TWI451556B - 發光二極體封裝模組 - Google Patents

發光二極體封裝模組 Download PDF

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TWI451556B
TWI451556B TW100140272A TW100140272A TWI451556B TW I451556 B TWI451556 B TW I451556B TW 100140272 A TW100140272 A TW 100140272A TW 100140272 A TW100140272 A TW 100140272A TW I451556 B TWI451556 B TW I451556B
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metal
circuit board
package module
metal plate
carriers
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TW100140272A
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TW201320300A (zh
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彭國峯
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恆日光電股份有限公司
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Priority to TW100140272A priority Critical patent/TWI451556B/zh
Priority to CN2012104333673A priority patent/CN103094466A/zh
Priority to US13/668,007 priority patent/US20130113369A1/en
Publication of TW201320300A publication Critical patent/TW201320300A/zh
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203Cooling of mounted components
    • H05K1/0204Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00Reflectors for light sources
    • F21V7/22Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F21V7/24Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00Reflectors for light sources
    • F21V7/22Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F21V7/28Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00Reflectors for light sources
    • F21V7/04Optical design
    • F21V7/05Optical design plane
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00Planar light sources
    • F21Y2105/10Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09009Substrate related
    • H05K2201/09054Raised area or protrusion of metal substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10106Light emitting diode [LED]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0058Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Description

發光二極體封裝模組
本發明係有關於一種發光二極體封裝技術,特別是一種利用晶片直接封裝(chip on board,COB)技術之發光二極體封裝模組。
發光二極體(light-emitting diodes,LED)因具有壽命長、省電、耐用等特點,故LED照明裝置為綠能環保的趨勢,未來將可廣泛應用。一般高亮度LED燈具多是將發光模組,通常包含數個LED燈泡,直接焊接在一般電路板或鋁基板上。為了增加散熱效果,會額外設計散熱構件,如於基板下方設置散熱鰭片。然而,除了散熱性問題外,LED燈具多為直向性發光,無法達到如一般現有燈泡可270度發光的效果,因此,如何解決散熱與直向性發光的問題為此技術領域之重要課題。
為了解決上述問題,本發明目的之一係提供一種發光二極體封裝模組,其金屬板係整個覆蓋電路板之下表面直接向下散熱。
為了達到上述目的,本發明一實施例之一種發光二極體封裝模組,係包括:一金屬板,係具有多個金屬承載座突出於金屬板之上表面;一電路板,係直接疊置於整個金屬板之上表面,其中電路板具有多個開口對應金屬承載座設置用以讓金屬承載座貫穿;金屬承載座之上表面係同水平或凸出於電路板上表面;以及多個晶片,係分別設置至少一個晶片於金屬承載座上;多條導線,係電性連接多個晶片與電路板;以及一封裝材料,係分別覆蓋每一晶片、每一金屬承載座、多條導線、與部分電路板。
以下藉由具體實施例配合所附的圖式詳加說明,當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。
其詳細說明如下,所述較佳實施例僅做一說明非用以限定本發明。圖1A、圖1B與圖1C為本發明一實施例之發光二極體封裝模組的示意圖。
於本實施例中,如圖1A所示,發光二極體封裝模組包括一金屬板10。金屬板10具有多個金屬承載座12突出於金屬板10之上表面。一電路板20直接疊置於整個金屬板10之上表面。其中,如圖1C中電路板與金屬板之俯視圖所示,電路板20具有多個開口22對應金屬承載座12設置用以讓金屬承載座12貫穿。於本實施例中,金屬承載座12之上表面係與電路板20上表面同水平。如圖1B所示,金屬承載座12上分別設置至少一個晶片30於其上。多條導線40分別電性連接多個晶片30與電路板20。一封裝材料50分別覆蓋每一晶片30、多條導線40、與部分電路板20。
熟知該項技術者應能了解,上述實施例中金屬承載座12之上表面係與電路板20上表面同水平,然而實際於金屬板10與電路板20疊置製作的過程中金屬承載座12之上表面有可能是略為微凹,但是晶片30設置於其上完全不會影響其出光區域。
接著,請參照圖1B與圖1C,於本實施例中,電路板20之開口22與金屬承載座12係分佈於電路板20中間區域。熟知該項技術領域的人應可了解,金屬承載座12或晶片30設置位置或密度可依照不同光源需求進行設計。
接續上述說明,如圖2所示,於一實施中,金屬承載座12可貫穿電路板20之開口22(如圖1C所標示)。其中,金屬承載座12之上表面係凸出電路板20之上表面。因此,在晶片30前方並無任何遮蔽 且具有良好的出光角度。
於一實施例中,金屬板10與電路板20之尺寸相同並上下疊置,如圖1B或圖2。故,無論是晶片30或是電路板20內線路所產生熱量,金屬板10都能提供良好的散熱結果。
於上述實施例中,電路板20之開口22與金屬承載座12之尺寸相當,用以讓金屬承載座12貫穿固定。
請參照圖3A與圖3B,於一實施例中,金屬承載座12設置於金屬板10之周緣。於本實施例中,電路板20之開口22係設置於電路板20之周緣且開口22為開放性,因此部分金屬承載座12之側面會暴露於電路板20之周緣。如此,晶片40在電路板20之周緣可具有較大的出光角度。
於上述實施例中,金屬承載座12之上表面係與電路板20上表面同水平。請接續上述說明,如圖4所示,於一實施例中,金屬承載座12設置於電路板20之周緣並暴露出部分金屬承載座12之側面。此外,於本實施例中金屬承載座12係凸出電路板20之上表面。也就是說,可將金屬承載座12之頂面高於電路20其他區域之上表面。如此,晶片30設置於整個發光二極體封裝模組邊緣,可增加側向出光區域外,藉由金屬承載座12的設計將晶片30之高度提高,可進一步增加晶片30光路A之出光角度,如圖5所示。故,本實施例可有效改善以往發光二極體只有直向性發光,無法達到一般燈泡可270度發光的缺點。
可理解的是,於本發明中,晶片的設置需要黏著固定於金屬承載座,金屬板與電路板間隙係電性隔絕的,所使用的材料技術為一般技術者所熟知的,於此不再進一步說明。
於一實施例中,請參照圖5,可於金屬板10之整個上表面設置一高反射層12。此高反射層12之材質可為金屬銀或其他高反射率物質。金屬銀可提供相當優良的反射效果並可利用電鍍的方式設置於金 屬板10上。
如圖5所示,電路板20上之打線區域可設置有一鍍金層24作為導40線的焊墊。鍍金的焊墊不易氧化故可避免因氧化導致打線不黏固的問題,可有效提高封裝製程的良率。更進一步,電路板20上之打線區域可設置於金屬承載座12之下方,因此,此鍍金的焊墊係位於晶片30出光面之下方,可以避免鍍金層24吸光降低出光效率的問題。
根據上述說明,本發明發光二極體封裝模組之並無任何壩狀(Dam)或凹杯結構,晶片出光後並不靠折射後再出光,故無光折射後之光耗損降低出光效率的問題。
綜合上述,本發明藉由將電路板整個覆蓋金屬板直接向下散熱,其金屬板上之金屬承載座由電路板上之開口貫穿係平行或凸出電路板上表面。本發明之結構的構件簡單故可簡化製程與使用材料,因此可大幅降低製造與材料的成本。本發明之實施例可克服以往發光二極體只有直向性發光,無法達到一般燈泡可270度發光的缺點。
以上所述之實施例僅係為說明本發明之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施,當不能以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵蓋在本發明之專利範圍內。
10‧‧‧金屬板
12‧‧‧金屬承載座
14‧‧‧高反射層
20‧‧‧電路板
22‧‧‧開口
24‧‧‧鍍金層
30‧‧‧晶片
40‧‧‧導線
50‧‧‧封裝材料
A‧‧‧光路
圖1A、圖1B與圖1C為本發明一實施例之示意圖。
圖2為本發明一實施例之示意圖。
圖3A與圖3B為本發明一實施例之示意圖。
圖4為本發明一實施例之示意圖。
圖5為本發明一實施例之局部放大示意圖。
10‧‧‧金屬板
12‧‧‧金屬承載座
20‧‧‧電路板
30‧‧‧晶片
40‧‧‧導線
50‧‧‧封裝材料

Claims (7)

  1. 一種發光二極體封裝模組,係包含:一金屬板,係具有多個金屬承載座突出於該金屬板之上表面;一電路板,係直接疊置於整個該金屬板之上表面,其中該電路板具有多個開口對應該些金屬承載座設置用以讓該些金屬承載座貫穿,其中該電路板之該些開口與該些金屬承載座之尺寸相當,使得每一該開口的內壁分別與每一該金屬承載座的側壁貼合且該些金屬承載座之上表面係同水平或凸出於該電路板上表面;多個晶片,係分別設置該多個晶片的至少一個於該金屬承載座上;多條導線,係電性連接該多個晶片與該電路板;以及一封裝材料,係分別覆蓋每一該多個晶片、每一該多個金屬承載座、該多條導線、與部分該電路板。
  2. 如請求項1所述之發光二極體封裝模組,其中該金屬板與該電路板之尺寸相同。
  3. 如請求項1所述之發光二極體封裝模組,其中該金屬承載座之上表面係具有一高反射層,其材質為金屬銀或高反射率物質。
  4. 如請求項1所述之發光二極體封裝模組,其中該多個金屬承載座係設置於該金屬板之周緣。
  5. 如請求項4所述之發光二極體封裝模組,其中該多個金屬承載之頂面係高於該金屬板其他區域之上表面。
  6. 如請求項1所述之發光二極體封裝模組,其中該多個金屬承載之頂面係高於該金屬板其他區域之上表面。
  7. 如請求項1所述之發光二極體封裝模組,其中該電路板設置一鍍金層供該多個導線焊接。
TW100140272A 2011-11-04 2011-11-04 發光二極體封裝模組 TWI451556B (zh)

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Application Number Priority Date Filing Date Title
TW100140272A TWI451556B (zh) 2011-11-04 2011-11-04 發光二極體封裝模組
CN2012104333673A CN103094466A (zh) 2011-11-04 2012-11-02 发光二极管封装模块
US13/668,007 US20130113369A1 (en) 2011-11-04 2012-11-02 Led package module

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