TWI447839B - Substrate processing apparatus and method of manufacturing semiconductor device - Google Patents

Substrate processing apparatus and method of manufacturing semiconductor device Download PDF

Info

Publication number
TWI447839B
TWI447839B TW100100797A TW100100797A TWI447839B TW I447839 B TWI447839 B TW I447839B TW 100100797 A TW100100797 A TW 100100797A TW 100100797 A TW100100797 A TW 100100797A TW I447839 B TWI447839 B TW I447839B
Authority
TW
Taiwan
Prior art keywords
motor
wafer
torque
cover
processing
Prior art date
Application number
TW100100797A
Other languages
Chinese (zh)
Other versions
TW201140736A (en
Inventor
Yukinori Aburatani
Masakazu Shimada
Osamu Morita
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2010003644A external-priority patent/JP2011146412A/en
Priority claimed from JP2010227766A external-priority patent/JP5711930B2/en
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW201140736A publication Critical patent/TW201140736A/en
Application granted granted Critical
Publication of TWI447839B publication Critical patent/TWI447839B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/6773Conveying cassettes, containers or carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781Batch transfer of wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00Material or article handling
    • Y10S414/135Associated with semiconductor wafer handling
    • Y10S414/137Associated with semiconductor wafer handling including means for charging or discharging wafer cassette

Description

基板處理裝置及半導體裝置之製造方法Substrate processing apparatus and method of manufacturing semiconductor apparatus

本發明係關於一種基板處理裝置及半導體裝置之製造方法。The present invention relates to a substrate processing apparatus and a method of manufacturing the semiconductor apparatus.

實施半導體裝置之製造製程或顯示裝置之製造製程之一製程的習知基板處理裝置,係具備有:對基板進行處理的處理管、載置基板的晶舟、開閉設在處理管下端之爐口的蓋、使晶舟與蓋一起升降以將晶舟搬入至處理管內,並且將蓋推壓於爐口的升降機構、驅動升降機構的馬達、以及密封蓋與處理管之下端之間的密封構件。A conventional substrate processing apparatus that performs a manufacturing process of a semiconductor device or a manufacturing process of a display device includes a processing tube that processes a substrate, a wafer boat on which the substrate is placed, and a furnace opening that is opened and closed at a lower end of the processing tube Cover, lifting the boat together with the lid to carry the boat into the processing tube, and pushing the lid against the lifting mechanism of the furnace mouth, the motor driving the lifting mechanism, and the seal between the sealing cover and the lower end of the processing tube member.

對基板進行處理之後,使蓋下降以從處理管內搬出晶舟。此時,在密封構件貼附在處理管之下端面的狀態下,蓋開始下降。其結果,在密封構件從處理管下端之接觸面逐漸剝離的過程中蓋會撓曲,在欲恢復該撓曲時蓋會振動,該振動會傳達至載置於蓋的晶舟。因此,載置於晶舟之基板會跳起或從晶舟落下等而損傷。After the substrate is processed, the lid is lowered to carry the wafer boat out of the processing tube. At this time, in a state where the sealing member is attached to the lower end surface of the processing tube, the cover starts to descend. As a result, the cover is deflected during the process in which the sealing member is gradually peeled off from the contact surface of the lower end of the processing tube, and the cover vibrates when the deflection is to be restored, and the vibration is transmitted to the boat placed on the cover. Therefore, the substrate placed on the wafer boat may be damaged by falling or falling from the boat.

因此,本發明係以提供一種基板處理裝置及半導體裝置之製造方法為目的,它們可抑制在從處理管內搬出晶舟之初期階段所產生之蓋的振動。Accordingly, the present invention has an object of providing a substrate processing apparatus and a method of manufacturing a semiconductor device which can suppress vibration of a cover which is generated in an initial stage of carrying out a wafer boat from a processing tube.

根據本發明之一形態,係提供一種基板處理裝置,具有:晶舟,係載置基板;處理管,係收納該晶舟;蓋,係載置該晶舟且開閉設在該處理管之下端的爐口;升降機構,係使該蓋升降;馬達,係驅動該升降機構;密封構件,係密封該處理管之下端面與該蓋之間;以及控制部,係在從該處理管之下端面或該蓋之表面拉開該密封構件時所產生之該蓋之變形的恢復期,以使該基板停留在該晶舟內之載置位置的方式,控制該馬達之轉矩。According to an aspect of the present invention, a substrate processing apparatus includes: a wafer boat on which a substrate is placed; a processing tube that accommodates the wafer boat; and a cover that mounts the wafer boat and is opened and closed at a lower end of the processing tube a furnace opening; a lifting mechanism for lifting the cover; a motor driving the lifting mechanism; a sealing member sealing the lower end surface of the processing tube and the cover; and a control portion being disposed under the processing tube The recovery period of the deformation of the cover generated when the end surface or the surface of the cover is opened by the sealing member controls the torque of the motor in such a manner that the substrate stays at the mounting position in the boat.

根據本發明之另一形態,係提供一種半導體裝置之製造方法,係在處理管內對載置於晶舟之基板進行處理之後,使透過密封構件密封該處理管之爐口的蓋下降以打開該爐口,並且從該爐口搬出該處理管內之該晶舟,在從該處理管之下端面或該蓋之表面拉開該密封構件時所產生之該蓋之變形的恢復期,以使該基板停留在該晶舟內之載置位置的方式,控制用以驅動使該蓋下降之升降機構之馬達的轉矩。According to another aspect of the present invention, a method of fabricating a semiconductor device is provided, wherein after processing a substrate placed on a wafer boat in a processing tube, a cover that seals the furnace opening of the processing tube through the sealing member is lowered to open The furnace port, and the wafer boat in the processing tube is carried out from the furnace mouth, and the recovery period of the deformation of the cover generated when the sealing member is pulled from the lower end surface of the processing tube or the surface of the cover is The torque of the motor for driving the elevating mechanism that lowers the cover is controlled in such a manner that the substrate stays at the mounting position in the wafer boat.

根據本發明之基板處理裝置及半導體裝置之製造方法,即可抑制在從處理管內搬出晶舟之初期階段所產生之蓋的振動。According to the substrate processing apparatus and the method of manufacturing the semiconductor device of the present invention, it is possible to suppress the vibration of the cover which is generated in the initial stage of carrying out the wafer boat from the processing tube.

[用於實施發明的形態][Formation for carrying out the invention]

<本發明之第1實施形態><First Embodiment of the Present Invention>

以下,針對本發明之第1實施形態的基板處理裝置,參照圖式加以說明。Hereinafter, the substrate processing apparatus according to the first embodiment of the present invention will be described with reference to the drawings.

(1) 基板處理裝置之構成(1) Composition of substrate processing device

首先,針對作為半導體裝置之製造製程之一製程之實施基板處理製程之基板處理裝置101的構成例加以說明。第1圖係表示本實施形態之基板處理裝置101之要部的概略構成圖,第2圖係本實施形態之基板處理裝置101的斜立體圖。第3圖係表示基板處理裝置101之處理爐201之細節的縱截面圖。First, a configuration example of the substrate processing apparatus 101 which is a substrate processing process which is one of the manufacturing processes of the semiconductor device will be described. 1 is a schematic configuration diagram of a main part of a substrate processing apparatus 101 of the present embodiment, and FIG. 2 is an oblique perspective view of the substrate processing apparatus 101 of the present embodiment. 3 is a longitudinal cross-sectional view showing details of the processing furnace 201 of the substrate processing apparatus 101.

如第1圖所示,本實施形態之基板處理裝置101,係具備有對作為基板之晶圓10進行處理的處理爐201。晶圓10例如係矽基板,或者亦可為矽以外之半導體基板、玻璃基板、陶瓷基板、塑膠基板等。在處理爐201係設有包含形成有處理室202之後述製程管(process tube)的處理管203,並以包圍處理管203之方式具備有作為後述加熱機構的加熱器(heater)。又,沿著處理爐201之側部設置有作為升降機構的晶舟升降機115。晶舟升降機115之作為支撐部之臂部128係藉由驅動機構126而構成為可升降。在臂部128上,係支撐有作為蓋之密封蓋219,而該蓋係用以開閉設在處理管203之下端的爐口207。又,在密封蓋219上,係設有作為密封構件之密封環221,以將密封蓋219與處理管203之下端面之間予以密封。密封環221例如係以O型環構成。再者,密封蓋219之上面係構成為可載置晶舟11,該晶舟11係將作為基板之晶圓10在保持成水平之狀態下以多段載置。As shown in FIG. 1, the substrate processing apparatus 101 of the present embodiment includes a processing furnace 201 that processes the wafer 10 as a substrate. The wafer 10 is, for example, a germanium substrate, or may be a semiconductor substrate other than germanium, a glass substrate, a ceramic substrate, a plastic substrate, or the like. In the processing furnace 201, a processing tube 203 including a process tube in which a processing chamber 202 is formed later is provided, and a heater as a heating means to be described later is provided so as to surround the processing tube 203. Further, a boat elevator 115 as an elevating mechanism is provided along the side of the processing furnace 201. The arm portion 128 as the support portion of the boat elevator 115 is configured to be movable up and down by the drive mechanism 126. On the arm portion 128, a sealing cover 219 as a cover is supported, and the cover is used to open and close the furnace opening 207 provided at the lower end of the processing tube 203. Further, a seal ring 221 as a sealing member is provided on the seal cap 219 to seal the seal cap 219 from the lower end surface of the process tube 203. The seal ring 221 is formed, for example, by an O-ring. Further, the upper surface of the sealing cover 219 is configured to mount the wafer boat 11, and the wafer boat 11 is placed in a plurality of stages while the wafer 10 as a substrate is horizontally held.

驅動機構126,例如係構成為滾珠螺桿構造,具備有滾珠螺桿軸127、以及未圖示之導引支柱,其中該滾珠螺桿軸127係透過滾珠嚙合在設於臂部128之未圖示的螺帽部,以使臂部128升降於垂直方向,該導引支柱係使臂部128滑動同時導引於垂直方向。主要係藉由螺帽部、滾珠、滾珠螺桿軸127、以及導引支柱,構成本實施形態之驅動機構126。又,在滾珠螺桿軸127之上端部(或者下端部),係設有驅動滾珠螺桿軸127使其旋轉之馬達129。藉此,驅動馬達129使滾珠螺桿軸127旋轉,藉此使臂部128升降。藉此,密封蓋219與載置在其上面之晶舟11即上升或下降,以對處理室202內搬入或搬出晶舟11。又,構成為一旦將晶舟11搬入至處理室202內,藉由晶舟升降機115支撐於臂部128之密封蓋219,即透過密封環221推壓至處理管203之下端面方向,以將處理室202內保持成氣密。The drive mechanism 126 is configured, for example, as a ball screw structure, and includes a ball screw shaft 127 and a guide post (not shown). The ball screw shaft 127 is meshed with a screw (not shown) provided in the arm portion 128. The cap portion is such that the arm portion 128 is raised and lowered in the vertical direction, and the guiding strut causes the arm portion 128 to slide while being guided in the vertical direction. The drive mechanism 126 of the present embodiment is mainly constituted by a nut portion, a ball, a ball screw shaft 127, and a guide post. Further, a motor 129 that drives the ball screw shaft 127 to rotate is provided at an upper end portion (or a lower end portion) of the ball screw shaft 127. Thereby, the drive motor 129 rotates the ball screw shaft 127, thereby raising and lowering the arm portion 128. Thereby, the sealing cover 219 and the wafer boat 11 placed thereon are raised or lowered to carry in or out of the wafer boat 11 into the processing chamber 202. Further, when the wafer boat 11 is carried into the processing chamber 202, the wafer boat lifter 115 is supported by the sealing cover 219 of the arm portion 128, that is, pressed through the seal ring 221 to the lower end surface of the processing tube 203, so that The inside of the processing chamber 202 is kept airtight.

又,在馬達129之驅動軸,係設有測量該驅動軸之轉矩的轉矩感測器271。再者,在馬達129係設有將該馬達129之轉矩控制於既定值的控制部281。藉此,控制部281係在從處理管203之下端面或密封蓋219之表面拉開密封環221時所產生之密封蓋219之變形(例如因振動所產生之變形)的恢復期,以使晶圓10停留在晶舟11內之載置位置的方式,控制馬達129之轉矩。例如,控制成使馬達129之轉矩在一定之範圍內。針對轉矩控制之詳細例將後述。此外,利用控制部281之馬達129的轉矩控制,亦可作成將控制部281組裝於後述之驅動控制部,而以驅動控制部執行的構成。Further, a torque sensor 271 that measures the torque of the drive shaft is provided on the drive shaft of the motor 129. Further, the motor 129 is provided with a control unit 281 that controls the torque of the motor 129 to a predetermined value. Thereby, the control portion 281 is a recovery period of deformation (for example, deformation due to vibration) generated when the seal ring 221 is pulled away from the lower end surface of the process tube 203 or the surface of the seal cap 219, so that The torque of the motor 129 is controlled in such a manner that the wafer 10 stays at the placement position in the wafer boat 11. For example, it is controlled such that the torque of the motor 129 is within a certain range. A detailed example of the torque control will be described later. In addition, the torque control of the motor 129 of the control unit 281 may be configured such that the control unit 281 is incorporated in a drive control unit, which will be described later, and is driven by the drive control unit.

接著,具體地說明基板處理裝置101之整體構成。Next, the overall configuration of the substrate processing apparatus 101 will be specifically described.

如第2圖所示,本實施形態之基板處理裝置101,係具備有框體111。在欲將作為基板之晶圓10搬送至框體111內外時,係使用收納複數個晶圓10之作為晶圓載具(基板收納容器)的卡匣110。在框體111內側之前方,係設有成為卡匣110之收授台的卡匣載台114。卡匣110係構成為藉由未圖示之製程內搬送裝置,載置在卡匣載台114上,並且從卡匣載台114上搬出至框體111外。As shown in FIG. 2, the substrate processing apparatus 101 of the present embodiment is provided with a housing 111. When the wafer 10 as a substrate is to be transported to the inside and outside of the casing 111, a cassette 110 that accommodates a plurality of wafers 10 as a wafer carrier (substrate storage container) is used. A cassette stage 114 that serves as a receiving station for the cassette 110 is provided in front of the inside of the housing 111. The cassette 110 is placed on the cassette stage 114 by an in-process conveyance device (not shown), and is carried out from the cassette stage 114 to the outside of the housing 111.

卡匣110係藉由製程內搬送裝置,以使卡匣110內之晶圓10呈大致垂直姿勢,且卡匣110之晶圓出入口朝向例如上方的方式,載置在卡匣載台114上。卡匣載台114係構成為可使卡匣110朝向框體111之後方往縱方向旋轉90°,以使卡匣110內之晶圓10呈水平姿勢,且使卡匣110之晶圓出入口朝向框體111內之後方。The cassette 110 is placed on the cassette stage 114 by the in-process transfer apparatus such that the wafer 10 in the cassette 110 is in a substantially vertical posture and the wafer inlet and outlet of the cassette 110 is directed upward, for example. The cassette stage 114 is configured to rotate the cassette 110 90° in the longitudinal direction toward the rear of the housing 111 so that the wafer 10 in the cassette 110 is horizontally oriented and the wafer inlet and outlet of the cassette 110 are oriented. The rear side of the casing 111.

在框體111內之前後方向的大致中央部,係設置有成為卡匣110之載置架的卡匣架105。卡匣架105係構成為可在複數段、複數列保管複數個卡匣110。在卡匣架105係設有移載架123,以收納成為晶圓移載機構125之搬送對象的卡匣110。又,在卡匣載台114之上方,係設有預備卡匣架107,而構成為可預備地保管卡匣110。A cassette holder 105 that serves as a mounting frame for the cassette 110 is provided in a substantially central portion of the housing 111 in the front-rear direction. The cassette truss 105 is configured to store a plurality of cassettes 110 in a plurality of stages and in a plurality of columns. A transfer frame 123 is provided in the cassette cradle 105 to accommodate the cassette 110 to be transported by the wafer transfer mechanism 125. Further, a preliminary cassette truss 107 is provided above the cassette stage 114, and the cassette 110 is preliminarily stored.

在卡匣載台114與卡匣架105之間,係設有作為基板收納容器搬送裝置之卡匣搬送裝置118。卡匣搬送裝置118,係具備有可在保持卡匣110下升降之作為升降機構的卡匣升降機118a、以及可在保持卡匣110下水平移動之作為搬送機構的卡匣搬送機構118b。藉由這些卡匣升降機118a與卡匣搬送機構118b之協調動作,而構成為在卡匣載台114、卡匣架105、預備卡匣架107、以及移載架123之間,互相地搬送卡匣110。A cassette transporting device 118 as a substrate storage container transporting device is disposed between the cassette stage 114 and the cassette holder 105. The cassette conveying device 118 is provided with a cassette elevator 118a as an elevating mechanism that can be raised and lowered under the holding cassette 110, and a cassette conveying mechanism 118b as a conveying mechanism that can move horizontally under the holding cassette 110. By the coordinated operation of the cassette elevator 118a and the cassette transport mechanism 118b, the card is transported between the cassette stage 114, the cassette holder 105, the preparatory cassette holder 107, and the transfer frame 123.匣110.

在卡匣架105之後方,係設有作為基板移載機構之晶圓移載機構125。晶圓移載機構125,係具備有可將晶圓10旋轉或直動於水平方向之作為基板移載裝置的晶圓移載裝置125a、以及使晶圓移載裝置125a升降之作為基板移載裝置之升降機構的晶圓移載裝置升降機125b。此外,晶圓移載裝置125a係具備有以水平姿勢保持晶圓10之作為基板移載用治具的鑷鉗(tweezer)125c。藉由這些晶圓移載裝置125a與晶圓移載裝置升降機125b之協調動作,而構成為從移載架123上之卡匣110內拾取晶圓10,以裝填(charging)至作為後述基板保持具之晶舟11,或從晶舟11卸載(discharging)晶圓10,以收納至移載架123上之卡匣110內。A wafer transfer mechanism 125 as a substrate transfer mechanism is provided behind the cassette truss 105. The wafer transfer mechanism 125 includes a wafer transfer device 125a as a substrate transfer device that can rotate or directly move the wafer 10 in the horizontal direction, and a substrate transfer device that lifts and lowers the wafer transfer device 125a. A wafer transfer device lift 125b of the lifting mechanism of the device. Further, the wafer transfer device 125a is provided with a tweezer 125c as a substrate transfer jig that holds the wafer 10 in a horizontal posture. By the coordinated operation of the wafer transfer device 125a and the wafer transfer device elevator 125b, the wafer 10 is picked up from the cassette 110 on the transfer frame 123 and is loaded to be held as a substrate to be described later. The wafer boat 11 is loaded or unloaded from the wafer boat 11 to be received in the cassette 110 on the transfer frame 123.

在框體111之後部上方係設有處理爐201。在處理爐201之下端部,則設有未圖示之作為爐口的開口。此開口係構成為藉由開閉開口之爐口閘門(爐口開閉機構)147進行開閉。針對處理爐201之構成將於後面詳述。A processing furnace 201 is disposed above the rear portion of the casing 111. At the lower end of the processing furnace 201, an opening (not shown) as a furnace opening is provided. This opening is configured to open and close by a furnace gate (port opening/closing mechanism) 147 that opens and closes the opening. The configuration of the processing furnace 201 will be described in detail later.

在處理爐201之下方,係設有使晶舟11升降以使其搬送至處理爐201內外之作為升降機構的晶舟升降機115。在晶舟升降機115,則設有可升降之臂部128。在臂部128上,係以水平姿勢設有作為蓋之密封蓋119,以將晶舟11支撐成垂直,並且將處理爐201之下端部封閉成氣密。Below the processing furnace 201, a boat elevator 115 as a lifting mechanism for moving the boat 11 up and down to be transported to the inside and outside of the processing furnace 201 is provided. In the boat elevator 115, an arm portion 128 that can be raised and lowered is provided. On the arm portion 128, a sealing cover 119 as a cover is provided in a horizontal posture to support the boat 11 in a vertical direction, and the lower end portion of the processing furnace 201 is closed to be airtight.

晶舟11係構成為具備有複數支保持構件,使複數片(例如,50片~150片左右)之晶圓10,以水平姿勢而且以使其中心一致之狀態,整列於垂直方向且以多段保持。針對晶舟11之詳細構成將後述。The wafer boat 11 is configured to include a plurality of holding members, and the wafers 10 of a plurality of sheets (for example, about 50 to 150 sheets) are arranged in a vertical posture and in a state of being aligned in a vertical direction and in a plurality of stages. maintain. The detailed configuration of the boat 11 will be described later.

在卡匣架105之上方,係設有具備供給扇與防塵濾器之潔淨單元134a。潔淨單元134a係構成為使屬淨化後之大氣的潔淨空氣在框體111之內部流通。Above the cassette truss 105, a cleaning unit 134a having a supply fan and a dust filter is provided. The cleaning unit 134a is configured to allow the clean air of the purified atmosphere to flow inside the casing 111.

又,在屬與晶圓移載裝置升降機125b及晶舟升降機115側相反側之框體111的左側端部,係設置有具備供給扇與防塵濾器之潔淨單元(未圖示),以供給潔淨空氣。從未圖示之前述潔淨單元所吹出之潔淨空氣,係構成為在流通於晶圓移載裝置125a、晶舟11之後,吸入至未圖示之排氣裝置,排氣至框體111之外部。Further, a clean unit (not shown) including a supply fan and a dust filter is provided on the left end portion of the casing 111 on the side opposite to the side of the wafer transfer device lift 125b and the boat elevator 115 to supply cleanliness. air. The clean air blown out from the cleaning unit (not shown) is configured to be sucked into the exhaust device (not shown) after flowing through the wafer transfer device 125a and the wafer boat 11, and is exhausted to the outside of the casing 111. .

(2) 基板處理裝置之動作(2) Action of the substrate processing device

其次,針對本實施形態之基板處理裝置101的動作加以說明。Next, the operation of the substrate processing apparatus 101 of the present embodiment will be described.

首先,卡匣110係藉由未圖示之製程內搬送裝置,以使晶圓10呈大致垂直姿勢且卡匣110之晶圓出入口朝向上方的方式,載置在卡匣載台114上。然後,卡匣110係藉由卡匣載台114,朝向框體111之後方使其往縱方向旋轉90°。其結果,卡匣110內之晶圓10即呈水平姿勢,卡匣110之晶圓出入口則朝向框體111內之後方。First, the cassette 110 is placed on the cassette stage 114 by the in-process transfer apparatus (not shown) so that the wafer 10 is in a substantially vertical posture and the wafer inlet and outlet of the cassette 110 are directed upward. Then, the cassette 110 is rotated by 90° in the longitudinal direction toward the rear of the casing 111 by the cassette stage 114. As a result, the wafer 10 in the cassette 110 has a horizontal posture, and the wafer entrance and exit of the cassette 110 faces the rear of the housing 111.

其次,卡匣110係藉由卡匣搬送裝置118,自動地搬送至卡匣架105或預備卡匣架107之指定的架位置以進行收授,並在暫時地保管之後,從卡匣架105或預備卡匣架107移載至移載架123,或者直接搬送至移載架123。Next, the cassette 110 is automatically transported to the designated rack position of the cassette holder 105 or the preparatory cassette holder 107 by the cassette transport device 118 for receipt, and after being temporarily stored, the cassette holder 105 is temporarily stored. Or the preparatory card truss 107 is transferred to the transfer frame 123 or directly transferred to the transfer frame 123.

卡匣110一旦移載至移載架123,晶圓10即藉由晶圓移載裝置125a之鑷鉗125c,通過晶圓出入口從卡匣110予以拾取,藉由晶圓移載裝置125a與晶圓移載裝置升降機125b之協調動作,而裝填(charging)在位於移載架123後方的晶舟11。將晶圓10收授至晶舟11之晶圓移載機構125,返回卡匣110,並將下一晶圓10裝填於晶舟11。Once the cassette 110 is transferred to the transfer frame 123, the wafer 10 is picked up from the cassette 110 through the wafer inlet and outlet by the clamp 125c of the wafer transfer device 125a, and the wafer transfer device 125a and the crystal are transferred. The circular transfer device lift 125b is coordinated and is loaded on the boat 11 located behind the transfer frame 123. The wafer 10 is transferred to the wafer transfer mechanism 125 of the wafer boat 11, returned to the cassette 110, and the next wafer 10 is loaded into the wafer boat 11.

預先所指定之片數的晶圓10一旦裝填至晶舟11,藉由爐口閘門147封閉之處理爐201下端部的開口,即藉由移動爐口閘門147而打開。接著,未圖示之作為蓋的密封蓋係藉由晶舟升降機115上升,藉此保持有處理對象之晶圓10群的晶舟11被氣密地搬入(loading:裝載)至處理爐201內。裝載後,便在處理爐201內對晶圓10實施既定之處理。處理後,晶圓10及卡匣110係以與上述順序相反之順序搬出至框體111之外部。Once the wafer 10 of the predetermined number of wafers is loaded into the wafer boat 11, the opening of the lower end portion of the processing furnace 201 closed by the furnace gate 147 is opened by moving the furnace gate 147. Then, the sealing cover as a cover (not shown) is lifted by the boat elevator 115, whereby the wafer boat 11 holding the wafer 10 to be processed is air-tightly loaded (loaded) into the processing furnace 201. . After the loading, the wafer 10 is subjected to a predetermined process in the processing furnace 201. After the processing, the wafer 10 and the cassette 110 are carried out to the outside of the housing 111 in the reverse order of the above procedure.

(3)處理爐之構成(3) Composition of the treatment furnace

接著,針對本實施形態之基板處理裝置之處理爐201的構成加以說明。第3圖係本發明之一實施形態之基板處理裝置之處理爐的縱截面圖。此外,本實施形態之處理爐201,如第3圖所示般係以CVD裝置(批次式縱形熱壁型減壓CVD裝置)所構成。Next, the configuration of the processing furnace 201 of the substrate processing apparatus of the present embodiment will be described. Fig. 3 is a longitudinal sectional view showing a processing furnace of a substrate processing apparatus according to an embodiment of the present invention. Further, the processing furnace 201 of the present embodiment is constituted by a CVD apparatus (batch type vertical hot wall type pressure reducing CVD apparatus) as shown in Fig. 3 .

(製程管(process tube))(process tube)

處理爐201係具備有以使中心線呈垂直之方式配置成縱向且藉由框體111支撐成固定的縱形製程管(process tube)。製程管係具備有內管204與外管205。內管204及外管205係藉由石英(SiO2 )或碳化矽(SiC)等耐熱性高之材料分別一體成形為圓筒形狀。The processing furnace 201 is provided with a vertical process tube that is disposed in a vertical direction so that the center line is vertical and supported by the frame 111. The process pipe system is provided with an inner pipe 204 and an outer pipe 205. The inner tube 204 and the outer tube 205 are integrally formed into a cylindrical shape by a material having high heat resistance such as quartz (SiO 2 ) or tantalum carbide (SiC).

內管204係形成為上端封閉而下端開口之圓筒形狀。在內管204內,係形成有處理室202,以收納藉由作為基板保持具之晶舟11以水平姿勢積層成多段的晶圓10並進行處理。內管204之下端開口係構成取放保持有晶圓10群之晶舟11的爐口207。因此,內管204之內徑係設計成大於保持有晶圓10群之晶舟11的最大外徑。外管205係形成為上端封閉而下端開口之圓筒形狀,並且側壁部係相對於內管204形成為較大例如相似形狀。亦即,從上方觀看,外管205係以包圍內管204之外側的方式覆蓋成同心圓。內管204之下端部與外管205之下端部之間,係藉由形成為環狀之歧管(manifold)209密封成氣密。又,外管205之下端部與歧管209之外周上端部之間,係藉由密封環222密封成氣密。歧管209係對內管204及外管205安裝成裝卸自如,以使針對內管204及外管205之保養檢查作業或清掃作業易於進行。藉由將歧管209支撐於框體111(參照前述第2圖),製程管便呈安裝成垂直之狀態。因此,藉由由內管204及外管205所構成之製程管、以及歧管209而構成處理管203。The inner tube 204 is formed in a cylindrical shape in which the upper end is closed and the lower end is open. In the inner tube 204, a processing chamber 202 is formed to accommodate and process the wafer 10 which is stacked in a plurality of stages in a horizontal posture by the wafer boat 11 as a substrate holder. The lower end opening of the inner tube 204 constitutes a furnace opening 207 for holding and holding the wafer boat 11 holding the wafer 10 group. Therefore, the inner diameter of the inner tube 204 is designed to be larger than the maximum outer diameter of the wafer boat 11 in which the wafer 10 group is held. The outer tube 205 is formed in a cylindrical shape in which the upper end is closed and the lower end is open, and the side wall portion is formed in a large, for example, similar shape with respect to the inner tube 204. That is, the outer tube 205 is covered in a concentric circle so as to surround the outer side of the inner tube 204 as viewed from above. The lower end portion of the inner tube 204 and the lower end portion of the outer tube 205 are sealed to be airtight by a manifold 209 formed in a ring shape. Further, the lower end portion of the outer tube 205 and the outer peripheral end portion of the manifold 209 are sealed to be airtight by the seal ring 222. The manifold 209 is detachably attached to the inner tube 204 and the outer tube 205 so that the maintenance inspection work or the cleaning operation for the inner tube 204 and the outer tube 205 can be easily performed. By supporting the manifold 209 to the casing 111 (refer to the second drawing described above), the process pipe is mounted in a vertical state. Therefore, the processing tube 203 is constituted by the process tube composed of the inner tube 204 and the outer tube 205 and the manifold 209.

(排氣單元)(exhaust unit)

在歧管209之側壁的一部分,係連接有將處理室202內之氣體予以排氣的排氣系統230。排氣系統230係配置在排氣路徑250的下端部,其中該排氣路徑250係由藉由內管204與外管205之間隙而形成的筒狀空間所構成。構成排氣系統230之排氣管231係連通至排氣路徑250內。依從上游起之順序,在排氣管231設有壓力感測器245、作為壓力調整閥之APC(Auto Pressure Controller:自動壓力控制器)閥242、以及作為真空排氣裝置之真空泵246。真空泵246係構成為可使處理室202內之壓力真空排氣成既定壓力(真空度)。在APC閥242及壓力感測器245,係電氣上連接有壓力控制部236。壓力控制部236係構成為根據藉由壓力感測器245所檢測出之壓力,控制APC閥242之開度,以使處理室202內之壓力在所需之時機成為所需之壓力。主要係藉由排氣管231、排氣路徑250、壓力感測器245、APC閥242、以及真空泵246,構成本實施形態之排氣單元。此外,在排氣系統230之APC閥242的上游側,係連接有進行過加壓防止處理的過加壓防止線233。在過加壓防止線233,則連接有過加壓防止閥234。在處理室202內之壓力變成過加壓,而藉由壓力感測器245檢測出該過加壓時,壓力控制部236即開啟過加壓防止閥234,以釋放處理室202內之過加壓狀態。An exhaust system 230 that exhausts gas within the processing chamber 202 is coupled to a portion of the sidewall of the manifold 209. The exhaust system 230 is disposed at a lower end portion of the exhaust path 250, and the exhaust path 250 is constituted by a cylindrical space formed by a gap between the inner tube 204 and the outer tube 205. The exhaust pipe 231 constituting the exhaust system 230 is communicated into the exhaust path 250. In the order from the upstream, the exhaust pipe 231 is provided with a pressure sensor 245, an APC (Auto Pressure Controller) valve 242 as a pressure regulating valve, and a vacuum pump 246 as a vacuum exhausting device. The vacuum pump 246 is configured to evacuate the pressure in the processing chamber 202 to a predetermined pressure (degree of vacuum). A pressure control unit 236 is electrically connected to the APC valve 242 and the pressure sensor 245. The pressure control unit 236 is configured to control the opening degree of the APC valve 242 based on the pressure detected by the pressure sensor 245 so that the pressure in the processing chamber 202 becomes a desired pressure at a desired timing. The exhaust unit of the present embodiment is mainly constituted by the exhaust pipe 231, the exhaust path 250, the pressure sensor 245, the APC valve 242, and the vacuum pump 246. Further, on the upstream side of the APC valve 242 of the exhaust system 230, an over-pressure prevention line 233 subjected to an overpressure prevention process is connected. When the overpressure prevention line 233 is connected, the overpressure prevention valve 234 is connected. The pressure in the processing chamber 202 becomes over pressurized, and when the overpressure is detected by the pressure sensor 245, the pressure control portion 236 opens the overpressure preventing valve 234 to release the excess in the processing chamber 202. Pressure state.

(基板保持具)(substrate holder)

在歧管209之下方,係設有開閉歧管209之下端開口之作為蓋的密封蓋219。密封蓋219係形成為與歧管209之下端開口之外徑同等以上的圓盤形狀,在其上面外周係設有可密接於歧管209之下端面之作為密封構件的密封環221。在密封環221例如係使用O型環。又,密封蓋219係構成為藉由垂直地配置於製程管203外部之作為升降機構的晶舟升降機115,以晶舟11之載置面呈水平之狀態,升降於垂直方向。因此,藉由晶舟升降機115上升之密封蓋219,係以透過密封環221而被推壓於歧管209之下端面的狀態,密封歧管209之下端開口,而使處理室202成為氣密。Below the manifold 209, a sealing cover 219 as a cover that opens at the lower end of the opening and closing manifold 209 is provided. The seal cap 219 is formed in a disk shape equal to or larger than the outer diameter of the lower end opening of the manifold 209, and a seal ring 221 as a sealing member that can be in close contact with the lower end surface of the manifold 209 is provided on the outer periphery thereof. In the seal ring 221, for example, an O-ring is used. Further, the seal cover 219 is configured to be lifted in the vertical direction by the boat lifter 115 as the elevating mechanism vertically disposed outside the process pipe 203 in a state where the mounting surface of the boat 11 is horizontal. Therefore, the sealing cover 219 which is raised by the boat elevator 115 is pressed against the lower end surface of the manifold 209 through the seal ring 221, and the lower end of the sealing manifold 209 is opened, so that the processing chamber 202 becomes airtight. .

(晶舟升降機)(Crystal lift)

上述之晶舟升降機115,作為一例,係具備有從其下面支撐密封蓋219的臂部128、將臂部128之升降導引於垂直方向之未圖示的導引支柱、以及使臂部128沿著導引支柱升降於垂直方向的驅動機構126。驅動機構126例如係以滾珠螺桿構造構成,例如係以設於臂部128之未圖示的螺帽部、透過未圖示之滾珠嚙合於螺帽部的滾珠螺桿軸127所構成。又,在滾珠螺桿軸127之上端部(或下端部),係設有可驅動滾珠螺桿軸127使其旋轉之馬達129(參照前述第1圖)。藉此,構成為驅動馬達129使滾珠螺桿軸127往既定方向旋轉,藉此使臂部128升降。The above-described boat elevator 115 includes, as an example, an arm portion 128 that supports the seal cover 219 from the lower surface thereof, a guide post (not shown) that guides the elevation of the arm portion 128 in the vertical direction, and the arm portion 128. The drive mechanism 126 is raised and lowered in the vertical direction along the guide post. The drive mechanism 126 is configured by, for example, a ball screw structure, and is configured, for example, by a nut portion (not shown) provided in the arm portion 128 and a ball screw shaft 127 that is meshed with the nut portion through a ball (not shown). Further, a motor 129 (see the first drawing) that can drive the ball screw shaft 127 to rotate is provided at an upper end portion (or a lower end portion) of the ball screw shaft 127. Thereby, the drive motor 129 is configured to rotate the ball screw shaft 127 in a predetermined direction, thereby raising and lowering the arm portion 128.

在密封蓋219上,保持晶圓10之作為基板保持具之晶舟11係垂直地立足支撐。晶舟11例如係由石英(SiO2 )或碳化矽(SiC)等之耐熱性材料構成,並構成為使複數片晶圓10以水平姿勢而且彼此的中心一致之狀態,整列並且以多段保持。此外,在晶舟11之下部,係以水平姿勢將複數片由例如石英或碳化矽等耐熱性材料構成之呈圓板形狀之作為隔熱構件的隔熱板216以多段配置。隔熱板216係以使來自加熱器206之熱難以傳導至歧管209側的方式構成。On the sealing cover 219, the wafer boat 11 as the substrate holder for holding the wafer 10 is vertically supported. The wafer boat 11 is made of, for example, a heat-resistant material such as quartz (SiO 2 ) or tantalum carbide (SiC), and is configured such that the plurality of wafers 10 are aligned in a horizontal posture and at the center of each other, and are held in a plurality of stages. Further, in the lower portion of the wafer boat 11, a plurality of heat insulating plates 216 which are formed of a heat-resistant material such as quartz or tantalum carbide in a horizontal posture as a heat insulating member are arranged in a plurality of stages in a plurality of stages. The heat shield 216 is configured such that heat from the heater 206 is hard to be conducted to the side of the manifold 209.

在密封蓋219之與處理室202相反側,係設有使晶舟11旋轉之旋轉機構254。旋轉機構254之旋轉軸255,係貫通密封蓋219從下方支撐晶舟11。構成為可藉由使旋轉軸255旋轉,在處理室202內可使晶圓10旋轉。密封蓋219係構成為藉由上述之晶舟升降機115而升降於垂直方向,藉此可將晶舟11搬送至處理室202內外。On the opposite side of the sealing cover 219 from the processing chamber 202, a rotating mechanism 254 for rotating the boat 11 is provided. The rotating shaft 255 of the rotating mechanism 254 supports the boat 11 from below through the sealing cover 219. The wafer 10 can be rotated in the processing chamber 202 by rotating the rotating shaft 255. The sealing cover 219 is configured to be lifted and lowered in the vertical direction by the above-described boat elevator 115, whereby the boat 11 can be transported to the inside and outside of the processing chamber 202.

在旋轉機構254及晶舟升降機115,電氣上係連接有驅動控制部237。驅動控制部237係構成為以在所需之時機進行所需之動作的方式控制旋轉機構254及晶舟升降機115之馬達129。A drive control unit 237 is electrically connected to the rotation mechanism 254 and the boat elevator 115. The drive control unit 237 is configured to control the rotation mechanism 254 and the motor 129 of the boat elevator 115 so as to perform a desired operation at a desired timing.

(加熱器單元)(heater unit)

在外管205之外部,係以包圍外管205之方式設有作為加熱機構的加熱器206,該加熱器206係涵蓋整體將製程管203內加熱成均勻或既定之溫度分布。加熱器206係藉由支撐於設在基板處理裝置101之框體111(參照前述第2圖)的加熱器基座251,而呈安裝成垂直之狀態,以例如碳製加熱器(carbon heater)等之電阻加熱器構成。Outside the outer tube 205, a heater 206 as a heating means is provided to surround the outer tube 205, and the heater 206 covers heating the entire process tube 203 to a uniform or predetermined temperature distribution. The heater 206 is mounted in a vertical state by being supported by a heater base 251 provided in the casing 111 (see FIG. 2) of the substrate processing apparatus 101, for example, a carbon heater. Such as a resistance heater.

在製程管203內,係設置有作為溫度檢測器的溫度感測器263。於加熱器206與溫度感測器263,電氣上係連接有溫度控制部238。溫度控制部238係構成為根據藉由前述溫度感測器263所檢測出之溫度資訊,控制對加熱器206之通電狀況,以使處理室202內之溫度在所需之時機成為所需之溫度分布。In the process tube 203, a temperature sensor 263 as a temperature detector is provided. A temperature control unit 238 is electrically connected to the heater 206 and the temperature sensor 263. The temperature control unit 238 is configured to control the energization state of the heater 206 based on the temperature information detected by the temperature sensor 263 so that the temperature in the processing chamber 202 becomes a desired temperature at a desired timing. distributed.

主要係藉由加熱器206、溫度感測器263構成加熱器單元。The heater unit is mainly constituted by a heater 206 and a temperature sensor 263.

(處理氣體供給單元)(Processing gas supply unit)

設有保持於歧管209且垂直地豎立在處理室202內,以對處理室202內供給處理氣體的氣體供給噴嘴230。氣體供給噴嘴230,除了下游側端部為垂直地豎立之L字型類型以外,亦有未圖示之直立類型(straight type)等。氣體供給噴嘴230係藉由石英等具有耐熱性之非金屬材料所構成。此外,氣體供給噴嘴230之上游側端部係突出至處理爐201外,並連接於透過氣體供給噴嘴230將處理氣體供給至處理室202內的氣體供給管232。又,在氣體供給管232之上游側,係透過作為氣體流量控制器之質量流動控制器(MFC)241,連接有未圖示之處理氣體供給源或惰性氣體供給源。於質量流動控制器241,電氣上係連接有氣體流量控制部235。質量流動控制器241係構成為在所需之時機控制供給至處理室202內之氣體的流量,以使其成為所需之量。通過質量流動控制器241、氣體供給管232、以及氣體供給噴嘴230,將處理氣體供給至處理室202內的處理氣體供給單元,亦可設置複數個系統。例如,有供給原料氣體的系統、供給含有添加物之氣體的系統、以及供給稀釋氣體的系統等。A gas supply nozzle 230 is provided that is held in the manifold 209 and vertically erected in the processing chamber 202 to supply a processing gas to the processing chamber 202. The gas supply nozzle 230 has an erect type (not shown) or the like, in addition to the L-shaped type in which the downstream end portion is vertically erected. The gas supply nozzle 230 is made of a non-metallic material having heat resistance such as quartz. Further, the upstream end portion of the gas supply nozzle 230 protrudes outside the processing furnace 201, and is connected to the gas supply nozzle 230 to supply the processing gas to the gas supply pipe 232 in the processing chamber 202. Further, on the upstream side of the gas supply pipe 232, a mass flow controller (MFC) 241 as a gas flow controller is connected to a processing gas supply source or an inert gas supply source (not shown). A gas flow rate control unit 235 is electrically connected to the mass flow controller 241. The mass flow controller 241 is configured to control the flow rate of the gas supplied to the processing chamber 202 at a desired timing so as to be a desired amount. The processing gas is supplied to the processing gas supply unit in the processing chamber 202 by the mass flow controller 241, the gas supply tube 232, and the gas supply nozzle 230, and a plurality of systems may be provided. For example, there are a system for supplying a material gas, a system for supplying a gas containing an additive, a system for supplying a diluent gas, and the like.

(控制器(controller))(controller)

氣體流量控制部235、壓力控制部236、驅動控制部237、以及溫度控制部238,係亦構成包含顯示部之操作部、輸出入部,電氣上係連接於控制基板處理裝置整體的主控制部239。這些氣體流量控制部235、壓力控制部236、驅動控制部237、溫度控制部238、以及主控制部239,係構成作為控制器240。The gas flow rate control unit 235, the pressure control unit 236, the drive control unit 237, and the temperature control unit 238 also constitute an operation unit including an input unit and an input/output unit, and are electrically connected to the main control unit 239 of the entire control substrate processing apparatus. . The gas flow rate control unit 235, the pressure control unit 236, the drive control unit 237, the temperature control unit 238, and the main control unit 239 are configured as the controller 240.

(4) 基板處理製程(4) Substrate processing process

其次,參照第4圖之流程圖,說明藉由上述基板處理裝置101實施之半導體裝置(device)之製造製程之一製程。Next, a process of manufacturing a semiconductor device implemented by the substrate processing apparatus 101 will be described with reference to a flowchart of FIG.

首先,將複數片晶圓10裝填(charging)於從製程管203內搬出之晶舟11。藉此,在晶舟11收容待形成薄膜之複數片,例如100片、直徑300mm之晶圓10。晶圓10之裝填一結束,即藉由晶舟升降機115抬起保持有複數片晶圓10之晶舟11,搬入(晶舟裝載(boat loading))至處理室202內(晶舟搬入至處理室內:S1)。在該狀態,歧管209之下端面,係呈透過密封環221藉由密封蓋219密封(seal)之狀態,處理管203之內部成為氣密(使處理管內氣密:S2)。First, the plurality of wafers 10 are loaded onto the wafer boat 11 that is carried out from the process tube 203. Thereby, a plurality of sheets of the film to be formed, for example, 100 wafers having a diameter of 300 mm, are accommodated in the wafer boat 11. After the filling of the wafer 10 is completed, the wafer boat 11 holding the plurality of wafers 10 is lifted by the boat elevator 115, and loaded (boat loading) into the processing chamber 202 (the boat is moved into the processing) Indoor: S1). In this state, the lower end surface of the manifold 209 is in a state of being sealed through the seal ring 221 through the seal ring 219, and the inside of the process tube 203 is airtight (the inside of the process tube is airtight: S2).

將晶圓10搬入至處理室202內之製程一結束,即藉由真空泵246進行真空排氣,以使處理室202內成為所需之壓力(真空度),藉此排出處理室202內之氣體環境。此時,以壓力感測器245測量處理室202內之壓力。根據該所測量之壓力,反饋控制APC閥242之開度。又,藉由加熱器206對處理室202內加熱,以使處理室202內成為所需之溫度。接著,加熱器206之通電狀況係根據溫度感測器263檢測出之溫度資訊來反饋控制,以使處理室202內成為所需之溫度分布。接著,藉由旋轉機構254使晶舟11旋轉,藉此使晶圓10旋轉。When the process of loading the wafer 10 into the processing chamber 202 is completed, vacuum evacuation is performed by the vacuum pump 246 to make the inside of the processing chamber 202 a desired pressure (vacuum degree), thereby discharging the gas in the processing chamber 202. surroundings. At this time, the pressure in the process chamber 202 is measured by the pressure sensor 245. Based on the measured pressure, the feedback controls the opening of the APC valve 242. Further, the inside of the processing chamber 202 is heated by the heater 206 to bring the inside of the processing chamber 202 to a desired temperature. Next, the energization status of the heater 206 is feedback controlled based on the temperature information detected by the temperature sensor 263 to make the inside of the processing chamber 202 a desired temperature distribution. Next, the wafer boat 11 is rotated by the rotating mechanism 254, thereby rotating the wafer 10.

接著,將處理氣體供給至處理室202內,以執行對晶圓10上之成膜處理。亦即,從氣體供給管232供給從未圖示之處理氣體供給源所供給且以MFC241控制成所需之流量的處理氣體,透過氣體供給噴嘴230導入至處理室202內。所導入之處理氣體,係在處理室202內上升,從內管204之上端開口流出至排氣路徑250內,再從排氣系統230排氣。處理氣體在通過處理室202內時,係與晶圓10之表面接觸,此時例如藉由熱CVD反應等使薄膜沉積(deposition)在晶圓10之表面上(基板處理:S3)。Next, the processing gas is supplied into the processing chamber 202 to perform a film forming process on the wafer 10. In other words, the processing gas supplied from a processing gas supply source (not shown) and controlled to a desired flow rate by the MFC 241 is supplied from the gas supply pipe 232, and introduced into the processing chamber 202 through the gas supply nozzle 230. The introduced process gas rises in the processing chamber 202, flows out from the upper end opening of the inner tube 204 into the exhaust path 250, and is exhausted from the exhaust system 230. When the processing gas passes through the processing chamber 202, it is in contact with the surface of the wafer 10, and at this time, a film is deposited on the surface of the wafer 10 by, for example, a thermal CVD reaction (substrate processing: S3).

成膜處理一結束,即執行後沖洗(after purge)處理。亦即,從氣體供給管232透過氣體供給噴嘴230,將惰性氣體供給至處理室202內。又,此時係藉由真空排氣裝置246執行真空排氣處理。其結果,處理室202內之氣體環境藉由惰性氣體淨化。Upon completion of the film forming process, an after purge process is performed. That is, the gas supply nozzle 232 is passed through the gas supply nozzle 230 to supply the inert gas into the processing chamber 202. Further, at this time, the vacuum exhaust treatment is performed by the vacuum exhaust unit 246. As a result, the gaseous environment within the processing chamber 202 is purified by an inert gas.

後沖洗處理一結束,即執行大氣返回處理。亦即,停止真空排氣處理,僅執行惰性氣體之供給處理。其結果,處理室202內之壓力便恢復至常壓。At the end of the post-flushing process, the atmospheric return process is performed. That is, the vacuum evacuation process is stopped, and only the supply process of the inert gas is performed. As a result, the pressure in the processing chamber 202 is restored to normal pressure.

大氣返回處理一結束,即執行晶舟之搬出。亦即,藉由晶舟升降機115使密封蓋219下降,以打開歧管209下端之爐口207,並且以使完成成膜處理之晶圓10載置在晶舟11之狀態,從歧管209下端之爐口207搬出(晶舟卸載(boat unloading))至製程管203之外部(晶舟之搬出:S4)。然後,藉由晶舟11回收(晶圓卸載(wafer discharge))完成成膜處理之晶圓10,而結束第1批次之處理。以下,同樣地,第2批次以後亦對處理對象之晶圓10執行上述處理。When the atmospheric return processing is completed, the wafer boat is carried out. That is, the sealing cover 219 is lowered by the boat elevator 115 to open the furnace opening 207 at the lower end of the manifold 209, and the wafer 10 which has completed the film forming process is placed in the state of the wafer boat 11 from the manifold 209. The lower end of the furnace port 207 is unloaded (boat unloading) to the outside of the process pipe 203 (the boat is carried out: S4). Then, the wafer 10 subjected to the film formation process is recovered by the wafer boat 11 (wafer discharge), and the processing of the first batch is completed. In the same manner, the above-described processing is also performed on the wafer 10 to be processed in the second batch.

此處,將晶舟11之搬出製程S4的細節說明於以下。Here, the details of the carry-out process S4 of the wafer boat 11 will be described below.

(步驟S4-1)(Step S4-1)

在結束上述基板處理(S3),處理室202內剛返回大氣氣體環境之後,藉由晶舟升降機115使密封蓋219透過密封環221,推壓於處理管203(實質上係歧管209)之下端面。此時,馬達129係被驅動往使臂部128上升之方向,以輸出可推壓密封環221之轉矩(密封環係密接在處理管下端面之狀態:S4-1)。此時之轉矩係馬達129之例如額定轉矩的-37%。以下,在馬達129之轉矩為負(-)的情況下,係表示藉由驅動馬達129,將馬達129驅動至透過密封環221使密封蓋219推壓於處理管203之下端面之方向(上方向)的狀態。After the substrate processing (S3) is completed, immediately after returning to the atmospheric gas atmosphere in the processing chamber 202, the sealing cover 219 is passed through the sealing ring 221 by the boat elevator 115, and is pressed against the processing tube 203 (substantially the manifold 209). Lower end face. At this time, the motor 129 is driven to move the arm portion 128 upward to output a torque that can press the seal ring 221 (the seal ring is in close contact with the lower end surface of the processing tube: S4-1). The torque at this time is, for example, -37% of the rated torque of the motor 129. Hereinafter, when the torque of the motor 129 is negative (-), it is shown that the motor 129 is driven to the transmission seal 221 by the drive motor 129 to press the seal cap 219 against the lower end surface of the process tube 203 ( The state of the up direction).

另一方面,在馬達129之轉矩為正(+)的情況下,係表示藉由驅動馬達129,將馬達129驅動至使透過密封環221密接在處理管203下端面之密封蓋219分離之方向(下方向)的狀態。On the other hand, when the torque of the motor 129 is positive (+), it means that the motor 129 is driven to separate the sealing cover 219 which is in close contact with the lower end surface of the processing tube 203 through the sealing ring 221 by the driving motor 129. The direction of the direction (downward direction).

從密封環221密接在處理管203之下端面的上述狀態,使馬達129之旋轉方向反轉,將馬達129驅動至使密封蓋219下降之方向。此時,藉由控制部281,在從處理管203之下端面或密封蓋219之表面拉開密封環221時所產生之密封蓋219之變形(例如振動)的恢復期,以使晶圓10停留在晶舟11內之載置位置的方式,控制馬達129的轉矩。而且馬達129之轉矩係設定成可從處理管203之下端面拉開密封環221的轉矩值。以下之說明中,係針對密封環221為固定在密封蓋219側且以密接於處理管203之下端面的方式接觸的情況加以說明。當然,反之,在密封環221為固定在處理管203之下端面側且以密接於密封蓋219側的方式接觸的情況下,亦同樣地可進行馬達129的轉矩控制。The state in which the seal ring 221 is in close contact with the lower end surface of the process tube 203 reverses the direction of rotation of the motor 129, and drives the motor 129 to a direction in which the seal cap 219 is lowered. At this time, by the control unit 281, the recovery period (for example, vibration) of the sealing cover 219 generated when the seal ring 221 is pulled from the lower end surface of the processing tube 203 or the surface of the sealing cover 219 is restored, so that the wafer 10 is caused. The torque of the motor 129 is controlled in such a manner as to stay at the placement position in the wafer boat 11. Further, the torque of the motor 129 is set to a torque value at which the seal ring 221 can be pulled away from the lower end surface of the process tube 203. In the following description, the case where the seal ring 221 is fixed to the seal cover 219 side and is in close contact with the lower end surface of the process tube 203 will be described. On the other hand, in the case where the seal ring 221 is fixed to the lower end surface side of the process tube 203 and is in contact with the seal cover 219 side, the torque control of the motor 129 can be similarly performed.

在剛開始將馬達129驅動往使密封蓋219下降之方向後,密封環221係持續著貼附在處理管203之下端面的狀態。同時地,因藉由晶舟升降機115使密封蓋219下降之動作所產生的拉力,密封環221被拉往垂直下方。在此狀態下,馬達129之轉矩係逐漸上升。接著,由於馬達129之轉矩係受上限值限制,因此馬達129之轉矩會上升至上限值為止。該上限值係決定成以下之轉矩值:在從處理管203之下端面(或密封蓋219之表面)拉開密封環221時所產生之密封蓋219之變形(例如振動)的恢復期,從晶舟11之晶圓載置位置觀看,使晶圓10不會浮起且使晶圓10停留在晶舟11內之載置位置。Immediately after the motor 129 is driven to the direction in which the seal cap 219 is lowered, the seal ring 221 is continuously attached to the lower end surface of the process tube 203. At the same time, the seal ring 221 is pulled vertically downward due to the pulling force generated by the action of lowering the seal cap 219 by the boat elevator 115. In this state, the torque of the motor 129 gradually rises. Next, since the torque of the motor 129 is limited by the upper limit value, the torque of the motor 129 rises to the upper limit value. The upper limit value is determined as a recovery value of a deformation period (e.g., vibration) of the seal cap 219 generated when the seal ring 221 is pulled away from the lower end surface of the process tube 203 (or the surface of the seal cap 219). When viewed from the wafer mounting position of the wafer boat 11, the wafer 10 does not float and the wafer 10 stays in the loading position in the wafer boat 11.

或者,上述馬達129之轉矩的上限值,係例如,設定成在密封蓋219之變形(振動)欲返回原狀態的恢復期,使產生在晶舟11之加速度成為重力加速度以下。亦即,欲使載置在晶舟11之晶圓10以從其載置位置浮起的方式分離,則晶舟11必需較晶圓10更快速下降。因此,產生在晶舟11之加速度(向下之加速度)成為比重力加速度大時,晶圓10從晶舟11觀看即呈浮起的狀態。因此,藉由使產生在晶舟11之加速度為重力加速度以下,即可防止從晶舟11之晶圓載置位置觀看晶圓10之浮起。Alternatively, the upper limit value of the torque of the motor 129 is set to, for example, a recovery period in which the deformation (vibration) of the seal cap 219 is returned to the original state, and the acceleration generated in the wafer boat 11 is equal to or less than the gravitational acceleration. That is, in order to separate the wafer 10 placed on the wafer boat 11 so as to float from its mounting position, the wafer boat 11 must be lowered more rapidly than the wafer 10. Therefore, when the acceleration (downward acceleration) of the wafer boat 11 becomes larger than the gravitational acceleration, the wafer 10 floats as viewed from the wafer boat 11. Therefore, by causing the acceleration generated in the wafer boat 11 to be below the gravitational acceleration, the floating of the wafer 10 can be prevented from being viewed from the wafer mounting position of the wafer boat 11.

(步驟S4-2)(Step S4-2)

接著,達到所設定之轉矩的上限值為止,藉由晶舟升降機115持續將密封蓋219拉往下降方向,同時地亦持續將密封環221拉往下降方向。接著,即使是達到所設定之轉矩的上限值之前,當將密封環221拉往下方之力勝過密封環221對處理管203之下端面的密接力時,即可從處理管203之下端面拉開密封環221(密封環從處理管下端面剝離:S4-2)。Then, until the upper limit of the set torque is reached, the boat lifter 115 continues to pull the seal cap 219 in the downward direction, and at the same time, the seal ring 221 is continuously pulled downward. Then, even before the upper limit value of the set torque is reached, when the force of pulling the seal ring 221 downward is better than the adhesion force of the seal ring 221 to the lower end surface of the process tube 203, the process tube 203 can be The lower end faces open the seal ring 221 (the seal ring is peeled off from the lower end surface of the treatment tube: S4-2).

(步驟S4-2之另一例)(Another example of step S4-2)

又,即使是在藉由晶舟升降機115使密封蓋219下降動作之途中,馬達129之轉矩雖已達到所設定之上限值但仍無法分離的情況下,亦以該上限值之轉矩驅動馬達129,藉由晶舟升降機115持續將密封蓋219拉往下降方向。此時,亦與密封蓋219一起持續將密封蓋219拉往下降方向。接著,當密封蓋219持續受拉引時,密接在處理管203之下端面的密封環221便逐漸地剝離,在經過某一定期間後之時點,拉引密封環221之力勝過密封環221之貼附力,即可從處理管203之下端面拉開密封環221(密封環從處理管下端面剝離:S4-2)。Further, even if the torque of the motor 129 has reached the upper limit value but cannot be separated while the seal 219 is being lowered by the boat elevator 115, the upper limit value is also turned. The moment drive motor 129 continues to pull the seal cap 219 in the descending direction by the boat elevator 115. At this time, the sealing cover 219 is also continuously pulled in the descending direction together with the sealing cover 219. Then, when the sealing cover 219 is continuously pulled, the sealing ring 221 which is closely adhered to the lower end surface of the processing tube 203 is gradually peeled off. After a certain period of time, the force of pulling the sealing ring 221 outweighs the sealing ring 221 With the attaching force, the sealing ring 221 can be pulled from the lower end surface of the processing tube 203 (the sealing ring is peeled off from the lower end surface of the processing tube: S4-2).

此時,由於馬達129係被限制在所設定之上限的轉矩值進行驅動,因此在從處理管203之下端面拉開密封環221的瞬間,並不會產生超過所設定之上限之轉矩值的轉矩。因此,即使密封蓋219變形而產生振動,該變形亦會在使晶圓10停留在晶舟11內之載置位置的範圍內。At this time, since the motor 129 is driven by the torque value limited to the set upper limit, the torque exceeding the set upper limit is not generated at the moment when the seal ring 221 is pulled from the lower end surface of the processing tube 203. The torque of the value. Therefore, even if the sealing cover 219 is deformed to generate vibration, the deformation is in a range in which the wafer 10 is placed at the mounting position in the wafer boat 11.

(步驟S4-3)(Step S4-3)

接著,在拉開密封環221後,馬達129係以所設定之上限值或其以下的轉矩驅動,藉由晶舟升降機115使密封蓋219下降(密封蓋與晶舟之下降(密封環從處理管下端面分離後):S4-3)。因此,在從處理管203之下端面或密封蓋219之表面拉開密封環221時,晶圓10係停留在晶舟11內之載置位置。Next, after the seal ring 221 is pulled apart, the motor 129 is driven by the set upper limit or lower, and the seal cover 219 is lowered by the boat elevator 115 (the seal cover and the boat are lowered (seal ring) After separation from the lower end of the treatment tube): S4-3). Therefore, when the seal ring 221 is pulled away from the lower end surface of the process tube 203 or the surface of the seal cap 219, the wafer 10 stays at the placement position in the wafer boat 11.

又,控制部281亦可控制成:使剛要從處理管203之下端面或密封蓋219之表面開始拉開密封環221之動作前之推壓密封環221之馬達129的轉矩,成為比將密封環221推壓至處理管203之下端面及密封蓋219之表面時之馬達129的轉矩還小。Further, the control unit 281 may be controlled such that the torque of the motor 129 that presses the seal ring 221 just before the operation of pulling the seal ring 221 from the lower end surface of the processing tube 203 or the surface of the seal cap 219 becomes a ratio The torque of the motor 129 when the seal ring 221 is pushed to the lower end surface of the process tube 203 and the surface of the seal cap 219 is still small.

再者,控制部281亦可構成為在從處理管203之下端面或密封蓋219之表面拉開密封環221時所產生之臂部128之變形(例如,振動)的恢復期,以使晶圓10停留在晶舟11內之載置位置的方式,控制馬達129的轉矩。Further, the control unit 281 may be configured to recover the deformation (for example, vibration) of the arm portion 128 generated when the seal ring 221 is pulled from the lower end surface of the processing tube 203 or the surface of the sealing cover 219 to make the crystal The torque of the motor 129 is controlled in such a manner that the circle 10 stays at the placement position in the boat 11.

此外,控制部281亦可控制成在從處理管203之下端面或密封蓋219之表面拉開密封環221時,使馬達129之轉矩依時序變動。Further, the control unit 281 may be controlled to change the torque of the motor 129 in accordance with the timing when the seal ring 221 is pulled away from the lower end surface of the processing tube 203 or the surface of the sealing cover 219.

(5) 本實施形態之效果(5) Effect of this embodiment

根據本實施形態,可發揮以下所示之1項或複數項的效果。According to this embodiment, the effects of one or more of the following items can be exhibited.

(a) 本實施形態之控制部281,係在從密封環221貼附於處理管203之下端面或密封蓋219之表面的狀態拉開時,以使載置在晶舟11內之晶圓10停留在載置位置的方式,控制馬達129的轉矩。因此,在密封環221貼附於處理管203之下端面或密封蓋219之表面的狀態,開始密封蓋219之下降,而使密封蓋219之截面變形成伸展,從下端面拉開密封環221時,即使因密封蓋219之變形欲恢復所產生之密封蓋219之振動(衰減振動)傳達至晶舟11,亦可防止從晶圓載置位置(基板載置位置)觀看之晶圓10的浮起,而能以穩定地載置晶圓10之狀態從處理管203內搬出晶舟11。(a) The control unit 281 of the present embodiment is configured to pull the wafer placed in the wafer boat 11 when the sealing ring 221 is attached to the lower end surface of the processing tube 203 or the surface of the sealing cover 219. The torque of the motor 129 is controlled by the manner in which it stays at the placement position. Therefore, in a state where the seal ring 221 is attached to the lower end surface of the process tube 203 or the surface of the seal cap 219, the lowering of the seal cap 219 is started, and the cross section of the seal cap 219 is deformed to stretch, and the seal ring 221 is pulled away from the lower end surface. At this time, even if the vibration (attenuation vibration) of the sealing cover 219 due to the deformation of the sealing cover 219 is transmitted to the wafer boat 11, the floating of the wafer 10 viewed from the wafer mounting position (substrate mounting position) can be prevented. The wafer boat 11 can be carried out from the processing tube 203 in a state in which the wafer 10 is stably placed.

(b) 又,由於在密封蓋219變形之恢復期的初期,可能產生從晶圓載置位置(基板載置位置)觀看之晶圓10的浮起,因此為了防止該情形只要僅在密封蓋219變形之恢復期之初期的期間進行馬達129之轉矩控制即可。於是,在其以外之期間之從處理管203(歧管209)之下端面拉開密封環221後,不對馬達129進行轉矩控制,例如可縮小馬達129之轉矩加快移動速度。藉此,可提升從處理管203內搬出晶舟11之處理量(throughput)。(b) Further, since the floating of the wafer 10 viewed from the wafer placement position (substrate placement position) may occur at the initial stage of the recovery period of the deformation of the sealing cover 219, in order to prevent this, only the sealing cover 219 is provided. The torque control of the motor 129 may be performed during the initial period of the recovery period of the deformation. Then, after the seal ring 221 is pulled out from the lower end surface of the processing tube 203 (manifold 209) in other periods, the motor 129 is not torque-controlled, and for example, the torque of the motor 129 can be reduced to increase the moving speed. Thereby, the throughput of carrying out the wafer boat 11 from the processing tube 203 can be increased.

(c) 藉由控制部281控制成:使剛要從處理管203之下端面或密封蓋219之表面開始拉開密封環221之動作前之推壓密封環221之馬達129的轉矩,成為比使密封環221推壓至處理管203之下端面及密封蓋219之表面時之馬達129的轉矩還小。藉此,由於會弱化剛要使密封蓋219下降之動作前之密封環221對處理管203之下端面或密封蓋219之表面的密接力,因此變得易於從處理管203之下端面或密封蓋219之表面分離密封環221。因此,能以馬達129之轉矩小之狀態,從處理管203之下端面或密封蓋219之表面拉開密封環221。(c) The control unit 281 controls the torque of the motor 129 that presses the seal ring 221 just before the operation of pulling the seal ring 221 from the lower end surface of the processing tube 203 or the surface of the seal cap 219. The torque of the motor 129 is smaller than when the seal ring 221 is pushed to the lower end surface of the process tube 203 and the surface of the seal cap 219. Thereby, since the sealing force of the seal ring 221 immediately before the action of lowering the seal cap 219 to the lower end surface of the process tube 203 or the surface of the seal cap 219 is weakened, it becomes easy to be sealed from the lower end surface of the process tube 203 or sealed. The surface of the cover 219 separates the seal ring 221. Therefore, the seal ring 221 can be pulled away from the lower end surface of the processing tube 203 or the surface of the sealing cover 219 in a state where the torque of the motor 129 is small.

(d) 藉由控制部281在臂部128之變形(例如,振動)的恢復期,以使晶圓10停留在晶舟11內之載置位置的方式,控制馬達129之轉矩的構成中,在密封環221貼附於處理管203之下端面或密封蓋219之表面的狀態,開始晶舟11及密封蓋219之下降,支撐密封蓋219之臂部128變形,在從處理管203之下端面或密封蓋219之表面拉開密封環221時,有時臂部128之變形會欲恢復。在該臂部128之變形欲恢復時所產生之臂部128之振動(衰減振動)會透過密封蓋219傳達至晶舟11。此時,由於藉由控制部281以使載置在晶舟11內之晶圓10停留在載置位置的方式,控制馬達129的轉矩,因此可防止從晶圓10之載置位置觀看之晶圓10的浮起,且能以穩定地載置晶圓10之狀態從處理管203之處理室202內搬出晶舟11。(d) The control unit 281 controls the torque of the motor 129 in such a manner that the wafer 10 stays at the placement position in the wafer boat 11 during the recovery period of the deformation (for example, vibration) of the arm portion 281. When the sealing ring 221 is attached to the lower end surface of the processing tube 203 or the surface of the sealing cover 219, the lowering of the boat 11 and the sealing cover 219 is started, and the arm portion 128 supporting the sealing cover 219 is deformed, and the processing tube 203 is deformed. When the lower end surface or the surface of the sealing cover 219 is pulled apart from the seal ring 221, the deformation of the arm portion 128 may be restored. The vibration (attenuation vibration) of the arm portion 128 generated when the deformation of the arm portion 128 is to be restored is transmitted to the boat 11 through the sealing cover 219. At this time, since the control unit 281 controls the torque of the motor 129 so that the wafer 10 placed in the wafer boat 11 stays at the placement position, it is possible to prevent the wafer 10 from being placed at the mounting position. The wafer 10 is floated, and the wafer boat 11 can be carried out from the processing chamber 202 of the processing tube 203 in a state where the wafer 10 is stably placed.

(e) 可以藉由控制成使馬達129之轉矩依時序變動,例如依時序增加,而逐漸地弱化密封環221對處理管203之下端面的貼附力,拉開密封環221。藉此,晶圓10並不會從載置在密封蓋219上之晶舟11的晶圓載置位置振動而浮起,而可從處理管203之下端面拉開密封環221。然而,必需使馬達129之轉矩依時序變動的期間不會過長,例如藉由進行時間監測,將使馬達129之轉矩依時序增加的期間抑制在例如20秒以下左右,藉此即可抑制處理量之大幅的降低。尤其,對因例如晶圓處理時之熱、晶圓處理時所產生之副生成物等的影響,導致密封環221對處理管203之下端面之貼附力增大的情況下、或在設定有馬達129之輸出轉矩之上限值時以該上限值之轉矩難以拉開密封環221的情況下是有效的。(e) The sealing ring 221 can be pulled apart by controlling the torque of the motor 129 to vary in time series, for example, by increasing the timing, thereby gradually weakening the adhesion of the seal ring 221 to the lower end surface of the processing tube 203. Thereby, the wafer 10 does not vibrate from the wafer mounting position of the wafer boat 11 placed on the sealing cover 219, and the sealing ring 221 can be pulled away from the lower end surface of the processing tube 203. However, it is necessary that the period in which the torque of the motor 129 is changed in accordance with the time series is not excessively long. For example, by performing time monitoring, the period during which the torque of the motor 129 is increased in time is suppressed to, for example, about 20 seconds or less. A large reduction in the amount of processing is suppressed. In particular, in the case of, for example, heat during wafer processing, by-products generated during wafer processing, or the like, the adhesion force of the seal ring 221 to the lower end surface of the process tube 203 is increased, or is set. When the upper limit of the output torque of the motor 129 is present, it is effective when the seal ring 221 is difficult to be pulled by the torque of the upper limit value.

(實施例1)(Example 1)

本實施形態之基板處理裝置101中,係藉由控制部281將從馬達129所輸出之轉矩控制在既定之上限值以下。藉此,在從處理管203之下端面拉開密封環221時,以使晶圓10停留在晶舟11內之載置位置的方式,將從馬達129所輸出之轉矩控制在既定之上限值以下。將針對此情況之密封蓋219之位置與經過時間的關係圖、密封蓋219之移動速度與經過時間的關係圖、以及馬達129之轉矩比與經過時間的關係圖表示於第5圖。In the substrate processing apparatus 101 of the present embodiment, the torque output from the motor 129 is controlled by the control unit 281 to be equal to or lower than a predetermined upper limit value. Thereby, when the seal ring 221 is pulled from the lower end surface of the process tube 203, the torque output from the motor 129 is controlled to be predetermined so that the wafer 10 stays at the placement position in the wafer boat 11. Below the limit. The relationship between the position of the seal cap 219 and the elapsed time in this case, the relationship between the moving speed of the seal cap 219 and the elapsed time, and the relationship between the torque ratio of the motor 129 and the elapsed time are shown in Fig. 5.

圖表中,上段圖表之縱軸係表示從處理管203被氣密地密封之狀態之密封蓋219的位置起之密封蓋219的移動量。中段圖表之縱軸係表示密封蓋219的下降速度。下段圖表之縱軸則以百分比表示所輸出之轉矩對馬達129之額定轉矩的比例(轉矩比)。在表示轉矩之縱軸中,係以使馬達129驅動往使封蓋219下降之方向時之馬達129的轉矩比為正(+),以使馬達129驅動往使封蓋219上升之方向時之馬達129的轉矩比為負(-)來表示。又,各圖表之橫軸係表示經過時間。此外,在之後說明之密封蓋219之位置與經過時間的關係圖、密封蓋219之移動速度與經過時間的關係圖、以及馬達129之轉矩比與經過時間的關係圖中,縱軸及橫軸亦與上述相同。In the graph, the vertical axis of the upper graph indicates the amount of movement of the seal cap 219 from the position of the seal cap 219 in a state in which the process tube 203 is hermetically sealed. The vertical axis of the middle section chart indicates the descending speed of the sealing cover 219. The vertical axis of the lower graph shows the ratio of the torque output to the rated torque of the motor 129 (torque ratio) as a percentage. In the vertical axis indicating the torque, the torque ratio of the motor 129 when the motor 129 is driven to the direction in which the cover 219 is lowered is positive (+) to drive the motor 129 to the direction in which the cover 219 is raised. The torque ratio of the motor 129 is represented by a negative (-). Moreover, the horizontal axis of each graph indicates the elapsed time. Further, the relationship between the position of the seal cap 219 and the elapsed time, the relationship between the moving speed of the seal cap 219 and the elapsed time, and the relationship between the torque ratio of the motor 129 and the elapsed time are shown in the vertical axis and the cross direction. The axis is also the same as above.

如第5圖所示,藉由控制部281將馬達129之輸出轉矩的上限值以轉矩比限制於8%。上限值係設定成在從處理管203之下端面拉開密封環221的瞬間,使載置在密封蓋219之上面的晶舟11、或載置在晶舟11之晶圓10,從以密封蓋219之表面為基準的位置觀看,不會浮起的轉矩比。又,轉矩比之上限值係可依據馬達129之額定輸出、晶舟11、密封環221、臂部128等之重量等適當加以選擇而予以決定。欲拉開密接在處理管203之下端面的密封環221,從馬達129輸出轉矩時,2秒鐘左右持續輸出以轉矩比之上限值後,即可從處理管203之下端面拉開密封環221。在該拉開之瞬間,即使下降方向之加速度施加於密封蓋219,以設定成上限值之轉矩比,載置在密封蓋219之上面的晶舟11、或載置在晶舟11之晶圓10,從以密封蓋219之表面為基準的位置觀看,並不會成為浮起之狀態。接著,在拉開密接在處理管203之下端面的密封環221後,以馬達129之轉矩輸出以轉矩比設定在8%以下的轉矩狀態,與密封蓋219一起載置在其上之晶舟11即下降,而從處理管203之處理室202內搬出。如轉矩比與經過時間之關係圖所示,可知以約6%至7%之轉矩比,密封蓋219即下降。此時,如位置與經過時間之關係圖及移動速度與經過時間之關係圖所示,可知以大致一定之速度下降。以此方式,來自馬達129之輸出轉矩若為6%至7%之轉矩比,即可使載置有收納晶圓10之晶舟11的密封蓋219高速地下降。因此,藉由將馬達129之輸出轉矩的轉矩比設定在8%以下,即可抑制密封環221拉開時之振動,以進行晶舟11搬出的高速動作。As shown in Fig. 5, the upper limit value of the output torque of the motor 129 is limited by the control unit 281 to 8% by the torque ratio. The upper limit is set such that the wafer boat 11 placed on the upper surface of the sealing cover 219 or the wafer 10 placed on the wafer boat 11 is placed at the moment when the sealing ring 221 is pulled from the lower end surface of the processing tube 203. The surface of the sealing cover 219 is viewed from a reference position and does not float. Further, the torque ratio upper limit value can be determined depending on the rated output of the motor 129, the weight of the boat 11, the seal ring 221, the arm portion 128, and the like. To open the seal ring 221 which is closely connected to the lower end surface of the processing tube 203, when the torque is output from the motor 129, the output is continuously outputted at a torque ratio of about 2 seconds, and then the lower end of the processing tube 203 can be pulled. The seal ring 221 is opened. At the moment of the pulling, even if the acceleration in the descending direction is applied to the seal cap 219, the wafer ratio 11 placed on the upper surface of the seal cap 219 or placed on the wafer boat 11 is set to a torque ratio of the upper limit value. The wafer 10 is viewed from a position based on the surface of the sealing cover 219 and does not become in a floating state. Then, after the seal ring 221 which is in close contact with the lower end surface of the processing tube 203 is pulled open, the torque of the motor 129 is outputted with a torque ratio of 8% or less, and is placed thereon with the seal cap 219. The boat 11 is lowered and carried out from the processing chamber 202 of the processing tube 203. As shown in the relationship between the torque ratio and the elapsed time, it is understood that the sealing cover 219 is lowered at a torque ratio of about 6% to 7%. At this time, as shown in the graph of the relationship between the position and the elapsed time and the relationship between the moving speed and the elapsed time, it can be seen that the speed decreases at a substantially constant speed. In this way, if the output torque from the motor 129 is a torque ratio of 6% to 7%, the seal cap 219 on which the wafer boat 11 storing the wafer 10 is placed can be lowered at a high speed. Therefore, by setting the torque ratio of the output torque of the motor 129 to 8% or less, it is possible to suppress the vibration when the seal ring 221 is pulled apart, and to perform the high-speed operation of the wafer boat 11 to be carried out.

(實施例2)(Example 2)

其次,針對將馬達129之轉矩值的上限限制於5%的情形,參照第6圖加以說明。如第6圖所示,若將馬達129之輸出轉矩的上限值設定成較低,例如以轉矩比設定於5%,則從處理管203之下端面拉開密封環221為止,不僅耗費2秒至3秒而且亦耗費拉開密封環221後之動作時間。在此情況下,至結束從處理管203之處理室202內搬出晶舟11為止,耗費了298秒。又,在馬達129之輸出轉矩為5%左右屬較小的情況下,從處理管203之下端面拉開密封環221後,與密封蓋219一起使晶舟11下降時之移動速度並不一定,而可觀察到伴隨著微小之變動而反覆稍大之變動的現象。如此,在晶舟11之下降中若有速度變動之起伏,則有時會產生收納在晶舟11之晶圓10從其載置位置偏移等的問題。再者,最壞的情況下,亦考量可能有拉開密封環221之力較弱,而無法從處理管203之下端面拉開密封環221的情形。因此,過度縮小馬達129之轉矩比亦不佳。例如,以轉矩比則必需大於5%。然而,由於若縮小轉矩值之上限,則可更減少拉開時之密封蓋的變形,因此可容易地想像到振動抑制效果會較高。Next, a case where the upper limit of the torque value of the motor 129 is limited to 5% will be described with reference to FIG. As shown in Fig. 6, when the upper limit value of the output torque of the motor 129 is set to be low, for example, the torque ratio is set to 5%, the sealing ring 221 is pulled away from the lower end surface of the processing tube 203, not only It takes 2 seconds to 3 seconds and also takes the action time after the sealing ring 221 is opened. In this case, it took 298 seconds until the wafer boat 11 was carried out from the processing chamber 202 of the processing tube 203. Further, when the output torque of the motor 129 is about 5%, if the seal ring 221 is pulled from the lower end surface of the processing tube 203, the moving speed when the boat 11 is lowered together with the sealing cover 219 is not Certainly, it is possible to observe a phenomenon in which a slight change is repeated with a slight change. As described above, if there is fluctuation in the speed fluctuation during the lowering of the wafer boat 11, there is a problem in that the wafer 10 accommodated in the wafer boat 11 is displaced from the placement position. Further, in the worst case, it is also considered that the force of pulling the seal ring 221 may be weak, and the seal ring 221 may not be pulled from the lower end surface of the process tube 203. Therefore, the torque ratio of the motor 129 is excessively reduced. For example, the torque ratio must be greater than 5%. However, if the upper limit of the torque value is reduced, the deformation of the seal cap at the time of pulling can be further reduced, so that it is easy to imagine that the vibration suppressing effect is high.

(實施例3)(Example 3)

其次,針對拉開大致無貼附之狀態之密封環221的情形,參照第7圖加以說明。在此情況下,係將馬達129之轉矩比的上限值限制於7%,以控制密封蓋219之移動位置,進行了密封環221的拉開。如第7圖所示,對處理管203之下端面即使密封環221呈大致無貼附的狀態,拉開密封環221之瞬間,亦檢測到速度變動與轉矩比之變動。據此,即使是稱為大致無貼附之狀態,不過亦可看出多少亦有貼附。又,雖是一瞬間,不過可知以轉矩比為7%對馬達129施加有轉矩限制。此外,拉開密封環221後以轉矩比為2%~3%動作,係因拉開後之動作轉矩的指令速度較低之故。如此,由於即使在認為密封環221無貼附的情況下,有時多少亦有貼附,因此藉由預先設定對馬達129之輸出轉矩成為限制的上限值,在輸出過剩之轉矩從處理管203之下端面剝開密封環221的期間,即可抑制如將振動施加於晶舟11而會對所收納之晶圓10造成不良影響之密封蓋219的變形(例如,振動)。因此,即使是在如密封環221並未貼附在處理管203之下端面等的情況下,亦必需預先設定馬達129之輸出轉矩的上限值。Next, a case where the seal ring 221 which is substantially unattached is pulled out will be described with reference to Fig. 7. In this case, the upper limit value of the torque ratio of the motor 129 is limited to 7% to control the moving position of the seal cap 219, and the seal ring 221 is pulled apart. As shown in Fig. 7, even if the sealing ring 221 is substantially unattached to the lower end surface of the processing tube 203, the change in the speed variation and the torque ratio is detected at the moment when the sealing ring 221 is pulled apart. Accordingly, even if it is said to be substantially unattached, it can be seen that it is also attached. Further, although it was an instant, it was found that the motor 129 was torque-limited with a torque ratio of 7%. Further, when the seal ring 221 is opened, the torque ratio is 2% to 3%, and the command speed of the operating torque after the pull-open is low. In this way, even if it is considered that the seal ring 221 is not attached, the attachment may be somewhat attached. Therefore, by setting the upper limit of the output torque of the motor 129 to be limited in advance, the excess torque is outputted from the output. When the lower end surface of the processing tube 203 is peeled off from the seal ring 221, deformation (for example, vibration) of the seal cap 219 which adversely affects the accommodated wafer 10 by applying vibration to the wafer boat 11 can be suppressed. Therefore, even if the seal ring 221 is not attached to the lower end surface of the processing tube 203 or the like, it is necessary to set the upper limit value of the output torque of the motor 129 in advance.

(比較例)(Comparative example)

此處,針對習知之晶舟的搬出製程,藉由第8圖加以說明。Here, the carry-out process for the conventional wafer boat will be described with reference to FIG.

藉由晶舟升降機115,密封蓋219係透過密封環221,如第8圖所示,以例如-37%之轉矩比推壓於處理管203(實質上係歧管209)之下端面。此時,並無馬達129之轉矩限制,而可使轉矩輸出至馬達129之額定轉矩為止。因此,以欲拉開密接在處理管203之下端面的密封環221,而從馬達129輸出之轉矩係逐漸增大至拉開密封環221為止。接著,拉開密封環221之瞬間,從處理管203之下端面拉開密封環221。此時之馬達129的轉矩,以轉矩比係17%之輸出。又,從處理管203之下端面拉開密封環221之瞬間,對密封蓋219施加有下降方向之急速的加速度,載置在其上面之晶舟11、或載置在晶舟11之晶圓10,從以密封蓋219之表面為基準的位置觀看,即變成如浮起之狀態,其結果,產生了晶圓10之破損、粒子落下、以及位置偏移等的問題。然後,從位置與移動速度之關係圖,可知晶舟11係以一定之移動速度與密封蓋219一起下降。又,從位置與經過時間之關係圖,可知密封蓋219係移動往下降方向下降。此時之從馬達129所輸出之轉矩,雖有微小之變動不過轉矩比為約5%大致一定。With the boat elevator 115, the sealing cap 219 is transmitted through the seal ring 221, as shown in Fig. 8, and is pressed against the lower end surface of the process tube 203 (substantially the manifold 209) with a torque ratio of, for example, -37%. At this time, there is no torque limit of the motor 129, and the torque can be output to the rated torque of the motor 129. Therefore, in order to pull the seal ring 221 which is in close contact with the lower end surface of the process tube 203, the torque output from the motor 129 is gradually increased until the seal ring 221 is pulled apart. Next, at the moment when the seal ring 221 is opened, the seal ring 221 is pulled away from the lower end surface of the process tube 203. At this time, the torque of the motor 129 is outputted at a torque ratio of 17%. Further, at the moment when the seal ring 221 is pulled out from the lower end surface of the processing tube 203, a rapid acceleration in the descending direction is applied to the seal cap 219, and the wafer boat 11 placed thereon or the wafer placed on the wafer boat 11 is applied. 10, when viewed from the position on the surface of the sealing cover 219, it becomes a state of floating, and as a result, problems such as breakage of the wafer 10, drop of particles, and positional displacement occur. Then, from the relationship between the position and the moving speed, it is understood that the boat 11 is lowered together with the sealing cover 219 at a constant moving speed. Further, from the relationship between the position and the elapsed time, it is understood that the sealing cover 219 is moved downward in the descending direction. At this time, the torque output from the motor 129 is slightly changed, but the torque ratio is approximately 5%.

此外,作為參考例,如第9圖所示,考量在從處理管203之下端面或密封蓋219之表面拉開密封環221時,從密封蓋219之移動初期起至完全地拉開密封環221為止,使密封蓋219每次少許地移動,以每次少許地弱化密封環221之密接力。第9圖中,從40秒左右起至100秒左右之約60秒鐘,雖微幅不過密封蓋219係正在下降。藉此,抑制在拉開密封蓋219時所產生之密封蓋219的振動,使載置在晶舟11之晶圓10不振動,而可抑制粒子的產生(參照日本特開2005-56905號公報)。此時,如圖示般,階段性地提高馬達129之輸出轉矩。接著,在從馬達129輸出某一定之轉矩的時點,密封環221便被拉開。然而,從開始密封蓋219之下降動作起至從處理管203之下端面拉開密封環221為止耗費過多之時間。於是在第9圖所示之情形下,在晶舟11之搬出耗費了約254秒鐘。另一方面,在前述第5圖所示之情形下,係以159秒鐘完成了晶舟11之搬出。有關於晶舟11之搬出,比較第9圖所示之情形與第5圖所示之情形時,第9圖所示之情形係多耗費95秒。此係因在不需微小移動之密封環221未貼附之期間的動作時間,第5圖、第9圖所示之情形雖皆大致同等,不過在第9圖所示之情形下,在使密封蓋219微小移動之過程耗費時間之故。此結果,從處理室202取出晶圓10的時間即大幅地變長,導致整體之晶圓10的搬送時間變長,因而產生處理量惡化問題。又,亦可考量僅在密封環221之貼附期間使密封蓋219低速移動,不過由於難以看出密封環221之貼附期間,因此不得不取較長之推測為密封環221貼附的期間。以下,說明為了解決此種問題,以加快處理量的手段。Further, as a reference example, as shown in Fig. 9, when the seal ring 221 is pulled away from the lower end surface of the process tube 203 or the surface of the seal cap 219, the seal ring is completely pulled from the initial stage of the movement of the seal cap 219. At 221, the sealing cover 219 is slightly moved at a time to weaken the adhesion of the seal ring 221 a little at a time. In Fig. 9, from about 40 seconds to about 60 seconds, about 60 seconds, although the sealing cover 219 is slightly lowered. By this, the vibration of the sealing cover 219 which is generated when the sealing cover 219 is opened is suppressed, and the wafer 10 placed on the wafer boat 11 is prevented from vibrating, and generation of particles can be suppressed (refer to Japanese Laid-Open Patent Publication No. 2005-56905 ). At this time, as shown in the figure, the output torque of the motor 129 is stepwise increased. Next, when a certain torque is output from the motor 129, the seal ring 221 is pulled apart. However, it takes a long time from the start of the lowering operation of the sealing cover 219 to the pulling of the sealing ring 221 from the lower end surface of the processing tube 203. Therefore, in the case shown in Fig. 9, it takes about 254 seconds to carry out the loading of the boat 11. On the other hand, in the case shown in the fifth drawing described above, the carry-out of the wafer boat 11 was completed in 159 seconds. When the wafer boat 11 is unloaded and the situation shown in Fig. 9 is compared with the case shown in Fig. 5, the situation shown in Fig. 9 is more than 95 seconds. This is because the operation time during the period in which the seal ring 221 that does not require a small movement is not attached, and the cases shown in Figs. 5 and 9 are substantially the same, but in the case shown in Fig. 9, The process of moving the sealing cover 219 minutely is time consuming. As a result, the time taken out of the wafer 10 from the processing chamber 202 is greatly lengthened, and the entire wafer 10 is transported for a long period of time, which causes a problem of deterioration in the amount of processing. Further, it is also conceivable that the sealing cover 219 is moved at a low speed only during the attachment of the seal ring 221, but since it is difficult to see the attachment period of the seal ring 221, it is necessary to take a longer period of time in which the seal ring 221 is attached. . Hereinafter, means for accelerating the amount of processing in order to solve such a problem will be described.

本發明之實施形態的基板處理裝置,係在藉由前述第1圖~第3圖所說明之基板處理裝置101中,使控制部281以較從處理管203之下端面或作為蓋之密封蓋219之表面拉開作為密封構件之密封環221之期間,更加快拉開密封環221後之密封蓋219之移動速度的方式控制馬達129。In the substrate processing apparatus according to the embodiment of the present invention, the substrate processing apparatus 101 described in the first to third figures has the control unit 281 sealed from the lower end surface of the processing tube 203 or as a cover. While the surface of the 219 is pulled apart as the seal ring 221 of the sealing member, the motor 129 is controlled in such a manner that the moving speed of the seal cap 219 after the seal ring 221 is opened is further accelerated.

<本發明之第2實施形態><Second embodiment of the present invention>

本發明之第2實施形態之基板處理裝置,作為一例係在藉由前述第1圖~第3圖所說明之基板處理裝置101中,具有以下之構成。The substrate processing apparatus according to the second embodiment of the present invention has the following configuration as an example of the substrate processing apparatus 101 described above with reference to FIGS. 1 to 3 .

基板處理裝置101中,於馬達129係使用脈衝驅動之馬達。例如,使用伺服馬達。在使用伺服馬達的情況下,如前述第1圖所示,在密封環221因某些原因(例如,處理時之熱、副生成物之附著等)而貼附在處理管203之下端面或密封蓋219之表面時,即使驅動馬達129之脈衝持續輸入至馬達129,亦有密封蓋219停留在一定位置而不下降的狀態。此時,馬達129之轉矩係成為可設定之轉矩(轉矩比)的上限值。接著,驅動馬達129之脈衝積壓。接著,在剛要從處理管203之下端面拉開密封環221之前,相對於處理管203之下端面或密封蓋219之表面,密封環221以微小之貼附狀態貼附時,馬達129之驅動係以欲恢復(消化)所積壓之脈衝,而以急遽之高速旋轉來驅動馬達129,透過臂部128使密封蓋219下降。此時,由於在密封蓋219係施加急遽之向下的加速度,因此載置在晶舟11之作為基板的晶圓10,有時便會從基板載置位置跳起或落下。In the substrate processing apparatus 101, a motor driven by a pulse is used for the motor 129. For example, use a servo motor. In the case of using a servo motor, as shown in FIG. 1 above, the seal ring 221 is attached to the lower end surface of the process tube 203 for some reason (for example, heat during processing, adhesion of by-products, etc.) or When the surface of the cover 219 is sealed, even if the pulse of the drive motor 129 is continuously input to the motor 129, the seal cover 219 stays in a certain position without being lowered. At this time, the torque of the motor 129 is the upper limit of the settable torque (torque ratio). Next, the pulse back of the motor 129 is driven. Next, before the sealing ring 221 is just pulled from the lower end surface of the processing tube 203, the sealing ring 221 is attached with a slight attachment state with respect to the lower end surface of the processing tube 203 or the surface of the sealing cover 219, and the motor 129 The drive system drives the motor 129 in a rapid high-speed rotation to recover (digest) the accumulated pressure, and lowers the seal cover 219 through the arm portion 128. At this time, since the sealing cover 219 is applied with a rapid downward acceleration, the wafer 10 placed on the wafer boat 11 as a substrate may jump or fall from the substrate mounting position.

因此,此實施形態之基板處理裝置101的控制部281,係構成為從積壓輸入至馬達129之脈衝的狀態,藉由該積壓之脈衝來驅動馬達129,在從處理管203之下端面或密封蓋219之表面拉開密封環221時所產生之脈衝的恢復期,以使晶圓10停留在晶舟11內之載置位置的方式,控制馬達129的轉矩。具體而言,將馬達129之輸出轉矩的上限值,例如以轉矩比限制在7%以下。該上限值係在脈衝之恢復期,以使晶圓10停留在晶舟11內之載置位置的方式,從馬達129之額定轉矩值適當決定者。Therefore, the control unit 281 of the substrate processing apparatus 101 of this embodiment is configured to drive the motor 129 from the state of the pulse input to the motor 129 by the back pressure, and to seal the lower end surface of the processing tube 203 or the seal. The recovery period of the pulse generated when the surface of the cover 219 is opened by the seal ring 221 is controlled so that the wafer 10 stays at the placement position in the boat 11 to control the torque of the motor 129. Specifically, the upper limit value of the output torque of the motor 129 is limited to, for example, a torque ratio of 7% or less. The upper limit value is a period in which the pulse is recovered, so that the wafer 10 stays at the mounting position in the wafer boat 11, and the rated torque value of the motor 129 is appropriately determined.

如第10圖所示,馬達129之輸出轉矩的上限值係限制於7%。以此種狀態,驅動馬達129以使晶舟升降機115動作,透過臂部128使密封蓋219往拉開貼附在處理管203之下端面之密封環221的方向下降。此時,因上述某些原因,使密封環221呈貼附在處理管203之下端面或密封蓋219之表面的狀態。以此狀態使馬達129驅動下去時,馬達129之輸出轉矩(轉矩比),並不會超過轉矩比之上限值而成為一定,並不會施加其以上之轉矩。接著,持續密封環221貼附在處理管203之下端面的狀態。在此狀態下,驅動馬達129之脈衝即使持續輸入至馬達129,密封蓋219亦不會下降。亦即,成為馬達129無法驅動之狀態,導致驅動馬達129之脈衝積壓。As shown in Fig. 10, the upper limit of the output torque of the motor 129 is limited to 7%. In this state, the motor 129 is driven to operate the boat elevator 115, and the arm portion 128 is lowered in the direction in which the seal cap 219 is pulled and attached to the seal ring 221 of the lower end surface of the process tube 203. At this time, for some of the above reasons, the seal ring 221 is attached to the lower end surface of the treatment tube 203 or the surface of the seal cap 219. When the motor 129 is driven down in this state, the output torque (torque ratio) of the motor 129 does not exceed the torque ratio upper limit value, and the above torque is not applied. Next, the state in which the seal ring 221 is attached to the lower end surface of the process tube 203 is continued. In this state, even if the pulse of the drive motor 129 is continuously input to the motor 129, the seal cap 219 does not fall. That is, the motor 129 cannot be driven, and the pulse of the drive motor 129 is accumulated.

不久,在剛要從處理管203之下端面拉開密封環221前,對處理管203之下端面或密封蓋219之表面,在密封環221變成微小之貼附狀態時,因馬達129之驅動所形成之使密封蓋219下降的力,即勝過密封環221貼附在上述下端面之力。此時,便可從上述下端面拉開密封蓋219。接著,馬達129係以欲恢復(消化)積壓之脈衝,而突然以高速旋轉驅動,因此,透過晶舟升降機115密封蓋219似乎便要急速地下降。然而,本實施形態中,由於拉開密封環221之瞬間,馬達129之轉矩比的上限值係設定在例如7%以下,因此並不會從馬達129以超過其之轉矩比輸出轉矩。因此,收納於載置在密封蓋表面之晶舟11內的晶圓10,並不會產生跳起、損傷等之振動、或產生粒子等之振動。因此,即可從處理管203之處理室202內穩定地搬出收納有晶圓10之晶舟11。Soon, just before the sealing ring 221 is pulled from the lower end surface of the processing tube 203, the surface of the lower surface of the processing tube 203 or the surface of the sealing cover 219 is driven by the motor 129 when the sealing ring 221 becomes slightly attached. The resulting force that causes the seal cap 219 to descend is superior to the force at which the seal ring 221 is attached to the lower end face. At this time, the sealing cover 219 can be pulled away from the lower end surface. Next, the motor 129 is suddenly driven at a high speed by a pulse for recovering (digesting) the back pressure, and therefore, the sealing cover 219 through the boat elevator 115 seems to be rapidly lowered. However, in the present embodiment, since the upper limit value of the torque ratio of the motor 129 is set to, for example, 7% or less at the moment of opening the seal ring 221, the motor 129 does not output the torque ratio exceeding the torque ratio. Moment. Therefore, the wafer 10 accommodated in the wafer boat 11 placed on the surface of the sealing cover does not cause vibration such as jumping or damage, or vibration such as particles. Therefore, the wafer boat 11 in which the wafer 10 is accommodated can be stably carried out from the processing chamber 202 of the processing tube 203.

此外,在未將如上述之轉矩控制應用於馬達129的情況下,在馬達129開始急速地高速旋轉時,即使欲對密封蓋219進行位置控制亦無法控制。此情況,因馬達129之急速的驅動速度,對密封蓋219產生向下之大的加速度,而會產生收納於載置在密封蓋表面之晶舟11的晶圓10浮起等問題。Further, when the torque control as described above is not applied to the motor 129, when the motor 129 starts to rapidly rotate at a high speed, even if the sealing cover 219 is to be positionally controlled, it cannot be controlled. In this case, due to the rapid driving speed of the motor 129, a downward acceleration is generated to the seal cap 219, and the wafer 10 stored in the wafer boat 11 placed on the surface of the seal cover floats.

因此,由於藉由對馬達129之轉矩比設定上限值,即可對馬達129進行轉矩控制,因此在密封環221雖接觸於處理管203之下端面但未貼附之期間(實質上係剛要拉開密封環221前之期間),係以轉矩比之限制內的指令速度驅動馬達129,在剛拉開密封環221後亦以轉矩比之限制內的指令速度高速驅動馬達129。因此,能以將剛要拉開密封環221前之速度壓低的方式進行指令,亦可期待因此而將加速度壓低。藉此,即可抑制因拉開密封環221時之密封蓋219之變形所造成的振動。Therefore, since the torque of the motor 129 can be controlled by setting the upper limit value of the torque ratio of the motor 129, the sealing ring 221 is in contact with the lower end surface of the processing tube 203 but is not attached (essentially Before the sealing ring 221 is just opened, the motor 129 is driven at a command speed within the limit of the torque ratio, and the motor is driven at a high speed by the command speed within the torque ratio immediately after the sealing ring 221 is pulled open. 129. Therefore, the command can be commanded to lower the speed immediately before the seal ring 221 is pulled, and the acceleration can be expected to be lowered. Thereby, the vibration caused by the deformation of the sealing cover 219 when the seal ring 221 is opened can be suppressed.

又,亦可在使密封蓋219下降以打開處理管203之爐口207時,控制馬達129之轉矩,然後再加快馬達129之驅動速度,藉此加快密封蓋219之下降速度(移動速度),以搬出晶舟11。藉此,可進一步縮短晶舟11之搬出時間。亦即,可提高晶圓10之搬出的處理量。Further, when the sealing cover 219 is lowered to open the mouth 207 of the processing tube 203, the torque of the motor 129 is controlled, and then the driving speed of the motor 129 is increased, thereby speeding up the falling speed (moving speed) of the sealing cover 219. To move out of the boat 11. Thereby, the carry-out time of the wafer boat 11 can be further shortened. That is, the throughput of the wafer 10 can be increased.

<本發明之第3實施形態><Third embodiment of the present invention>

接著,針對本發明之第3實施形態的基板處理裝置加以說明。本說明中,對與藉由前述第1圖~第3圖所說明之基板處理裝置101同樣的構成構件,係賦予同一符號來加以說明。Next, a substrate processing apparatus according to a third embodiment of the present invention will be described. In the description, the same components as those of the substrate processing apparatus 101 described above with reference to FIGS. 1 to 3 are denoted by the same reference numerals.

前述之第2實施形態中,作為防止以欲恢復(消化)積壓之脈衝,導致馬達129(伺服馬達)以急遽之高速旋轉進行驅動的方法,係舉使用脈衝不會積壓之速度控制的方法。具體而言,係將設想為密封環221貼附之期間定為速度控制,處理管203之爐口207打開後即切換至位置控制,使密封蓋219下降。從速度控制切換至位置控制,係在設想為密封環221貼附之位置(例如從密封狀態之位置起下降10mm之位置)進行。位置之辨識係藉由以控制部281監測馬達129之未圖示的編碼器進行。接著,在辨識到預先設定之設想為密封環221貼附之位置時,便從速度控制切換至位置控制。In the second embodiment described above, as a method of preventing the motor 129 (servo motor) from being driven to rotate at a high speed by a rapid pulse to recover (digest) the accumulated pressure, a method of controlling the speed by which the pulse is not accumulated is used. Specifically, it is assumed that the period during which the seal ring 221 is attached is set as the speed control, and after the furnace opening 207 of the process tube 203 is opened, the position control is switched to lower the seal cap 219. Switching from the speed control to the position control is performed at a position where the seal ring 221 is attached (for example, a position that is lowered by 10 mm from the position of the sealed state). The identification of the position is performed by an encoder (not shown) that monitors the motor 129 by the control unit 281. Next, when it is recognized that the predetermined position is attached to the seal ring 221, the speed control is switched to the position control.

速度控制係藉由未圖示之高階控制裝置進行。高階控制裝置係構成為指示屬伺服馬達之馬達129的轉速(或者旋轉角度),對藉由設在馬達129之未圖示的編碼器所取得之編碼值加以判斷,再對作為伺服馬達控制裝置之控制部281,發出馬達129之驅動或停止的指令。因此,取得編碼值後至從高階控制裝置發出指令為止會耗費通信時間,而無法在所需之位置使密封蓋219停止。然而,速度控制中,由於係藉由指示馬達129之轉速(旋轉角度)來控制馬達129,因此在指令並無需使用脈衝。因此,即使在以控制部281指定之轉矩比的上限值,密封蓋219停留在一定位置而不降下的狀態,脈衝亦不會積壓。因此,在從處理管203之下端面拉開密封環221後,馬達129亦不會急遽地高速旋轉,而會以指示之速度進行動作。The speed control is performed by a high-order control device not shown. The high-order control device is configured to indicate the rotation speed (or rotation angle) of the motor 129 belonging to the servo motor, and to determine the code value obtained by an encoder (not shown) provided in the motor 129, and to operate as a servo motor control device. The control unit 281 issues a command to drive or stop the motor 129. Therefore, it takes a communication time to obtain an instruction from the high-order control device after obtaining the code value, and the sealing cover 219 cannot be stopped at the required position. However, in the speed control, since the motor 129 is controlled by instructing the rotation speed (rotation angle) of the motor 129, it is not necessary to use a pulse in the command. Therefore, even in the upper limit value of the torque ratio specified by the control unit 281, the seal cover 219 stays at a certain position without being lowered, and the pulse is not accumulated. Therefore, after the seal ring 221 is pulled away from the lower end surface of the processing tube 203, the motor 129 does not jerk rapidly rotate at a high speed, but operates at the indicated speed.

因此,具有脈衝列不會積壓之特性的速度控制,如上述般係僅在設想為密封環221貼附之期間實施。該期間,高階控制裝置係隨時監測編碼值。接著,在以編碼值確認已動作至設想為密封環221貼附之位置之後,一度將使馬達129之驅動停止的指令發出至控制部281。然後,將速度控制切換至可進行正確之定位的位置控制。Therefore, the speed control having the characteristic that the pulse train does not accumulate is performed only during the period in which it is assumed that the seal ring 221 is attached. During this period, the high-order control device monitors the encoded value at any time. Next, after confirming that the coded value has been moved to the position where the seal ring 221 is supposed to be attached, the command to stop the driving of the motor 129 is once issued to the control unit 281. Then, switch the speed control to position control for correct positioning.

位置控制中,高階控制裝置係使用脈衝列對控制部281發出指示密封蓋219之最終目標位置的指令。接著,從編碼值讀取拉開密封蓋219後之位置,計算所讀取之編碼值與最終目標位置的差距,並以該差距為位置指令值對控制部281進行指示。該指示係一直進行至差距變成0為止。控制部281中,係使馬達129動作,以使密封蓋219移動至位置指令值所指示之位置。以此方式,藉由進行位置控制,即可使密封蓋219停止在正確之位置。In the position control, the high-order control device issues a command indicating the final target position of the seal cover 219 to the control unit 281 using the pulse train. Next, the position after the seal cover 219 is pulled out is read from the code value, the difference between the read code value and the final target position is calculated, and the control unit 281 is instructed by the difference as the position command value. This indication is continued until the gap becomes zero. In the control unit 281, the motor 129 is operated to move the seal cover 219 to the position indicated by the position command value. In this way, by performing position control, the sealing cover 219 can be stopped at the correct position.

與從上述之速度控制切換至位置控制同時地,切換馬達129之設定轉矩比的上限值,藉此與前述之第2實施形態同樣,可加快馬達129之驅動速度,而可加快密封蓋219之下降速度以搬出晶舟11。此外,亦可同樣地使用未將脈衝使用於指令之轉矩控制,以取代上述之速度抑制。由於在轉矩控制的情況係直接指示驅動之轉矩值,因此拉開時係使用所指示之轉矩值。By switching the above-described speed control to the position control and switching the upper limit value of the set torque ratio of the motor 129, the driving speed of the motor 129 can be increased as in the second embodiment described above, and the sealing cover can be accelerated. The speed of 219 is lowered to move out of the boat 11. Further, instead of the above-described speed suppression, the torque control in which the pulse is not used for the command can be similarly used. Since the torque value of the drive is directly indicated in the case of torque control, the indicated torque value is used when pulled apart.

<本發明之第4實施形態><Fourth embodiment of the present invention>

接著,針對本發明之第4實施形態的基板處理裝置,參照第11圖加以說明。第11圖中,對與藉由前述第1圖~第3圖所說明之基板處理裝置101同樣的構成構件,係賦予同一符號來加以說明。Next, a substrate processing apparatus according to a fourth embodiment of the present invention will be described with reference to FIG. In the eleventh embodiment, the same components as those of the substrate processing apparatus 101 described above with reference to Figs. 1 to 3 are denoted by the same reference numerals.

如第11圖所示,例如在控制部281內具有警報器284,該警報器284係測量從處理管203之下端面或密封蓋219之表面拉開密封環221的動作時間,在未於既定動作時間內結束拉開動作的情況下,則將該意旨之訊息M傳送至連接於控制部281的顯示部283。警報器284亦可設在控制部281外。總之,警報器284係構成為在以控制部281控制馬達129之轉矩時,測量馬達129之驅動時間,根據該測量結果,在超過預設之馬達129之驅動限制時間的情況下,藉由警報器284將拉開動作未於既定動作時間內結束之意旨的訊息M傳送至顯示部283。將警報器284之訊息M通知操作者(operator)之手段,並不限定於顯示部283之顯示,亦可為如警告聲之聲響。又,亦可構成為在藉由警報器284發出拉開動作未於既定動作時間內結束之意旨的訊息M的情況下,能從控制部281對馬達129發出指示,而可自動地停止馬達129之驅動。As shown in Fig. 11, for example, the control unit 281 has an alarm 284 for measuring the operation time of pulling the seal ring 221 from the lower end surface of the processing tube 203 or the surface of the sealing cover 219, which is not predetermined. When the pull-out operation is completed within the operation time, the message M is transmitted to the display unit 283 connected to the control unit 281. The alarm 284 may also be provided outside the control unit 281. In short, the alarm 284 is configured to measure the driving time of the motor 129 when the torque of the motor 129 is controlled by the control unit 281, and based on the measurement result, when the driving limit time of the preset motor 129 is exceeded, The alarm 284 transmits a message M indicating that the pulling operation has not ended within the predetermined operation time to the display unit 283. The means for notifying the operator M of the message M of the alarm 284 is not limited to the display of the display unit 283, and may be a sound such as a warning sound. Further, in a case where the alarm device 284 issues the message M that the pulling operation is not completed within the predetermined operation time, the control unit 281 can issue an instruction to the motor 129 to automatically stop the motor 129. Drive.

設置警報器284,就即使驅動馬達129亦無法於既定時間內從處理管203之下端面或密封蓋219之表面拉開密封環221的情況而言,係對以下之情形有效。例如因密封環221之劣化導致對處理管203之下端面或密封蓋219之表面的接著力變強而難以拉開之情形,在該狀態下持續驅動馬達129時,有時會造成馬達129燒毀等故障。可事先防止此種馬達129之故障的發生。When the alarm 284 is provided, even if the drive motor 129 cannot pull the seal ring 221 from the lower end surface of the process tube 203 or the surface of the seal cap 219 within a predetermined time, it is effective for the following cases. For example, due to the deterioration of the seal ring 221, the adhesion force to the lower end surface of the process tube 203 or the surface of the seal cap 219 becomes strong and it is difficult to pull open. When the motor 129 is continuously driven in this state, the motor 129 sometimes burns. Waiting for a fault. The occurrence of such a malfunction of the motor 129 can be prevented in advance.

<本發明之第5實施形態><Fifth Embodiment of the Present Invention>

本發明之第5實施形態的基板處理裝置,係在藉由前述第1圖~第3圖所說明之基板處理裝置101中,如第12圖所示,構成為在密封蓋219與臂部128之間,具有作為彈性體之彈簧311。以下,針對其詳細參照第12圖加以說明。In the substrate processing apparatus 101 of the fifth embodiment of the present invention, as shown in FIG. 12, the substrate processing apparatus 101 described in the first to third embodiments is configured such that the sealing cover 219 and the arm portion 128 are formed. There is a spring 311 as an elastic body. Hereinafter, the details will be described with reference to Fig. 12 for details.

如第12圖所示,本實施形態之基板處理裝置101,係具備有與參照前述第1圖所說明之基板處理裝置101同樣的處理爐201。在處理爐201,係設有形成處理室202之包含後述之製程管的處理管203,並以包圍處理管203之方式具備有作為加熱機構的加熱器。又,沿著處理爐201之側部設置有作為升降機構的晶舟升降機115。晶舟升降機115係構成為作為支撐部之臂部128可藉由驅動機構126而進行升降。在臂部128上,係透過過衰減之作為彈性體的彈簧311,支撐有作為蓋之密封蓋219,以開閉設在處理管203下端之爐口207。又,在密封蓋219上,係設有作為密封構件之密封環221,以將密封蓋219與處理管203之下端面之間予以密封。密封環221例如係以O型環構成。再者,密封蓋219之上面係構成為可載置晶舟11,該晶舟11係將作為基板之晶圓10在保持成水平之狀態下以多段載置。As shown in Fig. 12, the substrate processing apparatus 101 of the present embodiment includes a processing furnace 201 similar to the substrate processing apparatus 101 described with reference to Fig. 1 described above. In the processing furnace 201, a processing tube 203 that forms a processing tube 202, which will be described later, is formed, and a heater as a heating means is provided so as to surround the processing tube 203. Further, a boat elevator 115 as an elevating mechanism is provided along the side of the processing furnace 201. The boat elevator 115 is configured such that the arm portion 128 as a support portion can be raised and lowered by the drive mechanism 126. On the arm portion 128, a spring 311 as an elastic body that has been attenuated is supported, and a sealing cover 219 as a cover is supported to open and close the furnace opening 207 provided at the lower end of the processing tube 203. Further, a seal ring 221 as a sealing member is provided on the seal cap 219 to seal the seal cap 219 from the lower end surface of the process tube 203. The seal ring 221 is formed, for example, by an O-ring. Further, the upper surface of the sealing cover 219 is configured to mount the wafer boat 11, and the wafer boat 11 is placed in a plurality of stages while the wafer 10 as a substrate is horizontally held.

彈簧311例如可使用設定成過衰減之條件的空氣彈簧、液體彈簧、板彈簧、以及線圈彈簧等彈簧。作為空氣彈簧可舉空氣阻尼器,作為液體彈簧則可舉油壓阻尼器。As the spring 311, for example, an air spring, a liquid spring, a leaf spring, and a coil spring such as a coil spring can be used. An air damper can be cited as the air spring, and a hydraulic damper can be cited as the liquid spring.

驅動機構126係與前述者同樣地構成為滾珠螺桿構造。又,在滾珠螺桿軸127之上端部(或下端部),係設有可驅動滾珠螺桿軸127使其旋轉之馬達129。藉此,驅動馬達129使滾珠螺桿軸127旋轉,藉此使臂部128升降。藉由這些,使密封蓋219與載置在其上面之晶舟11上升或下降,以對處理室202內搬入或搬出晶舟11。又,構成為:一旦將晶舟11搬入至處理室202內,則藉由晶舟升降機115支撐於臂部128之密封蓋219即透過密封環221,推壓於處理管203之下端面方向,以將處理室202內保持成氣密。The drive mechanism 126 is configured as a ball screw structure in the same manner as the above. Further, a motor 129 that can drive the ball screw shaft 127 to rotate is provided at an upper end portion (or a lower end portion) of the ball screw shaft 127. Thereby, the drive motor 129 rotates the ball screw shaft 127, thereby raising and lowering the arm portion 128. By this, the sealing cover 219 and the wafer boat 11 placed thereon are raised or lowered to carry in or out of the wafer boat 11 into the processing chamber 202. Further, when the boat 11 is carried into the processing chamber 202, the sealing cover 219 supported by the boat lifter 115 via the boat elevator 115 passes through the seal ring 221 and is pressed against the lower end surface of the processing tube 203. The inside of the processing chamber 202 is kept airtight.

又,在馬達129之驅動軸,係設有測量該未圖示之驅動軸之轉矩的轉矩感測器271。再者,於馬達129係設有將該馬達129之轉矩控制在既定值的控制部281。控制部281係藉由轉矩感測器271,在從處理管203之下端面或密封蓋219之表面拉開密封環221時所產生之密封蓋219之變形(例如因振動所產生之變形)的恢復期,以使晶圓10停留在晶舟11內之載置位置的方式,控制馬達129的轉矩。例如,控制成使馬達129之轉矩在一定之範圍內。針對轉矩控制之詳細例則如前述般。Further, a torque sensor 271 that measures the torque of the drive shaft (not shown) is provided on the drive shaft of the motor 129. Further, the motor 129 is provided with a control unit 281 that controls the torque of the motor 129 to a predetermined value. The control unit 281 is a deformation of the sealing cover 219 (for example, deformation due to vibration) generated when the seal ring 221 is pulled from the lower end surface of the processing tube 203 or the surface of the sealing cover 219 by the torque sensor 271. The recovery period is such that the torque of the motor 129 is controlled in such a manner that the wafer 10 stays at the placement position in the wafer boat 11. For example, it is controlled such that the torque of the motor 129 is within a certain range. The detailed example of the torque control is as described above.

此外,由於基板處理裝置101之整體構成及處理爐之細節係與前述者相同,因此請參照前述。Further, since the overall configuration of the substrate processing apparatus 101 and the details of the processing furnace are the same as those described above, please refer to the above.

設有彈簧311之基板處理裝置101中,係藉由在密封蓋219與臂部128之間,設置具有成為過衰減之彈簧特性的彈簧311,而可抑制晶舟11與密封蓋219一起之急遽下降。In the substrate processing apparatus 101 provided with the spring 311, by providing a spring 311 having a spring characteristic which is excessively attenuated between the sealing cover 219 and the arm portion 128, it is possible to suppress the impatient of the boat 11 and the sealing cover 219 together. decline.

例如,若以與密封蓋219一起算包含載置在其表面上之晶圓10之晶舟11及密封環221的質量為M時,施加於彈簧311之力F則能以F=Mg表示。此處,g係重力加速度。又,若以由彈簧311所產生之位移為x,以彈簧311之彈簧常數為K時,則由彈簧311所產生之力Fs便能以Fs=Kx表示。此處,在對密封蓋219賦予某種振動時,欲使M不產生衰減振動而成為過衰減,則必需使Kx<Mg。以此方式,以彈簧311之運動為過衰減,而作成即使荷重施加於彈簧311亦不振動。因此,由於彈簧311係過衰減,所以從處理管203之下端面拉開密封環221時,密封蓋219並不振動而安靜地對臂部128之表面呈靜止之狀態。For example, when the mass of the wafer boat 11 and the seal ring 221 including the wafer 10 placed on the surface of the sealing cover 219 is M, the force F applied to the spring 311 can be expressed by F=Mg. Here, g is the gravitational acceleration. Further, when the displacement generated by the spring 311 is x and the spring constant of the spring 311 is K, the force Fs generated by the spring 311 can be expressed by Fs = Kx. Here, when a certain vibration is applied to the seal cap 219, it is necessary to make Kx <Mg without causing the attenuation vibration to be excessively attenuated by M. In this way, the movement of the spring 311 is over-attenuated, so that even if the load is applied to the spring 311, it does not vibrate. Therefore, since the spring 311 is attenuated, when the seal ring 221 is pulled away from the lower end surface of the process tube 203, the seal cap 219 does not vibrate and quietly faces the surface of the arm portion 128.

此處,針對驅動馬達129藉由晶舟升降機115使臂部128逐漸下降之情形加以說明。若密封環221密接在處理管203下端面而在貼附之狀態使臂部128逐漸下降時,彈簧311便被拉伸。以此時之彈簧311的伸長量為x,在伸長x處從處理管203下端面拉開了密封環221。如此一來,此時由彈簧311所產生之力Fs成為Kx,因與密封蓋219一起算包含載置在其表面上之晶圓10之晶舟11及密封環221,施加於彈簧311之力F成為F=Mg。此處,由於以使彈簧311之運動成為過衰減的方式設定成Kx<Mg,因此與密封蓋219一起算包含載置在其表面上之晶圓10之晶舟11及密封環221的振動成為過衰減,對臂部128之表面安靜地呈靜止之狀態。Here, a description will be given of a case where the driving motor 129 gradually lowers the arm portion 128 by the boat elevator 115. When the seal ring 221 is in close contact with the lower end surface of the process tube 203 and the arm portion 128 is gradually lowered in the attached state, the spring 311 is stretched. At this time, the amount of elongation of the spring 311 is x, and the seal ring 221 is pulled away from the lower end surface of the processing tube 203 at the elongation x. As a result, the force Fs generated by the spring 311 becomes Kx at this time, and the wafer boat 11 and the seal ring 221 including the wafer 10 placed on the surface thereof are counted together with the sealing cover 219, and the force applied to the spring 311 is applied. F becomes F=Mg. Here, since Kx<Mg is set so that the movement of the spring 311 becomes excessively attenuated, the vibration of the wafer boat 11 and the seal ring 221 including the wafer 10 placed on the surface of the sealing cover 219 is calculated. Over-attenuation, the surface of the arm portion 128 is quietly in a stationary state.

又,若以使Fs產生時之馬達129的轉矩為T,以滾珠螺桿之導程(lead)為I時,若從馬達129觀看時,力Fs成為Fs=2πT/I。此處,由於Fs=Kx,因此2πT/I=Kx,再者由於Kx<Mg,因此成為2πT/I<Mg。若進一步加以變形,則成為T<MgI/2π。此處,若以欲使臂部128下降時所需之馬達129的轉矩為轉矩T’時,從處理管203之下端面拉開密封環221時所需之馬達129的總轉矩Tall成為Tall=T+T’。因此,馬達129最好以Tall=T+T’以下之轉矩使用。Further, when the torque of the motor 129 when Fs is generated is T and the lead of the ball screw is I, when viewed from the motor 129, the force Fs becomes Fs = 2πT/I. Here, since Fs=Kx, 2πT/I=Kx, and since Kx<Mg, it becomes 2πT/I<Mg. If it is further deformed, it becomes T<MgI/2π. Here, if the torque of the motor 129 required to lower the arm portion 128 is the torque T', the total torque Tall of the motor 129 required to pull the seal ring 221 from the lower end surface of the process tube 203 Become Tall=T+T'. Therefore, the motor 129 is preferably used with a torque of Tall = T + T' or less.

<本發明之第6實施形態><Embodiment 6 of the present invention>

本發明之第6實施形態的基板處理裝置,係構成為使晶舟11之搬送動作,亦即使馬達129之驅動控制對應密封蓋219之高度位置而變化。以下,針對其細節參照第13圖加以說明。第13圖(a)係表示藉由本實施形態之基板處理裝置所實施之搬送動作的示意圖,(b)係藉由控制部所進行之搬送控制的流程圖。In the substrate processing apparatus according to the sixth embodiment of the present invention, the wafer boat 11 is transported, and the drive control of the motor 129 changes depending on the height position of the seal cap 219. Hereinafter, the details will be described with reference to Fig. 13. Fig. 13(a) is a schematic view showing a transport operation performed by the substrate processing apparatus of the embodiment, and Fig. 13(b) is a flow chart showing the transport control by the control unit.

本實施形態之搬出製程(S4)一開始,控制部281便首先測量密封蓋219現在的高度位置(S4a)。密封蓋219之高度位置的測量,係使用例如設於滾珠螺桿軸127或臂部128之未圖示的光學感測器、或設於馬達129的編碼器等進行。接著,比較所測得之密封蓋219的高度位置與既定之「動作切換位置」(S4b)。「動作切換位置」係指要進行後述搬送動作之切換的高度位置。搬出製程(S4)剛開始後,由於密封蓋219之高度位置係「密封位置」且較「動作切換位置」更上方,因此進至第13圖(a)之「Yes」,控制部281則對馬達129傳送既定之設定資訊(動作指示資訊),以使密封蓋219之下降開始(S4c)。此時,由既定之設定資訊所定義之馬達129的最大轉矩,係設為與上述之實施形態同樣的轉矩。亦即在從處理管203之下端面或密封蓋219之表面拉開密封環221時所產生之密封蓋219之變形(例如振動)的恢復期,以使晶圓10停留在晶舟11內之載置位置的轉矩,例如設為額定轉矩的10%以下,較佳為1%左右之轉矩。藉此,密封蓋219之下降開始時,可防止從晶圓載置位置(基板載置位置)觀看之晶圓10的浮起等,且能以穩定地載置晶圓10之狀態,從處理管203內搬出晶舟11。以下,亦將根據相關的設定資訊之搬出動作稱為「初期搬送動作」。At the beginning of the carry-out process (S4) of the present embodiment, the control unit 281 first measures the current height position of the seal cover 219 (S4a). The measurement of the height position of the seal cap 219 is performed using, for example, an optical sensor (not shown) provided on the ball screw shaft 127 or the arm portion 128, or an encoder provided in the motor 129. Next, the measured height position of the seal cap 219 and the predetermined "action switching position" are compared (S4b). The "operation switching position" refers to a height position at which switching of a conveying operation to be described later is to be performed. Immediately after the start of the unloading process (S4), since the height position of the seal cap 219 is "seal position" and is higher than the "action switching position", the control unit 281 is in the "Yes" of Fig. 13 (a). The motor 129 transmits the predetermined setting information (action instruction information) to start the lowering of the sealing cover 219 (S4c). At this time, the maximum torque of the motor 129 defined by the predetermined setting information is set to the same torque as that of the above-described embodiment. That is, the recovery period of the deformation (e.g., vibration) of the sealing cover 219 generated when the sealing ring 221 is pulled away from the lower end surface of the processing tube 203 or the surface of the sealing cover 219, so that the wafer 10 stays in the wafer boat 11. The torque at the placement position is, for example, 10% or less of the rated torque, preferably about 1%. Thereby, when the lowering of the sealing cover 219 is started, the floating of the wafer 10 viewed from the wafer mounting position (substrate mounting position) can be prevented, and the wafer 10 can be stably placed, and the processing tube can be stably placed. The boat 11 is carried out in 203. Hereinafter, the operation of moving out the related setting information is also referred to as "initial transfer operation".

接著,控制部281係對馬達129傳送設定資訊,並且將對馬達129所傳送之設定資訊可讀取地儲存在例如控制部281所具備之非揮發性記憶體等(S4d)。藉此,即使是在萬一供給於基板處理裝置之電源因意外被阻斷等而再起動控制部281的情況下,控制部281亦可迅速地讀取剛要再起動前之設定資訊而再傳送至馬達129,而可迅速地再開始上述之「初期搬送動作」。Next, the control unit 281 transmits the setting information to the motor 129, and readablely stores the setting information transmitted to the motor 129 in, for example, a non-volatile memory included in the control unit 281 (S4d). By this means, even if the control unit 281 is restarted in the event that the power supplied to the substrate processing apparatus is accidentally blocked or the like, the control unit 281 can quickly read the setting information just before the restart, and then The transmission to the motor 129 can quickly resume the "initial transfer operation" described above.

一旦使馬達129之動作開始,控制部281便以既定之時間間隔(例如200msec間隔)反覆測量密封蓋219之高度位置。接著,在密封蓋219存在於較「動作切換位置」更上方的情況下,不變更對馬達129之最大轉矩的設定(一直限制於上述之值),使馬達129持續上述之「初期搬送動作」。When the operation of the motor 129 is started, the control unit 281 repeatedly measures the height position of the seal cap 219 at predetermined time intervals (for example, at intervals of 200 msec). Next, when the seal cap 219 is present above the "operation switching position", the setting of the maximum torque of the motor 129 is not changed (the value is always limited to the above value), and the motor 129 continues the "initial transfer operation" described above. "."

在剛開始往使密封蓋219下降之方向驅動馬達129後,如上述般,密封環221係持續著貼附在處理管203之下端面等的狀態。接著,直至達到所設定之轉矩的上限值為止,藉由晶舟升降機115持續往下降方向拉引密封蓋219,同時地亦持續往下降方向拉引密封環221。接著,在往下方拉引密封環221之力勝過密封環221對處理管203之下端面的密接力時,使從處理管203之下端面拉開密封環221。然後,使得密封蓋219實際上開始下降。After the motor 129 is driven in the direction in which the sealing cover 219 is lowered, as described above, the seal ring 221 is continuously attached to the lower end surface of the processing tube 203 or the like. Then, until the upper limit of the set torque is reached, the boat lifter 115 continues to pull the seal cap 219 in the downward direction, and at the same time, the seal ring 221 is continuously pulled in the descending direction. Next, when the force of pulling the seal ring 221 downward is better than the adhesion of the seal ring 221 to the lower end surface of the process tube 203, the seal ring 221 is pulled away from the lower end surface of the process tube 203. Then, the sealing cover 219 is actually caused to start to descend.

然後,密封蓋219一下降至上述之「動作切換位置」,即進至第13圖(b)之「No」,控制部281則對馬達129傳送新的設定資訊,以使密封蓋219之下降速度增加(或者維持)至既定速度(較初期搬送動作中之下降速度更大之速度)(S4e)。此外,此時之馬達129的最大轉矩,亦可大於初期搬送動作時之最大轉矩,例如亦可設為額定轉矩之20%左右。以此方式,密封蓋219一下降至「動作切換位置」,藉由控制馬達129之動作,以提高(或者維持)密封蓋219之下降速度,即可使搬出製程(S4)所需時間減少,以提升基板處理之生產性。以下,亦將根據相關設定之搬出動作稱為「後期搬送動作」。此外,在從「初期搬送動作」切換至「後期搬送動作」時,亦可使密封蓋219之下降速度緩慢地變化,以降低因這些速度差所造成之對晶圓10的衝擊。Then, the sealing cover 219 is lowered to the above-mentioned "action switching position", that is, to "No" of Fig. 13 (b), and the control portion 281 transmits new setting information to the motor 129 to lower the sealing cover 219. The speed is increased (or maintained) to a predetermined speed (a speed greater than the rate of decline in the initial transport operation) (S4e). Further, the maximum torque of the motor 129 at this time may be larger than the maximum torque at the time of the initial conveyance operation, and may be, for example, about 20% of the rated torque. In this manner, the sealing cover 219 is lowered to the "action switching position", and by controlling the operation of the motor 129 to increase (or maintain) the lowering speed of the sealing cover 219, the time required for the carry-out process (S4) can be reduced. To improve the productivity of substrate processing. Hereinafter, the carry-out operation according to the relevant setting is also referred to as "post-transfer operation". Further, when switching from the "initial transfer operation" to the "post transfer operation", the falling speed of the sealing cover 219 can be gradually changed to reduce the impact on the wafer 10 caused by these speed differences.

接著,控制部281係對馬達129傳送新的設定資訊,並且將對馬達129所傳送之設定資訊可讀取地儲存在例如控制部281所具備之非揮發性記憶體等(S4f)。藉此,即使是在萬一供給於基板處理裝置之電源因意外被阻斷等而再起動控制部281的情況下,控制部281亦可迅速地讀取剛要再起動前之設定資訊而再傳送至馬達129,而可迅速地再開始上述之「後期搬送動作」。Next, the control unit 281 transmits new setting information to the motor 129, and readablely stores the setting information transmitted to the motor 129 in, for example, a non-volatile memory included in the control unit 281 (S4f). By this means, even if the control unit 281 is restarted in the event that the power supplied to the substrate processing apparatus is accidentally blocked or the like, the control unit 281 can quickly read the setting information just before the restart, and then The transmission to the motor 129 can quickly resume the above-mentioned "post-transfer operation".

然後,控制部281係以重新設定之轉矩容許範圍內的最大限速度使馬達129動作,使密封蓋219迅速地下降至第13圖(a)所示之「搬出結束位置」,而完成搬出製程(S4)。此外,控制部281亦可在密封蓋219一接近「搬出結束位置」,即變更對馬達129之設定資訊,以使密封蓋219之下降速度減速至既定速度。藉此,可降低密封蓋219到達「搬出結束位置」時(停止密封蓋219之下降時)施加在晶圓10的衝擊。Then, the control unit 281 operates the motor 129 at the maximum speed within the re-set torque allowable range, and quickly lowers the seal cover 219 to the "lifting end position" shown in Fig. 13(a), and completes the carry-out. Process (S4). Further, the control unit 281 may change the setting information to the motor 129 as soon as the sealing cover 219 approaches the "loading end position", so that the lowering speed of the sealing cover 219 is decelerated to a predetermined speed. Thereby, it is possible to reduce the impact applied to the wafer 10 when the sealing cover 219 reaches the "loading end position" (when the falling of the sealing cover 219 is stopped).

此外,上述實施形態中,雖不停止密封蓋219之下降,亦即不停止馬達129,而連續進行「初期搬送動作」與「後期搬送動作」之切換,不過本發明並不限定於此形態。亦即,亦可暫時停止馬達129,再進行上述之切換。此情況下,亦可使在「動作切換位置」周邊之密封蓋219的下降速度減速至既定速度。藉此,可分別降低密封蓋219到達「動作切換位置」時(停止密封蓋219之下降時)、或密封蓋219離開「動作切換位置」時(再開始密封蓋219之下降時)施加在晶圓10的衝擊。Further, in the above-described embodiment, the switching between the "initial transfer operation" and the "late transfer operation" is continuously performed without stopping the lowering of the seal cover 219, that is, the motor 129 is not stopped. However, the present invention is not limited to this embodiment. That is, the motor 129 can be temporarily stopped, and the above switching can be performed. In this case, the lowering speed of the seal cap 219 around the "action switching position" can be reduced to a predetermined speed. Thereby, it is possible to reduce the application of the crystal to the crystal when the sealing cover 219 reaches the "operation switching position" (when the sealing cover 219 is lowered) or when the sealing cover 219 leaves the "operation switching position" (when the sealing cover 219 is lowered again). The impact of the round 10.

又,上述實施形態中,雖針對在晶舟11之搬出時進行「初期搬送動作」與「後期搬送動作」之切換的情形加以說明,不過本發明並不限定於此形態,而亦可在晶舟11之搬入時進行。此情形下,亦可將從「搬出結束位置」至「動作切換位置」之搬入動作、以及從「動作切換位置」至「密封位置」之搬入動作,分別設成與上述之「後期搬送動作」及「初期搬送動作」相同(不過搬送方向分別定為上升方向)。此外,「後期搬送動作」中之馬達129的最大轉矩,只要設為例如額定轉矩之60%左右即可。Further, in the above-described embodiment, the case where the "initial transfer operation" and the "late transfer operation" are switched at the time of carrying out the wafer boat 11 will be described. However, the present invention is not limited to this embodiment, and may be in the form of crystal. When the boat 11 is moved in. In this case, the loading operation from the "removal end position" to the "action switching position" and the loading operation from the "operation switching position" to the "sealing position" may be set to the "post-transfer operation" described above. It is the same as the "initial transfer operation" (although the transfer direction is set to the rising direction). In addition, the maximum torque of the motor 129 in the "post-transport operation" may be, for example, about 60% of the rated torque.

又,上述實施形態中,雖針對進行「初期搬送動作」與「後期搬送動作」之2階段切換的情形加以說明,不過本發明並不限定於相關形態,而亦可依序進行3階段以上之動作的切換。Further, in the above-described embodiment, the case of performing the two-stage switching between the "initial transfer operation" and the "late transfer operation" has been described. However, the present invention is not limited to the related art, and may be performed in three stages or more. Switching of actions.

<本發明之較佳形態><Preferred form of the present invention>

以下,針對本發明之較佳形態加以附記。Hereinafter, a preferred embodiment of the present invention will be attached.

本發明之第1形態,係一種基板處理裝置,具有:晶舟,係載置基板;處理管,係收納該晶舟;蓋,係載置該晶舟且開閉設在該處理管之下端的爐口;升降機構,係使該蓋升降;馬達,係驅動該升降機構;密封構件,係密封該處理管之下端面與該蓋之間;以及控制部,係在從該處理管之下端面或該蓋之表面拉開該密封構件時所產生之該蓋之變形的恢復期,以使該基板停留在該晶舟內之載置位置的方式,控制該馬達之轉矩。According to a first aspect of the invention, a substrate processing apparatus includes: a wafer boat on which a substrate is placed; a processing tube that accommodates the wafer boat; and a lid that mounts the wafer boat and is opened and closed at a lower end of the processing tube. a furnace opening; a lifting mechanism for lifting the cover; a motor driving the lifting mechanism; a sealing member sealing the lower end surface of the processing tube and the cover; and a control portion being disposed from the lower end surface of the processing tube Or the recovery period of the deformation of the cover generated when the surface of the cover is pulled apart to control the torque of the motor in such a manner that the substrate stays at the mounting position in the boat.

本發明之第2形態,係如第1形態之基板處理裝置,其中該控制部係以較從該處理管之下端面或該蓋之表面拉開該密封構件之期間更加快拉開該密封構件後之該蓋之移動速度的方式控制該馬達。According to a second aspect of the present invention, in the substrate processing apparatus of the first aspect, the control unit opens the sealing member more quickly than when the sealing member is pulled from a lower end surface of the processing tube or a surface of the cover. The motor is controlled in such a manner that the speed of the cover moves.

本發明之第3形態,係如第1或第2形態之基板處理裝置,其中該控制部係僅在從該處理管之下端面或該蓋之表面拉開該密封構件時控制該馬達之轉矩;控制該馬達之轉矩之期間以外之該馬達的驅動期間,係控制該蓋之移動速度。A third aspect of the invention is the substrate processing apparatus according to the first or second aspect, wherein the control unit controls the rotation of the motor only when the sealing member is pulled from a lower end surface of the processing tube or a surface of the cover. Moment; the driving speed of the motor is controlled during the driving period of the motor other than the period during which the torque of the motor is controlled.

本發明之第4形態,係如第1至第3形態中任一形態之基板處理裝置,其中該控制部係控制成:使剛要開始從該處理管之下端面或該蓋之表面拉開該密封構件之動作前之推壓該密封構件之該馬達的轉矩,小於該密封構件推壓於該處理管之下端面及該蓋之表面時之該馬達的轉矩。The substrate processing apparatus according to any one of the first aspect to the third aspect, wherein the control unit is controlled such that the control unit is just started to be opened from the lower end surface of the processing tube or the surface of the cover. The torque of the motor that presses the sealing member before the operation of the sealing member is less than the torque of the motor when the sealing member is pressed against the lower end surface of the processing tube and the surface of the cover.

本發明之第5形態,係如第1至第4形態中任一形態之基板處理裝置,其中該控制部係在從該處理管之下端面或該蓋之表面拉開該密封構件時,使該馬達之轉矩依時序變動。The substrate processing apparatus according to any one of the first aspect to the fourth aspect, wherein the control unit is configured to pull the sealing member from a lower end surface of the processing tube or a surface of the cover The torque of the motor varies according to the timing.

本發明之第6形態,係如第1至第5形態中任一形態之基板處理裝置,其具有警報器,以測量從該處理管之下端面或該蓋之表面拉開該密封構件的動作時間,並將該拉開動作在既定動作時間內尚未完成之意旨的訊息傳送至連接於該控制部的顯示部。A substrate processing apparatus according to any one of the first to fifth aspects of the present invention, comprising an alarm device for measuring an action of pulling the sealing member from a lower end surface of the processing tube or a surface of the cover The time, and the message that the pull-opening operation has not been completed within the predetermined operating time is transmitted to the display unit connected to the control unit.

本發明之第7形態,係如第1至第6形態中任一形態之基板處理裝置,其中該馬達係脈衝驅動之馬達;該控制部係從輸入至該馬達之脈衝積壓的狀態,藉由該積壓之脈衝驅動該馬達,以在從該處理管之下端面或該蓋之表面拉開該密封構件時所產生之該蓋之變形的恢復期,以使該基板停留在該晶舟內之載置位置的方式,控制該馬達之轉矩。A substrate processing apparatus according to any one of the first aspect to the sixth aspect, wherein the motor is a pulse-driven motor; and the control unit is in a state of being back-charged from the pulse input to the motor. The backlog pulse drives the motor to recover the deformation of the cover when the sealing member is pulled from the lower end surface of the processing tube or the surface of the cover, so that the substrate stays in the boat The way the position is placed controls the torque of the motor.

本發明之第8形態,係如第1至第7形態中任一形態之基板處理裝置,其中在該蓋、與支撐該蓋且該升降機構所具備之可升降的支撐部之間,具有過衰減之彈性體。The substrate processing apparatus according to any one of the first aspect to the seventh aspect, wherein the cover and the support portion that supports the cover and the elevating mechanism is movable up and down Attenuated elastomer.

本發明之第9形態,係如第1至第8形態中任一形態之基板處理裝置,其中該控制部係在從該處理管之下端面或該蓋之表面拉開該密封構件時所產生之該蓋之變形的恢復期,以使該晶舟之加速度成為重力加速度以下的方式,控制該馬達之轉矩。The substrate processing apparatus according to any one of the first aspect to the eighth aspect, wherein the control unit is produced when the sealing member is pulled from a lower end surface of the processing tube or a surface of the cover The recovery period of the deformation of the cover is controlled such that the acceleration of the boat is equal to or less than the acceleration of gravity.

本發明之第10形態,係如第1至第9形態中任一形態之基板處理裝置,其中該升降機構係具有支柱、以及支撐該蓋且驅動該馬達而藉此沿著該支柱升降的支撐部;該控制部係在從該處理管之下端面或該蓋之表面拉開該密封構件時所產生之該支撐部之變形的恢復期,以使該基板停留在該晶舟內之載置位置的方式,控制該馬達的轉矩。A substrate processing apparatus according to any one of the first to ninth aspects, wherein the elevating mechanism has a support, and a support that supports the cover and drives the motor to move up and down along the support The control portion is a recovery period of the deformation of the support portion generated when the sealing member is pulled from the lower end surface of the processing tube or the surface of the cover, so that the substrate stays in the wafer boat The way of position controls the torque of the motor.

本發明之第11形態,係一種半導體裝置之製造方法,係在處理管內對載置在晶舟之基板進行處理之後,使透過密封構件密封該處理管之爐口的蓋下降以打開該爐口,並且從該爐口搬出該處理管內之該晶舟,在從該處理管之下端面或該蓋之表面拉開該密封構件時所產生之該蓋之變形的恢復期,以使該基板停留在該晶舟內之載置位置的方式,控制用以驅動使該蓋下降之升降機構之馬達的轉矩。According to an eleventh aspect of the present invention, in a method of manufacturing a semiconductor device, after a substrate placed on a wafer boat is processed in a processing tube, a cover that seals a nozzle of the processing tube through a sealing member is lowered to open the furnace. And recovering from the mouth of the wafer in the processing tube from the furnace mouth, a recovery period of deformation of the cover generated when the sealing member is pulled from the lower end surface of the processing tube or the surface of the cover, so that The manner in which the substrate stays at the mounting position in the wafer boat controls the torque of the motor for driving the lifting mechanism that lowers the cover.

10...晶圓(基板)10. . . Wafer (substrate)

11...晶舟11. . . Crystal boat

101...基板處理裝置101. . . Substrate processing device

115...晶舟升降機(升降機構)115. . . Crystal boat lift (lifting mechanism)

201...處理爐201. . . Treatment furnace

202...處理室202. . . Processing room

203...處理管203. . . Processing tube

219...密封蓋(蓋)219. . . Sealing cover (cover)

221...密封環(密封構件)221. . . Sealing ring (sealing member)

281...控制部281. . . Control department

第1圖係表示本發明之第1實施形態之基板處理裝置之要部的概略構成圖。Fig. 1 is a schematic block diagram showing a main part of a substrate processing apparatus according to a first embodiment of the present invention.

第2圖係表示本發明之第1實施形態之基板處理裝置之概略的斜立體圖。Fig. 2 is a perspective perspective view showing the outline of a substrate processing apparatus according to a first embodiment of the present invention.

第3圖係表示本發明之第1實施形態之基板處理裝置之處理爐之一例的縱截面圖。Fig. 3 is a vertical cross-sectional view showing an example of a processing furnace of the substrate processing apparatus according to the first embodiment of the present invention.

第4圖係表示本發明之第1實施形態之半導體裝置之製造方法之一製程的流程圖。Fig. 4 is a flow chart showing a process of a method of manufacturing a semiconductor device according to the first embodiment of the present invention.

第5圖係在限制馬達之轉矩比的上限時之密封蓋之位置與經過時間的關係圖、密封蓋之移動速度與經過時間的關係圖、以及馬達之轉矩比與經過時間的關係圖。Fig. 5 is a graph showing the relationship between the position of the seal cap and the elapsed time when the upper limit of the torque ratio of the motor is limited, the relationship between the moving speed of the seal cap and the elapsed time, and the relationship between the torque ratio of the motor and the elapsed time. .

第6圖係在限制馬達之轉矩比的上限時之密封蓋之位置與經過時間的關係圖、密封蓋之移動速度與經過時間的關係圖、以及馬達之轉矩比與經過時間的關係圖。Fig. 6 is a graph showing the relationship between the position of the seal cap and the elapsed time when the upper limit of the torque ratio of the motor is limited, the relationship between the moving speed of the seal cap and the elapsed time, and the relationship between the torque ratio of the motor and the elapsed time. .

第7圖係在限制馬達之轉矩比的上限時之密封蓋之位置與經過時間的關係圖、密封蓋之移動速度與經過時間的關係圖、以及馬達之轉矩比與經過時間的關係圖。Figure 7 is a graph showing the relationship between the position of the seal cap and the elapsed time when the upper limit of the torque ratio of the motor is limited, the relationship between the moving speed of the seal cap and the elapsed time, and the relationship between the torque ratio of the motor and the elapsed time. .

第8圖係在未限制馬達之轉矩比的上限時之密封蓋之位置與經過時間的關係圖、密封蓋之移動速度與經過時間的關係圖、以及馬達之轉矩比與經過時間的關係圖。Figure 8 is a graph showing the relationship between the position of the sealing cap and the elapsed time when the upper limit of the torque ratio of the motor is not limited, the relationship between the moving speed of the sealing cap and the elapsed time, and the relationship between the torque ratio of the motor and the elapsed time. Figure.

第9圖係在使密封蓋微幅移動時之密封蓋之位置與經過時間的關係圖、密封蓋之移動速度與經過時間的關係圖、以及馬達之轉矩比與經過時間的關係圖。Fig. 9 is a graph showing the relationship between the position of the sealing cover and the elapsed time when the sealing cover is slightly moved, the relationship between the moving speed of the sealing cover and the elapsed time, and the relationship between the torque ratio of the motor and the elapsed time.

第10圖係在限制馬達之轉矩比的上限時之密封蓋之位置與經過時間的關係圖、密封蓋之移動速度與經過時間的關係圖、以及馬達之轉矩比與經過時間的關係圖。Figure 10 is a graph showing the relationship between the position of the seal cap and the elapsed time when the upper limit of the torque ratio of the motor is limited, the relationship between the moving speed of the seal cap and the elapsed time, and the relationship between the torque ratio of the motor and the elapsed time. .

第11圖係表示本發明之第3實施形態之基板處理裝置之要部的概略構成圖。Fig. 11 is a schematic block diagram showing a main part of a substrate processing apparatus according to a third embodiment of the present invention.

第12圖係表示本發明之第5實施形態之基板處理裝置之要部的概略構成圖。Fig. 12 is a schematic block diagram showing a main part of a substrate processing apparatus according to a fifth embodiment of the present invention.

第13圖(a)係表示藉由本發明之第6實施形態之基板處理裝置所實施之搬送動作的示意圖,(b)係藉由控制部所進行之搬送控制的流程圖。Fig. 13 (a) is a schematic view showing a transport operation performed by the substrate processing apparatus according to the sixth embodiment of the present invention, and (b) is a flow chart of the transport control by the control unit.

10...晶圓(基板)10. . . Wafer (substrate)

11...晶舟11. . . Crystal boat

101...基板處理裝置101. . . Substrate processing device

115...晶舟升降機(升降機構)115. . . Crystal boat lift (lifting mechanism)

126...驅動機構126. . . Drive mechanism

127...滾珠螺桿軸127. . . Ball screw shaft

128...臂部128. . . Arm

129...馬達129. . . motor

201...處理爐201. . . Treatment furnace

202...處理室202. . . Processing room

203...處理管203. . . Processing tube

207...爐口207. . . Mouth

219...密封蓋(蓋)219. . . Sealing cover (cover)

221...密封環(密封構件)221. . . Sealing ring (sealing member)

271...轉矩感測器271. . . Torque sensor

281...控制部281. . . Control department

Claims (4)

一種基板處理裝置,其具有:晶舟,係載置基板;處理管,係收納該晶舟;蓋,係載置該晶舟且開閉設在該處理管之下端的爐口;升降機構,係使該蓋升降;馬達,係驅動該升降機構;密封構件,係密封該處理管之下端面與該蓋之間;以及控制部,係在從該處理管之下端面或該蓋之表面拉開該密封構件時所產生之該蓋之變形的恢復期,以使該基板停留在該晶舟內之載置位置的方式,控制該馬達,該控制部係在該蓋從該爐口移動到既定位置為止的期間,一面限制該馬達的轉矩一面進行該馬達的速度控制。 A substrate processing apparatus comprising: a wafer boat for mounting a substrate; a processing tube for accommodating the wafer boat; and a lid for mounting the wafer boat to open and close a furnace mouth provided at a lower end of the processing tube; Lifting the cover; driving the lifting mechanism; sealing member sealing between the lower end surface of the processing tube and the cover; and the control portion being pulled away from the lower end surface of the processing tube or the surface of the cover The recovery period of the deformation of the cover generated by the sealing member controls the motor so that the substrate stays at the mounting position in the wafer boat, and the control portion moves from the furnace opening to the predetermined position During the period from the position, the speed control of the motor is performed while limiting the torque of the motor. 如申請專利範圍第1項之基板處理裝置,其中該控制部係在該蓋從該爐口移動到該既定位置之後,一面限制該馬達的轉矩一面將該馬達的控制從該速度控制切換成位置控制。 The substrate processing apparatus according to claim 1, wherein the control unit switches the control of the motor from the speed control to the torque of the motor after the cover is moved from the furnace mouth to the predetermined position. Position control. 一種半導體裝置之製造方法,係具有以下的製程:在處理管之中,對載置於晶舟之基板進行處理的製程;在處理該基板之後,使透過密封構件密封該處理管 之爐口的蓋下降以打開該爐口的製程;及在打開該蓋的同時,從該爐口搬出該處理管內之該晶舟的製程,於在打開該蓋的同時,從該爐口搬出該處理管內之該晶舟的製程中,在從該處理管之下端面或該蓋之表面拉開該密封構件時所產生之該蓋之變形的恢復期,以使該基板停留在該晶舟內之載置位置的方式,在該蓋從該爐口移動到既定位置為止的期間,一面控制用以驅動使該蓋下降之升降機構之馬達的轉矩一面進行該馬達的速度控制。 A manufacturing method of a semiconductor device, which has a process of processing a substrate placed on a wafer boat in a processing tube, and sealing the processing tube through a sealing member after processing the substrate The lid of the furnace mouth is lowered to open the furnace mouth; and the process of moving the wafer boat in the processing tube is carried out from the furnace mouth while the lid is opened, from the furnace mouth while the lid is opened a recovery period of the deformation of the cover generated when the sealing member is pulled from the lower end surface of the processing tube or the surface of the cover in the process of moving out the wafer boat in the processing tube, so that the substrate stays in the The speed of the motor is controlled while controlling the torque of the motor for driving the lifting mechanism for lowering the cover while the cover is moved from the furnace mouth to the predetermined position in the manner in which the position is placed in the wafer boat. 如申請專利範圍第1項之基板處理裝置,其中該控制部係在將該馬達的控制從該速度控制切換成該位置控制時,切換該馬達的轉矩的限制值。The substrate processing apparatus according to claim 1, wherein the control unit switches the limit value of the torque of the motor when the control of the motor is switched from the speed control to the position control.
TW100100797A 2010-01-12 2011-01-10 Substrate processing apparatus and method of manufacturing semiconductor device TWI447839B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010003644A JP2011146412A (en) 2010-01-12 2010-01-12 Substrate processing apparatus
JP2010003884 2010-01-12
JP2010227766A JP5711930B2 (en) 2010-01-12 2010-10-07 Substrate processing apparatus and semiconductor device manufacturing method

Publications (2)

Publication Number Publication Date
TW201140736A TW201140736A (en) 2011-11-16
TWI447839B true TWI447839B (en) 2014-08-01

Family

ID=44921205

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100100797A TWI447839B (en) 2010-01-12 2011-01-10 Substrate processing apparatus and method of manufacturing semiconductor device

Country Status (2)

Country Link
KR (1) KR101219587B1 (en)
TW (1) TWI447839B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5562383A (en) * 1993-04-13 1996-10-08 Tokyo Electron Kabushiki Kaisha Treatment apparatus
US6995533B2 (en) * 2003-04-25 2006-02-07 The Chamberlain Group, Inc. Controlled torque drive for a barrier operator

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3174397B2 (en) * 1992-05-14 2001-06-11 株式会社日立国際電気 Semiconductor manufacturing method and semiconductor manufacturing apparatus
JP2005056905A (en) * 2003-08-05 2005-03-03 Hitachi Kokusai Electric Inc Substrate processing system
JP4999615B2 (en) * 2007-08-31 2012-08-15 東京エレクトロン株式会社 Inspection apparatus and inspection method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5562383A (en) * 1993-04-13 1996-10-08 Tokyo Electron Kabushiki Kaisha Treatment apparatus
US6995533B2 (en) * 2003-04-25 2006-02-07 The Chamberlain Group, Inc. Controlled torque drive for a barrier operator

Also Published As

Publication number Publication date
TW201140736A (en) 2011-11-16
KR101219587B1 (en) 2013-01-22
KR20110083486A (en) 2011-07-20

Similar Documents

Publication Publication Date Title
JP5635270B2 (en) Substrate processing apparatus, substrate processing system, display method of substrate processing apparatus, parameter setting method of substrate processing apparatus, and recording medium
JP4359640B2 (en) Substrate transfer apparatus and downflow control method
KR100859602B1 (en) Substrate processing equipment and semiconductor device manufacturing method
TW200832592A (en) Substrate processing apparatus and manufacturing method for a semiconductor device
TW201041069A (en) Substrate processing apparatus
JP2003017543A (en) Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and conveying apparatus
TWI498991B (en) Substrate processing apparatus and manufacture method of semiconductor
JP6290421B2 (en) Substrate processing apparatus, substrate transport method, semiconductor device manufacturing method, and program
JP4628502B1 (en) Method and apparatus for manufacturing a laminate module such as a solar cell module
JP5711930B2 (en) Substrate processing apparatus and semiconductor device manufacturing method
JP2004014543A (en) Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
TWI447839B (en) Substrate processing apparatus and method of manufacturing semiconductor device
US10837112B2 (en) Substrate processing apparatus
JP2011181817A (en) Substrate processing apparatus
US8876453B2 (en) Substrate processing apparatus and method of manufacturing semiconductor device
JP2011146412A (en) Substrate processing apparatus
KR102448794B1 (en) Method of manufacturing semiconductor device, program and substrate processing apparatus
JP2008258240A (en) Substrate treatment apparatus
JP2014067795A (en) Substrate processing apparatus and semiconductor device manufacturing method
CN112750720A (en) Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
WO2004057656A1 (en) Substrate processing device and semiconductor device producing method
JP2007234937A (en) Manufacturing method of semiconductor device, and substrate-treating device
JP2005142478A (en) Equipment for processing substrate