TWI452651B - - Google Patents

Info

Publication number
TWI452651B
TWI452651B TW101107836A TW101107836A TWI452651B TW I452651 B TWI452651 B TW I452651B TW 101107836 A TW101107836 A TW 101107836A TW 101107836 A TW101107836 A TW 101107836A TW I452651 B TWI452651 B TW I452651B
Authority
TW
Taiwan
Application number
TW101107836A
Other languages
Chinese (zh)
Other versions
TW201338092A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW101107836A priority Critical patent/TW201338092A/zh
Publication of TW201338092A publication Critical patent/TW201338092A/zh
Application granted granted Critical
Publication of TWI452651B publication Critical patent/TWI452651B/zh

Links

TW101107836A 2012-03-08 2012-03-08 半導體之氣隙的形成方法 TW201338092A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW101107836A TW201338092A (zh) 2012-03-08 2012-03-08 半導體之氣隙的形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101107836A TW201338092A (zh) 2012-03-08 2012-03-08 半導體之氣隙的形成方法

Publications (2)

Publication Number Publication Date
TW201338092A TW201338092A (zh) 2013-09-16
TWI452651B true TWI452651B (cg-RX-API-DMAC7.html) 2014-09-11

Family

ID=49628005

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101107836A TW201338092A (zh) 2012-03-08 2012-03-08 半導體之氣隙的形成方法

Country Status (1)

Country Link
TW (1) TW201338092A (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9653348B1 (en) 2015-12-30 2017-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101587857A (zh) * 2008-05-23 2009-11-25 中芯国际集成电路制造(北京)有限公司 半导体器件互连结构的盖层及其制作方法
TW201002089A (en) * 2008-05-02 2010-01-01 Canon Kk Method of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducer
TW201027704A (en) * 2009-01-13 2010-07-16 Taiwan Semiconductor Mfg Through-silicon via with low-k dielectric liner

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201002089A (en) * 2008-05-02 2010-01-01 Canon Kk Method of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducer
CN101587857A (zh) * 2008-05-23 2009-11-25 中芯国际集成电路制造(北京)有限公司 半导体器件互连结构的盖层及其制作方法
TW201027704A (en) * 2009-01-13 2010-07-16 Taiwan Semiconductor Mfg Through-silicon via with low-k dielectric liner

Also Published As

Publication number Publication date
TW201338092A (zh) 2013-09-16

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