meet environmental standards. The filtrate contains an indicator, which can add an alkaline substance or replace the filtrate when the filtrate is discolored. In addition, there is an empty canister design for preventing backflow in front of the filtrate, which can protect the vacuum pump from liquid pumping and damage. The neutralization device is made of transparent industrial plastic material for easy observation. The pressure measuring unit 30 measures the pressure of the reaction chamber 16, and the pressure of the gas input device 22 can be adjusted to control the pressure of the reaction chamber 16 by using the measured value. In this embodiment, the operating pressure is maintained. In the low pressure state, such as 0.001 ~ 150 torr (torr). The pneumatic pump 32 draws the post-reaction gas in the reaction chamber 16 which is a wet or dry pump. In this embodiment, the pneumatic pump 32 is connected to the exhaust gas neutralization device 28.

請參閱第二圖,其為本發明之微波產生裝置之方塊圖。如圖所示,本發明之微波產生裝置12包含一磁控管122、一微波波形監視單元124、一微波調整單元126、一電源供應器128與一隔離器130。其中磁控管122連接電源供應器128,以產生微波;隔離器130連接磁控管122,用以阻擋反射微波,避免傷害磁控管122;微波波型監視單元124連接該電源供應器128與該隔離器130,以監視該微波之入射波與反射波波形;微波調整單元126連接該隔離器130,並藉由導波管與反應腔室16相接,操作員依據該微波波形監視單元124之微波波形微調該微波調整單元126。電漿開啟前先 設定電源之輸出功率與輸出頻率,以決定吾人所要之微波入射波形;電漿開啟時利用微波調整單元126校正微波之電場、磁場與電阻抗,藉由微波波型監視單元124來觀測電場、磁場與電阻抗變化時微波反射波形的改變情形,藉此調整吾人所要之電漿功率。而在實驗中,可由反射波形的變化,得知電漿自身效能的高低;而該反射波形的穩定度,可用以判定電漿的狀態是否穩定以避免回火情形發生。Please refer to the second figure, which is a block diagram of the microwave generating apparatus of the present invention. As shown in the figure, the microwave generating device 12 of the present invention comprises a magnetron 122, a microwave waveform monitoring unit 124, a microwave adjusting unit 126, a power supply 128 and an isolator 130. The magnetron 122 is connected to the power supply 128 to generate microwaves; the isolator 130 is connected to the magnetron 122 for blocking the reflected microwaves to avoid damaging the magnetron 122; the microwave mode monitoring unit 124 is connected to the power supply 128 The isolator 130 monitors the incident wave and the reflected wave waveform of the microwave; the microwave adjusting unit 126 is connected to the isolator 130, and is connected to the reaction chamber 16 via a waveguide, and the operator monitors the unit according to the microwave waveform. The microwave waveform fine-tunes the microwave adjustment unit 126. Before the plasma is turned on The output power and the output frequency of the power source are set to determine the microwave incident waveform that is required by us; when the plasma is turned on, the microwave adjusting unit 126 is used to correct the electric field, the magnetic field and the electrical impedance of the microwave, and the microwave waveform monitoring unit 124 is used to observe the electric field and the magnetic field. The change of the microwave reflection waveform when the electrical impedance changes, thereby adjusting the plasma power that we want. In the experiment, the performance of the plasma itself can be known from the change of the reflected waveform; and the stability of the reflected waveform can be used to determine whether the state of the plasma is stable to avoid tempering.

請參閱第三A圖,其為本發明之氣體輸入裝置之方塊圖。如圖所示,本發明之氣體輸入裝置22包含至少一氣體儲存單元222、至少一過濾器230、至少一質流控制器(MFC)232、至少一氣動閥234、至少一逆止閥236與一氣體混合器238。其中本實施例係以複數氣體儲存單元222、224、226、228、複數過濾器230、複數質流控制器232、複數氣動閥234、複數逆止閥236為例;且氣體儲存單元222、224、226、228於本實施例為鋼瓶,以第一氣體儲存單元222儲存該反應氣體,第二、第三、第四氣體儲存單元224、226、228儲存稀釋氣體;該複數過濾器230連接該氣體儲存單元222、224、226、228,該複數質流控制器232連接該該複數過濾器230,該複數氣動閥234連接該該複數質流控制器232,該複數逆止閥236連接該該複數氣動閥234,該氣體混合器238連接該複數逆止閥236並與該反應腔室16相連接(如第一D圖)。Please refer to FIG. 3A, which is a block diagram of the gas input device of the present invention. As shown, the gas input device 22 of the present invention includes at least one gas storage unit 222, at least one filter 230, at least one mass flow controller (MFC) 232, at least one pneumatic valve 234, at least one check valve 236 and A gas mixer 238. The embodiment is exemplified by a plurality of gas storage units 222, 224, 226, 228, a plurality of filters 230, a plurality of mass flow controllers 232, a plurality of pneumatic valves 234, and a plurality of check valves 236; and the gas storage units 222, 224 226, 228 in this embodiment is a cylinder, the first gas storage unit 222 stores the reaction gas, and the second, third, and fourth gas storage units 224, 226, 228 store the dilution gas; the plurality of filters 230 are connected to the a gas storage unit 222, 224, 226, 228, the complex mass flow controller 232 is connected to the plurality of filters 230, the plurality of pneumatic valves 234 are connected to the plurality of mass flow controllers 232, and the plurality of check valves 236 are connected to the A plurality of pneumatic valves 234 are coupled to the plurality of check valves 236 and coupled to the reaction chamber 16 (as in the first D-figure).

該氣體混合器238經該複數過濾器230、該複數質流控制器232、該複數氣動閥234與該複數逆止閥236接收該反應氣體及該複數稀釋氣體,且輸送至該反應腔室16(如第一D圖)。本實施例之該氣體混合器238混合其他氣體儲存單元224、226、228所儲存之稀釋氣體,如氮氣、氫氣、氧氣或外界空氣;除可促進反應氣體之分解外,還可稀釋反應氣體並兼作為虛擬負荷(dummy load),以避免微波能量過度集中於柱狀隔離件18(如第一A圖與第一B圖所示),進而延長柱狀隔離件的使用壽命。此外,過濾器230係過濾漂浮氣體中的微小顆粒,質流控制器232連接至一控制模組21,該控制模組21包含一可程式化控制器(PLC)212及一液晶觸控面板214;本發明可藉由該控制模組21控制質流控制器232,而進一步控制輸入至反應 腔室16中的氣體流量。此外,如第三B圖所示,本發明除了利用控制模組21控制質流控制器232,更可利用一電腦裝置27(如桌上型電腦、筆記型電腦)連接至質流控制器232,以藉由電腦裝置27控制質流控制器232,而進一步控制輸入至反應腔室16中的氣體流量。The gas mixer 238 receives the reaction gas and the plurality of dilution gases via the plurality of filters 230, the plurality of mass flow controllers 232, the plurality of pneumatic valves 234, and the plurality of check valves 236, and delivers the reaction gases to the reaction chamber 16 (as in the first D picture). The gas mixer 238 of the embodiment mixes the diluent gas stored in the other gas storage units 224, 226, 228, such as nitrogen, hydrogen, oxygen or outside air; in addition to promoting the decomposition of the reaction gas, the reaction gas may be diluted and Also serving as a dummy load to avoid excessive concentration of microwave energy in the column spacers 18 (as shown in the first A and first B), thereby extending the service life of the column spacers. In addition, the filter 230 filters the fine particles in the floating gas, and the mass flow controller 232 is connected to a control module 21. The control module 21 includes a programmable controller (PLC) 212 and a liquid crystal touch panel 214. The present invention can control the mass flow controller 232 by the control module 21 to further control the input to the reaction. The flow of gas in the chamber 16. In addition, as shown in FIG. 3B, in addition to controlling the mass flow controller 232 by using the control module 21, the present invention can be connected to the mass flow controller 232 by using a computer device 27 (such as a desktop computer or a notebook computer). To control the mass flow controller 232 by the computer device 27, the flow of gas input into the reaction chamber 16 is further controlled.

如第四圖所示,本發明之冷卻循環模組25係包含一冷卻風扇252、一儲水箱254與一抽水幫浦256,其中冷卻風扇252與抽水幫浦256分別連接至微波產生裝置12,且冷卻風扇252與抽水幫浦256更分別連接至儲水箱254,抽水幫浦256自儲水箱254中抽取第二流體至微波產生裝置12,以利用未吸收熱之第二流體將微波產生裝置12中已吸收熱之第二流體推送至冷卻風扇252,藉由該冷卻風扇252對已吸收熱之第二流體進行散熱後,再推送回儲水箱254,如此即形成另一冷卻循環,以冷卻微波產生裝置12。其中第二流體為水、乙二醇水溶液或其他冷卻劑。As shown in the fourth figure, the cooling cycle module 25 of the present invention comprises a cooling fan 252, a water storage tank 254 and a pumping pump 256, wherein the cooling fan 252 and the pumping pump 256 are respectively connected to the microwave generating device 12, And the cooling fan 252 and the pumping pump 256 are respectively connected to the water storage tank 254, and the pumping pump 256 extracts the second fluid from the water storage tank 254 to the microwave generating device 12 to use the second fluid that does not absorb heat to the microwave generating device 12 The second fluid that has absorbed heat is pushed to the cooling fan 252, and the second fluid that has absorbed heat is dissipated by the cooling fan 252, and then pushed back to the storage tank 254, thus forming another cooling cycle to cool the microwave. The device 12 is produced. The second fluid is water, an aqueous glycol solution or other coolant.

如第五圖所示,其為本發明之反應腔室16之另一實施例的結構示意圖,本發明之電漿反應裝置10更可包含至少一擴充件34,其具有一第一銜接端口342與一第二銜接端口344,其中擴充件34之第一銜接端口342係連接該反應腔室16之下端口168,第二銜接端口344係連接下一擴充件36或封隔板166,本實施例係以二擴充件34、36為例,其中第二擴充件36同理亦具有一第一銜接端口362與一第二銜接端口364,第一擴充件34經第一銜接端口342連接反應腔室16,並經第二銜接端口344連接第二擴充件36之第一銜接端口362,且第二擴充件36之第二銜接端口364連接封隔板166,因此本實施例之反應腔室16經由連接二擴充件34、36而增加廢氣滯留時間及處理容量,至於電漿操作功率可相應提高以維持電漿密度。而後續增加擴充件之連接方式,依此類推,如此本發明之反應腔室16可依據使用者的廢氣處理需求而調整反應腔室16的容量,也就是調整擴充件34的數量,以符合使用需求。此外,第一擴充件34具一第一觀測口346與一第二觀測口348,且第二擴充件36亦具有一第一觀測口366與一第二觀測口368,以用於觀測或連接用於檢測電漿之相關儀錶。As shown in FIG. 5 , which is a schematic structural view of another embodiment of the reaction chamber 16 of the present invention, the plasma reactor 10 of the present invention may further include at least one extension member 34 having a first connection port 342 . And a second connection port 344, wherein the first connection port 342 of the expansion member 34 is connected to the lower port 168 of the reaction chamber 16, and the second connection port 344 is connected to the next extension member 36 or the sealing plate 166. For example, the second extension member 36 has a first connection port 362 and a second connection port 364. The first extension member 34 is connected to the reaction chamber via the first connection port 342. The chamber 16 is connected to the first connection port 362 of the second extension member 36 via the second connection port 344, and the second connection port 364 of the second extension member 36 is connected to the sealing plate 166. Therefore, the reaction chamber 16 of the embodiment The exhaust gas residence time and the processing capacity are increased by connecting the two expansion members 34, 36, and the plasma operating power can be increased accordingly to maintain the plasma density. The subsequent increase in the connection mode of the extensions, and so on, so that the reaction chamber 16 of the present invention can adjust the capacity of the reaction chamber 16 according to the user's exhaust gas treatment requirements, that is, adjust the number of the expansion members 34 to meet the use. demand. In addition, the first expansion member 34 has a first observation port 346 and a second observation port 348, and the second extension member 36 also has a first observation port 366 and a second observation port 368 for observation or connection. Instrument for detecting plasma.

綜上所述,本發明係為一種電漿反應裝置,其係利用柱狀隔離件使導 波單元與反應腔室之間隔離,以避免外界氣體流入反應腔室中,而維持反應腔室於低壓狀態下,且因本發明之柱狀隔離件為石英材料所製成,不會反射微波、不易受溫度改變而明顯變形、不易受到微波放電時的燒灼與電漿的腐蝕,可有效延長隔離件的使用壽命。且本發明更進一步設置至少一對耐熱墊圈於柱狀隔離件之內外側,而避免柱狀隔離件之內外側產生縫隙,可確保反應裝置的氣密度並有效維持反應腔室於低壓狀態下。綜合上述,此柱狀隔離件可同時達到絕緣、使微波通過、耐熱、耐蝕且能維持反應腔體低壓之多重效果。In summary, the present invention is a plasma reactor, which utilizes a column spacer to guide The wave unit is isolated from the reaction chamber to prevent outside gas from flowing into the reaction chamber, while maintaining the reaction chamber at a low pressure state, and the columnar spacer of the present invention is made of quartz material and does not reflect microwaves. It is not easy to be deformed by temperature changes, is not susceptible to cauterization during microwave discharge and corrosion of plasma, and can effectively extend the service life of the spacer. Moreover, the present invention further provides at least one pair of heat-resistant gaskets on the inner and outer sides of the columnar spacers, thereby avoiding the occurrence of gaps in the inner and outer sides of the columnar spacers, ensuring the gas density of the reaction device and effectively maintaining the reaction chamber in a low pressure state. In summary, the column spacer can simultaneously achieve the multiple effects of insulation, microwave passage, heat resistance, corrosion resistance and low pressure of the reaction chamber.

故本發明實為一具有新穎性、進步性及可供產業上利用者,應符合我國專利法專利申請要件無疑,爰依法提出發明專利申請,祈 鈞局早日賜至准專利,至感為禱。Therefore, the present invention is a novelty, progressive and available for industrial use. It should be in accordance with the patent application requirements of the Chinese Patent Law. It is undoubtedly the invention patent application, and the Prayer Council will grant the patent as soon as possible. .

惟以上所述者,僅為本發明一較佳實施例而已,並非用來限定本發明實施之範圍,故舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。However, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, so that the shapes, structures, features, and spirits described in the claims of the present invention are equally changed. Modifications are intended to be included in the scope of the patent application of the present invention.

10‧‧‧電漿反應裝置10‧‧‧ Plasma reactor

12‧‧‧微波產生裝置12‧‧‧Microwave generating device

122‧‧‧磁控管122‧‧‧Magnetron

124‧‧‧微波波形監視單元124‧‧‧Microwave waveform monitoring unit

126‧‧‧微波調整單元126‧‧‧Microwave adjustment unit

128‧‧‧電源供應器128‧‧‧Power supply

13‧‧‧圓形導波管13‧‧‧Circular waveguide

132‧‧‧垂直可調式短路迴路132‧‧‧Vertically adjustable short circuit

14‧‧‧方形導波管14‧‧‧Square waveguide

142‧‧‧連接端口142‧‧‧Connection port

144‧‧‧水平可調式短路迴路144‧‧‧Horizontal adjustable short circuit

16‧‧‧反應腔室16‧‧‧Reaction chamber

162‧‧‧上端口162‧‧‧Upper port

164‧‧‧懸置件164‧‧‧suspension

166‧‧‧封隔板166‧‧‧Baffle

168‧‧‧下端口168‧‧‧Lower port

170‧‧‧第一觀測口170‧‧‧First Observatory

172‧‧‧第二觀測口172‧‧‧Second Observatory

174‧‧‧第三觀測口174‧‧‧ Third Observatory

18‧‧‧柱狀隔離件18‧‧‧ Column spacers

182‧‧‧外側耐熱墊圈182‧‧‧Outside heat resistant gasket

184‧‧‧內側耐熱墊圈184‧‧‧Inside heat resistant gasket

20‧‧‧中央天線20‧‧‧Central antenna

202‧‧‧中央天線尖端202‧‧‧Center antenna tip

204‧‧‧循環管路204‧‧‧Circulation line

206‧‧‧循環入口206‧‧‧Circular entry

208‧‧‧循環出口208‧‧‧Circular exit

21‧‧‧控制模組21‧‧‧Control Module

212‧‧‧可程式化控制器212‧‧‧Programmable controller

214‧‧‧液晶觸控面板214‧‧‧LCD touch panel

22‧‧‧氣體輸入裝置22‧‧‧ gas input device

222‧‧‧第一氣體儲存單元222‧‧‧First gas storage unit

224‧‧‧第二氣體儲存單元224‧‧‧Second gas storage unit

226‧‧‧第三氣體儲存單元226‧‧‧ Third gas storage unit

228‧‧‧第四氣體儲存單元228‧‧‧fourth gas storage unit

230‧‧‧過濾器230‧‧‧Filter

232‧‧‧質流控制器232‧‧‧Quality Flow Controller

234‧‧‧氣動閥234‧‧‧Pneumatic valve

236‧‧‧逆止閥236‧‧‧ check valve

238‧‧‧氣體混合器238‧‧‧Gas Mixer

24‧‧‧循環冷凍器24‧‧‧Circular freezer

242‧‧‧第一冷卻水夾套242‧‧‧First cooling water jacket

2422‧‧‧輸入口2422‧‧‧ input port

2424‧‧‧輸出口2424‧‧‧ output port

243‧‧‧第二冷卻水夾套243‧‧‧Second cooling water jacket

2432‧‧‧輸入口2432‧‧‧ input port

2434‧‧‧輸出口2434‧‧‧Outlet

244‧‧‧第三冷卻水夾套244‧‧‧ Third cooling water jacket

2442‧‧‧輸入口2442‧‧‧ input port

2444‧‧‧輸出口2444‧‧‧Outlet

25‧‧‧冷卻循環模組25‧‧‧Cooling cycle module

252‧‧‧冷卻風扇252‧‧‧Cooling fan

254‧‧‧儲水箱254‧‧‧Water tank

256‧‧‧抽水幫浦256‧‧‧ pumping pump

26‧‧‧取樣分析單元26‧‧‧Sampling and analysis unit

27‧‧‧電腦裝置27‧‧‧Computer equipment

28‧‧‧尾氣中和單元28‧‧‧Exhaust gas neutralization unit

30‧‧‧壓力量測單元30‧‧‧Pressure measuring unit

32‧‧‧氣壓幫浦32‧‧‧Pneumatic pump

33‧‧‧取樣幫浦33‧‧‧Sampling pump

34‧‧‧擴充件34‧‧‧Extensions

342‧‧‧第一銜接端口342‧‧‧First connection port

344‧‧‧第二銜接端口344‧‧‧Second port

346‧‧‧第一觀測口346‧‧‧First Observatory

348‧‧‧第二觀測口348‧‧‧Second Observatory

36‧‧‧擴充件36‧‧‧Extensions

362‧‧‧第一銜接端口362‧‧‧First connection port

364‧‧‧第二銜接端口364‧‧‧Second port

366‧‧‧第一觀測口366‧‧‧First Observatory

368‧‧‧第二觀測口368‧‧‧Second Observatory

第一A圖為本發明之電漿反應裝置之一實施例的結構示意圖;第一B圖為本發明之電漿反應裝置之一實施例的結構示意圖;第一C圖為本發明之柱狀隔離件之一實施例的結構示意圖;第一D圖為本發明之電漿反應裝置之一實施例的結構示意圖;第二圖為本發明之微波產生裝置的一較佳實施例的方塊圖;第三A圖為本發明之氣體輸入裝置的一較佳實施例的方塊圖;第三B圖為本發明之氣體輸入裝置的另一較佳實施例的方塊圖;第四圖為本發明之冷卻模組的一較佳實施例的方塊圖;以及第五圖為本發明之電漿反應裝置之另一實施例的結構示意圖。1A is a schematic structural view of an embodiment of a plasma reactor of the present invention; FIG. 1B is a schematic structural view of an embodiment of a plasma reactor of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic structural view of an embodiment of a plasma reactor of the present invention; and FIG. 2 is a block diagram of a preferred embodiment of the microwave generating apparatus of the present invention; 3 is a block diagram of a preferred embodiment of a gas input device of the present invention; FIG. 3B is a block diagram of another preferred embodiment of the gas input device of the present invention; A block diagram of a preferred embodiment of the cooling module; and a fifth diagram is a schematic structural view of another embodiment of the plasma reactor of the present invention.

10‧‧‧電漿反應裝置10‧‧‧ Plasma reactor

13‧‧‧圓形導波管13‧‧‧Circular waveguide

132‧‧‧垂直可調式短路迴路132‧‧‧Vertically adjustable short circuit

14‧‧‧方形導波管14‧‧‧Square waveguide

142‧‧‧連接端口142‧‧‧Connection port

144‧‧‧水平可調式短路迴路144‧‧‧Horizontal adjustable short circuit

16‧‧‧反應腔室16‧‧‧Reaction chamber

162‧‧‧上端口162‧‧‧Upper port

164‧‧‧懸置件164‧‧‧suspension

166‧‧‧封隔板166‧‧‧Baffle

168‧‧‧下端口168‧‧‧Lower port

172‧‧‧第二觀測口172‧‧‧Second Observatory

174‧‧‧第三觀測口174‧‧‧ Third Observatory

18‧‧‧柱狀隔離件18‧‧‧ Column spacers

20‧‧‧中央天線20‧‧‧Central antenna

202‧‧‧循環管路202‧‧‧Circulation pipeline

204‧‧‧循環管路204‧‧‧Circulation line

206‧‧‧循環入口206‧‧‧Circular entry

208‧‧‧循環出口208‧‧‧Circular exit

Claims (35)

一種電漿反應裝置,其包含:一微波產生裝置,產生一微波;一導波單元,其連接該微波產生裝置,該導波單元具一連接端口;至少一反應腔室,其具一上端口,該上端口接設該連接端口,該反應腔室接收至少一反應氣體;一柱狀隔離件,其設置於該連接端口與該上端口之間;一中央天線,其穿設該導波單元、該柱狀隔離件與該反應腔室,該導波單元接收該微波,並導引至該中央天線,該中央天線導引該微波穿過該柱狀隔離件而導引至該反應腔室,該微波驅使該反應氣體於該反應腔室形成一電漿;一懸置件,其懸置於該反應腔室內,容置至少一參與電漿反應之物件;以及一氣體輸入裝置,其連接該反應腔室,輸入該反應氣體與複數稀釋氣體至該反應腔室,該氣體輸入裝置包含:複數氣體儲存單元,其儲存該反應氣體與該些稀釋氣體;複數過濾器,其連接該些氣體儲存單元,過濾該反應氣體與該些稀釋氣體之複數懸浮粒子;複數質流控制器,其連接該些過濾器,控制該反應氣體與該些稀釋氣體之流量;複數氣動閥,其連接該些質流控制器,控制該反應氣體與該些稀釋氣體進入反應腔室與否;複數逆止閥,其連接該些氣動閥,避免因鋼瓶間壓力差導致不相容氣體流至特定鋼瓶而產生危險;以及一氣體混合器,其連接於該些逆止閥與該反應腔室,該氣體混合器經該些過濾器、該些控制閥、該些質流控制器與該些逆止閥接收該些反應氣體,並混合該反應氣體與該些稀釋氣體,且輸送至該反應腔室。 A plasma reaction device comprising: a microwave generating device for generating a microwave; a waveguide unit connected to the microwave generating device, the waveguide unit having a connection port; at least one reaction chamber having an upper port The upper port is connected to the connection port, the reaction chamber receives at least one reactive gas; a column spacer is disposed between the connection port and the upper port; and a central antenna is disposed through the waveguide unit The column spacer and the reaction chamber, the waveguide unit receives the microwave and is guided to the central antenna, and the central antenna guides the microwave through the column spacer to be guided to the reaction chamber The microwave drives the reaction gas to form a plasma in the reaction chamber; a suspension member suspended in the reaction chamber to accommodate at least one object participating in the plasma reaction; and a gas input device connected a reaction chamber, the reaction gas and a plurality of dilution gases are input to the reaction chamber, the gas input device comprises: a plurality of gas storage units for storing the reaction gas and the diluent gases; and a plurality of filters, Connecting the gas storage units to filter a plurality of suspended particles of the reaction gas and the diluent gases; a plurality of mass flow controllers connected to the filters to control a flow rate of the reaction gases and the diluent gases; a plurality of pneumatic valves, Connecting the mass flow controllers to control whether the reaction gases and the diluent gases enter the reaction chamber; and a plurality of check valves connecting the pneumatic valves to prevent incompatible gas from flowing due to a pressure difference between the cylinders a specific cylinder is dangerous; and a gas mixer connected to the check valve and the reaction chamber, the gas mixer passing through the filters, the control valves, the mass flow controllers and the The check valve receives the reaction gases, and mixes the reaction gases with the diluent gases and delivers them to the reaction chamber. 如申請專利範圍第1項所述之電漿反應裝置,其中該反應氣體包含二氧 化碳、甲烷、六氟化硫、氧化亞氮、全氟化物、揮發性有機物或其他半導體製程殘餘氣體。 The plasma reactor of claim 1, wherein the reaction gas comprises dioxane Carbon, methane, sulfur hexafluoride, nitrous oxide, perfluorinated, volatile organic compounds or other semiconductor process residual gases. 如申請專利範圍第1項所述之電漿反應裝置,其中該稀釋氣體為氮氣、氫氣、氧氣或空氣。 The plasma reactor of claim 1, wherein the diluent gas is nitrogen, hydrogen, oxygen or air. 如申請專利範圍第1項所述之電漿反應裝置,其中該些質流控制器連接至一控制模組。 The plasma reactor of claim 1, wherein the mass flow controllers are coupled to a control module. 如申請專利範圍第4項所述之電漿反應裝置,其中該控制模組包含一可程式化控制器(PLC)及一觸控螢幕。 The plasma reaction device of claim 4, wherein the control module comprises a programmable controller (PLC) and a touch screen. 如申請專利範圍第1項所述之電漿反應裝置,其中該些質流控制器連接至一電腦裝置。 The plasma reactor of claim 1, wherein the mass flow controllers are connected to a computer device. 如申請專利範圍第6項所述之電漿反應裝置,其中該電腦裝置為一桌上型電腦或一筆記型電腦。 The plasma reactor of claim 6, wherein the computer device is a desktop computer or a notebook computer. 如申請專利範圍第1項所述之電漿反應裝置,其中該些氣體儲存單元為鋼瓶。 The plasma reactor of claim 1, wherein the gas storage units are cylinders. 如申請專利範圍第1項所述之電漿反應裝置,更包含:至少一氣壓幫浦,其連接該反應腔室,抽取該電漿所產生之一尾氣並產生一負壓至該反應腔室;一壓力量測單元,其連接該反應腔室,量測該反應腔室之一壓力,該氣體輸入裝置依據該壓力量測值調整進氣流量,以控制該反應腔室之該壓力;以及一尾氣中和裝置,其連接該氣壓幫浦,接收該反應腔室排放之尾氣並中和該尾氣。 The plasma reaction device of claim 1, further comprising: at least one gas pressure pump connected to the reaction chamber, extracting one of the exhaust gas generated by the plasma and generating a negative pressure to the reaction chamber a pressure measuring unit connected to the reaction chamber to measure a pressure of the reaction chamber, the gas input device adjusting the intake air flow rate according to the pressure measurement value to control the pressure of the reaction chamber; An off-gas neutralization device is coupled to the gas pressure pump to receive the exhaust gas from the reaction chamber and neutralize the exhaust gas. 如申請專利範圍第9項所述之電漿反應裝置,其中該氣壓幫浦為一溼式抽氣泵或一乾式抽氣泵。 The plasma reactor of claim 9, wherein the pneumatic pump is a wet pump or a dry pump. 如申請專利範圍第1項所述之電漿反應裝置,更包含:一取樣幫浦,其連接該反應腔室,輸送該反應腔室之該電漿所產生之氣體送至一取樣分析單元;以及該取樣分析單元,其連接該取樣幫浦,取樣該電漿反應後之產物並分析。 一偵測儀錶,其連接該反應腔室,用於檢測該電漿之特性。 The plasma reaction device of claim 1, further comprising: a sampling pump connected to the reaction chamber, and the gas generated by the plasma transporting the reaction chamber is sent to a sampling and analyzing unit; And the sampling analysis unit is connected to the sampling pump, samples the product after the plasma reaction and analyzes. A detection instrument is coupled to the reaction chamber for detecting characteristics of the plasma. 如申請專利範圍第11項所述之電漿反應裝置,其中該取樣幫浦為一乾式抽氣泵。 The plasma reactor of claim 11, wherein the sampling pump is a dry pump. 如申請專利範圍第11項所述之電漿反應裝置,其中該取樣分析單元為一氣相層析儀(GC)。 The plasma reactor of claim 11, wherein the sample analysis unit is a gas chromatograph (GC). 如申請專利範圍第11項所述之電漿反應裝置,其中該取樣分析單元為一傅立葉轉換紅外光譜儀(FTIR)。 The plasma reaction apparatus of claim 11, wherein the sampling analysis unit is a Fourier Transform Infrared Spectrometer (FTIR). 如申請專利範圍第11項所述之電漿反應裝置,其中該偵測儀錶為一光放射光譜儀(OES)。 The plasma reaction device of claim 11, wherein the detection instrument is an optical emission spectrometer (OES). 如申請專利範圍第11項所述之電漿反應裝置,其中該偵測儀錶為一熱電偶或壓力計。 The plasma reactor of claim 11, wherein the detecting instrument is a thermocouple or a pressure gauge. 如申請專利範圍第1項所述之電漿反應裝置,其中該反應腔室更設置至少一觀測口,其連接該偵測儀錶。 The plasma reactor of claim 1, wherein the reaction chamber is further provided with at least one observation port connected to the detecting instrument. 如申請專利範圍第1項所述之電漿反應裝置,更包含:一冷卻裝置,其接設於該反應腔室外側之至少一冷卻水夾套、該中央天線與該微波產生裝置,冷卻該反應腔室、該中央天線與該微波產生裝置。 The plasma reaction device of claim 1, further comprising: a cooling device connected to at least one cooling water jacket outside the reaction chamber, the central antenna and the microwave generating device, cooling the a reaction chamber, the central antenna, and the microwave generating device. 如申請專利範圍第18項所述之電漿反應裝置,其中該中央天線具有一循環管路,其連接該冷卻裝置。 The plasma reactor of claim 18, wherein the central antenna has a circulation line connected to the cooling device. 如申請專利範圍第18項所述之電漿反應裝置,該冷卻裝置包含:一循環冷凍器,其連接該冷卻水夾套與該中央天線,該循環冷凍器輸送一第一流體通過該中央天線與該冷卻水夾套,並冷卻該冷卻水夾套與該中央天線;一冷卻循環模組,其包括一循環抽水幫浦、一儲水箱與一冷卻風扇,該冷卻風扇與該循環抽水幫浦分別連接該微波產生裝置與該儲水箱,該循環抽水幫浦抽取該儲水箱之一第二流體並輸送至該微波產生裝置,以利用未吸收熱之該第二流體將該微波產生裝置中已吸收熱之第二流體推送至冷卻風扇252,藉由該冷卻風扇對已吸收熱之該第二流 體進行散熱後,而經該冷卻風扇流入該儲水箱,以冷卻該微波產生裝置。 The plasma reactor of claim 18, wherein the cooling device comprises: a circulation chiller connecting the cooling water jacket and the central antenna, the circulation chiller conveying a first fluid through the central antenna Jacking the cooling water and cooling the cooling water jacket and the central antenna; a cooling cycle module comprising a circulating pumping pump, a water storage tank and a cooling fan, the cooling fan and the circulating pump Connecting the microwave generating device and the water storage tank respectively, the circulating pumping pump extracts a second fluid of the water storage tank and sends the second fluid to the microwave generating device to utilize the second fluid that does not absorb heat The second fluid that absorbs heat is pushed to the cooling fan 252, and the second stream that has absorbed heat by the cooling fan pair After the body is dissipated, the cooling fan flows into the water storage tank to cool the microwave generating device. 如申請專利範圍第20項所述之電漿反應裝置,其中該第一流體為水、乙二醇水溶液、液態氨或其他冷煤。 The plasma reactor of claim 20, wherein the first fluid is water, aqueous glycol solution, liquid ammonia or other cold coal. 如申請專利範圍第20項所述之電漿反應裝置,其中該第二流體為水、乙二醇水溶液或其他冷卻劑。 The plasma reactor of claim 20, wherein the second fluid is water, an aqueous glycol solution or other coolant. 如申請專利範圍第1項所述之電漿反應裝置,其中該柱狀隔離件之材料為石英。 The plasma reactor of claim 1, wherein the column spacer is made of quartz. 如申請專利範圍第1項所述之電漿反應裝置,其中該微波產生裝置包含:一磁控管,其產生該微波;一隔離器,其接設該磁控管,阻擋該微波由該導波單元反射至該磁控管;一微波波形監視單元,其連接該磁控管,監視該微波之波形;以及一微波調整單元,其連接該隔離器與該導波單元,該微波調整單元依據電場、磁場與電阻抗校正該微波。 The plasma reaction device of claim 1, wherein the microwave generating device comprises: a magnetron that generates the microwave; and an isolator that is connected to the magnetron to block the microwave from the guide The wave unit is reflected to the magnetron; a microwave waveform monitoring unit is connected to the magnetron to monitor the waveform of the microwave; and a microwave adjusting unit is connected to the isolator and the waveguide unit, and the microwave adjusting unit is based The electric field, magnetic field and electrical impedance are corrected for the microwave. 如申請專利範圍第1項所述之電漿反應裝置,其中該物件為至少一用於電漿反應之催化劑。 The plasma reactor of claim 1, wherein the article is at least one catalyst for a plasma reaction. 如申請專利範圍第1項所述之電漿反應裝置,其中該物件為至少一接受電漿表面處理之待處理物件。 The plasma reaction apparatus of claim 1, wherein the object is at least one object to be treated which is subjected to plasma surface treatment. 如申請專利範圍第1項所述之電漿反應裝置,其中該懸置件之材質為石英。 The plasma reactor of claim 1, wherein the suspension is made of quartz. 如申請專利範圍第1項所述之電漿反應裝置,更包含:至少一擴充件,其連接該反應腔室。 The plasma reactor of claim 1, further comprising: at least one expansion member connected to the reaction chamber. 如申請專利範圍第1項所述之電漿反應裝置,其中該反應腔室之材料為不鏽鋼。 The plasma reactor of claim 1, wherein the material of the reaction chamber is stainless steel. 如申請專利範圍第1項所述之電漿反應裝置,其中該中央天線之尖端之材料為不鏽鋼、釷鎢或鑭鎢。 The plasma reactor of claim 1, wherein the material of the tip of the central antenna is stainless steel, tantalum tungsten or tantalum tungsten. 如申請專利範圍第1項所述之電漿反應裝置,其中該中央天線之尖端之外形為一子彈形、一星形、一樹枝狀、一圓柱狀或一圓錐狀。 The plasma reactor of claim 1, wherein the tip of the central antenna is shaped like a bullet, a star, a dendrites, a cylinder or a cone. 如申請專利範圍第1項所述之電漿反應裝置,其中該導波單元包含至少一可調式短路迴路,該可調式短路迴路控制該微波之相位與電抗性負載。 The plasma reactor of claim 1, wherein the waveguide unit comprises at least one adjustable short circuit that controls the phase of the microwave and the reactive load. 如申請專利範圍第1項所述之電漿反應裝置,更包含:至少一內耐熱墊圈,其設置於該柱狀隔離件之內側,該中央天線穿設該內耐熱墊圈;以及至少一外耐熱墊圈,其設置於該柱狀隔離件之外側,該外耐熱墊圈抵住該連接端口與該上端口之間的內壁。 The plasma reaction device of claim 1, further comprising: at least one inner heat-resistant gasket disposed on the inner side of the columnar spacer, the central antenna penetrating the inner heat-resistant gasket; and at least one external heat-resistant gasket a gasket disposed on an outer side of the column spacer, the outer heat resistant gasket abutting an inner wall between the connection port and the upper port. 如申請專利範圍第1項所述之電漿反應裝置,其中該導波單元包含一方形導波管與一圓形導波管,該方形導波管設有一水平短路迴路,該圓形導波管設有一垂直短路迴路,該方形導波管接收該微波,並藉由該水平短路迴路與該垂直短路迴路控制轉向,而導引該微波至該圓形導波管,該圓形導波管導引該微波至該中央天線。 The plasma reaction device of claim 1, wherein the waveguide unit comprises a square waveguide and a circular waveguide, the square waveguide is provided with a horizontal short circuit, the circular waveguide The tube is provided with a vertical short circuit, the square waveguide receives the microwave, and controls the steering by the horizontal short circuit and the vertical short circuit to guide the microwave to the circular waveguide, the circular waveguide The microwave is directed to the central antenna. 如申請專利範圍第1項所述之電漿反應裝置,其中該反應腔室之壓力值可為0.001至150托爾(torr)。 The plasma reactor of claim 1, wherein the reaction chamber has a pressure value of 0.001 to 150 torr.
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